JP2018178002A - Dicing/die-bonding film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing/die-bonding film appropriate for realizing an excellent adhesive force to a frame member such as a ring frame while securing cutting properties in an expanding process, at an adhesive layer.SOLUTION: A dicing/die-bonding film X includes a dicing tape 10 and an adhesive layer 20. The dicing tape 10 has a laminate structure including a base material 11 and an adhesive layer 12. The adhesive layer 20 is removably adhered on the adhesive layer 12. In the adhesive layer 20, a tensile storage elastic modulus at -15°C measured with regard to a sample piece of width 4 mm under a condition of an initial distance between chucks 10 mm, a frequency 10 Hz, a dynamic strain ±0.5 μm, and a rate of temperature rise 5°C/min is 1000 to 4000 MPa. A tensile storage elastic modulus measured under the above condition at 23°C is 10 to 240 MPa.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing die bond film which can be used in the manufacturing process of a semiconductor device.

  In the process of manufacturing a semiconductor device, a dicing die bond film may be used to obtain a semiconductor chip with an adhesive film of a chip equivalent size for die bonding, that is, a semiconductor chip with an adhesive layer for die bonding. . The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, and for example, a dicing tape comprising a substrate and an adhesive layer, and a die-bonding film peelably adhered to the adhesive layer side Agent layer).

  As one of methods for obtaining a semiconductor chip with an adhesive layer using a dicing die bond film, a method is known which involves a process for expanding a dicing tape in the dicing die bond film and cleaving the die bond film. In this method, first, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. The semiconductor wafer is, for example, processed so that it can be cut later together with a die bonding film and separated into a plurality of semiconductor chips. Next, an expanding device is used to cleave the die bond film such that a plurality of adhesive film pieces, each in intimate contact with the semiconductor chip, result from the die bond film on the dicing tape, and the dicing tape of the dicing die bond film expands. Be done. In this expanding step, cutting also occurs in the semiconductor wafer on the die bonding film at a location corresponding to the cutting location in the die bonding film, and the semiconductor wafer is separated into a plurality of semiconductor chips on the dicing die bonding film or dicing tape. Next, the expanding step is performed again to increase the separation distance for the plurality of adhesive layer-provided semiconductor chips after cutting on the dicing tape. Next, for example, after passing through a cleaning process, each semiconductor chip is pushed up by the pin member of the pickup mechanism from the lower side of the dicing tape together with the die bond film of the chip equivalent size closely adhered to it, and then picked up from above the dicing tape Ru. In this way, a semiconductor chip with a die bond film or adhesive layer is obtained. The semiconductor chip with an adhesive layer is fixed by die bonding to an adherend such as a mounting substrate via the adhesive layer. For example, about the technique regarding the dicing die-bonding film used as mentioned above, it describes in the following patent documents 1-3, for example.

JP 2007-2173 A JP, 2010-177401, A JP, 2012-23161, A

  FIG. 14 shows a conventional dicing die bond film Y in a schematic cross-sectional view. The dicing die bond film Y is composed of a dicing tape 60 and a die bond film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 that exerts an adhesive force. The die-bonding film 70 is in close contact with the pressure-sensitive adhesive layer 62 by the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die bond film Y has a disk shape of a size corresponding to a semiconductor wafer to be processed or a workpiece in the process of manufacturing a semiconductor device, and can be used in the above-mentioned expanding step. For example, as shown in FIG. 15, in the state where the semiconductor wafer 81 is bonded to the die bond film 70 and the ring frame 82 is bonded to the pressure-sensitive adhesive layer 62, the above-mentioned expanding step is performed. The semiconductor wafer 81 is, for example, processed so as to be singulated into a plurality of semiconductor chips.

  The ring frame 82 is a frame member with which a transport mechanism such as a transport arm provided in the expand device mechanically abuts at the time of workpiece transport in a state of being attached to the dicing die bond film Y. The conventional dicing die bonding film Y is designed such that such a ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die bond film Y has a design in which a ring frame attachment area is secured around the die bond film 70 in the adhesive layer 62 of the dicing tape 60. In such a design, the distance in the film in-plane direction between the outer peripheral end 62 e of the pressure-sensitive adhesive layer 62 and the outer peripheral end 70 e of the die bond film 70 is about 10 to 30 mm.

  The present invention has been conceived under the circumstances as described above, and the purpose thereof is to provide a good adhesive layer for a frame member such as a ring frame while securing the cutting property in the expanding step. It is an object of the present invention to provide a dicing die bond film suitable for achieving adhesion.

  The dicing die bond film provided by the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive layer peelably adheres to the pressure-sensitive adhesive layer in the dicing tape. The adhesive layer was prepared under the conditions of initial chuck distance 10 mm, frequency 10 Hz, dynamic strain ± 0.5 μm, and heating rate 5 ° C./min (tensile storage elastic modulus measurement condition) for a 4 mm wide adhesive layer sample. The tensile storage modulus (first tensile storage modulus) at -15 ° C to be measured is 1000 to 4000 MPa, preferably 1200 to 3900 MPa, more preferably 1500 to 3800 MPa. Together with this, the adhesive layer has a tensile storage elastic modulus (second tensile storage elastic modulus) at 10 ° C. of 10 to 240 MPa measured at 23 ° C. under the above-mentioned tensile storage elastic modulus measurement conditions for an adhesive layer sample piece having a width of 4 mm. Preferably it is 20-200 MPa, More preferably, it is 40-150 MPa. The dicing die-bonding film of such a configuration can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device.

  In the process of manufacturing a semiconductor device, as described above, there may be a case where an expanding step performed using a dicing die bond film, ie, an expanding step for cutting, is performed to obtain a semiconductor chip with an adhesive layer. At this point, in this expanding step, it is necessary that the die bonding film as the adhesive layer can be cut by the expanding of the dicing tape while the work such as the semiconductor wafer and the frame member such as the ring frame are both held by the dicing die bonding film. It is. As described above, the adhesive layer of the present dicing die bond film has a first tensile storage elastic modulus at -15 ° C of 1000 to 4000 MPa, preferably 1200 to 3900 MPa, and more preferably 1500 to 3800 MPa. Such a configuration is suitable for cleaving the adhesive layer in an expanding step carried out at a temperature lower than room temperature, such as -15 ° C, and in the vicinity thereof, and a ring frame or the like in the adhesive layer. It is suitable for achieving good adhesion to the frame member. At the same time, as described above, the adhesive layer of the present dicing die bond film has a second tensile storage modulus at 23 ° C. of 10 to 240 MPa, preferably 20 to 200 MPa, and more preferably 40 to 150 MPa. Such a configuration is suitable for achieving good adhesion to a frame member such as a ring frame in an adhesive layer at normal temperature, for example, before and after the expanding step. Thus, the present dicing die-bonding film is suitable for achieving good adhesion to the frame member while securing the cleavability in the expanding step in the adhesive layer.

  Such a present dicing die bond film has a dicing tape or its pressure-sensitive adhesive layer and an adhesive layer thereon in the film in-plane direction such that the adhesive layer includes the frame affixing area in addition to the work affixing area. It is possible to design with substantially the same dimensions. For example, in the in-plane direction of the dicing die bond film, it is possible to adopt a design in which the outer peripheral edge of the adhesive layer is within a distance of 1000 μm from the outer peripheral edge of the base of the dicing tape or the adhesive layer. Such a present dicing die bond film has a process of forming a dicing tape having a laminated structure of a base material and an adhesive layer, and a process of forming an adhesive layer, a punching process. It is suitable to carry out collectively by processing such as processing.

  In the manufacturing process of the conventional dicing die bond film Y described above, a processing step (first processing step) for forming the dicing tape 60 of a predetermined size and shape, and a die bond film 70 of a predetermined size and shape A processing step (second processing step) for forming is required as a separate step. In the first processing step, for example, a predetermined separator, a base material layer to be formed into the base material 61, and an adhesion formed to be formed into the pressure-sensitive adhesive layer 62 between them. The laminated sheet body having a laminated structure with the agent layer is subjected to a process in which the processing blade is pushed from the side of the base layer to the separator. Thereby, the dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base 61 is formed on the separator. In the second processing step, for example, for a laminated sheet body having a laminated structure of a predetermined separator and an adhesive layer to be formed into a die bond film 70, from the adhesive layer side to the separator Processing is performed to make the processing blade plunge. Thereby, the die-bonding film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 thus formed in separate steps are then laminated while being aligned. FIG. 16 shows a conventional dicing die bond film Y with a separator 83 covering the die bond film 70 surface and the adhesive layer 62 surface.

  On the other hand, when the dicing tape or the pressure-sensitive adhesive layer thereof and the adhesive layer thereon have substantially the same design dimensions in the film in-plane direction, the dicing die-bonding film of the present invention comprises the substrate and the pressure-sensitive adhesive layer. It is suitable to carry out collectively the processing for forming a dicing tape having a laminated structure of and the processing for forming an adhesive layer in a processing such as punching processing. . Such a present dicing die bond film is suitable for achieving good adhesion to the frame member while securing cutting ability in the expanding step in the adhesive layer, and also reduces the number of manufacturing steps and suppresses manufacturing costs. Suitable for efficient manufacturing in terms of

  The adhesive layer of the present dicing die bond film is preferably 1 N / 10 mm or more, more preferably 1.5 N with respect to the SUS plane in a peeling test under the conditions of -15 ° C, peeling angle 180 ° and tensile speed 300 mm / min. It exhibits a 180 ° peel adhesion of at least 10 mm, more preferably at least 2 N / 10 mm. In addition, this adhesive layer exhibits a 180 ° peel adhesive strength of, for example, 100 N / 10 mm or less, more preferably 50 N / 10 mm or less, to a SUS plane in a peel test under the same conditions. The said structure regarding adhesive force is suitable in order to ensure holding | maintenance of the flame | frame member by this dicing die-bonding film in the temperature of -15 degreeC and its vicinity which are lower than room temperature.

  The adhesive layer of the present dicing die bond film is 0.3 N / 10 mm or more, more preferably 0.4 N / s with respect to a SUS plane in a peeling test under conditions of 23 ° C., peeling angle 180 ° and tensile speed 300 mm / min. It exhibits a 180 ° peel adhesion of 10 mm or more, more preferably 0.5 N / 10 mm or more. In addition, this adhesive layer exhibits a 180 ° peel adhesive strength of, for example, 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, with respect to the SUS plane in a peel test under the same conditions. The said structure regarding adhesive force is suitable in order to ensure holding | maintenance of the flame | frame member by this dicing die-bonding film in 23 degreeC and its vicinity temperature.

  The base of the present dicing die bond film preferably comprises an ethylene-vinyl acetate copolymer. Such a configuration ensures good heat shrinkability in the substrate 11 and maintains the chip separation distance realized in the separation / expanding process using partial heat shrinkage of the dicing tape or the substrate. And is preferred.

  The adhesive layer of the present dicing die bond film preferably comprises a polymer having a glass transition temperature of -10 to 10 ° C. Such a configuration is suitable for securing the adhesion of the adhesive layer to an object to be processed such as a wafer. Moreover, such a configuration is also suitable for achieving both the sticking property of the adhesive layer to the ring frame at the room temperature and the temperature in the vicinity thereof and the prevention of the residue upon peeling.

  The adhesive layer of the present dicing die bond film preferably contains a filler in a proportion of 30% by mass or less, more preferably 25% by mass or less. Such a configuration is suitable, for example, for securing the adhesion of the adhesive layer to the ring frame in the expanding step performed at a low temperature.

  The adhesive layer of the present dicing die bond film preferably contains a high molecular weight component in a proportion of 50 to 100% by mass, more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10000 or more. Such a configuration is suitable for achieving both the sticking property of the adhesive layer to the ring frame at the room temperature and the temperature in the vicinity thereof and the prevention of the residue upon peeling.

  The adhesive layer of the present dicing die-bonding film preferably contains a liquid resin in a proportion of 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is suitable for achieving both the sticking property of the adhesive layer to the ring frame at the room temperature and the temperature in the vicinity thereof and the prevention of the residue upon peeling.

It is a cross-sectional schematic diagram of the dicing die-bonding film which concerns on one Embodiment of this invention. It represents an example of the case where the dicing die bond film shown in FIG. 1 is accompanied by a separator. 7 illustrates an example of a method of manufacturing a dicing die bond film shown in FIG. 7 illustrates a part of steps in a semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 10 represents a step following the step shown in FIG. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. It is a cross-sectional schematic diagram of the conventional dicing die-bonding film. Fig. 15 illustrates a usage of the dicing die bond film shown in Fig. 14. 17 illustrates one supply form of a dicing die bond film shown in FIG.

  FIG. 1 is a schematic cross-sectional view of a dicing die bond film X according to one embodiment of the present invention. The dicing die bond film X has a laminated structure including the dicing tape 10 and the adhesive layer 20. The dicing tape 10 has a laminated structure including the substrate 11 and the adhesive layer 12. The adhesive layer 12 has an adhesive surface 12 a on the adhesive layer 20 side. The adhesive layer 20 includes a work affixing area and a frame affixing area, and adheres releasably to the pressure-sensitive adhesive layer 12 of the dicing tape 10 or the pressure-sensitive adhesive surface 12 a thereof. The dicing die bond film X can be used, for example, in an expanding step as described later in the process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device. The dicing die bond film X has a disk shape of a size corresponding to a semiconductor wafer to be processed in the process of manufacturing a semiconductor device, and the diameter thereof is, for example, within the range of 345 to 380 mm It is in the range of 245 to 280 mm (8 inch wafer compatible type), in the range of 195 to 230 mm (6 inch wafer compatible type), or in the range of 495 to 530 mm (18 inch wafer compatible type).

  The base material 11 of the dicing tape 10 is an element functioning as a support in the dicing tape 10 to the dicing die bond film X. For example, a plastic substrate (particularly, a plastic film) can be suitably used as the substrate 11. Examples of the constituent material of the plastic base include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, Aramid, fluororesin, cellulose resin, and silicone resin are mentioned. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, Ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer Coalescence is mentioned. Polyesters include, for example, polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may be made of one type of material, or may be made of two or more types of materials. The substrate 11 may have a single layer structure or a multilayer structure. From the viewpoint of securing good heat shrinkability in the base material 11 and maintaining the chip separation distance realized in the expansion step for separation described later using partial heat shrinkage of the dicing tape 10 to the base material 11 The base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio in the constituent components. When the substrate 11 is a plastic film, it may be a non-oriented film, a uniaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the substrate 11 is of the ultraviolet curing type as described later, it is preferable that the substrate 11 have ultraviolet transparency.

  When the dicing tape 10 to the substrate 11 is shrunk by, for example, partial heating when using the dicing die bond film X, the substrate 11 preferably has heat shrinkability. When the substrate 11 is made of a plastic film, the substrate 11 is preferably a biaxially stretched film in order to achieve isotropic heat shrinkability of the dicing tape 10 to the substrate 11. The dicing tape 10 to the substrate 11 preferably have a thermal contraction rate of 2 to 30%, more preferably 2 to 25%, and more preferably 2 to 25% as measured by a heat treatment test performed under conditions of a heating temperature of 100 ° C. and a heating treatment time of 60 seconds. It is 3 to 20%, more preferably 5 to 20%. The said thermal contraction rate shall refer to the thermal contraction rate of at least one of the thermal contraction rate of what is called MD direction, and the thermal contraction rate of what is called TD direction.

  The surface on the side of the pressure-sensitive adhesive layer 12 in the substrate 11 may be subjected to physical treatment, chemical treatment, or undercoating treatment in order to enhance adhesion with the pressure-sensitive adhesive layer 12. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high piezoelectric bombardment treatment, and ionizing radiation treatment. Chemical treatments include, for example, chromic acid treatment. The treatment for enhancing the adhesion is preferably performed on the entire surface of the substrate 11 on the pressure-sensitive adhesive layer 12 side.

  The thickness of the substrate 11 is preferably 40 μm or more, preferably 50 μm or more, more preferably from the viewpoint of securing the strength for the substrate 11 to function as a support in the dicing tape 10 to the dicing die bond film X. It is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 to the dicing die bond film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, more preferably 150 μm or less .

  The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive capable of intentionally reducing the adhesive strength by an external action such as radiation irradiation or heating (adhesive reduction type pressure-sensitive adhesive), or an adhesive depending on the external action. It may be a pressure-sensitive adhesive (adhesive force non-reduction type pressure-sensitive adhesive) with little or no reduction in force, and depending on the method and conditions of singulation of semiconductor chips to be singulated using dicing die bond film X Can be selected appropriately.

  In the case of using an adhesive force-reducing adhesive as the adhesive in the adhesive layer 12, the adhesive layer 12 exhibits relatively high adhesive strength in the production process and use process of the dicing die-bonding film X and is relatively low. It becomes possible to use properly the state which shows adhesive force. For example, when bonding the adhesive layer 20 to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the manufacturing process of the dicing die bond film X, or when the dicing die bond film X is used for a predetermined wafer dicing process, the adhesive layer 12 is While it becomes possible to suppress or prevent floating or peeling of adherends such as the adhesive layer 20 from the adhesive layer 12 by using a state showing relatively high adhesive strength, after that, dicing die bonding In the pickup step for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the film X, the adhesive strength of the adhesive layer 12 is reduced, and then the semiconductor chip with the adhesive layer is appropriately selected from the adhesive layer 12 It becomes possible to pick up.

  Examples of such an adhesive force-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (a radiation-curable pressure-sensitive adhesive) and a heat-foaming pressure-sensitive adhesive. In the pressure-sensitive adhesive layer 12 of the present embodiment, one kind of adhesion-reduced pressure-sensitive adhesive may be used, or two or more kinds of adhesion-reduced pressure-sensitive adhesives may be used. In addition, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 has a pressure-sensitive adhesive And the other part may be formed from a non-adhesive force reducing adhesive. In addition, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of an adhesive force-reducing pressure-sensitive adhesive, or a part of the layers in the laminated structure is an adhesive force-reducing pressure-sensitive adhesive It may be formed from

  As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive of a type which is cured by irradiation of electron beam, ultraviolet light, α-ray, β-ray, γ-ray or X-ray can be used. A curing type pressure sensitive adhesive (ultraviolet curable pressure sensitive adhesive) can be particularly suitably used.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, a radiation-polymerizable monomer having a base polymer such as an acrylic pressure-sensitive adhesive, an acrylic polymer, and a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include additive-type radiation-curable pressure-sensitive adhesives containing components and oligomer components.

  The above-mentioned acrylic polymer preferably contains monomer units derived from acrylic acid ester and / or methacrylic acid ester as the largest main monomer unit in mass ratio. In the following, "(meth) acrylic" represents "acrylic" and / or "methacrylic".

  Examples of (meth) acrylic acid esters for forming monomer units of acrylic polymers include hydrocarbon groups such as (meth) acrylic acid alkyl esters, (meth) acrylic acid cycloalkyl esters, and (meth) acrylic acid aryl esters. Included (meth) acrylic acid esters. Examples of (meth) acrylic acid alkyl esters include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, iso Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, tetradecyl ester Hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of (meth) acrylic acid cycloalkyl esters include cyclopentyl and cyclohexyl esters of (meth) acrylic acid. Examples of (meth) acrylic acid aryl esters include phenyl (meth) acrylate and benzyl (meth) acrylate. As the (meth) acrylic acid ester as the main monomer for the acrylic polymer, one (meth) acrylic acid ester may be used, or two or more (meth) acrylic acid esters may be used . In order to properly express in the adhesive layer 12 basic characteristics such as adhesiveness due to (meth) acrylic acid ester, (meth) acrylic acid ester as a main monomer in all monomer components for forming an acrylic polymer The proportion of is preferably 40% by mass or more, more preferably 60% by mass or more.

  The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with (meth) acrylic acid ester in order to modify its cohesion and heat resistance. As such monomer components, for example, functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, acrylonitrile and the like Included monomers and the like. Examples of carboxy group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Anhydride monomers include, for example, maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Mention may be made of 8-hydroxyoctyl methacrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxy lauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of glycidyl group-containing monomers include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of sulfonic acid group-containing monomers include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth And acryloyloxy naphthalene sulfonic acid. Examples of phosphoric acid group-containing monomers include 2-hydroxyethyl acryloyl phosphate. As the other monomer for the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used. In order to properly express in the adhesive layer 12 basic characteristics such as adhesiveness due to (meth) acrylic acid ester, the ratio of the other monomer components in all the monomer components for forming the acrylic polymer is preferable. Is 60 mass% or less, preferably 40 mass% or less.

  The acrylic polymer contains a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester as a main monomer to form a crosslinked structure in its polymer skeleton It is also good. As such polyfunctional monomers, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (ie polyglycidyl (meth) acrylate), polyester Examples include (meth) acrylates and urethane (meth) acrylates. As a polyfunctional monomer for acrylic polymers, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is preferably, in order to appropriately express the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12 It is 40% by mass or less, preferably 30% by mass or less.

  An acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of polymerization techniques include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method in which dicing tape 10 to dicing die bond film X are used, it is preferable that the amount of low molecular weight substances in adhesive layer 12 in dicing tape 10 to dicing die bond film X be small. The number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

  The pressure-sensitive adhesive layer 12 or a pressure-sensitive adhesive for forming the same may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of a base polymer such as an acrylic polymer. As an external crosslinking agent for reacting with a base polymer such as an acrylic polymer to form a crosslinked structure, polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, and melamine based crosslinking agents can be mentioned. . The content of the external crosslinking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for making the same is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, with respect to 100 parts by mass of the base polymer.

  Examples of the above-mentioned radiation-polymerizable monomer component for producing a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate and pentaerythritol tetra (meth) Acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the above-mentioned radiation-polymerizable oligomer component for producing a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and have a molecular weight of about 100 to 30,000. Is appropriate. The total content of the radiation polymerizable monomer component and the oligomer component in the radiation curable pressure sensitive adhesive is determined within a range where the adhesion of the pressure sensitive adhesive layer 12 to be formed can be appropriately reduced, and a base polymer such as an acrylic polymer The amount is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass. In addition, as the addition type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 contains, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or in the polymer main chain at the polymer main chain terminal Internal-type radiation-curable pressure-sensitive adhesives. Such an internal-type radiation-curable pressure-sensitive adhesive is suitable for suppressing unintended changes in adhesion properties caused by the movement of low molecular weight components in the pressure-sensitive adhesive layer 12 to be formed.

  As a base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive, one having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer including a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining, a compound having a predetermined functional group (second functional group) capable of causing a reaction with the first functional group (second functional group) and a radiation-polymerizable carbon-carbon double bond is carbon-carbon A method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of a double bond can be mentioned.

  Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Among these combinations, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of the ease of reaction tracking. In addition, although it is technically difficult to produce a polymer having a highly reactive isocyanate group, the first functional group on the acrylic polymer side is preferable from the viewpoint of preparation or availability of the acrylic polymer. It is more preferred if the group is a hydroxy group and the second functional group is an isocyanate group. In this case, examples of the isocyanate compound having both the radiation polymerizable carbon-carbon double bond and the isocyanate group as the second functional group include methacryloyl isocyanate, 2-methacryloyl oxyethyl isocyanate, and m-isopropenyl-α, α-dimethylbenzyl isocyanate is mentioned. Moreover, as an acrylic polymer with a 1st functional group, what contains the monomer unit derived from said hydroxy-group containing monomer is suitable, and 2-hydroxyethyl vinyl ether, 4-hydroxy butyl vinyl ether, diethylene glycol is preferable. Those containing monomer units derived from ether compounds such as monovinyl ether are also suitable.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphors. These include quinones, halogenated ketones, acyl phosphinoxides, and acyl phosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypro Piophenone and 1-hydroxycyclohexyl phenyl ketone can be mentioned. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)- Phenyl] -2-morpholinopropane-1 is mentioned. Examples of benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compounds include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compounds include 2-naphthalene sulfonyl chloride. Examples of photoactive oxime compounds include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Thioxanthone compounds include, for example, thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer.

  The above-mentioned heat-foaming type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. The foaming agent and the organic foaming agent may be mentioned, and as the thermally expandable microspheres, there may be mentioned, for example, microspheres having a configuration in which a substance which is easily gasified and expanded by heating is enclosed in a shell. As an inorganic type foaming agent, ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azides are mentioned, for example. As an organic foaming agent, for example, salt-fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azobisisobutyro nitriles, azodicarbonamides, azo compounds such as barium azodicarboxylate, para-toluenesulfonyl Hydrazine compounds such as hydrazide, diphenyl sulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allyl bis (sulfonyl hydrazide), ρ-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholine-1,2,3,4-thiatriazole, and N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl -N, N'-Dinitrosote N- nitroso compounds such as phthalamide may be mentioned. Substances which are easily gasified and expanded by heating to form the above-mentioned thermally expandable microspheres include, for example, isobutane, propane and pentane. Thermally expandable microspheres can be produced by encapsulating a substance that is easily gasified and expanded by heating into a shell-forming substance by coacervation or interfacial polymerization. As the shell-forming substance, a substance exhibiting heat melting property or a substance which can be ruptured by the action of thermal expansion of the encapsulating substance can be used. Such materials include, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

  As the above-mentioned non-adhesive force reducing type pressure-sensitive adhesive, for example, a pressure-sensitive adhesive in the form in which the radiation-curable pressure-sensitive adhesive described above with respect to the pressure-sensitive adhesive is cured by radiation irradiation in advance Be In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of non-adhesive force reducing type adhesive may be used, or two or more types of non-adhesive force non-reducing type adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive force reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive force reducing type adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive non-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive non-reducing type It may be formed of a pressure sensitive adhesive, and other portions may be formed of a pressure sensitive adhesive. In addition, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of the non-adhesive force reducing type adhesive, or some layers in the laminated structure have non-adhesive force non-reducing type It may be formed of an adhesive.

  A pressure-sensitive adhesive in the form in which a radiation-curable pressure-sensitive adhesive has been previously cured by radiation irradiation (radiation-cured radiation-curable pressure-sensitive adhesive) is an adhesion caused by the contained polymer component even though the adhesion is reduced by the radiation irradiation It is possible to exhibit the minimum required adhesive strength of the dicing tape pressure-sensitive adhesive layer in the dicing step or the like. In the present embodiment, when using a radiation-cured radiation-curable pressure-sensitive adhesive, the entire pressure-sensitive adhesive layer 12 may be formed of a radiation-cured radiation-curable pressure-sensitive adhesive in the surface spreading direction of the pressure-sensitive adhesive layer 12. A part of the pressure-sensitive adhesive layer 12 may be formed of a radiation-curable radiation-curable pressure-sensitive adhesive, and the other part may be formed of a non-irradiated radiation-curable pressure-sensitive adhesive.

  The dicing die-bonding film X including the radiation-cured radiation-curable pressure-sensitive adhesive in at least a part of the pressure-sensitive adhesive layer 12 can be manufactured, for example, through the following process. First, a pressure-sensitive adhesive layer (a radiation-curable pressure-sensitive adhesive layer) of a radiation-curable pressure-sensitive adhesive is formed on the base 11 of the dicing tape 10. Next, a predetermined part or the whole of the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer containing at least a part of a radiation-curable radiation-curable pressure-sensitive adhesive. Next, an adhesive layer to be the adhesive layer 20 described later is formed on the pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are formed together by, for example, a collective process formation method as described later on the pressure-sensitive adhesive layer and the adhesive layer. The dicing die-bonding film X including the radiation-cured radiation-curable pressure-sensitive adhesive in at least a part of the pressure-sensitive adhesive layer 12 can also be manufactured through the following process. First, a pressure-sensitive adhesive layer (a radiation-curable pressure-sensitive adhesive layer) of a radiation-curable pressure-sensitive adhesive is formed on the base 11 of the dicing tape 10. Next, an adhesive layer to be the adhesive layer 20 described later is formed on the radiation-curable pressure-sensitive adhesive layer. Next, a predetermined part or the whole of the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer including at least a part of the radiation-curable radiation-curable pressure-sensitive adhesive. Thereafter, the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are formed together by, for example, a collective process formation method as described later on the pressure-sensitive adhesive layer and the adhesive layer.

  On the other hand, as a pressure-sensitive adhesive in the adhesive layer 12, any known or commonly used adhesive can be used, and an acrylic adhesive or rubber-based adhesive having an acrylic polymer as a base polymer can be suitably used. . When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive pressure-sensitive adhesive, the acrylic polymer that is the base polymer of the acrylic pressure-sensitive adhesive preferably has a mass ratio of monomer units derived from (meth) acrylic acid ester As the largest main monomer unit. Such acrylic polymers include, for example, the acrylic polymers described above for radiation curable adhesives.

  The pressure-sensitive adhesive layer 12 or a pressure-sensitive adhesive for forming the same may contain, in addition to the components described above, a crosslinking accelerator, a tackifier, an antiaging agent, a coloring agent such as a pigment or a dye, . The colorant may be a compound that is colored upon exposure to radiation. Such compounds include, for example, leuco dyes.

  The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 5 to 25 μm. Such a configuration is suitable, for example, in the case where the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force to the adhesive layer 20 before and after the radiation-curing of the pressure-sensitive adhesive layer 12 .

  The adhesive layer 20 of the dicing die bond film X has both a function as a thermosetting adhesive for die bonding and an adhesive function for holding a workpiece such as a semiconductor wafer and a frame member such as a ring frame. Have. In the present embodiment, the adhesive for forming the adhesive layer 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may react with a curing agent. It may have a composition that includes a thermoplastic resin with a thermosetting functional group that can result in bonding. When the adhesive for forming the adhesive layer 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive needs to contain a thermosetting resin (such as an epoxy resin). Absent. Such an adhesive layer 20 may have a single layer structure or a multilayer structure.

  The adhesive layer 20 having both a function as an adhesive for die bonding and an adhesive function is an initial chuck distance 10 mm, a frequency 10 Hz, a dynamic strain ± 0.5 μm, and a temperature rise for an adhesive layer sample piece having a width of 4 mm. The tensile storage elastic modulus (first tensile storage elastic modulus) at -15 ° C measured under the condition of 5 ° C / min of velocity (measurement condition of tensile storage elastic modulus) is 1000 to 4000MPa, preferably 1200 to 3900MPa, more Preferably it is 1500-3800 MPa. At the same time, the adhesive layer 20 has a tensile storage modulus at 23 ° C. (second tensile storage modulus) of 10 to 240 MPa measured under the above-described tensile storage modulus measurement conditions for an adhesive layer sample piece having a width of 4 mm. Preferably it is 20-200 MPa, More preferably, it is 40-150 MPa. The tensile storage elastic modulus can be determined based on dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (trade name "Rheogel-E4000", manufactured by UBM). In the measurement, the size of the sample piece to be measured is 4 mm wide × 20 mm long, the initial chuck distance between the sample piece holding chucks is 10 mm, the measurement mode is a tensile mode, and the measurement temperature range is −30 ° C. The frequency is 10 Hz, the dynamic strain is ± 0.5 μm, and the temperature rising rate is 5 ° C./min.

  The adhesive layer 20 having both a function as an adhesive for die bonding and an adhesive function is SUS in a peeling test under the conditions (first condition) at -15 ° C., a peeling angle of 180 ° and a tensile speed of 300 mm / min. It exhibits a 180 ° peel adhesive strength of preferably 1 N / 10 mm or more, more preferably 1.5 N / 10 mm or more, more preferably 2 N / 10 mm or more, relative to a plane. In the peeling test under the first condition, the adhesive layer 20 exhibits a 180 ° peeling adhesive strength of, for example, 100 N / 10 mm or less, more preferably 50 N / 10 mm or less, with respect to the SUS plane. The adhesive layer 20 is 0.3 N / 10 mm or more, more preferably 0.3 N / 10 mm or more with respect to the SUS plane in a peeling test under the conditions (second condition) at 23 ° C., peeling angle 180 ° and tensile speed 300 mm / min. It exhibits a 180 ° peel adhesion of 0.4 N / 10 mm or more, more preferably 0.5 N / 10 mm or more. In the peeling test under the second condition, the adhesive layer 20 exhibits a 180 ° peeling adhesive strength of, for example, 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, with respect to the SUS plane. Such 180 ° peel adhesion can be measured using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation). The sample piece to be subjected to the measurement is backed by a backing tape (trade name “BT-315”, manufactured by Nitto Denko Corporation), and has a size of 10 mm wide × 100 mm long. Bonding of the sample piece to the adherend SUS plate is performed by a pressure bonding operation in which a 2 kg roller is reciprocated once. In this measurement, the measurement temperature or peeling temperature is -15 ° C (first condition) or 23 ° C (second condition), the peeling angle is 180 °, and the tensile speed is 300 mm / min. .

  When the adhesive layer 20 includes a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermal resin. A curable polyimide resin is mentioned. In forming the adhesive layer 20, one type of thermosetting resin may be used, or two or more types of thermosetting resin may be used. An epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20 because the content of ionic impurities and the like that may cause corrosion of the semiconductor chip to be die-bonded tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

  As an epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, ortho cresol Novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantoin type, tris glycidyl isocyanurate type, and glycidyl amine type epoxy resins. Novolac epoxy resins, biphenyl epoxy resins, trishydroxyphenylmethane epoxy resins, and tetraphenylolethane epoxy resins are rich in reactivity with phenol resin as a curing agent, and are excellent in heat resistance, so they are adhesives. It is preferable as the epoxy resin contained in the layer 20.

  As a phenol resin which can act as a hardening agent of an epoxy resin, polyoxystyrenes, such as a novolak type phenol resin, resol type phenol resin, and polypara oxystyrene, are mentioned, for example. The novolac type phenol resin includes, for example, phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin. As a phenol resin which can act as a curing agent for epoxy resin, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. When used as a curing agent for an epoxy resin as an adhesive for die bonding, a phenol novolac resin or a phenol aralkyl resin tends to improve the connection reliability of the adhesive, so the epoxy contained in the adhesive layer 20 Preferred as a curing agent for resins.

  From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has 0 hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

  The thermoplastic resin contained in the adhesive layer 20 is, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer And polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamide imide resins, and fluorine resins. Be In forming the adhesive layer 20, one type of thermoplastic resin may be used, or two or more types of thermoplastic resins may be used. As a thermoplastic resin contained in the adhesive layer 20, an acrylic resin is preferable because it is easy to secure the bonding reliability of the adhesive layer 20 because it has few ionic impurities and high heat resistance. In addition, from the viewpoint of coexistence with the adhesive property of the adhesive layer 20 to the ring frame described later at room temperature and a temperature near the same and the prevention of residue upon peeling, the adhesive layer 20 is a main component of the thermoplastic resin And a polymer having a glass transition temperature of -10 to 10 ° C. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio in the thermoplastic resin component.

As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) determined based on the following Fox equation can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of a homopolymer for each constituent monomer in the polymer. In the following Fox equation, Tg represents the glass transition temperature (° C.) of a polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i ). For the glass transition temperature of homopolymers, literature values can be used. For example, “New Polymer Bunko 7 Introduction to Synthetic Resins for Paints” (Kitaoka Kyozo, Polymer Journal, 1995) and “Acrylester Catalog (1997) (Mitsubishi Rayon Co., Ltd.) mentions glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in JP-A-2007-51271.
Fox's formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

  Preferably, the acrylic resin contained as a thermoplastic resin in the adhesive layer 20 contains a monomer unit derived from a (meth) acrylic acid ester as the largest main monomer unit in mass ratio. As such (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may be used it can. The acrylic resin contained as a thermoplastic resin in the adhesive layer 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. As such other monomer components, for example, functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, acrylonitrile and the like Group-containing monomers and various polyfunctional monomers; specifically, an acrylic polymer which is one component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be copolymerized with (meth) acrylic acid ester As the other monomer, the same one as described above can be used. From the viewpoint of achieving high cohesion in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic ester (in particular, the carbon number of the alkyl group is 4 or less A copolymer of (meth) acrylic acid alkyl ester), a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), and more preferably ethyl acrylate And copolymers of butyl acrylate, acrylic acid, acrylonitrile and polyglycidyl (meth) acrylate.

  The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50 from the viewpoint that the adhesive layer 20 properly exhibits the function as a thermosetting adhesive. It is mass%.

  When the adhesive layer 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from a (meth) acrylic acid ester as the largest main monomer unit in mass ratio. As such (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may be used it can. On the other hand, as a thermosetting functional group for forming a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, glycidyl group and carboxy group can be used suitably. That is, as a thermosetting functional group containing acrylic resin, a glycidyl group containing acrylic resin and a carboxy group containing acrylic resin can be used suitably. In addition, as the curing agent of the thermosetting functional group-containing acrylic resin, for example, using the above-described external crosslinking agent which may be regarded as one component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 it can. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound can be suitably used as a curing agent, and, for example, the various phenol resins described above can be used.

  In order to achieve a certain degree of crosslinking of the adhesive layer 20 before being cured for die bonding, for example, it reacts with the functional group at the molecular chain end of the above-mentioned resin contained in the adhesive layer 20, etc. It is preferable to mix | blend the polyfunctional compound which can be combined as a crosslinking agent in the resin composition for adhesive layer formation. Such a configuration is suitable for improving the adhesive properties under high temperature and for improving the heat resistance of the adhesive layer 20. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the resin composition for forming an adhesive layer is such that the cohesive force of the adhesive layer 20 formed is improved with respect to 100 parts by mass of the resin having the functional group that can react with the crosslinking agent and bond. The amount is preferably 0.05 parts by mass or more from the viewpoint, and preferably 7 parts by mass or less from the viewpoint of improving the adhesion of the adhesive layer 20 to be formed. In addition, as the crosslinking agent in the adhesive layer 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

  The content of the high molecular weight component as described above in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10000 or more. Such a configuration is preferable in order to achieve the cohesion of the adhesive layer 20 with respect to a ring frame described later at room temperature and a temperature in the vicinity thereof and the prevention of residue during peeling. The adhesive layer 20 may also contain a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable in order to achieve the cohesion of the adhesive layer 20 with respect to a ring frame described later at room temperature and a temperature in the vicinity thereof and the prevention of residue during peeling.

  The adhesive layer 20 may contain a filler. By blending the filler in the adhesive layer 20, it is possible to adjust the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20, and the physical properties such as the conductivity and the thermal conductivity. As a filler, although an inorganic filler and an organic filler are mentioned, an inorganic filler is especially preferable. As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal Besides amorphous silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be mentioned. The filler may have various shapes such as spheres, needles and flakes. As the filler in the adhesive layer 20, one kind of filler may be used, or two or more kinds of fillers may be used. The filler content of the adhesive layer 20 is preferably 30% by mass or less, more preferably 25% by mass or less, in order to ensure the adhesion of the adhesive layer 20 to the ring frame in the low temperature expansion step described later.

  When the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle diameter of the filler is 0.005 μm or more is suitable for achieving high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive layer 20. The configuration that the average particle diameter of the filler is 10 μm or less is suitable for obtaining sufficient filler addition effect in the adhesive layer 20 and securing heat resistance. The average particle diameter of the filler can be determined, for example, using a light intensity type particle size distribution analyzer (trade name “LA-910”, manufactured by HORIBA, Ltd.).

  The adhesive layer 20 may contain other components as needed. The other components include, for example, flame retardants, silane coupling agents, and ion trapping agents. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. As a silane coupling agent, for example, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane can be mentioned. As an ion trap agent, for example, hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, “IXE-300” manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (eg, “manufactured by Toagosei Co., Ltd.” IXE-100 ′ ′), magnesium silicate (eg, “Kyoward 600” manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (eg, “Kyoward 700” manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds capable of forming a complex with a metal ion can also be used as an ion trapping agent. Such compounds include, for example, triazole compounds, tetrazole compounds, and bipyridyl compounds. Among these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion. As such a triazole compound, for example, 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-) 5-Methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl) ) 5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2 -Benzotriazolyl) -4-tert-octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1 , 2-dicarboxydiethyl) Zotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5) -t-Butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl -3- [3-t-Butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- ( 1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-t-butylphenol, 2- (2 -Hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-) -Octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) ) Benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) Phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2 -Hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl- 4-hydroxyphenyl] propionate is mentioned. Also, predetermined hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can be used as the ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralpine, tannin, gallic acid, methyl gallate, pyrogallol and the like. As other components as described above, one type of component may be used, or two or more types of components may be used.

  The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.

  In the present embodiment, in the in-plane direction D of the dicing die bond film X, the outer peripheral end 20 e of the adhesive layer 20 is 1000 μm or less from the outer peripheral end 11 e of the substrate 11 and the outer peripheral end 12 e of the adhesive layer 12 in the dicing tape 10 , Preferably within a distance of 500 μm. That is, in the film in-plane direction D, the outer peripheral end 20 e of the adhesive layer 20 is between 1000 μm to 1000 μm inside, preferably 500 μm to 500 μm outside with respect to the outer edge 11 e of the substrate 11 And between the inner side 1000 μm and the outer side 1000 μm, preferably between the inner side 500 μm and the outer side 500 μm with respect to the outer peripheral end 12 e of the pressure-sensitive adhesive layer 12. In the configuration in which the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimensions in the in-plane direction D, the adhesive layer 20 is added to the area of the work application. It will include the area of frame attachment.

  The dicing die bond film X may be accompanied by a separator S as shown in FIG. Specifically, each dicing die bond film X may take a sheet-like form with a separator S, the separator S is long, and a plurality of dicing die bond films X are arranged thereon, and the separator S May be wound into the form of a roll. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die bond film X, and is separated from the film when using the dicing die bond film X. Examples of the separator S include plastic films and papers surface-coated with a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a release agent such as a fluorine release agent or a long chain alkyl acrylate release agent Be The thickness of the separator S is, for example, 5 to 200 μm.

  The dicing die bond film X having the above configuration can be manufactured, for example, as follows.

  The sheet body to be processed and formed into the dicing tape 10 of the dicing die bond film X is, as shown in FIG. 3A, on the base material 11 ′ to be processed and formed into the base material 11 The pressure-sensitive adhesive layer 12 ′ can be manufactured by providing the pressure-sensitive adhesive layer 12 ′. The resin base 11 'is manufactured by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, and the like. be able to. The film or substrate 11 'after film formation is subjected to a predetermined surface treatment as required. In the formation of the pressure-sensitive adhesive layer 12 ′, for example, after preparing a pressure-sensitive adhesive solution for forming a pressure-sensitive adhesive layer, first, the pressure-sensitive adhesive solution is applied onto the substrate 11 ′ or a predetermined separator Form a film. Examples of the method for applying the pressure-sensitive adhesive solution include roll coating, screen coating, and gravure coating. Next, in the pressure-sensitive adhesive film, a crosslinking reaction is caused as needed by heating, and the solvent is removed as required. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 'is formed on the separator, the pressure-sensitive adhesive layer 12' with the separator is attached to the substrate 11 ', and then the separator is peeled off. As described above, it is possible to produce a tape 10 ′ which is a sheet body to be processed and formed into the dicing tape 10.

  On the other hand, as shown in FIG. 3B, an adhesive film 20 ′ to be processed and formed into the adhesive layer 20 is produced. In preparation of adhesive film 20 ', after preparing the adhesive composition for adhesive layer formation, the said adhesive composition is first apply | coated on separator S, and an adhesive composition layer is formed. Examples of the method of applying the adhesive composition layer include roll coating, screen coating, and gravure coating. Next, in the adhesive composition layer, a crosslinking reaction is caused as needed by heating, and the solvent is removed as required. The heating temperature is, for example, 70 to 160 ° C., and the heating time is, for example, 1 to 5 minutes. As described above, the adhesive film 20 ′ with the separator S can be produced.

In the production of the dicing die bond film X, next, as shown in FIG. 3C, the pressure-sensitive adhesive layer 12 ′ side of the above-mentioned tape 10 ′ and the adhesive film 20 ′ are pressure-bonded and attached. Thereby, a laminated sheet body having a laminated structure including the separator S, the adhesive film 20 ′, the pressure-sensitive adhesive layer 12 ′, and the base 11 ′ is produced. In this step, the bonding temperature is, for example, 30 to 50 ° C., preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. When the pressure-sensitive adhesive layer 12 'is irradiated with radiation such as ultraviolet light after the bonding of the adhesive film 20' when the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described above, for example, perform radiation 'from the side of the pressure-sensitive adhesive layer 12' timber 11 in its dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The irradiation area is, for example, the entire pressure-sensitive adhesive layer 12 to be in close contact with the adhesive layer 20. Further, in the present invention, even when the pressure-sensitive adhesive layer 12 ′ to the pressure-sensitive adhesive layer 12 are designed as a radiation-curable pressure-sensitive adhesive layer such as an ultraviolet curing type, the adhesive film 20 ′ to the adhesive layer 20 Has a configuration that is not cured by irradiation with radiation such as ultraviolet light.

  Next, as shown in FIG. 3 (d), the above-mentioned laminated sheet body is processed such that the processing blade is pushed from the side of the base 11 'to the separator S (the cut portion in FIG. 3 (d) Is schematically represented by a thick line). For example, while rotating the laminated sheet in one direction F at a constant speed, it is disposed rotatably around an axis orthogonal to the direction F and a rotating roll with a processing blade with a processing blade for punching processing (shown in FIG. The processing bladed surface (not shown) is brought into contact with the base 11 'side of the laminated sheet with a predetermined pressing force. Thereby, the dicing tape 10 (the base material 11 and the pressure-sensitive adhesive layer 12) and the adhesive layer 20 are collectively processed and formed, and the dicing die bond film X is formed on the separator S. Thereafter, as shown in FIG. 3E, the material laminated portion around the dicing die bond film X is removed from the separator S.

  As described above, the dicing die bond film X can be manufactured.

  In the manufacturing process of the semiconductor device, as described above, an expanding step performed using dicing die bond film X, that is, an expanding step for cutting is performed to obtain a semiconductor chip with adhesive layer 20. In some cases, in the expanding step, the die bonding film as the adhesive layer can be cut by the expanding of the dicing tape while the work such as the semiconductor wafer and the frame member such as the ring frame are both held by the dicing die bonding film. is necessary. As described above, the adhesive layer 20 of the dicing die bond film X according to the present invention has the above first tensile storage elastic modulus at -15 ° C. of 1000 to 4000 MPa, preferably 1200 to 3900 MPa, more preferably 1500 It is ~ 3800 MPa. Such a configuration is suitable for cleaving the adhesive layer 20 in an expanding step carried out at a temperature lower than room temperature, such as -15 ° C., and a ring frame of the adhesive layer 20. Etc. are suitable for achieving good adhesion to the frame member. At the same time, as described above, the adhesive layer 20 of the dicing die bond film X has the above-mentioned second tensile storage modulus at 23 ° C. of 10 to 240 MPa, preferably 20 to 200 MPa, more preferably 40 to 150 MPa It is. Such a configuration is suitable for achieving good adhesion to a frame member such as a ring frame in the adhesive layer 20 at normal temperature, for example, before and after the expanding step. Thus, the dicing die-bonding film X is suitable for achieving good adhesion to the frame member while securing the cleavability in the expanding step in the adhesive layer 20.

  The dicing die-bonding film X having the adhesive layer 20 having both the adhesion to the frame member and the cleavability in the expanding step has a frame affixing area in addition to the work affixing area in the adhesive layer 20. With such a dicing die bond film X, it is possible to design the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon with substantially the same dimensions. For example, in the in-plane direction D of the dicing die bond film X, a design in which the outer peripheral end 20e of the adhesive layer 20 is within a distance of 1000 μm from the outer peripheral end 11e of the base 11 of the dicing tape 10 and the outer peripheral end 20e of the adhesive layer 12 It is possible to adopt. Such a dicing die bond film X is processed to form one dicing tape 10 having a laminated structure of the base 11 and the pressure-sensitive adhesive layer 12, and to form one adhesive layer 20. (1) It is suitable to carry out at one time by processing such as punching processing, and therefore suitable to efficiently manufacture from the viewpoint of reduction of the number of manufacturing processes and the viewpoint of suppression of the manufacturing cost.

  As described above, the dicing die bond film X is suitable for achieving good adhesion to the frame member while securing the cleavability in the expanding step in the adhesive layer 20, and suitable for efficient manufacturing. is there.

  The adhesive layer 20 of the dicing die bond film X is preferably at least 1 N / 10 mm with respect to the SUS plane in the peeling test under the conditions of -15 ° C., peeling angle of 180 ° and tensile speed of 300 mm / min. More preferably, it exhibits a 180 ° peel adhesion of 1.5 N / 10 mm or more, more preferably 2 N / 10 mm or more. Further, as described above, the adhesive layer 20 exhibits a 180 ° peel adhesive strength of, for example, 100 N / 10 mm or less, more preferably 50 N / 10 mm or less, with respect to the SUS plane in the peel test under the same conditions. The said structure regarding adhesive force is suitable in order to ensure the holding | maintenance of the flame | frame member by the dicing die-bonding film X in the temperature of -15 degreeC and its vicinity which are low temperature from room temperature.

  As described above, the adhesive layer 20 of the dicing die bond film X is 0.3 N / 10 mm or more with respect to the SUS plane in the peeling test under the conditions of 23 ° C., peeling angle 180 ° and tensile speed 300 mm / min. It preferably exhibits a 180 ° peel adhesion of 0.4 N / 10 mm or more, more preferably 0.5 N / 10 mm or more. In addition, as described above, the adhesive layer 20 exhibits a 180 ° peel adhesive strength of, for example, 20 N / 10 mm or less, more preferably 10 N / 10 mm or less, with respect to the SUS plane in the peel test under the same conditions. The said structure regarding adhesive force is suitable in order to ensure holding | maintenance of the flame | frame member by the dicing die-bonding film X in 23 degreeC and its vicinity temperature.

  4 to 9 show a method of manufacturing a semiconductor device according to an embodiment of the present invention.

  In the semiconductor device manufacturing method, first, as shown in FIG. 4A and FIG. 4B, the dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a of a predetermined depth is formed on the first surface Wa side using a rotating blade such as a dicing apparatus. The dividing groove 30a is an air gap for dividing the semiconductor wafer W into semiconductor chip units (in FIG. 4 to FIG. 6, the dividing groove 30a is schematically represented by a thick line).

  Next, as shown in FIG. 4C, bonding of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W Peeling is performed.

  Next, as shown in FIG. 4D, in a state where the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning step). Grinding can be performed using a grinding apparatus equipped with a grinding wheel. In the present embodiment, the semiconductor wafer 30A that can be singulated into the plurality of semiconductor chips 31 is formed by this wafer thinning step. Specifically, the semiconductor wafer 30A has a portion (connection portion) in which the portion to be singulated into the plurality of semiconductor chips 31 in the wafer is connected on the second surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. It is.

Next, as shown in FIG. 5A, the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bond film X. Thereafter, as shown in FIG. 5B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die bond film X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is attached to the adhesive layer 20 in place of the above-described radiation irradiation in the manufacturing process of the dicing die bond film X. After the alignment, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet light from the side of the substrate 11. Irradiation dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The region (irradiated region R shown in FIG. 1) where the irradiation as the adhesive force reducing measure of the pressure-sensitive adhesive layer 12 is performed in the dicing die bond film X is, for example, the peripheral edge thereof in the adhesive layer 20 bonding region in the pressure-sensitive adhesive layer 12 This is an area excluding parts.

  Next, after the ring frame 41 is attached on the adhesive layer 20 in the dicing die bond film X, as shown in FIG. 6A, the dicing die bond film X with the semiconductor wafer 30A is a holder for the expanding device. It is fixed at 42.

  Next, a first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 6B, and the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31. At the same time, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the dicing die bond film X in the figure, and dicing of the dicing die bond film X bonded to the semiconductor wafer 30A. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expanding is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa occurs in the dicing tape 10. The temperature conditions in the cool expanding step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 moves up) in the cool expanding step is preferably 0.1 to 100 mm / sec. Further, the amount of expansion in the cool expanding step is preferably 3 to 16 mm.

  In this process, cutting occurs in a thin and fragile portion of the semiconductor wafer 30A, and singulation to the semiconductor chip 31 occurs. At the same time, in this step, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded A tensile stress generated in the dicing tape 10 acts on a portion facing the dividing groove between 31 without such a deformation suppressing action. As a result, in the adhesive layer 20, the portion facing the dividing groove between the semiconductor chips 31 is cut. After the process, as shown in FIG. 6C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

  Next, a second expanding step under relatively high temperature conditions is performed as shown in FIG. 7A, and the distance (separation distance) between the adhesive layer-attached semiconductor chips 31 is expanded. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature conditions in the second expanding step are, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / second, preferably 0.3 to 1 mm / second. Moreover, the expand amount in a 2nd expand process is 3-16 mm, for example. In this process, the separation distance of the semiconductor chip 31 with an adhesive layer is expanded to such an extent that the semiconductor chip 31 with an adhesive layer can be properly picked up from the dicing tape 10 in a pickup process described later. After this process, as shown in FIG. 7B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. In order to suppress narrowing of the separation distance of the semiconductor chip 31 with an adhesive layer on the dicing tape 10 after releasing the expanded state, a portion outside the holding area of the semiconductor chip 31 in the dicing tape 10 before releasing the expanded state. It is preferable to heat and shrink.

  Next, after passing through a cleaning process for cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with an adhesive layer using a cleaning liquid such as water, as shown in FIG. The layered semiconductor chip 31 is picked up from the dicing tape 10 (pickup step). For example, with regard to the semiconductor chip 31 with an adhesive layer to be picked up, after raising the pin member 44 of the pickup mechanism in the lower side of the dicing tape 10 in the drawing with the adhesive layer, push it through the dicing tape 10. Do. In the pickup step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

  Next, as shown in FIG. 9A, the semiconductor chip 31 with the adhesive layer picked up is temporarily fixed to the predetermined adherend 51 via the adhesive layer 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 ° C. at the time of temporary adhesion of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa for the adherend 51. The configuration in which the shear adhesive strength of the adhesive layer 21 is 0.2 MPa or more is the bonding surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in the wire bonding step described later. It is suitable for performing wire bonding appropriately by suppressing the occurrence of shear deformation. The shear adhesive strength at 175 ° C. at the time of temporary adhesion of the adhesive layer 21 to the adherend 51 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa.

  Next, as shown in FIG. 9B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected through the bonding wire 52 ((b)) Wire bonding process). The wire connection between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is 80-250 degreeC, for example, Preferably it is 80-220 degreeC. The heating time is a few seconds to a few minutes.

  Next, as shown in FIG. 9C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing process). In this process, the thermal curing of the adhesive layer 21 proceeds. In this process, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. For example, an epoxy resin can be used as a constituent material of the sealing resin 53. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in the present step (the sealing step), a post-curing step for completely curing the sealing resin 53 is performed after the present step. Even if the adhesive layer 21 is not completely thermally cured in the sealing step, complete thermal curing of the adhesive layer 21 together with the sealing resin 53 is possible in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  As described above, a semiconductor device can be manufactured.

  In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without the adhesive layer 21 being completely cured by heat. Instead of such a configuration, in the present invention, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the wire bonding step may be performed after the adhesive layer 21 is thermally cured. .

  In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. After passing through the process described above with reference to FIG. 4C, in the wafer thinning process shown in FIG. 10, with the semiconductor wafer W held by the wafer processing tape T2, the wafer has a predetermined thickness. A semiconductor wafer divided body 30B including the plurality of semiconductor chips 31 and held by the wafer processing tape T2 is formed by grinding from the second surface Wb. In this step, a method (first method) of grinding the wafer may be employed until the dividing groove 30a itself is exposed to the second surface Wb side, or from the second surface Wb to the dividing groove 30a A method of grinding the wafer to the front, and then forming a crack between the division groove 30a and the second surface Wb by the action of the pressing force from the rotary grinding wheel to the wafer to form the semiconductor wafer division body 30B Method) may be adopted. Depending on the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 4A and 4B is appropriately determined. . In FIG. 10, the dividing grooves 30a subjected to the first method, or the dividing grooves 30a subjected to the second method and the cracks connected thereto are schematically represented by thick lines. In the present invention, the semiconductor wafer segments 30B manufactured in this manner are bonded to the dicing die bond film X instead of the semiconductor wafer 30A, and then each of the steps described above with reference to FIGS. 5 to 9 are performed. May be

  11A and 11B show a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. As shown in FIG. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is abutted against the dicing tape 10 at the lower side of the dicing die bond film X in the figure and is raised, and the dicing die bond film X bonded with the semiconductor wafer divisions 30B The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segments 30B. This expanding is performed under the condition that a tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. Moreover, the expand amount in this process is preferably 50 to 200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in this step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation occurs in each region in which the semiconductor chips 31 of the semiconductor wafer divisions 30B are in close contact While being suppressed, a tensile stress generated in the dicing tape 10 acts on a portion facing the dividing groove 30 a between the semiconductor chips 31 in a state where such a deformation suppressing action does not occur. As a result, in the adhesive layer 20, the portion facing the dividing groove 30a between the semiconductor chips 31 is cut.

  In the semiconductor device manufacturing method according to the present invention, a semiconductor wafer 30C manufactured as follows is used instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. It may be bonded to the dicing die bond film X.

As shown in FIGS. 12A and 12B, first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor processing apparatus collects the wafer inside the wafer while the semiconductor wafer W is held by the wafer processing tape T3. The laser beam combined with the light spots is irradiated to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned dividing line, and the semiconductor wafer W enters the semiconductor wafer W due to ablation by multiphoton absorption. The modified region 30 b is formed. The modified region 30 b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified region 30b on the planned dividing line by laser beam irradiation in the semiconductor wafer is described in detail in, for example, JP-A-2002-192370. The laser beam irradiation conditions in the present embodiment are, for example, It adjusts suitably within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser pumped Nd: YAG laser Wavelength 1064 nm
Laser beam spot cross section 3.14 × 10 ^-8 cm ²
Oscillation mode Q switch pulse Repetition frequency 100kHz or less Pulse width 1μs or less Output 1mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized (B) focusing lens Magnification: up to 100 times NA 0.55
Transmittance 100% or less for laser light wavelength (C) Movement speed of the processing table on which the semiconductor substrate is mounted 280 mm / s or less

  Next, as shown in FIG. 12C, while the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. As a result, the semiconductor wafer 30C that can be singulated into the plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, after the semiconductor wafer 30C manufactured as described above is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, each process described above with reference to FIGS. 5 to 9 is performed. It is also good.

  13A and 13B show a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. As shown in FIG. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the dicing die bond film X in the figure, and dicing of the dicing die bond film X bonded to the semiconductor wafer 30C. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanding is performed under the condition that a tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. Moreover, the expand amount in this process is preferably 50 to 200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in this process, a crack is formed in the fragile modified region 30 b in the semiconductor wafer 30 C, and singulation to the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region in which the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the cracked portion in a state where such a deformation suppressing action does not occur. As a result, in the adhesive layer 20, the portion facing the crack formation portion between the semiconductor chips 31 is cut.

  In the present invention, the dicing die bond film X can be used to obtain a semiconductor chip with an adhesive layer as described above, but an adhesive in the case where a plurality of semiconductor chips are stacked for three-dimensional mounting. It can also be used to obtain a layered semiconductor chip. A spacer may be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the adhesive layer 21 or may not be interposed.

Example 1
<Production of dicing tape>
In a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirrer, 100 parts by mol of dodecyl acrylate, 20 parts by mol of 2-hydroxyethyl acrylate (2 HEA), and 100 parts by mass of these monomer components A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). This gave a polymer solution containing an acrylic polymer P _1. The weight average molecular weight of the acrylic polymer P ₁ of the polymer solution (Mw) of 700,000. Next, a polymer solution containing the acrylic polymer P _1, 2-methacryloyloxy as acryloyloxyethyl isocyanate (MOI), the mixture containing the dibutyltin dilaurate as a catalyst for addition reaction, 24 hours at 50 ° C., under an air atmosphere With stirring (addition reaction). In the reaction solution, the amount of the MOI is 20 mol parts with respect to the acrylic acid dodecyl 100 molar parts, molar ratio of the MOI amount to the total amount of 2HEA derived units and the hydroxyl groups in the acrylic polymer P ₁ is It is 1. Further, in the reaction solution, the amount of dibutyltin dilaurate is 0.03 parts by mass of the acrylic polymer P ₁ 100 parts by weight. This addition reaction, to obtain a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain. Next, 1 part by mass of a polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (per 100 parts by mass of acrylic polymer P ₂ ) are added to the polymer solution. Add the brand name “IRGACURE 651”, 2,2-dimethoxy-1,2-diphenylethane-1-one (manufactured by BASF) and mix, and the viscosity of the mixture at room temperature is 500 mPa · s. Thus, the mixture was diluted with toluene to obtain a pressure-sensitive adhesive solution. Next, a pressure-sensitive adhesive solution is applied using an applicator on a silicone release-treated surface of a PET separator (38 μm thick) having a silicone release-treated surface to form a coating film, and this coating film is formed. C. for 2 minutes at 130.degree. C. to form a 10 .mu.m thick adhesive layer on the PET separator. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, manufactured by Kurashiki Spinning Co., Ltd.) on the exposed surface of this adhesive layer Were bonded at room temperature. As described above, the dicing tape in Example 1 was produced.

<Preparation of adhesive layer>
Acrylic resin A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1.2 million, glass transition temperature 0 ° C., epoxy value 0.4 eq / kg) 63 parts by mass and 1 part by mass of solid phenol resin (trade name “MEHC-7851 SS”, solid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd.) and liquid phenol resin (trade name “MEH-8000H”, liquid at 23 ° C., Meiwa Chemical Co., Ltd. 6 parts by mass and 30 parts by mass of silica filler (trade name “SO-C2”, average particle diameter is 0.5 μm, manufactured by Admatex Co., Ltd.) are added to methyl ethyl ketone and mixed, and the viscosity at room temperature is The concentration was adjusted to 700 mPa · s to obtain an adhesive composition. Next, an adhesive composition is applied using an applicator on a silicone release-treated surface of a PET separator (38 μm thick) having a silicone release-treated side to form a coating film, The membrane was heat dried at 130 ° C. for 2 minutes. As described above, the adhesive layer (thickness 10 μm) in Example 1 was produced on the PET separator.

<Production of dicing die bond film>
After peeling a PET separator from the above-mentioned dicing tape, the adhesive layer exposed in the dicing tape and the above-mentioned adhesive layer with a separator were pasted together at room temperature using a laminator to obtain a laminated sheet. Next, this laminated sheet body was subjected to a punching process in which a processing blade was pushed from the side of the EVA base of the dicing tape to the separator. Thus, a disc-shaped dicing die bond film having a diameter of 370 mm was formed on the separator. Next, ultraviolet rays were irradiated from the side of the substrate to the pressure-sensitive adhesive layer in the dicing tape. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . As described above, a dicing die bond film of Example 1 having a laminated structure including a dicing tape and an adhesive layer was produced.

Example 2
It was 70 parts instead of 63 parts by weight the amount of the acrylic resin A _1, a liquid phenolic resin (trade name "MEH-8000H", Meiwa Kasei Co., Ltd.) the amount of in place of 6 parts by weight 7 The adhesive layer of Example 1 except that it is made into parts by mass, and that the blending amount of the silica filler (trade name "SO-C2", manufactured by Admatex Co., Ltd.) is changed to 30 parts by mass and made into 22 parts by mass. The adhesive layer (thickness 10 μm) in Example 2 was prepared on a PET separator in the same manner as in Example 1. Then, a dicing die-bonding film of Example 2 was produced in the same manner as the dicing die-bonding film of Example 1 except that the adhesive layer in Example 2 was used instead of the adhesive layer in Example 1.

[Example 3]
It was 90 parts by weight in place of 63 parts by weight the amount of the acrylic resin A _1, instead of solid phenolic resin (trade name "MEHC-7851SS", Meiwa Kasei Co., Ltd.) the amount of the 1 part by mass 2 And 8 parts by mass instead of 6 parts by mass of a liquid phenol resin (trade name "MEH-8000H" manufactured by Meiwa Kasei Co., Ltd.), and a silica filler (trade name "SO" An adhesive layer (10 μm in thickness) in Example 3 was produced on a PET separator in the same manner as the adhesive layer of Example 1 except that “C2”, manufactured by Admatex Co., Ltd. was not used. Then, a dicing die-bonding film of Example 3 was produced in the same manner as the dicing die-bonding film of Example 1 except that the adhesive layer in Example 3 was used instead of the adhesive layer in Example 1.

Comparative Example 1
The blending amount of the acrylic resin A ₁ is changed to 63 parts by mass to 48 parts by mass, and the blending amount of the solid phenol resin (trade name “MEHC-7851 SS”, manufactured by Meiwa Kasei Co., Ltd.) is substituted to 1 part by mass. Parts by mass, liquid phenolic resin (trade name "MEH-8000H", manufactured by Meiwa Kasei Co., Ltd.) not used, and silica filler (trade name "SO-C2", manufactured by Admatex Co., Ltd.) An adhesive layer (10 μm in thickness) in Comparative Example 1 was prepared on a PET separator in the same manner as the adhesive layer of Example 1 except that the amount was changed to 30 parts by mass to 46 parts by mass. Then, a dicing die bonding film of Comparative Example 1 was produced in the same manner as the dicing die bonding film of Example 1 except that the adhesive layer in Comparative Example 1 was used instead of the adhesive layer in Example 1.

Comparative Example 2
Acrylic resin A ₁ Instead of 63 parts by mass, acrylic resin A ₂ (trade name “PARCLON W-116.3”, thermoplastic acrylate polymer, weight average molecular weight 900,000, glass transition temperature −22 ° C., An adhesive layer (10 μm in thickness) in Comparative Example 2 was prepared on a PET separator in the same manner as the adhesive layer in Example 1 except that 63 parts by mass of Negami Industrial Co., Ltd. was used. Then, a dicing die bonding film of Comparative Example 1 was produced in the same manner as the dicing die bonding film of Example 1 except that the adhesive layer in Comparative Example 2 was used instead of the adhesive layer in Example 1.

[Tensile storage modulus of adhesive layer]
The adhesive layers in Examples 1 to 3 and Comparative Examples 1 and 2 were subjected to dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring apparatus (trade name “Rheogel-E4000”, manufactured by UBM). The tensile storage modulus at −15 ° C. and the tensile storage modulus at 23 ° C. were determined. The sample piece to be subjected to the dynamic viscoelasticity measurement was prepared by forming a laminate in which each adhesive layer was laminated to a thickness of 80 μm, and then cutting out the laminate with a size of 4 mm wide × 20 mm long. In this measurement, the initial chuck distance of the sample piece holding chuck is 10 mm, the measurement mode is a tensile mode, the measurement temperature range is −30 ° C. to 100 ° C., the frequency is 10 Hz, and the dynamic strain is ± It was 0.5 μm, and the temperature rising rate was 5 ° C./min. The determined tensile storage modulus at −15 ° C. and the tensile storage modulus at 23 ° C. are listed in Table 1.

<Adhesive force of adhesive layer>
About the adhesive bond layer in each dicing die-bonding film of Examples 1-3 and Comparative Examples 1 and 2, 180 degrees peel adhesive strength in -15 ° C was investigated as follows. First, the adhesive layer is peeled off from the dicing tape, and a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is laminated to the surface of the adhesive layer that has been stuck to the dicing tape. A sample piece (width 10 mm × length 100 mm) was cut out from the backing film. Next, the sample piece was attached to a SUS plate as an adherend, and the sample piece and the adherend were pressure-bonded by a pressure-bonding operation in which a 2 kg roller is reciprocated once. And, after leaving for 30 minutes at room temperature, using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation), 180 ° peel adhesion of the adhesive layer sample to the SUS plate The force was measured. In this measurement, the measurement temperature or peeling temperature was -15 ° C., the tensile angle was 180 °, and the tensile speed was 300 mm / min. The average value of the peeling force after excluding the peeling force which shows the first 10 mm in a tension test was made into 180 degree peeling adhesive force (N / 10 mm). In addition, with respect to the adhesive layer in each dicing die bond film of Examples 1 to 3 and Comparative Examples 1 and 2, the 180 ° peel adhesive strength at -15 ° C except that the measurement temperature is changed to -15 ° C to 23 ° C. The 180 ° peel adhesion at 23 ° C. was measured as in the measurement. The results of these measurements are listed in Table 1.

<Frame retention at 23 ° C>
About each dicing die-bonding film of Examples 1-3 and Comparative Examples 1 and 2, adhesion nature thru / or maintenance nature at 23 ° C to a ring frame were investigated as follows. First, using a laminating apparatus (MA-3000II, manufactured by Nitto Seiki Co., Ltd.), a 12-inch diameter ring frame made of SUS (made by Disco Co., Ltd.) was laminated to the adhesive layer side of the dicing die bond film. The lamination was performed under the conditions of a lamination speed of 10 mm / sec and a temperature of 60.degree. Then, it was stored horizontally in the case and left to stand at 23 ° C. for one week. And the presence or absence of peeling of the ring frame from an adhesive bond layer was confirmed. The case where the peeling of the ring frame did not occur was evaluated as good (〇), and the case where the peeling of the ring frame occurred was evaluated as bad (×). The evaluation results are listed in Table 1.

<Frame retention at -15 ° C>
About each dicing die-bonding film of Examples 1-3 and Comparative Examples 1 and 2, adhesion nature thru / or maintenance nature at -15 ° C to a ring frame was investigated as follows. First, using a laminating apparatus (MA-3000II, manufactured by Nitto Seiki Co., Ltd.), a 12-inch diameter ring frame made of SUS (made by Disco Co., Ltd.) was laminated to the adhesive layer side of the dicing die bond film. The lamination was performed under the conditions of a lamination speed of 10 mm / sec and a temperature of 60.degree. After that, the ring frame attached dicing die bond film was horizontally stored in a wafer cassette of a die separation apparatus (trade name "die separator DDS 3200", manufactured by Disco Co., Ltd.), and left for 1 week at -15 ° C. . In the cassette for accommodating the dicing die bond film with ring frame, the holding portion provided in the cassette abuts on the ring frame to hold the dicing die bond film with ring frame, and the dicing die bond film is directly supported from the cassette It has not been received. And the presence or absence of peeling of the ring frame from an adhesive bond layer was confirmed. The case where the peeling of the ring frame did not occur was evaluated as good (〇), and the case where the peeling of the ring frame occurred was evaluated as bad (×). The evaluation results are listed in Table 1.

[Cutability in cool expand process (-15 ° C)]
Using each dicing die bond film of Examples 1 to 3 and Comparative Example 1, the following bonding step, first expanding step for cutting (cool expanding step), and second expanding for separation are performed. The process (normal temperature expanding process) was performed.

  In the bonding step, the divided semiconductor wafer held by the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the adhesive layer of the dicing die bond film, and then the semiconductor wafer The wafer processing tape was peeled off from the divided body. In bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. In addition, the semiconductor wafer divided body is formed and prepared as follows. First, about a bare wafer (12 inches in diameter, 780 μm in thickness, manufactured by Tokyo Chemical Industry Co., Ltd.) held with a ring frame on a wafer processing tape (trade name “V12S-R2-P”, manufactured by Nitto Denko Corporation) A split groove (25 μm in width, 50 μm in depth, 6 mm in one section) for singulation by its rotating blade using a dicing apparatus (trade name “DFD6260”, manufactured by Disco Co., Ltd.) from the side of one side thereof Forming a 12 mm grid). Next, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the dividing groove formation surface, and then the above-mentioned tape for wafer processing (trade name "V12S-R2-P") Was peeled from the wafer. After this, the wafer is ground to a thickness of 20 μm by grinding from the side of the other surface of the wafer (the surface on which the dividing grooves are not formed) using a back grind apparatus (trade name “DGP 8760”, manufactured by Disco Co., Ltd.) The ground surface was mirror-finished by dry polishing performed using the same apparatus. As described above, the semiconductor wafer divided body (in the state of being held by the wafer processing tape) was formed. The divided semiconductor wafer includes a plurality of semiconductor chips (6 mm × 12 mm).

  The cool expanding process was performed in the cool expanding unit using a die separation apparatus (trade name "Die Separator DDS 3200", manufactured by Disco Co., Ltd.). Specifically, first, in a frame affixing area (around the work affixing area) of the adhesive layer in the above-mentioned dicing die bond film accompanied by a semiconductor wafer division body, a SUS ring frame with a diameter of 12 inches (made by Disco Corporation ) At room temperature. Next, the dicing die bond film was set in the apparatus, and the dicing tape of the dicing die bond film with the semiconductor wafer divided body was expanded by the cool expand unit of the apparatus. In this cool expanding step, the temperature is -15 ° C, the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

  The normal temperature expanding process was performed in the normal temperature expanding unit using a die separation apparatus (trade name "Die Separator DDS 3200", manufactured by Disco Co., Ltd.). Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer divided body subjected to the above-mentioned cool expanding process was expanded by the normal temperature expanding unit of the same apparatus. In this normal temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Thereafter, the heat shrinking treatment was performed on the dicing die bond film which has undergone normal temperature expansion. The processing temperature is 200 ° C., and the processing time is 20 seconds.

  At the stage where the steps as described above were performed using each dicing die bond film of Examples 1 to 3 and Comparative Example 1, the cut adhesive layer with respect to the total number of semiconductor chips included in the semiconductor wafer divisions The percentage of the total number of semiconductor chips involved was investigated. Then, for the cleavability of the adhesive layer, the case where the ratio was 80% or more was evaluated as good (良), and the case where the ratio was less than 80% was evaluated as failure (×). The evaluation results are listed in Table 1.

[Evaluation]
The dicing die-bonding films of Examples 1 to 3 gave good results in all of the frame retention at room temperature and the frame retention and fracture in the cool expansion step (-15 ° C). On the other hand, in the dicing die-bonding film of Comparative Example 1, the ring frame can not be held by the adhesive layer at -15 ° C or 23 ° C because the tensile storage elastic modulus of the adhesive layer is too high. The The cool expand process using the dicing die bond film of Comparative Example 1 could not be performed. Moreover, in the dicing die-bonding film of the comparative example 2, since the tensile storage elastic modulus of the adhesive bond layer was too low, the said adhesive bond layer was not fully cut in the cool expansion process.

X dicing die bond film 10 dicing tape 11 base 11e outer peripheral end 12 adhesive layer 12e outer peripheral end 20, 21 adhesive layer 20e outer peripheral end W, 30A, 30C semiconductor wafer 30B semiconductor wafer divided body 30a divided groove 30b modified region 31 semiconductor Chip

Claims (8)

A dicing tape having a laminated structure including a substrate and an adhesive layer;
And an adhesive layer releasably adhering to the pressure-sensitive adhesive layer in the dicing tape,
The adhesive layer is measured on an adhesive layer sample piece having a width of 4 mm at an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of ± 0.5 μm, and a heating rate of 5 ° C./min. A dicing die bond film having a tensile storage modulus of 1000 to 4000 MPa and a tensile storage modulus at 23 ° C. measured under the conditions of 10 to 240 MPa.   The adhesive layer according to claim 1, wherein the adhesive layer exhibits a 180 ° peel adhesive strength of 1 N / 10 mm or more with respect to a SUS plane in a peel test under conditions of -15 ° C, a peel angle of 180 ° and a tensile speed of 300 mm / min. Dicing die bond film.   The adhesive layer exhibits a 180 ° peel adhesive strength of 0.3 N / 10 mm or more to a SUS plane in a peel test under conditions of 23 ° C., a peel angle of 180 ° and a tensile speed of 300 mm / min. The dicing die-bonding film as described in 2.   The dicing die-bonding film as described in any one of Claim 1 to 3 in which the said base material contains an ethylene-vinyl acetate copolymer.   The dicing die bond film according to any one of claims 1 to 4, wherein the adhesive layer contains a polymer having a glass transition temperature of -10 to 10 ° C.   The dicing die bond film according to any one of claims 1 to 5, wherein the adhesive layer contains a filler in a proportion of 30% by mass or less.   The dicing die bond film according to any one of claims 1 to 6, wherein the adhesive layer contains a high molecular weight component at a ratio of 50 to 100% by mass.   The dicing die bond film according to any one of claims 1 to 7, wherein the adhesive layer contains a liquid resin in a proportion of 1 to 10% by mass.

Images