JP7033003B2 - Dicing die bond film - Google Patents

Description

The present invention relates to a dicing die bond film that can be used in the manufacturing process of a semiconductor device.

In the process of manufacturing a semiconductor device, a dicing die bond film may be used to obtain a semiconductor chip having an adhesive film having a size equivalent to that of a chip for die bonding, that is, a semiconductor chip with a die bond film. The dicing die bond film has a size corresponding to the semiconductor wafer to be processed, and is, for example, a dicing tape composed of a base material and an adhesive layer and a die bond film (adhesive) that is detachably adhered to the adhesive layer side thereof. It has an agent layer).

As one of the methods for obtaining a semiconductor chip with a dicing film using a dicing die bond film, a method for expanding the dicing tape in the dicing die bond film and cutting the dicing film is known. In this method, first, the semiconductor wafer is bonded on the die bond film of the dicing die bond film. This semiconductor wafer is, for example, processed so that it can be later cut together with a die bond film and individualized into a plurality of semiconductor chips. Next, an expanding device is used to expand the dicing tape of the dicing die bond film so that a plurality of pieces of the dicing film, each of which is in close contact with the semiconductor chip, are generated from the dicing film on the dicing tape. Will be done. In this expanding step, the semiconductor wafer on the dicing film is also split at a portion corresponding to the split portion in the die bond film, and the semiconductor wafer is fragmented into a plurality of semiconductor chips on the dicing die bond film or the dicing tape. Next, in order to widen the separation distance for the plurality of semiconductor chips with die bond films after cutting on the dicing tape, another expanding step is performed. Next, after undergoing, for example, a cleaning step, each semiconductor chip is pushed up from the lower side of the dicing tape by a pin member of the pickup mechanism together with a die bond film having a size equivalent to the chip in close contact with the chip, and then picked up from the dicing tape. Ru. In this way, a semiconductor chip with a die-bonded film can be obtained. The semiconductor chip with a die-bonded film is fixed to an adherend such as a mounting substrate by die-bonding via the die-bonded film. For example, the techniques related to the dicing die bond film used as described above are described in, for example, Patent Documents 1 to 3 below.

Japanese Unexamined Patent Publication No. 2007-2173 Japanese Unexamined Patent Publication No. 2010-177401 Japanese Unexamined Patent Publication No. 2012-23161

FIG. 15 is a schematic cross-sectional view of a conventional dicing die bond film Y. The dicing die bond film Y is composed of a dicing tape 60 and a dicing film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 exhibiting adhesive strength. The die bond film 70 is in close contact with the pressure-sensitive adhesive layer 62 due to the adhesive strength of the pressure-sensitive adhesive layer 62. Such a dicing die bond film Y has a disk shape having a size corresponding to a semiconductor wafer to be processed or a workpiece in the manufacturing process of a semiconductor device, and can be used in the above-mentioned expanding process. For example, as shown in FIG. 16, the above-mentioned expanding step is carried out in a state where the semiconductor wafer 81 is attached to the die bond film 70 and the ring frame 82 is attached to the pressure-sensitive adhesive layer 62. The semiconductor wafer 81 is, for example, processed so that it can be individualized into a plurality of semiconductor chips.

The ring frame 82 is a frame member that, when attached to the dicing die bond film Y, mechanically abuts a transfer mechanism such as a transfer arm provided in the expanding device when the work is transferred. The conventional dicing die bond film Y is designed so that such a ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die bond film Y has a design in which the ring frame attachment area is secured around the die bond film 70 in the pressure-sensitive adhesive layer 62 of the dicing tape 60. In such a design, the distance between the outer peripheral end 62e of the pressure-sensitive adhesive layer 62 and the outer peripheral end 70e of the die-bonded film 70 in the in-plane direction of the film is about 10 to 30 mm.

The present invention has been conceived under the above circumstances, and an object thereof is to realize good adhesiveness to a frame member such as a ring frame while ensuring breakability in an expanding process. It is an object of the present invention to provide a dicing die bond film provided with an adhesive layer as a die bond film suitable for the above.

The dicing die bond film provided by the present invention includes a dicing tape and an adhesive layer as a die bond film. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is removably adhered to the adhesive layer in the dicing tape. The adhesive layer has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min for the adhesive layer sample piece having a width of 10 mm and a thickness of 160 μm. The tensile storage elastic modulus (first tensile storage elastic modulus) at 25 ° C. measured under the conditions is 5 to 120 MPa. At the same time, the adhesive layer has an initial chuck distance of 10 mm, a frequency of 900 Hz, a dynamic strain of 0.005%, and a heating rate of 5 ° C./min for the adhesive layer sample piece having a width of 5 mm and a thickness of 80 μm. The tensile storage elastic modulus (second tensile storage elastic modulus) at −15 ° C. measured under the above conditions is 3000 to 6000 MPa. The dicing die-bonded film having such a structure can be used to obtain a semiconductor chip with a dicing die-bonded film in the manufacturing process of a semiconductor device.

In the manufacturing process of the semiconductor device, as described above, in order to obtain the semiconductor chip with the die-bonded film, an expanding step performed by using the dicing die-bonded film, that is, an expanding step for cutting may be carried out. .. In this expanding step, it is necessary that the work such as a semiconductor wafer and the frame member such as a ring frame are both held by the dicing die bond film, and the die bond film can be cut by the expansion of the dicing tape.

As described above, the adhesive layer of the dicing die bond film as the die bond film has the above-mentioned first tensile storage elastic modulus at 25 ° C. of 5 to 120 MPa. Such a configuration is suitable for ensuring the adhesive force at room temperature to a frame member such as a ring frame in the dicing die bond film or its adhesive layer. Specifically, the same configuration is suitable for appropriately attaching the frame member to the dicing die bond film or its adhesive layer at room temperature. Further, the same configuration is suitable for realizing good adhesive strength in the adhesive layer which is at room temperature before and after the expanding step. The dicing die bond film is required to have no adhesive residue on the frame member when peeled from the frame member attached to the dicing die bond film (prevention of residue at the time of peeling). From the viewpoint of preventing a residue during peeling at room temperature, the first tensile storage elastic modulus at 25 ° C. is preferably 6 MPa or more, more preferably 7 MPa or more. From the viewpoint of realizing a high adhesive force to the frame member in the adhesive layer at room temperature, the first tensile storage elastic modulus at 25 ° C. is preferably 110 MPa or less, more preferably 100 MPa or less.

At the same time, as described above, the adhesive layer of the dicing die bond film has a second tensile storage elastic modulus of 3000 to 6000 MPa at −15 ° C. Such a configuration is suitable for cutting the adhesive layer in the expanding step carried out at a low temperature of −15 ° C. or its vicinity, and the adhesive force of the adhesive layer to the frame member at a low temperature. It is suitable for ensuring. From the viewpoint of achieving good splittability at a low temperature in the adhesive layer, the second tensile storage elastic modulus at −15 ° C. is preferably 3200 MPa or more, more preferably 3500 MPa or more. From the viewpoint of achieving a high adhesive force at a low temperature in the adhesive layer, the second tensile storage elastic modulus at −15 ° C. is preferably 5800 MPa or less, more preferably 5500 MPa or less. The higher the adhesive force to the frame member at the expanding step implementation temperature, the more the peeling of the adhesive layer or the dicing die bond film from the frame member in the expanding step tends to be suppressed.

As described above, the dicing die bond film is suitable for realizing good adhesiveness to a frame member such as a ring frame while ensuring breakability in the expanding step in the adhesive layer.

In such a dicing die bond film, the dicing tape or the adhesive layer thereof and the adhesive layer on the dicing tape are provided so that the adhesive layer includes the frame attachment area in addition to the work attachment area. It is possible to design with substantially the same dimensions in the in-plane direction of the film. For example, in the in-plane direction of the dicing die bond film, it is possible to adopt a design in which the outer peripheral edge of the adhesive layer is within 1000 μm from each outer peripheral edge of the base material of the dicing tape or the adhesive layer. .. Such a dicing die bond film is processed for forming one dicing tape having a laminated structure of a base material and an adhesive layer, and processing for forming one adhesive layer or a die bond film. Is suitable for batch implementation by one punching process or the like.

In the manufacturing process of the conventional dicing die bond film Y described above, a processing step (first processing step) for forming the dicing tape 60 of a predetermined size and shape and a die bond film 70 of a predetermined size and shape are performed. A processing step for forming (second processing step) is required as a separate process. In the first processing step, for example, a predetermined separator, a base material layer to be formed on the base material 61, and an adhesive located between these to be formed on the pressure-sensitive adhesive layer 62. The laminated sheet body having a laminated structure with the agent layer is processed so that the processing blade is inserted from the side of the base material layer to the separator. As a result, the dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base material 61 is formed on the separator. In the second processing step, for example, with respect to a laminated sheet body having a laminated structure of a predetermined separator and a die bond film to be formed on the die bond film 70, a processing blade from the side of the die bond film to the separator Is processed to rush. As a result, the die bond film 70 is formed on the separator. The dicing tape 60 and the dicing film 70, which are formed in the separate steps in this way, are then bonded while being aligned. FIG. 17 shows a conventional dicing die bond film Y with a separator 83 covering the surface of the die bond film 70 and the surface of the pressure-sensitive adhesive layer 62.

On the other hand, the dicing die bond film of the present invention adheres to the base material when the dicing tape or the adhesive layer thereof and the adhesive layer on the dicing tape have substantially the same design dimensions in the in-plane direction of the film. The process for forming one dicing tape having a laminated structure with the agent layer and the process for forming one adhesive layer are collectively performed by one punching process or the like. It is suitable for. Such a dicing die bond film is suitable for realizing good adhesive force to a frame member while ensuring breakability in the expanding process in the adhesive layer, and also reduces the number of manufacturing processes and suppresses manufacturing costs. Suitable for efficient production in terms of points and the like.

The shear adhesive force at −15 ° C. on the SUS plane in the adhesive layer of the dicing die bond film is preferably 66 N / cm ² or more, more preferably 68 N / cm ² or more, and more preferably 70 N / cm ² or more. be. The shear adhesive force is a value measured by the shear adhesive force measuring method described later with respect to the examples. The configuration regarding the shear adhesive force is suitable for ensuring the holding of the frame member by the dicing die bond film at a low temperature of −15 ° C. or its vicinity.

The adhesive layer of the dicing die bond film preferably contains a polymer component having a weight average molecular weight of 800,000 to 2000000 and a glass transition temperature of −10 to 3 ° C. Such a configuration balances the splittability of the adhesive layer at a low temperature, the adhesive force of the adhesive layer to the frame member, and the prevention of the residue when the adhesive layer is peeled off. , Suitable. The weight average molecular weight of the polymer is more preferably 900,000 or more, more preferably 1,000,000 or more, from the viewpoint of ensuring the splittability at a low temperature in the adhesive layer and the prevention of the residue at the time of peeling. From the viewpoint of ensuring the adhesive force of the adhesive layer to the frame member, the weight average molecular weight of the polymer is more preferably 1800000 or less, and more preferably 1500,000 or less. From the viewpoint of ensuring the splittability at a low temperature in the adhesive layer, the glass transition temperature of the polymer is more preferably −8 ° C. or higher, more preferably −6.5 ° C. or higher. From the viewpoint of ensuring the adhesive strength of the adhesive layer to the frame member at a low temperature, the glass transition temperature of the polymer is more preferably 0 ° C. or lower, more preferably -1.5 ° C. or lower.

The polymer component in the adhesive layer preferably contains a constituent unit derived from acrylonitrile. Such a configuration is due to the high polarity of the nitrile group in the unit of the polymer component in the adhesive layer, so that the adhesive layer has high adhesion to a metal frame member such as a SUS ring frame. It is preferable to realize.

The adhesive layer of the dicing die bond film preferably contains a silica filler in a proportion of 10 to 40% by mass. A configuration in which the silica filler content in the adhesive layer is 10% by mass or more is preferable in order to ensure splittability in the expanding step in the adhesive layer, and agglomerates in the adhesive layer. It is preferable to secure the force and prevent the above-mentioned residue at the time of peeling. In order to secure the adhesive force of the adhesive layer to the frame member at a low temperature, the silica filler content of the adhesive layer is preferably 40% by mass or less, more preferably 30% by mass or less, and more preferably. It is 25% by mass or less.

The pressure-sensitive adhesive layer of the dicing tape of the dicing die bond film is preferably a radiation-curable pressure-sensitive adhesive layer. When the dicing tape pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer, the dicing die-bonded film adheres to the pressure-sensitive adhesive layer before radiation curing in the T-type peeling test under the conditions of 23 ° C. and a peeling speed of 300 mm / min. The peeling force between the coating layer and the coating layer is preferably 0.5 N / 20 mm or more. Such a configuration regarding the peeling adhesive force is preferable in order to secure the adhesive force against the frame member in the adhesive layer.

The thickness of the adhesive layer in the dicing die bond film is preferably 7 to 30 μm. The configuration in which the thickness of the adhesive layer is 7 μm or more allows the adhesive layer to which the frame member is attached to follow the fine irregularities on the surface of the frame member and exhibit good adhesiveness to the frame member. It is preferable to do so. The configuration in which the thickness of the adhesive layer is 30 μm or less is preferable in order to ensure the splittability in the expand step in the adhesive layer.

It is sectional drawing of the dicing die bond film which concerns on one Embodiment of this invention. An example of the case where the dicing die bond film shown in FIG. 1 is accompanied by a separator is shown. A part of the steps in an example of the method for producing a dicing die bond film shown in FIG. 1 is shown. The process following the process shown in FIG. 3 is represented. The dicing die bond film shown in FIG. 1 represents a part of the steps in the method for manufacturing a semiconductor device using the dicing die bond film. The process following the process shown in FIG. 5 is represented. The process following the process shown in FIG. 6 is represented. The process following the process shown in FIG. 7 is represented. The process following the process shown in FIG. 8 is represented. The process following the process shown in FIG. 9 is represented. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. A part of the steps in the modification of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used is shown. It is sectional drawing of the conventional dicing die bond film. The usage mode of the dicing die bond film shown in FIG. 15 is shown. A supply form of the dicing die bond film shown in FIG. 15 is shown.

FIG. 1 is a schematic cross-sectional view of a dicing die bond film X according to an embodiment of the present invention. The dicing die bond film X has a laminated structure including the dicing tape 10 and the adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The pressure-sensitive adhesive layer 12 has a pressure-sensitive adhesive surface 12a on the side of the pressure-sensitive adhesive layer 20. The adhesive layer 20 includes a work attachment area and a frame attachment area, and is removably adhered to the adhesive layer 12 of the dicing tape 10 or the adhesive surface 12a thereof. The dicing die bond film X can be used in an expanding step as described below, for example, in the process of obtaining a semiconductor chip with a dicing film in the manufacture of a semiconductor device. Further, the dicing die bond film X has a disk shape having a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device, and the diameter thereof is, for example, in the range of 345 to 380 mm (12-inch wafer compatible type). It is in the range of 245 to 280 mm (8-inch wafer compatible type), 195 to 230 mm (6 inch wafer compatible type), or 495 to 530 mm (18 inch wafer compatible type).

The base material 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die bond film X. The base material 11 is, for example, a plastic base material, and a plastic film can be preferably used as the plastic base material. Examples of the constituent material of the plastic base material include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, and polyphenyl sulfide. Examples include aramid, fluororesin, cellulose-based resin, and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypolypoly, polybutene, polymethylpentene, and ethylene. -Vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Can be mentioned. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may be made of one kind of material or may be made of two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. When the base material 11 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the base material 11 has ultraviolet curability as described later, it is preferable that the base material 11 has ultraviolet transparency.

When the dicing tape 10 or the base material 11 is shrunk by, for example, partial heating in the process of using the dicing die bond film X, the base material 11 is preferably heat-shrinkable. From the viewpoint of ensuring good heat shrinkage in the base material 11, the base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio among the constituent components of the base material. When the base material 11 is made of a plastic film, the base material 11 is preferably a biaxially stretched film in order to realize isotropic heat shrinkage of the dicing tape 10 or the base material 11. The dicing tape 10 to the base material 11 has a heat shrinkage rate of, for example, 2 to 30% in a heat treatment test conducted under the conditions of a heat temperature of 100 ° C. and a heat treatment time of 60 seconds.

The surface of the base material 11 on the pressure-sensitive adhesive layer 12 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 12. Physical treatments include, for example, corona treatment, plasma treatment, sandmat processing, ozone exposure treatment, flame exposure treatment, high voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. It is preferable that the treatment for enhancing the adhesion is applied to the entire surface of the base material 11 on the pressure-sensitive adhesive layer 12 side.

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, and more preferably, from the viewpoint of ensuring the strength for the base material 11 to function as a support in the dicing tape 10 or the dicing die bond film X. Is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of achieving appropriate flexibility in the dicing tape 10 or the dicing die bond film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less. ..

The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The adhesive may be an adhesive (adhesive-reducing adhesive) that can intentionally reduce the adhesive force by an external action such as irradiation or heating, or may be adhesive depending on the external action. It may be a pressure-sensitive adhesive (adhesive strength non-reducing type pressure-sensitive adhesive) in which the force is hardly reduced or not reduced at all. Whether to use a pressure-reducing adhesive or a non-reducing adhesive as the adhesive in the adhesive layer 12 is a piece of a semiconductor chip that is individualized using a dicing die bond film X. It can be appropriately selected according to the usage mode of the dicing die bond film X, such as the method and conditions for dicing.

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, in the process of using the dicing die bond film X, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive strength and a relatively low adhesive strength. It is possible to use the indicated state properly. For example, when the dicing die bond film X is used in the expanding step described later, the high adhesive strength state of the adhesive layer 12 is set in order to suppress / prevent the adhesive layer 20 from floating or peeling from the adhesive layer 12. On the other hand, after that, in the pickup step described later for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the dicing die bond film X, the semiconductor chip with the adhesive layer is picked up from the adhesive layer 12. It is possible to utilize the low adhesive strength state of the adhesive layer 12 in order to facilitate picking up.

Examples of such a pressure-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (radiation-curable pressure-sensitive adhesive) and a heat-foaming type pressure-sensitive adhesive. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be a pressure-reducing pressure-sensitive adhesive. And other sites may be formed from a non-adhesive non-reducing pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of the pressure-reducing pressure-sensitive adhesive, and some layers in the laminated structure may be the pressure-reducing pressure-sensitive adhesive. It may be formed from.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a type of pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. A curable type pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

Examples of the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 include a base polymer such as an acrylic pressure-sensitive adhesive and a radiation-polymerizable monomer having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include additive-type radiation-curable pressure-sensitive adhesives containing components and oligomer components.

The acrylic polymer described above preferably contains a monomer unit derived from an acrylic acid ester and / or a methacrylic acid ester as the monomer unit having the largest mass ratio. In the following, "(meth) acrylic" means "acrylic" and / or "methacrylic", and "(meth) acrylate" means "acrylate" and / or "methacrylate".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer include hydrocarbon groups such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Included (meth) acrylic acid esters. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, Examples include octadecyl ester and ecosil ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include (meth) acrylic acid phenyl and (meth) acrylic acid benzyl. As the monomer component for forming the monomer unit of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. As the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, a (meth) acrylic acid alkyl ester having an alkyl group having 10 or more carbon atoms is preferable, and dodecyl acrylate is more preferable. Further, in order to appropriately express the basic properties such as the tackiness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the (meth) acrylic acid ester in all the monomer components for forming the acrylic polymer. Is preferably 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester in order to modify its cohesiveness, heat resistance and the like. Such other monomers include functionalities such as, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Group-containing monomers can be mentioned. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, 2-carboxyethyl (meth) acrylic acid, 5-carboxypentyl (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, and crotonic acid. .. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and (. Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxydodecyl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methyl propane sulfonic acid, (meth) acrylamide propane sulfonic acid, and sulfopropyl (meth) acrylate. .. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate. As the other copolymerizable monomer for the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as a (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropantri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( Meta) acrylate can be mentioned. As the monomer component for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The ratio of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is preferable in order to appropriately express the basic properties such as the tackiness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12. It is 40% by mass or less, preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Polymerization methods include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the method for manufacturing a semiconductor device in which the dicing tape 10 or the dicing die bond film X is used, it is preferable that the amount of low molecular weight substances in the pressure-sensitive adhesive layer 12 in the dicing tape 10 or the dicing die bond film X is small. The weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain, for example, an external cross-linking agent in order to increase the weight average molecular weight of the base polymer such as an acrylic polymer. Examples of the external cross-linking agent for reacting with a base polymer such as an acrylic polymer to form a cross-linked structure include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol-based compounds and the like), aziridine compounds, and melamine-based cross-linking agents. .. The content of the external cross-linking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer is preferably 6 parts by mass or less, and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the above-mentioned radiopolymerizable monomer component for forming a radiation-curable pressure-sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (meth). Examples include acrylates, dipentaerythritol monohydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the above-mentioned radiopolymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. The one is suitable. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range in which the adhesive strength of the formed pressure-sensitive adhesive layer 12 can be appropriately reduced by irradiation, and is determined by an acrylic polymer or the like. For example, it is 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 contains, for example, a polymer side chain having a functional group such as a radiation-polymerizable carbon-carbon double bond, or a base polymer having a functional group at the end of the polymer main chain in the polymer main chain. Also included is an intrinsically curable pressure-sensitive adhesive. Such an intrinsically curable pressure-sensitive adhesive is suitable for suppressing an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 12.

As the base polymer contained in the intrinsic radiation curable pressure-sensitive adhesive, a polymer having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer in the additive-type radiation-curable pressure-sensitive adhesive can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) capable of reacting with the first functional group and having a radiopolymerizable carbon-carbon double bond can be obtained as carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of the double bond.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of easiness of reaction tracking. Further, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, the above-mentioned first functionality on the acrylic polymer side is that the acrylic polymer can be easily produced or obtained. It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. In this case, the isocyanate compound having both a radiopolymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound is, for example, methacryloyl isocyanate, 2 -Methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzylisocyanate.

The radiation curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples include quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenylketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-. Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

The above-mentioned heat-foaming type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing a component that foams or expands by heating. Examples of the component that foams or expands by heating include a foaming agent and a heat-expandable microsphere.

Examples of the foaming agent for the heat foaming pressure-sensitive adhesive include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of the organic foaming agent include alkane hydrochloride, such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarboxylicamide, and barium azodicarboxylate, and paratoluenesulfonyl. Hydrazide and diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), hydrazine compounds such as allylbis (sulfonylhydrazide), ρ-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morphory-1,2,3,4-thiatriazole, as well as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl. Examples thereof include N-nitroso compounds such as -N, N'-dinitrosoterephthalamide.

Examples of the heat-expandable microspheres for the heat-foaming pressure-sensitive adhesive include microspheres having a structure in which a substance that easily gasifies and expands by heating is enclosed in a shell. Substances that are easily gasified and expanded by heating include, for example, isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can explode due to the action of thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the pressure-sensitive non-reducing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 include pressure-sensitive pressure-sensitive adhesives. As the pressure-sensitive pressure-sensitive adhesive, for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic pressure-sensitive adhesive preferably contains a monomer unit derived from a (meth) acrylic acid ester in a mass ratio. Included as the most abundant monomer unit in. Examples of such an acrylic polymer include the acrylic polymers described above with respect to the radiation curable pressure-sensitive adhesive.

As the pressure-sensitive pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, a pressure-sensitive adhesive in the form of the above-mentioned radiation-curable pressure-sensitive adhesive cured by irradiation may be used. Such a cured radiation-curable type adhesive may exhibit adhesiveness due to the polymer component depending on the content of the polymer component even if the adhesive force is reduced by irradiation, and is used for a predetermined period of time. In the embodiment, it is possible to exert the adhesive force that can be used to adhesively hold the adherend.

In the pressure-sensitive adhesive layer 12 of the present embodiment, one kind of non-reducing adhesive strength type adhesive may be used, or two or more kinds of non-reducing pressure-sensitive adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reducing adhesive strength type adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reduced pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be a non-reduced pressure-sensitive adhesive. It may be formed from a pressure-sensitive adhesive, and other portions may be formed from a pressure-reducing pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of a non-reduced adhesive strength type adhesive, and some layers in the laminated structure may be a non-reduced adhesive strength type. It may be formed from an adhesive.

In addition to the above-mentioned components, the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an antiaging agent, a coloring agent, and the like. Colorants include pigments and dyes. Further, the colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm. Such a configuration is suitable, for example, when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force of the pressure-sensitive adhesive layer 12 with respect to the pressure-sensitive adhesive layer 20 before and after radiation curing. Is.

The adhesive layer 20 of the dicing die bond film X has a function as a thermosetting adhesive for die bonding and an adhesive function for holding a work such as a semiconductor wafer and a frame member such as a ring frame described later. Also have. In the present embodiment, the adhesive for forming the adhesive layer 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as a binder component, and may react with the curing agent. It may have a composition containing a thermoplastic resin with a thermosetting functional group capable of forming a bond. When the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the pressure-sensitive adhesive may further include a thermosetting resin (epoxy resin, etc.). It does not need to be included. Such an adhesive layer 20 may have a single-layer structure or a multi-layer structure.

When the adhesive layer 20 contains a thermosetting resin together with a thermoplastic resin, the thermosetting resin may be, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, or a silicone resin. And thermosetting polyimide resin. As the thermosetting resin in the adhesive layer 20, one kind of resin may be used, or two or more kinds of resins may be used. Epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20 because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be die-bonded tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and orthocresol. Examples thereof include novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins. Novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin are highly reactive with phenol resin as a curing agent and have excellent heat resistance, so they are adherent. It is preferable as the epoxy resin contained in the coating layer 20.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. As the phenol resin that can act as a curing agent for the epoxy resin, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. Phenol novolac resin and phenol aralkyl resin are included in the adhesive layer 20 because they tend to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding. It is preferable as a curing agent for the epoxy resin.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent amount of epoxy groups in the epoxy resin component. It is contained in the adhesive layer 20 in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the adhesive layer 20. Is 10 to 50% by mass.

Examples of the thermoplastic resin contained in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid ester. Polymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluororesins. Can be mentioned. As the thermoplastic resin in the adhesive layer 20, one kind of resin may be used, or two or more kinds of resins may be used. As the thermoplastic resin contained in the adhesive layer 20, an acrylic resin is preferable because it has few ionic impurities and high heat resistance, so that it is easy to secure the bonding reliability by the adhesive layer 20.

The adhesive layer 20 preferably contains a polymer component having a weight average molecular weight of 800,000 to 2000,000 and a glass transition temperature of −10 to 3 ° C. as a main component of the thermoplastic resin. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio among the thermoplastic resin components. Such a configuration balances the splittability of the adhesive layer 20 at a low temperature, the adhesive force of the adhesive layer 20 to the frame member, and the prevention of the residue of the adhesive layer 20 at the time of peeling. It is suitable for planning. The weight average molecular weight of the polymer is more preferably 900,000 or more, more preferably 1,000,000 or more, from the viewpoint of ensuring the splittability at a low temperature in the adhesive layer 20 and the prevention of the residue at the time of peeling. From the viewpoint of ensuring the adhesive force of the adhesive layer 20 to the frame member, the weight average molecular weight of the polymer is more preferably 1800000 or less, and more preferably 1500,000 or less. From the viewpoint of ensuring the splittability of the adhesive layer 20 at a low temperature, the glass transition temperature of the polymer is more preferably −8 ° C. or higher, more preferably −6.5 ° C. or higher. From the viewpoint of ensuring the adhesive strength of the adhesive layer 20 to the frame member at a low temperature, the glass transition temperature of the polymer is more preferably 0 ° C. or lower, more preferably -1.5 ° C. or lower.

As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The Fox formula is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the Fox formula below, Tg represents the glass transition temperature (° C.) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i. ) Is shown. Literature values can be used for the glass transition temperature of the homopolymer. For example, "New Polymer Bunko 7 Introduction to Synthetic Resins for Paints" (Kyozo Kitaoka, Polymer Publishing Association, 1995) and "Acrylic Ester Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.) have various single weights. The combined glass transition temperature is mentioned. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be obtained by the method specifically described in JP-A-2007-51271.

Fox formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 preferably contains a monomer unit derived from the (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. Such other monomer components include, for example, functionalities such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Group-containing monomers and various polyfunctional monomers can be mentioned. Specifically, acrylic polymers that are one component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be copolymerized with (meth) acrylic acid esters. Other monomers similar to those described above can be used. From the viewpoint of achieving high cohesive force in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic acid ester, a carboxy group-containing monomer, and nitrogen. It is a copolymer of an atom-containing monomer and a polyfunctional monomer. As the (meth) acrylic acid ester, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms is preferable. As the polyfunctional monomer, a polyglycidyl-based polyfunctional monomer is preferable. The acrylic resin contained in the adhesive layer 20 is more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.

In the configuration in which the polymer component such as the acrylic polymer in the adhesive layer 20 contains the acrylonitrile-derived constituent unit, the nitrile group in the acrylonitrile-derived constituent unit of the polymer component in the adhesive layer 20 is highly polar. Therefore, the adhesive layer 20 is preferable for achieving high adhesion to a metal frame member such as a SUS ring frame.

When the adhesive layer 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from a (meth) acrylic acid ester as the main monomer unit having the largest mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the acrylic polymer which is one component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. can. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, as the curing agent for the thermosetting functional group-containing acrylic resin, for example, the above-mentioned external cross-linking agent may be used as a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. can. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound can be preferably used as the curing agent, and for example, the above-mentioned various phenol resins can be used.

In order to achieve a certain degree of cross-linking with respect to the adhesive layer 20 before being cured for die bonding, for example, the functional group at the end of the molecular chain of the above-mentioned resin contained in the adhesive layer 20. It is preferable to add a polyfunctional compound capable of reacting with the above to the resin composition for forming the adhesive layer as a cross-linking agent. Such a configuration is suitable for improving the adhesive properties of the adhesive layer 20 at high temperatures and for improving the heat resistance. Examples of such a cross-linking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediocyanate, 1,5-naphthalenediocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the cross-linking agent in the resin composition for forming the pressure-sensitive adhesive layer is the content of the pressure-sensitive adhesive layer 20 formed with respect to 100 parts by mass of the resin having the above-mentioned functional group that can react and bond with the cross-linking agent. From the viewpoint of improving the cohesive force, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive force of the formed adhesive layer 20, it is preferably 7 parts by mass or less. Further, as the cross-linking agent in the adhesive layer 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The content ratio of the above high molecular weight component in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. Such a configuration is preferable in order to achieve both the adhesiveness of the adhesive layer 20 to the frame member such as the ring frame described later at room temperature and the temperature in the vicinity thereof and the prevention of the residue at the time of peeling. Further, the adhesive layer 20 may contain a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable in order to achieve both the adhesiveness of the adhesive layer 20 to the frame member such as the ring frame described later at room temperature and the temperature in the vicinity thereof and the prevention of the residue at the time of peeling.

The adhesive layer 20 may contain a filler. By blending the filler into the adhesive layer 20, it is possible to adjust the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20 and the physical properties such as conductivity and thermal conductivity. Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystals. In addition to quality silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. One kind of filler may be blended in the adhesive layer 20, or two or more kinds of fillers may be blended. In order to ensure the splittability of the adhesive layer 20 in the expand step described later, the silica filler content of the adhesive layer 20 is preferably 10% by mass or more. In order to secure the cohesive force in the adhesive layer 20 and prevent the residue at the time of peeling from the frame member, the silica filler content ratio of the adhesive layer 20 is preferably 40% by mass or less, more preferably 40% by mass or less. It is 30% by mass or less, more preferably 25% by mass or less.

When the adhesive layer 20 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle size of the filler is 0.005 μm or more is suitable for realizing high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive layer 20. The configuration in which the average particle size of the filler is 10 μm or less is suitable for enjoying a sufficient filler addition effect in the adhesive layer 20 and ensuring heat resistance. The average particle size of the filler can be obtained, for example, by using a luminous intensity type particle size distribution meter (trade name "LA-910", manufactured by HORIBA, Ltd.).

The adhesive layer 20 may contain one or more other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion trapping agents. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydroxide-containing antimony (for example, "IXE-300" manufactured by Toa Synthetic Co., Ltd.), and zirconium phosphate having a specific structure (for example, "IXE-300" manufactured by Toa Synthetic Co., Ltd.). IXE-100 "), magnesium silicate (for example," Kyoward 600 "manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (for example," Kyoward 700 "manufactured by Kyowa Chemical Industry Co., Ltd.). A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, a triazole-based compound is preferable from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-). 5-Methylphenyl) Benzotriazole 2- (2-Hydroxy-3,5-di-t-butylphenyl) -5-Chlorobenzotriazole 2- (2-Hydroxy-3-t-butyl-5-methylphenyl) )-5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1) , 2-Dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazole-1-yl) methyl} phenol, 2 -(2-Hydroxy-5-t-butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2-H-benzotriazole-2-yl)) Phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2- (2H-benzotriazole-2) -Il) -6- (1-Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazole-2-yl) -4-t -Butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5) -Methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-Chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2) H-Benzotriazole-2-yl] -4- (1,1,3,3-tetramethylbutyl) phenol] 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] Examples thereof include -2H-benzotriazole and methyl-3- [3- (2-H-benzotriazole-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trapping agent. Examples of such hydroxyl group-containing compounds include 1,2-benzenediol, alizarin, anthralphin, tannin, gallate, methyl gallate, and pyrogallol.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm, preferably 7 to 30 μm. The configuration in which the thickness of the adhesive layer 20 is 7 μm or more is such that the adhesive layer 20 to which the frame member is attached follows the fine irregularities on the surface of the frame member and has good adhesiveness to the frame member. It is preferable to exert. The configuration in which the thickness of the adhesive layer 20 is 30 μm or less is preferable in order to secure the splittability in the expand step described later in the adhesive layer 20.

The adhesive layer 20 has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min for the adhesive layer sample piece having a width of 10 mm and a thickness of 160 μm. The tensile storage elastic modulus (first tensile storage elastic modulus) at 25 ° C. measured under the above conditions is 5 to 120 MPa. The first tensile storage elastic modulus is preferably 6 MPa or more, more preferably 7 MPa or more, and preferably 110 MPa or less, more preferably 100 MPa or less.

The adhesive layer 20 has an initial chuck distance of 10 mm, a frequency of 900 Hz, a dynamic strain of 0.005%, and a heating rate of 5 ° C./min for the adhesive layer sample piece having a width of 5 mm and a thickness of 80 μm. The tensile storage elastic modulus (second tensile storage elastic modulus) at −15 ° C. measured in is 3000 to 6000 MPa. The second tensile storage elastic modulus is preferably 3200 MPa or more, more preferably 3500 MPa or more, and preferably 5800 MPa or less, more preferably 5500 MPa or less.

The shear adhesive force of the adhesive layer 20 with respect to the SUS plane at −15 ° C. is preferably 66 N / cm ² or more, more preferably 68 N / cm ² or more, and more preferably 70 N / cm ² or more. The shear adhesive force is a value measured by the shear adhesive force measuring method described later with respect to the examples. The configuration regarding the shear adhesive force is suitable for ensuring the holding of the frame member by the dicing die bond film X at a low temperature of −15 ° C. or its vicinity.

In the present embodiment, in the in-plane direction D of the dicing die bond film X, the outer peripheral end 20e of the adhesive layer 20 is formed from the outer peripheral end 11e of the base material 11 and the outer peripheral end 12e of the pressure-sensitive adhesive layer 12 in the dicing tape 10. The distance is within 1000 μm, preferably within 700 μm, more preferably within 500 μm, and more preferably within 300 μm. That is, the outer peripheral end 20e of the adhesive layer 20 covers the entire circumference from 1000 μm inside to 1000 μm outside with respect to the outer peripheral ends 11e and 12e of the base material 11 and the pressure-sensitive adhesive layer 12 in the in-plane direction D of the film. It is preferably between 700 μm inside and 700 μm outside, more preferably between 500 μm inside and 500 μm outside, and more preferably between 300 μm inside and 300 μm outside. In the configuration in which the dicing tape 10 or the pressure-sensitive adhesive layer 12 thereof and the pressure-sensitive adhesive layer 20 on the dicing tape 10 have substantially the same dimensions in the in-plane direction D, the pressure-sensitive adhesive layer 20 is as described above. In addition to the work attachment / attachment area, the frame member attachment / attachment area is included on the surface 20a side.

In the dicing die bond film X, when the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer before radiation curing in the T-type peeling test at 23 ° C. and a peeling speed of 300 mm / min. The peeling force between 12 and the adhesive layer 20 is preferably 0.6 N / 20 mm or more. Such a T-type peeling test can be performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece to be subjected to the test is prepared as follows. First, in the dicing die bond film X, the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with ultraviolet rays of 350 mJ / cm ² from the side of the base material 11. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is attached to the adhesive layer 20 side of the dicing die bond film X, and then a sample piece having a width of 50 mm and a length of 120 mm is attached. Cut out.

The dicing die bond film X may be accompanied by a separator S as shown in FIG. Specifically, each dicing die bond film X may be in the form of a sheet with a separator S, or the separator S is long and a plurality of dicing die bond films X are arranged on the separator S. May be rolled into the form of a roll. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die bond film X, and is peeled off from the dicing die bond film X when it is used. Examples of the separator S include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, plastic films and papers surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. Be done. The thickness of the separator S is, for example, 5 to 200 μm.

The dicing die bond film X having the above structure can be manufactured, for example, as follows.

First, as shown in FIG. 3A, the adhesive composition layer C1 is formed on the elongated separator S. The adhesive composition layer C1 can be formed by applying the adhesive composition prepared for forming the adhesive layer 20 onto the separator S. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating.

Next, as shown in FIG. 3B, the pressure-sensitive adhesive composition layer C2 is formed on the pressure-sensitive adhesive composition layer C1. The pressure-sensitive adhesive composition layer C2 can be formed by applying a pressure-sensitive adhesive composition prepared for forming the pressure-sensitive adhesive layer 12 onto the pressure-sensitive adhesive composition C1. Examples of the coating method of the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating.

Next, as shown in FIG. 3C, the adhesive layer 20'was subjected to a batch heat treatment of the adhesive composition layer C1 and the adhesive composition layer C2 on the separator S. And the pressure-sensitive adhesive layer 12'is formed. In this heat treatment, both layers are dried as needed, and a cross-linking reaction is caused in both layers as needed. The heating temperature is, for example, 60 to 175 ° C., and the heating time is, for example, 0.5 to 5 minutes. The adhesive layer 20'is to be processed and formed into the adhesive layer 20 described above. The pressure-sensitive adhesive layer 12'is to be processed and formed into the above-mentioned pressure-sensitive adhesive layer 12.

Next, as shown in FIG. 3D, the base material 11'is pressure-bonded onto the pressure-sensitive adhesive layer 12'and bonded. The base material 11'is processed and formed into the above-mentioned base material 11. The resin base material 11'is produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. be able to. The film or the base material 11'after the film formation is subjected to a predetermined surface treatment as needed. In this step, the bonding temperature is, for example, 30 to 50 ° C, preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. By this step, a long laminated sheet body having a laminated structure of a separator S, an adhesive layer 20', an adhesive layer 12', and a base material 11'is obtained.

Next, as shown in FIG. 4A, the laminated sheet body is subjected to processing in which the processing blade is inserted from the side of the base material 11'to the separator S (in FIG. 4A, the cutting portion is cut. Is schematically represented by a thick line). For example, while flowing the laminated sheet body in one direction F at a constant speed, it is rotatably arranged around an axis orthogonal to that direction F, and a processing blade for punching is attached to the roll surface of a rotary roll with a processing blade (illustrated). The surface with the machined blade of (omitted) is brought into contact with the base material 11'side of the laminated sheet body with a predetermined pressing force. As a result, the dicing tape 10 (base material 11, adhesive layer 12) and the adhesive layer 20 are collectively processed and formed. After a plurality of laminates each containing the dicing tape 10 and the adhesive layer 20 are processed and formed on the separator S in this way, each laminate (dicing) is as shown in FIG. 4 (b). The material laminated portion around the tape 10 and the adhesive layer 20) is removed from the separator S.

As described above, the dicing die bond film X can be manufactured.

In the manufacturing process of the semiconductor device, as described above, in order to obtain the semiconductor chip with the die-bonded film, an expanding step performed by using the dicing die-bonded film, that is, an expanding step for cutting may be carried out. .. In this expanding step, it is necessary that the work such as a semiconductor wafer and the frame member such as a ring frame are both held by the dicing die bond film, and the die bond film can be cut by the expansion of the dicing tape 10.

As described above, the adhesive layer 20 of the dicing die bond film X according to the above embodiment has a first tensile storage elastic modulus of 5 to 120 MPa at 25 ° C. Such a configuration is suitable for ensuring the adhesive force of the dicing die bond film X or its adhesive layer 20 to a frame member such as a ring frame at room temperature. Specifically, the same configuration is suitable for appropriately attaching the frame member to the dicing die bond film X or the adhesive layer 20 thereof at room temperature. Further, the same configuration is suitable for realizing good adhesive strength in the adhesive layer 20 at room temperature before and after the expanding step. The dicing die bond film X is required to have no adhesive residue on the frame member when peeled from the frame member attached to the dicing die bond film X (prevention of residue at the time of peeling). From the viewpoint of preventing a residue during peeling at room temperature in the layer 20, the first tensile storage elastic modulus at 25 ° C. is preferably 6 MPa or more, more preferably 7 MPa or more. From the viewpoint of realizing a high adhesive force to the frame member in the adhesive layer 20 at room temperature, the first tensile storage elastic modulus at 25 ° C. is preferably 110 MPa or less, more preferably 100 MPa or less.

At the same time, the adhesive layer 20 of the dicing die bond film X has a second tensile storage elastic modulus of 3000 to 6000 MPa at −15 ° C. as described above. Such a configuration is suitable for cutting the adhesive layer 20 in the expanding step carried out at a low temperature of −15 ° C. or its vicinity, and at a low temperature with respect to the frame member in the adhesive layer 20. It is suitable for ensuring the adhesive force. From the viewpoint of achieving good splittability at a low temperature in the adhesive layer 20, the second tensile storage elastic modulus at −15 ° C. is preferably 3200 MPa or more, more preferably 3500 MPa or more. From the viewpoint of achieving a high adhesive force at a low temperature in the adhesive layer 20, the second tensile storage elastic modulus at −15 ° C. is preferably 5800 MPa or less, more preferably 5500 MPa or less. The higher the adhesive force to the frame member at the expanding step implementation temperature, the more the peeling of the adhesive layer 20 or the dicing die bond film X from the frame member in the expanding step tends to be suppressed.

As described above, the dicing die bond film X is suitable for realizing good adhesiveness to a frame member such as a ring frame while ensuring breakability in the expanding step in the adhesive layer 20.

Further, as described above, the dicing die bond film X in which the dicing tape 10 or the pressure-sensitive adhesive layer 12 thereof and the adhesive layer 20 on the dicing tape 10 have substantially the same design dimensions in the in-plane direction of the film is a base material. The process for forming one dicing tape 10 having a laminated structure of 11 and the pressure-sensitive adhesive layer 12 and the process for forming one adhesive layer 20 are performed by one punching process or the like. Suitable for batch implementation and production. Such a dicing die bond film X is suitable for realizing good adhesive force to the frame member while ensuring breakability in the expanding process in the adhesive layer 20, and also reduces the number of manufacturing processes and suppresses the manufacturing cost. It is suitable for efficient production in terms of the above points.

The shear adhesive force of the dicing die bond film X on the SUS plane in the adhesive layer 20 at −15 ° C. is preferably 66 N / cm ² or more, more preferably 68 N / cm ² or more, and more preferably 68 N / cm 2 or more, as described above. It is 70 N / cm ² or more. Such a configuration regarding the shear adhesive force is suitable for ensuring the holding of the frame member by the dicing die bond film X at a low temperature of −15 ° C. or its vicinity.

As described above, the adhesive layer 20 of the dicing die bond film X preferably contains a polymer component having a weight average molecular weight of 800,000 to 2000,000 and a glass transition temperature of −10 to 3 ° C. Such a configuration balances the splittability of the adhesive layer 20 at a low temperature, the adhesive force of the adhesive layer 20 to the frame member, and the prevention of the residue of the adhesive layer 20 at the time of peeling. It is suitable for planning. As described above, the weight average molecular weight of the polymer is more preferably 900,000 or more, more preferably 1,000,000, from the viewpoint of ensuring the splittability at low temperature in the adhesive layer 20 and the prevention of the residue at the time of peeling. That is all. As described above, from the viewpoint of ensuring the adhesive force of the adhesive layer 20 to the frame member, the weight average molecular weight of the polymer is more preferably 1800000 or less, and more preferably 1500,000 or less. As described above, from the viewpoint of ensuring the splittability of the adhesive layer 20 at a low temperature, the glass transition temperature of the polymer is more preferably −8 ° C. or higher, more preferably −6.5 ° C. or higher. be. As described above, from the viewpoint of ensuring the adhesive strength of the adhesive layer 20 against the frame member at a low temperature, the glass transition temperature of the polymer is more preferably 0 ° C. or lower, more preferably -1.5 ° C. It is as follows.

As described above, the pressure-sensitive adhesive layer 12 of the dicing tape 10 of the dicing die-bond film X is preferably a radiation-curable pressure-sensitive adhesive layer 12. When the dicing tape 10 pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer 12, the pressure-sensitive adhesive layer before radiation curing in the T-type peeling test at 23 ° C. and a peeling speed of 300 mm / min in the dicing die bond film X. The peeling force between the 12 and the adhesive layer 20 is preferably 0.5 N / 20 mm or more, as described above. Such a configuration regarding the peeling adhesive force is preferable in order to secure the adhesive force against the frame member in the adhesive layer 20.

5 to 10 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In the present semiconductor device manufacturing method, first, as shown in FIGS. 5A and 5B, a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the Wa side of the first surface by using a rotating blade such as a dicing device. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (the dividing groove 30a is schematically represented by a thick line in FIGS. 5 to 7).

Next, as shown in FIG. 5C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is attached. Is peeled off.

Next, as shown in FIG. 5D, with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning step, in the present embodiment, a semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. Is.

Next, as shown in FIG. 6A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bond film X. After that, as shown in FIG. 6B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bond film X is a radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 20 of the semiconductor wafer 30A is used instead of the above-mentioned radiation irradiation in the manufacturing process of the dicing die-bond film X. After bonding, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11. The irradiation amount is, for example, 50 to 500 mJ / cm ² , preferably 100 to 300 mJ / cm ² . The region (irradiation region R shown in FIG. 1) in which the dicing die bond film X is irradiated as a measure for reducing the adhesive strength of the pressure-sensitive adhesive layer 12 is, for example, in the region where the pressure-sensitive adhesive layer 20 is bonded in the pressure-sensitive adhesive layer 12. This is the area excluding the peripheral part.

Next, after the ring frame 41 is attached on the adhesive layer 20 in the dicing die bond film X, as shown in FIG. 7A, the dicing die bond film X with the semiconductor wafer 30A is the expanding device. It is fixed to the holder 42.

Next, the first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 7B, and the semiconductor wafer 30A is fragmented into a plurality of semiconductor chips 31. At the same time, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing of the dicing die bond film X bonded to the semiconductor wafer 30A is diced. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that the dicing tape 10 produces a tensile stress preferably in the range of 15 to 32 MPa, more preferably 20 to 32 MPa. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in the cool expanding step is preferably 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

In this step, the thin-walled and fragile portion of the semiconductor wafer 30A is split, resulting in individualization into the semiconductor chip 31. At the same time, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region in which each semiconductor chip 31 is in close contact, while deformation is suppressed. The tensile stress generated in the dicing tape 10 acts on the portion facing the dividing groove between the semiconductor chips 31 in a state where such deformation suppressing action does not occur. As a result, the portion of the adhesive layer 20 facing the dividing groove between the semiconductor chips 31 is cut. After this step, as shown in FIG. 7C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

Next, the second expanding step under relatively high temperature conditions is performed as shown in FIG. 8A, and the distance (separation distance) between the semiconductor chips 31 with the adhesive layer is increased. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor chip 31 with the adhesive layer is widened to the extent that the semiconductor chip 31 with the adhesive layer can be appropriately picked up from the dicing tape 10 in the pickup step described later. After this step, as shown in FIG. 8B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. In order to prevent the distance between the semiconductor chips 31 with the adhesive layer on the dicing tape 10 from being narrowed after the expanded state is released, the outside of the semiconductor chip 31 holding region of the dicing tape 10 is before the expanded state is released. It is preferable to heat and shrink the portion of.

Next, after undergoing a cleaning step as necessary to clean the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with the adhesive layer using a cleaning liquid such as water, as shown in FIG. The semiconductor chip 31 with the adhesive layer is picked up from the dicing tape 10 (pickup step). For example, with respect to the semiconductor chip 31 with the adhesive layer to be picked up, the pin member 44 of the pickup mechanism is raised on the lower side in the drawing of the dicing tape 10 and pushed up through the dicing tape 10, and then the suction jig 45 is used. Adsorb and hold. In the pickup step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 10A, the picked up semiconductor chip 31 with the adhesive layer is temporarily fixed to the predetermined adherend 51 via the adhesive layer 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 ° C. at the time of temporary fixing of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shear adhesive force of the adhesive layer 21 is 0.2 MPa or more is such that the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 are subjected to ultrasonic vibration or heating in the wire bonding step described later. It is suitable for appropriately performing wire bonding by suppressing the occurrence of shear deformation on the adhesive surface with.

Next, as shown in FIG. 10B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via the bonding wire 52 (not shown). Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating, and is performed so as not to thermally cure the adhesive layer 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is from several seconds to several minutes.

Next, as shown in FIG. 10C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 on the adherend 51 and the bonding wire 52 (sealing step). In this step, the thermosetting layer 21 is thermally cured. In this step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. Even if the adhesive layer 21 is not completely heat-cured in the sealing step, the adhesive layer 21 can be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

As described above, the semiconductor device can be manufactured.

In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without the adhesive layer 21 being completely thermoset. Will be done. Instead of such a configuration, the semiconductor chip 31 with the adhesive layer may be temporarily fixed to the adherend 51, and then the adhesive layer 21 may be thermally cured before the wire bonding step may be performed. ..

In the semiconductor device manufacturing method, after the above-mentioned process is performed with reference to FIG. 5 (c), the wafer thinning step shown in FIG. 11 is replaced with the above-mentioned wafer thinning step with reference to FIG. 5 (d). The process may be performed. In the wafer thinning step shown in FIG. 11, while the semiconductor wafer W is held on the wafer processing tape T2, the wafer is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. A semiconductor wafer divider 30B including a plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method) may be adopted, or from the second surface Wb side to the dividing groove 30a. A method of grinding the wafer to the front and then forming a semiconductor wafer split body 30B by causing a crack between the split groove 30a and the second surface Wb by the action of a pressing force from the rotary grindstone to the wafer (second). Method) may be adopted. Depending on the method adopted, the depth of the split groove 30a formed as described above with reference to FIGS. 5 (a) and 5 (b) from the first surface Wa is appropriately determined. .. In FIG. 11, the dividing groove 30a that has undergone the first method, the dividing groove 30a that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. In the present embodiment, the semiconductor wafer divider 30B thus produced is bonded to the dicing die bond film X in place of the above-mentioned semiconductor wafer 30A, and is described above with reference to FIGS. 6 to 10. Each step may be performed.

12 (a) and 12 (b) show a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. In this step, the hollow columnar push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing die bond film X to which the semiconductor wafer divider 30B is bonded is attached. The dicing tape 10 of the above is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed on the dicing tape 10 under the condition that a tensile stress is generated in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. The amount of expansion in this step is preferably 50 to 200 mm. By such a cool expanding step, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. Specifically, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, in each region in which each semiconductor chip 31 of the semiconductor wafer divider 30B is in close contact. While the deformation is suppressed, the tensile stress generated in the dicing tape 10 acts on the portion facing the dividing groove 30a between the semiconductor chips 31 without such a deformation suppressing action. As a result, the portion of the adhesive layer 20 facing the dividing groove 30a between the semiconductor chips 31 is cut off.

In the semiconductor device manufacturing method of the present embodiment, instead of the above-mentioned configuration in which the semiconductor wafer 30A or the semiconductor wafer divider 30B is bonded to the dicing die bond film X, the dicing die bond film X is as follows. The semiconductor wafer 30C produced in the above may be bonded.

As shown in FIGS. 13 (a) and 13 (b), first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held inside the wafer while being held by the wafer processing tape T3. Laser light with the same light spot is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned division line, and into the semiconductor wafer W due to ablation due to multiphoton absorption. The modified region 30b is formed. The modified region 30b is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30b on a planned division line by irradiating a semiconductor wafer with a laser beam is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. In the method, the laser light irradiation conditions in the present embodiment are appropriately adjusted within the range of, for example, the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linear polarization (B) Condensing lens Magnification 100x or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Movement speed of the mounting table on which the semiconductor substrate is placed 280 mm / sec or less

Next, with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness, and is shown in FIG. 13 (c). As shown, a semiconductor wafer 30C that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). In the present embodiment, the semiconductor wafer 30C produced as described above is bonded to the dicing die bond film X in place of the semiconductor wafer 30A, and then each step described above with reference to FIGS. 6 to 10 is performed. It may be done.

14 (a) and 14 (b) show a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised in contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film X, and the dicing of the dicing die bond film X bonded to the semiconductor wafer 30C is diced. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed on the dicing tape 10 under the condition that a tensile stress is generated in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is preferably 1 to 500 mm / sec. The amount of expansion in this step is preferably 50 to 200 mm. By such a cool expanding step, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. Specifically, in this step, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and individualization into the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region of the semiconductor wafer 30C in which each semiconductor chip 31 is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the crack forming portion without such a deformation suppressing action. As a result, the portion of the adhesive layer 20 facing the crack-forming portion between the semiconductor chips 31 is cut off.

As described above, the dicing die bond film X can be used to obtain a semiconductor chip with an adhesive layer. Further, the dicing die bond film X can also be used to obtain a semiconductor chip with an adhesive layer when a plurality of semiconductor chips are laminated and three-dimensionally mounted. A spacer may or may not be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the adhesive layer 21.

<Making dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 mol parts of dodecyl acrylate, 20 mol parts of 2-hydroxyethyl acrylate (2HEA), and 100 mass of these monomer components. A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours in a nitrogen atmosphere (polymerization reaction). As a result, a polymer solution containing the acrylic polymer P ₁ was obtained. The weight average molecular weight (Mw) of the acrylic polymer P ₁ in the polymer solution was 450,000. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst was mixed at room temperature for 48 hours under an air atmosphere. Stirred (addition reaction). In the reaction solution, the molar ratio of the MOI compounding amount to the total amount of the 2HEA-derived unit or its hydroxyl group in the acrylic polymer P ₁ is 0.2. Further, in the reaction solution, the blending amount of dibutyltin dilaurylate is 0.03 part by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain was obtained. Next, in the polymer solution, 0.75 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) and 2 parts by mass of photopolymerization were started with respect to 100 parts by mass of the acrylic polymer P ₂ . Add and mix the agent (trade name "Irgacure 184", manufactured by BASF), and add toluene to the mixture so that the viscosity of the mixture at room temperature becomes 500 mPa · s, dilute the mixture, and dilute the adhesive solution. Got Next, an adhesive solution is applied on the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface using an applicator to form a coating film, and this coating film is formed. Was dried by heating at 130 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 μm on the PET separator. Next, using a laminator, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-013", thickness 125 μm, manufactured by Kurabo Industries Ltd.) was used on the exposed surface of this pressure-sensitive adhesive layer. Was bonded at room temperature. The dicing tape was produced as described above.

<Formation of adhesive layer>
Acrylic resin A ₁ (polymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature -1.5 ° C) 60 parts by mass and solid phenol resin (trade name) "MEH-7851SS", solid at 23 ° C, manufactured by Meiwa Kasei Co., Ltd.) 15 parts by mass and silica filler (trade name "SO-E2", average particle size 0.5 μm, manufactured by Admatex Co., Ltd.) 25 parts by mass Was added to and mixed with methyl ethyl ketone, and the concentration was adjusted so that the viscosity at room temperature was 1000 mPa · s to obtain a viscous adhesive composition. Next, the adhesive composition was applied to the release-treated surface of the PET separator (thickness 38 μm) having the release-treated surface using an applicator to form a coating film, and the coating film was formed. After heat-drying at 130 ° C. for 2 minutes, a pressure-sensitive adhesive layer as a die-bond film having a thickness of 10 μm was formed on the PET separator.

<Preparation of dicing die bond film>
After peeling the PET separator from the above-mentioned dicing tape, the adhesive layer exposed on the dicing tape and the above-mentioned adhesive layer with the PET separator are bonded together at room temperature using a laminator to form a laminated sheet body. Obtained. Next, the laminated sheet body was punched by inserting a processing blade from the EVA base material side of the dicing tape to the separator. Specifically, while flowing the laminated sheet body in one direction at a speed of 10 m / min, it is rotatably arranged around the axis orthogonal to that direction, and a Thomson blade for circular punching is wound around the roll surface. The surface with the machined blade of the rotary roll with the machined blade was brought into contact with the EVA base material side of the laminated sheet body with a predetermined pressing force to perform punching. The circumferential length, that is, the peripheral length of the rotary roll used for this punching process is 378.9 mm. The Thomson blade wound around the surface of the rotary roll is made of SUS and is arranged on the roll surface so that a circle with a diameter of 370 mm can be punched. The height of the blade is 0.3 mm, and the blade made by the cutting edge. The angle is 50 °. By such punching, the dicing tape and the adhesive layer were collectively processed and formed in a disk shape, and the dicing die bond film was formed on the separator. After that, the material laminated portion around the formed dicing die bond film was removed from the separator. As described above, the dicing die bond film of Example 1 having a laminated structure including the dicing tape and the adhesive layer as the die bond film was produced. The composition of the adhesive layer in Example 1 is shown in Table 1 together with the composition of the adhesive layer of other Examples and Comparative Examples (in Table 1, the unit of each numerical value relating to the composition of the adhesive layer is Relative "parts by mass" within the layer).

[Example 2]
The amount of acrylic resin A ₁ was changed to 48 parts by mass instead of 60 parts by mass, and the amount of solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Kasei Co., Ltd.) was changed to 12 parts by mass. Adhesive of Example 1 except that the amount of the silica filler (trade name "SO-E2", manufactured by Admatex Co., Ltd.) was changed to 40 parts by mass instead of 25 parts by mass. The adhesive layer (thickness 10 μm) in Example 2 was prepared on the PET separator in the same manner as the agent layer. Then, the dicing die bond film of Example 2 was prepared in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of the adhesive layer of Example 2 was used instead of the adhesive layer of the adhesive layer of Example 1. Made.

[Example 3]
Acrylic resin A ₁ Instead of 60 parts by mass, acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature -6.5 ° C) 60 The adhesive layer (thickness 10 μm) in Example 3 was prepared on the PET separator in the same manner as the adhesive layer of Example 1 except that the mass part was used. Then, the dicing die bond film of Example 3 was prepared in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of the adhesive layer of Example 3 was used instead of the adhesive layer of the adhesive layer of Example 1. Made.

[Example 4]
Acrylic resin A ₁ Instead of 60 parts by mass, acrylic resin A ₂ (polymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature -6.5 ° C) 48 The use of parts by mass, the compounding amount of the solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Kasei Co., Ltd.) was changed to 12 parts by mass instead of 15 parts by mass, and the silica filler (trade name "" SO-E2 ”, manufactured by Admatex Co., Ltd.) is the same as the adhesive layer of Example 1 except that the blending amount is 40 parts by mass instead of 25 parts by mass. An agent layer (thickness 10 μm) was prepared on a PET separator. Then, the dicing die bond film of Example 4 was used in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of the adhesive layer of Example 4 was used instead of the adhesive layer of the adhesive layer of Example 1. Made.

[Comparative Example 1]
Acrylic resin A ₁ Instead of 60 parts by mass, acrylic resin A ₃ (polymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature 4 ° C) 42.4 mass The amount of solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Kasei Co., Ltd.) was changed to 10.6 parts by mass instead of 15 parts by mass, and the silica filler (trade name) was used. "SO-E2" (manufactured by Admatex Co., Ltd.) was added in an amount of 47 parts by mass instead of 25 parts by mass in the same manner as the adhesive layer of Example 1 and adhered in Comparative Example 1. A coating layer (thickness 10 μm) was prepared on a PET separator. Then, the dicing die bond film of Comparative Example 1 was used in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of the adhesive layer of Comparative Example 1 was used instead of the adhesive layer of the adhesive layer of Example 1. Made.

[Comparative Example 2]
Acrylic resin A ₁ Instead of 60 parts by mass, acrylic resin A ₂ (polymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1000000, glass transition temperature -6.5 ° C) 48 The mass part was used, the compounding amount of the solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Kasei Co., Ltd.) was changed to 20 parts by mass instead of 15 parts by mass, and the silica filler was not used. Except for this, the adhesive layer (thickness 10 μm) in Comparative Example 2 was prepared on the PET separator in the same manner as the adhesive layer of Example 1. Then, the dicing die bond film of Comparative Example 2 was used in the same manner as the dicing die bond film of Example 1 except that the adhesive layer of the adhesive layer of Comparative Example 2 was used instead of the adhesive layer of the adhesive layer of Example 1. Made.

[First tensile storage elastic modulus (25 ° C)]
Based on the dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (trade name "RSAIII", manufactured by TA Instruments) for each viscoelasticity layer in Examples 1 to 4 and Comparative Examples 1 and 2. , The tensile storage elastic modulus at 25 ° C. (first tensile storage elastic modulus) was investigated. The sample pieces to be used for dynamic viscoelasticity measurement were prepared by forming a laminate in which each adhesive layer was laminated to a thickness of 160 μm, and then cutting out from the laminate in a size of 10 mm in width × 30 mm in length. .. In this measurement, the initial chuck distance between the sample piece holding chucks is 22.5 mm, the measurement mode is the tensile mode, the measurement temperature range is -30 ° C to 100 ° C, the frequency is 1 Hz, and the dynamic strain. Was 0.005%, and the temperature rising rate was 10 ° C./min. Table 1 shows the obtained tensile storage elastic modulus (MPa) at 25 ° C.

[Second tensile storage elastic modulus (-15 ° C)]
For dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring device (trade name "Rheogel-E4000", manufactured by UBM) for each of the viscoelasticity layers in Examples 1 to 4 and Comparative Examples 1 and 2. Based on this, the tensile storage elastic modulus at −15 ° C. (second tensile storage elastic modulus) was investigated. The sample pieces to be used for dynamic viscoelasticity measurement were prepared by forming a laminate in which each adhesive layer was laminated to a thickness of 80 μm, and then cutting out from the laminate in a size of 5 mm in width × 25 mm in length. .. In this measurement, the initial chuck distance between the sample piece holding chucks is 10 mm, the measurement mode is the tensile mode, the measurement temperature range is -30 ° C to 100 ° C, the frequency is 900 Hz, and the dynamic strain is 0. The temperature was set to .005% and the temperature rising rate was set to 5 ° C./min. The obtained second tensile storage elastic modulus (MPa) at -15 ° C is listed in Table 1.

<Shear adhesive strength>
For each of the dicing die bond films of Examples 1 to 4 and Comparative Examples 1 and 2, the shear adhesive force with respect to the SUS plate at −15 ° C. was measured. The sample pieces used for this measurement were prepared as follows. First, in the dicing die bond film, the adhesive layer was peeled off from the dicing tape. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko KK) was attached to the side surface of the adhesive layer that had been attached to the dicing tape. Then, a sample piece having a width of 10 mm and a length of 100 mm was cut out from the obtained backing adhesive layer.

The prepared sample pieces were bonded to a SUS plate at room temperature. This SUS plate has undergone surface cleaning treatment by wiping with a non-woven fabric wiper impregnated with toluene and wiping with a non-woven fabric wiper impregnated with methanol. In the bonding work, a region of 10 mm × 10 mm at one end of the sample was crimped against the end of the SUS plate with a one-way load by a 2 kg roller. Then, after leaving the sample piece and the SUS plate at room temperature for 30 minutes, the shear adhesive force was measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). In this measurement, the measured temperature was −15 ° C., the tensile speed was 1000 mm / min, and the maximum stress value obtained was taken as the shear adhesive force (N / cm ² ).

<Frame retention at 23 ° C>
For each of the dicing die bond films of Examples 1 to 4 and Comparative Examples 1 and 2, the adhesiveness or retention to the ring frame was examined as follows. First, a 12-inch diameter SUS ring frame (manufactured by Disco Corporation) was bonded to the adhesive layer side of the dicing die bond film using a bonding device (MA-3000II, manufactured by Nitto Seiki Co., Ltd.). .. This bonding was performed under the conditions of a bonding speed of 10 mm / sec and a temperature of 60 ° C. Then, it was stored in a case in a horizontal state and left at room temperature for one week. Then, it was confirmed whether or not the ring frame was peeled off from the adhesive layer. The case where the ring frame did not peel off from the dicing die bond film or its adhesive layer was evaluated as good, and the case where the ring frame peeled off was evaluated as defective. The evaluation results are listed in Table 1.

[Cutability in cool expand process (-15 ° C)]
Using the dicing die bond films of Examples 1 to 4 and Comparative Examples 1 and 4, the following bonding step, the first expanding step for cutting (cool expanding step), and the first for separating. 2 Expanding step (normal temperature expanding step) was performed.

In the bonding process, the semiconductor wafer divider held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer of the dicing die bond film, and then bonded. The wafer processing tape was peeled off from the semiconductor wafer divider. In the bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. Further, the semiconductor wafer divided body is formed and prepared as follows. First, about the bare wafer (diameter 12 inches, thickness 780 μm, manufactured by Tokyo Kako Co., Ltd.) held together with the ring frame on the wafer processing tape (trade name “V12S-R2-P”, manufactured by Nitto Denko Corporation). , From the side of one side, a dicing device (trade name "DFD6260", manufactured by DISCO Corporation) is used, and a dividing groove for individualization (width 25 μm, depth 50 μm, one section 6 mm ×) is used by the rotating blade. It forms a 12 mm grid). Next, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is attached to the split groove forming surface, and then the above wafer processing tape (trade name "V12S-R2-P") is attached. Was peeled off from the wafer. After that, using a back grind device (trade name "DGP8760", manufactured by DISCO Corporation), the wafer is ground to a thickness of 20 μm by grinding from the other surface (the surface on which the dividing groove is not formed) of the wafer. The ground surface was mirror-finished by dry polishing using the same device. As described above, the semiconductor wafer divider (in a state of being held by the wafer processing tape) was formed. This semiconductor wafer divider contains a plurality of semiconductor chips (6 mm × 12 mm).

The cool expand step was performed in the cool expand unit using a die separate device (trade name "Die Separator DDS3200", manufactured by DISCO Corporation). Specifically, first, a SUS ring frame having a diameter of 12 inches (Co., Ltd.) is placed in the frame attachment / attachment area (around the work attachment / attachment area) of the adhesive layer in the above-mentioned dicing die bond film accompanied by the semiconductor wafer partition. (Made by Disco) was pasted at room temperature. Next, the dicing die bond film was set in the apparatus, and the dicing tape of the dicing die bond film accompanied by the semiconductor wafer divider was expanded by the cool expand unit of the apparatus. In this cool expanding step, the temperature is −15 ° C., the expanding speed is 300 mm / sec, and the expanding amount is 15 mm.

The room temperature expanding step was performed in the room temperature expanding unit using a die separate device (trade name “Die Separator DDS3200”, manufactured by DISCO Corporation). Specifically, the dicing tape of the dicing die bond film with the semiconductor wafer split body that has undergone the above-mentioned cool expand step was expanded by the room temperature expanding unit of the same apparatus. In this normal temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. After that, the dicing die bond film that had undergone normal temperature expansion was heat-shrinked. The treatment temperature is 200 ° C. and the treatment time is 20 seconds.

In the steps as described above using the dicing die bond films of Examples 1 to 4 and Comparative Examples 1 and 2, the bonded adhesion was divided with respect to the total number of semiconductor chips contained in the semiconductor wafer partition. The ratio of the total number of semiconductor chips with a coating layer was investigated. Then, regarding the splittability of the adhesive layer, when the ratio was 80% or more, it was evaluated as good, and when the ratio was less than 80%, it was evaluated as poor. The evaluation results are listed in Table 1.

[evaluation]
The dicing die bond films of Examples 1 to 4 gave good results in terms of frame retention and splittability in the cool expanding step (-15 ° C.). On the other hand, the dicing die bond film of Comparative Example 1 could not hold the ring frame in the adhesive layer because the tensile storage elastic modulus of the adhesive layer was too high. Therefore, the cool expanding step using the dicing die bond film of Comparative Example 1 could not be carried out. Further, in the dicing die bond film of Comparative Example 2, the tensile storage elastic modulus of the adhesive layer was too low, so that the adhesive layer could not be sufficiently split in the cool expand step.

X Dicing Die Bond Film 10 Dicing Tape 11 Base Material 11e Outer Edge 12 Adhesive Layer 12e Outer Edge 20, 21 Adhesive Layer 20e Outer Edge W, 30A, 30C Semiconductor Wafer 30B Semiconductor Wafer Divided Body 30a Divided Groove 30b Modification Region 31 Semiconductor chip

Claims (7)

A dicing tape having a laminated structure including a base material and an adhesive layer,
The dicing tape is provided with a pressure-sensitive adhesive layer that is removably adhered to the pressure-sensitive adhesive layer.
The adhesive layer has an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 ° C./min for the adhesive layer sample piece having a width of 10 mm and a thickness of 160 μm. The tensile storage elastic modulus at 25 ° C. measured under the conditions of 5 to 120 MPa is
The adhesive layer has an initial chuck distance of 10 mm, a frequency of 900 Hz, a dynamic strain of 0.005%, and a heating rate of 5 ° C./min for the adhesive layer sample piece having a width of 5 mm and a thickness of 80 μm. The tensile storage elastic modulus at -15 ° C measured in is 3000 to 6000 MPa , and
The adhesive layer is a dicing die bond film containing a polymer component having a weight average molecular weight of 800,000 to 2000,000 and a glass transition temperature of −10 to 3 ° C. The dicing die bond film according to claim 1, wherein the outer peripheral edge of the pressure-sensitive adhesive layer is within 1000 μm from the outer peripheral end of the pressure-sensitive adhesive layer in the in-plane direction of the film. The dicing die bond film according to claim 1 or 2, wherein the shear adhesive force of the adhesive layer with respect to the SUS plane at −15 ° C. is 66 N / cm ² or more. The dicing die bond film according to any one of claims 1 to 3, wherein the polymer component contains a constituent unit derived from acrylonitrile. The dicing die bond film according to any one of claims 1 to 4 , wherein the adhesive layer contains a silica filler in a proportion of 10 to 40% by mass. The pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer.
In the T-type peeling test under the conditions of 23 ° C. and a peeling speed of 300 mm / min, the peeling force between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer before radiation curing is 0.5 N / 20 mm or more. The dicing die bond film according to any one of claims 1 to 5 . The dicing die bond film according to any one of claims 1 to 6 , wherein the adhesive layer has a thickness of 7 to 30 μm.

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