CN107227123A - The manufacture method of diced chip bonding film and semiconductor device - Google Patents

The manufacture method of diced chip bonding film and semiconductor device Download PDF

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Publication number
CN107227123A
CN107227123A CN201710183427.3A CN201710183427A CN107227123A CN 107227123 A CN107227123 A CN 107227123A CN 201710183427 A CN201710183427 A CN 201710183427A CN 107227123 A CN107227123 A CN 107227123A
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China
Prior art keywords
bonding film
die bonding
cutting sheet
foregoing
peeling force
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CN201710183427.3A
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Chinese (zh)
Inventor
大西谦司
宍户雄郎
宍户雄一郎
木村雄大
福井章洋
杉村敏正
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Nitto Denko Corp
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Nitto Denko Corp
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Priority claimed from JP2017022100A external-priority patent/JP2017183705A/en
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of CN107227123A publication Critical patent/CN107227123A/en
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate
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    • C09J2433/00—Presence of (meth)acrylic polymer
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2475/00—Presence of polyurethane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
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Abstract

The present invention provides the manufacture method of diced chip bonding film and semiconductor device, the diced chip bonding film can suppress from cutting sheet to float in cooling extension process chips bonding film, and can be in pickup process from the semiconductor chip of cutting sheet suitably release band die bonding film.A kind of diced chip bonding film, has：Cutting sheet；With the die bonding film being layered in cutting sheet, peeling force A at 23 DEG C of cutting sheet and die bonding film is in more than 0.1N/20mm and below 0.25N/20mm scope, peeling force B at 15 DEG C of cutting sheet and die bonding film is under following peeling force B condition determination in more than 0.15N/20mm and below 0.5N/20mm scope, and die bonding film is used by applying tensile stress and being broken.

Description

The manufacture method of diced chip bonding film and semiconductor device
Technical field
The present invention relates to the manufacture method of diced chip bonding film and semiconductor device.
Background technology
In the past, in the manufacture of semiconductor device, sometimes using diced chip bonding film.Diced chip bonding film is Obtained from die bonding film is strippingly set in cutting sheet.In the manufacture of semiconductor device, connect in diced chip Semiconductor crystal wafer is kept on the die bonding film for closing film, semiconductor crystal wafer is cut and each chip is made.Then, Chip and die bonding film are together peeled off from cutting sheet, lead frame etc. is secured to by die bonding film and is glued Thing.
Using the diced chip bonding film that die bonding film is laminated with cutting sheet, and in die bonding film Keep during lower cutting semiconductor crystal wafer, it is necessary to which die bonding film and semiconductor crystal wafer are cut off simultaneously.But, using Buddha's warrior attendant In the common cutting method of stone blade, the hot influence that produces is caused during cutting die bonding film and cutting sheet can be worried Adhesion, the mutual fixation of semiconductor chip that causes of the generation of cutting swarf, cutting swarf be attached to semiconductor chip side etc., because This causes the rising of cost, it is necessary to reduce cut-off velocity.
Therefore, following method is proposed in recent years：Formed by irradiating laser to the pre-segmentation line in semiconductor crystal wafer Modification area, so that semiconductor crystal wafer can be along the easy Ground Split of pre-segmentation line, then by the way that the semiconductor crystal wafer is fitted in Diced chip bonding film, afterwards (for example, -15 DEG C~5 DEG C) extension (hereinafter also referred to as " cooling extends ") cutting at low temperature Die bonding film, so that semiconductor crystal wafer is broken with die bonding film, obtains each semiconductor chip (belt carcass chip bonding The semiconductor chip of film) (for example, with reference to patent document 1).This method is so-called, is referred to as stealthy cutting (Stealth Dicing, registration mark) method.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2009-164556 publications
The content of the invention
Problems to be solved by the invention
However, in conventional stealthy cutting, there are the following problems：To during being picked up after cooling extension, belt carcass The semiconductor chip of chip bonding film is peeled off from cutting sheet sometimes.On the other hand, there are following problems：In pickup, chip can not Peeled off from cutting sheet, there is situation about can not suitably pick up.
The present inventor etc. have made intensive studies for these problems, as a result find：Because cooling expands to the bar of low temperature Peeling force step-down between part, therefore cutting sheet and die bonding film, sometimes die bonding film float from cutting sheet, for The reason, the situation that the semiconductor chip for having the microarray strip bonding film before pickup is peeled off from cutting sheet.
In addition, pickup is carried out under normal temperature (for example, 23 DEG C).The present inventor etc. has found：Therefore, cutting sheet and core are being used In the case that peeling force between chip bonding film also compares high diced chip bonding film under cryogenic, in pickup When, peeling force becomes too high, for this reason, can not suitably pick up sometimes.
The present invention be in view of foregoing problems and make, its object is to provide a kind of diced chip bonding film, its energy It is enough to suppress from cutting sheet to float in cooling extension process chips bonding film, and can be suitable from cutting sheet in pickup process The semiconductor chip of suitable ground release band die bonding film.
In addition, it is an object of the invention to provide the manufacturer for the semiconductor device for having used the diced chip bonding film Method.
The solution used to solve the problem
The present inventor etc. are studied to solve foregoing problems for diced chip bonding film.The discovery of its result, By using the diced chip bonding film of following compositions, it can suppress to extend process chips bonding film from cutting in cooling Piece floats, and can in pickup process from the semiconductor chip of cutting sheet suitably release band die bonding film so that Complete the present invention.
That is, diced chip bonding film of the invention is characterised by having：
Cutting sheet；With
The die bonding film in foregoing cutting sheet is layered in,
The condition determination of peeling force A at 23 DEG C of foregoing cutting sheet and foregoing die bonding film in following peeling force A Down in more than 0.1N/20mm and below 0.25N/20mm scope,
The condition determination of peeling force B at -15 DEG C of foregoing cutting sheet and foregoing die bonding film in following peeling force B Down in more than 0.15N/20mm and below 0.5N/20mm scope,
Foregoing die bonding film is used by applying tensile stress and being broken.
＜ peeling forces A condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes
＜ peeling forces B condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes.
Constituted according to foregoing, foregoing peeling force A under foregoing peeling force A condition determination in more than 0.1N/20mm and In below 0.25N/20mm scope, therefore, it is possible in pickup process from cutting sheet suitably release band die bonding film Semiconductor chip.In addition, foregoing peeling force B is in more than 0.15N/20mm and 0.5N/ under foregoing peeling force B condition determination In below 20mm scope, therefore, it is possible to suppress from cutting sheet to float in cooling extension process chips bonding film.
In addition, the manufacture method of the semiconductor device of the present invention is characterised by, including following process：
Process A, the laminated semiconductor wafer on diced chip bonding film；
Process B, below 0 DEG C under conditions of, extend foregoing diced chip bonding film, at least make foregoing chip engagement thin Film is broken, and obtains the chip of microarray strip bonding film；With
Process C, picks up the chip of aforementioned strip die bonding film,
Foregoing diced chip bonding film has：
Cutting sheet；With
The die bonding film in foregoing cutting sheet is layered in,
The condition determination of peeling force A at 23 DEG C of foregoing cutting sheet and foregoing die bonding film in following peeling force A Down in more than 0.1N/20mm and below 0.25N/20mm scope,
The condition determination of peeling force B at -15 DEG C of foregoing cutting sheet and foregoing die bonding film in following peeling force B Down in more than 0.15N/20mm and below 0.5N/20mm scope.
＜ peeling forces A condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes
＜ peeling forces B condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes.
Constituted according to foregoing, foregoing peeling force A under foregoing peeling force A condition determination in more than 0.1N/20mm and In below 0.25N/20mm scope, connect therefore, it is possible to suitably peel off microarray strip from cutting sheet in process C (pickup process) Close the semiconductor chip of film.In addition, foregoing peeling force B under foregoing peeling force B condition determination in 0.15N/20mm with In upper and below 0.5N/20mm scope, therefore, it is possible to suppress process B (cooling extension process) chips bonding film from Cutting sheet floats.
It should be noted that in the manufacture method of the semiconductor device of the present invention, including following situation：Make semiconductor crystal wafer Situation about being split simultaneously in cooling extension process interruption with die bonding film；Only make die bonding film in cooling extension process The situation of fracture.
The effect of invention
According to the present invention it is possible to provide diced chip bonding film, it can suppress to connect in cooling extension process chips Film is closed from cutting sheet to float, and can from cutting sheet, suitably release band die bonding film is partly led in pickup process Body chip.Furthermore it is possible to provide the manufacture method for the semiconductor device for having used the diced chip bonding film.
Brief description of the drawings
Fig. 1 is the schematic cross-section for the diced chip bonding film for showing an embodiment of the invention.
Fig. 2 is the schematic cross-section for illustrating the manufacture method of the semiconductor device of present embodiment.
Fig. 3 is the schematic cross-section for illustrating the manufacture method of the semiconductor device of present embodiment.
Fig. 4 (a), (b) is the schematic cross-section for illustrating the manufacture method of the semiconductor device of present embodiment.
Fig. 5 is the schematic cross-section for illustrating the manufacture method of the semiconductor device of present embodiment.
Fig. 6 (a) and (b) is for illustrating that the section of the manufacture method of the semiconductor device of another embodiment is illustrated Figure.
Fig. 7 is the schematic cross-section for illustrating another manufacture method of the semiconductor device of another embodiment.
Description of reference numerals
1 base material
2 adhesive phases
3 die bonding films
4 semiconductor crystal wafers
5 semiconductor chips
6 adherends
7 bonding wires
8 potting resins
10 diced chip bonding films
11 cutting sheets
Embodiment
(diced chip bonding film)
The diced chip bonding film of an embodiment of the invention is illustrated below.Fig. 1 is to show the present invention An embodiment diced chip bonding film schematic cross-section.
As shown in figure 1, diced chip bonding film 10 has the structure that die bonding film 3 is laminated with cutting sheet 11 Into.Cutting sheet 11 has the composition that adhesive phase 2 is laminated with base material 1.Die bonding film 3 is arranged on adhesive phase 2.
It should be noted that in present embodiment, to there is the part not covered by die bonding film 3 in cutting sheet 11 2b situation is illustrated, but the diced chip bonding film of the present invention is not limited to this example, also can be according to covering cutting sheet Overall mode is laminated die bonding film in cutting sheet.
Cutting sheet 11 is in the peeling force A at 23 DEG C of die bonding film 3 under following peeling force A condition determination In more than 0.1N/20mm and below 0.25N/20mm scope, more than 0.12N/20mm and below 0.23N/20mm are preferably in In the range of, in the scope for being more preferably in more than 0.14N/20mm and below 0.22N/20mm.
＜ peeling forces A condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes
Foregoing peeling force A is in more than 0.1N/20mm and below 0.25N/20mm under foregoing peeling force A condition determination In the range of, therefore, it is possible to the semiconductor chip in pickup process from the suitably release band die bonding film 3 of cutting sheet 11 5 (referring to Fig. 4 (b)).
Cutting sheet 11 is located with the peeling force B at -15 DEG C of die bonding film 3 under following peeling force B condition determination In in more than 0.15N/20mm and below 0.5N/20mm scope, be preferably in more than 0.20N/20mm and 0.45N/20mm with Under scope in, in the scope for being more preferably in more than 0.24N/20mm and below 0.40N/20mm.
＜ peeling forces B condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes
Foregoing peeling force B is in more than 0.15N/20mm and below 0.5N/20mm under foregoing peeling force B condition determination In the range of, therefore, it is possible to suppress from cutting sheet 11 to float in cooling extension process chips bonding film 3.
Foregoing peeling force B is preferably greater than foregoing peeling force A.When foregoing peeling force B is more than foregoing peeling force A, one can be entered Step suppresses from cutting sheet 11 to float in cooling extension process chips bonding film 3, and can be in pickup process from cutting The semiconductor chip 5 of the more appropriately release band die bonding film 3 of piece 11.
Foregoing peeling force A and foregoing peeling force B difference [(peeling force B)-(peeling force A)] be preferably 0.03N/20mm with On, more preferably more than 0.05N/20mm.In addition, foregoing poor [(peeling force B)-(peeling force A)] is more big more preferred, but it is, for example, Below 0.5N/20mm.
Foregoing peeling force A and foregoing peeling force B more detailed assay method use the method that embodiment is recorded.
(die bonding film)
The glass transition temperature (Tg) of die bonding film 3 is preferably less than 50 DEG C, more preferably less than 40 DEG C.Chip When the glass transition temperature (Tg) of bonding film 3 is less than 50 DEG C, can effectively show normal temperature and low temperature peeling force it Difference.In addition, the glass transition temperature (Tg) of die bonding film 3 is more low better, but from the viewpoint of pick, it is, for example, More than 0 DEG C.
The more detailed assay method of foregoing glass transition temperature (Tg) uses the method that embodiment is recorded.
Storage tensile modulus A at 23 DEG C of die bonding film 3 is preferably more than 5MPa and below 3000MPa, more excellent Elect more than 10MPa and below 1000MPa as., can be suitable in pickup process when foregoing storage tensile modulus A is more than 5MPa Pick up on ground.On the other hand, when foregoing storage tensile modulus A is below 3000MPa, it can prevent after cooling extension process to picking up Die bonding film 3 during process is taken to be peeled off from cutting sheet 11.
Storage tensile modulus B at -15 DEG C of die bonding film 3 is preferably more than 1GPa and below 10GPa, more preferably For more than 2GPa and below 5GPa.When foregoing storage tensile modulus B is more than 1GPa, die bonding film 3 extends work in cooling Suitably it is broken in sequence.On the other hand, when foregoing storage tensile modulus B is below 10GPa, it can suitably suppress to expand in cooling Exhibition process chips bonding film 3 floats from cutting sheet 11.
The ratio between foregoing storage tensile modulus A and foregoing storage tensile modulus B [(storage tensile modulus B)/(stretching energy storage moulds Measure A)] it is preferably more than 2, more preferably more than 30.It is foregoing than [(storage tensile modulus B)/(storage tensile modulus A)] be 2 with When upper, it can further suppress from cutting sheet 11 to float in cooling extension process chips bonding film 3, and can be in pickup From the semiconductor chip 5 of the more appropriately release band die bonding film 3 of cutting sheet 11 in process.In addition, foregoing than [(stretching storage Energy modulus B)/(storage tensile modulus A)] more big more preferred, but from the viewpoint of the balance of cutting off property and pick, be, for example, Less than 300.
Foregoing storage tensile modulus A and foregoing storage tensile modulus B more detailed assay method are recorded using embodiment Method.
Formed as shown in figure 1, the layer of die bonding film 3 constitutes to enumerate by the bond layer of individual layer.Need explanation , in this specification, individual layer refers to constitute the layer formed by same, including laminated multi-layer is constituted the layer formed and obtained by same The layer arrived.
But, the die bonding film in the present invention is not limited to the example.For example, different 2 kinds can be constituted for stacking Sandwich construction obtained from bond layer above.
As the material for constituting die bonding film 3, thermosetting resin can be enumerated.Alternatively, it is also possible to which heat is applied in combination Plastic resin and thermosetting resin.
As foregoing thermosetting resins, phenolic resin can be enumerated, amino resins, unsaturated polyester resin, epoxy resin, poly- Urethane resin, organic siliconresin, thermoset polyimide resin etc..These resins, which can be used alone or combine two or more, to be made With.The epoxy resin of ionic impurity particularly preferably containing less meeting corrosion resistant semiconductor element etc..In addition, being used as epoxy resin Curing agent, preferably phenolic resin.
As long as the epoxy resin that aforementioned epoxy resins are normally used as adhesive composite is just not particularly limited, for example may be used To use bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes Two officials such as type, phenol novolak type, ortho cresol novolak type, trihydroxy benzene methylmethane type, four (phenyl hydroxyl) ethane types Can epoxy resin, polyfunctional epoxy resin；Hydantoins type, triglycidyl group isocyanurate type, glycidic amine type etc. Epoxy resin.They can be used alone or in combination of two or more kinds.In these epoxy resin, particularly preferably phenolic aldehyde is clear Paint shaped epoxy resin, biphenyl type epoxy resin, trihydroxy benzene methylmethane type resin, four (phenyl hydroxyl) ethane type epoxy resin. Because, these epoxy resin are imbued with the reactivity with the phenolic resin as curing agent, and heat resistance etc. is excellent.
Foregoing phenolic resin works as the curing agent of aforementioned epoxy resins, for example, can enumerate phenol novolacs tree Fat, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, nonyl phenol novolaks tree It is the novolak phenolics such as fat, resol type phenol resin, poly- to polyoxy styrene such as oxygen styrene etc..They can be independent Using or combine two or more and use.In these phenolic resin, particularly preferred phenol resol resins, phenol aralkyl Resin.Because the connection reliability of semiconductor device can be improved.
For aforementioned epoxy resins and the compounding ratio of phenolic resin, for example, it is preferable that with relative to aforementioned epoxy tree The mode that the hydroxyl in the equivalent of epoxy radicals 1, phenolic resin in fat composition turns into 0.5~2.0 equivalent is compounded.More preferably 0.8 ~1.2 equivalents.That is, because, if outside aforementioned range, will not to carry out sufficiently solidification anti-for both compounding ratio Should, the characteristic of epoxy resin cured product becomes easy deterioration.
As aforementioned thermoplastic resin, can enumerate natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, Ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, poly- carbon The polyamides such as acid ester resin, thermoplastic polyimide resin, 6- nylon, 6,6- nylon, phenoxy resin, acrylic compounds tree The saturated polyester resin such as fat, PET, PBT, polyamide-imide resin or fluororesin etc..These thermoplastic resins can individually make With, or combine two or more and use.Among these thermoplastic resins, particularly preferred ionic impurity is few, heat resistance is high, can Ensure the acrylic resin of the reliability of semiconductor element.
As foregoing acrylic resin, be not particularly limited, can enumerate by with carbon number below 30, especially carbon number 4 The one kind or two or more polymer as composition of the ester of the acrylic or methacrylic acid of the alkyl of~18 straight or branched (acrylic copolymer) etc..As aforesaid alkyl, for example, it can enumerate methyl, ethyl, propyl group, isopropyl, normal-butyl, tertiary fourth Base, isobutyl group, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2- ethylhexyls, octyl group, iso-octyl, nonyl, isononyl, the last of the ten Heavenly stems Base, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or dodecyl etc..
Among aforesaid propylene acid resin, for improve cohesive force the reasons why, particularly preferred acrylic copolymer.As Aforesaid propylene acid copolymer, for example, can enumerate copolymer, the acrylic acid and third of ethyl acrylate and methyl methacrylate The copolymer of the copolymer of alkene nitrile, butyl acrylate and acrylonitrile.
In addition, as the other monomers for forming aforementioned polymer, being not particularly limited, for example, it can enumerate acrylic acid, first Base acrylic acid, carboxyethyl acrylates, acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid or crotonic acid or the like contain Carboxylic monomer；The anhydride monomers of maleic anhydride or itaconic anhydride or the like；(methyl) 2-Hydroxy ethyl acrylate, (methyl) third Olefin(e) acid -2- hydroxy propyl esters, (methyl) acrylic acid -4- hydroxybutyls, the own ester of (methyl) acrylic acid -6- hydroxyls, (methyl) acrylic acid - 8- hydroxyls monooctyl ester, (methyl) acrylic acid -10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid -12- hydroxylaurics ester or acrylic acid (4- hydroxyls Methylcyclohexyl)-methyl esters or the like hydroxyl monomer；Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamides -2- Methyl propane sulfonic acid, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester or (methyl) propane sulfonic acid etc. Etc monomer containing sulfonic group；Or the phosphorous acid-based monomers of 2- hydroxyethyl acryloyl phosphates or the like.
As the compounding ratio of foregoing thermosetting resins, as long as the meeting of die bonding film 3 when heating under prescribed conditions The degree of the function as heat curing-type is played, is just not particularly limited, it is overall relative to die bonding film 3, preferably 5~60 In the range of weight %, in the range of more preferably 10~50 weight %.
For die bonding film 3, wherein be during comprising 23 DEG C the epoxy resin of liquid, 23 DEG C when be liquid phenol Urea formaldehyde and the acrylic resin that glass transition temperature (Tg) is less than 50 DEG C, preferably their total content is relative to core Generally more than the 20 weight % of chip bonding film 3.Thus, it is possible to cutting sheet 11 and die bonding film 3 under improving low temperature Peeling force.
It should be noted that referring to for liquid at 23 DEG C, viscosity at 23 DEG C is less than 5000Pas.Aforementioned viscosity refers to The value determined using the model HAAKE RotoVISCO1 of Thermo Scientific company systems.
, can be with when making in the case where making the die bonding film 3 of the present invention in advance to be crosslinked to a certain degree The multi-functional compounds of the reaction such as functional group of molecule chain end of addition and polymer in advance are used as crosslinking agent.Thus, may be used To improve the adhesion properties under high temperature, the improvement of heat resistance is realized.
As aforementioned crosslinking agent, known crosslinking agent can be used.Especially, more preferably toluene di-isocyanate(TDI), Methyl diphenylene diisocyanate, PPDI, 1,5- naphthalene diisocyanates, the addition of polyalcohol and diisocyanate The polyisocyanate compounds such as thing.As the addition of crosslinking agent, relative to the parts by weight of aforementioned polymer 100, it is often preferred that 0.05~7 parts by weight.When the amount of crosslinking agent is more than 7 parts by weight, bonding force can be reduced, thus not preferred.On the other hand, it is less than During 0.05 parts by weight, cohesive force is not enough, thus not preferred.In addition, while containing such polyisocyanate compound, Can be as needed in the lump containing other multi-functional compounds such as epoxy resin.
In addition, can suitably be compounded filler according to its purposes in die bonding film 3.The compounding of filler can be assigned Electric conductivity, raising thermal conductivity, regulation elasticity modulus etc..As aforementioned filler, inorganic filler and organic filler can be enumerated, from raising From the viewpoint of the characteristics such as treatability, raising thermal conductivity, regulation melt viscosity, imparting thixotropy, preferably inorganic filler.As preceding Inorganic filler is stated, is not particularly limited, for example, can enumerate aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicates, silicon Sour magnesium, calcium oxide, magnesia, aluminum oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, noncrystalline titanium dioxide Silicon etc..They can be used alone or in combination of two or more kinds.From the viewpoint of thermal conductivity is improved, preferably aluminum oxide, nitridation Aluminium, boron nitride, crystalline silica, amorphous silica.In addition, from the viewpoint of the balance of above-mentioned each characteristic is good, Preferred crystal silica or amorphous silica.In addition, for assigning electric conductivity, improving the purposes such as thermal conductivity, being used as nothing Machine filler, can also use conductive material (conductive filler).As conductive filler, it can enumerate silver, aluminium, gold, copper, nickel, lead The metal oxides such as spherical, needle-like, the metal powder of flakey, aluminum oxide, amorphous carbon black, graphite etc. is made in conductive alloy etc..
The average grain diameter of aforementioned filler is preferably 0.005~10 μm, more preferably 0.005~1 μm.Because, pass through The average grain diameter for making aforementioned filler is more than 0.005 μm, and wetability and cementability for adherend can be made good.In addition, By being less than 10 μm, the effect of filler added to assign above-mentioned each characteristic can be made fully, and can be true Protect heat resistance.It should be noted that the average grain diameter of filler is, for example, particle size distribution meter (HORIBA systems, the dress using luminosity formula Put name；LA-910 the value) tried to achieve.
It should be noted that in die bonding film 3, can also be as suitably desired in addition to aforementioned filler It is compounded other additives.As other additives, such as can enumerate fire retardant, silane coupler or ion trap agent.Make For foregoing flame retardants, such as can enumerate antimony trioxide, antimony pentaoxide, brominated epoxy resin.They can be used alone or Two or more is combined to use.As aforementioned silane coupling agent, for example, it can enumerate β-(3,4- epoxycyclohexyl) ethyl trimethoxy Silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silane etc..These are changed Compound can be used alone or in combination of two or more kinds.As foregoing ion capturing agent, for example, it can enumerate hydrotalcite, hydrogen Bismuth oxide etc..They can be used alone or in combination of two or more kinds.
The thickness (being gross thickness in the case of layered product) of die bonding film 3 is not particularly limited, for example can be from 1 ~200 μm of scope selection, preferably 5~100 μm, more preferably 10~80 μm.
(cutting sheet)
The cutting sheet 11 of present embodiment has the composition that adhesive phase 2 is laminated with base material 1.But, for this hair Cutting sheet in bright, as long as enabling die bonding film 3 be broken in cooling extension process, fixed chip connects during singualtion Film 3 is closed, the example is just not limited to.For example, can have other layers between base material and adhesive phase.
(base material)
Base material 1 preferably has UV transmissive, the strength substrate as diced chip bonding film 10.It can such as lift Go out：Low density polyethylene (LDPE), straight chain shaped polyethylene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, it is random altogether The polyolefin such as poly- polypropylene, block copolymerization polypropylene, HOPP, polybutene, polymethylpentene, ethylene-vinyl acetate Copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate (random, alternating) copolymerization Thing, ethylene-butene copolymer, ethylene-hexene co-polymers, polyurethane, polyethylene terephthalate, poly- naphthalenedicarboxylic acid second two The polyester such as alcohol ester, makrolon, polyimides, polyether-ether-ketone, polyimides, PEI, polyamide, all aromatic polyamides Amine, polyphenylene sulfide, aramid fiber (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulosic resin, have Machine silicones, metal (paper tinsel), paper etc..
In addition, as the material of base material 1, the polymer such as the crosslinked of aforementioned resin can be enumerated.Foregoing plastics film can Used with non-stretched, can also be as needed using the plastic sheeting for implementing stretch processing uniaxially or biaxially.Utilize The resin sheet of heat-shrinkable is imparted by stretch processing etc., by making the semiconductor crystal wafer of base material 1 after cooling extension Outer peripheral portion thermal contraction (heating extension), can be with so that the mutual interval of the semiconductor chip 5 of expansion bands die bonding film 3 Realize the facilitation of the recovery of semiconductor chip 5.
In order to improve with adjacent adaptation, the retentivity of layer etc., the surface of base material 1 can implement at usual surface Reason, chemical treatment or thing such as chromic acid processing, ozone exposure, fire exposure, high-voltage electric shock exposure, the processing of ionizing irradiation line Reason processing；Utilize the coating process of silane coupling agent (such as adhesion substance described later).Base material 1 can be selected suitably using of the same race or not Base material of the same race, can be as needed using base material obtained from blending several materials.In addition, anti-quiet in order to be assigned to base material 1 Electrical property, can set the thickness formed by metal, alloy, their oxide etc. to be on base material 1Left and right The evaporation layer of conductive material.Base material 1 can be individual layer or multilayer of more than two kinds.
Tensile strength of the base material 1 at -15 DEG C during elongation 100% is preferably more than 10N/10mm, more preferably 12N/ More than 10mm.When tensile strength during -15 DEG C of elongation 100% of base material 1 is more than 10N/10mm, the power cut off is effective Ground is delivered to wafer segment, and realization is uniformly cut off.
The thickness of base material 1 is not particularly limited, and can suitably determine, but generally 5~200 μm or so.
(adhesive phase)
Storage tensile modulus A at 23 DEG C of adhesive phase 2 is preferably more than 1MPa and below 100MPa, more preferably More than 2MPa and below 30MPa.When foregoing storage tensile modulus A is more than 1MPa, can more appropriately it be picked up in pickup process Take the chip of microarray strip bonding film 3.On the other hand, when foregoing storage tensile modulus A is below 100MPa, work is extended in cooling To during pickup process after sequence, it can prevent die bonding film 3 from being peeled off from cutting sheet 11.
Storage tensile modulus B at -15 DEG C of adhesive phase 2 is preferably more than 5MPa and below 500MPa, more preferably More than 10MPa and below 200MPa.When foregoing storage tensile modulus B is more than 5MPa, the power cut off can be had when cutting off It is delivered to adhering film to effect.On the other hand, when foregoing storage tensile modulus B is below 500MPa, can suitably it suppress Cooling extension process chips bonding film 3 floats from cutting sheet 11.
The ratio between foregoing storage tensile modulus A and foregoing storage tensile modulus B [(storage tensile modulus B)/(stretching energy storage moulds Measure A)] it is preferably more than 2, more preferably more than 4.Foregoing is more than 2 than [(storage tensile modulus B)/(storage tensile modulus A)] When, it can further suppress from cutting sheet 11 to float in cooling extension process chips bonding film 3, and can be in pickup work From the semiconductor chip 5 of the more appropriately release band die bonding film 3 of cutting sheet 11 in sequence.In addition, foregoing than [(stretching energy storage Modulus B)/(storage tensile modulus A)] more big more preferred, but from the viewpoint of balance of the pickup with cutting off property, for example, 100 Below.
Foregoing storage tensile modulus A and foregoing storage tensile modulus B more detailed assay method are recorded using embodiment Method.
It is not particularly limited as adhesive used in the formation of adhesive phase 2, for example, acrylic compounds can be used to glue The common pressure-sensitive adhesive such as mixture, elastomeric adhesive.As foregoing pressure-sensitive adhesive, from semiconductor crystal wafer, glass Set out in terms of cleaning cleaning Deng organic solvents such as utilization ultra-pure water, the alcohol of electronic unit for being afraid of pollution, preferably with propylene The acrylic adhesives of polymer based on acids polymers.
As foregoing acrylic polymer, for example, it can enumerate：By (methyl) alkyl acrylate (such as methyl esters, second Ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- ethyl hexyls Ester, different monooctyl ester, nonyl ester, last of the ten Heavenly stems ester, isodecyl ester, hendecane base ester, dodecyl ester, tridecane base ester, tetradecane base ester, hexadecane The carbon number 1~30 of the alkyl such as base ester, stearyl, eicosane base ester, the especially straight-chain of carbon number 4~18 or branched Arrcostab etc.) and (methyl) acrylate base ester (such as ring pentyl ester, cyclohexyl) in it is one kind or two or more be used as it is single Acrylic polymer of body composition etc..It should be noted that (methyl) acrylate refers to acrylate and/or metering system Acid esters, all identical implications of (methyl) of the invention.
For purposes such as modified cohesive force, heat resistances, foregoing acrylic polymer can be included as needed to be corresponded to Can be with foregoing (methyl) alkyl acrylate or the unit of other monomer components of cycloalkyl ester copolymerization.It is used as such monomer Composition, for example, can enumerate：Acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid carboxyl penta The carboxyl group-containing monomers such as ester, itaconic acid, maleic acid, fumaric acid, crotonic acid；The anhydride monomers such as maleic anhydride, itaconic anhydride；(methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid -4- hydroxybutyls, (methyl) propylene The own ester of acid -6- hydroxyls, (methyl) acrylic acid -8- hydroxyls monooctyl ester, (methyl) acrylic acid -10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid - The hydroxyl monomers such as 12- hydroxylaurics ester, (methyl) acrylic acid (4- Hydroxymethyl-cyclo-hexyls) methyl esters；Styrene sulfonic acid, allyl Base sulfonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester, The monomers containing sulfonic group such as (methyl) propane sulfonic acid；The phosphorous acid-based monomers such as 2- hydroxyethyl acryloyl phosphates； Acrylamide, acrylonitrile etc..These monomer components for being capable of copolymerization can use one kind or two or more.These are capable of the list of copolymerization The consumption of body is preferably below the 40 weight % of whole monomer components.
And then, in order that foregoing acrylic crosslinked polymer, can also make comprising multi-functional monomer etc. as needed For comonomer composition.As such multi-functional monomer, for example, it can enumerate：Hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, (poly-) propane diols two (methyl) acrylate, neopentyl glycol two (methyl) acrylic acid Ester, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, amino first Acid esters (methyl) acrylate etc..These multi-functional monomers can also use one kind or two or more.In terms of adhesion characteristic Set out, the consumption of multi-functional monomer is preferably below the 30 weight % of whole monomer components.
Foregoing acrylic polymer can be obtained by polymerizeing single monomer or monomer mixture of more than two kinds. Polymerization can also be carried out with any-modes such as polymerisation in solution, emulsion polymerization, polymerisation in bulk, suspension polymerisations.From prevent to cleaning Adherend pollution in terms of set out, the content of preferably low molecular weight substance is few.From this starting point, acrylic polymer Number-average molecular weight be preferably more than 300,000, more preferably 400,000~3,000,000 or so.
In addition, in aforementioned adhesion agent, in order to which the number of acrylic polymer of polymer etc. based on improving is divided equally Son amount, can also suitably use external crosslinker.As the specific means of outside cross-linking method, it can include：Add polyisocyanate The so-called crosslinking agents such as cyanate esters, epoxide, aziridine cpd, melamine class crosslinking agent simultaneously react it Method.During using external crosslinker, its consumption is according to its balance with the base polymer to be crosslinked and then according to as viscous The use of mixture is suitably determined.It is usually preferable that relative to the parts by weight of aforementioned base polymer 100, being compounded 5 weight Part or so following and then 0.1~5 parts by weight.And then, as needed, can also in addition to aforesaid ingredients in adhesive Use the additives such as known various tackifier, age resistor.
Adhesive phase 2 can be formed using Radiation curing adhesive.In the state of die bonding film 3 of having fitted During lower irradiation ultraviolet radiation, anchoring effect can be produced between die bonding film 3.Thus, it is possible to improve low temperature (for example, -15 DEG C) under adhesive phase 2 and die bonding film 3 adaptation.
It should be noted that for the adaptation based on anchoring effect, temperature is lower, adaptation becomes higher.Even in Normal temperature (for example, 23 DEG C) also have anchoring effect, but at normal temperatures when low temperature compared with can not play based on the close of anchoring effect Conjunction property.As a result, peeling force B can be improved suitably, and reduce peeling force A.
As long as functional group of the Radiation curing adhesive with carbon-to-carbon double bond israds curability and display bonding Property, it is possible to it is not particularly limited to use.As Radiation curing adhesive, for example, it can exemplify in foregoing acrylic acid The monomer component, oligomeric of radiation curing is compounded with the common pressure-sensitive adhesive such as class adhesive, elastomeric adhesive The addition type Radiation curing adhesive of thing composition.
As the monomer component for the radiation curing being compounded, for example, it can enumerate：Oligourethane, amino Formic acid esters (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylic acid Ester, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) Acrylate, dipentaerythritol six (methyl) acrylate, 1,4- butanediols two (methyl) acrylate etc..In addition, radiation The oligomer composition of curability can be included：Carbamates, polyethers, polyesters, polycarbonate-based, polybutadiene etc. Various oligomer, its molecular weight is appropriate in the range of 100~30000 or so.It is the monomer component of radiation curing, low The compounding amount of polymers composition suitably can determine that adhesive phase bonding force can be reduced according to the species of aforementioned adhesion oxidant layer Amount.Generally, relative to the parts by weight of base polymer 100, for example, 5~500 weights such as the acrylic polymers for constituting adhesive Measure part, preferably 40~150 parts by weight or so.
In addition, as Radiation curing adhesive, except preceding description addition type Radiation curing adhesive it Outside, it can also include and use in polymer lateral chain or main chain or made in the polymer that main chain terminal has carbon-to-carbon double bond Based on polymer inherent type Radiation curing adhesive.Inherent type Radiation curing adhesive need not contain or not Containing more as oligomer composition of low molecular composition etc., thus oligomer composition etc. will not through when moved in adhesive middle It is dynamic, can the constitutionally stable adhesive phase of forming layer, so it is preferred that.
The foregoing base polymer with carbon-to-carbon double bond can be used without particular limitation has carbon-to-carbon double bond and tool Adhesive polymer.As such base polymer, the polymerization of basic framework is preferably used as using acrylic polymer Thing.As the basic framework of acrylic polymer, the acrylic polymer of foregoing illustration can be included.
The method that carbon-to-carbon double bond is imported into foregoing acrylic polymer is not particularly limited, can be used various Method, it is easy in terms of MOLECULE DESIGN that carbon-to-carbon double bond imports polymer lateral chain.Following method can for example be included：Make acrylic acid Birdsing of the same feather flock together compound can be double with the functional group of the functional group reactionses and carbon-to-carbon with after the monomer copolymerization with functional group, making to have The compound of key condensation or progress addition reaction in the state of the radiation curing of carbon-to-carbon double bond is maintained.
As the example of the combination of these functional groups, carboxylic acid group and epoxy radicals, carboxylic acid group and '-aziridino, hydroxyl can be included Base and NCO etc..Among the combination of these functional groups, from the easy degree of following response, hydroxyl and isocyanates The combination of base is suitable.As long as in addition, the foregoing propylene with carbon-to-carbon double bond is generated by the combination of these functional groups Acids polymers are such to be combined, then functional group can be located at the either side in acrylic polymer and aforesaid compound, but In foregoing preferred compositions, acrylic polymer has hydroxyl and aforesaid compound has a case that NCO is suitable Suitable.Now, as the isocyanate compound with carbon-to-carbon double bond, for example, it can include：Methylacryloyl isocyanic acid Ester, 2- methacryloxyethyls isocyanates, an isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate etc..In addition, conduct Acrylic polymer, can be used the hydroxyl monomer of foregoing illustration, 2- hydroxyethyl vinyl ethers, 4- hydroxybutyl second The polymer of the copolymerization such as alkene ether, the ether compound of diethylene glycol monovinyl base ether.
Foregoing inherent type Radiation curing adhesive can be used alone the foregoing base polymer with carbon-to-carbon double bond (especially acrylic polymer), can also be compounded the list of aforementioned radiation line curability under the degree that will not deteriorate characteristic Body composition, oligomer composition.Oligomer composition of radiation curing etc. is commonly angled relative to the parts by weight of base polymer 100 30 In the range of parts by weight, preferably in the range of 0~10 parts by weight.
Aforementioned radiation line curing adhesive contains Photoepolymerizationinitiater initiater when being solidified using ultraviolet etc..It is used as light Polymerization initiator, for example, can include：4- (2- hydroxyl-oxethyls) phenyl (2- hydroxyl -2- propyl group) ketone, Alpha-hydroxy-α, α '-two The α -one alcohol compounds such as methyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparations, 1- hydroxycyclohexylphenylketones；Methoxybenzene second Ketone, 2,2- dimethoxy -2- phenyl acetophenones, 2,2- diethoxy acetophenones, 2- methyl isophthalic acids-[4- (methyl mercapto)-phenyl] -2- The acetophenone compounds such as morpholino propane -1- ketone；Benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether etc. Benzoin ethers compound；The ketal compounds such as benzil dimethyl ketal；The aromatic sulfonyl class such as 2- naphthalene sulfonyl chlorides Compound；The photolytic activity oxime compounds such as 1- phenyl -1,1- propanedione -2- (o- ethoxy carbonyls) oxime；Benzophenone, benzoyl The benzophenone compounds such as benzoic acid, 3,3 '-dimethyl -4- methoxy benzophenones；Thioxanthones, 2- chloro thioxanthones, 2- Methyl thioxanthene copper, 2,4- dimethyl thioxanthones, isopropyl thioxanthone, 2,4- dichloro-s thioxanthones, 2,4- diethyl thioxanthones, 2, The thioxanthene ketone class compound such as 4- diisopropylthioxanthones；Camphorquinone；Halogenated ketone；Acylphosphine oxide；Acyl phosphonate etc..Photopolymerization The compounding amount of initiator is, for example, relative to the parts by weight of base polymer 100 such as acrylic polymer for constituting adhesive 0.05~20 parts by weight or so.
In addition, as Radiation curing adhesive, such as can include：In Japanese Unexamined Patent Application 60-196956 publications The light such as alkoxy silane disclosed, containing the addition polymerization compound with more than 2 unsaturated bonds, with epoxy radicals gather The Photoepolymerizationinitiater initiater such as conjunction property compound and carbonyls, organosulfur compound, peroxide, amine, salt compounds Rubber adhesive, acrylic adhesives etc..
The thickness of adhesive phase 2 is not particularly limited, and consolidates from the breach of chip section, die bonding film 3 is prevented Surely set out in terms of having concurrently the property kept, preferably 1~50 μm or so, more preferably 2~30 μm, further preferred 5~25 μm.
The die bonding film 3 of foregoing diced chip bonding film 10 is protected (not shown) preferably by barrier film. Barrier film has the function of the protection materials as protection die bonding film 3 before for practicality.In addition, barrier film may be used also To be used as supporting base material when transferring die bonding film 3 to adhesive phase 2.Barrier film is to diced chip bonding film Die bonding film 3 on fit workpiece when be stripped.As barrier film, it can also use by polyethylene terephthalate The removers such as ester (PET), polyethylene, polypropylene, fluorine class remover, chain alkyl esters of acrylic acid remover have carried out surface painting Plastic sheeting, paper of cloth etc..
The diced chip bonding film 10 of present embodiment for example can operate to make as follows.
First, base material 1 can be film-made using known film-forming method.As the film-forming method, for example, it can illustrate Roll film method, the tape casting in organic solvent, the inflation extrusion molding in enclosed system, T die extrusion process, coextrusion Method, dry lamination method etc..
Then, on base material 1 coating adhesive composition solution and after forming coated film, make the coated film in rated condition Lower drying (making its heat cross-linking as needed), forms precursor layer.It is not particularly limited, for example, can includes as coating method Roll coating, screen-printing deposition, rotogravure application etc..In addition, as drying condition, such as in 80~150 DEG C of drying temperature, drying Carried out in the range of 0.5~5 minute time.After the coating adhesive composition formation coated film on barrier film, Coated film is dried with aforementioned drying condition, foregoing precursor layer is formed.Afterwards, foregoing precursor layer is fitted in together with barrier film On base material 1.Thus cutting sheet precursor is made.
Die bonding film 3 for example can operate to make as follows.
First, the adhesive composite solution of the formation material as die bonding film 3 is made.In bonding agent combination In thing solution, as it was previously stated, compounded with foregoing adhesive composite, filler, other various additives etc..
Then, adhesive composite solution is coated in the way of as specific thickness on base material barrier film, is formed and applied After cloth film, the coated film is dried under prescribed conditions, form die bonding film 3.As coating method, do not limit especially It is fixed, such as can include roll coating, screen-printing deposition, rotogravure application.In addition, as drying condition, such as drying temperature Carried out in the range of 70~160 DEG C of degree, 1~5 minute drying time.Alternatively, it is also possible on barrier film coating adhesive combine Thing solution and formed after coated film, dry coated film with aforementioned drying condition, formed die bonding film 3.Afterwards, by chip Bonding film 3 is fitted in together with barrier film on base material barrier film.
Then, barrier film is peeled off respectively from foregoing cutting sheet precursor and die bonding film 3, so that die bonding film 3 The mode for turning into binding face with adhesive phase is fitted both.Laminating can for example be carried out by crimping.Now, to layer Pressure temperature is not particularly limited, such as preferably 30~50 DEG C, more preferably 35~45 DEG C.In addition, not limiting especially line pressure It is fixed, such as preferably 0.1~20kgf/cm, more preferably 1~10kgf/cm.Afterwards, can be from the side irradiation ultraviolet radiation of base material 1. As ultraviolet irradiation amount, foregoing peeling force A and foregoing peeling force B is preferably set to turn into the amount in the range of aforementioned value.Tool The ultraviolet irradiation amount of body different, such as preferably 50mJ~500mJ according to composition, thickness of adhesive phase etc., more preferably For 100mJ~300mJ.Thus, it is possible to obtain the diced chip bonding film of present embodiment.
(preparation method of semiconductor device)
Then, 2~Fig. 7 of one side reference picture, while for the system of the semiconductor device using diced chip bonding film 10 The method of making is illustrated.Fig. 2~Fig. 5 is that the section of a manufacture method of the semiconductor device for illustrating present embodiment shows It is intended to.First, laser is irradiated to the pre-segmentation line 4L of semiconductor crystal wafer 4 and forms modification area on pre-segmentation line 4L.We Method is following method：Focal point is directed at the inside of semiconductor crystal wafer and irradiate laser along the pre-segmentation line of clathrate, lead to The ablation that Multiphoton Absorbtion is caused is crossed, modification area is internally formed in semiconductor crystal wafer.As laser irradiation condition, following Condition in the range of appropriate adjustment.
＜ laser irradiation conditions ＞
(A) laser
(B) optically focused lens
Below 100 times of multiplying power
NA 0.55
To the transmitance of optical maser wavelength below 100%
(C) translational speed 280mm/ second of the mounting table of mounting semiconductor substrate is below
It should be noted that the method for modification area is formed on pre-segmentation line 4L on irradiation laser, due in day No. 3408805 publication of this patent, Japanese Unexamined Patent Publication 2003-338567 publications are described in detail, therefore omit herein Describe in detail.
Then, as shown in figure 3, crimping the semiconductor crystal wafer 4 after modification area is formed on die bonding film 3, it is made Bonding is kept and fixed (fixed work order).This process by the pressing such as crimping roller means while pressed while carrying out.To installing When attaching temperature be not particularly limited, in the range of preferably 40~80 DEG C.Because, it can effectively prevent semiconductor The warpage of wafer 4, and the flexible influence of diced chip bonding film can be reduced.
Then, by applying tensile stress to diced chip bonding film 10, semiconductor crystal wafer 4 and die bonding film are made 3 in pre-segmentation line 4L fractures, form semiconductor chip 5 (cooling extension process).Commercially available crystalline substance can be for example used in this process Circle expanding unit.Specifically, as shown in Fig. 4 (a), it is being fitted with the diced chip bonding film 10 of semiconductor crystal wafer 4 The periphery of adhesive phase 2 is attached after cut ring 31, is fixed on wafer expanding unit 32.Then, as shown in Fig. 4 (b), jack-up is made Portion 33 rises, and tension force is applied to diced chip bonding film 12.
Foregoing cooling extension process is carried out preferably under conditions of 0~-15 DEG C, more preferably under conditions of -5~-15 DEG C Carry out.Because foregoing cooling extension process is carried out under conditions of 0~-15 DEG C, therefore it can suitably make die bonding film 3 Fracture.
In addition, in foregoing cooling extension process, expansion rate (speed that jacking part rises) is preferably 100~400mm/ Second, more preferably 100~350mm/ seconds, more preferably 100~300mm/ seconds.If make expansion rate for 100mm/ seconds with On, then it can easily make semiconductor crystal wafer 4 and die bonding film 3 substantially simultaneously be broken.In addition, if making the expansion rate be 400mm/ seconds following, then cutting sheet 11 can be prevented to be broken.
In addition, in foregoing cooling extension process, propagation is preferably 4~16mm of propagation.Previous extension amount can root Suitably adjusted in the range of aforementioned value according to the chip size of formation.If it is more than 4mm to make propagation, semiconductor can be made The fracture of wafer 4 and die bonding film 3 is easier.In addition, if making propagation be below 16mm, then can further it prevent Cutting sheet 11 is broken.
In this way, by applying tensile stress to diced chip bonding film 10, can be with the modification area of semiconductor crystal wafer 4 As starting point, cracked on the thickness direction for making semiconductor crystal wafer 4, while the chip closely sealed with semiconductor crystal wafer 4 can be made Bonding film 3 is broken, and can obtain the semiconductor chip 5 of microarray strip bonding film 3.
Then, heating extension process is carried out as needed.In heating extension process, the ratio of cutting sheet 11 is pasted with and partly led The part of the part of body wafer 4 in the outer part, which carries out heating, makes its thermal contraction.Thus, the mutual interval of extension semiconductor chip 5.Plus Condition in thermal expansion exhibition process is not particularly limited, and is preferably：4~16mm of propagation, 200~260 DEG C of heating-up temperature, heat away from In the range of 2~30mm, 3 °s/sec~10 °s/sec of rotary speed.
Then, cleaning process is carried out as needed.In cleaning process, the semiconductor of microarray strip bonding film 3 will be fixed with The cutting sheet 11 of the state of chip 5 is arranged at spinner.Then, while cleaning fluid is added dropwise while making spin coating to semiconductor chip 5 Device rotates.Thus, the surface of semiconductor chip 5 is cleaned.As cleaning fluid, for example, it can enumerate water.The rotary speed of spinner, Rotational time is different according to species of cleaning fluid etc., can for example be set to 400~3000rpm of rotary speed, rotational time 1~ 5 minutes.
Then, in order to which the semiconductor chip being adhesively fixed on diced chip bonding film 10 5 is peeled off, semiconductor is carried out The pickup (pickup process) of chip 5.It is not particularly limited as the method for pickup, known various methods can be used. It can such as include：With pin from the side of diced chip bonding film 10 by each jack-up of semiconductor chip 5, and picked up using pick device Take by method of semiconductor chip 5 of jack-up etc..
Then, as shown in figure 5, the semiconductor chip 5 of pickup is engaged in into adherend 6 via the chip of die bonding film 3 (interim fixed work order).As adherend 6, lead frame, TAB films, substrate or the semiconductor chip made in addition can be enumerated Deng.Adherend 6 for example can be to be easily deformed such deformation type adherend, or the difficult non-deformed type of deformation is glued Thing (semiconductor crystal wafer etc.).
As aforesaid base plate, known substrate can be used.In addition, as foregoing lead frame, Cu can be used to draw The die-attach areas such as wire frame, 42 alloy lead wire frames, by glass epoxy resin, BT (bismaleimide-triazine), polyimides etc. The organic substrate of formation.But, the present invention is not limited to this, in addition to semiconductor element can be adhesively fixed and and semiconductor The circuit substrate that element is electrically connected and used.
Die bonding film 3 it is interim fixed when 25 DEG C at shear bond power be preferably relative to adherend 6 More than 0.2MPa, more preferably 0.2~10MPa.When the shear bond power of die bonding film 3 is at least more than 0.2MPa, During wire bonding sequence, due to the ultrasonic activation in the process, heating and in die bonding film 3 and semiconductor chip 5 or The situation that the bonding plane of adherend 6 produces detrusion is few.Ultrasonic activation when i.e., due to wire bonding and cause semiconductor The situation of element movement is few, thus, it is possible to prevent the success rate of wire bonding from reducing.In addition, the interim fixation of die bonding film 3 When 175 DEG C at shear bond power relative to adherend 6 be preferably more than 0.01MPa, more preferably 0.01~5MPa.
Then, enter to be about to the front end of the portion of terminal (inner lead) of adherend 6 and the electrode pad on semiconductor chip 5 The wire bonding (wire bonding sequence) that (not shown) is electrically connected with bonding wire 7.As foregoing bonding wire 7, for example Gold thread, aluminum steel or copper cash etc. can be used.On carry out wire bonding when temperature, can 80~250 DEG C, preferably 80~ Carried out in the range of 220 DEG C.Carried out in addition, being that several seconds~several minutes are lower in its heat time.Line connection can be before being heated into By making by the vibrational energy based on ultrasonic wave and based on the crimping energy combination for applying pressurization in the state of stating in temperature range For carry out.This process can be carried out without the heat cure of die bonding film 3.In addition, during this process, by In die bonding film 3, together with semiconductor chip 5 is not affixed to adherend 6.
Then, using potting resin 8 come packaged semiconductor 5 (packaging process).This process is equipped on to protect Semiconductor chip 5, the bonding wire 7 of adherend 6 and carry out.This process can by using mould by the resin of encapsulation into Type is carried out.As potting resin 8, such as using the resin of epoxies.Heating-up temperature during resin-encapsulated is generally at 175 DEG C Carry out 60~90 seconds, but the present invention is not limited to this, for example, can solidify at 165~185 DEG C several minutes.Thus, envelope is made Fill resin solidification and clipping die bonding film 3 makes semiconductor chip 5 be fixed with adherend 6.That is, in the present invention, even in In the case of without solidify afterwards process described later, it can be also fixed in this process using die bonding film 3, can Help to reduce manufacturing process's number and shorten the manufacturing cycle of semiconductor device.
In foregoing solidify afterwards process, potting resin 8 not sufficiently cured in aforementioned encapsulation process is fully cured.Even if In the case of the incomplete heat cure of packaging process chips bonding film 3, can also be realized in this process makes chip engagement thin Film 3 and the together complete heat cure of potting resin 8.Heating-up temperature in this process is different because of the species of potting resin, and for example, 165 In the range of~185 DEG C, the heat time is 0.5~8 hour or so.
It is laggard to the semiconductor chip 5 of microarray strip bonding film 3 is temporarily fixed on into adherend 6 in above-mentioned embodiment Line lead bond sequence is without being illustrated the situation of the complete heat cure of die bonding film 3.However, in the present invention, Common chip bonding process can be carried out, i.e. glued the semiconductor chip 5 of microarray strip bonding film 3 is temporarily anchored to After on thing 6, make the heat cure of die bonding film 3, then carry out wire bonding sequence.
It should be noted that the diced chip bonding film of the present invention carries out three-dimensional multiple semiconductor chips are laminated Can also suitably it be used in the case of installation.At this point it is possible between semiconductor chip stacked die bonding film and interval Thing, can also between semiconductor chip only stacked die bonding film without be laminated sept, can according to manufacturing condition, use Suitably changed on way etc..
Then, the process that back side grinding is carried out after groove is formed on the surface of semiconductor crystal wafer partly lead below for employing The manufacture method of body device is illustrated.
Fig. 6, Fig. 7 are the schematic cross-section of another manufacture method of the semiconductor device for illustrating present embodiment.It is first First, shown in such as Fig. 6 (a), formed with rotating blade 41 on the surface 4F of semiconductor crystal wafer 4 without the groove for reaching back side 4R 4S.It should be noted that in groove 4S formation, semiconductor crystal wafer 4 is supported with supporting base material (not shown).Groove 4S depth Degree can be appropriately configured according to the thickness of semiconductor crystal wafer 4, the condition of extension.Then, as shown in Fig. 6 (b), with surface The mode that 4F is abutted makes semiconductor crystal wafer 4 be supported by protection base material 42.Afterwards, back side grinding is carried out with grinding grinding stone 45, from the back of the body Face 4R shows groove 4S.It should be noted that it is known to protect base material 42 to be used to the attaching of semiconductor crystal wafer Adhering device, back side grinding can also use known grinding attachment.
Then, as shown in fig. 7, crimping the semiconductor crystal wafer 4 for showing groove 4S on diced chip bonding film 10, it is made Bonding is kept and fixed (interim fixed work order).Afterwards, protection base material 42 is peeled off, using wafer expanding unit 32 to diced chip Bonding film 10 applies tension force.Thus, it is broken die bonding film 3, forms semiconductor chip 5 (chip formation process).Need It is noted that the temperature, expansion rate, propagation in chip formation process are formed with irradiating laser on pre-segmentation line 4L The situation of modification area is same.Later process and the situation irradiated laser and modification area is formed on pre-segmentation line 4L are same Sample, therefore omit explanation herein.
As long as the manufacture method of the semiconductor device of the present invention makes semiconductor crystal wafer and die bonding film simultaneously in cooling Extension process interruption is split or die bonding film is split in cooling extension process interruption, is just not limited to above-mentioned embodiment. As other embodiment, such as shown in Fig. 6 (a), the surface 4F formation with rotating blade 41 in semiconductor crystal wafer 4 is not arrived Up to after back side 4R groove 4S, crimping shows groove 4S semiconductor crystal wafer 4 on diced chip bonding film, keeps its bonding And it is fixed (interim fixed work order).Afterwards, tension force is applied to diced chip bonding film using wafer expanding unit.Thus, may be used Semiconductor crystal wafer 4 and die bonding film 3 are broken with the part in groove 4S, semiconductor chip 5 is formed.
Embodiment
Hereinafter, using embodiment, the present invention is described in detail, but the present invention is not limited then as long as no beyond its purport Due to following embodiment.In addition, in each example, as long as no special record, then part each means weight basis.
(embodiment 1)
The making ＞ of ＜ cutting sheets
Acrylic acid-2-ethyl is put into the reaction vessel for possessing cooling tube, nitrogen ingress pipe, thermometer and agitating device Own 100 parts of ester (hereinafter also referred to as " 2EHA "), 19 parts of 2-Hydroxy ethyl acrylate (hereinafter also referred to " HEA "), benzoyl peroxide 80 parts of 0.4 part of formyl and toluene, carry out the processing of polymerization in 10 hours in 60 DEG C in stream of nitrogen gas, obtain acrylic polymer A。
2- methacryloxyethyls isocyanates is added in acrylic polymer A (hereinafter also referred to " MOI ") 1.2 parts, the processing of addition reaction in 60 hours is carried out in 50 DEG C in air draught, acrylic polymer A ' is obtained.
Then, relative to 100 parts of acrylic polymer A ', polyisocyanate compound (trade name " CORONATE is added L ", Japanese polyurethane Co. Ltd. system) 1.3 parts and Photoepolymerizationinitiater initiater (trade name " IRGACURE 184 ", Ciba Specialty Chemicals Inc. systems) 3 parts, make binder solution (also referred to as " binder solution A ").
The binder solution A of foregoing preparation is coated on the face for implementing organosilicon processing of PET release liners, Heat drying 2 minutes at 120 DEG C, form the adhesive phase A of 10 μm of thickness.Then, in adhesive phase A exposed surface coating thickness 115 μm of GUNZE LIMITED eva films (ethylene vinyl acetate copolymer film), are preserved 72 hours at 23 DEG C, Obtain cutting sheet A.
The making ＞ of ＜ die bonding films
Following (a)~(d) is dissolved in methyl ethyl ketone, obtain the weight % of solid component concentration 20 adhesive composite Solution A.
(a) (trade name " SG-708-6 " Nagase ChemteX Corporation systems, vitrifying turn acrylic resin Temperature (Tg)：4℃)：100 parts
(b) epoxy resin (trade name " JER828 " Mitsubishi chemical Co., Ltd system is liquid at 23 DEG C)：11 parts
(c) phenolic resin (trade name " MEH-7851ss " is bright and chemical conversion Co. Ltd. system, at 23 DEG C be solid)：5 parts
(d) spherical silicon dioxide (trade name " SO-25R " Admatechs Co., Ltd. system)：110 parts
Adhesive composite solution A is coated on to the thickness for having carried out silicone release processing for 50 μm by gathering to benzene two On the demoulding processing film (release liner) of formic acid glycol ester film formation, then dried 2 minutes at 130 DEG C.Thus make Make the die bonding film A of 10 μm of thickness (average thickness).
The making ＞ of ＜ diced chip bonding films
PET release liners are peeled off from cutting sheet A, fit die bonding film A on the adhesive phase exposed.Laminating is used Hand pressure roller.Then, 300mJ ultraviolet is irradiated from cutting sheet side.Thus, diced chip bonding film A is obtained.
(embodiment 2)
The making ＞ of ＜ die bonding films
Following (a)~(e) is dissolved in methyl ethyl ketone, obtain the weight % of solid component concentration 20 adhesive composite Solution B.
(a) (trade name " SG-708-6 " Nagase ChemteX Corporation systems, vitrifying turn acrylic resin Temperature (Tg)：4℃)：100 parts
(b) epoxy resin (trade name " JER1010 " Mitsubishi chemical Co., Ltd system, at 23 DEG C be solid)：140 parts
(c) epoxy resin (trade name " JER828 " Mitsubishi chemical Co., Ltd system, at 23 DEG C be liquid)：60 parts
(d) phenolic resin (trade name " MEH-7851ss " is bright and chemical conversion Co. Ltd. system, at 23 DEG C be solid)：100 parts
(e) spherical silicon dioxide (trade name " SO-25R " Admatechs Co., Ltd. system)：40 parts
Adhesive composite solution B is coated on to the thickness for having carried out silicone release processing for 50 μm by gathering to benzene two On the demoulding processing film (release liner) of formic acid glycol ester film formation, then dried 2 minutes at 130 DEG C.Thus make Make the die bonding film B of 10 μm of thickness (average thickness).
The making ＞ of ＜ diced chip bonding films
Prepare the cutting sheet A identical cutting sheets with being used in embodiment 1.Then, PET peeling liners are peeled off from cutting sheet A Pad, fit die bonding film B on the adhesive phase exposed.Laminating uses hand pressure roller.Then, irradiated from cutting sheet side 300mJ ultraviolet.Thus, diced chip bonding film B is obtained.
(embodiment 3)
The making ＞ of ＜ die bonding films
Following (a)~(e) is dissolved in methyl ethyl ketone, obtain the weight % of solid component concentration 20 adhesive composite Solution C.
(a) acrylic resin (trade name " SG-70L " Nagase ChemteX Corporation systems, glass transition Temperature (Tg)：-13℃)：100 parts
(b) epoxy resin (trade name " JER1010 " Mitsubishi chemical Co., Ltd system, at 23 DEG C be solid)：140 parts
(c) epoxy resin (trade name " JER828 " Mitsubishi chemical Co., Ltd system, at 23 DEG C be liquid)：60 parts
(d) 100 parts of phenolic resin (trade name " MEH-7851ss " is bright and chemical conversion Co. Ltd. system, at 23 DEG C be solid)
(e) spherical silicon dioxide (trade name " SO-25R " Admatechs Co., Ltd. system)：100 parts
Adhesive composite solution C is coated on to the thickness for having carried out silicone release processing for 50 μm by gathering to benzene two On the demoulding processing film (release liner) of formic acid glycol ester film formation, then dried 2 minutes at 130 DEG C.Thus To 10 μm of die bonding film C of thickness (average thickness).
The making ＞ of ＜ diced chip bonding films
Prepare the cutting sheet same with the cutting sheet A that embodiment 1 is used.Then, PET release liners are peeled off from cutting sheet A, Fit die bonding film C on the adhesive phase exposed.Laminating uses hand pressure roller.Then, irradiate 300mJ's from cutting sheet side Ultraviolet.Thus, diced chip bonding film C is obtained.
(embodiment 4)
The making ＞ of ＜ diced chip bonding films
Prepare the cutting sheet same with the cutting sheet A used in embodiment 1.In addition, preparing the core with being used in embodiment 1 Chip bonding film A identical bonding films.Then, PET release liners are peeled off from cutting sheet A, is pasted on the adhesive phase exposed Close die bonding film A.Laminating uses hand pressure roller.Then, 40mJ ultraviolet is irradiated from cutting sheet side.Thus, cut Die bonding film D.
(embodiment 5)
The making ＞ of ＜ diced chip bonding films
Prepare the cutting sheet same with the cutting sheet A used in embodiment 1.In addition, preparing the core with being used in embodiment 1 Bonding film same chip bonding film A.Then, PET release liners are peeled off from cutting sheet A, is pasted on the adhesive phase exposed Close die bonding film A.Laminating uses hand pressure roller.Then, 80mJ ultraviolet is irradiated from cutting sheet side.Thus, cut Die bonding film E.
(embodiment 6)
The making ＞ of ＜ cutting sheets
The binder solution A prepared similarly to Example 1 the organosilicons that implement for being coated on PET release liners are handled Face on, heat drying 2 minutes at 120 DEG C, formed 10 μm of thickness adhesive phase A.Then, exposing in adhesive phase A Polyvinyl chloride film (Achilles company systems, the ProductName that 100 μm of face coating thickness：V-9KN), 72 are preserved at 23 DEG C small When, obtain cutting sheet C.
The making ＞ of ＜ diced chip bonding films
Prepare the bonding film A same with the die bonding film A used in embodiment 1.Then, peeled off from cutting sheet C PET release liners, fit die bonding film A on the adhesive phase exposed.Laminating uses hand pressure roller.Then, from cutting sheet 300mJ ultraviolet is irradiated in side.Thus, diced chip bonding film I is obtained.
(comparative example 1)
The making ＞ of ＜ cutting sheets
The binder solution A prepared similarly to Example 1 the organosilicons that implement for being coated on PET release liners are handled Face on, heat drying 2 minutes at 120 DEG C, formed 10 μm of thickness adhesive phase A.Then, exposing in adhesive phase A The GUNZE LIMITED eva films (ethylene vinyl acetate copolymer film) of 115 μm of face coating thickness, at 23 DEG C Preserve 72 hours.
Then, 300mJ ultraviolet is irradiated from eva film side (substrate side).Thus, cutting sheet B is obtained.
The making ＞ of ＜ diced chip bonding films
Prepare the die bonding film same with the die bonding film B used in embodiment 2.PET is peeled off from cutting sheet B Release liner, fit die bonding film B on the adhesive phase exposed.Laminating uses hand pressure roller.Thus, diced chip is obtained Bonding film F.
(comparative example 2)
The making ＞ of ＜ die bonding films
Following (a)~(d) is dissolved in methyl ethyl ketone, obtain the weight % of solid component concentration 20 adhesive composite Solution D.
(a) acrylic resin (trade name " SG-70L " Nagase ChemteX Corporation systems)：100 parts
(b) epoxy resin (trade name " JER828 " Mitsubishi chemical Co., Ltd system)：200 parts
(c) 100 parts of phenolic resin (trade name " MEH-7851ss " is bright and is melted into Co. Ltd. system)
(d) spherical silicon dioxide (trade name " SO-25R " Admatechs Co., Ltd. system)：100 parts
Adhesive composite solution D is coated on to the thickness handled by silicone release for 50 μm by poly- terephthaldehyde On the demoulding processing film (release liner) of sour glycol ester film formation, then dried 2 minutes at 130 DEG C.Thus obtain The die bonding film D of 10 μm of thickness (average thickness).
The making ＞ of ＜ diced chip bonding films
Prepare the cutting sheet same with the cutting sheet A used in embodiment 1.Then, PET peeling liners are peeled off from cutting sheet A Pad, fit die bonding film D on the adhesive phase exposed.Laminating uses hand pressure roller.Then, irradiated from cutting sheet side 300mJ ultraviolet.Thus, diced chip bonding film G is obtained.
(comparative example 3)
The making ＞ of ＜ diced chip bonding films
Prepare the cutting sheet same with the cutting sheet A used in embodiment 1.In addition, preparing the core with being used in embodiment 1 Die bonding film same chip bonding film A.Then, PET release liners are peeled off from cutting sheet A, in the adhesive phase exposed Upper laminating die bonding film A.Laminating uses hand pressure roller.Thus, diced chip bonding film H is obtained.
(measure of cutting sheet and the peeling force of die bonding film)
Demoulding processing film is peeled off from the diced chip bonding film of embodiment and comparative example, reveals die bonding film Go out.Then, fitted on the die bonding film exposed width 50mm inner liner rubber band (BT315, day eastern electrician's system).Along interior The width 50mm of lining rubber tape cuts diced chip bonding film, (is fitted with die bonding film with 50mm width measurements cutting sheets Have the die bonding film of inner liner rubber band) peeling force.The peeling force determined at 23 DEG C of temperature is set to peeling force A, will be determined Peeling force at -15 DEG C of temperature is set to peeling force B.Peeling force A, the respective condition determinations of peeling force B are as described below.Result is shown In table 1.
＜ peeling forces A condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes
Determine device：SHIMADZU company systems, AG-20KNSD
＜ peeling forces B condition determination ＞
T-shaped disbonded test
Sample is set in the environment of -15 DEG C, determined after 2 minutes
Peeling rate 300mm/ minutes.
Determine device：SHIMADZU company systems, the 3 redrawing testing machines with constant temperature and humidity cabinet
[storage tensile modulus of the die bonding film at -15 DEG C, the storage tensile modulus at 23 DEG C and vitrifying turn The measure of temperature]
The die bonding film of overlapping embodiment and comparative example is until thickness becomes 200 μm.Then, length is cut out with cutter Spend 40mm (measured length), width 10mm short strip shape.Then, using solid determination of viscoelasticity device (RSAIII, Rheometric Scientific Ltd. systems), the storage tensile modulus of -50~100 DEG C of measure.Condition determination is set to frequency Apart from 22.5mm between 1Hz, 10 DEG C/min of programming rate, chuck.The value at -15 DEG C and 23 DEG C now is read, is stored up as stretching The measured value of energy modulus.The storage tensile modulus determined at 23 DEG C of temperature is set to storage tensile modulus A, temperature -15 will be determined Storage tensile modulus at DEG C is set to storage tensile modulus B.Show the result in table 1.In addition, storage tensile modulus A is stored up with stretching The ratio between energy modulus B [(storage tensile modulus B)/(storage tensile modulus A)] is also shown in table 1 in the lump.And then, by calculating tan δ The value of (E " (loss elastic modulus)/E ' (storage modulus)), obtains glass transition temperature (Tg).Show the result in table 1.
[storage tensile modulus of the adhesive phase at -15 DEG C, the measure of storage tensile modulus at 23 DEG C]
The adhesive phase of overlapping embodiment and comparative example is until thickness becomes 200 μm.Then, cutter cut-out length is used 40mm (measured length), width 10mm short strip shape.Then, using solid determination of viscoelasticity device (RSAIII, Rheometric Scientific Ltd. systems) determine -50~100 DEG C of storage tensile modulus.Condition determination is set to frequency 1Hz, programming rate 10 DEG C/min, between chuck apart from 22.5mm.The value at -15 DEG C and 23 DEG C now is read, the measure of storage tensile modulus is used as Value.The storage tensile modulus determined at 23 DEG C of temperature is set to storage tensile modulus A, the stretching determined at -15 DEG C of temperature is stored up Energy modulus is set to storage tensile modulus B.Show the result in table 1.In addition, the ratio between storage tensile modulus A and storage tensile modulus B [(storage tensile modulus B)/(storage tensile modulus A)] is also shown in table 1 in the lump.
[- 15 DEG C of base material, elongation 100% when tensile strength measure]
The base material of embodiment and comparative example is cut to width 10mm respectively.Then, for the sample, tension test is used Machine (Tensilon, Shimadzu Scisakusho Ltd's system) obtains apart from 10mm, draw speed 100mm/ dividing between -15 DEG C, chuck Tensile strength under clock during 100% stretching.Sample be set in -15 DEG C in the environment of after, be measured after the 2 minutes.By result It is shown in table 1.
(expansion evaluation)
Using Tokyo Seimitsu Co., Ltd's system, ML300-Integration as laser processing device, it is directed at focal point The inside of 12 inches of semiconductor crystal wafer, irradiates laser, in semiconductor die along the pre-segmentation line of clathrate (10mm × 10mm) Round is internally formed modification area.Laser irradiation condition is proceeded as described below.
(A) laser
(B) optically focused lens
50 times of multiplying power
NA 0.55
To the transmitance 60% of optical maser wavelength
(C) it is placed with translational speed 100mm/ seconds of the mounting table of semiconductor substrate
Then, in the surface laminating back of the body mill Protection glue band of semiconductor crystal wafer, DISCO Corporation Back are used Grinder DGP8760 are ground the back side in the way of the thickness of semiconductor crystal wafer turns into 30 μm.
Then, laminating utilize the preceding processing of laser on the diced chip bonding film of embodiment and comparative example Aforesaid semiconductor wafer and cut ring.
Then, semiconductor crystal wafer is carried out by using DISCO Corporation Die Separator DDS2300 Cut off and cutting sheet thermal contraction, obtain sample.Specifically, first, with cooling expanding element in -15 DEG C of extended temperature, expansion Semiconductor crystal wafer is cut off under conditions of exhibition speed 200mm/ seconds, propagation 12mm.
Then, with heating expanding element in propagation 10mm, 250 DEG C of heating-up temperature, air quantity 40L/ minutes, heating distance Make cutting sheet thermal contraction under conditions of 20mm, 3 °s/sec of rotary speed.
The area of the part floated with micro- sem observation die bonding film from cutting sheet is (by die bonding film entirety The ratio of the area of the die bonding film floated when area is set to 100%).The situation that the area floated is less than 30% is set For zero, more than 30% situation is set to × evaluated.Show the result in table 1.
(chip disperses evaluation caused by cleaning)
Using the sample after expansion evaluation, carry out the chip caused by cleaning and disperse evaluation.Specifically, first, will be solid Surely the cutting sheet for having the state of the semiconductor chip of microarray strip bonding film is arranged at spinner.Then, while to semiconductor core Piece is added dropwise as the water of cleaning fluid while rotating spinner.Thus, the surface of semiconductor chip is cleaned.By the rotation of spinner Speed is set to 2500rpm, rotational time and is set to 1 minute.Afterwards, drying in 1 minute is carried out with 800rpm.Confirm whether chip disperses Disappear.The situation that all chips are remained is evaluated as zero, and the situation that even 1 chip is disappeared also is evaluated as ×.By result It is shown in table 1.
(pickup is evaluated)
Using the sample after dispersing evaluation by the caused chip of cleaning, evaluation is picked up.Specifically, using Die Bonder SPA-300 (new river Co. Ltd. system), are picked up in following condition.Situation about can all pick up is set to Even if the 0, the chip that can not be picked up also is set to × evaluated for 1.Show the result in table 1.
＜ pickup conditions ＞
Number of pins：5
Pickup height：500μm
Number is evaluated in pickup：50 chips
[table 1]

Claims (2)

1. a kind of diced chip bonding film, it is characterised in that have：
Cutting sheet；With
The die bonding film in the cutting sheet is layered in,
The cutting sheet is located with the peeling force A at 23 DEG C of the die bonding film under following peeling force A condition determination In in more than 0.1N/20mm and below 0.25N/20mm scope,
The cutting sheet is located with the peeling force B at -15 DEG C of the die bonding film under following peeling force B condition determination In in more than 0.15N/20mm and below 0.5N/20mm scope,
The die bonding film is used by applying tensile stress and being broken,
＜ peeling forces A condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes
＜ peeling forces B condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes.
2. a kind of manufacture method of semiconductor device, it is characterised in that including following process：
Process A, the laminated semiconductor wafer on diced chip bonding film；
Process B, below 0 DEG C under conditions of, extend the diced chip bonding film, the die bonding film is broken Split, obtain the chip of microarray strip bonding film；With
Process C, picks up the chip of the microarray strip bonding film,
The diced chip bonding film has：
Cutting sheet；With
The die bonding film in the cutting sheet is layered in,
The cutting sheet is located with the peeling force A at 23 DEG C of the die bonding film under following peeling force A condition determination In in more than 0.1N/20mm and below 0.25N/20mm scope,
The cutting sheet is located with the peeling force B at -15 DEG C of the die bonding film under following peeling force B condition determination In in more than 0.15N/20mm and below 0.5N/20mm scope,
＜ peeling forces A condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes
＜ peeling forces B condition determination ＞
T-shaped disbonded test
Peeling rate 300mm/ minutes.
CN201710183427.3A 2016-03-24 2017-03-24 The manufacture method of diced chip bonding film and semiconductor device Pending CN107227123A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110527443A (en) * 2018-05-23 2019-12-03 日东电工株式会社 Cut die bonding film

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CN104946151A (en) * 2014-03-31 2015-09-30 日东电工株式会社 Chip bonding film, chip bonding film with cutting sheet, semiconductor device and making method thereof
CN104946152A (en) * 2014-03-31 2015-09-30 日东电工株式会社 Cutting film, cutting/chip bonding film and semiconductor making method

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