CN104946152A - Cutting film, cutting/chip bonding film and semiconductor making method - Google Patents
Cutting film, cutting/chip bonding film and semiconductor making method Download PDFInfo
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- CN104946152A CN104946152A CN201510148818.2A CN201510148818A CN104946152A CN 104946152 A CN104946152 A CN 104946152A CN 201510148818 A CN201510148818 A CN 201510148818A CN 104946152 A CN104946152 A CN 104946152A
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- die bonding
- bonding film
- film
- dicing
- cutting
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- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Laser Beam Processing (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The invention provides a cutting film causing broken of a semiconductor wafer and a chip bonding film even under low temperature expansion, a cutting/chip bonding film and a making method of a semiconductor device; the cutting film comprises a substrate and a bonding agent layer arranged on the substrate; using stress-strain curve of MD and TD direction in load stretch stress under 0 DEG C so as to calculate MD direction energy storage analog as E'MD1, TD direction energy storage analog E'TD1, and 0.75<E'MD1/E'TD1<1.25.
Description
Technical field
The present invention relates to the manufacture method of cutting film, dicing/die bonding film and semiconductor device.
Background technology
In the past, propose in the manufacturing process of semiconductor device, bonding maintenance semiconductor crystal wafer in cutting action, also gives the dicing/die bonding film (such as, see patent documentation 1) of the bond layer of the chip set needed for installation procedure simultaneously.This dicing/die bonding film arranges bond layer on the cutting film possessing support base material and binder layer, with after blade cuts (so-called blade cuts) semiconductor crystal wafer under the maintenance utilizing this bond layer, stretch cutting film in expansion (expand) operation, then the chip of singualtion is picked up together with bond layer, it is reclaimed one by one and is bonded to the adherends such as lead frame via this bond layer.
On the other hand, propose in recent years: modification area is formed to the segmentation preset lines irradiating laser of semiconductor crystal wafer, thus after semiconductor crystal wafer is easily split along segmentation preset lines, apply tensile stress, thus this semiconductor crystal wafer is ruptured, obtain the method (hereinafter also referred to " Stealth Dicing (registered trademark) ") (such as, see patent documentation 2 and 3) of each semi-conductor chip.According to these methods, even especially slim semiconductor die fenestra can reduce the generation of the faults such as fragmentation, and kerf width (notching edge) can be made narrower than ever, the productive rate realizing semi-conductor chip improves.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2008-218571 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2002-192370 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2003-338467 publication
Summary of the invention
the problem that invention will solve
In order to each semi-conductor chip utilizing Stealth Dicing to obtain microarray strip bonding film under the maintenance of dicing/die bonding film, need to utilize the tensile stress in expansion operation that die bonding film is ruptured together with semiconductor crystal wafer.But in fact not only die bonding film load tensile stress, especially cuts film load tensile stress and makes film elongation and can cause the fracture of die bonding film.
In Stealth Dicing, in order to improve the breaking property of die bonding film, proposing at low temperatures (such as, 0 DEG C) and carrying out expanding such method.But, when being expanded at low temperatures by the cutting film in existing dicing/die bonding film, there is semiconductor crystal wafer, such unfavorable condition is not ruptured in die bonding film local, causes the result that the fabrication yield of semiconductor device reduces.
The present invention makes in view of foregoing problems, its object is to provide utilize the expansion under low temperature also can cause semiconductor crystal wafer, die bonding film fracture cutting film and possess its dicing/die bonding film and use the manufacture method of semiconductor device of these films.
for the scheme of dealing with problems
Present inventors etc. conduct in-depth research to solve foregoing problems, found that, characteristic (hereinafter also referred to " tensile properties ") when considering cutting film and even dicing/die bonding film load tensile stress creates anisotropy, by suppressing this anisotropy, die bonding film and semiconductor crystal wafer can be made to rupture aptly because of tensile stress, thus complete the present invention.
That is, the present invention relates to a kind of cutting film, it possesses base material and is arranged at the binder layer on this base material,
The storage modulus in the MD direction obtained by the stress-strain curve at MD direction and each comfortable 0 DEG C of TD direction during load tensile stress is set to E '
mD1, TD direction storage modulus be set to E '
tD1time, E '
mD1/ E '
tD1be more than 0.75 and less than 1.25.
Present inventors etc. are conceived to the anisotropy of tensile properties, particularly bear the anisotropy of the base material of the physical strength of cutting film.The film substrate (being ethylene series film typically) that cutting film uses often is endowed anisotropy in the manufacturing process such as extrusion molding, stretch processing, in addition, owing to processing with web-like, therefore also sometimes produce anisotropy because coiling tension etc. produces tensile stress.And then, when manufacturing dicing/die bonding film, sometimes on the rectangular cutting film of conveying, paste the die bonding film be formed on barrier film and make both integrations.When tension force in this adhering processes is stronger, also can produce stress because of it, produce anisotropy.
In expansion operation, whole peripheries of cutting film are stretched and load tensile stress in the radial direction, but the tensile properties of cutting film in face that use has anisotropic base material and obtains becomes uneven, and the fracture of semiconductor crystal wafer and/or die bonding film becomes insufficient thus.Particularly under 0 DEG C of such low temperature, there is this anisotropy and become obvious tendency.
For this cutting film, by the storage modulus E ' in the MD direction at 0 DEG C during load elongation stress
mD1with the storage modulus E ' in TD direction
tD1ratio (E '
mD1/ E '
tD1, hereinafter also referred to " anisotropy ratio 1 ") and be set to more than 0.75 and less than 1.25.In other words, inhibit the anisotropy of the storage modulus as one of tensile properties, make the tensile properties in the face of cutting film be isotropy as much as possible.Thus, load is in the face of cutting film equably for tensile stress during expansion, and cutting film becomes even to the elongation of radial direction, can cause the abundant fracture of die bonding film and semiconductor crystal wafer.When departing from the upper and lower bound of anisotropy ratio 1, all show the anisotropy of the tensile properties of cutting film in any case, sometimes cannot cause sufficient fracture.
It should be noted that, in this specification sheets, MD direction refers to the travel direction of base material, and TD direction refers to the direction vertical with MD direction.In addition, the record of the measuring method foundation embodiment of each storage modulus.
This cutting film preferably, aforementioned storage modulus E '
mD1with aforementioned storage modulus E '
tD1the absolute value of difference be more than 1MPa and below 50MPa.Be set to above-mentioned scope by the absolute value of the difference by storage modulus, thus the tensile properties of cutting film can be made evenly change.
This cutting film preferably, aforementioned storage modulus E '
mD1with aforementioned storage modulus E '
tD1central at least one is more than 10MPa and below 100MPa.Thereby, it is possible to the neglectful fracture of cutting film under preventing low temperature, even and if cut film at low temperatures and also extend well, the abundant fracture of die bonding film and semiconductor crystal wafer can be caused.
In the present invention, also comprise the dicing/die bonding film possessing this cutting film He be arranged at the thermosetting die bonding film on the binder layer of this cutting film.Thereby, it is possible to carry out from the cutting of the semiconductor crystal wafer operation till the installation of the pickup of semiconductor element, semiconductor element efficiently as a series of flow process.
Preferably, the peeling force at 0 DEG C between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film is higher than the peeling force at 23 between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film DEG C for this dicing/die bonding film.Thereby, it is possible to the separability of the chip of microarray strip bonding film when the confining force of semiconductor crystal wafer when making cutting and/or semiconductor element and pickup balances aptly.
Preferably, the peeling force at 0 DEG C between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film is more than 0.15N/100mm and below 5N/100mm to this dicing/die bonding film.When peeling force between cutting film and die bonding film is more weak, be peeling at the interface of die bonding film with cutting film when expanding, as its result, fracture semiconductor element that is bad, fracture occurs to disperse such unfavorable condition, the peeling force therefore at 0 DEG C is preferably more than 0.15N/100mm.On the other hand, when peeling force is too high, sometimes there is fracture bad, be therefore preferably below 5N/100mm.It should be noted that, in this specification sheets, the record of the measuring method foundation embodiment of each peeling force.
Preferably, the peeling force at 23 DEG C between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film is more than 0.05N/100mm and below 2.5N/100mm to this dicing/die bonding film.In order to the semiconductor element of Self cleavage film pick-up tape die bonding film under normal temperature (23 ± 2 DEG C), preferably there is light separability.Particularly the semiconductor crystal wafer of Stealth Dicing is by slimming compared with the situation of blade cuts, becomes and easily cracks, and therefore requires the further reduction of peeling force.By peeling force is set to below 2.5N/100mm, thus good light separability can be played.On the other hand, when peeling force is lower than 0.05N/100mm, the maintenance of semiconductor element when sometimes carrying becomes difficulty.It should be noted that, when binder layer is the type utilizing uviolizing and bounding force to reduce, the peeling force after uviolizing is in above-mentioned scope.
This dicing/die bonding film can be suitably used for semiconductor crystal wafer irradiating laser and after forming modification area, make aforesaid semiconductor wafer along aforementioned modified regional fracture, thus obtains the manufacture method of the semiconductor element of semiconductor element.
In the present invention, also comprise a kind of manufacture method of semiconductor device, it comprises following operation:
To the segmentation preset lines irradiating laser of semiconductor crystal wafer, form the operation of modification area along previous segmentation preset lines;
Semiconductor crystal wafer after being formed by modification area is pasted on the operation of this dicing/die bonding film;
Under the condition of-20 DEG C ~ 15 DEG C, tensile stress is applied to aforementioned dicing/die bonding film, thus aforesaid semiconductor wafer is ruptured along previous segmentation preset lines with the die bonding film with aforementioned dicing/die bonding film, form the operation of semiconductor element;
By the operation that aforesaid semiconductor element picks up together with aforementioned die bonding film; And
The aforesaid semiconductor element of pickup is clipped aforementioned die bonding film chip join in the operation of adherend.
This manufacture method carries out the fracture of the semiconductor crystal wafer based on Stealth Dicing due to the dicing/die bonding film using the anisotropy of tensile properties and be suppressed, therefore the abundant fracture of die bonding film and semiconductor crystal wafer can be caused in the expansion operation of load tensile stress, the unfavorable conditions such as the fragmentation of semiconductor element can be prevented, improve and manufacture efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of the dicing/die bonding film that an embodiment of the invention are shown.
Fig. 2 is the schematic cross-section of the dicing/die bonding film that other embodiment of the present invention is shown.
Fig. 3 is the schematic cross-section of a kind of manufacture method of semiconductor device for illustration of present embodiment.
Fig. 4 is the schematic cross-section of a kind of manufacture method of semiconductor device for illustration of present embodiment.
(a) of Fig. 5, (b) of Fig. 5 are the schematic cross-section of a kind of manufacture method of semiconductor device for illustration of present embodiment.
Fig. 6 is the schematic cross-section of a kind of manufacture method of semiconductor device for illustration of present embodiment.
description of reference numerals
1 base material
2 binder layers
3,3 ' die bonding film (thermosetting die bonding film)
4 semiconductor crystal wafers
5 semi-conductor chips
6 adherends
7 bonding wires
8 potting resins
10,12 dicing/die bonding films
11 cutting films
Embodiment
< dicing/die bonding film >
Dicing/die bonding film of the present invention is below described.Fig. 1 is the schematic cross-section of the dicing/die bonding film that an embodiment of the invention are shown.Fig. 2 is the schematic cross-section of the dicing/die bonding film that other embodiment of the present invention is shown.
As shown in Figure 1, dicing/die bonding film 10 has the structure being laminated with die bonding film 3 on cutting film 11.Cutting film 11 stacked binder layer 2 and forming on base material 1, die bonding film 3 is arranged on this binder layer 2.In addition, the present invention also can be the such structure that only be formed with die bonding film 3 ' in semiconductor crystal wafer adhesive portion of dicing/die bonding film 12 as shown in Figure 2.
(cutting film)
The storage modulus in the MD direction that the stress-strain curve of cutting film 11 at by MD direction and each comfortable 0 DEG C of TD direction during load tensile stress is obtained is set to E '
mD1, TD direction storage modulus be set to E '
tD1time, E '
mD1/ E '
tD1be more than 0.75 and less than 1.25.Above-mentioned than (anisotropy ratio 1) E '
mD1/ E '
tD1lower limit be preferably more than 0.78.On the other hand, the upper limit of above-mentioned anisotropy ratio 1 is preferably less than 1.20, is more preferably less than 1.17.By the anisotropy ratio 1 of cutting film 11 is set to above-mentioned scope, thus expansion time tensile stress equably load in cutting film face in, cutting film becomes even to the elongation of radial direction, can cause the abundant fracture of die bonding film and semiconductor crystal wafer.
(base material)
Aforementioned substrates 1 preferably has ultraviolet perviousness, becomes the strength substrate of dicing/die bonding film 10,12.Such as, Low Density Polyethylene can be listed, straight-chain polyethylene, medium-density polyethylene, high density polyethylene(HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, the polyolefine such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) multipolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, urethane, polyethylene terephthalate, the polyester such as PEN, polycarbonate, polyimide, polyether-ether-ketone, polyimide, polyetherimide, polymeric amide, fully aromatic polyamide, polyphenylene sulfide, aramid fiber (paper), glass, woven fiber glass, fluoro-resin, polyvinyl chloride, polyvinylidene dichloride, cellulose-based resin, silicone resin, metal (paper tinsel), paper etc.In addition, the polymkeric substance such as the crosslinked of aforementioned resin can be listed.
Aforementioned resin film is easily endowed anisotropy in its manufacturing processed.The physical strength of cutting film born by base material, therefore causes stronger impact to the anisotropy of the tensile properties of cutting film.Therefore, it is preferred for being suppressed as the anisotropy of the resin film self of base material.As the anisotropic measure relaxing resin film, be not particularly limited, include, for example out: use the resin film formed by solution casting method; Or carry out the thermal treatment that can relax the level of the stress residuing in resin film; Or do not carry out stretching, calendering procedure etc., and weaken the tension force batched as much as possible, to make not to resin film stress application.About resin film, as long as the anisotropy of the tensile properties cutting film can be suppressed, then can use with tensionless winkler foundation state, also can use the film of the stretch processing implementing single shaft or twin shaft as required.
The surface of base material 1 can in order to improve and the adaptation of adjacent layer, retentivity etc. and implement conventional surface treatment, the chemical such as such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, ionization radial line process or the process of physical property, the coating process based on silane coupling agent (such as, aftermentioned adhesive substance).Aforementioned substrates 1 can suitably be selected material of the same race or not of the same race to use, and can use multiple blended material as required.In addition, in order to give antistatic effect to base material 1, can arrange in aforementioned substrates 1 and by metal, alloy, thickness that their oxide compound etc. is formed be
the evaporation layer of the conductive material of left and right.Base material 1 can be individual layer or multilayer of more than two kinds.
The thickness of base material 1 can suitably be determined without particular limitation, is generally about 5 ~ 200 μm.
(binder layer)
Aforementioned adhesion oxidant layer 2 comprises ultraviolet-curing adhesive and forms.Ultraviolet-curing adhesive increases degree of crosslinking because of ultraviolet irradiation, can easily reduce its bounding force, by only carrying out uviolizing to the part 2a corresponding with semiconductor crystal wafer adhesive portion of the binder layer 2 shown in Fig. 2, thus the difference with the bounding force of other parts 2b can be set.
In addition, by making the binder layer 2 of ultraviolet hardening solidify matchingly with the die bonding film 3 ' shown in Fig. 2, thus easily can form the preceding sections 2a that bounding force significantly reduces.Because the preceding sections 2a that bounding force reduces there is solidification is pasted with die bonding film 3 ', the preceding sections 2a of binder layer 2 and the interface of die bonding film 3 ' have the character easily peeled off when picking up.On the other hand, the part of non-irradiation ultraviolet radiation has sufficient bounding force, forms preceding sections 2b.
As previously mentioned, in the binder layer 2 of the dicing/die bonding film 10 shown in Fig. 1, the preceding sections 2b utilizing uncured ultraviolet-curing adhesive to be formed and die bonding film 3 bond, and can guarantee confining force when cutting.So, ultraviolet-curing adhesive can support for by the die bonding film 3 of semi-conductor chip chip join in adherends such as substrates in bonding/good mode of balance of peeling off.In the binder layer 2 of the dicing/die bonding film 12 shown in Fig. 2, preceding sections 2b can fix wafer central.
Aforementioned ultraviolet-curing adhesive can use ultra-violet solidified functional groups such as having carbon-to-carbon double bond without particular limitation and show fusible material.As ultraviolet-curing adhesive, such as, can exemplify the ultraviolet-curing adhesive of the addition type of compounding ultra-violet solidified monomer component, oligopolymer composition in the common pressure-sensitive adhesive such as acrylic adhesives, elastomeric adhesive.
As aforementioned pressure-sensitive caking agent, that does not wish from semiconductor crystal wafer, glass etc. the electronic unit polluted utilizes the viewpoints such as the clean cleaning of the organic solvent such as ultrapure water, alcohol, the preferably acrylic adhesives of polymkeric substance based on acrylic polymers.
As foregoing acrylic polymkeric substance, include, for example out use (methyl) alkyl acrylate (such as, methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-ethylhexyl, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, stearyl, the carbon number 1 ~ 30 of the alkyl such as eicosyl ester, the particularly straight-chain of carbon number 4 ~ 18 or the alkyl ester etc. of branched) and (methyl) acrylate base ester is (such as, cyclopentyl ester, cyclohexyl ester etc.) in the one kind or two or more acrylic polymers etc. as monomer component.It should be noted that, (methyl) acrylate refers to acrylate and/or methacrylic ester, and (methyl) of the present invention is same connotation.
Foregoing acrylic polymkeric substance also can comprise as required in order to the modification of force of cohesion, thermotolerance etc. correspond to can with the unit of other monomer component of aforementioned (methyl) alkyl acrylate or cycloalkyl ester copolymerization.As this monomer component, include, for example out the carboxyl group-containing monomers such as vinylformic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) vinylformic acid carboxyl pentyl ester, methylene-succinic acid, toxilic acid, fumaric acid, β-crotonic acid; The anhydride monomers such as maleic anhydride, itaconic anhydride; The hydroxyl monomers such as (methyl) vinylformic acid 2-hydroxy methacrylate, (methyl) vinylformic acid 2-hydroxy propyl ester, (methyl) vinylformic acid 4-hydroxybutyl, the own ester of (methyl) vinylformic acid 6-hydroxyl, (methyl) vinylformic acid 8-hydroxyl monooctyl ester, (methyl) vinylformic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid 12-hydroxylauric ester, (methyl) vinylformic acid (4-Hydroxymethyl-cyclo-hexyl) methyl esters; Styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) sulfopropyl acrylate, (methyl) propane sulfonic acid etc. are containing sulfonic group monomer; The phosphorous acid-based monomers such as 2-hydroxyethyl acryloyl phosphate; Acrylamide, vinyl cyanide etc.The monomer component of these energy copolymerization can use one kind or two or more.The consumption of the monomer of these energy copolymerization is preferably less than 40 % by weight of whole monomer component.
And then foregoing acrylic polymkeric substance can comprise multi-functional monomer etc. as comonomer composition as required in order to carry out crosslinked.As this multi-functional monomer, include, for example out hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, tetramethylolmethane two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These multi-functional monomers also can use one kind or two or more.The consumption of multi-functional monomer is preferably less than 30 % by weight of whole monomer component from the viewpoint of adhesion characteristic etc.
Foregoing acrylic polymkeric substance can by being polymerized single monomer or monomer mixture of more than two kinds and obtaining.Be polymerized and carry out with any-mode in solution polymerization, letex polymerization, mass polymerization, suspension polymerization etc.From the view point of the pollution etc. prevented clean adherend, the content of low molecular weight substance is little is preferred.From this viewpoint, the number-average molecular weight of acrylic polymers is preferably more than 300,000, more preferably 400,000 ~ about 3,000,000.
In addition, in aforementioned adhesion agent, in order to the number-average molecular weight of the acrylic polymers etc. of polymkeric substance based on improving, also can adopt external crosslinker aptly.As the concrete means of outside cross-linking method, the method that so-called linking agents such as adding polyisocyanate compound, epoxy compounds, aziridine cpd, melamine series linking agent carries out reacting can be listed.When using external crosslinker, its consumption is according to the balance with the base polymer that will be cross-linked and then suitably determine according to the use as tackiness agent.Usually, relative to 100 weight part aforementioned base polymkeric substance, be preferably below 5 weight parts.In addition, more than 0.1 weight part is preferably as lower value.And then, the additives such as various tackifier, anti-aging agent can also be used as required in tackiness agent except aforesaid ingredients.
As compounding aforementioned ultra-violet solidified monomer component, include, for example out oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, tetramethylolmethane four (methyl) acrylate, Dipentaerythritol monohydroxy five (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, ultra-violet solidified oligopolymer composition can list the various oligopolymer such as carbamate system, polyethers system, Polyester, polycarbonate-based, polyhutadiene system, its molecular weight be about 100 ~ 30000 scope be suitable.The compounding amount of ultra-violet solidified monomer component, oligopolymer composition can determine the amount of the bounding force that can reduce binder layer aptly according to the kind of aforementioned adhesion oxidant layer.Usually, relative to base polymer 100 weight part such as acrylic polymers forming tackiness agent, be such as 5 ~ 500 weight parts, be preferably 70 ~ 150 weight parts about.
In addition, as ultraviolet-curing adhesive, except the ultraviolet-curing adhesive of the addition type of aforementioned explanation, also can list and be used in polymer lateral chain or main chain or the ultraviolet-curing adhesive of the inherent type of polymkeric substance based on polymkeric substance that main chain terminal has a carbon-to-carbon double bond.The ultraviolet-curing adhesive of inherent type does not need the oligopolymer composition etc. containing or do not contain in a large number as low molecular weight compositions, therefore do not exist oligopolymer composition etc. through time the situation of movement in tackiness agent, the binder layer of stable Rotating fields can be formed, so preferably.
The aforementioned base polymer with carbon-to-carbon double bond can use without particular limitation to be had carbon-to-carbon double bond and has fusible polymkeric substance.As this base polymer, preferably using acrylic polymers as basic framework.As the basic framework of acrylic polymers, aforementioned illustrative acrylic polymers can be listed.
The method importing carbon-to-carbon double bond to aforementioned acrylic polymers is not particularly limited, and can adopt various method, and when polymer lateral chain imports carbon-to-carbon double bond, molecular designing is easy.Such as, following method can be listed: after copolymerization has the monomer of functional group in acrylic polymers in advance, make to have and to carry out the method for condensation or addition reaction with the ultra-violet solidified state maintaining carbon-to-carbon double bond with the compound of the functional group of this functional group reactions and carbon-to-carbon double bond.
As the example of the combination of these functional groups, carboxylic acid group and epoxy group(ing), carboxylic acid group and '-aziridino, hydroxyl and isocyanate group etc. can be listed.In the middle of the combination of these functional groups, from the easness of reactive tracing, the combination of hydroxyl and isocyanate group is suitable.In addition, as long as the combination that the aforementioned acrylic polymers with carbon-to-carbon double bond of the combination producing of these functional groups is such can be utilized, then functional group is arranged in acrylic polymers and aforesaid compound side arbitrarily, but in aforementioned preferred combination, acrylic polymers has hydroxyl and the situation that aforesaid compound has isocyanate group is suitable.Now, as the isocyanate compound with carbon-to-carbon double bond, include, for example out methacryloyl isocyanate, 2-methacryloxyethyl isocyanic ester, m-pseudoallyl-alpha, alpha-dimethylbenzyl isocyanic ester etc.In addition, as acrylic polymers, can use the material of the copolymerization such as the ether based compound of aforementioned illustrative hydroxyl monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl base ether.
The ultraviolet-curing adhesive of aforementioned inherent type can be used alone the aforementioned base polymer (particularly acrylic polymers) with carbon-to-carbon double bond, but also can not make the compounding aforementioned ultra-violet solidified monomer component of the level of characteristic degradation, oligopolymer composition.Ultra-violet solidified oligopolymer compositions etc. are generally in the scope of 30 weight parts relative to 100 parts by weight of base polymkeric substance, are preferably the scope of 0 ~ 10 weight part.
In aforementioned ultraviolet-curing adhesive, contain Photoepolymerizationinitiater initiater when utilizing ultraviolet etc. to be cured.As Photoepolymerizationinitiater initiater, include, for example out the α-ketal based compounds such as 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxy cyclohexyl phenylketone; The methyl phenyl ketone based compounds such as methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenones, 2-methyl isophthalic acid-[4-(methylthio group)-phenyl]-2-morpholinopropane-1-ketone; The benzoin ether based compounds such as ethoxybenzoin, benzoin iso-propylether, anisoin methyl ether; The ketal based compounds such as benzyl dimethyl ketal; The aromatic sulfonyl based compounds such as 2-naphthalic sulfonic chloride; The photolytic activity oxime compounds such as 1-phenyl-1,2-propanedione-2-(o-ethoxy carbonyl) oxime; Benzophenone, benzoyl phenylformic acid, 3, the benzophenone based compounds such as 3 '-dimethyl-4-methoxy benzophenone; The thioxanthone based compounds such as thioxanthone, CTX, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-bis-clopenthixal ketones, 2,4-diethyl thioxanthones, 2,4-diisopropylthioxanthone; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate etc.About the compounding amount of Photoepolymerizationinitiater initiater is such as 0.05 ~ 20 weight part relative to base polymer 100 weight part such as acrylic polymers forming tackiness agent.
In addition, as ultraviolet-curing adhesive, include, for example out disclosed in Japanese Laid-Open Patent Publication 60-196956 publication, containing the elastomeric adhesive, acrylic adhesives etc. with Photoepolymerizationinitiater initiaters such as photopolymerizable compound and carbonyl compound, organosulfur compound, superoxide, amine, salt based compound such as the polyaddition compound of more than 2 unsaturated link(age)s, the organoalkoxysilanes with epoxy group(ing).
As the method forming preceding sections 2a in aforementioned adhesion oxidant layer 2, after the binder layer 2 forming ultraviolet hardening on base material 1 can be listed, to the preceding sections 2a irradiation ultraviolet radiation method that makes it solidify partly.The uviolizing of local can be carried out across the photomask being formed with the pattern corresponding with the part 3b beyond semiconductor crystal wafer adhesive portion 3a etc.In addition, the method etc. making it solidify with hot spot shape irradiation ultraviolet radiation can be listed.The formation of the binder layer 2 of ultraviolet hardening also can be undertaken by being transferred on base material 1 by the binder layer be arranged on barrier film.The ultraviolet curing of local also can be carried out the binder layer 2 of the ultraviolet hardening be arranged on barrier film.
In the binder layer 2 of dicing/die bonding film 10, also can irradiate a part for binder layer 2 in the mode of (bounding force of preceding sections 2a) < (bounding force of other part 2b).Namely, the base material of all or part of shading of the part beyond by the part corresponding with semiconductor crystal wafer adhesive portion 3a of at least one side of base material 1 can be used, uviolizing is carried out after forming the binder layer 2 of ultraviolet hardening thereon, make corresponding with semiconductor crystal wafer adhesive portion 3a partially cured, form the preceding sections 2a that bounding force is reduced.As light screening material, the material that can become photomask in support film can be made by printing, evaporation etc.Thereby, it is possible to efficiency manufactures dicing/die bonding film 10 of the present invention well.
The thickness of binder layer 2 is not particularly limited, and from the view point of preventing the breach of chip cut surface, keeping the fixing property taken into account etc. of adhesive linkage, is preferably about 1 ~ 50 μm, is more preferably 2 ~ 30 μm, more preferably 5 ~ 25 μm.
Cut film 11 preferably, aforementioned storage modulus E '
mD1with aforementioned storage modulus E '
tD1the absolute value of difference be more than 1MPa and below 50MPa, be more preferably more than 3MPa and below 30MPa.Be set to above-mentioned scope by the absolute value of the difference by storage modulus, thus the tensile properties of cutting film can be made evenly change.
Cut film 11 preferably, aforementioned storage modulus E '
mD1with aforementioned storage modulus E '
tD1middle at least one is more than 10MPa and below 100MPa, be more preferably more than 20MPa and below 90MPa.Thereby, it is possible to the neglectful fracture of cutting film under preventing low temperature, even and if cut film at low temperatures and also extend well, the abundant fracture of die bonding film and semiconductor crystal wafer can be caused.
(die bonding film)
The Rotating fields of die bonding film is not particularly limited, and include, for example out: the multilayered structure etc. being only made up of, being laminated by the bond layer of individual layer, formed at the single or double of core material bond layer as die bonding film 3,3 ' (see Fig. 1, Fig. 2) the individual layer of bond layer.As aforementioned core material, resin substrate, silicon substrate or the glass substrate etc. of film (such as Kapton, polyester film, pet film, PEN film, polycarbonate film etc.) can be listed, strengthening with glass fibre or plastics non-woven fibre.When die bonding film is multilayered structure, aforementioned storage modulus etc. are counted within the scope of aforementioned value with the die bonding film entirety of multilayered structure.
As the adhesive composite forming aforementioned die bonding film 3,3 ', the composition having combinationally used thermoplastic resin and thermosetting resin can be listed.
As foregoing thermosetting resins, resol, aminoresin, unsaturated polyester resin, epoxy resin, urethane resin, silicone resin or thermoset polyimide resin etc. can be listed.These resins can be used alone or in combination two or more to use.The epoxy resin of the ionic impurity particularly preferably less containing meeting corrosion resistant semiconductor element etc.In addition, as the solidifying agent of epoxy resin, be preferably resol.
As long as the material that aforementioned epoxy resins is typically used as adhesive composite is just not particularly limited, such as, can use the difunctional epoxy resin of bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, three hydroxyphenyl methane types, four hydroxy phenyl ethane types etc. or the epoxy resin of polyfunctional epoxy resin or glycolylurea type, triglycidyl isocyanurate type or glycidic amine type etc.They can be used alone or in combination two or more to use.Among these epoxy resin, be particularly preferably phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, three hydroxyphenyl methane type resins or four hydroxy phenyl ethane type epoxy resin.This is because these epoxy resin are rich in the reactivity with the resol as solidifying agent, the excellences such as thermotolerance.
And then, aforementioned resol plays a role as the solidifying agent of aforementioned epoxy resins, include, for example out the novolak phenolics such as phenol resol resins, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, nonylphenol novolac resin; Resol type phenol resin, poly-to polyoxy vinylbenzene etc. such as oxygen vinylbenzene.These can be used alone or in combination two or more to use.Among these resol, be particularly preferably phenol resol resins, phenol aralkyl resin.This is because the connection reliability of semiconductor device can be improved.
About the compounding ratio of aforementioned epoxy resins and resol, such as, the mode reaching 0.5 ~ 2.0 equivalent with 1 equivalent every relative to the epoxy group(ing) in aforementioned epoxy resins composition of the hydroxyl in resol is compounding is suitable.Be preferably 0.8 ~ 1.2 equivalent.That is, this is because, when both compounding ratios depart from aforementioned range, cannot carry out sufficient curing reaction, the characteristic of epoxy resin cured product becomes easy deterioration.
As aforementioned thermoplastic resin, the saturated polyester resin such as polyamide resin, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin or the fluoro-resin etc. such as natural rubber, isoprene-isobutylene rubber, synthetic polyisoprene, chloroprene rubber, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, 6,6-nylon can be listed.These thermoplastic resins can be used alone or in combination two or more to use.Among these thermoplastic resins, be particularly preferably that ionic impurity is few, thermotolerance is high, can guarantee the acrylic resin of the reliability of semiconductor element.
As foregoing acrylic resin, be not particularly limited, the one kind or two or more polymkeric substance as composition (acrylic copolymer) etc. in the ester of the acrylic or methacrylic acid of the straight or branched alkyl with carbon number less than 30, especially carbon number 4 ~ 18 can be listed.As aforesaid alkyl, include, for example out methyl, ethyl, propyl group, sec.-propyl, normal-butyl, the tertiary butyl, isobutyl-, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl or dodecyl etc.
In the middle of aforesaid propylene acid resin, for the reason improving force of cohesion, particularly preferably acrylic copolymer.As aforesaid propylene acid copolymer, include, for example out the multipolymer of the multipolymer of the multipolymer of ethyl propenoate and methyl methacrylate, vinylformic acid and vinyl cyanide, butyl acrylate and vinyl cyanide.
The second-order transition temperature (Tg) of aforesaid propylene acid resin be preferably more than-30 DEG C and less than 30 DEG C, be more preferably more than-20 DEG C and less than 15 DEG C.By the second-order transition temperature of aforesaid propylene acid resin is set to more than-30 DEG C, thus die bonding film is hardening, and breaking property improves, and by being set to less than 30 DEG C, thus the wafer plyability under low temperature improves.Be more than-30 DEG C as second-order transition temperature and the acrylic resin of less than 30 DEG C, include, for example out SG-708-6 (second-order transition temperature: 6 DEG C), the SG-790 (second-order transition temperature :-25 DEG C) of Nagase Chemtex Corporation manufacture, WS-023 (second-order transition temperature :-5 DEG C), SG-80H (second-order transition temperature: 7.5 DEG C), SG-P3 (second-order transition temperature: 15 DEG C).
In addition, as other monomer forming aforementioned polymer, be not particularly limited, include, for example out vinylformic acid, methacrylic acid, carboxyethyl acrylates, vinylformic acid carboxyl pentyl ester, methylene-succinic acid, toxilic acid, the carboxyl group-containing monomer that fumaric acid or β-crotonic acid etc. are such, the anhydride monomers that maleic anhydride or itaconic anhydride etc. are such, (methyl) vinylformic acid 2-hydroxy methacrylate, (methyl) vinylformic acid 2-hydroxy propyl ester, (methyl) vinylformic acid 4-hydroxybutyl, the own ester of (methyl) vinylformic acid 6-hydroxyl, (methyl) vinylformic acid 8-hydroxyl monooctyl ester, (methyl) vinylformic acid 10-hydroxyl ester in the last of the ten Heavenly stems, the hydroxyl monomer that (methyl) vinylformic acid 12-hydroxylauric ester or vinylformic acid (4-Hydroxymethyl-cyclo-hexyl)-methyl esters etc. are such, styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, what (methyl) sulfopropyl acrylate or (methyl) propane sulfonic acid etc. were such contains sulfonic group monomer, or the phosphorous acid-based monomers that 2-hydroxyethyl acryloyl phosphate etc. are such.
As the compounding ratio of foregoing thermosetting resins, as long as the level played as the function of heat curing-type for die bonding film 3,3 ' when heating under prescribed conditions is just not particularly limited, is preferably in the scope of 5 ~ 60 % by weight, is more preferably in the scope of 10 ~ 50 % by weight.
Second-order transition temperature (Tg) before the thermofixation of aforementioned die bonding film 3,3 ' is preferably 25 ~ 60 DEG C, is more preferably 25 ~ 55 DEG C, more preferably 25 ~ 50 DEG C.By the second-order transition temperature before thermofixation is set to 25 ~ 60 DEG C, can stacked wafer well.It should be noted that, the mensuration of the second-order transition temperature before the thermofixation of die bonding film can be carried out according to following step.That is, die bonding film is overlapping to thickness 100 μm under the condition of 40 DEG C, cut off in the mode of the mensuration sheet becoming the strip of width 10mm.Then, use Measurement of Dynamic Viscoelasticity device (RSA (III), Rheometric Scientific, Inc. manufacture), the loss tangent (tan δ) measure-30 ~ 280 DEG C under the condition of frequency 10Hz, heat-up rate 5 DEG C/min at.The peak value of tan δ time thus obtains second-order transition temperature.
In the middle of aforementioned die bonding film 3,3 ', containing epoxy resin, resol and acrylic resin, the gross weight of aforementioned epoxy resins and aforementioned resol is set to X, when the weight of foregoing acrylic resin is set to Y, X/ (X+Y) is more than 0.3 and is preferred less than 0.9, be more preferably more than 0.35 and less than 0.85, more preferably more than 0.4 and less than 0.8.Along with the content of epoxy resin and resol increases, become easy fracture, on the other hand, the cementability bonding to semiconductor crystal wafer 4 reduces.In addition, along with the content of acrylic resin increases, when pasting, process time die bonding film 3,3 ' become and not easily crack, operability becomes good, on the other hand, becomes and is difficult to fracture.So, by X/ (X+Y) is set to more than 0.3, thus when utilizing Stealth Dicing to obtain semiconductor element 5 by semiconductor crystal wafer 4, become more easily make die bonding film 3,3 ' and semiconductor crystal wafer 4 rupture simultaneously.In addition, by making X/ (X+Y) less than 0.9, operability can be made good.
When making die bonding film 3,3 ' of the present invention be cross-linked with certain level in advance, the multi-functional compounds that carries out reacting with the functional group etc. of the molecule chain end of polymkeric substance can be added in advance as linking agent when making.Thereby, it is possible to the adhesion properties under raising high temperature, realize the improvement of thermotolerance.
As aforementioned crosslinking agent, existing known linking agent can be adopted.Especially, the polyisocyanate compounds such as the affixture of tolylene diisocyanate, diphenylmethanediisocyanate, PPDI, 1,5-naphthalene diisocyanate, polyvalent alcohol and vulcabond are more preferably.As the addition of linking agent, relative to 100 weight part aforementioned polymer, be usually preferably set to 0.05 ~ 7 weight part.When the amount of linking agent is more than 7 weight part, bonding force can reduce, thus not preferred.On the other hand, when being less than 0.05 weight part, force of cohesion is not enough, thus not preferred.In addition, also can with such polyisocyanate compound together, as required and in the lump containing other multi-functional compounds such as epoxy resin.
In addition, can according to the suitable compounding filler of its purposes in die bonding film 3,3 '.The compounding of filler makes the imparting of electroconductibility, the raising of thermal conductivity, the adjustment etc. of Young's modulus become possibility.As aforementioned filler, mineral filler and organic filler can be listed, from the view point of the characteristic such as raising, the adjustment of melt viscosity, thixotropic imparting of the raising of treatability, thermal conductivity, preferred mineral filler.As aforementioned inorganic filler, be not particularly limited, include, for example out aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesiumcarbonate, Calucium Silicate powder, Magnesium Silicate q-agent, calcium oxide, magnesium oxide, aluminum oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, amorphous silica etc.These can be used alone or in combination two or more to use.From the view point of raising thermal conductivity, preferential oxidation aluminium, aluminium nitride, boron nitride, crystalline silica, amorphous silica.In addition, good from the view point of the balance of above-mentioned each characteristic, preferred crystalline silica or amorphous silica.In addition, for the object of the imparting of electroconductibility, the raising of thermal conductivity etc., as mineral filler, conductive material (conductive filler material) can also be used.As conductive filler material, can list and silver, aluminium, gold, copper, nickel, electroconductibility alloy etc. are made spherical, metal oxide, amorphous carbon black, the graphite etc. such as needle-like, lepidiod metal powder, aluminum oxide.
The median size of aforementioned filler is preferably 0.005 ~ 10 μm, is more preferably 0.005 ~ 1 μm.This is because, by the median size of aforementioned filler is set to more than 0.005 μm, thus can make to the wetting wettability of adherend and cementability good.In addition, by being set to less than 10 μm, thus the effect in order to give the filler that above-mentioned each characteristic is added can be made abundant, and can thermotolerance be guaranteed.It should be noted that, the median size of filler is the value utilizing the size-grade distribution meter of luminosity formula (HORIBA manufactures, device name: LA-910) to obtain.
About die bonding film, when the gross weight of aforementioned epoxy resins and aforementioned resol and foregoing acrylic resin is set to A, the weight of aforementioned filler is set to B, B/ (A+B) be preferably more than 0.1 and less than 0.7, be more preferably more than 0.1 and less than 0.65, more preferably more than 0.1 and less than 0.6.By above-mentioned value is set to less than 0.7, thus can prevent storage tensile modulus from uprising, can make to the wetting wettability of adherend and cementability good.In addition, by above-mentioned value is set to more than 0.1, thus die bonding film can be made to rupture aptly because of tensile stress.
It should be noted that, in die bonding film 3,3 ', except aforementioned filler, can suitable other additive compounding as required.As other additive, include, for example out fire retardant, silane coupling agent or ion capturing agent etc.As foregoing flame retardants, include, for example out ANTIMONY TRIOXIDE SB 203 99.8 PCT, antimony pentaoxide, brominated epoxy resin etc.These can be used alone or in combination two or more to use.As aforementioned silane coupling agent, include, for example out β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, 3-glycidoxypropyl group triethoxyl silane, γ-glycidoxypropyl diethoxy silane etc.These compounds can be used alone or in combination two or more to use.As foregoing ion trapping agent, include, for example out hydrotalcite, bismuth hydroxide etc.These can be used alone or in combination two or more to use.
The thickness (being total thickness when duplexer) of die bonding film 3,3 ' is not particularly limited, such as, can select from the scope of 1 ~ 200 μm, be preferably 5 ~ 100 μm, be more preferably 10 ~ 80 μm.
The die bonding film 3,3 ' of aforementioned dicing/die bonding film 10,12 preferably protects (not shown) with barrier film.Barrier film has the function as the protecting materials of protect IC bonding film 3,3 ' till being supplied in practicality.In addition, barrier film can also use as to support base material during transfer printing die bonding film on binder layer 23,3 '.Barrier film is stripped when the die bonding film 3,3 ' to dicing/die bonding film above pastes workpiece.As barrier film, also can use polyethylene terephthalate (PET), polyethylene, polypropylene, utilize the stripper such as fluorine series stripping agent, long-chain aliphatic acrylate series stripping agent to carry out the plastics film, paper etc. of surface coated.
Preferably, the peeling force at 0 DEG C between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film is higher than the peeling force at 23 between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film DEG C for dicing/die bonding film 10,12.Thereby, it is possible to the separability of the chip of microarray strip bonding film when the confining force of semiconductor crystal wafer when making cutting and/or semiconductor element and pickup balances aptly.
For dicing/die bonding film 10,12, the peeling force at 0 DEG C between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film is preferably more than 0.15N/100mm and below 5N/100mm, be more preferably more than 0.20N/100mm and below 1N/100mm.When peeling force between cutting film and die bonding film is more weak, be peeling at the interface of die bonding film with cutting film when expanding, as its result, fracture semiconductor element that is bad, fracture occurs to disperse such unfavorable condition, the peeling force therefore at 0 DEG C is preferably more than above-mentioned lower limit.On the other hand, when peeling force is too high, sometimes there is fracture bad, be therefore preferably below the above-mentioned upper limit.
For dicing/die bonding film 10,12, the peeling force at 23 DEG C between aforementioned adhesion oxidant layer and aforementioned thermosetting die bonding film is preferably more than 0.05N/100mm and below 2.5N/100mm, be more preferably more than 0.10N/100mm and below 1N/100mm.In order to the semiconductor element of Self cleavage film pick-up tape die bonding film under normal temperature (23 ± 2 DEG C), preferably there is light separability.Particularly the semiconductor crystal wafer of Stealth Dicing is by slimming compared with the situation of blade cuts, becomes and easily cracks, and therefore requires the further reduction of peeling force.By peeling force is set to below the above-mentioned upper limit, thus good light separability can be played.On the other hand, peeling force is lower than above-mentioned in limited time lower, and the maintenance of semiconductor element when sometimes carrying becomes difficulty.It should be noted that, when binder layer is the type utilizing uviolizing and bounding force to reduce, the peeling force after uviolizing is in above-mentioned scope.
The manufacture method > of < dicing/die bonding film
The dicing/die bonding film 10,12 of present embodiment such as makes as follows.
First, base material 1 can utilize existing known film-forming method to carry out masking.As this film-forming method, such as, can exemplify calendering masking method, casting method in organic solvent, inflation extrusion molding, T die extrusion process, coetrusion, dry lamination method etc. in enclosed system.
Then, coating adhesive composition solution on base material 1 and after forming coated film, makes this coated film dry (carrying out heat cross-linking as required) under prescribed conditions, forms binder layer 2.As coating process, be not particularly limited, include, for example out roller coat, silk screen coating, rotogravure application etc.In addition, as drying conditions, such as, carry out in drying temperature 80 ~ 150 DEG C, the scope of 0.5 ~ 5 minute time of drying.In addition, also can on barrier film coating adhesive composition and after forming coated film, under aforementioned drying condition, make coated film dry and form binder layer 2.Then, binder layer 2 is pasted on base material 1 together with barrier film.Thus, cutting film 11 is made.Now, also can to cutting film and the sticking veneer of die bonding film carry out uviolizing in advance.
Die bonding film 3,3 ' such as makes as follows.
First, formation material and the adhesive composite solution of die bonding film 3,3 ' is made.Compounding as previously mentioned in this adhesive composite solution have aforementioned adhesive composite, filler, other various additives etc.
Then, adhesive composite solution be applied on base material barrier film with specific thickness and after forming coated film, make this coated film dry under prescribed conditions, forming bond layer.As coating process, be not particularly limited, include, for example out roller coat, silk screen coating, rotogravure application etc.In addition, as drying conditions, such as, carry out in drying temperature 70 ~ 160 DEG C, the scope of 1 ~ 5 minute time of drying.In addition, also can on barrier film coating adhesive composition solution and after forming coated film, under aforementioned drying condition, make coated film dry and form bond layer.Then, bond layer is pasted on base material barrier film together with barrier film.
Then, Self cleavage film 11 and bond layer peel off barrier film respectively, together with both paste by the mode becoming sticking veneer with bond layer and binder layer.Paste and such as can be undertaken by crimping.Now, laminating temperature is not particularly limited, such as, be preferably 30 ~ 50 DEG C, be more preferably 35 ~ 45 DEG C.In addition, line pressure is not particularly limited, such as, be preferably 0.1 ~ 20kgf/cm, be more preferably 1 ~ 10kgf/cm.Then, peel off the base material barrier film on bond layer, obtain the dicing/die bonding film of present embodiment.
When using rectangular base material to manufacture dicing/die bonding film, roll-to-roll method can be adopted aptly.The rectangular base material of wound into rolls is sent, the base material of conveying forms binder layer according to universal method, makes cutting film.Usually, after being covered with barrier film by binder layer, again web-like is coiled into.Then, barrier film is peeled off along with sending cutting film from this volume.Prepare the die bonding film be formed on barrier film separately, make the cutting film of conveying synchronous with die bonding film, die bonding film is pasted on the binder layer of cutting film simultaneously.Thus, the rectangular dicing/die bonding film being provided with die bonding film on the rectangular cutting film possessing strip substrate and binder layer is at predetermined intervals obtained.Also rectangular dicing/die bonding film can be coiled into web-like further, make the form of dicing/die bonding film coiling body.
When adopting roll-to-roll method, when carrying on base material during the stronger tension force of load, base material produces anisotropy, there is the anisotropic worry of tensile properties causing cutting film, dicing/die bonding film.From reducing the anisotropic viewpoint of base material, tension force during conveying is preferably more than 0.01N/mm and below 1N/mm, be more preferably more than 0.05N/mm and below 0.5N/mm.
The manufacture method > of < semiconductor device
Then, limit is described with reference to the manufacture method of Fig. 3 ~ Fig. 6 limit for the semiconductor device using dicing/die bonding film 12.Fig. 3 ~ Fig. 6 is the schematic cross-section of a kind of manufacture method of semiconductor device for illustration of present embodiment.First, to the segmentation preset lines 4L irradiating laser of semiconductor crystal wafer 4, segmentation preset lines 4L forms modification area.Present method is: to the internal alignment focal point of semiconductor crystal wafer, along cancellate segmentation preset lines irradiating laser, utilizes the ablation based on multiphoton absorption to form the method for modification area in the inside of semiconductor crystal wafer.As laser irradiation condition, suitably adjust in following condition and range.
(laser irradiation condition)
(A) laser
(B) optically focused lens
Multiplying power less than 100 times
NA 0.55
For the transmitance less than 100% of optical maser wavelength
(C) below the translational speed 280mm/ second of mounting table loading semiconductor substrate
It should be noted that, on segmentation preset lines 4L, form the method for modification area about irradiating laser, have a detailed description in Japanese Patent No. 3408805 publication, Japanese Unexamined Patent Publication 2003-338567 publication, therefore here detailed.
Then, as shown in Figure 4, the semiconductor crystal wafer 4 after die bonding film 3 ' upper crimping modification area is formed, makes its bonding maintenance and is fixed (installation procedure).This operation utilizes the press device pressings such as crimping roller while carry out.Sticking temperature during installation is not particularly limited, and is preferably in the scope of 40 ~ 80 DEG C.This is because, effectively can prevent the warpage of semiconductor crystal wafer 4, and the flexible impact of dicing/die bonding film can be reduced.
Then, by applying tensile stress to dicing/die bonding film 12, thus making semiconductor crystal wafer 4 and die bonding film 3 ' along segmentation preset lines 4L fracture, forming semi-conductor chip 5 (chip formation process).In this operation, such as, commercially available wafer expanding unit can be used.Specifically, as shown in (a) of Fig. 5, after binder layer 2 periphery of the dicing/die bonding film 12 being pasted with semiconductor crystal wafer 4 pastes cut ring 31, be fixed on wafer expanding unit 32.Then, as shown in (b) of Fig. 5, make pushed section 33 increase, tension force is applied to dicing/die bonding film 12 and expands.
This chip formation process is preferably carried out under the condition of-20 DEG C ~ 15 DEG C, more preferably carries out under the condition of-20 DEG C ~ 5 DEG C, more preferably carries out under the condition of-15 DEG C ~ 0 DEG C.By carrying out chip formation process under the cold condition that above-mentioned scope is such, thus efficiency can carry out the fracture of die bonding film 3 ' well, its result, can improve manufacture efficiency.
In addition, in chip formation process, propagation rate (speed that upper pushed section rises) is preferably 100 ~ 400mm/ second, be more preferably 100 ~ 350mm/ second, more preferably 100 ~ 300mm/ second.By propagation rate is set to more than above-mentioned lower limit, thus can makes semiconductor crystal wafer 4 and die bonding film 3 ' roughly simultaneously and easily rupture.In addition, by propagation rate is set to below the above-mentioned upper limit, thus can prevent cutting film 11 from rupturing.
In addition, in chip formation process, propagation is preferably 6 ~ 12%.Previous extension amount suitably adjusts according to the chip size that will be formed within the scope of aforementioned value.It should be noted that, in present embodiment, propagation refers to, the value (%) of the surface-area surface-area of cutting film before expansion is set to 100%, increasing because of expansion.By propagation is set to more than 6%, thus the fracture of semiconductor crystal wafer 4 and die bonding film 3 is made to become easy.In addition, by propagation is set to less than 12%, thus can prevent cutting film 11 from rupturing.
So, by applying tensile stress to dicing/die bonding film 12, thus can crack on the thickness direction of semiconductor crystal wafer 4 using the modification area of semiconductor crystal wafer 4 as starting point, and the die bonding film 3 ' closely sealed with semiconductor crystal wafer 4 is ruptured, the semi-conductor chip 5 of microarray strip bonding film 3 ' can be obtained.
Then, in order to be peeled off by the semi-conductor chip 5 being bonded and fixed to dicing/die bonding film 12, the pickup (pickup process) of semi-conductor chip 5 is carried out.As the method for pickup, be not particularly limited, existing known various method can be adopted.Include, for example out: utilize eedle by each semi-conductor chip 5 Self cleavage/die bonding film 12 side jack-up, utilize pickup device to pick up by the method etc. of the semi-conductor chip 5 of jack-up.
Herein, about pickup, because binder layer 2 is ultraviolet hardening, therefore carry out after to this binder layer 2 irradiation ultraviolet radiation.Thus, the bounding force of binder layer 2 pairs of die bonding films 3 ' reduces, and the stripping of semi-conductor chip 5 becomes easy.Its result, can not damage semi-conductor chip 5 ground and pick up.The conditions such as exposure intensity during uviolizing, irradiation time are not particularly limited, and suitably set as required.It should be noted that, on the cutting film being used in ultraviolet curing during the dicing/die bonding film of adhering chip bonding film, do not need uviolizing herein.
Then, as shown in Figure 6, picked up semi-conductor chip 5 is clipped die bonding film 3 ' chip join in adherend 6 (temporary transient set operation).As adherend 6, the semi-conductor chip etc. that can list lead frame, TAB film, substrate or make separately.Adherend 6 can be such as the deformation type adherend of easily distortion, also can for being difficult to the non-deformed type adherend (semiconductor crystal wafer etc.) be out of shape.
As aforesaid base plate, existing known substrate can be used.In addition, as aforementioned lead frame, the organic substrate die-attach area such as Cu lead frame, 42 alloy lead wire frames can be used, being formed by glass epoxide, BT (bismaleimide-triazine), polyimide etc.But the present invention is not limited to this, also comprises the semiconductor element that can be adhesively fixed, being electrically connected with semiconductor element fetches the circuit substrate of use.
Shear bond power at 25 DEG C during the temporary transient set of die bonding film 3 ' is preferably more than 0.2MPa for adherend 6, is more preferably 0.2 ~ 10MPa.When the shear bond power of die bonding film 3 is at least more than 0.2MPa, when wire-bonded operation, because of the ultrasonic vibration in this operation, heating and to produce the situation of shearing strain at the bonding plane of die bonding film 3 and semi-conductor chip 5 or adherend 6 less.That is, the situation of movement is less because of ultrasonic vibration during wire-bonded for semiconductor element, prevents the success ratio of wire-bonded from reducing thus.In addition, the shear bond power at 175 DEG C during the temporary transient set of die bonding film 3 ' is preferably more than 0.01MPa for adherend 6, is more preferably 0.01 ~ 5MPa.
Then, the wire-bonded (wire-bonded operation) utilizing bonding wire 7 to be electrically connected with the electrode pad (not shown) on semi-conductor chip 5 front end of the portion of terminal (inner lead) of adherend 6 is carried out.As aforementioned bonding wire 7, include, for example out gold thread, aluminum steel or copper cash etc.About temperature when carrying out wire-bonded, 80 ~ 250 DEG C, preferably carry out in the scope of 80 ~ 220 DEG C.In addition, about its heat-up time, carry out several seconds ~ several minutes.Wiring is by carrying out at the crimping energy being heated to combinationally use under the state in foregoing temperature range the vibrational energy that brought by ultrasonic wave and bring by applying to pressurize.This operation is carried out with can not carrying out the thermofixation of die bonding film 3a.In addition, do not utilize die bonding film 3a by semi-conductor chip 5 and adherend 6 set in the process of this operation.
Then, potting resin 8 packaged semiconductor 5 (packaging process) is utilized.This operation is carried out to protect semi-conductor chip 5, the bonding wire 7 being equipped on adherend 6.This operation is by utilizing mould molding to carry out by the resin of encapsulation.As potting resin 8, such as, use the resin of epoxy.About Heating temperature during resin package, usually at 175 DEG C, carry out 60 ~ 90 seconds, but the present invention is not limited to this, such as, can solidifies several minutes at 165 ~ 185 DEG C.Thus, potting resin is solidified, and clip die bonding film 3 by semi-conductor chip 5 and adherend 6 set.That is, in the present invention, even if when not carrying out after fixing operation described later, die bonding film 3 also can be utilized in this operation to carry out set, the shortening of the minimizing of worker ordinal number and the manufacture phase of semiconductor device can be contributed to.
In aforementioned after fixing operation, make in aforementioned encapsulation operation, solidify insufficient potting resin 8 and solidify completely.Even if when packaging process chips bonding film 3a does not have complete thermofixation, potting resin 8 and the complete thermofixation of die bonding film 3a also can be made in this operation.Heating temperature in this operation is different according to the kind of potting resin, such as, be that in the scope of 165 ~ 185 DEG C, heat-up time is 0.5 ~ 8 hours.
In above-mentioned embodiment, the situation making after the semi-conductor chip 5 of microarray strip bonding film 3 ' is temporarily bonded to adherend 6 die bonding film 3 ' not carry out to thermofixation wire-bonded operation is completely illustrated.But, in the present invention, also can carry out following common chip join operation: on adherend 6 temporary transient set microarray strip bonding film 3 ' semi-conductor chip 5 after, make die bonding film 3 ' thermofixation, then, carry out wire-bonded operation.Now, the die bonding film 3 ' after thermofixation preferably have at 175 DEG C more than 0.01MPa shear bond power, be more preferably 0.01 ~ 5MPa.This is because, by the shear bond power at 175 after thermofixation DEG C is set to more than 0.01MPa, thus can prevent due to ultrasonic vibration during wire-bonded operation, heating and produce shearing strain at die bonding film 3 ' and the bonding plane of semi-conductor chip 5 or adherend 6.
It should be noted that, dicing/die bonding film of the present invention also can be suitably used for stacked for multiple semi-conductor chip and carry out three-dimensional situation of installing.Now, can between semi-conductor chip stacked die bonding film and spacer, also can between semi-conductor chip only stacked die bonding film and not stacked spacer, suitably can change according to manufacturing condition, purposes etc.
Embodiment
Below, suitable embodiment of the present invention is described illustratively in detail.But the material recorded in this embodiment, compounding amount etc. so long as not the record of being particularly limited to property, then have no intent to main idea of the present invention to be defined in these.
< embodiment 1 ~ 3 and comparative example 1 ~ 2>
< cuts the manufacture > of film
(Production Example 1)
2-EHA (2EHA) 76 parts, vinylformic acid 2-hydroxy methacrylate (HEA) 24 parts and benzoyl peroxide 0.2 part and toluene 60 parts is added in the reaction vessel possessing prolong, nitrogen ingress pipe, thermometer and whipping appts, in stream of nitrogen gas, at 61 DEG C, carry out 6 hours aggregation processing, obtain acrylic polymers A.The mol ratio of 2EHA and HEA is set to 100mol and compares 20mol.
2-methacryloxyethyl isocyanic ester (hereinafter referred to as " MOI ") 10 parts (be 80mol% relative to HEA) is added in this acrylic polymers A, in air draught, at 50 DEG C, carry out addition reaction process in 48 hours, obtain acrylic polymers A '.
Then, relative to 100 parts of acrylic polymers A ', add isocyanate-based linking agent (trade(brand)name " CORONATE L ", Japanese polyurethane Co., Ltd. manufactures) 6 parts and Photoepolymerizationinitiater initiater (trade(brand)name " IRGACURE 651 ", Ciba Specialty Chemicals Corp manufactures) 4 parts, make binder solution.
The binder solution of aforementioned preparation is applied to the enforcement of PET release liner organosilicon process face on, heat cross-linking 2 minutes at 120 DEG C, forms the binder layer precursor of thickness 30 μm.Then, prepare the base material film with the thickness 80 μm of 2 Rotating fields of polypropylene layer and polyethylene layer, paste base material film using polypropylene layer as sticking veneer on the surface at this adhesive precursor.Then, preserve 24 hours at 50 DEG C.Only to part (diameter 220mm) irradiation ultraviolet radiation being equivalent to semiconductor crystal wafer adhesive portion (diameter 200mm) of binder layer precursor, form binder layer.Thus, the cutting film A of this Production Example is made.It should be noted that, illuminate condition is as described below.
< ultraviolet irradiation condition >
Ultraviolet (UV) irradiating unit: high voltage mercury lamp
Uviolizing accumulated light: 500mJ/cm
2
Power: 120W
Exposure intensity: 200mW/cm
2
(Production Example 2)
As base material film, prepare the base material film with the thickness 100 μm of 2 Rotating fields of polypropylene layer and polyethylene layer, aforementioned adhesion agent precursor surface pastes base material film using polypropylene layer as sticking veneer, to operate in addition equally with Production Example 1, make cutting film B.
(Production Example 3)
As base material film, prepare to have the base material film by the thickness 40 μm of 1 Rotating fields of polypropylene and polyethylene blend, its and aforementioned adhesion agent precursor surface are pasted, to operate in addition equally with Production Example 1, film C is cut in making.
(Production Example 4)
As base material film, prepare to have the base material film of thickness 90 μm of 3-tier architecture of polypropylene and poly blended layer, vinyl-vinyl acetate copolymer layer and polypropylene and poly blended layer, aforementioned adhesion agent precursor surface pastes base material film using any blended layer as sticking veneer, in addition equally with Production Example 1 to operate, make cutting film D.
The manufacture > of < die bonding film
(Production Example 5)
Following (a) ~ (d) is dissolved in methylethylketone, obtains the adhesive composite solution of concentration 23.6 % by weight.
(a) acrylic ester polymer using ethyl propenoate-methyl methacrylate as main component (Nagase Chemtex Corporation manufactures, SG-P3, second-order transition temperature: 15 DEG C)
48 weight parts
(b) epoxy resin (Toto Kasei KK manufactures, KI-3000, epoxy equivalent (weight) 105, softening temperature 70 DEG C)
6 weight parts
(c) resol (bright and change into Co., Ltd. manufacture, MEH-7800M, hydroxyl equivalent 175)
6 weight parts
(d) filler (ADMATECHS CO., LTD. manufacture, SO-E2, melting spherical silicon dioxide, median size 0.5 μm)
40 weight parts
After this adhesive composite solution coat is upper to the demoulding process film (release liner) formed by the pet film through the thickness of silicone release process being 50 μm, at 130 DEG C dry 2 minutes.Thus, the die bonding film A of thickness 10 μm is made.
(Production Example 6)
Following (a) ~ (e) is dissolved in methylethylketone, obtains the adhesive composite solution of concentration 23.6 % by weight.
(a) acrylic ester polymer using ethyl propenoate-methyl methacrylate as main component (Nagase Chemtex Corporation manufactures, SG-P3, second-order transition temperature: 15 DEG C)
32 weight parts
(b) epoxy resin (Toto Kasei KK manufactures, KI-3000, epoxy equivalent (weight) 105, softening temperature 70 DEG C)
4 weight parts
(c) resol (bright and change into Co., Ltd. manufacture, MEH-7800M, hydroxyl equivalent 175)
4 weight parts
(d) filler (ADMATECHS CO., LTD. manufacture, SO-E2, melting spherical silicon dioxide, median size 0.5 μm) 60 weight parts
(e) silane coupling agent (Shin-Etsu Chemial Co., Ltd manufactures, KBM-403) 0.05 weight part
After this adhesive composite solution coat is upper to the demoulding process film (release liner) formed by the pet film through the thickness of silicone release process being 50 μm, at 130 DEG C dry 2 minutes.Thus, the die bonding film B of thickness 10 μm is made.
The manufacture > of < dicing/die bonding film
According to the combination shown in table 1, die bonding film and cutting film are pasted under laminating temperature 40 DEG C, line pressure 2kgf/cm, they is denoted as respectively the dicing/die bonding film A ~ E of embodiment and comparative example.
The storage modulus of 23 DEG C (mensuration)
For cutting film A ~ D, the MD direction at measuring 23 DEG C respectively and the storage modulus in TD direction.Specifically, with cutters, cutting film is cut into 10mm width × 50mm length, uses Autograph (Shimadzu Seisakusho Ltd. manufactures, AGS-J), measure under chuck spacing 10mm, draw speed 50mm/min.The value in elongation 3% moment is used to obtain storage modulus by the SS curve obtained.Calculate the value that used thickness of sample uses the total of the thickness of base material and binder layer.Show the result in table 1.
The storage modulus of 0 DEG C (mensuration)
For cutting film A ~ D, the MD direction at measuring 0 DEG C respectively and the storage modulus in TD direction.Specifically, with cutters, cutting film is cut into 10mm width × 50mm length, uses Autograph (Shimadzu Seisakusho Ltd.'s manufacture), measure under chuck spacing 10mm, draw speed 50mm/min.The value in elongation 3% moment is used to obtain storage modulus by the SS curve obtained.Calculate the value that used thickness of sample uses the total of the thickness of base material and binder layer.Show the result in table 1.
(confirmation of breaking property)
As laser processing device, use the ML300-Integration that Tokyo Seimitsu Co., Ltd manufactures, to the internal alignment light harvesting point of semiconductor crystal wafer, along the segmentation preset lines of reticulation (10mm × 10mm) from the face side irradiating laser of semiconductor crystal wafer, form modification area in the inside of semiconductor crystal wafer.Semiconductor crystal wafer uses Silicon Wafer (thickness 75 μm, external diameter 12 inches).In addition, laser irradiation condition carries out as described below.
(A) laser
(B) optically focused lens
Multiplying power 50 times
NA 0.55
For the transmitance 60% of optical maser wavelength
(C) the translational speed 100mm/ second of the mounting table of semiconductor substrate is loaded
After each dicing/die bonding film A ~ E is pasted respectively and utilizes laser to carry out the semiconductor crystal wafer of pre-treatment, carry out tearing test.Tearing test is carried out under the condition of extended temperature 0 DEG C.Propagation rate is set to 400mm/ second, propagation is set to 6%.As the result of expansion, for central part 100 chips of semiconductor crystal wafer, the chip number that counting chip and die bonding film rupture well along segmentation preset lines, obtains its ratio.Show the result in table 1.
(peeling force mensuration)
On made dicing/die bonding film in die bonding film side at normal temperatures Continuous pressing device for stereo-pattern (Nitto Denko Corp manufacture, trade(brand)name; BT-315) strengthen.100mm width × 120mm length is cut into cutters.Then, by the binder layer of cutting film and die bonding film clamping, at 0 DEG C and 23 DEG C, using tensile testing machine respectively, (Shimadzu Scisakusho Ltd manufactures, trade(brand)name; AGS-J) read with the power (ultimate load, unit: N/100mm) when peeling rate 300mm/min, T-shaped stripping test release adhesive oxidant layer and die bonding film.Show the result in table 1.
table 1
The breaking property based on laser cutting of the dicing/die bonding film of embodiment is good.In addition, obtain following result, the peeling force at 0 DEG C is high, and the retentivity of semiconductor crystal wafer is excellent, and on the other hand, the peeling force at 23 DEG C is low, and pick is excellent.On the other hand, the dicing/die bonding film of comparative example 1 and 2 is large due to the deviation of the physical property in TD direction and MD direction, therefore obtains the result of the breaking property difference based on laser cutting.
Claims (9)
1. cut a film, it possesses base material and is arranged at the binder layer on this base material,
The storage modulus in the MD direction obtained by the stress-strain curve at MD direction and each comfortable 0 DEG C of TD direction during load tensile stress is set to E '
mD1, TD direction storage modulus be set to E '
tD1time, E '
mD1/ E '
tD1be more than 0.75 and less than 1.25.
2. cutting film according to claim 1, wherein, described storage modulus E '
mD1with described storage modulus E '
tD1the absolute value of difference be more than 1 and less than 50.
3. cutting film according to claim 1, wherein, described storage modulus E '
mD1with described storage modulus E '
tD1in at least one be more than 10MPa and below 100MPa.
4. a dicing/die bonding film, it possesses cutting film according to claim 1 and is arranged at the thermosetting die bonding film on the binder layer of this cutting film.
5. dicing/die bonding film according to claim 4, wherein, the peeling force at 0 DEG C between described binder layer and described thermosetting die bonding film is higher than the peeling force at 23 between described binder layer and described thermosetting die bonding film DEG C.
6. dicing/die bonding film according to claim 5, wherein, the peeling force at 0 DEG C between described binder layer and described thermosetting die bonding film is more than 0.15N/100mm and below 5N/100mm.
7. dicing/die bonding film according to claim 5, wherein, the peeling force at 23 DEG C between described binder layer and described thermosetting die bonding film is more than 0.05N/100mm and below 2.5N/100mm.
8. the dicing/die bonding film according to any one of claim 4 ~ 7, it is for semiconductor crystal wafer irradiating laser after forming modification area, described semiconductor crystal wafer is ruptured along described modification area, thus obtains the manufacture method of the semiconductor element of semiconductor element.
9. a manufacture method for semiconductor device, it comprises following operation:
To the segmentation preset lines irradiating laser of semiconductor crystal wafer, form the operation of modification area along described segmentation preset lines;
Semiconductor crystal wafer after being formed by modification area is pasted on the operation of the dicing/die bonding film according to any one of claim 4 ~ 8;
Under the condition of-20 DEG C ~ 15 DEG C, tensile stress is applied to described dicing/die bonding film, thus the die bonding film of described semiconductor crystal wafer and described dicing/die bonding film is ruptured along described segmentation preset lines, form the operation of semiconductor element;
By the operation that described semiconductor element picks up together with described die bonding film; And
The described semiconductor element of pickup is clipped described die bonding film chip join in the operation of adherend.
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| JP2014-074017 | 2014-03-31 | ||
| JP2014074017A JP6312498B2 (en) | 2014-03-31 | 2014-03-31 | Dicing film, dicing die-bonding film, and semiconductor device manufacturing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201539586A (en) | 2015-10-16 |
| KR20220050110A (en) | 2022-04-22 |
| JP2015198118A (en) | 2015-11-09 |
| TWI660436B (en) | 2019-05-21 |
| KR102493750B1 (en) | 2023-02-06 |
| CN104946152B (en) | 2022-10-21 |
| KR20150113878A (en) | 2015-10-08 |
| KR102386082B1 (en) | 2022-04-14 |
| JP6312498B2 (en) | 2018-04-18 |
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