CN103794530B - Dicing/die bonding film with partition - Google Patents

Dicing/die bonding film with partition Download PDF

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Publication number
CN103794530B
CN103794530B CN201310499530.0A CN201310499530A CN103794530B CN 103794530 B CN103794530 B CN 103794530B CN 201310499530 A CN201310499530 A CN 201310499530A CN 103794530 B CN103794530 B CN 103794530B
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China
Prior art keywords
die bonding
partition
bonding film
projecting piece
dicing
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CN201310499530.0A
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CN103794530A (en
Inventor
菅生悠树
村田修平
大西谦司
木村雄大
柳雄朗
柳雄一朗
井上刚
井上刚一
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Nitto Denko Corp
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)

Abstract

The present invention relates to the dicing/die bonding films with partition.The present invention provides the dicing/die bonding film with partition for being easy that dicing/die bonding film is removed from partition.A kind of dicing/die bonding film with partition by peripheral part by partition, when looking down there is die bonding film and the cutting film of the projecting piece protruded outward to obtain with sequence stacking.

Description

Dicing/die bonding film with partition
Technical field
The present invention relates to the dicing/die bonding films with partition.
Background technique
In the past, thin using thermosetting die engagement is laminated on cutting film in the manufacturing process of semiconductor device The dicing/die bonding film (for example, referenced patent document 1) of film.It is filled using the semiconductor of the dicing/die bonding film In the manufacturing process set, semiconductor wafer is fitted on dicing/die bonding film be fixed first, and in this state It is cut.Semiconductor wafer turns to defined size by small pieces as a result, becomes semiconductor chip.Then, in order to will be fixed on Semiconductor chip on dicing/die bonding film is removed from cutting film, carries out the pickup of semiconductor chip.Then, will The semiconductor chip being picked together with die bonding film is fixed on the adherends such as substrate by die bonding film.
For above-mentioned dicing/die bonding film, respectively it is punched according to the size of semiconductor wafer as circle Deng cutting film and die bonding film be laminated.Dicing/die bonding film with die bonding film be fitting side with Defined interval is configured on the partition of long size.When being bonded with semiconductor wafer, using device for mounting wafer etc. by cutting/core Chip bonding film is removed from partition, then pastes semiconductor die on piece.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2008-218571 bulletin
Summary of the invention
Partition has generally been carried out at demoulding to improve the fissility of dicing/die bonding film using release agent etc. Reason.But when removing dicing/die bonding film from partition, the removing between partition and die bonding film cannot sometimes Successfully carry out, it sometimes only will cutting film removing in the state that die bonding film remains on partition.
The present invention is founded in view of foregoing problems, and its purpose is to provide dicing/die bonding films to be easy from partition The dicing/die bonding film with partition of removing.
Present inventor is studied to solve foregoing problems, as a result, it has been found that, by using following compositions, It can solve foregoing problems, so as to complete the present invention.
That is, the present invention relates to a kind of dicing/die bonding film with partition, outside by partition, when looking down There is circumference die bonding film and the cutting film of the projecting piece protruded outward to be obtained with sequence stacking.
In the dicing/die bonding film (hereinafter also referred to " film with partition ") with partition, die bonding film Peripheral part when looking down has the projecting piece (hereinafter sometimes referred to simply as " projecting piece ") that protrudes outward, therefore from being formed with When the side removing of projecting piece, which becomes the starting point of removing, as a result can be easy to carry out dicing/die bonding film From the removing on partition.On the other hand, in the case where die bonding film does not have projecting piece, as die bonding film The region of stripping starting point is in the state closer to straight line, (is incited somebody to action in the stress that removing initial stage die bonding film is subject to from partition The stress that die bonding film is pulled toward partition side.Hereinafter also referred to " drawing stress ") become larger, previous removing is generated sometimes Undesirable condition.
In the film with partition, the preferably described projecting piece has the front end of taper.As a result, the front end of projecting piece with The contact area of partition becomes smaller, and can reduce the drawing stress from partition, and it is thin can more easily to remove dicing/die engagement Film.
In the film with partition, the projecting piece preferably has the front end of V-arrangement.By the way that the front end of projecting piece is set Be set to V-arrangement, can keep projecting piece mechanical strength while reduce the drawing stress from partition, and it is available with Straight line forms the easy structure of front end, and therefore, the formation of projecting piece becomes easy.
In the film with partition, the interior angle of the front end of the V-arrangement is preferably 30 ° or more and 90 ° or less.As a result, may be used To further decrease the drawing stress from partition, can make dicing/die bonding film from the removing on partition better It carries out.
In the film with partition, on the direction vertical with the stretching direction of the projecting piece, the root of the projecting piece Minimum diameter distance be preferably smaller than the projecting piece root and front end between middle part maximum gauge distance.Pass through Be thusly-formed the shape for making the root constriction of projecting piece, though removing when projecting piece front end (and middle part) remain in every Piece side, the stress of removing when root carries out is crossed in removing, and (from the front end of projecting piece, the drawing that middle part is subject to from partition answers Power and the region of root is crossed (that is, the region other than the projecting piece of die bonding film.Hereinafter, the region is also known as chip " base portion " of bonding film) the sum of the stress that is raised) it can be concentrated in root also to cut off root.As a result, can stretch The new stripping starting point of base portion is nearby arranged in the place of incision of slice, can inhibit the production of the undesirable condition of removing as much as possible It is raw.
In the film with partition, the minimum diameter distance of the root is preferably 1mm or less.Thus, it is possible to promote to shell From the cutting for crossing root when root carries out, the new removing since base portion can be readily facilitated.
In the film with partition, the partition can be the partition of long size.By on the partition of long size to advise Fixed interval configures multiple dicing/die bonding films, can work continuously, so as to improve the manufacture effect of semiconductor device Rate.
In the film with partition, the projecting piece is preferably configured along the length direction of the long size partition.From releasing The dicing/die bonding film with long size partition on when dicing/die bonding film is continuously removed, if stretched out Piece is configured along the length direction of long size partition, then peeling direction is parallel with the length direction of long size partition, therefore can be high It is continuously removed on effect ground.
In the film with partition, on the die bonding film, the periphery of the die bonding film when looking down A part be formed with using two points on the peripheries of clip the projecting piece on the periphery two stretching starting points as It stretches out starting point and stretches out starting point as the taper extension for stretching out forward terminal using two of the projecting piece, be separately connected described stretch The two lines section that two of slice stretch out two stretching starting points of starting point and the extension is preferably placed at through the projecting piece Two of any one and the extension of the two stretching starting points circular arcs for stretching out starting point these three points inside.The party In formula, it may be said that be that the peripheral shape of die bonding film itself is formed as the relatively large extension of taper and is stretched with this Two sections of compositions of the relatively small projecting piece of the front end portion connection in portion out.By using such composition, by cutting/core When chip bonding film is removed from partition, though the removing of projecting piece without, removing cross projecting piece root (or stretch out Starting point) when, it can also cause to remove in the extension for reducing the drawing stress from partition and being formed as taper, it can be with Inhibit the generation of the undesirable condition of unexpected removing as much as possible.
In the film with partition, connects the stretching starting point of the extension and stretch out forward terminal (that is, the stretching of projecting piece Starting point) the two lines section be preferably straight line.It is come from thus, it is possible to be readily formed extension and can be effectively reduced The drawing stress of partition.
In the film with partition, the two lines section angulation is preferably 120 ° or more and 175 ° or less.Pass through This composition can be effectively reduced the drawing stress from partition, while can fully ensure in die bonding film and be used for Paste the effective area of semiconductor wafer.
The cutting film has the adhesive phase of substrate and stacking on the substrate, in the described viscous of the cutting film The die bonding film is laminated in mixture layer.
Detailed description of the invention
Figure 1A is the schematic sectional for indicating the dicing/die bonding film with partition of an embodiment of the invention Figure.
Figure 1B is the perspective top for indicating the die bonding film of the dicing/die bonding film shown in figure 1A with partition Figure.
Fig. 2 is the part enlarged plan view for indicating the projecting piece of die bonding film of an embodiment of the invention.
Fig. 3 is the semiconductor for indicating the dicing/die bonding film with partition using an embodiment of the invention The schematic sectional view of one process of the manufacturing process of device.
Fig. 4 is the die bonding film installation half indicated through the dicing/die bonding film shown in figure 1A with partition The schematic sectional view of the example of conductor chip.
Fig. 5 A is the enlarged plan view for indicating a part of die bonding film of another embodiment of the present invention.
Fig. 5 B is to indicate that the chip engagement of the dicing/die bonding film with partition of another embodiment of the present invention is thin The perspective plan view of film.
Fig. 6 A is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 B is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 C is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 D is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 E is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 F is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 G is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 H is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 I is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 J is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 K is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 L is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Fig. 6 M is the part enlarged plan view for indicating the projecting piece of die bonding film of another embodiment of the present invention.
Label declaration
1 substrate
2 adhesive phases
3 die bonding films
3a, 33a~33l projecting piece
3A extension
4 semiconductor wafers
5 semiconductor chips
6 adherends
7 bonding wires
8 sealing resins
10 dicing/die bonding films with partition
11 cutting films
12 dicing/die bonding films
14 partitions
Specific embodiment
<first embodiment>
[dicing/die bonding film with partition]
The dicing/die engagement with partition of first embodiment as an embodiment of the present invention is thin below Film is illustrated.Figure 1A is to indicate that the signal of the dicing/die bonding film with partition of an embodiment of the invention is cutd open View, Figure 1B are its perspective plan views.Fig. 2 is to indicate that the part amplification of the projecting piece of die bonding film shown in Figure 1B is overlooked Figure.
As shown in FIG. 1A and 1B, the dicing/die bonding film 10 with partition have on the partition 14 of long size according to It is secondary to be laminated with the composition for overlooking as circular die bonding film 3 and cutting film 11.Utilize these 3 Hes of die bonding film It cuts film 11 and constitutes dicing/die bonding film 12.In addition, in Figure 1B, for ease of description, cutting film 11 not shown, The die bonding film 3 for illustrating only the partition 14 of long size and being laminated thereon.Cutting film 11 passes through on 1 upper layer of substrate It folds adhesive phase 2 and constitutes, the die bonding film 3 that diameter is less than cutting film 11 is laminated on adhesive phase 2.It cuts thin Film 11 is layered on partition 14 in the mode opposite with die bonding film 3 of adhesive phase 2.In addition, cutting film 11 exceeds The part of the periphery of die bonding film 3 can not contacted with partition 14 as shown in Figure 1A, can also be contacted with partition 14.
Although it is not shown, still, in the dicing/die bonding film 10 with partition of present embodiment, long size every Multiple dicing/die bonding films 12 are configured on piece 14 at predetermined intervals.It is connect thus, it is possible to continuously carry out dicing/die It closes film 12 and is bonded from the removing on partition 14 with and subsequent with semiconductor wafer, can be improved the manufacture of semiconductor device Efficiency.From the viewpoint of it can continuously release, the dicing/die bonding film 10 with partition of long size, which can be, to be wound as Scroll-like coiling body.In addition, the dicing/die bonding film with partition can be following form: multiple die bonding films It is configured on the partition of long size at predetermined intervals, the cutting film of long size is to cover the sides of these multiple die bonding films Formula stacking.
(partition)
Long size partition 14 has as the protection materials for protecting die bonding film 3 before supplying practical application Function etc..In addition, long size partition 14 is also used as branch support group when die bonding film 3 is transferred on adhesive phase 2 Material.Long size partition 14 is stripped when pasting workpiece on die bonding film 3.As the material of long size partition 14, Polyethylene terephthalate (PET), polyethylene, polypropylene can be enumerated and utilize fluorine-containing type remover, chain alkyl Plastic film or paper after the removers coating surface such as esters of acrylic acid remover etc..In addition, partition can be such as present embodiment It show long size objects, or be when looking down in roughly circular in the same manner as cutting film 11 and there is same degree Size shape.
The thickness of long size partition 14 is not particularly limited, preferably 25~100 μm, more preferable 25~75 μm, further excellent Select 35~60 μm.By being set as above range, the intensity as protection materials can be kept, and can easily make band The coiling body of the dicing/die bonding film 10 of partition.
(die bonding film)
As shown in Figure 1B, there is the projecting piece 3a protruded outward in the peripheral part of die bonding film 3 when looking down.Separately Outside, cutting film 11 is laminated in a manner of covering comprising the entire die bonding film including projecting piece 3a.In addition, chip connects A projecting piece 3a can be had as shown in Figure 1B by closing film 3a, it is possible to have more than two multiple projecting piece 3a.
(projecting piece)
As shown in Fig. 2, projecting piece 3a is with from two stretching starting point E on peripherya、EaPlay the protrusion on the outside of stretching direction Z-direction The mode that ground stretches out is formed.Stretch out starting point Ea、EaIt is the point stretched out since the outer outer circumferential of the base portion of die bonding film 3. Clip the stretching starting point E of die bonding film 3a、Ea, the part of the side opposite with projecting piece 3a becomes die bonding film 3 Base portion.It is almost diamond that projecting piece 3a, which is overlooked, and a part of the front end with acute angle is by by stretching out starting point Ea、EaLine segment The shape of cutting, specifically, having following shape: from comprising vertical from the circular circumference of die bonding film along direction Z is stretched out The root for the part risen, by reaching the front end for being tapered to V-arrangement along the middle part perpendicular to the direction expansion for stretching out direction Z Portion.By the way that the front end of projecting piece 3a is set as V-arrangement, the mechanical strength of projecting piece 3a can be kept and can be reduced to come from The drawing stress of partition 14.Furthermore it is possible to become the easy structure for forming front end with straight line, therefore it can be readily formed and stretch Slice.
The interior angle of the front end of the V-arrangement is not particularly limited, but from dicing/die bonding film 12 from partition 14 From the viewpoint of the easiness of upper removing, the upper limit is preferably 90 ° hereinafter, more preferable 75 ° or less.In addition, under above-mentioned interior angle Preferably 30 ° or more, more preferable 45 ° or more of limit.
With the minimum diameter distance d for stretching out the root of the projecting piece on the vertical direction direction Z of projecting piece 3amin(i.e. The stretching starting point E of present embodimenta、EaBetween distance) be preferably smaller than middle part between the root and front end of projecting piece 3a Maximum gauge distance dmax(that is, distance between the vertex of the front end at the obtuse angle of present embodiment).By being formed as making projecting piece The shape of the root of 3a constriction compared with middle part, though when removing the front end (and middle part) of projecting piece 3a remain in every 14 side of piece, the stress that removing when root carries out is crossed in removing also can be concentrated in root, so as to promote the cutting of root.Knot The new stripping starting point of die bonding film 3 can be arranged near the place of incision of projecting piece 3a, can press down as much as possible for fruit Make the generation of the undesirable condition of removing.
From the viewpoint of the cutting of root when promoting removing, the minimum diameter distance d of rootminPreferably 1mm with Under.From the viewpoint of the mechanical strength of root, minimum diameter distance dminLower limit be preferably 0.5mm or more.
The minimum diameter distance d of rootminMaximum gauge distance d relative to middle partmaxThe ratio between (dmin/dmax), from true From the viewpoint of the balance of cutting when protecting the mechanical strength of projecting piece and promoting the removing of root, preferably 0.7 hereinafter, more preferably 0.5 or less.
For the overhang h that projecting piece 3a is stretched out from base portion, as long as projecting piece 3a can be used as dicing/die bonding film 12 stripping starting point works, and is not particularly limited, preferably 1~10mm, more preferable 3~5mm.In addition, overhang h is as logical Cross stretching starting point Ea、EaStraight line with by the front end point of projecting piece 3a perpendicular to the distance between the straight line for stretching out direction Z It finds out.By stretching out starting point Ea、EaStraight line be not orthogonal to stretch out direction Z when, as with straight line will stretch out starting point Ea、EaConnection The point of bisection of line segment and finding out perpendicular to the distance between the straight line for stretching out direction Z by the forward terminal of projecting piece 3a.
The overhang h that the middle part of projecting piece 3a is stretched out from base portionmidIt is not particularly limited, preferably 0.5~10mm, it is more excellent Select 0.5~5mm.In addition, the overhang h of middle partmidAs by stretching out starting point Ea、EaStraight line with by provide projecting piece 3a Middle part maximum gauge distance dmaxThe distance between the straight line of two o'clock find out.By stretching out starting point Ea、EaStraight line or Person is by providing the maximum gauge distance d of the middle part of projecting piece 3amaxTwo o'clock straight line be not orthogonal to stretch out direction Z when, make For starting point E will be stretched out with straight linea、EaThe point of bisection of the line segment of connection connect the middle part of offer projecting piece 3a with straight line Maximum gauge distance dmaxThe distance between the point of bisection of line segment of two o'clock find out.
As shown in Figure 1B, projecting piece 3a is preferably configured along the length direction X of long size partition 14.It is connect by dicing/die When conjunction film 12 is continuously removed from the film 10 with partition of the long size of releasing, if projecting piece 3a is along long size partition 14 length direction X configuration, then peeling direction is parallel with the length direction X of long size partition 14, therefore, can efficiently carry out Continuous removing.
In addition, when projecting piece is along the length direction X configuration of long size partition 14, preferably in the length along long size partition 14 The die bonding film 3 of direction X both ends (left end for being provided with projecting piece 3a of the die bonding film 3 illustrated in Figure 1B, The right end of the not set projecting piece of opposite to that side) it is provided with projecting piece.As a result, particularly, be formed as coiling body The release direction of the dicing/die bonding film 10 with partition of long size is unrelated, can carry out dicing/die bonding film 12 Continuous removing.
(constituent material etc. of die bonding film)
The layer structure of die bonding film 3 can enumerate knot only comprising single layer gluing oxidant layer as shown in the embodiment Structure is formed with the multilayered structure of gluing oxidant layer in the one or two sides of core material.As above-mentioned core material, can enumerate film (such as Kapton, polyester film, pet film, polyethylene naphthalate film, poly- carbonic acid Ester film etc.), strengthened with glass fibre or plastics non-woven fibre after resin substrates, silicon substrate or glass substrate etc..
As the adhesive compound for constituting die bonding film 3, can enumerate thermoplastic resin and thermosetting resin Composition obtained from being applied in combination.
As above-mentioned thermosetting resin, can enumerate phenolic resin, amino resins, unsaturated polyester resin, epoxy resin, Polyurethane resin, polyorganosiloxane resin or thermoset polyimide resin etc..These resins can be used alone or two kinds with On be applied in combination.The poor epoxy resin of the ionic impurity of particularly preferred corrosion resistant semiconductor element etc..In addition, as ring The curing agent of oxygen resin, preferably phenolic resin.
As above-mentioned epoxy resin, as long as not limited especially then usually as the epoxy resin that adhesive compound uses System, can be used for example: bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl Type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, three (hydroxyphenyl) methane types, four (hydroxyphenyl) ethane The bifunctional epoxy resins such as type or polyfunctional epoxy resin or hydantoins type, triglycidyl isocyanurate type or The epoxy resin such as glycidic amine type.These epoxy resin may be used singly or two or more in combination.These epoxies In resin, particularly preferred phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, three (hydroxyphenyl) methane type epoxy resin or four (hydroxyphenyl) ethane type epoxy resin.This is because: the reactivity of these epoxy resin and the phenolic resin as curing agent is good, Heat resistance etc. is excellent.
Above-mentioned phenolic resin works as the curing agent of above-mentioned epoxy resin, can enumerate for example: phenol novolacs Resin, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, phenol biphenyl resin, nonyl The novolak phenolics such as phenol resol resins, resol-type phenolic resin, poly(4-hydroxystyrene) etc. Polycarboxylated styrene etc..These phenolic resin may be used singly or two or more in combination.It is special in these phenolic resin Not preferred phenol resol resins, phenol aralkyl resin etc..This is because the connection that semiconductor device can be improved is reliable Property.
For the mixing ratio of above-mentioned epoxy resin and phenolic resin, preferably for example relative in above-mentioned epoxy resin ingredient 1 equivalent of epoxy group by the hydroxyl in phenolic resin be 0.5~2.0 equivalent in a manner of cooperated.More preferable 0.8~1.2 works as Amount.That is, this is because: if the mixing ratio of the two beyond above range, not can be carried out sufficient curing reaction, epoxy The characteristic of resin cured matter is easy to be deteriorated.
As above-mentioned thermoplastic resin, natural rubber, butyl rubber, isoprene rubber, neoprene, second can be enumerated Alkene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, poly- carbonic acid The polyamides such as ester resin, thermoplastic polyimide resin, nylon 6 or nylon 6,6, phenoxy resin, acrylic resin, The saturated polyester resins such as PET or PBT, polyamide-imide resin or fluorine resin etc..These thermoplastic resins can be independent Using or be used in combination.In these thermoplastic resins, particularly preferred ionic impurity is few, heat resistance is high, can Ensure the acrylic resin of the reliability of semiconductor element.
It as above-mentioned acrylic resin, is not particularly limited, can enumerate has carbon former with one or more kinds of The acrylate or methacrylate of the linear or branched alkyl group of 30 or less subnumber, particularly carbon atom number 4~18 be used as at The polymer (acrylic copolymer) etc. divided.As abovementioned alkyl, can enumerate for example: methyl, ethyl, propyl, isopropyl, Normal-butyl, tert-butyl, isobutyl group, amyl, isopentyl, hexyl, heptyl, cyclohexyl, 2- ethylhexyl, octyl, iso-octyl, nonyl Base, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or two Ten alkyl etc..
In addition, being not particularly limited, can enumerating for example as the other monomers for forming above-mentioned polymer: acrylic acid contracting Water glyceride, glycidyl methacrylate etc. contain glycidyl monomer, acrylic acid, methacrylic acid, acrylic acid carboxyl Carboxyl group-containing monomers, maleic anhydride or the itaconic acids such as ethyl ester, acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid or crotonic acid The anhydride monomers such as acid anhydride, (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid -4- Hydroxybutyl, the own ester of (methyl) acrylic acid -6- hydroxyl, (methyl) acrylic acid -8- hydroxyl monooctyl ester, (methyl) acrylic acid -10- hydroxyl The hydroxyls monomers, benzene second such as last of the ten Heavenly stems ester, (methyl) acrylic acid -12- hydroxylauric ester or acrylic acid (4- hydroxymethylcyclohexyl) methyl esters Alkene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acryamidopropanesulfonic acid, (methyl) The monomer containing sulfonic group such as acrylic acid sulphur propyl ester or (methyl) propane sulfonic acid, acryloyl phosphoric acid -2- hydroxy methacrylate etc. contain Phosphate monomer, styrene monomer or acrylonitrile etc..
In addition, can suitably cooperate filler according to its purposes in die bonding film 3.The cooperation of filler can be assigned and be led Electrically or improve thermal conductivity, adjust elasticity modulus etc..As above-mentioned filler, inorganic filler and organic filler can be enumerated, from mentioning From the viewpoint of the characteristics such as high operability, raising electrical conductivity, adjusting melt viscosity, imparting thixotropy, preferably inorganic filler.Make It for above-mentioned inorganic filler, is not particularly limited, can enumerate for example: aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, silicic acid Calcium, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, amorphous dioxy SiClx etc..These fillers may be used singly or two or more in combination.From the viewpoint of improving electrical conductivity, preferably Aluminium oxide, aluminium nitride, boron nitride, crystalline silica, amorphous silica.In addition, the balance from above-mentioned each characteristic is good Viewpoint consideration, preferably crystalline silica or amorphous silica.In addition, in order to assign electric conductivity, raising electrical conductivity etc., Conductive material (conductive filler) can be used as inorganic filler.As conductive filler, can enumerate make silver, aluminium, gold, copper, Nickel, electric conductivity alloy etc. be formed as the metal oxides such as spherical, needle-shaped, laminar metal powder, aluminium oxide, amorphous carbon black, Graphite etc..The average grain diameter of above-mentioned filler is 0.1~80 μm.In addition, the average grain diameter of filler for example passes through luminosity formula granularity point The value that cloth meter (HORIBA system, device name: LA-910) is found out.
The use level of above-mentioned filler adds up to 100 relative to thermosetting resin component, thermoplastic resin elements and filler Parts by weight are preferably 5 parts by weight or more, it is more than more preferable 10 parts by weight and 95 parts by weight hereinafter, further preferred 20 parts by weight with Below upper and 90 parts by weight.
In addition, other than above-mentioned filler, can also suitably cooperate other additions as needed in die bonding film 3 Agent.As other additives, can enumerate for example: fire retardant, silane coupling agent or ion trap agent etc..As above-mentioned fire-retardant Agent can be enumerated for example: antimony oxide, antimony pentoxide, brominated epoxy resin etc..These fire retardants can be used alone or Person is used in combination.It as above-mentioned silane coupling agent, can enumerate for example: β-(3,4- epoxycyclohexyl) ethyl front three Oxysilane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silane etc..This A little compounds may be used singly or two or more in combination.As above-mentioned ion trap agent, can enumerate for example: neatly Stone class, bismuth hydroxide etc..These ion trap agents may be used singly or two or more in combination.
The thickness (in the case where laminated body be overall thickness) of die bonding film 3 is not particularly limited, for example, can from 1~ 200 μm of range selection, preferably 5~100 μm, more preferable 10~80 μm.
(substrate)
Intensity parent of the above-mentioned substrate 1 preferably with the substrate of UV transmissive, as cutting film 11.It can arrange Citing is such as: low density polyethylene (LDPE), linear polyethylene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, random The polyolefin such as copolymer polypropylene, block copolymerization polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethane-acetic acid ethyenyl ester Copolymer, ionomer resin, ethylene-(methyl) acrylic copolymer, ethylene-(methyl) acrylate (random, alternating) copolymerization Object, ethylene-butene copolymer, ethylene-hexene co-polymers, polyurethane, polyethylene terephthalate, poly- naphthalenedicarboxylic acid second two The polyester such as alcohol ester, polycarbonate, polyimides, polyether-ether-ketone, polyimides, polyetherimide, polyamide, full aromatics polyamides Amine, polyphenylene sulfide, aromatic polyamides (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose Resinoid, polyorganosiloxane resin, metal (foil), paper etc..
In addition, the material as substrate 1, can enumerate the polymer such as the cross-linking agent of aforementioned resin.Above-mentioned plastic film can It is used with not stretching, also can according to need and used after carrying out uniaxial or biaxial stretching processing.Using by stretch processing etc. And the resin sheet of heat-shrinkable is imparted, after dicing it is heat-shrinked the substrate 1, it is possible thereby to reduce adhesive phase 2 and chip The gluing area of bonding film 3, so as to easily recycle semiconductor chip (semiconductor element).
In addition, usual surface can be implemented in the surface of substrate 1 in order to improve with the adhesiveness of adjoining course, retentivity etc. Processing, for example, chromic acid processing, ozone exposure, fire exposure, high-voltage electric shock exposure, ionization radial line processing etc. are chemically or physically Processing utilizes the coating process of silane coupling agent (such as aftermentioned adhesion substance).Above-mentioned substrate 1 can be properly selected using of the same race Or different types of material, it also can according to need using the material after several materials are blended.
The thickness of substrate 1 is not particularly limited, and can be appropriately determined, and typically about 5 μm~about 200 μm.
(adhesive phase)
Adhesive used in formation as adhesive phase 2, is not particularly limited, and it is, for example, possible to use acrylic compounds The general pressure-sensitive adhesive such as adhesive, rubber adhesive.As above-mentioned pressure-sensitive adhesive, from semiconductor wafer or glass etc. Evade pollution electronic component using cleaning washing performance of the organic solvents such as ultrapure water or alcohol etc. from the viewpoint of, preferably with third Olefin(e) acid quasi polymer is the acrylic adhesives of basic polymer.
As above-mentioned acrylic polymer, can enumerate for example: use (methyl) alkyl acrylate (for example, methyl esters, Ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- ethyl Own ester, different monooctyl ester, nonyl ester, last of the ten Heavenly stems ester, isodecyl ester, hendecane ester, dodecane ester, tridecane ester, tetradecane ester, hexadecane ester, ten The carbon atom number 1~30 of the alkyl such as eight alkyl esters, eicosane ester, particularly the linear or branched alkyl group ester of carbon atom number 4~18 etc.) And the one or more of (methyl) acrylate base ester (for example, ring pentyl ester, cyclohexyl etc.) as monomer component third Olefin(e) acid quasi polymer etc..In addition, (methyl) acrylate refers to acrylate and/or methacrylate, (first of the invention Base) all indicate identical meaning.
In order to improve cohesiveness, heat resistance etc., above-mentioned acrylic polymer can according to need containing with can be same as above State the corresponding unit of other monomer components of (methyl) alkyl acrylate or the copolymerization of (methyl) acrylate base ester.As this The monomer component of sample can be enumerated for example: acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid The carboxyl group-containing monomers such as carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid, crotonic acid；The anhydride monomers such as maleic anhydride, itaconic anhydride； (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid -4- hydroxybutyl, (first Base) the own ester of acrylic acid -6- hydroxyl, (methyl) acrylic acid -8- hydroxyl monooctyl ester, (methyl) acrylic acid -10- hydroxyl last of the ten Heavenly stems ester, (methyl) The hydroxyls monomers such as acrylic acid -12- hydroxylauric ester, (methyl) acrylic acid (4- hydroxymethylcyclohexyl) methyl esters；Styrene sulfonic acid, Allyl sulfonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acryamidopropanesulfonic acid, (methyl) acrylic acid The monomers containing sulfonic group such as sulphur propyl ester, (methyl) propane sulfonic acid；The phosphorous acidic group lists such as acryloyl phosphoric acid -2- hydroxy methacrylate Body；Acrylamide, acrylonitrile etc..One or more can be used in these copolymerisable monomer ingredients.These copolymerisable monomers Usage amount be preferably whole monomer components 40 weight % or less.
In addition, above-mentioned acrylic polymer also can according to need to be made containing polyfunctional monomer etc. in order to be crosslinked For comonomer ingredient.As such polyfunctional monomer, can enumerate for example: hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, (poly-) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylic acid Ester, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, amino first Acid esters (methyl) acrylate etc..One or more also can be used in these polyfunctional monomers.From viewpoints such as adhesion characteristics Consider, the usage amount of polyfunctional monomer is preferably the 30 weight % or less of whole monomer components.
Above-mentioned acrylic polymer can be obtained by the way that the mixture of single monomer or two or more monomers to polymerize. Polymerization any one mode can be carried out by polymerisation in solution, emulsion polymerization, bulk polymerization, suspension polymerisation etc..From preventing to clean The viewpoints such as the pollution of net adherend consider that the content of preferably low molecular weight substance is few.Consider from the viewpoint, acrylic The number-average molecular weight of object is preferably from about 300,000 or more, more preferably from about 400,000~about 3,000,000.
In addition, in order to improve the number-average molecular weight of acrylic polymer as basic polymer etc., above-mentioned adhesive In external crosslinker also may be appropriately used.It as the specific means of external cross-linking method, can enumerate: addition polyisocyanates The so-called crosslinking agents such as compound, epoxide, aziridine cpd, melamine class crosslinking agent and the side for reacting it Method.Using external crosslinker, usage amount is according to the balance and conduct with the base polymer that should be crosslinked The usage of adhesive is suitably determined.In general, preferably cooperating 5 weight relative to above-mentioned 100 parts by weight of base polymer Part is hereinafter, more preferably cooperate 0.1~5 parts by weight.In addition, as needed, it, can be in addition to aforesaid ingredients in adhesive Use the additives such as known various tackifier, age resister.
Adhesive phase 2 can be formed by Radiation curing adhesive.Radiation curing adhesive is ultraviolet by irradiating Line israds and increase the degree of cross linking, can easily reduce its bonding force.Keep radiation curable viscous by irradiation with radiation Mixture layer 2 solidifies, thus solidifies and the adhesive phase 2 of bonding force decline and the interface of die bonding film 3 have when picking up The property being easily peeled off.
Above-mentioned Radiation curing adhesive can solidify using with carbon-to-carbon double bond israds without particular limitation Property functional group and the Radiation curing adhesive for showing adhesiveness.As Radiation curing adhesive, may be exemplified Such as: radiation curing is combined in the general pressure-sensitive adhesive such as foregoing acrylic adhesive, rubber adhesive Monomer component or oligomer ingredient addition type Radiation curing adhesive.
As the radiation curing monomer component of cooperation, can enumerate for example: oligourethane, carbamic acid Ester (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, season Penta tetrol three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) propylene Acid esters, dipentaerythritol six (methyl) acrylate, 1,4- butanediol two (methyl) acrylate etc..In addition, radiation curing It is various low that property oligomer ingredient can enumerate carbamates, polyethers, polyesters, polycarbonate-based, polybutadiene etc. Polymers, molecular weight are appropriate in the range of about 100~about 30000.Radiation curing monomer component or oligomer at The use level divided can suitably be determined to reduce the amount of the bonding force of adhesive phase according to the type of above-mentioned adhesive phase.One As for, relative to 100 parts by weight of base polymers, for example, about 5 parts by weight such as acrylic polymer for constituting adhesive ~about 500 parts by weight, preferably from about 40 parts by weight~about 150 parts by weight.
In addition, as Radiation curing adhesive, in addition to addition type Radiation curing adhesive described above with Outside, it can also enumerate and use in polymer lateral chain or main chain or main chain terminal has the polymer of carbon-to-carbon double bond as base The inherent type Radiation curing adhesive of plinth polymer.Inherent type Radiation curing adhesive is without containing or not a large amount of Containing the oligomer ingredient etc. as low molecular composition, therefore, oligomer ingredient etc. will not move in adhesive over time It moves, the adhesive phase of stable layer structure can be formed, therefore preferably.
The above-mentioned base polymer with carbon-to-carbon double bond can without particular limitation using with carbon-to-carbon double bond and Polymer with adhesiveness.It is preferably poly- using acrylic polymer as basic framework as such base polymer Close object.As the basic framework of acrylic polymer, the acrylic polymer that foregoing illustrative is crossed can be enumerated.
The method that carbon-to-carbon double bond is introduced in above-mentioned acrylic polymer is not particularly limited, and can use various sides Carbon-to-carbon double bond introducing polymer lateral chain is still easier by method in MOLECULE DESIGN.For example following method can be enumerated: pre- After first the monomer with functional group is copolymerized in acrylic polymer, make have can be with the functional group of the functional group reactions Condensation or addition reaction are carried out in the case where keeping the radiation curing of carbon-to-carbon double bond with the compound of carbon-to-carbon double bond.
It as the combination example of these functional groups, can enumerate for example: carboxyl and epoxy group, carboxyl and '-aziridino, hydroxyl With isocyanate group etc..In the combination of these functional groups, consider from the easiness of reactive tracing, preferably hydroxyl and isocyanate group Combination.In addition, generating the above-mentioned acrylic polymer with carbon-to-carbon double bond if it is the combination by these functional groups Combination, then functional group can be on any side of acrylic polymer and above compound, in above-mentioned preferred combination In, preferably acrylic polymer has the case where isocyanate group with hydroxyl, above compound.At this point, as with carbon- The isocyanate compound of carbon double bond can be enumerated for example: methacryl isocyanates, 2- methylacryoyloxyethyl isocyanide Acid esters, isopropenyl-alpha, alpha-dimethyl dibenzoyl isocyanates etc..In addition, as acrylic polymer, can be used by Hydroxyl monomer or 2- hydroxyethyl vinyl ether, 4- hydroxybutyl vinyl ether, the diethylene glycol monovinyl base of foregoing illustrative Polymer obtained from the copolymerization such as ether compound of ether.
Above-mentioned inherence type Radiation curing adhesive can be used alone the above-mentioned base polymer with carbon-to-carbon double bond (especially acrylic polymer) can also cooperate above-mentioned radiation curing monomer component with the degree for not making characteristic be deteriorated Or oligomer ingredient.Radiation curing oligomer ingredient etc. is relative to 100 parts by weight of base polymer usually in 30 parts by weight In the range of, the preferably range of 0~10 parts by weight.
In above-mentioned Radiation curing adhesive, contain Photoepolymerizationinitiater initiater in using the cured situation such as ultraviolet light. As Photoepolymerizationinitiater initiater, can enumerate for example: 4-(2- hydroxyl-oxethyl) phenyl (2- hydroxyl -2- propyl) ketone, Alpha-hydroxy - The α -one alcohol compounds such as α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparation, 1- hydroxycyclohexyl phenyl ketone；First Oxygroup acetophenone, 2,2- dimethoxy-2- phenyl acetophenone, 2,2- diethoxy acetophenone, 2- methyl-1-[4- (methyl mercapto) Phenyl] acetophenone compounds such as -2- morpholino propane -1- ketone；Benzoin ethyl ether, benzoin iso-propylether, anisoin methyl ether Etc. benzoin ethers compound；The ketal compounds such as dibenzoyl dimethyl ketal；The aromatic sulfonyls class such as 2- naphthalene sulfonyl chloride Compound；The photolytic activities oxime compounds such as 1- phenyl -1,2- pentanedione -2- (O- ethoxy carbonyl) oxime；Benzophenone, benzene first The benzophenone compounds such as acyl benzoic acid, 3,3 '-dimethyl -4- methoxy benzophenones；Thioxanthones, 2-chlorothioxanthone, 2- Methyl thioxanthones, 2,4- dimethyl thioxanthone, isopropyl thioxanthone, bis- clopenthixal ketone of 2,4-, 2,4- diethyl thioxanthone, 2,4- The thioxanthene ketone class compound such as diisopropylthioxanthone；Camphorquinone；Halogenated ketone；Acylphosphine oxide；Acyl phosphonate etc..Photopolymerization is drawn The use level of agent is sent out relative to 100 parts by weight of base polymers such as the acrylic polymer for constituting adhesive for example, about 0.05 Parts by weight~about 20 parts by weight.
In addition, can be enumerated for example as Radiation curing adhesive: in Japanese Unexamined Patent Application 60-196956 bulletin It is disclosed, contain the light such as the addition polymerization compound with 2 or more unsaturated bonds, the alkoxy silane with epoxy group Polymerizable compound and carbonyls, organosulfur compound, peroxide, amine,The Photoepolymerizationinitiater initiaters such as salt compounds Rubber adhesive or acrylic adhesives etc..
In addition, in the case where generating because of oxygen solidification obstacle in irradiation with radiation, preferably by any means to radiation The surface of line curing adhesive layer 2 obstructs oxygen (air).It can enumerate for example: with partition by the surface of above-mentioned adhesive phase 2 The method of covering or in nitrogen atmosphere carry out ultraviolet light israds irradiation method etc..
The thickness of adhesive phase 2 is not particularly limited, from realizing the defect and adhesive layer for preventing chip cutting face simultaneously The viewpoints consideration such as fixed holding, preferably from about 1 μm~about 50 μm.It is preferred that 2 μm~30 μm, more preferable 5 μm~25 μm.
[manufacturing method of the dicing/die bonding film with partition]
The dicing/die bonding film 10 with partition of present embodiment can for example make by the following method.
Firstly, substrate 1 can be formed a film by conventionally known film build method.As the film build method, may be exemplified for example: Roll membrane formation process, the tape casting in organic solvent, the blow molding extrusion molding in enclosed system, T shape extrusion, coetrusion, Dry lamination method etc..In the case where colouring to substrate 1, above-mentioned colorant is added.
Then, coating adhesive composition solution forms film on substrate 1, then under prescribed conditions does the film Dry (carrying out heat cross-linking as needed) and form adhesive phase 2.It as coating method, is not particularly limited, example can be enumerated Such as: roller coating, silk screen coating, intaglio plate coating.It, can be in such as 80~150 DEG C of drying temperature, dry in addition, as drying condition It is carried out in the range of dry 0.5~5 minute time.Alternatively, it is also possible on partition coating adhesive composition formed film after Dried coating film is formed to adhesive phase 2 under above-mentioned drying condition.Then, adhesive phase 2 is fitted into substrate 1 together with partition On.Production cutting film 11 as a result,.
Die bonding film 3 is for example made with following methods.
Firstly, adhesive compound solution of the production as the forming material of die bonding film 3.The adhesive compound In solution, as previously mentioned, being combined with above-mentioned adhesive compound, filler, various other additives etc..
Then, specific thickness will be become in adhesive compound solution coating to substrate then should to form film Film is dried under prescribed conditions, forms die bonding film precursor.It as coating method, is not particularly limited, can enumerate Such as: roller coating, silk screen coating, intaglio plate coating etc..In addition, as drying condition, can such as 70~160 DEG C of drying temperature, It is carried out in the range of 1~5 minute drying time.Alternatively, it is also possible to the coating binder composition solution formation film on partition Afterwards, dried coating film is formed to die bonding film precursor under aforementioned drying condition.Then, by die bonding film precursor with Partition is fitted to together on substrate partition.
Then, obtained die bonding film precursor is die cut or is cut in a manner of becoming defined plan view shape It cuts, makes the die bonding film 3 with projecting piece.
Then, partition is removed respectively from cutting film 11 and die bonding film 3, with die bonding film 3 and bonding Oxidant layer 2 is that the two is bonded by the mode of binding face.Fitting can for example be carried out by crimping.At this point, laminating temperature is without spy It does not limit, such as preferably 30~50 DEG C, more preferable 35~45 DEG C.In addition, line pressure it is not also specifically limited, such as preferably 0.1~ 20kgf/cm, more preferable 1~10kgf/cm.
Finally, the substrate partition on die bonding film 3 is removed, be bonded with partition, obtain the band of present embodiment every The dicing/die bonding film 10 of piece.In present embodiment, use long size partition 14 as partition, by multiple dicing/dies Bonding film 12 is fitted at a prescribed interval on partition 14.The film 10 with partition of such long size can be wound as It is scroll-like and in the form of coiling body use.
[manufacturing method of semiconductor device]
Hereinafter, being carried out in case where using the dicing/die bonding film 10 with partition with reference to Figure 1B, Fig. 3 and Fig. 4 Explanation.Fig. 3 is the manufacturing process for indicating the semiconductor device of the dicing/die bonding film with partition using present embodiment A process schematic sectional view, Fig. 4 is the core indicated by the dicing/die bonding film shown in figure 1A with partition Chip bonding film installs the schematic sectional view of the example of semiconductor chip.
As shown in Figure 1B, the film 10 with partition is continuously released along release direction Y.Then, well known chip is utilized Mounting device is removed dicing/die bonding film 12, from long size partition 14 as shown in figure 3, semiconductor wafer 4 is pressed (brilliant process is pasted) on dicing/die bonding film 12 after being connected to removing.Removing has projecting piece from the formation of die bonding film 3 The side of 3a carries out.Projecting piece 3a becomes stripping starting point as a result, dicing/die bonding film 12 can be easily peeled off.Separately Outside, stripping starting point can be made to be always located in release direction Y at projecting piece 3a by the length direction X-shaped along long size partition 14 Front end side, therefore, the stripping for the dicing/die bonding film 12 that can be begun releasing in the constant position on long size partition 14 From, and the complex job for removing can be inhibited.
It pastes brilliant process and is being pressed while progress using the pressings means such as crimping roller.Patch crystalline substance temperature when installation does not have Especially limitation, such as preferably in the range of 20~80 DEG C.
Then, the cutting of semiconductor wafer 4 is carried out.As a result, by semiconductor wafer 4 be cut into as defined in size and small pieces Change, manufacture semiconductor chip 5(refers to Fig. 4).Cutting is for example carried out from the circuit face side of semiconductor wafer 4 according to conventional methods. In addition, in this process, such as can use and be cut into die bonding film 3, the cutting mode referred to as cut entirely etc..As this work Cutter device used in sequence, is not particularly limited, and conventionally known cutter device can be used.In addition, semiconductor wafer 4 by 12 gluing of dicing/die bonding film is fixed, therefore chip defect or chip can be inhibited to disperse and or inhibit partly to lead The breakage of body chip 4.
In order to be removed by the fixed semiconductor chip 5 of 12 gluing of dicing/die bonding film, semiconductor chip 5 is carried out Pickup.It as pick-up method, is not particularly limited, conventionally known various methods can be used.It such as can enumerate: use needle Each semiconductor chip 5 is above pushed away from cutting 11 side of film and is picked up the semiconductor chip 5 being pushed using pick device Method etc..
Here, being picked up after irradiating ultraviolet light to the adhesive phase 2 in the case that adhesive phase 2 is ultraviolet hardening It carries out.Adhesive phase 2 declines the bonding force of die bonding film 3 as a result, and the removing of semiconductor chip 5 becomes easy.Knot Fruit can be picked up in the case where not damaging semiconductor chip 5.Exposure intensity, irradiation time etc. when ultraviolet light irradiates Condition is not particularly limited, and suitably sets as needed.In addition, can make as light source used in ultraviolet light irradiation With high-pressure sodium lamp, microwave-excitation type lamp, chemical lamp etc..
The semiconductor chip 5 of pickup is fixed on adherend 6 (chip engagement) by 3 gluing of die bonding film.As Adherend 6 can enumerate lead frame, TAB film, substrate or the semiconductor chip separately made etc..Adherend 6 for example can be with For the deformation type adherend being easily deformed, or on-deformable non-deformed type adherend (semiconductor wafer etc.).
As above-mentioned substrate, conventionally known substrate can be used.In addition, Cu can be used and draw as above-mentioned lead frame The die-attach areas such as wire frame, 42 alloy lead wire frames include glass epoxide, BT(bismaleimide-triazine), polyimides etc. RF magnetron sputtering.But present embodiment is without being limited thereto, also comprising can install semiconductor element, be electrically connected with semiconductor element The circuitry substrate used after connecing.
In the case where die bonding film 3 is heat curing type, by being heating and curing, 5 gluing of semiconductor chip is fixed on On adherend 6, improve high-temperature capability.Can 80~200 DEG C, preferably 100~175 DEG C, it is more preferable 100~140 DEG C plus It is carried out at hot temperature.Furthermore it is possible to be 0.1~24 hour, preferably 0.1~3 hour between when heated, 0.2~1 hour more preferable Under conditions of carry out.In addition, object obtained from 5 gluing of semiconductor chip is fixed to substrate etc. above as die bonding film 3 Body can be for Reflow Soldering process.
The shearing adhesive tension of die bonding film 3 after heat cure to adherend 6 be preferably 0.2MPa, more preferable 0.2~ 10MPa.It, will not be because of the work in wire bond process if the shearing adhesive tension of die bonding film 3 is at least 0.2MPa or more Ultrasonic activation or heating in sequence and generate and cut at die bonding film 3 with the gluing surface of semiconductor chip 5 or adherend 6 Shear deformation.That is, semiconductor element will not ultrasonic activation when wire bond due to activity, thus, it is possible to prevent the success rate of wire bond Decline.
In addition, in the manufacturing method of the semiconductor device of present embodiment, it can be in the benefit without die bonding film 3 With carrying out wire bond in the case where the heat curing processes of heat treatment, then semiconductor chip 5 is sealed with sealing resin, and close to this Envelope resin solidifies after carrying out.At this point, shearing adhesive tension when die bonding film 3 is temporarily fixed is preferably to adherend 6 0.2MPa or more, more preferably 0.2~10MPa.If shearing adhesive tension when die bonding film 3 is temporarily fixed is at least 0.2MPa or more will not be because of the ultrasound in the process even if then carrying out wire bond process without heating process Wave vibration is heated and is generated at die bonding film 3 with the gluing surface of semiconductor chip 5 or adherend 6 shear-deformable.That is, Semiconductor element will not ultrasonic activation when wire bond due to activity, thus, it is possible to prevent the success rate of wire bond from declining.
Above-mentioned wire bond is will be on the front end of the portion of terminal (inner lead) of adherend 6 and semiconductor chip 5 using bonding wire 7 The process of electrode pad electrical connection (not shown).It as above-mentioned bonding wire 7, can be used for example: gold thread, aluminum steel or copper wire etc..Into Temperature when row wire bond carries out in the range of 80~250 DEG C, preferably 80~220 DEG C.In addition, its heating time carry out several seconds~ A few minutes.Connection be heating to reach in above-mentioned temperature range in the state of by be applied in combination ultrasonic wave vibrational energy and apply The pressure added and the crimping that generates can carry out.This process can be in the case where the heat cure without die bonding film 3 It carries out.
Above-mentioned sealing process is the process for being sealed semiconductor chip 5 using sealing resin 8.This process is to protect and take The semiconductor chip 5 or bonding wire 7 that are loaded on adherend 6 and carry out.This process by with mold by the resin forming of sealing Come carry out.As sealing resin 8, such as use epoxylite.Heating temperature when for resin seal, usually at 175 DEG C It is lower to carry out 60~90 seconds, however, the present invention is not limited thereto, for example, it is also possible to solidify at 165~185 DEG C several minutes.Exist as a result, It is by die bonding film 3 that semiconductor chip 5 and adherend 6 is fixed while solidifying sealing resin.That is, in the present invention, Even if also can use die bonding film 3 without aftermentioned rear curing process in this process and carry out fixation, So as to help to reduce manufacturing process's number and shorten the manufacturing time of semiconductor device.
After above-mentioned in curing process, make to solidify insufficient sealing resin 8 in aforementioned seal process and be fully cured.Even if In sealing process in the case where the incomplete heat cure of die bonding film 3, in this process die bonding film 3 can also with it is close Seal the complete heat cure together of resin 8.Heating temperature in this process is different because of the type of sealing resin, for example, 165~185 In the range of DEG C, heating time is about 0.5 hour~about 8 hours.
<second embodiment>
The die bonding film of first embodiment has the projecting piece stretched out from outer outer circumferential.Second embodiment Die bonding film has a region for being formed as the extension of taper as the base portion of die bonding film, in its front end It is connected with the projecting piece illustrated in first embodiment.Hereinafter, being illustrated to which.
As shown in Figure 5A, in the film with partition of present embodiment, on die bonding film 23, chip when looking down A part of the periphery of bonding film 23 is formed with to clip two stretching starting point E of the above-mentioned projecting piece 3a on the peripherya、Ea The periphery on two points as stretch out starting point EA、EAAnd with two stretching starting point E of projecting piece 3aa、EaBefore stretching The taper extension 3A of endpoint.Respectively by two stretching starting point E of projecting piece 3aa、EaWith two stretching starting points of extension 3A EA、EAThe two lines section L of connectionA、LAPositioned at two stretching starting point E for passing through projecting piece 3aa、EaAny one and extension Two stretching starting point E of 3AA、EAThe circular arc C of these three pointsA、CAInside.Therefore, die bonding film 23 has relatively large Taper extension 3A and the relatively small projecting piece 3a that links with the front end portion of extension 3A.As a result, from partition When upper removing dicing/die bonding film, even if the removing without projecting piece 3a, the root of projecting piece 3a is crossed in removing (or stretch out starting point Ea、Ea) when, it can also be in the extension for reducing the drawing stress from partition and being formed as taper 3A causes to remove, and can inhibit the generation of the undesirable condition of unexpected removing as much as possible.
Make two stretching starting point E for connecting extension 3AA、EAWith stretching forward terminal (that is, the stretching starting point E of projecting piecea、 Ea) two lines section LA、LAPositioned at above-mentioned circular arc CA、CAInside (the center of gravity side of die bonding film) when, can be straight line, song Any one of line or their combination.Two lines section LA、LAWhen for curve, as long as being located at circular arc CA、CAInside, then may be used To be the curve protruded outward relative to the center of gravity of die bonding film, it is also possible to the center of gravity relative to die bonding film The curve protruded inwardly.Wherein, preferably two lines section LA、LAFor straight line.Thus, it is possible to it is readily formed extension 3A, and The drawing stress from partition can be effectively reduced.
Two lines section LA、LAWhen for straight line, their angulation β are preferably 120 ° or more and 175 ° hereinafter, more preferably 130 ° or more and 160 ° or less.By the way that the internal angle beta of the front end of extension 3A is set as above range, can be effectively reduced Drawing stress from partition, and can fully ensure in die bonding film 23 for pasting semiconductor wafer 4(reference Effective area Fig. 3).
As shown in Figure 5 B, based on the reason same as first embodiment, projecting piece 3a and extension 3A are preferably along long ruler The length direction X of very little partition 14 is configured.Particularly, as shown in Figure 5 B, preferably in the core of the length direction X along long size partition 14 The both ends of chip bonding film 23 are provided with projecting piece 3a, 3a ' and extension 3A, 3A '.
<other embodiment>
The deformation of the projecting piece of other embodiments of the present invention is for example shown in Fig. 6 A to Fig. 6 M.It is thin by engaging chip Film has projecting piece 33a~33m shown in Fig. 6 A to Fig. 6 M, can be easy to carry out dicing/die bonding film from partition Removing.The structure feature of projecting piece in first embodiment can also be equally applicable for projecting piece 33a~33m.
Embodiment
Hereinafter, illustratively the preferred embodiments of the present invention are described in detail.But the if note of being not particularly limited property It carries, then the material recorded in the embodiment or use level etc. are not intended to the gist of the invention being defined in this.In addition, hereinafter, out Existing " part " refers to parts by weight.
[embodiment 1]
(production of die bonding film)
It is dissolved or dispersed in following (a)~(d) in methyl ethyl ketone, obtains the adhesive compound solution of 25 weight % of concentration. In addition, the number of following (a)~(d) refers to the number of solid component.
(a) 11 parts of epoxy resin (Nippon Kayaku K. K's system, EPPN-501HY)
(b) 14 parts of phenolic resin (bright and chemical conversion Co. Ltd. system, MEH7851M)
(c) 100 parts of acrylic rubber (Na ガ セ ケ system テ ッ Network ス Co. Ltd. system, SG-P3)
(d) 67 parts of preparing spherical SiO 2 (ア De マ テ ッ Network ス Co. Ltd. system, SO-E2)
By the adhesive compound solution coating to by through polysiloxanes demoulding treated 50 μm of thickness poly- to benzene two It is 2 minutes dry at 130 DEG C after in demoulding processing film (partition) that formic acid glycol ester film is constituted.Thickness is made as a result, 25 μm of die bonding film precursor.
The die bonding film precursor of production is punched so that base portion is the circle of diameter 330mm and has Fig. 2 The projecting piece of shown shape, production have the die bonding film of the present embodiment of the plan view shape of Figure 1B on the whole.Projecting piece Shape details it is as shown in table 1.
(production of the dicing/die bonding film with partition)
Then, the die bonding film with projecting piece is transferred to cutting film (manufacture of Dong electrician company, trade name " DU-2187G ") on.Transfer is carried out in the mode for keeping the adhesive phase for cutting film opposite with die bonding film.By the stacking Body punching is that the round diameter for making cutting film is 370mm, thus obtains the dicing/die engagement with partition of the present embodiment Film.
[embodiment 2]
The die bonding film precursor made similarly to Example 1 is punched, so that base portion is diameter 330mm's Projecting piece and extension round and with shape shown in Fig. 5 A, production on the whole there is the chip of the plan view shape of Fig. 5 B to connect It closes film and makes the dicing/die bonding film with partition similarly to Example 1 in addition to this.In addition, the shape of projecting piece Shape is similarly to Example 1.The details of the shape of projecting piece are as shown in table 1.
[embodiment 3]
The shape of projecting piece is set as shape shown in Fig. 6 M, in addition to this, production is with partition similarly to Example 1 Dicing/die bonding film.The details of the shape of projecting piece are as shown in table 1.
[embodiment 4]
The shape of projecting piece is set as shape shown in Fig. 6 C, in addition to this, production is with partition similarly to Example 1 Dicing/die bonding film.The details of the shape of projecting piece are as shown in table 1.
[comparative example 1]
Be not provided with projecting piece on die bonding film, plan view shape be set as to the circle of diameter 330mm, except this with Outside, the dicing/die bonding film with partition is made similarly to Example 1.The details of the shape of projecting piece are as shown in table 1.
<evaluation of the fissility of partition>
Using chip fitting machine (Dong Jing machine company manufacture, trade name " MA3000II "), by partition from embodiment and ratio Compared with being removed on the dicing/die bonding film with partition of example.In addition, in Examples 1 to 4, from the side for being provided with projecting piece It is removed.When removing die bonding film from cutting film (when die bonding film remains on partition), it will cut thin Being evaluated as the case where being stripped the predetermined region for pasting 12 inch wafers on part arrival die bonding film for film is bad, and Sample number is set as 50, finds out fraction defective { (umber of defectives/whole samples number) × 100 (%) }.The results are shown in Table 1.
<result>
As shown in Table 1, the projecting piece that protrudes outward is arranged by the peripheral part in die bonding film, it can be with Dicing/die bonding film is easy to carry out from the removing on partition.

Claims (8)

1. a kind of dicing/die bonding film with partition has convex outward by peripheral part by partition, when looking down The die bonding film and cutting film of projecting piece out are obtained with sequence stacking,
Wherein, the minimum diameter distance of the root of the projecting piece is less than on the direction vertical with the stretching direction of the projecting piece The maximum gauge distance of middle part between the root and front end of the projecting piece,
The projecting piece has the front end of taper,
The projecting piece has the front end of V-arrangement, and
The interior angle of the front end of the V-arrangement is 30 ° or more and 90 ° or less.
2. as described in claim 1 with the dicing/die bonding film of partition, wherein the minimum diameter distance of the root For 1mm or less.
3. as described in claim 1 with the dicing/die bonding film of partition, wherein the partition is long size partition.
4. as claimed in claim 3 with the dicing/die bonding film of partition, wherein the projecting piece is along the long size The length direction of partition configures.
5. according to any one of claims 1 to 4 with the dicing/die bonding film of partition, wherein the chip engagement On film, a part of the periphery of the die bonding film when looking down is formed with to clip the stretching on the periphery Two points on the periphery of two stretching starting points of piece are as stretching starting point and with two stretching starting points of projecting piece work For stretch out forward terminal taper extension,
Two two lines sections for stretching out starting point and two stretching starting points of the extension for being separately connected the projecting piece are located at Starting points these three points are stretched out by two of any one and the extension of two of projecting piece stretching starting points The inside of circular arc.
6. as claimed in claim 5 with the dicing/die bonding film of partition, wherein the two lines section is straight line.
7. as claimed in claim 6 with the dicing/die bonding film of partition, wherein the two lines section angulation It is 120 ° or more and 175 ° or less.
8. as described in claim 1 with the dicing/die bonding film of partition, wherein the cutting film have substrate and The adhesive phase of stacking on the substrate,
The die bonding film is laminated on the described adhesive layer of the cutting film.
CN201310499530.0A 2012-10-31 2013-10-22 Dicing/die bonding film with partition Active CN103794530B (en)

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