TW201426837A - Dicing and die-bonding film equipped with separator board - Google Patents

Abstract

The present invention provides a dicing and die-bonding film equipped with separator board, which can easily peel off the dicing and die-bonding film from the separator board. The dicing and die-bonding film equipped with separator board of this invention is formed by laminating a separator board, a die-bonding film having an outer circumferential part provided with a protrusion sheet protruding toward the outer side when viewing from the top, and a dicing film in such a sequence. In addition, the protrusion sheet has a cone-shaped or a V-shaped front part. The separator board is a bar-shaped separator board. The protrusion sheet is arranged along the length direction of the bar-shaped separator board.

Description

Cutting board with separator board ‧ wafer bonding film

The present invention relates to a ‧ wafer bonded film with a separator.

Conventionally, in the manufacturing process of a semiconductor device, a dicing wafer-bonding film in which a thermosetting film-bonding film is laminated on a dicing film is used (for example, refer to Patent Document 1). In the manufacturing process of the semiconductor device using the dicing die-bonding film, first, the semiconductor wafer is bonded to the dicing ‧ wafer bonding film to be fixed, and dicing is performed in this state. Thereby, the semiconductor wafer is singulated into a specific size to become a semiconductor wafer. Next, in order to peel the semiconductor wafer fixed on the dicing ‧ wafer bonding film from the dicing film, the semiconductor wafer is picked up. Subsequently, the semiconductor wafer picked up together with the wafer bonding film is fixed to the adherend such as a substrate through a wafer bonding film.

In the above-described dicing ‧ wafer bonding film, a dicing film and a wafer bonding film which are each punched into a circular shape or the like according to the size of the semiconductor wafer are laminated. The dicing ‧ wafer bonding film is disposed on the strip side with the wafer bonding film as the bonding side at a specific interval on. When bonding to a semiconductor wafer, the dicing ‧ wafer bonding film is peeled off from the separator using a wafer mounting device or the like, and then attached to the semiconductor wafer.

[Previous Technical Literature] [Patent Document]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-218571

The separator is generally subjected to a mold release treatment by a release agent or the like in order to improve the peelability of the dicing die-bonding film. However, when the dicing die-bonding film is peeled off from the separator sheet, peeling between the separator sheet and the wafer bonding film may not proceed smoothly, and the wafer bonding film may remain on the separator sheet only in the state of cutting the film. Stripped.

SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing problems, and an object thereof is to provide a ‧ wafer bonded film with a separator which is easily cut from a separator sheet by a ‧ wafer bonded film

The inventors of the present application have conducted research to solve the above problems, and have found that the above problems can be solved by adopting the following configuration, and the present invention has been completed.

That is, the present invention is a cutting board with a separator board The film is formed by laminating the separator, the wafer bonding film having the protruding sheet protruding outward in the outer peripheral portion in plan view, and the dicing film in this order.

In the dicing of the separator ‧ the wafer bonding film (hereinafter also referred to as "the film with the separator"), the wafer bonding film has a protruding sheet which protrudes outward at the outer peripheral portion in a plan view (hereinafter sometimes referred to as a short film) The "stretching sheet" is thus the starting point of peeling when peeled off from the side on which the protruding sheet is formed, and as a result, the cutting can be easily performed, and the wafer bonding film is peeled off from the separator. On the other hand, in the case where the wafer bonding film does not have the protruding sheet, the region which is the starting point of the peeling of the wafer bonding film is in a state of being closer to a straight line, and the stress that the wafer bonding film receives from the separator at the initial stage of peeling (to be The stress which the wafer bonding film pulls toward the partition plate side, hereinafter also referred to as "drawing stress") becomes large, and there is a case where conventional peeling failure occurs.

In the film with a separator, it is preferred that the projecting piece has a tapered front end. Thereby, the contact area between the tip end portion of the protruding piece and the partition plate is made small, the pulling stress from the partition plate can be reduced, and the dicing ‧ wafer bonding film can be more easily peeled off.

In the film with a separator, the protruding piece preferably has a V-shaped front end portion. By setting the front end portion of the projecting piece to a V shape, it is possible to maintain the mechanical strength of the projecting piece on the one hand, and to reduce the pulling stress from the partition plate on the one hand, and to form a simple structure in which the front end portion is formed in a straight line. Therefore, the formation of the protruding piece becomes easy.

In the film with the partition plate, the aforementioned V-shaped front end portion The inner angle is preferably 30 or more and 90 or less. Thereby, the tensile stress from the separator can be further reduced, and the dicing of the dicing die-bonding film from the separator can be performed more satisfactorily.

In the film with the partitioning plate, the minimum span distance of the root portion of the protruding piece is preferably smaller than the intermediate portion between the root portion and the front end portion of the protruding piece in a direction perpendicular to the extending direction of the protruding piece The maximum span distance. By thus making the root portion of the projecting piece have a narrowed shape, even if the front end portion (and the intermediate portion) of the projecting piece remains on the partitioning plate side at the time of peeling, the peeling stress is peeled off when the root portion is peeled off (from the protruding piece) The front end portion, the intermediate portion receives the tensile stress from the partition plate and the region beyond the root portion (that is, the region other than the protruding piece of the wafer bonding film, and hereinafter, the region is also referred to as the "base portion" of the wafer bonding film. The sum of the stresses that are lifted) will also concentrate on the roots to cut the roots. As a result, a new peeling starting point of the base portion can be provided in the vicinity of the cut portion of the projecting piece, and the occurrence of peeling failure can be suppressed as much as possible.

In the film with a separator, the minimum span distance of the root portion is preferably 1 mm or less. According to this, it is possible to promote the cutting of the root portion when the peeling is performed over the root portion, and it is possible to easily promote the new peeling from the base portion.

In the film with the partition plate, the partition plate may be an elongated partition plate. By arranging a plurality of dicing ‧ wafer bonding films at a predetermined interval on the elongated separator plate, continuous operation can be performed, and thus the manufacturing efficiency of the semiconductor device can be improved.

In the film with the partition plate, the protruding piece is preferably disposed along the longitudinal direction of the elongated partition plate. Long strip of self-winding When the dicing of the separator ‧ the wafer bonding film is continuously peeled off and the dicing film is bonded, if the protruding sheet is disposed along the longitudinal direction of the elongated partitioning plate, the peeling direction is parallel to the longitudinal direction of the elongated partitioning plate. Continuous peeling can be performed efficiently.

In the film according to the separator, the wafer bonding film is formed on the outer periphery of the outer periphery of the extending film in the outer peripheral portion of the outer peripheral surface of the wafer bonding film in a plan view. Two points are used as extension starting points, and the two protruding starting points of the protruding piece are used as the protruding protrusions of the protruding front end point, respectively connecting the two extending starting points of the protruding piece and the protruding portion The two line segments extending from the starting point are preferably located at any point passing through the two extending starting points of the aforementioned projecting piece and the inner side of the arc of the two protruding points extending from the starting point. In this form, it can be said that the outer peripheral shape itself of the wafer bonded film is formed into a tapered portion and a relatively large projecting portion which is connected to the tip end portion of the projecting portion. According to this configuration, when the dicing die-bonding film is peeled off from the separator sheet, even if the peeling of the protruding sheet is not performed, it can be formed by peeling over the root portion (or extending the starting point) of the protruding sheet. The protrusion which is tapered to reduce the tensile stress from the partition plate causes peeling, and it is possible to suppress the occurrence of undesired peeling as much as possible.

In the film with the partitioning plate, the two line segments connecting the projecting starting point of the projecting portion and the projecting end point (i.e., the projecting starting point of the projecting piece) are preferably straight lines. Thereby, the protrusion can be easily formed, and the pulling stress from the partition plate can be effectively reduced.

In the film with the partition plate, the two line segments are formed The angle is preferably 120° or more and 175° or less. With this configuration, the pulling stress from the separator can be effectively reduced, and the effective area for attaching the semiconductor wafer in the wafer bonding film can be sufficiently ensured.

The dicing film has a substrate and an adhesive layer laminated on the substrate, and the wafer bonding film may be laminated on the adhesive layer of the dicing film.

1‧‧‧Substrate

2‧‧‧Adhesive layer

3, 23‧‧‧ wafer bonding film

3a, 33a~331‧‧‧Exhibition

3A‧‧‧Outreach

4‧‧‧Semiconductor wafer

5‧‧‧Semiconductor wafer

6‧‧‧Adhesive body

7‧‧‧ Bonded wire

8‧‧‧ Sealing resin

10‧‧‧ Cutting with separator board ‧ wafer bonding film

11‧‧‧ cutting film

12‧‧‧Cutting ‧ wafer bonding film

14‧‧‧ partition board

Fig. 1A is a schematic cross-sectional view showing a dicing die-bonding film with a separator according to an embodiment of the present invention.

Fig. 1B is a perspective plan view showing a wafer bonding film of a dicing die-bonding film with a separator shown in Fig. 1A.

Fig. 2 is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view showing a step of manufacturing a semiconductor device using a dicing die-bonding film according to an embodiment of the present invention.

Fig. 4 is a schematic cross-sectional view showing an example of mounting a semiconductor wafer through a wafer bonding film in a dicing die-bonding film shown in Fig. 1A.

Fig. 5A is an enlarged plan view showing a part of a wafer bonding film according to another embodiment of the present invention.

Figure 5B is a perspective view showing a partition plate according to another embodiment of the present invention. A perspective top view of a wafer bonded film of a ‧ wafer bonded film.

Fig. 6A is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6B is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6C is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6D is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6E is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6F is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6G is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6H is a partially enlarged plan view showing a projecting piece of the die bond film according to another embodiment of the present invention.

Fig. 6I is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6J is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

Fig. 6K is a partially enlarged plan view showing a projecting piece of the wafer bonding film according to another embodiment of the present invention.

6L is a view showing a wafer bonding film according to another embodiment of the present invention. Part of the protruding piece magnifies the top view.

Fig. 6M is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.

<First Embodiment> [Cutting with separator board ‧ wafer bonding film]

Hereinafter, a dicing die-bonding film with a separator according to the first embodiment of the embodiment of the present invention will be described. Fig. 1A is a schematic cross-sectional view showing a dicing die-bonding film with a separator according to an embodiment of the present invention, and Fig. 1B is a perspective plan view thereof. Fig. 2 is a partially enlarged plan view showing a projecting piece of the wafer bonding film shown in Fig. 1B.

As shown in FIGS. 1A and 1B, the dicing die-bonding film 10 with a separator has a structure in which a wafer bonding film 3 and a dicing film 11 which are circular in plan view are sequentially laminated on the elongated separator plate 14. The dicing die-bonding film 12 is constituted by the wafer bonding film 3 and the dicing film 11. In addition, in FIG. 1B, for the convenience of description, the dicing film 11 is not shown, and only the elongated partition plate 14 and the wafer bonding film 3 laminated thereon are shown. The dicing film 11 is formed by laminating the adhesive layer 2 on the substrate 1, and the wafer bonding film 3 having a smaller diameter than the dicing film 11 is laminated on the adhesive layer 2. The dicing film 11 is laminated on the partition plate 14 such that the adhesive layer 2 faces the wafer bonding film 3. In addition, a portion of the dicing film 11 beyond the outer circumference of the wafer bonding film 3 may be as shown in FIG. 1A. It is also not in contact with the partition plate 14, but may be in contact with the partition plate 14.

Although not shown, in the dicing die-bonding film 10 with a separator according to the present embodiment, a plurality of dicing ‧ wafer bonding films 12 are disposed on the elongated separator 14 at a predetermined interval. Thereby, the dicing of the wafer bonding film 12 from the separator 14 and the subsequent bonding to the semiconductor wafer can be performed continuously, and the manufacturing efficiency of the semiconductor device can be improved. From the viewpoint of continuous roll-out, the dicing of the strip with the separator ‧ the wafer bonding film 10 can also be wound into a roll-shaped wound body. In addition, the dicing die-bonding film with a separator may be in the form of a plurality of wafer bonding films disposed at a predetermined interval on the elongated separator plate, and laminated in such a manner as to cover the plurality of wafer bonding films. Strip-shaped cutting film.

(Partition plate)

The strip-shaped partitioning plate 14 has a function as a protective material for protecting the wafer bonding film 3 before being supplied to the actual application. Further, the elongated separator 14 can be further used as a support substrate when the wafer bonding film 3 is transferred onto the adhesive layer 2. The elongated strip 14 is peeled off when the workpiece is adhered to the wafer bonding film 3. Examples of the material of the long strip-shaped separator 14 include polyethylene terephthalate (PET), polyethylene, polypropylene, or a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate release agent. A plastic film or paper after surface coating. Further, the partition plate may be a long object as in the present embodiment, or may have a substantially circular shape in a plan view and a shape having the same size as the dicing film 11.

The thickness of the elongated strip 14 is not particularly limited, and is preferably It is 25 to 100 μm, more preferably 25 to 75 μm, and even more preferably 35 to 60 μm. By setting it as the above range, the strength as the protective material can be maintained, and the wound body of the dicing die-bonding film 10 with the separator can be easily produced.

(wafer bonding film)

As shown in FIG. 1B, the wafer bonding film 3 has a projecting piece 3a which protrudes outward in the outer peripheral portion in a plan view. Further, the dicing film 11 is laminated so as to cover the entire wafer bonding film including the protruding sheet 3a. Further, the die-bonding film 3 may have one projecting piece 3a as shown in Fig. 1B, and may have two or more plurality of projecting pieces 3a.

(stretch out)

2, the sheet 3a so as to protrude from the outer periphery of the two projecting starting E _a, E _a Z is formed from convex to protrude outward manner along the protruding direction. The extension starting points E _a and E _a are points which protrude from the outer side of the base of the wafer bonding film 3 in the circumferential direction. The extension starting points E _a and E _a sandwiching the wafer bonding film 3 and the portion opposite to the protruding sheet 3 a become the base of the wafer bonding film 3 . The projecting piece 3a is slightly diamond-shaped in plan view, and a part of the front end portion having an acute angle is cut by _a line segment extending from the starting points E _a , E _a , specifically, a shape having a shape from the wafer extending along the extending direction Z The root portion of the initial portion of the circular outer circumference of the bonding film passes through the intermediate portion which is swollen in the direction perpendicular to the extending direction Z, and reaches the end portion which is tapered into a V shape. By setting the front end portion of the projecting piece 3a to a V shape, the mechanical strength of the projecting piece 3a can be maintained, and the pulling stress from the partitioning plate 14 can be reduced. Further, since the front end portion can be formed in a straight line, the protruding piece can be easily formed.

Although the inner angle α of the V-shaped front end portion is not particularly limited, the upper limit of the dicing of the wafer bonding film 12 from the separator 14 is preferably 90° or less, more preferably Below 75°. Further, the lower limit of the inner angle α is preferably 30 or more, more preferably 45 or more.

3a of the projecting piece projecting the Z direction perpendicular to the extending direction of the root piece minimum span distance d _min (i.e., the starting point of the present embodiment extends E _a, the distance between E _a) is preferably less than the projecting The maximum span distance d _max of the intermediate portion between the root portion and the tip end portion of the sheet 3a (that is, the distance between the vertices of the tip end portion of the obtuse angle of the present embodiment). By making the root portion of the protruding piece 3a narrower than the intermediate portion, even before the peeling, the end portion (and the intermediate portion) of the protruding piece 3a remains on the side of the partitioning plate 14, and the peeling is peeled off when the root portion is peeled off. Stress is also concentrated on the roots, thus facilitating the cutting of the roots. As a result, a new peeling starting point of the wafer bonding film 3 can be provided in the vicinity of the cut portion of the protruding piece 3a, and the occurrence of peeling defects can be suppressed as much as possible.

The minimum span distance d _{min of the} root is preferably 1 mm or less from the viewpoint of promoting root cutting at the time of peeling. From the viewpoint of the mechanical strength of the root, the lower limit of the minimum span distance d _min is preferably 0.5 mm or more.

The ratio of the minimum span distance d _min of the root to the maximum span distance d _max of the intermediate portion (d _min /d _max ), from the viewpoint of ensuring the balance between the mechanical strength of the projecting piece and the cutting of the root stripping It is preferably 0.7 or less, more preferably 0.5 or less.

The amount of protrusion h of the projecting piece 3a extending from the base portion is not particularly limited as long as the projecting piece 3a functions as a peeling starting point of the dicing die-bonding film 12, but is preferably 1 to 10 mm, more preferably 3 to 3 5mm. Further, the amount of protrusion h is obtained by the distance between the straight line extending from the starting points E _a and E _{a and} the straight line passing through the leading end point of the extending piece 3a perpendicular to the extending direction Z. When the straight line extending from the starting points E _a , E _a is not perpendicular to the extending direction Z, the straight line bisects the line connecting the starting points E _a , E _a and the end points passing through the front end of the protruding piece 3a The distance between the straight lines perpendicular to the extending direction Z is found.

The amount of protrusion h _mid of the intermediate portion of the projecting piece 3a extending from the base portion is not particularly limited, but is preferably 0.5 to 10 mm, more preferably 0.5 to 5 mm. Further, the amount of protrusion h _mid of the intermediate portion is obtained by the distance between the straight line passing through the extended starting points E _a and E _{a and} the straight line passing through the two points of the maximum span distance d _max of the intermediate portion of the extending piece 3a. . When _a straight line extending from the starting point E _a , E _a or by obtaining two points of the maximum span distance d _max of the intermediate portion of the projecting piece 3a is not perpendicular to the extending direction Z, the starting point E is extended by a straight line. _The distance between the bisector of the line segment connecting _a and E _a is determined by the distance between the bisectors of the line segment connecting the two points of the maximum span distance d _max of the intermediate portion of the projecting piece 3a in a straight line.

As shown in FIG. 1B, the projecting piece 3a is preferably disposed along the longitudinal direction X of the elongated attached partitioning plate 14. In the cutting ‧ wafer bonding thin When the film 12 is continuously peeled off from the elongated film 10 with the separator attached, if the protruding piece 3a is disposed along the longitudinal direction X of the elongated partitioning plate 14, the peeling direction is separated from the long strip. Since the longitudinal direction X of the plate 14 is parallel, continuous peeling can be performed efficiently.

Further, when the projecting piece is disposed along the longitudinal direction X of the elongated partitioning plate 14, it is preferable to have both end portions of the wafer bonding film 3 along the longitudinal direction X of the elongated partitioning plate 14 (in FIG. 1B). The illustrated wafer-bonding film 3 is provided with a projecting piece provided with a left end of the projecting piece 3a and a right end of the opposite side of which the protruding piece is not provided. Thereby, in particular, regardless of the winding direction of the slit-shaped wafer-bonding film 10 formed as a long strip-shaped separator of the wound body, the continuous peeling of the wafer-bonding film 12 can be performed.

(constituting material of wafer bonding film, etc.)

As shown in the present embodiment, the layer structure of the wafer bonding film 3 is exemplified by a structure in which only a single layer of an adhesive layer is formed, or a multilayer structure in which an adhesive layer is formed on one surface or both surfaces of a core material. As for the above core material, it is exemplified by a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a glass fiber or A resin substrate, a ruthenium substrate, or a glass substrate reinforced with a non-woven fabric made of plastic.

The adhesive composition constituting the die-bonding film 3 is exemplified by a thermoplastic resin and a thermosetting resin.

As the above thermosetting resin, it is exemplified as a phenol resin or an amine. A base resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a polyoxyxylene resin, or a thermosetting polyimide resin. These resins may be used singly or in combination of two or more. In particular, an epoxy resin having a small content of ionic impurities or the like which corrodes a semiconductor element is preferable. Further, the hardener of the epoxy resin is preferably a phenol resin.

The epoxy resin is not particularly limited as long as it is usually used as an adhesive composition, and for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, and hydrogenation can be used. Bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolac type, o-cresol novolac type, tris(hydroxyphenyl)methane type, tetrakis(hydroxyphenyl)ethane type An epoxy resin such as a difunctional epoxy resin or a polyfunctional epoxy resin, or a carbendazim type, an isocyanuric acid triglycidyl ester type or a glycidylamine type. These may be used singly or in combination of two or more. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a tris(hydroxyphenyl)methane type epoxy resin or a tetrakis (hydroxyphenyl)ethane type epoxy resin is preferable. The reason for this is that the epoxy resin is highly reactive with a phenol resin as a curing agent, and is excellent in heat resistance and the like.

The phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a phenol biphenyl resin. A novolak type phenol resin such as a nonylphenol novolak resin, a resol type phenol resin, a polyhydroxy styrene such as polyparaxyl styrene or the like. These may be used singly or in combination of two or more. Among these phenol resins, phenol novolak resin, phenol aralkyl resin and the like are preferred. its The reason is that the connection reliability of the semiconductor device can be improved.

The blending ratio of the epoxy resin and the phenol resin is preferably such that the epoxy group in the epoxy resin component is equivalent to 1 equivalent of the epoxy group and the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents. More preferably 0.8 to 1.2 equivalents. In other words, if the blending ratio of the two is outside the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to be deteriorated.

As the thermoplastic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutylene may be mentioned. Alkene resin, polycarbonate resin, thermoplastic polyimide resin, nylon 6 or nylon 6,6, etc. Polyamide resin, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, polyamidoxime Imine resin or fluorine-containing resin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin having a small amount of ionic impurities, high heat resistance, and reliability of a semiconductor element is preferable.

The acrylic resin is not particularly limited, and examples thereof include one or two or more kinds of acrylates or methacrylates having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18. A polymer (acrylic copolymer) of the component or the like. The alkyl group may, for example, be a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group or a cyclohexyl group. -ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl Alkyl or eicosyl and the like.

Further, the other monomer forming the polymer is not particularly limited, and examples thereof include a glycidyl group-containing monomer such as glycidyl acrylate or glycidyl methacrylate, acrylic acid, methacrylic acid, and carboxyethyl acrylate. a carboxyl group-containing monomer such as carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid; an anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, (meth)acrylic acid 10 - Hydroxy oxime ester, 12-hydroxylauryl (meth) acrylate or hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)-methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2-(A Sulfhydryl amide-methyl-2-methylpropanesulfonic acid, (meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate or (meth) propylene phthaloxy naphthalene sulfonic acid A phosphate group-containing monomer such as an acid group monomer or a acrylofluoride-2-hydroxyethyl group; a styrene monomer; or acrylonitrile.

Further, in the wafer bonding film 3, a filler can be appropriately formulated depending on the use thereof. The formulation of the filler can impart conductivity or improve thermal conductivity, adjust elastic modulus, and the like. The filler is exemplified by an inorganic filler and an organic filler. From the viewpoint of improving workability, improving thermal conductivity, adjusting melt viscosity, and imparting characteristics such as thixotropic properties, an inorganic filler is preferred. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate. Whisker, boron nitride, crystalline dioxygen Huayu, amorphous cerium oxide, and the like. These may be used singly or in combination of two or more. From the viewpoint of improving thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, or amorphous cerium oxide is preferred. Further, from the viewpoint of a good balance of the above characteristics, crystalline ceria or amorphous ceria is preferred. Further, in order to impart conductivity, improve thermal conductivity, and the like, a conductive material (conductive filler) may be used as the inorganic filler. Examples of the conductive filler include a metal powder such as silver, aluminum, gold, copper, nickel, or a conductive alloy formed into a spherical shape, a needle shape, or a flake shape, a metal oxide such as alumina, amorphous carbon black, or graphite. The filler has an average particle diameter of 0.1 to 80 μm. Further, the average particle diameter of the filler is, for example, a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, device name: LA-910).

The amount of the filler is preferably 5 parts by weight or more, more preferably 10 parts by weight or more and 95 parts by weight or less, still more preferably 20 parts by weight or more, based on 100 parts by weight of the total of the thermosetting resin component, the thermoplastic resin component, and the filler. And 90 parts by weight or less.

Further, in addition to the above filler, the wafer bonding film 3 may be appropriately blended with other additives as needed. Examples of other additives include a flame retardant, a decane coupling agent, an ion trapping agent, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These may be used singly or in combination of two or more. The aforementioned decane coupling agent may, for example, be β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyl group. Diethoxydecane, etc. These compounds can be made separately Use or use two or more types together. Examples of the ion trapping agent include hydrotalcites, barium hydroxide, and the like. The plasma capturing agent may be used singly or in combination of two or more.

The thickness of the wafer bonding film 3 (the total thickness in the case of a laminate) is not particularly limited, and may be, for example, selected from the range of 1 to 200 μm, preferably 5 to 100 μm, more preferably 10 to 80 μm.

(substrate)

The base material 1 is preferably one having ultraviolet light transmittance and is a strength matrix of the dicing film 11. Listed as, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutylene, polymethyl Polyolefin such as pentene, ethylene-vinyl acetate copolymer, ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, ethylene-butene Copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polyester, polycarbonate, polyimide, polyether ether Ketones, polyimines, polyetherimine, polyamines, wholly aromatic polyamines, polyphenylene sulfides, linalylamines (paper), glass, glass cloth, fluororesin, polyvinyl chloride, poly Vinylidene chloride, cellulose resin, polyoxyxylene resin, metal (foil), paper, and the like.

Further, as the material of the substrate 1, a polymer such as a crosslinked product of the above resin may be mentioned. The aforementioned plastic film may be used without stretching, and may be subjected to uniaxial or biaxial stretching treatment as needed. If it is stretched, etc. In order to impart heat shrinkability to the resin sheet, the substrate 1 is thermally shrunk after dicing, whereby the adhesive area of the adhesive layer 2 and the wafer bonding film 3 can be reduced, so that the semiconductor wafer can be easily recovered (semiconductor element) ).

Further, in order to improve adhesion to the adjacent layer, retention, and the like, the surface of the substrate 1 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, ionizing radiation treatment, and the like. Or a physical treatment or a coating treatment using a primer (for example, an adhesive described later). The substrate 1 may be appropriately selected from the same species or different types, and a plurality of materials may be blended as needed.

The thickness of the substrate 1 is not particularly limited and may be appropriately determined, but is generally about 5 to 200 μm.

(adhesive layer)

The adhesive used for the formation of the adhesive layer 2 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. The pressure-sensitive adhesive is preferably an acrylic polymer-based polymer from the viewpoints of cleaning and washing properties of an organic solvent such as an ultrapure water or an alcohol, such as a semiconductor wafer or glass. Acrylic adhesive.

The acrylic polymer may, for example, be an alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, or third butyl ester). , amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, thirteen Alkyl ester, tetradecane a carbon number of an alkyl group such as an ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester of 1 to 30, particularly a linear or branched alkyl ester having a carbon number of 4 to 18, and a (meth)acrylic acid ring An acrylic polymer or the like having one or two or more kinds of alkyl esters (for example, cyclopentyl ester or cyclohexyl ester) as a monomer component. Further, (meth) acrylate means acrylate and/or methacrylate, and all (meth) of the present invention have the same meaning.

In order to improve cohesive force, heat resistance, and the like, the acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl (meth)acrylate, if necessary. The monomer component may, for example, be a carboxyl group such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid. Monomer; anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, ( 6-hydroxyhexyl methacrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (meth) acrylate (4) a hydroxyl group-containing monomer such as -hydroxymethylcyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (meth)acryl a sulfonic acid group-containing monomer such as amidinopropanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid or the like; a phosphate-containing monomer such as 2-hydroxyethyl phosphonium phosphate Body; acrylamide, acrylonitrile, and the like. These monomerizable copolymerizable components may be used alone or in combination of two or more. The amount of the copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.

In addition, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization as needed. The polyfunctional monomer may, for example, be hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol. Di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, ring Oxygen (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion characteristics and the like.

The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be carried out by any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferred that the content of the low molecular weight substance is small. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

Further, in order to increase the number average molecular weight of the acrylic polymer or the like of the base polymer, an external crosslinking agent may be suitably used in the above-mentioned adhesive. A specific means of the external crosslinking method is a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent, and reacting them. In the case of using an external crosslinking agent, the amount used is based on the balance with the base polymer to be crosslinked. And it is appropriately determined as the use of the adhesive. In general, it is preferably formulated in an amount of 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, if necessary, in addition to the above-mentioned components, additives such as various conventional adhesion-imparting agents and anti-aging agents may be used in the adhesive.

The adhesive layer 2 can be formed of a radiation hardening type adhesive. The radiation-curable adhesive can increase the degree of crosslinking by irradiating radiation such as ultraviolet rays, and the adhesion can be easily lowered. The interface between the adhesive layer 2 and the wafer bonding film 3 which is cured by the radiation irradiation to harden the radiation-curable adhesive layer 2 and has a low adhesive force has a property of being easily peeled off at the time of pick-up.

The radiation curable adhesive can be cured without any particular limitation by using a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness. The radiation-curable adhesive is exemplified by an addition type radiation-hardening type in which a radiation-curable monomer component or an oligomer component is blended in a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Adhesive.

The radiation curable monomer component to be blended may, for example, be a urethane oligomer, a urethane (meth) acrylate, a trimethylolpropane tri(meth) acrylate, or a tetrahydroxy group. Methyl methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate , 1,4-butanediol di(meth)acrylate, and the like. In addition, the radiation curable oligomer component can be listed Examples of the various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type have a molecular weight of preferably from about 100 to about 30,000. The amount of the radiation curable monomer component or the oligomer component can be appropriately determined depending on the kind of the above-mentioned adhesive layer to reduce the adhesion of the adhesive layer. In general, it is, for example, 5 parts by weight to 500 parts by weight, preferably about 40 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

Further, as the radiation-curable adhesive, in addition to the above-described added radiation-curable adhesive, a base polymerization having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal may be used. An intrinsic type of radiation hardening adhesive. The intrinsic radiation hardening type adhesive does not need to contain or contain a large amount of oligomer components of a low molecular component, and therefore, the oligomer component or the like does not migrate in the adhesive over time, and a stable layer structure can be formed. Adhesive layers are preferred.

The aforementioned base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. The base polymer is preferably an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer can be exemplified by the above-exemplified acrylic polymer.

The method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. However, introduction of a carbon-carbon double bond into a polymer side chain is relatively easy in molecular design. For example, after copolymerizing a monomer having a functional group in an acrylic polymer in advance, a compound having a functional group reactive with the functional group and a carbon-carbon double bond is maintained. A method of performing condensation or addition reaction under radiation hardening of a carbon-carbon double bond.

Examples of combinations of such functional groups include a carboxyl group, an epoxy group, a carboxyl group and an aziridine group, a hydroxyl group and an isocyanate group. The combination of these functional groups is preferably a combination of a hydroxyl group and an isocyanate group from the viewpoint of easiness of reaction tracking. Further, when a combination of the above-mentioned functional groups is used to form the above-mentioned acrylic polymer having a carbon-carbon double bond, the functional group may be on either side of the acrylic polymer and the above compound, In the preferred combination, the acrylic polymer preferably has a hydroxyl group and the above compound has an isocyanate group. In this case, the isocyanate compound having a carbon-carbon double bond may, for example, be methacryl oxime isocyanate, 2-methacryloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbiphenyl hydrazine. Isocyanate, etc. Further, as the acrylic polymer, a hydroxyl group-containing monomer exemplified above, an ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether, or the like can be used. Aggregated.

The above-mentioned intrinsic radiation-curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be formulated with the radiation curable monomer component or the degree of deterioration of properties. Oligomer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

The radiation curable adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propane) Α-keto alcohol compound such as ketone, α-hydroxy-α,α′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxy Acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)benzene Acetophenone-based compound such as 2-morpholinopropan-1-one; benzoin ether compound such as benzoin ether, benzoin isopropyl ether or fentanyl methyl ether; biphenyl fluorene dimethyl a ketal compound such as a ketal; an aromatic sulfonium chloride compound such as 2-naphthalenesulfonium chloride; or a photoactive activity such as 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)anthracene Lanthanide compounds; benzophenone compounds such as benzophenone, benzamidine benzoic acid, 3,3'-dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxene Ketone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2 a thioxanthone compound such as 4-diisopropylthioxanthone; camphorquinone; a halogenated ketone; a fluorenylphosphine oxide; a decylphosphonate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 parts by weight to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

In addition, as the radiation-curable adhesive, an addition polymerizable compound having two or more unsaturated bonds and an alkoxydecane having an epoxy group disclosed in JP-A-60-196956, for example, may be mentioned. A photopolymerizable compound, a rubber-based adhesive such as a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or a phosphonium salt compound, or an acrylic adhesive.

Further, in the case where the curing is caused by oxygen at the time of radiation irradiation, it is preferred to use any method to make the radiation-curable adhesive layer 2 The surface is blocked with oxygen (air). For example, a method of covering the surface of the above-mentioned adhesive layer 2 with a partition plate or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.

The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 μm to 50 μm from the viewpoint of preventing the chip cut surface from being damaged and the adhesion of the adhesive layer. It is preferably 2 μm to 30 μm, more preferably 5 μm to 25 μm.

[Cutting with separator plate ‧ method of manufacturing wafer bonded film]

The dicing sheet-bonding film 10 with a separator according to this embodiment can be produced, for example, by the following method.

First, the substrate 1 can be formed into a film by a conventional film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, a blow molding method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry layer method. Wait. In the case where the substrate 1 is to be colored, the above coloring material is added.

Next, an adhesive composition solution is applied onto the substrate 1 to form a coating film, and then the coating film is dried under specific conditions (heat-crosslinking as needed) to form the adhesive layer 2. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be carried out, for example, at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, the coating film may be formed by applying an adhesive composition to the separator, and then the coating film may be dried under the above drying conditions to form the adhesive layer 2. Then, the adhesive layer 2 is attached to the base together with the separator On the material 1. Thereby, the dicing film 11 is produced.

The wafer bonding film 3 is produced, for example, by the following method.

First, a solution of an adhesive composition of a material for forming the wafer bonding film 3 is prepared. In the adhesive composition solution, as described above, the above-described adhesive composition, filler, various other additives, and the like are blended.

Next, the adhesive composition solution is applied onto the substrate to a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form a wafer bonding film precursor. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be carried out, for example, at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes. Further, after the coating composition is applied onto the separator to form a coating film, the coating film is dried under the drying conditions to form a wafer bonding film precursor. Then, the wafer bonding film precursor is attached to the substrate separator together with the separator.

Then, the obtained wafer bonding film precursor is die-cut or cut in such a manner as to have a specific plan view shape, and a wafer bonding film 3 having a protruding sheet is produced.

Next, the separator is peeled off from the dicing film 11 and the wafer bonding film 3, and the wafer bonding film 3 and the adhesive layer 2 are bonded to each other so that the bonding film 2 can be bonded to each other. The bonding can be performed, for example, by pressing. At this time, the lamination temperature is not particularly limited, and is, for example, preferably 30 to 50 ° C, more preferably 35 to 45 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.1 to 20 kgf/cm, more preferably 1 to 10 kgf/cm.

Finally, the substrate separator on the wafer bonding film 3 is peeled off. The film was bonded to the separator to obtain a dicing die-bonding film 10 with a separator attached to the present embodiment. In the present embodiment, a plurality of slit ‧ wafer bonded films 12 are bonded to the partition plate 14 at a specific interval by using the long partition plate 14 as a partition plate. The film 10 of the long strip-shaped separator can be wound into a roll shape and used in the form of a wound body.

[Method of Manufacturing Semiconductor Device]

Hereinafter, a case where the dicing die-bonding film 10 with a separator is used will be described with reference to FIGS. 1B, 3, and 4 as an example. Fig. 3 is a cross-sectional view showing a step of manufacturing a semiconductor device using the dicing die-bonding film of the present embodiment, and Fig. 4 is a view showing the cutting of the separator plate shown in Fig. 1A. A schematic cross-sectional view of an example of mounting a semiconductor wafer on a wafer bonding film in a wafer bonding film.

As shown in Fig. 1B, the film 10 with the separator is continuously wound up in the unwinding direction Y. Then, the dicing die-bonding film 12 is peeled off from the elongated separator 14 by a known wafer mounting device, and as shown in FIG. 3, the semiconductor wafer 4 is pressed against the diced ‧ wafer bonding film 12 On (attachment step). The peeling is performed from the side of the wafer bonding film 3 on which the projecting piece 3a is formed. Thereby, the projecting piece 3a serves as a peeling starting point, and the dicing/wiring film 12 can be easily peeled off. Further, by forming the projecting piece 3a along the longitudinal direction X of the elongated partitioning plate 14, the peeling starting point can always be located on the front end side of the unwinding direction Y, and therefore, can be on the elongated partitioning plate 14. The cutting at the constant position starts the dicing of the unwinding ‧ the wafer bonding film 12 is detached, and the complicated work for peeling can be suppressed.

The attaching step is performed simultaneously by pressing by a pressing means such as a pressure roller. The attachment temperature at the time of mounting is not particularly limited, and for example, it is preferably in the range of 20 to 80 °C.

Next, the dicing of the semiconductor wafer 4 is performed. Thereby, the semiconductor wafer 4 is diced into a specific size and singulated, and the semiconductor wafer 5 is manufactured (refer FIG. 4). The dicing is performed, for example, from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called full cutting which is cut into the wafer bonding film 3 or the like can be employed. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used. Further, since the semiconductor wafer 4 is subsequently fixed by the dicing ‧ the wafer bonding film 12, wafer defects or wafer scattering can be suppressed and damage of the semiconductor wafer 4 can be suppressed.

In order to peel off the semiconductor wafer 5 which is subsequently fixed by the dicing ‧ wafer bonding film 12, the semiconductor wafer 5 is picked up. The picking method is not particularly limited, and various methods known in the art can be employed. For example, a method in which each semiconductor wafer 5 is lifted up from the side of the dicing film 11 by a needle and the semiconductor wafer 5 that is lifted up is picked up by a pick-up device can be cited.

Here, in the case where the adhesive layer 2 is of an ultraviolet curing type, the pickup is performed after the adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 2 to the wafer bonding film 3 is lowered, and the peeling of the semiconductor wafer 5 is facilitated. As a result, pickup can be performed without damaging the semiconductor wafer 5. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. In addition, as a light source used in ultraviolet irradiation, a high pressure mercury lamp or a microwave can be used. Hair light, chemical light, etc.

The picked semiconductor wafer 5 is then fixed to the adherend 6 through the wafer bonding film 3 (wafer bonding). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, or a separately fabricated semiconductor wafer. The adherend 6 may be, for example, a deformed adherend that is easily deformed, or a non-deformable adherend (semiconductor wafer or the like) that is not easily deformed.

As the substrate, a conventionally known substrate can be used. Further, as the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame or a glass epoxy resin, BT (bismaleimide-triazine) or polyimine may be used. Organic substrate. However, the present invention is not limited thereto, and includes a circuit board that can be mounted with a semiconductor element and electrically connected to the semiconductor element.

In the case where the wafer bonding film 3 is of a thermosetting type, the semiconductor wafer 5 is subsequently fixed to the adherend 6 by heat hardening, thereby improving heat resistance. The heating temperature can be carried out at 80 to 200 ° C, preferably 100 to 175 ° C, more preferably 100 to 140 ° C. Further, the heating time may be 0.1 to 24 hours, preferably 0.1 to 3 hours, more preferably 0.2 to 1 hour. Further, the semiconductor wafer 5 is subsequently fixed to the substrate or the like through the wafer bonding film 3, and the reflow soldering step is available.

The shearing force of the wafer bonding film 3 after heat curing is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, to the adherend 6 . If the shear bonding force of the wafer bonding film 3 is at least 0.2 MPa or more, it is not caused by the step in the wire bonding step. Ultrasonic vibration or heating causes shear deformation at the bonding surface of the wafer bonding film 3 and the semiconductor wafer 5 or the adherend 6. In other words, the semiconductor element does not move due to ultrasonic vibration during wire bonding, and thus the success rate of wire bonding can be prevented from decreasing.

Further, in the method of manufacturing a semiconductor device of the present embodiment, the wire bonding can be performed without performing the heat curing step of the wafer bonding film 3 by heat treatment, and the semiconductor wafer 5 can be sealed with a sealing resin, and the sealing resin can be sealed. hardening. At this time, the shearing force at the time of temporarily fixing the wafer bonding film 3 to the adherend 6 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa. If the shearing force at the time of temporarily fixing the wafer bonding film 3 is at least 0.2 MPa or more, the wafer bonding is not performed by ultrasonic vibration or heating in this step even if the wire bonding step is not performed in the heating step. Shear deformation occurs between the film 3 and the semiconductor wafer 5 or the adhesion surface of the adherend 6. In other words, the semiconductor element does not move due to ultrasonic vibration when the metal wires are joined, whereby the success rate of the metal wire bonding can be prevented from decreasing.

The metal wire bonding is a step of electrically connecting the tip end of the terminal portion (internal lead) of the adherend 6 to an electrode pad (not shown) on the semiconductor wafer 5 by the bonding metal wire 7. As the bonding metal wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is carried out in the range of 80 to 250 ° C, preferably 80 to 220 ° C. In addition, the heating time is performed for several seconds to several minutes. The connection line is performed by combining the vibration energy of the ultrasonic wave and the pressure contact energy generated by the application of pressure in a state where the temperature is within the above temperature range. This step is also not The wafer bonding film 3 is thermally cured.

The sealing step described above is a step of sealing the semiconductor wafer 5 with a sealing resin 8. This step is performed to protect the semiconductor wafer 5 or the bonding metal wires 7 mounted on the adherend 6. This step is carried out by molding a resin for sealing with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually carried out at 175 ° C for 60 to 90 seconds, but the present invention is not limited thereto, and for example, it may be hardened at 165 to 185 ° C for several minutes. Thereby, the semiconductor wafer 5 and the adherend 6 are fixed by the wafer bonding film 3 while the sealing resin is cured. That is, in the present invention, in the case where the post-hardening step described later is not performed, the wafer bonding film 3 can be fixed in this step, which contributes to a reduction in the number of manufacturing steps and a reduction in the manufacturing time of the semiconductor device.

In the post-hardening step, the sealing resin 8 which is insufficiently hardened in the sealing step is completely cured. Even in the case where the wafer bonding film 3 is not completely thermally hardened in the sealing step, the wafer bonding film 3 can be completely thermally hardened together with the sealing resin 8 in this step. The heating temperature in this step varies depending on the type of the sealing resin, but may be, for example, in the range of 165 to 185 ° C, and the heating time is from about 0.5 hours to about 8 hours.

<Second embodiment>

The die bond film of the first embodiment has a projecting piece that protrudes outward from the outer periphery. The wafer bonding film of the second embodiment has a tapered portion formed as a region of the base portion of the wafer bonding film, and a protruding sheet described in the first embodiment is connected to the front end portion thereof. Below, the party The formula is explained.

As shown in FIG. 5A, in the film with a separator according to the present embodiment, in the wafer bonding film 23, a part of the outer periphery of the wafer bonding film 23 in a plan view is formed so as to sandwich the above-mentioned projecting piece 3a on the outer periphery. Two points on the outer circumference of the two extending starting points E _a , E _a as the extending starting points E _A , E _A and the two extending starting points E _a , E _{a of the} protruding piece 3 _a as the extended front end point Conical extension 3A. Two line segments L _A , L _A connecting the two extending starting points E _a , E _a of the projecting piece 3 _a and the two extending starting points E _A , E _{A of the} protruding portion 3A are respectively located through the protruding piece 3a Two points extending from the starting points E _a , E _a and the inner sides of the arcs C _A , C _A of the three points of the protruding portion 3A extending from the starting points E _A , E _A . Therefore, the wafer bonding film 23 has a relatively large tapered projecting portion 3A and a relatively small projecting piece 3a joined to the front end portion of the projecting portion 3A. Whereby when, during the cutting peeled from the partition plate ‧ wafer bonding film, even without extending the release sheet 3a, projecting beyond the root 3a in the release sheet (or extended starting E _a, E _a), may The protrusion 3A which is reduced in the tensile stress from the partition plate by being formed into a tapered shape causes peeling, and it is possible to suppress the occurrence of a problem of unintended peeling as much as possible.

The connecting portions 3A of the two projecting extended starting point E _A, E _A and the projecting distal end point (i.e., projecting pieces projecting starting point E _a, E _a) of the two line segments L _A, L _A is located just above The inner side of the circular arcs C _A and C _A (the center of gravity of the wafer bonding film) may be any one of a straight line, a curved line, or a combination thereof. When the two line segments L _A and L _A are curved, as long as they are located inside the circular arcs C _A and C _A , they may be curved outwardly with respect to the center of gravity of the die bond film, or may be associated with the wafer bonding film. A curve in which the center of gravity protrudes toward the inside. Among them, it is preferable that two line segments L _A and L _A are straight lines. Thereby, the projecting portion 3A can be easily formed, and the pulling stress from the partitioning plate can be effectively reduced.

When the two line segments L _A and L _A are straight lines, the angle β formed is preferably 120° or more and 175° or less, more preferably 130° or more and 160° or less. By setting the inner angle β of the front end portion of the overhang portion 3A to the above range, the pulling stress from the partition plate can be effectively reduced, and the semiconductor wafer 4 for attaching the semiconductor wafer 4 can be sufficiently ensured. (Refer to Figure 3) The effective area.

As shown in FIG. 5B, the projecting piece 3a and the projecting portion 3A are preferably arranged along the longitudinal direction X of the elongated partitioning plate 14 for the same reason as in the first embodiment. Specifically, as shown in FIG. 5B, it is preferable that the extending portions 3a, 3a' and the protruding portions 3A, 3A' are provided at both end portions of the wafer bonding film 23 along the longitudinal direction X of the elongated partitioning plate 14. .

<Other Embodiments>

The deformation of the projecting piece according to another embodiment of the present invention is shown, for example, in Figs. 6A to 6M. By having the wafer bonding film having the projecting sheets 33a to 33m shown in Figs. 6A to 6M, the dicing of the wafer bonding film from the separator can be easily performed. The structural features of the projecting piece in the first embodiment can be similarly applied to the projecting pieces 33a to 33m.

[Examples]

Hereinafter, preferred embodiments of the present invention will be exemplarily described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the invention, unless otherwise specified. In addition, hereinafter, "parts" means parts by weight.

[Example 1] (Production of wafer bonding film)

The following (a) to (d) were dissolved or dispersed in methyl ethyl ketone to obtain a binder composition solution having a concentration of 25% by weight. Further, the parts (a) to (d) below refer to the number of parts of the solid component.

(a) 11 parts of epoxy resin (Nippon Chemical Co., Ltd., EPPN-501HY)

(b) phenol resin (Minghe Chemical Co., Ltd., MEH7851M) 14 parts

(c) 100 parts of acrylic rubber (made by NAGASE CHEMTEX, SG-P3)

(d) spherical silica (manufactured by ADMATECHS, SO-E2) 67 parts

The solution of the adhesive composition was applied to a release-treated film (separator) made of a polyethylene terephthalate film having a thickness of 50 μm which was subjected to mold release treatment with polysiloxane, at 130 ° C. Dry for 2 minutes. Thereby, a wafer bonded film precursor having a thickness of 25 μm was produced.

The fabricated wafer bonding film precursor was punched so that the base became a circular shape having a diameter of 330 mm and had the shape shown in FIG. The wafer was stretched to produce a wafer bonding film of the present embodiment having the planar shape as shown in Fig. 1B as a whole. The shape details of the protruding piece are shown in Table 1.

(with the cutting of the separator board, the fabrication of the wafer bonding film)

Next, the wafer bonding film having the protruding sheet was transferred onto a dicing film (manufactured by Nitto Denko Corporation, trade name "DU-2187G"). The transfer is performed in such a manner that the adhesive layer of the dicing film is opposed to the wafer bonding film. The laminate was punched into a circular shape so that the diameter of the dicing film was 370 mm, whereby the ‧ wafer-bonding film with the separator of the present embodiment was obtained.

[Example 2]

The wafer bonding film precursor produced in the same manner as in Example 1 was punched so that the base portion became a circular shape having a diameter of 330 mm and had a projecting piece and a projecting portion having the shape shown in Fig. 5A, and the entire shape having the plan view shape of Fig. 5B was produced. A dicing/wafer bonding film with a separator was produced in the same manner as in Example 1 except that the wafer bonding film was used. Further, the shape of the projecting piece is the same as that of the first embodiment. The shape details of the protruding piece are shown in Table 1.

[Example 3]

A dicing die-bonding film with a separator was produced in the same manner as in Example 1 except that the shape of the projecting piece was set to the shape shown in Fig. 6M. The shape details of the protruding piece are shown in Table 1.

[Example 4]

A dicing die-bonding film with a separator was produced in the same manner as in Example 1 except that the shape of the projecting piece was set to the shape shown in Fig. 6C. The shape details of the protruding piece are shown in Table 1.

[Comparative Example 1]

A dicing die-bonding film with a separator was produced in the same manner as in Example 1 except that the projecting sheet was not provided with a projecting sheet and a circular shape having a diameter of 330 mm. The shape details of the protruding piece are shown in Table 1.

<Release evaluation of separator board>

Using a wafer mounter (manufactured by Nitto Seiki Co., Ltd., trade name "MA3000II"), the separator was peeled off from the ‧ wafer bonded film of the separator sheets of the examples and the comparative examples. Further, in Examples 1 to 4, peeling was performed from the side where the protruding sheet was provided. When the wafer-bonding film is peeled off from the dicing film (when the wafer-bonding film remains on the separator), the peeled portion of the dicing film reaches the region on the wafer-bonding film to which the 12-inch wafer is to be attached, and the sample is evaluated as defective, and the sample is sampled. The number was set to 50, and the defect rate {(number of defectives / total number of samples) × 100 (%)} was determined. The results are shown in Table 1.

<Result>

As is apparent from the results of Table 1, it is possible to easily perform the dicing of the dicing of the wafer bonding film from the separator by providing the projecting sheet which protrudes outward in the outer peripheral portion of the wafer bonding film.

3‧‧‧ wafer bonding film

3a‧‧‧Exhibition

14‧‧‧ partition board

Claims (12)

A cutting with a dividing plate. The wafer bonding film is formed by laminating the separator, the wafer bonding film having the protruding sheet protruding outward in the outer peripheral portion in plan view, and the dicing film in this order. Such as the cutting of the separator board of claim 1. A wafer bonding film, wherein the aforementioned protruding sheet has a tapered front end. Such as the cutting of the separator board of claim 2. The wafer bonding film, wherein the protruding sheet has a V-shaped front end. Such as the cutting of the partition board of claim 3. In the wafer bonding film, the inner angle of the front end portion of the V-shape is 30° or more and 90° or less. Such as the cutting of the separator board of claim 1. a wafer bonding film, wherein a minimum span distance of a root portion of the protruding sheet in a direction perpendicular to a protruding direction of the protruding sheet is smaller than a maximum of an intermediate portion between a root portion and a front end portion of the protruding sheet Span distance. Such as the cutting of the separator plate of claim 5. The wafer bonding film wherein the root portion has a minimum span distance of 1 mm or less. Such as the cutting of the separator board of claim 1. The wafer bonding film, wherein the separator is an elongated separator. Such as the cutting of the partition board of claim 7. The wafer bonding film, wherein the protruding sheet is disposed along a length direction of the elongated separator. The cutting of the separator plate according to any one of claims 1 to 8. a wafer bonding film, wherein the wafer bonding film has two points on the outer circumference of the outer periphery of the wafer bonding film in a plan view, with two extending ends sandwiching the protruding sheets on the outer circumference As extended And the two protruding starting points of the protruding piece are used as the protruding protrusions extending from the front end point, respectively connecting the two extending starting points of the protruding piece and the two extending starting points of the protruding portion The line segment is located inside the arc passing through either of the two extended starting points of the aforementioned projecting piece and the three points of the extending end of the protruding portion. Such as the cutting of the separator plate of claim 9. A wafer bonding film in which the aforementioned two line segments are straight lines. Such as the cutting of the separator board of claim 10. The wafer bonding film, wherein the angle formed by the two line segments is 120° or more and 175° or less. Such as the cutting of the separator board of claim 1. A wafer bonding film, wherein the dicing film has a substrate and an adhesive layer laminated on the substrate, and the wafer bonding film is laminated on the adhesive layer of the dicing film.