CN103794530A - Cutting/chip bonding film with separation piece - Google Patents

Cutting/chip bonding film with separation piece Download PDF

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Publication number
CN103794530A
CN103794530A CN201310499530.0A CN201310499530A CN103794530A CN 103794530 A CN103794530 A CN 103794530A CN 201310499530 A CN201310499530 A CN 201310499530A CN 103794530 A CN103794530 A CN 103794530A
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China
Prior art keywords
die bonding
bonding film
partition
dicing
sheet
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Granted
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CN201310499530.0A
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Chinese (zh)
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CN103794530B (en
Inventor
菅生悠树
村田修平
大西谦司
木村雄大
柳雄一朗
井上刚一
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Nitto Denko Corp
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)

Abstract

The invention relates to a cutting/chip bonding film with a separation piece, and the cutting/chip bonding film can be easily peeled off the separation piece. A separation piece, a chip bonding film having an outwardly convex extending piece at the periphery viewed in an overlooked manner, and a cutting film are laminated in order to finally obtain the cutting/chip bonding film with a separation piece.

Description

With the dicing/die bonding film of partition
Technical field
The present invention relates to the dicing/die bonding film with partition.
Background technology
In the past, in the manufacturing process of semiconductor device, used the dicing/die bonding film (for example, referring to Patent Document 1) that is laminated with thermosetting die bonding film on cutting film.In the manufacturing process of semiconductor device that uses this dicing/die bonding film, first semiconductor wafer is fitted on dicing/die bonding film and is fixed, and cut under this state.Thus, semiconductor wafer is turned to the size of regulation by small pieces, become semiconductor chip.Then,, for the semiconductor chip being fixed on dicing/die bonding film is peeled off from cutting film, carry out picking up of semiconductor chip.Then, semiconductor chip picked together with die bonding film is fixed on the adherends such as substrate by die bonding film.
For above-mentioned dicing/die bonding film, according to the size of semiconductor wafer and separately stamping-out is that circular etc. cutting film and die bonding film is laminated.Dicing/die bonding film take die bonding film as laminating side with the arranged spaced of regulation to the partition of long size.While laminating with semiconductor wafer, use device for mounting wafer etc. is peeled off dicing/die bonding film from partition, then paste on semiconductor wafer.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2008-218571 communique
Summary of the invention
Partition generally utilizes release agent etc. to carry out demoulding processing in order to improve the fissility of dicing/die bonding film.But when partition is peeled off dicing/die bonding film, peeling off between partition and die bonding film can not successfully be carried out sometimes, remains under the state on partition and only cutting film peeled off sometimes at die bonding film.
The present invention foundes in view of foregoing problems, and the dicing/die bonding film with partition that provides dicing/die bonding film easily to peel off from partition is provided its object.
Present inventor is studied in order to solve foregoing problems, found that, by adopting following formation, can solve foregoing problems, thereby complete the present invention.
That is, the present invention relates to a kind of dicing/die bonding film with partition, it obtains with this sequential cascade by partition, peripheral part in the time overlooking being had to the die bonding film that stretches out sheet and the cutting film that protrude laterally.
In this dicing/die bonding film (below also referred to as " with the film of partition ") with partition, the peripheral part of die bonding film in the time overlooking have laterally protrude stretch out sheet (below sometimes referred to as " stretching out sheet "), therefore in the time that a side of stretching out sheet from being formed with is peeled off, this stretches out sheet becomes the starting point of peeling off, and result can easily be carried out dicing/die bonding film peeling off from partition.On the other hand, in the situation that die bonding film does not have the sheet of stretching out, the region of peeling off starting point as die bonding film is the state that more approaches straight line, is peeling off the stress that initial stage die bonding film is subject to from partition (will be by the die bonding film stress toward partition side tractive.Below also referred to as " tractive stress ") become large, produce sometimes the undesirable condition of peeling off in the past.
In this film with partition, stretch out sheet described in preferably and have the leading section of taper.Thus, stretch out the leading section of sheet and the contact area of partition diminishes, can reduce the tractive stress from partition, can more easily peel off dicing/die bonding film.
In this film with partition, described in stretch out sheet and preferably have the leading section of V-arrangement.By the leading section that stretches out sheet is set as to V-arrangement, the tractive stress from partition can be in the mechanical strength that keeps stretching out sheet, reduced, and the easy structure of leading section can be obtained forming with straight line, therefore, the formation of stretching out sheet becomes easy.
In this film with partition, more than the interior angle of the leading section of described V-arrangement is preferably 30 ° and below 90 °.Thus, can further reduce the tractive stress from partition, can make dicing/die bonding film peeling off more well from partition carry out.
In this film with partition, stretch out the stretching out in the vertical direction of direction of sheet with described, described in stretch out the root of sheet the minimum diameter distance maximum gauge distance of stretching out the pars intermedia between root and the leading section of sheet described in being preferably less than.Make the shape of the root constriction of stretching out sheet by formation like this, remain in partition side even if stretch out the leading section (and pars intermedia) of sheet while peeling off, peel off cross the stress peeled off when root carries out (from stretching out the leading section of sheet, the tractive stress that is subject to from partition of pars intermedia with cross root region (, die bonding film stretch out the region beyond sheet.Below, also this region is called to " base portion " of die bonding film) the stress sum that is raised) thus also can concentrate on root cuts off root.As a result, can, stretching out near the new starting point of peeling off that base portion is set the place of incision of sheet, can suppress as much as possible the generation of the undesirable condition of peeling off.
In this film with partition, the minimum diameter distance of described root is preferably below 1mm.Thus, the cut-out of root when crossing root and carrying out can be promoted to peel off, new the peeling off starting from base portion can be easily promoted.
In this film with partition, described partition can be the partition of long size.By on the partition in long size with the multiple dicing/die bonding films of arranged spaced of regulation, can work continuously, thereby can improve the manufacture efficiency of semiconductor device.
In this film with partition, described in stretch out sheet preferably along the length direction configuration of described long size partition.When dicing/die bonding film being peeled off continuously from the dicing/die bonding film with long size partition of emitting, if stretch out the length direction configuration of sheet along long size partition, direction of delaminate is parallel with the length direction of long size partition, therefore can carry out efficiently continuous peeling off.
In this film with partition, on described die bonding film, a part for the periphery of the described die bonding film in the time overlooking be formed with to clip in this periphery described in stretch out two of sheet and stretch out two points in this periphery of starting point as stretching out starting point and stretching out starting point as the taper extension that stretches out forward terminal using described two of stretching out sheet, described in connecting respectively, stretching out two of sheet stretches out two line segments that starting point and described extension two stretch out starting point and is preferably placed at by described two of stretching out sheet and stretches out any one of starting point and two inner sides of stretching out the circular arc of these three points of starting point of described extension.In which, can be described as relatively little two sections of formations of stretching out sheet that the peripheral shape of die bonding film itself is formed as to the relatively large extension of taper and links with the fore-end of this extension.By adopting such formation, by dicing/die bonding film when partition is peeled off, even if stretching out peeling off of sheet does not carry out, peeling off while crossing the root (or stretching out starting point) that stretches out sheet, also can, having reduced from the extension of the tractive stress of partition and cause and peel off by being formed as taper, can suppress as much as possible the generation of the unforeseeable undesirable condition of peeling off.
In this film with partition, the starting point of stretching out that connects described extension is preferably straight line with described two line segments that stretch out forward terminal (, stretching out the starting point of stretching out of sheet).Thus, extension can be easily formed and the tractive stress from partition can be effectively reduced.
In this film with partition, more than described two line segment angulations are preferably 120 ° and below 175 °.By this formation, can effectively reduce the tractive stress from partition, can guarantee fully in die bonding film for pasting the effective area of semiconductor wafer simultaneously.
Described cutting film has base material and is layered in the adhesive phase on this base material, the stacked die bonding film of stating to some extent on the described adhesive phase of described cutting film.
Accompanying drawing explanation
Figure 1A is the schematic sectional view that represents the dicing/die bonding film with partition of an embodiment of the invention.
Figure 1B is the perspective plan view that represents the die bonding film of the dicing/die bonding film with partition shown in Figure 1A.
Fig. 2 is the part amplification plan view that stretches out sheet that represents the die bonding film of an embodiment of the invention.
Fig. 3 is the schematic sectional view that represents an operation of the manufacturing process of the semiconductor device of the dicing/die bonding film with partition that uses an embodiment of the invention.
Fig. 4 is the schematic sectional view that represents the example of the die bonding film mounting semiconductor chip by the dicing/die bonding film with partition shown in Figure 1A.
Fig. 5 A is the amplification plan view that represents a part for the die bonding film of another embodiment of the present invention.
Fig. 5 B is the perspective plan view that represents the die bonding film of the dicing/die bonding film with partition of another embodiment of the present invention.
Fig. 6 A is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 B is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 C is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 D is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 E is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 F is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 G is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 H is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 I is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 J is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 K is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 L is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Fig. 6 M is the part amplification plan view that stretches out sheet that represents the die bonding film of another embodiment of the present invention.
Label declaration
1 base material
2 adhesive phases
3 die bonding films
3a, 33a～33l stretch out sheet
3A extension
4 semiconductor wafers
5 semiconductor chips
6 adherends
7 bonding wires
8 sealing resins
10 dicing/die bonding films with partition
11 cutting films
12 dicing/die bonding films
14 partitions
Embodiment
< the first execution mode >
[with the dicing/die bonding film of partition]
Below the dicing/die bonding film with partition of the first execution mode as an embodiment of the invention is described.Figure 1A is the schematic sectional view that represents the dicing/die bonding film with partition of an embodiment of the invention, and Figure 1B is its perspective plan view.Fig. 2 is the part amplification plan view that stretches out sheet that represents the die bonding film shown in Figure 1B.
As shown in FIG. 1A and 1B, the dicing/die bonding film 10 with partition has and on the partition 14 of long size, stacks gradually the formation of overlooking as circular die bonding film 3 and cutting film 11.Utilize these die bonding films 3 and cutting film 11 to form dicing/die bonding film 12.In addition, in Figure 1B, for convenience of explanation, not shown cutting film 11, only shows the partition 14 of long size and the die bonding film 3 being laminated thereon.Cutting film 11 consists of stacked adhesive phase 2 on base material 1, is laminated with diameter and is less than the die bonding film 3 that cuts film 11 on adhesive phase 2.Cutting film 11 is layered on partition 14 in adhesive phase 2 mode relative with die bonding film 3.In addition, the part of the periphery that exceeds die bonding film 3 of cutting film 11 can not contact with partition 14 as shown in Figure 1A, also can contact with partition 14.
Although it is not shown,, in the dicing/die bonding film with partition 10 of present embodiment, on long size partition 14, dispose multiple dicing/die bonding films 12 with predetermined distance.Thus, can carry out continuously dicing/die bonding film 12 from partition 14 peel off with and subsequent with the laminating of semiconductor wafer, can improve the manufacture efficiency of semiconductor device.Consider from the viewpoint that can emit continuously, the dicing/die bonding film with partition 10 of long size can be the coiling body that is wound as drum.In addition, the dicing/die bonding film with partition can be for following form: multiple die bonding films are configured in predetermined distance on the partition of long size, and the cutting film of long size is stacked to cover the mode of these multiple die bonding films.
(partition)
Long size partition 14, has as the function etc. of protecting the protective material of die bonding film 3 before supplying with practical application.In addition, grow size partition 14 and can also be used as support base material when die bonding film 3 is transferred on adhesive phase 2.Long size partition 14 is stripped from the time workpiece being pasted on die bonding film 3.As the material of long size partition 14, can enumerate PETG (PET), polyethylene, polypropylene and utilize plastic film or the paper etc. after the remover coating surface such as fluorine-containing type remover, chain alkyl esters of acrylic acid remover.In addition, partition can be long size objects as shown in the embodiment, can be also the shape that is similarly circular with cutting film 11 in the time overlooking and has the size of same degree.
The thickness of long size partition 14 is not particularly limited, preferably 25～100 μ m, more preferably 25～75 μ m, further preferred 35～60 μ m.By being set as above-mentioned scope, can keep the intensity as protective material, and can easily make the coiling body of the dicing/die bonding film 10 with partition.
(die bonding film)
As shown in Figure 1B, in the peripheral part of die bonding film 3 in the time overlooking, have laterally protrude stretch out sheet 3a.In addition, cutting film 11 comprises this to stretch out sheet 3a stacked in the mode of interior whole die bonding film to cover.In addition, die bonding film 3a can have as shown in Figure 1B one and stretch out sheet 3a, also can have plural multiple sheet 3a that stretches out.
(stretching out sheet)
As shown in Figure 2, stretch out sheet 3a and stretch out starting point E with two periphery a, E arise along stretching out the mode of stretching out projectedly in direction Z-direction outside and form.Stretch out starting point E a, E ait is the point that starts laterally to stretch out from the periphery of the base portion of die bonding film 3.What clip die bonding film 3 stretches out starting point E a, E a, the part of a side contrary with stretching out sheet 3a becomes the base portion of die bonding film 3.Stretch out sheet 3a and overlook as almost diamond, a part with the leading section of acute angle is passed stretches out starting point E a, E athe shape of line segment cutting, particularly, there is following shape: from comprising along the root that stretches out the part that direction Z erects from the circular circumference of die bonding film, through the pars intermedia along expanding perpendicular to the direction of stretching out direction Z, arrive taper and turn to the leading section of V-arrangement.By the leading section that stretches out sheet 3a is set as to V-arrangement, can keeps stretching out the mechanical strength of sheet 3a and can reduce the tractive stress from partition 14.In addition, can become the easy structure that forms leading section with straight line, therefore can easily form and stretch out sheet.
The interior angle of the leading section of described V-arrangement is not particularly limited, but the consideration of the viewpoint of the easiness of peeling off from partition 14 from dicing/die bonding film 12, and its upper limit is preferably below 90 °, more preferably below 75 °.In addition, the lower limit of above-mentioned interior angle is preferably more than 30 °, more preferably more than 45 °.
With stretch out sheet 3a stretch out the above minimum diameter of root that stretches out sheet of direction that direction Z is vertical apart from d min(be present embodiment stretch out starting point E a, E abetween distance) be preferably less than the pars intermedia between root and the leading section that stretches out sheet 3a maximum gauge apart from d max(, the distance between the summit of the leading section at the obtuse angle of present embodiment).By being formed as making the shape of root constriction compared with pars intermedia of stretching out sheet 3a, remain in partition 14 sides even if stretch out the leading section (and pars intermedia) of sheet 3a while peeling off, peel off and cross the stress of peeling off when root carries out and also can concentrate on root, thereby can promote the cut-out of root.As a result, the new starting point of peeling off of die bonding film 3 can be set near the place of incision that stretches out sheet 3a, can suppress as much as possible the generation of the undesirable condition of peeling off.
The viewpoint consideration of the cut-out of the root while peeling off from promotion, the minimum diameter of root is apart from d minbe preferably below 1mm.Consider from the viewpoint of the mechanical strength of root, minimum diameter is apart from d minlower limit be preferably 0.5mm more than.
The minimum diameter of root is apart from d minwith respect to the maximum gauge of pars intermedia apart from d maxratio (d min/ d max), the viewpoint of the balance of the cut-out from the mechanical strength of guaranteeing to stretch out sheet when promoting the peeling off of root is considered, preferably below 0.7, more preferably below 0.5.
For the overhang h that stretches out sheet 3a and stretch out from base portion, work and be not particularly limited, preferably 1～10mm, more preferably 3～5mm as long as stretch out the starting point of peeling off that sheet 3a can be used as dicing/die bonding film 12.In addition, overhang h is as by stretching out starting point E a, E astraight line and obtain by the distance perpendicular to stretching out between the straight line of direction Z foremost of stretching out sheet 3a.By stretching out starting point E a, E astraight line be not orthogonal to while stretching out direction Z, as stretching out starting point E with straight line a, E athe distance perpendicular to stretching out between the straight line of direction Z of the point of bisection of the line segment connecting and the forward terminal by stretching out sheet 3a is obtained.
Stretch out the overhang h that the pars intermedia of sheet 3a stretches out from base portion midbe not particularly limited preferably 0.5～10mm, more preferably 0.5～5mm.In addition, the overhang h of pars intermedia midas by stretching out starting point E a, E astraight line with by providing the maximum gauge of the pars intermedia that stretches out sheet 3a apart from d maxthe straight line of 2 between distance obtain.By stretching out starting point E a, E astraight line or by providing the maximum gauge of the pars intermedia that stretches out sheet 3a apart from d maxthe straight line of 2 be not orthogonal to while stretching out direction Z, as stretching out starting point E with straight line a, E athe point of bisection of the line segment connecting provides the maximum gauge of the pars intermedia that stretches out sheet 3a apart from d with being connected with straight line maxthe point of bisection of the line segment of 2 between distance obtain.
As shown in Figure 1B, stretching out sheet 3a preferably configures along the length direction X of long size partition 14.In the time that dicing/die bonding film 12 is peeled off continuously from the film with partition 10 of the long size of emitting, if stretch out the length direction X configuration of sheet 3a along long size partition 14, direction of delaminate is parallel with the length direction X of long size partition 14, therefore, can carry out efficiently continuous peeling off.
In addition, while stretching out sheet along the length direction X configuration of long size partition 14, preferably at the both ends of the die bonding film 3 of the length direction X along long size partition 14, (right-hand member that is provided with the not setting of stretching out the left end of sheet 3a, a side contrary with it and stretches out sheet of illustrated die bonding film 3 in Figure 1B) is provided with and stretches out sheet.Thus, especially, be formed as coiling body long size the dicing/die bonding film with partition 10 emit orientation independent, can carry out peeling off continuously of dicing/die bonding film 12.
(constituent material of die bonding film etc.)
The layer structure of die bonding film 3, as shown in the embodiment, can enumerate the sandwich construction that only comprises the structure of individual layer adhesive layer, is formed with adhesive layer in the one or two sides of core.As above-mentioned core, can enumerate film (such as polyimide film, polyester film, pet film, PEN film, polycarbonate film etc.), by resin substrates, silicon substrate or glass substrate etc. after the strengthening of glass fibre or plastics non-woven fibre.
As forming the adhesive compound of die bonding film 3, can enumerate composition thermoplastic resin and thermosetting resin being used in combination and obtain.
As above-mentioned thermosetting resin, can enumerate phenolic resins, amino resins, unsaturated polyester resin, epoxy resin, polyurethane resin, polyorganosiloxane resin or thermoset polyimide resin etc.These resins may be used singly or two or more in combination.Particularly preferably corrode the poor epoxy resin of ionic impurity of semiconductor element etc.In addition, as the curing agent of epoxy resin, preferably phenolic resins.
As above-mentioned epoxy resin, as long as the epoxy resin using usually used as adhesive compound is not particularly limited, for example can use: the epoxy resin such as bifunctional epoxy resin or polyfunctional epoxy resin or hydantoins type, triglycidyl isocyanurate type or glycidic amine type such as bisphenol A-type, Bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol phenolic varnish type, orthoresol phenolic varnish type, three (hydroxyphenyl) methane type, four (hydroxyphenyl) ethane type.These epoxy resin may be used singly or two or more in combination.In these epoxy resin, particularly preferably phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, three (hydroxyphenyl) methane type epoxy resin or four (hydroxyphenyl) ethane type epoxy resin.This be because: these epoxy resin are good with the reactivity as the phenolic resins of curing agent, and thermal endurance etc. are good.
Above-mentioned phenolic resins works as the curing agent of above-mentioned epoxy resin, for example can enumerate: the polycarboxylated styrenes such as the phenolic varnish type phenolic resins such as phenol novolac resin, phenol aralkyl resin, cresols novolac resin, tert-butyl phenol novolac resin, phenol biphenyl resin, nonyl phenol novolac resin, resol type phenolic resins, poly(4-hydroxystyrene) etc.These phenolic resins may be used singly or two or more in combination.In these phenolic resins, particularly preferably phenol novolac resin, phenol aralkyl resin etc.This is because can improve the connection reliability of semiconductor device.
For the mixing ratio of above-mentioned epoxy resin and phenolic resins, preference coordinates take the hydroxyl in phenolic resins as the mode of 0.5～2.0 equivalent as epoxy radicals 1 equivalent with respect in above-mentioned epoxy resin composition.More preferably 0.8～1.2 equivalent., this be because: if both mixing ratios beyond above-mentioned scope, can not be carried out sufficient curing reaction, the easy variation of characteristic of epoxy resin cured product.
As above-mentioned thermoplastic resin, can enumerate saturated polyester resin, polyamide-imide resin or the fluorine resins etc. such as natural rubber, butyl rubber, isoprene rubber, neoprene, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, nylon 6 or nylon 6,6 polyamides such as grade, phenoxy resin, acrylic resin, PET or PBT.These thermoplastic resins may be used singly or two or more in combination.In these thermoplastic resins, particularly preferably ionic impurity is few, thermal endurance is high, can guarantee the acrylic resin of the reliability of semiconductor element.
As aforesaid propylene acid resin, be not particularly limited, can enumerate using one or more the acrylate with carbon number below 30, particularly the straight or branched alkyl of carbon number 4～18 or methacrylate as polymer (acrylic copolymer) of composition etc.As abovementioned alkyl, for example can enumerate: methyl, ethyl, propyl group, isopropyl, normal-butyl, the tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or eicosyl etc.
In addition, as other monomer that forms above-mentioned polymer, be not particularly limited, for example can enumerate: glycidyl acrylate, glycidyl methacrylate etc. are containing glycidyl monomer, acrylic acid, methacrylic acid, acrylic acid carboxyl ethyl ester, acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, the carboxyl group-containing monomer such as fumaric acid or crotonic acid, the anhydride monomers such as maleic anhydride or itaconic anhydride, (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-4-hydroxyl butyl ester, the own ester of (methyl) acrylic acid-6-hydroxyl, (methyl) acrylic acid-8-hydroxyl monooctyl ester, (methyl) acrylic acid-10-hydroxyl ester in the last of the ten Heavenly stems, the hydroxyl monomers such as (methyl) acrylic acid-12-hydroxyl lauryl or acrylic acid (4-methylol cyclohexyl) methyl esters, styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acrylamido propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester or (methyl) acryloxy naphthalene sulfonic acids etc. are containing sulfonic group monomer, the phosphorous acidic group monomers such as acryloyl phosphoric acid-2-hydroxy methacrylate, styrene monomer, or acrylonitrile etc.
In addition, in die bonding film 3, can suitably coordinate filler according to its purposes.The cooperation of filler can be given conductivity or be improved thermal conductivity, adjustable elastic modulus etc.As above-mentioned filler, can enumerate inorganic filler and organic filler, from improving operability, put forward high thermal conductivity, regulate melt viscosity, the viewpoint of giving the characteristics such as thixotropy considers, preferably inorganic filler.As above-mentioned inorganic filler, be not particularly limited, for example can enumerate: aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesium oxide, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, amorphous silica etc.These fillers may be used singly or two or more in combination.Consider preferential oxidation aluminium, aluminium nitride, boron nitride, crystalline silica, amorphous silica from the viewpoint of putting forward high thermal conductivity.In addition, consider from the viewpoint that the balance of above-mentioned each characteristic is good, preferably crystalline silica or amorphous silica.In addition, in order to give conductivity, to put forward high thermal conductivity etc., also can use conductive material (conductive filler) as inorganic filler.As conductive filler, can enumerate and make silver, aluminium, gold, copper, nickel, conductivity alloy etc. be formed as metal oxide, amorphous carbon black, the graphite etc. such as spherical, needle-like, laminar metal powder, aluminium oxide.The average grain diameter of above-mentioned filler is 0.1～80 μ m.In addition, the average grain diameter of filler is for example by luminosity formula particle size distribution meter (HORIBA system, device name: the value of LA-910) obtaining.
More than the use level of above-mentioned filler is preferably 5 weight portions with respect to total 100 weight portions of thermosetting resin composition, thermoplastic resin composition and filler, more preferably more than 10 weight portions and below 95 weight portions, further preferably more than 20 weight portions and below 90 weight portions.
In addition, in die bonding film 3, except above-mentioned filler, can also suitably coordinate as required other additive.As other additive, for example can enumerate: fire retardant, silane coupler or ion trap agent etc.As above-mentioned fire retardant, for example can enumerate: antimonous oxide, antimony pentoxide, brominated epoxy resin etc.These fire retardants may be used singly or two or more in combination.As above-mentioned silane coupler, for example can enumerate: β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxy propyl group methyldiethoxysilane etc.These compounds may be used singly or two or more in combination.As above-mentioned ion trap agent, for example can enumerate: hydrotalcite, bismuth hydroxide etc.These ion trap agent may be used singly or two or more in combination.
The thickness (being gross thickness in the situation of duplexer) of die bonding film 3 is not particularly limited, for example, can select from the scope of 1～200 μ m preferably 5～100 μ m, more preferably 10～80 μ m.
(base material)
Above-mentioned base material 1 preferably has the base material of ultraviolet (uv) transmission, and it is as the intensity parent of cutting film 11.For example can enumerate: low density polyethylene (LDPE), linear polyethylene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, the polyolefin such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) copolymer, ethylene-butene copolymer, ethene-hexene copolymer, polyurethane, PETG, the polyester such as PEN, Merlon, polyimides, polyether-ether-ketone, polyimides, Polyetherimide, polyamide, Wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamides (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulosic resin, polyorganosiloxane resin, metal (paper tinsel), paper etc.
In addition, as the material of base material 1, can enumerate the polymer such as the cross-linking agent of aforementioned resin.Above-mentioned plastic film can not stretch and use, and also can carry out as required using after single shaft or biaxial stretch-formed processing.Utilize the resin sheet of having given heat-shrinkable by stretch processing etc., after cutting, make this base material 1 thermal contraction, can reduce thus the gluing area of adhesive phase 2 and die bonding film 3, thereby can easily reclaim semiconductor chip (semiconductor element).
In addition, in order to improve and adhesiveness, the retentivity etc. of adjoining course, usual surface treatment can be implemented in the surface of base material 1, chemistry or the physical treatments such as for example, chromic acid processing, ozone exposure, fire exposure, high-voltage electric shock exposure, ionization radial line processing, utilize the coating processing of silane coupling agent (for example adhesion substance described later).Above-mentioned base material 1 is the of the same race or different types of material of choice for use suitably, also can use as required the material after several materials blend.
The thickness of base material 1 is not particularly limited, and can suitably determine, is generally approximately 5 μ m～approximately 200 μ m.
(adhesive phase)
The adhesive using in formation as adhesive phase 2, is not particularly limited, and for example, can use the pressure-sensitive adhesive that acrylic adhesives, rubber adhesive etc. are general.As above-mentioned pressure-sensitive adhesive, the viewpoint of the clean washing performance that utilizes the organic solvent such as ultra-pure water or alcohol of the electronic unit polluting from the taboo such as semiconductor wafer or glass etc. is considered, the preferably acrylic adhesives take acrylic polymer as base polymer.
As aforesaid propylene acids polymer, for example can enumerate: (for example use (methyl) alkyl acrylate, methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-Octyl Nitrite, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, hendecane ester, dodecane ester, tridecane ester, tetradecane ester, hexadecane ester, octadecane ester, the carbon number 1～30 of the alkyl such as eicosane ester, particularly straight or branched Arrcostab of carbon number 4～18 etc.) and (methyl) acrylic acid cycloalkyl ester is (for example, ring pentyl ester, cyclohexyl etc.) one or more acrylic polymers as monomer component etc.In addition, (methyl) acrylate refers to acrylate and/or methacrylate, and (methyl) of the present invention all represents identical implication.
In order to improve cohesiveness, thermal endurance etc., aforesaid propylene acids polymer can contain as required with can be with unit corresponding to other monomer component of above-mentioned (methyl) alkyl acrylate or the copolymerization of (methyl) acrylic acid cycloalkyl ester.As such monomer component, for example can enumerate: the carboxyl group-containing monomers such as acrylic acid, methacrylic acid, (methyl) acrylic acid carboxyl ethyl ester, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid, crotonic acid; The anhydride monomers such as maleic anhydride, itaconic anhydride; The hydroxyl monomers such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-4-hydroxyl butyl ester, the own ester of (methyl) acrylic acid-6-hydroxyl, (methyl) acrylic acid-8-hydroxyl monooctyl ester, (methyl) acrylic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid-12-hydroxyl lauryl, (methyl) acrylic acid (4-methylol cyclohexyl) methyl esters; Styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acrylamido propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester, (methyl) acryloxy naphthalene sulfonic acids etc. are containing sulfonic group monomer; The phosphorous acidic group monomers such as acryloyl phosphoric acid-2-hydroxy methacrylate; Acrylamide, acrylonitrile etc.These copolymerisable monomer compositions can use one or more.The use amount of these copolymerisable monomers is preferably below 40 % by weight of whole monomer components.
In addition, in order to be cross-linked, aforesaid propylene acids polymer also can contain polyfunctional monomer etc. as required as comonomer composition.As such polyfunctional monomer, for example can enumerate: hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These polyfunctional monomers also can use one or more.Consider from viewpoints such as adhesion characteristics, the use amount of polyfunctional monomer is preferably below 30 % by weight of whole monomer components.
Aforesaid propylene acids polymer can be by obtaining the polymerization of mixtures of single monomer or two or more monomers.Polymerization can be undertaken by any one modes such as polymerisation in solution, emulsion polymerisation, polymerisation in bulk, suspension polymerisations.From preventing that the viewpoints such as pollution to clean adherend from considering, preferably the content of low molecular weight substance is few.Consider from this viewpoint, the number-average molecular weight of acrylic polymer is preferably approximately more than 300,000, and more preferably from about 400,000～approximately 3,000,000.
In addition, in order to improve the number-average molecular weight of acrylic polymer as base polymer etc., in above-mentioned adhesive, also can suitably adopt outside crosslinking agent.As the concrete means of outside cross-linking method, can enumerate: add the so-called crosslinking agents such as polyisocyanate compound, epoxy compounds, aziridine cpd, melamine class crosslinking agent and make the method for its reaction.In the situation that using outside crosslinking agent, its use amount is according to suitably determining with the balance of base polymer that should be crosslinked and as the use of adhesive.Generally speaking, with respect to above-mentioned base polymer 100 weight portions, preferably coordinate below 5 weight portions, more preferably coordinate 0.1～5 weight portion.In addition, as required, in adhesive, except aforementioned composition, can also use the additive such as known various tackifier, age resister in the past.
Adhesive phase 2 can be formed by radiation curable adhesive.Radiation curable adhesive increases the degree of cross linking by irradiation ultraviolet radiation israds, can easily reduce its bonding force.Make radiation curable adhesive phase 2 solidify, solidify thus and adhesive phase 2 that bonding force declines has with the interface of die bonding film 3 character of easily peeling off in the time picking up by irradiation with radiation.
Above-mentioned radiation curable adhesive can use without particular limitation to be had carbon-to-carbon double bond israds curability functional group and demonstrates fusible radiation curable adhesive.As radiation curable adhesive, for example can illustrate: in the general pressure-sensitive adhesive such as aforementioned acrylic adhesives, rubber adhesive, be combined with the monomer component of radiation curing or the addition type radiation curable adhesive of oligomer composition.
As the radiation curing monomer component coordinating, for example can enumerate: oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, radiation curing oligomers composition can be enumerated the various oligomer such as carbamates, polyethers, polyesters, polycarbonate-based, polybutadiene, and its molecular weight is suitable in approximately 100～approximately 30000 scope.The use level of radiation curing monomer component or oligomer composition can suitably be determined according to the kind of above-mentioned adhesive phase the amount of the bonding force that can reduce adhesive phase.Generally speaking, with respect to base polymer 100 weight portions such as acrylic polymer that form adhesive, for example, be approximately 5 weight portions～approximately 500 weight portions, preferred approximately 40 weight portions～approximately 150 weight portion.
In addition, as radiation curable adhesive, except the addition type radiation curable adhesive illustrating above, can also enumerate and use in polymer lateral chain or main chain or interior at type radiation curable adhesive as base polymer of polymer that main chain end has a carbon-to-carbon double bond.Inherent type radiation curable adhesive is without containing or do not contain in a large number as the oligomer composition of low molecular composition etc., therefore, oligomer composition etc. can not passed in time and move in adhesive, can form the adhesive phase of stable layer structure, therefore preferred.
The above-mentioned base polymer with carbon-to-carbon double bond can use without particular limitation to be had carbon-to-carbon double bond and has fusible polymer.As such base polymer, the preferably polymer using acrylic polymer as basic framework.As the basic framework of acrylic polymer, can enumerate the acrylic polymer illustrating above.
The method of introducing carbon-to-carbon double bond in aforesaid propylene acids polymer is not particularly limited, and can adopt the whole bag of tricks, still, by carbon-to-carbon double bond introduce polymer lateral chain in MOLECULE DESIGN than being easier to.For example can enumerate following method: in advance by the monomer copolymerization with functional group to after in acrylic polymer, make to have and can carry out condensation or addition reaction in the case of keeping the radiation curing of carbon-to-carbon double bond with the compound of the functional group of this functional group reactions and carbon-to-carbon double bond.
As the combination example of these functional groups, for example can enumerate: carboxyl and epoxy radicals, carboxyl and '-aziridino, hydroxyl and NCO etc.In the combination of these functional groups, the easiness of following the trail of from reaction is considered, the preferably combination of hydroxyl and NCO.In addition, if generate the combination of the above-mentioned acrylic polymer with carbon-to-carbon double bond by the combination of these functional groups, functional group can be in any side of acrylic polymer and above-claimed cpd, in above-mentioned preferred compositions, preferably acrylic polymer has hydroxyl, above-claimed cpd and has the situation of NCO.Now, as the isocyanate compound with carbon-to-carbon double bond, for example can enumerate: methacryl isocyanates, 2-methylacryoyloxyethyl isocyanates, isopropenyl-α, alpha-alpha-dimethyl dibenzoyl isocyanates etc.In addition, as acrylic polymer, can use copolymerization such as the ether compounds of illustrative hydroxyl monomer or 2-hydroxyethyl vinyl ethers, 4-hydroxybutyl vinyl ethers, diethylene glycol mono vinyl ether above and the polymer obtaining.
Above-mentioned inherent type radiation curable adhesive can use separately the above-mentioned base polymer (particularly acrylic polymer) with carbon-to-carbon double bond, also can be not make the degree of characteristic variation coordinate above-mentioned radiation curing monomer component or oligomer composition.Radiation curing oligomers compositions etc. conventionally in the scope of 30 weight portions, are preferably the scope of 0～10 weight portion with respect to base polymer 100 weight portions.
In above-mentioned radiation curable adhesive, utilizing ultraviolet ray etc. to contain Photoepolymerizationinitiater initiater curing in the situation that.As Photoepolymerizationinitiater initiater, for example can enumerate: 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, the α-one alcohol compounds such as α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxy-cyclohexyl phenyl ketone; Methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenone, 2-methyl isophthalic acid-[4-(methyl mercapto) phenyl]-acetophenone compounds such as 2-morpholino propane-1-ketone; The benzoin ether compounds such as benzoin ethyl ether, benzoin iso-propylether, anisoin methyl ether; The ketal compounds such as dibenzoyl dimethyl ketal; The aromatic sulfonyl compounds such as 2-naphthalene sulfonyl chloride; 1-phenyl-1, the photolytic activity oxime compounds such as 2-propane diketone-2-(O-ethoxy carbonyl) oxime; Benzophenone, benzoylbenzoic acid, 3, the benzophenone compounds such as 3 '-dimethyl-4-methoxy benzophenone; Thioxanthones, CTX, 2-methyl thioxanthones, 2,4-dimethyl thioxanthones, isopropyl thioxanthone, 2,4-bis-clopenthixal ketones, 2,4-diethyl thioxanthone, 2, the thioxanthones compounds such as 4-diisopropyl thioxanthones; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate etc.The use level of Photoepolymerizationinitiater initiater is for example approximately 0.05 weight portion～approximately 20 weight portions with respect to base polymer 100 weight portions such as acrylic polymer that form adhesive.
In addition, as radiation curable adhesive, for example can enumerate: disclosed in Japanese kokai publication sho 60-196956 communique, contain have more than 2 unsaturated bond addition polymerization compound, have the optical polymerism compounds such as the alkoxy silane of epoxy radicals and carbonyls, organosulfur compound, peroxide, amine,
Figure BDA0000399702200000191
rubber adhesive or the acrylic adhesives etc. of the Photoepolymerizationinitiater initiaters such as salt compounds.
In addition, the in the situation that of producing curing obstacle because of oxygen in the time of irradiation with radiation, preferably utilize any means to intercept oxygen (air) to the surface of radiation curable adhesive phase 2.For example can enumerate: with partition by the method for the surface coverage of above-mentioned adhesive phase 2 or carry out method of the irradiation of ultraviolet israds etc. in nitrogen atmosphere.
The thickness of adhesive phase 2 is not particularly limited, and from realize the viewpoint such as the fixing maintenance consideration of the damaged and adhesive layer that prevents chip cutting face simultaneously, is preferably approximately 1 μ m～approximately 50 μ m.Preferably 2 μ m～30 μ m, more preferably 5 μ m～25 μ m.
[manufacture method of the dicing/die bonding film with partition]
The dicing/die bonding film with partition 10 of present embodiment for example can be made by the following method.
First, base material 1 can be by existing known film build method film forming.As this film build method, for example can illustrate: be rolled into blowing extrusion molding in the tape casting, the enclosed system in embrane method, organic solvent, T shape die head extrusion molding, coetrusion, dry lamination method etc.Base material 1 is being carried out to painted in the situation that, add above-mentioned colorant.
Then, on base material 1, coating adhesive composition solution forms film, then this dried coating film (carrying out as required heat cross-linking) is formed to adhesive phase 2 under rated condition.As coating process, be not particularly limited, for example can enumerate: roller coat, silk screen coating, intaglio plate coating etc.In addition, as drying condition, can be for example carrying out in 80～150 ℃ of baking temperatures, the scope of 0.5～5 minute drying time.In addition, also can on partition, after forming film, under above-mentioned drying condition, dried coating film be formed to adhesive phase 2 by coating adhesive composition.Then, adhesive phase 2 is fitted on base material 1 together with partition.Thus, make cutting film 11.
Die bonding film 3 is for example made with following method.
First, make the adhesive compound solution as the formation material of die bonding film 3.In this adhesive compound solution, as previously mentioned, be combined with above-mentioned adhesive compound, filler, other various additives etc.
Then, adhesive compound solution coat is become to specific thickness to base material, thereby form film, then that this film is dry under rated condition, form die bonding film precursor.As coating process, be not particularly limited, for example can enumerate: roller coat, silk screen coating, intaglio plate coating etc.In addition, as drying condition, can be for example carrying out in 70～160 ℃ of baking temperatures, the scope of 1～5 minute drying time.In addition, also can on partition, form after film by coating binder composition solution, under aforementioned drying condition, dried coating film be formed to die bonding film precursor.Then, die bonding film precursor is fitted on base material partition together with partition.
Then, obtained die bonding film precursor is carried out to cross cutting or cutting in the mode of the plan view shape that becomes regulation, make and there is the die bonding film 3 that stretches out sheet.
Then, from cutting film 11 and die bonding film 3, peel off respectively partition, take die bonding film 3 and adhesive phase 2 as the mode of binding face, both are fitted.Laminating for example can be undertaken by crimping.Now, laminating temperature is not particularly limited, and for example preferably 30～50 ℃, more preferably 35～45 ℃.In addition, line pressure is also not particularly limited, for example preferably 0.1～20kgf/cm, more preferably 1～10kgf/cm.
Finally, the base material partition on die bonding film 3 is peeled off, with partition laminating, obtained the dicing/die bonding film with partition 10 of present embodiment.In present embodiment, use long size partition 14 as partition, multiple dicing/die bonding films 12 are fitted on partition 14 with the interval of regulation.The film with partition 10 of so long size can be wound as to drum and use with the form of coiling body.
[manufacture method of semiconductor device]
Below, describe as an example of the situation that uses the dicing/die bonding film 10 with partition example with reference to Figure 1B, Fig. 3 and Fig. 4.Fig. 3 is the schematic sectional view that represents an operation of the manufacturing process of the semiconductor device of the dicing/die bonding film with partition that uses present embodiment, and Fig. 4 is the schematic sectional view representing by the example of the die bonding film mounting semiconductor chip in the dicing/die bonding film with partition shown in Figure 1A.
As shown in Figure 1B, the film 10 with partition is emitted continuously along emitting direction Y.Then, utilize known device for mounting wafer, dicing/die bonding film 12 is peeled off from long size partition 14, as shown in Figure 3, semiconductor wafer 4 is crimped onto on the dicing/die bonding film 12 after peeling off and (pastes brilliant operation).Peeling off a side of stretching out sheet 3a from being formed with of die bonding film 3 carries out.Thus, stretching out sheet 3a becomes and peels off starting point, dicing/die bonding film 12 easily can be peeled off.In addition, the length direction X-shaped of growing size partition 14 by edge becomes to stretch out sheet 3a, can make to peel off starting point and always be positioned at the front of emitting direction Y, therefore, peeling off of the dicing/die bonding film 12 that can start to emit in the constant position of growing on size partition 14, and can suppress the complex job for peeling off.
Paste brilliant operation carries out when the means of pressing such as utilizing crimping roller are pressed.The brilliant temperature of subsides when installation is not particularly limited, for example, preferably in the scope of 20～80 ℃.
Then, carry out the cutting of semiconductor wafer 4.Thus, semiconductor wafer 4 is cut into the size of regulation and panelization, manufactures semiconductor chip 5(with reference to figure 4).Cutting is for example carried out according to conventional methods from the circuit face side of semiconductor wafer 4.In addition, in this operation, for example can adopt be cut into die bonding film 3, be called cutting mode of entirely cutting etc.As the cutter sweep using in this operation, be not particularly limited, can use existing known cutter sweep.In addition, semiconductor wafer 4 is gluing fixing by dicing/die bonding film 12, therefore can suppress that chip is damaged or chip disperses and also can suppress the breakage of semiconductor wafer 4.
For by being peeled off by the gluing fixing semiconductor chip 5 of dicing/die bonding film 12, carry out picking up of semiconductor chip 5.As pick-up method, be not particularly limited, can adopt existing known the whole bag of tricks.For example can enumerate: each semiconductor chip 5 is pushed away and utilize method that pick device picks up the semiconductor chip being pushed away 5 etc. from cutting film 11 1 sides with pin.
At this, in the situation that adhesive phase 2 is ultraviolet hardening, pick up after to these adhesive phase 2 irradiation ultraviolet radiations and carry out.Thus, adhesive phase 2 declines to the bonding force of die bonding film 3, and peeling off of semiconductor chip 5 becomes easy.As a result, can in the situation that not damaging semiconductor chip 5, pick up.The condition such as exposure intensity, irradiation time when ultraviolet ray is irradiated is not particularly limited, and suitably sets as required.In addition, the light source using in irradiating as ultraviolet ray, can use high-pressure mercury lamp, microwave-excitation type lamp, chemical lamp etc.
The semiconductor chip 5 picking up is fixed to (chip join) on adherend 6 by die bonding film 3 is gluing.As adherend 6, can enumerate the semiconductor chip of lead frame, TAB film, substrate or making separately etc.Adherend 6 can be for example the deformation type adherend being easily out of shape, and can be also on-deformable non-deformation type adherend (semiconductor wafer etc.).
As above-mentioned substrate, can use existing known substrate.In addition, as above-mentioned lead frame, can use the die-attach area such as Cu lead frame, 42 alloy lead wire frames or comprise glass epoxide, BT(bismaleimides-triazine), organic substrate of polyimides etc.But present embodiment is not limited to this, also comprise the circuitry substrate that semiconductor element can be installed, be electrically connected rear use with semiconductor element.
In the situation that die bonding film 3 is heat curing-type, by being heating and curing, semiconductor chip 5 is adhesively fixed and is fixed on adherend 6, high-temperature capability is improved.Can 80～200 ℃, preferably 100～175 ℃, more preferably under the heating-up temperature of 100～140 ℃, carry out.In addition, can be 0.1～24 hour, preferably 0.1～3 hour in heating time, more preferably under the condition of 0.2～1 hour, carry out.In addition, can be in Reflow Soldering operation by the gluing semiconductor chip 5 upper object obtaining such as substrate that is fixed to by die bonding film 3.
The clipping viscous force of the die bonding film 3 after hot curing is preferably 0.2MPa to adherend 6, more preferably 0.2～10MPa.If more than the clipping viscous force of die bonding film 3 is at least 0.2MPa, can the gluing surface place generation detrusion with semiconductor chip 5 or adherend 6 at die bonding film 3 because of the ultrasonic vibration in this operation or heating in the time of wire bond operation.That is, ultrasonic vibration when semiconductor element can be because of wire bond is movable, thus, can prevent that the success rate of wire bond from declining.
In addition, in the manufacture method of the semiconductor device of present embodiment, can in the case of the hot curing operation of utilizing heat treated without die bonding film 3, carry out wire bond, then semiconductor chip 5 be sealed with sealing resin, and sealing resin is carried out to rear solidifying.Now, more than clipping viscous force when die bonding film 3 temporary transient set is preferably 0.2MPa to adherend 6, more preferably 0.2～10MPa.If more than clipping viscous force when die bonding film 3 temporary transient set is at least 0.2MPa, even if carry out wire bond operation without heating process in the situation that, can the gluing surface place generation detrusion with semiconductor chip 5 or adherend 6 at die bonding film 3 because of the ultrasonic vibration in this operation or heating yet.That is, ultrasonic vibration when semiconductor element can be because of wire bond is movable, thus, can prevent that the success rate of wire bond from declining.
Above-mentioned wire bond is the operation of utilizing bonding wire 7 that the front end of the portion of terminal of adherend 6 (inner lead) is electrically connected with the electrode pad (not shown) on semiconductor chip 5.As above-mentioned bonding wire 7, for example can use: gold thread, aluminum steel or copper cash etc.Temperature while carrying out wire bond 80～250 ℃, preferably in the scope of 80～220 ℃, carry out.In addition, carry out several seconds～a few minutes its heating time.Connection is can carry out to reach under the state within the scope of said temperature by being used in combination the crimping that hyperacoustic vibrational energy and applied pressure produce in heating.This operation can be carried out in the case of not carrying out the hot curing of die bonding film 3.
Above-mentioned sealing process is the operation of utilizing sealing resin 8 that semiconductor chip 5 is sealed.This operation is in order to protect the semiconductor chip 5 or the bonding wire 7 that are mounted on adherend 6 to carry out.This operation is by carrying out the resin forming of sealing use with mould.As sealing resin 8, for example, use epoxylite.Heating-up temperature while sealing for resin was conventionally carried out for 60～90 seconds, but be the invention is not restricted to this at 175 ℃, for example, also can at 165～185 ℃, solidify several minutes.Thus, in making sealing resin curing, pass through die bonding film 3 by semiconductor chip 5 and adherend 6 sets.That is, in the present invention, even in the situation that not carrying out rear curing process described later, in this operation, also can utilize die bonding film 3 to carry out set, thus the manufacturing time that can contribute to reduce worker ordinal number and shorten semiconductor device.
In above-mentioned rear curing process, make in aforementioned sealing process, to solidify not enough sealing resin 8 completely curing.Even at sealing process chips bonding film 3 not completely hot curing in the situation that, also can hot curing completely together with sealing resin 8 at this operation chips bonding film 3.Heating-up temperature in this operation is different because of the kind of sealing resin, and for example, in the scope of 165～185 ℃, be approximately 0.5 hour～approximately 8 hours heating time.
< the second execution mode >
The die bonding film of the first execution mode has the sheet that stretches out stretching out laterally from periphery.The die bonding film of the second execution mode has the extension of the taper of being formed as a region of the base portion of die bonding film, is connected with at its leading section the sheet that stretches out illustrating in the first execution mode.Below, which is described.
As shown in Figure 5A, in the film with partition of present embodiment, on die bonding film 23, above-mentioned two of stretching out sheet 3a that a part for the periphery of the die bonding film 23 in the time overlooking is formed with to clip in this periphery stretch out starting point E a, E athis periphery on two points as stretching out starting point E a, E aand stretch out starting point E with two of stretching out sheet 3a a, E aas the taper extension 3A that stretches out forward terminal.Respectively two of stretching out sheet 3a are stretched out to starting point E a, E astretch out starting point E with two of extension 3A a, E atwo line segment L that connect a, L atwo that are positioned at by stretching out sheet 3a are stretched out starting point E a, E aany one and two of extension 3A stretch out starting point E a, E athe circular arc C of these three points a, C ainner side.Therefore the relatively little sheet 3a that stretches out that, die bonding film 23 has relatively large taper extension 3A and links with the fore-end of this extension 3A.Thus, when partition is peeled off dicing/die bonding film, even if do not stretch out peeling off of sheet 3a, cross the root that stretches out sheet 3a and (or stretch out starting point E peeling off a, E a) time, also can, having reduced from the extension 3A of the tractive stress of partition and cause and peel off by being formed as taper, can suppress as much as possible the generation of the unforeseeable undesirable condition of peeling off.
Two that make to connect extension 3A are stretched out starting point E a, E a(that, stretches out sheet stretches out starting point E with stretching out forward terminal a, E a) two line segment L a, L abe positioned at above-mentioned circular arc C a, C ainner side (the center of gravity side of die bonding film) time, can be any one of straight line, curve or their combination.Article two, line segment L a, L aduring for curve, as long as be positioned at circular arc C a, C ainner side, can be the curve protruding laterally with respect to the center of gravity of die bonding film, can be also the curve protruding to the inside with respect to the center of gravity of die bonding film.Wherein, preferred two line segment L a, L afor straight line.Thus, extension 3A can be easily formed, and the tractive stress from partition can be effectively reduced.
Article two, line segment L a, L aduring for straight line, their angulation β be preferably 120 ° above and below 175 °, more preferably 130 ° above and below 160 °.By the internal angle beta of the leading section of extension 3A is set as to above-mentioned scope, can effectively reduce the tractive stress from partition, and can guarantee fully in die bonding film 23 for pasting semiconductor wafer 4(with reference to figure 3) effective area.
As shown in Figure 5 B, based on the reason same with the first execution mode, stretch out sheet 3a and extension 3A and preferably configure along the length direction X of long size partition 14.Especially, as shown in Figure 5 B, the both ends of preferably growing the die bonding film 23 of the length direction X of size partition 14 on edge are provided with stretches out sheet 3a, 3a ' and extension 3A, 3A '.
Other execution mode of < >
The variation of stretching out sheet of other execution mode of the present invention is as shown in Fig. 6 A to Fig. 6 M.Shown in Fig. 6 A to Fig. 6 M, stretch out sheet 33a～33m by die bonding film is had, can easily carry out dicing/die bonding film peeling off from partition.The architectural feature of stretching out sheet in the first execution mode also can be applicable equally for stretching out sheet 33a～33m.
Embodiment
Below, describe illustratively the preferred embodiments of the present invention in detail.But if the record of being not particularly limited property, material or the use level etc. of recording in this embodiment is defined in this by main idea of the present invention unintentionally.In addition, hereinafter, appearance " part " refers to weight portion.
[embodiment 1]
(making of die bonding film)
Make following (a)～(d) be dissolved or dispersed in methylethylketone, obtain the adhesive compound solution of concentration 25 % by weight.In addition, following (a)～umber (d) refers to the umber of solid constituent.
(a) 11 parts of epoxy resin (Nippon Kayaku K. K's system, EPPN-501HY)
(b) 14 parts, phenolic resins (bright and change into Co., Ltd.'s system, MEH7851M)
(c) 100 parts of acrylic rubbers (Na ガ セ ケ system テ ッ Network ス Co., Ltd. system, SG-P3)
(d) 67 parts of preparing spherical SiO 2s (ア De マ テ ッ Network ス Co., Ltd. system, SO-E2)
After this adhesive compound solution coat is upper to the demoulding processing film (partition) by forming through the pet film of polysiloxanes demoulding thickness 50 μ m after treatment, be dried 2 minutes at 130 ℃.Thus, make the die bonding film precursor of thickness 25 μ m.
The die bonding film precursor of making is carried out to stamping-out, and to make base portion be the circular of diameter 330mm and the sheet that stretches out with shape shown in Fig. 2, makes the die bonding film of the present embodiment of the plan view shape on the whole with Figure 1B.The details of shape of stretching out sheet are as shown in table 1.
(making of the dicing/die bonding film with partition)
Then, be transferred on cutting film (Dong electrician company manufactures, trade name " DU-2187G ") thering is the die bonding film that stretches out sheet.Transfer printing so that cutting film the adhesive phase mode relative with die bonding film carry out.Be that the diameter that circle makes to cut film is 370mm by this duplexer stamping-out, obtain thus the dicing/die bonding film with partition of the present embodiment.
[embodiment 2]
The die bonding film precursor of making is similarly to Example 1 carried out to stamping-out, make base portion be the circular of diameter 330mm and there is shape shown in Fig. 5 A stretch out sheet and extension, make the die bonding film of the plan view shape on the whole with Fig. 5 B, in addition, make similarly to Example 1 the dicing/die bonding film with partition.The shape of in addition, stretching out sheet similarly to Example 1.The details of shape of stretching out sheet are as shown in table 1.
[embodiment 3]
The shape of stretching out sheet is set as to the shape shown in Fig. 6 M, in addition, makes similarly to Example 1 the dicing/die bonding film with partition.The details of shape of stretching out sheet are as shown in table 1.
[embodiment 4]
The shape of stretching out sheet is set as to the shape shown in Fig. 6 C, in addition, makes similarly to Example 1 the dicing/die bonding film with partition.The details of shape of stretching out sheet are as shown in table 1.
[comparative example 1]
On die bonding film, do not arrange and stretch out sheet, plan view shape is set as to the circle of diameter 330mm, in addition, make similarly to Example 1 the dicing/die bonding film with partition.The details of shape of stretching out sheet are as shown in table 1.
The evaluation > of the fissility of < partition
Use wafer fitting machine (Dong Jing machine company manufactures, trade name " MA3000II "), partition is peeled off from the dicing/die bonding film with partition of embodiment and comparative example.In addition, in embodiment 1～4, stretch out a side of sheet from being provided with and peel off.While peeling off die bonding film from cutting film (when die bonding film remains on partition), be bad by the average evaluation that is stripped from predetermined region of pasting 12 inches of wafers on part arrival die bonding film of cutting film, and sample number is set as to 50, obtains fraction defective { (umber of defectives/all sample numbers) × 100 (%) }.Result is as shown in table 1.
Figure BDA0000399702200000291
< result >
As shown in Table 1, what protrude laterally by the peripheral part setting at die bonding film stretches out sheet, can easily carry out dicing/die bonding film peeling off from partition.

Claims (12)

1. the dicing/die bonding film with partition, it obtains with this sequential cascade by partition, peripheral part in the time overlooking being had to the die bonding film that stretches out sheet and the cutting film that protrude laterally.
2. the dicing/die bonding film with partition as claimed in claim 1, wherein, described in stretch out sheet and have the leading section of taper.
3. the dicing/die bonding film with partition as claimed in claim 2, wherein, described in stretch out sheet and have the leading section of V-arrangement.
4. the dicing/die bonding film with partition as claimed in claim 3, wherein, more than the interior angle of the leading section of described V-arrangement is 30 ° and below 90 °.
5. the dicing/die bonding film with partition as claimed in claim 1, wherein, with the described maximum gauge distance of stretching out the pars intermedia between root and the leading section that the above minimum diameter distance of stretching out the root of sheet of the vertical direction of direction stretches out sheet described in being less than of stretching out sheet.
6. the dicing/die bonding film with partition as claimed in claim 5, wherein, the minimum diameter distance of described root is below 1mm.
7. the dicing/die bonding film with partition as claimed in claim 1, wherein, described partition is long size partition.
8. the dicing/die bonding film with partition as claimed in claim 7, wherein, described in stretch out the length direction configuration of sheet along described long size partition.
9. the dicing/die bonding film with partition as described in any one in claim 1 to 8, wherein, on described die bonding film, a part for the periphery of the described die bonding film in the time overlooking be formed with to clip in this periphery described in stretch out two of sheet and stretch out two points in this periphery of starting point as stretching out starting point and stretching out starting point as the taper extension that stretches out forward terminal using described two of stretching out sheet
Described in connecting respectively, stretching out two of sheet stretches out two line segments that starting point and described extension two stretch out starting point and is positioned at by described two of stretching out sheet and stretches out any one of starting point and two inner sides of stretching out the circular arc of these three points of starting point of described extension.
10. the dicing/die bonding film with partition as claimed in claim 9, wherein, described two line segments are straight line.
11. dicing/die bonding films with partition as claimed in claim 10, wherein, more than described two line segment angulations are 120 ° and below 175 °.
12. dicing/die bonding films with partition as claimed in claim 1, wherein, described cutting film has base material and is layered in the adhesive phase on this base material,
The stacked die bonding film of stating to some extent on the described adhesive phase of described cutting film.
CN201310499530.0A 2012-10-31 2013-10-22 Dicing/die bonding film with partition Active CN103794530B (en)

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TWI602228B (en) 2017-10-11
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