TW201510162A - Die bond film with dicing tape and production method of semiconductor device - Google Patents

Die bond film with dicing tape and production method of semiconductor device Download PDF

Info

Publication number
TW201510162A
TW201510162A TW103125026A TW103125026A TW201510162A TW 201510162 A TW201510162 A TW 201510162A TW 103125026 A TW103125026 A TW 103125026A TW 103125026 A TW103125026 A TW 103125026A TW 201510162 A TW201510162 A TW 201510162A
Authority
TW
Taiwan
Prior art keywords
die
bonding film
film
bonding
dicing tape
Prior art date
Application number
TW103125026A
Other languages
Chinese (zh)
Other versions
TWI673338B (en
Inventor
Kenji Onishi
Yuki Sugo
Yuichiro Shishido
Yuta Kimura
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201510162A publication Critical patent/TW201510162A/en
Application granted granted Critical
Publication of TWI673338B publication Critical patent/TWI673338B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The die bond film with a dicing tape of this invention includes a dicing tape and a die bond film. The die bond film includes a thermoplastic resin (a) and a thermosetting resin (b) with a viscosity of 0.1 Pa.sec to 50 Pa.sec under 25 DEG C. The thermosetting resin (b) is one or more selected from a group consisting of an epoxy resin and a phenol resin. An amount of the thermosetting resin (b) relative to all resin components is between 1 wt% to 50 wt%, and a storing elastic modulus of the thermosetting resin (b) after a thermal curing under 170 DEG C for 1 hour is 0.05 Mpa or more under 260 DEG C.

Description

帶切割帶的晶粒接合膜及半導體裝置的製造方法 Die-bonding film with dicing tape and method of manufacturing semiconductor device

本發明是有關於一種帶切割帶的晶粒接合膜、及半導體裝置的製造方法。 The present invention relates to a die bonding film with a dicing tape and a method of manufacturing a semiconductor device.

先前，在半導體裝置的製造時半導體晶片在導線架(lead frame)或電極構件上的固著使用銀膏。所述固著處理是在導線架的晶粒焊墊(die pad)等上塗敷膏狀黏接劑，並在其上搭載半導體晶片使膏狀黏接劑層硬化而進行。 Previously, silver paste was used for the fixation of a semiconductor wafer on a lead frame or an electrode member at the time of manufacture of a semiconductor device. The fixing treatment is performed by applying a paste-like adhesive to a die pad or the like of a lead frame, and mounting a semiconductor wafer thereon to harden the paste-like adhesive layer.

然而，膏狀黏接劑會因其黏度行為或劣化等而在塗敷量或塗敷形狀等方面產生大的不均。其結果，所形成的膏狀黏接劑的厚度變得不均勻，因此半導體晶片的固著強度的可靠性缺乏。即，若膏狀黏接劑的塗敷量不足，則半導體晶片與電極構件之間的固著強度變低，在其後的打線接合步驟中半導體晶片會剝離。另一方面，若膏狀黏接劑的塗敷量過多，則膏狀黏接劑會流延至半導體晶片上而產生特性不良，良率或可靠性降低。此種固著處理的問題隨著半導體晶片的大型化而變得特別顯著。因此，需要頻繁進行膏狀黏接劑的塗敷量的控制，而對作業性或生產性造成 妨礙。 However, the paste-like adhesive may cause large unevenness in coating amount or coating shape due to its viscosity behavior or deterioration. As a result, the thickness of the formed paste-like adhesive becomes uneven, and thus the reliability of the fixing strength of the semiconductor wafer is lacking. That is, if the application amount of the paste-like adhesive is insufficient, the fixing strength between the semiconductor wafer and the electrode member is lowered, and the semiconductor wafer is peeled off in the subsequent bonding step. On the other hand, if the application amount of the paste-like adhesive is too large, the paste-like adhesive is cast onto the semiconductor wafer to cause poor properties, and the yield or reliability is lowered. The problem of such a fixing process becomes particularly remarkable as the size of the semiconductor wafer is increased. Therefore, it is necessary to frequently control the amount of application of the paste-like adhesive, which causes workability or productivity. Obstruction.

在所述膏狀黏接劑的塗敷步驟中，有將膏狀黏接劑另外 塗佈於導線架或形成晶片的方法。但是，在所述方法中，膏狀黏接劑層的均勻化困難，且膏狀黏接劑的塗佈需要特殊裝置或長時間。因此，揭示在切割步驟中將半導體晶圓進行黏接保持，並且亦賦予黏著(mount)步驟所需要的晶片固著用黏接劑層的帶切割帶的晶粒接合膜(例如參照下述專利文獻1)。 In the coating step of the paste adhesive, there is a paste adhesive A method of coating a lead frame or forming a wafer. However, in the method, the homogenization of the paste-like adhesive layer is difficult, and the application of the paste-like adhesive requires special equipment or a long time. Therefore, a die-bonding film with a dicing tape for bonding and holding a semiconductor wafer in a cutting step and also providing a bonding layer for a wafer fixing required for a mounting step is disclosed (for example, refer to the following patent) Document 1).

此種帶切割帶的晶粒接合膜具有在切割帶上積層黏接 劑層(晶粒接合膜)的結構。另外，切割帶為在支撐基材上積層有黏著劑層的結構。所述帶切割帶的晶粒接合膜以如下方式使用。即，在藉由晶粒接合膜的保持下將半導體晶圓切割後，將支撐基材延伸而將半導體晶片與晶粒接合膜一起剝離，並將其分別回收。繼而，經由晶粒接合膜將半導體晶片黏接固定於雙順丁烯二醯亞胺-三嗪(Bismaleimide Triazine，BT)基板或導線架等被黏接體上。 The die-bonding film with the dicing tape has a layer of adhesion on the dicing tape The structure of the agent layer (grain bonding film). Further, the dicing tape is a structure in which an adhesive layer is laminated on a support substrate. The die-bonding film with a dicing tape is used in the following manner. That is, after the semiconductor wafer is diced by the retention of the die-bonding film, the support substrate is extended to peel the semiconductor wafer together with the die-bonding film, and these are separately collected. Then, the semiconductor wafer is bonded and fixed to a bonded body such as a Bismetimide Triazine (BT) substrate or a lead frame via a die bond film.

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開昭60-57642號公報 [Patent Document 1] Japanese Patent Laid-Open No. 60-57642

近年來，存在如下傾向：半導體晶片封裝的多階段化取得進展，打線接合步驟或晶粒接合膜的硬化步驟需要長時間。在 所述步驟中，將帶切割帶的晶粒接合膜的晶粒接合膜在高溫下進行長時間處理，進行藉由密封樹脂的密封步驟作為以後的步驟時，存在於晶粒接合膜與被黏接體的邊界滯留氣泡(空隙)的狀態。若使用產生如此空隙的半導體裝置進行作為半導體關聯零件的可靠性評價而進行的耐濕回流焊試驗，則會在所述邊界產生剝離，而成為半導體裝置的可靠性說不上充分的狀況。 In recent years, there has been a tendency that the multi-stage formation of a semiconductor wafer package progresses, and the wire bonding step or the hardening step of the die-bonding film takes a long time. in In the step, the die-bonding film of the die-bonding film with a dicing tape is subjected to a long-time treatment at a high temperature, and a sealing step by a sealing resin is performed as a subsequent step, and the die-bonding film is adhered to the film. The state of the bubble (void) is retained at the boundary of the body. When a wet-resistance reflow test performed as a reliability evaluation of a semiconductor-related component is performed using a semiconductor device having such a gap, peeling occurs at the boundary, and the reliability of the semiconductor device is not sufficient.

另外，此種晶粒接合膜為熱硬化性，因此需要在冷藏中進行運輸、保管，但此時有在晶粒接合膜產生龜裂、裂紋、碎片的擔憂，亦存在可使用的膜減少的課題。 Further, since such a die-bonding film is thermosetting, it needs to be transported and stored in a refrigerated state. However, in this case, cracks, cracks, and chips may be generated in the die-bonding film, and a usable film may be reduced. Question.

本發明鑒於所述問題點而成，其目的在於提供一種帶切割帶的晶粒接合膜、及使用所述帶切割帶的晶粒接合膜的半導體裝置的製造方法，所述帶切割帶的晶粒接合膜在高溫下進行長時間熱處理的條件下，亦可在密封步驟後抑制在晶粒接合膜與被黏接體的邊界滯留氣泡(空隙)，且亦可在冷藏運輸、保管時抑制在膜上產生龜裂、裂紋、碎片。 The present invention has been made in view of the above problems, and an object thereof is to provide a die bonding film with a dicing tape and a method of manufacturing a semiconductor device using the dicing tape with a dicing tape, the dicing tape When the grain bonding film is subjected to long-term heat treatment at a high temperature, bubbles (voids) may be prevented from remaining at the boundary between the die-bonding film and the adherend after the sealing step, and may be suppressed during refrigerating transportation and storage. Cracks, cracks, and fragments are formed on the film.

本申請案發明者等人為了解決所述先前的課題，而對帶切割帶的晶粒接合膜進行了研究。其結果發現，藉由在晶粒接合膜中含有熱塑性樹脂、及具有特定黏度的熱硬化性樹脂，而即便在高溫下進行長時間熱處理的條件下，亦可在密封步驟後抑制在晶粒接合膜與被黏接體的邊界滯留氣泡(空隙)，且亦可在冷藏運輸、保管時抑制在膜上產生龜裂、裂紋、碎片，從而完成了本發 明。 In order to solve the above problems, the inventors of the present application have studied the die-bonding film with a dicing tape. As a result, it has been found that by including a thermoplastic resin and a thermosetting resin having a specific viscosity in the die-bonding film, it is possible to suppress grain bonding after the sealing step even under the condition of long-term heat treatment at a high temperature. The film and the boundary of the adherend retain bubbles (voids), and it is also possible to suppress cracks, cracks, and fragments on the film during refrigerated transportation and storage, thereby completing the present invention. Bright.

即，本發明的帶切割帶的晶粒接合膜具有在基材上積層有黏著劑層的切割帶、及積層於所述黏著劑層上的晶粒接合膜，且其特徵在於：所述晶粒接合膜含有熱塑性樹脂(a)、及25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，所述熱硬化性樹脂(b)為選自由環氧樹脂及酚樹脂所組成的組群的1種以上，所述熱硬化性樹脂(b)相對於全部樹脂成分的含量為1重量%以上、50重量%以下，所述晶粒接合膜在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數為0.05MPa以上。 That is, the die-bonding film with a dicing tape of the present invention has a dicing tape in which an adhesive layer is laminated on a substrate, and a grain bonding film laminated on the adhesive layer, and is characterized in that the crystal The particle bonding film contains a thermoplastic resin (a) and a viscosity at 25 ° C of 0.1 Pa. Sec~50Pa. The thermosetting resin (b) of the sec, the thermosetting resin (b) is one or more selected from the group consisting of an epoxy resin and a phenol resin, and the thermosetting resin (b) is relative to all The content of the resin component is 1% by weight or more and 50% by weight or less, and the storage elastic modulus at 260 ° C after the grain bonding film is heat-hardened at 170 ° C for 1 hour is 0.05 MPa or more.

根據所述構成，相對於全部樹脂成分，晶粒接合膜含有1重量%以上、50重量%以下的25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)。由於相對於全部樹脂成分而所述晶粒接合膜含有1重量%以上的25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，因此即便在高溫下進行長時間熱處理的條件下，亦可適度抑制反應，並可在密封步驟後抑制在晶粒接合膜與被黏接體的邊界滯留氣泡(空隙)。 According to the above configuration, the grain bonding film contains 1% by weight or more and 50% by weight or less of the viscosity at 25° C. of 0.1 Pa. Sec~50Pa. Sec thermosetting resin (b). The grain-bonding film contains 1% by weight or more of the viscosity at 25 ° C of 0.1 Pa. Sec~50Pa. Since the thermosetting resin (b) of sec is used, the reaction can be appropriately suppressed even under the conditions of long-term heat treatment at a high temperature, and the bubbles remaining at the boundary between the die-bonding film and the adherend can be suppressed after the sealing step. (void).

另外，由於相對於全部樹脂成分而所述晶粒接合膜含有1重量%以上的25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，因此亦可在冷藏運輸、保管時抑制在膜上產生龜裂、裂紋、 碎片。另一方面，由於相對於全部樹脂成分而含有50重量%以下的所述熱硬化性樹脂(b)，因此可抑制過度的黏性，並可使拾取性變得良好。 Further, the grain-bonding film contains 1% by weight or more of the viscosity at 25 ° C with respect to the entire resin component of 0.1 Pa. Sec~50Pa. Since the thermosetting resin (b) of sec can suppress cracks and cracks on the film during refrigerated transportation and storage, Fragmentation. On the other hand, since the thermosetting resin (b) is contained in an amount of 50% by weight or less based on the entire resin component, excessive stickiness can be suppressed, and pickup property can be improved.

另外，由於所述晶粒接合膜在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數為0.05MPa以上，因此可使耐濕回流焊試驗的可靠性變得良好。 Further, since the storage elastic modulus at 260 ° C after the grain bonding film was heat-hardened at 170 ° C for 1 hour was 0.05 MPa or more, the reliability of the moisture-resistant reflow soldering test was improved.

如此，根據所述構成，由於所述晶粒接合膜含有熱塑性樹脂(a)、及25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，所述熱硬化性樹脂(b)為選自由環氧樹脂及酚樹脂所組成的組群的1種以上，所述熱硬化性樹脂(b)相對於全部樹脂成分的含量為1重量%以上、50重量%以下，所述晶粒接合膜在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數為0.05MPa以上，因此即便在高溫下進行長時間熱處理的條件下，亦可在密封步驟後抑制在晶粒接合膜與被黏接體的邊界滯留氣泡(空隙)，並可使耐濕回流焊試驗的可靠性變得良好，而且亦可在冷藏運輸、保管時抑制在膜上產生龜裂、裂紋、碎片。 Thus, according to the above configuration, the die-bonding film contains the thermoplastic resin (a) and has a viscosity at 25 ° C of 0.1 Pa. Sec~50Pa. The thermosetting resin (b) of the sec, the thermosetting resin (b) is one or more selected from the group consisting of an epoxy resin and a phenol resin, and the thermosetting resin (b) is relative to all The content of the resin component is 1% by weight or more and 50% by weight or less, and the storage elastic modulus at 260° C. after the heat treatment of the crystal grain bonded film at 170° C. for 1 hour is 0.05 MPa or more, so that even at a high temperature Under the condition of long-time heat treatment, it is possible to suppress the retention of bubbles (voids) at the boundary between the die-bonding film and the adherend after the sealing step, and to improve the reliability of the moisture-resistant reflow test, and It is also possible to suppress cracks, cracks, and fragments on the film during refrigerated transportation and storage.

在所述構成中，較佳為所述熱塑性樹脂(a)為含有官能基的丙烯酸系共聚物。若所述熱塑性樹脂(a)為含有官能基的丙烯酸系共聚物，則在熱硬化時，在所述官能基與熱硬化性樹脂(b)之間進行交聯。其結果，可使將低分子成分交聯的結果、耐熱回流焊試驗的可靠性變得更良好。 In the above configuration, the thermoplastic resin (a) is preferably an acrylic copolymer containing a functional group. When the thermoplastic resin (a) is a functional group-containing acrylic copolymer, crosslinking is performed between the functional group and the thermosetting resin (b) at the time of thermal curing. As a result, the result of crosslinking the low molecular component and the reliability of the heat resistant reflow soldering test can be further improved.

在所述構成中，所述熱硬化性樹脂(b)較佳為下述化 學式(1)所示的熱硬化性樹脂。 In the above configuration, the thermosetting resin (b) is preferably as follows. A thermosetting resin represented by the formula (1).

(其中，式中，n為0~10的整數，R1分別獨立地表示烯丙基或H，至少1個為烯丙基，m為1~3的整數。) (wherein, n is an integer of 0 to 10, R 1 each independently represents an allyl group or H, at least one is an allyl group, and m is an integer of 1 to 3.)

若所述熱硬化性樹脂(b)為所述化學式(1)所示的熱硬化性樹脂，則由於具有烯丙基，並且由於烯丙基的蓬鬆，而抑制熱硬化反應的進行速度。其結果可抑制在運輸、保管時進行硬化反應。 When the thermosetting resin (b) is a thermosetting resin represented by the above chemical formula (1), it has an allyl group and the fluffiness of the allyl group suppresses the progress of the thermosetting reaction. As a result, it is possible to suppress the hardening reaction during transportation and storage.

在所述構成中，較佳為所述晶粒接合膜在5℃下的斷裂伸長率為10%以上。若所述晶粒接合膜在5℃下的斷裂伸長率為10%以上，則亦可在冷藏運輸、保管時進一步抑制在膜上產生龜裂、裂紋、碎片。 In the above configuration, it is preferred that the die-bonding film has an elongation at break at 5 ° C of 10% or more. When the elongation at break of the die-bonding film at 5 ° C is 10% or more, it is possible to further suppress occurrence of cracks, cracks, and chips on the film during refrigerating transportation and storage.

在所述構成中，較佳為所述黏著劑層包含含有丙烯酸2-乙基己酯作為結構單元的丙烯酸系聚合物。在本發明中，由於晶粒接合膜含有25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，因此有黏著劑層與晶粒接合膜過度密接的擔憂。然而，若所述黏著劑層包含含有丙烯酸2-乙基己酯作為結構單元的丙烯 酸系聚合物，則可使自晶粒接合膜的剝離性變得良好。 In the above configuration, it is preferred that the adhesive layer contains an acrylic polymer containing 2-ethylhexyl acrylate as a structural unit. In the present invention, since the grain bonding film contains a viscosity at 25 ° C of 0.1 Pa. Sec~50Pa. Since the thermosetting resin (b) is sec, there is a concern that the adhesive layer and the die-bonding film are excessively adhered to each other. However, if the adhesive layer contains propylene containing 2-ethylhexyl acrylate as a structural unit The acid polymer can improve the peelability from the die-bonding film.

另外，本發明的半導體裝置的製造方法的特徵在於包括：貼合步驟，將所述記載的帶切割帶的晶粒接合膜的晶粒接合膜、與半導體晶圓的背面貼合；切割步驟，將所述半導體晶圓與所述帶切割帶的晶粒接合膜一起切割，而形成晶片狀半導體元件；拾取步驟，將所述半導體元件與所述晶粒接合膜一起自所述帶切割帶的晶粒接合膜拾取；晶粒接合步驟，經由所述晶粒接合膜，將所述半導體元件在被黏接體上進行晶粒接合；打線接合步驟，對所述半導體元件進行打線接合；及將所述半導體元件進行密封的步驟。 Further, a method of manufacturing a semiconductor device according to the present invention includes a bonding step of bonding a die bond film of the die-bonding film with a dicing tape described above to a back surface of a semiconductor wafer, and a dicing step. Cutting the semiconductor wafer together with the die-bonding film with a dicing tape to form a wafer-shaped semiconductor component; and picking up the semiconductor component together with the die-bonding film from the tape cutting tape Grain-bonding film pick-up; a die bonding step of performing die bonding of the semiconductor element on a bonded body via the die-bonding film; wire bonding step of bonding the semiconductor element; and The semiconductor element is subjected to a sealing step.

根據所述構成，由於所述晶粒接合膜含有熱塑性樹脂(a)、及25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，所述熱硬化性樹脂(b)為選自由環氧樹脂及酚樹脂所組成的組群的1種以上，所述熱硬化性樹脂(b)相對於全部樹脂成分的含量為1重量%以上、50重量%以下，所述晶粒接合膜在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數為0.05MPa以上，因此即便在高溫下進行長時間熱處理的條件下，亦可在密封步驟後抑制在晶粒接合膜與被黏接體的邊界滯留氣泡(空隙)，並可使耐濕回流焊試驗的可靠性變得良好，而且亦可在冷藏運輸、保管時抑制在膜上產生龜裂、裂紋、碎片。 According to the above configuration, the grain bonding film contains the thermoplastic resin (a) and has a viscosity at 25 ° C of 0.1 Pa. Sec~50Pa. The thermosetting resin (b) of the sec, the thermosetting resin (b) is one or more selected from the group consisting of an epoxy resin and a phenol resin, and the thermosetting resin (b) is relative to all The content of the resin component is 1% by weight or more and 50% by weight or less, and the storage elastic modulus at 260° C. after the heat treatment of the crystal grain bonded film at 170° C. for 1 hour is 0.05 MPa or more, so that even at a high temperature Under the condition of long-time heat treatment, it is possible to suppress the retention of bubbles (voids) at the boundary between the die-bonding film and the adherend after the sealing step, and to improve the reliability of the moisture-resistant reflow test, and It is also possible to suppress cracks, cracks, and fragments on the film during refrigerated transportation and storage.

根據本發明的帶切割帶的晶粒接合膜、及半導體裝置的製造方法，即便在高溫下進行長時間熱處理的條件下，亦可在密封步驟後抑制在晶粒接合膜與被黏接體的邊界滯留氣泡(空隙)，並可使耐濕回流焊試驗的可靠性變得良好，而且亦可在冷藏運輸、保管時抑制在膜上產生龜裂、裂紋、碎片。 According to the die-bonding film with a dicing tape of the present invention and the method for producing a semiconductor device, it is possible to suppress the bonding between the die-bonding film and the adherend after the sealing step even under the condition of performing long-time heat treatment at a high temperature. Air bubbles (voids) are trapped at the boundary, and the reliability of the wet-resistance reflow test can be improved, and cracks, cracks, and chips on the film can be suppressed during refrigerating and storage.

1‧‧‧基材 1‧‧‧Substrate

2‧‧‧黏著劑層 2‧‧‧Adhesive layer

2a‧‧‧與圖2所示的黏著劑層2的工件貼附部分對應的部分 2a‧‧‧Parts corresponding to the workpiece attachment portion of the adhesive layer 2 shown in Fig. 2

2b‧‧‧其他部分 2b‧‧‧Other parts

3、3'、13、21‧‧‧晶粒接合膜 3, 3', 13, 21‧‧‧ grain bonded film

3a‧‧‧工件貼附部分(晶粒接合膜) 3a‧‧‧Working part attachment (grain bonding film)

3b‧‧‧工件貼附部分3a以外的部分 3b‧‧‧Parts other than the part 3a attached to the workpiece

4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer

5‧‧‧半導體晶片 5‧‧‧Semiconductor wafer

6‧‧‧被黏接體 6‧‧‧Binders

7‧‧‧接合線 7‧‧‧bonding line

8‧‧‧密封樹脂 8‧‧‧ Sealing resin

9‧‧‧間隔件 9‧‧‧ spacers

10、11‧‧‧帶切割帶的晶粒接合膜 10,11‧‧‧Cutting film with dicing tape

15‧‧‧半導體晶片 15‧‧‧Semiconductor wafer

圖1是表示本發明的一個實施形態的帶切割帶的晶粒接合膜的剖面示意圖。 Fig. 1 is a schematic cross-sectional view showing a die-bonding film with a dicing tape according to an embodiment of the present invention.

圖2是表示所述實施形態的其他帶切割帶的晶粒接合膜的剖面示意圖。 Fig. 2 is a schematic cross-sectional view showing another die-bonding film with a dicing tape according to the embodiment.

圖3是表示經由所述帶切割帶的晶粒接合膜的晶粒接合膜而封裝半導體晶片的例子的剖面示意圖。 3 is a schematic cross-sectional view showing an example of packaging a semiconductor wafer via a die bond film of a die bond film with a dicing tape.

圖4是表示經由所述帶切割帶的晶粒接合膜的晶粒接合膜而將半導體晶片進行三維封裝的例子的剖面示意圖。 4 is a schematic cross-sectional view showing an example in which a semiconductor wafer is three-dimensionally packaged via a die bond film of a die bond film with a dicing tape.

圖5是表示使用所述帶切割帶的晶粒接合膜，經由間隔件藉由晶粒接合膜將2個半導體晶片進行三維封裝的例子的剖面示意圖。 5 is a schematic cross-sectional view showing an example in which two semiconductor wafers are three-dimensionally packaged by a die bond film via a spacer using a die bond film with a dicing tape.

本實施形態的帶切割帶的晶粒接合膜10為在切割帶上積層有晶粒接合膜3的結構(參照圖1)。所述切割帶為在基材1 上積層有黏著劑層2的結構。晶粒接合膜3積層於切割帶的黏著劑層2上。 The die-bonding film-attached film 10 of the present embodiment has a structure in which a die-bonding film 3 is laminated on a dicing tape (see FIG. 1). The dicing tape is on the substrate 1 The upper laminate has the structure of the adhesive layer 2. The die-bonding film 3 is laminated on the adhesive layer 2 of the dicing tape.

<晶粒接合膜> <grain bonding film>

晶粒接合膜3含有熱塑性樹脂(a)、及在25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)。晶粒接合膜3在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數為0.05MPa以上，較佳為0.07MPa以上。另外，晶粒接合膜3在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數，並無特別限制，例如為2000MPa以下。由於晶粒接合膜3在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數為0.05MPa以上，因此可使耐濕回流焊試驗的可靠性變得良好。 The die-bonding film 3 contains the thermoplastic resin (a) and has a viscosity of 0.1 Pa at 25 ° C. Sec~50Pa. Sec thermosetting resin (b). The storage elastic modulus at 260 ° C of the die-bonding film 3 after heat curing at 170 ° C for 1 hour is 0.05 MPa or more, preferably 0.07 MPa or more. In addition, the storage elastic modulus at 260 ° C after the grain bonding film 3 is heat-hardened at 170 ° C for 1 hour is not particularly limited, and is, for example, 2000 MPa or less. Since the storage elastic modulus at 260 ° C after the grain bonding film 3 is heat-hardened at 170 ° C for 1 hour is 0.05 MPa or more, the reliability of the moisture-resistant reflow soldering test can be improved.

(熱塑性樹脂(a)) (thermoplastic resin (a))

作為所述熱塑性樹脂(a)，可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、含有官能基的丙烯酸系共聚物、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧樹脂、丙烯酸系樹脂、聚對苯二甲酸乙二酯(Polyethylene Terephthalate，PET)或聚對苯二甲酸丁二酯(Polybutylene Terephthalate，PBT)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。所述熱塑性樹脂可單獨使用，或併用2種以上而使用。所述熱塑性樹脂中，特佳為含有官能基的丙烯酸系共聚物。在熱硬化時，在所述官能基與熱硬化性樹脂 (b)之間進行交聯。其結果，可使將低分子成分交聯的結果、耐熱回流焊試驗的可靠性變得良好。 Examples of the thermoplastic resin (a) include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, functional group-containing acrylic copolymer, ethylene-vinyl acetate copolymer, and ethylene. Acrylic copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamine resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic A saturated polyester resin such as a resin, a polyethylene terephthalate (PET) or a polybutylene terephthalate (PBT), a polyamidoximine resin, or a fluororesin. These thermoplastic resins may be used singly or in combination of two or more. Among the thermoplastic resins, an acrylic copolymer containing a functional group is particularly preferred. In the case of thermosetting, the functional group and the thermosetting resin Cross-linking between (b). As a result, the result of crosslinking the low molecular component and the reliability of the heat resistant reflow soldering test can be improved.

作為所述含有官能基的丙烯酸系共聚物，若為具有官能 基的丙烯酸系共聚物，則並無特別限定。作為所述官能基，可列舉縮水甘油基、羧基、羥基等。在含有官能基的丙烯酸系共聚物中導入所述官能基的方法並無特別限定，可藉由含有官能基的單體與其他單體成分的共聚合而導入，亦可在製備丙烯酸系單體的共聚物後使所述共聚物與具有所述官能基的化合物反應而導入。 若考慮到含有官能基的丙烯酸系共聚物的製備的容易性等，則較佳為藉由含有官能基的單體與其他單體的共聚合的導入。作為含有官能基的單體，可較佳地使用：具有所述官能基、且具有可共聚合的乙烯性不飽和鍵的單體，例如可列舉：丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯、丙烯酸、丙烯酸羥基乙酯等。作為含有官能基的丙烯酸系共聚物中的含有官能基的單體的含量，只要考慮作為目標的含有官能基的丙烯酸系共聚物的玻璃轉移點(Tg)等而決定即可。 As the functional group-containing acrylic copolymer, if it has a function The acrylic copolymer of the base is not particularly limited. Examples of the functional group include a glycidyl group, a carboxyl group, and a hydroxyl group. The method of introducing the functional group into the functional group-containing acrylic copolymer is not particularly limited, and it can be introduced by copolymerization of a functional group-containing monomer with another monomer component, or an acrylic monomer can be prepared. The copolymer is then introduced by reacting the copolymer with a compound having the functional group. When the ease of preparation of the functional group-containing acrylic copolymer or the like is considered, it is preferred to introduce the copolymerization of the functional group-containing monomer with another monomer. As the monomer having a functional group, a monomer having the functional group and having a copolymerizable ethylenically unsaturated bond can be preferably used, and examples thereof include glycidyl acrylate and glycidyl methacrylate. , acrylic acid, hydroxyethyl acrylate, and the like. The content of the functional group-containing monomer in the functional group-containing acrylic copolymer may be determined in consideration of a glass transition point (Tg) or the like of the target functional group-containing acrylic copolymer.

作為構成所述含有官能基的丙烯酸系共聚物的其他單 體，例如可列舉：丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸丁酯、丙烯酸戊酯、丙烯酸己酯等具有碳數為1~8的烷基的丙烯酸烷基酯，甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸丁酯、丙烯酸戊酯、丙烯酸己酯等具有碳數為1~8的烷基的甲基丙烯酸烷基酯，丙烯腈，苯乙烯，如丙烯酸、甲 基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、順丁烯二酸、反丁烯二酸或丁烯酸等般含有羧基的單體，如順丁烯二酸酐或衣康酸酐等般的酸酐單體，如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)-甲酯等般含有羥基的單體，如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯醯氧基萘磺酸等般含有磺酸基的單體，或如2-羥基乙基丙烯醯基磷酸酯等般含有磷酸基的單體等。所述其他單體可使用1種或組合2種以上而使用。所述其他單體中，較佳為包含丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸丁酯、甲基丙烯酸丁酯、丙烯腈中的至少1種。混合比率較佳為考慮共聚物的玻璃轉移點(Tg)等進行調整。 Other single sheets constituting the functional group-containing acrylic copolymer Examples of the body include alkyl acrylate having a carbon number of 1 to 8 such as methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, amyl acrylate or hexyl acrylate, and methacrylic acid. An alkyl methacrylate having an alkyl group having a carbon number of 1 to 8, an acrylonitrile, a benzene such as an ester, ethyl methacrylate, propyl methacrylate, butyl methacrylate, amyl acrylate or hexyl acrylate. Ethylene, such as acrylic acid, nail a monomer having a carboxyl group such as maleic anhydride, carboxyethyl acrylate, carboxy amyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid, such as maleic anhydride or itaconic anhydride Equal anhydride monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyl (meth)acrylate Ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate or (4-hydroxymethylcyclohexyl)-methyl acrylate a hydroxyl group-containing monomer such as styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamidoxime-2-methylpropanesulfonic acid, (meth)acrylamidamine propanesulfonic acid, (methyl) A monomer containing a sulfonic acid group such as sulfopropyl acrylate or (meth) propylene decyl naphthalenesulfonic acid, or a monomer having a phosphate group such as 2-hydroxyethyl decyl phosphatidyl phosphate. These other monomers may be used alone or in combination of two or more. Among the other monomers, at least one of ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, and acrylonitrile is preferably contained. The mixing ratio is preferably adjusted in consideration of the glass transition point (Tg) of the copolymer.

所述含有官能基的丙烯酸系共聚物的玻璃轉移點(Tg)只要獲得晶粒接合膜與矽晶圓之間的適度的黏接性，則並無特別限定，較佳為-30℃以上、40℃以下，更佳為-20℃以上、30℃以下。若玻璃轉移點小於-30℃，則有所述含有官能基的丙烯酸系共聚物在常溫下產生黏性而難以操作的情況。另一方面，若玻璃轉移點超過40℃，則有對矽晶圓的黏接力降低的擔憂。 The glass transition point (Tg) of the functional group-containing acrylic copolymer is not particularly limited as long as it has an appropriate adhesion between the die bond film and the germanium wafer, and is preferably -30 ° C or higher. 40 ° C or less, more preferably -20 ° C or more, 30 ° C or less. When the glass transition point is less than -30 ° C, the functional group-containing acrylic copolymer may be viscous at normal temperature and difficult to handle. On the other hand, if the glass transition point exceeds 40 ° C, there is a concern that the adhesion to the germanium wafer is lowered.

(熱硬化性樹脂(b)) (thermosetting resin (b))

所述熱硬化性樹脂(b)在25℃下的黏度為0.1Pa．sec~50 Pa．sec，更佳為0.5Pa．sec~40Pa．sec。另外，所述熱硬化性樹脂(b)相對於全部樹脂成分(晶粒接合膜的全部樹脂成分)的含量，為1重量%以上、50重量%以下，較佳為1重量%以上、40重量%以下。由於相對於全部樹脂成分而晶粒接合膜3含有1重量%以上的25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，因此亦可在冷藏運輸、保管時抑制在膜上產生龜裂、裂紋、碎片。 另一方面，由於相對於全部樹脂成分而含有50重量%以下的所述熱硬化性樹脂(b)，因此可抑制過度的黏性，並可使拾取性變得良好。 The thermosetting resin (b) has a viscosity of 0.1 Pa at 25 ° C. Sec~50 Pa. Sec, preferably 0.5Pa. Sec~40Pa. Sec. Further, the content of the thermosetting resin (b) relative to all the resin components (all resin components of the die-bonding film) is 1% by weight or more and 50% by weight or less, preferably 1% by weight or more and 40% by weight. %the following. The grain-bonding film 3 contains 1% by weight or more of the viscosity at 25 ° C with respect to the entire resin component of 0.1 Pa. Sec~50Pa. Since the thermosetting resin (b) of sec can suppress cracks, cracks, and chips on the film during refrigerating and storage. On the other hand, since the thermosetting resin (b) is contained in an amount of 50% by weight or less based on the entire resin component, excessive stickiness can be suppressed, and pickup property can be improved.

所述熱硬化性樹脂(b)為選自由環氧樹脂及酚樹脂所 組成的組群的1種以上，較佳為發揮出作為所述熱塑性樹脂(a)、特別是所述含有官能基的丙烯酸系共聚物的硬化劑的作用者。 The thermosetting resin (b) is selected from the group consisting of epoxy resins and phenol resins. One or more of the constituent groups of the composition preferably have a function as a curing agent for the thermoplastic resin (a), particularly the functional group-containing acrylic copolymer.

作為所述熱硬化性樹脂(b)，例如可列舉：液狀苯酚酚 醛清漆樹脂、液狀環氧樹脂、液狀異氰酸酯樹脂等，其中，較佳為液狀酚樹脂、液狀環氧樹脂，特佳為液狀酚樹脂。所述可單獨使用，或併用2種以上而使用。另外，所謂液狀，是指25℃下的黏度為所述範圍內。 Examples of the thermosetting resin (b) include liquid phenol phenol. An aldehyde varnish resin, a liquid epoxy resin, a liquid isocyanate resin, etc., among them, a liquid phenol resin and a liquid epoxy resin are preferable, and a liquid phenol resin is particularly preferable. These can be used individually or in combination of 2 or more types. In addition, the liquid state means that the viscosity at 25 ° C is within the above range.

所述熱硬化性樹脂(b)中，較佳為下述化學式(1)所示的熱硬化性樹脂。 Among the thermosetting resins (b), a thermosetting resin represented by the following chemical formula (1) is preferred.

[化2] [Chemical 2]

(其中，式中，n為0~10的整數，R1分別獨立地表示烯丙基或H，至少1個為烯丙基，m為1~3的整數。) (wherein, n is an integer of 0 to 10, R 1 each independently represents an allyl group or H, at least one is an allyl group, and m is an integer of 1 to 3.)

就可將黏度適度地設為所期望的範圍的觀點而言，所述R1中的烯丙基的數量與H的數量的比例若以(烯丙基的數量)：(H的數量)表示，則較佳為1：3。 From the viewpoint that the viscosity can be appropriately set to a desired range, the ratio of the number of allyl groups in R 1 to the number of H is represented by (number of allyl groups): (number of H) , preferably 1:3.

另外，所述熱硬化性樹脂(b)的重量平均分子量較佳為100以上、5000以下，更佳為200以上、3000以下。藉由將所述熱硬化性樹脂(b)的重量平均分子量設為100以上、5000以下，而可與其他材料相容性佳地分散。另外，可防止向切割帶的轉移。另外，重量平均分子量是指藉由凝膠滲透層析法(Gel Permeation Chromatography，GPC)進行測定，藉由聚苯乙烯換算而算出的值。 Further, the thermosetting resin (b) preferably has a weight average molecular weight of 100 or more and 5,000 or less, more preferably 200 or more and 3,000 or less. By setting the weight average molecular weight of the thermosetting resin (b) to 100 or more and 5,000 or less, it is possible to disperse well with other materials. In addition, the transfer to the dicing tape can be prevented. In addition, the weight average molecular weight is a value calculated by gel permeation chromatography (GPC) and calculated by polystyrene conversion.

所述熱硬化性樹脂(b)若為所述化學式(1)所示的熱硬化性樹脂，則由於具有烯丙基，並且由於烯丙基的蓬鬆，而可抑制熱硬化反應的進行速度。其結果可抑制在晶粒接合膜3的運輸、保管時進行硬化反應。 When the thermosetting resin (b) is a thermosetting resin represented by the above chemical formula (1), since it has an allyl group and the fluffiness of the allyl group, the progress of the thermosetting reaction can be suppressed. As a result, it is possible to suppress the curing reaction during transport and storage of the die-bonding film 3.

作為所述熱硬化性樹脂(b)的具體的製品，可列舉：明和化成公司製造的MEH-8000-4L、MEH-8000H、MEH-8015、 MEH-8005，群榮化學工業公司製造的XPL-4437E等。 Specific examples of the thermosetting resin (b) include MEH-8000-4L, MEH-8000H, and MEH-8015 manufactured by Minghe Chemical Co., Ltd. MEH-8005, XPL-4437E manufactured by Qun Rong Chemical Industry Co., Ltd., etc.

晶粒接合膜3根據需要可適當調配無機填充劑、添加 劑。作為所述無機填充劑(無機填料)，例如可列舉：二氧化矽、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氮化鋁、硼酸鋁鬚晶、氧化鋁、氧化鋅、氮化硼、晶質二氧化矽、非晶質二氧化矽等。所述可單獨使用，或併用2種以上而使用。其中，就熱導性提高的觀點而言，較佳為鋁礬土、氮化鋁、氧化鋁(alumina)、氧化鋅、氮化硼、結晶性二氧化矽、非晶性二氧化矽等。所述無機填充劑的調配量較佳為相對於樹脂成分100重量份而設定為0重量份~95重量份。所述無機填充劑的調配量特佳為0重量份~90重量份。若晶粒接合膜3中包含無機填充劑，則可控制吸濕性。 The grain bonding film 3 can be appropriately formulated with an inorganic filler as needed Agent. Examples of the inorganic filler (inorganic filler) include cerium oxide, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, and aluminum nitride. , aluminum borate whisker, alumina, zinc oxide, boron nitride, crystalline germanium dioxide, amorphous germanium dioxide, and the like. These can be used individually or in combination of 2 or more types. Among them, from the viewpoint of improvement in thermal conductivity, bauxite, aluminum nitride, alumina, zinc oxide, boron nitride, crystalline cerium oxide, amorphous cerium oxide, or the like is preferable. The amount of the inorganic filler to be blended is preferably from 0 to 95 parts by weight based on 100 parts by weight of the resin component. The compounding amount of the inorganic filler is particularly preferably from 0 part by weight to 90 parts by weight. When the inorganic filler is contained in the grain bonding film 3, the hygroscopicity can be controlled.

作為所述添加劑，例如可列舉：阻燃劑、染料、矽烷偶 合劑或離子捕捉劑等。作為所述阻燃劑，例如可列舉：三氧化銻、五氧化銻、溴化環氧樹脂等。所述可單獨使用，或併用2種以上而使用。作為所述矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。所述化合物可單獨使用，或併用2種以上而使用。作為所述離子捕捉劑，例如可列舉：水滑石(hydrotalcite)類、氫氧化鉍等。所述可單獨使用，或併用2種以上而使用。 As the additive, for example, a flame retardant, a dye, a decane couple Mixture or ion trapping agent, etc. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These can be used individually or in combination of 2 or more types. Examples of the decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl propyl. Methyl diethoxy decane, and the like. These compounds may be used singly or in combination of two or more. Examples of the ion scavenger include hydrotalcites and barium hydroxide. These can be used individually or in combination of 2 or more types.

晶粒接合膜3在5℃下的斷裂伸長率較佳為10%以上， 更佳為15%以上。若晶粒接合膜3在5℃下的斷裂伸長率為10%以上，則亦可在冷藏運輸、保管時進一步抑制在膜上產生龜裂、裂紋、碎片。另外，就操作的觀點而言，所述晶粒接合膜3在5℃下的斷裂伸長率較佳為1500%以下，更佳為1000%以下。 The elongation at break of the die-bonding film 3 at 5 ° C is preferably 10% or more. More preferably 15% or more. When the elongation at break of the die-bonding film 3 at 5 ° C is 10% or more, it is possible to further suppress occurrence of cracks, cracks, and chips on the film during refrigerating transportation and storage. Further, from the viewpoint of handling, the elongation at break of the die-bonding film 3 at 5 ° C is preferably 1,500% or less, more preferably 1,000% or less.

另外，晶粒接合膜3在5℃下的斷裂伸長率與在25℃下 的斷裂伸長率的差，較佳為小於1000%，更佳為小於800%。若所述斷裂伸長率的差為所述數值範圍內，則可抑制因溫度變化引起的晶粒接合膜的皺褶。 In addition, the elongation at break of the die-bonding film 3 at 5 ° C is at 25 ° C The difference in elongation at break is preferably less than 1000%, more preferably less than 800%. When the difference in the elongation at break is within the above numerical range, wrinkles of the die-bonding film due to temperature change can be suppressed.

另外，晶粒接合膜在5℃下的斷裂伸長率、及在25℃下 的斷裂伸長率的測定藉由實施例記載的方法而進行。 In addition, the elongation at break of the die-bonding film at 5 ° C, and at 25 ° C The measurement of the elongation at break was carried out by the method described in the examples.

晶粒接合膜3的厚度(為積層體時為總厚度)並無特別限定，例如為3μm~200μm左右、較佳為5μm~150μm左右。 The thickness of the die-bonding film 3 (the total thickness in the case of a laminate) is not particularly limited, and is, for example, about 3 μm to 200 μm, preferably about 5 μm to 150 μm.

另外，晶粒接合膜3較佳為藉由分隔件進行保護(未圖示)。分隔件具有作為保護晶粒接合膜直至供於實用的保護材料的功能。另外，分隔件可進一步用作將晶粒接合膜3、晶粒接合膜3'轉印至切割帶時的支撐基材。分隔件是在晶粒接合膜上貼著工件時剝離。作為分隔件，亦可使用：聚對苯二甲酸乙二酯(Polyethylene Terephthalate，PET)、聚乙烯、聚丙烯，或藉由氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行表面塗佈的塑膠膜或紙等。 Further, the die-bonding film 3 is preferably protected by a separator (not shown). The separator has a function as a protective grain material for protecting the die bonding film until it is applied. Further, the separator can be further used as a support substrate when the die-bonding film 3 and the die-bonding film 3' are transferred to the dicing tape. The separator is peeled off when the workpiece is attached to the die bonding film. As the separator, polyethylene terephthalate (PET), polyethylene, polypropylene, or a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent may be used. Surface coated plastic film or paper.

另外，作為本發明的帶切割帶的晶粒接合膜，除了圖1所示的晶粒接合膜3外，亦可如圖2所示般為僅在半導體晶圓貼附部分積層晶粒接合膜3'的帶切割帶的晶粒接合膜11的構成。 Further, as the die-bonding film with a dicing tape of the present invention, in addition to the die-bonding film 3 shown in FIG. 1, as shown in FIG. 2, a portion of the die-bonding film may be laminated only on the semiconductor wafer. The structure of the 3' die-bonding film 11 with a dicing tape.

<切割帶> <cut tape>

構成帶切割帶的晶粒接合膜10、帶切割帶的晶粒接合膜11的切割帶，為在基材1上積層有黏著劑層2的結構。以下，按照基材及黏著劑層的順序進行說明。 The dicing tape 10 constituting the dicing tape and the dicing tape of the die bonding film 11 with a dicing tape have a structure in which the adhesive layer 2 is laminated on the substrate 1. Hereinafter, the description will be given in the order of the substrate and the adhesive layer.

(基材) (substrate)

所述基材1可使用具有紫外線透射性者，且為成為帶切割帶的晶粒接合膜10、帶切割帶的晶粒接合膜11的強度母體者。例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴，乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物，聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯，聚碳酸酯，聚醯亞胺，聚醚醚酮，聚醯亞胺，聚醚醯亞胺，聚醯胺，全芳香族聚醯胺，聚苯基硫醚，芳族聚醯胺(紙)，玻璃，玻璃布，氟樹脂，聚氯乙烯，聚偏二氯乙烯，纖維素系樹脂，矽酮樹脂，金屬(箔)，紙等。 The substrate 1 can be used as a strong matrix of the grain-bonding film 10 with a dicing tape and the die-bonding film 11 with a dicing tape. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, poly Polyolefins such as butene and polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymerization , ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters, polycarbonate, poly Amine, polyetheretherketone, polyimine, polyetherimide, polyamine, fully aromatic polyamine, polyphenyl sulfide, aromatic polyamine (paper), glass, glass cloth, fluorine Resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, fluorenone resin, metal (foil), paper, and the like.

另外，作為基材1的材料，可列舉所述樹脂的交聯體等聚合物。所述塑膠膜可無延伸地使用，亦可根據需要使用實施了單軸或雙軸延伸處理者。若為藉由延伸處理等而賦予熱收縮性的樹脂片，則可藉由在切割後使所述基材1進行熱收縮，而使黏著劑層2與晶粒接合膜3、晶粒接合膜3'的黏接面積降低，而謀求半 導體晶片(半導體元件)的回收的容易化。 Further, examples of the material of the substrate 1 include a polymer such as a crosslinked body of the resin. The plastic film may be used without extension, and a uniaxial or biaxial stretching treatment may be used as needed. In the case of a resin sheet which is heat-shrinkable by stretching treatment or the like, the substrate 1 can be thermally shrunk after dicing to form the adhesive layer 2, the die-bonding film 3, and the die-bonding film. 3''s bonding area is reduced, and seeking half The recovery of the conductor wafer (semiconductor element) is facilitated.

為了提高與鄰接的層的密接性、保持性等，基材1的表面可實施慣用的表面處理，例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學處理或物理處理，藉由底塗劑(例如後述的黏著物質)的塗佈處理。所述基材1可適當選擇同種或不同種者而使用，並可根據需要使用將多種混合(blend)者。 In order to improve adhesion to adjacent layers, retention, and the like, the surface of the substrate 1 may be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or the like. The treatment is carried out by a coating treatment of a primer (for example, an adhesive described later). The substrate 1 can be appropriately selected from the same species or different species, and a plurality of blends can be used as needed.

基材1的厚度並無特別限制，可適當決定，通常為5μm~200μm左右。 The thickness of the substrate 1 is not particularly limited and can be appropriately determined, and is usually about 5 μm to 200 μm.

作為用於形成黏著劑層2的黏著劑，並無特別限制，例如可使用：丙烯酸系黏著劑、橡膠系黏著劑等通常的壓感性(pressure sensitive)黏著劑。作為所述壓感性黏著劑，就半導體晶圓或玻璃等忌諱污染的電子零件的藉由超純水或醇等有機溶劑的清潔清洗性等方面而言，較佳為將丙烯酸系聚合物作為基礎聚合物的丙烯酸系黏著劑。 The adhesive for forming the adhesive layer 2 is not particularly limited, and for example, a usual pressure sensitive adhesive such as an acrylic adhesive or a rubber adhesive can be used. As the pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a basis in terms of cleaning and cleaning properties of an organic solvent such as ultrapure water or alcohol, such as a semiconductor wafer or glass. A polymer based acrylic adhesive.

作為所述丙烯酸系聚合物，例如可列舉：使用(甲基)丙烯酸烷基酯(例如甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳數為1~30、特別是碳數為4~18的直鏈狀或支鏈狀烷基酯等)、及(甲基)丙烯酸環烷基酯(例如環戊酯、環己酯 等)的1種或2種以上作為單體成分的丙烯酸系聚合物等。其中，較佳為含有丙烯酸2-乙基己酯作為結構單元。若黏著劑層2包含含有丙烯酸2-乙基己酯作為結構單元的丙烯酸系聚合物，則可使自晶粒接合膜3的剝離性變得良好。另外，所謂(甲基)丙烯酸酯，是指丙烯酸酯及/或甲基丙烯酸酯，本發明的(甲基)全部為相同的含義。 Examples of the acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third). Butyl, pentyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, decyl, decyl, isodecyl, undecyl, dodecyl An alkyl group such as an ester, a tridecyl ester, a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester has a carbon number of 1 to 30, particularly a carbon number of 4 to 18 Linear or branched alkyl esters, etc., and cycloalkyl (meth)acrylates (eg, cyclopentyl ester, cyclohexyl ester) One or two or more kinds of acrylic polymers or the like as a monomer component. Among them, 2-ethylhexyl acrylate is preferably contained as a structural unit. When the adhesive layer 2 contains an acrylic polymer containing 2-ethylhexyl acrylate as a structural unit, the peeling property from the die-bonding film 3 can be improved. Further, the term "(meth)acrylate" means acrylate and/or methacrylate, and all of the (meth) groups of the present invention have the same meaning.

為了對凝聚力、耐熱性等進行改質，所述丙烯酸系聚合 物根據需要可包含：和可與所述(甲基)丙烯酸烷基酯或(甲基)丙烯酸環烷基酯共聚合的其他單體成分對應的單元。作為此種單體成分，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、順丁烯二酸、反丁烯二酸、丁烯酸等含有羧基的單體；順丁烯二酸酐、衣康酸酐等酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含有羥基的單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯醯氧基萘磺酸等含有磺酸基的單體；2-羥基乙基丙烯醯基磷酸酯等含有磷酸基的單體；丙烯醯胺、丙烯腈等。所述可共聚合的單體成分可使用1種或2種以上。所述可共聚合的單體的使用量較佳為全部單體成分的40重量%以下。 In order to modify cohesion, heat resistance, etc., the acrylic polymerization The material may include, as needed, a unit corresponding to other monomer components copolymerizable with the alkyl (meth)acrylate or the cycloalkyl (meth)acrylate. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. a monomer having a carboxyl group such as crotonic acid; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate; ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, 12-hydroxy laurel (meth) acrylate a hydroxyl group-containing monomer such as an ester or (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methyl a sulfonic acid group-containing monomer such as propanesulfonic acid, (meth) acrylamide propyl sulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene phthaloxy naphthalene sulfonic acid; 2-hydroxyethyl a monomer containing a phosphate group such as acryloyl phosphate; acrylamide, acrylonitrile or the like. One or two or more kinds of the monomer components which can be copolymerized can be used. The amount of the copolymerizable monomer used is preferably 40% by weight or less based on the total of the monomer components.

而且，所述丙烯酸系聚合物為了交聯，亦可根據需要包 含多官能性單體等作為共聚合用單體成分。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、(甲基)丙烯酸胺基甲酸酯等。所述多官能性單體亦可使用1種或2種以上。就黏著特性等方面而言，多官能性單體的使用量較佳為全部單體成分的30重量%以下。 Moreover, the acrylic polymer may be packaged as needed for crosslinking. A polyfunctional monomer or the like is contained as a monomer component for copolymerization. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, (meth) acrylate urethane, and the like. The polyfunctional monomer may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total monomer component in terms of adhesion characteristics and the like.

所述丙烯酸系聚合物藉由將單一單體或2種以上的單體 混合物實施聚合而得。聚合亦可藉由溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等任一種方式進行。就防止對清潔的被黏接體的污染等方面而言，較佳為低分子量物質的含量小。就所述方面而言，丙烯酸系聚合物的數量平均分子量較佳為30萬以上、更佳為40萬~300萬左右。 The acrylic polymer is composed of a single monomer or two or more monomers The mixture is obtained by polymerization. The polymerization can also be carried out by any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. It is preferable that the content of the low molecular weight substance is small in terms of preventing contamination of the cleaned adherend or the like. In view of the above, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably 400,000 to 3,000,000.

另外，為了提高作為基礎聚合物的丙烯酸系聚合物等的 數量平均分子量，所述黏著劑中亦可適當採用外部交聯劑。作為外部交聯方法的具體的方法，可列舉：添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂的交聯劑並進行反應的方法。在使用外部交聯劑時，其使用量根據與應交聯的基礎聚合物的平衡，進而根據作為黏著劑的使用用途而適當 決定。通常，相對於所述基礎聚合物100重量份，較佳為調配5重量份左右以下、更佳為調配0.1重量份~5重量份。而且，在黏著劑中，根據需要，除了所述成分外，亦可使用先前公知的各種黏著賦予劑、抗老化劑等添加劑。 In addition, in order to improve the acrylic polymer or the like as the base polymer The number average molecular weight may be appropriately selected from the external crosslinking agent in the adhesive. A specific method of the external crosslinking method is a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent is added and reacted. When an external crosslinking agent is used, the amount thereof is used in accordance with the balance with the base polymer to be crosslinked, and further, depending on the use as the adhesive. Decide. In general, it is preferably about 5 parts by weight or less, more preferably 0.1 parts by weight to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, in the adhesive, if necessary, in addition to the above-mentioned components, various additives such as various adhesion-imparting agents and anti-aging agents known in the prior art may be used.

黏著劑層2可藉由放射線硬化型黏著劑而形成。放射線 硬化型黏著劑可藉由紫外線等放射線的照射而使交聯度增大，從而容易地降低其黏著力，並且藉由僅對與圖2所示的黏著劑層2的工件貼附部分對應的部分2a進行放射線照射，而設置與其他部分2b的黏著力的差。 The adhesive layer 2 can be formed by a radiation hardening type adhesive. radiation The hardening type adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays, thereby easily reducing the adhesion thereof, and by merely attaching the portion to the workpiece attached to the adhesive layer 2 shown in FIG. The portion 2a is irradiated with radiation, and the difference in adhesion to the other portion 2b is set.

另外，藉由根據圖2所示的晶粒接合膜3'使放射線硬化 型黏著劑層2硬化，而可容易地形成黏著力顯著降低的所述部分2a。由於在進行硬化、並且黏著力降低的所述部分2a貼附晶粒接合膜3'，因此黏著劑層2的所述部分2a與晶粒接合膜3'的界面具有在拾取時容易剝離的性質。另一方面，未照射放射線的部分具有充分的黏著力，並形成所述部分2b。 In addition, the radiation is hardened by the die bonding film 3' shown in FIG. The type of adhesive layer 2 is hardened, and the portion 2a in which the adhesion is remarkably lowered can be easily formed. Since the portion 2a which is hardened and the adhesion is lowered is attached to the die-bonding film 3', the interface between the portion 2a of the adhesive layer 2 and the die-bonding film 3' has a property of being easily peeled off at the time of picking up. . On the other hand, the portion where the radiation is not irradiated has a sufficient adhesive force, and the portion 2b is formed.

如上所述般，在圖1所示的帶切割帶的晶粒接合膜10 的黏著劑層2中，藉由未硬化的放射線硬化型黏著劑而形成的所述部分2b與晶粒接合膜3黏著，而可確保切割時的保持力。如此，放射線硬化型黏著劑可在黏接．剝離的平衡佳地情況下支撐用以將晶片狀工件(半導體晶片等)固著於基板等被黏接體的晶粒接合膜3。在圖2所示的帶切割帶的晶粒接合膜11的黏著劑層2中，所述部分2b可固定晶圓環。 As described above, the dicing tape-containing die-bonding film 10 shown in FIG. In the adhesive layer 2, the portion 2b formed by the uncured radiation-curable adhesive adheres to the die-bonding film 3, and the holding force at the time of cutting can be ensured. Thus, the radiation hardening adhesive can be bonded. In the case where the balance of the peeling is good, the wafer bonding film 3 for fixing the wafer-like workpiece (semiconductor wafer or the like) to the adherend such as the substrate is supported. In the adhesive layer 2 of the die-bonding film 11 with a dicing tape shown in Fig. 2, the portion 2b can fix the wafer ring.

放射線硬化型黏著劑可無特別限制地使用：具有碳-碳 雙鍵等放射線硬化性官能基、且表現出黏著性者。作為放射線硬化型黏著劑，例如可例示：在所述丙烯酸系黏著劑、橡膠系黏著劑等通常的壓感性黏著劑中，調配有放射線硬化性單體成分或寡聚物成分的添加型放射線硬化型黏著劑。 The radiation hardening adhesive can be used without any limitation: having carbon-carbon A radiation-hardening functional group such as a double bond, and exhibits adhesiveness. For example, the radiation-curable adhesive of the above-mentioned pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or the rubber-based pressure-sensitive adhesive may be added to the radiation-curable monomer component or the oligomer component. Type of adhesive.

作為所調配的放射線硬化性單體成分，例如可列舉：胺 基甲酸酯寡聚物、(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外，放射線硬化性寡聚物成分可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種寡聚物，適當的是其分子量為100~30000左右的範圍者。放射線硬化性單體成分或寡聚物成分的調配量，可根據所述黏著劑層的種類，而適當決定可降低黏著劑層的黏著力的量。通常，相對於構成黏著劑的丙烯酸系聚合物等基礎聚合物100重量份，例如為5重量份~500重量份、較佳為40重量份~150重量份左右。 Examples of the radiation curable monomer component to be blended include an amine. Carbamate oligomer, (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (methyl) Acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, etc. . In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and a molecular weight of 100 is suitable. ~30000 or so range. The amount of the radiation curable monomer component or the oligomer component can be appropriately determined depending on the type of the adhesive layer, and the amount of adhesion of the adhesive layer can be appropriately reduced. In general, it is, for example, 5 parts by weight to 500 parts by weight, preferably 40 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

另外，作為放射線硬化型黏著劑，除了所述說明的添加 型放射線硬化型黏著劑外，基礎聚合物可列舉：使用在聚合物側鏈或主鏈中或主鏈末端具有碳-碳雙鍵者的內在型放射線硬化型黏著劑。內在型放射線硬化型黏著劑無須含有或不大量含有作為低分子成分的寡聚物成分等，因此可在寡聚物成分等不經時地移 動至黏著劑在中的狀態下，形成穩定的層結構的黏著劑層，因此較佳。 In addition, as a radiation hardening type adhesive, in addition to the addition of the description In addition to the radiation curable adhesive, the base polymer may be an intrinsic type radiation curable adhesive which has a carbon-carbon double bond in a polymer side chain or a main chain or a main chain end. The intrinsic type radiation curable adhesive does not need to contain or contain a large amount of an oligomer component as a low molecular component, and thus can be moved in the absence of an oligomer component or the like. It is preferable to form an adhesive layer of a stable layer structure in a state where the adhesive is in the middle.

具有所述碳-碳雙鍵的基礎聚合物可無特別限制地使 用：具有碳-碳雙鍵、且具有黏著性者。作為此種基礎聚合物，較佳為將丙烯酸系聚合物作為基本骨架者。作為丙烯酸系聚合物的基本骨架，可列舉：所述例示的丙烯酸系聚合物。 The base polymer having the carbon-carbon double bond can be made without any limitation Use: those with carbon-carbon double bonds and adhesion. As such a base polymer, an acrylic polymer is preferred as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be the above-mentioned acrylic polymer.

在所述丙烯酸系聚合物中導入碳-碳雙鍵的方法並無特 別限制，可採用各種方法，但碳-碳雙鍵導入至聚合物側鏈的分子設計容易。例如可列舉如下的方法：預先在丙烯酸系聚合物中將具有官能基的單體進行共聚合後，使具有可與所述官能基反應的官能基及碳-碳雙鍵的化合物在維持碳-碳雙鍵的放射線硬化性的狀態下進行縮合或加成反應。 There is no special method for introducing a carbon-carbon double bond into the acrylic polymer. Other methods are not limited, but the molecular design of the carbon-carbon double bond introduced into the side chain of the polymer is easy. For example, a method in which a monomer having a functional group and a carbon-carbon double bond in which a functional group capable of reacting with the functional group is copolymerized in a copolymer of a functional group and a carbon-carbon double bond is maintained in the acrylic polymer The condensation or addition reaction is carried out in a state in which the carbon double bond is radiation-hardened.

作為所述官能基的組合的例子，可列舉：羧酸基與環氧 基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。所述官能基的組合中，就反應追蹤的容易性而言，較佳為羥基與異氰酸酯基的組合。另外，若為如藉由所述官能基的組合，而生成具有所述碳-碳雙鍵的丙烯酸系聚合物的組合，則官能基可存在於丙烯酸系聚合物與所述化合物的任一側，在所述較佳的組合中，較佳為丙烯酸系聚合物具有羥基、所述化合物具有異氰酸酯基的情形。此時，作為具有碳-碳雙鍵的異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。另外，作為丙烯酸系聚合物，可使用將 所述例示的含有羥基的單體或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二乙二醇單乙烯醚的醚系化合物等進行共聚合而得者。 Examples of the combination of the functional groups include a carboxylic acid group and an epoxy group. a group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. In the combination of the functional groups, a combination of a hydroxyl group and an isocyanate group is preferred in terms of ease of reaction tracking. Further, if a combination of acrylic polymers having the carbon-carbon double bond is formed by a combination of the functional groups, a functional group may be present on either side of the acrylic polymer and the compound In the preferred combination, it is preferred that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methyl propylene methoxyethyl isocyanate, m-isopropenyl-α, α-dimethyl benzyl. Isocyanate and the like. In addition, as an acrylic polymer, it can be used. The hydroxy group-containing monomer or the ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether is copolymerized.

所述內在型放射線硬化型黏著劑可單獨使用所述具有 碳-碳雙鍵的基礎聚合物(特別是丙烯酸系聚合物)，亦可在不使特性惡化的程度下調配所述放射線硬化性單體成分或寡聚物成分。放射線硬化性寡聚物成分等通常相對於基礎聚合物100重量份而為30重量份的範圍內，較佳為0重量份~10重量份的範圍。 The intrinsic type radiation hardening type adhesive can be used alone The base polymer (especially the acrylic polymer) having a carbon-carbon double bond may be blended with the radiation curable monomer component or the oligomer component to the extent that the properties are not deteriorated. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 parts by weight to 10 parts by weight, per 100 parts by weight of the base polymer.

所述放射線硬化型黏著劑在藉由紫外線等進行硬化時 含有光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1等苯乙酮系化合物；安息香乙醚、安息香異丙醚、大茴香偶姻甲醚等安息香醚系化合物；苄基二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯酮-1,1-丙烷二酮-2-(鄰乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯基苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；硫雜蒽酮、2-氯硫雜蒽酮、2-甲基硫雜蒽酮、2,4-二甲基硫雜蒽酮、異丙基硫雜蒽酮、2,4-二氯硫雜蒽酮、2,4-二乙基硫雜蒽酮、2,4-二異丙基硫雜蒽酮等硫雜蒽酮系化合物；樟腦醌；鹵化酮；醯基氧化膦；醯基磷酸酯等。光聚合起始劑的調配量相對於構成黏著劑的丙烯酸系聚合物等基礎聚合物 100重量份，例如為0.05重量份~20重量份左右。 The radiation-curable adhesive is hardened by ultraviolet rays or the like Contains a photopolymerization initiator. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone can be exemplified. , an α-keto alcohol compound such as 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylbenzene Ketone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropane-1 and other acetophenone-based compounds; benzoin a benzoin ether compound such as diethyl ether, benzoin isopropyl ether, fennel aceton methyl ether; a ketal compound such as benzyl dimethyl ketal; an aromatic sulfonium chloride compound such as 2-naphthalene sulfonium chloride; Photoactive lanthanide compounds such as keto-1,1-propanedione-2-(o-ethoxycarbonyl)anthracene; benzophenone, benzhydrylbenzoic acid, 3,3'-dimethyl-4- a benzophenone compound such as methoxybenzophenone; thioxanthone, 2-chlorothiazinone, 2-methylthiazinone, 2,4-dimethylthiaxanone, or different a thioxanthone compound such as propyl thioxanthone, 2,4-dichlorothiazinone, 2,4-diethylthiaxanone or 2,4-diisopropylthioxanthone; Camphor Acyl phosphine oxide; acyl phosphate. The amount of the photopolymerization initiator is adjusted relative to the base polymer such as the acrylic polymer constituting the adhesive. 100 parts by weight, for example, is from 0.05 part by weight to 20 parts by weight.

另外，作為放射線硬化型黏著劑，例如可列舉：日本專 利特開昭60-196956號公報所揭示的包含具有2個以上不飽和鍵的加成聚合性化合物、具有環氧基的烷氧基矽烷等光聚合性化合物、與羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽系化合物等光聚合起始劑的橡膠系黏著劑或丙烯酸系黏著劑等。 In addition, as a radiation hardening type adhesive, for example, a Japanese A photopolymerizable compound such as an addition polymerizable compound having two or more unsaturated bonds, an alkoxysilane having an epoxy group, a carbonyl compound, an organic sulfur compound, or the like, disclosed in Japanese Laid-Open Patent Publication No. 60-196956 A rubber-based adhesive or an acrylic-based adhesive which is a photopolymerization initiator such as a peroxide, an amine or a phosphonium salt compound.

在藉由放射線硬化型黏著劑形成黏著劑層2時，以黏著 劑層2中的所述部分2a的黏著力<其他部分2b的黏著力的方式，對黏著劑層2的一部分進行放射線照射。 When the adhesive layer 2 is formed by a radiation-curable adhesive, it is adhered The adhesion of the portion 2a in the agent layer 2 to the adhesion of the other portion 2b is such that a part of the adhesive layer 2 is irradiated with radiation.

作為在所述黏著劑層2上形成所述部分2a的方法，可 列舉：在支撐基材1上形成放射線硬化型黏著劑層2後，對所述部分2a部分地照射放射線使其硬化的方法。部分的放射線照射可經由形成與工件貼附部分3a以外的部分3b等對應的圖案的光罩而進行。另外，可列舉：成斑點狀地照射紫外線使其硬化的方法等。放射線硬化型黏著劑層2的形成可藉由以下方式進行：將設置於分隔件上者轉印至支撐基材1上。部分的放射線硬化亦可對設置於分隔件上的放射線硬化型黏著劑層2進行。 As a method of forming the portion 2a on the adhesive layer 2, A method in which the radiation hardening type adhesive layer 2 is formed on the support substrate 1 and the portion 2a is partially irradiated with radiation to be cured is exemplified. Part of the radiation irradiation can be performed via a photomask that forms a pattern corresponding to the portion 3b or the like other than the workpiece attaching portion 3a. Moreover, the method of irradiating ultraviolet rays in a spot shape, and hardening, etc. are mentioned. The formation of the radiation-curable adhesive layer 2 can be carried out by transferring the member provided on the separator to the support substrate 1. Part of the radiation hardening can also be performed on the radiation-curable adhesive layer 2 provided on the separator.

另外，在藉由放射線硬化型黏著劑形成黏著劑層2時， 可使用將支撐基材1的至少單面的與工件貼附部分3a對應的部分以外的部分的全部或一部分遮光者，在其上形成放射線硬化型黏著劑層2後進行放射線照射，使與工件貼附部分3a對應的部分硬化，而形成降低了黏著力的所述部分2a。作為遮光材料，可藉由 印刷或蒸鍍等製作在支撐膜上可成為光罩者。根據所述製造方法，可效率佳地製造本發明的帶切割帶的晶粒接合膜10。 Further, when the adhesive layer 2 is formed by a radiation-curable adhesive, It is possible to use all or a part of the light-shielding type adhesive layer 2 on the portion other than the portion corresponding to the workpiece attaching portion 3a of at least one side of the support substrate 1, and then irradiate the radiation to the workpiece. The portion corresponding to the attached portion 3a is hardened to form the portion 2a in which the adhesion is lowered. As a light-shielding material, Printing or vapor deposition, etc., can be used as a mask on the support film. According to the manufacturing method, the dicing tape-containing die-bonding film 10 of the present invention can be efficiently produced.

另外，在放射線照射時，在因氧氣引起硬化阻礙時，理 想為藉由某些方法將氧氣(空氣)自放射線硬化型黏著劑層2的表面阻擋。例如可列舉：藉由分隔件被覆所述黏著劑層2的表面的方法、或在氮氣環境中進行紫外線等放射線的照射的方法等。 In addition, when irradiated by radiation, when it is hardened by oxygen, it is reasonable. It is desirable to block oxygen (air) from the surface of the radiation-curable adhesive layer 2 by some methods. For example, a method of coating the surface of the adhesive layer 2 with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.

黏著劑層2的厚度並無特別限定，就兼顧防止晶片切斷 面的缺陷或保持黏接層的固定等方面而言，較佳為1μm~50μm左右。且較佳為2μm~30μm、更佳為5μm~25μm。 The thickness of the adhesive layer 2 is not particularly limited, and the wafer cutting is prevented. The surface defect or the fixing of the adhesive layer is preferably about 1 μm to 50 μm. It is preferably 2 μm to 30 μm, more preferably 5 μm to 25 μm.

<帶切割帶的晶粒接合膜的製造方法> <Method for Producing Grain Bonding Film with Cut Tape>

本實施形態的帶切割帶的晶粒接合膜10、帶切割帶的晶粒接合膜11，例如可藉由分別預先製作切割帶及晶粒接合膜，最後將所述進行貼合而製作。具體而言，可根據如以下的順序進行製作。 The die-bonding film 10 with a dicing tape and the die-bonding film 11 with a dicing tape of the present embodiment can be produced by, for example, separately preparing a dicing tape and a die-bonding film, and finally bonding the same. Specifically, it can be produced in the following order.

首先，基材1可藉由先前公知的製膜方法而製膜。作為 所述製膜方法，例如可例示：砑光機製膜法、在有機溶劑中的澆鑄法、密閉體系中的膨脹擠出法、T模擠出法、共擠出法、乾式積層(laminate)法等。 First, the substrate 1 can be formed into a film by a conventionally known film forming method. As The film forming method may, for example, be a calendering film method, a casting method in an organic solvent, an expansion extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, or a dry laminate method. Wait.

繼而，製備黏著劑層形成用黏著劑組成物。黏著劑組成 物中調配有如在黏著劑層的項中所說明的樹脂或添加物等。將所製備的黏著劑組成物塗佈於基材1上形成塗佈膜後，將所述塗佈膜在特定條件下進行乾燥(根據需要進行加熱交聯)，而形成黏著劑層2。作為塗佈方法，並無特別限定，例如可列舉：輥塗、絲網 塗敷、凹版塗敷等。另外，作為乾燥條件，例如在乾燥溫度為80℃~150℃、乾燥時間為0.5分鐘~5分鐘的範圍內進行。另外，在分隔件上塗佈黏著劑組成物形成塗佈膜後，可在所述乾燥條件下使塗佈膜乾燥而形成黏著劑層2。然後，將黏著劑層2與分隔件一起貼合於基材1上。藉此，製作具備基材1及黏著劑層2的切割帶。另外，作為切割帶，只要至少具備基材及黏著劑層即可，在具有分隔件等其他要素時，亦稱為切割帶。 Then, an adhesive composition for forming an adhesive layer was prepared. Adhesive composition The resin or the additive as described in the item of the adhesive layer is blended. After the prepared adhesive composition is applied onto the substrate 1 to form a coating film, the coating film is dried under specific conditions (heat-crosslinking as necessary) to form the adhesive layer 2. The coating method is not particularly limited, and examples thereof include roll coating and wire mesh. Coating, gravure coating, and the like. Further, the drying conditions are, for example, carried out in a range of a drying temperature of 80 ° C to 150 ° C and a drying time of 0.5 minutes to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film can be dried under the drying conditions to form the adhesive layer 2. Then, the adhesive layer 2 is attached to the substrate 1 together with the separator. Thereby, a dicing tape provided with the substrate 1 and the adhesive layer 2 was produced. Further, the dicing tape may be provided with at least a base material and an adhesive layer, and is also referred to as a dicing tape when it has other elements such as a separator.

晶粒接合膜3、晶粒接合膜3'例如以如下方式製作。首 先，製作作為晶粒接合膜3、晶粒接合膜3'的形成材料的黏接劑組成物。在所述黏接劑組成物中，如晶粒接合膜的項中所說明般，調配有熱塑性樹脂(a)、或25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)、各種添加劑等。 The die-bonding film 3 and the die-bonding film 3' are produced, for example, in the following manner. first First, an adhesive composition as a material for forming the grain bonding film 3 and the die bonding film 3' is produced. In the adhesive composition, as described in the item of the grain bonding film, the thermoplastic resin (a) is formulated, or the viscosity at 25 ° C is 0.1 Pa. Sec~50Pa. Seec thermosetting resin (b), various additives, and the like.

繼而，在基材分隔件上以成為特定厚度的方式塗佈所製 備的黏接劑組成物而形成塗佈膜後，將所述塗佈膜在特定條件下乾燥，而形成黏接劑層。作為塗佈方法，並無特別限定，例如可列舉：輥塗、絲網塗敷、凹版塗敷等。另外，作為乾燥條件，例如在乾燥溫度為70℃~160℃、乾燥時間為1分鐘~5分鐘的範圍內進行。另外，在分隔件上塗佈黏接劑組成物形成塗佈膜後，可在所述乾燥條件下使塗佈膜乾燥而形成黏接劑層。然後，將黏接劑層與分隔件一起貼合於基材分隔件上。另外，在本發明中，不僅包括晶粒接合膜單獨由黏接劑層形成的情形，而且亦包括由黏接劑層與分隔件等其他要素形成的情形。 Then, it is coated on the substrate separator to have a specific thickness. After the adhesive composition is prepared to form a coating film, the coating film is dried under specific conditions to form an adhesive layer. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are, for example, carried out in a range of a drying temperature of 70 ° C to 160 ° C and a drying time of 1 minute to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film can be dried under the drying conditions to form an adhesive layer. Then, the adhesive layer is attached to the substrate separator together with the separator. Further, in the present invention, not only the case where the die-bonding film is formed of the adhesive layer alone but also the other components such as the adhesive layer and the separator are included.

繼而，自晶粒接合膜3、晶粒接合膜3'及切割帶分別剝 離分隔件，以黏接劑層與黏著劑層成為貼合面的方式將兩者貼合。貼合例如可藉由壓接進行。此時，積層(laminate)溫度並無特別限定，例如較佳為30℃~50℃，更佳為35℃~45℃。另外，線壓並無特別限定，例如較佳為0.1kgf/cm~20kgf/cm，更佳為1kgf/cm~10kgf/cm。繼而，將黏接劑層上的基材分隔件剝離，而獲得本實施形態的帶切割帶的晶粒接合膜。 Then, stripping from the die-bonding film 3, the die-bonding film 3', and the dicing tape, respectively From the separator, the adhesive layer and the adhesive layer are bonded to each other to form a bonding surface. The bonding can be performed, for example, by crimping. In this case, the laminate temperature is not particularly limited, and is, for example, preferably 30 ° C to 50 ° C, more preferably 35 ° C to 45 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.1 kgf/cm to 20 kgf/cm, more preferably 1 kgf/cm to 10 kgf/cm. Then, the substrate separator on the adhesive layer was peeled off to obtain a die-bonding film with a dicing tape of the present embodiment.

<半導體裝置的製造方法> <Method of Manufacturing Semiconductor Device>

繼而，以下對使用本實施形態的帶切割帶的晶粒接合膜10的半導體裝置的製造方法進行說明。 Next, a method of manufacturing a semiconductor device using the die bond film 10 with a dicing tape of the present embodiment will be described below.

首先，如圖1所示般，在帶切割帶的晶粒接合膜10中 的黏接劑層3的半導體晶圓貼附部分3a上壓接半導體晶圓4，並將其進行黏接保持而固定(貼合步驟)。本步驟一邊藉由壓接輥等擠壓機構擠壓一邊進行。 First, as shown in FIG. 1, in the die-bonding film 10 with a dicing tape The semiconductor wafer 4 is pressure-bonded to the semiconductor wafer attaching portion 3a of the adhesive layer 3, and is adhered and fixed (bonding step). This step is carried out while being pressed by a pressing mechanism such as a pressure roller.

繼而，進行半導體晶圓4的切割。藉此，將半導體晶圓 4切割成特定尺寸而分離(separating)，而製造半導體晶片5(切割步驟)。切割例如自半導體晶圓4的電路面側根據常法進行。另外，在本步驟中，例如可採用：進行切入直至帶切割帶的晶粒接合膜10為止的被稱為全切(full cut)的切割方式等。作為本步驟中所用的切割裝置，並無特別限定，可使用先前公知者。另外，半導體晶圓藉由帶切割帶的晶粒接合膜10而黏接固定，因此可抑制晶片缺陷或晶片飛散，並且亦可抑制半導體晶圓4的破損。 Then, the dicing of the semiconductor wafer 4 is performed. In this way, the semiconductor wafer 4 Cutting into a specific size and separating, and manufacturing a semiconductor wafer 5 (cutting step). The cutting is performed, for example, from the circuit surface side of the semiconductor wafer 4 in accordance with a conventional method. In addition, in this step, for example, a cutting method called a full cut, which is performed until the die bonding film 10 with the dicing tape is cut, may be employed. The cutting device used in this step is not particularly limited, and those known in the prior art can be used. Further, since the semiconductor wafer is bonded and fixed by the die bond film 10 with the dicing tape, wafer defects or wafer scattering can be suppressed, and breakage of the semiconductor wafer 4 can be suppressed.

為了將黏接固定於帶切割帶的晶粒接合膜10的半導體 晶片剝離，而進行半導體晶片5的拾取(拾取步驟)。作為拾取的方法，並無特別限定，可採用先前公知的各種方法。例如可列舉：藉由針自帶切割帶的晶粒接合膜10側上頂各半導體晶片5，並藉由拾取裝置拾取經上頂的半導體晶片5的方法等。 a semiconductor for bonding the die to the die bond film 10 with a dicing tape The wafer is peeled off, and picking up of the semiconductor wafer 5 (pickup step) is performed. The method of picking up is not particularly limited, and various conventionally known methods can be employed. For example, a method in which the semiconductor wafers 5 are placed on the side of the die-bonding film 10 of the dicing tape by the needle, and the semiconductor wafer 5 which has been topped up by the pick-up device is picked up.

此處，在黏著劑層2為紫外線硬化型時，拾取是在對所 述黏著劑層2照射紫外線後進行。藉此，黏著劑層2對黏接劑層3a的黏著力降低，半導體晶片5的剝離變得容易。其結果可在不損傷半導體晶片的狀態下拾取。紫外線照射時的照射強度、照射時間等條件並無特別限定，只要根據需要適當進行設定即可。另外，作為紫外線照射所使用的光源，可使用所述者。 Here, when the adhesive layer 2 is of an ultraviolet curing type, the pickup is in the opposite place. The adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 2 to the adhesive layer 3a is lowered, and the peeling of the semiconductor wafer 5 becomes easy. As a result, it can be picked up without damaging the semiconductor wafer. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. Further, as the light source used for ultraviolet irradiation, the above may be used.

繼而，如圖3所示般，將藉由切割而形成的半導體晶片5經由晶粒接合膜3a而晶粒接合於被黏接體6(晶粒接合步驟)。作為被黏接體6，可列舉：導線架、捲帶式自動結合(Tape Automated Bonding，TAB)膜、基板或另外製作的半導體晶片等。被黏接體6例如可為如容易變形的變形型被黏接體，亦可為難以變形的非變形型被黏接體(半導體晶圓等)。 Then, as shown in FIG. 3, the semiconductor wafer 5 formed by dicing is die-bonded to the adherend 6 via the die bond film 3a (die bonding step). Examples of the adherend 6 include a lead frame, a Tape Automated Bonding (TAB) film, a substrate, or a separately fabricated semiconductor wafer. The adherend 6 may be, for example, a deformed adherend that is easily deformed, or a non-deformable adherend (semiconductor wafer or the like) that is difficult to deform.

作為所述基板，可使用先前公知者。另外，作為所述導線架，可使用：Cu導線架、42合金導線架等金屬導線架或包含環氧玻璃、BT(雙順丁烯二醯亞胺-三嗪)、聚醯亞胺等的有機基板。但是，本發明並不限定於此，亦包括：將半導體元件黏著、並可與半導體元件進行電性連接而使用的電路基板。 As the substrate, a previously known one can be used. In addition, as the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame or a glass containing epoxy glass, BT (bis-sandimidine-triazine), polyimine, or the like can be used. Organic substrate. However, the present invention is not limited thereto, and includes a circuit board that is used by adhering a semiconductor element and electrically connecting the semiconductor element.

晶粒接合藉由壓接進行。作為晶粒接合的條件，並無特 別限定，可根據需要進行適當設定。具體而言，例如可在晶粒接合溫度為80℃~160℃、接合壓力為5N~15N、接合時間為1秒鐘~10秒鐘的範圍內進行。 Grain bonding is performed by crimping. As a condition for die bonding, there is no special Not limited, it can be set as needed. Specifically, for example, the die bonding temperature is 80 to 160 ° C, the bonding pressure is 5 N to 15 N, and the bonding time is 1 to 10 seconds.

繼而，藉由對晶粒接合膜3a進行加熱處理而使其熱硬 化，而使半導體晶片5與被黏接體6黏接。作為加熱處理條件，較佳為溫度為80℃~180℃的範圍內，且加熱時間為0.1小時~24小時、較佳為0.1小時~4小時、更佳為0.1小時~1小時的範圍內。 Then, the die bonding film 3a is heat-hardened by heat treatment. The semiconductor wafer 5 is bonded to the bonded body 6. The heat treatment conditions are preferably in the range of 80 ° C to 180 ° C, and the heating time is in the range of 0.1 to 24 hours, preferably 0.1 to 4 hours, more preferably 0.1 to 1 hour.

繼而，藉由接合線7將被黏接體6的端子部(內部引線) 的前端與半導體晶片5上的電極焊墊(未圖示)進行電性連接(打線接合步驟)。作為所述接合線7，例如可使用金線、鋁線或銅線等。進行打線接合時的溫度在80℃~250℃、較佳為80℃~220℃的範圍內進行。另外，所述加熱時間進行數秒鐘~數分鐘。結線是在以成為所述溫度範圍內的方式進行加熱的狀態下，藉由併用利用超音波的振動能量(vibrational energy)與利用施加加壓的壓接能量而進行。 Then, the terminal portion (internal lead) of the bonded body 6 is bonded by the bonding wire 7. The front end is electrically connected to an electrode pad (not shown) on the semiconductor wafer 5 (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is carried out in the range of 80 ° C to 250 ° C, preferably 80 ° C to 220 ° C. In addition, the heating time is performed for several seconds to several minutes. The junction line is heated in a state in which the temperature is within the above-described temperature range, and the vibration energy by ultrasonic waves and the pressure contact energy by application of pressure are used in combination.

另外，打線接合步驟可在不藉由加熱處理使晶粒接合膜 3熱硬化的狀態下進行。此時，相對於被黏接體6，晶粒接合膜3a在25℃下的剪切黏接力較佳為0.2MPa以上，更佳為0.2MPa~10MPa。藉由將所述剪切黏接力設為0.2MPa以上，而即便在不使晶粒接合膜3a熱硬化的狀態下進行打線接合步驟，亦不會因所述步 驟中的超音波振動或加熱，而在晶粒接合膜3a與半導體晶片5或被黏接體6的黏接面產生剪切變形。即，半導體元件不會因打線接合時的超音波振動而變動，藉此防止打線接合的成功率降低。 In addition, the wire bonding step can be performed on the die bonding film without heat treatment. 3 is carried out in a state of heat hardening. At this time, the shear bonding strength of the die-bonding film 3a at 25 ° C with respect to the adherend 6 is preferably 0.2 MPa or more, more preferably 0.2 MPa to 10 MPa. By setting the shear adhesive force to 0.2 MPa or more, the wire bonding step is performed even in a state where the die bonding film 3a is not thermally cured, and the step is not caused by the step. Ultrasonic vibration or heating in the step causes shear deformation at the bonding surface of the die-bonding film 3a and the semiconductor wafer 5 or the bonded body 6. In other words, the semiconductor element does not fluctuate due to ultrasonic vibration during wire bonding, thereby preventing the success rate of the wire bonding from being lowered.

另外，未硬化的晶粒接合膜3a即便進行打線接合步驟， 亦不會完全熱硬化。而且，晶粒接合膜3a的剪切黏接力即便在80℃~250℃的溫度範圍內，亦需要0.2MPa以上。原因是，若在所述溫度範圍內剪切黏接力小於0.2MPa，則半導體元件會因打線接合時的超音波振動而變動，無法進行打線接合，而良率降低。 In addition, the uncured die-bonding film 3a is subjected to the wire bonding step, It will not be completely hardened. Further, the shear bonding strength of the die-bonding film 3a needs to be 0.2 MPa or more even in the temperature range of 80 ° C to 250 ° C. The reason is that if the shear adhesive strength is less than 0.2 MPa in the temperature range, the semiconductor element fluctuates due to ultrasonic vibration during wire bonding, and wire bonding cannot be performed, and the yield is lowered.

繼而，進行藉由密封樹脂8將半導體晶片5密封的密封 步驟。本步驟是為了保護搭載於被黏接體6的半導體晶片5或接合線7而進行。本步驟藉由利用模具將密封用樹脂成型而進行。 作為密封樹脂8，例如使用環氧系樹脂。樹脂密封時的加熱溫度通常在175℃下進行60秒鐘~90秒鐘，但本發明並不限定於此，例如可在165℃~185℃下進行數分鐘硬化。藉此，使密封樹脂硬化，並且在晶粒接合膜3a未熱硬化時亦使所述晶粒接合膜3a熱硬化。即，本發明中，在未進行後述的後硬化步驟時，亦可在本步驟中使晶粒接合膜3a熱硬化而黏接，並可有助於減少製造步驟數及縮短半導體裝置的製造時間。 Then, sealing of the semiconductor wafer 5 by the sealing resin 8 is performed. step. This step is performed to protect the semiconductor wafer 5 or the bonding wires 7 mounted on the adherend 6 . This step is carried out by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually carried out at 175 ° C for 60 seconds to 90 seconds, but the present invention is not limited thereto, and for example, it can be cured at 165 ° C to 185 ° C for several minutes. Thereby, the sealing resin is cured, and the crystal grain bonding film 3a is also thermally cured even when the crystal grain bonding film 3a is not thermally cured. In other words, in the present invention, when the post-hardening step to be described later is not performed, the die-bonding film 3a can be thermally cured and bonded in this step, and the number of manufacturing steps can be reduced and the manufacturing time of the semiconductor device can be shortened. .

在所述後硬化步驟中，藉由所述密封步驟使硬化不足的 密封樹脂8完全硬化。在密封步驟中，未將晶粒接合膜3a熱硬化時，可在本步驟中與密封樹脂8的硬化一起使晶粒接合膜3a熱硬化而實現黏接固定。本步驟中的加熱溫度因密封樹脂的種類而不 同，例如為165℃~185℃的範圍內，加熱時間為0.5小時~8小時左右。 In the post-hardening step, the hardening is insufficient by the sealing step The sealing resin 8 is completely hardened. In the sealing step, when the die-bonding film 3a is not thermally cured, the die-bonding film 3a can be thermally cured together with the curing of the sealing resin 8 in this step to achieve adhesive bonding. The heating temperature in this step is not due to the type of sealing resin Similarly, for example, in the range of 165 ° C to 185 ° C, the heating time is about 0.5 to 8 hours.

另外，本發明的帶切割帶的晶粒接合膜如圖4所示般，亦可較佳地用於將多個半導體晶片積層而進行三維封裝的情形。圖4是表示經由晶粒接合膜將半導體晶片進行三維封裝的例子的剖面示意圖。在圖4所示的三維封裝時，首先，將以成為與半導體晶片相同尺寸的方式切出的至少1個晶粒接合膜3a貼附於被黏接體6上後，經由晶粒接合膜3a，將半導體晶片5以其打線接合面成為上側的方式進行晶粒接合。繼而，避開半導體晶片5的電極焊墊部分而貼附晶粒接合膜13。繼而，在晶粒接合膜13上將其他半導體晶片15以其打線接合面成為上側的方式進行晶粒接合。然後，藉由將晶粒接合膜3a、晶粒接合膜13進行加熱，而進行熱硬化而黏接固定，並提高耐熱強度。作為加熱條件，與所述同樣，較佳為溫度為80℃~200℃的範圍內，且加熱時間為0.1小時~24小時的範圍內。 Further, as shown in FIG. 4, the die-bonding film with a dicing tape of the present invention can also be preferably used in a case where a plurality of semiconductor wafers are laminated and three-dimensionally packaged. 4 is a schematic cross-sectional view showing an example in which a semiconductor wafer is three-dimensionally packaged through a die bond film. In the three-dimensional packaging shown in FIG. 4, at least one die bonding film 3a cut out in the same size as the semiconductor wafer is attached to the adherend 6 and then passed through the die bonding film 3a. The semiconductor wafer 5 is die-bonded so that the wire bonding surface thereof is on the upper side. Then, the die bond film 13 is attached by avoiding the electrode pad portion of the semiconductor wafer 5. Then, the other semiconductor wafer 15 is bonded to the die bonding film 13 so that the wire bonding surface thereof is on the upper side. Then, the die-bonding film 3a and the die-bonding film 13 are heated to be thermally cured to be bonded and fixed, and the heat resistance is improved. The heating conditions are preferably in the range of 80 ° C to 200 ° C in the same manner as described above, and the heating time is in the range of 0.1 to 24 hours.

另外，在本發明中，亦可不將晶粒接合膜3a、晶粒接合膜13進行熱硬化，而僅進行晶粒接合。然後，亦可在不經過加熱步驟的狀態下進行打線接合，繼而藉由密封樹脂將半導體晶片密封，而將所述密封樹脂進行後硬化(after cure)。 Further, in the present invention, the crystal grain bonding film 3a and the die bonding film 13 may not be thermally cured, and only the die bonding may be performed. Then, the sealing resin may be post-cured by performing wire bonding without a heating step, and then sealing the semiconductor wafer with a sealing resin.

繼而，進行打線接合步驟。藉此，藉由接合線7將半導體晶片5及其他半導體晶片15中的各電極焊墊、與被黏接體6進行電性連接。另外，本步驟在不經過晶粒接合膜3a、晶粒接合膜 13的加熱步驟的狀態下實施。 Then, a wire bonding step is performed. Thereby, the electrode pads of the semiconductor wafer 5 and the other semiconductor wafers 15 are electrically connected to the adherend 6 by the bonding wires 7. In addition, this step does not pass through the grain bonding film 3a, the die bonding film The heating step of 13 is carried out.

繼而，進行藉由密封樹脂8將半導體晶片5等密封的密 封步驟，而使密封樹脂硬化。與此同時，在未進行熱硬化時，藉由晶粒接合膜3a的熱硬化而將被黏接體6與半導體晶片5之間進行黏接固定。另外，藉由晶粒接合膜13的熱硬化，而亦將半導體晶片5與其他半導體晶片15之間進行黏接固定。另外，在密封步驟後，可進行後硬化步驟。 Then, the semiconductor wafer 5 and the like are sealed by the sealing resin 8 The sealing step is performed to harden the sealing resin. At the same time, when the thermal curing is not performed, the bonded body 6 and the semiconductor wafer 5 are bonded and fixed by thermal curing of the die-bonding film 3a. Further, the semiconductor wafer 5 and the other semiconductor wafers 15 are bonded and fixed by thermal curing of the die-bonding film 13. Additionally, a post-hardening step can be performed after the sealing step.

在半導體晶片的三維封裝時，由於不進行藉由晶粒接合 膜3a、晶粒接合膜13的加熱的加熱處理，因此可謀求製造步驟的簡化及良率的提高。另外，由於亦不會在被黏接體6上產生翹曲、或在半導體晶片5及其他半導體晶片15上產生龜裂，因此可實現半導體元件的進一步的薄型化。 In the three-dimensional packaging of a semiconductor wafer, since die bonding is not performed Since the heat treatment of the heating of the film 3a and the die-bonding film 13 is performed, the simplification of the manufacturing process and the improvement of the yield can be achieved. Further, since warpage does not occur in the adherend 6 or cracks are generated in the semiconductor wafer 5 and the other semiconductor wafer 15, further thinning of the semiconductor element can be achieved.

另外，如圖5所示般，可實現在半導體晶片間經由晶粒 接合膜而積層間隔件的三維封裝。圖5是表示經由間隔件藉由晶粒接合膜將2個半導體晶片進行三維封裝的例子的剖面示意圖。 In addition, as shown in FIG. 5, it is possible to pass through the die between the semiconductor wafers. The film is bonded to form a three-dimensional package of spacers. 5 is a schematic cross-sectional view showing an example in which two semiconductor wafers are three-dimensionally packaged by a die bond film via a spacer.

在為圖5所示的三維封裝時，首先，在被黏接體6上依 序積層晶粒接合膜3a、半導體晶片5及晶粒接合膜21而進行晶粒接合。繼而，在晶粒接合膜21上，依序積層間隔件9、晶粒接合膜21、晶粒接合膜3a及半導體晶片5而進行晶粒接合。然後，藉由將晶粒接合膜3a、晶粒接合膜21加熱而進行熱硬化而黏接固定，並提高耐熱強度。作為加熱條件，與所述同樣，較佳為溫度為80℃~200℃的範圍內，且加熱時間為0.1小時~24小時的範圍 內。 In the three-dimensional package shown in FIG. 5, first, on the bonded body 6, The grain bonding film 3a, the semiconductor wafer 5, and the die bonding film 21 are sequentially laminated to perform die bonding. Then, on the die-bonding film 21, the spacers 9, the die-bonding film 21, the die-bonding film 3a, and the semiconductor wafer 5 are sequentially laminated to perform die bonding. Then, the die-bonding film 3a and the die-bonding film 21 are heated and thermally cured to be bonded and fixed, and the heat resistance is improved. As the heating conditions, as described above, the temperature is preferably in the range of 80 ° C to 200 ° C, and the heating time is in the range of 0.1 to 24 hours. Inside.

另外，在本發明中，亦可不使晶粒接合膜3a、晶粒接合 膜21熱硬化而僅進行晶粒接合。然後，亦可在不經過加熱步驟的狀態下進行打線接合，繼而藉由密封樹脂將半導體晶片密封，而將所述密封樹脂後硬化。 Further, in the present invention, the die bonding film 3a and the die bonding may not be caused. The film 21 is thermally hardened and only grain bonding is performed. Then, the wire bonding may be performed without a heating step, and then the semiconductor wafer is sealed by a sealing resin, and the sealing resin is post-hardened.

繼而，如圖5所示般，進行打線接合步驟。藉此，藉由 接合線7將半導體晶片5中的電極焊墊與被黏接體6進行電性連接。另外，本步驟是在不經過晶粒接合膜3a、晶粒接合膜21的加熱步驟的狀態下實施。 Then, as shown in FIG. 5, a wire bonding step is performed. In this way, by The bonding wires 7 electrically connect the electrode pads in the semiconductor wafer 5 to the bonded body 6. In addition, this step is carried out in a state where the heating process of the die bond film 3a and the die bond film 21 is not performed.

繼而，進行藉由密封樹脂8將半導體晶片5密封的密封 步驟，使密封樹脂8硬化，並且在晶粒接合膜3a、晶粒接合膜21未硬化時，藉由使所述晶粒接合膜進行熱硬化，而使被黏接體6與半導體晶片5之間、及半導體晶片5與間隔件9之間進行黏接固定。藉此，獲得半導體封裝體。密封步驟較佳為僅對半導體晶片5側進行單面密封的一次性密封法。密封是為了保護貼附於黏著片上的半導體晶片5而進行，作為其方法，代表性的是使用密封樹脂8在模具中進行成型。此時，通常使用具有多個模腔(cavity)的包含上模具與下模具的模具，同時進行密封步驟。樹脂密封時的加熱溫度例如較佳為170℃~180℃的範圍內。密封步驟後，亦可進行後硬化步驟。 Then, sealing of the semiconductor wafer 5 by the sealing resin 8 is performed. In the step, the sealing resin 8 is hardened, and when the die-bonding film 3a and the die-bonding film 21 are not cured, the bonded body 6 and the semiconductor wafer 5 are made by thermally hardening the die-bonding film. The semiconductor wafer 5 and the spacer 9 are bonded and fixed. Thereby, a semiconductor package is obtained. The sealing step is preferably a one-time sealing method in which only one side of the semiconductor wafer 5 is sealed. The sealing is performed to protect the semiconductor wafer 5 attached to the adhesive sheet, and as a method thereof, it is representative that the sealing resin 8 is used for molding in a mold. At this time, a mold including an upper mold and a lower mold having a plurality of cavities is usually used while performing a sealing step. The heating temperature at the time of resin sealing is, for example, preferably in the range of 170 ° C to 180 ° C. After the sealing step, a post-hardening step can also be performed.

另外，作為所述間隔件9，並無特別限定，例如可使用 先前公知的矽晶片、聚醯亞胺膜等。另外，亦可使用核心材料作 為所述間隔件。作為核心材料，並無特別限定，可使用先前公知者。具體而言，可使用：膜(例如聚醯亞胺膜、聚酯膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、藉由玻璃纖維或塑膠製不織布(nonwoven)纖維強化的樹脂基板、鏡面矽晶圓、矽基板或玻璃被黏接體。 Further, the spacer 9 is not particularly limited and can be used, for example. Previously known germanium wafers, polyimide films, and the like. In addition, core materials can also be used. Is the spacer. The core material is not particularly limited, and those previously known can be used. Specifically, a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, or the like) can be used, and a glass fiber can be used. Or a non-woven fiber-reinforced resin substrate, a mirror-finished wafer, a tantalum substrate, or a glass-bonded body.

(其他事項) (something else)

在所述被黏接體上將半導體元件進行三維封裝時，在半導體元件的形成電路的面側，形成緩衝塗佈膜。作為所述緩衝塗佈膜，例如可列舉：氮化矽膜或包含聚醯亞胺樹脂等耐熱樹脂者。 When the semiconductor element is three-dimensionally packaged on the adherend, a buffer coating film is formed on the surface side of the semiconductor element on which the circuit is formed. Examples of the buffer coating film include a tantalum nitride film or a heat resistant resin such as a polyimide resin.

另外，在半導體元件的三維封裝時，各階段所使用的晶粒接合膜並不限定於包含相同組成者，可根據製造條件或用途等進行適當變更。 In addition, in the three-dimensional encapsulation of the semiconductor element, the die-bonding film used in each stage is not limited to the one containing the same component, and can be appropriately changed according to the manufacturing conditions, use, and the like.

另外，在所述實施形態中所說明的積層方法僅為例示，且可根據需要進行適當變更。例如在參照圖4進行說明的半導體裝置的製造方法中，亦可藉由參照圖5進行說明的積層方法來積層第3階段以後的半導體元件。 In addition, the lamination method described in the above embodiment is merely an example, and can be appropriately changed as needed. For example, in the method of manufacturing a semiconductor device described with reference to FIG. 4, the semiconductor element after the third stage can be laminated by the layering method described with reference to FIG.

另外，在所述實施形態中，對在被黏接體上積層多個半導體元件後，一次性進行打線接合步驟的形態進行了闡述，但本發明並不限定於此。例如，亦可在將半導體元件積層於被黏接體上時進行打線接合步驟。 Further, in the above-described embodiment, the configuration in which the plurality of semiconductor elements are laminated on the adherend and the wire bonding step is performed once is described, but the present invention is not limited thereto. For example, the wire bonding step may be performed when the semiconductor element is laminated on the adherend.

[實施例] [Examples]

以下，對本發明的較佳的實施例進行例示性詳細地說 明。但所述實施例所記載的材料或調配量等只要無特別限定性的記載，則並非旨在將本發明的範圍僅限定於所述材料或調配量等，只不過為單純的說明例。另外，份是指重量份。 Hereinafter, an exemplary embodiment of the present invention will be described in detail by way of example. Bright. However, the materials, the blending amounts, and the like described in the above examples are not intended to limit the scope of the present invention to the materials, the blending amounts, and the like, and are merely illustrative examples, unless otherwise specified. In addition, parts mean parts by weight.

<切割帶的製作> <Production of dicing tape>

在具備冷卻管、氮氣導入管、溫度計及攪拌裝置的反應容器中，加入丙烯酸2-乙基己酯(以下稱為「2EHA」)82.1份、丙烯酸-2-羥基乙酯(以下稱為「HEA」)13.2份、過氧化苯甲醯基0.2份及甲苯67份，在氮氣流中在60℃下進行6小時聚合處理，而獲得丙烯酸系聚合物A。 In a reaction vessel equipped with a cooling tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 82.1 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") and 2-hydroxyethyl acrylate (hereinafter referred to as "HEA") were added. ”13.2 parts, 0.2 parts of benzamidine peroxide and 67 parts of toluene were subjected to a polymerization treatment at 60° C. for 6 hours in a nitrogen stream to obtain an acrylic polymer A.

在所述丙烯酸系聚合物A中添加2-甲基丙烯醯氧基乙基異氰酸酯(以下稱為「MOI」)11份，在空氣流中在50℃下進行48小時加成反應處理，而獲得丙烯酸系聚合物A'。 11 parts of 2-methacryloxyethyl isocyanate (hereinafter referred to as "MOI") was added to the acrylic polymer A, and an addition reaction treatment was carried out at 50 ° C for 48 hours in an air stream. Acrylic polymer A'.

繼而，相對於丙烯酸系聚合物A'100份，而添加聚異氰酸酯化合物(商品名「Coronate L」、日本聚胺酯(Nippon Polyurethane)(股)製造)8份、及光聚合起始劑(商品名「Irgacure651」、汽巴精化(Ciba Specialty Chemicals)公司製造)5份，而製作黏著劑溶液。 Then, 8 parts of a polyisocyanate compound (trade name "Coronate L", Nippon Polyurethane (manufactured by Nippon Co., Ltd.)) and a photopolymerization initiator (trade name) were added to 100 parts of the acrylic polymer A'. Five parts of Irgacure 651 and Ciba Specialty Chemicals were used to prepare an adhesive solution.

將所述製備的黏著劑溶液塗佈於PET剝離襯墊的實施了矽酮處理的面上，在120℃下進行2分鐘加熱交聯，而形成厚度為10μm的黏著劑層。繼而，在所述黏著劑層面上，貼合厚度為100μm的聚烯烴膜。然後，在50℃下保存24小時後，製作切割帶A。 The prepared adhesive solution was applied onto the surface of the PET release liner on which the anthrone treatment was carried out, and heat-crosslinked at 120 ° C for 2 minutes to form an adhesive layer having a thickness of 10 μm. Then, a polyolefin film having a thickness of 100 μm was attached to the adhesive layer. Then, after storing at 50 ° C for 24 hours, a dicing tape A was produced.

(實施例1) (Example 1)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(Nagase ChemteX)(股)製造、SG-P3)100份、作為熱硬化性樹脂(b)的(明和化成(股)製造、MEH-8000-4L)70份、環氧樹脂(大日本油墨化學(Dainippon Ink and Chemicals，DIC)製造、HP-4700)15份、及球狀二氧化矽(亞都馬特(Admatechs)(股)製造、SO-25R)30份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。另外，明和化成(股)製造、MEH-8000-4L為在鄰位具有烯丙基的熱硬化性樹脂。即，MEH-8000-4L相當於化學式(1)的R1中的烯丙基的數量與H的數量的比例(烯丙基的數量)：(H的數量)為1：3的情形。MEH-8000-4L的重量平均分子量為400。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Co., Ltd., SG-P3) as a thermoplastic resin (a), and as a thermosetting resin (b) 70 parts of MEH-8000-4L, epoxy resin (Dainippon Ink and Chemicals, DIC, HP-4700), 15 parts, and spherical cerium oxide (Admatechs) 30 parts of (manufactured by the company), SO-25R) was dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight. In addition, it is manufactured by Megumi Kasei Co., Ltd., and MEH-8000-4L is a thermosetting resin having an allyl group in the ortho position. That is, MEH-8000-4L corresponds to a ratio of the number of allyl groups in R 1 of the chemical formula (1) to the number of H (the number of allyl groups): (the number of H) is 1:3. MEH-8000-4L has a weight average molecular weight of 400.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜A。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a die-bonding film A having a thickness of 25 μm.

將所述晶粒接合膜A轉印至所述切割帶A中的黏著劑層側，而獲得本實施例的帶切割帶的晶粒接合膜A。 The die-bonding film A was transferred to the side of the adhesive layer in the dicing tape A to obtain the die-bonding film A of the present embodiment.

(實施例2) (Example 2)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(股)製造、SG-P3)100份、作為熱硬化性樹脂(b)的(明和化成(股)製造、MEH-8015)30份、環氧樹脂(DIC製 造、HP-4700)10份、及球狀二氧化矽(亞都馬特(股)製造、SO-25R)150份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。另外，明和化成(股)製造、MEH-8000H為在鄰位具有烯丙基的熱硬化性樹脂。即，MEH-8000H相當於化學式(1)的R1中的烯丙基的數量與H的數量的比例(烯丙基的數量)：(H的數量)為1：3的情形。MEH-8000H的重量平均分子量為510。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-P3) as a thermoplastic resin (a), and a thermosetting resin (b) (manufactured by Minghe Chemical Co., Ltd.) 30 parts of MEH-8015), 10 parts of epoxy resin (manufactured by DIC, HP-4700), and 150 parts of spherical cerium oxide (manufactured by Radtart), dissolved in methyl ethyl ketone And the concentration was adjusted to 23.6% by weight. In addition, it is manufactured by Megumi Kasei Co., Ltd., and MEH-8000H is a thermosetting resin having an allyl group in the ortho position. That is, MEH-8000H corresponds to a ratio of the number of allyl groups in R 1 of the chemical formula (1) to the number of H (the number of allyl groups): (the number of H) is 1:3. MEH-8000H has a weight average molecular weight of 510.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜B。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a grain bonded film B having a thickness of 25 μm.

將所述晶粒接合膜B轉印至所述切割帶A中的黏著劑層側，而獲得本實施例的帶切割帶的晶粒接合膜B。 The die-bonding film B is transferred to the side of the adhesive layer in the dicing tape A, and the dicing tape-containing die-bonding film B of the present embodiment is obtained.

(實施例3) (Example 3)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(股)製造、SG-P3)100份、與作為熱硬化性樹脂(b)的(明和化成(股)製造、MEH-8000-4L)1.5份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-P3) as a thermoplastic resin (a), and (manufactured by Megumi Chemical Co., Ltd.) as a thermosetting resin (b) 1.5 parts of MEH-8000-4L) was dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜C。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a grain bonded film C having a thickness of 25 μm.

將所述晶粒接合膜C轉印至所述切割帶A中的黏著劑層側， 而獲得本實施例的帶切割帶的晶粒接合膜C。 Transferring the die-bonding film C to the side of the adhesive layer in the dicing tape A, The die-bonding film C with a dicing tape of this example was obtained.

(實施例4) (Example 4)

將作為熱塑性樹脂(a)的含有羧基的丙烯酸系共聚物(長瀨化成(股)製造、SG-708-6)100份、作為熱硬化性樹脂(b)的(明和化成(股)製造、MEH-8000-4L)1.5份、及環氧樹脂(DIC製造、HP-4700)1.5份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。 100 parts of a carboxyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-708-6) as a thermoplastic resin (a), and a thermosetting resin (b) (manufactured by Megumi Chemical Co., Ltd.) 1.5 parts of MEH-8000-4L) and 1.5 parts of epoxy resin (manufactured by DIC, HP-4700) were dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜D。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a die-bonding film D having a thickness of 25 μm.

將所述晶粒接合膜D轉印至所述切割帶A中的黏著劑層側，而獲得本實施例的帶切割帶的晶粒接合膜D。 The die-bonding film D was transferred to the side of the adhesive layer in the dicing tape A, and the die-bonding film D of the dicing tape of the present embodiment was obtained.

(實施例5) (Example 5)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(股)製造、SG-P3)100份、作為熱硬化性樹脂(b)的(三菱化學(股)製造、828XA)1.5份、及環氧樹脂(DIC製造、HP-4700)1.5份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。另外，三菱化學(股)製造、828XA為雙酚A型環氧樹脂。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-P3) as a thermoplastic resin (a), and a thermosetting resin (b) (manufactured by Mitsubishi Chemical Corporation) 1.5 parts of 828XA) and 1.5 parts of epoxy resin (manufactured by DIC, HP-4700) were dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight. In addition, Mitsubishi Chemical Co., Ltd. manufactures 828XA as a bisphenol A type epoxy resin.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理 膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜E。 Applying the solution of the adhesive composition to a release coating of a polyethylene terephthalate film having a thickness of 50 μm as a release liner by an anthraquinone release treatment After the film was formed, it was dried at 130 ° C for 2 minutes to prepare a die-bonding film E having a thickness of 25 μm.

將所述晶粒接合膜E轉印至所述切割帶A中的黏著劑層側，而獲得本實施例的帶切割帶的晶粒接合膜E。 The die-bonding film E was transferred to the side of the adhesive layer in the dicing tape A to obtain the die-bonding film E of the dicing tape of the present embodiment.

(比較例1) (Comparative Example 1)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(股)製造、SG-P3)100份、與作為熱硬化性樹脂(b)的(明和化成(股)製造、HF-1M)1.5份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。另外，明和化成(股)製造、HF-1M式為通常的固體酚醛清漆型酚樹脂。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-P3) as a thermoplastic resin (a), and (manufactured by Megumi Chemical Co., Ltd.) as a thermosetting resin (b) 1.5 parts of HF-1M) was dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight. In addition, Minghe Chemical Co., Ltd. manufactures HF-1M type as a normal solid novolac type phenol resin.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜F。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a die-bonding film F having a thickness of 25 μm.

將所述晶粒接合膜F轉印至所述切割帶A中的黏著劑層側，而獲得本比較例的帶切割帶的晶粒接合膜F。 The die-bonding film F was transferred to the side of the adhesive layer in the dicing tape A to obtain the die-bonding film F of the comparative example.

(比較例2) (Comparative Example 2)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(股)製造、SG-P3)100份、作為熱硬化性樹脂(b)的(明和化成(股)製造、HF-1M)90份、及環氧樹脂(DIC製造、HP-4700)90份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-P3) as a thermoplastic resin (a), and a thermosetting resin (b) (manufactured by Minghe Chemical Co., Ltd.) 90 parts of HF-1M) and 90 parts of epoxy resin (manufactured by DIC, HP-4700) were dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜G。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a grain bonded film G having a thickness of 25 μm.

將所述晶粒接合膜G轉印至所述切割帶A中的黏著劑層側，而獲得本比較例的帶切割帶的晶粒接合膜G。 The die-bonding film G was transferred to the side of the adhesive layer in the dicing tape A, and the dicing tape-containing die-bonding film G of this comparative example was obtained.

(比較例3) (Comparative Example 3)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(股)製造、SG-P3)100份、與作為熱硬化性樹脂(b)的(明和化成(股)製造、MEH-8000-4L)1份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-P3) as a thermoplastic resin (a), and (manufactured by Megumi Chemical Co., Ltd.) as a thermosetting resin (b) One part of MEH-8000-4L) was dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜H。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a grain bonded film H having a thickness of 25 μm.

將所述晶粒接合膜H轉印至所述切割帶A中的黏著劑層側，而獲得本比較例的帶切割帶的晶粒接合膜H。 The die-bonding film H was transferred to the side of the adhesive layer in the dicing tape A to obtain the die-bonding film H of the comparative example.

(比較例4) (Comparative Example 4)

將作為熱塑性樹脂(a)的含有縮水甘油基的丙烯酸系共聚物(長瀨化成(股)製造、SG-P3)100份、與作為熱硬化性樹脂(b)的(明和化成(股)製造、MEH-8000-4L)120份溶解於甲基乙基酮中，而將濃度調整為23.6重量%。 100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase Chemical Co., Ltd., SG-P3) as a thermoplastic resin (a), and (manufactured by Megumi Chemical Co., Ltd.) as a thermosetting resin (b) 120 parts of MEH-8000-4L) was dissolved in methyl ethyl ketone, and the concentration was adjusted to 23.6% by weight.

將所述黏接劑組成物的溶液塗佈於作為剝離襯墊的經矽酮脫模處理的厚度為50μm的包含聚對苯二甲酸乙二酯膜的脫模處理膜上後，在130℃下進行2分鐘乾燥，藉此製作厚度為25μm的晶粒接合膜I。 The solution of the adhesive composition was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm which was subjected to a ketone release treatment as a release liner, at 130 ° C. The film was dried for 2 minutes to prepare a die-bonding film I having a thickness of 25 μm.

將所述晶粒接合膜I轉印至所述切割帶A中的黏著劑層側，而獲得本比較例的帶切割帶的晶粒接合膜I。 The die-bonding film I was transferred to the side of the adhesive layer in the dicing tape A to obtain the die-bonding film I of the comparative tape of the comparative example.

(熱硬化性樹脂(b)在25℃下的黏度測定) (Measurement of viscosity of thermosetting resin (b) at 25 ° C)

對實施例、比較例中所用的熱硬化性樹脂(b)，使用黏度計(RE80U(東機產業(股)製造))，使用轉子線(rotor cord)No.1進行測定。測定條件如下所述。將結果表示於表1、表2。 The thermosetting resin (b) used in the examples and the comparative examples was measured using a viscometer (RE80U (manufactured by Toki Sangyo Co., Ltd.)) using a rotor cord No. 1. The measurement conditions are as follows. The results are shown in Tables 1 and 2.

測定時間：5分鐘 Measurement time: 5 minutes

轉速：實施例1~實施例4、比較例3、及比較例4為20rpm Rotational speed: Example 1 to Example 4, Comparative Example 3, and Comparative Example 4 were 20 rpm.

實施例5為4rpm Example 5 is 4 rpm

(晶粒接合膜在5℃下的斷裂伸長率測定) (Measurement of elongation at break of grain bonded film at 5 ° C)

將實施例、比較例中所製作的晶粒接合膜製成厚度為200μm、寬度為10mm的短條狀。繼而，使用拉伸試驗機(滕喜龍(Tensilon)、島津製作所公司製造)，以拉伸速度為0.5mm/分鐘、夾頭間距離為20mm進行測定。斷裂伸長率藉由下述式算出。將結果表示於表1、表2。 The die-bonding film produced in the examples and the comparative examples was formed into a strip shape having a thickness of 200 μm and a width of 10 mm. Then, using a tensile tester (Tensilon, manufactured by Shimadzu Corporation), the measurement was carried out at a tensile speed of 0.5 mm/min and a distance between the chucks of 20 mm. The elongation at break was calculated by the following formula. The results are shown in Tables 1 and 2.

斷裂伸長率(%)=(((斷裂時的夾頭間長度(mm))-20)/20)×100 Elongation at break (%) = (((length between chucks at break (mm)) -20) / 20) × 100

(儲存彈性模數的測定) (Measurement of storage elastic modulus)

將實施例、比較例中所製作的晶粒接合膜在170℃下進行1小時加熱硬化。然後，製成厚度為200μm、寬度為10mm的短條狀。繼而，使用固體黏彈性測定裝置(RSA(III)、流變科學(Rheometric Scientific)公司製造)，在頻率為1Hz、升溫速度為10℃/min的條件下測定-50℃~300℃下的儲存彈性模數。將此時的在260℃下的儲存彈性模數表示於表1、表2。 The die-bonding films produced in the examples and the comparative examples were heat-cured at 170 ° C for 1 hour. Then, a strip having a thickness of 200 μm and a width of 10 mm was formed. Then, using a solid viscoelasticity measuring apparatus (RSA (III), Rheometric Scientific), the storage at -50 ° C to 300 ° C was measured at a frequency of 1 Hz and a temperature increase rate of 10 ° C / min. Elastic modulus. The storage elastic modulus at 260 ° C at this time is shown in Tables 1 and 2.

(密封步驟後的氣泡(空隙)消失性1) (The bubble (void) disappearance after the sealing step 1)

將各實施例及比較例中所得的晶粒接合膜在60℃下貼附於9.5mm見方的鏡面晶片上，在溫度為120℃、壓力為0.1MPa、時間為1s的條件下接合於球柵陣列(Ball Grid Array，BGA)基板。將其進一步藉由乾燥機在130℃下實施2小時熱處理。繼而，使用成形機(東和(TOWA)壓製機公司製造、手動壓製機Y-1)，在成形溫度為175℃、夾具壓力為184kN、轉注(transfer)壓力為5kN、時間為120秒鐘、密封樹脂為GE-100(日東電工(股)製造)的條件下進行密封步驟。使用超音波影像裝置(日立精技(Hitachi Finetech)公司製造、FS200II)觀察密封步驟後的空隙。使用二值化軟體(WinRoof ver.5.6)算出觀察圖像中空隙所佔的面積。將空隙所佔的面積相對於晶粒接合膜的表面積而小於10%的情形評價為「○」，將空隙所佔的面積相對於晶粒接合膜的表面積為10%以上且小於30%的情形評價為「△」，將空隙所佔的面積相 對於晶粒接合膜的表面積為30%以上的情形評價為「×」。將結果表示於表1、表2。 The die-bonding film obtained in each of the examples and the comparative examples was attached to a 9.5 mm square mirror wafer at 60 ° C, and bonded to the ball grid at a temperature of 120 ° C, a pressure of 0.1 MPa, and a time of 1 s. Ball Grid Array (BGA) substrate. This was further subjected to heat treatment at 130 ° C for 2 hours by a dryer. Then, using a molding machine (manufactured by Towa Press Co., Ltd., manual press Y-1), the molding temperature was 175 ° C, the jig pressure was 184 kN, the transfer pressure was 5 kN, the time was 120 seconds, and the seal was used. The resin was subjected to a sealing step under the conditions of GE-100 (manufactured by Nitto Denko Co., Ltd.). The void after the sealing step was observed using an ultrasonic imaging device (manufactured by Hitachi Finetech Co., Ltd., FS200II). The area occupied by the voids in the observed image was calculated using a binarized software (WinRoof ver. 5.6). The case where the area occupied by the void is less than 10% with respect to the surface area of the die-bonding film is evaluated as "○", and the area occupied by the void is 10% or more and less than 30% with respect to the surface area of the die-bonding film. The evaluation is "△", and the area occupied by the void is The case where the surface area of the die-bonding film was 30% or more was evaluated as "x". The results are shown in Tables 1 and 2.

(密封步驟後的氣泡(空隙)消失性2) (The bubble (void) disappearance after the sealing step 2)

將各實施例及比較例中所得的晶粒接合膜在60℃下貼附於9.5mm見方的鏡面晶片上，在溫度為120℃、壓力為0.1MPa、時間為1s的條件下接合於BGA基板上。將其進一步藉由乾燥機在170℃下實施1小時熱處理。繼而，使用成形機(東和壓製機公司製造、手動壓製機Y-1)，在成形溫度為175℃、夾具壓力為184kN、轉注壓力為5kN、時間為120秒鐘、密封樹脂為GE-100(日東電工(股)製造)的條件下進行密封步驟。使用超音波影像裝置(日立精技公司製造、FS200II)觀察密封步驟後的空隙。使用二值化軟體(WinRoof ver.5.6)算出觀察圖像中空隙所佔的面積。將空隙所佔的面積相對於晶粒接合膜的表面積而小於10%的情形評價為「○」，將空隙所佔的面積相對於晶粒接合膜的表面積為10%以上且小於30%的情形評價為「△」，將空隙所佔的面積相對於晶粒接合膜的表面積為30%以上的情形評價為「×」。將結果表示於表1、表2。 The die-bonding film obtained in each of the examples and the comparative examples was attached to a 9.5 mm square mirror wafer at 60 ° C, and bonded to a BGA substrate under the conditions of a temperature of 120 ° C, a pressure of 0.1 MPa, and a time of 1 s. on. This was further subjected to heat treatment at 170 ° C for 1 hour by a dryer. Then, using a molding machine (manufactured by Toho Press Co., Ltd., manual press Y-1), the forming temperature was 175 ° C, the jig pressure was 184 kN, the transfer pressure was 5 kN, the time was 120 seconds, and the sealing resin was GE-100 ( The sealing step is carried out under the conditions of Nitto Denko Electric Co., Ltd.). The gap after the sealing step was observed using an ultrasonic imaging apparatus (manufactured by Hitachi High-Technologies Corporation, FS200II). The area occupied by the voids in the observed image was calculated using a binarized software (WinRoof ver. 5.6). The case where the area occupied by the void is less than 10% with respect to the surface area of the die-bonding film is evaluated as "○", and the area occupied by the void is 10% or more and less than 30% with respect to the surface area of the die-bonding film. The evaluation was "△", and the case where the area occupied by the voids was 30% or more with respect to the surface area of the die-bonding film was evaluated as "x". The results are shown in Tables 1 and 2.

(耐濕回流焊試驗1) (wet resistance reflow test 1)

將各實施例及比較例中所得的晶粒接合膜在60℃下貼附於9.5mm見方的鏡面晶片上，在溫度為120℃、壓力為0.1MPa、時間為1s的條件下接合於BGA基板上。將其進一步藉由乾燥機在130℃下實施2小時熱處理。繼而，使用成形機(東和壓製機公司 製造、手動壓製機Y-1)，在成形溫度為175℃、夾具壓力為184kN、轉注壓力為5kN、時間為120秒鐘、密封樹脂為GE-100(日東電工(股)製造)的條件下進行密封步驟。然後進行175℃×5h的熱硬化，在溫度為30℃、濕度為60%RH、時間為72h的條件下進行吸濕操作，並在以將260℃以上的溫度保持10秒鐘的方式進行溫度設定的紅外線(Infrared，IR)回焊爐中通過樣品。藉由超音波顯微鏡對9個鏡面晶片觀察是否在晶粒接合膜與基板的界面產生剝離，算出產生剝離的比例。將結果表示於表1、表2。 The die-bonding film obtained in each of the examples and the comparative examples was attached to a 9.5 mm square mirror wafer at 60 ° C, and bonded to a BGA substrate under the conditions of a temperature of 120 ° C, a pressure of 0.1 MPa, and a time of 1 s. on. This was further subjected to heat treatment at 130 ° C for 2 hours by a dryer. Then, using a forming machine (Donghe Press Company) Manufacturing and manual press Y-1) under the conditions of a forming temperature of 175 ° C, a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, and a sealing resin of GE-100 (manufactured by Nitto Denko Co., Ltd.) Perform the sealing step. Then, heat hardening was performed at 175 ° C for 5 hours, and the moisture absorption operation was carried out under the conditions of a temperature of 30 ° C, a humidity of 60% RH, and a time of 72 hours, and the temperature was maintained at a temperature of 260 ° C or higher for 10 seconds. The sample is passed through a set infrared (Infrared, IR) reflow oven. The nine mirror wafers were observed by an ultrasonic microscope to see whether or not peeling occurred at the interface between the die-bonding film and the substrate, and the ratio of occurrence of peeling was calculated. The results are shown in Tables 1 and 2.

(耐濕回流焊試驗2) (wet resistance reflow test 2)

將各實施例及比較例中所得的晶粒接合膜在60℃下貼附於9.5mm見方的鏡面晶片上，在溫度為120℃、壓力為0.1MPa、時間為1s的條件下接合於BGA基板上。將其進一步藉由乾燥機在170℃下實施1小時熱處理。繼而，使用成形機(東和壓製機公司製造、手動壓製機Y-1)，在成形溫度為175℃、夾具壓力為184kN、轉注壓力為5kN、時間為120秒鐘、密封樹脂為GE-100(日東電工(股)製造)的條件下進行密封步驟。然後進行175℃×5h的熱硬化，在溫度為30℃、濕度為60%RH、時間為72h的條件下進行吸濕操作，並在以將260℃以上的溫度保持10秒鐘的方式進行溫度設定的IR回焊爐中通過樣品。藉由超音波顯微鏡對9個鏡面晶片觀察是否在晶粒接合膜與基板的界面產生剝離，算出產生剝離的比例。 The die-bonding film obtained in each of the examples and the comparative examples was attached to a 9.5 mm square mirror wafer at 60 ° C, and bonded to a BGA substrate under the conditions of a temperature of 120 ° C, a pressure of 0.1 MPa, and a time of 1 s. on. This was further subjected to heat treatment at 170 ° C for 1 hour by a dryer. Then, using a molding machine (manufactured by Toho Press Co., Ltd., manual press Y-1), the forming temperature was 175 ° C, the jig pressure was 184 kN, the transfer pressure was 5 kN, the time was 120 seconds, and the sealing resin was GE-100 ( The sealing step is carried out under the conditions of Nitto Denko Electric Co., Ltd.). Then, heat hardening was performed at 175 ° C for 5 hours, and the moisture absorption operation was carried out under the conditions of a temperature of 30 ° C, a humidity of 60% RH, and a time of 72 hours, and the temperature was maintained at a temperature of 260 ° C or higher for 10 seconds. Pass the sample in the set IR reflow oven. The nine mirror wafers were observed by an ultrasonic microscope to see whether or not peeling occurred at the interface between the die-bonding film and the substrate, and the ratio of occurrence of peeling was calculated.

(拾取性) (pickup)

使用各實施例及比較例的帶切割帶的晶粒接合膜，根據以下要領，在實際進行半導體晶圓的切割後進行拾取，並評價各帶切割帶的晶粒接合膜的性能。 Using the die-bonding film with a dicing tape of each of the examples and the comparative examples, picking was performed after actually cutting the semiconductor wafer according to the following method, and the performance of the die-bonding film of each tape-cut tape was evaluated.

對半導體晶圓(直徑為8英吋、厚度為0.6mm)進行背面研磨處理，並使用厚度為0.075mm的鏡面晶圓作為工件。背面研磨處理的條件如下述<晶圓研削條件>所述。自帶切割帶的晶粒接合膜剝離分隔件後，在所述晶粒接合膜上將鏡面晶圓在40℃下進行輥壓接而貼合，進而進行切割。輥壓接的條件如下述<貼合條件>所述。另外，切割是以成為10mm見方的晶片尺寸的方式進行全切。切割的條件如下述<切割條件>所述。 A semiconductor wafer (8 inches in diameter and 0.6 mm in thickness) was back-polished, and a mirror wafer having a thickness of 0.075 mm was used as a workpiece. The conditions of the back grinding treatment are as described below in <Wafer Grinding Conditions>. After the die-bonding film of the dicing tape was peeled off from the separator, the mirror wafer was subjected to roll bonding at 40 ° C on the die-bonding film, and bonded, and further cut. The conditions of the roll crimping are as described in the following <adhesion conditions>. Further, the dicing was performed in such a manner that the wafer size was 10 mm square. The conditions of the cutting are as described in <Cutting Conditions> below.

繼而，對各帶切割帶的晶粒接合膜進行紫外線照射，並將所述各帶切割帶的晶粒接合膜進行拉伸，進行將各晶片間設為特定間隔的擴展(expanding)步驟。紫外線照射的條件如下述<紫外線的照射條件>所述。繼而，藉由利用針的上頂方式自各帶切割帶的晶粒接合膜的基材側拾取半導體晶片，並進行拾取性的評價。拾取的條件如下述<拾取條件>所述。評價是將連續拾取100個半導體晶片、並且成功率為100%的情形設為○，將成功率小於100%的情形設為×。將結果表示於表1、表2。 Then, the die-bonding film with the dicing tape is irradiated with ultraviolet rays, and the die-bonding film of each of the dicing tapes is stretched, and an expanding step of setting a specific interval between the wafers is performed. The conditions of the ultraviolet irradiation are as described below in the following "irradiation conditions of ultraviolet rays". Then, the semiconductor wafer was picked up from the substrate side of each of the die-bonding films with the dicing tape by the top-up method of the needle, and the pick-up property was evaluated. The conditions for picking up are as described in <Picking Conditions> below. The evaluation was performed by continuously picking up 100 semiconductor wafers, and the case where the success rate was 100% was ○, and the case where the success rate was less than 100% was ×. The results are shown in Tables 1 and 2.

<晶圓研削條件> <Wafer grinding conditions>

研削裝置：迪斯科(DISCO)公司製造的DFG-8560 Grinding device: DFG-8560 manufactured by DISCO

半導體晶圓：8英吋直徑(自厚度為0.6mm進行背面研削至0.075mm) Semiconductor wafer: 8 inches in diameter (back grinding to 0.075mm from a thickness of 0.6mm)

<貼合條件> <Finishing conditions>

貼附裝置：日東精機製造、MA-3000II Attachment device: Nitto Seiki Manufacturing, MA-3000II

貼附速度計：10mm/min Attached speedometer: 10mm/min

貼附壓力：0.15MPa Attachment pressure: 0.15MPa

貼附時的平台溫度：40℃ Platform temperature when attached: 40 ° C

<切割條件> <Cutting conditions>

切割裝置：迪斯科公司製造、DFD-6361 Cutting device: manufactured by Disco, DFD-6361

切割環：2-8-1(迪斯科公司製造) Cutting ring: 2-8-1 (made by disco company)

切割速度：80mm/sec Cutting speed: 80mm/sec

切割刀： Cutting knife:

Z1；迪斯科公司製造的2050HEDD Z1; 2050 HEDD manufactured by Disco

Z2；迪斯科公司製造的2050HEBB Z2; 2050HEBB made by Disco

切割刀轉速： Cutting knife speed:

Z1；40,000rpm Z1; 40,000 rpm

Z2；40,000rpm Z2; 40,000 rpm

刀高度： Knife height:

Z1；0.170mm(取決於半導體晶圓的厚度(在晶圓厚度為75μm時、為0.170mm)) Z1; 0.170mm (depending on the thickness of the semiconductor wafer (0.170mm at a wafer thickness of 75μm))

Z2；0.085mm Z2; 0.085mm

切割方式：A模式/台階式切割(step cut) Cutting method: A mode / step cut (step cut)

晶圓晶片尺寸：10.0mm見方 Wafer wafer size: 10.0mm square

<紫外線的照射條件> <Ultraviolet irradiation conditions>

紫外線(UV)照射裝置：日東精機(商品名、UM-810製造) Ultraviolet (UV) irradiation device: Nitto Seiki (trade name, manufactured by UM-810)

紫外線照射累計光量：300mJ/cm2 Cumulative amount of ultraviolet radiation: 300mJ/cm 2

另外，紫外線照射自聚烯烴膜側進行。 Further, ultraviolet irradiation was carried out from the side of the polyolefin film.

<拾取條件> <Picking conditions>

新川(SHINKAWA)公司製造的SPA-300 SPA-300 manufactured by Shinkawa (SHINKAWA)

拾取高度為350μm Picking height is 350μm

接腳數為9 The number of pins is 9

(冷藏評價) (refrigeration evaluation)

使用各實施例及比較例的各晶粒接合膜，根據以下的要領，進行冷藏評價。將切割成20cm見方的晶粒接合膜在5℃的冰箱內放置於鋁板上，放置1小時後，將所述膜對半彎折。此時，確認是否產生膜的裂紋、碎片，將無裂紋、缺陷者評價為○，將有裂紋、缺陷者評價為×。並將結果表示於表1、表2。 Each of the die-bonding films of the respective Examples and Comparative Examples was subjected to refrigeration evaluation in accordance with the following procedure. The die-bonding film cut into 20 cm square was placed on an aluminum plate in a refrigerator at 5 ° C, and after standing for 1 hour, the film was bent in half. At this time, it was confirmed whether cracks or chips of the film were generated, and no cracks or defects were evaluated as ○, and cracks and defects were evaluated as ×. The results are shown in Tables 1 and 2.

1‧‧‧基材 1‧‧‧Substrate

2‧‧‧黏著劑層 2‧‧‧Adhesive layer

2a‧‧‧與圖2所示的黏著劑層2的工件貼附部分對應的部分 2a‧‧‧Parts corresponding to the workpiece attachment portion of the adhesive layer 2 shown in Fig. 2

2b‧‧‧其他部分 2b‧‧‧Other parts

3‧‧‧晶粒接合膜 3‧‧‧ grain bonding film

3a‧‧‧工件貼附部分(晶粒接合膜) 3a‧‧‧Working part attachment (grain bonding film)

3b‧‧‧工件貼附部分3a以外的部分 3b‧‧‧Parts other than the part 3a attached to the workpiece

4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer

10‧‧‧帶切割帶的晶粒接合膜 10‧‧‧Cutting film with dicing tape

Claims (6)

一種帶切割帶的晶粒接合膜，其具有：在基材上積層有黏著劑層的切割帶、及積層於所述黏著劑層上的晶粒接合膜，且其特徵在於：所述晶粒接合膜含有熱塑性樹脂(a)、及25℃下的黏度為0.1Pa．sec~50Pa．sec的熱硬化性樹脂(b)，所述熱硬化性樹脂(b)為選自由環氧樹脂及酚樹脂所組成的組群的1種以上，所述熱硬化性樹脂(b)相對於全部樹脂成分的含量為1重量%以上、50重量%以下，所述晶粒接合膜在170℃下進行1小時加熱硬化後的在260℃下的儲存彈性模數為0.05MPa以上。 A die-bonding film with a dicing tape, comprising: a dicing tape having an adhesive layer laminated on a substrate; and a grain bonding film laminated on the adhesive layer, wherein: the crystal grain The bonding film contains a thermoplastic resin (a) and a viscosity at 25 ° C of 0.1 Pa. Sec~50Pa. The thermosetting resin (b) of the sec, the thermosetting resin (b) is one or more selected from the group consisting of an epoxy resin and a phenol resin, and the thermosetting resin (b) is relative to all The content of the resin component is 1% by weight or more and 50% by weight or less, and the storage elastic modulus at 260 ° C after the grain bonding film is heat-hardened at 170 ° C for 1 hour is 0.05 MPa or more. 如申請專利範圍第1項所述之帶切割帶的晶粒接合膜，其中所述熱塑性樹脂(a)為含有官能基的丙烯酸系共聚物。 The die-bonding film with a dicing tape according to the above aspect of the invention, wherein the thermoplastic resin (a) is a functional group-containing acrylic copolymer. 如申請專利範圍第1項所述之帶切割片的晶粒接合膜，其中所述熱硬化性樹脂(b)為下述化學式(1)所示的熱硬化性樹脂： (其中，式中，n為0~10的整數，R1分別獨立地表示烯丙 基或H，至少1個為烯丙基，m為1~3的整數)。 The die-bonding film with a dicing sheet according to the first aspect of the invention, wherein the thermosetting resin (b) is a thermosetting resin represented by the following chemical formula (1): (wherein, n is an integer of 0 to 10, R 1 each independently represents an allyl group or H, at least one is an allyl group, and m is an integer of 1 to 3). 如申請專利範圍第1項所述之帶切割帶的晶粒接合膜，其中所述晶粒接合膜在5℃下的斷裂伸長率為10%以上。 The die-bonding film with a dicing tape according to claim 1, wherein the die-bonding film has an elongation at break at 5 ° C of 10% or more. 如申請專利範圍第1項所述之帶切割帶的晶粒接合膜，其中所述黏著劑層包含丙烯酸系聚合物，所述丙烯酸系聚合物含有丙烯酸2-乙基己酯作為結構單元。 The die-bonding film with a dicing tape according to claim 1, wherein the adhesive layer contains an acrylic polymer containing 2-ethylhexyl acrylate as a structural unit. 一種半導體裝置的製造方法，其特徵在於包括：貼合步驟，將如申請專利範圍第1項至第5項中任一項所述之帶切割帶的晶粒接合膜的晶粒接合膜、與半導體晶圓的背面貼合；切割步驟，將所述半導體晶圓與所述帶切割帶的晶粒接合膜一起切割，而形成晶片狀半導體元件；拾取步驟，將所述半導體元件與所述晶粒接合膜一起自所述帶切割帶的晶粒接合膜拾取；晶粒接合步驟，經由所述晶粒接合膜，將所述半導體元件在被黏接體上進行晶粒接合；打線接合步驟，對所述半導體元件進行打線接合；及對所述半導體元件進行密封的步驟。 A method of manufacturing a semiconductor device, comprising: a bonding step, a die-bonding film of a die-bonding film with a dicing tape according to any one of claims 1 to 5, and a back surface of the semiconductor wafer; a cutting step of cutting the semiconductor wafer together with the die bond film with the dicing tape to form a wafer-shaped semiconductor device; and a picking step of the semiconductor device and the crystal a grain bonding film is picked up from the die-bonding film with the dicing tape; a die bonding step, the semiconductor element is die-bonded on the bonded body via the die-bonding film; and a wire bonding step, Wire bonding the semiconductor element; and sealing the semiconductor element.
TW103125026A 2013-07-26 2014-07-22 Die bond film with dicing tape and production method of semiconductor device TWI673338B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013155170A JP6193663B2 (en) 2013-07-26 2013-07-26 Die-bonding film with dicing tape and method for manufacturing semiconductor device
JP2013-155170 2013-07-26

Publications (2)

Publication Number Publication Date
TW201510162A true TW201510162A (en) 2015-03-16
TWI673338B TWI673338B (en) 2019-10-01

Family

ID=52488940

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103125026A TWI673338B (en) 2013-07-26 2014-07-22 Die bond film with dicing tape and production method of semiconductor device

Country Status (4)

Country Link
JP (1) JP6193663B2 (en)
KR (1) KR102273450B1 (en)
CN (1) CN104342047B (en)
TW (1) TWI673338B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6514561B2 (en) * 2015-04-27 2019-05-15 リンテック株式会社 Method of manufacturing semiconductor device and method of manufacturing adhesive composition
WO2017073627A1 (en) * 2015-10-29 2017-05-04 リンテック株式会社 Film for protective film formation and composite sheet for protective film formation
CN109315069B (en) * 2016-07-07 2021-01-08 名幸电子有限公司 Three-dimensional wiring board, method for manufacturing three-dimensional wiring board, and substrate for three-dimensional wiring board
JP2018178002A (en) * 2017-04-17 2018-11-15 日東電工株式会社 Dicing/die-bonding film
TW202128938A (en) * 2019-11-22 2021-08-01 日商琳得科股份有限公司 Film-like firing material, film-like firing material with support sheet, multilayer body, and method for producing device
CN111261527B (en) * 2020-02-11 2021-10-01 深圳市法本电子有限公司 Semiconductor packaging component and preparation method thereof
WO2023106177A1 (en) * 2021-12-06 2023-06-15 東レ株式会社 Method for manufacturing led-mounting substrate
CN117511426B (en) * 2024-01-05 2024-04-12 深圳市长松科技有限公司 Film for packaging and blocking water vapor, semiconductor film packaging method and structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE55238B1 (en) 1983-08-03 1990-07-04 Nat Starch Chem Corp Carrier film with conductive adhesive for dicing of semiconductor wafers
JP2001214028A (en) * 2000-02-02 2001-08-07 Ube Ind Ltd Heat-resistant liquid phenol novolak resin and its cured product
MY142246A (en) * 2003-06-10 2010-11-15 Hitachi Chemical Co Ltd Adhesive film and process for preparing the same as well as adhesive sheet and semiconductor device
US20050227064A1 (en) * 2004-04-01 2005-10-13 Hwail Jin Dicing die bonding film
KR101140512B1 (en) * 2007-03-01 2012-04-30 닛토덴코 가부시키가이샤 Thermosetting die bonding film
EP2136393A4 (en) * 2007-04-10 2012-10-24 Sumitomo Bakelite Co Adhesive film for semiconductor and semiconductor device made with the same
JP4939574B2 (en) * 2008-08-28 2012-05-30 日東電工株式会社 Thermosetting die bond film
WO2011058997A1 (en) * 2009-11-13 2011-05-19 日立化成工業株式会社 Adhesive composition for semiconductor, semiconductor device, and method for manufacturing semiconductor device
JP4976481B2 (en) * 2009-12-04 2012-07-18 日東電工株式会社 Thermosetting die bond film, dicing die bond film, and semiconductor device
JP5760702B2 (en) * 2010-05-31 2015-08-12 東レ株式会社 Adhesive composition for electronic device and adhesive sheet for electronic device
JP5820170B2 (en) * 2011-07-13 2015-11-24 日東電工株式会社 Adhesive film for semiconductor device, flip chip type semiconductor back film, and dicing tape integrated semiconductor back film
TWI614322B (en) * 2011-07-25 2018-02-11 日東電工股份有限公司 Adhesive sheet and use thereof

Also Published As

Publication number Publication date
CN104342047B (en) 2020-10-27
KR102273450B1 (en) 2021-07-06
TWI673338B (en) 2019-10-01
CN104342047A (en) 2015-02-11
KR20150013048A (en) 2015-02-04
JP2015026707A (en) 2015-02-05
JP6193663B2 (en) 2017-09-06

Similar Documents

Publication Publication Date Title
KR102493750B1 (en) Dicing·die bond film and manufacturing method for semiconductor device
TWI428419B (en) Cut crystal sticky film
JP5305501B2 (en) Thermosetting die bond film
TWI441894B (en) Thermosetting die bonding film, dicing/die bonding film and semiconductor device
TWI538976B (en) Thermal setting type die-bond film
JP5398083B2 (en) Die bond film and its use
TWI462985B (en) Thermosetting die bonding film, dicing/die bonding film and semiconductor device
TW201510162A (en) Die bond film with dicing tape and production method of semiconductor device
WO2009090838A1 (en) Dicing/die bonding film
JP2011174042A (en) Film for producing semiconductor device and method for producing semiconductor device
JP2012069586A (en) Dicing die-bonding film, manufacturing method of dicing die-bonding film, and manufacturing method of semiconductor device
WO2014142154A1 (en) Reinforcing sheet and process for producing semiconductor device through secondary mounting
JP2017183705A (en) Dicing die bonding film, and method of manufacturing semiconductor device
JP2011023607A (en) Exoergic die-bonding film
TWI735584B (en) Manufacturing method of die sticking film, dicing die sticking film and semiconductor device
JP2013038408A (en) Adhesive tape for fixing semiconductor wafer, method for manufacturing semiconductor chip and adhesive tape with adhesive film
JP6356458B2 (en) Die bond film, die bond film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device
TWI552216B (en) Die bonding film, dicing die bonding film, and semiconductor apparatus
TW201608649A (en) Die bonding film with dicing sheet, semiconductor device and semiconductor device manufacturing method
JP2012186361A (en) Dicing/die-bonding film and semiconductor element
JP5749314B2 (en) Heat dissipation die bond film
KR20180116751A (en) Dicing die bond film
JP5436524B2 (en) Manufacturing method of dicing die-bonding film
JP2012186360A (en) Dicing/die-bonding film and semiconductor element
JP4954568B2 (en) Dicing die-bonding film and method for manufacturing semiconductor device using the same