CN117511426B - Film for packaging and blocking water vapor, semiconductor film packaging method and structure - Google Patents
Film for packaging and blocking water vapor, semiconductor film packaging method and structure Download PDFInfo
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- CN117511426B CN117511426B CN202410019544.6A CN202410019544A CN117511426B CN 117511426 B CN117511426 B CN 117511426B CN 202410019544 A CN202410019544 A CN 202410019544A CN 117511426 B CN117511426 B CN 117511426B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 127
- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 230000000903 blocking effect Effects 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 129
- 239000012790 adhesive layer Substances 0.000 claims abstract description 57
- 238000012858 packaging process Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 159
- 239000010410 layer Substances 0.000 claims description 67
- 239000010409 thin film Substances 0.000 claims description 40
- 239000011324 bead Substances 0.000 claims description 18
- 238000001723 curing Methods 0.000 claims description 18
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 238000004026 adhesive bonding Methods 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 claims description 3
- 238000000016 photochemical curing Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 229920006280 packaging film Polymers 0.000 claims 3
- 239000012785 packaging film Substances 0.000 claims 3
- 239000003292 glue Substances 0.000 abstract description 30
- 238000007789 sealing Methods 0.000 abstract description 20
- 239000005022 packaging material Substances 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 13
- 238000011049 filling Methods 0.000 abstract description 6
- 238000003466 welding Methods 0.000 abstract description 2
- 239000000178 monomer Substances 0.000 description 22
- 239000000919 ceramic Substances 0.000 description 15
- 239000004033 plastic Substances 0.000 description 12
- 229920003023 plastic Polymers 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
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- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
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- 238000002834 transmittance Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- 238000012536 packaging technology Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present application relates to a film for packaging a moisture blocking film, a semiconductor film packaging method and a structure, the film including a film body having an element portion integrally connected with a sacrificial portion, and a cured adhesive layer formed on the element portion. The film for sealing and blocking the water vapor is used as a new semiconductor packaging material, so that the problems that the pins or welding spots of the chip are connected in a short circuit or opened in an open circuit manner due to high-temperature and high-pressure glue overflow during the traditional semiconductor packaging material die sealing and packaging, and the whole circuit is invalid are solved, and the technical problem that the electrical performance is reduced due to the strange capacitance or inductance effect formed by glue overflow is solved, and the nondestructive packaging of the semiconductor chip is realized. The film for sealing and blocking the water vapor can be solidified and adhered on the substrate and the chip, so that the semiconductor packaging process is simplified, the die sealing and packaging equipment and the die required by glue filling are not needed, and the packaging cost of the semiconductor package is reduced.
Description
Technical Field
The present disclosure relates to the field of film packaging technology, and in particular, to a film for packaging water vapor barrier, a semiconductor film packaging method, and a semiconductor film packaging structure.
Background
Integrated circuit packages (Integrated Circuit Packaging) refer to packaging integrated circuit chips (Integrated Circuit, simply referred to as ICs) to protect the chips and provide suitable pin connections and external connection interfaces. The integrated circuit package not only can provide physical protection for the chip, but also provides proper pin layout and connection mode for the chip, so that the chip can be effectively connected with other electronic devices or systems. Therefore, the primary purpose of the integrated circuit package is to protect the chip from the external environment, so that it can perform circuit functions stably, reliably and normally.
Existing integrated circuit packages are mainly packaged by plastic or ceramic. However, due to the excessively high fluidity of the packaging material, the plastic or ceramic packaging integrated circuit is easy to overflow, which not only causes overflow pollution, but also causes short circuit or opening between pins of the integrated circuit, which results in failure of the whole circuit, and the strange capacitance or inductance formed by overflow can cause degradation of electrical performance, such as signal distortion.
The invention patent application publication number CN104392958A discloses a semiconductor packaging method of wafer-level through silicon vias, which mainly comprises the following steps: 1, a cavity structure is manufactured on the front surface of a cover plate; 2, bonding the front surface of the cover plate with the front surface of the wafer through a bonding machine; grinding the back of the wafer by a grinder, and performing stress-relief plasma etching; 4, starting from the back of the wafer, removing all silicon belonging to the dicing channel area; etching the back of the wafer to form a through silicon via hole, and exposing the bonding pad; 6, sequentially manufacturing a passivation layer, a metal layer and a solder mask layer in the back surface of the wafer and the through silicon via hole to form a redistribution circuit layer, so as to lead the bonding pad to a preset solder ball position on the back surface of the wafer; and 7, manufacturing solder balls and cutting along the cutting path. Although the related prior art implementation of the CSP wafer electrode package does not use the packaging material of the conventional mold package, a cavity structure is formed between the cover plate and the substrate, the bonding adhesive is directly adhered to the upper surface of the chip at the periphery of the cover plate, the side edge of the chip cannot be protected, and the chip size is generally smaller than the size of the substrate borne at the bottom, so that the risk of losing performance of the chip is increased due to the phenomenon of glue overflow. In addition, the packaging cover plate is made of hard transparent materials such as glass, quartz, plastic and the like, or hard opaque materials such as silicon, ceramic, metal and the like, and an etching process is also needed to etch the back of the wafer to form through silicon holes, so that a functional area or a bonding pad which is usually positioned on the front surface of the wafer chip is exposed in a cavity structure, and the functional area is easy to lose performance due to pollution of the cavity structure, or short circuit connection or disconnection is easy to occur between leads of the chip, so that the whole circuit is invalid.
Disclosure of Invention
In order to overcome the technical problems that when a semiconductor chip is packaged by using a molding compound or a capping type ceramic, the traditional molding compound packaging material is too high in fluidity due to extrusion of adhesive glue under high temperature and high pressure or under a cover plate, the packaging process is easy to generate glue overflow phenomenon, glue overflow pollution can be caused, short circuit connection or open circuit opening can be caused between chip leads to cause the failure of the whole circuit, and the electrical performance is reduced due to the strange capacitance or inductance effect formed by glue overflow.
In a first aspect, the present application provides a film for packaging a water vapor barrier, which adopts the following technical scheme:
a film for encapsulating a moisture barrier, comprising:
a film body having an element portion and a sacrificial portion integrally connected, each having an inner surface and a corresponding outer surface, a portion of the outer surface of the element portion being used to form an exposed upper surface of the semiconductor thin film package;
a cured adhesive layer formed on an inner surface of the element portion of the film body, the adhesive layer being thermosetting or photo-curing for being a part of the semiconductor thin film package to bond the substrate and the chip of the semiconductor thin film package;
the film body can block water vapor, allow light to penetrate and has electrical insulation property and thermal stability; the adhesive layer has no adhesion at normal temperature or in no light, and has adhesion under heating, pressurizing or light.
By adopting the technical scheme, the film for packaging and blocking the moisture is used for packaging the semiconductor chip to replace the traditional semiconductor packaging material such as plastic or ceramic. When the film for packaging and blocking the moisture is used for packaging the semiconductor chip, the film body keeps the film solid state and is not influenced by the processing temperature, the curing type bonding layer is liquid in the curing process, but the bonding layer can be formed only on the inner surface of the element part of the film body but not on the inner surface of the sacrifice part of the film body, and the film is attached to the film body in the liquid state, so that the film has weaker fluidity and thinner and controllable thickness.
Optionally, a plurality of spacer beads are dispersed in the bonding layer, so that the fluid of the bonding layer can be uniformly adhered to the inner surface of the element part when the element part is turned or inclined.
By adopting the technical scheme, when the cementing layer is solidified, the cementing layer is changed from a liquid state to a solid state. When the adhesive layer is in a liquid state, the film for packaging and blocking water vapor is turned over or inclined, and a plurality of interval beads with equal spherical diameters are scattered in the adhesive layer to prevent the adhesive of the adhesive layer from flowing downwards so as to ensure that the adhesive of the adhesive layer is uniformly distributed on the inner surface of the element part.
In a second aspect, the present application provides a thin film packaging method, which adopts the following technical scheme:
a thin film encapsulation method comprising:
s1, providing the film for packaging and blocking water vapor;
s2, placing a substrate on the sacrificial part of the film, wherein a chip is arranged on the upper surface of the substrate;
s3, overturning the element part and covering and pressing the element part on the substrate, so that the bonding layer is attached to the substrate and the chip;
s4, curing the bonding layer to enable the element part of the film to be bonded on the substrate and the chip;
s5, cutting the thin film at the side edge, so that the element part and the sacrifice part of the thin film are not integrally connected any more, and the sacrifice part is peeled off later;
s6, arranging a plurality of solder balls on the bottom surface of the substrate;
s7, cutting the substrate and the element part of the film in a singulation mode to form a plurality of semiconductor film packaging structures;
the solder ball placement step S6 may be performed between the step S5 and the step S7, or may be performed in step S2 in advance.
By adopting the technical scheme, the film for packaging and blocking the water vapor is used for packaging the semiconductor chip, after the local upper surface of the substrate and the upper surface of the chip are bonded on the element part of the film for packaging and blocking the water vapor by the bonding layer, the film is cut along the side edge of the substrate, so that the element part and the sacrifice part of the film are not integrally connected any more, the sacrifice part of the film is peeled off later, and finally, the semiconductor film packaging structure is obtained, and the nondestructive film packaging of the semiconductor chip is realized. Therefore, the semiconductor packaging process replaces the die-sealing packaging equipment with a film laminating machine, and a die required by glue filling is not needed, so that the packaging cost of the semiconductor package is greatly reduced.
Optionally, step S4 includes:
s41, partially curing the gluing layer at the peripheral part of the periphery of the element part to form a packaging bag;
s42, extracting air in the packaging bag;
s43, solidifying the middle part of the gluing layer on the element part, so that the element part is adhered on the substrate and the chip.
By adopting the technical scheme, the gluing layer is partially solidified, the partial solidifying part is the position where the periphery of the element part and the sacrificial part are directly adhered through the gluing layer, so as to form a packaging bag, and the relative position of the substrate and the sacrificial part is primarily fixed; and then, the air in the packaging bag is extracted to form negative pressure in the packaging bag, so that the substrate can be fixed on the sacrificial part, and the adhesive layer can be firmly attached to the upper surfaces of the substrate and the chip. At this time, the intermediate portion on the element portion is cured so that the element portion is sufficiently bonded to the substrate and the chip.
Optionally, the glue layer has an air passage on the element portion and an air extraction opening on the sacrificial portion for extracting air in step S42.
By adopting the above technical scheme, step S3 is performed after the element portion is turned over and is pressed on the substrate, the element portion is mainly attached to the upper surface of the substrate, the sacrificial portion is mainly attached to the lower surface of the substrate, the periphery of the element portion is mutually attached to the periphery of the sacrificial portion, air exists between the element portion and the sacrificial portion, and the air can affect the adhesion of the adhesive layer. Through the air passage and the air suction hole, air between the element part and the sacrificial part can be extracted, so that the bonding layer on the element part can be fully bonded with the substrate and the chip.
Optionally, the sacrificial portion has a plurality of through-holes for fixing the substrate in step S2 and extracting air in step S42.
By adopting the technical scheme, the air between the element part and the sacrificial part can be extracted through the air suction hole, so that the bonding layer can fully bond the substrate and the chip.
Alternatively, step S42 and step S43 are performed simultaneously, or performed separately.
By adopting the technical scheme, the step S42 and the step S43 are simultaneously implemented, so that the packaging speed of the semiconductor can be effectively improved; by performing step S42 and step S43, respectively, air between the element portion and the sacrificial portion can be sufficiently evacuated, and the element portion and the sacrificial portion can be sufficiently bonded.
In a third aspect, the present application provides a semiconductor thin film package structure, based on the above-mentioned thin film implementation for packaging and blocking water vapor, the semiconductor thin film package structure includes:
the chip is arranged on the upper surface of the substrate;
a dicing unit of an element portion of the film substantially covering the upper surface of the substrate, the dicing unit including a monomer film of a film body and a monomer adhesive of a cured adhesive layer, the monomer adhesive of the adhesive layer being formed on an inner surface of the monomer film of the film body, the monomer adhesive of the adhesive layer being bonded to the monomer film of the film body on the substrate and the chip;
and the solder balls are arranged on the lower surface of the substrate.
By adopting the technical scheme, the composition of the packaging material of the traditional semiconductor packaging structure is changed, and the film for packaging and blocking water vapor replaces the molding compound sealing colloid in the traditional semiconductor packaging structure. In the semiconductor packaging process, as the film body has light transmittance, the bonding layer in the film is cured in a heating and pressurizing or/and UV illumination mode, the bonding layer for packaging the film for blocking water can bond the substrate and the chip of the semiconductor film packaging structure, the complex packaging process that packaging materials such as high-temperature melting plastic or ceramic and the like are required in the molding process and are poured on the substrate and the chip is omitted, and the semiconductor packaging process and the packaging material consumption are greatly simplified, because the film body can replace the upper half of the sealing material, the bonding layer is adhered to the film body in advance, and the molding glue filling flow path is omitted.
Optionally, a plurality of spacer beads with equal sphere diameters are scattered in the bonding layer; preferably, the spacer beads have a light diffusion effect; preferably, the dicing die integrally forms an upper surface of the semiconductor thin film package.
By adopting the technical scheme, the spacing beads are scattered in the gluing layer, and when the component part of the film for packaging and blocking water vapor is inclined to drive the gluing layer to incline, the glue of the gluing layer in a liquid state can be prevented from flowing to the lower part so as to ensure that the glue of the gluing layer is uniformly distributed on the inner surface of the component part; in a preferred example, the spacer beads have a light diffusion effect, that is, the light refractive index of the spacer beads is different from the light refractive index of the colloid in the bonding layer, and specifically, the thin film packaging LED chip for packaging and blocking water vapor can be used.
In summary, the technical solution of the embodiments of the present application includes at least one of the following beneficial technical effects:
1. a thin film for encapsulating moisture blocking is used as a new semiconductor encapsulation material to replace the conventional semiconductor encapsulation material such as plastic or ceramic. When the film for packaging the semiconductor which is used for blocking water vapor is used for packaging the semiconductor, the film body is kept solid, the curing type cementing layer is liquid in the curing process, but the cementing layer is formed on the inner surface of the element part of the film body, is adhered to the film body in the liquid state, has weaker fluidity and thinner thickness and is controllable, and solves the problems that when plastic or ceramic is used as a semiconductor packaging material for packaging in a mold, the traditional packaging material is easy to overflow glue under high temperature and high fluidity, and leads or welding spots connected with a semiconductor chip (or an integrated circuit) are easy to generate short circuit connection or open circuit, so that the whole circuit is invalid, and the abnormal capacitance or inductance effect formed by the overflow glue can cause the reduction of electrical performance;
2. the semiconductor chip is packaged by using the film for packaging and blocking water vapor, the upper surface of the part of the substrate and the upper surface of the chip are bonded by the bonding layer, the upper surface of the element part of the film for packaging and blocking water vapor is used as a laminating surface, and then the film is cut along the side edge of the substrate, so that the element part of the film and the sacrificial part are not integrally connected any more, the sacrificial part of the film is peeled off later, and finally, the semiconductor film packaging structure is obtained, and the film packaging of the semiconductor chip without mould sealing damage is realized. In addition, the traditional die-sealing packaging equipment and the die required by glue filling are not required in the semiconductor packaging process, so that the packaging cost of the semiconductor package is greatly reduced;
3. the composition of the semiconductor packaging structure is changed, and a plastic packaging layer or a ceramic packaging layer in the traditional semiconductor packaging structure is replaced by a film for packaging and blocking moisture. In the packaging process, the film for packaging the moisture-blocking film is heated and pressurized or illuminated, so that the bonding layer for packaging the moisture-blocking film is used for bonding the substrate and the chip of the semiconductor film packaging structure, the complex packaging process of high-temperature melting packaging materials such as plastics or ceramics and high-pressure pouring on the substrate and the chip is omitted, and the semiconductor packaging process is greatly simplified;
4. the curing type cementing layer in the film for packaging and blocking water vapor is scattered with a plurality of equal sphere diameter spacing beads which have light diffusion effect.
Drawings
FIG. 1 is an exploded perspective view of a film structure for packaging a moisture barrier of the present application;
FIG. 2 is a flow chart of a thin film encapsulation method of the present application;
FIG. 3 is a flow chart of a thin film encapsulation method step S4 of the present application;
FIG. 4 is a schematic top view of a film structure for sealing and blocking water vapor in step S1 according to an embodiment of the present application;
FIG. 5 is a schematic top view of a substrate with chips disposed thereon on a film according to step S2 of the present application;
FIG. 6 is a schematic top view of a film after the element portion is flipped over and laminated on the substrate in step S3 according to an embodiment of the present application;
FIG. 7 is a schematic view of the present application taken along line A-A of FIG. 6;
FIG. 8 is a schematic top view of a film for sealing and blocking water vapor in step S1 according to a second embodiment of the present application;
fig. 9 is a schematic structural diagram of placing a substrate and a chip on a film in step S2 according to a second embodiment of the present application;
fig. 10 is a schematic top view of a film after the element portion is flipped over and laminated on the substrate in step S3 according to a second embodiment of the present application;
FIG. 11 is a schematic view of the present application in section along line B-B in FIG. 10;
fig. 12 is a schematic cross-sectional view of a semiconductor thin film package of the present application.
Reference numerals illustrate: 10. a film body; 11. an element section; 12. a sacrificial portion; 20. a glue layer; 21. a spacer bead; 22. an airway; 23. an extraction opening; 24. an air suction hole; 30. a substrate; 40. a chip; 50. solder balls; 60. cutting the monomer; 61. a monomer film; 62. and (3) monomer glue.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. Based on the embodiments in the present application, other embodiments obtained by those of ordinary skill in the art under the premise of understanding the inventive concept of the present application are all within the scope of protection of the present application.
It should be noted that, in the embodiment of the present application, directional indications (such as up, down, left, right, front, and rear … …) are referred to, and the directional indications are merely used to explain the relative positional relationship, movement conditions, and the like between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In order to facilitate understanding of the technical solutions of the present application, the film for packaging and blocking water vapor, the film packaging method, and the semiconductor film packaging structure of the present application will be described in further detail below, but not as a protection scope defined by the present application.
Referring to fig. 1, an embodiment of the present application discloses a film for packaging water vapor barrier, which includes a film body 10 and a cured adhesive layer 20. The film body 10 has an element portion 11 and a sacrificial portion 12 integrally connected. The element part 11 can be turned over and can be covered on the sacrifice part 12 by pressure, the element part 11 and the sacrifice part 12 each have an inner surface and a corresponding outer surface, a part of the outer surface of the element part 11 is used for forming an exposed upper surface of the semiconductor thin film packaging structure, and the sacrifice part 12 is used for temporarily protecting the bottom surface of the substrate 30 in the packaging process; the film body 10 has the properties of water resistance, light transmittance for light transmission, electrical insulation and heat resistance stability, the specific material of the base material of the film body 10 can be PET (polyethylene terephthalate), the film body has high light transmittance and film thinning operation, and the production process conditions of the film are all executed at the heat-resistant temperature of the base material of the film body 10. The cured adhesive layer 20 is formed on the inner surface of the element portion 11 of the film body 10, the adhesive layer 20 is thermosetting or/and photo-curing to combine multi-stage curing characteristics, the element portion 11 of the film body 10 is used as a part of a semiconductor thin film package structure, and is adhered to the substrate 30 through the adhesive layer 20 and a plurality of chips 40 arranged on the substrate 30 by a die bonding or flip chip method; the bonding layer 20 is specifically a multi-stage cured adhesive, and is non-adhesive at normal temperature or in the absence of light; the adhesive is heated and pressurized or/and has adhesion under UV light. Therefore, the film for packaging and blocking water vapor can be rolled into a film roll at normal temperature or under no specific illumination, so that the film is convenient to store.
The film for packaging and blocking water vapor is used for packaging the semiconductor chip, replaces the traditional semiconductor packaging material, such as plastic or ceramic, and solves the problems that when the plastic or ceramic is used as the semiconductor packaging material for packaging, fluid of the traditional packaging material has fluidity at high temperature and high pressure, short circuit connection or disconnection opening is easily caused between pins of an integrated circuit when glue overflow occurs, the whole circuit is invalid, and the electrical performance is reduced due to odd capacitance or inductance effect caused by glue overflow. The implementation principle of the film for packaging and blocking water and gas is as follows: the element portion 11 of the film body 10 is coated with a multi-stage curing adhesive, and the multi-stage curing adhesive can be used as an adhesive layer 20 after primary curing, and the adhesive layer 20 with multi-stage curing adhesive characteristics is cured on the element portion 11 while the substrate 30 and the chip 40 are adhered. The sacrificial portion 12 of the film body 10 has the function of protecting the substrate 30 and the bottom film that easily draws the air in the package during the packaging process.
Referring to fig. 2 in conjunction with fig. 4 to 7, the embodiment of the application also discloses a thin film packaging method, which includes the following steps S1 to S7.
Step S1 referring to FIG. 4, a film for encapsulating a moisture barrier is provided as described above; the film can be led out from a reel and cut; the film has an element part 11 and a sacrificial part 12 integrally connected, each having an inner surface and a corresponding outer surface, and a portion of the outer surface of the element part 11 is used for forming an exposed upper surface of the semiconductor film package; a cured adhesive layer 20 is formed on the inner surface of the element portion 11 of the film body 10, the adhesive layer 20 being thermosetting or photo-setting.
Step S2 referring to FIG. 5, a substrate 30 is placed at the middle part of the sacrificial part 12 of the film, the upper surface of the substrate 30 is provided with a plurality of chips 40, the middle part of the sacrificial part 12 is not provided with a bonding layer 20, i.e. the lower surface of the substrate 30 and the film keep a non-bonding or weak bonding relationship; the substrate 30 is an IC carrier for carrying the chip 40, and may be any of a printed circuit board or a ceramic circuit board; the chip 40 may be mounted right side up on the substrate 30 and electrically connected to the substrate 30 with wire bonds; the chip 40 may also be mounted on the substrate 30 with the front side facing down in a flip-chip manner, and the chip 40 and the substrate 30 are electrically connected by solder bumps and form a fixed connection.
Step S3, referring to fig. 6 and 7, the element portion 11 is turned over and pressed onto the substrate 30, so that the element portion 11 covers the peripheral portion of the sacrificial portion 12 at the peripheral portion, and the adhesive layer 20 on the element portion 11 is attached to the substrate 30 and the chip 40; the main function of the sacrificial portion 12 is to provide a controllable air extraction channel in the new mold-free packaging process; in the process of attaching the adhesive layer 20, the element portion 11 is spaced from the adhesive layer 20 and a thermal compression head (not shown) above the film, and the thermal compression head may use a soft compression head to deform the element portion 11 moderately to attach to the substrate 30 and the chip 40 better.
Step S4 referring to FIG. 6, the bonding layer 20 is heated and pressurized or/and irradiated with UV light to cure the bonding layer 20, such that the element portion 11 for packaging the moisture-blocking film is adhered to the substrate 30 and the chip 40; wherein the pressurizing force is applied to the bonding layer 20 through the element part 11 by a thermal compression head through which uv light can be also applied; the operations of steps S1 to S4 may be performed on a tape conveyor or may be performed on a sheet.
Step S5 referring to FIG. 7, the thin film is cut laterally, so that the element portion 11 and the sacrificial portion 12 of the thin film are not integrally connected any more, for subsequent peeling of the sacrificial portion 12; the sacrificial portion 12 may be peeled off after step S5 or may remain until the package structure is used for surface bonding.
Step S6, referring to fig. 12, a plurality of solder balls 50 are disposed on the bottom surface of the substrate 30; the solder balls 50 serve as signal lead-out contacts and signal lead-in contacts for the chip 40 through the substrate 30.
Step S7, referring to fig. 12, singulating the substrate 30 and the element portion 11 of the film to form a plurality of semiconductor thin film packages; the step S6 is performed between the step S5 and the step S7, or performed in step S2 in advance, that is, the arrangement of the solder balls 50 may be performed in the step of providing the substrate 30 before the packaging, or may be performed after the packaging.
In the embodiment of the application, the thin film for packaging and blocking the water vapor is used for packaging the semiconductor chip, after the upper surface of part of the substrate 30 and the upper surface of the chip 40 are adhered to the element part 11 for packaging and blocking the water vapor by the adhesive layer 20, the thin film is cut along the side edge of the substrate 30, so that the element part 11 and the sacrificial part 12 of the thin film are not integrally connected any more, the sacrificial part 12 of the thin film is peeled off later, and finally, the semiconductor thin film packaging structure is obtained, and the thin film packaging of the semiconductor chip without the mold sealing damage is realized. Therefore, the semiconductor packaging process does not need molding packaging equipment and a mold needed by molding and glue filling, a cavity structure packaged by a cover plate is not needed to be reserved in the product, the packaging cost of the semiconductor package is greatly reduced due to the protectiveness of filling packaging and the equipment requirement simplicity of cavity packaging.
In addition, the semiconductor packaging process is to bond the element part 11 of the film on the substrate 30 and the chip 40 by heating and pressurizing or/and adding UV light, so that the complex packaging process of melting packaging materials such as plastic or ceramic at high temperature and pouring the packaging materials on the substrate 30 and the chip 40 in the traditional packaging process is omitted, and the semiconductor packaging process is greatly simplified.
Referring to fig. 3, step S4 includes:
s41, locally heating and pressurizing the patterned adhesive layer 20 or/and irradiating the patterned adhesive layer 20 with local UV light to locally cure the peripheral part of the adhesive layer 20 at the periphery of the element part 11 so as to form a packaging bag;
s42, extracting air in the packaging bag;
s43, heating and pressurizing the bonding layer 20 comprehensively or irradiating the bonding layer 20 with comprehensive UV light, and curing the middle part of the bonding layer 20 on the element part 11, so that the element part 11 is adhered on the substrate 30 and the chip 40.
In the step S41 of patterning and partially curing the adhesive layer 20 to form a package, the relative positions of the substrate 30 and the sacrificial portion 12 may be preliminarily fixed; and then, the air in the packaging bag is pumped to form negative pressure in the packaging bag, so that the substrate 30 can be fixed on the sacrificial part 12, and the adhesive layer 20 can be smoothly and firmly attached to the peripheral part of the substrate 30 and the upper surface of the chip 40. At this time, the intermediate portion on the element portion 11 is cured so that the element portion 11 can be sufficiently adhered to the substrate 30 and the chip 40.
Example 1
Referring to fig. 4 again, the sacrificial portion 12 is located on the right end face of the film body 10, the glue layer 20 has an air passage 22 located on the element portion 11 and an air extraction opening 23 located on the opposite side of the glue layer 20 from the air passage 22, so that after the element portion 11 is turned over and pressed onto the substrate 30 in step S3, the two air extraction openings 23 located on opposite sides of the glue layer 20 can be overlapped to form the opening of the sealing bag. The air channel 22 may be aligned with a scribe line space on the substrate 30, typically in a region of the substrate 30 between two chips 40 in an adjacent package configuration for singulation, particularly after step S3. One end of the air passage 22 is connected to the air extraction opening 23, and in step S3, after the element portion 11 is turned over and pressed against the substrate 30, the air passage 22 is connected to the sacrificial portion 12, so that air in the package bag is extracted in step S42.
Referring to fig. 5 again, the substrate 30 is disposed at the middle portion of the sacrificial portion 12, and the substrate 30 is not large enough to cover the sacrificial portion 12 completely. The chips 40 are arranged on the substrate 30 in a linear or array manner, and the straight line of the air passages 22 is located in the gap between the chips 40, so as to ensure that the adhesive layer 20 can be attached to the entire upper surface of the chips 40 in step S3.
Referring to fig. 5 and 6 again, a top view of the film for sealing and blocking moisture after the element portion 11 is turned over and pressed on the substrate 30 is shown, and at this time, the substrate 30 and the chip 40 are accommodated between the sacrificial portion 12 and the element portion 11. In step S41, after the adhesive layer 20 is partially cured at the peripheral portion of the periphery of the element portion 11, a package is formed with the air suction port 23 as an opening.
Referring to fig. 7 again, a schematic cross-sectional view along line A-A in fig. 6 is shown, the element portion 11 is turned over and pressed onto the substrate 30, i.e. the film for packaging moisture-blocking is folded in half, and then a multi-layer structure of the film for packaging moisture-blocking is formed. The outer two layers are the membrane monomers, and the inner surfaces of the membrane monomers are opposite; the second middle two layers are the bonding layers 20, and the periphery of the sacrificial portion 12 may be provided with a lower bonding layer 20, but the lower bonding layer 20 does not adhere to the lower surface of the substrate 30. The lower surface of the substrate 30 may be directly attached to the inner surface of the lower film body 10, and the upper surface of the substrate 30 is attached by the upper adhesive layer 20. The peripheral side of the substrate 30 may form a hollow gap with the adhesive layer 20, the air passage 22 is located on the upper surface of the substrate 30, and the air extraction opening 23 is communicated with the air passage 22 and the gap between the substrate 40 and the sacrificial portion 12, so as to extract air in the packaging bag.
Referring to fig. 7, the adhesive layer 20 has a plurality of spacers 21 dispersed therein so that the fluid of the adhesive layer 20 can be uniformly adhered to the inner surface of the element portion 11 when the element portion 11 is turned or tilted. Alternatively, step S42 and step S43 are performed simultaneously, or performed separately.
The implementation principle of the film packaging method in the embodiment of the application is as follows: the substrate 30, on the upper surface of which a plurality of chips 40 have been provided, is placed on the sacrificial portion 12 of the film for packaging and blocking water vapor, and the element portion 11 of the film is turned over and pressed against the substrate 30, so that the adhesive layer 20 of the element portion 11 adheres to the substrate 30 and the chips 40. After the periphery of the substrate 30 is cured, a packaging bag with the air extraction opening 23 as an opening is formed, the air extraction opening 23 is communicated with the air passage 22 and the sacrificial portion 12, air in the packaging bag can be extracted through the air extraction opening 23, and then the gluing layer 20 at the middle part on the element portion 11 is cured, so that the element portion 11 is fully adhered on the substrate 30 and the chip 40. The substrate 30 does not need to have a cavity structure.
Example 2
Referring to fig. 8, the sacrificial part 12 is positioned on the right end surface of the film body 10, and the sacrificial part 12 has a plurality of through-type suction holes 24. Alternatively, the suction holes 24 are arranged in a linear or matrix in the sacrifice part 12.
Referring to fig. 9, the substrate 30 is placed at the middle portion of the sacrificial portion 12, and the substrate 30 does not entirely cover the sacrificial portion 12. The chips 40 are arranged linearly on the substrate 30. In step S2, the sacrificial portion 12 is placed on a suction cup, and after the substrate 30 is placed on the sacrificial portion 12 for sealing the water vapor blocking film, the suction cup sucks the substrate 30 through the suction hole 24, thereby fixing the substrate 30.
Referring to fig. 10 and 11, fig. 10 is a schematic top view showing the element portion 11 turned over and laminated on the substrate 30, and then the film for sealing and blocking water is folded in half, and fig. 11 is a schematic cross-sectional view taken along B-B in fig. 10, wherein the substrate 30 and the chip 40 are accommodated between the sacrifice portion 12 and the element portion 11. In step S41, after the adhesive layer 20 is partially cured at the peripheral portion of the periphery of the element portion 11, a package having a plurality of the suction holes 24 is formed. Referring to fig. 11, when the element portion 11 is turned over and laminated on the substrate 30, a film for sealing the moisture barrier is folded in half, and then a combination of a multilayer structure is formed. The outer two layers are the membrane monomers, and the inner surfaces of the membrane monomers are opposite; the middle two layers are the bonding layers 20, and the lower bonding layer 20 of the sacrificial portion 12 is not located on the lower surface of the substrate 30. The lower surface of the substrate 30 is directly attached to the inner surface of the lower film body 10 (corresponding to the sacrificial portion 12) in a non-adhesive or weak adhesive manner, and the upper surface of the substrate 30 is attached to the upper adhesive layer 20. The periphery of the substrate 30 is hollowed out, and the air suction holes 24 penetrate through the sacrificial portion 12 of the lower layer of the film body 10 to suck the air in the packaging bag.
Referring to fig. 11 in the preferred embodiment, a plurality of spacer beads 21 are dispersed in the adhesive layer 20, so that the fluid of the adhesive layer 20 can be uniformly adhered to the inner surface of the element portion 11 when the element portion 11 is turned or tilted.
Alternatively, step S42 and step S43 are performed simultaneously, or performed separately.
The implementation principle of the film packaging method in the embodiment of the application is as follows: compared with the first embodiment, the difference of this embodiment is that the air passage 22 and the air suction opening 23 can be omitted, and the air suction hole 24 penetrating the sacrificial portion 12 of the film is provided on the sacrificial portion 12, and the sacrificial portion 12 is placed on the suction cup, so that not only the air in the packaging bag can be sucked, but also the substrate 30 can be sucked, and the substrate 30 can be further fixed.
Referring to fig. 12, the embodiment of the present application further discloses a semiconductor thin film package structure, based on a thin film implementation for packaging water vapor barrier as described above, comprising: a substrate 30, a dicing unit 60 for packaging the element portion 11 of the water vapor barrier film, and a plurality of solder balls 50. The upper surface of the substrate 30 is provided with a chip 40; the dicing unit 60 of the element portion 11 substantially covers the upper surface of the substrate 30, the dicing unit 60 includes a monomer film 61 of the film body 10 and a monomer paste 62 of the cured adhesive layer 20, the monomer paste 62 of the adhesive layer 20 is formed on the inner surface of the monomer film 61 of the film body 10, and the monomer paste 62 of the adhesive layer 20 adheres the monomer film 61 of the film body 10 to the substrate 30 and the chip 40; the solder balls 50 are disposed on the lower surface of the substrate 30. The semiconductor thin film package may further include bonding wires, one end of each bonding wire is connected to the upper surface of the chip 40, and the other end of each bonding wire is connected to the upper surface of the substrate 30.
In a preferred example, a plurality of spacer beads 21 with equal spherical diameters are dispersed in the monomer glue 62 of the glue layer 20, the spacer beads 21 are used for defining the minimum thickness of the glue layer 20 after encapsulation, the thickness of the glue layer 20 when being coated is about 1.2 times to 2 times of the spherical diameter of the spacer beads 21, and the spherical diameter of the spacer beads 21 can be 0.8 times to 1.2 times of the thickness of the film body 10. Preferably, the spacer beads 21 have a light diffusion effect so that the light emitting semiconductor thin film package has an initial light diffusion effect; preferably, the dicing die 60 integrally forms an upper surface of the semiconductor thin film package.
In a preferred example, the spacer beads 21 are dispersed in the adhesive layer 20, so that the adhesive layer 20 has an integral agglomeration effect before curing, and when the element part 11 for packaging the film for blocking water vapor is turned over or tilted to drive the adhesive layer 20 to tilt, the glue of the adhesive layer 20 in a liquid state is prevented from flowing to a lower position, so that the glue of the adhesive layer 20 is uniformly distributed on the inner surface of the element part 11; meanwhile, the spacer beads 21 have a light diffusion effect, and the thin film packaging LED chip for packaging and blocking water vapor is used, so that the manufactured semiconductor thin film packaging structure has a light diffusion effect, and a light diffusion film in an LED display screen can be omitted.
In a preferred example, the semiconductor thin film package further includes an under-cut unit for encapsulating the sacrificial portion 12 of the water vapor blocking thin film, which is located under the substrate 30, and has a plurality of ball holes (not shown) to fit the solder balls 50. The ball holes may be changed from the suction holes 24 of other embodiments, so that the suction holes 23 may be omitted, and the solder balls 50 may be protected. The lower cutting monomer of the sacrificial part 12 of the film can be reserved before the surface of the upper plate is jointed with the semiconductor film packaging structure, so that the simplification function of eliminating the image generalization of the air suction opening and the air passage of the design cementing layer 20 is realized in the process, the function of protecting the solder balls 50 is realized in the process, and the solder balls 50 are not easy to touch and fall off before the upper plate.
Therefore, the implementation principle of the semiconductor thin film package structure in the embodiment of the application is as follows: the film for sealing and blocking the water vapor is adhered on the substrate 30 and the chip 40, so that the film for sealing and blocking the water vapor becomes a packaging surface layer of the semiconductor film packaging structure, the film for sealing and blocking the water vapor replaces a molding compound packaging body or a ceramic packaging cover with a cavity structure in the traditional semiconductor packaging structure, the volume of the semiconductor packaging structure can be synchronously reduced, and the cutting monomers 60 of the element part 11 for sealing and blocking the film for blocking the water vapor synchronously equals to the size of the substrate 30 in terms of size, and no additional mold and cover are required to be designed so as to meet the requirements of miniaturized modern electronic products.
The foregoing are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in any way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (7)
1. A semiconductor packaging film for packaging a moisture-blocking film, comprising:
a film body (10) having an element portion (11) and a sacrificial portion (12) integrally connected, the element portion (11) being capable of being turned over and being covered on the sacrificial portion (12) by pressure, the element portion (11) and the sacrificial portion (12) each having an inner surface and a corresponding outer surface, a portion of the outer surface of the element portion (11) being used to constitute an exposed upper surface of a semiconductor thin film package structure, the sacrificial portion (12) being used to temporarily protect a bottom surface of a substrate (30) during a packaging process;
a cured adhesive layer (20) formed on the inner surface of the element portion (11) of the film body (10), wherein the adhesive layer (20) is thermosetting or photo-curing, and is used as a part of a semiconductor film packaging structure to bond a substrate (30) and a chip (40) of the semiconductor film packaging structure, wherein the substrate (30) is placed in the middle of a sacrificial portion (12) of the film, a plurality of chips (40) are arranged on the upper surface of the substrate (30), the adhesive layer (20) is not arranged in the middle of the sacrificial portion (12), and the lower surface of the substrate (30) and the film keep a non-adhesive or weak adhesive relationship;
the film body (10) can block water and gas, is used for transmitting light, has electrical insulation property and thermal stability, and is free from the influence of the process temperature when the semiconductor chip is packaged, and the film body (10) keeps the film solid state; the adhesive layer (20) has no adhesion at normal temperature or in the absence of light, and has adhesion under heating, pressurizing or light.
2. The semiconductor packaging film for packaging moisture-blocking according to claim 1, wherein a plurality of spacer beads (21) are dispersed in the adhesive layer (20) so that the fluid of the adhesive layer (20) can be uniformly adhered to the inner surface of the element portion (11) when the element portion (11) is turned or tilted.
3. A method of film encapsulation comprising:
s1, providing the semiconductor packaging film for packaging and blocking water vapor according to the method of claim 1;
s2, placing a substrate (30) on the sacrificial part (12) of the film, wherein a chip (40) is arranged on the upper surface of the substrate (30);
s3, overturning the element part (11) and covering and pressing the element part on the substrate (30) so that the bonding layer (20) is attached to the substrate (30) and the chip (40);
s4, curing the adhesive layer (20) so that the element part (11) of the film is adhered to the substrate (30) and the chip (40);
s5, cutting the film at the side edge, so that the element part (11) and the sacrifice part (12) of the film are not integrally connected any more, and the sacrifice part (12) is peeled off;
s6, arranging a plurality of solder balls (50) on the bottom surface of the substrate (30);
s7, cutting the substrate (30) and the element part (11) in a singulation way to form a plurality of semiconductor film packaging structures;
step S6 is performed between step S5 and step S7, or performed in step S2 in advance.
4. The thin film encapsulation method according to claim 3, wherein step S4 includes:
s41, patterning and partially curing the peripheral part of the gluing layer (20) at the periphery of the element part (11) to form a packaging bag;
s42, extracting air in the packaging bag;
s43, curing the middle part of the gluing layer (20) on the element part (11) so that the element part (11) is adhered on the substrate (30) and the chip (40).
5. The film packaging method according to claim 4, wherein the adhesive layer (20) has an air passage (22) on the element portion (11) and an air extraction opening (23) on the sacrificial portion (12) for extracting air in step S42.
6. The film encapsulation method according to claim 4, wherein the sacrificial portion (12) has a plurality of through-type suction holes (24) for fixing the substrate (30) in step S2 and sucking air in step S42.
7. The method of claim 4, wherein step S42 and step S43 are performed simultaneously or separately.
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| CN117511426A (en) | 2024-02-06 |
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