CN103360971A - Adhesive sheet for manufacturing semiconductor device and manufacturing method of semiconductor device - Google Patents
Adhesive sheet for manufacturing semiconductor device and manufacturing method of semiconductor device Download PDFInfo
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- CN103360971A CN103360971A CN2013100953648A CN201310095364A CN103360971A CN 103360971 A CN103360971 A CN 103360971A CN 2013100953648 A CN2013100953648 A CN 2013100953648A CN 201310095364 A CN201310095364 A CN 201310095364A CN 103360971 A CN103360971 A CN 103360971A
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- semiconductor device
- adhesive layer
- bonding sheet
- resin
- lead frame
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention relates to an adhesive sheet for manufacturing a semiconductor device, a semiconductor device, and a manufacturing method of semiconductor device. The adhesive sheet for manufacturing a semiconductor device comprises a base material and an adhesive layer which disposed on a side of the base material and which contains fluorinated additives and is pasted detachably on a lead frame (20) or a layout substrate of the semiconductor device. The adhesive sheet (10) for manufacturing a semiconductor device is characterized in that the surface fluorine recovery rate of the adhesive layer obtained according to a following formula (I) is over 70%, formula (I): the surface fluorine recovery rate (%) = recovered surface fluorine recovery rate [alpha]/initial surface fluorine recovery rate [beta]*100.
Description
The cross reference of related application
The application based on and require to be willing in the Japanese patent application laid that on March 26th, 2012 submitted to 2012-70403 number benefit of priority, its full content is hereby expressly incorporated by reference.
Technical field
The present invention relates to the semiconductor device manufacturing manufacture method of bonding sheet and semiconductor device.
Background technology
In recent years, along with miniaturization and the multifunction of the electronicss such as pocket pc, mobile telephone, except the miniaturization of the electronic unit of pattern of wants electronics and highly integrated, also need the high-density installation technology of electronic unit.Compact package) etc. four side pin flat package) or SOP(Small Outline Package chip size packages) etc. in this case, CSP(Chip Scale Package that can high-density installation: the semiconductor device of surface installing type replaces QFP(Quad Flat Package:: the semiconductor device of peripheral mount type receives people's concern.And in CSP, QFN(Quad Flat Non-leaded especially: four sides are without the pin flat package) encapsulation, owing to can utilize the manufacturing of existing semiconductor device manufacturing technology, therefore comparatively preferred.Therefore, the QFN encapsulation is main as the following few terminal semiconductor device of 100 pins.
Manufacture method as the QFN encapsulation mainly discloses following methods.At first, in pasting operation, paste bonding sheet in the one side of lead frame.Then, in the die bonding operation, load respectively the semiconductor elements such as IC chip at a plurality of semiconductor element loading parts (wafer pad section) that are formed on the lead frame.Then, in silk bonding (wire bonding(wire bonding)) in the operation, by bonding wire (bonding wire(bonding wire)) be electrically connected along a plurality of lead-in wires and the semiconductor element of each semiconductor element loading part periphery configuration of lead frame.Then, in sealing process, utilize sealing resin to seal the semiconductor element that is loaded on the lead frame.Afterwards, in stripping process, peel off described bonding sheet from lead frame.By above-mentioned operation, can form the QFN unit that is arranged with a plurality of QFN encapsulation.At last, in cutting action, along the periphery cutting QFN unit of each QFN encapsulation.By these operations, can produce a plurality of QFN encapsulation.
At present, in the manufacture method of QFN encapsulation, adopted the semiconductor device manufacturing bonding sheet of use silicone resin tackiness agent or vinylformic acid (ester) resin tackiness agent.But, if use these semiconductor device manufacturing bonding sheets, the problem that resin is revealed (mould flash) then might appear in sealing process.
In addition, the operation (plasma cleaning operation) carry out Cement Composite Treated by Plasma is set before the silk bond sequence usually, is attached to semiconductor element and the impurity on the lead frame surface for example thereby remove, with further a raisings bonding performance.But when using existing semiconductor device manufacturing to use bonding sheet, the semiconductor device manufacturing is removed and is roughened owing to plasma with the face top layer of exposing of the binding agent of bonding sheet.As a result, when bonding sheet is used in the stripping semiconductor manufacturing, binding agent might occur transfer to the splicing ear of semiconductor device or the phenomenon on sealing resin surface (below be denoted as " viscosity transfer ").When such viscosity transfer occured, binding agent adhered to the part of sealing resin sealing or near the external connection terminals part of the lead-in wire it.Therefore, the problems such as bad connection when being installed on circuit board etc., the semiconductor device with manufacturing occur sometimes.
For such problem, proposed to comprise that containing heat-curing resin composition, thermoplastic resin composition and fluorine is that the semiconductor device manufacturing of adhesive layer of additive is with bonding sheet (for example, patent documentation 1).According to patent documentation 1, even do not carry out plasma treatment, also can realize good silk bonding performance, therefore can reduce the viscosity branch problem that plasma treatment is brought.
But, in the invention of patent documentation 1, although can reduce the viscosity branch problem, have the strong and problem that is difficult to peel off of cohesive strength to sealing resin.And in the manufacture method that comprises the plasma clearing process, requiring to have can be strippable separability with less peeling force with bonding sheet in the semiconductor device manufacturing.
The prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2007-123710 communique
Summary of the invention
The object of the present invention is to provide a kind of semiconductor device manufacturing bonding sheet with good separability.
Semiconductor device manufacturing of the present invention comprises base material with bonding sheet and is located on the one side of described base material and contains the adhesive layer of fluorochemical additive, and can stick on the lead frame or wiring substrate of semiconductor device with peeling off, wherein, the surperficial fluorine return rate obtained according to following (I) formula of described adhesive layer is more than 70%.
Surface fluorine return rate (%)=recovery rear surface fluorine containing ratio α ÷ initial surface fluorine containing ratio β * 100 ... (I)
In (I) formula, restore rear surface fluorine containing ratio α and be the Cement Composite Treated by Plasma of adhesive layer being carried out with the output condition of 450W 1 minute under ar gas environment, then with the fluorine containing ratio (atom%) of adhesive layer on the surface of the adhesive layer of 220 ℃ of lower heating after 15 minutes, initial surface fluorine containing ratio β is the fluorine containing ratio (atom%) that carries out the surface of the front adhesive layer of described Cement Composite Treated by Plasma.
Described recovery rear surface fluorine containing ratio α is preferably more than 18atom%.
The manufacture method of semiconductor device of the present invention is the manufacture method that the semiconductor device of bonding sheet is used in the semiconductor device manufacturing of use the invention described above, it is characterized in that, comprising: paste the stickup operation that bonding sheet is used in described semiconductor device manufacturing at lead frame or wiring substrate; Described lead frame or described wiring substrate are carried out the plasma cleaning operation of Cement Composite Treated by Plasma; Heating process at the described adhesive layer of described plasma clearing process post-heating; And after described heating process, peel off the stripping process that bonding sheet is used in described semiconductor device manufacturing from described lead frame or described wiring substrate.
The invention effect
Semiconductor device manufacturing of the present invention has good separability with bonding sheet.
Description of drawings
Fig. 1 is the vertical view that an example of the lead frame that uses in the manufacture method of semiconductor device of the present invention is shown.
Fig. 2 is the process picture sheet be used to an example of the manufacture method that semiconductor device of the present invention is described.
Embodiment
Below, to applicable bonding sheet of the present invention and use the example of manufacture method of the semiconductor device of this bonding sheet to be elaborated.But the present invention not only is defined in following example.Can add without departing from the spirit and scope of the present invention, omit, change, replace or other changes.
Semiconductor device manufacturing of the present invention bonding sheet (below, sometimes only be called bonding sheet) can strippingly stick on the lead frame or wiring substrate of semiconductor device.Namely, be the sheet material that a kind of bonding rear utilization power to a certain degree can easily be peeled off.
Lead frame refers to metal sheet is carried out etching or punching press etc. and is formed with the lead frame of conductive pattern.Wiring substrate refers to utilize conductive material to form the substrate of conductive pattern on the surface (maybe might comprise internal surface) of electrical insulating property substrate.
Bonding sheet of the present invention comprises base material and is located at adhesive layer on the one side of described base material.
Can select arbitrarily base material.Be preferably and have stable on heating base material, such as heat-resistant resin film or tinsel etc.
When using bonding sheet to make the semiconductor device of QFN encapsulation etc., in the operations such as die bonding operation, silk bond sequence, sealing process, bonding sheet is exposed in 150 ℃～250 ℃ the high temperature.When using heat-resistant resin film as base material, the thermal expansivity of described thermotolerance film sharply increases when its second-order transition temperature (Tg) is above, and the thermal expansion difference between the metal lead frame becomes large.Therefore, when returning room temperature, might produce warping phenomenon on thermotolerance film and the lead frame.In addition, when thermotolerance film and lead frame generation warpage, at sealing process, lead frame can't be installed in the steady brace of mould (die and mold), sometimes cause the bad phenomenon such as dislocation.
Thereby, when using the thermotolerance film as base material, preferably use second-order transition temperature at the thermotolerance film more than 150 ℃, be more preferably second-order transition temperature more than 165 ℃, more preferably more than 180 ℃.Can select arbitrarily the higher limit of second-order transition temperature.And, the temperature the when second-order transition temperature of base material preferably is higher than high temperature in the above-mentioned operation.
And, be preferably 5ppm/ ℃～50ppm/ ℃ as the thermal expansivity under 150 ℃～250 ℃ of the thermotolerance film of base material, be more preferably 8ppm/ ℃～40ppm/ ℃, more preferably 10ppm/ ℃～30ppm/ ℃.Has the thermotolerance film of such characteristic such as the film that has polyimide, polymeric amide, polyethersulfone, polyphenylene sulfide, polyetherketone, polyether-ether-ketone, cellulosetri-acetate and/or polyetherimide etc. to consist of.
And, when using tinsel as base material, for the reason identical with described thermotolerance film, the thermal expansivity under 150 ℃～250 ℃ of tinsel is preferably 5ppm/ ℃～50ppm/ ℃, be more preferably 8ppm/ ℃～40ppm/ ℃, more preferably 10ppm/ ℃～30ppm/ ℃.As metal, the paper tinsel, the Alloy Foil take these metals as main component or its plating paper tinsel that are made of gold and silver, copper, platinum, aluminium, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, zinc, palladium, indium or tin are for example arranged.
When using bonding sheet of the present invention to make semiconductor device, in order to prevent in the stripping process described later that viscosity shifts, ratio (bond strength ratio) Sa/Sb of the bond strength Sa of base material and adhesive layer and the bond strength Sb of sealing resin and lead frame or wiring substrate and adhesive layer is preferably more than 1.5.
When Sa/Sb less than 1.5 the time, easily produce the viscosity transfer phenomena in the bonding sheet stripping process.In addition, for make bond strength than Sa/Sb more than 1.5, when using the thermotolerance film, before forming adhesive layer, preferably processing such as corona treatment, Cement Composite Treated by Plasma, linging processing, sandblast for the bond strength Sa that improves thermotolerance film and adhesive layer are carried out on the surface of a side of the formation adhesive layer of thermotolerance film in advance.And, when using tinsel, according to its manufacture method, can be divided into extruded metal paper tinsel and electrolytic metal paper tinsel, but for make bond strength than Sa/Sb more than 1.5, preferably use the electrolytic metal paper tinsel, simultaneously at its roughened side surface adhesive layer adjustment is set.And, especially preferably use electrolytic copper foil in the electrolytic metal paper tinsel.In addition, can measure bond strength by using tensile testing machine etc. to peel off bonding sheet from the end of test film (sample before the heating).
The thickness of base material can be selected arbitrarily, and consideration material etc. is determined.For example, can be the thickness of 10 μ m～100 μ m.
Adhesive layer comprises fluorochemical additive, and surperficial fluorine return rate described later is more than 70%.If surperficial fluorine return rate then can be brought into play good separability more than 70%.
Adhesive layer can be the adhesive layer that contains fluorochemical additive and lead frame or circuit board are had optional bond strength.The adhesive layer that contains fluorochemical additive and resin is for example arranged.
Can select arbitrarily fluorochemical additive.Such as the sulfonate that contains perfluoroalkyl, the anion surfactants such as carboxylate salt that contain perfluoroalkyl, perfluoroalkyl alkylene oxide affixture are arranged, contain fluorine-based and lipophilicity base oligopolymer, contain fluorine-based and wetting ability base oligopolymer, contain the fluorochemical surfactants such as the nonionogenic tensides such as oligopolymer of fluorine-based and wetting ability base and lipophilicity base etc.Wherein, be preferably nonionogenic tenside, be more preferably and contain oligopolymer fluorine-based and the lipophilicity base.Anion surfactant is subject to static behaviour by Ionized functional group and interacts in resin, thereby the degree of freedom of tensio-active agent descends, and is difficult to appear at the surface.Can select arbitrarily the lipophilicity base, such as alkyl, allyl group, vinyl, alkane ether, carbalkoxy and acrylate-based etc. are arranged.These fluorochemical additives can a kind of independent use, can also be used in combination.
The fluorochemical additive that mixes can be liquid, can also be solid.For the viewpoint of the surperficial fluorine return rate that improves adhesive layer and raising separability, the preferred material that uses at 25 ℃ of lower liquid.
As preferred fluorochemical additive, such as メ ガ Off ァ ッ Network F-552, F-554, the manufacturing of F-558(DIC Co., Ltd. that contains the oligopolymer of fluorine-based and lipophilicity base in the conduct of 25 ℃ of lower liquid arranged) etc.
Can suitably determine according to the kind of the kind of fluorochemical additive, resin and amount etc. the content of the fluorochemical additive in the adhesive layer.For example, in adhesive layer, its content is preferably 0.5 quality % to 20 quality %, be more preferably 0.7 quality % to 15 quality %, more preferably 1 quality % to 10 quality % further is preferably 1 quality % to 7 quality %, is particularly preferably 2.5 quality % to 5.0 quality %.If be less than above-mentioned lower value, then can reduce separability, if surpass above-mentioned higher limit, then bond strength is inadequate, not fully problem of the front bond strength of the decline of mould flash characteristic or curing described later might occur.
Can select arbitrarily the resin in the adhesive layer, thermoplastic resin or heat-curing resin are for example arranged.
Example as thermoplastic resin has the resins such as polyhutadiene, polyacrylonitrile, polyvinyl butyral acetal, polymeric amide, polyamidoimide, polyimide, polyester, urethane and vinylformic acid (ester) rubber.Wherein, be preferably the reactive elastomerics that has reflecting point at main chain.
Reactive elastomerics has the functional groups such as carboxyl, amino, vinyl, epoxy group(ing), perhaps has acid anhydrides at side chain.Thereby, have reactivity.Such as when making elastic resin etc., by making the monomer copolymerization with functional group, thereby make reactive elastomerics.And, have the elastic resin etc. of the unsaturated link(age) such as ethylenic linkage (vinyl bond) in manufacturing after, import the functional groups such as epoxy group(ing) to unsaturated link(age)s such as this vinyl, so also can produce reactive elastomerics.In addition, as the monomer with functional group, such as having vinylformic acid, methacrylic acid etc. to have ethylenic linkage and functional group's monomer.
Reactive elastomerics is such as the styrene-ethylene-butylene-styrene multipolymers (SEBS) such as styrene-ethylene-butylene-styrene multipolymer that carboxylic styrene-ethylene-butylene-styrene multipolymer arranged and contain maleic anhydride; The styrene-butadiene copolymers such as carboxylic styrene-butadiene copolymer, the styrene-butadiene copolymer that contains maleic anhydride and carboxylic styrene butadiene saturated copolymer; The styrene-isoprene copolymers such as carboxylic styrene-isoprene copolymer and carboxylic styrene-isoprene saturated copolymer; The styrenic thermoplastic elastomers such as styrene-ethylene-butylene copolymer that contain the styrenic block copolymer of epoxy group(ing) and contain maleic anhydride; The acrylonitrile butadiene copolymers such as carboxylic acrylonitrile butadiene copolymer (NBR) of carboxylic acrylonitrile butadiene copolymer, amino modified acrylonitrile butadiene copolymer, hydrogenation; Amino modified polyol resin, amino modified phenoxy resin, polyvinyl butyral resin, polyvinyl acetal resin, carboxylic vinylformic acid (ester) rubber, the saturated copolymer polyester resin of terminal hydroxy group, end carboxyl saturated copolymer vibrin etc.Wherein, for viewpoints such as thermotolerances, preferably use the styrenic thermoplastic elastomer, be more preferably SEBS.In addition, " contain maleic anhydride " and be illustrated in side chain and have acid anhydrides.
Above-mentioned thermoplastic resin can a kind of independent use, can also be used in combination.
In addition, as thermoplastic resin, can also use fluorine-containing thermoplastic resin (fluorine-containing thermoplastic resin)
As heat-curing resin, be useful at present the resin of adhesive layer, arbitrarily choice for use.For example, urea resin, melamine resin, benzoguanamine resin, acetylguanamine resin, resol, resorcinol resin, xylene resin, furane resin, unsaturated polyester resin, diallyl phthalate resin, isocyanate resin, Resins, epoxy, maleimide resin, nanotesla imide (nadimide) resin etc.Can use separately these heat-curing resins, can also be used in combination.
And, can also use fluorine-containing heat-curing resin (fluorine-containing heat-curing resin) as heat-curing resin.
Preferably use reactive elastomerics or heat-curing resin as the resin in the adhesive layer, be more preferably and use reactive elastomerics.With these resins and solidifying agent and usefulness, thereby improve separability, and improve mould flash characteristic.
The content of the resin in the adhesive layer can be determined according to the kind of resin etc.For example, be preferably 80 quality % to 98 quality %, be more preferably 85 quality % to 95 quality %.When less than above-mentioned lower value, bond strength is abundant not, reduces mould flash characteristic, and when surpassing above-mentioned higher limit, the content of fluorochemical additive is very few, reduces separability.
Can select arbitrarily the reactive elastomeric content in the resin, for example, be preferably more than the 50 quality %, be more preferably more than the 65 quality %, more preferably more than the 80 quality %.
When using reactive elastomerics or heat-curing resin as resin, can also mixed curing agent in the adhesive layer.
As solidifying agent, can suitably determine according to the kind of reactive elastomerics or heat-curing resin, such as polymeric polyisocyanate etc. is arranged.
Can suitably determine according to the kind of solidifying agent, reactive elastomerics or heat-curing resin the content of the solidifying agent in the adhesive layer.For example, preferably contain 0.5 mass parts to 10 mass parts with respect to resin 100 mass parts.As required, for example preferably contain 1 mass parts to 8 mass parts or 2 mass parts to 7 mass parts.
And in the scope that does not affect effect of the present invention, adhesive layer can also contain the arbitrarily composition such as curing catalyst or antioxidant.Can select arbitrarily its content, for example, with respect to resin 100 mass parts, preferably use 0.5 mass parts to 10 mass parts, be more preferably and use 1 mass parts to 8 mass parts or 2 mass parts to 7 mass parts.
The surperficial fluorine return rate of obtaining according to following (I) formula of adhesive layer is preferably more than 70%.
The surperficial fluorine return rate of adhesive layer is more preferably at more than 80% preferably more than 70%, further preferably more than 85%, especially preferably more than 90%, even also can more than 100%.If surface fluorine return rate then can be brought into play good separability more than above-mentioned lower value.And, if surface fluorine return rate more than above-mentioned lower value, then need not to mix too much fluorine-containing additive to adhesive layer, bond strength is suitable before therefore solidifying, in the stickup operation lead frame or circuit board are had sufficient adhibit quality, so operability is good.
In addition, regulate surperficial fluorine return rate by kind or the amount of the combination kind of fluorochemical additive or amount, resin.
Surface fluorine return rate (%)=recovery rear surface fluorine containing ratio α ÷ initial surface fluorine containing ratio β * 100 ... (I)
［ in (I) formula, restore rear surface fluorine containing ratio α and be the Cement Composite Treated by Plasma of adhesive layer being carried out with the output condition of 450W 1 minute under ar gas environment, then with the fluorine containing ratio (atom%) of adhesive layer on the surface of the adhesive layer of 220 ℃ of lower heating after 15 minutes, initial surface fluorine containing ratio β is the fluorine containing ratio (atom%) that carries out the surface of the front adhesive layer of described Cement Composite Treated by Plasma.］
Recovery rear surface fluorine containing ratio α preferably more than 18atom%, is more preferably at more than the 20atom%.If less than above-mentioned lower value, then might reduce the separability of bonding sheet.
Initial surface fluorine containing ratio β preferably below 50atom%, is more preferably at below the 30atom%.If surpass above-mentioned higher limit, bond strength is abundant not before then solidifying, and is reduced in the stickup operation described later adhibit quality to lead frame or circuit board.
In comprising the bonding sheet of adhesive layer of the present invention, for example in the bonding sheet of the adhesive layer that comprises the Thermocurable that contains reactive elastomerics, heat-curing resin and solidifying agent, with respect to the bond strength (bond strength before solidifying) of the adhesive layer under 25 ℃ before the thermofixation of lead frame or circuit board preferably more than 0.05N/20mm.If bond strength even then adhesive layer is not carried out thermofixation, also can stick on lead frame or the circuit board with suitable bond strength more than above-mentioned lower value before solidifying.Therefore, in stickup operation described later, need not the adhesive heating layer, can omit the stickup operation.The upper limit to the bond strength under lead frame or circuit board 25 ℃ is not particularly limited.
Turn up (Tuck), binding property etc. for thermal expansivity, thermal conductivity, the surface of adjusting adhesive layer, can also mix inorganic or organic filler at adhesive layer.Inorganic filler has imported the material of three silyloxies etc. such as the weighting agent that the formations such as crush type silica, fusing type silica, aluminum oxide, titanium oxide, beryllium oxide, magnesium oxide, calcium carbonate, titanium nitride, silicon nitride, boron nitride, titanium boride, tungsten boride, silicon carbide, titanium carbide, zirconium carbide, molybdenum carbide, mica, zinc oxide, carbon black, aluminium hydroxide, calcium hydroxide, magnesium hydroxide and ANTIMONY TRIOXIDE SB 203 99.8 PCT are arranged or to the surface of these materials.And organic filler is such as the weighting agent that has polyimide, polyamidoimide, polyether-ether-ketone, polyetherimide, polyester-imide, nylon and silicone resin etc. to consist of.
Thickness for adhesive layer is not particularly limited, and can select arbitrarily.For example, can be 2 μ m～20 μ m.Preferably, dried thickness is in the scope of 2 μ m～10 μ m.
Bonding sheet can form at adhesive layer and be pasted with strippable protective membrane, peels off protective membrane before affixing to lead frame or wiring substrate etc.At this moment, prevent adhesive layer produce bonding sheet play use bonding sheet during impaired.
Namely can be used as protective membrane so long as have the film of release property.For example, the film such as polyester, polyethylene, polypropylene, polyethylene terephthalate or use silicone resin or fluorine cpd carry out film that the demoulding processes etc. to the surface of these films.
Can select arbitrarily the manufacture method of bonding sheet, be preferably and behind coated with adhesive on the base material, carry out dry casting, perhaps temporarily with adhesive coated on releasable film, be transferred to laminating on the base material etc. after the drying.In addition, the composition that preferably will consist of adhesive layer is dissolved in the independent thing or its mixture of selecting in the group of the formations such as organic solvent, the non-proton class polar solvent such as ketone, dimethyl formamide, N,N-DIMETHYLACETAMIDE, N-Methyl pyrrolidone etc. such as the fragrant same clan such as toluene, dimethylbenzene, chlorobenzene, acetone, methyl ethyl ketone, methyl iso-butyl ketone (MIBK) and tetrahydrofuran (THF), as adhesive coated liquid.
Use the method for making semiconductor of bonding sheet of the present invention to be included in the stickup operation of pasting bonding sheet on lead frame or the circuit board; Lead frame or circuit board are carried out the plasma cleaning operation of Cement Composite Treated by Plasma; Heating process at plasma cleaning operation post-heating adhesive layer; And, peel off the stripping process of bonding sheet after the heating process from described lead frame or described circuit board.
Below, use the example of manufacture method of the semiconductor device of bonding sheet of the present invention to describe with reference to Fig. 1～2 pair.Fig. 1 is the lead frame vertical view from the unilateral observation of loading semiconductor element.(a)～(f) of Fig. 2 shows the process picture sheet that uses lead frame shown in Figure 1 to make the method for QFN encapsulation, and is the A-A ' sectional view of the lead frame of Fig. 1.
In addition, in the following description, describe using the bonding sheet that comprises the adhesive layer that contains fluorochemical additive, reactive elastomerics and solidifying agent, the example of making the QFN encapsulation as the stickup object take lead frame.
The manufacture method of semiconductor device of the present invention comprises at least: in the stickup operation of lead frame or circuit board stickup bonding sheet; The plasma cleaning operation; The heating process of adhesive heating layer and the stripping process of peeling off bonding sheet.
In the present embodiment, the manufacture method of the semiconductor device that comprises following operation described: the stickup operation of pasting bonding sheet at lead frame; Load the die bonding operation of semiconductor element at lead frame; Lead frame is carried out the plasma cleaning operation of Cement Composite Treated by Plasma; The silk bond sequence that the lead-in wire of semiconductor element and lead frame is electrically connected; The heating process of the adhesive layer of heating bonding sheet; The sealing process that utilizes sealing resin that semiconductor element is sealed; Thereby peel off the stripping process that bonding sheet obtains the QFN unit from lead frame; Thereby and the cutting action of cutting apart QFN unit acquisition QFN encapsulation.In addition, the heating process of the adhesive layer of heating bonding sheet can be included in the bond sequence.
At first, prepare the lead frame 20 of main composition shown in Figure 1.Array-like is formed with for a plurality of semiconductor element loading parts (wafer pad section) 21 that load the semiconductor element such as IC chip on lead frame 20, and, be formed with a plurality of lead-in wires 22 along the periphery of each semiconductor element loading part 21.
The material of lead frame 20 can be existing known material, arbitrarily choice for use.For example, can use copper alloy plate or set gradually the plate of nickel coating, palladium coating, gold plate on the surface of copper coin.
(stickup operation)
Shown in Fig. 2 (a), be connected to the mode of lead frame 20 the one side of lead frame 20 (below) paste bonding sheet 10(paste operation) with adhesive layer (not shown).Can select arbitrarily bonding sheet 10 is pasted on method on the lead frame 20, preferably use laminating etc.If there is not special problem, such as can under the normal temperature of 5 ℃～35 ℃ of grades, pasting.At this moment, also can be connected under the state of lead frame 20 at adhesive layer, adhesive layer is heated to arbitrary temp.Heating temperature for example can be 50 ℃～100 ℃ or 100 ℃～200 ℃.By heating, adhesive layer is cured, and bonding sheet 10 sticks on lead frame 20 securely.And, when bond strength before the curing of adhesive layer is enough abundant, can also in die bonding operation described later, carry out the processing that heat treated replaces adhesive heating layer in pasting operation, adhesive layer is solidified.In order to improve the productivity of semiconductor device, preferred cured binders layer in the die bonding operation.Heating temperature can preferably be used the said temperature scope.
(die bonding operation)
Shown in Fig. 2 (b), the semiconductor element loading part of the side of not pasting bonding sheet 10 on lead frame 20 21 loads the semiconductor element 30 of IC chip etc. by die adhesive (not shown).Afterwards, be heated to as required the temperature selected, about for example 100 ℃～200 ℃, be preferably about 150 ℃～180 ℃, the curing chip caking agent fixedly is loaded in semiconductor element loading part 21(die adhesive solidification treatment with semiconductor element 30.It more than is the die bonding operation.）。Here, if be heated in pasting operation or die bonding operation, the fluorochemical additive in the adhesive layer is to the surperficial uneven distribution of adhesive layer.
(plasma cleaning operation)
If be attached on lead frame 20 or the semiconductor element 30 from the exhaust gas composition of the generations such as bonding sheet 10 or die adhesive, then in the silk bond sequence, the bad decrease in yield that causes of the joint of lead-in wire.For this reason, after the die bonding operation, before the silk bond sequence, lead frame 20 or semiconductor element 30 are carried out Cement Composite Treated by Plasma (plasma cleaning operation).Cement Composite Treated by Plasma is such as having under the atmosphere of the mixed gas of argon gas or argon gas and hydrogen etc., also is called work in-process to being pasted with bonding sheet 10 and being mounted with below the lead frame 20(of semiconductor element 30) method of irradiation plasma body.Can select arbitrarily the irradiation output of the plasma body in the Cement Composite Treated by Plasma, for example, can be 150W～600W or 300W～600W.And the time of selection Cement Composite Treated by Plasma for example can be 0.01 minute to 5 minutes or 0.5 minute to 5 minutes arbitrarily.
Carried out Cement Composite Treated by Plasma, then in the position that is not covered by lead frame, the upper layer of fluorochemical additive uneven distribution is cut in the adhesive layer, and the amount of the fluorochemical additive on adhesive layer surface reduces.At this moment, on the surface of exposing of adhesive layer, abundant not for the amount of the fluorochemical additive that improves separability, the separability of bonding sheet 10 will descend.
(silk bond sequence)
Shown in Fig. 2 (c), the lead-in wire 22 of semiconductor element 30 and lead frame 20 is electrically connected (silk bond sequence) by the bonding wires such as spun gold 31.In optional temperature on the heating region, about for example 150 ℃～250 ℃, preferred half-finished this operation of carrying out simultaneously of heating about 190 ℃～250 ℃.For example be 5 minutes to 30 minutes the heat-up time in this operation, is more preferably 8 minutes to 22 minutes.In the present embodiment, can make a bond sequence be also used as the heating process of adhesive heating layer.
In the silk bond sequence, heat work in-process, then be dispersed in the surface that fluorochemical additive in the adhesive layer is transferred to adhesive layer.In the present invention, the surperficial fluorine return rate of adhesive layer is more than 70%.Therefore, the quantitative change of the fluorochemical additive on the surface of adhesive layer is the amount that is enough to improve separability.In addition, in stripping process described later, bonding sheet 10 becomes and easily peels off from lead frame 20 and sealing resin 40.
(sealing process)
Shown in Fig. 2 (d), the work in-process shown in Fig. 2 (c) are configured in the mould, utilize sealing resin (die casting section bar) to carry out die casting molding (transfer molding) (mould molding).Thereby utilize sealing resin 40 sealing semiconductor element 30(sealing process).Can use existing known sealing resin as sealing resin.Such as the mixture that Resins, epoxy and inorganic filler etc. are arranged.
(stripping process)
Shown in Fig. 2 (e), peel off bonding sheet 10 from sealing resin 40 and lead frame 20.Thereby obtain to comprise that a plurality of QFN of arrangement encapsulate 50 QFN unit 60(stripping process).At this moment, there is the fully fluorochemical additive of amount on the surface of adhesive layer, therefore can easily peels off bonding sheet 10 from lead frame 20 and sealing resin 40
(cutting action)
Shown in Fig. 2 (f), along the periphery cutting QFN unit 60 of each QFN encapsulation 50.Thereby a plurality of QFN that obtain to cut apart encapsulate 50.
As mentioned above, utilize the bonding sheet 10 of present embodiment to make the semiconductor devices such as QFN encapsulation, thereby even the plasma clearing process is set, bonding sheet 10 also can easily be peeled off from lead frame 20 and sealing resin 40.Therefore, can increase work efficiency, improve the productivity of semiconductor device, prevent that viscosity from shifting the poor products of the semiconductor device that causes.
In addition, in the above-described embodiment, the example of the manufacture method of the QFN encapsulation of using lead frame is illustrated, but the present invention is not limited thereto.Also be applicable to utilize the QFN of lead frame to encapsulate the manufacture method of outer semiconductor device and the manufacture method of utilizing the semiconductor device of circuit board.
In the above-described embodiment, the silk bond sequence is also used as heating process.But the present invention is not limited thereto.For example, the heating process of adhesive heating layer can be arranged on separately between plasma cleaning operation and the silk bond sequence, perhaps between silk bond sequence and the sealing process etc.
Determining Heating temperature in the heating process according to kind of fluorine cpd etc. etc., for example can be about 150 ℃～250 ℃.And, determine heat-up time in the heating process for example can be 5 minutes to 30 minutes according to kind of fluorochemicals etc.
[embodiment]
Below by embodiment the present invention is described, but the present invention is not limited to these embodiment.
(use raw material)
＜fluorochemical additive 〉
メ ガ Off ァ ッ Network F-554: make as the nonionogenic tenside of the oligopolymer that contains fluorine-based and lipophilicity group, 25 ℃ of lower liquid, Dainippon Ink Chemicals.
ModiperF600(モ デ ィ パ ー F600): the segmented copolymer of methacrylic ester and vinylformic acid fluorinated alkyl esters, 25 ℃ of lower solids (powder), Japan Oil Co make.
＜reactive elastomerics 〉
TUF-TECH M-1943(タ Off テ ッ Network M-1943): the SEBS(that contains maleic anhydride contains the styrene-ethylene-butylene-styrene multipolymer of maleic anhydride), S/EB ratio=20/80, acid number=10mg CH
3ONa/g, Asahi Chemical Corp make.
TUF-TECH M-1911(タ Off テ ッ Network M-1911): the SEBS, S/EB ratio=30/70, the acid number=2mg CH that contain maleic anhydride
3ONa/g, Asahi Chemical Corp make.
＜other resins＞
LUMIFLON LP200F(Le ミ Off ロ Application LP200F): fluorine-containing heat-curing resin, Asahi Glass Co., Ltd make.
＜solidifying agent＞
DURANATE TSA-100(デ ュ ラ ネ ー ト TSA-100): isocyanate, Asahi Chemical Corp make.
＜antioxidant＞
IRGANOX1010FF:BASF company makes.
SUMILIZER GS(F) (ス ミ ラ イ ザ ー GS(F)): Sumitomo Chemical Co makes.
(embodiment 1～3, comparative example 1～4)
According to the composition shown in the table 1, each raw material is scattered in an amount of toluene, modulate respectively adhesive coated liquid.TUF-TECH M-1943 is dissolved in the toluene.
Then, prepared polyimide resin film (Dong Li company of Du Pont makes, trade(brand)name: kapton 100EN, thickness 25 μ m, second-order transition temperature more than 300 ℃, thermal expansivity 16ppm/ ℃) as heat-resistant material.On this heat-resistant material, apply above-mentioned adhesive coated liquid, apply the amount that dried thickness is 5 μ m.After the coated with adhesive coating liquid, drying is 3 minutes under 150 ℃, has obtained the bonding sheet of each example.For the bonding sheet that obtains, surperficial fluorine containing ratio and bond strength have been measured.And, estimated mould flash and viscosity transfer whether occur.In addition, bonding sheet is of a size of long 60mm and wide 50mm.
(measuring method)
＜measurement of surperficial fluorine containing ratio 〉
In adhesive layer mode up the bonding sheet of each example is put into thermostatted (perfect oven PHH-201, Espec Corp. make), 175 ℃ of lower heating 1 hour, adhesive layer is solidified.Measured the surperficial fluorine containing ratio of the adhesive layer that solidifies according to " measuring method of surperficial fluorine containing ratio " described later, with it as initial surface fluorine containing ratio β.Then, in adhesive layer mode up bonding sheet is arranged in the plasma cleaning device (YES-G1000, YIELD ENGINEERING SYSTEM company make), enclose at ar gas environment under (argon gas 100 quality % atmosphere), with the 450W output condition, adhesive layer carried out 1 minute Cement Composite Treated by Plasma.Measured the surperficial fluorine containing ratio that has just carried out the adhesive layer after the plasma treatment according to " measuring method of surperficial fluorine containing ratio " described later, with its surperficial fluorine containing ratio after as Cement Composite Treated by Plasma.
In the adhesive layer mode up of having carried out Cement Composite Treated by Plasma, bonding sheet is placed on hot plate (containing flourish hall in the EC-1200, well makes), 220 ℃ of lower heating 15 minutes.After finishing heating, under 25 ℃, left standstill 24 hours, afterwards, measured the surperficial fluorine containing ratio of adhesive layer according to " measuring method of surperficial fluorine containing ratio " described later, as restoring rear surface fluorine containing ratio α.
" measuring method of surperficial fluorine containing ratio "
The value of utilizing sweep type x-ray photoelectron spectroscopy (XPS/ESCA, Quantera SXM, Ulvac-Phi Co., Ltd. make) to measure the surface of adhesive layer under the condition below and drawing.Surface fluorine containing ratio (atom%) represents with the containing ratio with respect to the total 100atom% of carbon, nitrogen, oxygen, fluorine, silicon and gold.In addition, when measuring the surperficial fluorine containing ratio of each example, all do not detect silicon and gold.
The measuring condition of surface fluorine containing ratio:
X-ray source: monochromatization AlK α
X ray output: 25.0W
X-ray bombardment diameter: φ 100 μ m
Measured zone: Point 100 μ m
Photoelectron acceptance angle: 45deg
WideScan：280.0e；1.000eV/Step
＜measurement of bond strength 〉
Lead frame (32QFN(CD194, the plating of specification below copper coin sets gradually nickel coating, palladium coating, gold plate have been used as lead frame; PD2L+Au) 32LQFNPADSIZE3.0SQMM, Shinko Electric Ind Co make).Utilize scudding knife (paper is pressed the NS type, interior field commercial firm of foreign firm makes), the bonding sheet of each example is cut into 50mm * 60mm.Utilize table top laminators (MAII-700, great achievement laminating machine Co., Ltd. make), under 25 ℃, the condition of speed 1.0m/min, pressure 0.37N/mm, in the tack coat mode relative with lead frame the bonding sheet of cutting is sticked on (stickup operation) on the lead frame.In addition, abundant not for the adhibit quality under 4,25 ℃ of embodiment 3, comparative example 1 and the comparative examples, therefore under 80 ℃, be pasted on lead frame.
The above-mentioned lead frame that is pasted with bonding sheet is imported thermostatted (perfect oven PHH-201, Espec Corp. make), 175 ℃ of lower heating 1 hour, adhesive layer is solidified (being equivalent to the die adhesive solidification treatment in the die bonding operation).
Then, in adhesive layer mode up bonding sheet is arranged in the plasma clearing device (YES-G1000, YIELD ENGINEERING SYSTEM company make), enclose down at ar gas environment, under the 450W output condition adhesive layer carried out 1 minute Cement Composite Treated by Plasma (plasma cleaning operation).
After the plasma cleaning operation, the lead frame that will paste bonding sheet in the mode of downside with bonding sheet is placed on the hot plate (the flourish hall of Sheng is made in EC-1200, the well), 220 ℃ of lower heating 15 minutes (being equivalent to a bond sequence).
After finishing the silk bond sequence, utilize transfer molding press (TEP12-16, rattan and smart machine Co., Ltd. make), under the condition of 175 ℃ of Heating temperatures, resin pressure 69MPa and die pressure 14MPa, utilize sealing resin (KMC-3520L, Shin-Etsu Chemial Co., Ltd make) to seal (sealing process) to the lead frame of having pasted bonding sheet.After the sealing process, under 25 ℃, left standstill 24 hours, afterwards according to " after resin-sealed and the measuring method of bond strength between the lead frame " described later measured after resin-sealed and lead frame between bond strength.
The specification of lead frame
Outside dimension: 55mm * 58mm
Purposes: be used for QFN
The arrangement of QFN: the arrayed of 8 * 8 (adding up to 64)
Package dimension: 5mm * 5mm
Number of pins: 32
" after resin-sealed and the measuring method of bond strength between the lead frame "
Utilize universal tensile testing machine (AGS-100B, Shimadzu Scisakusho Ltd make), carry out test for tensile strength with 90 ° of peel angle and peeling rate 50mm/min measuring under 25 ℃ of the temperature, measured resin-sealed after and the bond strength between the lead frame.
The measuring method of bond strength before solidifying
Utilize table top laminators (MAII-700, great achievement laminating machine Co., Ltd. make), bonding sheet (wide 20mm) with each example under 25 ℃, speed 1.0m/min, pressure 0.37N/mm condition sticks on copper coin (strike plating copper coin ELA601,25mm * 100mm, Shinko Electric Ind Co make), as measuring test portion.Measure test portion for this, utilize universal tensile testing machine (AGS-100B, Shimadzu Scisakusho Ltd make), carry out test for tensile strength with 90 ° of peel angle and peeling rate 50mm/min measuring under 25 ℃ of the temperature, measured solidify before bond strength.In addition, abundant not for the adhibit quality under 3,25 ℃ of the embodiment, therefore will under 80 ℃, be pasted on the copper coin for measuring sample.
＜whether the mould flash occurs 〉
In above-mentioned＜measurement of bond strength 〉, finish after the measurement of bond strength, utilize opticmicroscope (digital micrometer VHX-500, Co., Ltd.'s Keyemce are made) to observe the sticking veneer of the bonding sheet in the lead frame, judge whether to occur mould flash (resin leakage).In table, put down in writing the QFN encapsulation quantity of observing the mould flash in the lead frame (64 QFN encapsulation).
＜viscosity shifts and whether occurs 〉
In above-mentioned＜measurement of bond strength 〉, after the measurement that finishes bond strength, utilize opticmicroscope (digital micrometer VHX-500, Co., Ltd.'s Keyemce are made) to confirm whether resin-sealed rear viscosity is transferred on the lead frame.In table, put down in writing in the lead frame (64 QFN encapsulation) and observed the QFN encapsulation quantity that viscosity shifts.
Table 1
As shown in table 1, in each example, reduced surperficial fluorine containing ratio by carrying out the plasma clearing process.
The bond strength of applicable embodiments of the invention 1～3 after resin-sealed and between the lead frame can easily be peeled off below 15N/50mm.And embodiment 1～3 does not all produce mould flash phenomenon, and the viscosity transfer phenomena does not occur yet.
On the other hand, in surperficial fluorine containing ratio is less than 70% comparative example 1～4, resin-sealed after and the bond strength between the lead frame surpass 15N/50mm, be difficult to peel off.Can know from these results, by applicable the present invention, in stripping process, can bring into play good separability.
As mentioned above, the invention provides the semiconductor device manufacturing bonding sheet with good separability.
Reference numeral
10 semiconductor device manufacturings bonding sheet 20 lead frames
21 semiconductor element loading parts (wafer pad section), 22 lead-in wires
30 semiconductor elements, 31 bonding wires
40 sealing resin 50QFN encapsulation
Claims (17)
1. semiconductor device manufacturing bonding sheet, it comprises base material and is located on the one side of described base material and contains the adhesive layer of fluorochemical additive, and can stick on the lead frame or wiring substrate of semiconductor device with peeling off, described semiconductor device manufacturing is characterised in that with bonding sheet
The surperficial fluorine return rate that described adhesive layer is obtained according to following (I) formula is more than 70%,
Surface fluorine return rate (%)=recovery rear surface fluorine containing ratio α ÷ initial surface fluorine containing ratio β * 100 ... (I)
In (I) formula, restore rear surface fluorine containing ratio α and be the Cement Composite Treated by Plasma of adhesive layer being carried out with the output condition of 450W 1 minute under ar gas environment, then with the fluorine containing ratio of adhesive layer on the surface of the adhesive layer of 220 ℃ of lower heating after 15 minutes, initial surface fluorine containing ratio β is the fluorine containing ratio that carries out the surface of the front adhesive layer of described Cement Composite Treated by Plasma, wherein, the unit of fluorine containing ratio is atom%.
2. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
Described recovery rear surface fluorine containing ratio α is more than 18atom%.
3. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
Initial surface fluorine containing ratio β is below 50atom%.
4. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
Initial surface fluorine containing ratio β is below 30atom%.
5. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
Adhesive layer contains resin, and the content of resin is 80 quality % to 98 quality % in adhesive layer.
6. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
The content of fluorochemical additive is 0.5 quality % to 20 quality % in adhesive layer.
7. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
The content of fluorochemical additive is 2.5 quality % to 5.0 quality % in adhesive layer.
8. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
Described base material is that thickness is that thermal expansivity under 10 μ m～100 μ m and 150 ℃～250 ℃ is heat-resistant resin film or the tinsel of 5ppm/ ℃～50ppm/ ℃.
9. semiconductor device manufacturing bonding sheet according to claim 1 is characterized in that,
Fluorochemical additive be selected from by the sulfonate that contains perfluoroalkyl, the carboxylate salt that contains perfluoroalkyl, perfluoroalkyl alkylene oxide affixture, contain fluoro-containing group and lipophilicity group oligopolymer, contain fluoro-containing group and hydrophilic radical oligopolymer, contain the group that the oligopolymer of fluoro-containing group and hydrophilic radical and lipophilicity group forms.
10. semiconductor device manufacturing bonding sheet according to claim 5 is characterized in that,
Described resin is selected from by polyhutadiene, polyacrylonitrile, polyvinyl butyral acetal, polymeric amide, polyamidoimide, polyimide, polyester, urethane, acrylic rubber, the styrene-ethylene-butylene-styrene multipolymer, carboxylic styrene-ethylene-butylene-styrene multipolymer, the styrene-ethylene-butylene-styrene multipolymer that contains maleic anhydride, styrene-butadiene copolymer, carboxylic styrene-butadiene copolymer, the styrene-butadiene copolymer that contains maleic anhydride, carboxylic styrene butadiene saturated copolymer, styrene-isoprene copolymer, carboxylic styrene-isoprene copolymer, carboxylic styrene-isoprene saturated copolymer, the styrenic block copolymer that contains epoxy group(ing), styrene-ethylene-the butylene copolymer that contains maleic anhydride, acrylonitrile butadiene copolymer, carboxylic acrylonitrile butadiene copolymer, amino modified acrylonitrile butadiene copolymer, hydrogenation contains carboxylated acrylonitrile-butadienecopolymer, amino modified polyol resin, amino modified phenoxy resin, polyvinyl butyral resin, polyvinyl acetal resin, carboxylic acrylic rubber, the saturated copolymer polyester resin of terminal hydroxy group, and the group of end carboxyl saturated copolymer vibrin composition.
11. a semiconductor device is characterized in that,
Comprise bonding sheet claimed in claim 1 and lead frame or wiring substrate.
12. semiconductor device according to claim 11 is characterized in that,
The ratio of the bond strength Sb of the bond strength Sa of base material and adhesive layer and sealing resin and lead frame and adhesive layer or sealing resin and wiring substrate and the bond strength Sb of adhesive layer is more than 1.5.
13. the manufacture method of a semiconductor device, it is characterized in that, the manufacture method of described semiconductor device is to have used claim 1 or the 2 described semiconductor device manufacturings manufacture method of the semiconductor device of bonding sheet, and the manufacture method of this semiconductor device comprises:
Paste the stickup operation that bonding sheet is used in described semiconductor device manufacturing at lead frame or wiring substrate;
Described lead frame or described wiring substrate are carried out the plasma cleaning operation of Cement Composite Treated by Plasma;
Heating process at the described adhesive layer of described plasma clearing process post-heating; And
After described heating process, peel off the stripping process that bonding sheet is used in described semiconductor device manufacturing from described lead frame or described wiring substrate.
14. the manufacture method of semiconductor device according to claim 13 is characterized in that,
Between stickup operation and plasma cleaning operation, comprise:
The operation of configuring semiconductor element on a side surface of not pasting bonding sheet of lead frame or wiring substrate,
Between plasma cleaning operation and stripping process, comprise:
Semiconductor element is connected the connection operation that wiring substrate utilizes bonding wire to be electrically connected with lead frame; And
Utilize the sealing process of sealing resin sealing semiconductor element.
15. the manufacture method of semiconductor device according to claim 13 is characterized in that,
The plasma cleaning operation is to carry out under 0.01 minute to 5 minutes the condition in the time that the irradiation of plasma body is output as 150W～600W, Cement Composite Treated by Plasma.
16. the manufacture method of semiconductor device according to claim 13 is characterized in that,
In heating process, at 150 ℃～250 ℃ lower heating 5min～30min.
17. the manufacture method of semiconductor device according to claim 14 is characterized in that,
Heating process is carried out in described connection operation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012070401A JP5937397B2 (en) | 2012-03-26 | 2012-03-26 | Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device |
| JP2012-070401 | 2012-03-26 |
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| CN103360971A true CN103360971A (en) | 2013-10-23 |
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| JP (1) | JP5937397B2 (en) |
| KR (1) | KR101485659B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106281190A (en) * | 2016-08-29 | 2017-01-04 | 无锡万能胶粘剂有限公司 | The glue spraying that a kind of bonding force is strong |
| CN108300368A (en) * | 2016-09-12 | 2018-07-20 | 稳懋半导体股份有限公司 | The manufacturing method thereof of anti-plasma-based adhesive tape and semiconductor packages |
| CN113613897A (en) * | 2019-03-26 | 2021-11-05 | 琳得科株式会社 | Release sheet |
| CN117511426A (en) * | 2024-01-05 | 2024-02-06 | 深圳市长松科技有限公司 | Film for packaging and blocking water vapor, semiconductor film packaging method and structure |
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| WO2019187247A1 (en) * | 2018-03-30 | 2019-10-03 | リンテック株式会社 | Warpage prevention laminate for cured sealing body and method for producing cured sealing body |
| JP7240378B2 (en) * | 2018-03-30 | 2023-03-15 | リンテック株式会社 | Laminate for preventing warp of cured sealant, and method for manufacturing cured sealant |
| JP7187906B2 (en) * | 2018-09-10 | 2022-12-13 | 昭和電工マテリアルズ株式会社 | Semiconductor device manufacturing method |
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| CN1452227A (en) * | 2002-04-03 | 2003-10-29 | 株式会社巴川制纸所 | Binding sheet for mfg. semiconductor device |
| CN1847347A (en) * | 2005-03-30 | 2006-10-18 | 株式会社巴川制纸所 | Adhesive sheet for pfoducing semiconductor device, semiconductor device and method for manufacturing same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106281190A (en) * | 2016-08-29 | 2017-01-04 | 无锡万能胶粘剂有限公司 | The glue spraying that a kind of bonding force is strong |
| CN108300368A (en) * | 2016-09-12 | 2018-07-20 | 稳懋半导体股份有限公司 | The manufacturing method thereof of anti-plasma-based adhesive tape and semiconductor packages |
| CN108300368B (en) * | 2016-09-12 | 2020-12-04 | 稳懋半导体股份有限公司 | Plasma resistant tape and method for manufacturing semiconductor package |
| CN113613897A (en) * | 2019-03-26 | 2021-11-05 | 琳得科株式会社 | Release sheet |
| CN113613897B (en) * | 2019-03-26 | 2023-05-12 | 琳得科株式会社 | Stripping sheet |
| CN117511426A (en) * | 2024-01-05 | 2024-02-06 | 深圳市长松科技有限公司 | Film for packaging and blocking water vapor, semiconductor film packaging method and structure |
| CN117511426B (en) * | 2024-01-05 | 2024-04-12 | 深圳市长松科技有限公司 | Film for packaging and blocking water vapor, semiconductor film packaging method and structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103360971B (en) | 2015-12-23 |
| JP5937397B2 (en) | 2016-06-22 |
| JP2013201402A (en) | 2013-10-03 |
| TW201350557A (en) | 2013-12-16 |
| TWI494409B (en) | 2015-08-01 |
| KR101485659B1 (en) | 2015-01-22 |
| KR20130109069A (en) | 2013-10-07 |
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