TWM455258U - Image sensor structure with air gap - Google Patents
Image sensor structure with air gap Download PDFInfo
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- TWM455258U TWM455258U TW102200721U TW102200721U TWM455258U TW M455258 U TWM455258 U TW M455258U TW 102200721 U TW102200721 U TW 102200721U TW 102200721 U TW102200721 U TW 102200721U TW M455258 U TWM455258 U TW M455258U
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/407—Optical elements or arrangements indirectly associated with the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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Description
本創作係為一種影像感測器結構,特別是一種具有氣室缺口之影像感測器結構。The present invention is an image sensor structure, in particular, an image sensor structure having a gas chamber gap.
第1A圖為習知影像感測器組成結構之示意圖。第1B圖為習知影像感測器製造過程中,光學單元傾斜並造成破裂情況之示意圖。第1C圖為習知影像感測器製造過程中,光學單元傾斜並造成溢膠情況之示意圖。FIG. 1A is a schematic diagram showing the structure of a conventional image sensor. FIG. 1B is a schematic diagram showing the tilting of the optical unit and causing a crack in the manufacturing process of the conventional image sensor. FIG. 1C is a schematic diagram showing the tilting of the optical unit and the overflow of the glue during the manufacturing process of the conventional image sensor.
如第1A圖所示,習知之影像感測器100大致上是由電路基板10(例如Printed Circuit Board,PCB)、影像感測晶片20(Die)、光學單元30(例如透光板)以及封裝膠材40所組成。影像感測晶片20設置於電路基板10上,並且透過打線方式藉由金屬導線25使影像感測晶片20與電路基板10上的電路電性連接,而光學單元30則利用環氧樹脂(Epoxy)等黏著劑29覆蓋於影像感測晶片20的感測區(圖未示)上方,外圍再利用模造成型之方式使用封裝膠材40將金屬導線25、影像感測晶片20及光學單元30的側邊等包覆住。As shown in FIG. 1A, the conventional image sensor 100 is substantially composed of a circuit substrate 10 (eg, Printed Circuit Board, PCB), an image sensing chip 20 (Die), an optical unit 30 (eg, a light transmissive plate), and a package. The glue 40 is composed of. The image sensing chip 20 is disposed on the circuit substrate 10, and electrically connects the image sensing wafer 20 and the circuit on the circuit substrate 10 by the wire bonding method, and the optical unit 30 utilizes epoxy resin (Epoxy). The adhesive 29 covers the sensing area (not shown) of the image sensing wafer 20, and the periphery of the metal wire 25, the image sensing wafer 20, and the optical unit 30 are further encapsulated by the molding adhesive 40. Wrap it around.
然而,如第1B圖所示,如果黏著劑29的量或高度不一,在進行模造成型製程時,會使黏著於影像感測晶片20的感測區(圖未示)上方的光學單元30放置的不平整(例如左右歪斜),將導致光學單元30相對於影像感測晶片20或電路基板10的傾斜度(tilt)過大,不但影響影像感測器的感測品質,還使得在進行模造成型製程中模具50下壓時容易造成光學單元30破裂,而降低 了製造影像感測器的良率。However, as shown in FIG. 1B, if the amount or height of the adhesive 29 is different, the optical unit 30 adhered to the sensing region (not shown) of the image sensing wafer 20 during the mold-forming process. The unevenness of the placement (for example, left and right skew) will cause the tilt of the optical unit 30 relative to the image sensing wafer 20 or the circuit substrate 10 to be too large, which not only affects the sensing quality of the image sensor, but also enables molding. When the mold 50 is pressed in the molding process, the optical unit 30 is easily broken and lowered. The yield of the image sensor is manufactured.
另外,又如第1C圖所示,在進行模造成型製程時,由於光學單元30、影像感測晶片20及黏著劑29所圍成之空間內的氣體受到較高的環境溫度加熱易產生不均勻膨脹,膨脹造成的內壓升高不僅會推動光學單元30造成光學單元30傾斜,還會向外推擠黏著劑29形成溢膠之情況,因而降低了製造影像感測器的良率。In addition, as shown in FIG. 1C, when the mold-forming process is performed, the gas in the space surrounded by the optical unit 30, the image sensing wafer 20, and the adhesive 29 is heated by the high ambient temperature to cause unevenness. The increase in internal pressure caused by expansion and expansion not only pushes the optical unit 30 to cause the optical unit 30 to tilt, but also pushes the adhesive 29 outward to form an overflow, thereby reducing the yield of the image sensor.
本創作係為一種具有氣室缺口之影像感測器結構,其包括:一電路基板、一影像感測晶片、一黏著層及一光學單元。本創作可以達到藉由氣室缺口平衡氣室內及氣室外之壓力而避免內壓推擠光學單元及黏著層造成光學單元傾斜或是溢膠的情況。The present invention is an image sensor structure having a gas chamber gap, comprising: a circuit substrate, an image sensing wafer, an adhesive layer and an optical unit. This creation can achieve the situation that the pressure of the air chamber is balanced by the pressure in the air chamber and the outside of the air chamber to avoid the internal pressure pushing the optical unit and the adhesive layer to cause the optical unit to tilt or overflow.
本創作提供一種具有氣室缺口之影像感測器結構,其包括:一電路基板,其具有一承載面及一底面,承載面上設置有複數個第一導電接點;一影像感測晶片,其具有一第一表面,結合於承載面上;一第二表面,其具有一感測區;及複數個第二導電接點,其係設置於感測區之外側,又該些第二導電接點分別藉由複數條金屬導線與該些第一導電接點電性連接;一黏著層,其設置於第二表面上感測區及該些第二導電接點之間的區域且不覆蓋住感測區;以及一光學單元,其係透過黏著層以黏著於第二表面上,且影像感測晶片及光學單元間形成一氣室,氣室以一氣室缺口與外界連通。The present invention provides an image sensor structure having a gas chamber gap, comprising: a circuit substrate having a bearing surface and a bottom surface; the carrier surface is provided with a plurality of first conductive contacts; an image sensing wafer, The first surface is coupled to the bearing surface; the second surface has a sensing area; and the plurality of second conductive contacts are disposed on the outer side of the sensing area, and the second conductive The contacts are electrically connected to the first conductive contacts by a plurality of metal wires respectively; an adhesive layer is disposed on the second surface and the region between the sensing regions and the second conductive contacts is not covered And the optical unit is adhered to the second surface through the adhesive layer, and an air chamber is formed between the image sensing wafer and the optical unit, and the air chamber communicates with the outside with a gas chamber gap.
藉由本創作的實施,至少可達到下列進步功效:With the implementation of this creation, at least the following advancements can be achieved:
一、氣室缺口可以平衡氣室內及氣室外的壓力,避免內壓推擠黏著層而造成溢膠的情況。First, the gas chamber gap can balance the pressure inside the gas chamber and outside the gas chamber, avoiding the situation that the internal pressure pushes the adhesive layer and causes the glue to overflow.
二、氣室缺口可以平衡氣室內及氣室外的壓力,避免內壓推擠光學單元而造成光學單元傾斜的問題。Second, the gas chamber gap can balance the pressure inside the gas chamber and outside the gas chamber, avoiding the problem that the internal pressure pushes the optical unit and causes the optical unit to tilt.
為了使任何熟習相關技藝者了解本創作之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖 式,任何熟習相關技藝者可輕易地理解本創作相關之目的及優點,因此將在實施方式中詳細敘述本創作之詳細特徵以及優點。In order to enable any skilled artisan to understand the technical content of the present invention and implement it according to the contents of the present specification, the scope of the patent application and the drawings The objects and advantages of the present invention can be easily understood by those skilled in the art, and thus the detailed features and advantages of the present invention will be described in detail in the embodiments.
100‧‧‧習知之影像感測器100‧‧‧Study image sensor
10‧‧‧電路基板10‧‧‧ circuit board
11‧‧‧承載面11‧‧‧ bearing surface
12‧‧‧第一導電接點12‧‧‧First conductive contacts
13‧‧‧驅動IC及被動元件13‧‧‧Drive ICs and passive components
14‧‧‧底面14‧‧‧ bottom
200‧‧‧具有氣室缺口之影像感測器結構200‧‧‧Image sensor structure with air gap
20‧‧‧影像感測晶片20‧‧‧Image sensing wafer
21‧‧‧第一表面21‧‧‧ first surface
22‧‧‧第二表面22‧‧‧ second surface
23‧‧‧感測區23‧‧‧Sensing area
24‧‧‧第二導電接點24‧‧‧Second conductive contacts
25‧‧‧金屬導線25‧‧‧Metal wire
26‧‧‧黏著層26‧‧‧Adhesive layer
27‧‧‧球狀支撐件27‧‧‧Spherical support
28..‧‧‧氣室缺口28..‧‧‧ gas chamber gap
28’‧‧‧氣室缺口28’‧‧‧ gas chamber gap
29‧‧‧黏著劑29‧‧‧Adhesive
30‧‧‧光學單元30‧‧‧ Optical unit
301‧‧‧透光板301‧‧‧Translucent plate
302‧‧‧中間層302‧‧‧Intermediate
303‧‧‧框形凹緣303‧‧‧ Frame-shaped concave edge
304‧‧‧凹陷部304‧‧‧Depression
305‧‧‧上表面305‧‧‧ upper surface
31‧‧‧氣室31‧‧‧ air chamber
40‧‧‧封裝膠材40‧‧‧Package
50‧‧‧模具50‧‧‧Mold
60‧‧‧填充膠材60‧‧‧Filled rubber
第1A圖為習知影像感測器組成結構之示意圖。FIG. 1A is a schematic diagram showing the structure of a conventional image sensor.
第1B圖為習知影像感測器製造過程中,光學單元傾斜並造成破裂情況之示意圖。FIG. 1B is a schematic diagram showing the tilting of the optical unit and causing a crack in the manufacturing process of the conventional image sensor.
第1C圖為習知影像感測器製造過程中,光學單元傾斜並造成溢膠情況之示意圖。FIG. 1C is a schematic diagram showing the tilting of the optical unit and the overflow of the glue during the manufacturing process of the conventional image sensor.
第2圖為本創作實施例之一種具有氣室缺口之影像感測器結構剖視圖。2 is a cross-sectional view showing the structure of an image sensor having a cell gap in the present embodiment.
第3A圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之俯視示意圖一。FIG. 3A is a top plan view of an image sensor having a gas cell gap and an adhesive layer thereof according to an embodiment of the present invention.
第3B圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之俯視示意圖二。FIG. 3B is a top plan view 2 of an image sensor having a gas cell gap and an adhesive layer thereof according to an embodiment of the present invention.
第3C圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之結構剖視圖。FIG. 3C is a cross-sectional view showing the structure of an image sensor having a cell gap and an adhesive layer thereof according to an embodiment of the present invention.
第4圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之俯視示意圖三。4 is a top plan view 3 of an image sensor having a gas cell gap and an adhesive layer thereof according to an embodiment of the present invention.
第5A圖為本創作實施例之一種中間層立體圖。Fig. 5A is a perspective view of an intermediate layer of the present embodiment.
第5B圖為本創作實施例之一種中間層及透光板之結合立體圖。FIG. 5B is a perspective view showing a combination of an intermediate layer and a light-transmitting plate according to the embodiment of the present invention.
第5C圖為本創作實施例之另一種具有氣室缺口之影像感測器結構剖視圖。FIG. 5C is a cross-sectional view showing another structure of an image sensor having a cell gap in the present embodiment.
第5D圖為第5C圖之俯視圖。Fig. 5D is a plan view of Fig. 5C.
第6A圖為本創作實施例之一種具有氣室缺口之影像感測器封裝後結構剖視圖一。FIG. 6A is a cross-sectional view showing the structure of a package of an image sensor having a gas cell gap according to an embodiment of the present invention.
第6B圖為本創作實施例之一種具有氣室缺口之影像感測器封裝後結構剖視圖二。FIG. 6B is a cross-sectional view 2 of the image sensor package with a gas cell gap according to an embodiment of the present invention.
第2圖為本創作實施例之一種具有氣室缺口之影像感測器結構剖視圖。第3A圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之俯視示意圖一。第3B圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之俯視示意圖二。第3C圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之結構剖視圖。2 is a cross-sectional view showing the structure of an image sensor having a cell gap in the present embodiment. FIG. 3A is a top plan view of an image sensor having a gas cell gap and an adhesive layer thereof according to an embodiment of the present invention. FIG. 3B is a top plan view 2 of an image sensor having a gas cell gap and an adhesive layer thereof according to an embodiment of the present invention. FIG. 3C is a cross-sectional view showing the structure of an image sensor having a cell gap and an adhesive layer thereof according to an embodiment of the present invention.
第4圖為本創作實施例之一種具有氣室缺口之影像感測器及其黏著層之俯視示意圖三。第5A圖為本創作實施例之一種中間層立體圖。第5B圖為本創作實施例之一種中間層及透光板之結合立體圖。第5C圖為本創作實施例之另一種具有氣室缺口之影像感測器結構剖視圖。第5D圖為第5C圖之俯視圖。第6A圖為本創作實施例之一種具有氣室缺口之影像感測器封裝後結構剖視圖一。第6B圖為本創作實施例之一種具有氣室缺口之影像感測器封裝後結構剖視圖二。4 is a top plan view 3 of an image sensor having a gas cell gap and an adhesive layer thereof according to an embodiment of the present invention. Fig. 5A is a perspective view of an intermediate layer of the present embodiment. FIG. 5B is a perspective view showing a combination of an intermediate layer and a light-transmitting plate according to the embodiment of the present invention. FIG. 5C is a cross-sectional view showing another structure of an image sensor having a cell gap in the present embodiment. Fig. 5D is a plan view of Fig. 5C. FIG. 6A is a cross-sectional view showing the structure of a package of an image sensor having a gas cell gap according to an embodiment of the present invention. FIG. 6B is a cross-sectional view 2 of the image sensor package with a gas cell gap according to an embodiment of the present invention.
如第2圖及第3A圖所示,本創作實施例為一種具有氣室缺口之影像感測器結構200,其包括:一電路基板10、一影像感測晶片20、一黏著層26及一光學單元30。As shown in FIG. 2 and FIG. 3A , the present embodiment is an image sensor structure 200 having a gas cell gap, comprising: a circuit substrate 10 , an image sensing chip 20 , an adhesive layer 26 , and a Optical unit 30.
電路基板10,其具有一承載面11及一底面14。承載面11上設置有複數個第一導電接點12以作為打線時電性連接用。此外,承載面11上也可選擇性地設置驅動IC及被動元件13,並且使驅動IC及被動元件13與承載面11上的電路進行電性連接。The circuit substrate 10 has a bearing surface 11 and a bottom surface 14. A plurality of first conductive contacts 12 are disposed on the bearing surface 11 for electrical connection during wire bonding. In addition, the driving IC and the passive component 13 are selectively disposed on the carrying surface 11, and the driving IC and the passive component 13 are electrically connected to the circuit on the carrying surface 11.
影像感測晶片20可以為一互補式金氧半導體影像感 測晶片或一電荷耦合元件。影像感測晶片20具有:一第一表面21;一第二表面22;及複數個第二導電接點24。The image sensing chip 20 can be a complementary CMOS image sense A wafer or a charge coupled device. The image sensing wafer 20 has a first surface 21, a second surface 22, and a plurality of second conductive contacts 24.
第一表面21為影像感測晶片20的下表面,其可透過一膠體結合於承載面11上,以使影像感測晶片20結合於電路基板10。第二表面22為影像感測晶片20的上表面,並且第二表面22具有一感測區23用以接收並感測光線。另外,複數個第二導電接點24則設置於第二表面22上感測區23之外側,並可分別藉由金屬導線25與承載面11上的第一導電接點12電性連接。因此,影像感測晶片20可透過承載面11上的電路再與驅動IC及被動元件13電性連接。The first surface 21 is a lower surface of the image sensing wafer 20 , and is coupled to the bearing surface 11 through a glue to bond the image sensing wafer 20 to the circuit substrate 10 . The second surface 22 is the upper surface of the image sensing wafer 20, and the second surface 22 has a sensing region 23 for receiving and sensing light. In addition, a plurality of second conductive contacts 24 are disposed on the outer side of the sensing region 23 on the second surface 22, and can be electrically connected to the first conductive contacts 12 on the carrying surface 11 by the metal wires 25, respectively. Therefore, the image sensing chip 20 can be electrically connected to the driving IC and the passive component 13 through the circuit on the carrying surface 11 .
黏著層26係設置於第二表面22上感測區23之周圍,例如黏著層26可以設置於感測區23及該些第二導電接點24之間的區域,以使封裝後之感測區23可被容置在黏著層26及光學單元30所構成之空間中,進而避免感測區23受到外部侵襲。同時,於塗覆時黏著層26不覆蓋住感測區23,避免影響感測區23接收並感測光線。其中,黏著層26可以為一光固化黏著層,特別可以為一紫外(UltraViolet,UV)光固化黏著層,因此在黏著層26尚未經由照射紫外光固化前,其呈現凝膠態。The adhesive layer 26 is disposed on the second surface 22 around the sensing region 23. For example, the adhesive layer 26 can be disposed between the sensing region 23 and the second conductive contacts 24 to sense the package. The region 23 can be accommodated in the space formed by the adhesive layer 26 and the optical unit 30, thereby preventing the sensing region 23 from being externally attacked. At the same time, the adhesive layer 26 does not cover the sensing area 23 during coating, thereby avoiding affecting the sensing area 23 to receive and sense light. The adhesive layer 26 can be a photocurable adhesive layer, and can be an ultraviolet (UltraViolet, UV) photocurable adhesive layer. Therefore, the adhesive layer 26 exhibits a gel state before it is cured by ultraviolet light.
光學單元30可以為一透光板,其係由一玻璃製成。光學單元30係透過黏著層26以黏著於第二表面22上,並藉由固化黏著層26以固定光學單元30,且黏著層26、影像感測晶片20及光學單元30間形成一氣室31。氣室31具有一氣室缺口28與外界連通,以平衡氣室31內及氣室31外的壓力。如此一來,在固化黏著層26時,因加熱而膨脹的氣室31內氣體將由氣室缺口28往氣室31外散出,避免了過高的氣體內壓推擠光學單元30所造成之光學單元30傾斜問題,或過高的氣體內壓推擠黏著層26所造成之溢膠情形。The optical unit 30 can be a light transmissive plate made of a glass. The optical unit 30 is adhered to the second surface 22 through the adhesive layer 26, and the optical unit 30 is fixed by curing the adhesive layer 26, and an air chamber 31 is formed between the adhesive layer 26, the image sensing wafer 20 and the optical unit 30. The gas chamber 31 has a gas chamber notch 28 communicating with the outside to balance the pressure in the gas chamber 31 and outside the gas chamber 31. As a result, when the adhesive layer 26 is cured, the gas in the gas chamber 31 expanded by heating will be dissipated from the gas chamber notch 28 to the outside of the gas chamber 31, thereby avoiding the excessive gas internal pressure pushing the optical unit 30. The tilting problem of the optical unit 30 or the excessive gas internal pressure pushes the overflow of the adhesive layer 26.
上述之氣室缺口28可以藉由下列的方式形成。例如黏著層26可以呈一C字形結構,C字形結構之開口與覆蓋於黏著層26上方之光學單元30及黏著層26下方之影像感測晶片20間 構成氣室缺口28。The above-described gas chamber notch 28 can be formed in the following manner. For example, the adhesive layer 26 may have a C-shaped structure, and the opening of the C-shaped structure overlaps between the optical unit 30 over the adhesive layer 26 and the image sensing wafer 20 under the adhesive layer 26. The air chamber notch 28 is formed.
如第3B圖所示,黏著層26亦可以呈彼此相對設置之二L字形結構,二L字形結構各位於相對應之二對角以形成分別在另外二對角上之二開口,且該些開口與黏著層26下方之影像感測晶片20及覆蓋於黏著層26上方之光學單元30構成該些氣室缺口28。As shown in FIG. 3B, the adhesive layer 26 may also have two L-shaped structures disposed opposite to each other, and the two L-shaped structures are respectively located at opposite diagonals to form two openings respectively on the other two diagonals, and the openings The image sensing wafer 20 under the opening and adhesive layer 26 and the optical unit 30 overlying the adhesive layer 26 constitute the gas cell gaps 28.
如第3C圖所示,由於黏著層26在未固化前為凝膠狀,其容易因為塗覆時所施加的量或高度不一致,造成設置於其上之光學單元30傾斜度過大,影響影像感測之品質。因此,黏著層26可以進一步添加有複數個球狀支撐件27(ball spacer),球狀支撐件27可以使光學單元30與影像感測晶片20保持一最適當間距,進而控制光學單元30的傾斜度在合理範圍內。As shown in FIG. 3C, since the adhesive layer 26 is gel-like before uncured, it is easy to cause the optical unit 30 disposed thereon to be excessively inclined due to the inconsistent amount or height applied during coating, which affects the image feeling. The quality of the test. Therefore, the adhesive layer 26 can be further provided with a plurality of ball spacers 27, which can maintain the optical unit 30 and the image sensing wafer 20 at an optimum spacing to control the tilt of the optical unit 30. Degree is within reasonable limits.
如第3C圖至第5B圖所示,在黏著層26沒有添加球狀支撐件27的情況下,為了使光學單元30與影像感測晶片20保持一最適當間距,進而控制光學單元30的傾斜度在合理範圍內。光學單元30可以包括:一中間層302及一透光板301,利用固定高度的中間層302控制透光板301與影像感測晶片20之間的間距。此時,黏著層26可以呈現一封閉式迴路結構,使黏著層26能將光學單元30氣密黏合於第二表面22上。As shown in FIGS. 3C to 5B, in the case where the spherical support member 27 is not added to the adhesive layer 26, in order to maintain the optical unit 30 and the image sensing wafer 20 at an optimum spacing, the tilt of the optical unit 30 is controlled. Degree is within reasonable limits. The optical unit 30 can include an intermediate layer 302 and a light transmissive plate 301. The intermediate layer 302 of the fixed height controls the spacing between the light transmissive plate 301 and the image sensing wafer 20. At this point, the adhesive layer 26 can assume a closed loop structure that allows the adhesive layer 26 to hermetically adhere the optical unit 30 to the second surface 22.
中間層302係為一口字形結構,使中間層302與黏著層26對應並黏著於黏著層26上時,可以不覆蓋住感測區23。另外,可以在中間層302之上表面305內側形成一框形凹緣303,使透光板301可以黏著於框形凹緣303上以與中間層302結合。中間層302之材料可以為一玻璃、一陶瓷、一液晶聚合物、一模製化合物、一矽氧烷基聚合物、一感光性乾膜或一焊料遮罩。The intermediate layer 302 is a monogram structure. When the intermediate layer 302 is associated with the adhesive layer 26 and adhered to the adhesive layer 26, the sensing region 23 may not be covered. In addition, a frame-shaped concave edge 303 may be formed inside the upper surface 305 of the intermediate layer 302 so that the light-transmitting plate 301 can be adhered to the frame-shaped concave edge 303 to be combined with the intermediate layer 302. The material of the intermediate layer 302 may be a glass, a ceramic, a liquid crystal polymer, a molding compound, a decyloxyalkyl polymer, a photosensitive dry film or a solder mask.
如第5A圖至第5D圖所示,中間層302之內側可以具有一凹陷部304,使透光板301與中間層302結合時,例如透光板301黏著於框形凹緣303上時,無法完全氣密結合,因而在透光板301與凹陷部304間構成氣室缺口28’。氣室缺口28’連通氣室31內及氣室31外之空氣,能避免因氣室31內壓力大於外界壓 力而影響光學單元30的黏著穩定度。As shown in FIG. 5A to FIG. 5D, the inner side of the intermediate layer 302 may have a recessed portion 304, such that when the light-transmitting plate 301 is combined with the intermediate layer 302, for example, when the light-transmitting plate 301 is adhered to the frame-shaped concave edge 303, The airtight gap 28' is formed between the light-transmitting plate 301 and the recessed portion 304 because it cannot be completely hermetically bonded. The air chamber notch 28' communicates with the air in the air chamber 31 and outside the air chamber 31, so that the pressure in the air chamber 31 is greater than the external pressure. The force affects the adhesion stability of the optical unit 30.
如第5C圖至第6A圖所示,本創作實施例之一種具有氣室缺口之影像感測器結構200進一步包括一填充膠材60,其係設置於氣室缺口28/28’中以封閉氣室缺口28/28’,使氣室31形成一密閉空間,避免感測區23受到外部侵襲。As shown in FIG. 5C to FIG. 6A, an image sensor structure 200 having a gas cell gap in the present embodiment further includes a filling material 60 disposed in the gas chamber notch 28/28' to be closed. The gas chamber gap 28/28' forms a closed space for the gas chamber 31 to prevent the sensing area 23 from being externally attacked.
如第6A圖所示,具有氣室缺口之影像感測器結構200進一步包括一封裝膠材40,其可以透過模造成型(moding)封裝製程或是點膠(dispensing)技術包覆於電路基板10、影像感測晶片20、黏著層26、填充膠材60及光學單元30之側邊。更詳細地說,可藉由封裝膠材40將光學單元30側邊與光學單元30下方、電路基板10側邊與電路基板10上方以及封閉式迴路圖樣、C字形圖樣或雙L字形圖樣之黏著層26外圍之間的空間封合起來。藉此,可透過封裝膠材40包覆電路基板10的側邊,以避免電路基板10的側邊受到撞擊而受損。As shown in FIG. 6A, the image sensor structure 200 having a gas cell gap further includes an encapsulant 40 that can be coated on the circuit substrate 10 by a moding packaging process or a dispensing technique. The image sensing wafer 20, the adhesive layer 26, the filling material 60, and the side of the optical unit 30. In more detail, the side of the optical unit 30 and the side of the optical unit 30, the side of the circuit board 10 and the circuit board 10, and the closed circuit pattern, the C-shaped pattern or the double L-shaped pattern can be adhered by the encapsulant 40. The space between the outer layers of layer 26 is sealed. Thereby, the side edges of the circuit substrate 10 can be covered by the encapsulant 40 to prevent the side edges of the circuit substrate 10 from being damaged by impact.
如第6B圖所示,具有氣室缺口之影像感測器結構200進一步包括一封裝膠材40,其可以透過模造成型(moding)封裝製程或是點膠(dispensing)技術設置於電路基板10上,並包覆於影像感測晶片20、黏著層26、填充膠材60及光學單元30之側邊。更詳細地說,可藉由封裝膠材40將光學單元30側邊與光學單元30下方、電路基板10上方但不含電路基板10側邊以及封閉式迴路圖樣、C字形圖樣或雙L字形圖樣之黏著層26外圍之間的空間封合起來。As shown in FIG. 6B, the image sensor structure 200 having a gas cell gap further includes a package adhesive 40 which can be disposed on the circuit substrate 10 through a molding process or a dispensing technique. And covering the image sensing wafer 20, the adhesive layer 26, the filling material 60 and the side of the optical unit 30. In more detail, the side of the optical unit 30 and the lower side of the optical unit 30, but not the side of the circuit substrate 10, and the closed circuit pattern, the C-shaped pattern or the double L-shaped pattern can be formed by the encapsulant 40. The space between the outer periphery of the adhesive layer 26 is sealed.
本創作實施例之具有氣室缺口之影像感測器結構可以藉由氣室缺口平衡氣室內及氣室外之壓力,避免過高之氣體內壓推擠光學單元造成光學單元傾斜或推擠黏著層造成溢膠情形。此外,還可以藉由球狀支撐件或中間層之設置,控制光學單元的傾斜度在合理範圍內。The image sensor structure with a gas chamber gap in the embodiment of the present invention can balance the pressure in the gas chamber and the gas chamber by the gas chamber gap, and avoid the excessive gas internal pressure pushing the optical unit to cause the optical unit to tilt or push the adhesive layer. Causes spillage. In addition, the inclination of the optical unit can be controlled within a reasonable range by the arrangement of the spherical support or the intermediate layer.
惟上述各實施例係用以說明本創作之特點,其目的在使熟習該技術者能瞭解本創作之內容並據以實施,而非限定本創作之專利範圍,故凡其他未脫離本創作所揭示之精神而完成之 等效修飾或修改,仍應包含在以下所述之申請專利範圍中。However, the above embodiments are intended to illustrate the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement it, and not to limit the scope of the patent of the present invention. Complete the spirit of revealing Equivalent modifications or modifications are still included in the scope of the patent application described below.
200‧‧‧具有氣室缺口之影像感測器結構200‧‧‧Image sensor structure with air gap
10‧‧‧電路基板10‧‧‧ circuit board
11‧‧‧乘載面11‧‧‧ riding surface
12‧‧‧第一導電接點12‧‧‧First conductive contacts
13‧‧‧驅動IC及被動元件13‧‧‧Drive ICs and passive components
14‧‧‧底面14‧‧‧ bottom
20‧‧‧影像感測晶片20‧‧‧Image sensing wafer
21‧‧‧第一表面21‧‧‧ first surface
23‧‧‧感測區23‧‧‧Sensing area
24‧‧‧第二導電接點24‧‧‧Second conductive contacts
25‧‧‧金屬導線25‧‧‧Metal wire
26‧‧‧黏著層26‧‧‧Adhesive layer
30‧‧‧光學單元30‧‧‧ Optical unit
31‧‧‧氣室31‧‧‧ air chamber
Claims (15)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102200721U TWM455258U (en) | 2013-01-11 | 2013-01-11 | Image sensor structure with air gap |
| CN201320029642.5U CN203085543U (en) | 2013-01-11 | 2013-01-18 | Image sensor structure with air chamber gap |
| JP2013000324U JP3182665U (en) | 2013-01-11 | 2013-01-23 | Image sensor with chamber notch |
| KR2020130001045U KR200473633Y1 (en) | 2013-01-11 | 2013-02-08 | Image sensor structure with chamber breach |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| TW102200721U TWM455258U (en) | 2013-01-11 | 2013-01-11 | Image sensor structure with air gap |
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| Publication Number | Publication Date |
|---|---|
| TWM455258U true TWM455258U (en) | 2013-06-11 |
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| TW102200721U TWM455258U (en) | 2013-01-11 | 2013-01-11 | Image sensor structure with air gap |
Country Status (4)
| Country | Link |
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| JP (1) | JP3182665U (en) |
| KR (1) | KR200473633Y1 (en) |
| CN (1) | CN203085543U (en) |
| TW (1) | TWM455258U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI690779B (en) * | 2018-06-26 | 2020-04-11 | 鴻海精密工業股份有限公司 | Photosensitive chip packaging module and its forming method |
| TWI697113B (en) * | 2018-03-28 | 2020-06-21 | 同欣電子工業股份有限公司 | Chip packaging device and manufacturing method thereof |
| TWI698009B (en) * | 2018-06-26 | 2020-07-01 | 鴻海精密工業股份有限公司 | Image sensor chip encapsulation structure and method for manufacturing same |
| TWI848096B (en) * | 2019-12-04 | 2024-07-11 | 日月光半導體製造股份有限公司 | Semiconductor package structures |
| TWI880226B (en) * | 2023-05-26 | 2025-04-11 | 同欣電子工業股份有限公司 | Sensor package structure and manufacturing method thereof |
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| CN104659041A (en) * | 2013-11-20 | 2015-05-27 | 硕达科技股份有限公司 | Sensor chip packaging method |
| TWI631672B (en) * | 2017-09-01 | 2018-08-01 | Kingpak Technology Inc. | Sensor package structure |
| CN109755262A (en) * | 2017-11-01 | 2019-05-14 | 中芯长电半导体(江阴)有限公司 | A kind of encapsulating structure and packaging method |
| TWI774824B (en) * | 2018-08-16 | 2022-08-21 | 先進光電科技股份有限公司 | Optical imaging module |
| CN114597201A (en) * | 2022-02-21 | 2022-06-07 | 江苏长电科技股份有限公司 | Sensor packaging structure and packaging method |
| TWI866758B (en) * | 2024-01-26 | 2024-12-11 | 同欣電子工業股份有限公司 | Sensor package structure |
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| JP2003204053A (en) * | 2001-03-05 | 2003-07-18 | Canon Inc | Imaging module, method of manufacturing the imaging module, and digital camera |
| JP2005252183A (en) * | 2004-03-08 | 2005-09-15 | Sony Corp | Solid-state imaging device and manufacturing method thereof |
| JP2007019117A (en) * | 2005-07-06 | 2007-01-25 | Matsushita Electric Ind Co Ltd | Optical device and manufacturing method thereof |
| JP2007311416A (en) * | 2006-05-16 | 2007-11-29 | Fujifilm Corp | Solid-state imaging device |
| JP5690466B2 (en) * | 2008-01-31 | 2015-03-25 | インヴェンサス・コーポレイション | Manufacturing method of semiconductor chip package |
| TWI425597B (en) * | 2009-12-31 | 2014-02-01 | 勝開科技股份有限公司 | Image sensor package structure with black colloid |
| TWI414062B (en) * | 2011-02-24 | 2013-11-01 | 勝開科技股份有限公司 | Image sensor manufacturing method for reducing tilt of light-transmitting plate |
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2013
- 2013-01-11 TW TW102200721U patent/TWM455258U/en not_active IP Right Cessation
- 2013-01-18 CN CN201320029642.5U patent/CN203085543U/en not_active Expired - Fee Related
- 2013-01-23 JP JP2013000324U patent/JP3182665U/en not_active Expired - Fee Related
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI697113B (en) * | 2018-03-28 | 2020-06-21 | 同欣電子工業股份有限公司 | Chip packaging device and manufacturing method thereof |
| TWI690779B (en) * | 2018-06-26 | 2020-04-11 | 鴻海精密工業股份有限公司 | Photosensitive chip packaging module and its forming method |
| TWI698009B (en) * | 2018-06-26 | 2020-07-01 | 鴻海精密工業股份有限公司 | Image sensor chip encapsulation structure and method for manufacturing same |
| US10748829B2 (en) | 2018-06-26 | 2020-08-18 | Triple Win Technology(Shenzhen Co.Ltd. | Encapsulation structure for image sensor chip and method for manufacturing the same |
| US10749046B2 (en) | 2018-06-26 | 2020-08-18 | Triple Win Technology(Shenzhen) Co.Ltd. | Encapsulation structure for image sensor chip and method for manufacturing the same |
| TWI848096B (en) * | 2019-12-04 | 2024-07-11 | 日月光半導體製造股份有限公司 | Semiconductor package structures |
| TWI880226B (en) * | 2023-05-26 | 2025-04-11 | 同欣電子工業股份有限公司 | Sensor package structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
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| KR200473633Y1 (en) | 2014-07-14 |
| CN203085543U (en) | 2013-07-24 |
| JP3182665U (en) | 2013-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4K | Annulment or lapse of a utility model due to non-payment of fees |