JP2008047665A - Solid-state imaging device manufacturing method and solid-state imaging device - Google Patents

Abstract

A solid-state imaging device manufacturing method and a solid-state imaging device capable of performing resin sealing while appropriately protecting a cover member and an image sensor are provided.
A large number of sensor packages 12 are fixed on an assembly wiring board 57, and a support frame 15 is set on each sensor package 12. In the support frame 15, the leg portion 15 c is installed on the collective wiring board 57, and the upper surface 15 d of the frame portion 15 b is arranged at the same position as the upper surface of the cover glass 14 or higher than the upper surface of the cover glass 14. The assembly wiring board 57 is set in the cavity 66 a of the lower mold die 66 of the transfer mold device 64, the upper mold die 68 is aligned with the lower mold die 66, and the plunger 62 is operated to apply the sealing resin 17. It is injected into the cavities 66a and 68a, and the outer periphery of the sensor package 12 is sealed with resin.
[Selection] Figure 11

Description

  The present invention relates to a method for manufacturing a solid-state imaging device and a solid-state imaging device, and more particularly, a method for manufacturing a solid-state imaging device in which a sensor package in which an image sensor of an imaging chip is sealed with a cover member is sealed with resin, and solid The present invention relates to an imaging device.

  Digital cameras and video cameras that use a solid-state imaging device such as a CCD or CMOS type have become widespread. In addition, a solid-state imaging device and a memory are incorporated in an electronic device such as a personal computer, a mobile phone, and an electronic notebook, and a photographing function is added. Since the solid-state imaging device has a large influence on the external size of an electronic device or the like in which the solid-state imaging device is incorporated, it is desired to reduce the size thereof.

  In order to reduce the size, a solid-state imaging device using a chip size package (hereinafter abbreviated as CSP) that can be packaged with a size comparable to that of a bare chip has been invented. In this CSP type solid-state imaging device, for example, an imaging chip in which an image sensor such as a CCD and an input / output pad are formed on an upper surface and an upper surface of the imaging chip are bonded via a spacer to seal the image sensor. It is comprised from the cover glass (cover member) and the external electrode for connecting to the exterior (for example, refer patent document 1).

The CSP type solid-state imaging device is created by the following method, for example.
1. A large number of image sensors and input / output pads corresponding to these are formed on the upper surface of the silicon wafer.
2. A spacer surrounding the outer periphery of each image sensor is formed on the silicon wafer.
3. A glass substrate which is a base material of a cover glass is bonded to the upper surface of the silicon wafer via a spacer, and each image sensor is sealed.
4). External electrodes corresponding to the image sensors are formed on the silicon wafer.
5. The silicon wafer and the glass substrate are separated into pieces by dicing or the like.

  In Patent Document 1, a CSP type solid-state imaging device (hereinafter referred to as a sensor package) having no external electrode is fixed on a wiring board, and input / output pads of the sensor package and conductor pads of the wiring board are fixed. A package form of a solid-state imaging device is disclosed in which a gap is connected with a bonding wire, and the outer periphery of the sensor package is then sealed with a sealing resin. Sealing the space surrounded by the imaging chip, spacer, and cover glass with sealing resin prevents fogging of the cover glass caused by the ingress of moisture into this space and poor electrical operation of the image sensor. be able to.

  However, Patent Document 1 does not describe a method of resin-sealing the outer periphery of the cover glass while protecting the upper surface of the cover glass. When the upper surface of the cover glass is blocked or soiled by the resin, the yield is deteriorated and the cost is increased. Therefore, establishment of an appropriate resin sealing method is desired.

As a method of resin sealing while appropriately protecting the cover glass, the sensor package was fixed on the assembly wiring board, and the input / output pads of each sensor package and the assembly wiring board corresponding to each sensor package were provided. A cavity formed by connecting the internal electrode with a bonding wire, sandwiching the upper surface of each cover member and the lower surface of the assembly wiring board between the upper mold die and the lower mold die, and forming the upper mold die and the lower mold die. A sealing method is conceivable in which a sealing resin is filled in and the outer periphery of each sensor package is sealed.
JP 2001-257334 A

  However, in the resin sealing method as described above, when the upper surface of each cover member and the lower surface of the assembly wiring board are sandwiched between the upper mold die and the lower mold die, the pressing pressure of each mold die is applied to the cover glass and the imaging. Since it is directly applied to the chip, the cover glass may be broken or the image sensor on the imaging chip may be damaged.

  The present invention has been made to solve the above problems, and provides a manufacturing method of a solid-state imaging device and a solid-state imaging device capable of performing resin sealing while appropriately protecting a cover member and an image sensor.

  The solid-state imaging device manufacturing method of the present invention includes an imaging chip provided with an image sensor and an input / output pad, a light-transmitting cover member that is attached to the imaging chip and seals the image sensor; A die bonding step for fixing a sensor package having a plurality of fixing portions provided on the assembly wiring board, each of the input / output pads, and each of the sensor packages corresponding to each of the sensor packages. A wire bonding step of connecting the inner electrodes to each other with a bonding wire; a frame portion surrounding the cover member at a position above the upper surface of the cover member; and the frame portion installed on the collective wiring board A support setting step for setting a support frame for each of the sensor packages; Each upper surface of the member and the lower surface of the collective wiring board are sandwiched between an upper mold die and a lower mold die, and sealed in a cavity formed between the upper mold die and the lower mold die A sealing process for filling the resin and sealing the outer periphery of the sensor package; and a singulation process for cutting the assembly wiring board and the sealing resin for each sensor package It is.

  The support frame is preferably made of metal.

  The solid-state imaging device of the present invention includes an imaging chip provided with an image sensor and an input / output pad, and a cover member that is translucent and is attached to the imaging chip and seals the image sensor. A sensor package; a wiring board to which the sensor package is fixed so that an upper surface of the cover member is exposed; an input / output pad of the sensor package; and a bonding wire that connects an internal electrode of the wiring board; A support frame having a frame portion that surrounds the periphery of the cover member at a position above the upper surface of the cover member; a support frame that is installed on the wiring board and supports the frame portion; and an upper surface of the cover member. A sealing resin that seals the outer periphery of the sensor package so as not to be blocked, and is connected to the internal electrode and is removed from the sealing resin. It is characterized in that it comprises an external electrode that is exposed to.

  According to the method for manufacturing a solid-state imaging device of the present invention, since the support frame installed on the assembly wiring board receives the pressing pressure of the upper mold die and the lower mold die in the sealing process, the cover member and the image sensor are appropriately Resin sealing can be performed while protecting. Thereby, the deterioration of the yield in manufacture of a solid-state imaging device can be prevented, and parts other than the upper surface of a cover member can be sealed appropriately.

  Further, by making the support frame made of metal, it is possible to increase the efficiency of heat dissipation by conducting heat generated from the image sensor to the support frame.

  As shown in FIGS. 1 and 2, the solid-state imaging device 10 connects a rectangular wiring board 11, a sensor package 12 fixed on the wiring board 11, and the wiring board 11 and the sensor package 12. A plurality of bonding wires 13, a support frame 15 set to surround the cover glass 14 of the sensor package 12, a sealing resin 17 that seals the outer periphery of the cover glass 14, and a lower surface of the wiring board 11 The outer conductor pad 18 is formed on the outer conductor pad 18. The solid-state imaging device 10 has a package form called a so-called Fine pitch Land Grid Array (FLGA). Since this FLGA package is a conventionally used packaging method, the solid-state imaging device 10 can be manufactured at low cost and with high reliability.

  The wiring board 11 is a substrate board (printed board) using glass epoxy or the like as a base material 21, and a plurality of internal parts used for connection to the sensor package 12 by bonding wires 13 are formed on the upper and lower surfaces of the base material 21. Conductive pads (internal electrodes) 22 and external conductive pads (external electrodes) 18 are respectively formed. The internal conductor pads 22 and the external conductor pads 18 are formed using, for example, Cu, and are electrically connected by a conductive film 24 formed in a through hole 23 that penetrates the base material 21. The upper and lower surfaces of the wiring board 11 are covered with solder resists 25 and 26 except for the inner conductor pads 22 and the outer conductor pads 18.

  The sensor package 12 includes a rectangular imaging chip 29 and a plurality of input / output pads used for connecting the image sensor 30 such as a CCD or CMOS provided on the upper surface of the imaging chip 29 and the wiring board 11 by the bonding wires 13. 31, a transparent cover glass 14 that seals above the image sensor 30, and a spacer 32 that is sandwiched between the imaging chip 29 and the cover glass 14.

  The imaging chip 29 is formed by dividing a silicon wafer on which a large number of image sensors 30 and input / output pads 31 are formed into rectangular shapes. The image sensor 30 includes a large number of light receiving elements arranged in a matrix. On each light receiving element, an RGB color filter and a micro lens array 30a including a large number of micro lenses are stacked. A plurality of input / output pads 31 are formed side by side on two sides across the image sensor 30. These input / output pads 31 are formed, for example, by printing using Au, Al, or the like, and are connected to the image sensor 30 by wiring formed by the same material and method.

  The spacer 32 is formed in a square shape having an opening 32a at the center, for example, using an inorganic material such as silicon. The spacer 32 is bonded to the upper surface of the imaging chip 29 so as to surround the outer periphery of the image sensor 30, and forms a gap between the image sensor 30 and the cover glass 14. Thereby, the microlens array 30a is prevented from interfering with the cover glass 14.

  The cover glass 14 is made of low α-ray glass joined to the upper surface of the spacer 32 so as to close the opening 32a. The low α-ray glass is a glass that emits less α-ray and prevents the light receiving element of the image sensor 30 from being destroyed by the α-ray. An infrared cut filter or an optical low-pass filter may be bonded to the upper surface of the cover glass 14.

  The sensor package 12 is die-bonded on the wiring board 11. Au or Al is used for the bonding wire 13 that connects the input / output pad 31 and the internal conductor pad 22. For the sealing resin 17 that seals the outer periphery of the cover glass 14, for example, an epoxy resin that is a thermosetting resin conventionally used for IC sealing is used. The sealing resin 17 prevents oxidation and corrosion of the input / output pad 31, the internal conductor pad 22, and the bonding wire 13 due to moisture and oxygen in the air, and improves the mechanical strength of the solid-state imaging device 10.

  As shown in FIG. 3, the support frame 15 is connected to a frame portion 15b having a rectangular column connected to a rectangle so as to form a rectangular opening 15a, and to the lower side of the four corners of the frame portion 15b. It consists of four prismatic leg portions 15c supported from below. The cover glass 14 is inserted through the opening 15 a, and each leg portion 15 c is installed on the upper surface of the wiring board 11. The height of the upper surface 15 d of the frame portion 15 b is set so as to be equal to the height of the upper surface of the cover glass 14 or higher than the upper surface of the cover glass 14.

  The support frame 15 is made of, for example, a metal having better thermal conductivity than the sealing resin 17, and heat generated from the image sensor 30 can be conducted to the support frame 15 to improve heat dissipation efficiency. . As a material of the support frame 15, an appropriate material such as Al may be used in consideration of strength and workability. Further, the shape of the support frame 15 is not limited to the above-described one. For example, the frame portion may be a circular ring formed with a cylinder so as to form a circular opening, or the leg portion may be a columnar shape. As long as the frame part supported by the leg part standing on 11 surrounds the circumference | surroundings of the cover glass 14, it is good also as an appropriate shape.

  Next, the manufacturing process of the solid-state imaging device 10 will be described with reference to the flowcharts of FIGS. In addition, the material and apparatus used in each process are described on both sides of the flowchart. The first manufacturing process of the solid-state imaging device 10 is manufacturing the sensor package 12.

  In the manufacturing process of the sensor package, first, the glass substrate 38 that is the base material of the cover glass 14 and the spacer wafer that is the base material of the spacer 32 are joined. As shown in FIG. 6A, an adhesive 39 is applied to the lower surface of the glass substrate 38 using a coater such as a bar coater, a blade coater, or a spin coater. Next, the spacer wafer 40 is bonded to the lower surface of the glass substrate 38 by a bonding apparatus capable of holding and moving the glass substrate 38 and the spacer wafer 40 in parallel. A normal temperature curable adhesive is used as the adhesive 39, but a UV curable adhesive, a visible light curable adhesive, a thermosetting adhesive, or the like may be used. Further, bonding may be performed in a vacuum environment so that air does not enter between the glass substrate 38 and the spacer wafer 40 during bonding.

  In the next step, as shown in FIG. 6B, a thinning step for reducing the thickness of the glass substrate 38 and the spacer wafer 40 is performed. The glass substrate 38 and the spacer wafer 40 are made thicker in order to improve the handling suitability at the time of bonding and to reduce the cost by using a standard wafer. Thus, the solid-state imaging device 10 can be downsized and the etching time can be shortened. In this thinning step, for example, a grinding / polishing apparatus is used.

  In the next step, the spacer 32 is processed. First, as shown in FIG. 6C, a resist 43 is applied to the lower surface of the spacer wafer 40. Next, as shown in FIG. 6D, the resist 43 is exposed using a predetermined mask and developed as shown in FIG. 6E, whereby a resist mask 44 representing the form of the spacer 32 is obtained. Complete. For the creation of the resist mask 44, a coater developer, an exposure device, a developing device, or the like is used.

  The spacer wafer 40 on which the resist mask 44 is formed is etched by a dry etcher, and a portion not covered with the resist mask 44 is removed as shown in FIG. As a result, a large number of spacers 32 are formed on the lower surface of the glass substrate 38. The resist mask 44 and the adhesive 39 after the etching are removed by a cleaning device as shown in FIG.

  As shown in FIG. 8, in the next step, a glass substrate 38 on which a large number of spacers 32 are formed and a silicon wafer 47 on which a large number of image sensors 30 and input / output pads 31 are formed are bonded. . In the first step, an adhesive 50 is applied on each spacer 32 as shown in FIG. As the adhesive 50, a room temperature curable adhesive is used, but a UV curable adhesive, a visible light curable adhesive, a thermosetting adhesive, or the like may be used.

  Next, as shown in FIG. 7B, the spacers 32 on the glass substrate 38 and the silicon wafer 47 are bonded. For this joining, since it is necessary to strictly adjust the position of each image sensor 30 and the spacer 32, a joining apparatus having an alignment function for adjusting the parallelism between them and the position in the horizontal direction is used. Since each image sensor 30 on the silicon wafer 47 is sealed by the spacer 32 and the glass substrate 38, the image sensor 30 is not contaminated by dust generated in the subsequent processes.

  In the next step, the glass substrate 38 and the silicon wafer 47 are diced for each image sensor 30 and separated into individual pieces. First, as shown in FIG. 7C, the silicon wafer 47 is fixed on a dicing tape 53 having an adhesive layer 53a on its upper surface, and a protective tape similarly having an adhesive layer 54a on the glass substrate 38. 54 is attached.

  Next, as shown in FIG. 7D, the glass substrate 38 is diced along the end face of each spacer 32 using a slicer. Further, as shown in FIG. 7E, the silicon wafer 47 is diced for each image sensor 30 using a dicer, and a large number of sensor packages 12 are collectively formed. The protective tape 54 remains attached to protect the cover glass 14 at the time of shipment. In addition, when a protective tape is not used during dicing, the protective tape is individually attached to each cover glass 14 after dicing.

  In the next inspection process, for example, functional inspection of each sensor package 12 is performed using a probe inspection apparatus. The sensor package 12 that has passed this function inspection is peeled off from the dicing tape 53 in the next storage step, stored in a tray, or attached to a carrier tape and ready for shipment. A large number of sensor packages 12 may be shipped in a state of being fixed on the dicing tape 53.

  As shown in FIG. 4, the completed sensor package is die-bonded on the assembly wiring board in a die-bonding process. As shown in FIGS. 9A and 10, the assembly wiring board 57 is formed in a rectangular shape by, for example, a glass epoxy base material, and a die bond region (adhering to which the sensor package 12 is die-bonded in a matrix shape on the upper surface. Part) 58 is provided. In each die bond region 58, the inner conductor pad 22 and the outer conductor pad 18 are formed in advance. The number of die bond regions 58 is not limited to 16, but may be more or less.

  A die bonder used in the die bonding process attaches a die attach film 61 to each die bond region 58 of the assembly wiring board 57. Next, the die bonder places the sensor package 12 on each die attach film 61 as shown in FIG. At this time, the protective tape 54 attached to the cover glass 14 of each sensor package 12 is peeled off. The collective wiring board 57 on which the sensor package 12 is placed is heated using a heating device such as an oven, and the die attach film 61 is cured. Thereby, each sensor package 12 is fixed on the collective wiring board 57.

  When using a paste or liquid die attach material, the height of each cover glass 14 on the assembly wiring board 57 is not uniform unless the coating thickness is strictly controlled. The upper surface of the cover glass 14 is not properly protected and is soiled by the sealing resin 17. However, by using the die attach film 61 having thickness uniformity as the die attach material, the height dimension of each cover glass 14 on the collective wiring board 57 does not vary. The upper surface can be protected more reliably, and the yield can be prevented from deteriorating due to contamination of the sealing resin 17 to the cover glass. The die attach film 61 may be bonded to each sensor package 12 in advance. Moreover, when the problem by the dispersion | variation in the height dimension of the cover glass 14 does not arise, a paste-like die attach material can also be used.

In the next cleaning step, for example, each sensor package 12 and the assembly wiring board 57 are cleaned using an O ₂ asher. This cleaning is performed in order to improve the wire bondability in the wire bond process described later and the resin adhesion in the sealing process.

  As shown in FIG. 9C, in the next wire bonding step, a wire bonder is used to connect between the input / output pads 31 of each sensor package 12 and the internal conductor pads 22 of each die bond region 58 by the bonding wires 13. Connected. This wire bonding step is preferably performed in a low loop so that the bonding wire 13 does not jump upward from the upper surface of the cover glass 14.

  Next, in the sealing process after the support setting process and the protection process, as shown in FIG. 9E, the upper surface of the assembly wiring board 57 and the outer periphery of each sensor package 12 are sealed with the sealing resin 17. The

  In the support setting process, as shown in FIG. 9D, each sensor package 12 is inserted into the support frame 15 such that the cover glass 14 is inserted into the opening 15a and the leg portion 15c is standing on the collective wiring board 57. Set from above each time.

  In the protection step, in order to protect the upper surface of each cover glass 14, a protection sheet 75 having an area larger than that of the three assembly wiring boards 57 is stuck in the cavity 68 a of the upper mold die 68. For example, a polyimide-based flexible and elastic plastic film having a thickness of about 80 to 100 μm is used for the protective sheet 75, and the protective sheet 75 is brought into close contact with the cavity 68 a by being evacuated in the upper mold die 68. .

  As shown in FIG. 11A, a transfer mold apparatus 64 is used for the sealing process. The transfer mold apparatus 64 includes a lower mold die 66 and an upper mold die 68 that is matched with the lower mold die 66. The lower mold die 66 includes a cavity 66a on which the collective wiring board 57 is placed, a gate 66b for supplying the sealing resin 17 into the cavity 66a, a cull 70 connected to the gate 66b, The plunger 72 moves up and down in the cull 70 and fills the cavity 66a with the sealing resin 17 from the gate 66b. The upper mold die 68 reduces the inflow pressure of the sealing resin 17 by reducing the cross-sectional area of the cavity 68a contacting the cover glass 14 of each sensor package 12 and the upper surface of the frame portion 15b of the support frame 15 and the gate 66b. A raised protrusion 68b is provided.

  As shown in FIG. 12, the lower mold die 66 and the upper mold die 68 have a size that can accommodate, for example, three collective wiring boards 57 at the same time, and 48 sensor packages 12 are sealed with resin at the same time. Can be stopped. Further, in order to prevent a filling error of the sealing resin 17, the gate 66 b, the cull 70, and the plunger 72 are preferably provided for each assembly wiring board 57. The number of collective wiring boards 57 that can be set at one time is not limited to three, and may be an appropriate number.

  A sealing process is performed in the following procedures, for example. First, the lower mold die 66 and the upper mold die 68 are preheated with a heater, and the three collective wiring boards 57 are placed in the cavity 66 a of the lower mold die 66. Next, a tablet of the sealing resin 17 made of a thermosetting resin, for example, an epoxy resin is inserted into the cal 70, and the upper mold die 68 is lowered as shown in FIG. 66. The upper surfaces of the cover glass 14 and the frame portion 15b of the support frame 15 are covered in close contact with the protective sheet 75.

  The sealing resin 17 is softened by the heat of the lower mold die 66. When the plunger 72 is moved upward, the sealing resin 17 that has been softened and reduced in viscosity is injected into the cavities 66a and 58a through the gate 66b and filled in the outer periphery of each sensor package 12. The height of the upper surface 15d of the frame portion 15b of the support frame 15 is the same as that of the upper surface of the cover glass 14 or higher than the upper surface of the cover glass 14, so that the upper mold die 68 and the lower mold die 66 The support frame 15 receives the pressing pressure applied to the sensor package 12. Thereby, breakage of the cover glass 14 and damage of the image sensor 30 can be prevented. Further, since the protective sheet 75 absorbs and adheres to variations in the height of each support frame 15 due to its elasticity and flexibility, the sealing resin 17 does not adhere to the upper surface of the cover glass 14.

  The protective sheet 75 is not limited to the polyimide type, but adheres to the cover glass 14, elasticity and flexibility to absorb the variation in the height of the cover glass 14, and when the sealing resin 17 is filled. Any one having heat resistance that can withstand this temperature can be used.

  After the sealing resin 17 is filled, when the mold clamping pressure is increased and held for several minutes, the sealing resin 17 is polymerized and cured. After the sealing resin 17 is cured, the upper mold die 68 is raised, and the resin-sealed collective wiring board 57 is taken out from the lower mold die 66. At that time, the runner which is a solidified resin remaining in the cull 70 and the gate 66b is removed, and the protective sheet 75 attached to the upper surface of the cover glass 14 is peeled off.

  As the epoxy resin, for example, those having the characteristics of spiral flow of 100 cm, flexural modulus of 28 GPa, and thermal expansion coefficient of 8 ppm / ° C. are suitable for transfer molding. In addition, when filling the epoxy resin, the heating temperature of the lower mold die 66 and the upper mold die 68 is set to 180 ° C. for 3 minutes.

  The sealing resin 17 immediately after molding is not sufficiently polymerized and the characteristics are not stable. Therefore, in the next post mold cure (PMC) process, the assembly wiring board 57 taken out from the transfer molding apparatus 64 is accommodated in an oven and heated at a high temperature to cure the sealing resin 17.

  After the sealing process, in the marking process, a manufacturer name, a product name, a manufacturing number, a lot number, and the like are printed on the sealing resin 17 with a laser marker.

  In the next singulation step (individualization step), the assembly wiring board 57 and the sealing resin 17 are separated into individual sensor packages 12. First, as shown in FIG. 9F, the upper surface of the assembly wiring board 57 (the surface on which the cover glass 14 is exposed) is attached onto the dicing tape 81. Next, as shown in FIG. 9G, using a dicer, the sealing resin 17 and the assembly wiring board 57 are diced for each sensor package 12 from the back side. Thereby, a large number of solid-state imaging devices 10 are collectively formed.

  In the next storage step, each solid-state imaging device 10 is peeled off from the dicing tape 81 by the storage device and stored in the tray, or is attached to the carrier tape and is ready for shipment. A large number of solid-state imaging devices 10 may be shipped in a state of being fixed on the dicing tape 81.

  In the above embodiment, the support frame 15 is individually set for each sensor package 12. However, for example, as shown in FIG. 13, the support frame 15 is set on a single wiring board 57. They may be connected to each other by beams 90 and 91 so that they can be set at once on all of the sensor packages 12 on the collective wiring board 57. In this case, the beams 90 and 91 are cut in the singulation process.

  In the above-described embodiment, the method of manufacturing the solid-state imaging device using the FLGA package has been described. However, the present invention is not limited to this. For example, a Fine pitch Ball Grid Array (FBGA) package that uses solder balls as external electrodes The present invention can also be applied to the used solid-state imaging device.

It is a perspective view which shows the external appearance of the solid-state imaging device manufactured using this invention. It is sectional drawing which shows the structure of a solid-state imaging device. It is a perspective view which shows the external appearance of a support frame. It is a flowchart which shows the manufacture procedure of a solid-state imaging device. It is a flowchart which shows the manufacture procedure of a sensor package. It is explanatory drawing which shows the spacer formation process of a sensor package. It is explanatory drawing which shows the board | substrate joining and dicing process of a sensor package. It is a perspective view which shows the external appearance shape of a glass substrate and a silicon wafer. It is explanatory drawing which shows the manufacturing process of a solid-state imaging device. It is a perspective view showing the external shape of the assembly wiring board, It is sectional drawing explaining operation | movement of a transfer mold apparatus. It is a top view of a lower mold die. It is a top view which shows the example of embodiment of a support frame.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Solid-state imaging device 11 Wiring board 12 Sensor package 13 Bonding wire 15 Support frame 15b Frame part 15c Leg part 17 Sealing resin 18 External conductor pad (external electrode)
22 Internal conductor pad (internal electrode)
29 Imaging chip 30 Image sensor 31 Input / output pad 57 Assembly wiring board 58 Die bond area 66 Lower mold die 66a Cavity 68 Upper mold die

Claims (3)

A sensor package comprising an imaging chip provided with an image sensor and an input / output pad, and a light-transmitting cover member that is attached to the imaging chip and seals the image sensor is provided as an assembly wiring board. A die bonding step of fixing to each of a plurality of fixed portions provided;
A wire bonding step of connecting each of the input / output pads and an internal electrode provided on the assembly wiring board corresponding to each of the sensor packages with a bonding wire;
A support frame having a frame portion that surrounds the periphery of the cover member at a position above the upper surface of the cover member and a leg portion that is installed on the collective wiring board and supports the frame portion is provided for each sensor package. Support setting process to set,
Each upper surface of the cover member and the lower surface of the collective wiring board are sandwiched between an upper mold die and a lower mold die, and sealed in a cavity formed between the upper mold die and the lower mold die. A sealing step of sealing the outer periphery of the sensor package by filling a stop resin;
A method for manufacturing a solid-state imaging device, comprising: a separation step of cutting the assembly wiring board and the sealing resin for each sensor package.   The method for manufacturing a solid-state imaging device according to claim 1, wherein the support frame is made of metal. An imaging chip provided with an image sensor and an input / output pad; and a sensor package having translucency and having a cover member attached to the imaging chip and sealing the image sensor;
A wiring board to which the sensor package is fixed so that the upper surface of the cover member is exposed;
Bonding wires that connect the input / output pads of the sensor package and the internal electrodes of the wiring board;
A support frame having a frame portion that surrounds the periphery of the cover member at a position above the upper surface of the cover member, and a leg portion that is installed on the wiring board and supports the frame portion;
A sealing resin for sealing the outer periphery of the sensor package so as not to block the upper surface of the cover member;
A solid-state imaging device comprising: an external electrode connected to the internal electrode and exposed to the outside from the sealing resin.

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