TWI403568B - Thin film for fabrication of semiconductor and method of fabricating semiconductor apparatus - Google Patents

Abstract

There is provided a new film for manufacturing a semiconductor device that is superior to prevent contamination of a semiconductor chip having an excellent balance of holding power during dicing a semiconductor wafer even where the semiconductor wafer is thin, peeling property when peeling the semiconductor chip that is obtained by dicing together with its adhesive layer, and low contamination property in which there is no attachment of cutting debris to the semiconductor chip. A film for manufacturing a semiconductor device that is used when manufacturing a semiconductor device has a base layer, a first pressure-sensitive adhesive layer that is provided on the base layer, a radiation curing-type second pressure-sensitive adhesive layer that is provided on the first pressure-sensitive adhesive layer and cured by radiation irradiation in advance, and an adhesive layer that is provided on the second pressure-sensitive adhesive layer.

Description

Thin film for semiconductor device manufacturing and method for manufacturing semiconductor device

The present invention relates to a thin film for semiconductor device manufacturing used in the manufacture of a semiconductor device, and more particularly to a series of processes, such as cutting a semiconductor wafer to form a semiconductor wafer, and then adhering the semiconductor wafer to an adherend. A thin film for manufacturing a semiconductor device used in the present invention. Further, the present invention relates to a method of manufacturing a semiconductor device using the thin film for semiconductor device manufacturing.

The semiconductor wafer on which the circuit pattern is formed is diced into a semiconductor wafer (cutting process) by adjusting the thickness by back grinding as needed. In the cutting process, in order to remove the cut layer, the semiconductor wafer is typically cleaned with a moderate hydraulic pressure (typically about 2 kg/cm ² ). Then, the semiconductor wafer is bonded to an adherend such as a lead frame with an adhesive. In this process, the adhesive is applied to a lead frame or semiconductor wafer. However, it is difficult to achieve uniformization of the adhesive layer by this method, and the application of the adhesive requires special equipment or takes a long time. Therefore, a dicing/bonding film for a wafer fixing adhesive layer required for die bonding is provided while adhering and holding a semiconductor wafer in a dicing process (for example, refer to Japanese special Kai-kai 60-57642).

In the dicing/wafer bonding film described in Patent Document 1, an adhesive release layer (pressure-sensitive adhesive layer) and a conductive adhesive layer are provided on a support film (base material layer). That is, after the semiconductor wafer is cut under the holding of the adhesive layer, the support film is stretched, the semiconductor wafer is peeled off together with the adhesive layer, each of which is recovered, and then fixed to the adherend such as a lead frame via the adhesive layer. .

The adhesive layer of the dicing/wafer bonding film is desired to have a good holding force for the semiconductor wafer and to peel the diced semiconductor wafer and the adhesive layer integrally from the supporting substrate in order not to cause dicing or dimensional error or the like. Good peelability. Further, it is desirable that the adhesive layer of the dicing/wafer bonding film has a good holding force for the lead frame, adhesion to the adhesive for preventing scattering of the semiconductor wafer which is diced during dicing, and chipping generated during cutting. It is not attached to the low contamination of the semiconductor wafer with the adhesive layer.

However, it is not easy to exhibit these characteristics in a good balance. In particular, in recent years, semiconductor wafers have been thinned and expanded in size for the purpose of increasing the capacity, so that the substrate layer and the adhesive layer are satisfied. The requirements have become more difficult. That is, since the conventional dicing/wafer bonding film does not have various characteristics corresponding to functions, it is not possible to exhibit the characteristics in a good balance.

Therefore, in order to solve these problems, various improvements have been proposed. For example, Patent Document 2 discloses a dicing adhesive tape obtained by laminating a dicing sheet, a release film, a wafer attaching film, and a release film in this order. In the adhesive tape for dicing, the release film is newly provided on the dicing sheet, and the peeling force of the release film and the wafer-attached film is smaller than the peeling force of the release film and the dicing sheet, thereby being picked up at the time of picking up the semiconductor wafer The wafer attaching film can be easily peeled off together with the semiconductor wafer. Further, since the cutting frame (cutting ring) is attached to the cutting piece, the fixing function of the cutting ring is ensured. In other words, in the adhesive tape for dicing described in Patent Document 2, by providing a release film between the dicing sheet and the wafer-attached film, the performance of the dicing/wafer bonding film which has been conventionally sought is obtained, that is, the glue at the time of cutting A structure with different functions such as viscosity and peelability at the time of picking.

However, even in the dicing adhesive tape described in Patent Document 2, chips are generated from the dicing sheet at the time of dicing of the semiconductor wafer, and the chips are burred ( , burr) or fine whiskers ( The form of the beard is attached to the side surface of the semiconductor wafer or the like, whereby there is a problem that the manufacturing yield of the semiconductor device is lowered.

Patent Document 1: Japanese Laid-Open Patent Publication No. 60-57642

Patent Document 2: Japanese Laid-Open Patent Publication No. 2006-203000

The present invention has been made to solve the above problems, and an object of the invention is to provide a holding force when cutting a thin semiconductor wafer even when a semiconductor wafer is thin, and to integrally peel a semiconductor wafer obtained by cutting from an adhesive layer thereof. A thin film and a method for producing a semiconductor device which are excellent in the balance property of the low-contamination property in which the chips are not adhered to the semiconductor wafer, and which are excellent in contamination prevention of the semiconductor wafer.

In order to solve the above problems, the applicant and the like have studied a thin film for semiconductor device manufacturing and a method for manufacturing a semiconductor device. As a result, it has been found that the above object can be attained by adopting the following constitution, and the present invention has been completed.

In order to solve the above problems, a film for semiconductor production used in the production of a semiconductor is characterized in that the film for semiconductor manufacturing of the present invention comprises: a substrate layer; and a first bond provided on the substrate layer a radiation-curable second adhesive layer disposed on the first adhesive layer and previously cured by irradiation with radiation; and an adhesive disposed on the second adhesive layer Floor.

A conventional dicing/wafer bonding film used for the manufacture of a semiconductor device generally has a structure in which a pressure-sensitive adhesive layer and an adhesive layer are sequentially laminated on a substrate layer. Further, the pressure-sensitive adhesive layer is required to have adhesiveness capable of preventing wafer scattering of the semiconductor wafer at the time of dicing of the semiconductor wafer, and peeling property which can be easily peeled off from the adhesive layer at the time of picking up the semiconductor wafer. That is, the adhesive layer requires the opposite performance in the cutting process and the picking process.

On the other hand, in the present invention, according to the above configuration, by sequentially providing the first adhesive layer and the second adhesive layer on the substrate layer, it is possible to achieve the adhesive layer of the conventional dicing/wafer bonding film. The adhesiveness at the time of cutting is separated from the function of the peeling property at the time of picking. That is, since the first pressure-sensitive adhesive layer is used to adhere and fix the second pressure-sensitive adhesive layer, it is possible to prevent the wafer of the semiconductor wafer from scattering when the semiconductor wafer bonded to the adhesive layer is diced. Since the first adhesive layer does not require peeling property at the time of picking up, the structure in which the first adhesive layer is provided on the base material layer functions as a carrier tape. On the other hand, the second adhesive layer is preliminarily cured by irradiation with radiation, and thus exhibits good peelability to the adhesive layer. Therefore, picking up of the semiconductor wafer can be performed favorably. In addition, the process of irradiating the radiation before picking up may also be omitted.

Further, in the conventional dicing/wafer bonding film, when the semiconductor wafer is diced, the dicing depth of the dicing blade or the like is advanced to reach the pressure-sensitive adhesive layer or the substrate layer. However, when the cutting proceeds to a part of the adhesive layer, a part of the adhesive layer on the cut surface sometimes becomes a burr or a whisker to adhere to the boundary between the adhesive layer and the adhesive layer. Further, when the cutting proceeds to the base material layer, filamentous chips may be generated to contaminate the semiconductor wafer. However, in the present invention, since the first adhesive layer and the second adhesive layer are laminated on the base material layer, the cutting depth of the cutting blade or the like does not have to proceed to the first adhesive layer, and The second adhesive layer stops. Further, the second adhesive layer is preliminarily cured by irradiation with radiation, so that it is possible to suppress a part of the second adhesive layer from being burred on the cut surface to adhere to the boundary between the second adhesive layer and the adhesive layer. As a result, the semiconductor wafer with the adhesive layer can be picked up well. In addition, the cutting does not have to be carried out to the substrate layer, so that no filament-like chips are produced. Therefore, the film for semiconductor device manufacturing of the present invention can achieve low contamination of the semiconductor wafer.

In the above configuration, preferably, the second adhesive layer and the adhesive layer are disposed so as to fall at least inside the cutting ring sticking portion in the first adhesive layer, the plane of the adhesive layer The shape is larger than the second adhesive layer, and the adhesive layer is disposed to cover the entire second adhesive layer, and further, the adhesive layer is not located on the periphery of the second adhesive layer And disposed on the first adhesive layer.

According to this configuration, since the cutting ring can be attached to the first pressure-sensitive adhesive layer which is not required to be peeled off during picking up, the cutting ring can be reliably fixed at the time of cutting. Further, when the dicing ring after use is peeled off as compared with the case where the dicing ring is attached to the adhesive layer, the occurrence of adhesive adhesion can be suppressed. In addition, the planar shape of the adhesive layer is larger than that of the second adhesive layer, and is disposed in such a manner as to cover the entire second adhesive layer. Further, the peripheral portion of the adhesive layer is not provided on the second adhesive layer but on the first adhesive layer, and is a firmly adhesive structure, so that, for example, the adhesive can be prevented from being cut from the second adhesive layer. The upper peeling causes curling.

In the above configuration, preferably, a structure (for example, a dicing film) in which the base material layer, the first pressure-sensitive adhesive layer, and the second pressure-sensitive adhesive layer are stacked is calculated by E×I The bending rigidity S is in the range of 5.0 × 10 ⁴ to 7.0 × 10 ⁵ . (wherein I is a secondary moment represented by b × T ³ /12, b is a width of the test piece of the structure of 10 (mm), and T is a thickness (mm) of the structure) E is the tensile storage elastic modulus (Pa) at 25 ° C of the structure. By setting the bending rigidity S to 5.0 × 10 ⁴ or more, the rigidity of the structure can be maintained, and the wafer can be pasted without wrinkles. On the other hand, by setting the bending rigidity S to 7.0 × 10 ⁵ or less, the structure is appropriately bent at the time of picking up, and stable picking can be achieved.

In the above configuration, the peel strength X between the second pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer is preferably in the range of 0.01 N/20 mm to 0.2 N/20 mm. By setting the peeling strength X between the second pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer to 0.01 N/20 mm or more, for example, at the time of dicing of the semiconductor wafer, peeling between the two can be prevented, and wafer scattering can be prevented from occurring in the semiconductor wafer. On the other hand, by setting the peeling strength X to 0.2 N/20 mm or less, even if the irradiation process of the radiation is omitted, the semiconductor wafer can be picked up favorably.

In the above configuration, it is preferable that the peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is in the range of 0.2 N/20 mm to 10 N/20 mm. By setting the peeling strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer to 0.2 N/20 mm or more, for example, the semiconductor wafer or the semiconductor wafer can be reliably fixed at the time of cutting. Further, by setting the peeling strength Y to 10 N/20 mm or less, the second adhesive layer can be peeled off from the first adhesive layer, and can be composed of the base material layer and the first adhesive layer. The laminated film of the carrier tape is reused.

In the above configuration, a ratio of the peeling strength X between the second adhesive layer and the adhesive layer to the peel strength Y between the first adhesive layer and the second adhesive layer is preferable (Y/ X) is in the range of 3 to 500. By setting the ratio (Y/X) of the peeling strength X to the peeling strength Y to 3 or more, the peeling interface at the time of picking up the semiconductor wafer can be located at the boundary between the second adhesive layer and the adhesive layer. On the other hand, by setting the ratio (Y/X) to 500 or less, it is possible to suppress wafer scattering at the time of dicing or curling of the adhesive layer, and it is possible to stably cut.

In the above configuration, it is preferable that the thickness of the second pressure-sensitive adhesive layer is in the range of 10 μm to 100 μm. By setting the thickness of the second pressure-sensitive adhesive layer to 10 μm or more, it is possible to prevent the cutting depth of the cutting blade from reaching the first pressure-sensitive adhesive layer at the time of cutting. On the other hand, by setting the thickness of the second pressure-sensitive adhesive layer to 100 μm or less, stable pickup of the semiconductor wafer can be performed.

In the above configuration, it is preferable that the peel strength between the first pressure-sensitive adhesive layer and the SUS304-BA plate is in the range of 0.2 N/20 mm to 11 N/20 mm. By setting the peeling strength between the first pressure-sensitive adhesive layer and the SUS304-BA plate to 0.2 N/20 mm or more, the cutting ring can be reliably adhered and fixed, and the pick-up can be performed satisfactorily. On the other hand, by setting the peeling strength to 11 N/20 mm or less, when the dicing ring after use is peeled off from the first pressure-sensitive adhesive layer, it is possible to reduce the occurrence of adhesive residue on the dicing ring.

In the above configuration, preferably, the second adhesive layer is formed by curing a precursor of the second adhesive layer by irradiation of radiation to form a bond on the first adhesive layer. Agent layer.

In the above configuration, preferably, the second adhesive layer is a bond formed by curing the radiation by irradiating radiation after the precursor of the second adhesive layer is disposed on the first adhesive layer. Agent layer.

In the above configuration, it is preferable that the adhesive layer is an adhesive layer formed on a second adhesive layer which is previously cured by irradiation with radiation.

In the above configuration, it is preferable that the adhesive layer is provided on a precursor of the second adhesive layer before curing by irradiation with radiation.

In the above configuration, it is preferable that the adhesive layer is formed of at least an epoxy resin, a phenol resin, and an acrylic resin.

In the above configuration, it is preferred that the acrylic resin has a glass transition temperature in the range of -30 ° C to 10 ° C. By setting the glass transition temperature of the acrylic resin to -30 ° C or higher, it is possible to maintain a storage elastic modulus at a high temperature (for example, 100 ° C to 200 ° C) of the adhesive layer. On the other hand, by setting the glass transition temperature to 10 ° C or lower, good adhesion and adhesion to a semiconductor wafer can be achieved.

In the above configuration, it is preferable that the second pressure-sensitive adhesive layer is formed of at least an acrylic polymer.

In the method for manufacturing a semiconductor device according to the present invention, in order to solve the above problems, a method for manufacturing a semiconductor device using the thin film for semiconductor device manufacturing described above is characterized in that the method includes at least the following process: a process of crimping a semiconductor wafer on the adhesive layer of a film for manufacturing, cutting the semiconductor wafer together with the adhesive layer to form a process of forming a semiconductor wafer, wherein a dicing depth of the cut is at the second adhesive Stopping the layer, and a process of peeling the semiconductor wafer from the second adhesive layer together with the adhesive layer, and from the crimping process of the semiconductor wafer to the stripping process of the semiconductor wafer, The second adhesive layer illuminates the radiation.

In the above method, a semiconductor device is produced by using a film for semiconductor device manufacturing in which a first pressure-sensitive adhesive layer, a second pressure-sensitive adhesive layer, and an adhesive layer are laminated in this order on a base material layer. Here, the first adhesive layer adhesively fixes the second adhesive layer, so that the wafer of the semiconductor wafer can be prevented from scattering when the semiconductor wafer is diced. Further, in the dicing of the semiconductor wafer, since the dicing depth of the dicing blade is stopped at the second adhesive layer, it is possible to prevent the chips generated when the substrate layer is diced from becoming burrs or whiskers and adhering to the semiconductor wafer. In addition, the second adhesive layer is cured by irradiating the radiation in advance, so that it is possible to suppress a part of the second adhesive layer on the cut surface from becoming a burr or a whisker and adhering to the boundary between the second adhesive layer and the adhesive layer. . As a result, the semiconductor wafer with the adhesive layer can be picked up well.

Further, since the second pressure-sensitive adhesive layer is previously cured by irradiation with radiation, it exhibits good peelability to the adhesive layer. Therefore, picking up of the semiconductor wafer can be performed favorably. In addition, in the process from the crimping process of the semiconductor wafer to the stripping process of the semiconductor wafer, it is not necessary to irradiate the second adhesive layer with radiation, and thus the number of processes can be reduced.

Effect of the invention

The present invention achieves the following effects by the means described above. In other words, according to the film for producing a semiconductor device of the present invention, the first pressure-sensitive adhesive layer, the second pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer are sequentially disposed on the base material layer, and the first pressure-sensitive adhesive layer is provided. The two adhesive layers reliably adhere to the fixing function and are cured by irradiating the second adhesive layer with radiation, thereby imparting good peeling property to the adhesive layer. That is, the adhesiveness at the time of cutting required for the adhesive layer of the conventional dicing/wafer bonding film and the peeling property at the time of picking were functionally separated. As a result, even when the semiconductor wafer is made thinner and larger, it is possible to obtain a film for semiconductor device production which is excellent in the holding force when the semiconductor wafer is diced and the peelability at the time of picking up the semiconductor wafer. Further, at the time of cutting, it is not necessary to carry out the cutting depth to the base material layer, but to stop the second adhesive layer, so that generation of chips can be suppressed, and the chips can be reduced from adhering to the semiconductor wafer. That is, according to the present invention, it is possible to provide a film for semiconductor device production which is excellent in low contamination. Further, according to the method of manufacturing a semiconductor device of the present invention, the semiconductor device can be manufactured by using the thin film for semiconductor device manufacturing, and the yield can be improved.

The above described features and advantages of the present invention will be more apparent from the following description.

detailed description

(film for semiconductor device manufacturing)

Hereinafter, a film for semiconductor device manufacturing according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. 1 is a schematic cross-sectional view showing a film for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 2 is a plan view of the semiconductor device manufacturing film viewed from the side of the spacer.

As shown in FIG. 1, the film 10 for semiconductor device production has a configuration in which at least the first pressure-sensitive adhesive layer 12, the second pressure-sensitive adhesive layer 13, and the pressure-sensitive adhesive layer 14 are provided on the base material layer 11 in this order. Further, as shown in FIG. 1, the film 11 for semiconductor device manufacturing of the present invention may be provided with a separator 15 for protecting the surfaces of the first pressure-sensitive adhesive layer 12 and the pressure-sensitive adhesive layer 14. Further, the base material layer 11 and the first pressure-sensitive adhesive layer 12 are used to adhere and fix the second pressure-sensitive adhesive layer 13 and a dicing ring to be described later, and function as a carrier tape.

[Substrate layer]

The constituent material of the base material layer 11 is not particularly limited, and examples thereof include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, and embedded. Polyolefin, homopolypropylene, polybutene, polymethylpentene, etc., ethylene-vinyl acetate copolymer, ethylene-propylene copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymerization , ethylene-(meth) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate Polyesters such as glycol esters, polycarbonates, polyimines, polyetheretherketones, polyimines, polyetherimine, polyamines, wholly aromatic polyamines, polyphenylene sulfides, aromatics A plastic film composed of polyamide (paper), glass, glass cloth, fluorine-containing resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyalkylene resin, a mixture thereof, or the like. Moreover, as a material of the base material layer 11, a polymer such as a crosslinked product of the above resin may be mentioned. The plastic film may be used without stretching, or may be used after uniaxial or biaxial stretching treatment as needed.

In order to improve adhesion to the first pressure-sensitive adhesive layer 12, retention, and the like, the surface of the base material layer 11 may be subjected to a conventional surface treatment. Examples of the method include chemical or physical treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, and ionizing radiation treatment, and a primer (for example, a binder described later) coating treatment.

The constituent material of the base material layer 11 can be appropriately selected from the same or different materials. In addition, a plurality of materials may be used in combination as needed. Further, in order to impart antistatic ability, the base material layer 11 may be formed by steaming a conductive material having a thickness of about 30 angstroms to about 500 angstroms formed of a metal, an alloy, or an oxide thereof on the plastic film. Plated film. Further, a laminate or the like obtained by laminating the films or other films may be used. In addition, the base material layer 11 may be a single layer or a laminated film obtained by laminating two or more layers of a film or the like using the above-mentioned materials.

The thickness of the base material layer 11 is not particularly limited as long as it does not break at the time of expansion described later, and can be appropriately set. It is generally preferably in the range of from about 5 μm to about 200 μm.

[First adhesive layer]

The first adhesive layer 12 is provided on the substrate layer 11, and is a layer for adhesively fixing the second adhesive layer 13 and the dicing ring. In Fig. 1, the first adhesive layer 12 is provided on the entire rectangular substrate layer 11, and the planar shape is rectangular, but may be circular. Further, at the time of picking up the semiconductor wafer to be described later, since the second pressure-sensitive adhesive layer 13 and the pressure-sensitive adhesive layer 14 are peeled off, the first pressure-sensitive adhesive layer 12 is not particularly required to have peeling properties at the time of picking up. That is, the basic property of the first adhesive layer 12 is adhesiveness. Therefore, the constituent material of the first pressure-sensitive adhesive layer 12 is not particularly limited, and a conventionally known material can be employed.

As the binder constituting the first pressure-sensitive adhesive layer 12, a pressure sensitivity adhesive which is generally used can be used. Specific examples thereof include various binders such as an acrylic pressure-sensitive adhesive, a rubber pressure-sensitive adhesive, a polyoxyalkylene-based pressure-sensitive adhesive, and a polyvinyl ether-based pressure-sensitive adhesive. In view of the cleaning property of the semiconductor wafer or the semiconductor package as the object to be cut, the semiconductor wafer after peeling, and the organic solvent such as ultrapure water or alcohol, it is preferable to use (meth) Acrylic polymer as a (meth)acrylic binder for a base polymer. Further, the term "(meth)", for example, a (meth)acrylic polymer means both an acrylic polymer and a methacrylic polymer. In this case, the compounds exemplified below are also the same.

Examples of the (meth)acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, and sec-butyl ester). S-butyl ester), t-butyl ester, amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, isodecyl ester, decyl ester, Isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, octadecyl ester, eicosyl ester, etc., having 1 to 30 carbon atoms, especially It is a linear or branched alkyl ester having 4 to 18 carbon atoms, a cycloalkyl (meth)acrylate (for example, cyclopentyl ester, cyclohexyl ester, etc.), or a hydroxyalkyl (meth)acrylate (for example). , hydroxyethyl ester, hydroxybutyl ester, hydroxyhexyl ester, etc.), glycidyl (meth)acrylate, (meth)acrylic acid, itaconic acid, maleic anhydride, (meth)acrylamide, N-hydroxyl a (meth) acrylamide, an alkylaminoalkyl (meth) acrylate (for example, dimethylaminoethyl methacrylate, t-butylaminoethyl methacrylate, etc.), a vinyl acetate, a styrene Or two or more (meth) propylene as a monomer component Acid polymers, etc.

The (meth)acrylic polymer may contain a monomer component which is copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester, as needed, in order to improve cohesive force, adhesiveness, and the like. unit. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, and the like. Carboxyl group-containing monomer; anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxyl (meth)acrylate Butyl ester, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxy-12 (meth)acrylate a hydroxyl group-containing monomer such as an alkyl ester or (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamidoamino-2-methyl a sulfonic acid group-containing monomer such as propanesulfonic acid, (meth) propylene decyl propyl sulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene phthaloxy naphthalene sulfonic acid; A phosphate group-containing monomer such as hydroxyethyl ester; acrylamide or acrylonitrile. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of these copolymerizable monomers used is preferably 30% by weight or less, and more preferably 15% by weight or less based on the total of the monomer components.

Moreover, in order to carry out crosslinking, the (meth)acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as needed. By crosslinking the base polymer, the self-supporting property of the pressure-sensitive adhesive layer is improved, so that significant deformation of the pressure-sensitive adhesive sheet can be prevented, and the flat state of the first pressure-sensitive adhesive layer 12 can be easily maintained.

Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl Alcohol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, Epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may also be used alone or in combination of two or more. The amount of use of the polyfunctional monomer is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion properties and the like.

The (meth)acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, photopolymerization or the like. In particular, when a radiation such as an ultraviolet ray or an electron beam is irradiated, it is preferred to carry out a liquid composition obtained by mixing a monomer component and a photopolymerization initiator with a urethane (meth) acrylate oligomer. The (meth)acrylic polymer is synthesized by casting and photopolymerizing.

The urethane (meth) acrylate oligomer is a bifunctional compound having a number average molecular weight of from about 500 to about 100,000, preferably from 1,000 to 30,000, and an ester ‧ diol as a main skeleton. Further, examples of the monomer component include morpholine (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, and dicyclopentenyl ( Dicyclopentenyl (metha) acrylate, methoxylated cyclotriene (meth) acrylate, and the like. The mixing ratio of the urethane (meth) acrylate oligomer to the monomer component is preferably oligomer: monomer component = 95 to 5: 5 to 95 (% by weight), more preferably 50 to 70: 50 ~30 (% by weight). When the content of the urethane (meth) acrylate oligomer is high, the viscosity of the liquid composition becomes high, and thus it tends to be difficult to polymerize.

The weight-average molecular weight of the (meth)acrylic polymer is preferably from about 100,000 to about 1,000,000, more preferably from about 150,000 to about 900,000, from the viewpoint of cohesive force.

Further, in order to increase the number average molecular weight of the (meth)acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used in the binder. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, a melamine resin, a urea resin, an epoxy resin, a polyamine or a carboxyl group-containing polymer. In the case of using an external crosslinking agent, the amount thereof to be used is appropriately determined depending on the balance with the base polymer to be crosslinked and the use as a binder. It is generally preferably blended in an amount of from about 1 part by weight to about 5 parts by weight based on 100 parts by weight of the base polymer. Further, as the binder, in addition to the above-mentioned components, additives such as various conventionally known tackifiers and anti-aging agents may be used.

The thickness of the first pressure-sensitive adhesive layer 12 is not particularly limited, and is preferably in the range of 1 μm to 30 μm, more preferably in the range of 2 μm to 25 μm, and particularly preferably in the range of 3 μm to 20 μm from the viewpoint of adhesion.

The peel strength between the first adhesive layer 12 and the dicing ring is preferably in the range of 0.2 N/20 mm to 10 N/20 mm, more preferably in the range of 0.3 N/20 mm to 9.5 N/20 mm, and particularly preferably 0.5 N. In the range of /20mm~9N/20mm. By setting the peeling strength between the first pressure-sensitive adhesive layer 12 and the cutting ring to 0.2 N/20 mm or more, the cutting ring can be reliably adhered and fixed, and the cutting can be performed favorably. On the other hand, by setting the peeling strength to 10 N/20 mm or less, it is possible to peel off the used cutting ring from the first pressure-sensitive adhesive layer while suppressing the occurrence of adhesive residue.

Further, the first pressure-sensitive adhesive layer 12 may contain various additives (for example, a coloring agent, a thickener, an extender, a filler, a tackifier, a plasticizer) insofar as the effects of the present invention are not impaired. , anti-aging agents, antioxidants, surfactants, cross-linking agents, etc.).

[Second adhesive layer]

The second adhesive layer 13 is disposed on the first adhesive layer 12. The second adhesive layer 13 functions to prevent the cutting depth of the dicing blade or the like from reaching the base material layer 11 or the first adhesive layer 12 when the semiconductor wafer is diced. Therefore, it is possible to prevent the generation of the filamentous chips generated when the base material layer 11 is cut. As a result, contamination of the semiconductor wafer can be reduced. In addition, it is also possible to prevent the occurrence of burrs generated when the first adhesive layer 12 is cut.

In addition, the second adhesive layer 13 is formed of at least a radiation curable adhesive and is preliminarily cured by irradiation of radiation. Therefore, the adhesive force of the second adhesive layer 13 is lower than that of the usual adhesive layer, and the peeling property to the adhesive layer 14 is excellent. That is, the second pressure-sensitive adhesive layer 13 functions to improve the pick-up property of the semiconductor wafer. In addition, the burr can be reduced even if it is partially cut by the cutting blade during cutting. As a result, no adhesive is attached to the boundary between the second adhesive layer 13 and the adhesive 14 to hinder peeling of both at the time of picking up. Further, examples of the radiation include X-rays, ultraviolet rays, and electron beams.

The area where the second adhesive layer 13 is provided is preferably the inner side of the pasting portion 18 of the cutting ring on the first adhesive layer 12. For example, as shown in FIG. 2, in the case where the planar shape of the second adhesive layer 13 is circular, the diameter thereof is preferably smaller than the inner diameter of the cutting ring. Thereby, it is sufficient that the first adhesive layer 12 has a property of reliably fixing the second adhesive layer 13 and the dicing ring (i.e., adhesiveness), regardless of the peeling property at the time of pickup.

The second adhesive layer 13 may be disposed on the entire first adhesive layer 12, but as shown in Fig. 1, it is preferably disposed so as to fall inside the bonded portion of the cutting ring. Thereby, the cutting ring can be attached to the first adhesive layer 12 without being disposed on the second adhesive layer 13. Thereby, it is sufficient that the peeling property at the time of picking up the semiconductor wafer of the second adhesive layer 13 is good, and the adhesive property to the dicing ring is not required.

The second adhesive layer 13 is an adhesive layer which is provided on the first adhesive layer 12 and which is previously cured by irradiation of radiation. When the second adhesive layer 13 is radiation-cured by irradiation of ultraviolet rays, the volume of the second adhesive layer 13 is reduced due to the formation of the crosslinked structure. Therefore, for example, when the radiation curing of the second adhesive layer 13 is performed after bonding with the first adhesive layer 12, the substrate layer 11 and the first paste are adhered due to the volume shrinkage of the second adhesive layer 13. The mixture layer 12 applies stress, sometimes causing warpage. However, if it is previously cured by radiation, it is possible to prevent unnecessary stress from being applied to the base layer 11 and the like, and it is possible to obtain a film for manufacturing a semiconductor device without warpage.

However, the precursor of the second adhesive layer 13 (hereinafter referred to as "second adhesive layer precursor") may be laminated on the first adhesive layer 12, and the second adhesive layer precursor may be applied. The object is irradiated with radiation to cure it to form a second adhesive layer 13. At this time, the laminated state in which the adhesion between the first adhesive layer 12 and the second adhesive layer 13 is not excessively damaged can be maintained. As a result, it is possible to suppress an excessive decrease in the adhesion of the second adhesive 13 . Alternatively, after the adhesive layer 14 is laminated on the second adhesive layer precursor, the second adhesive layer precursor may be irradiated with radiation to be cured to form the second adhesive layer 13.

As the radiation curable type binder, a binder having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. More specifically, as the radiation curable pressure-sensitive adhesive, for example, the acrylic pressure-sensitive adhesive, rubber-based pressure-sensitive adhesive, polyoxyalkylene-based pressure-sensitive adhesive, polyvinyl ether-based pressure-sensitive adhesive, or the like can be exemplified. A radiation-curable adhesive obtained by blending a radiation curable monomer component or a radiation curable oligomer component in a general pressure-sensitive adhesive. The radiation-curable pressure-sensitive adhesive is preferably an acrylic polymer from the viewpoints of cleaning, such as semiconductor wafer or glass, which are cleaned and washed by an organic solvent such as ultrapure water or alcohol, and which is resistant to contamination. An acrylic adhesive as a base polymer or a polymer main component.

The acrylic polymer preferably contains acrylic acid represented by CH ₂ =CHCOOR (wherein R is an alkyl group having 6 to 10 carbon atoms, more preferably 8 to 9 carbon atoms) with respect to the total amount of the acrylic polymer. An acrylic polymer composed of an alkyl ester and a monomer composition containing a hydroxyl group-containing monomer and containing no carboxyl group-containing monomer. In the alkyl acrylate, when the number of carbon atoms of the alkyl group is less than 6, the peeling force is excessively increased and the pick-up property may be lowered. On the other hand, when the number of carbon atoms of the alkyl group exceeds 10, the adhesiveness or adhesion to the adhesive layer 14 is lowered, and as a result, wafer scattering occurs at the time of dicing.

The alkyl acrylate may specifically be exemplified by hexyl acrylate, heptyl acrylate, octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, decyl acrylate, isodecyl acrylate, decyl acrylate, A linear or branched alkyl acrylate having an alkyl group having 6 to 10 carbon atoms (particularly, 8 to 9 carbon atoms) such as isodecyl acrylate. These monomers may be used singly or in combination of two or more. Further, among the alkyl acrylates, an alkyl acrylate having an alkyl group having 8 to 9 carbon atoms is particularly preferable, and more specifically, 2-ethylhexyl acrylate or isobutyl acrylate is used from the viewpoint of pick-up property. Ester, isodecyl acrylate is most suitable.

The compounding amount of the alkyl acrylate is preferably 50% by weight or more, and more preferably 70% by weight to 90% by weight based on the total amount of the acrylic polymer. When the compounding amount of the alkyl acrylate is less than 50% by weight, the peeling force becomes excessively large, and the pick-up property may be lowered.

Among the acrylic polymers, a hydroxyl group-containing monomer copolymerizable with the alkyl acrylate is preferably used as an essential component. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and (methyl). 6-hydroxyhexyl acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxydodecyl (meth)acrylate, (methyl) Acrylic acid (4-hydroxymethylcyclohexyl) methyl ester or the like. The hydroxyl group-containing monomers may be used singly or in combination of two or more.

The compounding amount of the hydroxyl group-containing monomer is preferably in the range of 1% by weight to 30% by weight, and more preferably in the range of 3% by weight to 10% by weight based on the total amount of the monomer component. When the amount of the hydroxyl group-containing monomer is less than 1% by weight, the cohesive force of the binder may be lowered, and the pick-up property may be lowered. On the other hand, when the content exceeds 30% by weight, the polarity of the binder may increase, and the interaction with the adhesive layer may increase, whereby the pickup property may be lowered.

Here, as the monomer component, an acrylate other than the alkyl acrylate represented by the above chemical formula can be used for the acrylic polymer. Examples of such an acrylate include an alkyl acrylate other than the alkyl acrylate represented by the chemical formula, an acrylate having an aromatic ring (such as an aryl acrylate such as phenyl acrylate), and an acrylic acid having an alicyclic hydrocarbon group. An ester (cycloalkyl acrylate such as cyclopentyl acrylate or cyclohexyl acrylate, isobornyl acrylate or the like). Such acrylates may be used singly or in combination of two or more. Further, among these, the other alkyl acrylate and cycloalkyl acrylate are suitable, and in particular, other alkyl acrylates may be suitably used.

As the other alkyl acrylate, for example, methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, sec-butyl acrylate, tert-butyl acrylate, acrylic acid may be mentioned. An alkyl acrylate having an alkyl group having 5 or less carbon atoms such as amyl ester or isoamyl acrylate; undecyl acrylate, dodecyl acrylate, tridecyl acrylate, tetradecyl acrylate, and acrylic acid An alkyl acrylate having an alkyl group having an alkyl group such as an alkyl ester, octadecyl acrylate or an amyl acrylate such as 11 or more (preferably 11 to 30).

The compounding amount of the acrylate is preferably 50% by weight or more, and more preferably 70% by weight to 90% by weight based on the total amount of the monomer components. When the amount of the acrylate is less than 50% by weight, the peeling force of the second pressure-sensitive adhesive layer 13 may excessively increase.

The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl acrylate or the hydroxyl group-containing monomer, as needed, in order to improve cohesive force, heat resistance, and the like. Examples of other monomer components copolymerizable include methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, and isobutyl methacrylate. , methacrylate such as sec-butyl methacrylate or t-butyl methacrylate; anhydride monomers such as maleic anhydride and itaconic anhydride; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylic acid hydrazine A sulfonic acid group-containing monomer such as amino-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate, or (meth)acryloxynaphthalenesulfonic acid ; phosphine-based monomer such as acrylofluorene-2-hydroxyethyl phosphate; styrene monomer such as styrene, vinyl toluene or α-methyl styrene; ethylene, butadiene, isoprene, isobutylene, etc. An olefin or a diene; a halogen atom-containing monomer such as vinyl chloride; a fluorine atom-containing monomer such as a fluorine-containing (meth) acrylate; acrylamide or acrylonitrile. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.

However, in the present embodiment, it is important not to use a carboxyl group-containing monomer. When a carboxyl group-containing monomer is used, the carboxyl group reacts with the epoxy group in the epoxy resin in the adhesive layer 14, and the adhesiveness of the second adhesive layer 13 and the adhesive layer 14 is improved, and the peeling property of both is improved. decline. Examples of such a carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like.

The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can also be carried out by any means such as solution polymerization (for example, radical polymerization, anionic polymerization, cationic polymerization, etc.), emulsion polymerization, bulk polymerization, suspension polymerization, photopolymerization (for example, ultraviolet (UV) polymerization, etc.). From the viewpoint of preventing contamination of a clean adherend or the like, the content of the low molecular weight substance is preferably small. From this point of view, the weight average molecular weight of the acrylic polymer is preferably from about 350,000 to about 1,000,000, more preferably from about 450,000 to about 800,000.

Further, in order to increase the weight average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used in the second pressure-sensitive adhesive layer 13. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent to carry out a reaction. In the case of using an external crosslinking agent, the amount thereof to be used is appropriately determined depending on the balance with the base polymer to be crosslinked and the use as a binder. It is preferably 10 parts by weight or less, more preferably 0.1 parts by weight to 8 parts by weight, per 100 parts by weight of the base polymer. Further, in the binder, various additives such as a tackifier or an anti-aging agent may be used in addition to the components as needed.

Examples of the ultraviolet curable monomer component to be blended include a urethane oligomer, a urethane (meth) acrylate, a trimethylolpropane tri(meth) acrylate, and a tetrahydroxy group. Methyl methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate , 1,4-butanediol di(meth)acrylate, and the like. Further, examples of the ultraviolet curable oligomer component include various oligomers such as urethanes, polyethers, polyesters, polycarbonates, and polybutadienes, and the weight average molecular weight thereof. Oligomers in the range of from about 100 to about 30,000 are suitable. The blending amount of the ultraviolet curable monomer component or the oligomer component can be appropriately determined according to the type of the second pressure-sensitive adhesive layer 13 to reduce the adhesive strength. In general, it is preferably in the range of about 5 parts by weight to about 500 parts by weight, more preferably about 40 parts by weight to about 150 parts by weight, based on 100 parts by weight of the base polymer such as an acrylic polymer constituting the binder. .

Further, as the radiation curable pressure-sensitive adhesive, in addition to the addition type radiation-curable pressure-sensitive adhesive described above, it is also possible to use a carbon-carbon double bond in a polymer side chain or a main chain or at a main chain terminal. An intrinsic radiation curable adhesive with a polymer as the base polymer. The intrinsic type radiation-curable adhesive does not need to contain an oligomer component or the like which is a low molecular weight component, or has a small content, so that the oligomer component does not migrate in the binder over time, and a stable layer structure can be formed. The second adhesive layer 13 is therefore preferred.

The base polymer having a carbon-carbon double bond can be a base polymer having a carbon-carbon double bond and having adhesiveness without particular limitation. As such a base polymer, a base polymer having an acrylic polymer as a basic skeleton is preferable. The basic skeleton of the acrylic polymer may, for example, be the above-exemplified (meth)acrylic polymer.

The method of introducing the carbon-carbon double bond in the acrylic polymer is not particularly limited, and various methods can be employed, and it is easy to introduce a carbon-carbon double bond in the polymer side chain from the viewpoint of molecular design. For example, when a monomer having a functional group is copolymerized with an acrylic polymer in advance, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is maintained in the ultraviolet curable property of maintaining a carbon-carbon double bond. The obtained copolymer is subjected to a condensation or addition reaction.

Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferred from the viewpoint of easily tracking the reaction. Further, if a combination of the (meth)acrylic polymer having a carbon-carbon double bond is produced by a combination of these functional groups, the functional group may be on any one of the acrylic polymer and the compound, In the case of a preferred combination, it is preferred that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methacryl oxirane ethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. . Further, as the acrylic polymer, an ether such as the above-exemplified hydroxyl group-containing monomer or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. A (meth)acrylic polymer obtained by copolymerization of a compound or the like.

The intrinsic type ultraviolet curable adhesive may be a base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be blended with the ultraviolet curable property within a range not impairing properties. Monomer component or oligomer component. The ultraviolet curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 parts by weight to 10 parts by weight, per 100 parts by weight of the base polymer.

When curing by ultraviolet rays or the like, the ultraviolet curable pressure-sensitive adhesive contains a photopolymerization initiator. The photopolymerization initiator may, for example, be 4-(2-hydroxyethoxy)phenyl-(2-hydroxy-2-propyl)one or α-hydroxy-α,α'-dimethylacetophenone. , α-keto alcohol compounds such as 2-methyl-2-hydroxypropiophenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2'-dimethoxy-2-phenylbenzene Ethyl ketone, 2,2'-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)phenyl]-2-(N-morpholinyl)propan-1-one, etc. Acetophenone compounds; benzoin ethyl ether, benzoin isopropyl ether, fenthene methyl ether and other benzoin ether compounds; biphenyl dimethyl ketal and other ketal compounds; 2-naphthoquinone An aromatic sulfonium chloride compound such as chlorine; a photoactive quinone compound such as 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl) hydrazine; benzophenone or benzamidine a benzophenone compound such as benzoic acid or 3,3'-dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone and the like Tons of ketones; camphorquinone; halogenated ketone; Phosphine; fluorenylphosphonate. The blending amount of the photopolymerization initiator is, for example, about 0.05 part by weight to about 20 parts by weight based on 100 parts by weight of the base polymer such as a (meth)acrylic polymer constituting the binder.

In addition, examples of the ultraviolet-curable pressure-sensitive adhesive include an addition-polymerizable compound having two or more unsaturated bonds and an alkoxydecane having an epoxy group, which is disclosed in JP-A-60-196956. An acrylic binder such as a photopolymerization initiator such as a photopolymerizable compound and a carbonyl compound, an organic sulfur compound, a peroxide, an amine or an onium salt compound. Further, in the case where the radiation is irradiated, it is preferable to isolate oxygen (air) from the surface of the radiation-curable second pressure-sensitive adhesive layer 13 in the case where oxygen causes hindered solidification. The method may, for example, be a method of covering the surface of the second pressure-sensitive adhesive layer 13 with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere.

The thickness of the second pressure-sensitive adhesive layer 13 is not particularly limited, and is preferably from about 10 μm to about 100 μm, more preferably from 15 μm to 80 μm, further preferably from 20 μm, from the viewpoint of preventing chip cut surface notch or fixing of the adhesive layer 14 and reducing chipping. ~50μm. In addition, the second adhesive layer 13 may be a single layer or a plurality of layers.

The shear storage modulus of the second adhesive layer 13 is preferably 5 × 10 ⁴ Pa to 1 × 10 ¹⁰ Pa at 23 ° C and 150 ° C, more preferably 1 × 10 ⁵ Pa to 1 × 10 ⁸ Pa. When the shear storage modulus is less than 5 × 10 ⁴ Pa, peeling of the second pressure-sensitive adhesive layer 13 from the adhesive layer 14 may become difficult. On the other hand, when the shear storage modulus exceeds 1 × 10 ¹⁰ Pa, the adhesion between the second pressure-sensitive adhesive layer 13 and the pressure-sensitive adhesive layer 14 may be lowered. The shear storage modulus of the second adhesive layer 13 is a value obtained by the following method. That is, first, the pressure-sensitive adhesive layer was formed into a cylindrical shape having a thickness of about 1.5 mm and a diameter of 7.9 mm. Then, using the ARES viscoelasticity measuring apparatus manufactured by Rheometric Scientific Co., Ltd. as a dynamic viscoelasticity measuring device, the second adhesive layer 13 was attached to the parallel plate jig, and strain was applied in a shear mode by 0.1% (23 ° C), 0.3%. (150 ° C), shear strain at a frequency of 1 Hz, while changing the temperature at a temperature increase rate of 5 ° C / min in the temperature range of 23 ° C to 150 ° C. The shear storage modulus at 23 ° C and 150 ° C can be obtained by measuring the elastic modulus at this time. Further, in the case where the second pressure-sensitive adhesive layer 13 is of a radiation curing type, the value of the shear storage modulus is a value after radiation curing. In addition, the shear storage modulus can be appropriately adjusted, for example, by adding an external crosslinking agent.

The surface free energy of the bonding surface of the second pressure-sensitive adhesive layer 13 and the pressure-sensitive adhesive layer 14 is preferably 30 mJ/m ² or less, more preferably 1 mJ/m ² to 30 mJ/m ² , still more preferably 15 mJ/m ² to 30 mJ/m ² , It is particularly preferably 20 mJ/m ² to 28 mJ/m ² . When the surface free energy exceeds 30 mJ/m ² , the adhesiveness of the second pressure-sensitive adhesive layer 13 to the adhesive layer 14 is excessively large, and the pick-up property may be lowered. Further, the surface free energy of the bonding surface of the second pressure-sensitive adhesive layer precursor and the pressure-sensitive adhesive layer 14 is preferably 30 mJ/m ² or less, more preferably 1 mJ/m ² to 30 mJ/m ² , still more preferably 15 mJ/m ² to 30 mJ/ m ^{2 is} particularly preferably 20 mJ/m ² to 28 mJ/m ² . When the surface free energy exceeds 30 mJ/m ² , the adhesiveness of the second pressure-sensitive adhesive layer 13 to the adhesive layer 14 is excessively large, and the pick-up property may be lowered. The surface free energy of the second adhesive layer 13 or the second adhesive layer precursor can be appropriately adjusted, for example, by adding an external crosslinking agent. In addition, the surface free energy can be calculated by the following method. That is, the contact angle (θ(rad)) was measured for each surface of the second pressure-sensitive adhesive layer 13 using water and diiodomethane. Then, the surface free energy value of the liquid was measured using the measured value and the contact angle described in the literature, and the surface free energy (γ _s ) was calculated from the following formula.

γ _s =γ _s ^d +γ _s ^p (1)

γ _L =γ _L ^d +γ _L ^p (2)

(1+cosθ)γ _L =2(γ _s ^d γ _L ^d ) ^1/2 +2(γ _s ^p γ _L ^p ) ^1/2 (3)

Here, each symbol in the formulas (1) to (3) has the following meanings.

θ: contact angle (rad) determined from water or droplets of diiodomethane

γ _s : surface free energy of the second adhesive layer 13 (mJ/m ² )

γ _s ^d : a dispersed component (mJ/m ² ) in the surface free energy of the second adhesive layer 13

γ _s ^p : polar component (mJ/m ² ) in the surface free energy of the second adhesive layer 13

γ _L : surface free energy of water or diiodomethane (mJ/m ² )

γ _L ^d : dispersion component in the surface free energy of water or diiodomethane (mJ/m ² )

γ _L ^p : polar component in the surface free energy of water or diiodomethane (mJ/m ² )

Further, the values of the surface free energy described in the literature are as follows.

Water: dispersed component (γ _L ^d ) 21.8 mJ/m ² , polar component (γ _L ^p ) 51.0 mJ/m ²

Diiodomethane: dispersed component (γ _L ^d ) 49.5 mJ/m ² , polar component (γ _L ^p ) 1.3 mJ/m ²

Further, the measurement of the contact angle between the second pressure-sensitive adhesive layer 13 and the water and methylene iodide on the surface of the adhesive layer 14 was measured by the following values. That is, according to JIS Z8703, about 1 μL of water (distilled water) or droplets of diiodomethane are dropped onto the surface of the second pressure-sensitive adhesive layer 13 in an environment of a temperature of 23 ± 2 ° C and a relative humidity of 50 ± 5% Rh. . Then, the contact angle was measured by a 3-point method (using an average value) after 30 seconds of dropping using a surface contact angle meter "CA-X" (manufactured by FACE Co., Ltd.).

Further, the second adhesive layer 13 may contain various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, or the like) within a range not impairing the effects of the present invention. Anti-aging agents, antioxidants, surfactants, cross-linking agents, etc.).

The structure in which the base material layer 11, the first pressure-sensitive adhesive layer 12, and the second pressure-sensitive adhesive layer 13 are stacked, the bending rigidity S calculated by E × I is preferably 5.0 × 10 ⁴ to 7.0 × 10 ⁵ In the range (where I is the second moment of the section indicated by b×T ³ /12, b is the width of the test piece of the structure of 10 (mm), and T is the thickness (mm) of the structure, E It is the tensile storage elastic modulus (Pa) at 25 ° C of the structure. The bending rigidity S is more preferably in the range of 6.0 × 10 ⁴ to 6.0 × 10 ⁵ , still more preferably in the range of 7.0 × 10 ⁴ to 5.0 × 10 ⁵ . By setting the bending rigidity S to 5.0 × 10 ⁴ or more, the rigidity of the structure can be maintained, and when the wafer is pasted, the bonding can be performed without wrinkles. On the other hand, by setting the bending rigidity S to 7.0 × 10 ⁵ or less, the structure is appropriately bent at the time of picking up, and stable pickup can be realized. Here, the tensile elastic modulus (Pa) at 25 ° C of the structure is a value obtained by measuring the temperature at 5 ° C /min using a dynamic viscoelasticity measuring apparatus (RSA-III, manufactured by Rheometrics Scientific Co., Ltd.).

[Adhesive layer]

The adhesive layer 14 is provided on the second adhesive layer 13, and is a layer having an adhesive function to a semiconductor wafer or the like. As shown in FIG. 2, in the case where the circular second adhesive layer 13 is provided on the inner side of the cut ring pasting portion 18 on the first adhesive layer 12, it is preferable that the planar shape of the adhesive layer 14 is also circular. Further, it is disposed at a position substantially concentric with respect to the center of the second adhesive layer 13. Further, it is preferable that the planar shape of the adhesive layer 14 is larger than that of the second adhesive layer 13, and is provided so as to cover the entire second adhesive layer 13. Thereby, the peripheral portion 14a (the hatched portion region in FIG. 2) of the adhesive layer 14 can be laminated on the first adhesive layer 12. In the case of such a laminated structure, the peripheral portion of the adhesive layer 14 is obtained not to be adhered to the second adhesive layer 13 which is easily peeled off but to be firmly adhered to the first adhesive layer 12. As a result, for example, the adhesive layer 14 can be prevented from being peeled off from the second adhesive layer 13 at the time of cutting to cause curling.

The constituent material of the adhesive layer 14 is a material in which a thermoplastic resin and a thermosetting resin are used in combination. Further, a thermoplastic resin or a thermosetting resin can also be used alone. Further, the laminated structure of the adhesive layer 14 is not particularly limited, and examples thereof include a structure composed of only a single layer, or a structure having a multilayer structure in which an adhesive layer is formed on one surface or both surfaces of a core material. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), A resin substrate reinforced by a glass fiber or a non-woven fabric made of plastic, a ruthenium substrate, a glass substrate, or the like.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutadiene. Resin, polycarbonate resin, thermoplastic polyimide resin, nylon 6 or nylon 6,6, etc. Polyamide resin, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, polyamidoxime An amine resin or a fluorine-containing resin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin having less ionic impurities, high heat resistance, and reliability of a semiconductor element can be particularly preferable.

The acrylic resin may, for example, be one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Polymers, etc. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, a t-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a cyclohexyl group. 2-ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octaalkyl or dodecyl and the like.

Further, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or croton. a carboxyl group-containing monomer such as an acid; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, or (meth)acrylic acid-4 -hydroxybutyl ester, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxyl (meth)acrylate a hydroxyl group-containing monomer such as lauryl ester or (4-hydroxymethylcyclohexyl)methyl acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, a sulfonic acid group-containing monomer such as (meth)acrylonitrile-propanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalenesulfonic acid; or 2-hydroxyethyl phthalate Such as a phosphate-containing monomer. These may be used singly or in combination of two or more.

Further, as the acrylic resin, an acrylic copolymer is preferred. The monomer component used in the acrylic copolymer is not particularly limited, and examples thereof include butyl acrylate and ethyl acrylate. In the present invention, a copolymer composed of butyl acrylate in the range of 10% by weight to 60% by weight and ethyl acrylate in the range of 40% by weight to 90% by weight based on all the monomer components is preferably used.

Further, the other monomer component copolymerizable with the monomer component is not particularly limited, and examples thereof include acrylonitrile. The amount of these copolymerizable monomer components used is preferably in the range of 1% by weight to 20% by weight based on the total of the monomer components. Cohesive force, adhesiveness, and the like can be changed by including other monomer components within the range of values.

The polymerization method of the acrylic copolymer is not particularly limited, and conventionally known methods such as a solution polymerization method, a bulk polymerization method, a suspension polymerization method, and an emulsion polymerization method can be employed.

The glass transition temperature (Tg) of the acrylic copolymer is preferably from -30 ° C to 10 ° C, more preferably from -25 ° C to 8 ° C. By setting the glass transition temperature to -30 ° C or higher, the storage elastic modulus of the adhesive layer 14 at a high temperature (for example, 100 ° C to 200 ° C) can be ensured. On the other hand, by setting it as 10 ° C or less, it can exhibit favorable adhesiveness and adhesiveness with respect to a semiconductor wafer.

The weight average molecular weight of the acrylic copolymer is preferably 100,000 or more, more preferably 600,000 to 1,200,000, and particularly preferably 700,000 to 1,000,000. By setting the weight average molecular weight to 100,000 or more, the adhesion of the adherend such as a wiring board or the semiconductor element or the surface of the semiconductor wafer at a high temperature is excellent, and heat resistance can be improved. Further, by setting the weight average molecular weight to 1.2 million or less, it can be easily dissolved in an organic solvent. The weight average molecular weight is a polystyrene equivalent value by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a urethane resin, a silicone resin, or a thermosetting polyimide resin. These resins may be used singly or in combination of two or more. In particular, an epoxy resin having a small content of ionic impurities that etch the semiconductor element is preferable. Further, as the curing agent for the epoxy resin, a phenol resin is preferred.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, and for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenation can be used. Bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrahydroxyphenylethane type, etc. An oxy resin or a polyfunctional epoxy resin, or a carbendazole type, an isocyanuric acid triglycidyl ester type or a glycidylamine type epoxy resin. These may be used singly or in combination of two or more. Among these epoxy resins, a novolac type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin or a tetrahydroxyphenylethane type epoxy resin is particularly preferable. This is because these epoxy resins have high reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like. Further, the content of ionic impurities or the like which etch the semiconductor element in the epoxy resin is small.

Further, the phenol resin acts as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolac phenol resin, a t-butyl phenol novolak resin, and a mercapto group. A novolac type phenol resin such as a phenol novolak resin, a resol type phenol resin, or a polyhydroxy styrene such as polyparaxyl styrene. These may be used singly or in combination of two or more. Among these phenol resins, a biphenyl type phenol novolak resin or a phenol aralkyl resin represented by the following chemical formula is preferable. This is because the connection reliability of the semiconductor device can be improved.

(The n is a natural number from 0 to 10).

Further, the n is preferably a natural number of 0 to 10, and more preferably a natural number of 0 to 5. By being within the stated range, the fluidity of the adhesive layer 14 can be ensured.

The mixing ratio of the epoxy resin to the phenol resin is preferably, for example, such that the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. . Further, it is more preferably 0.8 equivalents to 1.2 equivalents. That is, this is because when the mixing ratio of the two is outside the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are liable to deteriorate.

Further, in the present invention, an adhesive layer of an epoxy resin, a phenol resin, and an acrylic resin is particularly preferably used. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. In the mixing ratio at this time, the amount of the epoxy resin and the phenol resin is from 10 parts by weight to 200 parts by weight based on 100 parts by weight of the acrylic resin component.

When the adhesive layer 14 of the present invention is crosslinked to some extent in advance, a polyfunctional compound which reacts with a functional group at the end of the molecular chain of the polymer or the like may be added as a crosslinking agent at the time of production. Thereby, the adhesive property at a high temperature can be improved and the heat resistance can be improved.

As the crosslinking agent, a polyisocyanate compound such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, or an adduct of a polyhydric alcohol and a diisocyanate is more preferable. The amount of the crosslinking agent to be added is usually preferably 0.05 parts by weight to 7 parts by weight based on 100 parts by weight of the polymer. When the amount of the crosslinking agent exceeds 7 parts by weight, the adhesive strength is lowered, which is not preferable. On the other hand, when it is less than 0.05 part by weight, the cohesive force is insufficient, which is not preferable. Further, other polyfunctional compounds such as an epoxy resin may be contained together with such a polyisocyanate compound as needed.

Further, an inorganic filler may be appropriately blended in the adhesive layer 14. The blending of the inorganic filler imparts irregularities to the surface of the adhesive layer 14. Further, it is also possible to impart conductivity, improve thermal conductivity, adjust storage elastic modulus, and the like.

Examples of the inorganic filler include ceramics such as ceria, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, cerium nitride, aluminum, copper, silver, gold, and the like. Metals such as nickel, chromium, lead, tin, zinc, palladium, and solder, or various inorganic powders such as alloys and carbon. These may be used singly or in combination of two or more. Among them, cerium oxide is preferably used, and molten cerium oxide is particularly preferably used.

The average particle diameter of the inorganic filler is preferably in the range of 0.1 μm to 5 μm, and more preferably in the range of 0.2 μm to 3 μm. When the average particle diameter of the inorganic filler is less than 0.1 μm, it is difficult to set Ra of the pressure-sensitive adhesive layer to 0.15 μm or more. On the other hand, when the average particle diameter exceeds 5 μm, it is difficult to make Ra less than 1 μm. Further, in the present invention, an inorganic filler having different average particle diameters may be used in combination. Further, the average particle diameter is a value obtained by, for example, a photometric particle size distribution meter (manufactured by HORIBA, device name LA-910).

The amount of the inorganic filler to be added is preferably 20 parts by weight to 80 parts by weight based on 100 parts by weight of the organic resin component. It is particularly preferably 20 parts by weight to 70 parts by weight. When the amount of the inorganic filler is less than 20 parts by weight, the heat resistance is lowered. Therefore, when subjected to a heat history for a long period of time, the adhesive layer 14 may be solidified, and the fluidity or the burying property may be lowered. Further, when it exceeds 80 parts by weight, the storage elastic modulus of the adhesive layer 14 is increased. Therefore, sometimes the cured adhesive is difficult to alleviate the stress, and the burying property of the unevenness in the sealing process is lowered.

Further, in the adhesive layer 14, in addition to the inorganic filler, other additives may be appropriately blended as needed. Examples of other additives include a flame retardant, a decane coupling agent, an ion trapping agent, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These flame retardants may be used singly or in combination of two or more. As the decane coupling agent, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, γ-epoxypropyl Oxypropylmethyldiethoxydecane, and the like. These compounds may be used singly or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and barium hydroxide. These ion trapping agents may be used singly or in combination of two or more.

The adhesive layer 14 can also be colored as needed. In the adhesive layer 14, the color which is exhibited by coloring is not particularly limited, and is preferably, for example, black, blue, red, green, or the like. When the adhesive layer 14 is used as a wafer bonding film, it is usually not colored (but may be colored), and is usually colored when used as a film for a flip-chip type semiconductor back surface. In the case of coloring, it can be suitably selected from known coloring agents such as pigments and dyes.

The thickness of the adhesive layer 14 (the total thickness in the case of the laminate) is not particularly limited, and is, for example, about 5 μm to about 100 μm, preferably about 5 μm to about 50 μm.

Further, the adhesive layer of the present invention can be used as a wafer bonding film or a film for a flip chip type semiconductor back surface. Here, the film for flip chip type semiconductor back surface is a film for protecting the back surface (exposed back surface) of the semiconductor wafer when the semiconductor wafer is mounted on the substrate by flip chip bonding.

[Peel force between layers]

The peeling strength X between the second adhesive layer 13 and the adhesive layer 14 is preferably in the range of 0.01 N/20 mm to 0.2 N/20 mm, more preferably in the range of 0.015 N/20 mm to 0.18 N/20 mm. By setting the peeling strength X to 0.01 N/20 mm or more, for example, at the time of dicing of a semiconductor wafer, peeling between the two can be prevented, and scattering of the wafer in which the semiconductor wafer is generated can be prevented. On the other hand, by setting the peeling strength X to 0.2 N/20 mm or less, even if the irradiation process of the radiation is omitted, the semiconductor wafer can be picked up favorably.

Further, the peeling strength Y between the first adhesive layer 12 and the second adhesive layer 13 is preferably in the range of 0.2 N/20 mm to 10 N/20 mm, more preferably 0.3 N/20 mm to 9.5 N/20 mm. In the range. By setting the peel strength Y to 0.2 N/20 mm or more, for example, at the time of dicing, the semiconductor wafer or the semiconductor wafer can be reliably fixed. Further, by setting the peeling strength Y to 10 N/20 mm or less, the second adhesive layer 13 can be peeled off from the first adhesive layer 12, and it can be realized as the base material layer 11 and the first adhesive. Recycling of a laminated film of a carrier tape composed of layers.

The ratio (Y/X) of the peeling strength X between the second adhesive layer 13 and the adhesive layer 14 to the peel strength Y between the first adhesive layer 12 and the second adhesive layer 13 is preferably In the range of 3 to 500, more preferably in the range of 4 to 400. By setting the ratio (Y/X) of the peeling strength X to the peeling strength Y to 3 or more, the peeling interface at the time of picking up the semiconductor wafer can be made the boundary between the second adhesive layer 13 and the adhesive layer 14. On the other hand, by setting the ratio (Y/X) to 500 or less, it is possible to suppress wafer scattering at the time of dicing or curling of the adhesive layer, and stable cutting can be performed.

The peel strength between the first adhesive layer 12 and the SUS304-BA plate is preferably in the range of 0.2 N/20 mm to 11 N/20 mm, more preferably in the range of 0.3 N/20 mm to 9.5 N/20 mm. By setting the peeling strength to 0.2 N/20 mm or more, the cutting ring can be reliably adhered and fixed, and the cutting can be performed favorably. On the other hand, by setting the peeling strength to 11 N/20 mm or less, when the dicing ring after use is peeled off from the first pressure-sensitive adhesive layer 12, generation of adhesive residue on the dicing ring can be suppressed.

[bead]

The spacer 15 has a function as a protective material for protecting the adhesive layer 14 before being supplied to an actual application. Here, as shown in FIG. 2, in the case where the second adhesive layer 13 and the adhesive layer 14 are provided inside the bonding portion 18 of the dicing ring, the spacer 15 also protects the first adhesive layer 12. Further, the separator 15 can be used as a substrate when the adhesive layer 14 is transferred to the second pressure-sensitive adhesive layer 13. The spacer 15 is peeled off when the semiconductor wafer is pasted onto the adhesive layer 14. The separator 15 may be surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-containing release agent, or a long-chain alkyl acrylate release agent. Plastic film or paper.

(Method of Manufacturing Thin Film for Semiconductor Device Manufacturing)

Hereinafter, a method for producing a thin film for semiconductor device production of the present invention will be described by taking a thin film 1 for semiconductor device manufacturing as an example. First, the substrate layer 11 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, a blow molding method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. Wait.

Then, a first adhesive layer 12 is formed on the substrate layer 11. That is, after the pressure-sensitive adhesive composition is applied onto the base material layer 11 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinking if necessary) to form the first pressure-sensitive adhesive layer 12. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be variously set depending on the thickness of the coating film, the material, and the like. Specifically, for example, it can be carried out under the conditions of a drying temperature of 80 ° C to 150 ° C and a drying time of 0.5 minutes to 5 minutes. Alternatively, the first pressure-sensitive adhesive layer 12 may be formed by applying a pressure-sensitive adhesive composition to a separator to form a coating film, and then drying the coating film under the drying conditions. Thereafter, the first adhesive layer 12 is transferred onto the substrate layer 11.

Then, a second adhesive layer 13 is formed on the first adhesive layer 12. That is, after the radiation-curable pressure-sensitive adhesive composition is applied onto the separator to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinking if necessary) to form a second pressure-sensitive adhesive layer precursor. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be variously set depending on the thickness of the coating film, the material, and the like. Specifically, for example, it can be carried out under the conditions of a drying temperature of 80 ° C to 150 ° C and a drying time of 0.5 minutes to 5 minutes. Alternatively, the coating composition may be formed by applying a pressure-sensitive adhesive composition to the separator, and then drying the coating film under the drying conditions to form a second pressure-sensitive adhesive layer precursor.

The second adhesive layer precursor thus formed is irradiated with radiation, thereby forming the second adhesive layer 13. In the case where ultraviolet rays are used as the radiation, the irradiation conditions are preferably such that the cumulative amount of light is in the range of 50 mJ/cm ² to 1000 mJ/cm ² , and more preferably in the range of 100 mJ/cm ² to 800 mJ/cm ² . When the irradiation of ultraviolet rays is less than 50 mJ/cm ² , the curing of the second pressure-sensitive adhesive layer 13 may be insufficient. As a result, the adhesion to the adhesive layer 14 is increased, resulting in a decrease in pick-up property. In addition, a paste residue is generated on the adhesive layer 14 after picking up. On the other hand, when the irradiation of ultraviolet rays exceeds 1000 mJ/cm ² , the curing of the second pressure-sensitive adhesive layer 13 is excessively performed, and the tensile modulus of elasticity is excessively increased to cause a decrease in expandability. Further, the adhesive strength is excessively lowered, whereby wafer scatter occurs sometimes during dicing of the semiconductor wafer.

Thereafter, the second adhesive layer 13 cured by the irradiation of the radiation is transferred onto the first adhesive layer 12. Further, in the present embodiment, after the second pressure-sensitive adhesive layer precursor is transferred onto the first pressure-sensitive adhesive layer 12, the first pressure-sensitive adhesive layer precursor may be irradiated with radiation to form a second viscosity. Mixture layer 13. As the irradiation condition at this time, in the case where ultraviolet rays are used as the radiation, it is preferable that the cumulative amount of light is in the range of 50 mJ/cm ² to 1000 mJ/cm ² , and more preferably in the range of 100 mJ/cm ² to 800 mJ/cm ² . Inside. When the irradiation of ultraviolet rays is less than 50 mJ/cm ² , the curing of the second pressure-sensitive adhesive layer 13 may be insufficient. As a result, the adhesion to the adhesive layer 14 is increased, resulting in a decrease in pick-up property. In addition, a paste residue is generated on the adhesive layer 14 after picking up. On the other hand, when the irradiation of ultraviolet rays exceeds 1000 mJ/cm ² , the curing of the second pressure-sensitive adhesive layer 13 is excessively performed, whereby the tensile modulus of elasticity is excessively increased and the expandability is lowered. Further, the adhesive strength is excessively lowered, whereby wafer scatter occurs sometimes during dicing of the semiconductor wafer.

Next, an adhesive layer 14 is formed on the second adhesive layer 13. That is, the adhesive composition for forming the adhesive layer 14 is applied onto a release paper to a predetermined thickness, and then dried under predetermined conditions to form the adhesive layer 14. By transferring the adhesive layer 14 onto the second pressure-sensitive adhesive layer 13, the film 1 for semiconductor device manufacturing of the present embodiment can be formed. Alternatively, the transfer of the adhesive layer 14 may be performed on the second adhesive layer precursor. At this time, the second adhesive layer precursor is irradiated with radiation after the adhesive layer 14 is transferred, thereby forming the second adhesive layer 13. The irradiation condition of the radiation at this time may be based on the case where the second adhesive layer precursor is transferred onto the first adhesive layer 12.

(Method of Manufacturing Semiconductor Device)

Next, a method of manufacturing a semiconductor device using the thin film 1 for semiconductor device manufacturing will be described with reference to FIG. 3 is a schematic cross-sectional view showing a state in which a semiconductor wafer attached to an adhesive layer of a film for manufacturing a semiconductor device is cut.

First, as shown in FIG. 3(a), the semiconductor wafer 21 is pressure-bonded to the adhesive layer 14 in the thin film 1 for semiconductor device manufacturing, and is adhered and fixed (mounting process). This process is carried out while being extruded by a pressing means such as a pressure roller. The bonding conditions are not particularly limited, and can be usually carried out at a bonding temperature of 25 ° C to 80 ° C, a bonding speed of 1 mm / sec to 100 mm / sec, and a bonding pressure of 0.05 MPa to 1 MPa.

Then, as shown in FIG. 3(b), the dicing of the semiconductor wafer 21 is performed. Thereby, the semiconductor wafer 21 is diced into a predetermined size and diced to form the semiconductor wafer 22. The cutting is performed from the circuit surface side of the semiconductor wafer 21, for example, in accordance with a conventional method. On the pasting portion 18 of the cutting ring on the first adhesive layer 12, a cutting ring 23 is provided. Further, in the present process, the cutting of the cutting blade 24 is performed to a part of the second adhesive layer 13, and the first adhesive layer 12 is not reached. Since the second pressure-sensitive adhesive layer 13 is irradiated with radiation in advance, even if it is cut by cutting, it is possible to reduce the exposure (burr) of the adhesive which causes the adhesive on the cut surface. As a result, it is possible to prevent reattachment (adhesion) between the cut faces, so that the picking described later can be performed more satisfactorily. Further, since the base material layer 11 and the first pressure-sensitive adhesive layer 12 are not cut, it is possible to prevent the filament-like chips generated by the cutting of the base material layer 11 from adhering to the side surface of the semiconductor wafer 22 in the form of burrs or whiskers, and the like. To achieve low pollution. In addition, burrs or the like due to the cutting of the first adhesive layer 12 can also be prevented. The cutting device used in the present process is not particularly limited, and a conventionally known cutting device can be used. Further, since the semiconductor wafer 21 is adhered and fixed by the adhesive layer 14, it is possible to suppress wafer notch or wafer scattering, and it is also possible to suppress breakage of the semiconductor wafer 21.

Then, the expansion of the thin film 1 for semiconductor device manufacturing is performed. The expansion is carried out using a conventionally known expansion device. The expansion device has a ring-shaped (doughnut-shaped) outer ring that can press the film 1 for semiconductor device manufacturing down by a dicing ring, and an inner ring having a smaller diameter than the outer ring and supporting the film 1 for semiconductor device manufacturing.

Next, as shown in FIG. 3(c), in order to peel off the semiconductor wafer 22 adhered and fixed on the thin film 1 for semiconductor device manufacturing, the semiconductor wafer 22 is picked up. The second adhesive layer 13 is previously cured by irradiation of radiation, and thus the pickup is performed without irradiating the radiation. The method of picking up is not particularly limited, and various methods known in the art can be employed. For example, a method in which each semiconductor wafer 22 is pushed up from the side of the thin film 1 for semiconductor device manufacturing by a needle, and the semiconductor wafer 22 pushed up by the pick-up device is picked up. In the film 1 for semiconductor device manufacturing of the present invention, since the second adhesive layer 13 and the adhesive layer 14 have good peelability, for example, even if the number of stitches is reduced or the amount of push-up is reduced, the pick-up can be improved with a higher yield.

The picked semiconductor wafer 22 is adhesively fixed to the adherend by the adhesive layer 14 (wafer bonding). The adherend is placed on a heat block 9. Examples of the adherend include a lead frame, a TAB film, a substrate, or a separately fabricated semiconductor wafer. The adherend may be, for example, a deformed adherend that is easily deformed, or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

As the substrate, a conventionally known substrate can be used. Further, as the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame or an organic substrate containing glass epoxy, BT (bismaleimide-triazine), or polyimine may be used. However, the present invention is not limited to these, and includes a circuit board that can be used after mounting a semiconductor element and electrically connecting the semiconductor element.

When the adhesive layer 14 is a thermosetting type, the semiconductor wafer 22 is adhered and fixed to the adherend by heat curing, and the heat resistance is improved. Further, a material obtained by adhering and fixing the semiconductor wafer 22 to the substrate or the like by the adhesive layer 14 can be supplied to a reflow soldering process. Thereafter, wire bonding is performed to electrically connect the tip end of the terminal portion (internal lead) of the substrate to the electrode pad on the semiconductor wafer 22 by a bonding wire, and the semiconductor wafer is sealed with a sealing resin, and the sealing resin is post-cured. Thus, the semiconductor device of the present embodiment is produced.

Example

Hereinafter, preferred embodiments of the present invention will be described in detail. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the invention, unless otherwise specified.

(Example 1)

<Production of Second Adhesive Layer>

In a reaction vessel having a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 2-ethylhexyl acrylate (2EHA) was added: 80 parts by weight, 2-hydroxyethyl acrylate (HEA): 20 parts by weight, and Toluene: 65 parts by weight, and polymerization treatment was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer X.

In the acrylic polymer X: 100 parts by weight, 2-methylpropenyloxyethyl isocyanate (MOI) was added: 24.1 parts by weight (90 mol% (mol%) relative to HEA) in an air stream The addition reaction treatment was carried out at 50 ° C for 48 hours to obtain an acrylic polymer Y.

Then, a polyisocyanate compound (trade name "coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts by weight of the acrylic polymer Y: 3 parts by weight and a photopolymerization initiator (trade name "Irgacure 651", A binder solution was prepared in an amount of 5 parts by weight manufactured by Ciba Specialty Chemicals Co., Ltd.

The binder solution prepared in the above was applied to a polysiloxane-treated surface of a PET film having a thickness of 50 μm, and cross-linked by heating at 80 ° C for 3 minutes to form a radiation-curable second bond having a thickness of 30 μm. After the agent layer precursor is used, an ultraviolet (UV) irradiation device (trade name "UM-810", manufactured by Nitto Seiki Co., Ltd.) is used, and ultraviolet light is irradiated with an accumulated amount of light: 300 mJ/cm ^{2 to} irradiate ultraviolet rays to prepare a second adhesive layer. .

<Production of Adhesive Layer>

50 parts by weight of an epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN501HY), 50 parts by weight of a phenol resin (manufactured by Megumi Kasei Co., Ltd., trade name: MEH7800), and an acrylic copolymer (manufactured by NOGAWA Chemical Co., Ltd.) Trade name: Ravital AR31, weight average molecular weight 700,000, glass transition temperature -15 ° C) 100 parts by weight and spherical cerium oxide as a filler (manufactured by ADMATECHS Co., Ltd., trade name: SO-25R, average particle diameter 0.5 μm) 70 parts by weight was dissolved in methyl ethyl ketone to obtain a solution of the adhesive composition having a concentration of 23.6% by weight.

The adhesive composition solution was applied onto a release-treated film (release liner) composed of a polyethylene terephthalate film having a thickness of 50 μm after the polysiloxane treatment, and then dried at 130 ° C. minute. Thus, an adhesive layer having a thickness of 25 μm was produced.

<Production of Thin Film for Semiconductor Device Manufacturing>

As a carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, a trade name of S-400X manufactured by Nitto Denko Corporation was used. On the first adhesive layer of the carrier tape, a second adhesive layer cut at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive layer having a thickness of 330 mmφ was cut so as to completely cover the second pressure-sensitive adhesive layer, and the film was bonded at 40° C. to produce a film for producing a semiconductor device of the present example.

(Example 2)

In the present embodiment, the carrier tape in which the first pressure-sensitive adhesive layer is laminated on the base material layer is the same as in the first embodiment except that the product name CB-700 manufactured by Nitto Denko Corporation is used. The film for semiconductor device production of this example was produced.

(Example 3)

In the present embodiment, the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer was produced in the same manner as in Example 1 except that the product name M-4001 manufactured by Nitto Denko Corporation was used. A film for manufacturing a semiconductor device of the embodiment.

(Example 4)

In the present embodiment, the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer was produced in the same manner as in Example 1 except that the product name HR-4011 manufactured by Nitto Denko Corporation was used. A film for manufacturing a semiconductor device of the embodiment.

(Example 5)

In the present embodiment, the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer was produced in the same manner as in Example 1 except that the product name V8-S manufactured by Nitto Denko Corporation was used. A film for manufacturing a semiconductor device of the embodiment.

(Example 6)

In the present embodiment, the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer was produced in the same manner as in Example 1 except that the product name UE-1088J manufactured by Nitto Denko Corporation was used. A film for manufacturing a semiconductor device of the embodiment.

(Example 7)

In the present embodiment, the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer was produced in the same manner as in Example 1 except that the product name UB-2130E manufactured by Nitto Denko Corporation was used. A film for manufacturing a semiconductor device of the embodiment.

(Example 8)

<Production of Second Adhesive Layer>

In a reaction vessel having a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 2-ethylhexyl acrylate (2EHA) was added: 80 parts by weight, 2-hydroxyethyl acrylate (HEA): 20 parts by weight, and Toluene: 65 parts by weight, and polymerization treatment was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer X.

In the acrylic polymer X: 100 parts by weight, 2-methylpropenyloxyethyl isocyanate (MOI) was added: 24.1 parts by weight (90 mol% relative to HEA), and carried out in an air stream at 50 ° C The 48-hour addition reaction treatment gave an acrylic polymer Y.

Then, a polyisocyanate compound (trade name "coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts by weight of the acrylic polymer Y: 8 parts by weight and a photopolymerization initiator (trade name "Irgacure 651", A binder solution was prepared in an amount of 5 parts by weight manufactured by Ciba Specialty Chemicals Co., Ltd.

The binder solution prepared in the above was applied to a polysiloxane-treated surface of a PET film having a thickness of 50 μm, and cross-linked by heating at 80 ° C for 3 minutes to form a radiation-curable second bond having a thickness of 30 μm. After the agent layer precursor is used, an ultraviolet (UV) irradiation device (trade name "UM-810", manufactured by Nitto Seiki Co., Ltd.) is used, and ultraviolet light is irradiated with an accumulated amount of light: 300 mJ/cm ^{2 to} irradiate ultraviolet rays to prepare a second adhesive layer. .

<Production of Adhesive Layer>

Regarding the adhesive layer of the present embodiment, the same adhesive layer as in Example 1 was used.

<Production of Thin Film for Semiconductor Device Manufacturing>

As the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, the same carrier tape as in Example 1 was used. On the first adhesive layer of the carrier tape, a second adhesive layer cut at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive layer having a thickness of 330 mmφ was cut so as to completely cover the second pressure-sensitive adhesive layer, and the film was bonded at 40° C. to produce a film for producing a semiconductor device of the present example.

(Example 9)

<Preparation of second adhesive layer precursor>

In a reaction vessel having a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 2-ethylhexyl acrylate (2EHA) was added: 80 parts by weight, 2-hydroxyethyl acrylate (HEA): 20 parts by weight, and Toluene: 65 parts by weight, and polymerization treatment was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer X.

In the acrylic polymer X: 100 parts by weight, 2-methylpropenyloxyethyl isocyanate (MOI) was added: 24.1 parts by weight (90 mol% relative to HEA), and carried out in an air stream at 50 ° C The 48-hour addition reaction treatment gave an acrylic polymer Y.

Then, a polyisocyanate compound (trade name "coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts by weight of the acrylic polymer Y: 5 parts by weight and a photopolymerization initiator (trade name "Irgacure 651", A binder solution was prepared in an amount of 5 parts by weight manufactured by Ciba Specialty Chemicals Co., Ltd.

The binder solution prepared in the above was applied to a polysiloxane-treated surface of a PET film having a thickness of 50 μm, and cross-linked by heating at 80 ° C for 3 minutes to form a radiation-curable second bond having a thickness of 30 μm. Agent layer precursor.

<Production of Adhesive Layer>

Regarding the adhesive layer of the present embodiment, the same adhesive layer as in Example 1 was used.

<Production of Thin Film for Semiconductor Device Manufacturing>

As the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, the same carrier tape as in Example 1 was used. On the first adhesive layer of the carrier tape, a second adhesive layer precursor cut out at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive was applied at 40 ° C in such a manner that the adhesive layer cut out of 330 mm Φ completely covered the second adhesive layer precursor. Then, using an ultraviolet (UV) irradiation device (trade name "UM-810", manufactured by Nitto Seiki Co., Ltd.), the cumulative amount of light is irradiated with ultraviolet rays from the side of the substrate layer: 300 mJ/cm ² for the second adhesive layer precursor The ultraviolet rays are irradiated to form a second adhesive layer. Thus, a film for semiconductor device production of the present example was produced.

(Embodiment 10)

<Production of Second Adhesive Layer>

Regarding the second pressure-sensitive adhesive layer of the present embodiment, the same second pressure-sensitive adhesive layer as in Example 1 was used.

<Production of Adhesive Layer>

200 parts by weight of an epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN501HY), 200 parts by weight of a phenol resin (manufactured by Megumi Kasei Co., Ltd., trade name: MEH7800), and an acrylic copolymer (manufactured by NOGAWA Chemical Co., Ltd.) Trade name: Ravital AR31, weight average molecular weight 700,000, glass transition temperature -15 ° C) 100 parts by weight and spherical cerium oxide as a filler (manufactured by ADMATECHS Co., Ltd., trade name: SO-25R, average particle diameter 0.5 μm) 200 parts by weight was dissolved in methyl ethyl ketone to obtain a solution of the adhesive composition having a concentration of 23.6% by weight.

The adhesive composition solution was applied onto a release-treated film (release liner) composed of a polyethylene terephthalate film having a thickness of 50 μm after the polysiloxane treatment, and then dried at 130 ° C. minute. Thus, an adhesive layer having a thickness of 25 μm was produced.

<Production of Thin Film for Semiconductor Device Manufacturing>

As the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, the same carrier tape as in Example 1 was used. On the first adhesive layer of the carrier tape, a second adhesive layer cut at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive layer having a thickness of 330 mmφ was cut so as to completely cover the second pressure-sensitive adhesive layer, and the film was bonded at 40° C. to produce a film for producing a semiconductor device of the present example.

(Example 11)

<Production of Second Adhesive Layer>

Regarding the second pressure-sensitive adhesive layer of the present embodiment, the same second pressure-sensitive adhesive layer as in Example 8 was used.

<Production of Adhesive Layer>

Regarding the adhesive layer of the present embodiment, the same adhesive layer as in Example 10 was used.

<Production of Thin Film for Semiconductor Device Manufacturing>

As the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, the same carrier tape as in Example 1 was used. On the first adhesive layer of the carrier tape, a second adhesive layer cut at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive layer having a thickness of 330 mmφ was cut so as to completely cover the second pressure-sensitive adhesive layer, and the film was bonded at 40° C. to produce a film for producing a semiconductor device of the present example.

(Embodiment 12)

<Preparation of second adhesive layer precursor>

Regarding the second pressure-sensitive adhesive layer precursor of the present embodiment, the same second pressure-sensitive adhesive layer precursor as in Example 8 was used.

<Production of Adhesive Layer>

Regarding the adhesive layer of the present embodiment, the same adhesive layer as in Example 10 was used.

<Production of Thin Film for Semiconductor Device Manufacturing>

As the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, the same carrier tape as in Example 1 was used. On the first adhesive layer of the carrier tape, a second adhesive layer cut at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive layer having a thickness of 330 mmφ was completely covered to cover the second adhesive layer precursor at 40 ° C, and then an ultraviolet (UV) irradiation device (trade name "UM-810", Nitto Seiki Co., Ltd.) was used. Manufactured, the second adhesive layer precursor was irradiated with ultraviolet light by irradiating ultraviolet light with a cumulative amount of light from the side of the substrate layer: 300 mJ/cm ² to form a second pressure-sensitive adhesive layer. Thus, a film for semiconductor device production of the present example was produced.

(Example 13)

<Preparation of second adhesive layer precursor>

Regarding the second pressure-sensitive adhesive layer precursor of the present embodiment, the same second pressure-sensitive adhesive layer precursor as in Example 9 was used.

<Production of Adhesive Layer>

Regarding the adhesive layer of the present embodiment, the same adhesive layer as in Example 1 was used.

<Production of Thin Film for Semiconductor Device Manufacturing>

As the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, the same carrier tape as in Example 1 was used. On the first adhesive layer of the carrier tape, a second adhesive layer precursor cut out at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive layer having a thickness of 330 mmφ was completely covered to cover the second adhesive layer precursor at 40 ° C, and then an ultraviolet (UV) irradiation device (trade name "UM-810", Nitto Seiki Co., Ltd.) was used. Manufactured, the second adhesive layer precursor was irradiated with ultraviolet light by irradiating ultraviolet light with a cumulative amount of light from the side of the substrate layer: 300 mJ/cm ² to form a second pressure-sensitive adhesive layer. Thus, a film for semiconductor device production of the present example was produced.

(Example 14)

<Preparation of second adhesive layer precursor>

In a reaction vessel having a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 2-ethylhexyl acrylate (2EHA) was added: 80 parts by weight, 2-hydroxyethyl acrylate (HEA): 20 parts by weight, and Toluene: 65 parts by weight, and polymerization treatment was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer X.

In the acrylic polymer X: 100 parts by weight, 2-methylpropenyloxyethyl isocyanate (MOI) was added: 24.1 parts by weight (90 mol% relative to HEA), and carried out in an air stream at 50 ° C The 48-hour addition reaction treatment gave an acrylic polymer Y.

Then, a polyisocyanate compound (trade name "coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts by weight of the acrylic polymer Y: 8 parts by weight and a photopolymerization initiator (trade name "Irgacure 651", A binder solution was prepared in an amount of 5 parts by weight manufactured by Ciba Specialty Chemicals Co., Ltd.

The binder solution prepared in the above was applied to a polysiloxane-treated surface of a PET film having a thickness of 50 μm, and cross-linked by heating at 80 ° C for 3 minutes to form a radiation-curable second bond having a thickness of 30 μm. Agent layer precursor.

<Production of Adhesive Layer>

Regarding the adhesive layer of the present embodiment, the same adhesive layer as in Example 1 was used.

<Production of Thin Film for Semiconductor Device Manufacturing>

As a carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, a trade name of S-400X manufactured by Nitto Denko Corporation was used. On the first adhesive layer of the carrier tape, a second adhesive layer precursor cut out at 315 mmφ was attached at a normal temperature. Thereafter, an ultraviolet (UV) irradiation device (trade name "UM-810", manufactured by Nitto Seiki Co., Ltd.) was used, and the cumulative amount of light was irradiated with ultraviolet rays from the side of the substrate layer: 300 mJ/cm ² to the second adhesive layer precursor. The ultraviolet rays are irradiated to form a second adhesive layer. Thereafter, the adhesive layer having a thickness of 330 mmφ was cut so as to completely cover the second pressure-sensitive adhesive layer, and the film was bonded at 40° C. to produce a film for producing a semiconductor device of the present example.

(Comparative Example 1)

In the comparative example, the same operation as in Example 1 was carried out except that an OPP film (a biaxially oriented polypropylene film, manufactured by FUTAMURA Chemical Co., Ltd., trade name: FBS-6) was used instead of the second pressure-sensitive adhesive layer. A film for semiconductor device production of this comparative example was produced.

(Comparative Example 2)

In this comparative example, a PE film (polyethylene film, manufactured by Oji Paper Co., Ltd., trade name: 40RL-02) treated with polysiloxane was used instead of the second pressure-sensitive adhesive layer, and other methods were implemented. In the same manner as in Example 1, a film for producing a semiconductor device of the comparative example was produced. Further, the adhesive surface adhered to the adhesive layer in the PE film is a surface treated with polyoxymethane.

(Comparative Example 3)

In the comparative example, the thin film for semiconductor device manufacturing of this comparative example was produced in the same manner as in the above except that the film for semiconductor device manufacturing of the first embodiment was not provided with the second pressure-sensitive adhesive layer. In other words, the second pressure-sensitive adhesive layer was not attached to the first pressure-sensitive adhesive layer of the carrier tape, and only an adhesive layer cut at 330 mmφ was adhered at 40° C. to produce a film for semiconductor device production.

(Comparative Example 4)

<Production of Second Adhesive Layer>

In a reaction vessel having a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 2-ethylhexyl acrylate (2EHA) was added: 80 parts by weight, 2-hydroxyethyl acrylate (HEA): 20 parts by weight, and Toluene: 65 parts by weight, and polymerization treatment was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer X.

In the acrylic polymer X: 100 parts by weight, 2-methylpropenyloxyethyl isocyanate (MOI) was added: 24.1 parts by weight (90 mol% relative to HEA), and carried out in an air stream at 50 ° C The 48-hour addition reaction treatment gave an acrylic polymer Y.

Then, a polyisocyanate compound (trade name "coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts by weight of the acrylic polymer Y: 5 parts by weight and a photopolymerization initiator (trade name "Irgacure 651", A binder solution was prepared in an amount of 5 parts by weight manufactured by Ciba Specialty Chemicals Co., Ltd.

The binder solution prepared in the above was applied to a polysiloxane-treated surface of a PET film having a thickness of 50 μm, and cross-linked by heating at 80 ° C for 3 minutes to form a radiation-curable second bond having a thickness of 30 μm. Agent layer.

<Production of Adhesive Layer>

The adhesive layer similar to that of Example 9 was used for the adhesive layer of this comparative example.

<Production of Thin Film for Semiconductor Device Manufacturing>

As the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer, the same carrier tape as in Example 1 was used. On the first adhesive layer of the carrier tape, a second adhesive layer precursor cut out at 315 mmφ was attached at a normal temperature. Thereafter, the adhesive layer having a thickness of 330 mmφ was cut so as to completely cover the second pressure-sensitive adhesive layer, and the film was bonded at 40° C., whereby the film for semiconductor device production of the comparative example was produced.

(Comparative Example 5)

In the present comparative example, the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer was produced in the same manner as in Comparative Example 4 except that the product name GE-300 manufactured by Nitto Denko Corporation was used. A film for semiconductor device production of a comparative example.

(Comparative Example 6)

In the present comparative example, the carrier tape in which the first pressure-sensitive adhesive layer was laminated on the base material layer was produced in the same manner as in Comparative Example 4 except that the product name BT-315S manufactured by Nitto Denko Corporation was used. A film for semiconductor device production of a comparative example.

(peel strength between the second adhesive layer and the adhesive layer)

A sample having a length of 100 mm and a width of 20 mm was cut out from the film for manufacturing a semiconductor device produced in each of Examples and Comparative Examples. Then, a tape (manufactured by Nitto Denko Co., Ltd., trade name: BT-315) was attached to the surface of the adhesive layer at a normal temperature to reinforce the adhesive layer. In addition, the second pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer were clamped, and the peel strength between the two was measured using a tensile tester (manufactured by Shimadzu Corporation, trade name: AGS-J). This was carried out under the peeling conditions of a peeling speed of 300 mm/min, a temperature of 25 ° C, and a relative humidity of 50% Rh.

(peeling force between the first adhesive layer and the second adhesive layer)

The adhesive layer was peeled off from the film for semiconductor device production produced in each of the examples and the comparative examples. Next, a sample having a length of 100 mm and a width of 20 mm was cut out from each of the films for manufacturing a semiconductor device after the adhesive layer was peeled off. Then, a tape (manufactured by Nitto Denko Co., Ltd., trade name: BT-315) was attached to the surface of the second pressure-sensitive adhesive layer at room temperature to enhance the second pressure-sensitive adhesive layer. In addition, the second pressure-sensitive adhesive layer was clamped to the first pressure-sensitive adhesive layer, and the peel strength between the two was measured using a tensile tester (manufactured by Shimadzu Corporation, trade name: AGS-J). This was carried out under the peeling conditions of a peeling speed of 300 mm/min, a temperature of 25 ° C, and a relative humidity of 50% Rh.

(peeling force between the first adhesive layer and SUS)

The adhesive layer and the second pressure-sensitive adhesive layer were peeled off from the film for semiconductor device production produced in each of the examples and the comparative examples. Next, a sample having a length of 100 mm and a width of 20 mm was cut out from each of the films for manufacturing a semiconductor device after the adhesive layer and the second pressure-sensitive adhesive layer were peeled off. Then, a SUS-304BA plate was stuck on the surface of the first adhesive layer using a 2 kg roller. Thereafter, the first pressure-sensitive adhesive layer was clamped to a SUS304-BA plate, and the peel strength between the two was measured using a tensile tester (manufactured by Shimadzu Corporation, trade name: AGS-J). This was carried out under the peeling conditions of a peeling speed of 300 mm/min, a temperature of 25 ° C, and a relative humidity of 50% Rh.

(ring adhesion)

The film for semiconductor device production of each of the examples and the comparative examples was used, and the adhesiveness of the dicing ring was evaluated by the following points.

After the separator was peeled off from the film for semiconductor device production, the dicing ring was pressure-bonded to the first pressure-sensitive adhesive layer at 25 ° C to bond it. In this case, the case where the sticking was performed without wrinkles was evaluated as ○, and the wrinkle was evaluated as ×, and the loop adhesiveness was evaluated. The results are shown in Tables 1 to 3.

(rework)

The film for semiconductor device production of each of the examples and the comparative examples was used, and the reworkability was evaluated by the following points.

After the separator was peeled off from the film for semiconductor device production, the dicing ring was pressure-bonded to the first pressure-sensitive adhesive layer at 25 ° C to bond it. The film for semiconductor device production was peeled off from the ring to which the film for semiconductor device production was bonded, and the case where the first adhesive layer residue (residual residue) was not confirmed on the ring was evaluated as ○, and the residue was confirmed. For X, the reworkability was evaluated. The results are shown in Tables 1 to 3.

(Measurement of glass transition temperature (Tg))

The glass transition temperature of the acrylic copolymer used in each of the examples and the comparative examples was determined by a viscoelasticity measuring apparatus (ARES manufactured by Rheometic Scientific Co., Ltd.) at a temperature increase rate of 10 ° C/min from Tan (G" at a frequency of 1 Hz ( The loss elastic modulus) / G' (storage elastic modulus) was measured.

( wafer stickiness, wafer scattering, wafer contamination, and pick-up)

Using the film for semiconductor device manufacturing of each of the examples and the comparative examples, the wafer sticking property, the wafer scattering, the wafer contamination property, and the pick-up property were evaluated from the back surface grinding process of the semiconductor wafer to the pick-up process by the following points.

A semiconductor wafer (12 inches in diameter and 0.6 mm in thickness) was subjected to back grinding treatment using a mirror wafer having a thickness of 0.05 mm as a workpiece. After the separator was peeled off from the film for semiconductor device production, the mirror wafer roll was pressure-bonded to the adhesive layer at 40 ° C to be pasted. At this time, the case where the wrinkles were not affixed was evaluated as ○, and the case where wrinkles were generated was evaluated as ×, and the wafer adhesiveness was evaluated. The results are shown in Tables 1 to 3. Further, cutting was performed to form 20 semiconductor wafers. In the cutting, full cutting was performed to obtain a wafer size of 10 mm square. Further, in the dicing, the following dicing blade Z1 was used up to half the thickness of the semiconductor wafer. Further, the following cutting blade Z2 was used until the thickness of the second adhesive layer was half. Further, depending on the type of the cutting blades Z1 and Z2, the cutting conditions can be changed as follows. The case where the wafer of the semiconductor wafer was scattered during the dicing was evaluated as ○, and the case where the wafer was not scattered was evaluated as ×, and the wafer scattering was evaluated. The results are shown in Tables 1 to 3.

<Wafer grinding conditions>

Grinding device: manufactured by DISCO, DFG-8560

Semiconductor wafer: 12" diameter (from 0.6mm back thickness to 0.05mm)

< wafer paste condition>

Pasting device: Nitto Seiki Manufacturing, MA-3000II

Paste speed meter: 10mm/min

Pasting pressure: 0.15MPa

Platform temperature when pasting: 40 ° C

<Cutting conditions>

Cutting device: manufactured by DISCO, DFD-6361

Cutting ring: 2-12-1 (manufactured by DISCO)

Cutting speed: 30mm / sec

Cutting blade:

Z1: NBC-ZH2030-SE27HCDD manufactured by DISCO

Cutting blade speed: 40,000 rpm

Blade height: half the thickness of the semiconductor wafer

Z2: NBC-ZH1030-SE27HCBB manufactured by DISCO

Cutting blade speed: 45,000 rpm

Blade height: half the thickness of the second adhesive layer

Cutting method: A mode / step cutting

Wafer chip size: 10.0mm square

Then, the film for semiconductor device manufacturing is pulled, and an expanded process for setting a predetermined interval between the wafers is performed. In addition, the semiconductor wafer was picked up by the push-up from the side of the base material layer of each thin film for semiconductor device manufacturing, and the pick-up property was evaluated. Specifically, 20 semiconductor wafers were continuously picked up, and each semiconductor wafer was observed with a microscope. The pickup conditions are as follows. As a result of the observation, the case where the number of burrs or whiskers attached to the side surface of the semiconductor wafer was 0 was evaluated as ○, when it was 1 to 10, it was evaluated as Δ, and when it was 11 or more, it was evaluated as ×, and the wafer was contaminated. Conduct an evaluation. In addition, the semiconductor wafer was picked up in the range of the pickup height of 0 μm to 600 μm, and the case where all the pickups were evaluated as ○ and the case where the pickup could not be picked up was evaluated as ×, and the pickup property was evaluated. The results are shown in Tables 1 to 3.

<Picking conditions>

Pickup device: SPA-300 (made by Shinkawa Co., Ltd.)

Number of stitches: 5

Needle type: diameter 0.7mm, sharp angle 15°, length 10mm, front end R350μm

Pick up time: 1000 milliseconds

Picking speed: 5mm / sec

Pick height: as mentioned

(Measurement of bending rigidity)

The thickness of the film (cut film) obtained by sequentially bonding the base material layer, the first pressure-sensitive adhesive layer, and the second pressure-sensitive adhesive layer was measured. Thereafter, the film was cut to a width of 10 mm, and the tensile storage elastic modulus was measured at a temperature elevation rate of 5 ° C / minute using a dynamic viscoelasticity measuring device (RSA-III, manufactured by Rheometrics Scientific Co., Ltd.), and the tensile storage at 25 ° C was recorded. The value of the elastic modulus (E [unit Pa]). Further, the bending rigidity calculated by E × I was obtained. Here, I is the second moment of the section indicated by b×T ³ /12, b is the width (mm) of the test piece of the cut film, T is the thickness (mm) of the cut film, and E is 25 ° C of the cut film. The tensile energy storage elastic modulus (Pa). The results are shown in Tables 1 to 3.

(Comprehensive judgment)

In the evaluation results of the ring adhesiveness, the wafer adhesiveness, the wafer contamination, the wafer scattering, the pick-up property, and the reworkability, even if there is one ×, it is evaluated as ×, and when all the evaluation results are ○, it is evaluated as ○. The results are shown in Tables 1 to 3.

(result)

As can be seen from Tables 1 and 2, the films for manufacturing a semiconductor device of Examples 1 to 14 are formed by sequentially providing a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer on a substrate layer. Thereby, it is possible to prevent the wafer of the thin and large-area semiconductor wafer from scattering during the dicing. In addition, burrs or whiskers are not attached to the side surface of the semiconductor wafer, and contamination of the semiconductor wafer can be prevented. Further, at the time of picking up the semiconductor wafer, all of the semiconductor wafers can be picked up satisfactorily, and it is confirmed that the peeling property is also excellent.

On the other hand, when the OPP film was used instead of the second adhesive layer as in the film for semiconductor device manufacturing of Comparative Example 1, since the dicing blade was cut into a part of the OPP film at the time of cutting, it was confirmed that the OPP film was caused. The chips are attached to the side surface of the semiconductor wafer or the like in the form of burrs or whiskers. Further, since the peeling property with the adhesive layer is inferior, pickup defects of the semiconductor wafer are also caused. Further, when a PE film treated with polysiloxane is used in place of the second pressure-sensitive adhesive layer as in the film for semiconductor device production of Comparative Example 2, since the dicing blade is cut into a part of the PE film at the time of cutting, it can be confirmed. The chips resulting from the PE film are attached to the side surface of the semiconductor wafer in the form of burrs or whiskers. Further, when the second pressure-sensitive adhesive layer is not irradiated with ultraviolet rays as in the film for semiconductor device production of Comparative Example 4, the second pressure-sensitive adhesive layer is not cured, and the peeling property with the pressure-sensitive adhesive layer is remarkably reduced to cause pick-up of the semiconductor wafer. bad. In addition, when the bending rigidity is small as in the film for manufacturing a semiconductor device of Comparative Example 5, wrinkles are generated during wafer bonding, which is not preferable. Further, when the bending rigidity is large as in the film for manufacturing a semiconductor device of Comparative Example 6, the film is not bent at the time of picking up, and the peeling starting point of the adhesive layer and the second pressure-sensitive adhesive layer does not occur, which is disadvantageous.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

1. . . Semiconductor device manufacturing film

11. . . Substrate layer

12. . . First adhesive layer

13. . . Second adhesive layer

14. . . Adhesive layer

14a. . . Peripheral part

15. . . bead

18. . . Pasting part of the cutting ring

twenty one. . . Semiconductor wafer

twenty two. . . Semiconductor wafer

twenty three. . . Cutting ring

twenty four. . . Cutting blade

1 is a schematic cross-sectional view showing a film for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view of the semiconductor device manufacturing film viewed from the side of the spacer.

3 is an explanatory view showing a method of manufacturing a semiconductor device using the thin film for manufacturing a semiconductor device, wherein FIG. 3(a) shows a process of attaching a semiconductor wafer to a thin film for manufacturing a semiconductor device, and FIG. 3(b) shows cutting the semiconductor. The process of the wafer, FIG. 3(c) shows the process of picking up the semiconductor wafer.

1. . . Semiconductor device manufacturing film

11. . . Substrate layer

12. . . First adhesive layer

13. . . Second adhesive layer

14. . . Adhesive layer

15. . . bead

Claims (16)

A film for semiconductor manufacturing, used in the manufacture of a semiconductor, comprising: a substrate layer; a first adhesive layer disposed on the substrate layer; and a second adhesive layer disposed on the first paste On the mixture layer, and being a radiation curing type which is previously cured by irradiation with radiation; and an adhesive layer provided on the second adhesive layer. The film for semiconductor manufacturing according to claim 1, wherein the second adhesive layer and the adhesive layer are at least inside the cutting ring pasting portion of the first adhesive layer. Providing that the planar shape of the adhesive layer is larger than the second adhesive layer, and the adhesive layer is disposed to cover the entire second adhesive layer; and the adhesive layer is not located in the first layer A peripheral portion on the second adhesive layer is further disposed on the first adhesive layer. The film for semiconductor device manufacturing according to claim 1, wherein the substrate layer, the first pressure-sensitive adhesive layer, and the second pressure-sensitive adhesive layer are stacked The bending rigidity S calculated by E×I is in the range of 5.0×10 ⁴ to 7.0×10 ⁵ , where I is the second moment of the section represented by b×T ³ /12, and b is the test piece of the structure The width is 10 (mm), T is the thickness (mm) of the structure, and E is the tensile storage elastic modulus (Pa) at 25 ° C of the structure. The film for semiconductor device manufacturing according to claim 1, wherein the peel strength X between the second pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer is in the range of 0.01 N/20 mm to 0.2 N/20 mm. The film for semiconductor device manufacturing according to claim 1, wherein the peel strength Y between the first adhesive layer and the second adhesive layer is in the range of 0.2 N/20 mm to 10 N/20 mm. . The film for semiconductor device manufacturing according to claim 1, wherein a peel strength X between the second adhesive layer and the adhesive layer is different from the first adhesive layer and the second adhesive layer The ratio of the peel strength Y (Y/X) is in the range of 3 to 500. The film for semiconductor device manufacturing according to claim 1, wherein the thickness of the second pressure-sensitive adhesive layer is in the range of 10 μm to 100 μm. The film for semiconductor device manufacturing according to claim 2, wherein the peel strength between the first pressure-sensitive adhesive layer and the SUS304-BA plate is in the range of 0.2 N/20 mm to 11 N/20 mm. The film for semiconductor device manufacturing according to claim 1, wherein the second adhesive layer is formed by curing the precursor of the second adhesive layer by irradiating radiation. An adhesive layer on the adhesive layer. The film for semiconductor device manufacturing according to claim 1, wherein the second adhesive layer is formed by disposing a precursor of the second adhesive layer on the first adhesive layer An adhesive layer formed by curing by irradiation with radiation. The film for semiconductor device manufacturing according to claim 1, wherein the adhesive layer is an adhesive layer formed on a second adhesive layer which is previously cured by irradiation with radiation. The film for semiconductor device manufacturing according to claim 1, wherein the adhesive layer is provided on a precursor of the second adhesive layer before curing by irradiation with radiation. The film for semiconductor device manufacturing according to claim 1, wherein the adhesive layer is formed of at least an epoxy resin, a phenol resin, and an acrylic resin. The film for semiconductor device manufacturing according to claim 13, wherein the acrylic resin has a glass transition temperature in the range of -30 ° C to 10 ° C. The film for semiconductor device manufacturing according to claim 1, wherein the second pressure-sensitive adhesive layer is formed of at least an acrylic polymer. A method of manufacturing a semiconductor device, comprising: manufacturing a semiconductor device using a thin film for manufacturing a semiconductor device according to claim 1, wherein the method of the semiconductor device includes at least the following process: a film for manufacturing the semiconductor device a process of crimping a semiconductor wafer on the adhesive layer; cutting the semiconductor wafer together with the adhesive layer to form a semiconductor wafer, wherein a cut depth of the cut stops at the second adhesive layer; a process of peeling the semiconductor wafer from the second adhesive layer together with the adhesive layer; wherein, from the crimping process of the semiconductor wafer to the peeling process of the semiconductor wafer, the second adhesive is not The layer illuminates the radiation.