JP2015195266A - Die bonding film with dicing sheet, semiconductor device and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a die bonding film with a dicing sheet, which can inhibit the occurrence of chips and cracks and inhibit separation of a dicing sheet and a die bonding film in the case of transportation in a low-temperature state.SOLUTION: In a die bonding film with a dicing sheet where a die bonding film is provided on the dicing sheet, the die bonding film has a loss elastic modulus at 0°C is not less than 20 MPa and not more than 500 MPa.

Description

  The present invention relates to a die bond film with a dicing sheet, a semiconductor device, and a method for manufacturing the semiconductor device.

  Conventionally, in a manufacturing process of a semiconductor device, a die bond film with a dicing sheet in which a die bond film is provided on a dicing sheet may be used (for example, see Patent Document 1).

  The die-bonding film may be cured when placed in a high-temperature and high-humidity environment or stored for a long time under a load. And due to this, a decrease in fluidity, a decrease in holding power with respect to the semiconductor wafer, and a decrease in peelability after dicing are caused. For this reason, the die bond film with a dicing sheet is often transported while being stored in a frozen state at −30 to −10 ° C. or a refrigerated state at −5 to 10 ° C. It is possible.

Japanese Patent Laid-Open No. 05-179211

  However, when transporting in a low temperature state, there is a problem that the die bond film is cracked or chipped. Moreover, there exists a problem that a dicing sheet and a die-bonding film will peel.

  The present invention has been made in view of the above problems, and its purpose is to suppress the occurrence of cracks and chipping when transporting in a low temperature state, and the dicing sheet and the die bond film are peeled off. An object of the present invention is to provide a die-bonding film with a dicing sheet that can suppress the occurrence of the above. Moreover, it is providing the semiconductor device manufactured using the said die-bonding film with a dicing sheet. Moreover, it is providing the manufacturing method of the semiconductor device using the said die-bonding film with a dicing sheet.

  The present inventors have intensively studied to solve the above problems. As a result, by adopting a die bond film with a dicing sheet having the following configuration, it is possible to suppress the occurrence of cracks and chipping in the die bond film when transported at a low temperature, and the dicing sheet and the die bond film are peeled off. It has been found that it is possible to suppress the occurrence of the problem, and the present invention has been completed.

That is, the die bond film with a dicing sheet according to the present invention is a die bond film with a dicing sheet in which the die bond film is provided on the dicing sheet,
The loss elastic modulus at 0 ° C. of the die bond film is 20 MPa or more and 500 MPa or less.

According to the said structure, since the loss elastic modulus in 0 degreeC of a die-bonding film is 500 Mpa or less, it has a certain amount of softness | flexibility in a low-temperature state. Therefore, when transporting in a low temperature state, it can suppress that a crack and a crack generate | occur | produce in a die-bonding film. Moreover, since a die-bonding film has a certain amount of flexibility in a low temperature state, adhesiveness with a dicing sheet improves. As a result, it is possible to prevent the dicing sheet and the die bond film from being peeled off during low-temperature transportation.
Moreover, since the loss elastic modulus in 0 degreeC of a die-bonding film is 20 Mpa or more, the shape as a film can be maintained.

  The said structure WHEREIN: It is preferable that the loss elastic modulus in 0 degreeC of the said dicing sheet is 10 Mpa or more and 500 Mpa or less.

When the loss elastic modulus at 0 ° C. of the dicing sheet is 500 MPa or less, the dicing sheet has a certain degree of flexibility in a low temperature state. Therefore, when transporting in a low temperature state, it is possible to suppress the occurrence of cracks and chips on the dicing sheet. Moreover, since a dicing sheet has a certain amount of flexibility in a low temperature state, adhesiveness with a die-bonding film improves. As a result, it is possible to further suppress the dicing sheet and the die bond film from being separated in a low temperature state.
Moreover, since the loss elastic modulus at 0 degreeC of a dicing sheet is 10 Mpa or more, the shape as a film can be maintained.

  In the above configuration, the peeling force when peeling the die-bonding film from the dicing sheet under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peel test is 0.01 N / 20 mm or more and 2 N / 20 mm or less. Preferably there is.

  When the peeling force when peeling the die-bonding film from the dicing sheet is 0.01 N / 20 mm or more under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peeling test, it is transported in a low temperature state. In this case, the dicing sheet and the die bond film can be further prevented from peeling off. Moreover, it can be made to peel suitably at the time of pick-up as the said peeling force is 2 N / 20mm or less.

  In the above configuration, the rate of change of the peeling force when peeling the die-bonding film from the dicing sheet under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peel test before and after standing for 72 hours at 0 ° C. Is preferably in the range of -75% to 75%.

If the rate of change is in the range of -75% to 75%, it can be said that there is little change in film properties when stored at 0 ° C. Therefore, long-term storage is possible.
The rate of change is obtained by the following formula.
[(Peeling force after being left) − (Peeling force before being left)] / (Peeling force before being left) × 100 (%)

  The said structure WHEREIN: It is preferable that the tensile breaking elongation at 0 degreeC of the said die-bonding film is 10% or more and 500% or less.

  When the tensile bond elongation at 0 ° C. of the die bond film is 10% or more, it can be made difficult to break during low-temperature transportation. Moreover, peeling of a die-bonding film and a dicing sheet can be prevented as the tensile breaking elongation at 0 degreeC of the said die-bonding film is 500% or less.

  The said structure WHEREIN: It is preferable that the said die-bonding film contains 85 weight% or more of acrylic copolymers with respect to the whole organic resin component.

  When the die-bonding film contains 85% by weight or more of an acrylic copolymer with respect to the entire organic resin component, it is possible to further suppress the occurrence of cracks and cracks when transported at a low temperature.

  The said structure WHEREIN: The said die-bonding film is obtained by superposing | polymerizing the monomer raw material containing butyl acrylate and acrylonitrile, and contains the acryl-type copolymer which has an epoxy group or a carboxyl group as a functional group. preferable.

  When an acrylic copolymer having an epoxy group or a carboxyl group is contained as a functional group, crosslinking can be formed by the functional group by heating in the crosslinking formation step. Moreover, the cohesive force in a bridge | crosslinking formation process can be improved as the said acrylic copolymer is a thing obtained by superposing | polymerizing the monomer raw material containing acrylonitrile. As a result, the adhesive force after the cross-linking formation step can be improved.

  The said structure WHEREIN: It is preferable that the said die-bonding film contains the thermal crosslinking agent whose softening point is 0 degrees C or less.

  When a thermal crosslinking agent having a softening point of 0 ° C. or less is contained, the content of the fixing component is suppressed even in a low temperature state. Therefore, when transported in a low temperature state, a die bond film that is difficult to break due to impact or the like can be obtained.

  In addition, a semiconductor device according to the present invention is manufactured using the above-described die bond film with a dicing sheet.

In addition, a method for manufacturing a semiconductor device according to the present invention includes:
Preparing a die-bonding film with a dicing sheet as described above;
A bonding step of bonding the die bond film of the die bond film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the die bond film to form a chip-shaped semiconductor chip; and
A pick-up step of picking up the semiconductor chip together with the die-bonding film from the die-bonding film with the dicing sheet;
A die-bonding step of die-bonding the semiconductor chip on an adherend through the die-bonding film.

  According to the said structure, since the said die-bonding film with a dicing sheet is used, it is suppressed that a crack and a crack generate | occur | produce in a die-bonding film or a dicing sheet. In addition, the dicing sheet and the die bond film are prevented from being peeled off during low-temperature transportation or the like. As a result, the yield of the semiconductor device manufactured using the die-bonding film with the dicing sheet is improved.

It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing sheet which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment.

(Die bond film with dicing sheet)
A die bond film with a dicing sheet according to an embodiment of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing a die bond film with a dicing sheet according to an embodiment of the present invention.

  As shown in FIG. 1, the die bond film 10 with a dicing sheet has a configuration in which a die bond film 16 is laminated on a dicing sheet 11. The dicing sheet 11 is configured by laminating an adhesive layer 14 on a substrate 12, and the die bond film 16 is provided on the adhesive layer 14.

  In the present embodiment, the dicing sheet 11 will be described with respect to the case where there is a portion 14b that is not covered with the die bond film 16, but the dicing film with a dicing sheet according to the present invention is not limited to this example. A die bond film may be laminated on the dicing sheet so as to cover the entire dicing sheet.

The loss elastic modulus at 0 ° C. of the die bond film 16 is 20 MPa or more and 500 MPa or less, preferably 18 MPa or more and 400 MPa or less, and more preferably 15 MPa or more and 300 MPa or less. Since the loss elastic modulus at 0 ° C. of the die bond film 16 is 500 MPa or less, it has a certain degree of flexibility in a low temperature state. Therefore, when transporting in a low temperature state, the die bond film 16 can be prevented from being cracked or chipped. Moreover, since the die bond film 16 has a certain degree of flexibility in a low temperature state, the adhesion with the dicing sheet 11 is improved. As a result, it is possible to prevent the dicing sheet 11 and the die bond film 16 from being peeled off during low-temperature transportation.
Moreover, since the loss elastic modulus in 0 degreeC of the die-bonding film 16 is 20 Mpa or more, the shape as a film can be maintained.
In addition, the loss elastic modulus in 0 degreeC of a die-bonding film is based on the method as described in an Example.
The loss elastic modulus can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16 and the average particle size and content of the filler.

The die bond film 16 preferably has a tensile breaking elongation at 0 ° C. of 10% or more and 500% or less, more preferably 12% or more and 400% or less, and further preferably 15% or more and 300% or less. preferable. When the tensile elongation at break of the die bond film 16 at 0 ° C. is 10% or more, it can be more difficult to break during low-temperature transportation. Moreover, peeling of a die-bonding film and a dicing sheet can be prevented as the tensile breaking elongation at 0 degreeC of the die-bonding film 16 is 500% or less.
The tensile elongation at break can be controlled by the material constituting the die bond film 16. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 16 and the average particle size and content of the filler.

  Examples of the material constituting the die bond film 16 include thermoplastic resins.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and an ester of acrylic acid or an ester of methacrylic acid (alkyl acrylate, or having a linear or branched alkyl group having 30 to 30 carbon atoms, particularly 4 to 18 carbon atoms, or Examples thereof include polymers (acrylic copolymers) containing one or more of (alkyl methacrylate) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalenesulfonic acid, phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate, and acrylonitrile.

  Especially, it is preferable that the die-bonding film 16 is obtained by polymerizing a monomer raw material containing butyl acrylate and acrylonitrile, and contains an acrylic copolymer having an epoxy group or a carboxyl group as a functional group. . When an acrylic copolymer having an epoxy group or a carboxyl group is contained as a functional group, crosslinking can be formed by the functional group by heating in the crosslinking formation step. Moreover, the cohesive force in a bridge | crosslinking formation process can be improved as the said acrylic copolymer is a thing obtained by superposing | polymerizing the monomer raw material containing acrylonitrile. As a result, the adhesive force after the cross-linking formation step can be improved.

  The blending ratio of the thermoplastic resin is not particularly limited, but is preferably 35% by weight or more and more preferably 40% by weight or more based on the entire die bond film 16 from the viewpoint of imparting flexibility. . Moreover, from a heat resistant viewpoint, it is preferable that it is 100 weight% or less with respect to the whole die-bonding film 16, and it is more preferable that it is 98 weight% or less.

  Especially, it is preferable that the die-bonding film 16 contains 85 weight% or more of an acrylic copolymer with respect to the whole organic resin component, It is more preferable to contain 88 weight% or more, Containing 90 weight% or more Is more preferable. When the die-bonding film 16 contains 85% by weight or more of an acrylic copolymer with respect to the entire organic resin component, it is possible to further suppress the occurrence of cracks and chips when transported in a low temperature state.

Moreover, it is preferable that the die-bonding film 16 contains the thermal crosslinking agent whose softening point is 0 degrees C or less. When a thermal crosslinking agent having a softening point of 0 ° C. or less is contained, the content of the fixing component is suppressed even in a low temperature state. Therefore, when transported in a low temperature state, a die bond film that is difficult to break due to impact or the like can be obtained. In addition, when a thermal crosslinking agent having a softening point of 0 ° C. or lower is included, a functional group and a crosslinked structure of the thermoplastic resin can be formed by heating. In this specification, the thermal cross-linking agent refers to an agent that forms a cross-linked structure with a functional group of a thermoplastic resin.
In this specification, the softening point is defined as a value measured based on a softening point test method (ring ball method) defined in JIS K 5902 and JIS K 2207. Specifically, the sample is melted as quickly as possible, and is carefully filled so that no bubbles are formed in the ring placed on a flat metal plate. After cooling, cut off the raised part from the plane including the top of the ring with a slightly heated sword. Next, a supporter (ring stand) is put in a glass container (heating bath) having a diameter of 85 mm or more and a height of 127 mm or more, and glycerin is poured until the depth becomes 90 mm or more. Next, the steel ball (diameter 9.5 mm, weight 3.5 g) and the ring filled with the sample are immersed in glycerin so as not to contact each other, and the temperature of glycerin is kept at 20 ° C. ± 5 ° C. for 15 minutes. Next, a steel ball is placed on the center of the surface of the sample in the ring, and this is placed in a fixed position on the support. Next, the distance from the upper end of the ring to the glycerin surface is maintained at 50 mm, a thermometer is placed, the position of the center of the mercury bulb of the thermometer is set to the same height as the center of the ring, and the container is heated. The flame of the Bunsen burner used for heating is placed between the center and the edge of the bottom of the container so that the heating is even. It should be noted that the rate at which the bath temperature increases after reaching 40 ° C. after heating has started must be 5.0 ± 0.5 ° C. per minute. The temperature at the time when the sample gradually softens and flows down from the ring and finally comes into contact with the bottom plate is read and used as the softening point. Two or more softening points are measured simultaneously, and the average value is adopted.

  Specific examples of the thermal crosslinking agent having a softening point of 23 ° C. or lower include an epoxy resin having a softening point of 23 ° C. or lower and a phenol resin having a softening point of 23 ° C. or lower. However, when adding a plurality of types of thermal cross-linking agents, it is preferable that the thermal cross-linking agent is selected so as to suitably form a cross-linked structure with the functional group of the thermoplastic resin, so that the thermal cross-linking agents do not react with each other. It is preferable to select.

  The content of the thermal crosslinking agent is preferably 0.5 to 35% by weight, more preferably 0.5 to 20% by weight, and more preferably 0.5 to 15% by weight with respect to the entire organic resin component. % Is more preferable. When the content of the thermal crosslinking agent is 0.5% by weight or more with respect to the organic resin component, a crosslinked structure can be suitably formed with the functional group of the thermoplastic resin. On the other hand, when it is 35% by weight or less, the gap between the adherend and the die bond film can be filled by the heat and pressure during molding.

  The epoxy resin is not particularly limited as long as it has a softening point of 0 ° C. or less. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl Type, naphthalene type, fluorene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin, polyfunctional epoxy resin, hydantoin type, trisglycidyl isocyanurate type or Epoxy resins such as glycidylamine type can be used. These can be used alone or in combination of two or more.

  The phenol resin is not particularly limited as long as it has a softening point of 0 ° C. or lower. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more.

  Moreover, a filler can be suitably mix | blended with the die-bonding film 16 according to the use. The blending of the filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoints of characteristics such as improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. Further, from the viewpoint that the above properties are well balanced, crystalline silica or amorphous silica is preferable. In addition, a conductive substance (conductive filler) may be used as the inorganic filler for the purpose of imparting conductivity and improving thermal conductivity. Examples of the conductive filler include metal powder in which silver, aluminum, gold, cylinder, nickel, conductive alloy and the like are made into a spherical shape, needle shape and flake shape, metal oxide such as alumina, amorphous carbon black, graphite and the like.

The average particle size of the filler is preferably 0.001 to 1 μm, and more preferably 0.01 to 0.6 μm. By making the average particle diameter of the filler 0.001 μm or more, it is possible to prevent the viscosity of the die bond film from increasing. Moreover, by setting it as 1 micrometer or less, popping out of the filler from a die-bonding film can be suppressed, and damage to a to-be-adhered body can be suppressed. In addition, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution analyzer (The product made from HORIBA, apparatus name; LA-910).
The amount of the filler added is preferably 0 to 60% by weight and more preferably 0 to 50% by weight with respect to the entire die bond film 16.

  In addition to the said filler, another additive can be suitably mix | blended with the die-bonding film 16 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  Although the thickness (in the case of a laminated body) of the die-bonding film 16 is not specifically limited, 3-200 micrometers is preferable, More preferably, it is 5-100 micrometers, More preferably, it is 5-30 micrometers.

  As described above, the dicing sheet 11 has a configuration in which the pressure-sensitive adhesive layer 14 is laminated on the substrate 12.

The loss elastic modulus at 0 ° C. of the dicing sheet 11 is preferably 10 MPa or more and 500 MPa or less, more preferably 8 MPa or more and 400 MPa or less, and further preferably 5 MPa or more and 300 MPa or less. When the loss elastic modulus at 0 ° C. of the dicing sheet 11 is 500 MPa or less, the dicing sheet 11 has a certain degree of flexibility in a low temperature state. Therefore, when transporting in a low temperature state, it is possible to prevent the dicing sheet 11 from being cracked or chipped. Moreover, since the dicing sheet 11 has a certain degree of flexibility in a low temperature state, the adhesion with the die bond film 16 is improved. As a result, it is possible to further suppress the dicing sheet 11 and the die bond film 16 from being separated in a low temperature state.
Moreover, since the loss elastic modulus at 0 degreeC of the dicing sheet 11 is 10 Mpa or more, the shape as a film can be maintained.
In addition, the loss elastic modulus at 0 degreeC of a dicing sheet is based on the method as described in an Example.
The loss elastic modulus can be controlled by the material constituting the dicing sheet 11. For example, it can be controlled by the type and content of the thermoplastic resin constituting the dicing sheet 11.

  The base material 12 serves as a strength matrix of the die bond film 10 with a dicing sheet. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (Paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), or the like. When the adhesive layer 14 described later is formed of a radiation curable adhesive, the base material 12 is preferably formed of a material that transmits the radiation.

  The surface of the substrate 12 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. As the base material 12, the same kind or different kinds can be appropriately selected and used, and a blend of several kinds of materials can be used as necessary.

  The thickness of the substrate 12 is not particularly limited and can be determined as appropriate, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 14, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are resistant to contamination such as semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably about 200,000 to 3,000,000, and particularly preferably about 300,000 to 1,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. In general, about 5 parts by weight or less, further 0.1 to 5 parts by weight is preferably blended with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifiers and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 14 may be formed of a radiation curable pressure-sensitive adhesive. A radiation-curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

For example, by curing the radiation-curing pressure-sensitive adhesive layer 14 in accordance with the wafer attachment portion 16a of the die bond film 16 shown in FIG. 1, the portion 14a having a significantly reduced adhesive force can be easily formed. Since the die bond film 16 is affixed to the portion 14a that has been cured and has reduced adhesive strength, the interface between the portion 14a of the pressure-sensitive adhesive layer 14 and the die bond film 16 has a property of being easily peeled off during pickup. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 14b. A wafer ring can be firmly fixed to the portion 14b.
In addition, when laminating | stacking a die-bonding film on a dicing sheet so that the whole dicing sheet may be covered, a wafer ring can be fixed to the outer peripheral part of a die-bonding film.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy in terms of molecular design to introduce the carbon-carbon double bond into the polymer side chain. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  The radiation curable pressure-sensitive adhesive layer 14 may contain a compound that is colored by irradiation with radiation, if necessary. By including the compound to be colored in the pressure-sensitive adhesive layer 14 by irradiation, only the irradiated portion can be colored. That is, the portion 14a corresponding to the wafer pasting portion 16a shown in FIG. 1 can be colored. Therefore, it can be immediately determined by visual observation whether the adhesive layer 14 has been irradiated with radiation, the wafer pasting portion 16a can be easily recognized, and the workpieces can be easily pasted together. In addition, when detecting a semiconductor chip by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor chip is picked up.

  A compound that is colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation, but becomes colored by radiation irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various known color formers can be used in combination.

  Such a compound that is colored by irradiation with radiation may be once dissolved in an organic solvent or the like and then included in the radiation-curable adhesive, or may be finely powdered and included in the pressure-sensitive adhesive. The use ratio of this compound is 10% by weight or less in the pressure-sensitive adhesive layer 14, preferably 0.01 to 10% by weight, more preferably 0.5 to 5% by weight. If the ratio of the compound exceeds 10% by weight, the radiation applied to the pressure-sensitive adhesive layer 14 is excessively absorbed by the compound, so that the portion 14a of the pressure-sensitive adhesive layer 14 is not sufficiently cured, and is sufficiently sticky. Power may not decrease. On the other hand, in order to sufficiently color, it is preferable that the ratio of the compound is 0.01% by weight or more.

  In the case where the pressure-sensitive adhesive layer 14 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 14 so that the pressure-sensitive adhesive force of the portion 14a in the pressure-sensitive adhesive layer 14 <the pressure-sensitive adhesive strength of the other portion 14b. May be irradiated.

  Examples of the method for forming the portion 14a on the pressure-sensitive adhesive layer 14 include a method in which after the radiation-curable pressure-sensitive adhesive layer 14 is formed on the substrate 12, the portion 14a is partially irradiated with radiation to be cured. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to a portion other than the die-bonding film 16 wafer attaching portion 16a is formed. Moreover, the method etc. of irradiating with a spot radiation and making it harden | cure are mentioned. The radiation-curable pressure-sensitive adhesive layer 14 can be formed by transferring what is provided on the separator onto the substrate 12. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 14 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 14 is formed of a radiation curable pressure-sensitive adhesive, all or a part of the base material 12 other than the part corresponding to the wafer bonding part 16a is shielded from light. It is possible to form the portion 14a having a reduced adhesive force by forming a radiation-curing pressure-sensitive adhesive layer 14 and then irradiating it with radiation to cure the portion corresponding to the wafer pasting portion 16a. As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the die-bonding film 10 with a dicing sheet can be manufactured efficiently.

  In the case where curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 14 by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 14 with a separator, a method of irradiating ultraviolet rays or the like in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 14 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the die bond film 16. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

  In the die bond film 10 with a dicing sheet, the peeling force when peeling the die bond film 16 from the dicing sheet 11 under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peel test is 0.01 N / 20 mm or more. 2N / 20 mm or less is preferable, 0.02 N / 20 mm or more and 1.5 N / 20 mm or less is more preferable, and 0.03 N / 20 mm or more and 1.0 N / 20 mm or less is more preferable. When the peeling force is 0.01 N / 20 mm or more, the dicing sheet 11 and the die bond film 16 can be further prevented from peeling when transported in a low temperature state. Moreover, it can be made to peel suitably at the time of pick-up as the said peeling force is 2 N / 20mm or less.

  In the die bond film 10 with a dicing sheet, the peeling force when peeling the die bond film 16 from the dicing sheet 11 under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peel test is left at 0 ° C. for 72 hours. The rate of change before and after is preferably in the range of −75% to 75%, more preferably in the range of −50% to 50%, and still more preferably in the range of −40% to 40%. If the rate of change is in the range of -75% to 75%, it can be said that there is little change in film properties when stored at 0 ° C. Therefore, long-term storage is possible.

  The die bond film 16 of the die bond film with a dicing sheet 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film 16 until it is put into practical use. Further, the separator can be used as a support base material when the die bond film 16 is transferred to the pressure-sensitive adhesive layer 14. The separator is peeled off when a workpiece (semiconductor wafer) is stuck on the die bond film 16 of the die bond film 10 with a dicing sheet. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

The die-bonding film 10 with a dicing sheet according to the present embodiment is produced, for example, as follows.
First, the base material 12 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 12 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 14 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 14 may be formed. Then, the adhesive layer 14 is bonded together with the separator on the base material 12. Thereby, the dicing sheet 11 is produced.

The die bond film 16 is produced as follows, for example.
First, an adhesive composition solution that is a material for forming the die bond film 16 is prepared. As described above, the adhesive composition solution contains the resin and other additives as required.

  Next, the adhesive composition solution is applied onto the base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form the die bond film 16. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating adhesive composition solution on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the die-bonding film 16 may be formed. Then, an adhesive bond layer is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing sheet 11 and the die bond film 16, and both are bonded so that the adhesive layer 14 and the die bond film 16 become a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Thereby, the die-bonding film 10 with a dicing sheet is obtained.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device will be described.
Below, the manufacturing method of the semiconductor device using the die-bonding film 10 with a dicing sheet is demonstrated.

The method for manufacturing a semiconductor device according to the present embodiment includes a step of preparing the die bond film with a dicing sheet described above,
A bonding step of bonding the die bond film of the die bond film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the die bond film to form a chip-shaped semiconductor chip; and
A pick-up step of picking up the semiconductor chip together with the die-bonding film from the die-bonding film with the dicing sheet;
A die-bonding step of die-bonding the semiconductor chip on an adherend through the die-bonding film.

  In the method for manufacturing a semiconductor device according to the present embodiment, first, a die bond film with a dicing sheet 10 is prepared (preparing step). The die-bonding film 10 with a dicing sheet is used as follows by appropriately separating a separator arbitrarily provided on the die-bonding film 16. Below, the case where the die-bonding film 10 with a dicing sheet is used is demonstrated to an example, referring FIG.1 and FIG.2.

  First, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 16a of the die bond film 16 in the die bond film 10 with a dicing sheet, and this is adhered and held and fixed (bonding step). This step is performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not specifically limited, For example, it is preferable to exist in the range of 40-90 degreeC.

  Next, the semiconductor wafer 4 is diced (dicing process). Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. The dicing method is not particularly limited. For example, the dicing is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called full cut for cutting up to the die bond film 10 with a dicing sheet can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 4 is bonded and fixed by the die bond film 10 with a dicing sheet, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

  Next, the semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 adhered and fixed to the die bond film 10 with a dicing sheet (pickup step). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 5 from the die bond film with dicing sheet 10 side with a needle and picking up the pushed semiconductor chip 5 with a pickup device, etc. can be mentioned.

  As pick-up conditions, the needle push-up speed is preferably 5 to 100 mm / sec, and more preferably 5 to 10 mm / sec in terms of preventing chipping.

  Here, when the pressure-sensitive adhesive layer 2 is a radiation curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with radiation. Thereby, the adhesive force with respect to the die-bonding film 16 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of radiation irradiation are not particularly limited, and may be set as necessary. Moreover, a well-known thing can be used as a light source used for radiation irradiation. When the pressure-sensitive adhesive layer is irradiated with radiation and cured in advance and the cured pressure-sensitive adhesive layer and the die bond film are bonded together, the radiation irradiation here is not necessary.

  Next, the picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 through the die-bonding film 16 (die-bonding process). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by mounting a semiconductor chip and electrically connecting to the semiconductor chip.

Next, the die bond film 16 is heated to form a crosslinked structure, and the semiconductor chip 5 is bonded and fixed to the adherend 6 to improve the heat resistance strength (crosslinking formation step). The heating temperature can be 80 to 200 ° C, preferably 100 to 175 ° C, more preferably 120 to 160 ° C. The heating time can be 0.1 to 24 hours, preferably 0.1 to 3 hours, more preferably 0.2 to 1 hour. Moreover, you may perform bridge | crosslinking formation on pressurization conditions. The pressurization condition is preferably in a range of 1~20kg / cm ^2, in the range of 3~15kg / cm ² is more preferable. Crosslinking formation under pressure can be performed, for example, in a chamber filled with an inert gas. In addition, what the semiconductor chip 5 adhere | attached and fixed to the board | substrate etc. via the die-bonding film 16 can be used for a postcure process.

  The shear bond strength of the die bond film 16 after the heat treatment is preferably 0.2 MPa or more with respect to the adherend 6, more preferably 0.2 to 10 MPa. When the shear bond strength of the die bond film 16 is at least 0.2 MPa or more, the bonding surface between the die bond film 16 and the semiconductor chip 5 or the adherend 6 by the ultrasonic vibration or heating in the wire bonding process. No shear deformation occurs. That is, the semiconductor chip does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  Next, if necessary, as shown in FIG. 2, the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by a bonding wire 7. (Wire bonding process). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. This step can also be performed without forming a cross-linking of the die bond film 16.

  Next, as necessary, as shown in FIG. 2, the semiconductor chip 5 is sealed with a sealing resin 8 (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step can be performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. Thereby, the sealing resin 8 is cured, and the semiconductor chip 5 and the adherend 6 are fixed through the die bond film 16. That is, in the present invention, even when the post-curing step described later is not performed, the die-bonding film 16 can be fixed in this step, which contributes to a reduction in the number of manufacturing steps and a reduction in the manufacturing period of the semiconductor device. Can do. In this sealing step, a method of embedding the semiconductor chip 5 in a sheet-like sealing sheet (see, for example, JP 2013-7028 A) can also be employed.

  Next, heating is performed as necessary to completely cure the insufficiently cured sealing resin 8 in the sealing process (post-curing process). Even when the die bond film 16 is not completely crosslinked in the sealing process, the die bond film 16 can be completely crosslinked with the sealing resin 8 in this process. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  In the semiconductor device manufacturing method according to the present embodiment, wire bonding is performed without performing a cross-linking forming step by heat treatment of the die bond film 16 after temporary fixing by the die bonding step, and the semiconductor chip 5 is further sealed with the sealing resin 8. And sealing resin 8 may be cured (post-cured). In this case, the shear adhesive force at the time of temporary fixing of the die bond film 16 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 6. If the shear bonding force at the time of temporarily fixing the die bond film 16 is at least 0.2 MPa or more, even if the wire bonding step is performed without passing through the heating step, the die bond film 16 and the semiconductor are subjected to ultrasonic vibration or heating in the step. Shear deformation does not occur on the bonding surface with the chip 5 or the adherend 6. That is, the semiconductor chip does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing. In addition, temporary fixation means the state which fixed this semiconductor chip 5 by heating this die-bonding film to such an extent that the bridge | crosslinking reaction of a die-bonding film did not fully advance so that there may be no trouble in a subsequent process. In addition, when performing wire bonding without passing through the bridge | crosslinking formation process by heat processing of a die-bonding film, the said post-curing process is equivalent to the bridge | crosslinking formation process in this specification.

  In addition, the die-bonding film with a dicing sheet of this invention can be used suitably also when laminating | stacking a some semiconductor chip and carrying out three-dimensional mounting. At this time, the die bond film and the spacer may be laminated between the semiconductor chips, or only the die bond film may be laminated between the semiconductor chips without laminating the spacers. Is possible.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited. In the following, “parts” means parts by weight.

<Production of die bond film>
(Example 1)
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corp., trade name: SG-708-6, ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers: content of each main monomer: ethyl Acrylate 51 wt%, butyl acrylate 26 wt%, acrylonitrile 19 wt%)
97 parts (b) filler (manufactured by Admatechs, product name: SO-E1, average particle size: 0.25 μm)
100 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness of 20 μm was produced.

(Example 2)
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corp., trade name: SG-708-6, ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers: content of each main monomer: ethyl Acrylate 51 wt%, butyl acrylate 26 wt%, acrylonitrile 19 wt%)
83 parts (b) thermal crosslinking agent (liquid epoxy resin (softening point: 0 ° C. or less), manufactured by Mitsubishi Chemical Corporation, product name: JER828)
12 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film B having a thickness of 20 μm was produced.

(Example 3)
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-P3, content of each main monomer: ethyl acrylate 30) containing ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers Weight%, butyl acrylate 39 weight%, acrylonitrile 28 weight%)
90 parts (b) thermal crosslinking agent (liquid phenol resin (softening point: 0 ° C. or lower), manufactured by Meiwa Kasei Co., Ltd., product name: MEH-8000H)
5 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film C having a thickness of 20 μm was produced.

(Comparative Example 1)
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corp., trade name: SG-708-6, ethyl acrylate, butyl acrylate, and acrylonitrile as main monomers: content of each main monomer: ethyl Acrylate 51 wt%, butyl acrylate 26 wt%, acrylonitrile 19 wt%)
80 parts (b) epoxy resin solid at normal temperature (23 ° C., manufactured by DIC, product name: HP-7200L)
80 parts (c) filler (manufactured by Admatechs, product name: SO-E1, average particle size: 0.25 μm)
300 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film D having a thickness of 20 μm was produced.

(Comparative Example 2)
The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.
(A) Acrylate ester copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG-28GM, butyl acrylate and acrylonitrile as the main monomer, content of each main monomer: 86% by weight of butyl acrylate, Acrylonitrile 7% by weight)
90 parts (b) phenol resin solid at normal temperature (23 ° C.) (Maywa Kasei Co., Ltd., product name: MEH-7500)
5 copies

  This adhesive composition solution was applied onto a release film (release liner) made of a polyethylene terephthalate film having a thickness of 38 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film E having a thickness of 20 μm was produced.

(Measurement of loss elastic modulus of die-bonded film at 0 ° C)
The loss elastic modulus at 0 degreeC of the die-bonding film which concerns on an Example and a comparative example was measured. Specifically, the die bond films of Examples and Comparative Examples were laminated to a thickness of 200 μm, respectively, and used as measurement samples having a width of 10 mm and a length of 40 mm. Next, using a dynamic viscoelasticity measuring device (RSA (III), manufactured by Rheometric Scientific), the loss elastic modulus at -20 to 300 ° C. was measured by increasing the distance between chucks 22.5 mm, frequency 1 Hz, and the like. The measurement was performed under the condition of a temperature rate of 10 ° C./min, and the loss elastic modulus at 0 ° C. at that time was used.

(Measurement of tensile elongation at 0 ° C of die bond film)
The tensile break elongation at 0 degreeC of the die-bonding film which concerns on an Example and a comparative example was measured. Specifically, the die bond films of Examples and Comparative Examples were laminated so as to have a thickness of 200 μm and cut so as to form strip-shaped measurement pieces having an initial length of 40 mm and a width of 10 mm, respectively. Next, using a Tensilon universal tester (Autograph, manufactured by Shimadzu Corporation), the tensile elongation at break at 0 ° C. was measured under the conditions of a tensile speed of 50 mm / min and a chuck distance of 10 mm. The results are shown in Table 1.

<Dicing sheet>
Dicing sheets A according to Examples 1 to 3 and Comparative Examples 1 and 2 (common to Examples 1 to 3 and Comparative Examples 1 to 2) were prepared as follows.

In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer and a stirring device, 75 parts of 2-ethylhexyl acrylate (2EHA), 20 parts of 2-hydroxyethyl acrylate (HEA), 0.2 part of benzoyl peroxide, And 60 parts of toluene was put, and the polymerization process was performed at 61 degreeC in nitrogen stream for 6 hours, and the acrylic polymer A was obtained.
To this acrylic polymer A, 8 parts of 2-methacryloyloxyethyl isocyanate (MOI) was added and subjected to an addition reaction for 48 hours at 50 ° C. in an air stream to obtain acrylic polymer A ′.
Next, for 100 parts of acrylic polymer A ′, 1 part of an isocyanate-based crosslinking agent (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 651”, Ciba (Specialty Chemicals) 4 parts were added to prepare an adhesive solution.
The pressure-sensitive adhesive solution prepared above was applied on the surface of the PET release liner that had been subjected to the silicone treatment, and heat-crosslinked at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer precursor having a thickness of 30 μm. Next, a base film with a thickness of 80 μm having a two-layer structure of a polypropylene layer (thickness 40 μm) and a polyethylene layer (thickness 40 μm) is prepared, and the base material is bonded to the surface of the pressure-sensitive adhesive precursor with the polypropylene layer as a bonding surface. The film was laminated. Thereafter, it was stored at 50 ° C. for 24 hours. Only the part (diameter 220 mm) corresponding to the semiconductor wafer attachment part (diameter 200 mm) of the adhesive layer precursor was irradiated with ultraviolet rays of 500 mJ to form an adhesive layer. Thereby, a dicing sheet A was obtained.
The base material has a width of 390 mm and a length of 200000 mm. Moreover, the ultraviolet rays were irradiated so that the center-to-center distance between the circular irradiations was 380 mm.

(Measurement of loss modulus of dicing sheet at 0 ° C)
The loss elastic modulus at 0 ° C. of the dicing sheets according to Examples and Comparative Examples was measured. Specifically, the dicing sheets of Examples and Comparative Examples were each laminated to a thickness of 200 μm to obtain a measurement sample having a width of 10 mm and a length of 40 mm. Next, using a dynamic viscoelasticity measuring device (RSA (III), manufactured by Rheometric Scientific), the loss elastic modulus at -20 to 300 ° C. was measured by increasing the distance between chucks 22.5 mm, frequency 1 Hz, and the like. The measurement was performed under the condition of a temperature rate of 10 ° C./min, and the loss elastic modulus at 0 ° C. was used.

<Production of die bond film with dicing sheet>
(Example 1)
300 die-bonding films A having a diameter of 330 mm were punched out, and these were bonded to a long dicing sheet A in a row with an interval of 50 mm. Thus, a die bond film A with a dicing sheet according to Example 1 was obtained. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Example 2)
300 die-bonding films B having a diameter of 330 mm were punched out, and these were bonded to a long dicing sheet A in a row with an interval of 50 mm. Thus, a die bond film A with a dicing sheet according to Example 1 was obtained. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Example 3)
300 die-bonding films C having a diameter of 330 mm were punched out, and these were bonded to a long dicing sheet A in a row with an interval of 50 mm. Thus, a die bond film A with a dicing sheet according to Example 1 was obtained. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Comparative Example 1)
300 die-bonding films D having a diameter of 330 mm were punched out, and these were bonded to a long dicing sheet A in a row with an interval of 50 mm. Thus, a die bond film A with a dicing sheet according to Example 1 was obtained. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Comparative Example 2)
300 die-bonding films E having a diameter of 330 mm were punched out, and this was bonded to a long dicing sheet A in a row with a spacing of 50 mm. Thus, a die bond film A with a dicing sheet according to Example 1 was obtained. The bonding conditions were 40 ° C., 10 mm / second, and a linear pressure of 30 kgf / cm.

(Measurement of peeling force when peeling the die bond film from the dicing sheet)
Using a tensile tester (manufactured by Shimadzu Corporation, trade name “AGS-J”), the die bond film is peeled from the dicing sheet under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peel test. Then, the peeling force at that time was measured. At that time, BT-315 manufactured by Nitto Denko was used as the backing tape for the die bond film. The results are shown in Table 1.
In addition, the same test was performed after leaving at 0 ° C. for 72 hours, and the rate of change before and after leaving at 0 ° C. for 72 hours was obtained. The results are shown in Table 1.
In addition, the said change rate was calculated | required by the following formula.
[(Peeling force after being left) − (Peeling force before being left)] / (Peeling force before being left) × 100 (%)

(Appearance evaluation after refrigerated storage)
The produced die-bonding film with a dicing sheet was wound around a core having a diameter of 5 cm. The winding tension applied to the die bond film with a dicing sheet at this time was 12 N / m. Then, after storing for 72 hours in a cool dark place at 0 ° C., it was stored in a cool dark place at 23 ° C. for 72 hours. After storing again in a cool dark place at 0 ° C. for 72 hours, the die bond film with a dicing sheet was taken out in a cool dark place at 23 ° C., and it was confirmed by visual observation whether cracks or chips were generated on the die bond film. Further, it was confirmed whether or not peeling occurred between the dicing sheet and the die bond film.
Yes, if there is no cracking or chipping in the die bond film, and there is no peeling between the dicing sheet and the die bonding film, whether the die bonding film is cracked or chipped, or the dicing sheet and die bonding film The case where peeling occurred was evaluated as x. The results are shown in Table 1.

DESCRIPTION OF SYMBOLS 10 Die bond film with dicing sheet 11 Dicing sheet 12 Base material 14 Adhesive layer 16 Die bond film 4 Semiconductor wafer 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin

Claims (10)

A die bond film with a dicing sheet in which a die bond film is provided on the dicing sheet,
The die bond film with a dicing sheet, wherein the loss elastic modulus at 0 ° C. of the die bond film is 20 MPa or more and 500 MPa or less.   The die bond film with a dicing sheet according to claim 1, wherein the loss elastic modulus at 0 ° C of the dicing sheet is 10 MPa or more and 500 MPa or less.   The peeling force when peeling the die-bonding film from the dicing sheet under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peel test is 0.01 N / 20 mm or more and 2 N / 20 mm or less. The die-bonding film with a dicing sheet according to claim 1 or 2.   The rate of change of the peel force when peeling the die-bonding film from the dicing sheet under the conditions of a measurement temperature of 0 ° C., a tensile speed of 300 mm / min, and a T-type peel test is −75 The die-bonding film with a dicing sheet according to any one of claims 1 to 3, wherein the die-bonding film has a range of% to 75%.   The die bond film with a dicing sheet according to any one of claims 1 to 4, wherein the tensile bond elongation at 0 ° C of the die bond film is 10% or more and 500% or less.   The die-bonding film with a dicing sheet according to any one of claims 1 to 5, wherein the die-bonding film contains 85% by weight or more of an acrylic copolymer with respect to the entire organic resin component.   The die bond film is obtained by polymerizing a monomer raw material containing butyl acrylate and acrylonitrile, and contains an acrylic copolymer having an epoxy group or a carboxyl group as a functional group. Item 10. A die bond film with a dicing sheet according to any one of Items 1 to 6.   The die-bonding film with a dicing sheet according to any one of claims 1 to 7, wherein the die-bonding film contains a thermal crosslinking agent having a softening point of 0 ° C or lower.   A semiconductor device manufactured using the die-bonding film with a dicing sheet according to claim 1. Preparing a die-bonding film with a dicing sheet according to any one of claims 1 to 8,
A bonding step of bonding the die bond film of the die bond film with the dicing sheet and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the die bond film to form a chip-shaped semiconductor chip; and
A pick-up step of picking up the semiconductor chip together with the die-bonding film from the die-bonding film with the dicing sheet;
And a die-bonding step of die-bonding the semiconductor chip onto an adherend through the die-bonding film.

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