JP6328467B2 - Thermosetting die-bonding film, die-bonding film with dicing sheet, method for manufacturing semiconductor device, and semiconductor device - Google Patents

Description

  The present invention relates to a thermosetting die bond film, a die bond film with a dicing sheet, a method for manufacturing a semiconductor device, and a semiconductor device.

  In recent years, there has been an increasing demand for higher density and higher integration of semiconductor devices in response to higher functions of electronic devices, and semiconductor packages have been increasing in capacity and density. In order to meet such demands, for example, a method for reducing the size, thickness, and capacity of a semiconductor package by stacking other semiconductor chips on a semiconductor chip in multiple stages has been studied. Usually, in such a semiconductor package, a wire bonding method using a bonding wire is widely adopted as a method for electrically connecting a semiconductor chip and a substrate.

  As a method of die-bonding another semiconductor chip on the semiconductor chip mounted on the substrate, a sufficient distance between the other semiconductor chip and the semiconductor chip electrically connected by the bonding wire is used. A technique is disclosed in which a sufficient amount of die bond resin is applied, a fixing adhesive layer made of the die bond resin is formed, and the other semiconductor chips are stacked (for example, Patent Document 1).

JP 2001-308262 A

  However, since it is difficult to adjust the application amount and position of the die bond resin in the above technique, the inventors of the present application achieved more efficient die bonding by using a die bond film made of a die bond resin. I'm trying to do it.

  Under such circumstances, since the pitch of bonding wires (hereinafter also simply referred to as “wires”) has been reduced in accordance with miniaturization and high integration of semiconductor devices, good wires to die bond films Embeddability is required. If the embeddability is insufficient, voids are generated around the wire, and in some cases, defects such as package cracks may occur due to the generated voids. In addition, since wire thinning is progressing in accordance with narrowing of the wire pitch, the wire may be deformed during embedding with a die bond film. When the deformed wire comes into contact with another wire, a semiconductor element, or the like, the reliability of the semiconductor device is lowered. Therefore, a characteristic that the wire shape after embedding can be easily confirmed is also required.

  The present invention has been made in view of the above-mentioned problems, and the object thereof is a thermosetting die-bonding film having good bonding wire embeddability and capable of confirming the state of the wire after embedding, and the thermosetting die-bonding film. It is providing the die-bonding film with a dicing sheet using, the manufacturing method of the semiconductor device using the said thermosetting type die-bonding film, and the semiconductor device which has the said thermosetting type die-bonding film.

  As a result of intensive studies, the present inventors have found that the above-described problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the present invention, before thermosetting,
The present invention relates to a thermosetting die-bonding film having a transmittance of 85% or more at a wavelength of 600 nm and a melt viscosity at 120 ° C. before thermosetting of 4000 Pa · s or less.

  In the thermosetting die-bonding film, the transmittance at a wavelength of 600 nm before thermosetting is 85% or more, and the transparency in the visible light region is enhanced, so that the wire can be easily embedded in the thermosetting die-bonding film. Can be confirmed. Thereby, the presence or absence of voids around the wire after embedding the wire in the thermosetting die-bonding film and the accuracy of confirmation of the wire shape can be increased, and a highly reliable semiconductor device can be manufactured.

  In addition, since the melt viscosity at 120 ° C. before thermosetting is 4000 Pa · s or less in the thermosetting die-bonding film, the thermosetting die-bonding film has sufficient flexibility at the time of die bonding and can improve the wire embedding property. As a result, generation of voids and deformation of the wire can be prevented.

  In the thermosetting die-bonding film, the transmittance at a wavelength of 400 nm before thermosetting is preferably 60% or more. As a result, transparency in the ultraviolet region can also be obtained, so that it is possible to check the embedded state in both the visible light region and the ultraviolet region, and the wire embedded state can be grasped more accurately.

  In the thermosetting die-bonding film, the transmittance at a wavelength of 600 nm after thermosetting at 150 ° C. for 1 hour is preferably 80% or more. Small voids that have not been confirmed before thermosetting may expand and become apparent due to heating for thermosetting. By increasing the transparency after thermosetting, it is possible to recognize voids that have become apparent after thermosetting, and it is possible to manufacture a highly reliable semiconductor device.

  In the thermosetting die-bonding film, in one embodiment, the content of the inorganic filler having a particle size exceeding 300 μm is preferably 0.1% by weight or less. Moreover, in one Embodiment, it is preferable that an inorganic filler is included, the particle size of this inorganic filler is 100 micrometers or less, and content is 55 weight% or less. In any form, since the amount of coarse particles that can affect the transmittance of the thermosetting die-bonding film is reduced, it can contribute to the improvement of the transmittance of the thermosetting die-bonding film.

  The thermosetting die bond film preferably contains a thermoplastic resin. Thereby, moderate softness | flexibility can be provided to a thermosetting die-bonding film, and wire embedding property can be improved more.

  The thermosetting die bond film is suitably used for bonding the second semiconductor chip while embedding the bonding wire on the first semiconductor chip electrically connected to the adherend by the bonding wire. .

  The present invention also includes a die bond film with a dicing sheet in which the thermosetting die bond film is laminated on a dicing sheet in which an adhesive layer is laminated on a base material. Thus, dicing of a wafer with a die bond film, pickup of a chip with a die bond film, and lamination of a second semiconductor chip while embedding wires can be performed in a series of steps while being held by a dicing sheet. Efficiency can be increased.

In the present invention, a step A for preparing a first semiconductor chip electrically connected to an adherend by a bonding wire;
Step B for preparing a second semiconductor chip with a thermosetting die-bonding film, wherein the thermosetting die-bonding film is attached to the second semiconductor chip;
Laminating the second semiconductor chip with the thermosetting die bond film on the upper surface of the first semiconductor chip so that at least a part of the bonding wire is embedded in the thermosetting die bond film; A method for manufacturing a semiconductor device is also included.

  In the manufacturing method, since a thermosetting die-bonding film with good embedding is used, generation of voids during wire embedding can be suppressed, and even if voids are generated, the thermosetting die-bonding film Since the transparency is high, voids can be recognized and products with voids can be eliminated, and a highly reliable semiconductor device can be efficiently manufactured.

  The present invention also includes a semiconductor device having the thermosetting die bond film. Thereby, since the generation of voids is suppressed or products in which voids are generated in the manufacturing process are excluded, the reliability of the obtained semiconductor device can be improved.

It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing sheet which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing sheet which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. However, in some or all of the drawings, parts unnecessary for the description are omitted, and there are parts shown enlarged or reduced for easy explanation.

(Die bond film with dicing sheet)
A thermosetting die bond film (hereinafter also referred to as “die bond film”) and a die bond film with a dicing sheet according to an embodiment of the present invention will be described below. The die bond film which concerns on this embodiment can mention the thing of the state in which the dicing sheet is not bonded together in the die bond film with a dicing sheet demonstrated below. Therefore, hereinafter, a die bond film with a dicing sheet will be described, and the die bond film will be described therein. FIG. 1 is a schematic cross-sectional view showing a die bond film with a dicing sheet according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing another die-bonding film with a dicing sheet according to another embodiment of the present invention.

  As shown in FIG. 1, a die bond film 10 with a dicing sheet has a configuration in which a thermosetting die bond film 3 is laminated on a dicing sheet 11. The dicing sheet 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the base material 1, and the die bond film 3 is provided on the pressure-sensitive adhesive layer 2. Moreover, the structure which formed the die-bonding film 3 'only in the workpiece | work affixing part may be sufficient as this invention like the die-bonding film 12 with a dicing sheet shown in FIG.

  The base material 1 has ultraviolet transparency and serves as a strength matrix for the die bond films 10 and 12 with a dicing sheet. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.

  Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, so that the semiconductor chip Can be easily recovered.

  The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. The base material 1 can be used by appropriately selecting the same kind or different kinds, and a blend of several kinds can be used as necessary.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 2, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably about 200,000 to 3,000,000, and particularly preferably about 300,000 to 1,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. In general, about 5 parts by weight or less, further 0.1 to 5 parts by weight is preferably blended with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifiers and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 2 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and a portion 2a corresponding to the work pasting portion of the pressure-sensitive adhesive layer 2 shown in FIG. The difference in adhesive strength with the other part 2b can be provided by irradiating only with radiation.

  Further, by curing the radiation curable pressure-sensitive adhesive layer 2 in accordance with the die bond film 3 ′ shown in FIG. 2, the portion 2 a having a significantly reduced adhesive force can be easily formed. Since the die bond film 3 ′ is attached to the portion 2 a that has been cured and has reduced adhesive strength, the interface between the portion 2 a and the die bond film 3 ′ of the pressure-sensitive adhesive layer 2 has a property of being easily peeled off during pick-up. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 2b. In addition, you may perform irradiation of the radiation to an adhesive layer after dicing and before pick-up.

  As described above, in the pressure-sensitive adhesive layer 2 of the die-bonding film with a dicing sheet 10 shown in FIG. 1, the portion 2 b formed of the uncured radiation-curable pressure-sensitive adhesive adheres to the die-bonding film 3 and is retained when dicing. Power can be secured. In this way, the radiation curable pressure-sensitive adhesive can support the die bond film 3 for fixing a chip-like work (semiconductor chip or the like) to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the die-bonding film with a dicing sheet 11 shown in FIG. 2, the portion 2b can fix the wafer ring.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy in terms of molecular design to introduce the carbon-carbon double bond into the polymer side chain. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  The radiation curable pressure-sensitive adhesive layer 2 can contain a compound that is colored by irradiation with radiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation, only the irradiated portion can be colored. That is, the portion 2a corresponding to the workpiece pasting portion 3a shown in FIG. 1 can be colored. Accordingly, whether or not the pressure-sensitive adhesive layer 2 has been irradiated with radiation can be immediately determined by visual observation, the workpiece pasting portion 3a can be easily recognized, and workpieces can be easily pasted together. In addition, when detecting a semiconductor chip by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor chip is picked up.

  A compound that is colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation, but becomes colored by radiation irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various known color formers can be used in combination.

  Such a compound that is colored by irradiation with radiation may be once dissolved in an organic solvent or the like and then included in the radiation-curable adhesive, or may be finely powdered and included in the pressure-sensitive adhesive. The use ratio of this compound is 10% by weight or less in the pressure-sensitive adhesive layer 2, preferably 0.01 to 10% by weight, and more preferably 0.5 to 5% by weight. If the proportion of the compound exceeds 10% by weight, the radiation applied to the pressure-sensitive adhesive layer 2 will be absorbed too much by this compound, so that the portion 2a of the pressure-sensitive adhesive layer 2 will be insufficiently cured and will be sufficiently sticky. Power may not decrease. On the other hand, in order to sufficiently color, it is preferable that the ratio of the compound is 0.01% by weight or more.

  When the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 2 is radiated so that the pressure-sensitive adhesive strength of the portion 2a in the pressure-sensitive adhesive layer 2 is smaller than the pressure-sensitive adhesive strength of the other portion 2b. It may be irradiated.

  Examples of the method for forming the portion 2a on the pressure-sensitive adhesive layer 2 include a method in which after the radiation-curable pressure-sensitive adhesive layer 2 is formed on the support substrate 1, the portion 2a is partially irradiated with radiation to be cured. It is done. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to the portion 3b other than the workpiece pasting portion 3a is formed. Moreover, the method etc. of irradiating and hardening | curing an ultraviolet-ray spotly are mentioned. The radiation curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the support substrate 1. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 2 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, all or a part of at least one side of the support substrate 1 other than the part corresponding to the workpiece pasting part 3a is shielded from light. The portion 2a with reduced adhesive strength can be formed by irradiating with radiation after forming the radiation-curable pressure-sensitive adhesive layer 2 on the substrate and curing the portion corresponding to the workpiece pasting portion 3a. . As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the die-bonding film 10 with a dicing sheet of this invention can be manufactured efficiently.

  In addition, when curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 2 by some method. For example, a method of coating the surface of the pressure-sensitive adhesive layer 2 with a separator, a method of irradiating ultraviolet rays or the like in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

  The die bond films 3 and 3 ′ are bonded on the first semiconductor chip 16 (see FIG. 5) electrically connected to the adherend 6 (see FIG. 5) by the bonding wire 7 (see FIG. 5). Is used for bonding the second semiconductor chip 5 (see FIGS. 4 and 6).

  The transmittance of the die bond films 3 and 3 ′ at a wavelength of 600 nm before thermosetting is 85% or more. The transmittance is preferably 87% or more, more preferably 90% or more. Since the transmittance at a wavelength of 600 nm before thermosetting is in the above range, the transparency in the visible light region of the die bond film is increased. This makes it easy to check the embedability of the wire in the thermosetting die-bonding film and increase the accuracy of checking the presence or absence of voids and the wire shape around the wire after embedding the wire in the thermosetting die-bonding film. And a highly reliable semiconductor device can be manufactured. Although the upper limit of the transmittance is preferably 100%, it may be 99% or less from the physical limit.

  The melt viscosity at 120 ° C. before thermosetting of the die bond films 3 and 3 ′ is 4000 Pa · s or less. The melt viscosity is preferably 3000 Pa · s or less, and more preferably 2000 Pa · s or less. Since the melt viscosity is in a predetermined range, it has sufficient flexibility at the time of die bonding, and the wire embedding property can be improved. As a result, generation of voids and deformation of the wire can be prevented. On the other hand, the lower limit of the melt viscosity is preferably 50 Pa · s or more, more preferably 100 Pa · s or more from the viewpoint of maintaining the film shape.

  In the die bond films 3, 3 ', the transmittance at a wavelength of 400 nm before thermosetting is preferably 60% or more, and more preferably 65% or more. As a result, not only transparency in the visible light region but also transparency in the ultraviolet region can be obtained, so it is possible to check the embedding state in both the visible light region and the ultraviolet region, and more accurately grasp the wire embedding state. be able to. In addition, although the upper limit of the transmittance at a wavelength of 400 nm before thermosetting is preferably 100%, it may be 99% or less from the physical limit.

  In the die bond films 3 and 3 ′, the transmittance at a wavelength of 600 nm after thermosetting at 150 ° C. for 1 hour is preferably 80% or more, and more preferably 85% or more. Small voids that have not been confirmed before thermosetting may expand and become apparent due to heating for thermosetting. By increasing the transparency after thermosetting, it is possible to recognize voids that have become apparent after thermosetting, and it is possible to manufacture a highly reliable semiconductor device. Although the upper limit of the transmittance after the thermosetting is preferably 100%, it may be 99% or less from the physical limit.

  The laminated structure of the die bond films 3 and 3 ′ is not particularly limited. For example, a single-layer adhesive layer, a multilayer structure in which a single-layer adhesive layer is laminated, or an adhesive on one or both sides of the core material The thing of the multilayered structure which formed the layer is mentioned. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned. When the die bond film has a multilayer structure, the entire die bond film having a multilayer structure may have a predetermined characteristic.

  The die bond films 3 and 3 ′ preferably include a thermoplastic resin from the viewpoint of imparting flexibility when embedding a wire. Moreover, it is preferable that a thermosetting resin is included as another resin component.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode the semiconductor chip is preferable. Moreover, a phenol resin is preferable as the curing agent for the epoxy resin.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive for die bonding. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF Type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., or bifunctional epoxy resin, or hydantoin type, trisglycidyl isocyan An epoxy resin such as a nurate type or a glycidylamine type is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.
Moreover, the said epoxy resin can be used in combination of 2 types, a solid thing at normal temperature, and a solid thing at normal temperature. By adding an epoxy resin that is liquid at room temperature to an epoxy resin that is solid at room temperature, the brittleness when a film is formed can be improved, and workability can be improved.

  Among these, from the viewpoint that the melt viscosity at 120 ° C. of the thermosetting die bond film can be lowered, among the epoxy resins, those having a softening point of 100 ° C. or less are preferable. In addition, the softening point of an epoxy resin can be measured by the ring and ball method prescribed | regulated to JISK7234-1986.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  Among these, from the viewpoint of reducing the melt viscosity at 120 ° C. of the thermosetting die-bonding film, among the phenol resins, those having a softening point of 100 ° C. or less are preferable. In addition, the softening point of a phenol resin can be measured by the ring and ball method prescribed | regulated to JISK6910-2007.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. . More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The content of the resin component (the total amount of the thermosetting resin and the thermoplastic resin) is preferably 7% by weight or more with respect to the entire die-bonding films 3, 3 '. The content of the resin component is preferably 25% by weight or less, more preferably 20% by weight or less, and still more preferably 15% by weight or less with respect to the entire die bond film 3, 3 '.

  As a compounding ratio of the thermosetting resin in the resin component (total amount of the thermosetting resin and the thermoplastic resin), the die-bonding films 3 and 3 ′ exhibit a function as a thermosetting type when heated under predetermined conditions. Although it will not specifically limit if it is a grade to perform, In order to make the melt viscosity in 120 degreeC low, it is preferable to exist in the range of 75 to 99 weight%, and it is more preferable to exist in the range of 85 to 98 weight%.

  Further, the blending ratio of the thermoplastic resin in the resin component is preferably in the range of 1 to 25% by weight, and in the range of 2 to 15% by weight in order to lower the melt viscosity at 120 ° C. It is more preferable.

  The die bond films 3, 3 'preferably include a curing accelerating catalyst. Thereby, thermal curing with a curing agent such as an epoxy resin and a phenol resin can be promoted. Although it does not specifically limit as a hardening acceleration | stimulation catalyst, For example, tetraphenylphosphonium tetraphenylborate (brand name; TPP-K), tetraphenylphosphonium tetra-p-triborate (brand name; TPP-MK), triphenylphosphine triphenylborane (Product name: TPP-S) and the like, and phosphorus-boron-based curing catalysts (all manufactured by Hokuko Chemical Co., Ltd.). Of these, tetraphenylphosphonium tetra-p-triborate is preferable because it has high potential at room temperature and is excellent in storage stability of a thermosetting resin.

  Although content of a hardening acceleration | stimulation catalyst can be set suitably, 0.1-8 weight part is preferable with respect to 100 weight part of thermosetting resins.

  When the die-bonding films 3, 3 ′ of the present invention are previously crosslinked to some extent, a polyfunctional compound that reacts with the functional group at the molecular chain end of the polymer is added as a crosslinking agent during production. Is good. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  In the die bond film, a filler such as an inorganic filler or an organic filler may be contained. From the viewpoints of handling property, adjustment of melt viscosity and imparting thixotropic properties, an inorganic filler is preferable.

  The inorganic filler is not particularly limited, for example, silica, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, antimony trioxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, Examples thereof include aluminum oxide, aluminum nitride, aluminum borate, boron nitride, crystalline silica, and amorphous silica. These can be used alone or in combination of two or more. Further, silica is preferable from the viewpoint of balance with the adhesiveness of the die bond film 10. Examples of the organic filler include polyimide, polyamideimide, polyetheretherketone, polyetherimide, polyesterimide, nylon, and silicone. These can be used alone or in combination of two or more.

  The average particle size of the filler is preferably 10 to 300 nm, and more preferably 50 to 200 nm. When the average particle size of the filler is not less than the above lower limit, the aggregation of the filler can be suppressed and the decrease in the transmittance can be prevented. On the other hand, by making the average particle diameter equal to or less than the above upper limit, the transmittance of the die bond film can be improved, and the reinforcing effect on the die bond film by the addition of the filler can be enhanced, and the heat resistance can be improved. Note that fillers having different average particle diameters may be used in combination. Moreover, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution meter (The product made from HORIBA, apparatus name; LA-910).

  The filler content may be 0 part by weight or more and 60 parts by weight or less with respect to a total of 100 parts by weight of the epoxy resin, the phenol resin, and the acrylic resin, from the viewpoint of the transmittance, adhesiveness, and wire embedding property of the die bond film. Preferably, it is 0 to 40 parts by weight.

  In particular, when the die bond films 3 and 3 ′ include a filler, the content of the inorganic filler having a particle size exceeding 300 μm is preferably 0.1% by weight or less, and more preferably 0.01% by weight or less. The particle size of the inorganic filler is preferably 100 μm or less. When the particle size of the inorganic filler is 100 μm or less, the content of the inorganic filler is preferably 55% by weight or less, and more preferably 40% by weight or less. By making the inorganic filler of each particle size range in the above range, the amount of coarse particles that can affect the transmittance of the die bond film can be reduced, which contributes to the improvement of the transmittance of the thermosetting die bond film. Can do.

  The shape of the filler is not particularly limited, and for example, a spherical or ellipsoidal shape can be used.

  In addition to the said filler, other additives can be suitably mix | blended with the die-bonding films 3 and 3 'as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The thickness of the die bond films 3 and 3 ′ (total thickness in the case of a laminate) is 50 to 200 μm, preferably 50 to 120 μm, more preferably 60 from the viewpoint of the embedding property of the bonding wire 7 and the like. ˜100 μm.

  It is preferable that the die bond films 3 and 3 ′ of the die bond films 10 and 12 with the dicing sheet are protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond films 3 and 3 ′ until they are put into practical use. Further, the separator can be used as a support base material when transferring the die bond films 3 and 3 ′ to the pressure-sensitive adhesive layer 2. The separator is peeled off when the workpiece is stuck on the die bond films 3 and 3 ′ of the die bond films 10 and 12 with dicing sheets. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

The die-bonding films 10 and 12 with a dicing sheet concerning this Embodiment are produced as follows, for example.
First, the base material 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 1 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 2 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 2 may be formed. Then, the adhesive layer 2 is bonded together with the separator on the base material 1. Thereby, the dicing sheet 11 is produced.

The die bond films 3 and 3 ′ are produced, for example, as follows.
First, an adhesive composition that is a material for forming the die bond films 3 and 3 ′ is prepared. As described above, the adhesive composition contains a thermoplastic resin, a thermoplastic resin, thermally conductive particles, and other various additives as necessary. Usually, the adhesive composition is used in a solution state dissolved in a solvent or a dispersion state dispersed in a solvent (hereinafter, the solution state includes a dispersion state).

  Next, the adhesive composition solution is applied on the base separator to a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form an adhesive layer. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition solution on a separator and forming a coating film, you may dry an application film on the said drying conditions, and may form an adhesive bond layer. Then, an adhesive bond layer is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing sheet 11 and the adhesive layer, and the two are bonded together so that the adhesive layer and the pressure-sensitive adhesive layer become a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Next, the base material separator on the adhesive layer is peeled off, and the die bond films with dicing sheets 10 and 12 according to the present embodiment are obtained.

(Method for manufacturing semiconductor device)
The manufacturing method of the semiconductor device according to this embodiment is as follows:
Preparing a first semiconductor chip electrically connected to the adherend by a bonding wire;
A step B of preparing a second semiconductor chip with a thermosetting die-bonding film, wherein the thermosetting die-bonding film is attached to the second semiconductor chip;
Laminating the second semiconductor chip with the thermosetting die bond film on the upper surface of the first semiconductor chip so that at least a part of the bonding wire is embedded in the thermosetting die bond film; Including.

  In the method for manufacturing a semiconductor device according to the present embodiment, first, a die bond film with a dicing sheet is prepared (step of preparing a die bond film with a dicing sheet). The die bond films 10 and 12 with a dicing sheet are used as follows after appropriately separating the separator arbitrarily provided on the die bond films 3 and 3 ′. Below, the case where the die-bonding film 10 with a dicing sheet is used is demonstrated to an example, referring FIGS. 3-6. 3 to 6 are schematic cross-sectional views for explaining one method of manufacturing the semiconductor device according to this embodiment.

  First, as shown in FIG. 1, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the die bond film 3 in the die bond film 10 with a dicing sheet, and this is bonded and held (fixing step). This step is performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not specifically limited, For example, it is preferable to exist in the range of 40-90 degreeC.

  Next, as shown in FIG. 3, the semiconductor wafer 4 is diced (dicing step). Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. Although the method of dicing is not particularly limited, for example, the dicing is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called full cut for cutting up to the die bond film 10 with a dicing sheet can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Moreover, since the semiconductor wafer is bonded and fixed by the die bond film 10 with a dicing sheet, chip breakage and chip jump can be suppressed, and damage to the semiconductor wafer 4 can be suppressed.

  Next, as shown in FIG. 4, the semiconductor chip 5 with the die bond film 3 is picked up in order to peel the semiconductor chip adhered and fixed to the die bond film 10 with the dicing sheet (pickup step). The semiconductor chip 5 corresponds to the second semiconductor chip of the present invention. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 5 from the die bond film with dicing sheet 10 side with a needle and picking up the pushed semiconductor chip 5 with a pickup device, etc. can be mentioned.

  As pick-up conditions, the needle push-up speed is preferably 5 to 100 mm / sec, and more preferably 5 to 10 mm / sec in terms of preventing chipping.

  Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the die-bonding film 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, a well-known thing can be used as a light source used for ultraviolet irradiation. In addition, when the adhesive layer is preliminarily irradiated and cured and this cured adhesive layer and the die bond film are bonded together, the ultraviolet irradiation here is unnecessary.

  The process of preparing the die-bonding film with a dicing sheet, the bonding process, the dicing process, and the pickup process correspond to the process B of the present invention. In the present invention, step B is not limited to this example as long as a second semiconductor chip with a thermosetting die-bonding film is prepared.

  On the other hand, as shown in FIG. 5, a member 30 in which the semiconductor chip 16 is die-bonded on the adherend 6 via the die-bonding film 13 is prepared. The tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 16 are electrically connected (wire bonded) by a bonding wire 7. The semiconductor chip 16 corresponds to the first semiconductor chip of the present invention.

  The step of preparing the member 30 corresponds to the step A of the present invention. In the present invention, the process A is not limited to this example as long as the first semiconductor chip electrically connected to the adherend by the bonding wire is prepared.

  A conventionally known film can be used as the die bond film 13. Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform. The member 30 shown in FIG. 5 can be manufactured by a conventionally known method. For example, the die bonding is performed by pressure bonding. The conditions for die bonding are not particularly limited, and can be set as necessary. Specifically, for example, it can be performed within a die bonding temperature of 80 to 160 ° C., a bonding pressure of 5 N to 15 N, and a bonding time of 1 to 10 seconds. Moreover, the temperature at the time of performing the said wire bonding is 80-250 degreeC, Preferably it is performed within the range of 80-220 degreeC. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  Next, as shown in FIG. 6, the semiconductor chip 5 with the die bond film 3 is laminated on the upper surface of the semiconductor chip 16 so that a part of the bonding wire 7 is embedded in the die bond film 3 (step C). Thereby, the connection portion of the bonding wire 7 with the semiconductor chip 16 is embedded in the die bond film 3. As temperature at the time of this lamination | stacking, 80-200 degreeC is preferable and 100-150 degreeC is more preferable. In addition, the pressure at this time can be 0.05 MPa to 0.3 MPa, and the time can be 0.1 to 3 seconds. By setting the temperature at the time of lamination within the above range, the viscosity of the die bond film 3 can be set to a viscosity at which the bonding wire 7 can be suitably embedded.

  Next, since the die bond film 3 is a thermosetting type, the semiconductor chip 5 is bonded and fixed to the semiconductor chip 16 by heat curing to improve the heat resistance strength (thermosetting step). The heating temperature can be 80 to 200 ° C, preferably 100 to 175 ° C, more preferably 100 to 140 ° C. The heating time can be 0.1 to 24 hours, preferably 0.1 to 3 hours, more preferably 0.2 to 1 hour.

  The shear bond strength of the die-bonding film 3 after thermosetting is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, with respect to the semiconductor chip 16. When the shear bond strength of the die bond film 3 is at least 0.2 MPa or more, at the bonding surface between the die bond film 3 and the semiconductor chip 5 or the semiconductor chip 16 by the ultrasonic vibration or heating in the wire bonding process. No shear deformation occurs. That is, the semiconductor chip does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  Next, if necessary, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 with a bonding wire 17 is performed. (See FIG. 7). The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  Next, if necessary, a sealing step of sealing the semiconductor chip 5 and the semiconductor chip 16 with the sealing resin 8 is performed (see FIG. 7). This step is performed to protect the semiconductor chip 5, the semiconductor chip 16, and the bonding wire 7 mounted on the adherend 6. This step can be performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. In this sealing step, a method of embedding the semiconductor chip 5 in a sheet-like sealing sheet (see, for example, JP 2013-7028 A) can also be employed.

  Next, heating is performed as necessary to completely cure the insufficiently cured sealing resin 8 in the sealing process (post-curing process). Even when the die bond film 13 and the adhesive sheet 3 are not thermally cured in the sealing process, the die bond film 13 and the adhesive sheet 3 are thermally cured together with the curing of the sealing resin 8 in this process, thereby allowing the adhesive fixing. . Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours. Thus, the semiconductor device 50 can be obtained.

  In addition, the manufacturing method of the semiconductor device which concerns on this embodiment performs wire bonding, without passing through the thermosetting process by the heat processing of the die-bonding film 3 after the process C, Furthermore, the semiconductor chip 16 and the semiconductor chip 5 are sealed resin 8 may be used to cure (post-cure) the sealing resin 8. In this case, the shear adhesive force at the time of temporary fixing of the die bond film 3 (shear adhesive force after the step C) is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the semiconductor chip 16. It is. Even if the wire bonding step is performed without passing through the heating step, the die bond film 3 and the semiconductor are bonded by the ultrasonic vibration or heating in the step, when the shear bonding force at the time of temporary fixing of the die bond film 3 is at least 0.2 MPa. No shear deformation occurs on the bonding surface with the chip 5 or the semiconductor chip 16. That is, the semiconductor chip does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing. Temporary fixing means that the die-bonding film is cured (in a semi-cured state) to such an extent that the curing reaction of the thermosetting die-bonding film does not proceed completely so as not to hinder the subsequent steps. A state in which the semiconductor chip 5 is fixed. In addition, when performing wire bonding without passing through the thermosetting process by the heat processing of a die-bonding film, the said post-curing process is equivalent to the thermosetting process in this specification.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the gist of the present invention only to those unless otherwise specified. “Parts” means “parts by weight”.

[Examples 1 to 5 and Comparative Examples 1 to 3]
(Production of die bond film)
An acrylic resin, epoxy resin A, epoxy resin B, phenol resin, filler (silica), and thermosetting catalyst are dissolved in methyl ethyl ketone at a ratio shown in Table 1 to prepare an adhesive composition solution having a concentration of 40 to 50% by weight. did.

  The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes, whereby a thickness of 50 μm was obtained. A die bond film was prepared.

The details of the abbreviations and components in Table 1 below are as follows.
Acrylic resin: SG-70L manufactured by Nagase ChemteX Corporation (glass transition temperature: -13 ° C)
Epoxy resin A: KI-3000 manufactured by Tohto Kasei Co., Ltd.
Epoxy resin B: JER YL980 manufactured by Mitsubishi Chemical Corporation
Phenol resin: MEH-7851SS manufactured by Meiwa Kasei Co., Ltd.
Filler A: YA050C-MJI (silica, average particle diameter: 50 nm) manufactured by Admatechs Co., Ltd.
Filler B: SE-2050MC (silica, average particle size: 500 nm) manufactured by Admatechs Co., Ltd.
Thermosetting catalyst: Shikoku Kasei Co., Ltd. 2MA-OK

(Measurement of transmittance)
Parallel transmittance was measured with an integrating sphere, a measurement speed of 2000 nm / min, a spot diameter of 2 mmφ, and a measurement range of 190 to 800 nm using an ultraviolet-visible-near infrared spectrophotometer (manufactured by JASCO Corporation, V-670DS). The results are shown in Table 2.

(Measurement of melt viscosity at 120 ° C before thermosetting)
The melt viscosity at 120 ° C. before thermosetting was measured by a parallel plate method using a rheometer (manufactured by HAAKE, trade name: RS-1). Specifically, 0.1 g of a die bond film was charged into a plate heated to 120 ° C., and measurement was started. The average value after 240 seconds from the start of measurement was taken as the melt viscosity. The gap between the plates was 0.1 mm. The results are shown in Table 2.

(Embeddability evaluation)
A package was prepared by wire bonding on a 6 mm × 6 mm chip with a wire loop of 40 μm and a pad-to-pad distance of 100 μm. On the other hand, a 100 μm chip was bonded to the produced die bond film using a laminator under the conditions of 65 ° C., 5 mm / sec, 0.4 MPa, and diced to a size of 6 mm × 6 mm. The produced chip with die-bonding film was bonded on the prepared package with a die bonder device (SPA-300, manufactured by Shinkawa Co., Ltd.) under the conditions of 120 ° C., 1 kg, and 2 sec to produce a semiconductor device. The wire part was observed with an optical microscope (300 times), and the case where the observation visual field was good was evaluated as “◯”, and the case where it was not good was evaluated as “x”. The results are shown in Table 2.

(Measurement of SAT void area)
The presence or absence of voids in the semiconductor device produced by the procedure of “Evaluation of Embeddability” was observed using an ultrasonic imaging device (SAT) (manufactured by Hitachi Finetech, FS200II). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). The case where the area occupied by the void was 10% or less with respect to the surface area (36 mm ² ) of the die bond film was evaluated as “◯”, and the case where it exceeded 10% was evaluated as “X”.

  All the die bond films of the examples had good transmittance, and the melt viscosity at the time of wire embedding was also a sufficiently low value. Further, due to this, generation of voids around the wire was suppressed. On the other hand, in Comparative Example 1, although the generation of voids was suppressed, the transmittance was low, so voids could not be confirmed with an optical microscope. In Comparative Example 2, although the presence or absence of voids could be confirmed satisfactorily, the void area was 10% or more because the melt viscosity was high.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3, 3 'Die bond film (thermosetting type die bond film)
4 Semiconductor wafer 5 Semiconductor chip (second semiconductor chip)
16 Semiconductor chip (first semiconductor chip)
6 Substrate 7, 17 Bonding wire 8 Sealing resin 10, 12 Die bond film with dicing sheet 11 Dicing sheet 50 Semiconductor device

Claims (10)

Before thermosetting,
The transmittance at a wavelength of 600 nm is 85% or more ,
Ri der melt viscosity 4000 Pa · s or less at 120 ° C., and
A thermosetting die-bonding film having a thickness of 50 to 200 μm .   The thermosetting die-bonding film according to claim 1, wherein the transmittance at a wavelength of 400 nm before thermosetting is 60% or more.   The thermosetting die-bonding film according to claim 1 or 2, wherein the transmittance at a wavelength of 600 nm after thermosetting at 150 ° C for 1 hour is 80% or more.   The thermosetting die-bonding film according to any one of claims 1 to 3, wherein the content of the inorganic filler having a particle size of more than 300 µm is 0.1% by weight or less.   The thermosetting die-bonding film according to claim 1, comprising an inorganic filler, wherein the inorganic filler has a particle size of 100 μm or less and a content of 55% by weight or less.   The thermosetting die-bonding film according to any one of claims 1 to 5, comprising a thermoplastic resin.   7. The semiconductor device according to claim 1, wherein the second semiconductor chip is bonded to the first semiconductor chip electrically connected to the adherend with the bonding wire while the bonding wire is embedded. The thermosetting die-bonding film described in 1.   A die-bonding film with a dicing sheet, wherein the thermosetting die-bonding film according to claim 1 is laminated on a dicing sheet in which an adhesive layer is laminated on a substrate. Preparing a first semiconductor chip electrically connected to the adherend by a bonding wire;
Step B for preparing a second semiconductor chip with a thermosetting die bond film, wherein the thermosetting die bond film according to any one of claims 1 to 7 is attached to the second semiconductor chip;
Laminating the second semiconductor chip with the thermosetting die bond film on the upper surface of the first semiconductor chip so that at least a part of the bonding wire is embedded in the thermosetting die bond film; A method for manufacturing a semiconductor device. A semiconductor device comprising the thermosetting die-bonding film according to claim 1.