JP4991921B2 - Film for semiconductor device and semiconductor device - Google Patents

Abstract

Provided is a film for a semiconductor device, wherein an adhesive film with a dicing sheet, which is an adhesive film laminated on top of a dicing film, is laminated to a cover film at prescribed intervals. Said film for a semiconductor device is capable of suppressing the formation of transfer marks on the adhesive film, when the film for a semiconductor device is wound into a roll. The film for a semiconductor device of the present invention is a film for a semiconductor device wherein the adhesive film with a dicing sheet, which is the adhesive film laminated on top of the dicing film, is laminated to the cover film at prescribed intervals, and said film for a semiconductor device has a Ta/Tb ratio between the cover film thickness (Ta) and the dicing film thickness (Tb) of 0.07-2.5.

Description

  The present invention relates to a film for a semiconductor device and a semiconductor device manufactured using the film for a semiconductor device.

  Conventionally, silver paste is used for fixing a semiconductor chip to a lead frame or an electrode member in a manufacturing process of a semiconductor device. The fixing process is performed by applying a paste adhesive on a die pad or the like of the lead frame, mounting a semiconductor chip on the lead adhesive, and curing the paste adhesive layer.

  However, paste adhesives have large variations in coating amount, coating shape, etc. due to their viscosity behavior and deterioration. As a result, the thickness of the paste-like adhesive formed is not uniform, and the reliability of the fixing strength related to the semiconductor chip is poor. That is, when the application amount of the paste adhesive is insufficient, the bonding strength between the semiconductor chip and the electrode member is lowered, and the semiconductor chip is peeled off in the subsequent wire bonding process. On the other hand, when the application amount of the paste adhesive is too large, the paste adhesive is cast onto the semiconductor chip, resulting in poor characteristics, and the yield and reliability are lowered. Such a problem in the adhering process becomes particularly remarkable as the semiconductor chip becomes larger. Therefore, it is necessary to frequently control the amount of paste adhesive applied, which hinders workability and productivity.

  In this paste adhesive application step, there is a method in which the paste adhesive is separately applied to a lead frame or a formed chip. However, in this method, it is difficult to make the paste adhesive layer uniform, and a special apparatus and a long time are required for applying the paste adhesive. For this reason, a dicing film and an adhesive film with a dicing sheet for adhering and holding a semiconductor wafer in a dicing process and also providing an adhesive layer for chip fixation necessary for the mounting process have been proposed (for example, see Patent Document 1). ).

  This adhesive film with a dicing sheet is formed by providing an adhesive layer on a supporting substrate so that the adhesive layer can be peeled off, and is formed by dicing a semiconductor wafer while being held by the adhesive layer and then stretching the supporting substrate. The chip is peeled off together with the adhesive layer, and the chips are individually collected and fixed to an adherend such as a lead frame through the adhesive layer.

  Conventionally, an adhesive film with a dicing sheet has been manufactured by individually bonding a dicing film and an adhesive film, due to restrictions in the manufacturing process. For this reason, from the viewpoint of preventing the occurrence of slack, winding deviation, positional deviation, voids (bubbles), etc. in each film production process, the production is performed while applying tensile tension to each film during conveyance by a roll. .

  This type of adhesive film with a dicing sheet may be cured when placed in a high-temperature and high-humidity environment or stored for a long time under a load. As a result, the fluidity of the adhesive layer, the holding power against the semiconductor wafer, and the peelability after dicing are reduced. For this reason, the adhesive film with a dicing sheet is often transported while being stored in a frozen state at -30 to -10 ° C or a refrigerated state at -5 to 10 ° C, thereby enabling long-term storage of film characteristics. ing.

  The adhesive film with a dicing sheet described above is processed in advance into the shape of a semiconductor wafer to be attached (for example, a circular shape) in consideration of workability such as attachment to a semiconductor wafer and attachment to a ring frame during dicing. There are those that have been pre-cut.

  Such an adhesive film with a dicing sheet is obtained by laminating an adhesive film punched in a circular shape on a dicing film in which an adhesive layer is laminated on a substrate, and then dicing the dicing film into a circular shape corresponding to the ring frame. Manufactured by punching. Thereby, when dicing a semiconductor wafer, a ring frame can be affixed to the outer peripheral part of a dicing film, and an adhesive film with a dicing sheet can be fixed here now.

  The adhesive film with a dicing sheet that has been pre-cut is attached to a long cover film at a predetermined interval, and then wound into a roll, and is transported and stored as a film for manufacturing a semiconductor device.

JP-A-60-57642

  However, in the case of the film for a semiconductor device described above, the thickness of the portion where the adhesive film with a dicing sheet is laminated is thicker than the thickness of the portion where it is not laminated. Therefore, especially when the number of windings is increased or the tension at the time of winding is increased, the edge of another adhesive film with a dicing sheet is pressed against the adhesive film with another dicing sheet, and the trace is transferred. The smoothness of the adhesive film may be impaired. Such transfer marks are particularly prominent when the adhesive film is formed of a relatively soft resin, when the adhesive film is thick, and when the number of windings of the film for a semiconductor device is large. When an adhesive film having such transfer marks and having a smoothness defect is attached to a semiconductor wafer, voids (bubbles) are generated between the semiconductor wafer and the adhesive film. Such voids cause problems during the processing of semiconductor wafers, and may reduce the yield of manufactured semiconductor devices.

  Therefore, in order to suppress the generation of the transfer mark, a method of reducing the winding pressure of the film for a semiconductor device can be considered. However, in this method, winding deviation occurs, and there is a possibility that troubles may occur during actual use, for example, it becomes difficult to set the tape mounter.

  Moreover, in order to suppress generation | occurrence | production of the said transfer trace, it is possible to provide a buffer base material in the back surface side of an adhesive film. However, residual stress remains between the adhesive film and the buffer base material, so that both of them at the interface between the adhesive film and the buffer base material after transportation in the low temperature state and storage for a long time described above. There is a problem of causing peeling.

  The present invention has been made in view of the above-described problems, and an object thereof is a semiconductor device in which an adhesive film with a dicing sheet in which an adhesive film is laminated on a dicing film is laminated on a cover film at a predetermined interval. An object of the present invention is to provide a film for a semiconductor device capable of suppressing generation of a transfer mark on an adhesive film when the film is rolled up.

  The inventors of the present application have studied a film for a semiconductor device in order to solve the conventional problems. As a result, it was found that by controlling the thickness of the cover film and the thickness of the dicing film constituting the film for semiconductor devices, it was possible to suppress the generation of transfer marks on the adhesive film, and the present invention was completed. I came to let you.

  That is, the film for a semiconductor device according to the present invention is a film for a semiconductor device in which an adhesive film with a dicing sheet in which an adhesive film is laminated on a dicing film is laminated on a cover film at a predetermined interval, When the thickness of the film is Ta and the thickness of the dicing film is Tb, Ta / Tb is in the range of 0.07 to 2.5.

  For example, if the thickness Ta of the cover film is constant, the Ta / Tb becomes thicker as the value is smaller. According to the said structure, since said Ta / Tb is 0.07 or more, the level | step difference of the part where the dicing film is laminated | stacked and the part which is not laminated | stacked is below fixed. Therefore, generation of transfer marks can be suppressed. Moreover, since the Ta / Tb is 0.07 or more and the thickness of the dicing film is thicker than that of the cover film, stress can be absorbed by the thickness of the cover film, and generation of transfer marks can be suppressed. it can. Further, since the Ta / Tb is 0.07 or more and the thickness of the dicing film is thicker than that of the cover film, the adhesive film with the dicing sheet and the cover film having the dicing film are bonded to the semiconductor wafer. Can be suitably peeled off. For example, when the thickness Tb of the dicing film is constant, the Ta / Tb becomes thinner as the value is smaller. Since the Ta / Tb is 2.5 or less, the thickness of the cover film is a certain value or less. Therefore, the followability to the level difference between the portion where the dicing film is laminated and the portion where the dicing film is not laminated is good. Further, since the Ta / Tb is 2.5 or less and the thickness of the cover film is not more than a certain value, the pressure when laminating the adhesive film with a dicing sheet on the cover film can be made uniform. Mixing can be prevented. Thus, according to the said structure, when winding the film for semiconductor devices in which the adhesive film and the cover film were laminated | stacked sequentially on the dicing film in roll shape, it suppresses that a transfer trace generate | occur | produces in an adhesive film. It becomes possible.

In the above configuration, the peel force F ₁ between the adhesive film and the cover film in a T-type peel test under conditions of a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min is 0.025 to 0.075 N / Within the range of 100 mm, the peeling force F ₂ between the adhesive film and the dicing film is within the range of 0.08 to 10 N / 100 mm, and the relationship between F ₁ and F ₂ is F ₁ <F ₂ . It is preferable to satisfy.

  A film for a semiconductor device is produced while applying tensile tension to a dicing film, an adhesive film, or a cover film from the viewpoint of preventing the occurrence of loosening, winding deviation, positional deviation, voids (bubbles), and the like. As a result, the film for a semiconductor device is manufactured in a state in which a tensile residual strain is present in any of the films constituting the film. This tensile residual strain causes shrinkage in each film, for example, when frozen at −30 to −10 ° C. or transported at a low temperature of −5 to 10 ° C. or stored for a long time. Furthermore, since each film has different physical properties, the degree of shrinkage also differs. For example, the dicing film has the largest degree of shrinkage among the films, and the cover film has the smallest degree of shrinkage. As a result, interfacial peeling occurs between the dicing film and the adhesive film, or the film floating phenomenon of the cover film occurs.

The arrangement, the peel force _{F 1} between the adhesive film and the cover film in the range of 0.025~0.075N / 100mm, and a release force _{F 2} between the adhesive film and the dicing film 0.08~10N / 100 mm and satisfying the relationship of F ₁ <F ₂ . As described above, since the dicing film has the largest shrinkage in each film, the peeling force F ₂ between the adhesive film and the dicing film is made larger than the peeling force F ₁ between the adhesive film and the cover film. It suppresses the shrinkage of the dicing film having the largest shrinkage rate, and prevents interface peeling between the dicing film and the adhesive film and the film floating phenomenon of the cover film. Furthermore, it is possible to prevent a part or all of the adhesive film from being transferred to the cover film.

  The said structure WHEREIN: It is preferable that thickness Ta of the said cover film is 10-100 micrometers.

  The said structure WHEREIN: It is preferable that thickness Tb of the said dicing film is 25-180 micrometers.

  A semiconductor device according to the present invention is manufactured using the film for a semiconductor device described above.

(A) is a top view which shows the outline of the film for semiconductor devices which concerns on this embodiment, (b) is the fragmentary sectional view. It is a fragmentary sectional view in the state where the film for semiconductor devices shown in Drawing 1 (a) and Drawing 1 (b) was rolled up. It is the schematic for demonstrating the manufacturing process of the film for semiconductor devices.

The film for a semiconductor device according to the present embodiment will be described below.
Fig.1 (a) is a top view which shows the outline of the film for semiconductor devices which concerns on this embodiment, FIG.1 (b) is the fragmentary sectional view. The film 10 for a semiconductor device has a configuration in which an adhesive film 1 with a dicing sheet is laminated on a cover film 2 at a predetermined interval. The dicing die-bonding film 1 has a structure in which an adhesive film 12 is laminated on a dicing film 11, and the dicing film 11 has a structure in which an adhesive layer 14 is laminated on a base material 13.

  FIG. 2 is a partial cross-sectional view of the semiconductor device film shown in FIGS. 1A and 1B wound in a roll shape. As shown in FIG. 2, in the film 10 for a semiconductor device wound in a roll shape, there is a step 19 between a portion where the adhesive film 1 with a dicing sheet is laminated and a portion 18 where the adhesive film 1 is not laminated. Moreover, the several adhesive film 1 with a dicing sheet on the cover film 2 is laminated | stacked, mutually shifting | deviating to a horizontal direction. Therefore, the edge of the other adhesive film 1 with a dicing sheet is pressed against one adhesive film 1 with a dicing sheet.

  In the film 10 for semiconductor devices, when the thickness of the cover film 2 is Ta and the thickness of the dicing film 11 is Tb, Ta / Tb is 0.07 to 2.5. The Ta / Tb is preferably 0.1 to 2, and more preferably 0.3 to 1.5. For example, if the thickness Ta of the cover film 22 is constant, the Ta / Tb becomes thicker as the dicing film 11 becomes smaller. According to the semiconductor device film 10, since the Ta / Tb is 0.07 or more, it is laminated with a portion where the dicing film 11 is laminated, that is, a portion where the adhesive film 1 with a dicing sheet is laminated. The step 19 with the not-shown portion 18 is below a certain level. Therefore, it can suppress that a transfer mark generate | occur | produces in the adhesive film 12 which comprises the adhesive film 1 with a dicing sheet. In addition, since the Ta / Tb is 0.07 or more and the thickness of the dicing film 11 is larger than that of the cover film 2, the stress can be absorbed by the thickness of the cover film 2, and the generation of transfer marks is suppressed. can do. Further, since the Ta / Tb is 0.07 or more and the thickness of the dicing film is thicker than that of the cover film, the adhesive film with the dicing sheet and the cover film having the dicing film are bonded to the semiconductor wafer. Can be suitably peeled off. For example, when the thickness Tb of the dicing film 11 is constant, the Ta / Tb becomes thinner as the value is smaller. Further, since the Ta / Tb is 2.5 or less, the thickness of the cover film 2 is a certain value or less. Therefore, the followability to the level difference between the portion where the dicing film 11 is laminated and the portion where the dicing film 11 is not laminated is good. Moreover, since the Ta / Tb is 2.5 or less and the thickness of the cover film 2 is not more than a certain value, the pressure when laminating the adhesive film 1 with a dicing sheet on the cover film 2 can be made uniform. It is possible to prevent air bubbles from being mixed. As described above, according to the film 10 for a semiconductor device, it is possible to suppress generation of a transfer mark on the adhesive film 12 when the film is wound into a roll.

The peeling force F ₁ between the adhesive film 12 and the cover film 2 is smaller than the peeling force F ₂ between the adhesive film 12 and the dicing film 11. The film 10 for semiconductor devices is applied with tensile tension to the dicing film 11, the adhesive film 12, and the cover film 2 from the viewpoint of preventing the occurrence of loosening, winding deviation, positional deviation, voids (bubbles), etc. in the manufacturing process. Laminated and manufactured. Therefore, each film has a tensile residual strain. This tensile residual strain causes, for example, shrinkage of each film when it is transported in a frozen state of −30 to −10 ° C. or transported in a low temperature state of −5 to 10 ° C. or stored for a long time. For example, the dicing film has the largest degree of shrinkage and the cover film has the smallest degree of shrinkage. Here, in the film for a semiconductor device according to the present embodiment, the peeling forces F ₁ and F ₂ are in a relationship of F ₁ <F ₂ , whereby the interface between the films due to the difference in shrinkage between the films. Peeling and film floating phenomenon of the cover film 2 can be prevented. Furthermore, it is possible to prevent a part or all of the adhesive film 12 from being transferred to the cover film 2.

The peel force F ₁ between the adhesive film 12 and the cover film 2 is preferably in the range of 0.025 to 0.075 N / 100 mm, more preferably in the range of 0.03 to 0.06 N / 100 mm, and 0.035 to A range of 0.05 N / 100 mm is particularly preferable. When the peeling force _{F 1} is less than 0.025 N / 100 mm, for example -30 to-10 ° C. refrigeration, or was stored a long time or transported at low temperature state of -5～10 ° C., the adhesive film 12 and the cover The films 2 may shrink at different shrinkage rates, which may cause a film floating phenomenon of the cover film 2. In addition, wrinkles, winding deviations, and foreign matters may be generated during the transport of the semiconductor device film 10 or the like. Furthermore, a void (bubble) may be generated between the adhesive film 12 and the semiconductor wafer when the semiconductor wafer is mounted. Meanwhile, the peel force _{F 1} is larger than 0.075N / 100mm, since adhesion of the adhesive film 12 and the cover film 2 is too strong, when the peeling of the cover film 2 and its retracted, constituting the adhesive film 12 The adhesive (details will be described later) may be transferred to a part or the entire surface. Incidentally, the value of the peeling force F _1, when the adhesive film 12 is thermally curable is meant a peel force between the adhesive film 12 and the cover film 2 before thermal curing.

Further, the peeling force _{F 2} between the adhesive film 12 and the dicing film 11 is preferably in the range of 0.08~10N / 100mm, and more preferably in the range of 0.1~6N / 100mm, 0.15~0. A range of 4 N / 100 mm is particularly preferable. The peeling force _{F 2} is at 0.08 N / 100 mm or more, for example -30 to-10 ° C. refrigeration, or when stored long time or transported at low temperature state of -5～10 ° C., dicing film 11 and adhesive It is possible to prevent the films 12 from shrinking at different shrinkage rates, thereby causing interface peeling between the dicing film 11 and the adhesive film 12. Further, it is possible to prevent the generation of wrinkles, winding misalignment, mixing of foreign matters, and voids during the transport of the semiconductor device film 10 and the like. Furthermore, chip jumping and chipping can be prevented when dicing the semiconductor wafer. On the other hand, when the peel force F ₂ is less than 10 N / 100 mm, when the pickup of the semiconductor chip, peeling property be suitable between the adhesive film 12 and the adhesive layer 14, good pickup of the semiconductor chip can do. Moreover, it is possible to prevent the adhesive from adhering to the adhesive (details will be described later) constituting the adhesive layer 14 on the semiconductor chip with adhesive. The numerical range of the peeling force F ₂ is in pressure-sensitive adhesive layer in the dicing film 11 is ultraviolet curable and also encompasses a case where the predetermined curing degree by beforehand ultraviolet irradiation. Moreover, hardening of the adhesive layer by ultraviolet irradiation may be before bonding with the adhesive film 12, and may be after bonding.

Further, the peeling force _{F 3} is preferably in the range of 0.025 through 5n / 100 mm between the cover film 2 and the dicing film 11 (adhesive layer 14), more preferably in the range of 0.05~1N / 100mm, A range of 0.1 to 0.5 N / 100 mm is particularly preferable. When the peel force _{F 3} is 0.025 N / 100 mm or more, for example -30 to-10 ° C. refrigeration, or when stored long time or transported at low temperature state of -5～10 ° C., the dicing film 11 and the cover It is possible to prevent the film 2 from shrinking at different shrinkage rates, thereby causing the film floating phenomenon of the cover film 2. In addition, it is possible to prevent the occurrence of wrinkles, winding deviations, and foreign matters during the transport of the semiconductor device film 10 or the like. Meanwhile, since the peeling force F ₃ is less than 5N / 100 mm, to prevent the dicing film 11 and can prevent the adhesion of the cover film 2 is increased, it is impossible to Vero out in the step of peeling off the cover film Can do.

The values of the peeling forces F _{1 to} F ₃ are measured values in a T-type peeling test (JIS K6854-3) performed under the conditions of a temperature of 23 ± 2 ° C., a peeling speed of 300 mm / min, and a distance between chucks of 100 mm. As a tensile tester, a trade name “Autograph AGS-H” (manufactured by Shimadzu Corporation) was used.

  The base material 13 in the dicing film 11 serves as a strength matrix for the semiconductor device film 10 as well as the dicing film 11. Examples of the base material 13 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, and the like. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyl Rufuido, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like. In the case where the pressure-sensitive adhesive layer 14 is of an ultraviolet curable type, the substrate 13 is preferably one having ultraviolet transparency among those exemplified above.

  Moreover, as a material of the base material 13, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet imparted with heat shrinkability by stretching or the like, the adhesive area between the pressure-sensitive adhesive layer 14 and the adhesive film 12 is reduced by thermally shrinking the base material 13 after dicing, and the semiconductor chip can be recovered. Simplification can be achieved.

  The surface of the substrate 13 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 13, the same kind or different kinds can be appropriately selected and used, and a blend of several kinds can be used as necessary. Further, in order to impart antistatic ability to the base material 13, a conductive material vapor deposition layer having a thickness of about 30 to 500 mm made of metal, alloy, oxides thereof, or the like may be provided on the base material 13. it can. The substrate 13 may be a single layer or a multilayer of two or more types.

  The thickness of the base material 13 is preferably 10 to 170 μm in order to ensure film transportability and prevent the base material from tearing, tearing, or plastically deforming even when the supporting base material is expanded in the bonding process. More preferably, it is 50-150 micrometers, More preferably, it is 100-130 micrometers.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 14, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization, if necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 14 can be formed of an ultraviolet curable pressure-sensitive adhesive. The UV curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with ultraviolet rays, and by irradiating only the portion corresponding to the semiconductor wafer attachment portion of the pressure-sensitive adhesive layer 14 with UV irradiation. A difference in adhesive strength with other portions can be provided.

The tensile modulus at 23 ° C. after the pressure-sensitive adhesive layer 14 is cured with ultraviolet rays is preferably in the range of 1 to 170 MPa, and more preferably in the range of 5 to 100 MPa. By setting the tensile elastic modulus to 1 MPa or more, good pickup properties can be maintained. On the other hand, by setting the tensile elastic modulus to 170 MPa or less, it is possible to prevent the occurrence of chip jump during dicing. In addition, it is preferable that the said ultraviolet irradiation is performed by the ultraviolet irradiation integrated light quantity of 30-1000mJ / cm < ² >, for example. By making the UV irradiation cumulative light quantity 30 mJ / cm ² or more, the pressure-sensitive adhesive layer 14 can be cured without deficiency, and excessive adhesion with the adhesive film 12 can be prevented. As a result, a good pick-up property can be exhibited when picking up a semiconductor chip. Further, it is possible to prevent the adhesive of the adhesive layer 14 from adhering to the adhesive film 12 after picking up (so-called adhesive residue). On the other hand, by reducing the cumulative amount of UV irradiation to 1000 mJ / cm ² or less, the adhesive layer 14 is prevented from being extremely reduced in adhesive force, thereby being peeled from the adhesive film 12 and mounted. Prevents the semiconductor wafer from falling off. Further, it is possible to prevent the chip jump of the formed semiconductor chip from occurring during the dicing of the semiconductor wafer.

The value of the tensile elastic modulus of the pressure-sensitive adhesive layer is determined by the following measurement method. That is, a sample having a length of 30.0 mm, a width of 10.0 mm, and a cross-sectional area of 0.1 to 0.5 mm ² is cut out from the pressure-sensitive adhesive layer 14. The sample was subjected to a tensile test in the MD direction at a measurement temperature of 23 ° C., a distance between chucks of 20 mm, and a tensile speed of 50 mm / min, and the amount of change (mm) due to the extension of the sample was measured. As a result, in the obtained SS (Strain-Strength) curve, a tangent line is drawn at the initial rising portion, and the tensile strength when the tangent line corresponds to 100% elongation is divided by the cross-sectional area. The obtained value is used as the tensile elastic modulus of the pressure-sensitive adhesive layer.

  Here, the adhesive film 12 has a configuration that is formed only on the affixed portion according to the shape of the semiconductor wafer in plan view. Therefore, by curing the ultraviolet curable pressure-sensitive adhesive layer 14 in accordance with the shape of the adhesive film 12, the adhesive strength of the portion corresponding to the semiconductor wafer attachment portion can be easily reduced. Since the adhesive film 12 is affixed to the portion where the adhesive strength is reduced, the interface between the portion of the pressure-sensitive adhesive layer 14 and the adhesive film 12 has a property of being easily peeled off during pickup. On the other hand, the part which is not irradiated with ultraviolet rays has sufficient adhesive force.

  As described above, the portion where the pressure-sensitive adhesive layer 14 is formed of an uncured ultraviolet curable pressure-sensitive adhesive adheres to the adhesive film 12 and can secure a holding force when dicing. As described above, the ultraviolet curable pressure-sensitive adhesive can support the adhesive film 12 for fixing a chip-shaped semiconductor wafer (semiconductor chip or the like) to an adherend such as a substrate with a good balance of adhesion and peeling. When the adhesive film 12 is laminated only on the portion where the semiconductor wafer is attached, the wafer ring is fixed in a region where the adhesive film 12 is not laminated.

  As the ultraviolet curable pressure-sensitive adhesive, those having an ultraviolet curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the ultraviolet curable pressure-sensitive adhesive include an additive-type ultraviolet curable pressure-sensitive adhesive in which an ultraviolet curable monomer component or an oligomer component is blended with a general pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or the rubber-based pressure-sensitive adhesive. An agent can be illustrated.

  Examples of the UV curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the ultraviolet curable oligomer component include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight in the range of about 100 to 30000 are suitable. The blending amount of the ultraviolet curable monomer component and oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type UV-curable pressure-sensitive adhesive described above, the UV-curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer. Intrinsic ultraviolet curable pressure sensitive adhesives using Intrinsic UV curable adhesives do not need to contain oligomer components, which are low molecular weight components, or do not contain many, so they are stable without the oligomer components moving through the adhesive over time. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into an ultraviolet curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic ultraviolet curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the ultraviolet curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The UV-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The ultraviolet curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  The ultraviolet curable pressure-sensitive adhesive layer 14 may contain a compound that is colored by ultraviolet irradiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 14 by irradiation with ultraviolet rays, only the portion irradiated with ultraviolet rays can be colored. Thereby, it can be immediately determined by visual observation whether the adhesive layer 14 is irradiated with ultraviolet rays, the semiconductor wafer attachment portion can be easily recognized, and the semiconductor wafer can be easily attached. In addition, when detecting a semiconductor chip by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor chip is picked up.

  A compound that is colored by ultraviolet irradiation is a compound that is colorless or light-colored before ultraviolet irradiation, but becomes colored by ultraviolet irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various known color formers can be used in combination.

  Such a compound colored by ultraviolet irradiation may be once dissolved in an organic solvent or the like and then contained in the ultraviolet curable pressure sensitive adhesive, or may be finely powdered and contained in the pressure sensitive adhesive. The use ratio of this compound is 10% by weight or less in the pressure-sensitive adhesive layer 14, preferably 0.01 to 10% by weight, more preferably 0.5 to 5% by weight. If the ratio of the compound exceeds 10% by weight, the ultraviolet ray irradiated to the pressure-sensitive adhesive layer 14 is excessively absorbed by the compound, so that the portion of the pressure-sensitive adhesive layer 14 corresponding to the semiconductor wafer attachment portion is not cured. It may be sufficient and the adhesive strength may not be sufficiently reduced. On the other hand, in order to sufficiently color, it is preferable that the ratio of the compound is 0.01% by weight or more.

  Further, when the pressure-sensitive adhesive layer 14 is formed of an ultraviolet curable pressure-sensitive adhesive, all or a part of the base material 13 other than the part corresponding to the semiconductor wafer pasting part is shielded from light. It is possible to form the portion with reduced adhesive force by forming the ultraviolet curable pressure-sensitive adhesive layer 14 and then irradiating it with ultraviolet rays to cure the portion corresponding to the semiconductor wafer attachment portion. As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the film 10 for a semiconductor device of the present invention can be efficiently manufactured.

  In the case where curing inhibition occurs due to oxygen during ultraviolet irradiation, it is desirable to block oxygen (air) from the surface of the ultraviolet curable pressure-sensitive adhesive layer 14 by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 14 with a separator, a method of irradiating ultraviolet rays in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 14 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and further preferably 5 to 5 μm from the viewpoint of compatibility between chip chipping surface chipping prevention and adhesive film fixing and holding. 25 μm.

  The total thickness of the base material 13 and the pressure-sensitive adhesive layer 14, that is, the thickness Tb of the dicing film 11 is determined from the viewpoints of transportability, prevention of chip cut surface chipping, fixing and holding of the adhesive film, and pickup properties. To 25 to 180 μm, more preferably 50 to 150 μm, and still more preferably 100 to 130 μm.

  The adhesive film 12 is a layer having an adhesive function, and as a constituent material thereof, a thermoplastic resin and a thermosetting resin may be used in combination, or a thermoplastic resin may be used alone.

The tensile storage modulus at 23 ° C. before curing of the adhesive film 12 is preferably in the range of 50 to 5000 MPa, more preferably in the range of 300 to 4000 MPa, and 500 to 3000.
More preferably within the range of MPa. By setting the tensile storage modulus to 50 MPa or more, when dicing a semiconductor wafer, it is possible to prevent the adhesive that has been thermally melted by friction with the dicing blade from adhering to the semiconductor chip, thereby causing a pickup failure. . On the other hand, by setting the tensile storage elastic modulus to 5000 MPa or less, the adhesion to a mounted semiconductor wafer, a die-bonded substrate, or the like can be improved.

  The value of the tensile storage modulus is determined by the following measurement method. That is, the adhesive composition solution is applied onto a release liner that has been subjected to a mold release treatment and dried to form an adhesive film 12 having a thickness of 100 μm. The adhesive film 12 is measured for a tensile storage elastic modulus at 23 ° C. before the adhesive film 12 is cured using a viscoelasticity measuring device (Rheometrics: model: RSA-II). More specifically, the sample size is 30.0 × length 5.0 × thickness 0.1 mm, the measurement sample is set in a film tensile measurement jig, and the frequency is in the temperature range of −30 ° C. to 280 ° C. The measurement is performed under the conditions of 10.0 Hz, a strain of 0.025%, and a heating rate of 10 ° C./min.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor device is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, and 2-ethylhexyl. Group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, or dodecyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor chips is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. , Biphenyl type, naphthalene type, fluorene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  In the present embodiment, the adhesive film 12 containing an epoxy resin, a phenol resin, and an acrylic resin is particularly preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor chip can be ensured. In this case, the mixing ratio of the epoxy resin and the phenol resin is 10 to 200 parts by weight with respect to 100 parts by weight of the acrylic resin component.

  Since the adhesive film 12 according to the present embodiment is crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer may be added as a crosslinking agent during production. . Thereby, the adhesive property under high temperature is improved and heat resistance is improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  Moreover, an inorganic filler can be suitably mix | blended with the adhesive film 12 according to the use. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, silicon nitride and other ceramics, aluminum, copper, silver, gold, nickel, chromium, bell And various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbons. These can be used alone or in combination of two or more. Among these, silica, particularly a melting strength is preferably used. Moreover, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.01-80 micrometers.

  The blending amount of the inorganic filler is preferably set to 0 to 80 parts by weight and more preferably set to 0 to 70 parts by weight with respect to 100 parts by weight of the organic component.

  The adhesive film 12 can be appropriately mixed with other additives as necessary. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  Although the thickness of the adhesive film 12 is not specifically limited, For example, it is about 5-100 micrometers, Preferably it is about 5-70 micrometers.

  The film 10 for a semiconductor device can have an antistatic ability. As a result, it is possible to prevent the circuit from being broken due to the generation of static electricity during the bonding and peeling, and the resulting charging of the semiconductor wafer or the like. The antistatic ability is imparted by adding an antistatic agent or a conductive material to the base material 13, the pressure-sensitive adhesive layer 14 or the adhesive film 12, and providing a conductive layer made of a charge transfer complex or a metal film on the base material 13. Etc., etc. As these methods, a method in which impurity ions that may change the quality of the semiconductor wafer are less likely to be generated is preferable. As a conductive substance (conductive filler) blended for the purpose of imparting conductivity and improving thermal conductivity, spherical, needle-like, and flaky shapes such as silver, aluminum, gold, copper, nickel, and conductive alloys Examples thereof include metal powders, metal oxides such as alumina, amorphous carbon black, and graphite. However, it is preferable that the adhesive film 12 is non-conductive because it can be prevented from electrically leaking.

  The adhesive film 12 is protected by the cover film 2. The cover film 2 has a function as a protective material that protects the adhesive film 12 until it is put into practical use. The cover film 2 is peeled off when a semiconductor wafer is stuck on the adhesive film 12 of the adhesive film with a dicing sheet. As the cover film 2, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-type release agent, or a long-chain alkyl acrylate-type release agent can be used.

  The thickness Ta of the cover film 2 is preferably 10 to 100 μm, more preferably 15 to 75 μm, and further preferably 25 to 50 μm from the viewpoints of workability and transportability.

Next, the manufacturing method of the film 10 for semiconductor devices which concerns on this Embodiment is demonstrated below.
In the method for manufacturing the semiconductor device film 10 according to the present embodiment, the adhesive layer 14 is formed on the substrate 13 to form the dicing film 11, and the adhesive film 12 is formed on the substrate separator 22. A step, a step of punching the adhesive film 12 in accordance with the shape of the semiconductor wafer to be attached, a step of laminating the adhesive layer 14 of the dicing film 11 and the adhesive film 12 as a bonding surface, and a circular shape corresponding to the ring frame A step of punching the dicing film 11 on, a step of producing the adhesive film 1 with a dicing sheet by peeling the substrate separator 22 on the adhesive film 12, and a dicing sheet with a predetermined interval on the cover film 2 And a step of bonding the adhesive film 1 together.

  The manufacturing process of the dicing film 11 is performed as follows, for example. First, the base material 13 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 13 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary) to form a pressure-sensitive adhesive layer 14. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. Further, the drying conditions can be appropriately set according to the thickness and material of the coating film. Specifically, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on the 1st separator 21 and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 14 may be formed. Thereafter, the pressure-sensitive adhesive layer 14 is bonded to the base material 13 together with the first separator 21. Thereby, the dicing film 11 by which the adhesive layer 14 was protected by the 1st separator 21 is produced (refer Fig.3 (a)). The produced dicing film 11 may have a long form wound in a roll shape. In this case, it is preferable to wind the dicing film 11 while applying a tensile tension in the longitudinal direction or the width direction so that no slack, winding deviation, or positional deviation occurs. However, by applying a tensile tension, the dicing film 11 is wound into a roll shape with a residual tensile strain remaining. In addition, although the dicing film 11 may be extended | stretched when the said tension | tensile_strength is added at the time of winding of the dicing film 11, winding up does not aim at extending | stretching operation.

When the pressure-sensitive adhesive layer 14 is made of an ultraviolet-curing pressure-sensitive adhesive and is ultraviolet-cured in advance, it is formed as follows. That is, after an ultraviolet curable pressure-sensitive adhesive composition is applied onto the substrate 13 to form a coating film, the coating film is dried under a predetermined condition (heat-crosslinked as necessary) to form a pressure-sensitive adhesive layer. Form. The coating method, coating conditions, and drying conditions can be performed in the same manner as described above. Alternatively, an ultraviolet curable pressure-sensitive adhesive composition may be applied onto the first separator 21 to form a coating film, and then the coating film may be dried under the drying conditions to form a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer is transferred onto the substrate 13. Further, the adhesive layer is irradiated with ultraviolet rays under predetermined conditions. Although it does not specifically limit as irradiation conditions of an ultraviolet-ray, Usually, the inside of the range from which integrated light quantity will be 50-800 mJ / cm < ² > is preferable, and the inside which is 100-500 mJ / cm < ² > is more preferable. The cumulative amount of light by adjusting within the numerical range, it is possible to control the release force _{F 2} between the adhesive film 12 and the dicing film 11 in the range of 0.08~10N / 100mm. When the irradiation with ultraviolet rays is less than 30 mJ / cm ² , the pressure-sensitive adhesive layer 14 may be insufficiently cured, and the peeling force from the adhesive film 12 may be excessively increased. As a result, the adhesion with the die bond film is increased, resulting in a decrease in pick-up property. Further, adhesive residue may occur on the adhesive film after pickup. On the other hand, when the integrated light quantity exceeds 1000 mJ / cm ² , the peeling force from the adhesive film 12 may be too small. As a result, interface peeling may occur between the pressure-sensitive adhesive layer 14 and the adhesive film 12. As a result, chip skipping may occur during dicing of the semiconductor wafer. In addition, the base material 13 may be thermally damaged. Furthermore, the curing of the pressure-sensitive adhesive layer 14 proceeds excessively, the tensile elastic modulus becomes too large, and the expandability decreases. In addition, you may perform irradiation of an ultraviolet-ray after the bonding process with the below-mentioned adhesive film 12. FIG. In this case, the ultraviolet irradiation is preferably performed from the substrate 13 side.

  The production process of the adhesive film 12 is performed as follows. That is, an adhesive composition solution for forming the adhesive film 12 is applied on the base separator 22 so as to have a predetermined thickness, thereby forming a coating film. Thereafter, the coating film is dried under predetermined conditions to form the adhesive film 12. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. Further, the drying conditions can be appropriately set according to the thickness and material of the coating film. Specifically, for example, the drying is performed within a range of 70 to 160 ° C. and a drying time of 1 to 5 minutes. Moreover, after apply | coating an adhesive composition on the 2nd separator 23 and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive film 12 may be formed. Thereafter, the adhesive film 12 is bonded together with the second separator 23 on the substrate separator 22. Thereby, the laminated | multilayer film by which the adhesive film 12 and the 2nd separator 23 were laminated | stacked sequentially on the base-material separator 22 are produced (refer FIG.3 (b)). This laminated film may have a long form wound in a roll shape. In this case, it is preferable to wind the adhesive film 12 while applying a tensile tension in the longitudinal direction or the width direction so that the adhesive film 12 is not loosened, wound or misaligned.

  Next, the adhesive film 12 is punched in accordance with the shape of the semiconductor wafer to be attached, and is attached to the dicing film 11. Thereby, the adhesive film 1 with a dicing sheet is obtained. That is, the first separator 21 is peeled off from the dicing film 11 and the second separator 23 is peeled off from the punched adhesive film 12 so that the adhesive film 12 and the pressure-sensitive adhesive layer 14 are bonded to each other. Paste together (see FIG. 3C). At this time, pressure bonding is performed on at least one of the dicing film 11 and the adhesive film 12 while applying a tensile tension to the peripheral edge. Moreover, when the dicing film 11 is the long thing wound by roll shape, it is preferable to convey without applying tensile tension as much as possible with respect to the dicing film 11 in the longitudinal direction. This is to suppress the residual tensile strain of the film. However, from the viewpoint of preventing the dicing film 11 from generating slack, winding deviation, position deviation, void (bubble), etc., tensile tension may be applied within a range of 10 to 25N. Within this range, even if tensile residual strain remains in the dicing film 11, it is possible to prevent the occurrence of interface peeling between the dicing film 11 and the adhesive film 12.

The dicing film 11 and the adhesive film 12 can be bonded together by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, but is usually preferably 30 to 80 ° C, more preferably 30 to 60 ° C, and particularly preferably 30 to 50 ° C. Moreover, although a linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. By laminating the laminating temperature and / or the linear pressure within the numerical range for the adhesive film 12 in which the glass transition temperature of the organic component is within the range of −20 to 50 ° C., and bonding the dicing film 11 together. , it is possible to control the release force _{F 2} between the adhesive film 12 and the dicing film 11 in the range of 0.08~10N / 100mm. Here, for example, by increasing the lamination temperature in the range, it is possible to increase the peel force F ₂ between the dicing film 11 and the adhesive film 12. Also, by increasing the linear pressure within the range, it is possible to increase the peel force F _2.

  Next, the base material separator 22 on the adhesive film 12 is peeled off, and the cover film 2 is bonded while applying tensile tension. Subsequently, the dicing film 11 is punched out into a circular shape corresponding to the ring frame at a predetermined interval. Thereby, the film 10 for semiconductor devices by which the pre-cut adhesive film 1 with a dicing sheet was laminated | stacked on the cover film 2 at predetermined intervals is produced.

The bonding of the adhesive film 12 to the cover film 2 in the adhesive film with dicing sheet 1 is preferably performed by pressure bonding. At this time, the lamination temperature is not particularly limited, but is usually preferably 20 to 80 ° C, more preferably 20 to 60 ° C, and particularly preferably 20 to 50 ° C. Moreover, although a linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 0.2-10 kgf / cm is more preferable. For the adhesive film 12 in which the glass transition temperature of the organic component is within the range of −20 to 50 ° C., the laminating temperature and / or the linear pressure are adjusted within the numerical range, respectively, and bonded to the cover film 2. The peeling force F ₁ between the adhesive film 12 and the cover film 2 can be controlled within a range of 0.025 to 0.075 N / 100 mm. Here, for example, by increasing the laminating temperature within the above range, it is possible to increase the peeling force F ₁ between the adhesive film with dicing sheet 1 and the cover film 2. Also, by increasing the linear pressure within the range, it is possible to increase the peel force F _1. Moreover, it is preferable to convey with respect to the cover film 2, applying tension tension in the longitudinal direction as much as possible. This is for suppressing the tensile residual strain of the cover film 2. However, from the viewpoint of preventing the cover film 2 from generating slack, winding deviation, position deviation, void (bubble), etc., a tensile tension may be applied within a range of 10 to 25N. If it is in the said range, even if the tensile residual distortion remains in the cover film 2, it can prevent that the film floating phenomenon of the cover film 2 with respect to the adhesive film 1 with a dicing sheet generate | occur | produces.

  The first separator 21 bonded on the pressure-sensitive adhesive layer 14 of the dicing film 11, the substrate separator 22 of the adhesive film 12, and the second separator 23 bonded on the adhesive film 12 are not particularly limited. A conventionally known release-treated film can be used. The first separator 21 and the second separator 23 each have a function as a protective material. The substrate separator 22 has a function as a substrate when the adhesive film 12 is transferred onto the pressure-sensitive adhesive layer 14 of the dicing film 11. The material constituting each of these films is not particularly limited, and conventionally known materials can be employed. Specifically, for example, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper surface-coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used.

  The adhesive film of the present invention can be used as a die bond film or a flip chip type semiconductor back film. The flip chip type semiconductor back film is used for forming on the back surface of a semiconductor element (for example, a semiconductor chip) flip-chip connected to an adherend (for example, various substrates such as a lead frame and a circuit board). Is.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited. The term “parts” means parts by weight.

Example 1
<Production of dicing film>
In a reaction vessel equipped with a cooling pipe, a nitrogen introduction pipe, a thermometer, and a stirring device, 88.8 parts of 2-ethylhexyl acrylate (hereinafter referred to as “2EHA”), 2-hydroxyethyl acrylate (hereinafter referred to as “HEA”). 11.2 parts, 0.2 part of benzoyl peroxide and 65 parts of toluene were added and polymerized in a nitrogen stream at 61 ° C. for 6 hours to obtain an acrylic polymer A having a weight average molecular weight of 850,000. It was. The molar ratio of 2EHA to HEA was 100 mol to 20 mol. In addition, the weight average molecular weight was measured by GPC (gel permeation chromatography), and was a value calculated by polystyrene conversion.

  To this acrylic polymer A, 12 parts of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as “MOI”) (80 mol% with respect to HEA) was added, and an addition reaction treatment was performed at 50 ° C. for 48 hours in an air stream. An acrylic polymer A ′ was obtained.

  Next, with respect to 100 parts of the acrylic polymer A ′, 8 parts of an isocyanate-based crosslinking agent (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 651”, Ciba 5 parts (made by Specialty Chemicals) was added to prepare an adhesive solution.

  The pressure-sensitive adhesive solution prepared above was applied on the surface of the PET release liner (first separator) that had been subjected to the silicone treatment, and heat-crosslinked at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 μm. Next, a polyolefin film (base material) having a thickness of 100 μm was bonded to the surface of the pressure-sensitive adhesive layer. Thereafter, it was stored at 50 ° C. for 24 hours.

  Further, the PET release liner was peeled off, and ultraviolet rays were directly irradiated only on the portion (circular shape with a diameter of 220 mm) corresponding to the adhesive layer of the semiconductor wafer (circular shape with a diameter of 200 mm). This produced the dicing film concerning a present Example. The irradiation conditions are as follows. Further, when the tensile elastic modulus of the pressure-sensitive adhesive layer was measured by a method described later, the tensile elastic modulus was 19.7 MPa.

<Ultraviolet irradiation conditions>
Ultraviolet (UV) irradiation device: high-pressure mercury lamp UV irradiation integrated light quantity: 500 mJ / cm ²
Output: 120W
Irradiation intensity: 200 mW / cm ²

<Preparation of adhesive film>
Acrylic acid ester-based polymer (manufactured by Negami Kogyo Co., Ltd., trade name; Paraclone W-197CM, Tg: 18 ° C.) 100 parts by weight based on an isocyanate-based crosslinking agent (Nippon Polyurethane) Co., Ltd., trade name: Coronate HX 2 parts, epoxy resin (JER Co., Ltd., Epicoat 1004) 50 parts, phenol resin (Mitsui Chemicals, trade name: Millex XLC-3L) 10 parts, As an inorganic filler, 30 parts of spherical silica (manufactured by Admatex Co., Ltd., trade name: SO-25R, average particle size 0.5 μm) was dissolved in methyl ethyl ketone to prepare a concentration of 18.0% by weight. In addition, it was 531 MPa when the tensile elasticity modulus of the adhesive film before thermosetting was measured by the method mentioned later.

  This adhesive composition solution is applied onto a release-treated film (base separator) with a fountain coater to form a coating layer, and hot air at 150 ° C. and 10 m / s is directly applied to the coating layer for 2 minutes. Sprayed and dried. Thus, an adhesive film having a thickness of 25 μm was produced on the release treatment film. As the release treatment film (base separator), a polyethylene terephthalate film (thickness 50 μm) subjected to silicone release treatment was used.

<Production of adhesive film with dicing sheet>
Next, the adhesive film was cut into a circular shape having a diameter of 230 mm, and the pressure-sensitive adhesive layer of the dicing film and the adhesive film cut into a circular shape were bonded together. A nip roll is used for the bonding, and the bonding conditions are a lamination temperature of 50 ° C. and a linear pressure of 3 kgf / cm. Further, the base separator on the adhesive film is peeled off to form a release treatment film (cover film). A release-treated polyethylene terephthalate film (thickness: 38 μm) was bonded. At this time, in order to prevent misalignment, voids (bubbles), etc. on the cover film, a linear pressure is applied without applying a lamination temperature while applying a tensile tension of 17 N in the MD direction using a dancer roll. Bonding was performed at 2 kgf / cm to prepare an adhesive film with a dicing sheet.

<Preparation of film for semiconductor device>
Furthermore, the film for a semiconductor device according to the present example in which 200 dicing sheet-attached adhesive films were bonded to each other by punching the dicing film into a circular shape having a diameter of 270 mm so that the adhesive film is at the center. Got.

(Example 2)
<Production of dicing film>
The dicing film according to this example was the same as that used in Example 1.

<Preparation of adhesive film>
Acrylic acid ester-based polymer (manufactured by Negami Kogyo Co., Ltd., trade name: Paraclone W-197C, Tg: 18 ° C.) 100 parts by weight based on an isocyanate-based crosslinking agent (Nippon Polyurethane) Co., Ltd., trade name: Coronate HX 4 parts, epoxy resin (JER Co., Ltd., Epicoat 1004) 30 parts, phenol resin (Mitsui Chemicals, trade name: Millex XLC-3L) 15 parts, As an inorganic filler, 60 parts of spherical silica (manufactured by Admatex Co., Ltd., trade name: SO-25R, average particle size 0.5 μm) was dissolved in methyl ethyl ketone to prepare a concentration of 18.0% by weight. In addition, it was 224 MPa when the tensile elasticity modulus of the adhesive film before thermosetting was measured by the method mentioned later.

<Preparation of film for semiconductor device>
The film for a semiconductor device according to Example 2 was obtained by bonding a polyethylene terephthalate film (thickness 38 μm) subjected to silicone release treatment in the same manner as Example 1 except that the adhesive film was used. A film was prepared.

(Example 3)
<Production of dicing film>
The dicing film according to this example is the above except that the thickness of the pressure-sensitive adhesive layer after drying is 5 μm, the thickness of the polyolefin film (base material) to be used is 40 μm, and the total thickness of the dicing film is 45 μm. A dicing film according to this example was produced in the same manner as in Example 1.

<Preparation of adhesive film>
The same adhesive film as in Example 1 was used as the adhesive film according to this example.

<Preparation of film for semiconductor device>
A film for a semiconductor device according to Example 3 was obtained by laminating a polyethylene terephthalate film (thickness: 100 μm) subjected to silicone release treatment in the same manner as in Example 1 except that the dicing film was used. A film was prepared.

Example 4
<Production of dicing film>
The dicing film according to this example is the above except that the thickness of the pressure-sensitive adhesive layer after drying is 10 μm, the thickness of the polyolefin film (base material) to be used is 150 μm, and the total thickness of the dicing film is 160 μm. A dicing film according to this example was produced in the same manner as in Example 1.

<Preparation of adhesive film>
The same adhesive film as in Example 1 was used as the adhesive film according to this example.

<Preparation of film for semiconductor device>
The film for a semiconductor device according to Example 4 was obtained by laminating a polyethylene terephthalate film (thickness: 12 μm) subjected to silicone release treatment in the same manner as in Example 1 except that the dicing film was used. A film was prepared.

(Example 5)
<Production of dicing film>
The dicing film according to this example is the above except that the thickness of the pressure-sensitive adhesive layer after drying is 5 μm, the thickness of the polyolefin film (base material) to be used is 75 μm, and the total thickness of the dicing film is 80 μm. A dicing film according to this example was produced in the same manner as in Example 1.

<Preparation of adhesive film>
The same adhesive film as in Example 1 was used as the adhesive film according to this example.

<Preparation of film for semiconductor device>
The film for a semiconductor device according to Example 5 was a polyethylene terephthalate that was subjected to silicone release treatment in the same manner as in Example 1 except that the dicing film was used, the lamination temperature was 50 ° C., and the linear pressure was 5 kg / cm. A film for manufacturing a semiconductor device was produced by laminating a film (thickness: 75 μm).

(Comparative Example 1)
<Production of dicing film>
The dicing film according to this comparative example is the above except that the thickness of the pressure-sensitive adhesive layer after drying is 50 μm, the thickness of the polyolefin film (base material) to be used is 150 μm, and the total thickness of the dicing film is 200 μm. A dicing film according to this comparative example was produced in the same manner as in Example 1.

<Preparation of film for semiconductor device>
The film for a semiconductor device according to Comparative Example 1 uses the dicing film, polyethylene terephthalate subjected to silicone release treatment in the same manner as in Example 1 except that the laminating temperature is set to 60 ° C. and the linear pressure is set to 5 kg / cm. A film for a semiconductor device was produced by laminating a film (thickness: 12 μm).

(Comparative Example 2)
<Production of dicing film>
The dicing film according to this comparative example was the above except that the thickness of the pressure-sensitive adhesive layer after drying was 15 μm, the thickness of the polyolefin film (base material) to be used was 40 μm, and the total thickness of the dicing film was 55 μm. A dicing film according to this comparative example was produced in the same manner as in Example 1.

<Preparation of film for semiconductor device>
The film for a semiconductor device according to Comparative Example 2 is a semiconductor device obtained by laminating a polyethylene terephthalate film (thickness 150 μm) subjected to silicone release treatment in the same manner as in Example 1 except that the dicing film is used. A film was prepared.

(Measurement of peel force)
The peel force between the adhesive film and the cover film, the peel force between the dicing film and the adhesive film, and the cover film and the dicing film (adhesive layer) in the film for a semiconductor device obtained in each example and comparative example. The peeling force was measured by a T-type peeling test (JIS K6854-3) under the conditions of a temperature of 23 ± 2 ° C., a relative humidity of 55 ± 5% Rh, and a peeling speed of 300 mm / min. As a tensile tester, a trade name “Autograph AGS-H” (manufactured by Shimadzu Corporation) was used.

(Tensile modulus of adhesive layer)
The value of the tensile elastic modulus of the pressure-sensitive adhesive layer is determined by the following measurement method. That is, a sample having a length of 30.0 mm, a width of 10.0 mm, and a cross-sectional area of 0.1 to 0.5 mm ² is cut out from the pressure-sensitive adhesive layer 14. The sample was subjected to a tensile test in the MD direction at a measurement temperature of 23 ° C., a distance between chucks of 20 mm, and a tensile speed of 50 mm / min, and the amount of change (mm) due to the extension of the sample was measured. As a result, in the obtained SS (Strain-Strength) curve, a tangent line is drawn at the initial rising portion, and the tensile strength when the tangent line corresponds to 100% elongation is divided by the cross-sectional area. The obtained value was taken as the tensile modulus of the adhesive layer.

(Tensile modulus of adhesive film before thermosetting)
The adhesive compositions in Examples and Comparative Examples were applied on a release liner subjected to a release treatment so as to have a thickness of 100 μm to obtain a dicing film. About this adhesive film, the tensile elasticity modulus in 23 degreeC was measured using the viscoelasticity measuring apparatus (Rheometrics company_made: type | formula: RSA-II). More specifically, the sample size is 30 mm long × 5 mm wide × 0.1 mm thick, the measurement sample is set in a film tension measuring jig, and the frequency is 10.0 Hz and the strain is 0 in the temperature range of −30 to 280 ° C. The measurement was performed under the conditions of 0.025% and a heating rate of 10 ° C./min.

(Existence of interface peeling and film floating)
Confirmation of film floating in the films for semiconductor devices obtained in the respective Examples and Comparative Examples was performed as follows. That is, each film for a semiconductor device was left in a freezer at a temperature of −30 ± 2 ° C. for 120 hours. Further, it was left for 24 hours in an environment of a temperature of 23 ± 2 ° C. and a relative humidity of 55 ± 5% Rh. Then, the presence or absence of the interface peeling between each film and the film floating in the film for semiconductor devices was confirmed. As the evaluation criteria, a case where no interfacial peeling or film lifting was visually observed was evaluated as ◯, and a case where it was observed was evaluated as ×.

(Presence / absence of void after mounting)
The presence or absence of voids in the film for a semiconductor device obtained in each example and comparative example was confirmed as follows. That is, the cover film was peeled off from each semiconductor device film, and the semiconductor wafer was mounted on the adhesive film. A semiconductor wafer having a size of 8 inches and a thickness of 75 μm was used. The mounting conditions of the semiconductor wafer were as follows.

<Bonding conditions>
Pasting device: ACC Co., Ltd., trade name: RM-300
Pasting speed meter: 50 mm / sec Pasting pressure: 0.2 MPa
Pasting temperature: 50 ° C

  Subsequently, the presence or absence of voids (bubbles) on the bonding surface of the adhesive film with a dicing sheet and the semiconductor wafer was confirmed with a microscope. The results are shown in Table 1 below.

(Evaluation of pickup)
The cover film was peeled off from each film for a semiconductor device, and a semiconductor wafer was mounted on the adhesive film. A semiconductor wafer having a size of 8 inches and a thickness of 75 μm was used. The semiconductor wafer mounting conditions were the same as described above.

  Next, the semiconductor wafer was diced according to the following conditions to form 30 semiconductor chips. Furthermore, the semiconductor chip was picked up together with the adhesive film. The pick-up was performed on 30 semiconductor chips (10 mm long × 10 mm wide), and the success rate was calculated by counting the cases where the semiconductor chip was successfully picked up without breakage. The results are shown in Table 1 below. In Comparative Example 1, the cover film and the adhesive film were not peeled off during the pasting with the mounter, and a transport error (cannot be printed) occurred several times. The pickup conditions are as follows.

<Dicing conditions>
Dicing method: Step cut Dicing device: DISCO DFD6361 (trade name, manufactured by DISCO Corporation)
Dicing speed: 30mm / sec
Dicing blade: Z1; “NBC-ZH203O-SE27HCD” manufactured by Disco Corporation
Z2: “NBC-ZH103O-SE27HCB” manufactured by Disco Corporation
Dicing blade rotation speed: Z1; 40,000 rpm, Z2; 45,000 rpm
Dicing tape cutting depth: 20μm
Wafer chip size: 10mm x 10mm

<Pickup conditions>
Pickup device: Trade name “SPA-300” manufactured by Shinkawa Co., Ltd. Number of needles: 9 Push-up amount: 300 μm
Push-up speed: 10 mm / sec.

<Evaluation of the presence or absence of voids by coil transfer after refrigerated storage for one month>
The film for a semiconductor device obtained in each Example and Comparative Example was wound into a roll shape with a winding tension of 2 kg. In this state, it was left in a refrigerator at a temperature of 5 ° C. for one month. Then, after returning to room temperature, the roll was unwound, the semiconductor wafer was mounted using the 100th dicing die-bonding film, and the presence or absence of the void was confirmed visually. A semiconductor wafer having a size of 8 inches and a thickness of 75 μm was used. The bonding conditions were the same as those for the void evaluation after mounting. The results are shown in Table 1.

In Table 1, the peel force F ₁ represents the peel force between the adhesive film with the dicing sheet and the cover film, the peel force F ₂ represents the peel force between the dicing film and the adhesive film, and the peel force F. ₃ represents the peeling force between the cover film and the dicing film (adhesive layer).

(result)
As is apparent from Table 1, no void was found in the films for semiconductor devices of Examples 1 to 5 immediately after mounting the semiconductor wafer. In addition, when the sample was wound and stored refrigerated for one month, no voids due to the trace transfer were confirmed. Moreover, the adhesive film with a dicing sheet and the cover film were able to be suitably peeled off (bonded out) during bonding to the semiconductor wafer by the mounter device. On the other hand, in the film for a semiconductor device of Comparative Example 1, voids were confirmed immediately after mounting the semiconductor wafer. In addition, when the sample was wound and stored refrigerated for one month, voids due to transfer of traces were confirmed. Moreover, the phenomenon of the film lift of the cover film was also confirmed. Further, when the semiconductor wafer was mounted, the cover film was not peeled off from the film for a semiconductor device and a transport error occurred several times. Further, chip skipping and chipping occurred during dicing of the semiconductor wafer. Further, in the film for a semiconductor device of Comparative Example 2, the pick-up property was good, but voids were confirmed immediately after mounting the semiconductor wafer. In addition, when the sample was wound and stored refrigerated for one month, voids due to transfer of traces were confirmed. Moreover, the phenomenon of the film lift of the cover film was also confirmed.

DESCRIPTION OF SYMBOLS 1 Adhesive film with a dicing sheet 2 Cover film 10 Film for semiconductor devices 11 Dicing film 12 Adhesive film 13 Base material 14 Adhesive layer 21 First separator 22 Base material separator 23 Second separator

Claims (3)

A film for a semiconductor device in which an adhesive film with a dicing sheet in which an adhesive film is laminated on a dicing film is laminated on a cover film at a predetermined interval,
When the thickness of the cover film is Ta and the thickness of the dicing film is Tb, Ta / Tb is in the range of 0.07 to 2.5,
In a T-type peel test under conditions of a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min, the peel force F ₁ between the adhesive film and the cover film is in the range of 0.025 to 0.075 N / 100 mm. There, peel force _{F 2} between the adhesive film the dicing film is in the range of 0.08~10N / 100mm, the _{F 1} and the _{F 2} will satisfy the relation of _F 1 _{<F 2} semi conductor arrangement for the film shall be the. The film for a semiconductor device according to claim 1, wherein a thickness Ta of the cover film is 10 to 100 μm. The thickness Tb of the dicing film, a semiconductor device for a film according to claim 1 or 2, characterized in that it is 25～180Myuemu.

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