CN103081068A - Film for semiconductor device and semiconductor device - Google Patents
Film for semiconductor device and semiconductor device Download PDFInfo
- Publication number
- CN103081068A CN103081068A CN2011800427942A CN201180042794A CN103081068A CN 103081068 A CN103081068 A CN 103081068A CN 2011800427942 A CN2011800427942 A CN 2011800427942A CN 201180042794 A CN201180042794 A CN 201180042794A CN 103081068 A CN103081068 A CN 103081068A
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- CN
- China
- Prior art keywords
- film
- adhesive
- cutting
- adhesive foil
- addition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 175
- 239000010408 film Substances 0.000 claims abstract description 272
- 239000013039 cover film Substances 0.000 claims abstract description 89
- 230000001070 adhesive effect Effects 0.000 claims description 315
- 239000000853 adhesive Substances 0.000 claims description 314
- 239000011888 foil Substances 0.000 claims description 178
- 238000005520 cutting process Methods 0.000 claims description 172
- 238000012360 testing method Methods 0.000 claims description 6
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 17
- 238000012546 transfer Methods 0.000 abstract description 2
- 239000002313 adhesive film Substances 0.000 abstract 5
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- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
Abstract
Provided is a film for a semiconductor device, wherein an adhesive film with a dicing sheet, which is an adhesive film laminated on top of a dicing film, is laminated to a cover film at prescribed intervals. Said film for a semiconductor device is capable of suppressing the formation of transfer marks on the adhesive film, when the film for a semiconductor device is wound into a roll. The film for a semiconductor device of the present invention is a film for a semiconductor device wherein the adhesive film with a dicing sheet, which is the adhesive film laminated on top of the dicing film, is laminated to the cover film at prescribed intervals, and said film for a semiconductor device has a Ta/Tb ratio between the cover film thickness (Ta) and the dicing film thickness (Tb) of 0.07-2.5.
Description
Technical field
The semiconductor device that the present invention relates to film for semiconductor apparatus and use this film for semiconductor apparatus to make.
Background technology
In the past, in the manufacture process of semiconductor device, fixedly using the silver slurry during semiconductor chip toward lead frame or electrode member.Described fixedly processing is at coating pulpous state adhesive such as the chip bonding pads of lead frame, carries semiconductor chip thereon and makes the pulpous state adhesive layer solidify to carry out.
But the slurry adhesive is because its viscosity behavior or deteriorated etc. and produce large deviation at aspects such as coating weight or coating shapes.As a result, the pulpous state adhesive of formation is in uneven thickness, so the constant intensity of semiconductor chip lacks reliability.That is, the constant intensity the when coating weight of pulpous state adhesive is not enough between semiconductor chip and the electrode member reduces, and semiconductor chip is peeled off in follow-up wire bond operation.Pulpous state adhesive curtain coating was to semiconductor chip and produce bad characteristic, rate of finished products and reliability decrease when on the other hand, the coating weight of pulpous state adhesive was too much.Problem in the fixedly processing like this follows the maximization of semiconductor chip to become remarkable especially.Therefore, need to carry out continually the control of the coating weight of pulpous state adhesive, thereby bring problem for workability or productivity ratio.
In the painting process of this pulpous state adhesive, have the pulpous state adhesive is applied to respectively method on the chip of lead frame and formation.But in the method, the pulpous state adhesive layer is difficult to homogenizing, and the coating of pulpous state adhesive needs special device and long-time in addition.Therefore, in cutting action gluing maintenance semiconductor chip and provide the required chip of installation procedure fixedly to stick with glue the adhesive foil (for example, referring to Patent Document 1) with cutting film, cutting blade of agent layer has been proposed.
Be somebody's turn to do in the adhesive foil with cutting blade, be provided with adhesive layer in strippable mode at support base material, after under the maintenance of this adhesive layer semiconductor chip being cut, stretching support base material and the chip that forms is peeled off with adhesive layer, it is reclaimed respectively, and be fixed on the adherends such as lead frame by this adhesive layer.
In the past, because the restriction in the manufacturing process is after making cutting film and adhesive foil respectively with the adhesive foil of cutting blade, both were pasted to make.Therefore, the viewpoint that produces lax or volume skew, position skew, space (bubble) etc. from prevent each film production process considers, carries out its making when when utilizing roller to carry each film being applied tensile stress.
This adhesive foil with cutting blade sometimes is placed under the environment of high temperature, high humidity or solidifies during long preservation under being applied with the state of load.As a result, cause adhesive layer fluidity or to the confining force of semiconductor wafer descend, fissility after the cutting descends.Therefore, transport when in most cases preserving with the frozen state under freezing under with-30～-10 ℃ of the adhesive foil of cutting blade or-5～10 ℃, thus can the long preservation film characteristics.
As the above-mentioned adhesive foil with cutting blade, when considering stickup on the semiconductor wafer, cutting toward encircling the workability of installing on the frame etc., be processed as in advance the shape (for example circular) of semiconductor wafer to be pasted, exist with the state of having implemented precut processing.
The adhesive foil with cutting blade like this by stamping-out is being pasted for circular adhesive foil after layers on substrates is folded on the cutting film that adhesive phase is arranged, is made cutting film stamping-out for the circle corresponding with the ring frame.Thus, when cutting semiconductor chip, the ring frame can be pasted the peripheral part of cutting film, thus fixing adhesive foil with cutting blade.
Carried out the adhesive foil with cutting blade of precut processing, stick on the cover film of long size with predetermined interval after, be wound as drum, transport and preserve as film for semiconductor apparatus.
The prior art document
Patent documentation
Patent documentation 1: Japanese kokai publication sho 60-57642 communique
Summary of the invention
But, in the situation that above-mentioned film for semiconductor apparatus, be laminated with the thickness of the not stacked part of the Thickness Ratio of the part of the adhesive foil of cutting blade thick.Therefore, when particularly the tension force when winding number increases or reels improves, one with the edge of the adhesive foil of cutting blade by being pressed in another with on the adhesive foil of cutting blade and transfer printing coiling vestige, thereby the sometimes flatness of adhesive foil forfeiture.Such transfer printing vestige, particularly when adhesive foil is formed by soft resin, when the thickness of adhesive foil is thick and the winding number of film for semiconductor apparatus significantly produce when many.And, have the adhesive foil that there is defective in such transfer printing vestige, flatness when being adhered on the semiconductor wafer, between semiconductor wafer and adhesive foil, produce space (bubble).Such space might add at semiconductor wafer and causes fault man-hour, thereby reduces the rate of finished products of the semiconductor device of making.
Therefore, in order to suppress the generation of above-mentioned transfer printing vestige, considered to weaken the method for the winding pressure of film for semiconductor apparatus.But the method might produce the skew of reeling, such as the fault that causes when being difficult to actual the use such as to settle toward adhesive tape mounter (テ ー プ マ ウ Application タ ー) is upper.
In addition, in order to suppress the generation of above-mentioned transfer printing vestige, consider in the rear side of sheet adhesive the buffering base material to be set.But residual between adhesive foil and buffering base material have residual stress, so after transporting under the aforesaid low-temperature condition or preserving for a long time, exist in the problem peeled off that at the interface produce both of adhesive foil with the buffering base material.
The present invention foundes in view of foregoing problems, its purpose is to provide a kind of film for semiconductor apparatus, obtain film for semiconductor apparatus what the cutting film was laminated with adhesive foil with the adhesive foil of cutting blade is stacked on the cover film with predetermined wall, can be suppressed at when this film for semiconductor apparatus is wound as drum and produce the transfer printing vestige on the adhesive foil.
The present inventor is studied film for semiconductor apparatus in order to solve aforementioned existing issue.Found that, consist of the thickness and the thickness that cuts film of the cover film of film for semiconductor apparatus by control, can be suppressed at and produce the transfer printing vestige on the adhesive foil, finished thus the present invention.
Namely, film for semiconductor apparatus of the present invention, be laminated with obtaining with the adhesive foil of cutting blade is stacked on the cover film with predetermined wall of adhesive foil at the cutting film, it is characterized in that, if when the thickness that the thickness of described cover film is Ta, establish described cutting film was Tb, Ta/Tb was in 0.07～2.5 scope.
For example at the thickness T a one of cover film regularly, less then to cut film thicker for the value of described Ta/Tb.According to described formation, described Ta/Tb is more than 0.07, and the discrepancy in elevation of the part that therefore is laminated with the cutting film and not stacked part is for below certain.Therefore, can suppress the generation of transfer printing vestige.In addition, described Ta/Tb is more than 0.07, and the Thickness Ratio cover film of cutting film is thick, and therefore the thickness by cover film can absorb stress, can suppress the generation of transfer printing vestige.In addition, described Ta/Tb is more than 0.07, and the Thickness Ratio cover film of cutting film is thick, therefore when pasting toward semiconductor wafer, adhesive foil and cover film with cutting blade with cutting film suitably can be peeled off (drawing).In addition, for example in the thickness T b of cutting film one timing, the less then cover film of the value of described Ta/Tb is thinner.Described Ta/Tb is below 2.5, thus the thickness of cover film be certain below.Therefore, the tracing ability to the discrepancy in elevation of the part that is laminated with the cutting film and not stacked part is good.In addition, described Ta/Tb is below 2.5, the thickness of cover film be certain below, therefore can make the pressure when being laminated to the adhesive foil with cutting blade on the cover film even, can prevent sneaking into of bubble.As seen, according to described formation, in the time will being wound as drum at the film for semiconductor apparatus that the cutting film stacks gradually adhesive foil and cover film, can being suppressed at and producing the transfer printing vestige on the adhesive foil.
In the described formation, preferably: in the T-shaped disbonded test under the condition of 23 ± 2 ℃ of temperature, peeling rate 300mm/ minute, peeling force F1 between described adhesive foil and described cover film is in the scope of 0.025～0.075N/100mm, peeling force F2 between described adhesive foil and described cutting film is in the scope of 0.08～10N/100mm, and described F1 and described F2 satisfy the relation of F1＜F2.
Film for semiconductor apparatus is considered from the viewpoint that prevents the lax or skew of reeling, position skew, space (bubble) etc., by making when cutting film, adhesive foil and cover film are applied tensile stress.As a result, film for semiconductor apparatus exists at any one film that consists of this film under the state of stretching residual strain and makes.This stretching residual strain when for example transporting or preserving for a long time, causes respectively contraction on each film under the low-temperature condition of-30～-10 ℃ freezing or-5～10 ℃.In addition, because the physical property of each film is different, the degree of therefore shrinking is also different.For example, in each film, the shrinkage degree of cutting film is maximum, and the shrinkage degree of cover film is minimum.As a result, cutting the perk phenomenon that produces interface peel between film and the adhesive foil or cause cover film.
Described constitute peeling force F1 between adhesive foil and cover film in the scope of 0.025～0.075N/100mm and the peeling force F2 between adhesive foil and cutting film in the scope of 0.08～10N/100mm, F1 and F2 satisfy the formation of the relation of F1＜F2.As previously mentioned, contraction about each film, the contraction of cutting film is maximum, therefore by making adhesive foil and cutting peeling force F2 between the film greater than the peeling force F1 between adhesive foil and the cover film, the contraction of the cutting film of shrinkage maximum be can suppress, interface peel between film and the adhesive foil or the film perk phenomenon of cover film prevented from cutting.Part or all that in addition, also can prevent adhesive foil is transferred on the cover film.
In the aforementioned formation, the thickness T a of described cover film is preferably 10～100 μ m.
In the aforementioned formation, the thickness T b of described cutting film is preferably 25～180 μ m.
In addition, semiconductor device of the present invention is the semiconductor device that uses aforesaid film for semiconductor apparatus to make.
Description of drawings
Fig. 1 (a) is the vertical view of summary of the film for semiconductor apparatus of expression present embodiment, (b) is its phantom.
Fig. 2 is wound as phantom under the state of drum with the film for semiconductor apparatus shown in Fig. 1 (a) and Fig. 1 (b).
Fig. 3 is the skeleton diagram for the manufacture process of explanation film for semiconductor apparatus.
Description of reference numerals
1 adhesive foil with cutting blade
2 cover films
10 film for semiconductor apparatus
11 cutting films
12 adhesive foils
13 base materials
14 adhesive phases
21 first partitions
22 base material partitions
23 second partitions
Embodiment
Below describe for the film for semiconductor apparatus of present embodiment.
Fig. 1 (a) is the vertical view of summary of the film for semiconductor apparatus of expression present embodiment, (b) is its phantom.Film for semiconductor apparatus 10 has with the adhesive foil 1 of cutting blade and is stacked in formation on the cover film 2 with predetermined wall.Dicing/die bonding film 1 has the structure that is laminated with adhesive foil 12 at cutting film 11, and cutting film 11 has the structure that is laminated with adhesive phase 14 at base material 13.
Fig. 2 is wound as phantom under the state of drum with the film for semiconductor apparatus shown in Fig. 1 (a) and Fig. 1 (b).As shown in Figure 2, be wound as in the film for semiconductor apparatus 10 of drum, between being laminated with the part of the adhesive foil 1 of cutting blade and not stacked part 18, have the discrepancy in elevation 19.In addition, a plurality of adhesive foils 1 with cutting blade on the cover film 2, stacked in the time of mutually along lateral alternate.Therefore, one with the edge of the adhesive foil 1 of cutting blade by being pressed on another adhesive foil 1 with cutting blade.
When the thickness that in the film for semiconductor apparatus 10, the thickness of establishing cover film 2 is Ta, establish cutting film 11 was Tb, Ta/Tb was 0.07～2.5.Described Ta/Tb is preferably 0.1～2, and more preferably 0.3～1.5.For example the thickness T a one of cover film 22 regularly, the value of described Ta/Tb is less, and then to cut the thickness of film 11 thicker.Therefore according to film for semiconductor apparatus 10, described Ta/Tb is more than 0.07, is laminated with the part of cutting film 11, namely is laminated with the part with the adhesive foil 1 of cutting blade, with the discrepancy in elevation 19 of not stacked part 18 be necessarily below.Therefore, can be suppressed at formation with producing the transfer printing vestige on the adhesive foil 12 of the adhesive foil 1 of cutting blade.In addition, described Ta/Tb is more than 0.07, and the Thickness Ratio cover film 2 of cutting film 11 is thick, and therefore the thickness by cover film 2 can absorb stress, can suppress the generation of transfer printing vestige.In addition, described Ta/Tb is more than 0.07, and the Thickness Ratio cover film of cutting film is thick, therefore when pasting toward semiconductor wafer, adhesive foil and cover film with cutting blade with cutting film suitably can be peeled off (drawing).In addition, for example at the thickness T b one of cutting film 11 regularly, the less then cover film of the value of described Ta/Tb 2 is thinner.Described Ta/Tb is below 2.5, thus the thickness of cover film 2 be certain below.Therefore, the tracing ability to the discrepancy in elevation of the part that is laminated with cutting film 11 and not stacked part is good.In addition, described Ta/Tb is below 2.5, the thickness of cover film 2 be certain below, therefore can make the pressure when being laminated to the adhesive foil 1 with cutting blade on the cover film 2 even, can prevent sneaking into of bubble.As seen, according to film for semiconductor apparatus 10, when being wound as drum, can being suppressed at and producing the transfer printing vestige on the adhesive foil 12.
Peeling force F1 between adhesive foil 12 and the cover film 2 is less than the peeling force F2 between adhesive foil 12 and the cutting film 11.Film for semiconductor apparatus 10, consider from the viewpoint that prevents from its manufacture process producing the lax or skew of reeling, position skew, space (bubble) etc., by when cutting film 11, adhesive foil 12 and cover film 2 are applied tensile stress, carrying out stacked the manufacturing.Therefore, there is the stretching residual strain in each film.This stretching residual strain when for example transporting or preserving for a long time, causes respectively contraction on each film under the low-temperature condition of-30～-10 ℃ freezing or-5～10 ℃.For example, the shrinkage degree of cutting film is maximum, and the shrinkage degree of cover film is minimum.At this, the film for semiconductor apparatus of present embodiment, described peeling force F1 and F2 satisfy the relation of F1＜F2, the interface peel between the film that therefore can prevent from producing owing to the difference of shrinking in each film or cause the film perk phenomenon of cover film 2.Part or all that in addition, can prevent adhesive foil 12 is transferred on the cover film 2.
Peeling force F1 between adhesive foil 12 and the cover film 2 is preferably in the scope of 0.025～0.075N/100mm, more preferably in the scope of 0.03～0.06N/100mm, in the scope particularly preferably in 0.035～0.05/100mm.When peeling force F1 is lower than 0.025N/100mm, when for example under-30～-10 ℃ freezing or-5～10 ℃ of low-temperature conditions, transporting or preserving for a long time, adhesive foil 12 shrinks with different shrinkages separately with cover film 2, sometimes produces thus the perk phenomenon of cover film 2.In addition, in the carrying of film for semiconductor apparatus 10 grades, sometimes produce wrinkle or the skew of reeling, foreign matter are sneaked into etc.In addition, when the installation of semiconductor wafer, sometimes between adhesive foil 12 and semiconductor wafer, produce space (bubble).On the other hand, peeling force F1 is during greater than 0.075N/100mm, adhesive foil 12 is excessively strong with the adhesiveness of cover film 2, therefore cover film 2 peel off or its when shrinking, sometimes will consist of part or all transfer printing of the adhesive (details is as described later) of adhesive foil 12.In addition, the value of described peeling force F1 is in the situation that adhesive foil 12 refers to adhesive foil 12 before the hot curing and the peeling force between the cover film 2 for heat curing-type.
In addition, the peeling force F2 between adhesive foil 12 and the cutting film 11 is preferably in the scope of 0.08～10N/100mm, more preferably in the scope of 0.1～6N/100mm, in the scope particularly preferably in 0.15～0.4N/100mm.Peeling force F2 is that 0.08N/100mm is when above, when for example under-30～-10 ℃ freezing or-5～10 ℃ of low-temperature conditions, transporting or preserving for a long time, can prevent from cutting film 11 and shrink with different shrinkages separately with adhesive foil 12, and between cutting film 11 and adhesive foil 12, produce interface peel thus.In addition, in the carrying of film for semiconductor apparatus 10 grades, can prevent wrinkle or the skew of reeling, foreign matter are sneaked into, space etc.In addition, when cutting semiconductor chip, can prevent that chip disperses or fragment.On the other hand, peeling force F2 is 10N/100mm when following, and when the picking up of semiconductor chip, the fissility between adhesive foil 12 and the adhesive phase 14 is suitable, well picking up semiconductor chip.Adhesive (details as described later) adhesive paste that in addition, can prevent from consisting of adhesive phase 14 is attached on the semiconductor chip with adhesive.In addition, the number range of described peeling force F2 comprises that the adhesive phase of cutting on the film 11 is ultraviolet hardening and the situation of to a certain degree solidifying by the ultraviolet ray irradiation in advance.In addition, shine the curing of the adhesive phase that carries out by ultraviolet ray, can before pasting with adhesive foil 12, carry out, also can after stickup, carry out.
In addition, cover film 2 and cutting film 11(adhesive phase 14) between peeling force F3 preferably in the scope of 0.025～5N/100mm, more preferably in the scope of 0.05～1N/100mm, in the scope particularly preferably in 0.1～0.5N/100mm.Peeling force F3 is that 0.025N/100mm is when above, when for example under-30～-10 ℃ freezing or-5～10 ℃ of low-temperature conditions, transporting or preserving for a long time, can prevent from cutting film 11 and shrink with different separately shrinkages with cover film 2, and produce thus the phenomenon of the film perk of cover film 2.In addition, in the carrying of film for semiconductor apparatus 10 grades, can prevent the generation that wrinkle or coiling skew, foreign matter are sneaked into.On the other hand, peeling force F3 is below the 5N/100mm, therefore can suppress to cut the adhesiveness enhancing of film 11 and cover film 2, can prevent from can not drawing in peeling off the operation of cover film.
The value of described peeling force F1～F3 is the measured value of the T-shaped disbonded test (JIS K6854-3) carried out under the condition of 23 ± 2 ℃ of temperature, peeling rate 300mm/ minute, chuck spacing 100mm.In addition, as cupping machine, commodity in use name “ オ ー ト グ ラ Off AGS-H " (Shimadzu Corporation's manufacturing).
The base material 13 of cutting in the film 11 be not only as the intensity parent of cutting film 11, and as the intensity parent of film for semiconductor apparatus 10.As base material 13, for example can enumerate: low density polyethylene (LDPE), linear polyethylene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, the polyolefin such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) copolymer, ethylene-butene copolymer, ethene-hexene copolymer, polyurethane, PETG, the polyester such as PEN, Merlon, polyimides, polyether-ether-ketone, Polyetherimide, polyamide, Wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamides (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulosic resin, polyorganosiloxane resin, metal (paper tinsel), paper etc.In addition, adhesive phase 14 is in the situation of ultraviolet hardening, as base material 13, has the material of ultraviolet (uv) transmission in the illustrative material in preferred front.
In addition, as the material of base material 13, can enumerate the polymer such as crosslinked of aforementioned resin.Described plastic film can not stretch and uses, and can carry out as required using after single shaft or the biaxial stretch-formed processing yet.The resin sheet of heat-shrinkable has been given in utilization by stretch processing etc., by make this base material 13 thermal contractions after cutting, can reduce the gluing area of adhesive phase 14 and adhesive foil 12, thereby can easily reclaim semiconductor chip.
In order to improve and the adhesiveness of adjoining course, retentivity etc., the surface treatment that the surface of base material 13 can implement to habitually practise, chemistry or the physical treatments such as for example, chromic acid processing, ozone exposure, fire exposure, high-voltage electric shock exposure, ionizing radiation processing, utilize the coating of silane coupling agent (for example adhesion substance described later) to process.
In order to ensure the carrying of film, produce the splitting of base material 13, broken hole, plastic deformation when preventing from engaging the expansion of support base material in the operation, the thickness of base material 13 is preferably 10～170 μ m, more preferably 50～150 μ m, further preferred 100～130 μ m.
The adhesive that uses in the formation of adhesive phase 14 is not particularly limited, such as using the general contact adhesives such as acrylic adhesives, rubber adhesive.As described contact adhesive, the viewpoint consideration of the ultra-pure water of the electronic unit that pollutes from the taboo such as semiconductor wafer or glass or the cleaning washing performance that alcohol waits organic solvent etc., the preferably acrylic adhesives take acrylic polymer as base polymer.
As described acrylic polymer, for example can enumerate: (for example use (methyl) alkyl acrylate, methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, the 2-Octyl Nitrite, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, the isodecyl ester, the hendecane ester, the dodecane ester, the tridecane ester, tetradecane ester, the hexadecane ester, the octadecane ester, the carbon number 1～30 of the alkyl such as eicosane ester, the straight or branched Arrcostab of carbon number 4～18 etc. particularly) and (methyl) acrylic acid cycloalkanes ester (for example, ring pentyl ester, cyclohexyl etc.) one or more are as acrylic polymer of monomer component etc.In addition, (methyl) acrylate represents acrylate and/or methacrylate, and (methyl) of the present invention all represents identical implication.
Described acrylic polymer in order to improve cohesiveness, thermal endurance etc., can contain and can be with other monomer component of described (methyl) alkyl acrylate or the copolymerization of cycloalkanes ester corresponding unit as required.As such monomer component, can enumerate such as: contain carboxylic monomer such as acrylic acid, methacrylic acid, (methyl) acrylic acid carboxylic ethyl ester, (methyl) acrylic acid carboxylic pentyl ester, itaconic acid, maleic acid, fumaric acid, crotonic acid etc.; Anhydride monomers such as maleic anhydride, itaconic anhydride etc.; The hydroxyl monomer is such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-4-hydroxyl butyl ester, (methyl) acrylic acid-own ester of 6-hydroxyl, (methyl) acrylic acid-8-hydroxyl monooctyl ester, (methyl) acrylic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid-12-hydroxyl lauryl, (methyl) acrylic acid (4-methylol cyclohexyl) methyl esters etc.; Contain sulfonic group monomer such as styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester, (methyl) acryloyl-oxy naphthalene sulfonic acids etc.; Phosphorous acidic group monomer such as acryloyl phosphoric acid-2-hydroxy methacrylate etc.; Acrylamide, acrylonitrile etc.These copolymerisable monomer compositions can use one or more.The use amount of these copolymerisable monomers is preferably below 40 % by weight of whole monomer components.
In addition, described acrylic polymer is in order to carry out the crosslinked polyfunctional monomer etc. that also can contain as required as the comonomer composition.As such polyfunctional monomer, can enumerate such as hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These polyfunctional monomers also can use one or more.The use amount of polyfunctional monomer is considered to be preferably below 30 % by weight of whole monomer components from viewpoints such as adhesion characteristics.
Described acrylic polymer can obtain by the polymerization of mixtures with single monomer or two or more monomers.Polymerization can be undertaken by any-modes such as polymerisation in solution, emulsion polymerisation, polymerisation in bulk, suspension polymerisations.From preventing the viewpoints such as the pollution consideration to clean adherend, the content of preferred low molecular weight substance is few.Consider from this point, the number-average molecular weight of acrylic polymer is preferably approximately more than 300,000, and more preferably from about 400,000～approximately 3,000,000.
In addition, in order to improve the number-average molecular weight of acrylic polymer as base polymer etc., also can suitably adopt outside crosslinking agent in the described adhesive.The concrete means of outside cross-linking method can be enumerated: add the so-called crosslinking agent such as polyisocyanate compound, epoxy compounds, aziridine cpd, melamine class crosslinking agent and make the method for its reaction.When using outside crosslinking agent, its use amount is according to suitably determining with the balance of the crosslinked base polymer of wish and as the use of adhesive.Generally speaking, preferably cooperate approximately below 5 weight portions with respect to described base polymer 100 weight portions, more preferably cooperate 0.1～5 weight portion.In addition, as required, in adhesive, except aforementioned composition, also can use the additives such as various tackifier, age resister.
With after described adhesive phase 14 ultraviolet curings in the stretch modulus under 23 ℃ preferably in the scope at 1～170MPa, more preferably in the scope of 5～100MPa.By described stretch modulus is set as more than the 1MPa, can keep good pick.On the other hand, by stretch modulus is set as below the 170MPa, produces chip in the time of can preventing from cutting and disperse.In addition, described ultraviolet irradiation is for example preferably with 30～1000mJ/cm
2Ultraviolet ray irradiation accumulated light carry out.Be 30mJ/cm by making ultraviolet ray irradiation accumulated light
2Above, adhesive phase 14 fully can be solidified, can prevent the excessive adhesion with adhesive foil 12.As a result, when the picking up of semiconductor chip, can show good pick.In addition, can prevent from picking up the adhesive attachment (so-called adhesive paste is residual) of rear adhesive phase 14 on adhesive foil 12.On the other hand, by being shone accumulated light, ultraviolet ray is set as 1000mJ/cm
2Below, can prevent that the extreme of the bonding force of adhesive phase 14 from descending, thereby can prevent thus and adhesive foil 12 between produce and peel off the semiconductor wafer of installing and produce and come off.In addition, during the cutting of semiconductor wafer, can prevent the generation that the chip of the semiconductor chip that forms disperses.
The value of the stretch modulus of described adhesive phase is measured by the following method.That is, adhesive phase 14 is cut into long 30.0mm, wide 10.0mm, sectional area 0.1～0.5mm
2Sample.This sample is carried out the tension test of MD direction measuring under the condition of 23 ℃ of temperature, chuck spacing 20mm, draw speed 50mm/ minute, measure the variable quantity (mm) of this sample elongation.Thus, in gained S-S(strain-intensity) in the curve, draw tangent line at initial rising part, be equivalent to 100% hot strength when extending divided by sectional area, with the stretch modulus of income value as adhesive phase with this tangent line.
At this, adhesive foil 12 only is formed on the formation of its adhesive portion for corresponding with the shape of overlooking of semiconductor wafer.Therefore, by the shape according to adhesive foil 12 ultraviolet-curing adhesive layer 14 is solidified, the bonding force of the part corresponding with the semiconductor wafer adhesive portion is descended.Because adhesive foil 12 sticks on the described part that bonding force descends, so the interface of the described part of adhesive phase 14 and adhesive foil 12 has the character of easily peeling off when picking up.On the other hand, the part of irradiation ultraviolet radiation does not have abundant bonding force.
As previously mentioned, the described part that is formed by uncured ultraviolet-curing adhesive in the described adhesive phase 14 is bonding with adhesive foil 12, the confining force in the time of can guaranteeing to cut.Like this, ultraviolet-curing adhesive can with good gluing-peel off balanced support and be used for shaped like chips semiconductor wafer (semiconductor chip etc.) is fixed to adhesive foil 12 on the adherend such as substrate.Only in the situation of the adhesive portion laminated stickiness film 12 of semiconductor wafer, at the not zone of laminated stickiness film 12, fixedly paster ring (wafer ring).
Ultraviolet-curing adhesive can use ultra-violet solidified functional groups such as having carbon-carbon double bond with being not particularly limited, and shows fusible ultraviolet-curing adhesive.As ultraviolet-curing adhesive, can illustration such as the addition type ultraviolet-curing adhesive that in the general contact adhesive such as described acrylic adhesives, rubber adhesive, is combined with ultra-violet solidified monomer component or oligomer composition.
As the ultra-violet solidified monomer component that is used for cooperating, can enumerate such as oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, ultraviolet curing oligomers composition can be enumerated the various oligomer such as carbamates, polyethers, polyesters, polycarbonate-based, polybutadiene, and its molecular weight is suitable in about 100～approximately 30000 scope.The use level of ultra-violet solidified monomer component or oligomer composition can suitably determine to reduce according to the kind of described adhesive phase the amount of the bonding force of adhesive phase.Generally speaking, with respect to the base polymers such as acrylic polymer 100 weight portions that consist of adhesive, for example be about 500 weight portions of 5 weight portions～approximately, preferred about 150 weight portions of 40 weight portions～approximately.
In addition, as ultraviolet-curing adhesive, except the addition type ultraviolet-curing adhesive that illustrates previously, can also enumerate and use in polymer lateral chain or main chain or interior at the type ultraviolet-curing adhesive as base polymer of polymer that the main chain end has a carbon-carbon double bond.The oligomer that inherent type ultraviolet-curing adhesive need not to contain or do not contain in a large number as low molecular weight compositions becomes to grade, therefore oligomer become to grade can not pass in time in adhesive mobile, can form the adhesive phase of stable layer structure, therefore preferred.
Described base polymer with carbon-carbon double bond can use to have carbon-carbon double bond and have fusible polymer with being not particularly limited.As such base polymer, preferably with the polymer of acrylic polymer as basic framework.As the basic framework of acrylic polymer, can enumerate the acrylic polymer that the front illustration is crossed.
The introducing method of carbon-carbon double bond is not particularly limited in the described acrylic polymer, can adopt the whole bag of tricks, but with carbon-carbon double bond introduce polymer lateral chain in MOLECULE DESIGN than being easier to.For example can enumerate: after will having in advance the monomer and acrylic polymer copolymerization of functional group, make to have the method that in the ultra-violet solidified situation that keeps carbon-carbon double bond, to carry out condensation or addition reaction with the compound of the functional group of this functional group reactions and carbon-carbon double bond.
As the combination of these functional groups example, can enumerate such as carboxyl and epoxy radicals, carboxyl and '-aziridino, hydroxyl and NCO etc.In the combination of these functional groups, consider the easiness that reaction is followed the trail of, the combination of preferred hydroxyl and NCO.In addition, if form described combination with acrylic polymer of carbon-carbon double bond by the combination of these functional groups, then functional group can be on any one of acrylic polymer and described compound, in described preferred compositions, preferred acrylic polymer has hydroxyl, described compound has the situation of NCO.At this moment, as the isocyanate compound with carbon-carbon double bond, for example can enumerate: methacryl isocyanates, 2-methylacryoyloxyethyl isocyanates, isopropenyl-α, alpha-alpha-dimethyl dibenzoyl isocyanates etc.In addition, as acrylic polymer, can use the copolymerization such as ether compound with the illustrative hydroxyl monomer in front or 2-hydroxyethyl vinyl ethers, 4-hydroxybutyl vinyl ethers, diethylene glycol mono vinyl ether and the polymer that obtains.
Described inherent type ultraviolet-curing adhesive can use separately described base polymer (particularly acrylic polymer) with carbon-carbon double bond, also can cooperate described ultra-violet solidified monomer component or oligomer composition in the scope of not damaging characteristic.Ultraviolet curing oligomers composition etc. with respect to base polymer 100 weight portions usually in the scope of 30 weight portions, the scope of preferred 0～10 weight portion.
Described ultraviolet-curing adhesive can contain Photoepolymerizationinitiater initiater by curing such as ultraviolet rays the time.As Photoepolymerizationinitiater initiater, for example can enumerate: α-ketols compound such as 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxycyclohexylphenylketone etc.; Acetophenone compounds such as methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenone, 2-methyl isophthalic acid-[4-(methyl mercapto) phenyl]-2-morpholinyl propane-1-ketone etc.; Benzoin ether compounds such as benzoin ethyl ether, benzoin iso-propylether, anisoin etc.; Ketal compounds such as dibenzoyl dimethyl ketal etc.; Aromatic sulfonyl compounds such as 2-naphthalene sulfonyl chloride etc.; Photolytic activity oxime compound such as 1-phenyl-1,2-propanedione-2-(O-ethoxy carbonyl) oxime etc.; Benzophenone compound such as benzophenone, benzoylbenzoic acid, 3,3 '-dimethyl-4-methoxy benzophenone etc.; Thioxanthones compounds such as thioxanthones, CTX, 2-methyl thioxanthones, 2,4-dimethyl thioxanthones, isopropyl thioxanthone, 2,4-two clopenthixal ketones, 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthones etc.; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate; Deng.The use level of Photoepolymerizationinitiater initiater is with respect to the base polymers such as acrylic polymer 100 weight portions that consist of adhesive, for example is about 20 weight portions of 0.05 weight portion～approximately.
In the described ultraviolet-curing adhesive layer 14, can contain as required the painted compound by the ultraviolet ray irradiation.By contain the painted compound by the ultraviolet ray irradiation in adhesive phase 14, the part that can only ultraviolet ray be shone is painted.Thus, can judge immediately whether adhesive phase 14 has carried out ultraviolet irradiation, easily identifies the semiconductor wafer adhesive portion, and the stickup of semiconductor wafer is also easy by naked eyes.In addition, when detecting semiconductor chip by optical sensor etc., its accuracy of detection improves, and does not produce misoperation when the picking up of semiconductor chip.
The painted compound by irradiation ultraviolet radiation, for colourless before irradiation ultraviolet radiation or light, but by the coloured compound of irradiation ultraviolet radiation.As the preferred concrete example of described compound, can enumerate leuco dye (ロ イ コ dyestuff).As leuco dye, can preferably use habitual triphenylmethane, Material of Fluoran, phenothiazines, auramine class, spiro-pyrans class leuco dye.Can enumerate particularly: 3-[N-(p-methylphenyl amino)]-7-anilino fluorane, 3-[N-(p-methylphenyl)-N-methylamino]-7-anilino fluorane, 3-[N-(p-methylphenyl)-N-ethylamino]-7-anilino fluorane, 3-lignocaine-6-methyl-7-anilino fluorane, crystal violet lactone, 4,4 '; 4 "-three (dimethylamino) triphenylcarbinol, 4,4 ', 4 " (dimethylamino) triphenyl methane etc.-three.
As the developer that preferably uses with these leuco dyes, can enumerate all the time the electron acceptors such as prepolymer, aromatic derivant carboxylate, atlapulgite of the phenolic resins that uses, in addition, when making tone variations, various colour formers can be used in combination.
Like this pass through irradiation ultraviolet radiation and painted compound, be included in again in the ultraviolet-curing adhesive after can being dissolved in first in organic solvent etc., in addition, also can be included in this adhesive with fine powder form.The usage ratio of this compound wishes in adhesive phase 14 to be below 10 % by weight, preferred 0.01～10 % by weight, more preferably 0.5～5 % by weight.When the ratio of this compound surpasses 10 % by weight, shine the ultraviolet ray of adhesive phase 14 by this compound taken in excess, therefore the curing of the part corresponding with the semiconductor wafer adhesive portion of described adhesive phase 14 is insufficient, and bonding force descends insufficient sometimes.On the other hand, for fully painted, preferably the ratio with this compound is set as more than 0.01 % by weight.
In addition, form by ultraviolet-curing adhesive in the situation of adhesive phase 14, can use the whole or local base material that carries out shading to the part beyond the part at least single face, corresponding with the semiconductor wafer adhesive portion of base material 13, and by behind this base material formation ultraviolet-curing adhesive layer 14, carrying out the ultraviolet ray irradiation, make corresponding with the semiconductor wafer adhesive portion partly solidified, thereby form the described part that bonding force descends.As light screening material, can make the material that can become photomask in support film by printing or evaporation etc.By described manufacture method, can effectively make film for semiconductor apparatus 10 of the present invention.
In addition, expectation utilizes any means from the surperficial isolating oxygen (air) of ultraviolet-curing adhesive layer 14 when solidifying obstacle because oxygen produces when irradiation ultraviolet ray.Can enumerate such as: carry out the method for ultraviolet ray irradiation etc. with the method for the surface coverage of adhesive phase 14 or in nitrogen atmosphere with partition.
The thickness of adhesive phase 14 is considered from the viewpoints such as fixedly maintenance of the damaged and adhesive foil of realizing simultaneously preventing the chip cutting face, is preferably approximately 1 μ m to about 50 μ m, more preferably 2 μ m～30 μ m, further preferred 5 μ m～25 μ m.
In addition, the total of the thickness of the thickness of base material 13 and adhesive phase 14, namely cut the thickness T b of film 11, from carrying property, prevent that the viewpoint, the viewpoint of pick of fixedly maintenance of the damaged and adhesive foil of chip cutting face from considering, be preferably 25～180 μ m, more preferably 50～150 μ m, further preferred 100～130 μ m.
The layer of adhesive foil 12 for having gluing function as its constituent material, can be used in combination thermoplastic resin and thermosetting resin, also can use separately thermoplastic resin.
Storage tensile modulus under front 23 ℃ of the curing of adhesive foil 12 is preferably in the scope of 50～5000MPa, and is more preferably in the scope of 300～4000MPa, further preferred in the scope of 500～3000MPa.By storage tensile modulus is set as more than the 50MPa, when the cutting of semiconductor wafer, can prevent because the adhesive of heat fusing is attached on the semiconductor chip with the friction of cutting edge, cause thus pick up bad.On the other hand, by storage tensile modulus is set as below the 5000MPa, can improves with semiconductor wafer to be installed or treat the adhesiveness of the substrate of chip join.
The value of described storage tensile modulus is the value that obtains by following assay method.That is, the solution of coating binder composition and dry on the release liner of having implemented demoulding processing, the adhesive foil 12 of formation thickness 100 μ m.Use determination of viscoelasticity device (Rheometric(レ オ メ ト リ ッ Network ス) company to make model: RSA-II), to measure the front storage tensile modulus under 23 ℃ of curing of this adhesive foil 12.More specifically, sample size is set as long 30.0mm * wide 5.0mm * thick 0.1mm, to measure sample and be arranged to film stretching and measure with on the anchor clamps, in-30 ℃～280 ℃ temperature range, under the condition of 10 ℃/minute of frequency 10.0Hz, strain 0.025%, programming rate, measure.
As described thermoplastic resin, can enumerate: the saturated polyester resins such as polyamide, phenoxy resin, acrylic resin, PET or PBT, polyamide-imide resin or the fluororesin etc. such as natural rubber, butyl rubber, isoprene rubber, neoprene, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, nylon 6 or nylon 66.These thermoplastic resins may be used singly or two or more in combination.In these thermoplastic resins, particularly preferably ionic impurity is few, thermal endurance is high, can guarantee the acrylic resin of the reliability of semiconductor element.
As described acrylic resin, be not particularly limited, can enumerate: have the acrylate of carbon number below 30, particularly the straight or branched alkyl of carbon number 4～18 or methacrylate as polymer of composition etc. take one or more.As described alkyl, can enumerate such as methyl, ethyl, propyl group, isopropyl, normal-butyl, the tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl, octadecyl or eicosyl etc.
In addition, other monomer as forming described polymer is not particularly limited, can enumerate such as: contain carboxylic monomer such as acrylic acid, methacrylic acid, acrylic acid carboxylic ethyl ester, acrylic acid carboxylic pentyl ester, itaconic acid, maleic acid, fumaric acid or crotonic acid etc.; Anhydride monomers such as maleic anhydride or itaconic anhydride etc.; The hydroxyl monomer is such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-4-hydroxyl butyl ester, (methyl) acrylic acid-own ester of 6-hydroxyl, (methyl) acrylic acid-8-hydroxyl monooctyl ester, (methyl) acrylic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid-12-hydroxyl lauryl or acrylic acid (4-methylol cyclohexyl) methyl esters etc.; Contain sulfonic group monomer such as styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acrylamido propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester or (methyl) acryloxy naphthalene sulfonic acids etc.; Perhaps phosphorous acidic group monomer such as acryloyl phosphoric acid-2-hydroxy methacrylate etc.
As described thermosetting resin, can enumerate: phenolic resins, amino resins, unsaturated polyester resin, epoxy resin, polyurethane resin, polyorganosiloxane resin or thermoset polyimide resin etc.These resins may be used singly or two or more in combination.Particularly preferably corrode the poor epoxy resin of the ionic impurity etc. of semiconductor element.In addition, preferred phenolic resins is as the curing agent of epoxy resin.
Described epoxy resin is so long as the epoxy resin that generally uses as adhesive compound, then be not particularly limited, can example such as bifunctional epoxy resin or polyfunctional epoxy resin or the epoxy resin such as hydantoins type, triglycidyl isocyanurate type or glycidyl group amine type such as bisphenol A-type, Bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol phenolic varnish type, orthoresol phenolic varnish type, three hydroxyphenyl methane types, four hydroxyphenyl ethane types.These epoxy resin may be used singly or two or more in combination.In these epoxy resin, particularly preferably phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, three hydroxyphenyl methane type resins or four hydroxyphenyl ethane type epoxy resin.Because these epoxy resin are with good as reactive high, the thermal endurance of the phenolic resins of curing agent etc.
In addition, described phenolic resins works as the curing agent of epoxy resin, can enumerate such as polycarboxylated styrenes such as the phenolic varnish type phenolic resins such as phenol novolac resin, phenol aralkyl resin, cresols novolac resin, tert-butyl phenol novolac resin, nonyl phenol novolac resin, resol type phenolic resins, poly(4-hydroxystyrene) etc.These phenolic resins may be used singly or two or more in combination.In these phenolic resins, particularly preferably phenol novolac resin, phenol aralkyl resin.Because can improve the connection reliability of semiconductor device.
The mixing ratio of described epoxy resin and phenolic resins, for example, with respect to epoxy radicals 1 equivalent in the described epoxy resin composition, the hydroxyl in the phenolic resins is that the ratio of 0.5～2.0 equivalent cooperates is suitable.More preferably 0.8～1.2 equivalent.That is, if both mixing ratios beyond described scope, then can not be carried out sufficient curing reaction, the characteristic of epoxy resin cured product is easily deteriorated.
In addition, in the present embodiment, particularly preferably contain the adhesive foil 12 of epoxy resin, phenolic resins and acrylic resin.These resin intermediate ion impurity are few, thermal endurance is high, it is hereby ensured the reliability of semiconductor chip.The proportioning of this moment is: with respect to acrylic resin composition 100 weight portions, the combined amount of epoxy resin and phenolic resins is 10～200 weight portions.
The adhesive foil 12 of present embodiment in order to carry out in advance to a certain degree crosslinked, can add polyfunctional compound with the reactions such as functional group of the molecule chain end of polymer as crosslinking agent when making.Thus, can improve the adhesive property under the high temperature, improve thermal endurance.
As described crosslinking agent, can adopt existing known crosslinking agent.Particularly more preferably toluene di-isocyanate(TDI), methyl diphenylene diisocyanate, PPDI, 1, the polyisocyanate compounds such as addition product of 5-naphthalene diisocyanate, polyalcohol and vulcabond.The addition of crosslinking agent is preferably set to 0.05～7 weight portion usually with respect to described polymer 100 weight portions.If the amount of crosslinking agent surpasses 7 weight portions, then adhesive tension descends, and is therefore not preferred.On the other hand, if be lower than 0.05 weight portion, then cohesiveness is not enough, and is therefore not preferred.In addition, as required, can together contain other polyfunctional compounds such as epoxy resin with such polyisocyanate compound.
In addition, in the adhesive foil 12, can suitably cooperate inorganic filler according to its purposes.The cooperation of inorganic filler can be given conductivity, be improved thermal conductivity, adjustable elastic modulus etc.As described inorganic filler, can enumerate such as the various inorganic powders that comprise the metals such as the ceramic-like such as silicon dioxide, clay, gypsum, calcium carbonate, barium sulfate, aluminium oxide, beryllium oxide, carborundum, silicon nitride, aluminium, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, scolder or alloy type and carbon etc.These inorganic fillers may be used singly or two or more in combination.Wherein, particularly preferably use fused silica.In addition, the average grain diameter of inorganic filler is preferably in the scope of 0.01～80 μ m.
The use level of described inorganic filler is preferably set to 0～80 weight portion with respect to organic principle 100 weight portions, more preferably is set as 0～70 weight portion.
In addition, in the adhesive foil 12, can suitably cooperate other additive as required.As other additive, can enumerate such as fire retardant, silane coupler or ion trap agent etc.As described fire retardant, can enumerate such as antimony trioxide, antimony pentaoxide, brominated epoxy resin etc.These fire retardants may be used singly or two or more in combination.As described silane coupler, for example can enumerate: β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxy propyl group methyldiethoxysilane etc.These compounds may be used singly or two or more in combination.As described ion trap agent, can enumerate such as hydrotalcite, bismuth hydroxide etc.These ion trap agent may be used singly or two or more in combination.
The thickness of adhesive foil 12 is not particularly limited, and for example, is the 100 μ m of about 5 μ m～approximately, the 70 μ m of preferred approximately 5 μ m～approximately.
Film for semiconductor apparatus 10 can have anti-static ability.Thus, in the time of can preventing that it is gluing and when peeling off etc. generation static and the charged circuit that destroys of the semiconductor wafer that causes owing to this static etc.Anti-static ability give can be by in base material 13, adhesive phase 14 or adhesive foil 12, adding antistatic agent or conductive material method, at base material 13 the suitable modes such as conductive layer that comprise charge transfer complex or metal film etc. are set and carry out.In these modes, preferably be difficult to produce the mode that might cause the rotten foreign ion of semiconductor wafer.In order to give conductivity, to improve thermal conductivity etc. and the conductive material (conductive filler) that cooperates, can enumerate metal oxide, amorphous carbon black, the graphite etc. such as sphere, aciculiform, laminar metal dust, aluminium oxide of silver, aluminium, gold, copper, nickel, electrical conductivity alloy etc.But described adhesive foil 12 is non-conductive, and this considers it is preferred from the viewpoint that can not produce electric leakage.
Consider from the viewpoint of workability, carrying property, the thickness T a of cover film 2 is preferably 10～100 μ m, more preferably 15～75 μ m, further preferred 25～50 μ m.
Below, the manufacture method of the film for semiconductor apparatus 10 of present embodiment is described.
The manufacture method of the film for semiconductor apparatus 10 of present embodiment comprises: form adhesive phase 14 and make the operation of cutting film 11 at base material 13, form the operation of adhesive foil 12 at base material partition 22, adhesive foil 12 is carried out the operation of stamping-out according to the shape of semiconductor wafer to be pasted, the adhesive phase 14 of cutting film 11 is carried out stacked operation with adhesive foil 12 as sticking veneer, be the operation of the circle corresponding with encircling frame with cutting film 11 stamping-outs, by the base material partition 22 on the adhesive foil 12 being peeled off the operation made from the adhesive foil 1 of cutting blade, with on cover film 2, paste operation with the adhesive foil 1 of cutting blade with predetermined interval.
The manufacturing process of cutting film 11, for example following carrying out.At first, base material 13 can be by existing known film-forming method masking.As this film-forming method, can illustration such as the tape casting in calendering masking method, the organic solvent, the blowing extrusion molding in the enclosed system, T shape die head extrusion molding, coetrusion, dry lamination method etc.
Then, the coating adhesive composition solution forms and films on base material 13, then makes this dried coating film (carrying out as required heat cross-linking) and formation adhesive phase 14 under predetermined condition.Be not particularly limited as coating process, can enumerate such as rolling method, silk screen rubbing method, intaglio plate rubbing method etc.In addition, as drying condition, can suitably set according to the thickness of filming or material etc.Particularly, for example in 80～150 ℃ of baking temperatures, the scope of 0.5～5 minute drying time, carry out.In addition, also can coating adhesive composition on the first partition 21 form film after, dry coating under aforementioned drying condition and form adhesive phase 14.Afterwards, adhesive phase 14 is pasted on the base material 13 with the first partition 21.Thus, make adhesive phase 14 by the cutting film 11(of the first partition 21 protections with reference to figure 3(a)).The cutting film 11 of making can have the long size form that is wound as drum.At this moment, preferred 1 reels when the cutting length direction of film 11 or Width are applied tensile stress, so that do not produce lax, the skew of reeling, position skew.But by applying tensile stress, cutting film 11 is wound as drum under the state of residual stretching residual strain.In addition, during the coiling of cutting film 11, sometimes owing to applying described tensile stress cutting film 11 is stretched, but coiling not with stretched operation as purpose.
As adhesive phase 14, adopt to comprise ultraviolet-curing adhesive, and carried out in advance in the situation of adhesive phase of ultraviolet curing following formation.That is, form at base material 13 coating ultraviolet-curing adhesive compositions film after, this is filmed under predetermined condition dry (carrying out as required heat cross-linking), form adhesive phase.Coating process, coating condition and drying condition can similarly carry out with aforementioned.In addition, also can form at the first partition 21 coating ultraviolet-curing adhesive compositions film after, under aforementioned drying condition, dried coating film is formed adhesive phase.Then, adhesive phase is transferred on the base material 13.Then, under predetermined condition to the adhesive phase irradiation ultraviolet radiation.The ultraviolet irradiation condition is not particularly limited, and accumulated light is preferably at 50～800mJ/cm usually
2Scope in, more preferably at 100～500mJ/cm
2Scope in.By accumulated light being adjusted in the described number range, the peeling force F2 between adhesive foil 12 and the cutting film 11 can be controlled in the scope of 0.08～10N/100mm.The ultraviolet ray irradiation is less than 30mJ/cm
2The time, the curing of adhesive phase 14 is insufficient, and is sometimes excessive with the peeling force of adhesive foil 12.As a result, increase with the adhesiveness of adhesive foil, thereby cause the decline of pick.In addition, sometimes produce adhesive paste at adhesive foil after picking up residual.On the other hand, accumulated light surpasses 1000mJ/cm
2The time, sometimes too small with the peeling force of adhesive foil 12.As a result, sometimes between adhesive phase 14 and adhesive foil 12, produce interface peel.As a result, when the cutting of semiconductor wafer, sometimes produce chip and disperse.In addition, sometimes base material 13 is produced pyrolytic damage.In addition, excessive thereby the over cure of adhesive phase 14 carries out tensile modulus of elasticity, dilatancy descends.In addition, ultraviolet irradiation can carry out after the stickup operation of described later and adhesive foil 12.At this moment, the ultraviolet ray irradiation is preferably carried out from base material 13 1 sides.
The production process of adhesive foil 12 is following to carry out.That is, the adhesive compound solution that is used to form adhesive foil 12 is applied to form on the base material partition 22 in the mode that reaches predetermined thickness films.Then, under predetermined condition, with dried coating film, form adhesive foil 12.Be not particularly limited as coating process, can enumerate such as rolling method, silk screen rubbing method, intaglio plate rubbing method etc.In addition, as drying condition, can suitably set according to the thickness of filming or material etc.Particularly, for example in 70～160 ℃ of baking temperatures, the scope of 1～5 minute drying time, carry out.In addition, also can coating binder composition on the second partition 23 form film after, under aforementioned drying condition, make dried coating film and form adhesive foil 12.Afterwards, adhesive foil 12 is pasted on the base material partition 22 with the second partition 23.Thus, be produced on the laminate film (with reference to figure 3(b) that stacks gradually adhesive foil 12 and the second partition 23 on the base material partition 22).This adhesive foil 12 can have the long size form that is wound as drum.At this moment, preferably when being applied tensile stress, the length direction of adhesive foil 12 or Width reel, so that do not produce lax, the skew of reeling, position skew.
Then, adhesive foil 12 is carried out stamping-out according to the shape of semiconductor wafer to be pasted, and stick on the cutting film 11.Thus, obtain adhesive foil 1 with cutting blade.That is, will cut film 11 and peel off from the first partition 21, and the adhesive foil 12 behind the stamping-out will be peeled off from the second partition 23, and as the mode of sticking veneer both be pasted (with reference to figure 3(c) with adhesive foil 12 and adhesive phase 14).At this moment, to cutting film 11 or adhesive foil 12 any one carries out crimping when circumference is applied tensile stress at least.In addition, cutting film 11 when being wound as the long size of drum, preferably to cutting film 11 in the situation that its length direction does not apply tensile stress carries as far as possible.Because can suppress the stretching residual strain of film.But, from preventing that cutting film 11 produces the viewpoint consideration that the skew that relaxes or reel, position skew, space (bubble) etc. produce, and can apply tensile stress in the scope of 10～25N.If in this scope, even residual stretching residual strain on the cutting film 11 then also can prevent from cutting between film 11 and the adhesive foil 12 and produces interface peel.
In addition, for example can cut by crimping the stickup of film 11 and adhesive foil 12.At this moment, the laminating machine temperature is not particularly limited, and preferred 30～80 ℃ usually, more preferably 30～60 ℃, particularly preferably 30～50 ℃.In addition, line pressure also is not particularly limited, usually preferred 0.1～20kgf/cm, more preferably 1～10kgf/cm.By laminating machine temperature and/or line pressure are adjusted in the aforementioned number range separately, cutting film 11 and the adhesive foil 12 of glass transition temperature in-20～50 ℃ of scopes of organic principle are pasted, the peeling force F2 between adhesive foil 12 and the cutting film 11 can be controlled in the scope of 0.08～10N/100mm.At this, for example by rising laminating machine temperature in aforementioned range, can increase the peeling force F2 between cutting film 11 and the adhesive foil 12.In addition, by in aforementioned range, increasing line pressure, also can increase peeling force F2.
Then, the base material partition 22 on the adhesive foil 12 is peeled off, and when applying tensile stress, pasted cover film 2.Then, will cut film 11 stamping-outs take predetermined interval and be the circle corresponding with the ring frame.Thus, be produced on the cover film 2 with predetermined interval and be laminated with the film for semiconductor apparatus 10 with the adhesive foil 1 of cutting blade after precut.
With the stickup of the adhesive foil 12 in the adhesive foil 1 of cutting blade with cover film 2, preferably undertaken by crimping.At this moment, the laminating machine temperature is not particularly limited, and preferred 20～80 ℃ usually, more preferably 20～60 ℃, particularly preferably 20～50 ℃.In addition, line pressure also is not particularly limited, usually preferred 0.1～20kgf/cm, more preferably 0.2～10kgf/cm.By laminating machine temperature and/or line pressure are adjusted in the aforementioned number range separately, cover film 2 and the adhesive foil 12 of glass transition temperature in-20～50 ℃ of scopes of organic principle are pasted, the peeling force F1 between adhesive foil 12 and the cover film 2 can be controlled in the scope of 0.025～0.075N/100mm.At this, for example by rising laminating machine temperature in aforementioned range, can increase with the adhesive foil 1 of cutting blade and the peeling force F1 between the cover film 2.In addition, by in aforementioned range, increasing line pressure, also can increase peeling force F1.In addition, preferably to cover film 2 in the situation that its length direction does not apply tensile stress carries as far as possible.Because can suppress the stretching residual strain of cover film 2.But, produce the viewpoint consideration that the skew that relaxes or reel, position skew, space (bubble) etc. produce from preventing cover film 2, can in the scope of 10～25N, apply tensile stress.If in this scope, even residual stretching residual strain on the cover film 2 then can prevent that also cover film 2 is with respect to the phenomenon with the film perk of the adhesive foil 1 of cutting blade.
In addition, the first partition 21, the base material partition 22 of adhesive foil 12 and the second partition 23 of pasting at this adhesive foil 12 the adhesive phase 14 of cutting film 11 is pasted are not particularly limited, and can use the in the past known film of processing through the demoulding.The first partition 21 and the second partition 23 have respectively the function as protective material.In addition, base material partition 22 has the function of base material as on the adhesive phase 14 that adhesive foil 12 is transferred to cutting film 11 time.The material that consists of these each films is not particularly limited, and can adopt in the past known material.Particularly, can enumerate such as PETG (PET), polyethylene, polypropylene or utilize the removers such as fluorine-containing remover, chain alkyl esters of acrylic acid remover to carry out the plastic film of surperficial coating or paper etc.
Adhesive foil of the present invention can be used as die bonding film, flip chip type semiconductor back surface uses with film.The flip chip type semiconductor back surface film is the film that forms at the back side that is connected to the semiconductor element (for example semiconductor chip) on the adherend (various substrates such as lead frame or circuit board) with flip chip.
Embodiment
Below, describe illustratively the preferred embodiments of the present invention in detail.But the material of putting down in writing among this embodiment, use level etc. if not the record of being particularly limited property, then only limit to this with main idea of the present invention unintentionally.In addition, occur referring to weight portion in the situation of " part ".
(embodiment 1)
The making of＜cutting film 〉
In the reaction vessel with condenser pipe, nitrogen inlet tube, thermometer and agitating device, add 88.8 parts of acrylic acid-2-ethyl caproites (hereinafter referred to as " 2EHA "), 11.2 parts of 2-Hydroxy ethyl acrylates (hereinafter referred to as " HEA "), 0.2 part of benzoyl peroxide and 65 parts of toluene, in nitrogen stream, under 61 ℃, carry out polymerization in 6 hours and process, obtain weight average molecular weight and be 850,000 acrylic polymer A.The mol ratio of 2EHA and HEA is 20 moles of 100 mol ratios.In addition, weight average molecular weight is for utilizing the GPC(gel permeation chromatography) measure and carry out the value that polystyrene conversion calculates.
In this acrylic polymer A, add 12 parts of (be 80 % by mole with respect to HEA) 2-methylacryoyloxyethyl isocyanates (hereinafter referred to as " MOI "), in air draught, carry out addition in 48 hours at 50 ℃ and process, obtain acrylic polymer A '.
Then, in 100 parts of acrylic polymer A ', add 8 parts of isocyanates crosslinking agent (trade names " コ ロ ネ ー ト L ", Japanese polyurethane Co., Ltd. makes) and 5 parts of Photoepolymerizationinitiater initiater (trade names " イ Le ガ キ ュ ア 651 ", Ciba company makes), make binder solution.
The binder solution of aforementioned preparation is coated on the face after polysiloxanes is processed of PET release liner (the first partition), 120 ℃ of heat cross-linkings 2 minutes, formed the adhesive phase of thickness 10 μ m.Then, paste the polyolefin film (base material) of thickness 100 μ m on the surface of this adhesive phase.Afterwards, preserved 24 hours at 50 ℃.
In addition, described PET release liner is peeled off, only ultraviolet to the part that is equivalent to semiconductor wafer adhesive portion (circle of diameter 200mm) (circle of the diameter 220mm) direct irradiation of adhesive phase.Thus, make the cutting film of the present embodiment.In addition, illuminate condition is as described below.In addition, measure the stretch modulus of adhesive phase by method described later, stretch modulus is 19.7MPa.
＜ultraviolet illuminate condition 〉
Ultraviolet ray (UV) irradiation unit: high-pressure mercury lamp
Ultraviolet ray irradiation accumulated light: 500mJ/cm
2
Output: 120W
Exposure intensity: 200mW/cm
2
The making of＜adhesive foil 〉
With respect to 100 parts of acrylic polymer (Industrial Co., Ltd's systems on the root take ethyl acrylate-methyl methacrylate as main component, trade name: パ ラ Network ロ Application W-197CM, Tg:18 ℃), (Japanese polyurethane Co., Ltd. makes with the isocyanates crosslinking agent, trade name: コ ロ ネ ー ト HX) 2 parts, epoxy resin (JER Co., Ltd. system, エ ピ コ ー ト 1004) 50 part, phenolic resins (Mitsui Chemicals, Inc's system, trade name: ミ レ ッ Network ス XLC-3L) 10 parts and as preparing spherical SiO 2 (Admatechs(ア De マ テ ッ Network ス) Co., Ltd.'s system of inorganic filler, trade name SO-25R, average grain diameter 0.5 μ m) 30 parts are dissolved in the methylethylketone, are adjusted to concentration 18.0 % by weight.In addition, the stretch modulus by the adhesive foil before the method mensuration described later hot curing is 531MPa.
The soln using jetting type blade coating machine (Off ァ ウ Application テ ン コ ー タ ー) of this adhesive compound is applied to the demoulding processes the upper coating that forms of film (base material partition), this coating is directly sprayed 2 minutes 150 ℃, the hot blast of 10m/s carry out drying.Thus, process the adhesive foil that film is made thickness 25 μ m in the demoulding.In addition, process film (base material partition) as the demoulding, use the material after PETG (thickness 50 μ m) is implemented polysiloxanes demoulding processing.
＜with the making of the adhesive foil of cutting blade 〉
Then, described adhesive foil is cut into the circle of diameter 230mm, and the adhesive phase of described cutting film is pasted with the adhesive foil that is cut into circle.Paste and use nip rolls, the stickup condition is to paste under laminating machine temperature 50 C, line pressure 3kgf/cm, then, the base material partition on the adhesive foil is peeled off and pasted as the demoulding and process pet film (thickness 38 μ m) film (cover film), that process through the polysiloxanes demoulding.At this moment, in order to prevent the generations such as position skew, space (bubble), use dance roller, cover film is applied the tensile stress of 17N along the MD direction, simultaneously do not apply laminating temperature, under line pressure 2kgf/cm, paste, make the adhesive foil with cutting blade.
The making of＜film for semiconductor apparatus 〉
In addition, centered by adhesive foil, be the circle of diameter 270mm with cutting film stamping-out, obtain thus being pasted with 200 with the film for semiconductor apparatus of the present embodiment of the adhesive foil of cutting blade with the interval of 10mm.
(embodiment 2)
The making of＜cutting film 〉
The cutting film of the present embodiment uses the cutting film same with previous embodiment 1.
The making of＜adhesive foil 〉
With respect to 100 parts of acrylic polymer (Industrial Co., Ltd's systems on the root take ethyl acrylate-methyl methacrylate as main component, trade name: パ ラ Network ロ Application W-197CM, Tg:18 ℃), (Japanese polyurethane Co., Ltd. makes with the isocyanates crosslinking agent, trade name: コ ロ ネ ー ト HX) 4 parts, epoxy resin (JER Co., Ltd. system, エ ピ コ ー ト 1004) 30 part, phenolic resins (Mitsui Chemicals, Inc's system, ミ レ ッ Network ス XLC-3L) 15 part and as preparing spherical SiO 2 (Admatechs Co., Ltd. system of inorganic filler, trade name SO-25R, average grain diameter 0.5 μ m) 60 parts are dissolved in the methylethylketone, are adjusted to concentration 18.0 % by weight.In addition, the stretch modulus by the adhesive foil before the method mensuration described later hot curing is 224MPa.
The making of＜film for semiconductor apparatus 〉
The film for semiconductor apparatus of the present embodiment 2 except using aforementioned adhesive foil, is similarly pasted the pet film (thickness 38 μ m) of processing through the polysiloxanes demoulding with the present embodiment 1, makes thus film for semiconductor apparatus.
(embodiment 3)
The making of＜cutting film 〉
The cutting film of the present embodiment, the thickness of dried adhesive phase is 5 μ m, and the thickness of employed polyolefin film (base material) is 40 μ m, and the gross thickness of cutting film is 45 μ m, in addition, similarly make the cutting film of the present embodiment with previous embodiment 1.
The making of＜adhesive foil 〉
The adhesive foil of the present embodiment uses the adhesive foil same with previous embodiment 1.
The making of＜film for semiconductor apparatus 〉
The film for semiconductor apparatus of the present embodiment 3 except using aforementioned cutting film, is similarly pasted the pet film (thickness 100 μ m) of processing through the polysiloxanes demoulding with the present embodiment 1, makes thus film for semiconductor apparatus.
(embodiment 4)
The making of＜cutting film 〉
The cutting film of the present embodiment, the thickness of dried adhesive phase is 10 μ m, and the thickness of employed polyolefin film (base material) is 150 μ m, and the gross thickness of cutting film is 160 μ m, in addition, similarly make the cutting film of the present embodiment with previous embodiment 1.
The making of＜adhesive foil 〉
The adhesive foil of the present embodiment uses the adhesive foil same with previous embodiment 1.
The making of＜film for semiconductor apparatus 〉
The film for semiconductor apparatus of the present embodiment 4 except using aforementioned cutting film, is similarly pasted the pet film (thickness 12 μ m) of processing through the polysiloxanes demoulding with the present embodiment 1, makes thus film for semiconductor apparatus.
(embodiment 5)
The making of＜cutting film 〉
The cutting film of the present embodiment, the thickness of dried adhesive phase is 5 μ m, and the thickness of employed polyolefin film (base material) is 75 μ m, and the gross thickness of cutting film is 80 μ m, in addition, similarly make the cutting film of the present embodiment with previous embodiment 1.
The making of＜adhesive foil 〉
The adhesive foil of the present embodiment uses the adhesive foil same with previous embodiment 1.
The making of＜film for semiconductor apparatus 〉
The film for semiconductor apparatus of the present embodiment 5, use aforesaid cutting film, the laminating machine Temperature Setting is 50 ℃, line pressure is set as 5kg/cm, in addition, similarly paste the pet film (thickness 75 μ m) of processing through the polysiloxanes demoulding with the present embodiment 1, make thus film for semiconductor apparatus.
(comparative example 1)
The making of＜cutting film 〉
The cutting film of this comparative example, the thickness of dried adhesive phase is 50 μ m, and the thickness of the polyolefin film of use (base material) is 150 μ m, and the gross thickness of cutting film is 200 μ m, in addition, similarly make the cutting film of the present embodiment with previous embodiment 1.
The making of＜film for semiconductor apparatus 〉
The film for semiconductor apparatus of this comparative example 1, use aforesaid cutting film, the laminating machine Temperature Setting is 60 ℃, line pressure is set as 5kg/cm, in addition, similarly paste the pet film (thickness 12 μ m) of processing through the polysiloxanes demoulding with the present embodiment 1, make thus film for semiconductor apparatus.
(comparative example 2)
The making of＜cutting film 〉
The cutting film of this comparative example, the thickness of dried adhesive phase is 15 μ m, and the thickness of the polyolefin film of use (base material) is 40 μ m, and the gross thickness of cutting film is 55 μ m, in addition, similarly make the cutting film of the present embodiment with previous embodiment 1.
The making of＜film for semiconductor apparatus 〉
The film for semiconductor apparatus of this comparative example 2, use aforesaid cutting film, in addition, similarly paste the pet film (thickness 150 μ m) of processing through the polysiloxanes demoulding with the present embodiment 1, make thus film for semiconductor apparatus.
(mensuration of peeling force)
Peeling force between peeling force in the resulting film for semiconductor apparatus of each embodiment and comparative example between adhesive foil and the cover film, cutting film and the adhesive foil and the mensuration of the peeling force between cover film and the cutting film (adhesive phase), under the condition of 23 ± 2 ℃ of temperature, relative humidity 55 ± 5%RH, peeling rate 300mm/ minute, (JIS K6854-3) carries out by the disbonded test of T shape.In addition, as cupping machine, commodity in use name “ オ ー ト グ ラ Off AGS-H " cupping machine of (Shimadzu Scisakusho Ltd's system).
(stretch modulus of adhesive phase)
The value of the stretch modulus of adhesive phase obtains by following assay method.That is, adhesive phase 14 is cut out long 30.0mm, wide 10.0mm, basal area 0.1～0.5mm
2Sample.This sample is carried out the tension test of MD direction measuring under the condition of 23 ℃ of temperature, chuck spacing 20mm, draw speed 50mm/ minute, measure the variable quantity (mm) of this sample elongation.Thus, in gained S-S(strain-intensity) in the curve, draw tangent line at initial rising part, be equivalent to 100% hot strength when extending divided by basal area, with the stretch modulus of income value as adhesive phase with this tangent line.
(stretch modulus of the adhesive foil before the hot curing)
The adhesive compound of embodiment and comparative example is applied to reaches 100 μ m on the release liner of having implemented lift-off processing, obtain cutting film.For this adhesive foil, use the determination of viscoelasticity device (Rheometric company system, model: RSA-II), the stretch modulus under measuring 23 ℃.More specifically, sample size is set as long 30mm * wide 5mm * thick 0.1mm, to measure sample and be installed to film stretching and measure with on the anchor clamps, in-30 ℃～280 ℃ temperature range, under the condition of 10 ℃/minute of frequency 10Hz, strain 0.025%, programming rate, measure.
(having or not interface peel and film perk)
The affirmation of film perk in the resulting film for semiconductor apparatus of each embodiment and comparative example, following carrying out.That is, each film for semiconductor apparatus was placed 120 hours in the freezer of temperature-30 ± 2 ℃.Then, under the environment of 23 ± 2 ℃ of temperature, relative humidity 55 ± 5%Rh, placed 24 hours.Then, confirm to have or not interface peel and film perk between each film in the film for semiconductor apparatus.Evaluation criterion is, the situation of not observing interface peel or film perk by naked eyes is zero, situation about observing for *.
(tight is arranged after the installation)
The having or not of space in the resulting film for semiconductor apparatus of each embodiment and comparative example, followingly confirm.That is, from each film for semiconductor apparatus, respectively cover film is peeled off, carried out the installation of semiconductor wafer at adhesive foil.Semiconductor wafer uses and to be of a size of 8 inches, the semiconductor wafer of thickness 75 μ m.The mounting condition of semiconductor wafer is as described below.
＜stickup condition 〉
Sticker: ACC Co., Ltd. system, trade name: RM-300
Paste speedometer: 50mm/ pastes pressure: 0.2MPa second
Sticking temperature: 50 ℃
Then, confirm on the sticking veneer with the adhesive foil of cutting blade and semiconductor wafer tight (bubble) to be arranged by microscope.The result is as shown in table 1 below.
(evaluation of pick)
From each film for semiconductor apparatus, cover film is peeled off, carried out the installation of semiconductor wafer at adhesive foil.As semiconductor wafer, using size is 8 inches, the wafer of thickness 75 μ m.The mounting condition of semiconductor wafer and aforementioned same.
Then, carry out the cutting of semiconductor wafer according to following condition, form 30 semiconductor chips.Then, semiconductor chip is picked up with adhesive foil.Pick up 30 semiconductor chips (long 10mm * wide 10mm) are carried out, to counting without the successful situation of picking up damaged, semiconductor chip, be calculated to be power.The result is as shown in table 1 below.In addition, in comparative example 1, when pasting by placement equipment, cover film and adhesive foil are not peeled off, and produce several times carrying wrong (can not draw).Pickup conditions is as described below.
＜cutting condition 〉
Cutting method: stage cutting (ス テ ッ プ カ ッ ト)
Cutter sweep: DISCO DFD-6361(trade name, the Disco(デ ィ ス コ of Co., Ltd.) system)
Cutting speed: 30mm/ second
Cutting blade: Z1:Disco company system " NBC-ZH203O-SE27HCD "
Z2:Disco company system " NBC-ZH103O-SE27HCB "
Cutting blade rotating speed: Z1:40,000rpm, Z2:45,000rpm
Cutting belt penetraction depth: 20 μ m
Wafer chip size: 10mm * 10mm
＜pickup conditions 〉
Pick device: the new river company of trade name " SPA-300 " system
Crown number: 9
Pushing volume on the pin: 300 μ m
Push away speed on the pin: 10mm/ second
The amount of leaving behind: 3mm
＜space that post-evaluation in stored refrigerated 1 month has or not the transfer printing of coiling vestige to cause 〉
The film for semiconductor apparatus that obtains in each embodiment and the comparative example coiling tension take 2kg is batched as drum.And, under this state, in the freezer of 5 ℃ of temperature, placed one month.Afterwards, return to room temperature and then unclamp roller, use the 100th dicing/die bonding film, carry out the installation of semiconductor wafer, and naked eyes confirm to have tight.It is 8 inches, the semiconductor wafer of thickness 75 μ m that semiconductor wafer uses size.In addition, the space after stickup condition and the above-mentioned installation is estimated same.The result is as shown in table 1.
Table 1
In addition, peeling force F1 in the table 1 represents with the adhesive foil of cutting blade and the peeling force between the cover film, peeling force F2 represents to cut the peeling force between film and the adhesive foil, and peeling force F3 represents the peeling force between cover film and the cutting film (adhesive phase).
(result)
As shown in table 1, for the film for semiconductor apparatus of embodiment 1～5, after the firm installation of semiconductor wafer, do not confirm the space.In addition, reeling and stored refrigerated one month the time space to causing owing to the transfer printing of coiling vestige unconfirmed.In addition, when utilizing erecting device to paste on the semiconductor wafer, adhesive foil and cover film with cutting blade suitably can be peeled off (drawing).Relative therewith, the film for semiconductor apparatus of comparative example 1 confirms the space after semiconductor wafer is just installed.In addition, reel and stored refrigerated one month the time, confirm because the space that the transfer printing of coiling vestige causes.In addition, also confirm the film perk phenomenon of cover film.In addition, during the installation of semiconductor wafer, cover film is not peeled off from film for semiconductor apparatus, produces to carry several times mistake.In addition, producing chip when the cutting of semiconductor wafer disperses and fragment.In addition, the pick of the film for semiconductor apparatus of comparative example 2 is good, but confirms the space after semiconductor wafer is just installed.In addition, reeling and stored refrigerated one month the time, confirming because the space that the transfer printing of coiling vestige causes.In addition, also confirm the film perk phenomenon of cover film.
Claims (5)
1. film for semiconductor apparatus will be laminated with obtaining with the adhesive foil of cutting blade is stacked on the cover film with predetermined wall of adhesive foil at the cutting film, it is characterized in that,
If when the thickness that the thickness of described cover film is Ta, establish described cutting film was Tb, Ta/Tb was in 0.07～2.5 scope.
2. film for semiconductor apparatus as claimed in claim 1 is characterized in that,
In the T-shaped disbonded test under the condition of 23 ± 2 ℃ of temperature, peeling rate 300mm/ minute, peeling force F1 between described adhesive foil and described cover film is in the scope of 0.025～0.075N/100mm, peeling force F2 between described adhesive foil and described cutting film is in the scope of 0.08～10N/100mm, and described F1 and described F2 satisfy the relation of F1＜F2.
3. film for semiconductor apparatus as claimed in claim 1 or 2 is characterized in that,
The thickness T a of described cover film is 10～100 μ m.
4. such as each described film for semiconductor apparatus in the claims 1 to 3, it is characterized in that,
The thickness T b of described cutting film is 25～180 μ m.
5. a right to use requires the semiconductor device that each described film for semiconductor apparatus is made in 1 to 4.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010199028A JP4991921B2 (en) | 2010-09-06 | 2010-09-06 | Film for semiconductor device and semiconductor device |
| JP2010-199028 | 2010-09-06 | ||
| PCT/JP2011/069473 WO2012032959A1 (en) | 2010-09-06 | 2011-08-29 | Film for semiconductor device and semiconductor device |
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| Publication Number | Publication Date |
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| CN103081068A true CN103081068A (en) | 2013-05-01 |
| CN103081068B CN103081068B (en) | 2016-08-03 |
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| CN201180042794.2A Active CN103081068B (en) | 2010-09-06 | 2011-08-29 | Film for semiconductor apparatus and semiconductor device |
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| JP (1) | JP4991921B2 (en) |
| KR (1) | KR101190467B1 (en) |
| CN (1) | CN103081068B (en) |
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| WO (1) | WO2012032959A1 (en) |
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| CN105637623A (en) * | 2013-11-19 | 2016-06-01 | 积水化学工业株式会社 | Adhesive film for semiconductor bonding |
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| JP6297786B2 (en) * | 2012-12-10 | 2018-03-20 | 日東電工株式会社 | Adhesive sheet, dicing tape integrated adhesive sheet, semiconductor device manufacturing method, and semiconductor device |
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| JP2016111158A (en) * | 2014-12-04 | 2016-06-20 | 古河電気工業株式会社 | Tape for wafer processing |
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| JP2017183705A (en) * | 2016-03-24 | 2017-10-05 | 日東電工株式会社 | Dicing die bonding film, and method of manufacturing semiconductor device |
| JP6389537B2 (en) * | 2017-01-19 | 2018-09-12 | 日東電工株式会社 | Adhesive sheet used for manufacturing semiconductor device, dicing tape integrated adhesive sheet, semiconductor device, and manufacturing method of semiconductor device |
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- 2011-08-29 CN CN201180042794.2A patent/CN103081068B/en active Active
- 2011-08-29 KR KR1020117027458A patent/KR101190467B1/en active IP Right Grant
- 2011-08-29 WO PCT/JP2011/069473 patent/WO2012032959A1/en active Application Filing
- 2011-09-02 TW TW100131753A patent/TWI458005B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105637623A (en) * | 2013-11-19 | 2016-06-01 | 积水化学工业株式会社 | Adhesive film for semiconductor bonding |
| CN105637623B (en) * | 2013-11-19 | 2018-11-27 | 积水化学工业株式会社 | Semiconductor interface shares adhesive film |
| CN106062927A (en) * | 2014-03-24 | 2016-10-26 | 琳得科株式会社 | Protective film forming film, protective film forming sheet and work product manufacturing method |
| CN106062927B (en) * | 2014-03-24 | 2020-04-21 | 琳得科株式会社 | Protective film forming film, protective film forming sheet, and method for producing processed product |
| CN107665853A (en) * | 2016-07-29 | 2018-02-06 | 日东电工株式会社 | The manufacture method of dicing tape integrated semiconductor back surface film and semiconductor device |
| CN106514014A (en) * | 2017-01-17 | 2017-03-22 | 京东方科技集团股份有限公司 | Laser repair method of substrate and laser repair system thereof |
| CN106514014B (en) * | 2017-01-17 | 2018-06-15 | 京东方科技集团股份有限公司 | The laser repair method and its laser repair system of a kind of substrate |
| CN110876256A (en) * | 2018-08-29 | 2020-03-10 | 拓自达电线株式会社 | Electromagnetic wave shielding film, method for manufacturing same, and method for manufacturing shielded printed wiring board |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012032959A1 (en) | 2012-03-15 |
| JP2012059769A (en) | 2012-03-22 |
| KR20120034619A (en) | 2012-04-12 |
| TW201218264A (en) | 2012-05-01 |
| JP4991921B2 (en) | 2012-08-08 |
| KR101190467B1 (en) | 2012-10-11 |
| CN103081068B (en) | 2016-08-03 |
| TWI458005B (en) | 2014-10-21 |
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