TWI458005B - Film for semiconductor device and semiconductor device - Google Patents

Description

Film and semiconductor device for semiconductor device

The present invention relates to a film for a semiconductor device and a semiconductor device manufactured using the film for a semiconductor device.

Previously, the fixation of semiconductor wafers on leadframes or electrode members during the fabrication of semiconductor devices used silver paste. This fixing treatment is performed by applying a paste-like adhesive to a wafer holder of a lead frame or the like, and mounting a semiconductor wafer on the paste-like adhesive to cure the paste-like adhesive layer.

However, the slurry adhesive causes a large unevenness in the coating amount, the coating shape, and the like due to its viscosity behavior or deterioration. As a result, the thickness of the formed paste-like adhesive becomes uneven, and the fixing strength of the semiconductor wafer is not reliable. That is, when the coating amount of the slurry adhesive is insufficient, the fixing strength between the semiconductor wafer and the electrode member is lowered, and the semiconductor wafer is peeled off in the subsequent bonding step. On the other hand, when the coating amount of the slurry adhesive is too large, the slurry adhesive is cast onto the semiconductor wafer to cause poor properties, and the yield or reliability is lowered. The problem in such a fixing process is particularly remarkable as the size of the semiconductor wafer is increased. Therefore, it is necessary to frequently control the amount of application of the slurry adhesive, which hinders workability or productivity.

In the coating step of the paste adhesive, there is a method of additionally applying a paste-like adhesive on the lead frame or the formed wafer. However, in this method, the paste-like adhesive layer is difficult to be uniform, and a special device or a long time is required in the application of the paste-like adhesive. Therefore, it is proposed to adhere half in the dicing step. The conductor wafer also forms a dicing film of the adhesive layer for wafer fixation necessary for the mounting step, and an adhesive film attached to the wafer (see, for example, Patent Document 1).

The adhesive film attached to the wafer is formed by peelably disposing an adhesive layer on the support substrate, and after the semiconductor wafer is crystallized by the adhesion of the adhesive layer, the support substrate is extended to form The wafer is peeled off together with the adhesive layer, and the formed wafer and the adhesive layer are collected one by one and fixed to the bonded body such as the lead frame via the adhesive layer.

Previously, the adhesive film attached to the wafer was separately produced by the separation of the crystal film and the adhesive film by the manufacturing process, and then the two were bonded together. Therefore, from the viewpoint of preventing slack or winding misalignment, misalignment, voids (bubbles), and the like in the respective film forming steps, it is preferable to apply tensile stress to each film by the transfer of the rolls. The fabrication of an adhesive film for cutting a wafer.

Such an adhesive film attached to a wafer may be hardened if it is stored in a high-temperature, high-humidity environment or under a load for a long period of time. As a result, the fluidity of the adhesive layer or the holding power of the semiconductor wafer is lowered, and the peeling property after dicing is lowered. Therefore, the adhesive film attached to the wafer is mostly stored at -30 ° C to -10 ° C or stored at -5 ° C to 10 ° C in a refrigerated state, whereby long-term storage of film properties can be achieved.

The adhesive film attached to the wafer is shaped into a shape of a semiconductor wafer to be attached (for example, a circular shape) in consideration of workability such as attachment to a semiconductor wafer or mounting on a ring frame during dicing. The pre-cut processed attached wafer-attached adhesive film was implemented.

The adhesive film attached to the wafer is bonded to a die-cut film formed by laminating an adhesive layer on a substrate, and then punched into a circular shape. It is manufactured in a circular shape corresponding to the ring frame. When the semiconductor wafer is diced, the ring frame can be attached to the outer peripheral portion of the dicing film to fix the adhesive film attached to the wafer.

The pre-cut processed wafer-attached adhesive film is attached to the long cover film at a predetermined interval, and then wound up in a roll shape and transported or stored in the form of a film for semiconductor device production.

[Previous Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. 60-57642

However, in the above-described film for a semiconductor device, the thickness of a portion in which the adhesive film attached to the wafer is laminated is thicker than the thickness of a portion of the adhesive film on which the wafer is not laminated. Therefore, in particular, when the number of rolls is increased or the tension at the time of winding is increased, the edge of the other adhesive film attached to the wafer is in contact with the adhesive film of the attached wafer, and the transfer mark is transferred to adhere the film. The smoothness of the film is impaired. Such a transfer mark is particularly likely to occur when the adhesive film is formed of a relatively soft resin, when the thickness of the adhesive film is thick, and when the number of windings of the film for a semiconductor device is large. Further, when an adhesive film having such a transfer mark and having smoothness is attached to the semiconductor wafer, voids (air bubbles) are generated between the semiconductor wafer and the adhesive film. Such voids can cause trouble in semiconductor wafer processing, and may reduce the yield of the fabricated semiconductor device.

Therefore, in order to suppress the occurrence of the above-described transfer marks, a method of reducing the coiling pressure of the film for a semiconductor device is considered. However, this method may cause winding misalignment, such as difficulty in setting on a tape mounting machine, etc., which is Obstruction.

Further, in order to suppress the occurrence of the above-mentioned transfer marks, it is conceivable to provide a buffer substrate on the back side of the adhesive film. However, there is a problem in that residual stress remains between the adhesive film and the cushioning substrate, whereby both of the peeling occurs at the interface between the adhesive film and the cushioning substrate after transport in the above-described low temperature state or after storage for a long period of time.

The present invention has been made in view of the above-described problems, and an object of the invention is to provide a film for a semiconductor device in which an adhesive film of a wafer to which an adhesive film is laminated on a dicing film is provided at a predetermined interval and laminated on a cover film. When the film for a semiconductor device is wound into a roll shape, transfer marks can be prevented from being generated on the adhesive film.

The inventors of the present application have studied the film for a semiconductor device in order to solve the above-mentioned problems. As a result, it has been found that by controlling the thickness of the cover film constituting the film for a semiconductor device and the thickness of the dicing film, generation of transfer marks on the adhesive film can be suppressed, and the present invention has been completed.

In other words, the film for a semiconductor device of the present invention is a film for a semiconductor device which is provided on a cover film by a film-attached adhesive film in which an adhesive film is laminated on a dicing film, and is laminated on the cover film. The thickness is set to Ta, and when the thickness of the above-mentioned diced film is Tb, Ta/Tb is in the range of 0.07 to 2.5.

For example, when the thickness Ta of the cover film is constant, the Ta/Tb is thicker as the value is smaller. According to the above configuration, since the Ta/Tb is 0.07 or more, the step in which the portion having the dicing film is laminated and the portion where the dicing film is not laminated is equal to or less than a certain value. Therefore, generation of transfer marks can be suppressed. and Further, since the Ta/Tb is 0.07 or more, the thickness of the dicing film is thicker than that of the cover film. Therefore, stress can be absorbed by the thickness of the cover film, and generation of transfer marks can be suppressed. Further, since the Ta/Tb is 0.07 or more, since the thickness of the dicing film is thicker than that of the cover film, the bonded film and the cover film having the dicing film can be bonded to the semiconductor wafer. It is preferably peeled off (tongue peeling). Further, when the thickness Tb of the dicing film is constant, for example, when the value is smaller, the thickness of the cover film is thinner. Since the above Ta/Tb is 2.5 or less, the thickness of the cover film is not more than a certain value. Therefore, the followability to the step of the portion in which the dicing film is laminated and the portion in which the dicing film is not laminated is good. In addition, since the thickness of the cover film is not more than 2.5, the thickness of the cover film is not more than a predetermined value. Therefore, the pressure at which the adhesive film attached to the wafer is laminated on the cover film can be made uniform, and the air bubbles can be prevented from entering. According to the above configuration, when the film for a semiconductor device in which the adhesive film and the cover film are sequentially laminated on the dicing film is wound into a roll shape, transfer marks can be prevented from being generated on the adhesive film.

In the above configuration, the peeling force F1 between the adhesive film and the cover film in the T-peel test under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min is preferably 0.025 N/100 mm to 0.075 N/ In the range of 100 mm, the peeling force F2 between the adhesive film and the dicing film is in the range of 0.08 N/100 mm to 10 N/100 mm, and the F1 and the F2 satisfy the relationship of F1 < F2.

The film for a semiconductor device is preferably manufactured while applying a tensile strain to the dicing film, the adhesive film, or the cover film from the viewpoint of preventing slack, winding misalignment, misalignment, voids (bubbles), and the like. The result is semi-guided The film for a bulk device is produced in a state in which any film of the film constituting the film has tensile residual strain. This tensile residual strain causes shrinkage in each film, for example, when it is frozen at -30 ° C to -10 ° C or at a low temperature of -5 ° C to 10 ° C or stored for a long period of time. Moreover, the degree of shrinkage varies depending on the physical properties of the respective films. For example, the degree of shrinkage of the dicing film in each film is the greatest, and the degree of shrinkage of the cover film is the smallest. As a result, interfacial peeling occurs between the dicing film and the adhesive film, or a film bulging phenomenon of the cover film is caused.

In the above configuration, the peeling force F1 between the adhesive film and the cover film is in the range of 0.025 N/100 mm to 0.075 N/100 mm, and the peeling force F2 between the adhesive film and the dicing film is 0.08 N/100 mm to 10 N/ The configuration of the relationship of F1 < F2 is satisfied in the range of 100 mm. As described above, since the shrinkage in each film is the largest in the dicing film, the peeling force F2 between the adhesive film and the dicing film is further increased by the peeling force F1 between the adhesive film and the cover film, The shrinkage of the dicing film having the largest shrinkage rate is suppressed, and the interface peeling between the dicing film and the adhesive film or the film bulging phenomenon of the cover film is prevented. Further, it is also possible to prevent a part or all of the adhesive film from being transferred onto the cover film.

In the above configuration, it is preferable that the thickness Ta of the cover film is 10 μm to 100 μm.

In the above configuration, it is preferable that the thickness of the crystal cut film Tb is 25 μm to 180 μm.

Moreover, the semiconductor device of the present invention is produced by using the film for a semiconductor device described above.

The film for a semiconductor device of the present embodiment will be described below.

(a) of FIG. 1 is a plan view showing an outline of a film for a semiconductor device of the present embodiment, and (b) of FIG. 1 is a partial cross-sectional view of a film for a semiconductor device. The film 10 for a semiconductor device has a structure in which an adhesive film 1 to which a wafer is attached is provided at a predetermined interval and laminated on the cover film 2. The adhesive film 1 attached to the wafer is formed by laminating the adhesive film 12 on the dicing film 11, and the dicing film 11 is a structure in which the adhesive layer 14 is laminated on the substrate 13.

FIG. 2 is a partial cross-sectional view showing a state in which the film for a semiconductor device shown in (a) of FIG. 1 and (b) of FIG. 1 is wound into a roll shape. As shown in FIG. 2, the film 10 for a semiconductor device wound in a roll shape has a step 19 in a portion where the adhesive film 1 to which the wafer is attached is laminated, and a portion where the adhesive film 1 to which the wafer is attached is not laminated. Further, a plurality of wafer-attached adhesive films 1 on the cover film 2 are shifted from each other in the lateral direction and laminated. Therefore, the edge of the other wafer-attached adhesive film 1 abuts against the attached wafer-attached adhesive film 1.

In the film 10 for a semiconductor device, the thickness of the cover film 2 is Ta, and when the thickness of the crystal film 11 is Tb, Ta/Tb is 0.07 to 2.5. The above Ta/Tb is preferably from 0.1 to 2, more preferably from 0.3 to 1.5. For example, when the thickness Ta of the cover film 22 is constant, the Ta/Tb is thicker as the value is smaller. According to the film 10 for a semiconductor device, since the Ta/Tb is 0.07 or more, the portion where the dicing film 11 is laminated, that is, the portion where the adhesive film 1 to which the wafer is attached is laminated, and the portion of the portion where the dicing film 11 is not laminated is formed. The difference 19 is certainly below. Therefore, it is possible to suppress the occurrence of transfer marks on the adhesive film 12 of the adhesive film 1 constituting the attached wafer. Further, since the Ta/Tb is 0.07 or more, the thickness of the dicing film 11 is thicker than that of the cover film 2, so that stress can be absorbed by the thickness of the cover film 2, and generation of transfer marks can be suppressed. and Further, since the Ta/Tb is 0.07 or more, the thickness of the dicing film is thicker than that of the cover film, so that the bonded film and the cover film having the dicing film can be bonded to the semiconductor wafer. It is preferably peeled off (tongue peeling). Further, when the thickness Tb of the dicing film 11 is constant, for example, when the value is smaller, the thickness of the cover film 2 is thinner. Further, since the Ta/Tb is 2.5 or less, the thickness of the cover film 2 is not more than a certain value. Therefore, the followability to the step of the portion where the dicing film 11 is laminated and the portion where the dicing film 11 is not laminated is good. In addition, since the thickness of the cover film 2 is not more than 2.5, the thickness of the cover film 2 is not more than a predetermined value. Therefore, the pressure at which the adhesive film 1 attached to the wafer is laminated on the cover film 2 can be made uniform, and air bubbles can be prevented from entering. As described above, when the film 10 for a semiconductor device is wound into a roll shape, transfer marks can be prevented from being generated on the adhesive film 12.

The peeling force F1 between the adhesive film 12 and the cover film 2 is smaller than the peeling force F2 between the adhesive film 12 and the dicing film 11. In the manufacturing process of the film for semiconductor device 10, it is preferable to prevent the slack film 11 , the adhesive film 12 , and the cover film 2 from the viewpoint of preventing slack or winding misalignment, misalignment, voids (bubbles), and the like. It is produced by applying tensile tension and laminating. Therefore, each film has a tensile residual strain. This tensile residual strain causes shrinkage in each film, for example, when it is frozen at -30 ° C to -10 ° C or at a low temperature of -5 ° C to 10 ° C or stored for a long period of time. For example, the degree of shrinkage of the dicing film is the greatest, and the degree of shrinkage of the cover film is minimal. Here, the film for a semiconductor device of the present embodiment can prevent the interfacial peeling of the film or the film of the cover film 2 due to the difference in shrinkage of the respective films by achieving the relationship F1 < F2 between the peeling forces F1 and F2. Uplifting phenomenon. Moreover, it is also possible to prevent a part of the adhesive film 12 or Transfer to the cover film 2 in its entirety.

The peeling force F1 between the adhesive film 12 and the cover film 2 is preferably in the range of 0.025 N/100 mm to 0.075 N/100 mm, more preferably in the range of 0.03 N/100 mm to 0.06 N/100 mm, and particularly preferably 0.035 N. /100mm~0.05N/100mm range. When the peeling force F1 is less than 0.025 N/100 mm, there are the following cases: for example, when the film is frozen at -30 ° C to -10 ° C or at a low temperature of -5 ° C to 10 ° C or stored for a long time, the adhesive film 12 and the cover are covered. The film 2 shrinks at different shrinkage rates, thereby causing a film bulging phenomenon of the cover film 2. In the case of transporting the film 10 for a semiconductor device or the like, wrinkles or winding misalignment may occur, and foreign matter may be mixed. Further, there is a case where a void (air bubble) is generated between the adhesive film 12 and the semiconductor wafer at the time of mounting the semiconductor wafer. On the other hand, when the peeling force F1 is more than 0.075 N/100 mm, the adhesion between the adhesive film 12 and the cover film 2 is too strong, so that the adhesion of the adhesive film 12 is formed when the cover film 2 is peeled off or the cover film 2 is shrunk. The agent (details are explained below) is part or all of the transfer. Further, when the value of the peeling force F1 is a thermosetting type of the adhesive film 12, it means a peeling force between the adhesive film 12 before the heat curing and the cover film 2.

Further, the peeling force F2 between the adhesive film 12 and the dicing film 11 is preferably in the range of 0.08 N/100 mm to 10 N/100 mm, more preferably in the range of 0.1 N/100 mm to 6 N/100 mm, and particularly preferably 0.15. N/100mm~0.4N/100mm. When the peeling force F2 is 0.08 N/100 mm or more, for example, when it is frozen at -30 ° C to -10 ° C or at a low temperature of -5 ° C to 10 ° C or stored for a long period of time, the film 11 and the adhesive film 12 are removed. Will shrink at different shrinkage rates, thereby preventing the film 11 from adhering Interfacial peeling occurs between the films 12. In addition, it is possible to prevent wrinkles or winding misalignment, foreign matter incorporation, and voids during conveyance of the film 10 for a semiconductor device or the like. Moreover, wafer scatter or debris can be prevented from occurring when the semiconductor wafer is crystallized. On the other hand, when the peeling force F2 is 10 N/100 mm or less, the peeling property between the adhesive film 12 and the adhesive layer 14 is preferable at the time of picking up the semiconductor wafer, and the pick-up of the semiconductor wafer can be improved. In addition, the adhesive constituting the adhesive layer 14 can be prevented from adhering to the semiconductor wafer to which the adhesive is attached (details are explained below). Further, the numerical range of the peeling force F2 also includes a case where the adhesive layer in the dicing film 11 is an ultraviolet curing type and is hardened to some extent by ultraviolet irradiation in advance. Further, the curing of the adhesive layer by ultraviolet rays may be performed before bonding with the adhesive film 12 or after bonding.

Further, the peeling force F3 between the cover film 2 and the dicing film 11 (adhesive layer 14) is preferably in the range of 0.025 N/100 mm to 5 N/100 mm, more preferably 0.05 N/100 mm to 1 N/100 mm. In the range, it is particularly preferably in the range of 0.1 N/100 mm to 0.5 N/100 mm. When the peeling force F3 is 0.025 N/100 mm or more, for example, when it is frozen at -30 ° C to -10 ° C or at a low temperature of -5 ° C to 10 ° C or stored for a long period of time, the film 11 and the cover film 2 are removed. It shrinks at different shrinkage rates, thereby preventing the film 2 from being caused by the film ridge. Further, in the conveyance of the film 10 for a semiconductor device or the like, wrinkles, winding misalignment, and foreign matter can be prevented from being mixed. On the other hand, since the peeling force F3 is 5 N/100 mm or less, the adhesion between the crystal film 11 and the cover film 2 can be suppressed from becoming strong, and separation in the step of peeling off the cover film can be prevented.

The values of the peeling forces F1 to F3 are measured values in a T-peel test (JIS K6854-3) performed under the conditions of a temperature of 23 ± 2 ° C, a peeling speed of 300 mm / min, and a distance between the chucks of 100 mm. In addition, the tensile tester was manufactured using the product name "Automatic Stereographer AGS-H" (manufactured by Shimadzu Corporation).

The base material 13 in the dicing film 11 is not only the dicing film 11 but also a strength matrix of the film 10 for a semiconductor device. Examples of the substrate 13 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, and homopolymerization. Polyolefin such as propylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, Alternate) polyesters such as copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethanes, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, Polyimine, polyetheretherketone, polyetherimide, polyamine, fully aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, Polyvinyl chloride, polyvinylidene chloride, cellulose resin, fluorenone resin, metal (foil), paper, and the like. Further, when the adhesive layer 14 is of an ultraviolet curing type, the substrate 13 is preferably a substrate having ultraviolet light transmittance in the substrate exemplified above.

Further, examples of the material of the substrate 13 include polymers such as crosslinked bodies of the above resins. The plastic film may be used without extension, or a plastic film which is subjected to uniaxial or biaxial stretching treatment as needed may be used. According to the resin sheet which is given heat shrinkability by the stretching treatment or the like, the substrate 13 can be heated by dicing. The adhesive area of the adhesive layer 14 and the adhesive film 12 is reduced to reduce the ease of recovery of the semiconductor wafer.

The surface of the substrate 13 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, etc., in order to improve adhesion to adjacent layers, retention, and the like. The treatment is carried out by a coating treatment of a primer (for example, an adhesive material to be described later).

The substrate 13 can be appropriately selected from the same or different types of substrates, and a substrate obtained by mixing a plurality of substrates can be used as needed. Further, in order to impart antistatic ability, the base material 13 may be provided with a vapor-deposited layer containing a conductive material having a thickness of about 30 Å to 500 Å, such as a metal, an alloy, or an oxide, on the substrate 13. The substrate 13 may be a single layer or may be a multilayer of two or more types.

The thickness of the substrate 13 is preferably 10 μm to 170 μm, more preferably 50 μm to 150 μm, in order to ensure the transportability of the film and to prevent cracking, breakage, or plastic deformation of the substrate during the expansion of the support substrate in the bonding step. Especially preferred is 100μm~130μm.

The adhesive for forming the adhesive layer 14 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. The pressure-sensitive adhesive is preferably based on an acrylic polymer in terms of cleaning and cleaning properties of an organic solvent such as ultrapure water or alcohol, such as a semiconductor wafer or glass. A polymer based acrylic adhesive.

Examples of the acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third butyl ester, Amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester An alkyl group such as octadecyl ester or eicosyl ester having a carbon number of 1 to 30, particularly a linear or branched alkyl ester having 4 to 18 carbon atoms, and (meth)acrylic acid One or two or more acrylic polymers having a monomer component such as a cycloalkyl ester (for example, a cyclopentyl ester or a cyclohexyl ester). Further, (meth) acrylate means acrylate and/or methacrylate, and the (meth) of the present invention has the same meaning.

The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the (meth)acrylic acid alkyl ester or the (meth)acrylic acid cycloalkyl ester, as needed, in order to improve the cohesive force, heat resistance, and the like. . Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and butyl. a carboxyl group-containing monomer such as an olefinic acid; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, or (meth)acrylic acid 4-hydroxybutyl ester, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, a hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methylpropanesulfonate a sulfonic acid group-containing monomer such as an acid, (meth) acrylamide, propanesulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene phthaloxy naphthalene sulfonic acid; 2-hydroxyethyl acrylonitrile a phosphate group-containing monomer such as a phosphate ester; acrylamide, acrylonitrile, or the like. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers is higher It is preferably 40% by weight or less of the total monomer component.

Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization in order to carry out crosslinking. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl Diol (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate Epoxy (meth) acrylate, polyester (meth) acrylate, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer to be used is preferably 30% by weight or less based on the total monomer component in terms of adhesion characteristics and the like.

The above acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more kinds of monomers. The polymerization can also be carried out by any one of solution polymerization, emulsification superposition, bulk polymerization, suspension polymerization, and the like. In terms of preventing contamination of the cleaned adherend, etc., it is preferred that the content of the low molecular weight substance is small. In this regard, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

Further, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used. A specific method of the external crosslinking method is a method in which a reaction is carried out by adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent. External when using external crosslinker The amount of the crosslinking agent to be used can be appropriately determined depending on the balance with the base polymer to be crosslinked, and further depending on the use as the binder. It is usually preferably 5 parts by weight or less, more preferably 0.1 parts by weight to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, in addition to the above components, additives such as various tackifiers and anti-aging agents known in the prior art may be used as the adhesive.

The adhesive layer 14 may be formed of an ultraviolet curable adhesive. The ultraviolet curable adhesive can easily increase the degree of crosslinking by irradiation of ultraviolet rays, and can be irradiated only by the portion corresponding to the attachment portion of the semiconductor wafer of the adhesive layer 14. Ultraviolet light can set the difference in adhesion to other parts.

The tensile modulus at 23 ° C after the ultraviolet curing of the adhesive layer 14 is preferably in the range of 1 MPa to 170 MPa, more preferably in the range of 5 MPa to 100 MPa. By setting the tensile elastic modulus to 1 MPa or more, good pickup property can be maintained. On the other hand, by making the tensile elastic modulus 170 MPa or less, it is possible to prevent wafer scattering during dicing. Further, the irradiation of the ultraviolet rays is preferably performed by, for example, irradiating the integrated light amount with ultraviolet rays of 30 mJ/cm ² to 1000 mJ/cm ² . When the cumulative amount of ultraviolet light is 30 mJ/cm ² or more, the adhesive layer 14 can be sufficiently cured, and excessive adhesion to the adhesive film 12 can be prevented. As a result, good pickup properties can be exhibited at the time of picking up the semiconductor wafer. In addition, the adhesion of the adhesive layer 14 to the adhesive film 12 (so-called paste residue) after picking up can be prevented. On the other hand, when the cumulative amount of ultraviolet light irradiation is 1000 mJ/cm ² or less, it is possible to prevent the adhesion of the adhesive layer 14 from being extremely lowered, thereby preventing the peeling from occurring between the adhesive film 12 and the installation. The shedding of the semiconductor wafer. In addition, during the dicing of the semiconductor wafer, wafer scatter can be prevented from occurring in the formed semiconductor wafer.

The value of the tensile elastic modulus of the above adhesive layer is obtained by the following measurement method. That is, the adhesive layer 14 was cut into a sample having a length of 30.0 mm, a width of 10.0 mm, and a cross-sectional area of 0.1 mm ² to 0.5 mm ² . The sample was subjected to a tensile test in the MD direction at a measurement temperature of 23 ° C, a distance between the chucks of 20 mm, and a tensile speed of 50 mm / min, and the amount of change (mm) caused by the elongation of the sample was measured. Thereby, in the obtained SS (Strain-Strength) curve, a tangential line is drawn on the initial rising portion of the curve, and the tensile strength corresponding to the tangential elongation of 100% is divided by the sectional area, and the obtained value is obtained. The tensile modulus of elasticity as the layer of adhesive.

Here, the adhesive film 12 is formed only in the attached portion of the semiconductor wafer in accordance with the shape of the semiconductor wafer in a plan view. Therefore, by curing the ultraviolet curable adhesive layer 14 in conformity with the shape of the adhesive film 12, the adhesion of the portion corresponding to the semiconductor wafer attaching portion can be easily reduced. Since the adhesive film 12 is attached to the above-described portion where the adhesive strength is lowered, the interface between the above-mentioned portion of the adhesive layer 14 and the adhesive film 12 has a property of being easily peeled off at the time of picking up. On the other hand, the portion not irradiated with ultraviolet rays has a sufficient adhesive force.

As described above, the portion of the adhesive layer 14 formed of the uncured ultraviolet curable adhesive is adhered to the adhesive film 12, and the holding force at the time of crystal cutting can be ensured. Thus, the ultraviolet curable adhesive can be supported in a wafer-like semiconductor wafer (semiconductor wafer) in a well-balanced manner of adhesion and peeling. The adhesive film 12 adhered to the adherend such as a substrate. When the adhesive film 12 is laminated only on the attached portion of the semiconductor wafer, the wafer ring is fixed in a region where the adhesive film 12 is not laminated.

The ultraviolet curable adhesive can be an ultraviolet curable adhesive having an ultraviolet curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness without any particular limitation. In the ultraviolet-curable adhesive, for example, an ultraviolet-curable monomer component or an oligomer component is added to a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive. Hardened adhesive.

Examples of the ultraviolet curable monomer component to be blended include a urethane oligomer, a (meth)acrylic acid urethane, a trimethylolpropane tri(meth)acrylate, and a tetramethylol group. Methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1 , 4-butanediol di(meth)acrylate, and the like. Further, examples of the ultraviolet curable oligomer component include various oligomers such as a urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, ultraviolet-curable oligomer component. The molecular weight is preferably in the range of about 100 to 30,000. The amount of the ultraviolet curable monomer component or the oligomer component can be appropriately determined according to the type of the above-mentioned adhesive layer, and the amount of adhesion of the adhesive layer can be appropriately determined. It is usually from 5 parts by weight to 500 parts by weight, preferably from 40 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the binder.

In addition, the ultraviolet curable adhesive is in addition to the additive type described above. In addition to the ultraviolet curable adhesive, an intrinsic ultraviolet curable adhesive using a polymer having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal as a base polymer may be mentioned. Since the intrinsic ultraviolet curable adhesive does not need to contain or contain a large amount of an oligomer component as a low molecular weight component, the oligomer component or the like does not move to the binder over time, and a stable layer structure can be formed. The layer of adhesive is therefore preferred.

The base polymer having a carbon-carbon double bond can be a base polymer having a carbon-carbon double bond and having adhesiveness without any particular limitation. Such a base polymer is preferably a base polymer having an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

The introduction method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed, and the molecular design of introducing a carbon-carbon double bond into the polymer side chain is easy. For example, a method in which a monomer having a functional group and an acrylic polymer are copolymerized in advance, and a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is maintained in maintaining a carbon-carbon double bond. The condensation or addition reaction is carried out in an ultraviolet curable state.

Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferred in terms of ease of reaction tracking. Further, when a combination of the above-mentioned functional groups is used to form a combination of the acrylic polymer having the above carbon-carbon double bond, the functional group may be located on either side of the acrylic polymer and the above compound, preferably Preferably, the acrylic polymer has a hydroxyl group and the above compound The case of having an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methacryloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate. Wait. Further, the acrylic polymer may be copolymerized by using the hydroxyl group-containing monomer exemplified above, an ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether, or the like. The product obtained.

The above-mentioned intrinsic ultraviolet curable adhesive can be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, and the ultraviolet curable monomer component can be blended to the extent that the properties are not deteriorated. Or oligomer component. The ultraviolet curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 parts by weight to 10 parts by weight, per 100 parts by weight of the base polymer.

The ultraviolet curable adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. The photopolymerization initiator may, for example, be 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2 An α-keto alcohol compound such as methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropane-1 and other acetophenone compounds; benzoin ether, Benzoin ether compound such as benzoin isopropyl ether, fennel acetoin methyl ether; ketal compound such as benzoin dimethyl ketal; aromatic sulfonium chloride compound such as 2-naphthalene sulfonium chloride; 1-benzophenone- Photoactive lanthanide compound such as 1,1-propanedione-2-(O-ethoxycarbonyl)anthracene; benzophenone, benzhydrylbenzoic acid, 3,3'-dimethyl-4-methyl a benzophenone compound such as oxybenzophenone; 9-thioxanthone, 2-chloro-thioxanthone, 2-methyl- Thioxanthone, 2,4-dimethyl-thioxanthone, isopropyl-thioxanthone, 2,4-dichloro-thioxanthone, 2,4-diethyl-thioxanthone, 2,4 a thioxanthone compound such as diisopropyl-thioxanthone; camphorquinone; a halogenated ketone; a fluorenylphosphine oxide; a decyl phosphate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 part by weight to 20 parts by weight per 100 parts by weight of the base polymer such as the acrylic polymer constituting the binder.

The ultraviolet curable adhesive layer 14 may optionally contain a compound colored by ultraviolet irradiation. By including the compound colored by ultraviolet irradiation in the adhesive layer 14, only the portion irradiated with the hydroxy ultraviolet light can be colored. Thereby, it is possible to directly visually recognize whether or not the adhesive layer 14 is irradiated with ultraviolet rays, and it is easy to recognize the semiconductor wafer attaching portion, and the bonding of the semiconductor wafer is easy. Further, when the semiconductor wafer is detected by a photo sensor or the like, the detection accuracy is improved, and malfunction does not occur at the time of picking up the semiconductor wafer.

The compound colored by ultraviolet irradiation is a colorless or light color before ultraviolet irradiation, but is colored by ultraviolet irradiation. A preferred specific example of the compound is exemplified by a leuco dye. As the leuco dye, a conventional triphenylmethane-based, fluoran-based, phenothiazine-based, gold-amine-based, spiropyran-based colorless fuel can be preferably used. Specific examples thereof include 3-[N-(p-tolylamino)]-7-anilinofluoran, 3-[N-(p-tolyl)-N-methylamino]-7-anilinofluoran. , 3-[N-(p-tolyl)-N-ethylamino]-7-anilinofluoran, 3-diethylamino-6-methyl-7-anilinofluoran, crystal violet Ester, 4,4',4"-tris-(dimethylamino)triphenylmethanol, 4,4',4"-tris-(dimethylamino)triphenylmethane, and the like.

The coloring agent which is preferably used together with the leuco dyes may, for example, be an electron acceptor such as an initial polymer of a phenol formaldehyde resin, an aromatic carboxylic acid derivative or an activated clay which has been used in the past, and In the case, various known color formers may be used in combination.

Such a compound which is colored by ultraviolet irradiation may be contained in the ultraviolet curable adhesive after being temporarily dissolved in an organic solvent or the like, and may be contained in the adhesive as a fine powder. The ratio of use of the compound is preferably 10% by weight or less, preferably 0.01% by weight to 10% by weight, more preferably 0.5% by weight to 5% by weight in the adhesive layer 14. If the proportion of the compound exceeds 10% by weight, the ultraviolet rays irradiated to the adhesive layer 14 are excessively absorbed by the compound, and thus the hardening of the portion of the adhesive layer 14 corresponding to the semiconductor wafer attaching portion becomes insufficient. The adhesion is not sufficiently reduced. On the other hand, in order to sufficiently color, it is preferable to set the ratio of this compound to 0.01 wt% or more.

Further, when the adhesive layer 14 is formed of an ultraviolet curable adhesive, a substrate that blocks all or a part of a portion other than the portion corresponding to the semiconductor wafer attaching portion of the substrate 13 is used. After the ultraviolet curable adhesive layer 14 is formed on the substrate, ultraviolet rays are irradiated to cure the portion corresponding to the semiconductor wafer attaching portion, and the portion where the adhesive force is lowered can be formed. The light-shielding material can be made into a light-shielding material which can become a photomask on a support film by printing, vapor deposition, etc. According to this manufacturing method, the film 10 for a semiconductor device of the present invention can be efficiently produced.

Further, when ultraviolet rays are irradiated, it is preferable to cure the ultraviolet curable adhesive layer 14 by some methods when causing a hardening failure due to oxygen. The surface blocks oxygen (air). For example, a method of covering the surface of the above-mentioned adhesive layer 14 with a spacer or a method of irradiating ultraviolet rays in a nitrogen atmosphere may be mentioned.

The thickness of the adhesive layer 14 is preferably from 1 μm to 50 μm, more preferably from 2 μm to 30 μm, even more preferably from 5 μm to 25 μm, in terms of prevention of defects on the cut surface of the wafer or adhesion of the adhesive film.

In addition, the total thickness of the base material 13 and the thickness of the adhesive layer 14 , that is, the thickness Tb of the crystal cutting film 11 , the viewpoint of the transportability, the prevention of defects on the wafer-cut surface, or the fixation of the adhesive film, and the viewpoint of pick-up property In particular, it is preferably 25 μm to 180 μm, more preferably 50 μm to 150 μm, still more preferably 100 μm to 130 μm.

The adhesive film 12 is a layer having an adhesive function, and the constituent material of the adhesive film 12 may be a thermoplastic resin or a thermosetting resin, or a thermoplastic resin may be used alone.

The tensile storage elastic modulus of the adhesive film 12 at 23 ° C before curing is preferably in the range of 50 MPa to 5000 MPa, more preferably in the range of 300 MPa to 4000 MPa, and particularly preferably in the range of 500 MPa to 3000 MPa. By setting the tensile storage elastic modulus to 50 MPa or more, it is possible to prevent pickup failure due to adhesion of the adhesive which is thermally melted by friction with the crystal cutter to the semiconductor wafer during the dicing of the semiconductor wafer. On the other hand, by setting the tensile storage elastic modulus to 5000 MPa or less, the adhesion to the mounted semiconductor wafer or the bonded crystal substrate can be improved.

The value of the above tensile storage elastic modulus is a value obtained by the following measurement method. That is, the adhesive group is applied to the release liner subjected to the release treatment. The solution of the resultant was dried and formed into an adhesive film 12 having a thickness of 100 μm. The tensile storage elastic modulus of this adhesive film 12 at 23 ° C before the adhesion of the adhesive film 12 was measured using a viscoelasticity measuring device (manufactured by Rheometrics Co., Ltd.: Model: RSA-II). More specifically, the sample size was set to a length of 30.0 mm, a width of 5.0 mm, and a thickness of 0.1 mm, and the measurement sample was placed on a film tensile measurement jig at a frequency of 10.0 Hz in a temperature range of -30 ° C to 280 ° C. The measurement was carried out under the conditions of a strain of 0.025% and a temperature increase rate of 10 ° C /min.

Examples of the above thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutadiene. Resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, polyethylene terephthalate (PET) or poly A saturated polyester resin such as butylene terephthalate (PBT), a polyamidimide resin, or a fluororesin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is less ionic impurities and has high heat resistance and ensures the reliability of a semiconductor device is particularly preferable.

The acrylic resin is not particularly limited, and one or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18, may be used. The polymer of the component, etc. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, tert-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, cyclohexyl group, and 2- Ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, Stearyl, octadecyl, or dodecyl, and the like.

Further, the other monomer forming the above polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and fumaric acid. Or various carboxyl group-containing monomers such as crotonic acid, various acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl methacrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, (meth) acrylate 12- Various hydroxyl group-containing monomers such as hydroxylauryl ester or (4-hydroxymethylcyclohexyl)-methyl acrylate, styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methyl Various sulfonic acid group-containing monomers such as propanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalenesulfonic acid, or 2-hydroxyethyl Various phosphate group-containing monomers such as acryloylphosphoryl phosphate.

Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, an anthrone resin, or a thermosetting polyimide resin. These thermosetting resins may be used singly or in combination of two or more. Particularly preferred is an epoxy resin containing a small amount of ionic impurities such as corrosion of a semiconductor wafer. Further, the curing agent of the epoxy resin is preferably a phenol resin.

The epoxy resin is not particularly limited as long as it is used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, and brominated bisphenol A type can be used. Hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolac type, o-cresol novolac Type, trihydroxyphenylmethane type, tetraphenol ethane type, etc., difunctional epoxy resin or polyfunctional epoxy resin, or carbendazim type, triglycidyl isocyanurate type or glycidylamine Type epoxy resin. These epoxy resins may be used singly or in combination of two or more. Among these epoxy resins, a varnish type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin or a tetraphenol ethane type epoxy resin is particularly preferred. The reason is that these epoxy resins are highly reactive with a phenol resin as a curing agent, and are excellent in heat resistance and the like.

Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a mercapto group. A novolac type phenol resin such as a phenol novolak resin, a soluble phenol resin, or a polyhydroxystyrene such as polyparaxyl styrene. These phenol resins may be used singly or in combination of two or more. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferred. The reason is that the connection reliability of the semiconductor device can be improved.

The blending ratio of the epoxy resin to the phenol resin is preferably, for example, such that the hydroxyl group in the phenol resin is from 0.5 equivalent to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably, the hydroxyl group in the phenol resin is from 0.8 equivalents to 1.2 equivalents. That is, if the blending ratio of the two is outside the above range, a sufficient curing reaction is not performed, and the properties of the cured epoxy resin are likely to deteriorate.

Further, in the present embodiment, the adhesive film 12 containing an epoxy resin, a phenol resin, and an acrylic resin is particularly preferable. These resins have low ionic impurities and high heat resistance, so that the reliability of the semiconductor wafer can be ensured. this The mixing ratio at the time is 10 parts by weight to 200 parts by weight based on 100 parts by weight of the acrylic resin component and the epoxy resin and the phenol resin.

In the adhesive film 12 of the present embodiment, a polyfunctional compound that reacts with a functional group at the end of the molecular chain of the polymer or the like can be added as a crosslinking agent at the time of production in order to crosslink to some extent in advance. Thereby, the adhesive property at a high temperature is improved, and the heat resistance is improved.

The above crosslinking agent may be a previously known crosslinking agent. In particular, polyisocyanate compounds such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of a polyhydric alcohol and a diisocyanate are more preferable. The amount of the crosslinking agent to be added is usually preferably 0.05 parts by weight to 7 parts by weight based on 100 parts by weight of the above polymer. If the amount of the crosslinking agent is more than 7 parts by weight, the adhesion is lowered and the crosslinking is poor. On the other hand, when the amount of the crosslinking agent is less than 0.05 part by weight, the cohesive strength is insufficient and it is not preferable. Further, other polyfunctional compounds such as an epoxy resin may be contained together with such a polyisocyanate compound as needed.

Further, the inorganic filler can be appropriately formulated according to the use of the adhesive film 12. The formulation of the inorganic filler can impart conductivity or improve thermal conductivity, adjust elastic modulus, and the like. Examples of the inorganic filler include ceramics such as cerium oxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride, and aluminum, copper, silver, gold, nickel, and chromium. Various inorganic powders such as metals such as tin, zinc, palladium, and solder, or alloys, and other carbons. These inorganic fillers can be used singly or in combination of two or more. Among them, cerium oxide is preferably used, and particularly, molten cerium oxide is used. Further, the average particle diameter of the inorganic filler is preferably in the range of 0.01 μm to 80 μm.

The amount of the inorganic filler to be added is preferably from 0 to 80 parts by weight, more preferably from 0 to 70 parts by weight, per 100 parts by weight of the organic component.

Further, other additives may be appropriately formulated in the adhesive film 12 as needed. Examples of other additives include a flame retardant, a decane coupling agent, an ion scavenger, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These flame retardants may be used singly or in combination of two or more. Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropylmethyl group. Diethoxydecane, etc. These compounds may be used singly or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and barium hydroxide. These ion scavengers can be used singly or in combination of two or more.

The thickness of the adhesive film 12 is not particularly limited, and is, for example, about 5 μm to 100 μm, preferably about 5 μm to 70 μm.

The film 10 for a semiconductor device can have an antistatic property. Thereby, it is possible to prevent static electricity from being generated when the film 10 for a semiconductor device is adhered or at the time of peeling, or to cause destruction of the circuit due to charging of the semiconductor wafer or the like. The antistatic property can be imparted by adding an antistatic agent or a conductive material to the substrate 13, the adhesive layer 14, or the adhesive film 12, and a charge transporting complex or a metal film is attached to the substrate 13. The conductive layer or the like is carried out in an appropriate manner. These methods are preferably such that it is difficult to generate impurity ions that may deteriorate the semiconductor wafer. Examples of the conductive material (conductive filler) formulated to impart conductivity, improve thermal conductivity, and the like include silver, aluminum, gold, copper, nickel, and conductive. A spherical, acicular, or flaky metal powder such as gold, a metal oxide such as alumina, amorphous carbon black, graphite, or the like. However, the adhesive film 12 is preferably non-conductive in terms of achieving no leakage.

The adhesive film 12 is protected by the cover film 2. The cover film 2 has a function as a protective material for protecting the adhesive film 12 until it is put to practical use. The cover film 2 is peeled off when the semiconductor wafer is attached to the adhesive film 12 of the adhesive film attached to the wafer. The cover film 2 may also be coated with polyethylene terephthalate (PET), polyethylene, polypropylene, or a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Plastic film or paper.

The thickness Ta of the cover film 2 is preferably from 10 μm to 100 μm, more preferably from 15 μm to 75 μm, even more preferably from 25 μm to 50 μm, from the viewpoint of workability and transportability.

Next, a method of manufacturing the film 10 for a semiconductor device of the present embodiment will be described below.

The method for producing the film 10 for a semiconductor device of the present embodiment includes the steps of forming the adhesive layer 14 on the substrate 13 to form the diced film 11, and forming the adhesive film 12 on the substrate spacer 22; a step of punching the film 12 into a shape conforming to the shape of the attached semiconductor wafer; a step of laminating the adhesive layer 14 of the dicing film 11 and the adhesive film 12 as a bonding surface; and the dicing film 11 a step of punching into a circular shape corresponding to the annular frame; a step of forming the adhesive film 1 attached to the wafer by peeling off the substrate spacer 22 on the adhesive film 12; and fitting at a specific interval on the cover film 2 The step of attaching the adhesive film 1 of the wafer.

The manufacturing process of the dicing film 11 is performed, for example, as follows. first First, the substrate 13 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an expansion extrusion method in a sealed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.

Next, after applying a solution of the adhesive composition on the substrate 13 to form a coating film, the coating film is dried under specific conditions (heat-crosslinking if necessary) to form the adhesive layer 14. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be appropriately set depending on the thickness of the coating film, the material, and the like. Specifically, it is carried out, for example, at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, after the adhesive composition is applied onto the first spacer 21 to form a coating film, the coating film is dried under the above drying conditions to form the adhesive layer 14. Then, the adhesive layer 14 is bonded to the first spacer 21 on the substrate 13. Thereby, the dicing film 11 which protects the adhesive layer 14 by the 1st spacer 21 is manufactured (refer FIG. 3 (a)). The produced diced film 11 may have a long form wound in a roll shape. At this time, it is preferable that the dicing film 11 is subjected to stretching tension in the longitudinal direction or the width direction of the dicing film 11 so as not to cause slack, winding misalignment, or misalignment, and to perform winding. However, due to the application of the tensile tension, the dicing film 11 is wound into a roll shape in a state in which residual strain remains. Further, when the dicing film 11 is taken up, the dicing film 11 may be stretched by applying the above-described tensile tension, but the winding is not performed for the purpose of the stretching operation.

When an adhesive layer containing an ultraviolet curable adhesive and previously ultraviolet-cured is used as the adhesive layer 14, it is formed as follows. That is, after the ultraviolet curable adhesive composition is applied onto the substrate 13 to form a coating film, the coating film is dried under specific conditions (heating and crosslinking as necessary) to form an adhesive layer. The coating method, coating conditions, and drying conditions can be carried out in the same manner as described above. Further, after the ultraviolet curable adhesive composition is applied onto the first spacer 21 to form a coating film, the coating film is dried under the above drying conditions to form an adhesive layer. Then, the adhesive layer is transferred onto the substrate 13. The adhesive layer is then irradiated with ultraviolet light under specific conditions. The irradiation conditions of the ultraviolet rays are not particularly limited, but it is usually preferably in the range of 50 mJ/cm ² to 800 mJ/cm ² , more preferably in the range of 100 mJ/cm ² to 500 mJ/cm ² . The peeling force F2 between the adhesive film 12 and the dicing film 11 can be controlled within a range of 0.08 N/100 mm to 10 N/100 mm by adjusting the integrated light amount within the above numerical range. When the irradiation with ultraviolet rays is less than 30 mJ/cm ² , the curing of the adhesive layer 14 may be insufficient, and the peeling force with the adhesive film 12 may become excessive. As a result, the adhesion to the adhesive film is increased, and the pickup property is lowered. And after picking up, there is a case where a paste remains on the adhesive film. On the other hand, when the integrated light amount exceeds 1000 mJ/cm ² , the peeling force with the adhesive film 12 may become too small. As a result, there is a case where interface peeling occurs between the adhesive layer 14 and the adhesive film 12. As a result, there is a case where the wafer is scattered during the dicing of the semiconductor wafer. Further, there is a case where thermal damage is caused to the substrate 13. Further, the hardening of the adhesive layer 14 is excessively performed to make the tensile elastic modulus excessively large, and the elongation is lowered. Further, the ultraviolet irradiation can be performed after the bonding step with the adhesive film 12 to be described later. At this time, ultraviolet irradiation is preferably performed from the side of the substrate 13.

The manufacturing process of the adhesive film 12 is carried out in the manner described below. That is, the adhesive composition solution for forming the adhesive film 12 is applied onto the substrate spacer 22 so as to have a specific thickness to form a coating film. Then, the coated film is dried under specific conditions to form an adhesive film 12. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be appropriately set depending on the thickness of the coating film, the material, and the like. Specifically, it is carried out, for example, at a drying temperature of 70 to 160 ° C and a drying time of 1 minute to 5 minutes. Further, after the adhesive composition is applied onto the second spacer 23 to form a coating film, the coating film can be dried under the above drying conditions to form the adhesive film 12. Then, the adhesive film 12 and the second spacer 23 are bonded together on the substrate spacer 22. Thereby, a laminated film in which the adhesive film 12 and the second spacer 23 are sequentially laminated on the substrate spacer 22 is produced (see FIG. 3(b)). This laminated film may have a long form wound in a roll shape. At this time, it is preferable to apply a stretching tension to the longitudinal direction or the width direction of the adhesive film 12 so as not to cause slack, misalignment or misalignment of the adhesive film 12, and to wind it.

Next, the adhesive film 12 is punched into a shape conforming to the shape of the attached semiconductor wafer, and bonded to the dicing film 11. Thereby, the adhesive film 1 attached to the wafer is obtained. That is, the first spacer 21 is peeled off from the dicing film 11, and the second spacer 23 is peeled off from the punched adhesive film 12, and the adhesive film 12 and the adhesive layer 14 are bonded to each other. Bonding (refer to (c) of Fig. 3). At this time, tensile stress is applied to the peripheral portion of at least one of the film of the dicing film 11 or the adhesive film 12, and pressure bonding is performed. Further, when the dicing film 11 is in the form of a roll wound into a roll, the dicing film 11 is preferably not diced. The film 11 is conveyed by applying a tensile force as much as possible in the longitudinal direction. The reason is to suppress the tensile residual strain of the film. However, from the viewpoint of preventing the slack film 11 from being slack, winding misalignment, misalignment, voids (bubbles), etc., tensile tension can be applied in the range of 10N to 25N. When the tensile tension is within this range, the dicing film 11 can prevent interfacial peeling between the dicing film 11 and the adhesive film 12 even if residual tensile strain remains.

Further, the bonding of the dicing film 11 and the adhesive film 12 can be performed, for example, by pressure bonding. In this case, the laminating temperature is not particularly limited, and is usually preferably from 30 ° C to 80 ° C, more preferably from 30 ° C to 60 ° C, and particularly preferably from 30 ° C to 50 ° C. Further, the linear pressure is not particularly limited, but is usually preferably 0.1 kgf/cm to 20 kgf/cm, more preferably 1 kgf/cm to 10 kgf/cm. When the glass transition temperature of the organic component is in the range of -20 ° C to 50 ° C, the lamination temperature and/or the linear pressure are respectively adjusted to the above numerical range, and bonded to the dicing film 11 The peeling force F2 between the adhesive film 12 and the dicing film 11 can be controlled within a range of 0.08 N/100 mm to 10 N/100 mm. Here, for example, by increasing the lamination temperature within the above range, the peeling force F2 between the dicing film 11 and the adhesive film 12 can be increased. Further, by increasing the linear pressure within the above range, the peeling force F2 can also be increased.

Next, the substrate spacer 22 on the adhesive film 12 is peeled off, and tensile stress is applied and bonded to the cover film 2. Next, the crystal film 11 is set at a specific interval and punched into a circular shape corresponding to the ring frame. By this, the film 10 for a semiconductor device in which the pre-cut wafer-attached adhesive film 1 is provided at a predetermined interval and laminated on the cover film 2 is produced.

Adhesion of the adhesive film 12 and the cover film 2 in the adhesive film 1 attached to the wafer It is preferably carried out by pressure bonding. In this case, the laminating temperature is not particularly limited, but is usually preferably 20 ° C to 80 ° C, more preferably 20 ° C to 60 ° C, and particularly preferably 20 ° C to 50 ° C. Further, the linear pressure is not particularly limited, but is usually preferably 0.1 kgf/cm to 20 kgf/cm, more preferably 0.2 kgf/cm to 10 kgf/cm. When the glass transition temperature of the organic component is in the range of -20 ° C to 50 ° C, the lamination temperature and/or the linear pressure are respectively adjusted to the above numerical range, and bonded to the cover film 2, whereby The peeling force F1 between the adhesive film 12 and the cover film 2 is controlled to be in the range of 0.025 N/100 mm to 0.075 N/100 mm. Here, for example, by increasing the lamination temperature within the above range, the peeling force F1 between the adhesive film 1 attached to the wafer and the cover film 2 can be increased. Further, by increasing the linear pressure within the above range, the peeling force F1 can also be increased. Further, it is preferable that the cover film 2 is conveyed without applying a tensile force as much as possible in the longitudinal direction of the cover film 2. The reason is to suppress the tensile residual strain of the cover film 2. However, from the viewpoint of preventing slack or winding misalignment, misalignment, voids (bubbles), and the like of the cover film 2, tensile tension can be applied in the range of 10N to 25N. When the tensile tension is within this range, even if the tensile residual strain remains in the cover film 2, the film bulging phenomenon of the cover film 2 with respect to the adhesive film 1 attached to the wafer can be prevented.

Further, the first spacer 21 bonded to the adhesive layer 14 of the dicing film 11, the substrate spacer 22 of the adhesive film 12, and the second spacer 23 adhered to the adhesive film 12 are not provided. Particularly limited, a previously known release-treated film can be used. Each of the first spacer 21 and the second spacer 23 has a function as a protective material. Further, the substrate spacer 22 has a function as a substrate when the adhesive film 12 is transferred onto the adhesive layer 14 of the dicing film 11. The material constituting each of the films is not particularly limited, and a conventionally known material can be used. Specific examples include, for example, polyethylene terephthalate (PET), polyethylene, polypropylene, or surface coating by a release agent such as a fluorine-based release agent or a long-chain alkyl ester release agent. Plastic film or paper.

The adhesive film of the present invention can be used as a film for a die-bonding film or a flip-chip type semiconductor back surface. The film for the flip chip type semiconductor back surface is used for forming a back surface of a semiconductor element (for example, a semiconductor wafer) which is flip-chip bonded to a bonded body (for example, a lead frame or a circuit board).

Instance

Preferred examples of the invention are exemplarily described in detail below. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the present invention to these examples unless otherwise specified. In addition, parts represent parts by weight.

(Example 1)

<Production of Sliced Film>

88.8 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") and 2-hydroxyethyl acrylate (hereinafter referred to as "HEA") were placed in a reaction vessel equipped with a cooling tube, a nitrogen gas introduction tube, a thermometer, and a stirring device. Further, 11.2 parts, 0.2 parts of benzamidine peroxide and 65 parts of toluene were subjected to polymerization treatment at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer A having a weight average molecular weight of 850,000. The molar ratio of 2EHA to HEA is 100 mol: 20 mol. Further, the weight average molecular weight is a value measured by gel permeation chromatography (GPC) and calculated by polystyrene conversion.

Adding 2-methylpropenyloxyethyl group to the acrylic polymer A 12 parts of isocyanate (hereinafter referred to as "MOI") (80 mol% with respect to HEA) was subjected to an addition reaction treatment at 50 ° C for 48 hours in an air stream to obtain an acrylic polymer A'.

Next, 8 parts of an isocyanate-based crosslinking agent (trade name "Coronate L", Nippon Polyurethane (NIPPON POLYURETHANE)) and a photopolymerization initiator (product) were added to 100 parts of the acrylic polymer A'. 5 parts of "Irgacure 651" and Ciba Specialty Chemicals Co., Ltd.) were used to make an adhesive solution.

The adhesive solution prepared above was applied to the surface of the PET release liner (first spacer) subjected to the anthrone treatment, and heated and crosslinked at 120 ° C for 2 minutes to form an adhesive having a thickness of 10 μm. Floor. Next, a polyolefin film (substrate) having a thickness of 100 μm was bonded to the surface of the adhesive layer. Then, it was stored at 50 ° C for 24 hours.

Next, the PET release liner was peeled off, and only a portion (a circular shape having a diameter of 220 mm) corresponding to the semiconductor wafer attachment portion (circular shape having a diameter of 200 mm) of the adhesive layer was directly irradiated with ultraviolet rays. Thereby, the diced film of this example was produced. In addition, the irradiation conditions are as follows. Further, the tensile elastic modulus of the adhesive layer was measured by the method described later, and as a result, the tensile elastic modulus was 19.7 MPa.

<Ultraviolet irradiation conditions>

Ultraviolet (UV) irradiation device: high pressure mercury lamp

Cumulative amount of ultraviolet radiation: 500mJ/cm ²

Output: 120W

Irradiation intensity: 200mW/cm ²

<Production of Adhesive Film>

Isocyanate is cross-linked to 100 parts of an acrylate-based polymer (manufactured by K.K., Ltd., trade name; Paracron W-197CM, Tg: 18 ° C) containing ethyl acrylate-methyl methacrylate as a main component. Binding agent (manufactured by Japan Polyurethane Co., Ltd., trade name; Coronate HX) 2 parts, epoxy resin (manufactured by JER), 50 parts, phenol resin (Mitsui Chemical Co., Ltd., trade name; Milex XLC) -3L) 10 parts of spherical cerium oxide (manufactured by Admatechs, trade name; SO-25R, average particle diameter 0.5 μm) as an inorganic filler, 30 parts dissolved in methyl ethyl ketone, and adjusted to concentration It is 18.0 wt%. Further, when the tensile elastic modulus of the adhesive film before thermal curing was measured by the method described later, the tensile elastic modulus was 531 MPa.

The solution of the adhesive composition was applied onto a release treatment film (substrate separator) by a spray coater to form a coating layer, and the coating layer was directly sprayed at 150 ° C, 10 m / s. Allow hot air to dry for 2 minutes. Thereby, an adhesive film having a thickness of 25 μm was formed on the release-treated film. Further, the release treatment film (base material spacer) was a release treatment film obtained by subjecting a release film to a polyethylene terephthalate film (thickness: 50 μm).

<Production of Adhesive Film Attached to Wafer>

Next, the adhesive film was cut into a circular shape having a diameter of 230 mm, and the adhesive layer of the above-mentioned dicing film was bonded to an adhesive film cut into a circular shape. The bonding is performed by using a nip roll, and the bonding condition is a laminating temperature of 50 ° C and a linear pressure of 3 kgf / cm, and the substrate spacer on the adhesive film is peeled off and bonded to form a release-treated film ( Cover film) Polyethylene terephthalate film (thickness 38 μm). At this time, in order to prevent occurrence of misalignment, voids (bubbles), and the like, a tension adjusting roller is used to apply a tensile tension of 17 N to the MD in the MD direction, and the lamination temperature is not applied and the bonding is performed at a linear pressure of 2 kgf/cm. And make an adhesive film attached to the wafer.

<Production of Film for Semiconductor Device>

Then, the dicing film was punched into a circular shape having a diameter of 270 mm so that the adhesive film was centered, thereby obtaining a film for a semiconductor device of the present example in which an adhesive film of 200 wafers was bonded at intervals of 10 mm. .

(Example 2)

<Production of Sliced Film>

The dicing film of this example was the same dicing film as in the above Example 1.

<Production of Adhesive Film>

Isocyanate crosslinking with respect to 100 parts of an acrylate-based polymer (manufactured by K.K., Ltd., trade name; Paracron W-197C, Tg: 18 ° C) containing ethyl acrylate-methyl methacrylate as a main component Agent (manufactured by Japan Polyurethane Co., Ltd., trade name; Coronate HX) 4 parts, epoxy resin (JER (manufactured by JER), Epikote 1004) 30 parts, phenol resin (Mitsui Chemical Co., Ltd., trade name: Milex XLC- 3 L) 15 parts of spherical cerium oxide (manufactured by Admatechs, trade name; SO-25R, average particle diameter 0.5 μm) as an inorganic filler, 60 parts dissolved in methyl ethyl ketone, and adjusted to a concentration of 18.0 wt%. Further, when the tensile elastic modulus of the adhesive film before thermal curing was measured by the method described later, the tensile elastic modulus was 224 MPa.

<Production of Film for Semiconductor Device>

The film for a semiconductor device of the second example was bonded to a film of a polyethylene terephthalate film (thickness: 38 μm) which was subjected to an oxime release treatment in the same manner as in the above Example 1 except that the above-mentioned adhesive film was used. Membrane for the device.

(Example 3)

<Production of Sliced Film>

In the dicing film of the present example, the thickness of the adhesive layer after drying was set to 5 μm, the thickness of the polyolefin film (substrate) to be used was 40 μm, and the total thickness of the diced film was 45 μm. The dicing film of the present example was produced in the same manner as in the above Example 1.

<Production of Adhesive Film>

The adhesive film of this example was the same adhesive film as that of the above Example 1.

<Production of Film for Semiconductor Device>

In the film for a semiconductor device of the present Example 3, a film of a polyethylene terephthalate film (100 μm thick) which was subjected to an oxime release treatment was bonded in the same manner as in the above Example 1 except that the above-mentioned diced film was used. A film for a semiconductor device.

(Example 4)

<Production of Sliced Film>

In the dicing film of the present example, the thickness of the adhesive layer after drying was set to 10 μm, the thickness of the polyolefin film (substrate) to be used was 150 μm, and the total thickness of the diced film was 160 μm. The dicing film of the present example was produced in the same manner as in the above Example 1.

<Production of Adhesive Film>

The adhesive film of this example was the same adhesive film as that of the above Example 1.

<Production of Film for Semiconductor Device>

The film for a semiconductor device of the present Example 4 was produced by laminating a film of a terpene ketone release-treated polyethylene terephthalate film (thickness: 12 μm) in the same manner as in the above Example 1 except that the above-described dicing film was used. A film for a semiconductor device.

(Example 5)

<Production of Sliced Film>

In the dicing film of the present example, the thickness of the adhesive layer after drying was set to 5 μm, the thickness of the polyolefin film (substrate) to be used was 75 μm, and the total thickness of the diced film was set to 80 μm. The dicing film of the present example was produced in the same manner as in the above Example 1.

<Production of Adhesive Film>

The adhesive film of this example was the same adhesive film as that of the above Example 1.

<Production of Film for Semiconductor Device>

The film for a semiconductor device of the present Example 5 was subjected to the release treatment of the fluorenone in the same manner as in the above Example 1, except that the above-mentioned dicing film was used, and the laminating temperature was changed to 50° C. and the line pressure was set to 5 kg/cm. A polyethylene terephthalate film (thickness: 75 μm) was used to produce a film for semiconductor device production.

(Comparative Example 1)

<Production of Sliced Film>

In the dicing film of the comparative example, the thickness of the adhesive layer after drying was 50 μm, the thickness of the polyolefin film (substrate) to be used was 150 μm, and the total thickness of the diced film was set to 200 μm. To the above example 1 The diced film of this comparative example was produced in the same manner.

<Production of Film for Semiconductor Device>

The film for a semiconductor device of Comparative Example 1 was subjected to the above-mentioned dicing film, and the laminating temperature was changed to 60° C., and the line pressure was set to 5 kg/cm, and the ketone ketone was released in the same manner as in Example 1. A processed polyethylene terephthalate film (thickness: 12 μm) was used to prepare a film for a semiconductor device.

(Comparative Example 2)

<Production of Sliced Film>

In the dicing film of the comparative example, the thickness of the adhesive layer after drying was 15 μm, the thickness of the polyolefin film (substrate) to be used was 40 μm, and the total thickness of the diced film was 55 μm. The diced film of this comparative example was produced in the same manner as in the above Example 1.

<Production of Film for Semiconductor Device>

In the film for a semiconductor device of Comparative Example 2, a poly(ethylene terephthalate film (thickness: 150 μm) which was subjected to an oxime release treatment was bonded in the same manner as in the above Example 1 except that the above-mentioned diced film was used. A film for a semiconductor device is produced.

(Measurement of peeling force)

The peeling force between the adhesive film and the cover film in the film for a semiconductor device obtained in each of the examples and the comparative examples, the peeling force between the dicing film and the adhesive film, and the cover film and the dicing film (adhesive layer) The peeling force measurement was performed by a T-peel test (JIS K6854-3) under the conditions of a temperature of 23 ± 2 ° C, a relative humidity of 55 ± 5% Rh, and a peeling speed of 300 mm / min. In addition, the tensile tester uses the trade name "Automatic Stereographer AGS-H" (Island) Manufactured by Tsusho Co., Ltd.)

(Tensile modulus of the adhesive layer)

The value of the tensile elastic modulus of the adhesive layer is a value obtained by the following measurement method. That is, the adhesive layer 14 was cut into a sample having a length of 30.0 mm, a width of 10.0 mm, and a cross-sectional area of 0.1 mm ² to 0.5 mm ² . The sample was subjected to a tensile test in the MD direction at a measurement temperature of 23 ° C, a distance between the chucks of 20 mm, and a tensile speed of 50 mm / min, and the amount of change (mm) caused by the elongation of the sample was measured. Thereby, in the obtained SS (Strain-Strength) curve, a tangential line is drawn on the initial rising portion of the curve, and the tensile strength corresponding to the tangential elongation of 100% is divided by the sectional area, and the obtained value is used as an adhesive. The tensile modulus of elasticity of the layer.

(Tensile modulus of the adhesive film before thermosetting)

The adhesive composition in the examples and the comparative examples was applied to a release liner subjected to a release treatment so as to be 100 μm to obtain a diced film. The adhesive film was measured for tensile modulus at 23 ° C using a viscoelasticity measuring device (manufactured by Rheometrics Co., Ltd.: model: RSA-II). More specifically, the sample size is set to a length of 30 mm, a width of 5 mm, and a thickness of 0.1 mm, and the measurement sample is placed on a film tensile measurement jig at a frequency of 10.0 Hz in a temperature range of -30 ° C to 280 ° C. The measurement was carried out under the conditions of a strain of 0.025% and a temperature increase rate of 10 ° C/min.

(The presence or absence of interface peeling and film bulging)

The film ridges of the film for a semiconductor device obtained in each of the examples and the comparative examples were confirmed as follows. That is, each film for a semiconductor device was allowed to stand in a refrigerator at a temperature of -30 ± 2 ° C for 120 hours. And at a temperature of 23 ± 2 ° C, It was allowed to stand for 24 hours in an environment with a relative humidity of 55 ± 5% Rh. Then, it was confirmed whether or not interfacial peeling and film bulging occurred between the respective films of the film for a semiconductor device. The evaluation criteria were ○ where no interface peeling or film bulging was observed by visual observation, and the case where interface peeling or film bulging was observed was ×.

(The presence or absence of voids after installation)

The presence or absence of voids in the film for a semiconductor device obtained in each of the examples and the comparative examples was confirmed as follows. That is, the cover film is peeled off from each of the films for the semiconductor device, and the semiconductor wafer is mounted on the adhesive film. The semiconductor wafer is a semiconductor wafer having a size of 8 inches and a thickness of 75 μm. The mounting conditions of the semiconductor wafer are as follows.

<Finishing conditions>

Attachment device: ACC (share) manufacturing, trade name; RM-300

Attached speedometer: 50mm/sec

Attachment pressure: 0.2MPa

Attachment temperature: 50 ° C

Next, it was confirmed by a microscope whether or not voids (air bubbles) were present on the bonding surface of the adhesive film attached to the wafer and the semiconductor wafer. The results are shown in Table 1 below.

(picked evaluation)

The cover film is peeled off from each of the films for the semiconductor device, and the semiconductor wafer is mounted on the adhesive film. The semiconductor wafer is a semiconductor wafer having a size of 8 inches and a thickness of 75 μm. The mounting conditions of the semiconductor wafer are the same as described above.

Next, dicing of the semiconductor wafer was performed according to the following conditions to form 30 semiconductor wafers. Next, the semiconductor wafer is picked up together with the adhesive film. Picking up is for 30 semiconductor wafers (length 10mm × width 10mm) In the row, the case where the semiconductor wafer is successfully picked up without damage is counted and the success rate is calculated. The results are shown in Table 1 below. Further, in Comparative Example 1, when the bonding film was attached by the mounting machine, the coating film and the adhesive film were not peeled off, and a plurality of conveyance errors (unable to be separated) occurred. The pickup conditions are as follows.

<Cutting conditions>

Crystal cutting method: step cutting

Crystal cutting device: DISCO DFD6361 (trade name, manufactured by DISCO Corporation)

Cleavation speed: 30mm/sec

Crystal cutting blade: Z1; "NBC-ZH2030-SE27HCD" manufactured by DISCO

Z2; DISCO company manufactures "NBC-ZH1030-SE27HCB"

Cutting blade speed: Z1; 40,000 rpm, Z2; 45,000 rpm

Cutting tape cutting depth: 20μm

Wafer chip size: 10mm × 10mm

<Picking conditions>

Pickup device: Product name "SPA-300" manufactured by Shinkawa Co., Ltd.

Number of stitches: 9

Push up: 300μm

Push-up speed: 10mm / sec

Pull down: 3mm

<Evaluation of the presence or absence of voids due to the transfer of the marks after one month of refrigerated storage>

The winding tension was set to 2 kg, and the obtained examples and comparative examples were obtained. The film for a semiconductor device is taken up in a roll shape. Next, in this state, it was left in a refrigerator at a temperature of 5 ° C for one month. Then, after returning to room temperature, the roll was released, and the 100-piece adhesive film attached to the wafer was used to mount the semiconductor wafer, and the presence or absence of voids was visually confirmed. The semiconductor wafer is a semiconductor wafer having a size of 8 inches and a thickness of 75 μm. In addition, the bonding conditions were the same as the evaluation of the voids after the above mounting. The results are shown in Table 1.

Further, the peeling force F1 in Table 1 indicates the peeling force between the adhesive film attached to the wafer and the cover film, the peeling force F2 indicates the peeling force between the cut film and the adhesive film, and the peeling force F3 indicates the cover film and the cut crystal. Peel force between films (adhesive layers).

(result)

As can be seen from Table 1, if it is the semiconductor package of Examples 1 to 5. When the film was placed, no gap was observed immediately after the semiconductor wafer was mounted. Further, when it was wound and stored in a refrigerated state for one month, voids due to the transfer of the curl were not confirmed. Further, when the semiconductor device is bonded to the semiconductor wafer by the mounting device, the adhesive film attached to the wafer and the cover film can be preferably peeled off (separated). On the other hand, in the film for a semiconductor device of Comparative Example 1, a void was confirmed immediately after the semiconductor wafer was mounted. Further, when it was wound and stored in a refrigerator for one month, the void due to the transfer of the curl was confirmed. Also, the phenomenon of film bulging of the cover film was confirmed. Further, at the time of mounting the semiconductor wafer, the cover film is not peeled off from the film for a semiconductor device and a plurality of conveyance errors occur. And wafer scatter or debris occurs during dicing of the semiconductor wafer. Further, in the film for a semiconductor device of Comparative Example 2, although the pickup property was good, the void was confirmed immediately after the semiconductor wafer was mounted. Further, when it was wound and stored in a refrigerator for one month, the void due to the transfer of the curl was confirmed. Further, the phenomenon that the film of the cover film was raised was also confirmed.

1‧‧‧Adhesive film attached to the wafer

2‧‧‧ Cover film

10‧‧‧Metal film for semiconductor devices

11‧‧‧Cleaning film

12‧‧‧Adhesive film

13‧‧‧Substrate

14‧‧‧Adhesive layer

19‧‧ ‧ step

21‧‧‧1st spacer

22‧‧‧Substrate spacer

23‧‧‧2nd spacer

(a) of FIG. 1 is a plan view showing an outline of a film for a semiconductor device of the present embodiment, and (b) of FIG. 1 is a partial cross-sectional view of a film for a semiconductor device.

FIG. 2 is a partial cross-sectional view showing a state in which the film for a semiconductor device shown in (a) to (b) of FIG. 1 is wound into a roll shape.

(a) to (c) of FIG. 3 are schematic views for explaining a manufacturing process of the film for a semiconductor device.

1‧‧‧Adhesive film attached to the wafer

2‧‧‧ Cover film

10‧‧‧Metal film for semiconductor devices

11‧‧‧Cleaning film

12‧‧‧Adhesive film

13‧‧‧Substrate

14‧‧‧Adhesive layer

Claims (3)

A film for a semiconductor device, which is a film for a semiconductor device which is provided on a cover film by a film-attached adhesive film in which an adhesive film is laminated on a dicing film at a predetermined interval, and is characterized in that the thickness of the cover film is When Ta is set to a thickness of Tb, the Ta/Tb is in the range of 0.07 to 2.5, and in the T-peel test under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min, The peeling force F1 between the adhesive film and the cover film is in the range of 0.025 N/100 mm to 0.075 N/100 mm, and the peeling force F2 between the adhesive film and the dicing film is 0.08 N/100 mm to 10 N/100 mm. In the range of F1 and F2 described above, the relationship of F1 < F2 is satisfied. The film for a semiconductor device according to claim 1, wherein the cover film has a thickness Ta of from 10 μm to 100 μm. The film for a semiconductor device according to the first or second aspect of the invention, wherein the thickness of the sliced film Tb is from 25 μm to 180 μm.