CN104946152B - Dicing film, dicing/die bonding film, and method for manufacturing semiconductor device - Google Patents

Dicing film, dicing/die bonding film, and method for manufacturing semiconductor device Download PDF

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CN104946152B
CN104946152B CN201510148818.2A CN201510148818A CN104946152B CN 104946152 B CN104946152 B CN 104946152B CN 201510148818 A CN201510148818 A CN 201510148818A CN 104946152 B CN104946152 B CN 104946152B
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die
film
dicing
bonding film
bonding
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CN104946152A (en
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木村雄大
三隅贞仁
村田修平
大西谦司
宍户雄一郎
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The invention provides a dicing film, a dicing die-bonding film and a method for manufacturing a semiconductor device, which can cause a semiconductor wafer and a die-bonding film to break even by expansion at low temperature. A dicing film comprising a base material and a pressure-sensitive adhesive layer provided on the base material, wherein E ' represents a storage modulus in the MD ' obtained from a stress-strain curve obtained when tensile stress is applied at 0 ℃ in each of the MD direction and the TD direction ' MD1 And the storage modulus in the TD direction is E' TD1 Of is E' MD1 /E’ TD1 Is 0.75 to 1.25 inclusive.

Description

Dicing film, dicing/die bonding film, and method for manufacturing semiconductor device
Technical Field
The present invention relates to a dicing film, a dicing die-bonding film, and a method for manufacturing a semiconductor device.
Background
Conventionally, in a manufacturing process of a semiconductor device, a dicing die-bonding film has been proposed which adheres and holds a semiconductor wafer in a dicing process and also provides an adhesive layer for die attachment required in a mounting process (for example, see patent document 1). The dicing die-bonding film is formed by providing an adhesive layer on a dicing film provided with a support base and an adhesive layer, dicing (so-called blade dicing) a semiconductor wafer with a blade while holding the adhesive layer, then stretching the dicing film in an expansion (expansion) step, and then picking up the singulated chips together with the adhesive layer, and recovering them one by one and fixing them to an adherend such as a lead frame via the adhesive layer.
On the other hand, in recent years, there have been proposed: a method (hereinafter, also referred to as "Stealth Dicing" (registered trademark)) in which a predetermined dividing line of a semiconductor wafer is irradiated with a laser beam to form modified regions, so that the semiconductor wafer can be easily divided along the predetermined dividing line, and then a tensile stress is applied to break the semiconductor wafer, thereby obtaining individual semiconductor chips (see, for example, patent documents 2 and 3). According to these methods, it is possible to reduce the occurrence of failures such as chipping, particularly even in a thin semiconductor wafer, and to make the kerf width (kerf edge) narrower than before, thereby improving the yield of semiconductor chips.
Documents of the prior art
Patent literature
Patent document 1: japanese patent laid-open No. 2008-218571
Patent document 2: japanese laid-open patent publication No. 2002-192370
Patent document 3: japanese patent laid-open publication No. 2003-338467
Disclosure of Invention
Problems to be solved by the invention
In order to obtain each semiconductor chip with a die-bonding film by means of the Stealth Dicing with the Dicing die-bonding film held, it is necessary to break the die-bonding film together with the semiconductor wafer by means of tensile stress in the expanding step. However, in practice, the die bond film is not only subjected to tensile stress, but in particular, the dicing film is subjected to tensile stress to elongate the film, which may cause breakage of the die bond film.
In order to improve the fracture property of the die-bonding film in Stealth Dicing, a method of expanding at a low temperature (for example, 0 ℃ C.) has been proposed. However, when the dicing film of the conventional dicing die-bonding film is spread at a low temperature, a defect that the semiconductor wafer or the die-bonding film is not partially broken occurs, and the manufacturing yield of the semiconductor device is reduced.
The present invention has been made in view of the above problems, and an object thereof is to provide a dicing film which can cause breakage of a semiconductor wafer or a die-bonding film even by expansion at low temperature, a dicing die-bonding film provided with the dicing film, and a method for manufacturing a semiconductor device using the dicing film and the die-bonding film.
Means for solving the problems
The present inventors have conducted extensive studies to solve the above-described problems, and as a result, have found that anisotropy occurs in consideration of characteristics (hereinafter, also referred to as "tensile characteristics") when a dicing film or a dicing/die bonding film is subjected to tensile stress, and that the die bonding film and the semiconductor wafer can be suitably broken by the tensile stress by suppressing the anisotropy, thereby completing the present invention.
That is, the present invention relates to a dicing film comprising a base material and an adhesive layer provided on the base material,
e ' represents a storage modulus in the MD ' determined from a stress-strain curve obtained when a tensile stress is applied at 0 ℃ in each of the MD and TD directions ' MD1 And the storage modulus in the TD direction is E' TD1 Of is E' MD1 /E’ TD1 Is 0.75 to 1.25 inclusive.
The present inventors have focused on the anisotropy of the tensile properties, particularly the anisotropy of the substrate that bears the mechanical strength of the cut film. The film base material (typically, olefin film) used for the dicing film is often provided with anisotropy in the production steps such as extrusion molding and stretching treatment, and further, since the film base material is processed in a roll form, there is a case where anisotropy is generated by tensile stress due to winding tension or the like. Further, when a dicing die-bonding film is manufactured, a die-bonding film formed on a separator may be attached to a long dicing film to be conveyed, and the dicing film and the die-bonding film may be integrated. When the tension in the bonding step is strong, stress is generated due to the tension, and anisotropy is generated.
In the stretching step, the entire outer periphery of the dicing film is stretched in the radial direction to apply tensile stress, but the dicing film obtained using the anisotropic base material has uneven in-plane tensile properties, and thus the breakage of the semiconductor wafer and/or the die bonding film becomes insufficient. In particular, at a low temperature such as 0 ℃, such anisotropy tends to become remarkable.
The cut film was subjected to tensile stress at 0 ℃ to obtain a storage modulus E 'in the MD direction' MD1 Storage modulus E 'to TD direction' TD1 Ratio of (E' MD1 /E’ TD1 Hereinafter also referred to as "anisotropy ratio 1") is 0.75 or more and 1.25 or less. In other words, anisotropy of storage modulus, which is one of the tensile properties, is suppressed, and the in-plane tensile properties of the cut film are made isotropic as much as possible. As a result, the tensile stress during expansion is uniformly applied to the surface of the dicing film, and the dicing film is uniformly extended in the radial direction, thereby sufficiently breaking the die bonding film and the semiconductor wafer. When the anisotropy ratio is deviated from the upper limit or the lower limit of 1, the anisotropy of the stretch characteristics of the cut film is exhibited in any case, and sufficient breaking may not be induced.
In the present specification, the MD direction refers to the moving direction of the base material, and the TD direction refers to the direction perpendicular to the MD direction. The storage modulus was measured according to the description of examples.
The cut film is preferably one having the storage modulus E' MD1 And the aforementioned storage modulus E' TD1 The absolute value of the difference is 1MPa or more and 50MPa or less. By setting the absolute value of the difference in storage modulus to the above range, the stretch properties of the slit film can be made more uniform.
The cut film is preferably one having the storage modulus E' MD1 And the aforementioned storage modulus E' TD1 At least one of them is 10MPa or more and 100MPa or less. This prevents the dicing film from being inadvertently broken at low temperatures, and also allows the dicing film to be well stretched even at low temperatures, thereby initiating sufficient breaking of the die-bonding film and the semiconductor wafer.
The present invention also includes a dicing die-bonding film including the dicing film and a thermosetting die-bonding film provided on the pressure-sensitive adhesive layer of the dicing film. This makes it possible to efficiently perform the steps from dicing of the semiconductor wafer to picking up the semiconductor element and mounting the semiconductor element as a series of processes.
In the dicing die-bonding film, the peeling force at 0 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film is preferably higher than the peeling force at 23 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film. This makes it possible to appropriately balance the holding force of the semiconductor wafer and/or the semiconductor element during dicing and the peeling property of the chip with the die bond film during picking up.
In the dicing die-bonding film, the peel force at 0 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film is preferably 0.15N/100mm or more and 5N/100mm or less. When the peeling force between the dicing film and the die-bonding film is weak, peeling occurs at the interface between the die-bonding film and the dicing film during spreading, and as a result, a failure in breaking or a semiconductor element broken flies, and therefore the peeling force at 0 ℃. On the other hand, when the peeling force is too high, fracture failure may occur, and therefore, it is preferably 5N/100mm or less. In the present specification, the method of measuring the peeling force is described in the examples.
In the dicing die-bonding film, the peel force at 23 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film is preferably 0.05N/100mm or more and 2.5N/100mm or less. The semiconductor element with the die-bonding film is preferably light peelable from the dicing film at normal temperature (23 ± 2 ℃). In particular, the semiconductor wafer of Stealth Dicing is thinner than the case of Dicing with a blade, and cracks are likely to occur, and therefore further reduction in peeling force is required. By setting the peeling force to 2.5N/100mm or less, good light peeling properties can be exhibited. On the other hand, when the peeling force is less than 0.05N/100mm, the semiconductor element may be difficult to hold during transportation. When the pressure-sensitive adhesive layer is of a type in which the adhesive strength is reduced by ultraviolet irradiation, the peeling force after the ultraviolet irradiation may be within the above range.
The dicing die-bonding film can be suitably used in a method for manufacturing a semiconductor device, in which a semiconductor wafer is irradiated with a laser beam to form a modified region, and then the semiconductor wafer is broken along the modified region to obtain a semiconductor device.
The present invention also provides a method for manufacturing a semiconductor device, including the steps of:
irradiating a planned dividing line of a semiconductor wafer with laser light to form a modified region along the planned dividing line;
a step of attaching the semiconductor wafer on which the modified region is formed to the dicing die-bonding film;
a step of forming a semiconductor element by applying a tensile stress to the dicing die-bonding film at-20 to 15 ℃ to break the semiconductor wafer and the die-bonding film with the dicing die-bonding film along the planned dividing line;
picking up the semiconductor element together with the die bond film; and
and a step of die bonding the picked-up semiconductor element to an adherend via the die bonding film.
In this manufacturing method, since the semiconductor wafer is broken by the steath Dicing using the Dicing die-bonding film with suppressed anisotropy of tensile properties, sufficient breakage of the die-bonding film and the semiconductor wafer can be caused in the expansion step of the tensile stress, and defects such as chipping of the semiconductor element can be prevented, thereby improving the manufacturing efficiency.
Drawings
Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view illustrating a dicing die-bonding film according to another embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view for explaining a method of manufacturing a semiconductor device of this embodiment mode.
Fig. 4 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device of this embodiment mode.
Fig. 5 (a) and 5 (b) are schematic cross-sectional views for explaining a method of manufacturing a semiconductor device according to this embodiment.
Fig. 6 is a schematic cross-sectional view for explaining a method of manufacturing a semiconductor device of this embodiment mode.
Description of the reference numerals
1. Substrate material
2. Adhesive layer
3. 3' chip bonding film (thermosetting type chip bonding film)
4. Semiconductor wafer
5. Semiconductor chip
6. Adherend (adherend)
7. Bonding wire
8. Encapsulating resin
10. 12 dicing die-bonding film
11. Cutting film
Detailed Description
< dicing die-bonding film >
The dicing die-bonding film of the present invention is described below. Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view illustrating a dicing die-bonding film according to another embodiment of the present invention.
As shown in fig. 1, the dicing die-bonding film 10 has a structure in which the die-bonding film 3 is laminated on the dicing film 11. The dicing film 11 is formed by laminating the pressure-sensitive adhesive layer 2 on the base material 1, and the die-bonding film 3 is provided on the pressure-sensitive adhesive layer 2. In the present invention, the die bond film 3' may be formed only on the semiconductor wafer bonding portion, as in the dicing die bond film 12 shown in fig. 2.
(cutting film)
E ' represents a storage modulus in the MD ' of the cut film 11 obtained from a stress-strain curve at 0 ℃ under tensile stress in each of the MD and TD directions ' MD1 And the storage modulus in the TD direction is E' TD1 Of' MD1 /E’ TD1 Is 0.75 to 1.25 inclusive. The above ratio (anisotropy ratio: 1) E' MD1 /E’ TD1 The lower limit of (b) is preferably 0.78 or more. On the other hand, the upper limit of the anisotropy ratio 1 is preferably 1.20 or less, and more preferably 1.17 or less. By setting the anisotropy ratio of the dicing film 11 to 1 in the above range, the tensile stress at the time of expansion is uniformly applied to the surface of the dicing film, the elongation of the dicing film in the radial direction becomes uniform, and sufficient fracture of the die bonding film and the semiconductor wafer can be induced.
(substrate)
The substrate 1 preferably has ultraviolet transparency and serves as a strength base for the dicing die- bonding films 10 and 12. Examples thereof include low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, polyolefins such as homopolypropylene, polybutene, and polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic acid copolymers, ethylene- (meth) acrylate (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethanes, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polycarbonates, polyimides, polyether ether ketones, polyimides, polyetherimides, polyamides, wholly aromatic polyamides, polyphenylene sulfides, aramid (paper), glass cloth, fluorine resins, polyvinyl chloride, polyvinylidene chloride, cellulosic resins, silicone resins, metals (foils), and paper. Further, polymers such as crosslinked products of the above resins are exemplified.
The resin film is easily provided with anisotropy in the production process thereof. The base material bears the mechanical strength of the cut film, and therefore strongly influences the anisotropy of the tensile properties of the cut film. Therefore, it is preferable that the anisotropy of the resin film itself as the base material is suppressed. The measures for reducing the anisotropy of the resin film are not particularly limited, and examples thereof include: using a resin film formed by a solution casting method; or performing a heat treatment to a level capable of relaxing the stress remaining in the resin film; or without stretching, rolling, or the like, and reducing the winding tension as much as possible so as not to apply stress to the resin film. The resin film may be used in a non-stretched state, or may be subjected to uniaxial or biaxial stretching treatment as necessary, as long as the anisotropy of the stretching properties of the cut film can be suppressed.
The surface of the substrate 1 may be subjected to a common surface treatment for the purpose of improving adhesion to an adjacent layer, retention, and the like, for example, a chemical or physical treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, ionizing radiation treatment, or a coating treatment with an undercoating agent (for example, an adhesive substance described later). The substrate 1 may be used by appropriately selecting one kind or different kinds of materials, and a plurality of kinds of materials blended together may be used as necessary. In addition, in order to impart antistatic ability to the substrate 1, a metal, an alloy, an oxide thereof, or the like may be provided on the substrate 1 in a thickness of
Figure BDA0000691667270000081
And vapor deposition layers of left and right conductive materials. The substrate 1 may be a single layer or a multilayer of 2 or more.
The thickness of the substrate 1 may be appropriately determined without any particular limitation, and is usually about 5 to 200 μm.
(adhesive layer)
The pressure-sensitive adhesive layer 2 is composed of an ultraviolet-curable pressure-sensitive adhesive. The ultraviolet-curable adhesive can easily reduce the adhesive force thereof by increasing the crosslinking degree by irradiation with ultraviolet rays, and can provide a difference in adhesive force from the other portion 2b by irradiating only the portion 2a of the adhesive layer 2 shown in fig. 2 corresponding to the semiconductor wafer bonded portion with ultraviolet rays.
In addition, by curing the ultraviolet-curing type adhesive layer 2 in conformity with the die-bonding film 3' shown in fig. 2, the aforementioned portion 2a having significantly reduced adhesive force can be easily formed. Since the die bond film 3 'is attached to the part 2a, which is cured to have a reduced adhesive force, the interface between the part 2a of the adhesive layer 2 and the die bond film 3' has a property of being easily peeled off at the time of picking up. On the other hand, the portion not irradiated with ultraviolet rays has sufficient adhesive force, and the portion 2b is formed.
As described above, in the adhesive layer 2 of the dicing die-bonding film 10 shown in fig. 1, the portion 2b formed with the uncured ultraviolet-curable adhesive is bonded to the die-bonding film 3, and the holding force at the time of dicing can be secured. In this way, the ultraviolet-curable pressure-sensitive adhesive can support the die-bonding film 3 for die-bonding the semiconductor chip to an adherend such as a substrate with good adhesion/peeling balance. In the adhesive layer 2 of the dicing die-bonding film 12 shown in fig. 2, the aforementioned portion 2b can fix the wafer ring.
The ultraviolet-curable pressure-sensitive adhesive may be one having an ultraviolet-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness, without any particular limitation. As an example of the ultraviolet-curable adhesive, an additive type ultraviolet-curable adhesive in which an ultraviolet-curable monomer component and an oligomer component are blended with a general pressure-sensitive adhesive such as an acrylic adhesive and a rubber adhesive is shown.
As the pressure-sensitive adhesive, an acrylic adhesive containing an acrylic polymer as a base polymer is preferable from the viewpoint of cleaning performance of electronic parts such as semiconductor wafers and glass which are not desired to be contaminated, by an organic solvent such as ultrapure water or alcohol.
Examples of the acrylic polymer include acrylic polymers using, as a monomer component, 1 or 2 or more of alkyl (meth) acrylates (e.g., linear or branched alkyl esters having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl esters) and cycloalkyl (meth) acrylates (e.g., cyclopentyl, cyclohexyl esters). The term "(meth) acrylate" means acrylate and/or methacrylate, and the same applies to (meth) acrylate of the present invention.
The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the alkyl (meth) acrylate or cycloalkyl ester, as necessary, for the purpose of modifying the cohesive strength, heat resistance, and the like. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, (meth) sulfopropyl acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile, and the like. These copolymerizable monomer components can be used in 1 or more than 2. The amount of the copolymerizable monomer is preferably 40% by weight or less based on the total monomer components.
The acrylic polymer may further contain a polyfunctional monomer or the like as a comonomer component as necessary for crosslinking. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. These polyfunctional monomers may be used in 1 or 2 or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.
The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of 2 or more monomers. The polymerization may be carried out by any of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. From the viewpoint of preventing contamination of a clean adherend, etc., it is preferable that the content of the low-molecular weight substance is small. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 30 ten thousand or more, and more preferably about 40 to 300 ten thousand.
In the adhesive, an external crosslinking agent may be suitably used in order to increase the number average molecular weight of the base polymer, such as an acrylic polymer. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added to the reaction mixture to carry out the reaction. When the external crosslinking agent is used, the amount thereof is appropriately determined in accordance with the balance with the base polymer to be crosslinked, and further in accordance with the use as an adhesive. In general, it is preferably 5 parts by weight or less based on 100 parts by weight of the base polymer. The lower limit is preferably 0.1 part by weight or more. Further, additives such as various tackifiers and antioxidants may be used as necessary in the adhesive in addition to the above components.
Examples of the ultraviolet-curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the ultraviolet-curable oligomer component include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, and polybutadiene type, and the molecular weight thereof is preferably in the range of about 100 to 30000. The amount of the ultraviolet-curable monomer component and the oligomer component to be blended may be determined as appropriate depending on the type of the pressure-sensitive adhesive layer, and the amount of the ultraviolet-curable monomer component and the amount of the ultraviolet-curable oligomer component to be blended may be determined so as to reduce the adhesive force of the pressure-sensitive adhesive layer. Usually, the amount of the acrylic polymer is, for example, about 5 to 500 parts by weight, preferably about 70 to 150 parts by weight, based on 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
In addition, as the ultraviolet-curable adhesive, in addition to the additive type ultraviolet-curable adhesive described above, an intrinsic type ultraviolet-curable adhesive using a polymer having a carbon-carbon double bond in a side chain or a main chain of the polymer or at a terminal of the main chain as a base polymer can be cited. The internal type ultraviolet curable pressure sensitive adhesive does not need to contain, or does not contain a large amount of, an oligomer component or the like as a low molecular weight component, and therefore, does not move in the pressure sensitive adhesive over time, and is preferable because a pressure sensitive adhesive layer having a stable layer structure can be formed.
The base polymer having a carbon-carbon double bond may be a polymer having a carbon-carbon double bond and having adhesive properties, without any particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. The basic skeleton of the acrylic polymer includes the above-mentioned exemplary acrylic polymers.
The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed, and molecular design is facilitated when a carbon-carbon double bond is introduced into a side chain of the polymer. For example, the following methods can be mentioned: a method in which a monomer having a functional group is copolymerized in advance with an acrylic polymer, and then a compound having a functional group reactive with the functional group and a carbon-carbon double bond is condensed or subjected to an addition reaction while maintaining the ultraviolet-curing property of the carbon-carbon double bond.
Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridine groups, and hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is suitable from the viewpoint of easiness of reaction tracing. In addition, the functional group may be located on either side of the acrylic polymer and the compound as long as the acrylic polymer having a carbon-carbon double bond can be produced by the combination of these functional groups, but in the above-described preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl- α, α -dimethylbenzyl isocyanate. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxyl group-containing monomers, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, ether compounds of diethylene glycol monovinyl ether, and the like can be used.
The internal type ultraviolet-curable adhesive may use the base polymer having a carbon-carbon double bond (particularly, an acrylic polymer) alone, or may contain the ultraviolet-curable monomer component or oligomer component at a level that does not deteriorate the characteristics. The amount of the ultraviolet-curable oligomer component is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
The ultraviolet-curable adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include α -ketal compounds such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexyl benzophenone; acetophenone compounds such as methoxyacetophenone, 2-dimethoxy-2-phenylacetophenone, 2-diethoxyacetophenone and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropan-1-one; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; ketal compounds such as benzyl dimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; optically active oxime-based compounds such as 1-phenyl-1, 2-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone-based compounds such as benzophenone, benzoylbenzoic acid, and 3,3' -dimethyl-4-methoxybenzophenone; thioxanthone compounds such as thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone and 2, 4-diisopropylthioxanthone; camphorquinone; a halogenated ketone; an acylphosphine oxide; acyl phosphonates and the like. The amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight per 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.
Examples of the ultraviolet-curable adhesive include rubber-based adhesives and acrylic adhesives containing an addition polymerizable compound having 2 or more unsaturated bonds, a photopolymerizable compound such as an alkoxysilane having an epoxy group, and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt compound, which are disclosed in jp-a-60-196956 a.
As a method for forming the portion 2a in the pressure-sensitive adhesive layer 2, there is a method in which an ultraviolet-curable pressure-sensitive adhesive layer 2 is formed on the substrate 1, and then the portion 2a is partially irradiated with ultraviolet rays to be cured. The partial ultraviolet irradiation may be performed through a photomask having a pattern corresponding to the portion 3b or the like other than the semiconductor wafer attaching portion 3 a. Further, a method of irradiating ultraviolet rays in a spot shape to cure the ultraviolet rays may be mentioned. The ultraviolet-curable pressure-sensitive adhesive layer 2 may be formed by transferring the pressure-sensitive adhesive layer provided on the separator to the substrate 1. The partial ultraviolet curing may be performed on the ultraviolet curing pressure-sensitive adhesive layer 2 provided on the separator.
In the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10, a part of the pressure-sensitive adhesive layer 2 may be irradiated so as to have (the adhesive force of the aforementioned portion 2 a) < (the adhesive force of the other portion 2 b). That is, the portion 2a having reduced adhesive strength can be formed by forming the ultraviolet-curable adhesive layer 2 on the base material 1, which is a base material having all or a part of the portion other than the portion corresponding to the semiconductor wafer pasting portion 3a, shielded from light, and then irradiating ultraviolet rays to cure the portion corresponding to the semiconductor wafer pasting portion 3 a. As the light-shielding material, a material that can be used as a photomask on the support film can be produced by printing, vapor deposition, or the like. This enables the dicing die-bonding film 10 of the present invention to be efficiently manufactured.
The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm, from the viewpoint of preventing chipping of the cut chip surface and maintaining the compatibility of fixing the pressure-sensitive adhesive layer.
The cut film 11 is preferably made of the storage modulus E' MD1 And the aforementioned storage modulus E' TD1 The absolute value of the difference is 1MPa or more and 50MPa or less, more preferably 3MPa or more and 30MPa or less. By setting the absolute value of the difference in storage modulus to the above range, the stretch properties of the slit film can be made more uniform.
The cut film 11 is preferably the storage modulus E' MD1 And the aforementioned storage modulus E' TD1 At least one of them is 10MPa or more and 100MPa or less, more preferably 20MPa or more and 90MPa or less. This can prevent inadvertent breakage of the dicing film at low temperature, and can cause sufficient breakage of the die bonding film and the semiconductor wafer by stretching the dicing film well even at low temperature.
(chip bonding film)
The layer structure of the die-bonding film is not particularly limited, and examples thereof include: a multilayer structure in which an adhesive layer is formed only in a single layer, a single-layer adhesive layer is laminated, or an adhesive layer is formed on one surface or both surfaces of a core material, as in the die bond films 3 and 3' (see fig. 1 and 2). Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a resin substrate reinforced with glass fibers or plastic nonwoven fibers, a silicon substrate, a glass substrate, and the like. When the die bond film has a multilayer structure, the storage modulus and the like may be within the numerical range as the whole of the multilayer structure die bond film.
As the adhesive composition constituting the die-bonding films 3 and 3', a composition using a thermoplastic resin and a thermosetting resin in combination can be exemplified.
Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins may be used alone or in combination of 2 or more. Particularly, an epoxy resin containing a small amount of ionic impurities or the like which corrode a semiconductor element is preferable. The curing agent for the epoxy resin is preferably a phenol resin.
The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, and for example, a bifunctional epoxy resin or a polyfunctional epoxy resin such as a bisphenol a type, a bisphenol F type, a bisphenol S type, a brominated bisphenol a type, a hydrogenated bisphenol a type, a bisphenol AF type, a biphenyl type, a naphthalene type, a fluorene type, a phenol novolac type, an o-cresol novolac type, a trishydroxyphenylmethane type, a tetrahydroxyphenylethane type, or the like, or an epoxy resin such as a hydantoin type, a triglycidyl isocyanurate type, or a glycidylamine type can be used. These may be used alone or in combination of 2 or more. Among these epoxy resins, particularly preferred is a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin, or a tetrahydroxyphenylethane type epoxy resin. This is because these epoxy resins are highly reactive with phenolic resins as curing agents and are excellent in heat resistance and the like.
Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include novolac-type phenol resins such as phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins; resol-type phenol resins, polyoxystyrenes such as polyoxystyrene. These may be used alone or in combination of 2 or more. Among these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.
The compounding ratio of the epoxy resin and the phenol resin is preferably, for example, such that the hydroxyl group in the phenol resin is compounded in an amount of 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. More preferably 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two components is out of the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to be deteriorated.
Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon and 6, 6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET and PBT, a polyamideimide resin, and a fluororesin. These thermoplastic resins may be used singly or in combination of 2 or more. Among these thermoplastic resins, acrylic resins having a small amount of ionic impurities, high heat resistance, and capable of securing reliability of semiconductor devices are particularly preferable.
The acrylic resin is not particularly limited, and examples thereof include a polymer (acrylic copolymer) containing 1 or more or 2 or more species of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, a cyclohexyl group, a 2-ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.
Among the above acrylic resins, acrylic copolymers are particularly preferable for the reason of improving the cohesive force. Examples of the acrylic copolymer include a copolymer of ethyl acrylate and methyl methacrylate, a copolymer of acrylic acid and acrylonitrile, and a copolymer of butyl acrylate and acrylonitrile.
The glass transition temperature (Tg) of the acrylic resin is preferably-30 ℃ or higher and 30 ℃ or lower, more preferably-20 ℃ or higher and 15 ℃ or lower. When the glass transition temperature of the acrylic resin is set to-30 ℃ or higher, the die bond film is hardened and the fracture property is improved, and when the glass transition temperature is set to 30 ℃ or lower, the wafer lamination property at a low temperature is improved. As the acrylic resin having a glass transition temperature of-30 ℃ or higher and 30 ℃ or lower, there may be mentioned, for example, SG-708-6 (glass transition temperature: 6 ℃) manufactured by Nagase Chemtex Corporation, SG-790 (glass transition temperature: 25 ℃), WS-023 (glass transition temperature: 5 ℃), SG-80H (glass transition temperature: 7.5 ℃), and SG-P3 (glass transition temperature: 15 ℃).
Examples of the other monomer forming the polymer include, but are not particularly limited to, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid, anhydride monomers such as maleic anhydride and itaconic anhydride, hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) -methyl acrylate, sulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid, sulfonic acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate, and phosphorus-containing monomers such as 2-hydroxyethylacryloyl phosphate.
The blending ratio of the thermosetting resin is not particularly limited as long as the die bond films 3 and 3' exhibit the thermosetting function when heated under predetermined conditions, and is preferably within a range of 5 to 60 wt%, and more preferably within a range of 10 to 50 wt%.
The glass transition temperature (Tg) of the die bond films 3 and 3' before heat curing is preferably 25 to 60 ℃, more preferably 25 to 55 ℃, and still more preferably 25 to 50 ℃. By setting the glass transition temperature before thermal curing to 25 to 60 ℃, wafers can be laminated well. The measurement of the glass transition temperature of the die bond film before thermal curing can be performed by the following procedure. That is, the die-bonding film was stacked at 40 ℃ to a thickness of 100 μm and then cut into a long measuring piece having a width of 10 mm. Then, the loss tangent (tan. Delta.) at-30 to 280 ℃ was measured using a dynamic viscoelasticity measuring apparatus (RSA (III), manufactured by Rheometric Scientific, inc.) at a frequency of 10Hz and a temperature rise rate of 5 ℃/min. The glass transition temperature was determined from the peak value of tan δ at that time.
The die bond films 3 and 3' contain an epoxy resin, a phenol resin, and an acrylic resin, and when the total weight of the epoxy resin and the phenol resin is X and the weight of the acrylic resin is Y, X/(X + Y) is preferably 0.3 or more and less than 0.9, more preferably 0.35 or more and less than 0.85, and still more preferably 0.4 or more and less than 0.8. As the content of the epoxy resin and the phenol resin increases, the semiconductor wafer 4 is likely to be broken, and the adhesiveness to the semiconductor wafer decreases. Further, as the content of the acrylic resin increases, the die-bonding films 3 and 3' are less likely to crack at the time of bonding or handling, and are less likely to break. Therefore, by setting X/(X + Y) to 0.3 or more, it becomes easier to break the die bond films 3,3' simultaneously with the semiconductor wafer 4 when the semiconductor element 5 is obtained from the semiconductor wafer 4 by means of Stealth Dicing. Further, by making X/(X + Y) less than 0.9, the workability can be improved.
When the die-bonding films 3 and 3' of the present invention are crosslinked at a certain level in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer or the like may be added as a crosslinking agent in advance at the time of production. This improves the adhesion properties at high temperatures, and improves the heat resistance.
As the crosslinking agent, a conventionally known crosslinking agent can be used. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and adducts of polyols and diisocyanates are more preferable. The amount of the crosslinking agent added is preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. When the amount of the crosslinking agent is more than 7 parts by weight, the adhesive strength is undesirably reduced. On the other hand, less than 0.05 part by weight is not preferable because the cohesive force is insufficient. In addition, other polyfunctional compounds such as epoxy resins may be contained together with such polyisocyanate compounds as required.
In addition, the die bond films 3 and 3' may be appropriately mixed with a filler according to the use thereof. The incorporation of the filler makes it possible to impart electrical conductivity, improve thermal conductivity, adjust elastic modulus, and the like. The filler includes inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoint of improving properties such as handling property, thermal conductivity, adjustment of melt viscosity, and provision of thixotropy. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These can be used alone or in combination of 2 or more. From the viewpoint of improving the thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. In addition, from the viewpoint of a good balance of the above properties, crystalline silica or amorphous silica is preferable. For the purpose of imparting electrical conductivity, improving thermal conductivity, and the like, an electrically conductive substance (electrically conductive filler) may be used as the inorganic filler. Examples of the conductive filler include metal powders obtained by forming silver, aluminum, gold, copper, nickel, conductive alloys, etc. into spheres, needles, or flakes, metal oxides such as alumina, amorphous carbon black, graphite, and the like.
The average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. This is because the wettability and adhesiveness to an adherend can be improved by setting the average particle diameter of the filler to 0.005 μm or more. Further, by setting the thickness to 10 μm or less, the effect of the filler added to impart the above-described characteristics can be made sufficient, and heat resistance can be ensured. The average particle diameter of the filler was determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).
In the die-bonding film, when the total weight of the epoxy resin, the phenol resin, and the acrylic resin is a and the weight of the filler is B, B/(a + B) is preferably 0.1 or more and 0.7 or less, more preferably 0.1 or more and 0.65 or less, and still more preferably 0.1 or more and 0.6 or less. By setting the value to 0.7 or less, the tensile storage modulus can be prevented from increasing, and wettability and adhesiveness to an adherend can be improved. In addition, by setting the value to 0.1 or more, the die bond film can be appropriately broken by tensile stress.
In addition to the above-mentioned filler, other additives may be appropriately added to the die bond films 3 and 3' as needed. Examples of the other additives include a flame retardant, a silane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. These may be used alone or in combination of 2 or more. Examples of the silane coupling agent include β - (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, γ -glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, and γ -glycidoxypropylmethyldiethoxysilane. These compounds may be used alone or in combination of 2 or more. Examples of the ion scavenger include hydrotalcites and bismuth hydroxide. These may be used alone or in combination of 2 or more.
The thickness of the die-bonding films 3 and 3' (total thickness in the case of a laminate) is not particularly limited, and may be selected from the range of 1 to 200 μm, for example, preferably 5 to 100 μm, and more preferably 10 to 80 μm.
The die bond films 3,3' of the dicing die bond films 10, 12 are preferably protected by a separator (not shown). The separator functions as a protective material for protecting the die-bonding films 3 and 3' until it is put into practical use. The separator may also be used as a support base material when transferring the die bond films 3 and 3' to the pressure-sensitive adhesive layer 2. The separator is peeled off when the work is stuck to the die-bonding films 3 and 3' of the dicing die-bonding film. As the separator, a plastic film, paper, or the like, which is surface-coated with a release agent such as a fluorine-based release agent or a long chain alkyl acrylate-based release agent, may be used.
Preferably, the dicing die- bonding films 10 and 12 have a peel force at 0 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film higher than a peel force at 23 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film. This makes it possible to appropriately balance the holding force of the semiconductor wafer and/or the semiconductor element during dicing and the peeling property of the chip with the die bond film during picking up.
In the dicing die- bonding films 10 and 12, the peel force at 0 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film is preferably 0.15N/100mm or more and 5N/100mm or less, and more preferably 0.20N/100mm or more and 1N/100mm or less. If the peeling force between the dicing film and the die-bonding film is weak, peeling occurs at the interface between the die-bonding film and the dicing film during spreading, and as a result, a failure in breaking or a semiconductor element broken is scattered, and therefore the peeling force at 0 ℃. On the other hand, if the peeling force is too high, fracture failure may occur, and therefore, the upper limit is preferably not more than the above-mentioned limit.
In the dicing die- bonding films 10 and 12, the peel force at 23 ℃ between the pressure-sensitive adhesive layer and the thermosetting die-bonding film is preferably 0.05N/100mm or more and 2.5N/100mm or less, and more preferably 0.10N/100mm or more and 1N/100mm or less. In order to pick up the semiconductor element with the die-bonding film from the dicing film at normal temperature (23 ± 2 ℃), it is preferable to have light peelability. In particular, the semiconductor wafer of steath Dicing is thinner than the case of Dicing with a blade, and cracks are more likely to occur, and thus further reduction in peeling force is required. By setting the peeling force to the upper limit or less, good light peelability can be exhibited. On the other hand, when the peeling force is lower than the lower limit, the semiconductor element may be difficult to hold during transportation. When the pressure-sensitive adhesive layer is of a type in which the adhesive strength is reduced by ultraviolet irradiation, the peeling force after the ultraviolet irradiation may be within the above range.
< method for producing dicing die-bonding film >
The dicing die- bonding films 10 and 12 according to the present embodiment are produced, for example, as follows.
First, the substrate 1 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a rolling film forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and a dry lamination method.
Next, a pressure-sensitive adhesive composition solution is applied to the substrate 1 to form a coating film, and then the coating film is dried (heat-crosslinked if necessary) under predetermined conditions to form the pressure-sensitive adhesive layer 2. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are, for example, in the range of 80 to 150 ℃ for 0.5 to 5 minutes. Alternatively, the pressure-sensitive adhesive layer 2 may be formed by applying the pressure-sensitive adhesive composition to the separator to form a coating film and then drying the coating film under the above-described drying conditions. Then, the adhesive layer 2 is stuck to the substrate 1 together with the separator. Thus, the dicing film 11 is produced. In this case, the dicing film may be irradiated with ultraviolet rays in advance on the surface to be bonded with the die-bonding film.
The die-bonding films 3 and 3' are produced, for example, as follows.
First, an adhesive composition solution as a material for forming the die bond films 3 and 3' is prepared. The adhesive composition solution contains the adhesive composition, a filler, and various other additives as described above.
Next, the adhesive composition solution is applied to the substrate separator to form a coating film at a predetermined thickness, and then the coating film is dried under predetermined conditions to form an adhesive layer. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are, for example, in the range of drying temperature 70 to 160 ℃ and drying time 1 to 5 minutes. Alternatively, the adhesive layer may be formed by applying the adhesive composition solution to the separator to form a coating film and then drying the coating film under the above-described drying conditions. Then, the adhesive layer is stuck to the base release film together with the release film.
Next, the release film is peeled from the dicing film 11 and the adhesive layer, respectively, and the adhesive layer and the pressure-sensitive adhesive layer are bonded to each other so as to form a bonding surface. The attachment can be performed by, for example, pressure bonding. In this case, the laminating temperature is not particularly limited, but is, for example, preferably 30 to 50 ℃ and more preferably 35 to 45 ℃. The linear pressure is not particularly limited, but is, for example, preferably 0.1 to 20kgf/cm, more preferably 1 to 10kgf/cm. Subsequently, the base separator on the adhesive layer is peeled off to obtain a dicing die-bonding film of the present embodiment.
When a dicing die-bonding film is produced using a long substrate, a roll-to-roll method can be suitably employed. The long substrate wound in a roll shape is sent out, and an adhesive layer is formed on the conveyed substrate according to a general method to prepare a dicing film. In general, the adhesive layer is covered with a separator film and then wound up again in a roll shape. Then, the separator is peeled off as the dicing film is fed from the roll. A die bonding film formed on the separator is separately prepared, and the die bonding film is adhered to the adhesive layer of the dicing film while the dicing film and the die bonding film are being conveyed in synchronization. Thus, a long dicing die-bonding film is obtained in which a die-bonding film is provided on a long dicing film having a long base material and a pressure-sensitive adhesive layer at predetermined intervals. The long dicing die-bonding film may be further wound into a roll to form a dicing die-bonding film roll.
When a strong tension is applied to the base material during conveyance by the roll-to-roll method, anisotropy may occur in the base material, and this may cause anisotropy in the tensile properties of the dicing film and the dicing/die bonding film. The tension at the time of conveyance is preferably 0.01N/mm or more and 1N/mm or less, more preferably 0.05N/mm or more and 0.5N/mm or less, from the viewpoint of reducing the anisotropy of the base material.
< method for manufacturing semiconductor device >
Next, a method for manufacturing a semiconductor device using the dicing die-bonding film 12 will be described with reference to fig. 3 to 6. Fig. 3 to 6 are schematic cross-sectional views for explaining a method of manufacturing a semiconductor device according to this embodiment. First, the lines to divide 4L of the semiconductor wafer 4 are irradiated with laser light, and modified regions are formed in the lines to divide 4L. The method comprises the following steps: a method of forming a modified region in a semiconductor wafer by applying laser light along predetermined dividing lines in a lattice shape while aligning a light-converging point in the semiconductor wafer and by ablation by multiphoton absorption. The laser irradiation conditions may be appropriately adjusted within the following condition ranges.
(conditions for laser irradiation)
(A) Laser
Figure BDA0000691667270000231
(B) Lens for condensing light
Multiplying power of 100 times or less
NA 0.55
Transmittance of 100% or less with respect to laser wavelength
(C) The moving speed of the mounting table for mounting the semiconductor substrate is below 280 mm/s
The method of forming the modified regions in the lines to divide 4L by irradiating with laser light is described in detail in japanese patent nos. 3408805 and 2003-338567, and therefore, the detailed description thereof is omitted here.
Next, as shown in fig. 4, the semiconductor wafer 4 after the modified region is formed is pressure-bonded to the die-bonding film 3' and fixed by being bonded and held (mounting step). This step is performed while being pressed by a pressing device such as a pressure roller. The temperature for attachment is not particularly limited, but is preferably in the range of 40 to 80 ℃. This is because the warpage of the semiconductor wafer 4 can be effectively prevented and the influence of the expansion and contraction of the dicing die-bonding film can be reduced.
Next, by applying a tensile stress to the dicing die-bonding film 12, the semiconductor wafer 4 and the die-bonding film 3' are broken along the lines to divide 4L, thereby forming the semiconductor chip 5 (chip forming step). In this step, for example, a commercially available wafer expanding apparatus can be used. Specifically, as shown in fig. 5 (a), the dicing ring 31 is attached to the peripheral edge portion of the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 12 to which the semiconductor wafer 4 is attached, and then fixed to the wafer spreading device 32. Next, as shown in fig. 5 (b), the push-up portion 33 is raised to apply tension to the dicing die-bonding film 12 and expand it.
The chip formation step is preferably carried out at-20 ℃ to 15 ℃, more preferably at-20 ℃ to 5 ℃, and still more preferably at-15 ℃ to 0 ℃. By performing the chip formation step under the low temperature condition as described above, the chip bonding film 3' can be efficiently broken, and as a result, the manufacturing efficiency can be improved.
In the chip formation step, the spreading speed (the speed at which the pushing-up portion rises) is preferably 100 to 400 mm/sec, more preferably 100 to 350 mm/sec, and still more preferably 100 to 300 mm/sec. By setting the spreading speed to be equal to or higher than the lower limit, the semiconductor wafer 4 and the die-bonding film 3' can be easily broken substantially simultaneously. Further, by setting the spreading speed to the upper limit or less, the dicing film 11 can be prevented from being broken.
In the chip formation step, the amount of expansion is preferably 6 to 12%. The amount of expansion may be appropriately adjusted within the above numerical range according to the size of a chip to be formed. In the present embodiment, the amount of expansion is a value (%) where the surface area of the cut film before expansion is 100% and the surface area increased by expansion. By setting the amount of expansion to 6% or more, the semiconductor wafer 4 and the die-bonding film 3 can be easily broken. Further, by setting the amount of spread to 12% or less, the dicing film 11 can be prevented from breaking.
By applying tensile stress to the dicing die-bonding film 12 in this manner, cracks can be generated in the thickness direction of the semiconductor wafer 4 from the modified region of the semiconductor wafer 4 as a starting point, and the die-bonding film 3 'in close contact with the semiconductor wafer 4 can be broken, whereby the semiconductor chip 5 with the die-bonding film 3' can be obtained.
Next, in order to peel off the semiconductor chip 5 adhesively fixed to the dicing die-bonding film 12, the semiconductor chip 5 is picked up (pickup step). The method of picking up is not particularly limited, and various conventionally known methods can be employed. Examples thereof include: a method of lifting up each semiconductor chip 5 from the dicing die-bonding film 12 side by a needle, and picking up the lifted-up semiconductor chip 5 by a pick-up device, and the like.
Here, since the adhesive layer 2 is ultraviolet-curable, the pickup is performed after the adhesive layer 2 is irradiated with ultraviolet rays. This reduces the adhesive strength of the adhesive layer 2 to the die-bonding film 3', and facilitates the peeling of the semiconductor chip 5. As a result, the semiconductor chip 5 can be picked up without being damaged. Conditions such as irradiation intensity and irradiation time in the ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. When a dicing die-bonding film in which a die-bonding film is attached to an ultraviolet-cured dicing film is used, the ultraviolet irradiation is not required here.
Next, as shown in fig. 6, the picked-up semiconductor chip 5 is die-bonded to the adherend 6 with the die bonding film 3' interposed therebetween (temporary fixing step). The adherend 6 may be a lead frame, a TAB film, a substrate, a separately produced semiconductor chip, or the like. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or may be a non-deformable adherend (semiconductor wafer or the like) that is hardly deformed.
As the substrate, a conventionally known substrate can be used. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board which can be used by bonding and fixing a semiconductor element and electrically connecting the semiconductor element.
The shear adhesion at 25 ℃ at the time of temporary fixation of the die-bonding film 3' is preferably 0.2MPa or more, more preferably 0.2 to 10MPa, with respect to the adherend 6. When the shear adhesion of the die-bonding film 3 is at least 0.2MPa, shear deformation is less likely to occur in the adhesive surface between the die-bonding film 3 and the semiconductor chip 5 or the adherend 6 due to ultrasonic vibration and heating in the wire bonding step. That is, the semiconductor element is less likely to move due to ultrasonic vibration at the time of wire bonding, thereby preventing a decrease in the success rate of wire bonding. The shear adhesion at 175 ℃ at the time of temporary fixation of the die-bonding film 3' is preferably 0.01MPa or more, and more preferably 0.01 to 5MPa, with respect to the adherend 6.
Next, wire bonding is performed in which the tip of the terminal portion (inner lead) of the adherend 6 is electrically connected to an electrode pad (not shown) on the semiconductor chip 5 by a bonding wire 7 (wire bonding step). Examples of the bonding wire 7 include a gold wire, an aluminum wire, and a copper wire. The temperature at the time of wire bonding is 80 to 250 ℃, preferably 80 to 220 ℃. The heating time is several seconds to several minutes. The wire connection is performed by using vibration energy by ultrasonic waves and pressure bonding energy by applying pressure in combination in a state of being heated to the temperature range. This step can be performed without thermosetting the die-bonding film 3 a. In the process of this step, the semiconductor chip 5 and the adherend 6 are not fixed to each other by the die bonding film 3 a.
Next, the semiconductor chip 5 is encapsulated with the encapsulating resin 8 (encapsulating step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a resin for sealing with a mold. As the encapsulating resin 8, for example, an epoxy resin is used. The heating temperature in resin sealing is usually 175 ℃ for 60 to 90 seconds, but the present invention is not limited thereto, and curing may be carried out at 165 to 185 ℃ for several minutes, for example. Thereby, the encapsulating resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed with the die bonding film 3 interposed therebetween. That is, in the present invention, even when the post-curing step described later is not performed, the die-bonding film 3 can be fixed in this step, and this can contribute to reduction in the number of manufacturing steps and reduction in the manufacturing period of the semiconductor device.
In the post-curing step, the sealing resin 8 that has not been cured sufficiently in the sealing step is completely cured. Even when the die bond film 3a is not completely thermally cured in the sealing step, the sealing resin 8 and the die bond film 3a can be completely thermally cured in this step. The heating temperature in this step varies depending on the type of the sealing resin, and is, for example, in the range of 165 to 185 ℃ and the heating time is about 0.5 to 8 hours.
In the above embodiment, the case where the wire bonding step is performed without completely thermosetting the die bonding film 3 'after the semiconductor chip 5 with the die bonding film 3' is temporarily fixed to the adherend 6 has been described. However, in the present invention, the following ordinary die bonding step may be performed: after the semiconductor chip 5 with the die-bonding film 3 'is temporarily fixed to the adherend 6, the die-bonding film 3' is thermally cured, and then, a wire bonding step is performed. In this case, the die-bonding film 3' after thermosetting preferably has a shear adhesion of 0.01MPa or more, more preferably 0.01 to 5MPa, at 175 ℃. This is because the shear adhesion at 175 ℃ after heat curing is set to 0.01MPa or more, and thus shear deformation of the adhesive surface of the die bonding film 3' and the semiconductor chip 5 or the adherend 6 due to ultrasonic vibration and heating at the time of the wire bonding step can be prevented.
The dicing die-bonding film of the present invention can be suitably used also in the case where a plurality of semiconductor chips are stacked and three-dimensionally mounted. In this case, the die bond film and the spacer may be stacked between the semiconductor chips, or only the die bond film may be stacked between the semiconductor chips without stacking the spacer, and the manufacturing conditions, the application, and the like may be appropriately changed.
Examples
Hereinafter, preferred embodiments of the present invention will be described in detail by way of examples. However, the materials, amounts of blending, and the like described in the examples are not intended to limit the gist of the present invention to these, unless otherwise specified.
< examples 1 to 3 and comparative examples 1 to 2>
Production of cut film
Production example 1
76 parts of 2-ethylhexyl acrylate (2 EHA), 24 parts of 2-hydroxyethyl acrylate (HEA), 0.2 part of benzoyl peroxide and 60 parts of toluene were charged into a reaction vessel equipped with a condenser, a nitrogen inlet, a thermometer and a stirrer, and polymerization was carried out at 61 ℃ for 6 hours in a nitrogen stream to obtain an acrylic polymer A. The molar ratio of 2EHA to HEA was set at 100mol to 20mol.
To this acrylic polymer A, 10 parts (80 mol% to HEA) of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as "MOI") was added, and the mixture was subjected to an addition reaction at 50 ℃ for 48 hours in an air stream to obtain an acrylic polymer A'.
Subsequently, 6 parts of an isocyanate-based crosslinking agent (trade name "CORONATE L", manufactured by japan polyurethane corporation) and 4 parts of a photopolymerization initiator (trade name "IRGACURE 651", manufactured by Ciba Specialty Chemicals Corp) were added to 100 parts of the acrylic polymer a' to prepare a pressure-sensitive adhesive solution.
The adhesive solution prepared above was coated on the silicone-treated surface of the PET release liner, and heat-crosslinked at 120 ℃ for 2 minutes to form an adhesive layer precursor having a thickness of 30 μm. Next, a base film having a 2-layer structure of a polypropylene layer and a polyethylene layer and a thickness of 80 μm was prepared, and the base film was attached to the surface of the pressure-sensitive adhesive precursor with the polypropylene layer as an adhesive surface. Then, the mixture was stored at 50 ℃ for 24 hours. The pressure-sensitive adhesive layer was formed by irradiating ultraviolet light only to a portion (diameter: 220 mm) of the pressure-sensitive adhesive layer precursor corresponding to the bonded portion (diameter: 200 mm) of the semiconductor wafer. Thus, a dicing film a of this production example was produced. The irradiation conditions are as follows.
< conditions for ultraviolet irradiation >
Ultraviolet (UV) irradiation device: high-pressure mercury lamp
Cumulative amount of ultraviolet irradiation light: 500mJ/cm 2
Power: 120W
Irradiation intensity: 200mW/cm 2
Production example 2
A dicing film B was produced in the same manner as in production example 1, except that a base film having a thickness of 100 μm and a 2-layer structure of a polypropylene layer and a polyethylene layer was prepared as a base film, and the base film was attached to the surface of the pressure-sensitive adhesive precursor with the polypropylene layer as the adhesive surface.
Production example 3
A dicing film C was produced in the same manner as in production example 1, except that a 40 μm thick base film having a 1-layer structure formed by blending polypropylene and polyethylene was prepared and was attached to the surface of the pressure-sensitive adhesive precursor.
Production example 4
A dicing film D was produced in the same manner as in production example 1, except that a 90 μm thick base film having a 3-layer structure including a polypropylene-polyethylene blend layer, an ethylene-vinyl acetate copolymer layer, and a polypropylene-polyethylene blend layer was prepared as the base film, and the base film was attached to the surface of the adhesive precursor with any blend layer as the adhesive surface.
Production of die-bonding film
Production example 5
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6 wt%.
( a) An acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by Nagase Chemtex Corporation, SG-P3, glass transition temperature: 15 deg.C )
48 parts by weight
(b) Epoxy resin (KI-3000 manufactured by Tokyo Kabushiki Kaisha, epoxy equivalent 105, softening point 70 ℃ C.)
6 parts by weight of
(c) Phenol resin (MEH-7800M, hydroxyl equivalent 175, manufactured by Minghe chemical Co., ltd.)
6 parts by weight of
(d) Filler (ADMATECHS CO., LTD. Manufactured, SO-E2, fused spherical silica, average particle diameter 0.5 μm)
40 parts by weight of
This adhesive composition solution was applied to a release-treated film (release liner) comprising a polyethylene terephthalate film having a thickness of 50 μm and subjected to silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die-bonding film A having a thickness of 10 μm was produced.
Production example 6
The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6 wt%.
( a) An acrylate-based polymer containing ethyl acrylate-methyl methacrylate as a main component (manufactured by Nagase Chemtex Corporation, SG-P3, glass transition temperature: 15 deg.C )
32 parts by weight
(b) Epoxy resin (KI-3000, epoxy equivalent 105, softening point 70 ℃ C., manufactured by DONDKOKAI CHEMICAL CO., LTD.)
4 parts by weight of
(c) Phenol resin (MEH-7800M, hydroxyl equivalent 175, manufactured by Minghe chemical Co., ltd.)
4 parts by weight of
(d) 60 parts by weight of a filler (ADMATECHS CO., manufactured by LTD., SO-E2, fused spherical silica, average particle diameter 0.5 μm)
(e) 0.05 part by weight of a silane coupling agent (KBM-403, manufactured by shin-Etsu chemical Co., ltd.)
This adhesive composition solution was applied to a release-treated film (release liner) comprising a polyethylene terephthalate film having a thickness of 50 μm and subjected to silicone release treatment, and then dried at 130 ℃ for 2 minutes. Thus, a die bond film B having a thickness of 10 μm was produced.
Manufacture of dicing die-bonding film
The die-bonding film and the dicing film were pasted at a lamination temperature of 40 ℃ and a line pressure of 2kgf/cm in accordance with the combinations shown in Table 1, and they were respectively described as dicing/die-bonding films A to E of examples and comparative examples.
(measurement of storage modulus at 23 ℃ C.)
For the cut films A to D, the storage modulus in the MD direction and TD direction at 23 ℃ were measured, respectively. Specifically, the dicing film was cut into a length of 10mm by 50mm in width by a dicing blade, and the length was measured at a distance of 10mm between chucks and a drawing speed of 50mm/min by using an Autograph (AGS-J, manufactured by Shimadzu corporation). From the obtained SS curve, the storage modulus was determined using the value at the time of 3% elongation. The total value of the thicknesses of the substrate and the adhesive layer used as the thickness of the sample was calculated. The results are shown in Table 1.
(measurement of storage modulus at 0 ℃ C.)
For the cut films A to D, the storage modulus in the MD direction and TD direction at 0 ℃ were measured, respectively. Specifically, the dicing film was cut into a length of 10mm by 50mm in width by a cutter knife, and the measurement was carried out at a distance of 10mm between chucks and a drawing speed of 50mm/min by using an Autograph (manufactured by Shimadzu corporation). From the obtained SS curve, the storage modulus was determined using the value at the time of 3% elongation. The total value of the thicknesses of the substrate and the adhesive layer used as the thickness of the sample was calculated. The results are shown in Table 1.
(confirmation of cleavage Property)
As a laser processing apparatus, a converging point was aligned inside a semiconductor wafer using ML300-Integration manufactured by tokyo co, and laser light was irradiated from the front surface side of the semiconductor wafer along planned dividing lines in a lattice shape (10 mm × 10 mm) to form a modified region inside the semiconductor wafer. A silicon wafer (thickness: 75 μm, outer diameter: 12 inches) was used as the semiconductor wafer. The laser irradiation conditions were as follows.
(A) Laser
Figure BDA0000691667270000311
(B) Lens for condensing light
Multiplying power of 50 times
NA 0.55
Transmittance of 60% for laser wavelength
(C) The moving speed of a mounting table for mounting a semiconductor substrate is 100 mm/sec
After the semiconductor wafers pretreated with laser light were attached to the dicing die-bonding films a to E, a fracture test was performed. The fracture test was carried out at an extension temperature of 0 ℃. The spreading rate was set at 400 mm/sec, and the spreading amount was set at 6%. As a result of the expansion, the number of chips in which the chip and the die-bonding film were successfully broken along the planned dividing line was counted for 100 chips in the central portion of the semiconductor wafer, and the ratio thereof was obtained. The results are shown in Table 1.
(measurement of Peel force)
An adhesive tape (product name; BT-315, manufactured by ritong electrical corporation) was attached to the dicing die-bonding film at normal temperature to reinforce the dicing die-bonding film. Cut into pieces of 100mm in width by 120mm in length with a cutter knife. Then, the pressure-sensitive adhesive layer of the dicing film and the die-bonding film were sandwiched, and the force (maximum load, unit: N/100 mm) at which the pressure-sensitive adhesive layer and the die-bonding film were peeled off in a T-peel test at a peeling speed of 300mm/min was read at 0 ℃ and 23 ℃ respectively using a tensile tester (product name; AGS-J, manufactured by Shimadzu corporation). The results are shown in Table 1.
TABLE 1
Figure BDA0000691667270000321
The dicing die-bonding film of the embodiment has good fracture properties by laser dicing. Further, the results below were obtained that the peeling force at 0 ℃ was high and the holding property of the semiconductor wafer was excellent, while the peeling force at 23 ℃ was low and the pickup property was excellent. On the other hand, the dicing die-bonding films of comparative examples 1 and 2 had poor fracture properties by laser dicing because of large variations in physical properties in the TD direction and the MD direction.

Claims (7)

1. A dicing die-bonding film comprising a dicing film and a thermosetting die-bonding film provided on an adhesive layer of the dicing film, wherein the dicing film comprises a base material and an adhesive layer provided on the base material,
e 'is a storage modulus in the MD direction obtained from a stress-strain curve of the cut film under a tensile stress at 0 ℃ in the MD direction and the TD direction' MD1 And the storage modulus in the TD direction is E' TD1 Of is E' MD1 /E’ TD1 Is 0.75 to 1.25 inclusive,
storage modulus E 'of the cut film' TD1 Is 30MPa or more and 100MPa or less,
the storage modulus E' MD1 And the storage modulus E' TD1 The absolute value of the difference is 1 to 50 inclusive,
the substrate comprises more than 2 multilayers.
2. The dicing/die-bonding film according to claim 1, wherein the storage modulus E' MD1 Is 10MPa or more and 100MPa or less.
3. The dicing die-bonding film according to claim 1, wherein a peel force at 0 ℃ between the adhesive layer and the thermosetting die-bonding film is higher than a peel force at 23 ℃ between the adhesive layer and the thermosetting die-bonding film.
4. The dicing die-bonding film according to claim 3, wherein a peel force at 0 ℃ between the adhesive layer and the thermosetting die-bonding film is 0.15N/100mm or more and 5N/100mm or less.
5. The dicing die-bonding film according to claim 3, wherein a peel force at 23 ℃ between the adhesive layer and the thermosetting die-bonding film is 0.05N/100mm or more and 2.5N/100mm or less.
6. The dicing die-bonding film according to any one of claims 1 to 5, which is used for a method for manufacturing a semiconductor device in which a semiconductor wafer is irradiated with laser light to form a modified region, and then the semiconductor wafer is broken along the modified region to obtain a semiconductor device.
7. A method for manufacturing a semiconductor device, comprising the steps of:
irradiating a predetermined dividing line of a semiconductor wafer with laser light to form a modified region along the predetermined dividing line;
a step of attaching the semiconductor wafer on which the modified region is formed to the dicing die-bonding film according to any one of claims 1 to 6;
a step of forming a semiconductor element by applying a tensile stress to the dicing die-bonding film at-20 ℃ to 15 ℃ to break the semiconductor wafer and the die-bonding film of the dicing die-bonding film along the planned dividing line;
picking up the semiconductor element together with the die bond film; and
and a step of die-bonding the picked-up semiconductor element to an adherend via the die-bonding film.
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