TWI664263B - Manufacturing method of thermosetting type sticky crystal film, cut crystal sticky film and semiconductor device - Google Patents

Abstract

The present invention provides a thermosetting type viscous crystal film which is better fractured due to tensile stress at a low temperature and uses thereof. A heat-hardening type viscous film. Before heat curing, the storage elastic modulus A at 0 ° C is above 1 GPa, the loss elastic modulus B at 0 ° C is below 500 MPa, and the loss tangent C at 0 ° C is below 0.1. The glass transition temperature D exceeds 0 ° C., and the ratio E of the absolute value of the glass transition temperature D to the absolute value of the loss tangent C is 600 or more.

Description

Manufacturing method of thermosetting type sticky crystal film, cut crystal sticky film and semiconductor device

The invention relates to a method for manufacturing a thermosetting type die-bonding film, a cut crystal die-bonding film and a semiconductor device.

Previously, in the manufacturing steps of semiconductor devices, it was proposed to hold the semiconductor wafer in the dicing step, and also to provide a dicing die-bonding film of an adhesive layer for wafer fixing required for the mounting step (for example, refer to Patent Literature). 1). The cut crystal sticky film is formed by providing an adhesive layer on a cut crystal film having a supporting substrate and an adhesive layer, and the semiconductor crystal is cut with a blade (so-called blade cut crystal) with the use of the adhesive layer. After the circle is rounded, the dicing film is extended in the expand step, and then the singulated wafer is picked up with the adhesive layer, recovered one by one, and fixed to the adherend such as the lead frame through the adhesive layer. .

In the case of dicing by a blade, it is necessary to cut the die attach film together with the semiconductor wafer. However, in the conventional dicing method using a diamond blade, there is concern about the adhesion of the die-bonding film and the dicing film due to the influence of heat generated during dicing, and the adhesion and cutting of semiconductor wafers to each other due to the generation of chips. Adhesion to the side of the semiconductor wafer, fragments in the case of thin semiconductor wafers, etc., therefore, the cutting speed must be slowed down, resulting in an increase in cost.

Therefore, in recent years, the following method has been proposed: a method of forming grooves on the surface of a semiconductor wafer, and then performing backside grinding to obtain each semiconductor wafer (hereinafter, also referred to as "DBG (Dicing Before Grinding; "Thin) method"; for example, refer to Patent Document 2); or irradiate laser light to a predetermined division line of a semiconductor wafer to form a modified region, so that the semiconductor wafer can be easily divided along the predetermined division line and then stretched. The method of obtaining the individual semiconductor wafers by breaking the semiconductor wafer with stress (hereinafter also referred to as "Stealth Dicing (registered trademark)" (for example, refer to Patent Documents 3 and 4). According to these methods, in particular, When the thickness of the semiconductor wafer is thin, the occurrence of defects such as debris can be reduced, and the notch width (notch edge) can be made narrower than before, thereby improving the yield of the semiconductor wafer.

[Prior technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2008-218571

[Patent Document 2] Japanese Patent Laid-Open No. 2003-007649

[Patent Document 3] Japanese Patent Laid-Open No. 2002-192370

[Patent Document 4] Japanese Patent Laid-Open No. 2003-338467

In order to obtain each semiconductor wafer with a viscous film using the DBG method or Stealth Dicing while the viscous film is maintained, the tensile stress in the expansion step must be used to break the viscous film and the semiconductor wafer together. Here, in the DBG method or Stealth Dicing, a method of expanding at a low temperature (for example, 0 ° C.) is being proposed in order to improve the fracture property of the viscous crystal film. However, if the previous die-bonding film is expanded at a low temperature, a defect that the semiconductor wafer or the die-bonding film is not locally broken will occur, which will result in a decrease in the manufacturing yield of the semiconductor device.

The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a thermosetting type viscous crystal film which is preferably fractured due to tensile stress at a low temperature and an application thereof.

In order to solve the above-mentioned problems, the inventors of the present application focused on the low-temperature characteristics of the viscous crystal film and conducted intensive research, and as a result, completed the present invention.

That is, the present invention relates to a thermosetting type viscous crystal film, the storage elastic modulus A of which is 1 GPa or more at 0 ° C before the thermosetting, The loss elastic modulus B at 0 ° C is below 500 MPa, the loss tangent C (= B / A) at 0 ° C is below 0.1, the glass transition temperature D exceeds 0 ° C, and the absolute value of the glass transition temperature D is relative to the above The ratio E (= D / C) of the absolute value of the loss tangent C is 600 or more.

This thermosetting type viscous film (hereinafter also referred to simply as "sticky film") sets the characteristics at a low temperature (0 ° C) before thermal curing to a specific range and improves fracture properties, so it can be subjected to tensile stress at low temperatures It is better to break under load. When the storage elastic modulus A is too low, or the loss elastic modulus B is too high, or the loss tangent C is too high, or the glass transition temperature D is too low, or the above-mentioned ratio is too low, The softness or stickiness is increased, and therefore the breakability is reduced. In addition, the measurement method of each characteristic is based on description of an Example.

In this thermosetting type viscous film, the elongation at break at 0 ° C before the thermosetting is preferably 100% or less. Thereby, it is possible to prevent excessive elongation when expanding the viscous crystal film, and it is possible to better break. The method for measuring the elongation at break is described in the examples.

The thermosetting type viscous film includes an inorganic filler, and the content of the inorganic filler is preferably 10% by weight or more and 90% by weight or less. By including the inorganic filler in a specific amount, it is easy to set each low-temperature characteristic of the adhesive film to a specific range.

The thermosetting type viscous film is preferably a thermosetting resin which is solid at 23 ° C. This makes it possible to suppress the softness at a low temperature and improve the breakability.

In the present invention, a cut crystal adhesive film is also included. The thermosetting adhesive film is laminated on a cut crystal film formed by laminating an adhesive on a substrate.

In addition, in the present invention, a method for manufacturing a semiconductor device is also included, which is a method for manufacturing a semiconductor device using the dicing die-bonding film, and includes the following steps: irradiating laser light on a predetermined division line of a semiconductor wafer, A step of forming a modified region on the predetermined dividing line; and a step of attaching the semiconductor wafer after the formation of the modified region to the above-mentioned die-bonding film Step; at a temperature of -30 ° C to 20 ° C, applying tensile stress to the above-mentioned die-bonded crystal film, thereby causing the semiconductor wafer and the die-bond film constituting the above-mentioned die-bonded film to follow the predetermined division line A step of breaking to form a semiconductor element; a step of picking up the semiconductor element together with the sticky film; and a step of sticking the picked up semiconductor element to the adherend through the sticky film.

The present invention also includes a method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device using the die-cut die-bond film, and includes the following steps: forming a groove on the surface of the semiconductor wafer that does not reach the back surface ; Performing the step of grinding the back surface of the semiconductor wafer to expose the groove from the back surface; attaching the semiconductor wafer having the groove from the back surface to the above-mentioned die-bonding film; at -30 ° C to 20 ° C; Under the conditions, a step of applying a tensile stress to the above-mentioned die-bonded crystal film to break the die-bond film constituting the above-mentioned die-bonded film to form a semiconductor element; a step of picking up the semiconductor element together with the above-mentioned die-bond film And a step of sticking the picked-up semiconductor device to the adherend through the sticky film.

Any of the manufacturing methods uses a cut crystal cement film having a low-temperature fracture crystal film, and therefore, the load of tensile stress at low temperature can also cause the viscous film to fracture better, which can improve manufacturing efficiency.

1‧‧‧ substrate

2‧‧‧ Adhesive layer

2a‧‧‧Adhesive layer 2 corresponding to the semiconductor wafer attachment portion

2b‧‧‧Other parts

3, 3'‧‧‧ sticky crystal film (thermosetting type sticky crystal film)

3a‧‧‧Semiconductor wafer attachment part

3b ‧‧‧ Other than semiconductor wafer attachment part

4‧‧‧ semiconductor wafer

4L‧‧‧ divided scheduled line

5‧‧‧ semiconductor wafer

6‧‧‧ adherent

7‧‧‧ bonding wire

8‧‧‧sealing resin

10, 12‧‧‧ cut crystal

11‧‧‧ cut crystal film

31‧‧‧cut crystal ring

32‧‧‧Wafer expansion device

33‧‧‧ Push Up Department

FIG. 1 is a schematic cross-sectional view of a cut crystal adhesive film according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a cut crystal and sticking film according to another embodiment of the present invention.

FIG. 3 is a cross-sectional view for explaining a method of manufacturing a semiconductor device according to this embodiment. intention.

FIG. 4 is a schematic cross-sectional view for explaining a method of manufacturing a semiconductor device according to this embodiment.

5 (a) and 5 (b) are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to this embodiment.

FIG. 6 is a schematic cross-sectional view for explaining a method of manufacturing a semiconductor device according to this embodiment.

7 (a) and 7 (b) are schematic cross-sectional views for explaining another method of manufacturing a semiconductor device according to this embodiment.

FIG. 8 is a schematic cross-sectional view for explaining another manufacturing method of the semiconductor device according to this embodiment.

Embodiments of the present invention will be described below with reference to the drawings. However, in a part or all of the drawings, parts that do not need to be explained are omitted, and there are parts that are shown enlarged or reduced for ease of explanation. Unless specifically mentioned, the terms indicating the positional relationship between the upper and lower levels are not intended to limit the constitution of the present invention for the sake of simplicity.

"First Embodiment" <Cut crystal film>

The cut crystal and sticky film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view of a cut crystal adhesive film according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing a cut crystal and sticking film according to another embodiment of the present invention. However, in some or all of the drawings, parts that do not need to be described are omitted, and there are parts that are shown enlarged or reduced for ease of explanation.

As shown in FIG. 1, the cut crystal sticky film 10 has a structure in which a stick crystal film 3 is laminated on the cut film 11. The cut crystal film 11 is formed by laminating an adhesive layer 2 on a base material 1, and an adhesive film 3 is disposed on the adhesive layer 2. In addition, the present invention can also be a dicing die-bonding film 12 as shown in FIG. The semiconductor wafer has a structure in which an adhesive film 3 'is formed on the pasting portion.

(Cut crystal film)

It is preferable that the said base material 1 has ultraviolet transmittance | permeability, and becomes the intensity | strength matrix of the cut-crystal-adhesion film 10,12. Examples include low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, and polybutylene. Polyolefin such as olefin, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic copolymer, ethylene- (meth) acrylate (random, alternating) copolymer , Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide , Polyether ether ketone, polyimide, polyether imide, polyimide, fully aromatic polyimide, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, polyvinyl chloride , Polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, etc.

Examples of the material of the substrate 1 include polymers such as a crosslinked body of the resin. The above plastic film can be used in an unstretched state, and a film which is subjected to a uniaxial or biaxial stretching treatment as required. By using a resin sheet that imparts heat shrinkability by extension processing or the like, it is possible to thermally shrink the substrate 1 after dicing, thereby reducing the bonding area between the adhesive layer 2 and the die-bond films 3 and 3 ', and realizing semiconductors. Recycling of wafers (semiconductor elements) is facilitated.

The surface of the substrate 1 can be subjected to conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, etc. in order to improve the adhesion and retention with adjacent layers. Or a physical treatment, based on the coating treatment of a primer (for example, the following adhesive substance). The substrate 1 may be selected from the same kind or different kinds of materials, and may be used by blending a plurality of kinds of materials as required. In addition, in order to impart antistatic ability to the substrate 1, a vapor-deposited layer containing a conductive material having a thickness of about 30 to 500 Å, including metal, alloy, and oxides thereof, may be provided on the substrate 1. The substrate 1 may be a single layer or a multilayer of two or more types.

The thickness of the substrate 1 may be appropriately determined without any particular limitation, and is usually about 5 to 200 μm. right.

It is preferable that the said adhesive layer 2 consists of an ultraviolet curable adhesive. The UV-curable adhesive increases the degree of cross-linking due to the irradiation of ultraviolet rays, and can easily reduce its adhesive force. Only the portion 2a of the adhesive layer 2 shown in FIG. 2 corresponding to the semiconductor wafer attachment portion is carried out. Irradiation with ultraviolet rays can set a difference in adhesion with other portions 2b.

In addition, by curing the ultraviolet-curable adhesive layer 2 according to the adhesive film 3 ′ shown in FIG. 2, it is possible to easily form the above-mentioned portion 2 a with significantly reduced adhesive force. Since the viscous film 3 'is attached to the above-mentioned part 2a which is hardened and the adhesive force is reduced, the interface between the above-mentioned part 2a of the adhesive layer 2 and the viscous film 3' has the property of being easily peeled off when picked up. On the other hand, the portion not irradiated with ultraviolet rays has sufficient adhesive force to form the above portion 2b.

As described above, in the adhesive layer 2 of the cut crystal adhesive film 10 shown in FIG. 1, the above-mentioned portion 2 b formed by the unhardened ultraviolet curing adhesive is adhered to the adhesive film 3, which can ensure the retention during the cutting. force. In this way, the UV-curable adhesive can well support the sticking film 3 for bonding the semiconductor wafer to an adherend such as a substrate with a good adhesion / peeling balance. In the adhesive layer 2 of the dicing die-bonding film 12 shown in FIG. 2, the above portion 2 b can fix the wafer ring.

The ultraviolet-curable adhesive can be used without particular limitation, and it can have an ultraviolet-curable functional group such as a carbon-carbon double bond and exhibit adhesiveness. Examples of the UV-curable adhesive include an additive type UV-curable adhesive prepared by mixing an ultraviolet-curable monomer component or an oligomer component in a general pressure-sensitive adhesive such as an acrylic adhesive and a rubber-based adhesive. Adhesive.

As the pressure-sensitive adhesive, it is preferable to use an acrylic polymer as the cleaning property of semiconductor wafers, glass, and other electronic components that are not to be contaminated, such as the use of ultrapure water or organic solvents such as alcohol. Acrylic adhesive for base polymer.

Examples of the acrylic polymer include an alkyl (meth) acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, Tributyl, pentyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecane Alkyl esters, tridecyl esters, tetradecyl esters, cetyl esters, octadecyl esters, eicosyl esters, and the like have 1 to 30 carbon atoms, especially 4 to 18 carbon atoms. One or two or more of linear or branched alkyl esters, etc.) and cyclomethacrylates (for example, cyclopentyl ester, cyclohexyl ester, etc.) as acrylic monomers Polymer, etc. In addition, (meth) acrylate means an acrylate and / or a methacrylate, and (meth) in this invention has the same meaning.

The acrylic polymer may include units corresponding to other monomer components that can be copolymerized with the alkyl (meth) acrylate or cycloalkyl ester, if necessary, for the purpose of modifying cohesive strength, heat resistance, and the like. Examples of such monomer components include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Monomers containing carboxyl groups; anhydride monomers such as maleic anhydride, itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate , 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (meth) acrylic acid (4-hydroxymethylcyclohexyl) methyl ester and other hydroxyl-containing monomers; styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (methyl ) Sulfuric acid group-containing monomers such as acrylamine propanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acrylic acid naphthalenesulfonic acid; Phosphate-based monomers; acrylamide, acrylonitrile, etc. These copolymerizable monomer components may be used singly or in combination of two or more kinds. The use amount of these copolymerizable monomers is preferably 40% by weight or less of the total monomer components.

Furthermore, the said acrylic polymer may contain a polyfunctional monomer etc. as a comonomer component as needed for the crosslinking. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, Neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (methyl) Acrylate), dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The use amount of the polyfunctional monomer is preferably 30% by weight or less of the total monomer component in terms of adhesive properties and the like.

The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization may be performed by any method such as solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. In terms of preventing contamination of the clean adherend, etc., the content of the low-molecular-weight substance is preferably small. In this respect, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3 million.

Moreover, in the said adhesive agent, in order to raise the number average molecular weight of an acrylic polymer etc. which are a base polymer, an external crosslinking agent can also be used suitably. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, and a melamine-based crosslinking agent to perform the reaction. In the case of using an external cross-linking agent, the amount to be used is appropriately determined according to the balance with the base polymer to be cross-linked, and further according to the use application as an adhesive. Usually, it is preferably 5 parts by weight or less based on 100 parts by weight of the base polymer. The lower limit value is preferably 0.1 part by weight or more. Furthermore, in addition to the above-mentioned components, various additives such as a thickener and an anti-aging agent can be used in the adhesive as needed.

Examples of the ultraviolet curable monomer component to be formulated include urethane oligomers, urethane (meth) acrylates, trimethylolpropane tri (meth) acrylate, Tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (methyl) Acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the ultraviolet-curable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The molecular weight is A range of about 100 to 30,000 is more appropriate. The blending amount of the ultraviolet-curable monomer component or oligomer component can be appropriately determined according to the type of the adhesive layer, so as to reduce the adhesive force of the adhesive layer. Generally, it is 5 to 500 parts by weight, and preferably about 70 to 150 parts by weight, based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the adhesive.

In addition, as the UV-curable adhesive, in addition to the additive-type UV-curable adhesive described above, a polymer used in a polymer side chain or a main chain or having a carbon-carbon double bond at the end of the main chain may be used as a basis. Intrinsic UV-curable adhesive for polymers. The internal UV-curing adhesive does not need to contain, or does not contain a large amount of oligomer components as low molecular weight components. Therefore, the oligomer components and the like move in the adhesive over time and can form a stable layer structure adhesive. Layer, so it is better.

The above-mentioned base polymer having a carbon-carbon double bond may be a polymer having a carbon-carbon double bond and having adhesiveness without particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. When a carbon-carbon double bond is introduced into a polymer side chain, molecular design is easier. For example, the following method may be mentioned: after copolymerizing a monomer having a functional group in an acrylic polymer in advance, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is maintained to maintain the carbon-carbon double bond A method of performing condensation or addition reaction in a state of ultraviolet curability.

Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridinyl group, a hydroxyl group and an isocyanate group, and the like. Among the combinations of these functional groups, a combination of a hydroxyl group and an isocyanate group is more suitable in terms of ease of reaction tracking. In addition, as long as the combination of these functional groups is used to generate the above-mentioned acrylic polymer having a carbon-carbon double bond, the functional group may be located on either side of the acrylic polymer and the above compound. However, in the above-mentioned preferred combination, the case where the acrylic polymer has a hydroxyl group and the compound has an isocyanate group is more suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacrylfluorenyl isocyanate, 2-methacryloxyethyl isocyanate, and m-isopropenyl-α, α-dimethyl. Benzyl isocyanate and the like. In addition, as the acrylic polymer, a copolymer containing a hydroxyl group as exemplified above, or an ether-based compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether can be used. Become.

The above-mentioned intrinsic UV-curable adhesive can be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, but the UV-curable monomer component or Oligomer composition. The ultraviolet-curable oligomer component and the like are usually within a range of 30 parts by weight, and preferably within a range of 0 to 10 parts by weight based on 100 parts by weight of the base polymer.

The said ultraviolet curable adhesive contains a photoinitiator when it hardens | cures by ultraviolet rays etc. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) one, α-hydroxy-α, α'-dimethylacetophenone Α-ketal compounds such as 1,2-methyl-2-hydroxyphenylacetone, 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone Ketones, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinylpropane-1-one and other acetophenone-based compounds ; Benzoin ether compounds such as benzoin ether, benzoin isopropyl ether, anisole methyl ether; ketal compounds such as benzyl dimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; 1- Photoactive oxime compounds such as benzophenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzamylbenzoic acid, 3,3'-dimethyl-4 -Benzophenone compounds such as methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone Thioxanthone compounds such as tonone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; fluorenyl Phosphine oxide Esters and the like. The blending amount of the photopolymerization initiator is relative to the base polymer such as the acrylic polymer constituting the adhesive. 100 parts by weight is, for example, about 0.05 to 20 parts by weight.

Examples of the ultraviolet curing adhesive include, for example, an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group as disclosed in Japanese Patent Laid-Open No. Sho 60-196956. Rubber-based adhesives such as photopolymerizable compounds and photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt-based compounds, or acrylic adhesives.

Examples of a method for forming the portion 2a in the adhesive layer 2 include a method of forming a UV-curable adhesive layer 2 on the substrate 1 and then partially irradiating the portion 2a with ultraviolet rays to harden the portion 2a. The local ultraviolet irradiation can be performed through a photomask formed with a pattern corresponding to a portion 3b other than the semiconductor wafer attaching portion 3a. Moreover, the method of hardening by irradiating an ultraviolet-ray in a spot shape, etc. are mentioned. The formation of the ultraviolet-curable adhesive layer 2 can also be performed by transferring the adhesive layer provided on the release film to the substrate 1. The local ultraviolet curing may be performed on the ultraviolet curing adhesive layer 2 provided on the release film.

In the adhesive layer 2 of the cut crystal adhesive film 10, a part of the adhesive layer 2 may also be irradiated with ultraviolet rays in the manner (adhesive force of the above part 2a) <(adhesive force of the other part 2b). That is, it is possible to use a base material that shields all or a part of at least one side of the base material 1 except the portion corresponding to the semiconductor wafer attaching portion 3a, and then forms the ultraviolet-curable adhesive layer 2 thereon. The ultraviolet light irradiates and hardens the portion corresponding to the semiconductor wafer sticking portion 3a to form the above-mentioned portion 2a that reduces the adhesive force. As a light-shielding material, printing, vapor deposition, etc. can be used to produce a person who can become a mask on a support film. Thereby, the dicing die-bonding film 10 of this invention can be manufactured efficiently.

The thickness of the adhesive layer 2 is not particularly limited, and it is preferably about 1 to 50 μm, more preferably 2 to 30 μm in terms of preventing chipping of the chip cut surface, or both of the properties of the fixed and adhesive layer. It is preferably 5 to 25 μm.

(Sticky film)

The storage elastic modulus A of the viscous crystal films 3 and 3 'at 0 ° C is 1 GPa or more. The storage elastic modulus A at 0 ° C is preferably 1.5 GPa or more, and more preferably 2 GPa or more. By setting the storage elastic modulus A to the above range, the crystallinity of the viscous crystal film or the degree of aggregation of the molecular chain can be improved, and the fracture property at the time of expansion at low temperature can be improved. The upper limit of the storage elastic modulus A at 0 ° C is not particularly limited, but it is preferably 30 GPa or less, and more preferably 20 GPa or less in terms of the wafer lamination property of the adhesive film.

The loss elastic modulus B of the viscous crystal films 3 and 3 'at 0 ° C is 500 MPa or less. The loss elastic modulus B at 0 ° C is preferably 300 MPa or less, and more preferably 200 MPa or less. By setting the loss elastic modulus B to the above range, it is possible to suppress an increase in the viscosity of the viscous crystal film and improve the fracture property at the time of expansion at a low temperature. The lower limit of the storage elastic modulus A at 0 ° C is not particularly limited, but it is preferably 10 MPa or more, and more preferably 20 MPa or more, in terms of the wafer lamination property of the adhesive film.

The loss tangent C (= B / A) of the viscous crystal films 3 and 3 'at 0 ° C is 0.1 or less. The loss tangent C at 0 ° C is preferably 0.08 or less, and more preferably 0.05 or less. By setting the loss tangent C to the above range, the viscosity of the viscous crystal film can be suppressed, the elasticity can be improved, and the fracture property at the time of expansion at low temperature can be improved. The lower limit of the loss tangent C at 0 ° C is not particularly limited, but is preferably 0.005 or more, and more preferably 0.01 or more, from the viewpoint of wafer lamination of the die-bond film.

The glass transition temperature D of the viscous crystal films 3, 3 'exceeds 0 ° C. The glass transition temperature D is preferably 20 ° C or higher, and more preferably 30 ° C or higher. By setting the glass transition temperature D to the above range, it is possible to increase the crystallinity of the viscous crystal film or the degree of aggregation of molecular chains, and to improve the breakability at the time of expansion at a low temperature. The upper limit of the glass transition temperature D is not particularly limited, but it is preferably 70 ° C. or lower, and more preferably 60 ° C. or lower in terms of the wafer lamination property of the adhesive film.

The ratio E (= D / C) of the absolute value of the glass transition temperature D to the absolute value of the loss tangent C of the viscous crystal films 3 and 3 'is 600 or more. The ratio E is preferably 800 or more, and more preferably 1,000 or more. By setting the above-mentioned ratio E to the above-mentioned range, the crystallinity of the viscous crystal film or the degree of aggregation of molecular chains can be improved, and the fracture property at the time of expansion at low temperature can be improved. Above ratio E The limit is not particularly limited, but in terms of wafer lamination of the die-bond film, it is preferably 6,000 or less, and more preferably 5,000 or less.

The elongation at break at 0 ° C of the viscous crystal films 3, 3 'before thermal curing is preferably 100% or less, and more preferably 80% or less. Thereby, it is possible to prevent excessive elongation when expanding the viscous crystal film, and it is possible to better break. The lower limit of the elongation at break is not particularly limited, but from the viewpoint of preventing excessive elongation, it may be 0%, that is, no elongation at all.

The layer structure of the adhesive film is not particularly limited, and examples thereof include a single layer including only an adhesive layer like the adhesive films 3 and 3 '(see Figs. 1 and 2), or a single layer of adhesive layered. A multilayer structure in which an adhesive layer is formed on one or both sides of the core material. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), and a glass fiber. Or resin substrate, silicon substrate or glass substrate reinforced with plastic non-woven fibers. In the case where the viscous crystal film has a multilayer structure, each characteristic may be within a specific numerical range based on the entire viscous film of the multilayer structure.

As an adhesive composition which comprises the said sticky-crystal film 3 and 3 ', the composition which uses a thermoplastic resin and a thermosetting resin together can be mentioned suitably.

Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, or a thermosetting polyimide resin. . These resins can be used individually or in combination of 2 or more types. Particularly preferred is an epoxy resin that contains less ionic impurities that corrode semiconductor elements. Moreover, as a hardener of an epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, Bifunctional epoxy resins such as bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, and tetrahydroxyphenylethane type, etc. Epoxy resin, or hydantoin type, isocyanurate triglycidyl type or glycidyl Oleylamine and other epoxy resins. These can be used individually or in combination of 2 or more types. Among these epoxy resins, a novolac-type epoxy resin, a biphenyl-type epoxy resin, a trishydroxyphenylmethane-type resin, or a tetrahydroxyphenylethane-type epoxy resin is particularly preferable. The reason is that these epoxy resins are rich in reactivity with a phenol resin as a hardener, and are excellent in heat resistance and the like.

Furthermore, the phenol resin functions as a hardener of the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolac resin, a third butyl novolac resin, and a nonylphenol novolac. Novolac-type phenol resins such as varnish resins; cresol-type phenol resins, polyoxystyrenes such as polyparaoxystyrene, etc. These can be used individually or in combination of 2 or more types. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

The thermosetting resin is preferably a thermosetting resin that is solid at 23 ° C. This makes it possible to suppress the softness of the viscous crystal film at a low temperature and improve the breakability. As the thermosetting resin that is solid at 23 ° C, commercially available products can be preferably used. For example, as the epoxy resin, AER-8039 (manufactured by Asahi Kasei Epoxy, melting point 78 ° C), BREN-105 ( Made by Nippon Kayaku, melting point 64 ° C), BREN-S (made by Nippon Kayaku, melting point 83 ° C), CER-3000L (made by Nippon Kayaku, melting point 90 ° C), EHPE-3150 (manufactured by Daicel Chemical, melting point 80 ° C) ), EPPN-501HY (manufactured by Nippon Kayaku, melting point 60 ° C), ESN-165M (manufactured by Nippon Steel Chemical, melting point 76 ° C), ESN-175L (manufactured by Nippon Steel Chemical, melting point 90 ° C), ESN-175S ( Made by Nippon Steel Chemical, melting point 67 ° C), ESN-355 (made by Nippon Steel Chemical, melting point 55 ° C), ESN-375 (made by Nippon Steel Chemical, melting point 75 ° C), ESPD-295 (made by Sumitomo Chemical, melting point) 69 ℃), EXA-7335 (made by Dainippon Ink, melting point 99 ℃), EXA-7337 (made by Dainippon Ink, melting point 70 ° C), HP-7200H (made by Dainippon Ink, melting point 82 ° C), TEPIC-SS ( Manufactured by Nissan Chemical, melting point 108 ° C), KI-3000 (manufactured by Toto Kasei, melting point 64 ° C), YDC-1312 (manufactured by Toto Kasei, melting point 141 ° C), YDC-1500 (manufactured by Toto Kasei, melting point 1) 01 ℃), YL-6121HN (made by JER, melting point 130 ° C), YSLV-120TE (manufactured by Toto Kasei, melting point 113 ° C), YSLV-80XY (manufactured by Toto Kasei, melting point 80 ° C), YX-4000H (manufactured by JER, melting point 105 ° C), YX-4000K (manufactured by JER, melting point) 107 ° C), ZX-650 (manufactured by Toto Kasei, melting point 85 ° C), Epikote1001 (manufactured by JER, melting point 64 ° C), Epikote1002 (manufactured by JER, melting point 78 ° C), Epikote1003 (manufactured by JER, melting point 89 ° C), Epikote1004 (JER Manufactured, melting point 97 ° C), Epikote 1006FS (manufactured by JER, melting point 112 ° C).

Examples of the phenol resin include DL-65 (manufactured by Meiwa Chemical Industries, melting point 65 ° C), DL-92 (manufactured by Meiwa Chemical Industries, melting point 92 ° C), DPP-L (manufactured by Japan Petroleum, melting point 100 ° C), and GS- 180 (manufactured by Qunei Chemicals, melting point 83 ° C), GS-200 (manufactured by Qunei Chemicals, melting point 100 ° C), H-1 (manufactured by Meiwa Chemicals, melting point 79 ° C), H-4 (manufactured by Meiwa Chemicals, melting point 71 ° C) ), HE-100C-15 (manufactured by Sumitomo Chemical, melting point 73 ° C), HE-510-05 (manufactured by Sumitomo Chemical, melting point 75 ° C), HF-1 (manufactured by Meiwa Chemical Co., melting point 84 ° C), HF-3 (Mingwa Chemical Chemical manufacturing, melting point 96 ° C), MEH-7500 (Mingwa Chemical Manufacturing, melting point 111 ° C), MEH-7500-3S (Mingwa Chemical Manufacturing, melting point 83 ° C), MEH-7800H (Mingwa Chemical Manufacturing, melting point 86.5 ° C), MEH -7800-3L (manufactured by Meiwa Chemicals, melting point 72 ° C), MEH-7851 (manufactured by Meiwa Chemicals, melting point 78 ° C), MEH-7851-3H (manufactured by Meiwa Chemicals, melting point 105 ° C), MEH-7851-4H (Mingwa Chemicals Manufacturing, melting point 130 ° C), MEH-7851SS (manufactured by Meiwa Chemical Industry, melting point 66.5 ° C), MEH-7851S (manufactured by Meiwa Chemical Industry, melting point 73 ° C), P-1000 (manufactured by Arakawa Chemical, melting point 63 ° C), P-180 ( Arakawa Chemical Manufacturing, melting point 83 ° C), P-200 (manufactured by Arakawa Chemical, melting point 100 ° C), VR-8210 (manufactured by Mitsui Chemicals, melting point 60 ° C), XLC-3L (manufactured by Mitsui Chemicals, melting point 70 ° C), XLC-4L ( Manufactured by Mitsui Chemicals, melting point: 62 ° C), XLC-LL (Manufactured by Mitsui Chemicals, melting point: 75 ° C), and the like.

Regarding the blending ratio of the epoxy resin and the phenol resin, for example, it is preferably blended such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, the reason is that if the blending ratio of the two deviates from the above range, a sufficient curing reaction cannot be performed, and the epoxy resin The characteristics of the hardened material tend to deteriorate.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, or 6,6-nylon polyamine resin, phenoxy resin, acrylic resin, PET, or saturated polyester resin such as PBT , Polyimide, imine resin, or fluororesin. These thermoplastic resins can be used individually or in combination of 2 or more types. Among these thermoplastic resins, acrylic resins having less ionic impurities, high heat resistance, and ensuring the reliability of semiconductor devices are particularly preferred.

The acrylic resin is not particularly limited, and examples thereof include one or two or more of acrylic or methacrylic acid esters having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. A polymer (acrylic copolymer), etc. as a component. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, third butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octyl, or dodecyl.

Among the above-mentioned acrylic resins, an acrylic copolymer is particularly preferred for reasons of improving cohesive force. Examples of the acrylic copolymer include a copolymer of ethyl acrylate and methyl methacrylate, a copolymer of acrylic acid and acrylonitrile, and a copolymer of butyl acrylate and acrylonitrile.

The glass transition temperature (Tg) of the acrylic resin is preferably -30 ° C or higher and 30 ° C or lower, and more preferably -20 ° C or higher and 15 ° C or lower. By setting the glass transition temperature of the acrylic resin to -30 ° C or higher, the die-bond film is hardened and fracture properties are improved. By setting the glass transition temperature to 30 ° C or lower, wafer lamination properties at low temperatures are improved. Examples of the acrylic resin having a glass transition temperature of -30 ° C to 30 ° C include SG-708-6 (glass transition temperature: 4 ° C) and SG-790 (glass transition temperature) manufactured by Nagase Chemtex Co., Ltd. Shift temperature: -25 ° C), WS-023 (glass transition temperature: -5 ° C), SG-70L (glass transition temperature: -13 ° C), SG-80H (glass transition temperature: 7.5 ° C), SG-P3 ( Glass transition temperature: 12 ° C).

The other monomers forming the polymer are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acids, anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (formaldehyde) Methyl) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxy (meth) acrylate Hydroxyl-containing monomers such as lauryl ester or (4-hydroxymethylcyclohexyl) -methyl acrylate, styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methyl Sulfonic acid group-containing monomers such as propanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, or (meth) acryloxynaphthalenesulfonic acid, etc., or Phosphate group-containing monomers such as 2-hydroxyethylpropenyl phosphate.

The blending ratio of the thermosetting resin is not particularly limited as long as the adhesive films 3 and 3 'exhibit a function as a thermosetting type when heated under specific conditions, and it is preferably within a range of 5 to 60% by weight. , More preferably within the range of 10 to 50% by weight.

The sticky crystal films 3 and 3 'contain an epoxy resin, a phenol resin, and an acrylic resin. The total weight of the epoxy resin and the phenol resin is X, and the weight of the acrylic resin is Y. In this case, X / (X + Y) is preferably 0.3 or more and less than 0.9, more preferably 0.35 or more and less than 0.85, and still more preferably 0.4 or more and less than 0.8. As the content of the epoxy resin and the phenol resin increases, it becomes easier to break, and on the other hand, the adhesion to the semiconductor wafer 4 decreases. In addition, as the content of the acrylic resin increases, the sticky crystal films 3 and 3 ′ are less likely to crack during bonding or processing, and workability is improved. On the other hand, it becomes difficult to break. Therefore, by setting X / (X + Y) to 0.3 or more, it becomes easier to obtain the semiconductor element 5 from the semiconductor wafer 4 using Stealth Dicing. The die-bond films 3 and 3 ′ and the semiconductor wafer 4 are simultaneously fractured. Moreover, when X / (X + Y) is less than 0.9, workability | operativity can be made favorable.

In the case where the viscous crystal films 3 and 3 'of the present invention are crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the end of the molecular chain of the polymer and the like can be added in advance as a crosslink during production Agent. Thereby, the adhesion characteristics at high temperatures can be improved, and the heat resistance can be improved.

As the crosslinking agent, a conventionally known crosslinking agent can be used. In particular, polyisocyanate compounds such as toluene diisocyanate, diphenylmethane diisocyanate, terephthalic acid diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of a polyol and a diisocyanate are more preferred. The addition amount of the cross-linking agent is usually preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. If the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is reduced, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, together with such a polyisocyanate compound, other polyfunctional compounds, such as an epoxy resin, may be contained together as needed.

In addition, fillers can be appropriately blended in the viscous crystal films 3 and 3 'according to their applications. The blending of fillers can impart electrical conductivity, improve thermal conductivity, and adjust elastic modulus. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferred from the viewpoints of characteristics such as improvement of handling properties, improvement of thermal conductivity, adjustment of melt viscosity, and imparting of thixotropy. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and boric acid. Aluminum whiskers, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide, etc. These can be used individually or in combination of 2 or more types. From the viewpoint of improving thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide are preferred. From the viewpoint of a good balance of the above characteristics, crystalline silicon dioxide or amorphous silicon dioxide is preferred. In addition, a conductive substance (conductive filler) may be used as the inorganic filler for the purpose of imparting conductivity, improving thermal conductivity, and the like. Examples of the conductive filler include silver, aluminum, Gold, copper, nickel, conductive alloys, etc. are made into spherical, needle-like, scaly metal powder, metal oxides such as alumina, amorphous carbon black, graphite, etc.

The average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. The reason is that by setting the average particle diameter of the filler to 0.005 μm or more, the wettability and adhesion to the adherend can be made good. Moreover, by setting it as 10 micrometers or less, the effect of the filler added in order to provide the said each characteristic can be made sufficient, and heat resistance can be ensured. The average particle diameter of the filler is, for example, a value obtained by using a photometric particle size distribution meter (manufactured by HORIBA, device name: LA-910).

The content when the inorganic crystal filler is contained as the viscous crystal film is preferably 10% by weight or more and 90% by weight or less, more preferably 20% by weight or more, based on the total amount of the adhesive composition for forming the viscous film. 70% by weight or less, more preferably 30% by weight or more and 60% by weight or less. By making it below the said upper limit, it can prevent that a tensile-storage elasticity modulus becomes high, and the wettability and adhesiveness with respect to the wetting of a to-be-adhered body can be made favorable. In addition, by setting the above-mentioned lower limit or more, the viscous crystal film can be preferably fractured due to extension stress.

In addition, in the viscous crystal films 3 and 3 ', in addition to the fillers described above, other additives may be appropriately blended as necessary. Examples of the other additives include a flame retardant, a silane coupling agent, and an ion trapping agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxy Propylmethyldiethoxysilane and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used individually or in combination of 2 or more types.

As a constituent material of the viscous film, a thermosetting catalyst can also be used. When the content of the adhesive film includes an acrylic resin, an epoxy resin, and a phenol resin, the content is preferably 0.01 to 5 parts by weight, and more preferably 0.1 to 3 parts by weight relative to 100 parts by weight of the acrylic resin component. Servings. By setting the content to be above the lower limit described above, the epoxy groups that have not reacted during the sticking can be polymerized with each other in the subsequent steps, thereby reducing or disappearing the unreacted epoxy groups. As a result, it is possible to manufacture a semiconductor device in which a semiconductor element is fixed to an adherend without peeling. On the other hand, by setting the blending ratio to be equal to or less than the above-mentioned upper limit, it is possible to prevent occurrence of hardening resistance.

The thermosetting catalyst is not particularly limited, and examples thereof include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, triphenylborane-based compounds, and trihaloborane-based compounds. These can be used individually or in combination of 2 or more types.

Examples of the imidazole-based compound include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11Z), 2-heptadecylimidazole (trade name: C17Z), 1 , 2-dimethylimidazole (trade name: 1.2DMZ), 2-ethyl-4-methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4 -Methylimidazole (trade name: 2P4MZ), 1-benzyl-2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ), 1-cyanoethyl 2-methylimidazole (trade name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl-2-phenyl Imidazolium trimellitate (trade name: 2PZCNS-PW), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-trisazine (trade name : 2MZ-A), 2,4-diamino-6- [2'-undecylimidazolyl- (1 ')]-ethyl-s-triazine (trade name: C11Z-A), 2, 4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')]-ethyl-triazine (trade name: 2E4MZ-A), 2,4-diamine 6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanuric acid adduct (trade name: 2MA-OK), 2-phenyl-4,5- Dihydroxymethylimidazole Product name: 2PHZ-PW), 2-phenyl-4-methyl-5-hydroxymethylimidazole (trade name: 2P4MHZ-PW), etc. (all manufactured by Shikoku Chemical Co., Ltd.).

The triphenylphosphine-based compound is not particularly limited, and examples thereof include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, and diphenyl. Triorganophosphines such as tolylphosphine, tetraphenylphosphonium bromide (trade name: TPP-PB), methyltriphenyl Thallium (trade name: TPP-MB), methyltriphenylsulfonium chloride (trade name: TPP-MC), methoxymethyltriphenylsulfonium (trade name: TPP-MOC), benzyltriphenyl Samarium chloride (trade name: TPP-ZC), etc. (both manufactured by Beixing Chemical Co., Ltd.). The triphenylphosphine-based compound preferably exhibits substantially insolubility in epoxy resins. If it is insoluble in an epoxy resin, it can suppress that thermosetting advances excessively. Examples of the thermosetting catalyst having a triphenylphosphine structure and exhibiting substantially insolubility to epoxy resins include methyltriphenylphosphonium (trade name: TPP-MB). Furthermore, the above-mentioned "non-solubility" means that a thermosetting catalyst containing a triphenylphosphine-based compound is insoluble to a solvent containing an epoxy resin, and more specifically, means that it is not soluble in a temperature range of 10 to 40 ° C. Will dissolve more than 10% by weight.

The triphenylborane-based compound is not particularly limited, and examples thereof include tris (p-methylphenyl) phosphine. The triphenylborane-based compound further includes a compound having a triphenylphosphine structure. The compound having a triphenylphosphine structure and a triphenylborane structure is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K) and tetraphenylphosphonium tetra P-Tolylborate (trade name: TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S ), Etc. (both manufactured by Beixing Chemical Co., Ltd.).

The amine-based compound is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Co., Ltd.) and dicyandiamide (manufactured by Nacalai Tesque Co., Ltd.).

The trihaloborane-based compound is not particularly limited, and examples thereof include trichloroborane.

The thickness of the viscous film 3, 3 '(the total thickness in the case of a laminated body) is not particularly limited, and can be selected from a range of 1 to 200 μm, for example, preferably 5 to 100 μm, and more preferably 10 to 80 μm.

The die-bonding films 3 and 3 ′ of the above-mentioned die-cutting die-bonding films 10 and 12 are preferably protected by an isolation film (not shown). The isolation film has a protective material for protecting the sticky crystal film 3, 3 'before being used in practice Functions. In addition, the release film can also be used as a supporting substrate when transferring the adhesive film 3, 3 ′ to the adhesive layer 2. The isolation film is peeled off when the workpiece is adhered to the die-bonding films 3, 3 'of the crystalline die-bonding film. As the release film, polyethylene terephthalate (PET), polyethylene, polypropylene, or a surface-coated plastic using a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester-based release agent can also be used. Film or paper.

<Manufacturing method of cut crystal and sticky crystal film>

The dicing die-bonding films 10 and 12 of this embodiment are produced, for example, as follows.

First, the substrate 1 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and a dry lamination method. Wait.

Next, after the adhesive composition solution is applied on the substrate 1 to form a coating film, the coating film is dried under specific conditions (heat-crosslinking as necessary) to form an adhesive layer 2. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are performed, for example, in a range of a drying temperature of 80 to 150 ° C. and a drying time of 0.5 to 5 minutes. Alternatively, after the adhesive composition is applied to the release film to form a coating film, the coating film is dried under the above-mentioned drying conditions to form the adhesive layer 2. Then, the adhesive layer 2 and the separator are adhered to the substrate 1 together. Thereby, the dicing film 11 is produced. At this time, the bonding surface of the cut crystal film and the sticky crystal film may be irradiated with ultraviolet rays in advance.

The die-bond films 3 and 3 'are produced as follows, for example.

First, an adhesive composition solution that is a material for forming the viscous crystal films 3 and 3 'is prepared. The above-mentioned adhesive composition solution, the above-mentioned adhesive composition, filler, various other additives, and the like are blended into the adhesive composition solution as described above.

Then, after the adhesive composition solution is applied to the substrate release film at a specific thickness to form a coating film, the coating film is dried under specific conditions to form an adhesive layer. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Wait. The drying conditions are performed, for example, in a range of a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes. In addition, after the adhesive composition solution is applied on the release film to form a coating film, the coating film is dried under the above-mentioned drying conditions to form an adhesive layer. Then, the adhesive layer and the release film are bonded together on the substrate release film.

Then, the self-cut crystal film 11 and the adhesive layer are separated from the release film, and the adhesive layer and the adhesive layer are bonded together in such a manner that the adhesive layer and the adhesive layer become adhesive surfaces. The bonding can be performed, for example, by pressure bonding. At this time, the lamination temperature is not particularly limited, but is preferably 30 to 70 ° C, more preferably 40 to 60 ° C. The linear pressure is not particularly limited, but is preferably 0.1 to 20 kgf / cm, and more preferably 1 to 10 kgf / cm. Then, the substrate release film on the adhesive layer is peeled off to obtain the cut crystal and sticky crystal film of this embodiment.

(Manufacturing method of semiconductor device)

Next, a method for manufacturing a semiconductor device using the dicing die-bonding film 12 will be described. 3 to 6 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to this embodiment. First, laser light is irradiated on the planned division line 4L of the semiconductor wafer 4 to form a modified region on the planned division line 4L. This method is to align the light-condensing points on the inside of a semiconductor wafer, irradiate laser light along a predetermined grid-like division line, and form a modified region inside the semiconductor wafer by ablation based on multiphoton absorption. The laser light irradiation conditions may be appropriately adjusted within the following conditions.

<Laser light irradiation conditions>

(A) Laser light

(B) Condensing lens

Transmittance below 100% for laser light wavelength

(C) The moving speed of the mounting table on which the semiconductor substrate is placed is 280 mm / sec or less

Further, a method of forming a modified region on the predetermined division line 4L by irradiating laser light is described in detail in Japanese Patent No. 3408805 or Japanese Patent Laid-Open No. 2003-338567, so detailed description is omitted here. .

Then, as shown in FIG. 4, the semiconductor wafer 4 after the formation of the modified region is pressure-bonded on the die-bond film 3 ′, and then it is held and fixed (mounting step). This step is performed while pressing with a pressing device such as a crimping roller. The attaching temperature at the time of installation is not particularly limited, but is preferably within a range of 40 to 80 ° C. The reason for this is that it is possible to effectively prevent warping of the semiconductor wafer 4 and to reduce the influence of the expansion and contraction of the cut-to-die bond film.

Then, by applying a tensile stress to the die-bonding film 12, the semiconductor wafer 4 and the die-bonding film 3 ′ are broken along a predetermined division line 4L to form a semiconductor wafer 5 (wafer formation step). In this step, for example, a commercially available wafer expansion device can be used. Specifically, as shown in FIG. 5 (a), the dicing ring 31 is attached to the peripheral portion of the adhesive layer 2 of the dicing die-bonding film 12 on which the semiconductor wafer 4 is bonded, and then fixed to the wafer expansion device 32. . Then, as shown in FIG. 5 (b), the push-up portion 33 is raised, and tension is applied to the cut-to-crystal die attach film 12.

The wafer formation step is preferably performed at a temperature of -30 ° C to 20 ° C, preferably at a temperature of -25 to 15 ° C, and more preferably at a temperature of -15 to 5 ° C. By performing the wafer formation step under the above-mentioned temperature conditions, the crystallinity of the sticky film 3 'can be improved, and good fracture properties can be obtained.

In addition, in the wafer forming step, the expansion speed (the speed at which the push-up portion is raised) is preferably 100 to 400 mm / second, more preferably 100 to 350 mm / second, and even more preferably 100 to 300 mm / second. By setting the expansion speed to 100 mm / sec or more, the semiconductor wafer 4 and the die-bond film 3 ′ can be fractured approximately simultaneously and easily. In addition, by setting the expansion speed to 400 mm / sec or less, the cut crystal film 11 can be prevented from being broken.

In addition, in the wafer forming step, the expansion amount is preferably 6 to 12%. The above-mentioned expansion amount can be appropriately adjusted according to the size of the formed wafer within the above-mentioned numerical range. In addition, in this specification, the expansion amount means the value (%) of the surface area which is increased by expansion when the surface area of the crystalline film before expansion is set to 100%. By setting the expansion amount to 6% or more, the semiconductor wafer 4 and the die-bond film 3 are easily broken. In addition, by setting the expansion amount to 12% or less, the cut crystal film 11 can be prevented from being broken.

In this way, by applying tensile stress to the die-bonding die film 12, cracks can be generated in the thickness direction of the semiconductor wafer 4 from the modified region of the semiconductor wafer 4 as a starting point, and the semiconductor wafer 4 can be adhered to the crack. The sticky crystal film 3 'is broken, and a semiconductor wafer 5 with the sticky crystal film 3' can be obtained.

Then, the semiconductor wafer 5 is picked up (pickup step) in order to peel off the semiconductor wafer 5 which is then fixed to the die-bonding film 12. There is no particular limitation on the method of picking up, and various conventionally known methods can be adopted. For example, a method of lifting up each semiconductor wafer 5 from a side of the slicing die-bonding film 12 with a needle, and picking up the lifted semiconductor wafer 5 with a pick-up device, and the like can be cited.

Here, regarding picking up, since the adhesive layer 2 is an ultraviolet curing type, it is performed after the adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 2 to the die-bond film 3 'is reduced, and the peeling of the semiconductor wafer 5 becomes easy. As a result, the semiconductor wafer 5 can be picked up without damage. Conditions such as irradiation intensity and irradiation time during ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. In addition, in the case of using a die-bonded film formed by bonding a die-bond film to a UV-cured die-bond film, the ultraviolet light here is not required. Shoot.

Next, as shown in FIG. 6, the picked-up semiconductor wafer 5 is adhered to the adherend 6 via the die-bond film 3 ′ (temporary fixing step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor wafer. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

As the substrate, a conventionally known substrate can be used. In addition, as the lead frame, a metal lead frame such as a Cu lead frame, a 42 alloy lead frame, or an organic substrate including glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and also includes a circuit board that can be used for further fixing a semiconductor element and electrically connecting the semiconductor element.

The shear adhesive force at 25 ° C. at the time of temporary fixing of the viscous crystal film 3 ′ is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa for the adherend 6. If the adhesive force of the die-bonding film 3 is at least 0.2 MPa or more, in the wire bonding step, due to the ultrasonic vibration or heating in this step, the die-bonding film 3 and the semiconductor wafer 5 or the adherend 6 are bonded. The occurrence of shear deformation in the subsequent surface is rare. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing a reduction in the success rate of wire bonding. In addition, the shear adhesive force at 175 ° C. at the time of temporary fixing of the viscous crystal film 3 ′ is preferably 0.01 MPa or more, and more preferably 0.01 to 5 MPa for the adherend 6.

Next, wire bonding (wire bonding step) for electrically connecting the front end of the terminal portion (internal lead) of the adherend 6 with an electrode pad (not shown) on the semiconductor wafer 5 by the bonding wire 7 is performed (wire bonding step). Examples of the bonding wire 7 include a gold wire, an aluminum wire, and a copper wire. The temperature at the time of wire bonding is performed in the range of 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is performed for several seconds to several minutes. Wiring is performed by heating to a temperature within the above-mentioned temperature range and using vibrational energy caused by ultrasonic waves and crimping energy caused by applying pressure. This step can be performed without thermal curing of the die-bond film 3a. In addition, in the process of this step, the semiconductor wafer 5 and the adherend 6 are not fixed by the sticky film 3a.

Then, the semiconductor wafer 5 is sealed with a sealing resin 8 (sealing step). This step is performed to protect the semiconductor wafer 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding the sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually performed at 175 ° C for 60 to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 to 185 ° C for several minutes. Thereby, the sealing resin is hardened, and the semiconductor wafer 5 and the adherend 6 are fixed to each other via the adhesive film 3. That is, in the present invention, even if the following post-curing step is not performed, the sticky-crystal film 3 can be used for fixing in this step, which can contribute to the reduction of the number of manufacturing steps and the manufacturing period of the semiconductor device. Its shortened.

In the post-curing step, the sealing resin 8 that is not sufficiently cured in the sealing step is completely cured. That is, when it is convenient for the case where the viscous crystal film 3a is not completely thermally cured in the sealing step, the sealing resin 8 and the viscous crystal film 3a can be completely thermally cured in this step. The heating temperature in this step varies depending on the type of the sealing resin. For example, the heating temperature is in the range of 165 to 185 ° C, and the heating time is about 0.5 to 8 hours.

In the above-mentioned embodiment, the case where the semiconductor wafer 5 with the adhesive film 3 ′ is temporarily fixed to the adherend 6 and the wire bonding step is performed without completely curing the adhesive film 3 ′ is explained. However, in the present invention, the following ordinary die-bonding step can also be performed: after temporarily fixing the semiconductor wafer 5 with the die-bond film 3 'on the adherend 6, the die-bond film 3' is thermally hardened, and then, A wire bonding step is performed. In this case, it is preferable that the heat-hardened viscous crystal film 3 'has a shear adhesive force of 0.01 MPa or more at 175 ° C, and more preferably 0.01 to 5 MPa. The reason is that by setting the shear adhesive force at 175 ° C after thermal curing to 0.01 MPa or more, it is possible to prevent the die attach film 3 ′ and the semiconductor wafer 5 from being caused by ultrasonic vibration or heating during the wire bonding step. Or the adherence surface of the adherend 6 undergoes shear deformation.

Moreover, the die-cut die-bonding film of the present invention can also be preferably used to integrate a plurality of semiconductor crystals. A case where three-dimensional mounting is performed by laminating sheets. At this time, a die-bonding film and a spacer may be laminated between the semiconductor wafers, or only a die-bonding film may be laminated between the semiconductor wafers without a spacer, and may be appropriately changed according to manufacturing conditions or applications.

"Second Embodiment"

In the first embodiment, a semiconductor wafer 4 having a modified region formed in advance is pressure-bonded to a die-bond film 3 ′. In the second embodiment, a semiconductor wafer is pressure-bonded on the viscous film 3 ', and then the semiconductor wafer disposed on the viscous film 3' is irradiated with laser light to form a modified region inside. The conditions of the first embodiment can be preferably used as the crimping conditions and the laser light irradiation conditions.

"Third Embodiment"

Next, a method of manufacturing a semiconductor device using a step of forming a groove on the surface of a semiconductor wafer and then performing back surface grinding will be described below.

7 and 8 are schematic cross-sectional views for explaining another method of manufacturing the semiconductor device according to this embodiment. First, as shown in FIG. 7 (a), a groove 4S that does not reach the back surface 4R is formed on the surface 4F of the semiconductor wafer 4 by using the rotary blade 41. Moreover, when the groove 4S is formed, the semiconductor wafer 4 is supported by a support substrate (not shown). The depth of the groove 4S can be appropriately set according to the thickness of the semiconductor wafer 4 or the expansion conditions. Then, as shown in FIG. 7 (b), the semiconductor wafer 4 is supported by the protective substrate 42 so as to abut the surface 4F. Then, the back surface is ground with the grindstone 45, and the groove 4S is developed from the back surface 4R. Furthermore, a conventionally known attachment device can be used when attaching the protective substrate 42 to the semiconductor wafer, and a previously known grinding device can also be used for back grinding.

Then, as shown in FIG. 8, the semiconductor wafer 4 showing the groove 4S is crimped on the die-bonding die film 12, and then it is held and fixed (temporary fixing step). Then, the protective substrate 42 is peeled off, and tension is applied to the dicing die-bonding film 12 by the wafer expanding device 32. Thereby, the die-bond film 3 'is broken, and a semiconductor wafer 5 is formed (wafer formation step). In addition, the temperature, the expansion speed, the expansion amount, and the irradiation of the laser light in the wafer formation step form a modification on the planned division line 4L. The situation is the same in regions. The subsequent steps are the same as those in the case where a modified region is formed on the planned division line 4L by irradiating laser light, and therefore description thereof is omitted here.

[Example]

Hereinafter, preferred embodiments of the present invention will be described in detail. However, it is not intended to limit the gist of the present invention to only these materials, as long as the materials, preparation amounts, and the like described in this embodiment are not particularly limited.

[Examples 1 to 5 and Comparative Examples 1 to 3]

(Fabrication of Sticky Crystal Film)

Acrylic resin A, acrylic resin B, acrylic resin C, epoxy resin A, epoxy resin B, phenol resin A, phenol resin B, inorganic filler (silicon dioxide), and The hardening catalyst is dissolved in methyl ethyl ketone to prepare an adhesive composition solution having a concentration of 40 to 50% by weight.

This adhesive composition solution was applied to a release film having a thickness of 50 μm and a polyethylene terephthalate film which was subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. 2 In this way, a 20 μm-thick adhesive film was produced.

The abbreviations and components in Table 1 below are described in detail below.

Acrylic resin A: SG-708-6 manufactured by Nagase Chemtex (glass transition temperature: 4 ° C)

Acrylic resin B: SG-70L (glass transition temperature: -13 ° C) manufactured by Nagase Chemtex

Acrylic resin C: SG-P3 (glass transition temperature: 12 ° C) manufactured by Nagase Chemtex

Epoxy resin A: KI-3000 manufactured by Tohto Kasei Co., Ltd.

Epoxy resin B: JER YL980 manufactured by Mitsubishi Chemical Corporation

Phenol resin A: MEH-7800H manufactured by Meiwa Chemical Co., Ltd.

Phenol resin B: MEH-7851SS manufactured by Meiwa Chemical Co., Ltd.

Filler: SE-2050MC (silicon dioxide, average particle size: 0.5 μm) manufactured by ADMATECHS Co., Ltd.

Thermal hardening catalyst: TPP-K manufactured by Beixing Chemical Co., Ltd.

(Evaluation of storage elastic modulus A, loss elastic modulus B and loss tangent C, and measurement of glass transition temperature before heat curing)

Each of the viscous crystal films was overlapped at a temperature of 60 ° C. to a thickness of 400 μm, and then formed into strips having a length of 30 mm and a width of 10 mm. Next, using a dynamic viscoelasticity measuring device (RSA (II), manufactured by Rheometric Scientific), the storage elasticity at -30 to 280 ° C was measured under conditions of a distance between chucks of 22.5 mm, a frequency of 1 Hz, and a heating rate of 10 ° C / min. Modulus and loss elastic modulus. Table 2 shows the storage elastic modulus A at 0 ° C, the loss elastic modulus B, and the loss tangent C (= B / A) at 0 ° C. Table 2 shows the glass transition temperature D obtained from the peak value of tan δ at this time.

(Elongation at break)

The produced sticky-crystal film was cut | disconnected so that it might become a strip-shaped measurement piece with a length of 30 mm, a thickness of 20 micrometers, and a width of 10 m. Then, an elongation tester (Autograph, manufactured by Shimadzu Corporation) was used to perform elongation at a temperature of 0 ° C, an elongation speed of 50 mm / min, and a distance between the chucks of 10 mm. The inter-disk distance x (mm) was obtained by the following formula. The results are shown in Table 2.

Elongation at break (%) = ((x-10) / 10) × 100

(Evaluation of breakability)

As a laser processing device, ML300-Integration manufactured by Tokyo Precision Co., Ltd. was used to align the light-condensing points toward the inside of the semiconductor wafer, and irradiate from the surface side of the semiconductor wafer along a grid-like (10mm × 10mm) division line Laser light forms a modified region inside the semiconductor wafer. As the semiconductor wafer, a silicon wafer (75 μm in thickness and 12 inches in outer diameter) was used. The laser light irradiation conditions were performed as follows.

(A) Laser light

(B) Condensing lens

60% transmittance for laser light wavelength

(C) 100 mm / s moving speed of the mounting table on which the semiconductor substrate is placed

After bonding each of the viscous crystal films to a semiconductor wafer pretreated with laser light, a fracture test was performed. The fracture test was performed under the condition of an extension temperature of 0 ° C. The expansion speed was set to 400 mm / second and the expansion amount was set to 6%. As a result of the fracture test, There are 100 wafers in the central part of the bulk wafer, and the number of wafers with which the wafer and the die-bond film are well fractured along a predetermined division line is counted. All the wafers and the attached die-bond film were evaluated as "○", and even when there were only one location where the wafer and the attached die-bond film did not break, it was evaluated as "×". The results are shown in Table 2.

<In the case of forming a groove on the surface of a semiconductor wafer and then performing a back grinding process>

A grid-shaped (10mm × 10mm) notch groove is formed on a semiconductor wafer (500 μm in thickness) by dicing with a blade. The depth of the notch groove was set to 100 μm.

Then, the surface of the semiconductor wafer was protected with a protective tape, and the back grinding was performed until the thickness became 75 μm to obtain each of the divided semiconductor wafers (10 mm × 10 mm × 75 μm). After bonding them to each of the viscous crystal films, a fracture test was performed. The fracture test was performed under each condition of the extension temperature of 0 ° C, 10 ° C, and 25 ° C. The expansion speed was set to 400 mm / second and the expansion amount was set to 6%. As a result of the fracture test, for 100 wafers in the central portion of the semiconductor wafer, the number of wafers where the adhesive film was well fractured was counted. All the wafers and the attached die-bond film were evaluated as "○", and even when there were only one location where the wafer and the attached die-bond film did not break, it was evaluated as "×". The results are shown in Table 2.

The wafers and wafers of Examples 1 to 5 at 0 ° C had good fracture properties. phase In this regard, the fracture properties of the viscous crystal films of Comparative Examples 1 to 3 were inferior. In Comparative Examples 1 to 3, the loss tangent C becomes higher, and in Comparative Example 3, the loss elastic modulus B becomes higher. On the other hand, the ratio E of the glass transition temperature D to the loss tangent C becomes smaller. As for the film, compared with elasticity, the influence of viscosity is stronger, whereby the fracture of the viscous crystal film becomes insufficient.

In addition, in this embodiment, evaluation is performed using Stealth Dicing, but it is considered that the same results can be obtained when evaluation is performed using the DBG method.

Claims (7)

A heat-hardening type viscous film. Before heat curing, the storage elastic modulus A at 0 ° C is above 1 GPa, the loss elastic modulus B at 0 ° C is below 500MPa, and the loss tangent C at 0 ° C is below 0.1 The glass transition temperature D exceeds 0 ° C, and the ratio E of the absolute value of the glass transition temperature D to the absolute value of the loss tangent C is 600 or more. For example, the thermosetting viscous film of claim 1, wherein the elongation at break at 0 ° C before thermal curing is 100% or less. For example, the thermosetting type viscous film of claim 1 includes an inorganic filler, and the content of the inorganic filler is 10% by weight or more and 90% by weight or less. The thermosetting type viscous film according to claim 1, comprising a thermosetting resin which is solid at 23 ° C. A cut crystal sticky film, which is laminated on a cut crystal film formed by laminating an adhesive on a substrate, and has a thermosetting type sticky film as in any one of claims 1 to 4. A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device using a dicing die-bond film as claimed in claim 5, and includes the steps of: irradiating laser light on a predetermined division line of a grid-like division of a semiconductor wafer; A step of forming a modified region on a grid-like divided predetermined line; a step of attaching the semiconductor wafer after the formation of the modified region to the above-mentioned crystal-cut die-bond film; and under the condition of -30 ° C to 20 ° C, A step of applying a tensile stress to the die bond film to break the semiconductor wafer and the die bond film constituting the cut die bond film along the grid-like predetermined division line to form a semiconductor element; A step of picking up the sticky crystal film together; and a step of sticking the picked up semiconductor element to the adherend through the sticky film. A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device using a die-cut die-bond film as claimed in claim 5, and includes the following steps: forming a groove on the surface of the semiconductor wafer that does not reach the back surface; The step of grinding the back surface of the semiconductor wafer to reveal the groove from the back surface; the step of bonding the semiconductor wafer showing the groove from the back surface to the cut die-bonding film; at a temperature of -30 ° C to 20 ° C Next, a step of applying tensile stress to the above-mentioned die-bonded crystal film to break the die-bond film constituting the above-mentioned die-bonded film to form a semiconductor element; a step of picking up the semiconductor element together with the above-mentioned die-bond film; And a step of sticking the picked up semiconductor device to the adherend through the sticky film.