JP7041505B2 - Adhesive film and adhesive film with dicing tape - Google Patents

Description

The present invention relates to an adhesive film and an adhesive film with a dicing tape that can be used in the manufacturing process of a semiconductor device.

In the process of manufacturing a semiconductor device, a semiconductor chip with an adhesive film having a size equivalent to that of a chip for die bonding, that is, an adhesive film with a dicing tape may be used to obtain a semiconductor chip with an adhesive film. The adhesive film with a dicing tape has a size corresponding to the semiconductor wafer to be processed, and is, for example, a dicing tape composed of a base material and an adhesive layer and an adhesive film that is detachably adhered to the adhesive layer side thereof. And have.

As one of the methods for obtaining a semiconductor chip with an adhesive film using an adhesive film with a dicing tape, a method for expanding the dicing tape in the adhesive film with a dicing tape and cutting the adhesive film is known. .. In this method, first, a semiconductor wafer as a work is bonded onto an adhesive film of an adhesive film with a dicing tape. This semiconductor wafer is, for example, processed so that it can be later divided into a plurality of semiconductor chips together with the division of the adhesive film. Next, dicing of the adhesive film with dicing tape holding the semiconductor wafer in order to cut the adhesive film so that a plurality of adhesive film pieces, each of which is in close contact with the semiconductor chip, are generated from the adhesive film on the dicing tape. The tape is expanded in the wafer radial direction (expanding step for cutting). In this expanding step, the semiconductor wafer on the adhesive film is also divided at the portion corresponding to the portion where the adhesive film is cut, and the semiconductor wafer is separated into a plurality of semiconductor chips on the adhesive film with dicing tape or the dicing tape. Next, for example, after undergoing a cleaning step, each semiconductor chip is pushed up from the lower side of the dicing tape by a pin member of the pick-up mechanism together with an adhesive film having a size equivalent to the chip in close contact with the chip, and then picked up from the dicing tape. Ru. In this way, a semiconductor chip with an adhesive film can be obtained. The semiconductor chip with an adhesive film is fixed to an adherend such as a mounting substrate by die bonding via the adhesive film. For example, the techniques relating to the adhesive film with a dicing tape used as described above and the adhesive film contained therein are described in, for example, Patent Documents 1 to 3 below.

Japanese Unexamined Patent Publication No. 2007-2173 Japanese Unexamined Patent Publication No. 2010-177401 Japanese Unexamined Patent Publication No. 2012-23161

In the adhesive film for die bonding of semiconductor chips, cracks due to thermal stress are unlikely to occur in the adhesive layer formed from the adhesive layer, such as cracks are unlikely to occur even after a predetermined temperature cycle test. , May be required. Further, the thicker the adhesive film, the more likely it is that cracks due to thermal stress will occur in the adhesive layer formed from the adhesive film. The occurrence of cracks in the adhesive layer that is interposed between the mounting board and the semiconductor chip and joins them may cause damage or disconnection in the wiring on the surface of the mounting board that is in contact with the adhesive layer, which is preferable. do not have.

The present invention has been conceived under the above circumstances, and an object thereof is an adhesive film suitable for suppressing the generation of cracks due to thermal stress in the formed adhesive layer. And to provide an adhesive film with a dying tape comprising such an adhesive film.

According to the first aspect of the present invention, an adhesive film is provided. This adhesive film is obtained under the conditions of an average temperature rise rate of 1 ° C./min, a temperature modulation cycle of 300 seconds, and a temperature modulation amplitude of 5 ° C. while applying a tensile load of 0.002 N to the cured adhesive film test piece having a width of 5 mm. The amount of non-reversing displacement in the temperature-modulated TMA measurement that raises the temperature from ° C to 125 ° C is 0.65% or less. The irreversible displacement amount is preferably 0.6% or less, more preferably 0.57% or less. The adhesive film having such a structure can be used as an adhesive film for die bonding. Further, the adhesive film having such a structure can be used to obtain a semiconductor chip with an adhesive film in the process of manufacturing a semiconductor device in a form in which the dicing tape is in close contact with the pressure-sensitive adhesive layer side.

The dimensional change or displacement caused by the temperature rise in the adhesive film is a reversible component that can change essentially in conjunction with the rise and fall of the temperature and a non-reversing component that does not. And are included. The irreversible component mainly includes deformation or displacement caused by relaxation of the internal strain of the adhesive film. The relaxation of internal strain tends to progress as the temperature rises, and the change is irreversible. The total amount of dimensional change caused by temperature rise in the adhesive film is the sum of such reversible displacement amount and irreversible displacement amount, and these are obtained by thermomechanical analysis (TMA) measurement accompanied by temperature modulation, that is, temperature-modulated TMA measurement. be able to.

As described above, the present adhesive film has an average temperature rise rate of 1 ° C./min, a temperature modulation cycle of 300 seconds, and a temperature modulation amplitude of 5 ° C. while applying a tensile load of 0.002 N to the cured adhesive film test piece having a width of 5 mm. The irreversible displacement amount in the temperature-modulated TMA measurement of raising the temperature from −60 ° C. to 125 ° C. under the above conditions is 0.65% or less. The present inventors have found that such a configuration is suitable for suppressing the generation of cracks due to thermal stress in the adhesive layer formed from the adhesive film even when the adhesive film is relatively thick. .. For example, it is as shown with Examples and Comparative Examples described later. The structure of the present adhesive film, in which the irreversible displacement amount is 0.65% or less, determines the strain relaxation amount when the internal strain is alleviated by the action of heat stress in the cured adhesive film, that is, the adhesive layer. It is considered suitable for suppression. In the formed adhesive layer, the more the amount of internal strain relaxation is suppressed, the less likely it is that cracks due to the relaxation of internal strain will occur.

As described above, the adhesive film according to the first aspect of the present invention is suitable for suppressing the generation of cracks due to thermal stress in the adhesive layer formed from the adhesive film.

In this adhesive film, the total displacement amount (= reversible displacement amount + irreversible displacement amount) of the cured adhesive film test piece having a width of 5 mm in the above temperature-modulated TMA measurement is preferably 1.65% or less. It is preferably 1.6% or less, more preferably 1.55% or less, and more preferably 1.5% or less. Such a configuration is preferable in order to suppress the generation of cracks due to thermal stress in the cured adhesive film, that is, the adhesive layer.

This adhesive film is measured on a cured adhesive film test piece with a width of 5 mm under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ± 0.5 μm, and a heating rate of 10 ° C./min. The tensile storage elastic modulus at ° C. is preferably 40 MPa or more, more preferably 50 MPa or more, more preferably 60 MPa or more, more preferably 400 MPa or more, more preferably 500 MPa or more, and even more preferably 600 MPa or more. Such a configuration is preferable for suppressing the generation of cracks caused by thermal stress in the formed adhesive layer.

The thickness of the adhesive film is preferably 40 μm or more, more preferably 60 μm or more, and more preferably 80 μm or more. In such a configuration, the second semiconductor chip is bonded to the mounting substrate while embedding the first semiconductor chip, which is wire-bonded and mounted on the mounting substrate, together with all or a part of the bonding wire connected to the first semiconductor chip. It is suitable for using the adhesive film of the present invention as an adhesive film for forming an adhesive layer (thick adhesive film for embedding a semiconductor chip). Alternatively, the configuration relating to the thickness of the adhesive film is an adhesive film for forming an adhesive layer (semiconductor chip package) for joining the second semiconductor chip to the mounting substrate while embedding the first semiconductor chip mounted with flip chips in the mounting substrate. It is suitable for using the adhesive film of the present invention as a thick adhesive film for embedding).

The thickness of the adhesive film is preferably 150 μm or less, more preferably 140 μm or less, and more preferably 130 μm or less. Such a configuration is in order to realize good splitting of the adhesive film when the adhesive film is attached to the expansion step for splitting as described above in a form in which the adhesive film is in close contact with the adhesive layer side of the dicing tape. Suitable.

This adhesive film is an adhesive that bonds a second semiconductor chip to a mounting substrate while embedding the first semiconductor chip, which is wire-bonded and mounted on the mounting substrate, together with all or a part of the bonding wire connected to the first semiconductor chip. It may be configured so that layers can be formed. The present adhesive film may be configured to be capable of forming an adhesive layer for joining the second semiconductor chip to the mounting substrate while embedding the first semiconductor chip mounted with the flip chip on the mounting substrate.

According to the second aspect of the present invention, an adhesive film with a dicing tape is provided. This adhesive film with a dicing tape includes a dicing tape and the above-mentioned adhesive film according to the first aspect of the present invention. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive film is removably adhered to the adhesive layer of the dicing tape. Such an adhesive film with a dicing tape comprising the adhesive film according to the first aspect of the present invention is an adhesive film suitable for suppressing the generation of cracks due to thermal stress in the formed adhesive layer, for example, wafer size. Suitable for serving in.

It is sectional drawing of the adhesive film with a dicing tape which concerns on one Embodiment of this invention. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. A part of the steps in the method for manufacturing a semiconductor device in which the adhesive film with dicing tape shown in FIG. 1 is used is shown. An example of a semiconductor device manufactured by using the adhesive film with a dicing tape shown in FIG. 1 is shown. An example of a semiconductor device manufactured by using the adhesive film with a dicing tape shown in FIG. 1 is shown. An example of a semiconductor device manufactured by using the adhesive film with a dicing tape shown in FIG. 1 is shown.

FIG. 1 is a schematic cross-sectional view of an adhesive film X with a dicing tape according to an embodiment of the present invention. The adhesive film X with a dicing tape has a laminated structure including the adhesive film 10 and the dicing tape 20 according to the embodiment of the present invention. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The pressure-sensitive adhesive layer 22 has an pressure-sensitive adhesive surface 22a on the side of the adhesive film 10. The adhesive film 10 is removably adhered to the adhesive layer 22 of the dicing tape 20 or the adhesive surface 22a thereof. The adhesive film X with a dicing tape can be used in a blade dicing step or an expanding step as described below, for example, in the process of obtaining a semiconductor chip with an adhesive film in the manufacture of a semiconductor device. Further, the adhesive film X with a dicing tape has a disk shape having a size corresponding to a semiconductor wafer which is a work in the manufacturing process of a semiconductor device, and its diameter is, for example, in the range of 300 to 390 mm (12-inch wafer compatible type). ), Within the range of 200 to 280 mm (8-inch wafer compatible type), within the range of 450 to 530 mm (18-inch wafer compatible type), or within the range of 150 to 230 mm (6-inch wafer compatible type).

The adhesive film 10 in the adhesive film X with a dicing tape has a structure capable of functioning as an adhesive for die bonding exhibiting thermosetting. The adhesive film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may use a thermoplastic resin having a thermosetting functional group that can react with a curing agent to form a bond. It may have a composition contained as an ingredient. When the adhesive film 10 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive film 10 does not need to further contain the thermosetting resin. Such an adhesive film 10 may have a single-layer structure or may have a multi-layer structure having different compositions between adjacent layers.

When the adhesive film 10 has a composition containing a thermosetting resin and a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, and a silicone resin. And thermosetting polyimide resin. The adhesive film 10 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. The epoxy resin is preferable as the thermosetting resin in the adhesive film 10 because it tends to have a small content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be die-bonded. Further, as a curing agent for exhibiting thermosetting property in the epoxy resin, a phenol resin is preferable.

Examples of the above-mentioned epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, and phenol novolac type. Examples thereof include orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins. Phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin are highly reactive and heat resistant with phenol resin as a curing agent. It is preferable as the epoxy resin in the adhesive film 10 because of its excellent properties.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. The adhesive film 10 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin. When the phenol novolac resin or the phenol aralkyl resin is used as a curing agent for the epoxy resin as the adhesive for die bonding, the connection reliability of the adhesive tends to be improved. Therefore, the curing for the epoxy resin in the adhesive film 10 tends to be improved. Preferred as an agent.

When the adhesive film 10 contains an epoxy resin and a phenol resin as a curing agent thereof, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents, more preferably 0.5 to 2.0 equivalents, relative to 1 equivalent of the epoxy groups in the epoxy resin. Both resins are blended at a ratio of 0.8 to 1.2 equivalents. Such a configuration is preferable in order to sufficiently proceed the curing reaction of the epoxy resin and the phenol resin when the adhesive film 10 is cured.

The content ratio of the thermosetting resin in the adhesive film 10 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the adhesive film 10. %.

The thermoplastic resin in the adhesive film 10 has, for example, a binder function, and when the adhesive film 10 has a composition containing a thermosetting resin and a thermoplastic resin, the thermoplastic resin includes, for example, an acrylic resin. Natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon Examples thereof include polyamide resins such as 6,6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluororesins. The adhesive film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the adhesive film 10 because it has few ionic impurities and high heat resistance.

When the adhesive film 10 contains an acrylic resin as a thermoplastic resin, the acrylic polymer forming the acrylic resin preferably contains the most amount of monomer units derived from (meth) acrylic acid ester in terms of mass ratio. "(Meta) acrylic" shall mean "acrylic" and / or "methacrylic".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic polymer include (meth) acrylic acid alkyl ester and (meth). Acrylic acid cycloalkyl esters and (meth) acrylic acid aryl esters can be mentioned. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester and iso of (meth) acrylic acid. Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, tetradecyl ester , Hexadecyl ester, octadecyl ester, and ecosil ester. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include (meth) acrylic acid phenyl and (meth) acrylic acid benzyl. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Further, the acrylic polymer for forming an acrylic resin can be obtained by polymerizing a raw material monomer for forming the acrylic resin. Polymerization methods include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The acrylic polymer may contain one or more other monomers copolymerizable with the (meth) acrylic acid ester as a constituent monomer, for example, for the purpose of modifying its cohesive force and heat resistance. Examples of such a monomer include a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, acrylamide, and acrylonitrile. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, and (. Examples include 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methyl propane sulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloyloxynaphthalene sulfonic acid. Can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate.

From the viewpoint of achieving high cohesive force in the adhesive film 10, the acrylic polymer contained as an acrylic resin in the adhesive film 10 is, for example, a copolymer of butyl acrylate, ethyl acrylate, and acrylonitrile.

When the adhesive film 10 has a composition containing a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming this thermosetting functional group-containing acrylic resin preferably contains the most amount of monomer units derived from (meth) acrylic acid ester in terms of mass ratio. As such a (meth) acrylic acid ester, for example, the above-mentioned (meth) acrylic acid ester can be used as a constituent monomer of the acrylic polymer forming the acrylic resin contained in the adhesive film 10. On the other hand, examples of the thermosetting functional group for forming a thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxy group-containing acrylic resin can be preferably used. Further, depending on the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin, a curing agent capable of causing a reaction with the thermosetting functional group is selected. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the above-mentioned phenol resin can be used as the curing agent for the epoxy resin.

In order to achieve a certain degree of cross-linking of the adhesive film 10 before being cured for die bonding, for example, it reacts with the functional group at the end of the molecular chain of the above-mentioned resin component contained in the adhesive film 10. It is preferable to add a polyfunctional compound capable of forming a bond as a cross-linking agent to the resin composition for forming an adhesive film. Such a configuration is suitable for improving the adhesive properties of the adhesive film 10 at high temperatures and for improving the heat resistance. Examples of such a cross-linking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediocyanate, 1,5-naphthalenediocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the cross-linking agent in the resin composition for forming an adhesive film is from the viewpoint of improving the cohesive force of the adhesive film 10 to be formed with respect to 100 parts by mass of the resin having the above-mentioned functional group that can react with the cross-linking agent to form a bond. Is preferably 0.05 parts by mass or more, and preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the formed adhesive film 10. Further, as the cross-linking agent in the adhesive film 10, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The glass transition temperature of the above-mentioned acrylic resin and the above-mentioned thermosetting functional group-containing acrylic resin blended in the adhesive film 10 is preferably −40 to 10 ° C. As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The Fox formula is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the Fox formula below, Tg represents the glass transition temperature (° C.) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i. ) Is shown. Literature values can be used for the glass transition temperature of the homopolymer. For example, "New Polymer Bunko 7 Introduction to Synthetic Resins for Paints" (Kyozo Kitaoka, Polymer Publishing Association, 1995) and "Acrylic Ester Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.) have various single weights. The combined glass transition temperature is mentioned. Further, the glass transition temperature of the homopolymer of the monomer can also be obtained by the method specifically described in JP-A-2007-51271.

Fox formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

The adhesive film 10 may contain a filler. The blending of the filler in the adhesive film 10 is preferable in order to adjust the physical properties such as the coefficient of thermal expansion and the elastic modulus of the adhesive film 10. Examples of the filler include an inorganic filler and an organic filler. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. Further, the adhesive film 10 may contain one kind of filler or may contain two or more kinds of fillers.

Examples of the constituent materials of the above-mentioned inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisk. , Boron nitride, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon and graphite. When the adhesive film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more, and more preferably 30% by mass or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less, and more preferably 40% by mass or less.

Examples of the constituent materials of the above organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide, and polyesterimide. When the adhesive film 10 contains an organic filler, the content of the organic filler is preferably 2% by mass or more, more preferably 5% by mass or more, and more preferably 8% by mass or more. The content is preferably 20% by mass or less, more preferably 17% by mass or less, and more preferably 15% by mass or less.

When the adhesive film 10 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.05 to 1 μm. The configuration in which the average particle size of the filler is 0.005 μm or more is suitable for achieving high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive film 10. The configuration in which the average particle size of the filler is 10 μm or less is suitable for obtaining a sufficient filler addition effect in the adhesive film 10 and ensuring heat resistance. The average particle size of the filler can be obtained, for example, by using a luminous intensity type particle size distribution meter (trade name "LA-910", manufactured by HORIBA, Ltd.).

The adhesive film 10 may contain a thermosetting catalyst. The addition of the thermosetting catalyst to the adhesive film 10 is preferable in order to sufficiently proceed the curing reaction of the resin component in the curing of the adhesive film 10 and to increase the curing reaction rate. Examples of such a thermosetting catalyst include an imidazole-based compound, a triphenylphosphine-based compound, an amine-based compound, and a trihalogen-borane-based compound. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-phenyl-. 4-Methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole Rium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazole-(1') ')]-Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole Can be mentioned. Examples of the triphenylphosphine compound include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltrilphosphine, tetraphenylphosphonium bromide, and methyltriphenylphosphonium. , Methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound shall also include a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihalogen borane compound include trichloroborane. The adhesive film 10 may contain one type of thermosetting catalyst, or may contain two or more types of thermosetting catalysts.

The adhesive film 10 may contain one kind or two or more kinds of other components, if necessary. Examples of the other components include flame retardants, silane coupling agents, and ion trapping agents. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydroxide-containing antimony (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate having a specific structure (for example, "IXE-300" manufactured by Toagosei Co., Ltd.). IXE-100 "), magnesium silicate (for example," Kyoward 600 "manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (for example," Kyoward 700 "manufactured by Kyowa Chemical Industry Co., Ltd.). A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, a triazole-based compound is preferable from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-). 5-Methylphenyl) Benzotriazole 2- (2-Hydroxy-3,5-di-t-butylphenyl) -5-Chlorobenzotriazole 2- (2-Hydroxy-3-t-butyl-5-methylphenyl) )-5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1) , 2-Dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazole-1-yl) methyl} phenol, 2 -(2-Hydroxy-5-t-butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2-H-benzotriazole-2-yl)) Phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole-2-yl) phenyl] propionate, 2- (2H-benzotriazole-2) -Il) -6- (1-Methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazole-2-yl) -4-t -Butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5) -Methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-Chlorobenzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H) -Benzotriazole-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl]- Examples thereof include 2H-benzotriazole and methyl-3- [3- (2H-benzotriazole-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. Further, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as an ion trapping agent. Specific examples of such hydroxyl group-containing compounds include 1,2-benzenediol, alizarin, anthralphin, tannin, gallate, methyl gallate, and pyrogallol.

The thickness of the adhesive film 10 is preferably 40 μm or more, more preferably 60 μm or more, and more preferably 80 μm or more. The thickness of the adhesive film 10 is preferably 150 μm or less, more preferably 140 μm or less, and even more preferably 130 μm or less.

The adhesive film 10 was formed under the conditions of an average temperature rise rate of 1 ° C./min, a temperature modulation period of 300 seconds, and a temperature modulation amplitude of 5 ° C. while applying a tensile load of 0.002 N to the cured adhesive film test piece having a width of 5 mm. The amount of non-reversing displacement in the temperature-modulated TMA measurement that raises the temperature from ° C to 125 ° C is 0.65% or less, preferably 0.6% or less, and more preferably 0.57% or less. Further, the adhesive film 10 preferably has a total displacement amount (= reversible displacement amount + irreversible displacement amount) of 1.65% or less in the temperature-modulated TMA measurement of the cured adhesive film test piece having a width of 5 mm. It is more preferably 1.6% or less, more preferably 1.55% or less, and even more preferably 1.5% or less. The adhesive film 10 or the adhesive film test piece to be subjected to the temperature-modulated TMA measurement shall be cured by heating at 150 ° C. for 1 hour and then at 175 ° C. for 1 hour. The temperature-modulated TMA measurement can be performed using, for example, a thermomechanical analyzer (trade name “TMA Q400EM”, manufactured by TA Instruments). Further, the adjustment of the irreversible displacement amount of the adhesive film 10 is performed by adjusting the amount of the functional group of the thermosetting resin, the amount of the functional group of the thermoplastic resin, and the ratio of the thermosetting resin in the resin component. It is possible to do this by controlling the above.

The adhesive film 10 is measured with a cured adhesive film test piece having a width of 5 mm under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ± 0.5 μm, and a heating rate of 10 ° C./min. The tensile storage elastic modulus at ° C. is preferably 40 MPa or more, more preferably 50 MPa or more, more preferably 60 MPa or more, more preferably 400 MPa or more, more preferably 500 MPa or more, and even more preferably 600 MPa or more. The adhesive film 10 or the adhesive film test piece attached to this measurement shall be cured by heating at 150 ° C. for 1 hour and then at 175 ° C. for 1 hour. The tensile storage elastic modulus can be measured using, for example, a dynamic viscoelasticity measuring device (trade name “RSA-III”, manufactured by TA Instruments). Further, the tensile storage elastic modulus of the adhesive film 10 can be adjusted by controlling the blending amount of the filler in the adhesive film 10.

The adhesive film 10 exhibits a 180 ° peeling adhesive force of, for example, 0.3 to 20 N / 10 mm with respect to a SUS plane in a peeling test under the conditions of a temperature of 23 ° C., a peeling angle of 180 °, and a tensile speed of 300 mm / min. Such a configuration is suitable for ensuring the holding of the work by the adhesive film X with the dicing tape or the adhesive film 10 thereof.

The base material 21 of the dicing tape 20 in the adhesive film X with a dicing tape is an element that functions as a support in the dicing tape 20 or the adhesive film X with a dicing tape. The base material 21 is, for example, a plastic base material, and a plastic film can be preferably used as the plastic base material. Examples of the constituent materials of the plastic base material include polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylsulfide, and aramid. , Fluoro resin, cellulose resin, and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolyprolene, polybutene, and polymethylpentene. Examples include ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic acid copolymers, ethylene- (meth) acrylic acid ester copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers. Be done. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 21 may be made of one kind of material or may be made of two or more kinds of materials. The base material 21 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 22 on the base material 21 has ultraviolet curability, it is preferable that the base material 21 has ultraviolet transparency. When the base material 21 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

When the dicing tape 20 or the base material 21 is shrunk by, for example, partial heating when the adhesive film X with the dicing tape is used, the base material 21 is preferably heat-shrinkable. When the base material 21 is made of a plastic film, the base material 21 is preferably a biaxially stretched film in order to realize isotropic heat shrinkage of the dicing tape 20 or the base material 21. The dicing tape 20 to the base material 21 has a heat shrinkage rate of preferably 2 to 30%, more preferably 2 to 25%, and more preferably more preferably 2 to 30%, more preferably 2 to 25%, in a heat treatment test conducted under the conditions of a heat temperature of 100 ° C. and a heat treatment time of 60 seconds. It is 3 to 20%, more preferably 5 to 20%. The heat shrinkage rate is defined as at least one of a so-called MD direction heat shrinkage rate and a so-called TD direction heat shrinkage rate.

The surface of the base material 21 on the pressure-sensitive adhesive layer 22 side may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 22. Physical treatments include, for example, corona treatment, plasma treatment, sandmat processing, ozone exposure treatment, flame exposure treatment, high voltage impact exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.

The thickness of the base material 21 is preferably 40 μm or more, preferably 50 μm or more, and more, from the viewpoint of ensuring the strength for the base material 21 to function as a support in the dicing tape 20 or the adhesive film X with the dicing tape. It is preferably 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of achieving appropriate flexibility in the dicing tape 20 or the adhesive film X with the dicing tape, the thickness of the base material 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less. Is.

The pressure-sensitive adhesive layer 22 of the dicing tape 20 contains a pressure-sensitive adhesive. This pressure-sensitive adhesive may be a pressure-sensitive adhesive (adhesive-reducing pressure-sensitive adhesive) capable of intentionally reducing the pressure-sensitive adhesive force by an external action in the process of using the adhesive film X with a dying tape, or may be dying. In the process of using the adhesive film X with tape, it may be an adhesive (adhesive strength non-reducing type adhesive) whose adhesive strength is hardly or not reduced depending on an external action. Whether to use the adhesive strength-reducing adhesive or the adhesive strength non-reducing adhesive as the adhesive in the adhesive layer 22 is determined by using the adhesive film X with dicing tape to separate the semiconductor chips. It can be appropriately selected depending on the usage mode of the adhesive film X with the dicing tape, such as the method and conditions for individualization.

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22, the pressure-sensitive adhesive layer 22 exhibits a relatively high pressure-sensitive adhesive strength and a relatively low pressure-sensitive adhesive in the process of using the adhesive film X with a dicing tape. It is possible to use the state that shows the force properly. For example, when the adhesive film X with a dying tape is used in the expanding step described later, the high adhesive strength state of the adhesive layer 22 is used in order to suppress / prevent the adhesive film 10 from floating or peeling from the adhesive layer 22. On the other hand, after that, in the pickup step described later for picking up the semiconductor chip with the adhesive film from the dying tape 20 of the adhesive film X with the dying tape, it is easy to pick up the semiconductor chip with the adhesive film from the adhesive layer 22. Therefore, it is possible to utilize the low adhesive strength state of the pressure-sensitive adhesive layer 22.

Examples of such an adhesive force-reducing adhesive include an adhesive (radiocurable adhesive) that can be cured by irradiation in the process of using the adhesive film X with a dicing tape, and a heat-foaming adhesive. Can be mentioned. In the pressure-sensitive adhesive layer 22 of the present embodiment, one type of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 22 may be formed of a pressure-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 22 may be formed of a pressure-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a pressure-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 22 may be a pressure-reducing pressure-sensitive adhesive. Other sites (eg, the area to which the ring frame is to be attached, which is outside the central area) may be formed from the non-adhesive adhesive. When the pressure-sensitive adhesive layer 22 has a multi-layer structure, all the layers forming the multi-layer structure may be formed of the pressure-reducing pressure-sensitive adhesive, and some layers in the multi-layer structure may be the pressure-reducing pressure-sensitive adhesive. It may be formed from.

Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include a type of pressure-sensitive adhesive that is cured by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays, and examples thereof include pressure-sensitive adhesives that are cured by irradiation with ultraviolet rays. A curable type pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

The radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 includes, for example, a base polymer such as an acrylic polymer which is an acrylic pressure-sensitive adhesive, and a radiation-polymerizable product having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples thereof include an additive-type radiation-curable pressure-sensitive adhesive containing the above-mentioned monomer component and oligomer component.

The acrylic polymer as the base polymer of the radiation curable pressure-sensitive adhesive preferably contains the most amount of the monomer unit derived from the (meth) acrylic acid ester by mass. Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer, that is, the (meth) acrylic acid ester which is a constituent monomer of the acrylic polymer include (meth) acrylic acid alkyl ester and (meth) acrylic. Acid cycloalkyl esters and (meth) acrylic acid aryl esters can be mentioned. More specifically, as the (meth) acrylic acid ester, the above-mentioned (meth) acrylic acid ester can be mentioned as a constituent monomer of an acrylic polymer for forming an acrylic resin for an adhesive film 10. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. Preferred examples of the constituent monomers of the acrylic polymer include 2-ethylhexyl acrylate and lauryl acrylate. Further, in order to appropriately develop the basic properties such as the adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the ratio of the (meth) acrylic acid ester in the entire constituent monomers of the acrylic polymer is preferable. It is 40% by mass or more, more preferably 60% by mass or more.

The acrylic polymer may contain one or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, for the purpose of modifying its cohesive force and heat resistance. Such other monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. .. More specifically, as the other monomer, the above-mentioned copolymerizable other monomer can be mentioned as a constituent monomer of the acrylic polymer for forming the acrylic resin for the adhesive film 10.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as a (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropantri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane ( Meta) acrylate can be mentioned. "(Meta) acrylate" shall mean "acrylate" and / or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately develop the basic properties such as adhesiveness due to the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 22, the ratio of the polyfunctional monomer in the total constituent monomers of the acrylic polymer is preferably 40% by mass or less. It is preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Polymerization methods include, for example, solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the method for manufacturing a semiconductor device in which the dicing tape 20 or the adhesive film X with the dicing tape is used, the low molecular weight component in the pressure-sensitive adhesive layer 22 in the dicing tape 20 or the adhesive film X with the dicing tape is small. The acrylic polymer preferably has a number average molecular weight of 100,000 or more, more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain, for example, an external cross-linking agent in order to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external cross-linking agent for reacting with a base polymer such as an acrylic polymer to form a cross-linked structure include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based cross-linking agents. The content of the external cross-linking agent in the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 is preferably 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

Examples of the above-mentioned radiopolymerizable monomer component for forming a radiation-curable pressure-sensitive adhesive include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol mono. Hydroxypenta (meth) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates can be mentioned. Examples of the above-mentioned radiopolymerizable oligomer component for forming a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and have a molecular weight of about 100 to 30,000. Things are appropriate. The total content of the radiopolymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range that can appropriately reduce the adhesive strength of the pressure-sensitive adhesive layer 22 to be formed, and is a base polymer such as an acrylic polymer. It is preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass with respect to 100 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

As the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22, for example, a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the end of the polymer main chain in the polymer side chain or the polymer main chain. Also included is an intrinsically curable pressure-sensitive adhesive containing. Such an intrinsically curable pressure-sensitive adhesive is suitable for suppressing an unintended change in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 22.

As the base polymer contained in the intrinsic radiation curable pressure-sensitive adhesive, a polymer having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be adopted as the base polymer contained in the additive-type radiation-curable pressure-sensitive adhesive. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer. After obtaining the compound, a compound having a predetermined functional group (second functional group) capable of reacting with the first functional group and having a radiopolymerizable carbon-carbon double bond can be obtained as carbon-carbon. Examples thereof include a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of the double bond.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Of these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is preferable from the viewpoint of ease of reaction tracking. Further, since it is technically difficult to prepare a polymer having a highly reactive isocyanate group, from the viewpoint of easy preparation or availability of an acrylic polymer, the first functionality on the acrylic polymer side is described above. It is more preferable that the group is a hydroxy group and the second functional group is an isocyanate group. Examples of the isocyanate compound having both a radiopolymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiopolymerizable unsaturated functional group-containing isocyanate compound include methacryloyl isocyanate and 2-methacryloyloxy. Ethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate can be mentioned.

The radiation curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples include quinone, halogenated ketones, acylphosphinoxides, and acylphosphonates. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxypro. Examples include piophenone and 1-hydroxycyclohexylphenylketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)-. Phenyl] -2-morpholinopropane-1 can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal-based compound include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of a base polymer such as an acrylic polymer.

The above-mentioned heat-foaming type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 is a pressure-sensitive adhesive containing a component that foams or expands by heating. Examples of the component that foams or expands by heating include a foaming agent and a heat-expandable microsphere.

Examples of the foaming agent for the heat foaming pressure-sensitive adhesive include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of the organic foaming agent include alkane hydrochloride, such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarboxylicamide, and barium azodicarboxylate, and paratoluenesulfonyl. Hydrazide and diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), hydrazine compounds such as allylbis (sulfonylhydrazide), ρ-toluylenesulfonyl semicarbazide and 4,4'-oxybis Semicarbazide compounds such as (benzenesulfonyl semicarbazide), triazole compounds such as 5-morphory-1,2,3,4-thiatriazole, as well as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl. Examples thereof include N-nitroso compounds such as -N, N'-dinitrosoterephthalamide.

Examples of the heat-expandable microspheres for the heat-foaming pressure-sensitive adhesive include microspheres having a structure in which a substance that easily gasifies and expands by heating is enclosed in a shell. Substances that are easily gasified and expanded by heating include, for example, isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can explode due to the action of thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the non-reducing adhesive strength type pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22 include pressure-sensitive pressure-sensitive adhesives. As the pressure-sensitive pressure-sensitive adhesive, for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be used. When the pressure-sensitive adhesive layer 22 contains an acrylic pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic pressure-sensitive adhesive preferably contains a monomer unit derived from a (meth) acrylic acid ester in a mass ratio. Included as the most abundant monomer unit in. Examples of such an acrylic polymer include the acrylic polymers described above with respect to the radiation curable pressure-sensitive adhesive.

As the pressure-sensitive pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22, a pressure-sensitive adhesive in which the above-mentioned radiation-curable pressure-sensitive adhesive is cured by irradiation with respect to the pressure-reducing pressure-sensitive adhesive may be used. Such a cured radiation-curable type pressure-sensitive adhesive can exhibit adhesiveness due to the polymer component depending on the content of the polymer component even if the adhesive force is reduced by irradiation, and is used in a predetermined manner. In the embodiment, it is possible to exert the adhesive force that can be used to adhesively hold the adherend.

In the pressure-sensitive adhesive layer 22 of the present embodiment, one kind of non-reducing adhesive strength type adhesive may be used, or two or more kinds of non-reducing pressure-sensitive adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 22 may be formed of a non-reducing adhesive strength type adhesive, or a part of the pressure-sensitive adhesive layer 22 may be formed of a non-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a non-reduced pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 22 may be a non-reduced pressure-sensitive adhesive. It may be formed from a pressure-sensitive adhesive, and other portions may be formed from a pressure-reducing pressure-sensitive adhesive. When the pressure-sensitive adhesive layer 22 has a laminated structure, all the layers forming the laminated structure may be formed of a non-reduced adhesive strength type adhesive, and some layers in the laminated structure may be a non-reduced adhesive strength type. It may be formed from an adhesive.

In addition to the above-mentioned components, the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an antiaging agent, a coloring agent, and the like. Colorants include pigments and dyes. Further, the colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 22 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm. Such a configuration is suitable, for example, when the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force of the pressure-sensitive adhesive layer 22 with respect to the adhesive film 10 before and after radiation curing.

The adhesive film X with a dicing tape having the above configuration can be manufactured, for example, as follows.

In the production of the adhesive film 10 of the adhesive film X with a dicing tape, first, an adhesive composition for forming the adhesive film 10 is prepared, and then the composition is applied on a predetermined separator to form an adhesive composition layer. Form. Examples of the separator include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, and plastic films and papers surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. Can be mentioned. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, in this adhesive composition layer, it is dried by heating if necessary, and a cross-linking reaction is caused if necessary. The heating temperature is, for example, 70 to 160 ° C., and the heating time is, for example, 1 to 5 minutes. As described above, the above-mentioned adhesive film 10 can be produced in a form accompanied by a separator.

The dicing tape 20 of the adhesive film X with a dicing tape can be produced by providing the pressure-sensitive adhesive layer 22 on the prepared base material 21. For example, the resin base material 21 can be obtained by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, or a dry laminating method. Can be made. After the film formation, the film or the base material 21 is subjected to a predetermined surface treatment as needed. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing a pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied on the base material 21 or a predetermined separator to form the pressure-sensitive adhesive composition layer. To form. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in this pressure-sensitive adhesive composition layer, heating is performed to dry the pressure-sensitive adhesive composition layer, if necessary, and a cross-linking reaction is caused if necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the base material 21, and then the separator is peeled off from the pressure-sensitive adhesive layer 22. As a result, the above-mentioned dicing tape 20 having a laminated structure of the base material 21 and the pressure-sensitive adhesive layer 22 is produced.

In the production of the adhesive film X with the dicing tape, the adhesive film 10 is next, for example, pressure-bonded to the adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 30 to 50 ° C, preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. When the pressure-sensitive adhesive layer 22 contains the radiation-curable pressure-sensitive adhesive as described above, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the base material may be irradiated after the bonding. Radiation such as ultraviolet rays may be applied to the pressure-sensitive adhesive layer 22 from the side of 21. Alternatively, such irradiation may not be performed in the process of manufacturing the adhesive film X with dicing tape (in this case, the pressure-sensitive adhesive layer 22 can be radiation-cured in the process of using the adhesive film X with dicing tape. be). When the pressure-sensitive adhesive layer 22 has ultraviolet curability, the ultraviolet irradiation amount for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500 mJ / cm ² , preferably 100 to 300 mJ / cm ² . The region (irradiation region R) in which the adhesive film X with the dying tape is irradiated as a measure for reducing the adhesive strength of the adhesive layer 22 is, for example, in the adhesive film bonding region in the adhesive layer 22 as shown in FIG. This is the area excluding the peripheral part.

As described above, the adhesive film X with a dicing tape can be produced. The adhesive film X with a dicing tape may be provided with a separator (not shown) on the adhesive film 10 side in a form of covering at least the adhesive film 10. When the adhesive film 10 is smaller in size than the adhesive layer 22 of the dicing tape 20 and there is a region in the adhesive layer 22 where the adhesive film 10 is not bonded, for example, the separator may use the adhesive film 10 and the adhesive layer 22. At least, it may be provided in a form of covering. The separator is an element for protecting the adhesive film 10 and the adhesive layer 22 from being exposed, and is peeled off from the adhesive film X with a dicing tape when used.

2 to 4 show one semiconductor device manufacturing method performed by using the adhesive film X with a dicing tape.

In this method, first, as shown in FIG. 2A, the semiconductor wafer 30 is bonded onto the adhesive film 10 of the adhesive film X with a dicing tape. Various semiconductor elements (not shown) are already built on one side of the semiconductor wafer 30, and wiring structures and the like (not shown) required for the semiconductor elements are already formed on the one side. In this step, the semiconductor wafer 30 is pressed against the adhesive film X with a dicing tape by a pressure-bonding roll or the like, and for example, the back surface side of the semiconductor wafer 30 is attached to the adhesive film 10 of the adhesive film X with a dicing tape.

Next, as shown in FIG. 2B, dicing is performed on the semiconductor wafer 30 (blade dicing step). Specifically, in a state where the semiconductor wafer 30 is held by the adhesive film X with a dicing tape, the semiconductor wafer 30 and the adhesive film 10 are cut into pieces in units of semiconductor chips by using a rotating blade such as a dicing device. (In the figure, the cutting point is schematically represented by a thick line). As a result, the semiconductor chip 31 with the chip-sized adhesive film 11 is formed.

When the pressure-sensitive adhesive layer 22 in the adhesive film X with dying tape is a radiation-curable pressure-sensitive adhesive layer, instead of the above-mentioned irradiation in the manufacturing process of the adhesive film X with dying tape, before or after the blade dying step. The pressure-sensitive adhesive layer 22 may be irradiated from the side of the base material 21 with ultraviolet rays as a measure for reducing the adhesive strength. When the irradiation is ultraviolet irradiation, the irradiation amount is, for example, 50 to 500 mJ / cm ² , preferably 100 to 300 mJ / cm ² . In the adhesive film X with dicing tape, the region where irradiation as a measure for reducing the adhesive strength of the adhesive layer 22 is performed (shown as the irradiation region R in FIG. 1) is, for example, in the adhesive film bonding region in the adhesive layer 22. This is the area excluding the peripheral part.

Then, after undergoing a cleaning step of cleaning the dicing tape 20 with the semiconductor chip 31 with the adhesive film using a cleaning liquid such as water as necessary, the semiconductor chip 31 with the adhesive film is picked up from the dicing tape 20 (pickup step). ). For example, with respect to the semiconductor chip 31 with an adhesive film to be picked up, a pin member (not shown) of the pick-up mechanism is raised on the lower side in the drawing of the dicing tape 20 to be pushed up through the dicing tape 20, and then a suction jig (not shown). (Omitted) to adsorb and hold.

Next, as shown in FIGS. 3A and 3B, the semiconductor chip 31 with the adhesive film is temporarily fixed onto the mounting substrate 51 (temporary fixing step). This temporary fixing is performed so that the semiconductor chip C or the like on the mounting substrate 51 is embedded in the adhesive film 11 accompanying the semiconductor chip 31. Examples of the mounting board 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. The semiconductor chip C is, for example, a controller chip fixed to the mounting substrate 51 via an adhesive layer 52, and the semiconductor chip 31 arranged on the semiconductor chip C is, for example, various memory chips. The electrode pad (not shown) of the semiconductor chip C and the terminal portion (not shown) of the mounting substrate 51 are electrically connected via the bonding wire 53. As the bonding wire 53, for example, a gold wire, an aluminum wire, or a copper wire can be used. In this step, the semiconductor chip C thus wire-bonded and the entire bonding wire 53 connected to the semiconductor chip C are embedded in the adhesive film 11 associated with the semiconductor chip 31. Further, in this step, the adhesive film 11 may be heated and softened so that the semiconductor chip C and the bonding wire 53 can easily be pushed into the adhesive film 11. The heating temperature is a temperature at which the adhesive film 11 does not reach a completely thermosetting state, for example, 80 to 140 ° C.

Next, as shown in FIG. 3C, the adhesive film 11 is cured by heating (thermosetting step). In this step, the heating temperature is, for example, 100 to 200 ° C., and the heating time is, for example, 0.5 to 10 hours. By going through this step, an adhesive layer formed by thermosetting the adhesive film 11 is formed. This adhesive layer embeds the semiconductor chip C (first semiconductor chip) wire-bonded and mounted on the mounting substrate 51 together with the entire bonding wire 53 connected to the semiconductor chip C (first semiconductor chip), and embeds the semiconductor chip 31 (second semiconductor chip) in the mounting substrate 51. A semiconductor chip) is bonded.

Next, as shown in FIG. 4A, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the mounting substrate 51 are electrically connected via the bonding wire 53. (Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 and the bonding wire 53 and the connection between the terminal portion of the mounting substrate 51 and the bonding wire 53 are realized by ultrasonic welding accompanied by heating. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C., and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed before the above-mentioned thermosetting step.

Next, as shown in FIG. 4B, a sealing resin 54 for sealing the semiconductor chip 31 and the like on the mounting substrate 51 is formed (sealing step). In this step, for example, the sealing resin 54 is formed by a transfer molding technique performed using a mold. Examples of the constituent material of the sealing resin 54 include an epoxy resin. In this step, the heating temperature for forming the sealing resin 54 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 54 does not proceed sufficiently in this step, a post-curing step for completely curing the sealing resin 54 by further heat treatment is performed after this step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours. Even if the adhesive film 11 is not completely heat-cured in the above-mentioned step with reference to FIG. 3C, in the sealing step and the post-curing step, the adhesive film 11 is completely heated together with the sealing resin 54. It is possible to achieve curing.

As described above, it is possible to manufacture a semiconductor device in which a plurality of semiconductor chips are mounted in multiple stages.

In obtaining the semiconductor chip with the adhesive film by using the adhesive film X with the dicing tape, a process including the steps shown in FIGS. 5 to 9 may be performed. Specifically, it is as follows.

First, as shown in FIGS. 5A and 5B, a dividing groove 30a is formed in the semiconductor wafer W (divided groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the Wa side of the first surface by using a rotating blade such as a dicing device. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 5 to 7, the dividing groove 30a is schematically represented by a thick line).

Next, as shown in FIG. 5C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is attached. Is peeled off.

Next, as shown in FIG. 5D, with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning step, in the present embodiment, a semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. Is.

Next, as shown in FIG. 6A, the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive film 10 of the adhesive film X with the dicing tape. After that, as shown in FIG. 6B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 22 in the adhesive film X with dicing tape is a radiation-curable pressure-sensitive adhesive layer, the adhesive film 10 of the semiconductor wafer 30A is replaced with the above-mentioned irradiation in the manufacturing process of the adhesive film X with dicing tape. After the bonding to the base material 21, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet irradiation as a measure for reducing the adhesive strength. When the irradiation is ultraviolet irradiation, the irradiation amount is, for example, 50 to 500 mJ / cm ² , preferably 100 to 300 mJ / cm ² . The region (irradiation region R shown in FIG. 1) in which the adhesive film X with the dying tape is irradiated as a measure for reducing the adhesive strength of the adhesive layer 22 is, for example, the region in the adhesive film 10 bonding region in the adhesive layer 22. This is the area excluding the peripheral part.

Next, after the ring frame 41 is attached on the adhesive film 10 of the adhesive film X with dicing tape, the adhesive film X with dicing tape accompanied by the semiconductor wafer 30A is expanded as shown in FIG. 7A. It is fixed to the holder 42 of.

Next, the first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 7B, and the semiconductor wafer 30A is fragmented into a plurality of semiconductor chips 31. At the same time, the adhesive film 10 of the adhesive film X with a dicing tape is cut into small pieces of the adhesive film 11 to obtain a semiconductor chip 31 with an adhesive film. In this step, the hollow columnar push-up member 43 provided in the expanding device is raised in contact with the dicing tape 20 at the lower side in the drawing of the adhesive film X with the dicing tape, and the semiconductor wafer 30A is bonded with the dicing tape. The dicing tape 20 of the film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that a tensile stress of, for example, 15 to 32 MPa is generated in the dicing tape 20. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in the cool expanding step is, for example, 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is, for example, 3 to 16 mm.

In this step, the thin-walled and fragile portion of the semiconductor wafer 30A is split, resulting in individualization into the semiconductor chip 31. At the same time, in this step, in the adhesive film 10 in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region in which each semiconductor chip 31 is in close contact, while the semiconductor chip 31 is suppressed. The tensile stress generated in the dicing tape 20 acts on the portion facing the dividing groove between the dicing tapes 20 without such a deformation suppressing action. As a result, the portion of the adhesive film 10 facing the dividing groove between the semiconductor chips 31 is cut. After this step, as shown in FIG. 7C, the push-up member 43 is lowered to release the expanded state of the dicing tape 20.

Next, the second expanding step under relatively high temperature conditions is performed as shown in FIG. 8A, and the distance (separation distance) between the semiconductor chips 31 with the adhesive film is widened. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 20 of the adhesive film X with the dicing tape is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor chip 31 with an adhesive film is widened to such an extent that the semiconductor chip 31 with an adhesive film can be appropriately picked up from the dicing tape 20 in the pickup step described later. After this step, as shown in FIG. 8B, the push-up member 43 is lowered to release the expanded state of the dicing tape 20. In order to prevent the separation distance of the semiconductor chip 31 with the adhesive film on the dicing tape 20 from being narrowed after the expanded state is released, the portion outside the semiconductor chip 31 holding region of the dicing tape 20 is formed before the expanded state is released. It is preferable to heat and shrink.

Next, after a cleaning step of cleaning the dicing tape 20 with the semiconductor chip 31 with the adhesive film using a cleaning liquid such as water as necessary, the semiconductor chip 31 with the adhesive film is diced as shown in FIG. Pick up from the tape 20 (pickup process). For example, with respect to the semiconductor chip 31 with an adhesive film to be picked up, the pin member 44 of the pick-up mechanism is raised on the lower side in the drawing of the dicing tape 20, pushed up through the dicing tape 20, and then sucked and held by the suction jig 45. .. In the pick-up step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm. The semiconductor chip 31 with an adhesive film picked up in this way is used in the mounting process in the semiconductor device manufacturing process.

In the semiconductor device manufacturing method using the adhesive film X with dicing tape, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. 5 (d). good. After going through the above-mentioned process with reference to FIG. 5 (c), in the wafer thinning step shown in FIG. 10, the wafer is brought to a predetermined thickness while the semiconductor wafer W is held by the wafer processing tape T2. The semiconductor wafer divider 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed by being thinned by grinding from the second surface Wb. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method) may be adopted, or from the second surface Wb side to the dividing groove 30a. A method of grinding the wafer to the front and then forming a semiconductor wafer split body 30B by causing a crack between the split groove 30a and the second surface Wb by the action of a pressing force from the rotary grindstone to the wafer (second). Method) may be adopted. Depending on the method adopted, the depth of the split groove 30a formed as described above with reference to FIGS. 5 (a) and 5 (b) from the first surface Wa is appropriately determined. .. In FIG. 10, the dividing groove 30a that has undergone the first method, the dividing groove 30a that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. In order to obtain the semiconductor chip 31 with the adhesive film, the semiconductor wafer divider 30B thus produced is bonded to the adhesive film X with the dicing tape instead of the semiconductor wafer 30A, and then FIGS. 7 to 9 are referred to. Then, each step described above may be performed.

11 (a) and 11 (b) specifically represent a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the adhesive film X with a dicing tape. In this step, the hollow columnar push-up member 43 provided in the expanding device is raised in contact with the dicing tape 20 at the lower side in the drawing of the adhesive film X with the dicing tape, and the dicing tape to which the semiconductor wafer divider 30B is bonded is attached. The dicing tape 20 of the adhesive film X is expanded so as to be stretched in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed on the dicing tape 20 under the condition that a tensile stress of, for example, 1 to 100 MPa is generated. The temperature condition in this step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 500 mm / sec. The amount of expansion in this step is, for example, 50 to 200 mm. By such a cool expanding step, the adhesive film 10 of the adhesive film X with a dicing tape is cut into small pieces of the adhesive film 11 to obtain a semiconductor chip 31 with an adhesive film. Specifically, in this step, in the adhesive film 10 in close contact with the pressure-sensitive adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region in which each semiconductor chip 31 of the semiconductor wafer divider 30B is in close contact. On the other hand, the tensile stress generated in the dicing tape 20 acts on the portion facing the dividing groove 30a between the semiconductor chips 31 without such a deformation suppressing action. As a result, the portion of the adhesive film 10 facing the dividing groove 30a between the semiconductor chips 31 is cut. The semiconductor chip 31 with an adhesive film thus obtained is subjected to a mounting process in a semiconductor device manufacturing process after undergoing the above-mentioned pickup process with reference to FIG. 9.

In the semiconductor device manufacturing method using the adhesive film X with dicing tape, the semiconductor wafer 30C manufactured as follows is used instead of the semiconductor wafer 30, the semiconductor wafer 30A, or the semiconductor wafer divider 30B. It may be attached to the adhesive film X with a dicing tape.

In the production of the semiconductor wafer 30C, first, as shown in FIGS. 12 (a) and 12 (b), the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held inside the wafer while being held by the wafer processing tape T3. Laser light with the same light spot is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned division line, and into the semiconductor wafer W due to ablation due to multiphoton absorption. The modified region 30b is formed. The modified region 30b is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30b on a planned division line by irradiating a semiconductor wafer with a laser beam is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. In the method, the laser light irradiation conditions in the present embodiment are appropriately adjusted within the range of, for example, the following conditions.

Laser light irradiation conditions (A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser wavelength 1064 nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linear polarization (B) Condensing lens Magnification 100x or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Movement speed of the mounting table on which the semiconductor substrate is placed 280 mm / sec or less

Next, with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness, and is shown in FIG. 12 (c). As shown, a semiconductor wafer 30C that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). In order to obtain the semiconductor chip 31 with an adhesive film, the semiconductor wafer 30C manufactured as described above is bonded to the adhesive film X with a dicing tape instead of the semiconductor wafer 30A, and then FIGS. 7 to 9 are referred to. Each of the above-mentioned steps may be performed.

13 (a) and 13 (b) specifically represent a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the adhesive film X with a dicing tape. In this step, the hollow columnar push-up member 43 provided in the expanding device is raised in contact with the dicing tape 20 at the lower side in the drawing of the adhesive film X with the dicing tape, and the semiconductor wafer 30C is bonded with the dicing tape. The dicing tape 20 of the film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed on the dicing tape 20 under the condition that a tensile stress of, for example, 1 to 100 MPa is generated. The temperature condition in this step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 500 mm / sec. The amount of expansion in this step is, for example, 50 to 200 mm. By such a cool expanding step, the adhesive film 10 of the adhesive film X with a dicing tape is cut into small pieces of the adhesive film 11 to obtain a semiconductor chip 31 with an adhesive film. Specifically, in this step, cracks are formed in the fragile modified region 30b of the semiconductor wafer 30C, and individualization into the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive film 10 that is in close contact with the pressure-sensitive adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region of the semiconductor wafer 30C in which each semiconductor chip 31 is in close contact. Then, the tensile stress generated in the dicing tape 20 acts on the portion of the wafer facing the crack forming portion without such a deformation suppressing action. As a result, the portion of the adhesive film 10 facing the crack-forming portion between the semiconductor chips 31 is cut off. The semiconductor chip 31 with an adhesive film thus obtained is subjected to a mounting process in a semiconductor device manufacturing process after undergoing the above-mentioned pickup process with reference to FIG. 9.

In the above-mentioned semiconductor device shown in FIG. 4B, the semiconductor chip C and the entire bonding wire 53 connected to the semiconductor chip C are embedded in an adhesive layer formed by curing the adhesive film 11. On the other hand, the semiconductor chip C and a part of the bonding wire 53 connected to the semiconductor chip C on the semiconductor chip C side may be embedded in the adhesive layer formed by curing the adhesive film 11. The adhesive film X with a dicing tape can also be used in manufacturing a semiconductor device having such a configuration.

In the semiconductor device for manufacturing purposes, the semiconductor chip C mounted with flip chips may be adopted instead of the semiconductor chip C mounted with wire bonding, for example, as shown in FIG. The semiconductor chip C shown in FIG. 14 is electrically connected to the mounting substrate 51 via a bump 55, and the underfill agent 56 is filled between the semiconductor chip C and the mounting substrate 51. It is thermoset. In the semiconductor device shown in FIG. 14, the adhesive layer formed by thermally curing the adhesive film 11 embeds a semiconductor chip C (first semiconductor chip) flip-chip mounted in the mounting substrate 51, and the semiconductor is embedded in the mounting substrate 51. The chip 31 (second semiconductor chip) is bonded. The adhesive film X with a dicing tape can also be used in manufacturing a semiconductor device having such a configuration.

In the above-mentioned semiconductor device manufacturing method, a predetermined number is obtained after the temporary fixing step described above with reference to FIGS. 3 (a) and 3 (b) or the heat curing step described above with reference to FIG. 3 (c). The semiconductor chips with an adhesive layer are sequentially die-bonded and laminated on the semiconductor chip 31, and wire-bonded between the electrode pad of each semiconductor chip including the semiconductor chip 31 and the terminal portion of the mounting substrate 51, and then wire-bonded. A sealing step for sealing all semiconductor chips and the like on the mounting substrate 51 with resin may be performed. FIG. 15 shows an example of a semiconductor device manufactured through such a process.

In the semiconductor device shown in FIG. 15, the semiconductor chip C is embedded in the adhesive layer formed by curing the adhesive film 11 interposed between the mounting substrate 51 and the semiconductor chip 31, while the semiconductor chip 31 is on the semiconductor chip 31. A plurality of semiconductor chips 31'are stacked in multiple stages. The electrode pads (not shown) of the semiconductor chips 31 and 31'and the terminal portions (not shown) of the mounting substrate 51 are electrically connected via a bonding wire 53. The sealing resin 54 seals the semiconductor chips 31, 31'and the like on the mounting substrate 51. The adhesive film X with a dicing tape can also be used in manufacturing a semiconductor device having such a configuration.

In the semiconductor device shown in FIG. 15, instead of the wire-bonded semiconductor chip C, for example, as shown in FIG. 16, a flip-chip-mounted semiconductor chip C may be adopted. The adhesive film X with a dicing tape can also be used in manufacturing a semiconductor device having such a configuration.

For example, for the adhesive film 10 in the adhesive film X with a dicing tape that can be used in manufacturing the above-mentioned semiconductor device, the average temperature rise of the cured adhesive film test piece having a width of 5 mm while applying a tensile load of 0.002N. The configuration in which the irreversible displacement amount in the temperature modulation TMA measurement in which the temperature is raised from -60 ° C to 125 ° C under the conditions of a speed of 1 ° C./min, a temperature modulation cycle of 300 seconds, and a temperature modulation amplitude of 5 ° C. is 0.65% or less. The present inventors have found that even when the adhesive film 10 is relatively thick, it is suitable for suppressing the generation of cracks due to thermal stress in the adhesive layer formed from the adhesive film 10. For example, it is as shown with Examples and Comparative Examples described later.

The amount of irreversible displacement in the temperature-modulated TMA measurement of the cured adhesive film test piece having a width of 5 mm in the adhesive film 10 is 0.65% or less, preferably 0.6% or less, and more preferably 0.57. The above-mentioned configuration of% or less is suitable for suppressing the amount of strain relaxation when the internal strain is relaxed by the action of heat stress in the cured adhesive film 10, that is, the adhesive layer to be formed. it is conceivable that. In the formed adhesive layer, the more the amount of internal strain relaxation is suppressed, the less likely it is that cracks due to the relaxation of internal strain will occur.

As described above, the total displacement amount (= reversible displacement amount + irreversible displacement amount) of the adhesive film test piece after curing having a width of 5 mm in the adhesive film 10 in the temperature-modulated TMA measurement is preferably 1. It is 65% or less, more preferably 1.6% or less, more preferably 1.55% or less, and even more preferably 1.5% or less. Such a configuration is preferable in order to suppress the generation of cracks due to thermal stress in the adhesive film 10 after curing, that is, the adhesive layer to be formed.

The adhesive film 10 is measured with a cured adhesive film test piece having a width of 5 mm under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ± 0.5 μm, and a heating rate of 10 ° C./min. As described above, the tensile storage elastic modulus at ° C. is preferably 40 MPa or more, more preferably 50 MPa or more, more preferably 60 MPa or more, more preferably 400 MPa or more, more preferably 500 MPa or more, and even more preferably 600 MPa or more. .. Such a configuration is preferable for suppressing the generation of cracks due to thermal stress in the adhesive layer formed from the adhesive film 10.

As described above, the thickness of the adhesive film 10 is preferably 40 μm or more, more preferably 60 μm or more, and more preferably 80 μm or more. Such a configuration is suitable for using the adhesive film 10 as the adhesive film for embedding a semiconductor chip.

As described above, the thickness of the adhesive film 10 is preferably 150 μm or less, more preferably 140 μm or less, and more preferably 130 μm or less. Such a configuration realizes good splitting of the adhesive film 10 when the adhesive film 10 is attached to the expansion step for splitting as described above in a form in which the adhesive film 10 is in close contact with the adhesive layer 22 side of the dicing tape 20. It is suitable for this.

[Example 1]
<Making an adhesive film>
Acrylic resin A ₁ (trade name "Taisan Resin SG-708-6", weight average molecular weight 700,000, glass transition temperature Tg 4 ° C, manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₁ (commodity) Name "EPPN 501HY", manufactured by Nippon Kayaku Co., Ltd., 144 parts by mass, phenol resin F ₁ (trade name "LVR8210-DL", manufactured by Gunei Chemical Industry Co., Ltd.), 89 parts by mass, and inorganic filler (trade name "" SE-2050MCV ”, silica particles, average particle size 0.5 μm, manufactured by Admatex Co., Ltd. 222 parts by mass, and silane coupling agent (trade name“ KBM-303 ”, manufactured by Shin-Etsu Chemical Co., Ltd.) 1.4 mass A portion and a curing catalyst (trade name "TPP-K", manufactured by Hokuko Kagaku Co., Ltd.) 0.25 parts by mass were added to methyl ethyl ketone and mixed to obtain an adhesive composition. Next, the adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. .. Next, this composition layer was heat-dried at 130 ° C. for 2 minutes to prepare an adhesive film having a thickness of 40 μm on a PET separator. Then, the three adhesive films thus produced were bonded together using a roll laminator to produce the adhesive film (thickness 120 μm) of Example 1. In this bonding, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. The compositions of the adhesive films in Example 1 and each of the Examples and Comparative Examples described below are listed in Table 1 (in Table 1, the unit of each numerical value representing the composition of the adhesive film is the relative "mass" within the composition. Department ").

<Making dicing tape>
Initiation of polymerization with 86.4 parts by mass of 2-ethylhexyl acrylate and 13.6 parts by mass of 2-hydroxyethyl acrylate in a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer. A mixture containing 0.2 parts by mass of benzoyl peroxide as an agent and 65 parts by mass of toluene as a polymerization solvent was stirred at 61 ° C. for 6 hours in a nitrogen atmosphere (polymerization reaction). As a result, a polymer solution containing the acrylic polymer P ₁ was obtained. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurylate as an addition reaction catalyst was mixed at 50 ° C. for 48 hours under an air atmosphere. Stirred in (addition reaction). In the reaction solution, the amount of MOI compounded was 14.6 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ , and the amount of dibutyltin dilaurylate compounded was 1 part by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . It is 0.5 parts by mass. By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in the side chain was obtained. Next, in the polymer solution, 2 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Corporation) and 5 parts by mass of a photopolymerization initiator (2 parts by mass) with respect to 100 parts by mass of the acrylic polymer P ₂ The product name "Irgacure 651" (manufactured by BASF) was added and mixed to obtain a pressure-sensitive adhesive composition. Next, the pressure-sensitive adhesive composition was applied onto the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. .. Next, this composition layer was heat-dried at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 μm on the PET separator. Next, using a laminator, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "Funkrea NRB # 115", thickness 115 μm, manufactured by Gunze Co., Ltd.) was used on the exposed surface of this pressure-sensitive adhesive layer. ) Was laminated at room temperature. The dicing tape was produced as described above.

<Making an adhesive film with dicing tape>
The above-mentioned adhesive film of Example 1 with a PET separator was punched into a disk shape having a diameter of 330 mm. Next, after peeling the PET separator from the adhesive film and peeling the PET separator from the above-mentioned dicing tape, the pressure-sensitive adhesive layer exposed on the dicing tape and the surface exposed by the peeling of the PET separator on the adhesive film are separated. It was bonded using a roll laminator. In this bonding, the bonding speed was 10 mm / sec, the temperature condition was 40 ° C., and the pressure condition was 0.15 MPa. Next, the dicing tape thus bonded to the adhesive film was punched into a disk shape having a diameter of 390 mm so that the center of the dicing tape and the center of the adhesive film coincided with each other. Next, the pressure-sensitive adhesive layer in the dicing tape was irradiated with ultraviolet rays from the side of the EVA base material. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the integrated irradiation light amount was set to 400 mJ / cm ² . As described above, the adhesive film with the dicing tape of Example 1 having a laminated structure including the dicing tape and the adhesive film was produced.

[Example 2]
Acrylic resin A ₁ Instead of 100 parts by mass, acrylic resin A ₂ (trade name "Taisan Resin SG-P3", weight average molecular weight is 850,000, glass transition temperature Tg is 12 ° C, manufactured by Nagase ChemteX Corporation) 100 parts by mass The adhesive film of Example 2 (thickness 120 μm) was produced in the same manner as the adhesive film of Example 1 except that the above was used. Further, the adhesive film with dicing tape of Example 2 is used in the same manner as the adhesive film with dicing tape of Example 1 except that the adhesive film of Example 2 is used in place of the above-mentioned adhesive film of Example 1. Made.

[Example 3]
Acrylic resin A ₃ (trade name "Taisan Resin SG-70L", weight average molecular weight 900,000, glass transition temperature Tg -13 ° C, manufactured by Nagase ChemteX Corporation) 100 parts by mass and epoxy resin E ₂ (trade name) "KI-3000-4", manufactured by Nippon Steel & Sumitomo Metal Corporation) 87 parts by mass, epoxy resin E ₃ (trade name "YL-980", manufactured by Mitsubishi Chemical Co., Ltd.) 79 parts by mass, and phenol resin F ₂ (product) Name "MEH-7851SS", manufactured by Meiwa Kasei Co., Ltd.) 178 parts by mass, inorganic filler (trade name "SE-2050MCV", silica particles, average particle size 0.5 μm, manufactured by Admatex Co., Ltd.) 296 parts by mass , Silane coupling agent (trade name "KBM-303", manufactured by Shin-Etsu Chemical Co., Ltd.) 1.9 parts by mass and curing catalyst (trade name "TPP-K", manufactured by Hokuko Chemical Co., Ltd.) 0.9 parts by mass. Was added to the methyl ethyl ketone and mixed to obtain an adhesive composition. Next, the adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. .. Next, this composition layer was heat-dried at 130 ° C. for 2 minutes to prepare an adhesive film having a thickness of 40 μm on a PET separator. Then, the three adhesive films thus produced were bonded together using a roll laminator to produce an adhesive film (thickness 120 μm) of Example 3. In this bonding, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. Further, the adhesive film with dicing tape of Example 3 is used in the same manner as the adhesive film with dicing tape of Example 1 except that the adhesive film of Example 3 is used in place of the above-mentioned adhesive film of Example 1. Made.

[Example 4]
The blending amount of the epoxy resin E ₂ was changed to 144 parts by mass instead of 87 parts by mass, the blending amount of the epoxy resin E ₃ was changed to 130 parts by mass instead of 79 parts by mass, and the blending amount of the phenol resin F ₂ was changed to 130 parts by mass. 293 parts by mass instead of 178 parts by mass, 444 parts by mass of inorganic filler (trade name "SE-2050MCV", manufactured by Admatex Co., Ltd.) instead of 296 parts by mass, silane coupling The amount of the agent (trade name "KBM-303", manufactured by Shin-Etsu Chemical Co., Ltd.) was changed to 2.8 parts by mass instead of 1.9 parts by mass, and the curing catalyst (trade name "TPP-K", The adhesive film of Example 4 (thickness 120 μm) was the same as that of the adhesive film of Example 3 except that the blending amount of Hokuko Kagaku Co., Ltd. was changed to 1.3 parts by mass instead of 0.9 parts by mass. ) Was produced. Further, the adhesive film with dicing tape of Example 4 is used in the same manner as the adhesive film with dicing tape of Example 1 except that the adhesive film of Example 4 is used in place of the above-mentioned adhesive film of Example 1. Made.

[Comparative Example 1]
The compounding amount of the epoxy resin E ₂ was changed to 102 parts by mass instead of 87 parts by mass, the compounding amount of the epoxy resin E ₃ was changed to 13 parts by mass instead of 79 parts by mass, and the compounding amount of the phenol resin F ₂ was changed to 13 parts by mass. 119 parts by mass instead of 178 parts by mass, 222 parts by mass of inorganic filler (trade name "SE-2050MCV", manufactured by Admatex Co., Ltd.) instead of 296 parts by mass, silane coupling The blending amount of the agent (trade name "KBM-303", manufactured by Shin-Etsu Chemical Co., Ltd.) was changed to 1.4 parts by mass instead of 1.9 parts by mass, and the curing catalyst (trade name "TPP-K", The adhesive film of Comparative Example 1 (thickness 120 μm) was the same as that of the adhesive film of Example 3 except that the blending amount of Hokuko Kagaku Co., Ltd. was changed to 0.67 parts by mass instead of 0.9 parts by mass. ) Was produced. Further, the adhesive film with dicing tape of Comparative Example 1 was used in the same manner as the adhesive film with dicing tape of Example 1 except that the adhesive film of Comparative Example 1 was used in place of the above-mentioned adhesive film of Example 1. Made.

[Comparative Example 2]
The blending amount of the epoxy resin E ₂ was replaced with 87 parts by mass to 92 parts by mass, the epoxy resin E ₃ was not blended, and the blending amount of the phenol resin F ₂ was replaced with 178 parts by mass to 94 parts by mass. The amount of the inorganic filler (trade name "SE-2050MCV", manufactured by Admatex Co., Ltd.) was changed to 286 parts by mass instead of 296 parts by mass, and the silane coupling agent (trade name "KBM-303"), The compounding amount of Shin-Etsu Chemical Co., Ltd.) was changed to 1.4 parts by mass instead of 1.9 parts by mass, and the compounding amount of the curing catalyst (trade name "TPP-K", manufactured by Hokuko Chemical Co., Ltd.) was changed. An adhesive film (thickness 120 μm) of Comparative Example 2 was produced in the same manner as the adhesive film of Example 3 except that 0.6 parts by mass was used instead of 0.9 parts by mass. Further, the adhesive film with dicing tape of Comparative Example 2 was used in the same manner as the adhesive film with dicing tape of Example 1 except that the adhesive film of Comparative Example 2 was used in place of the above-mentioned adhesive film of Example 1. Made.

<Temperature modulation TMA measurement>
Each of the adhesive films of Examples 1 to 4 and Comparative Examples 1 and 2 was cured by heating at 150 ° C. for 1 hour and then heating at 175 ° C. for 1 hour. Then, for each adhesive film test piece (length 40 mm, width 5 mm, thickness 120 μm) cut out from the cured adhesive film, a thermomechanical analyzer (trade name “TMA Q400EM”, manufactured by TA Instruments) was used. Temperature modulation TMA measurement was performed to investigate the total displacement amount and the irreversible displacement amount when the temperature was raised from −60 ° C. to 125 ° C. In this measurement, the measurement mode is the tensile mode, the initial chuck distance is 16 mm, the tensile load continuously applied to the test piece is 0.002 N, the measurement temperature range is -60 ° C to 125 ° C, and the average temperature rise rate is 1 ° C / min. The temperature modulation cycle is 300 seconds, and the temperature modulation amplitude is 5 ° C. Dimensional change in the tensile direction of the test piece when the test piece is heated from -60 ° C to 125 ° C (that is, the difference between the chuck distance at 125 ° C and the initial chuck distance at -60 ° C) is -60. The value divided by the initial chuck distance at ° C is shown in Table 1 as the total displacement amount (%). Further, the irreversible displacement amount is the value obtained by dividing the above-mentioned irreversible component included in the dimensional change in the tensile direction of the test piece when the temperature of the test piece rises from -60 ° C to 125 ° C by the initial chuck distance at -60 ° C. It is listed in Table 1 as (%).

<Tension storage elastic modulus after curing>
Each of the adhesive films of Examples 1 to 4 and Comparative Examples 1 and 2 was cured by heating at 150 ° C. for 1 hour and then heating at 175 ° C. for 1 hour. Then, for each adhesive film test piece (length 40 mm, width 5 mm, thickness 120 μm) cut out from the cured adhesive film, a dynamic elastic modulus measuring device (trade name “RSA-III”, manufactured by TA Instruments) was applied. A tensile test was performed using it to measure the tensile storage modulus. In this tensile test, the measurement mode is the tensile mode, the initial chuck distance is 22.5 mm, the measurement temperature range is 0 ° C to 150 ° C, the temperature rise rate is 10 ° C / min, and the dynamic strain is ± 0.5 μm. The frequency is 1 Hz. Table 1 shows the obtained tensile storage elastic modulus (MPa) at 125 ° C.

[Temperature cycle test]
A semiconductor chip with an adhesive film is obtained using the adhesive films with dicing tapes of Examples 1 to 4 and Comparative Examples 1 and 2, and then the temperature of the bonded sample obtained by die-bonding the semiconductor chip to a substrate. A cycle test was performed.

Each sample to be subjected to the temperature cycle test was prepared as follows. First, a silicon wafer (diameter 12 inches, thickness 60 μm) was bonded to the adhesive film (thickness 120 μm) side of the adhesive film with dicing tape. Next, a silicon wafer on an adhesive film with dicing tape is cut together with the adhesive film by blade dicing using a dicing device (trade name "DFD6260", manufactured by DISCO Corporation), and a chip with an adhesive film (10 mm square). It was diced into pieces. Next, the semiconductor chip with the adhesive film was die-bonded to the organic substrate. Specifically, after the chip with the adhesive film was temporarily fixed to the organic substrate on the adhesive film side, the adhesive film interposed between the organic substrate and the chip was cured to form an adhesive layer. In the temporary fixing, the heating temperature was 120 ° C., the crimping load was 1 kg, and the crimping time was 1 second. In curing the adhesive film, the pressing force was 7 kg / cm ² , the heating temperature was 150 ° C., and the heating time was 1 hour. Next, the semiconductor chip was sealed with a sealing resin on the organic substrate. Specifically, after supplying a sealing resin (trade name "GE-100", manufactured by Hitachi Kasei Co., Ltd.) so as to embed a semiconductor chip on an organic substrate, the sealing resin is 90 at 175 ° C. It was heated for seconds and then at 175 ° C. for 5 hours. As described above, a bonded sample for a temperature cycle test was prepared using each adhesive film with dicing tape.

The temperature cycle test is performed using a temperature cycle tester (trade name "TSA-103ES", manufactured by ESPEC CORPORATION), and each sample is given 700 cycles of temperature change in the range of -55 ° C to 125 ° C. rice field. The one-cycle temperature profile includes a 5 minute retention period at −55 ° C. and a 5 minute retention period at 125 ° C.

After the temperature cycle test, the bonded sample was horizontally polished from the substrate side by mechanical polishing to expose the surface of the adhesive layer on the substrate side in the bonded sample. Then, the exposed surface of the adhesive layer was observed. In this observation, the case where no cracks were generated in the adhesive layer was evaluated as excellent, and the case where cracks were generated in the adhesive layer was evaluated as impossible. The evaluation results are listed in Table 1.

The bonded samples prepared using the adhesive film with dicing tape of Examples 1 to 4 did not crack in the adhesive layer after undergoing the above-mentioned temperature cycle test. On the other hand, the bonded sample produced by using the adhesive film with dicing tape of Comparative Examples 1 and 2 had cracks in the adhesive layer after undergoing the above-mentioned temperature cycle test.

X Adhesive film with dicing tape 10, 11 Adhesive film 20 Dicing tape 21 Base material 22 Adhesive layer W, 30, 30A, 30C Semiconductor wafer 30B Semiconductor wafer divider 30a Dividing groove 30b Modification region 31, 31', C Semiconductor chip

Claims (6)

From -60 ° C to 125 ° C under the conditions of an average temperature rise rate of 1 ° C / min, a temperature modulation cycle of 300 seconds, and a temperature modulation amplitude of 5 ° C while applying a tensile load of 0.002 N to the cured adhesive film test piece having a width of 5 mm. The amount of irreversible displacement in the temperature-modulated TMA measurement that raises the temperature is 0.65% or less .
Tension storage at 125 ° C measured under conditions of initial chuck distance of 22.5 mm, frequency of 1 Hz, dynamic strain ± 0.5 μm, and heating rate of 10 ° C / min for the cured adhesive film test piece with a width of 5 mm. The elastic modulus is 400 MPa or more,
Contains a silane coupling agent,
Contains thermosetting resin and thermoplastic resin,
The thermosetting resin contains an epoxy resin and / or a phenol resin.
Acrylic resin is contained as the thermoplastic resin,
An adhesive film having a thermosetting resin content of 5 to 60% by mass . The adhesive film according to claim 1, wherein the total displacement amount in the temperature-modulated TMA measurement is 1.65% or less. The adhesive film according to claim 1 or 2 , which has a thickness of 40 to 150 μm. Wire bonding on a mounting board While embedding the first semiconductor chip mounted on the mounting board together with all or part of the bonding wire connected to the first semiconductor chip, an adhesive layer for bonding the second semiconductor chip to the mounting board is formed. The adhesive film according to any one of claims 1 to 3 , wherein the adhesive film can be used. The invention according to any one of claims 1 to 3 , wherein an adhesive layer for joining the second semiconductor chip can be formed on the mounting substrate while embedding the first semiconductor chip mounted on the mounting substrate. Adhesive film. A dicing tape having a laminated structure including a base material and an adhesive layer,
An adhesive film with a dicing tape comprising the adhesive film according to any one of claims 1 to 5 , which is removably adhered to the adhesive layer of the dicing tape.

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