CN111334212A - Adhesive film, adhesive film with dicing tape, and method for manufacturing semiconductor device - Google Patents

Adhesive film, adhesive film with dicing tape, and method for manufacturing semiconductor device Download PDF

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Publication number
CN111334212A
CN111334212A CN201911307193.4A CN201911307193A CN111334212A CN 111334212 A CN111334212 A CN 111334212A CN 201911307193 A CN201911307193 A CN 201911307193A CN 111334212 A CN111334212 A CN 111334212A
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China
Prior art keywords
adhesive film
adhesive
dicing tape
semiconductor chip
film
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Application number
CN201911307193.4A
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Chinese (zh)
Inventor
宍户雄一郎
高本尚英
大西谦司
木村雄大
杉村敏正
福井章洋
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Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN111334212A publication Critical patent/CN111334212A/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/383—Natural or synthetic rubber
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2461/00—Presence of condensation polymers of aldehydes or ketones
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2467/00—Presence of polyester
    • C09J2467/005—Presence of polyester in the release coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

Provided are an adhesive film suitable for producing good cutting in a spreading process using the adhesive film with a dicing tape for obtaining a semiconductor chip with the adhesive film, the adhesive film with the dicing tape, and a semiconductor device manufacturing method. The adhesive film (10) has a loss tangent of 1 st peak in the range of-20 to 20 ℃ and a loss tangent of 2 nd peak in the range of 20 to 60 ℃. The value of the 2 nd peak top is preferably 2 or more. The adhesive film (10) preferably contains a thermosetting resin having a softening temperature of 70 ℃ or higher, and preferably contains an acrylic resin having a glass transition temperature of-40 to 10 ℃. The thickness of the adhesive film (10) is, for example, 40 to 150 μm.

Description

Adhesive film, adhesive film with dicing tape, and method for manufacturing semiconductor device
Technical Field
The present invention relates to an adhesive film and an adhesive film with dicing tape which can be used in a process for manufacturing a semiconductor device, and a method for manufacturing a semiconductor device.
Background
In the manufacturing process of a semiconductor device, when a semiconductor chip with an adhesive film having a size corresponding to a chip for die bonding, that is, a semiconductor chip with an adhesive film is obtained, the adhesive film with a dicing tape is sometimes used. The adhesive film with a dicing tape has a disk shape having a size corresponding to a semiconductor wafer to be processed, and includes, for example: a dicing tape comprising a substrate and an adhesive layer; and an adhesive film releasably bonded to the adhesive layer side thereof.
As one of methods for obtaining a semiconductor chip with an adhesive film using an adhesive film with a dicing tape, a method is known in which the adhesive film is cut through a step for spreading the dicing tape in the adhesive film with a dicing tape. In this method, first, a semiconductor wafer as a workpiece is bonded to an adhesive film of an adhesive film with a dicing tape. The semiconductor wafer is processed so that it can be diced into a plurality of semiconductor chips, for example, at the same time as the dicing of the adhesive film. Next, in order to cut the adhesive film so that a plurality of adhesive film pieces each adhering to the semiconductor chip are generated from the adhesive film on the dicing tape, the dicing tape of the adhesive film with the dicing tape is extended (an extending step for cutting). In this expanding step, the semiconductor wafer is also cut at a position on the adhesive film corresponding to a position where the adhesive film is cut in the semiconductor wafer, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the adhesive film with the dicing tape and/or the dicing tape. Then, after going through the steps such as the cleaning step, each semiconductor chip is pushed up by the pin member of the pickup mechanism from the lower side of the dicing tape together with the adhesive film having a size corresponding to the chip and adhering thereto, and then picked up from the dicing tape. Thus, a semiconductor chip with an adhesive film was obtained. The semiconductor chip with the adhesive film is fixed to an adherend such as a mounting board by die bonding via the adhesive film. For example, the adhesive film with dicing tape used as described above and the techniques related to the adhesive film contained therein are described in, for example, patent documents 1 to 3 below.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2007-2173
Patent document 2: japanese patent application laid-open No. 2010-177401
Patent document 3: japanese patent laid-open No. 2012-23161
Disclosure of Invention
Problems to be solved by the invention
The adhesive film which is one component of the adhesive film with a dicing tape used in the spreading step for dicing as described above is required to be appropriately diced at a predetermined dicing position in the spreading step to be separated into individual pieces of the adhesive film together with the semiconductor chip. Further, as the thickness of the adhesive film is increased, such a cut tends to be less likely to occur. In the case of a conventional adhesive film having a relatively large thickness, a part of a predetermined breaking position may not be broken in the spreading step, and a break (a breaking crack) may occur in a position other than the predetermined breaking position in the spreading step.
The present invention has been made in view of the above circumstances, and an object thereof is to provide an adhesive film suitable for achieving good cleaving in a spreading process using an adhesive film with a dicing tape for obtaining a semiconductor chip with an adhesive film, an adhesive film with a dicing tape, and a semiconductor device manufacturing method.
Means for solving the problems
According to the 1 st aspect of the present invention, there is provided an adhesive film. The adhesive film has a loss tangent (loss elastic modulus/storage modulus) in an uncured state having a 1 st peak in a range of-20 to 20 ℃ and a 2 nd peak in a range of 20 to 60 ℃. The 1 st peak top and the 2 nd peak top are separated from each other in a graph showing the temperature dependence of the loss tangent. The loss tangent can be determined by, for example, dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring apparatus (trade name "RSA-III", manufactured by TA Instrument Co., Ltd.). In this measurement, for example, the measurement mode is set to the stretching mode, the initial inter-chuck distance is set to 22.5mm, the measurement temperature range is set to, for example, -30 ℃ to 100 ℃, the temperature rise rate is set to, for example, 10 ℃/min, and the frequency is set to, for example, 1 Hz. From the dynamic viscoelasticity measurement, the loss tangent tan δ (═ loss elastic modulus E "/storage modulus E') can be determined. The adhesive film having such a structure can be used to obtain a semiconductor chip with an adhesive film in the manufacturing process of a semiconductor device so as to be in close contact with the pressure-sensitive adhesive layer side of the dicing tape.
In the manufacturing process of a semiconductor device, when a semiconductor chip with an adhesive film is obtained as described above, a spreading step for cleaving using the adhesive film with a dicing tape may be performed. The extension step is performed, for example, in a low-temperature environment of 0 ℃ or lower. The present inventors have found that, even in the case of the above-described configuration in which the adhesive film constituting one component of the adhesive film with dicing tape has a loss tangent of 1 st peak in the range of-20 to 20 ℃ and a loss tangent of 2 nd peak in the range of 20 to 60 ℃, the adhesive film is suitable for causing a cleavage at a predetermined cleavage site in the stretching step. For example, as shown in examples and comparative examples described later.
In the conventional adhesive film, it is considered that the breaking strength of the film is excessively high because the film is not cut at a part of a predetermined cutting position in the stretching step. In the conventional adhesive film, it is considered that the reason why the cleavage cracks occur at positions other than the planned cleavage positions in the propagation step is as follows: since the elasticity of the film is too strong, the stress for cleaving in the stretching step is not appropriately transmitted to the intended cleaving position of the film, and brittle fracture may occur at a position other than the intended cleaving position. On the other hand, loss tangent is an index indicating that viscosity is stronger as the loss tangent is larger, and is a ratio of viscosity to elasticity of a material, which relates to mechanical properties of the material. The above-described configuration in which the loss tangent of the adhesive film has a peak in the range of 20 to 60 ℃ on the high temperature side and a peak in the range of-20 to 20 ℃ on the low temperature side is suitable for achieving a balance between the elasticity and the tackiness of the adhesive film under low temperature conditions of, for example, 0 ℃ or less in the stretching step for cutting and for achieving a reduction in the breaking strength, and therefore, is suitable for achieving good cutting in the stretching step. In the above-described configuration relating to the 1 st and 2 nd peaks in the present adhesive film, it is considered that the adhesive film is suitable for suppressing the occurrence of brittle fracture (fracture crack) at a position other than the planned fracture position in the propagation step to appropriately transmit the stress for fracture to the planned fracture position of the film, and for suppressing the fracture strength to facilitate the occurrence of fracture at the planned fracture position.
As described above, the adhesive film according to claim 1 is suitable for achieving satisfactory cutting when used in a cutting expanding step so as to adhere closely to the pressure-sensitive adhesive layer side of a dicing tape.
In the adhesive film, the value of the 2 nd peak is preferably 2 or more, more preferably 2.2 or more, and still more preferably 2.4 or more. Such a configuration contributes to obtaining a balance between the elasticity and the viscosity of the adhesive film of the present invention under a predetermined low temperature condition in which the stretching step for cleaving is performed, and to achieving a reduction in the breaking strength thereof. This configuration is preferable in ensuring adhesion of the adhesive film to a work, such as a semiconductor wafer, when the work is bonded to the adhesive film.
The adhesive film preferably contains a thermosetting resin, and more preferably contains an epoxy resin and/or a phenol resin. When the adhesive film contains a thermosetting resin, the softening temperature of the thermosetting resin is preferably 70 ℃ or higher, more preferably 75 ℃ or higher, and still more preferably 80 ℃ or higher. The adhesive film preferably contains an acrylic resin having a glass transition temperature of-40 to 10 ℃. The glass transition temperature of the acrylic resin is more preferably-35 to 5 ℃. With these configurations, the above-described configurations relating to the 1 st and 2 nd peaks in the adhesive film can be easily realized.
The thickness of the adhesive film is preferably 40 μm or more, more preferably 60 μm or more, and still more preferably 80 μm or more. Such a configuration is preferable in that the present adhesive film is used as an adhesive film for forming an adhesive layer (a thick adhesive film for embedding a semiconductor chip) for embedding a 1 st semiconductor chip, which is wire-bonded to a mounting board, in a manner such that the 1 st semiconductor chip is embedded together with the entire or a part of a bonding wire connected to the 1 st semiconductor chip and the 2 nd semiconductor chip is bonded to the mounting board. Alternatively, this configuration relating to the thickness of the adhesive film is preferable in that the present adhesive film is used as an adhesive film for forming an adhesive layer (a thick adhesive film for bonding a semiconductor chip accompanying embedding of a portion of a bonding wire) for covering a bonding wire connection portion of a 1 st semiconductor chip mounted on a mounting substrate by wire bonding and embedding a portion of the bonding wire and bonding a 2 nd semiconductor chip to the 1 st semiconductor chip. Alternatively, this configuration relating to the thickness of the adhesive film is preferable in that the present adhesive film is used as an adhesive film for forming an adhesive layer (a thick adhesive film for embedding a chip) for embedding a 1 st semiconductor chip flip-chip mounted on a mounting substrate and bonding a 2 nd semiconductor chip to the mounting substrate. On the other hand, the thickness of the adhesive film is preferably 150 μm or less, more preferably 140 μm or less, more preferably 130 μm or less, and more preferably 120 μm or less. Such a configuration is suitable for the present adhesive film to avoid an excessively high breaking strength.
According to the 2 nd aspect of the present invention, there is provided an adhesive film with a dicing tape. The adhesive film with a dicing tape comprises: a dicing tape, and the adhesive film according to claim 1. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive film is releasably adhered to the adhesive layer of the dicing tape. When the adhesive film with a dicing tape including the adhesive film according to claim 1 of the present invention is used in the dicing stretching step, it is suitable for achieving good dicing of the adhesive film.
According to the 3 rd aspect of the present invention, there is provided a semiconductor device manufacturing method. The method for manufacturing a semiconductor device includes the following steps 1 and 2. In the step 1, a semiconductor wafer which can be singulated into a plurality of semiconductor chips or a semiconductor wafer divided body including a plurality of semiconductor chips is bonded to the adhesive film of the adhesive film with a dicing tape according to the aspect 2 of the invention. In the step 2, the dicing tape in the adhesive film with the dicing tape is spread to cut the adhesive film, thereby obtaining a semiconductor chip with an adhesive film. The present method for manufacturing a semiconductor device, which comprises the step 2, i.e., the dicing and expanding step, performed using the adhesive film with dicing tape including the adhesive film according to claim 1, is suitable for achieving favorable dicing of the adhesive film in the expanding step and for achieving singulation of semiconductor chips.
Drawings
Fig. 1 is a schematic cross-sectional view of an adhesive film with a dicing tape according to an embodiment of the present invention.
Fig. 2 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 3 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 4 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 5 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 6 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 7 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 8 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 9 shows an embodiment of a semiconductor element manufactured by a method for manufacturing a semiconductor device according to an embodiment of the present invention.
Fig. 10 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 11 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 12 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 13 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 14 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 15 shows a part of the steps in the method for manufacturing a semiconductor device according to the embodiment of the present invention.
Fig. 16 is a graph showing the loss tangent of the adhesive film according to example 1.
Fig. 17 is a graph showing the loss tangent of the adhesive film according to example 2.
Fig. 18 is a graph showing the loss tangent of the adhesive film according to example 3.
Fig. 19 is a graph showing the loss tangent of the adhesive film of comparative example 1.
Fig. 20 is a graph showing the loss tangent of the adhesive film of comparative example 2.
Fig. 21 is a graph showing the loss tangent of the adhesive film of comparative example 3.
Fig. 22 is a graph showing the loss tangent of the adhesive film of comparative example 4.
Description of the reference numerals
X-shaped adhesive film with dicing tape
10. 11 adhesive film
20 cutting belt
21 base material
22 adhesive layer
W, 30A, 30C semiconductor wafer
30B semiconductor wafer division body
30a dividing groove
30b modified region
31. 31' semiconductor chip
51 mounting substrate
53 bond wire
Detailed Description
Fig. 1 is a schematic cross-sectional view of an adhesive film X with a dicing tape according to an embodiment of the present invention. The adhesive film X with dicing tape has a laminated structure including the adhesive film 10 and the dicing tape 20 according to one embodiment of the present invention. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The pressure-sensitive adhesive layer 22 has a pressure-sensitive adhesive surface 22a on the side of the adhesive film 10. The adhesive film 10 is releasably adhered to the pressure-sensitive adhesive layer 22 of the dicing tape 20 and/or the adhesive surface 22a thereof. The adhesive film X with a dicing tape can be used in, for example, a spreading step described later in a process of obtaining a semiconductor chip with an adhesive film in the manufacture of a semiconductor device. The adhesive film X with dicing tape and the adhesive film 10 have a disk shape, and are arranged concentrically in the present embodiment. The diameter of the adhesive film 10 is, for example, in the range of 300 to 390mm (12-inch wafer compatible type), 200 to 280mm (8-inch wafer compatible type), 450 to 530mm (18-inch wafer compatible type), or 150 to 230mm (6-inch wafer compatible type).
The adhesive film 10 in the dicing tape-attached adhesive film X has a structure that can function as a thermosetting die bonding adhesive. The adhesive film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have a composition containing a thermoplastic resin having a thermosetting functional group that can react with a curing agent to bond as a resin component. When the adhesive film 10 has a composition containing a thermoplastic resin having a thermosetting functional group, the adhesive film 10 does not need to further contain a thermosetting resin. Such an adhesive film 10 may have a single-layer structure or a multilayer structure having different compositions between adjacent layers.
Examples of the thermosetting resin in the case where the adhesive film 10 has a composition containing a thermosetting resin and a thermoplastic resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. In the present embodiment, the adhesive film 10 preferably contains an epoxy resin and/or a phenol resin. Epoxy resin tends to have a small content of ionic impurities or the like which may cause corrosion of a semiconductor chip to be die-bonded, and is therefore preferred as the thermosetting resin in the adhesive film 10. As a curing agent for making the epoxy resin thermosetting, a phenol resin is preferable. The adhesive film 10 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins.
Examples of the epoxy resin include bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrahydroxyphenylethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins. Phenol novolac type epoxy resin, o-cresol novolac type epoxy resin, biphenyl type epoxy resin, trihydroxyphenyl methane type epoxy resin, and tetrahydroxyphenyl ethane type epoxy resin are preferable as the epoxy resin in the adhesive film 10 because they have high reactivity with a phenol resin as a curing agent and are excellent in heat resistance.
Examples of the phenol resin which functions as a curing agent for the epoxy resin include novolak phenol resins, resol phenol resins, and polyoxystyrenes such as polyoxystyrenes. Examples of the novolak type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, and a nonylphenol novolak resin. The adhesive film 10 may contain one kind of phenol resin, or may contain two or more kinds of phenol resins as a curing agent for the epoxy resin. When a phenol novolac resin or a phenol aralkyl resin is used as a curing agent for an epoxy resin as an adhesive for die bonding, the adhesive tends to have improved connection reliability, and therefore, it is preferable as the curing agent for an epoxy resin in the adhesive film 10.
When the adhesive film 10 contains an epoxy resin and a phenol resin as a curing agent thereof, both resins are blended in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, to 1 equivalent of an epoxy group in the epoxy resin and a hydroxyl group in the phenol resin. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin is sufficiently performed when the adhesive film 10 is cured.
The content of the thermosetting resin in the adhesive film 10 is, for example, 20 to 70% by mass, and preferably 30 to 60% by mass, from the viewpoint that the adhesive film 10 properly functions as a thermosetting adhesive. When the adhesive film 10 contains both an epoxy resin and a phenol resin, the total content of the two resins in the adhesive film 10 is preferably 40 to 55 mass%, more preferably 40 to 50 mass%, and still more preferably 42 to 48 mass%.
When the adhesive film 10 contains a thermosetting resin, the softening temperature of the thermosetting resin is preferably 70 ℃ or higher, more preferably 75 ℃ or higher, and still more preferably 80 ℃ or higher. The softening temperature is, for example, 120 ℃. The softening temperature of the adhesive film can be measured, for example, by using an automatic softening point measuring apparatus "EX-719 PD 4" manufactured by ELEX SCIENTIFIC.
When the adhesive film 10 contains a thermosetting resin such as a phenol resin having a softening temperature of preferably 70 ℃ or higher, more preferably 75 ℃ or higher, and even more preferably 80 ℃ or higher, the content of the thermosetting resin in the adhesive film 10 is preferably 5 to 25 mass%, more preferably 6 to 20 mass%, more preferably 7 to 18 mass%, and even more preferably 8 to 16 mass%.
The thermoplastic resin in the adhesive film 10 functions as an adhesive, for example, and when the adhesive film 10 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermoplastic resin include acrylic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymers, ethylene-acrylic acid ester copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6, 6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamide-imide resins, and fluorine resins. The adhesive film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resins are preferred as the thermoplastic resin in the adhesive film 10 because they have few ionic impurities and high heat resistance.
When the adhesive film 10 contains an acrylic resin as the thermoplastic resin, the acrylic polymer forming the acrylic resin preferably contains a monomer unit derived from a (meth) acrylate ester in the largest mass ratio. "(meth) acrylic acid" means "acrylic acid" and/or "methacrylic acid".
Examples of the (meth) acrylate used as a monomer unit for forming the acrylic polymer, that is, the (meth) acrylate used as a constituent monomer of the acrylic polymer include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. Examples of the alkyl (meth) acrylate include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, tert-butyl ester, pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl ester, and eicosyl ester of (meth) acrylic acid. Examples of the cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylates. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylate may be used, or two or more kinds of (meth) acrylates may be used. The acrylic polymer for forming the acrylic resin may be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.
The acrylic polymer may contain one or two or more other monomers copolymerizable with the (meth) acrylate ester as a constituent monomer for the purpose of modifying, for example, the cohesive force and heat resistance thereof. Examples of such monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamides, and acrylonitriles. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, and (meth) acryloyloxynaphthalenesulfonic acid. Examples of the monomer having a phosphoric acid group include 2-hydroxyethyl acryloyl phosphate.
From the viewpoint of achieving high cohesive force of the adhesive film 10, the acrylic polymer contained in the adhesive film 10 as the acrylic resin is, for example, a copolymer of butyl acrylate and ethyl acrylate and acrylonitrile.
When the adhesive film 10 has a composition containing a thermoplastic resin having a thermosetting functional group, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin, for example. The acrylic resin used for forming the thermosetting functional group-containing acrylic resin preferably contains the largest proportion by mass of monomer units derived from a (meth) acrylate ester. As such a (meth) acrylate, for example, the above-mentioned (meth) acrylate can be used as a constituent monomer of an acrylic polymer forming the acrylic resin contained in the adhesive film 10. On the other hand, examples of the thermosetting functional group used for forming the thermosetting functional group-containing acrylic resin include glycidyl groups, carboxyl groups, hydroxyl groups, and isocyanate groups. Among these, glycidyl groups and carboxyl groups can be suitably used. That is, as the acrylic resin having a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. The curing agent that can react with the thermosetting functional group in the thermosetting functional group-containing acrylic resin is selected according to the kind of the thermosetting functional group. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the above-mentioned phenol resin can be used as the curing agent for the epoxy resin.
In order to achieve a certain degree of crosslinking in the adhesive film 10 before curing for die bonding, that is, in the uncured adhesive film 10, for example, it is preferable to blend in advance a polyfunctional compound capable of reacting with and bonding to a functional group or the like at the molecular chain terminal of the resin component contained in the adhesive film 10 as a crosslinking agent in the adhesive film-forming resin composition. Such a configuration is preferable in terms of improving the adhesive properties at high temperatures and improving the heat resistance of the adhesive film 10. Examples of such a crosslinking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and an adduct of a polyol and a diisocyanate. The content of the crosslinking agent in the resin composition for forming an adhesive film is preferably 0.05 parts by mass or more in terms of improving the cohesive force of the formed adhesive film 10 and preferably 7 parts by mass or less in terms of improving the adhesive force of the formed adhesive film 10, relative to 100 parts by mass of the resin having the functional group capable of reacting with the crosslinking agent to bond. As the crosslinking agent in the adhesive film 10, other polyfunctional compounds such as epoxy resins may be used in combination with the polyisocyanate compound.
The glass transition temperature of the acrylic resin and the acrylic resin containing a thermosetting functional group to be blended in the adhesive film 10 is preferably-40 to 10 ℃, more preferably-40 to-18 ℃, and still more preferably-35 to-20 ℃. As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature (. degree. C.) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (. degree. C.) of the homopolymer of the monomer i. For the glass transition temperature of the homopolymer, literature values can be used. The glass transition temperatures of the various homopolymers are listed, for example, in "synthetic resin entry for coating of New Polymer library 7" (North okang Co., Ltd., Polymer journal, 1995), "list of acrylates (1997 edition)" (MITSUBISHIRAYON CO., LTD.). The glass transition temperature of the homopolymer of the monomer can be determined by the method specifically described in Japanese patent laid-open No. 2007-51271.
Fox equation 1/(273+ Tg) ═ Σ [ Wi/(273+ Tgi) ]
When the adhesive film 10 contains an acrylic resin having a glass transition temperature of-40 to 10 ℃, the content of the acrylic resin in the adhesive film 10 is preferably 8 to 25 mass%, more preferably 10 to 22 mass%, more preferably 12 to 20 mass%, more preferably 14 to 19 mass%, and more preferably 15 to 18 mass%.
The adhesive film 10 may contain a filler. The incorporation of the filler into the adhesive film 10 is preferable in terms of adjusting physical properties such as breaking strength, breaking elongation, and elastic modulus of the adhesive film 10. Examples of the filler include inorganic fillers and organic fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a plate shape. The adhesive film 10 may contain one kind of filler, or may contain two or more kinds of fillers.
Examples of the constituent material of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, mercury, copper, and nickel, alloys, amorphous carbon, and graphite. When the adhesive film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more, and still more preferably 30% by mass or more. The content is preferably 60% by mass or less, more preferably 55% by mass or less, and still more preferably 50% by mass or less.
Examples of the constituent material of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyether ether ketone, polyetherimide, and polyesterimide. When the adhesive film 10 contains an organic filler, the content of the organic filler is, for example, 2 to 20% by mass.
When the adhesive film 10 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.05 to 1 μm. The filler having an average particle diameter of 0.005 μm or more is preferably used in order to achieve high wettability and adhesiveness of the adhesive film 10 to an adherend such as a semiconductor wafer. The filler having an average particle diameter of 10 μm or less is preferably used in order to obtain a sufficient filler-adding effect to the adhesive film 10 and to ensure heat resistance. The average particle diameter of the filler can be determined, for example, by using a photometric particle size distribution meter (trade name "LA-910", manufactured by HORIBA, ltd.).
The adhesive film 10 may contain a heat curing catalyst. The addition of the thermosetting catalyst to the adhesive film 10 is preferable in that the curing reaction of the resin component is sufficiently advanced at the time of curing the adhesive film 10, and the curing reaction rate is increased. Examples of such a thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2 '-methylimidazolyl- (1') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -undecylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -ethyl-4 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Examples of the triphenylphosphine-based compound include triphenylphosphine, tris (butylphenyl) phosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane-based compound include trichloroborane. The adhesive film 10 may contain one kind of heat curing catalyst, or may contain two or more kinds of heat curing catalysts.
The adhesive film 10 may contain one or two or more other components as required, for example, a flame retardant, a silane coupling agent, and an ion scavenger, for example, antimony trioxide, antimony pentoxide, and a brominated epoxy resin, for example, β - (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, γ -epoxypropoxypropyltrimethoxysilane, and γ -epoxypropoxypropylmethyldiethoxysilane, for example, hydrotalcite, bismuth hydroxide, hydrous antimony oxide (for example, "IXE-300" manufactured by Tokyo Synthesis Co., Ltd.), zirconium phosphate having a specific structure (for example, "IXE-100" manufactured by Tokyo Synthesis Co., Ltd.), magnesium silicate (for example, "KYAAD 600" manufactured by Kyokoku Kogyo Co., Ltd.), magnesium silicate (for example, magnesium silicate, as an ion forming complex with metal ion, a compound which may be formed between metal ion and a metal ion, as an ion forming compound, a bis- (2-tert-butylphenyl) -benzotriazole, 2- (2-hydroxyphenyl) benzotriazole, 2- (2-hydroxy-2-phenyl) benzotriazole, 2- (2-hydroxy-2-phenyl) -2-bis- (2-octylphenyl) -2- (2-octylphenyl) benzotriazole, 5- (2-hydroxy-2-phenyl) benzotriazole, 2- (2-hydroxy-phenyl) -2-phenyl) benzotriazole, 5-2- (2-hydroxy-phenyl) benzotriazole, 5-2-hydroxy-phenyl) benzotriazole, 5-2- (2-hydroxy-phenyl) propyl) benzotriazole, 5-2-tert-phenyl) benzotriazole, 5-tert-butyl) benzotriazole, 5-phenyl-2-butyl) benzotriazole, 5-2-tert-butyl-2-butyl-phenyl-2-hydroxy-2-phenyl-2-tert-butyl-2-hydroxy-2-tert-butyl-phenyl-2-phenyl-2-tert-butyl-phenyl-2-butyl-2-butyl-2-phenyl-2-butyl-2-1-2-hydroxy-1-2-1-tert-hydroxy-butyl-1-hydroxy-2-phenyl-1-phenyl-2-1-2-phenyl-2-phenyl-2-1-2-butyl-phenyl-2-phenyl-1-phenyl-2-phenyl-2-phenyl-2-1-phenyl-1-hydroxy-phenyl-2-phenyl-2-phenyl-2-phenyl-2-phenyl-2-phenyl-.
The thickness of the adhesive film 10 is preferably 40 μm or more, more preferably 60 μm or more, and still more preferably 80 μm or more. The thickness of the adhesive film 10 is preferably 150 μm or less, more preferably 140 μm or less, more preferably 130 μm or less, and more preferably 120 μm or less.
The viscosity of the adhesive film 10 in an uncured state at 120 ℃ is, for example, 300 to 7000 pas.
The adhesive film 10 has a loss tangent (loss elastic modulus/storage modulus) in an uncured state having a peak top (1 st peak) in a range of-20 to 20 ℃ and also having a peak top (2 nd peak) in a range of 20 to 60 ℃. The 1 st peak top and the 2 nd peak top are separated from each other in a graph showing the temperature dependence of the loss tangent. The peak 1 of the adhesive film 10 is preferably in the range of-15 to 18 ℃, more preferably-10 to 16 ℃, more preferably-5 to 14 ℃, and more preferably 0 to 10 ℃. The value of the 1 st peak in the adhesive film 10 is preferably 0.1 to 1, more preferably 0.1 to 0.5. On the other hand, the peak 2 is preferably in the range of 25 to 55 ℃, more preferably 30 to 53 ℃, and still more preferably 35 to 51 ℃. The value of the 2 nd peak in the adhesive film 10 is preferably 2 or more, more preferably 2.2 or more, and still more preferably 2.4 or more. The value of the 2 nd peak top is, for example, 4 or less. The loss tangent of the adhesive film 10 can be adjusted by adjusting the glass transition temperature of a thermoplastic resin such as an acrylic resin contained in the adhesive film 10, adjusting the softening temperature of a thermosetting resin such as an epoxy resin or a phenol resin contained in the adhesive film 10, and adjusting the blending ratio of the thermoplastic resin and the thermosetting resin in the adhesive film 10.
The loss tangent of such an adhesive film can be determined, for example, by dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring apparatus (trade name "RSA-III", manufactured by TA instruments). In this measurement, the measurement mode is set to the stretching mode, the initial inter-chuck distance is set to 22.5mm, the measurement temperature range is set to, for example, -30 ℃ to 100 ℃, the temperature rise rate is set to, for example, 10 ℃/min, and the frequency is set to, for example, 1 Hz. The adhesive film test piece to be measured has a width of, for example, 10mm and a length of, for example, 30 mm. The loss tangent tan δ (═ loss elastic modulus E "/storage modulus E') of the adhesive film can be determined from the dynamic viscoelasticity measurement.
The base material 21 of the dicing tape 20 in the dicing tape-attached adhesive film X is an element that functions as a support in the dicing tape 20 and/or the dicing tape-attached adhesive film X. The substrate 21 is, for example, a plastic substrate, and a plastic film can be suitably used as the plastic substrate. Examples of the material constituting the plastic substrate include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aramid, fluororesin, cellulose resin, and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, an ethylene-vinyl acetate copolymer, ionomer resin, an ethylene- (meth) acrylic acid copolymer, an ethylene- (meth) acrylate copolymer, an ethylene-butene copolymer, and an ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 21 may be formed of one material or two or more materials. The substrate 21 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 22 on the substrate 21 has ultraviolet-curing properties, the substrate 21 preferably has ultraviolet-transmitting properties. When the substrate 21 is formed of a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.
In the use of the adhesive film X with a dicing tape, in the case where the dicing tape 20 and/or the base material 21 is shrunk by, for example, partial heating, the base material 21 preferably has heat shrinkability. In the case where the base 21 is formed of a plastic film, the base 21 is preferably a biaxially stretched film in terms of achieving isotropic heat shrinkability of the dicing tape 20 and/or the base 21. The heat shrinkage rate in a heat treatment test in which the dicing tape 20 and/or the base material 21 are/is heated at 100 ℃ for 60 seconds is, for example, 2 to 30%.
The surface of the substrate 21 on the side of the pressure-sensitive adhesive layer 22 may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for improving adhesion to the pressure-sensitive adhesive layer 22. Examples of the physical treatment include corona treatment, plasma treatment, blast treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, and ionizing radiation treatment. The chemical treatment may be, for example, a chromic acid treatment.
The thickness of the base material 21 is preferably 40 μm or more, preferably 50 μm or more, and more preferably 60 μm or more, from the viewpoint of ensuring the strength with which the base material 21 functions as a support in the dicing tape 20 and/or the dicing tape-attached adhesive film X. From the viewpoint of achieving appropriate flexibility of the dicing tape 20 and/or the dicing tape-attached adhesive film X, the thickness of the base material 21 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less.
The adhesive layer 22 of the dicing tape 20 contains an adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive (pressure-sensitive adhesive-reducing type pressure-sensitive adhesive) in which the adhesive strength is intentionally reduced by an external action during use of the pressure-sensitive adhesive film X with a dicing tape, or a pressure-sensitive adhesive (pressure-sensitive adhesive-non-reducing type pressure-sensitive adhesive) in which the adhesive strength is hardly or not reduced by an external action during use of the pressure-sensitive adhesive film X with a dicing tape. Whether the adhesive force-reducing adhesive or the adhesive force-non-reducing adhesive is used as the adhesive in the adhesive layer 22 can be appropriately selected depending on the use form of the adhesive film X with a dicing tape, such as the method and conditions for singulating the semiconductor chips into pieces using the adhesive film X with a dicing tape.
In the case of using an adhesive force reducing type adhesive as the adhesive in the adhesive layer 22, during the use of the adhesive film X with a dicing tape, a state in which the adhesive layer 22 exhibits a relatively high adhesive force and a state in which it exhibits a relatively low adhesive force can be separately used. For example, in order to suppress or prevent the adhesive film 10 from being lifted off or peeled off from the adhesive layer 22 when the adhesive film X with a dicing tape is used in the spreading step described later, the high adhesive force state of the adhesive layer 22 may be used, and in the picking-up step described later for picking up the semiconductor chip with an adhesive film from the dicing tape 20 with the adhesive film X with a dicing tape, the low adhesive force state of the adhesive layer 22 may be used to easily pick up the semiconductor chip with an adhesive film from the adhesive layer 22.
Examples of the pressure-sensitive adhesive having a reduced adhesive strength include a pressure-sensitive adhesive (radiation-curable pressure-sensitive adhesive) curable by irradiation with radiation during use of the pressure-sensitive adhesive film X with a dicing tape, a heat-expandable pressure-sensitive adhesive, and the like. In the pressure-sensitive adhesive layer 22 of the present embodiment, one kind of the pressure-sensitive adhesive having a reduced adhesive strength may be used, or two or more kinds of the pressure-sensitive adhesive having a reduced adhesive strength may be used. The entire pressure-sensitive adhesive layer 22 may be formed of a pressure-sensitive adhesive of reduced adhesive strength, or a part of the pressure-sensitive adhesive layer 22 may be formed of a pressure-sensitive adhesive of reduced adhesive strength. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a pressure-sensitive adhesive of reduced adhesive strength, or a predetermined portion of the pressure-sensitive adhesive layer 22 may be formed of a pressure-sensitive adhesive of reduced adhesive strength, and the other portion (for example, a region located outside the central region, which is the region to be bonded to the ring frame) may be formed of a pressure-sensitive adhesive of non-reduced adhesive strength. When the pressure-sensitive adhesive layer 22 has a multilayer structure, all layers forming the multilayer structure may be formed of a pressure-sensitive adhesive of reduced adhesive strength, or some layers in the multilayer structure may be formed of a pressure-sensitive adhesive of reduced adhesive strength.
Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include pressure-sensitive adhesives of a type that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays, and particularly a type that is cured by irradiation with ultraviolet rays (ultraviolet-curable pressure-sensitive adhesive) can be used suitably.
Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include an additive-type radiation-curable pressure-sensitive adhesive containing a base polymer such as an acrylic polymer as an acrylic pressure-sensitive adhesive, and a radiation-polymerizable monomer component and oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.
The acrylic polymer as the base polymer of the radiation curable adhesive preferably contains the largest proportion by mass of monomer units derived from a (meth) acrylate ester. Examples of the (meth) acrylate ester of the monomer unit for forming the acrylic polymer, that is, the (meth) acrylate ester as the constituent monomer of the acrylic polymer include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. More specifically, the (meth) acrylate described above as a constituent monomer of an acrylic polymer used to form the acrylic resin for the adhesive film 10 can be mentioned as the (meth) acrylate. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylate may be used, or two or more kinds of (meth) acrylates may be used. The constituent monomer of the acrylic polymer is preferably 2-ethylhexyl acrylate. In addition, the proportion of the (meth) acrylate in the entire constituent monomers of the acrylic polymer is preferably 40 mass% or more, and more preferably 60 mass% or more, in order to appropriately exhibit basic characteristics such as adhesiveness with the (meth) acrylate in the pressure-sensitive adhesive layer 22.
The acrylic polymer may contain one or two or more other monomers copolymerizable with the (meth) acrylate ester as a constituent monomer for the purpose of modifying, for example, the cohesive force and heat resistance thereof. Examples of such other monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. More specifically, the other monomer is a copolymerizable monomer as described above as a constituent monomer of an acrylic polymer used for forming the acrylic resin for the adhesive film 10.
The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as a (meth) acrylate ester in order to form a crosslinked structure in the polymer skeleton. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. "(meth) acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately exhibit basic characteristics such as adhesiveness with a (meth) acrylate, the ratio of the polyfunctional monomer in the entire constituent monomers of the acrylic polymer is preferably 40% by mass or less, and preferably 30% by mass or less.
The acrylic polymer may be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method using the dicing tape 20 and/or the dicing tape-attached adhesive film X, the low-molecular-weight component in the pressure-sensitive adhesive layer 22 in the dicing tape 20 and/or the dicing tape-attached adhesive film X is preferably small, and the number average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, and more preferably 20 ten thousand to 300 ten thousand.
The pressure-sensitive adhesive layer 22 and/or the pressure-sensitive adhesive used for forming the same may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of a base polymer such as an acrylic polymer. Examples of the external crosslinking agent for forming a crosslinked structure by reaction with a base polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine crosslinking agents. The content of the external crosslinking agent in the adhesive layer 22 and/or the adhesive for forming the same is preferably 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.
Examples of the radiation-polymerizable monomer component for forming the radiation-curable pressure-sensitive adhesive include trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable pressure-sensitive adhesive include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, and polybutadiene type, and a molecular weight of about 100 to 30000 is preferable. The total content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive is determined within a range that can suitably reduce the adhesive strength of the pressure-sensitive adhesive layer 22 to be formed, and is preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass, based on 100 parts by mass of a base polymer such as an acrylic polymer. As the additive type radiation-curable pressure-sensitive adhesive, for example, one disclosed in Japanese patent application laid-open No. 60-196956 can be used.
Examples of the radiation-curable pressure-sensitive adhesive for the pressure-sensitive adhesive layer 22 include intrinsic type radiation-curable pressure-sensitive adhesives containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at a polymer side chain, a polymer main chain, or a polymer main chain end. Such an internal radiation curable pressure-sensitive adhesive is suitable for suppressing an undesirable change in adhesive properties with time due to the movement of low molecular weight components in the pressure-sensitive adhesive layer 22 to be formed.
The base polymer contained in the internal radiation curable pressure-sensitive adhesive preferably has an acrylic polymer as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be used as a base polymer contained in an additive type radiation curable pressure-sensitive adhesive. Examples of the method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after a raw material monomer containing a monomer having a predetermined functional group (1 st functional group) is copolymerized to obtain an acrylic polymer, a compound having a predetermined functional group (2 nd functional group) capable of reacting with the 1 st functional group to bond and a radiation-polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining the radiation-polymerizability of the carbon-carbon double bond.
Examples of the combination of the 1 st functional group and the 2 nd functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, a hydroxyl group and an isocyanate group, and an isocyanate group and a hydroxyl group, among which a combination of a hydroxyl group and an isocyanate group and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of easiness of reaction follow-up, and further, from the viewpoint of easiness of production or obtaining of an acrylic polymer, it is more preferable that the 1 st functional group on the acrylic polymer side is a hydroxyl group and the 2 nd functional group is an isocyanate group, and examples of the isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as the 2 nd functional group, that is, an isocyanate compound having a radiation-polymerizable unsaturated functional group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl- α -dimethylbenzyl isocyanate.
Examples of the photopolymerization initiator include α -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketones, acylphosphine oxides, and acylphosphonates, examples of the α -ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexylphenylketone, examples of the acetophenone compounds include methoxyacetophenone, 2-dimethoxy-1, 2-diphenylethane-1-one, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1-one, examples of the benzoin compounds include benzoin compounds, 2-diethoxy acetophenone compounds, and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1-one, examples of the benzoin ether compounds include benzoin ether compounds, 2-dichlorobenzoin ether compounds, 2-ethyl-thioketal compounds, 2-isopropyl thiobenzophenone, 2-ethyl thiophenone, and 2-isopropyl phenone, examples of the photopolymerization initiator include 4- (2-methoxy-ethyl) benzophenone, 2-ethyl-1-isopropyl-2-ethyl-thiophenone, 2-ethyl-1-ethyl thiophenone, 2-ethyl thiophenone, and 2-isopropyl phenone, 2-isopropyl-2-ethyl thiobenzophenone, 2-ethyl thiophenone, and 2-ethyl thiobenzophenone, and 5-ethyl thiobenzophenone.
The heat-expandable adhesive in the adhesive layer 22 is an adhesive containing a component that expands and expands when heated. Examples of the component that foams and expands by heating include a foaming agent and thermally expandable microspheres.
Examples of the foaming agent for the heat-expandable adhesive include various inorganic foaming agents and organic foaming agents. Examples of the inorganic blowing agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic blowing agent include chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azobisisobutyronitrile, azodicarbonamide, azo compounds such as barium azodicarboxylate, hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3, 3 '-disulfonyl hydrazide, 4' -oxybis (benzenesulfonyl hydrazide) and allylbis (sulfonyl hydrazide), semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4,4 '-oxybis (benzenesulfonylamino urea), triazole compounds such as 5-morpholinyl-1, 2,3, 4-thiatriazole and N-nitroso compounds such as N, N' -dinitrosopentamethylenetetramine and N, N '-dimethyl-N, N' -dinitrosoterephthalamide.
Examples of the thermally expandable microspheres for a heat-expandable adhesive include microspheres in which a material that is easily vaporized and expanded by heating is enclosed in a case. Examples of the substance which is easily vaporized and expanded by heating include isobutane, propane, and pentane. The thermally expandable microspheres can be produced by enclosing a substance which is easily vaporized by heating and expands in a shell-forming substance by an agglomeration method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal fusion properties or a substance which can be broken by the action of thermal expansion of the encapsulating substance can be used. Examples of such a substance include a vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.
Examples of the non-reduced adhesive force type adhesive in the adhesive layer 22 include pressure-sensitive adhesives. As the pressure-sensitive adhesive, for example, an acrylic adhesive or a rubber adhesive containing an acrylic polymer as a base polymer can be used. In the case where the pressure-sensitive adhesive layer 22 contains an acrylic adhesive as the pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains a monomer unit derived from a (meth) acrylate ester in the largest mass ratio as a monomer unit. Examples of such acrylic polymers include those described above with respect to the radiation curable adhesive.
As the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22, an adhesive in a form in which the above-described radiation-curable adhesive for an adhesive force-reducing adhesive is cured by irradiation with radiation can be used. Such a radiation-curable pressure-sensitive adhesive after curing can exhibit, even when the adhesive force is reduced by radiation irradiation, the adhesive force due to the polymer component depending on the content of the polymer component, and can exhibit the adhesive force that can be used for adhesive holding of an adherend in a predetermined use mode.
In the pressure-sensitive adhesive layer 22 of the present embodiment, one kind of pressure-sensitive adhesive having a non-reduced adhesive strength may be used, or two or more kinds of pressure-sensitive adhesives having a non-reduced adhesive strength may be used. The entire pressure-sensitive adhesive layer 22 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 22 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 22 has a single-layer structure, the entire pressure-sensitive adhesive layer 22 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 22 may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, and the other portion may be formed of an adhesive-force-reducing pressure-sensitive adhesive. In the case where the pressure-sensitive adhesive layer 22 has a laminated structure, all layers forming the laminated structure may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive, and some layers in the laminated structure may be formed of a non-adhesive-force-reducing pressure-sensitive adhesive.
The pressure-sensitive adhesive layer 22 and/or the pressure-sensitive adhesive for forming the same may contain, in addition to the above-described components, a crosslinking accelerator, a tackifier, an antioxidant, a colorant, and the like. Examples of the colorant include pigments and dyes. The colorant may be a compound that is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.
The thickness of the adhesive layer 22 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm. Such a configuration is preferable, for example, in the case where the pressure-sensitive adhesive layer 22 contains a radiation-curable pressure-sensitive adhesive, in terms of obtaining a balance between the adhesive force of the pressure-sensitive adhesive layer 22 before and after radiation curing to the adhesive film 10.
The adhesive film X with a dicing tape having the above-described structure can be manufactured, for example, as follows.
In the production of the adhesive film 10 of the adhesive film X with dicing tape, first, an adhesive composition for forming the adhesive film 10 is prepared, and then the composition is applied to a predetermined separator to form an adhesive composition layer. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a plastic film surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent, and paper. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is heated and dried as necessary, and is subjected to a crosslinking reaction as necessary. The heating temperature is, for example, 70 to 160 ℃, and the heating time is, for example, 1 to 5 minutes. The adhesive film 10 can be produced in the form of a separator in the above manner.
The dicing tape 20 of the adhesive film X with a dicing tape can be produced by providing the adhesive layer 22 on the prepared substrate 21. For example, the resin substrate 21 can be produced by a film-forming method such as a rolling film-forming method, a casting method in an organic solvent, a blow extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. The film and/or the substrate 21 after the film formation is subjected to a predetermined surface treatment as necessary. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing a pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied to the substrate 21 or a predetermined separator to form a pressure-sensitive adhesive composition layer. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is heated and dried as necessary, and is subjected to a crosslinking reaction as necessary. The heating temperature is, for example, 80 to 150 ℃, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the separator, the adhesive layer 22 with the separator is bonded to the substrate 21, and thereafter, the separator is peeled off from the adhesive layer 22. In this way, the dicing tape 20 having a laminated structure of the base material 21 and the pressure-sensitive adhesive layer 22 was produced.
In the production of the adhesive film X with dicing tape, the adhesive film 10 is, for example, pressure-bonded to the pressure-sensitive adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 30 to 50 ℃, preferably 35 to 45 ℃. The bonding pressure (linear pressure) is, for example, 0.1 to 20kgf/cm, preferably 1 to 10 kgf/cm. When the pressure-sensitive adhesive layer 22 contains the radiation-curable pressure-sensitive adhesive as described above, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the substrate 21 side after the bonding. Alternatively, bonding with dicing tapeSuch irradiation with radiation may not be performed during the production of the film X (in this case, the pressure-sensitive adhesive layer 22 may be radiation-cured during the use of the adhesive film X with a dicing tape). When the pressure-sensitive adhesive layer 22 is ultraviolet-curable, the amount of ultraviolet irradiation for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500mJ/cm2Preferably 100 to 300mJ/cm2. As shown in fig. 1, for example, a region (irradiation region R) of the dicing tape-attached adhesive film X to be irradiated as a measure for reducing the adhesive strength of the pressure-sensitive adhesive layer 22 is a region other than the peripheral edge portion of the adhesive film bonding region of the pressure-sensitive adhesive layer 22.
The adhesive film X with dicing tape can be produced as described above. The adhesive film X with a dicing tape may be provided with a separator (not shown) on the adhesive film 10 side so as to cover at least the adhesive film 10. When the size of the adhesive film 10 is smaller than the adhesive layer 22 of the dicing tape 20 and there is a region where the adhesive film 10 is not bonded in the adhesive layer 22, the separator may be provided so as to cover the adhesive film 10 and the adhesive layer 22. The separator is an element for protecting the adhesive film 10 and the pressure-sensitive adhesive layer 22 from being exposed, and is peeled from the adhesive film X with a dicing tape when the film is used.
Fig. 2 to 8 show a method for manufacturing a semiconductor device according to an embodiment of the present invention.
In the present semiconductor device manufacturing method, first, as shown in fig. 2 (a) and 2 (b), the dividing grooves 30a are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements have been already formed on the 1 st surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and the dividing groove 30a having a predetermined depth is formed on the 1 st surface Wa side of the semiconductor wafer W by using a rotary blade such as a dicing apparatus. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically indicated by thick lines in fig. 2 to 4).
Next, as shown in fig. 2 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the 1 st surface Wa of the semiconductor wafer W, and the wafer processing tape T1 is peeled from the semiconductor wafer W.
Next, as shown in fig. 2 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while being held on the wafer processing tape T2 (wafer thinning step). The grinding process can be performed using a grinding apparatus provided with a grinding wheel. In this wafer thinning step, the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed in this embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) for connecting portions of the wafer to be singulated into the plurality of semiconductor chips 31 on the 2 nd surface Wb side. The thickness of the connection portion of the semiconductor wafer 30A, i.e., the distance between the 2 nd surface Wb of the semiconductor wafer 30A and the 2 nd surface Wb-side tip of the dividing groove 30A, is, for example, 1 to 30 μm, preferably 3 to 20 μm.
Next, as shown in fig. 3 (a), the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive film 10 of the adhesive film X with dicing tape. Then, as shown in fig. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 22 in the dicing tape-attached adhesive film X is a radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the base material 21 side after the bonding of the semiconductor wafer 30A to the adhesive film 10, instead of the radiation irradiation described above in the production process of the dicing tape-attached adhesive film X. The irradiation dose is, for example, 50 to 500mJ/cm2Preferably 100 to 300mJ/cm2. The region of the dicing tape-attached adhesive film X to be irradiated (irradiation region R shown in fig. 1) as a measure for reducing the adhesive strength of the pressure-sensitive adhesive layer 22 is, for example, a region other than the peripheral edge portion of the bonding region of the adhesive film 10 in the pressure-sensitive adhesive layer 22.
Next, after the ring frame 41 is attached to the adhesive film 10 of the adhesive film X with dicing tape, the adhesive film X with dicing tape of the semiconductor wafer 30A is fixed to the holder 42 of the expanding apparatus as shown in fig. 4 (a).
Next, as shown in fig. 4 (b), the 1 st expanding step (cooling expanding step) under relatively low temperature conditions is performed to singulate the semiconductor wafer 30A into a plurality of semiconductor chips 31 and cut the adhesive film 10 with the adhesive film X of the dicing tape into the small chip bonding films 11, thereby obtaining the semiconductor chips 31 with the chip bonding films. In this step, the hollow cylindrical jack member 43 (a cross section is not shown) provided in the expanding device is brought into contact with the dicing tape 20 on the lower side of the dicing tape-attached adhesive film X in the drawing and raised, and the dicing tape 20 to which the dicing tape-attached adhesive film X of the semiconductor wafer 30A is bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. The spreading is performed under the condition that a tensile stress of, for example, 15 to 32MPa is generated in the dicing tape 20. The temperature condition in the cooling expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The spreading speed (speed of raising the jack-up member 43) in the cooling spreading step is, for example, 0.1 to 300 mm/sec. The amount of expansion in the cooling expansion step is, for example, 3 to 16 mm.
In this step, the semiconductor wafer 30A is cut at a portion which is thin and is likely to be broken, and is singulated into the semiconductor chips 31. At the same time, in the present step, in the adhesive film 10 which is in close contact with the pressure-sensitive adhesive layer 22 of the spread dicing tape 20, the deformation is suppressed in the regions in which the semiconductor chips 31 are in close contact, while such a deformation suppressing action is not generated at the positions facing the dividing grooves between the semiconductor chips 31, and in this state, the tensile stress generated in the dicing tape 20 acts. As a result, the adhesive film 10 is cut at a position facing the dividing groove between the semiconductor chips 31. After this step, as shown in fig. 4 (c), the jack-up member 43 is lowered, and the expanded state of the dicing tape 20 is released.
Next, as shown in fig. 5 (a) and 5 (b), the 2 nd expansion step is performed under relatively high temperature conditions, and the distance (separation distance) between the semiconductor chips 31 with the die-bonding film is expanded. In this step, the table 44 provided in the spreading device is raised to spread the dicing tape 20 for dicing the die bond film X. The platen 44 applies a negative pressure to the workpiece on the platen face so that the workpiece can be vacuum sucked. The temperature condition in the second expansion step 2 is, for example, 10 ℃ or higher, preferably 15 to 30 ℃. The spreading speed (speed at which the table 44 is raised) in the second spreading step 2 is, for example, 0.1 to 10 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16 mm. The separation distance of the semiconductor chips 31 with the die-bonding film in this step is enlarged to such an extent that the semiconductor chips 31 with the die-bonding film can be appropriately picked up from the dicing tape 20 in a pickup step described later. After the dicing tape 20 is expanded by the raising of the stage 44, the stage 44 sucks the dicing tape 20 by vacuum. Then, while maintaining the suction by the table 44, the table 44 is lowered along with the workpiece as shown in fig. 5 (c). In this embodiment, the periphery of the semiconductor wafer 30A (the portion outside the holding region of the semiconductor chip 31) in the dicing die-bonding film X is heated and shrunk in this state (heat shrinking step). Thereafter, the vacuum suction state by the stage 44 is released. By passing through the heat shrinkage process, the following states are formed in the dicing die-bonding film X: a predetermined degree of tension can be applied to the wafer bonding region which is stretched and temporarily relaxed in the first and second stretching steps, and the above-described separation distance of the semiconductor chips 31 can be fixed even after the vacuum suction state is released.
Next, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 20 including the semiconductor chip 31 with a die bond film via a cleaning liquid such as water as necessary, the semiconductor chip 31 with a die bond film is picked up from the dicing tape 20 as shown in fig. 6 (pickup step). For example, the semiconductor chip 31 with a die bond film to be picked up is lifted up by the pin member 45 of the pickup mechanism on the lower side of the dicing tape 20 in the drawing, and is then sucked and held by the suction jig 46 after being pushed up by the dicing tape 20. In the picking-up step, the pin member 45 is pushed up at a speed of, for example, 1 to 100 mm/sec and the pin member 45 is pushed up at a height of, for example, 50 to 3000 μm.
Next, as shown in fig. 7 (a) and 7 (b), the semiconductor chip 31 with the die-bonding film is temporarily fixed to the mounting substrate 51. The temporary fixation is performed so that the semiconductor chip 31' and the like on the mounting substrate 51 are embedded in the die-bonding film 11 with the semiconductor chip 31. Examples of the mounting substrate 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate. The semiconductor chip 31' is fixed to the mounting substrate 51 via an adhesive layer 52. The electrode pad (not shown) of the semiconductor chip 31' and a terminal portion (not shown) of the mounting board 51 are electrically connected by a bonding wire 53. As the bonding wire 53, for example, a gold wire, an aluminum wire, or a copper wire can be used. In this step, the entire semiconductor chip 31' subjected to the wire bonding mounting in this manner and the bonding wire 53 connected thereto are embedded in the die bonding film 11 with the semiconductor chip 31. In this step, the die-bonding film 11 may be heated and softened in order to form a state in which the semiconductor chip 31' and the bonding wire 53 are easily embedded in the die-bonding film 11. The heating temperature is a temperature at which the die-bonding film 11 does not reach a completely thermally cured state, and is, for example, 80 to 140 ℃.
Next, as shown in fig. 7 c, the die bond film 11 is cured by heating (thermosetting step). In this step, the heating temperature is, for example, 100 to 200 ℃ and the heating time is, for example, 0.5 to 10 hours. Through this step, an adhesive layer obtained by thermosetting the die-bonding film 11 is formed. The adhesive layer embeds semiconductor chip 31' (1 st semiconductor chip) wire-bonded to mounting substrate 51 together with the entirety of bonding wire 53 connected thereto, and bonds semiconductor chip 31 to mounting substrate 51.
Next, as shown in fig. 8 a, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the mounting board 51 are electrically connected by the bonding wire 53 (wire bonding step). The connection lines between the electrode pads of the semiconductor chip 31 and the bonding wires 53 and the connection lines between the terminal portions of the mounting board 51 and the bonding wires 53 are formed by ultrasonic bonding with heating. The wire heating temperature in wire bonding is, for example, 80 to 250 ℃, and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed prior to the thermosetting step.
Next, as shown in fig. 8 b, a sealing resin 54 for sealing the semiconductor chip 31 and the like on the mounting substrate 51 is formed (sealing step). In this step, the sealing resin 54 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 54, for example, an epoxy resin is cited. In this step, the heating temperature for forming the sealing resin 54 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 54 is not sufficiently performed in this step, a post-curing step for completely curing the sealing resin 54 by further heat treatment is performed after this step. In the post-curing step, the heating temperature is, for example, 165 to 185 ℃, and the heating time is, for example, 0.5 to 8 hours. Even when the die bond film 11 is not completely heat-cured in the above-described step (c) with reference to fig. 7, the die bond film 11 can be completely heat-cured together with the sealing resin 54 in the sealing step and the post-curing step.
By operating as above, a semiconductor device in which a plurality of semiconductor chips are mounted in a plurality of stages can be manufactured. In the present embodiment, the entire semiconductor chip 31' and the bonding wire 53 connected thereto are embedded in the adhesive layer formed by curing the die bonding film 11. In contrast, the semiconductor chip 31 'and a part of the bonding wire 53 connected thereto on the side of the semiconductor chip 31' may be embedded in the adhesive layer formed by curing the die bonding film 11. In addition, in the present embodiment, a flip-chip mounted semiconductor chip 31 'may be used instead of the wire-bond mounted semiconductor chip 31', for example, as shown in fig. 9. The semiconductor chip 31 'shown in fig. 9 is electrically connected to the mounting board 51 via the bump 55, and the underfill 56 is filled between the semiconductor chip 31' and the mounting board 51 and thermally cured. In the semiconductor device shown in fig. 9, the adhesive layer formed by thermosetting the die-bonding film 11 embeds the semiconductor chip 31' (1 st semiconductor chip) flip-chip mounted on the mounting substrate 51 and bonds the semiconductor chip 31 (2 nd semiconductor chip) to the mounting substrate 51.
Fig. 10 and 11 show a part of the steps in another embodiment of the method for manufacturing a semiconductor device according to the present invention. In the present embodiment, first, as shown in fig. 10 (a) and 10 (b), the semiconductor chip 31 with the die bonding film is temporarily fixed to the semiconductor chip 31' mounted on the mounting board 51 by wire bonding. The semiconductor chip 31' is fixed to the mounting substrate 51 via an adhesive layer 52. The electrode pad (not shown) of the semiconductor chip 31' and a terminal portion (not shown) of the mounting board 51 are electrically connected by a bonding wire 53. In this step, the die bond film 11 covers the bonding wire connection portion of the semiconductor chip 31' mounted by wire bonding in this manner, and a part of the bonding wire 53 is embedded in the die bond film 11. In this step, the die-bonding film 11 may be heated and softened in order to form a state in which the bonding wires 53 are easily embedded in the die-bonding film 11. The heating temperature is a temperature at which the die-bonding film 11 does not reach a completely thermally cured state, and is, for example, 80 to 140 ℃.
Next, as shown in fig. 10 c, the die bond film 11 is cured by heating (heat curing step). In this step, the heating temperature is, for example, 100 to 200 ℃ and the heating time is, for example, 0.5 to 10 hours. Through this step, an adhesive layer obtained by thermosetting the die-bonding film 11 is formed. The adhesive layer covers a bonding wire connection portion of the semiconductor chip 31 'that is wire-bonded to the mounting substrate 51, embeds a portion of the bonding wire 53, and bonds the semiconductor chip 31 (2 nd semiconductor chip) to the semiconductor chip 31' (1 st semiconductor chip).
Next, as shown in fig. 11 a, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the mounting board 51 are electrically connected by the bonding wire 53 (wire bonding step). The connection lines between the electrode pads of the semiconductor chip 31 and the bonding wires 53 and the connection lines between the terminal portions of the mounting board 51 and the bonding wires 53 are formed by ultrasonic bonding with heating. The wire heating temperature in wire bonding is, for example, 80 to 250 ℃, and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed prior to the thermosetting step in the present embodiment.
Next, as shown in fig. 11 (b), a sealing resin 54 for sealing the semiconductor chips 31 and 31' and the bonding wires 53 on the mounting substrate 51 is formed (sealing step). In this step, the heating temperature for forming the sealing resin 54 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 54 is not sufficiently performed in this step, a post-curing step for completely curing the sealing resin 54 by further heat treatment is performed after this step. In the post-curing step, the heating temperature is, for example, 165 to 185 ℃, and the heating time is, for example, 0.5 to 8 hours. Even when the die bond film 11 is not completely heat-cured in the above-described step (c) with reference to fig. 10, the die bond film 11 can be completely heat-cured together with the sealing resin 54 in the sealing step and the post-curing step.
A semiconductor device in which a plurality of semiconductor chips are mounted in a plurality of stages can be manufactured by operating as described above.
In the method for manufacturing a semiconductor device according to the present invention, the wafer thinning step shown in fig. 12 may be performed instead of the wafer thinning step described above with reference to fig. 2 (d). After the above-described process with reference to fig. 2 (c), in the wafer thinning step shown in fig. 12, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2, and the semiconductor wafer divided bodies 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 are formed. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the 2 nd surface Wb side (the 1 st method) may be adopted, or the following method may be adopted: and a method (method 2) of grinding the wafer from the 2 nd surface Wb side until the wafer reaches the dividing grooves 30a, and then generating cracks between the dividing grooves 30a and the 2 nd surface Wb by a pressing force of the rotating grindstone against the wafer, thereby forming semiconductor wafer divided bodies 30B. The depth of the dividing groove 30a formed as described above with reference to fig. 2 (a) and 2 (b) from the 1 st surface Wa is determined as appropriate according to the method used. Fig. 12 schematically shows a dividing groove 30a by the 1 st method or a dividing groove 30a by the 2 nd method and a crack connected thereto by a thick line. The semiconductor wafer divided body 30B thus produced may be bonded to the adhesive film X with dicing tape instead of the semiconductor wafer 30A, and then the above-described steps with reference to fig. 3 to 6 may be performed.
Fig. 13 (a) and 13 (B) show a first expanding step (cooling expanding step) performed after the semiconductor wafer segment 30B is bonded to the adhesive film X with dicing tape. In this step, the hollow cylindrical jacking member 43 (a cross section is not shown) provided in the expanding device is brought into contact with the dicing tape 20 at the lower side of the dicing tape-attached adhesive film X in the drawing and ascends, and expands the dicing tape 20 to which the dicing tape-attached adhesive film X of the semiconductor wafer segment 30B is bonded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer segment 30B. The spreading is performed under the condition that a tensile stress of, for example, 1 to 100MPa is generated in the dicing tape 20. The temperature conditions in this step are, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expanding speed (speed of raising the jack-up member 43) in this step is, for example, 1 to 500 mm/sec. The amount of expansion in this step is, for example, 50 to 200 mm. By the cooling and spreading step, the adhesive film 10 of the adhesive film X with dicing tape is cut into the small die bond films 11, and the semiconductor chip 31 with die bond films is obtained. Specifically, in this step, in the adhesive film 10 which is in close contact with the pressure-sensitive adhesive layer 22 of the expanded dicing tape 20, the deformation is suppressed in the regions of the semiconductor wafer divided bodies 30B in which the semiconductor chips 31 are in close contact, while such a deformation suppressing action is not generated at the positions facing the dividing grooves 30a between the semiconductor chips 31, and in this state, the tensile stress generated in the dicing tape 20 acts. As a result, the adhesive film 10 is cut at a position facing the dividing groove 30a between the semiconductor chips 31. The semiconductor chip 31 with a die bond film obtained in this way is subjected to the above-described picking-up step with reference to fig. 6, and then subjected to a mounting step in a semiconductor device manufacturing process.
In the method for manufacturing a semiconductor device according to the present invention, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the adhesive film X with dicing tape, the semiconductor wafer 30C produced as follows may be bonded to the adhesive film X with dicing tape.
In the fabrication of the semiconductor wafer 30C, first, as shown in fig. 14 (a) and 14 (b), modified regions 30b are formed in the semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been already mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements have been already formed on the 1 st surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light whose focal point is aligned with the inside of the wafer from the side opposite to the wafer processing tape T3 along the pre-dividing line thereof in a state where the semiconductor wafer W is held on the wafer processing tape T3, and the modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified regions 30b on the preliminary dividing lines in the semiconductor wafer by laser irradiation is described in detail in, for example, japanese patent application laid-open No. 2002-192370, and the laser irradiation conditions in the present embodiment can be appropriately adjusted within the following ranges, for example.
< laser irradiation conditions >
(A) Laser
Figure BDA0002323490200000351
Figure BDA0002323490200000361
(C) The moving speed of the mounting table for mounting the semiconductor substrate is below 280 mm/s
Next, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while being held on the wafer processing tape T3, whereby a semiconductor wafer 30C capable of being singulated into a plurality of semiconductor chips 31 is formed as shown in fig. 14 (C) (wafer thinning step). Instead of the semiconductor wafer 30A, the semiconductor wafer 30C produced as described above may be bonded to the dicing tape-attached adhesive film X, and then the above-described steps may be performed with reference to fig. 3 to 6.
Fig. 15 (a) and 15 (b) show a first expanding step (cooling expanding step) performed after the semiconductor wafer 30C is bonded to the dicing tape-attached adhesive film X. In this step, the hollow cylindrical jack member 43 (a cross section not shown) provided in the expanding device is brought into contact with the dicing tape 20 on the lower side of the dicing tape-attached adhesive film X in the drawing and raised, and the dicing tape 20 to which the dicing tape-attached adhesive film X of the semiconductor wafer 30C is bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the conductor wafer 30C. The spreading is performed under the condition that a tensile stress of, for example, 1 to 100MPa is generated in the dicing tape 20. The temperature conditions in this step are, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expanding speed (speed of raising the jack-up member 43) in this step is, for example, 1 to 500 mm/sec. The amount of expansion in this step is, for example, 50 to 200 mm. By the cooling and spreading step, the adhesive film 10 of the adhesive film X with dicing tape is cut into the small die bond films 11, and the semiconductor chip 31 with die bond films is obtained. Specifically, in this step, cracks are formed in the weakened modified region 30b in the semiconductor wafer 30C, and singulation into the semiconductor chips 31 occurs. At the same time, in this step, in the adhesive film 10 in close contact with the pressure-sensitive adhesive layer 22 of the expanded dicing tape 20, the deformation is suppressed in the regions of the semiconductor wafer 30C in close contact with the semiconductor chips 31, while such a deformation suppressing action is not generated at the position facing the crack formation position of the wafer, and in this state, the tensile stress generated in the dicing tape 20 acts. As a result, the adhesive film 10 is cut at a position facing the crack formation position between the semiconductor chips 31. The semiconductor chip 31 with a die bond film obtained in this way is subjected to the above-described picking-up step with reference to fig. 6, and then subjected to a mounting step in a semiconductor device manufacturing process.
The present inventors have found that, for example, in the adhesive film 10 of the adhesive film X with a dicing tape usable in the semiconductor device manufacturing process described above, even in the case where the adhesive film 10 is thick, the adhesive film 10 is suitable for causing a cleavage at a predetermined cleavage position in the expanding step. For example, as shown in examples and comparative examples described later.
In the conventional adhesive film, it is considered that the breaking strength of the film is excessively high because a part of a predetermined breaking position is not broken in the stretching step. In the conventional adhesive film, it is considered that the reason why the cleavage cracks occur at positions other than the planned cleavage positions in the propagation step is as follows: since the elasticity of the film is too strong, the stress for cleaving in the stretching step is not appropriately transmitted to the intended cleaving position of the film, and brittle fracture may occur at a position other than the intended cleaving position. On the other hand, loss tangent is an index indicating that viscosity is stronger as the loss tangent is larger, and is a ratio of viscosity to elasticity of a material, which relates to mechanical properties of the material. The above-described configuration in which the loss tangent of the adhesive film 10 has a peak in the range of 20 to 60 ℃ on the high temperature side and also has a peak in the range of-20 to 20 ℃ on the low temperature side is suitable for achieving a balance between the elasticity and the viscosity of the adhesive film 10 under low temperature conditions of, for example, 0 ℃ or less in the stretching step for cutting and for achieving a reduction in the breaking strength, and therefore, is suitable for achieving good cutting in the stretching step. Specifically, the above-described configuration relating to the 1 st and 2 nd peaks in the adhesive film 10 is considered suitable for suppressing the occurrence of brittle fracture (fracture crack) at a position other than the planned fracture position in the fracture propagation step and appropriately transmitting the stress for fracture to the planned fracture position of the adhesive film 10, and for suppressing the fracture strength and facilitating the occurrence of fracture at the planned fracture position.
As described above, the adhesive film 10 of the adhesive film X with dicing tape is suitable for achieving good cutting in the cutting expanding step.
As described above, the value of the 2 nd peak of the adhesive film 10 of the adhesive film X with dicing tape is preferably 2 or more, more preferably 2.2 or more, and still more preferably 2.4 or more. Such a configuration contributes to obtaining a balance between the elasticity and the viscosity of the adhesive film 10 under a predetermined low temperature condition in which the spreading step for cutting is performed, and to reducing the breaking strength thereof. This configuration is preferable in terms of ensuring the adhesion of the adhesive film 10 to a work such as a semiconductor wafer when the work is bonded to the adhesive film 10.
As described above, the adhesive film 10 preferably contains a thermosetting resin, and more preferably contains an epoxy resin and/or a phenol resin. The softening temperature of the thermosetting resin is preferably 70 ℃ or higher, more preferably 75 ℃ or higher, and still more preferably 80 ℃ or higher, as described above. When the adhesive film 10 contains a thermosetting resin having a softening temperature of preferably 70 ℃ or higher, more preferably 75 ℃ or higher, and still more preferably 80 ℃ or higher, the content of the thermosetting resin in the adhesive film 10 is preferably 5 to 25 mass%, more preferably 6 to 20 mass%, more preferably 7 to 18 mass%, and still more preferably 8 to 16 mass% as described above, for example. As described above, the adhesive film 10 preferably contains an acrylic resin having a glass transition temperature of-40 to 10 ℃. The glass transition temperature of the acrylic resin is preferably-35 to 5 ℃. With these configurations, the above-described configurations relating to the 1 st and 2 nd peaks in the adhesive film 10 can be easily realized.
The thickness of the adhesive film 10 is preferably 40 μm or more, more preferably 60 μm or more, and still more preferably 80 μm or more, as described above. Such a configuration is preferable in that the adhesive film 10 is used as an adhesive film for forming an adhesive layer (a thick adhesive film for embedding a semiconductor chip) for embedding the semiconductor chip 31' (1 st semiconductor chip) wire-bonded to the mounting substrate 51 and embedding the semiconductor chip 31 (2 nd semiconductor chip) on the mounting substrate 51 together with the whole or a part of the bonding wire 53 connected to the chip. Alternatively, this configuration relating to the thickness of the adhesive film 10 is preferable in that the adhesive film 10 is used as an adhesive film for forming an adhesive layer (a thick adhesive film for bonding a semiconductor chip accompanying embedding of a bonding wire portion) for covering a bonding wire connection portion of the semiconductor chip 31 'mounted on the mounting substrate 51 by wire bonding, embedding a part of the bonding wire 53, and bonding the semiconductor chip 31 to the semiconductor chip 31'. Alternatively, this configuration relating to the thickness of the adhesive film 10 is suitable in that the adhesive film 10 is used as an adhesive film for forming an adhesive layer (a thick adhesive film for embedding a chip) for embedding the semiconductor chip 31' flip-chip mounted on the mounting substrate 51 and bonding the semiconductor chip 31 to the mounting substrate 51.
On the other hand, as described above, the thickness of the adhesive film 10 is preferably 150 μm or less, more preferably 140 μm or less, more preferably 130 μm or less, and more preferably 120 μm or less. Such a configuration is suitable for avoiding an excessive increase in breaking strength of the adhesive film 10.
Examples
[ example 1]
Production of adhesive film
Mixing acrylic resin A115 parts by mass of an epoxy resin (trade name: EPPN-501 HY; softening temperature: 60 ℃, manufactured by Nippon ChemteX Corporation), 15 parts by mass of a phenol resin F (trade name: TEISAN RESIN SG-280; weight average molecular weight: 90 ten thousand; glass transition temperature Tg: 29 ℃ C.), and 29 parts by mass of a Nagase ChemteX Corporation)116 parts by mass (trade name "HF-1M", softening temperature 84 ℃ C., manufactured by Mitsuka chemical Co., Ltd.) and 40 parts by mass of an inorganic filler (trade name "SE-2050 MC", silica particles having an average particle diameter of 0.5 μ M, manufactured by Amatex Corporation) were added to methyl ethyl ketone and mixed to obtain an adhesive composition. Then, use the applicator in having implementedThe adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness: 38 μm) on the silicone release-treated surface to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 130 ℃ for 2 minutes to prepare an adhesive film having a thickness of 40 μm on a PET separator. Then, the 3 adhesive films thus produced were laminated using a roll laminator to produce an adhesive film (thickness 120 μm) of example 1. In this bonding, the bonding speed was set to 10 mm/sec, the temperature condition was set to 60 ℃ and the pressure condition was set to 0.15 MPa. The composition of the adhesive film (DAF) in example 1 and in each of examples and comparative examples described later is shown in table 1 (in table 1, the unit of each numerical value indicating the composition of the adhesive film (DAF) is relative "part by mass" in the composition).
Production of cutting belt
In a reaction vessel equipped with a condenser, a nitrogen inlet tube, a thermometer and a stirring device, a mixture comprising 120 parts by mass of 2-ethylhexyl acrylate, 17 parts by mass of 2-hydroxyethyl acrylate, 0.4 part by mass of benzoyl peroxide as a polymerization initiator and 80 parts by mass of toluene as a polymerization solvent was stirred (polymerization reaction) at 60 ℃ for 10 hours under a nitrogen atmosphere. Thus, an acrylic-containing polymer P was obtained1The polymer solution of (1). Then, the acrylic acid-containing polymer P is added1The mixture of the polymer solution (2-methacryloyloxyethyl isocyanate (MOI)) and dibutyltin dilaurate as an addition reaction catalyst was stirred at 50 ℃ for 60 hours under an air atmosphere (addition reaction). In the reaction solution, the amount of MOI added is based on 100 parts by mass of the acrylic polymer P1Is 1.4 parts by mass, and the compounding amount of dibutyltin dilaurate to 100 parts by mass of the acrylic polymer P1Is 0.1 part by mass. The addition reaction gives an acrylic polymer P having a methacrylate group in a side chain2The polymer solution of (1). Next, the polymer solution was added with 100 parts by mass of the acrylic polymer P21.1 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh corporation) and 3 parts by mass of a polyisocyanate compoundParts of a photopolymerization initiator (trade name "IRGACURE 184", manufactured by BASF) were mixed, and the mixture was diluted with toluene so that the viscosity of the mixture at room temperature became 500mPa · s to obtain an adhesive composition. Next, an adhesive composition was applied using an applicator to the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 120 ℃ for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET separator. Subsequently, a substrate (trade name "funclean NRB # 125", thickness 125 μm, manufactured by gun Limited) made of ethylene-vinyl acetate copolymer (EVA) was laminated on the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. The dicing tape was produced in the above manner.
Production of adhesive film with dicing tape
The adhesive film (DAF) of example 1 with PET spacer was punched out into a disc shape having a diameter of 330 mm. Next, after the PET separator was peeled from the adhesive film and the PET separator was peeled from the dicing tape, the adhesive layer exposed in the dicing tape was bonded to the surface of the adhesive film exposed by peeling of the PET separator using a roll laminator. In this bonding, the bonding speed was set to 10 mm/sec, the temperature condition was set to 25 ℃ and the pressure condition was set to 0.15 MPa. Next, the dicing tape bonded to the adhesive film in this manner was punched into a disk shape having a diameter of 390mm so that the center of the dicing tape coincides with the center of the adhesive film. Next, the adhesive layer in the dicing tape was irradiated with ultraviolet light from the EVA base material side. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative quantity of light irradiated was set to 300mJ/cm2. In the same manner as above, the dicing tape-attached adhesive film of example 1 having a laminated structure including the dicing tape and the adhesive film was produced.
[ example 2 ]
Instead of 16 parts by mass of the phenolic resin F1Using 8 parts by mass of a phenol resin F1And a phenolic resin F2(trade name "LVR 8210-DL", softening temperature 69 ℃, Ronghua chemical industry Co., Ltd.)Manufactured by co.) 8 parts by mass, an adhesive film (thickness: 120 μm) of example 2 was produced in the same manner as the adhesive film of example 1. An adhesive film with a dicing tape according to example 2 was produced in the same manner as the adhesive film with a dicing tape according to example 1, except that the adhesive film according to example 2 was used instead of the adhesive film according to example 1.
[ example 3 ]
Instead of 16 parts by mass of the phenolic resin F1Using a phenolic resin F2An adhesive film (thickness: 120 μm) of example 3 was produced in the same manner as the adhesive film of example 1 except that 16 parts by mass of the adhesive film (trade name: LVR8210-DL, softening temperature: 69 ℃ C., manufactured by Dorkish chemical industries, Ltd.) was used. An adhesive film with a dicing tape according to example 3 was produced in the same manner as the adhesive film with a dicing tape according to example 1, except that the adhesive film according to example 3 was used instead of the adhesive film according to example 1.
[ comparative example 1]
Instead of 15 parts by mass of the acrylic resin A1Using an acrylic resin A2An adhesive film (thickness: 120 μm) of comparative example 1 was produced in the same manner as the adhesive film of example 1 except that 15 parts by mass of the adhesive film (trade name: TEISAN RESIN SG-70L, glass transition temperature-15 ℃, weight average molecular weight: 90 ten thousand, manufactured by Nagase ChemteX Corporation) was used. An adhesive film with a dicing tape according to comparative example 1 was produced in the same manner as the adhesive film with a dicing tape according to example 1, except that the adhesive film according to comparative example 1 was used instead of the adhesive film according to example 1.
[ comparative example 2 ]
Instead of 15 parts by mass of the acrylic resin A1Using an acrylic resin A218 parts by mass of an epoxy resin (trade name: TEISAN RESIN SG-70L, manufactured by Nagase ChemteX Corporation) in an amount of 28 parts by mass instead of 29 parts by mass, and a phenol resin F2(trade name "LVR 8210-DL", Royal chemical engineering)Manufactured by Kogyo Co., Ltd.) 14 parts by mass in place of 16 parts by mass of the phenol resin F1Otherwise, an adhesive film (thickness: 120 μm) of comparative example 2 was produced in the same manner as the adhesive film of example 1. An adhesive film with a dicing tape according to comparative example 2 was produced in the same manner as the adhesive film with a dicing tape according to example 1, except that the adhesive film according to comparative example 2 was used instead of the adhesive film according to example 1.
[ comparative example 3 ]
In place of the acrylic resin A115 parts by mass of an acrylic resin A3An adhesive film (thickness: 120 μm) of comparative example 3 was produced in the same manner as the adhesive film of example 1 except that 15 parts by mass of (trade name: TEISAN RESIN SG-708-6, glass transition temperature Tg: 4 ℃, weight average molecular weight: 70 ten thousand, manufactured by Nagase ChemteX Corporation) was used. An adhesive film with a dicing tape according to comparative example 3 was produced in the same manner as the adhesive film with a dicing tape according to example 1, except that the adhesive film according to comparative example 3 was used instead of the adhesive film according to example 1.
[ comparative example 4 ]
Instead of 15 parts by mass of the acrylic resin A1Using an acrylic resin A315 parts by mass of (trade name "TEISAN RESIN SG-708-6", manufactured by Nagase ChemteX Corporation), and phenol resin F2(trade name "LVR 8210-DL", manufactured by Royal chemical industries Co., Ltd.) 16 parts by mass in place of 16 parts by mass of the phenol resin F1Otherwise, an adhesive film (thickness: 120 μm) of comparative example 4 was produced in the same manner as the adhesive film of example 1. An adhesive film with a dicing tape according to comparative example 4 was produced in the same manner as the adhesive film with a dicing tape according to example 1, except that the adhesive film according to comparative example 4 was used instead of the adhesive film according to example 1.
Dynamic viscoelasticity measurement
Each of the adhesive films of examples 1 to 3 and comparative examples 1 to 4 was subjected to a dynamic viscoelasticity measurement apparatus (trade name: RSA-III, manufactured by TA Instrument Co., Ltd.)In this measurement, the temperature dependence of the loss tangent tan δ (═ loss elastic modulus E "/storage modulus E') of the adhesive film was examined from such a dynamic viscoelasticity measurement with the measurement mode set to the tensile mode, the initial inter-chuck distance set to 22.5mm, the measurement temperature range set to, for example, from-30 ℃ to 100 ℃, the temperature rise rate set to, for example, 10 ℃/min, and the frequency set to, for example, 1 Hz., and the graphs of the values of the loss tangent tan δ in the range of-20 to 60 ℃ with respect to the adhesive films of examples 1 to 3 and comparative examples 1 to 4 are shown in fig. 16 (example 1), fig. 17 (example 2), fig. 18 (example 3), fig. 19 (comparative example 1), fig. 20 (comparative example 2), fig. 21 (comparative example 3), and fig. 22 (comparative example 4), the graph of the logarithmic peak temperature of each of the logarithmic tangent tan δ in the range of-20 ℃ is shown in fig. 18, the graph of the vertical axis of each of the logarithmic peak temperature P of fig. 1 to 20 (fig. 16-20 ℃ is shown in fig. 1-20 ℃ graph1And the 2 nd peak top P in the range of 20 to 60 DEG C2Is remarkable. Table 1 shows the temperature at which the loss tangent of each adhesive film of examples 1 to 3 and comparative examples 1 to 4 shows the peak top. The value of the 2 nd peak, which is significant in the relatively high temperature region, is also shown in table 1.
Evaluation of adhesive film cuttability and wafer adhesiveness
Using the above-described adhesive films with dicing tapes of examples and comparative examples, the following bonding step, 1 st stretching step for cutting (cooling stretching step), and 2 nd stretching step for separation were performed.
In the bonding step, a predetermined semiconductor wafer separator held on a wafer processing tape (product name "UB-3083D", manufactured by ritonan electric corporation) is bonded to the adhesive film of the adhesive film with a dicing tape, and then the wafer processing tape is peeled from the semiconductor wafer separator. In the bonding, a laminator was used, and the bonding speed was 10 mm/sec, the temperature condition was 70 ℃ and the pressure condition was 0.15 MPa. The semiconductor wafer division body is prepared by forming as follows.
First, a bare wafer (12 inches in diameter and 780 μm in thickness, manufactured by tokyo chemical Corporation) held together with a ring frame in a wafer processing tape (trade name "V12S-R2-P", manufactured by hitong electric Corporation) was subjected to a dicing process using a dicing apparatus (trade name "DFD 6361", manufactured by DISCO Corporation) from one surface side thereof to form a dicing groove (a lattice shape having a width of 25 μm, a depth of 50 μm and a division of 10mm × mm) with a rotary blade, then the wafer processing tape (trade name "UB-3083D", manufactured by hitong electric Corporation) was bonded to the dicing groove forming surface, the wafer processing tape (trade name "V12S-R2-P") was peeled from the wafer, and then a back surface grinding apparatus (trade name "DGP 8760", manufactured by DISCO Corporation) was used to thin the wafer by a dry grinding apparatus (manufactured by a dry grinding apparatus) using a semiconductor wafer grinding apparatus having a thickness of 40 mm or more, and a semiconductor wafer was subjected to a thinning process using a wafer finishing apparatus (×) holding a semiconductor wafer without a dicing tape).
In the bonding step, the semiconductor wafer divided bodies could not be bonded to the adhesive film with dicing tape of comparative example 1 even if sufficient adhesive force was obtained. Therefore, the 1 st and 2 nd spreading steps using the adhesive film with dicing tape of comparative example 1 were not performed. Regarding the wafer adhesiveness of the adhesive film, a case where the adhesive film having a sufficient adhesive force and the dicing tape-attached adhesive film can be bonded to the semiconductor wafer diced body was evaluated as good, and a case where the adhesive film does not have the above-described adhesion force was evaluated as poor. The evaluation results are shown in table 1. The results of these evaluations are set forth in table 1.
The 1 st expansion step (cooling expansion step) was performed using a Die-separating device (trade name "Die separator dds 2300", manufactured by DISCO Corporation) using the 1 st expansion unit. Specifically, first, a ring frame made of SUS (manufactured by DISCO Corporation) having a diameter of 12 inches was attached to the dicing tape adhesive layer in the above-described adhesive film with a dicing tape having semiconductor wafer divided bodies at room temperature. Next, the adhesive film with dicing tape is mounted in an apparatus, and the dicing tape of the adhesive film with dicing tape having semiconductor wafer divided bodies is expanded by the 1 st expanding unit of the apparatus. In the cooling expansion process, the temperature is-15 ℃, the expansion speed is 300 mm/s, and the expansion amount is 14 mm.
The 2 nd expansion step was carried out by using a mold Separator (trade name "Die Separator DDS 2300", manufactured by disco corporation) and a 2 nd expansion unit thereof. In this step, first, the adhesive film with a dicing tape and/or the dicing tape having a workpiece, which has passed through the 1 st expanding step, is lifted and expanded by the lifting of the stage capable of vacuum-sucking the dicing tape with the workpiece by the 2 nd expanding unit of the same apparatus. In this expansion, the temperature was 23 ℃, the expansion rate was 1 mm/sec, and the expansion amount was 7 mm. In this step, the dicing tape expanded by the raising of the table is then vacuum-sucked by the table, and the table is lowered together with the workpiece while the suction by the table is maintained. Then, a heat shrinkage treatment (heat shrinkage) is performed on the peripheral edge portion of the dicing tape on the outer side of the workpiece bonding region. In this treatment, the temperature of hot air for heating was 220 ℃, the air volume thereof was 40L/min, the heating distance (distance from the hot air outlet to the object to be heated) was 20mm, and the rotation speed of the stage (stage) for holding the dicing tape with the workpiece was 5 °/sec.
With respect to the cuttability of the adhesive film, after the above-described process using the adhesive film with a dicing tape, it was evaluated that the case where the cutting occurred in 90% or more of the entire planned cutting line was good, and the case where it was not was evaluated as bad. The evaluation results are shown in table 1.
The adhesive films of examples 1 to 3 can achieve good cleaving in the spreading step using the adhesive film with dicing tape for obtaining the semiconductor chip with adhesive film.
[ Table 1]
Figure BDA0002323490200000461

Claims (11)

1. An adhesive film, wherein the loss tangent has a 1 st peak in a range of-20 to 20 ℃ and a 2 nd peak in a range of 20 to 60 ℃.
2. The adhesive film according to claim 1, wherein the value of the 2 nd peak is 2 or more.
3. An adhesive film according to claim 1 or 2, which contains a thermosetting resin having a softening temperature of 70 ℃ or higher.
4. An adhesive film according to any one of claims 1 to 3, which contains an epoxy resin and/or a phenol resin.
5. An adhesive film according to any one of claims 1 to 4, which comprises an acrylic resin having a glass transition temperature of-40 to 10 ℃.
6. The adhesive film according to any one of claims 1 to 5, which has a thickness of 40 to 150 μm.
7. The use of the adhesive film according to any one of claims 1 to 6 for forming an adhesive layer, wherein the adhesive layer embeds a 1 st semiconductor chip, which is wire-bonded to a mounting board, together with all or a part of a bonding wire connected to the 1 st semiconductor chip, and bonds a 2 nd semiconductor chip to the mounting board.
8. An adhesive film according to any one of claims 1 to 6, wherein the adhesive layer covers a bonding wire connection portion of a 1 st semiconductor chip that is wire-bonded to a mounting substrate, and embeds a part of the bonding wire, and bonds a 2 nd semiconductor chip to the 1 st semiconductor chip.
9. Use of the adhesive film according to any one of claims 1 to 6 for forming an adhesive layer, wherein the adhesive layer embeds a 1 st semiconductor chip flip-chip mounted on a mounting substrate and bonds a 2 nd semiconductor chip to the mounting substrate.
10. An adhesive film with a dicing tape, comprising:
a dicing tape having a laminated structure including a substrate and an adhesive layer; and
the adhesive film according to any one of claims 1 to 9, which is in peelable contact with the pressure-sensitive adhesive layer in the dicing tape.
11. A method of manufacturing a semiconductor device, comprising:
a first step of bonding a semiconductor wafer which can be singulated into a plurality of semiconductor chips or a semiconductor wafer divided body including a plurality of semiconductor chips to the adhesive film with a dicing tape according to claim 10; and
and a 2 nd step of spreading the dicing tape in the adhesive film with a dicing tape to thereby cut the adhesive film and obtain a semiconductor chip with an adhesive film.
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