CN111748290A

CN111748290A - Dicing tape with adhesive film

Info

Publication number: CN111748290A
Application number: CN202010218433.XA
Authority: CN
Inventors: 大西谦司; 宍户雄一郎; 木村雄大; 杉村敏正; 福井章洋
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2019-03-26
Filing date: 2020-03-25
Publication date: 2020-10-09
Anticipated expiration: 2040-03-25
Also published as: TW202039726A; JP2020161642A; KR20200115226A; TWI825285B; JP7289688B2; CN111748290B

Abstract

Providing cutting with adhesive filmThe tape is suitable for satisfactorily cutting the adhesive film on the Dicing Tape (DT) in the expanding step using the dicing tape with the adhesive film for obtaining the semiconductor chip with the adhesive film, and is suitable for suppressing the semiconductor chip with the adhesive film after cutting from floating from the DT and realizing satisfactory pickup in the pickup step. A dicing tape (X) with an adhesive film is provided with a dicing tape (10) and an adhesive film (20). The adhesive film (20) is releasably adhered to the adhesive layer (12) of the dicing tape (10). Relative to a temperature of 300mJ/cm at 22 DEG C²The peel adhesion between the pressure-sensitive adhesive layer (12) and the adhesive film (20) of the test piece irradiated with ultraviolet ray of (1) is 300mJ/cm at 60 DEG C²The ratio of the peel adhesion between the adhesive layer (12) and the adhesive film (20) of the test piece irradiated with ultraviolet light is 0.8 to 2.

Description

Dicing tape with adhesive film

Technical Field

The present invention relates to a dicing tape with an adhesive film that can be used in a process of manufacturing a semiconductor device.

Background

In the manufacturing process of a semiconductor device, a dicing tape with an adhesive film is sometimes used in order to obtain a semiconductor chip with an adhesive film having a size corresponding to that of a chip for die bonding, that is, a semiconductor chip with an adhesive film. The dicing tape with an adhesive film includes, for example: the adhesive tape comprises a base material, a pressure-sensitive adhesive layer, and an adhesive film releasably adhered to the pressure-sensitive adhesive layer side. The adhesive film has a disk shape exceeding the size of the semiconductor wafer as a workpiece, and is concentrically bonded to the pressure-sensitive adhesive layer side of a dicing tape having a disk shape exceeding the size of the adhesive film.

As one of methods for obtaining a semiconductor chip with an adhesive film using a dicing tape with an adhesive film, a method is known which includes the following steps: and a step for spreading the dicing tape out of the dicing tape for the tape adhesive film to cut the adhesive film. In this method, first, a semiconductor wafer is bonded to an adhesive film of a dicing tape with an adhesive film. The semiconductor wafer is processed so that it can be diced into a plurality of semiconductor chips by, for example, being subsequently diced together with the dicing of the adhesive film. Next, in a predetermined spreading device, in order to cut the adhesive film so that a plurality of adhesive film pieces each adhering to the semiconductor chip are generated from the adhesive film on the dicing tape, the dicing tape with the adhesive film of the dicing tape is spread in the radial direction thereof (spreading step). In this expanding step, the adhesive film is also cut at a position corresponding to a position where the adhesive film of the semiconductor wafer is cut, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing tape with the adhesive film and/or the dicing tape. Then, in a predetermined dicing and bonding apparatus provided with a pickup process mechanism or the like, each semiconductor chip is picked up from the dicing tape by being pushed up by a pin member of the pickup mechanism from below the dicing tape together with an adhesive film having a size corresponding to the chip and adhering thereto (pickup process). Thus, a semiconductor chip with an adhesive film was obtained. The semiconductor chip with the adhesive film is fixedly bonded to an adherend such as a mounting board by die bonding via the adhesive film. Techniques for dicing tapes with adhesive films, which are used in the above-described manner, are described in, for example, patent documents 1 and 2 below.

Documents of the prior art

Patent document

Patent document 1: japanese laid-open patent publication No. 2007-2173

Patent document 2: japanese patent application laid-open No. 2010-177401

Disclosure of Invention

Problems to be solved by the invention

Conventionally, a dicing tape with an adhesive film may employ an ultraviolet-curable adhesive layer as a dicing tape adhesive layer. In the manufacturing process of a semiconductor device using such a dicing tape with an adhesive film, before the pickup step, the adhesive force of the adhesive layer is significantly reduced by UV irradiation of the dicing tape adhesive layer with a plurality of semiconductor chips with adhesive films in the ultraviolet irradiation apparatus (ultraviolet irradiation step).

The ultraviolet irradiation device includes, for example, a chamber for performing UV irradiation. The work to be UV-irradiated (for example, dicing tape with an adhesive film for holding the semiconductor chips obtained by the singulation) is set in a chamber in a state where a plurality of work pieces are housed in a cassette (e.g., a magazine) in a set, and is subjected to an ultraviolet irradiation step. In a semiconductor device manufacturing line, there are cases where: the ultraviolet irradiation apparatus is continuously operated, and such an ultraviolet irradiation process is sequentially repeated for each new set of the UV irradiation target workpieces.

However, when the ultraviolet irradiation apparatus is continuously operated, the ambient temperature in the chamber in which the UV irradiation is continuously or intermittently performed tends to increase. The temperature in the chamber during UV irradiation affects the degree of ultraviolet curing of the ultraviolet-curable dicing tape adhesive layer of the dicing tape with the tape adhesive film, and therefore affects the degree of decrease in the adhesive strength of the adhesive layer. Specifically, the following tendency exists: as the temperature in the chamber during UV irradiation is higher, the degree of progress of ultraviolet curing of the ultraviolet-curable dicing tape pressure-sensitive adhesive layer of the dicing tape with the adhesive film is lower, and the degree of decrease in the adhesive force is smaller.

Therefore, in the dicing tape with an adhesive film (semiconductor chips with an adhesive film formed by dicing the dicing tape) which has been subjected to UV irradiation under a high temperature environment in the ultraviolet irradiation step, it has been conventionally impossible to appropriately pick up the semiconductor chips with an adhesive film from the dicing tape in the subsequent pick-up step.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a dicing tape with an adhesive film which is suitable for satisfactorily cutting the adhesive film on the dicing tape in a spreading process using the dicing tape with the adhesive film for obtaining a semiconductor chip with the adhesive film, and which is suitable for suppressing the floating of the cut semiconductor chip with the adhesive film from the dicing tape and achieving satisfactory pickup in a pickup process.

Means for solving the problems

The dicing tape with an adhesive film provided by the invention comprises a dicing tape and an adhesive film. The dicing tape has a base material and an ultraviolet-curable adhesiveA laminated structure of the agent layers. The adhesive film is releasably adhered to the adhesive layer of the dicing tape. In addition, in the dicing tape with the adhesive film, the ratio of the 2 nd peel adhesion force to the 1 st peel adhesion force is 0.8-2, preferably 0.9-1.8, and the 1 st peel adhesion force is 300mJ/cm at the temperature of 22 DEG C²The 1 st peel adhesion measured by a T-type peel test between the pressure-sensitive adhesive layer and the adhesive film in the 1 st test piece irradiated with ultraviolet rays, wherein the 2 nd peel adhesion is 300mJ/cm at a temperature of 60 DEG C²The 2 nd peel adhesion force between the pressure-sensitive adhesive layer and the adhesive film in the 2 nd test piece irradiated with ultraviolet ray of (1) was measured by a T-peel test. The 1 st test piece and the 2 nd test piece are each a test piece cut out from the dicing tape with the adhesive film, and have a dicing tape and an adhesive film releasably adhered to the ultraviolet-curable adhesive layer. In the present invention, the ultraviolet irradiation to which the test piece is subjected means ultraviolet irradiation (irradiation from the substrate side) to the pressure-sensitive adhesive layer in the test piece over the substrate. 300mJ/cm²The ultraviolet ray irradiation of (2) can be carried out, for example, at an irradiation intensity of 150mW/cm²Is irradiated with ultraviolet light for 2 seconds. The T-peel test for measuring the 1 st peel adhesion and the 2 nd peel adhesion was performed at 23 ℃ and a peel speed of 300 mm/min. The dicing tape with an adhesive film having the above-described configuration can be used in a process of obtaining a semiconductor chip with an adhesive film in the manufacture of a semiconductor device.

As described above, the dicing tape with the adhesive film has a ratio of the 2 nd peel adhesion to the 1 st peel adhesion of 300mJ/cm at a temperature of 22 ℃ of 0.8 to 2, preferably 0.9 to 1.8²The 1 st peel adhesion measured by a T-type peel test between the pressure-sensitive adhesive layer and the adhesive film in the 1 st test piece irradiated with ultraviolet rays, wherein the 2 nd peel adhesion is 300mJ/cm at a temperature of 60 DEG C²The 2 nd peel adhesion force between the pressure-sensitive adhesive layer and the adhesive film in the 2 nd test piece irradiated with ultraviolet ray of (1) was measured by a T-peel test. Adhesive strength reduction by ultraviolet irradiation in an ultraviolet-curable adhesive layer of a dicing tapeWhen the temperature dependency of (a) is limited to the above-mentioned range, it is easy to achieve a balance between the adhesive force before ultraviolet irradiation (adhesive force before UV irradiation) and the adhesive force after ultraviolet irradiation (adhesive force after UV irradiation) in the ultraviolet irradiation step which actually accompanies a change in the ambient temperature, and therefore, it is easy to achieve a balance between a relatively high adhesive force required for the dicing tape adhesive layer in the above-mentioned spreading step for cutting the adhesive film on the dicing tape and the wafer and a relatively low adhesive force required for the dicing tape adhesive layer in the above-mentioned pickup step for picking up the semiconductor chip with the adhesive film from the dicing tape. The present inventors have obtained the above-described findings. Specifically, the examples and comparative examples are described below.

The above-mentioned constitution of the ratio of 2 or less, preferably 1.8 or less is about the adhesive force of the pressure-sensitive adhesive layer of the dicing tape, and it is not necessary to say that the adhesive force achieved when subjected to ultraviolet irradiation under a normal temperature environment is suitable for making the adhesive force achieved when subjected to ultraviolet irradiation under a high temperature environment of about 60 ℃ practical and to obtain a sufficiently weak adhesive force after UV irradiation required in the pickup step while securing a sufficiently strong adhesive force before UV irradiation. Further, a dicing tape adhesive layer in which a relatively high adhesive force required in the expanding step is sufficiently secured is suitable for suppressing the semiconductor chip with the adhesive film on the dicing tape from floating from the dicing tape during the period from the expanding step to the ultraviolet irradiation step.

As described above, the dicing tape with an adhesive film is suitable for satisfactorily cutting the adhesive film on the dicing tape in the expanding step, and for satisfactorily picking up the semiconductor chip with the adhesive film after cutting in the picking up step while suppressing the floating of the semiconductor chip from the dicing tape.

The 1 st peel adhesion of the dicing tape with an adhesive film is preferably 0.03 to 0.15N/20 mm. Such a configuration is preferable for limiting the post-UV-irradiation adhesive strength of the dicing tape adhesive layer in consideration of the actual change in the environmental temperature in the ultraviolet irradiation step to a practical range.

The peeling adhesive force between the adhesive layer of the cutting tape and the adhesive film in the cutting tape with the adhesive film is preferably 1.5-4.5N/20 mm measured by a T-type peeling test under the conditions of 23 ℃ and 300 mm/min of peeling speed. Such a configuration is suitable for suppressing the semiconductor chip with the adhesive film on the dicing tape from floating from the dicing tape during the period from the expanding step to the ultraviolet irradiation step when the expanding step is performed using the dicing tape with the adhesive film. This configuration is suitable for practical use of the pre-UV-irradiation adhesive force of the dicing tape adhesive layer and for limiting the post-UV-irradiation adhesive force in consideration of the actual change in the environmental temperature in the ultraviolet irradiation step to a practical range.

The peeling adhesive force between the adhesive layer and the adhesive film in the cutting tape with the adhesive film is preferably 0.5-2N/20 mm measured by a T-type peeling test under the conditions of-5 ℃ and the peeling speed of 300 mm/min. Such a configuration is suitable for satisfactorily cutting the adhesive film on the dicing tape when the dicing tape using the adhesive film with tape is subjected to the expanding step at a low temperature of, for example, 0 ℃. This configuration is suitable for practical use of the pre-UV-irradiation adhesive force of the dicing tape adhesive layer and for limiting the post-UV-irradiation adhesive force in consideration of the actual change in the environmental temperature in the ultraviolet irradiation step to a practical range.

The storage modulus (tensile storage modulus) of the adhesive film in the dicing tape with the adhesive film at 25 ℃ is preferably 1 to 5GPa, and more preferably 1.2 to 4 GPa. Such a configuration is suitable for ensuring the adhesion of the adhesive film to the dicing tape pressure-sensitive adhesive layer in a temperature range of room temperature or its vicinity.

The storage modulus of the adhesive film in the dicing tape with the adhesive film at-5 ℃ is preferably 3-5 GPa, and more preferably 3.5-4.5 GPa. Such a configuration is suitable for ensuring the cuttability of the adhesive film under low temperature conditions of, for example, 0 ℃ or lower.

The dicing tape of the dicing tape with the adhesive film preferably has a tensile stress of 3 to 12MPa, more preferably 3.5 to 11.5MPa at a strain value of 20% in a tensile test performed on a dicing tape test piece having a width of 10mm under conditions of an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min. Such a configuration is suitable for satisfactorily cutting the adhesive film on the dicing tape when the dicing tape using the adhesive film with tape is subjected to the expanding step under a temperature condition of, for example, 0 ℃.

Drawings

Fig. 1 is a schematic cross-sectional view of a dicing tape with an adhesive film according to an embodiment of the present invention.

Fig. 2 is a plan view of the dicing tape with the adhesive film shown in fig. 1.

Fig. 3 shows a part of the steps of an example of a method for manufacturing a semiconductor device using the dicing tape with the adhesive film shown in fig. 1.

Fig. 4 shows a subsequent process to that shown in fig. 3.

Fig. 5 shows a process subsequent to the process shown in fig. 4.

Fig. 6 shows a subsequent process to that shown in fig. 5.

Fig. 7 shows a process subsequent to the process shown in fig. 6.

Fig. 8 shows a subsequent process to the process shown in fig. 7.

Fig. 9 shows a subsequent process to the process shown in fig. 8.

Fig. 10 shows a part of the steps of another example of the method for manufacturing a semiconductor device using the dicing tape with the adhesive film shown in fig. 1.

Fig. 11 shows a process subsequent to the process shown in fig. 10.

Fig. 12 shows a part of the steps of another example of the method for manufacturing a semiconductor device using the dicing tape with the adhesive film shown in fig. 1.

Fig. 13 shows a process subsequent to the process shown in fig. 12.

Description of the reference numerals

X-belt adhesive film dicing tape

10 cutting belt

11 base material

12 adhesive layer

20, 21 adhesive film

W, 30A, 30B semiconductor wafer

30C semiconductor wafer division body

30a modified region

30b dividing groove

31 semiconductor chip

Detailed Description

Fig. 1 is a schematic cross-sectional view of a dicing tape X with an adhesive film according to an embodiment of the present invention. The dicing tape X with an adhesive film has a laminated structure including the dicing tape 10 and the adhesive film 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The pressure-sensitive adhesive layer 12 has a pressure-sensitive adhesive surface 12a on the side of the adhesive film 20. The adhesive film 20 is releasably adhered to the adhesive layer 12 of the dicing tape 10 and/or the adhesive surface 12a thereof. In the present embodiment, the dicing tape 10 and the adhesive film 20 have a disk shape and are arranged concentrically as shown in fig. 2. Such a dicing tape X with an adhesive film can be used in a process of obtaining a semiconductor chip with an adhesive film in the manufacture of a semiconductor device.

The base material 11 of the dicing tape 10 in the dicing tape X with an adhesive film is an element that functions as a support in the dicing tape 10 and/or the dicing tape X with an adhesive film. The substrate 11 is, for example, a plastic substrate having ultraviolet light transmittance, and a plastic film can be suitably used as the plastic substrate. Examples of the material constituting the plastic substrate include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aramid, fluorine resin, cellulose resin, and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylate copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The substrate 11 may be formed of one material or two or more materials. The substrate 11 may have a single-layer structure or a multi-layer structure. When the substrate 11 is formed of a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

The surface of the substrate 11 on the side of the pressure-sensitive adhesive layer 12 may be subjected to a physical treatment, a chemical treatment, or an undercoating treatment for improving adhesion to the pressure-sensitive adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, blast treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, and ionizing radiation treatment. The chemical treatment may be, for example, a chromic acid treatment.

The thickness of the substrate 11 is preferably 40 μm or more, and preferably 50 μm or more, from the viewpoint of ensuring the strength with which the substrate 11 functions as a support in the dicing tape 10 and/or the dicing tape X with an adhesive film. The thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, from the viewpoint of achieving appropriate flexibility of the dicing tape 10 and/or the dicing tape X with an adhesive film.

The pressure-sensitive adhesive layer 12 of the dicing tape 10 is an ultraviolet-curable pressure-sensitive adhesive layer in which the adhesive force is reduced by ultraviolet irradiation. Examples of the adhesive for forming the ultraviolet-curable adhesive layer include an additive type ultraviolet-curable adhesive containing: a base polymer such as an acrylic polymer as an acrylic pressure-sensitive adhesive, and a uv-polymerizable monomer component and oligomer component having a functional group such as a uv-polymerizable carbon-carbon double bond.

The acrylic polymer preferably contains a maximum mass ratio of monomer units derived from a (meth) acrylate ester. "(meth) acrylic acid" means "acrylic acid" and/or "methacrylic acid". Examples of the (meth) acrylate ester of the monomer unit for forming the acrylic polymer, that is, the (meth) acrylate ester as the constituent monomer of the acrylic polymer include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. Examples of the alkyl (meth) acrylate include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, tert-butyl ester, pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (i.e., lauryl ester), tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl ester, and eicosyl ester of (meth) acrylic acid. Examples of the cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylates. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As the constituent monomer of the acrylic polymer, one kind of (meth) acrylate may be used, or two or more kinds of (meth) acrylates may be used. As the (meth) acrylic acid ester for the acrylic polymer, at least one selected from the group consisting of 2-ethylhexyl acrylate and lauryl (meth) acrylate is preferably used. In addition, the proportion of the (meth) acrylate in the entire constituent monomers of the acrylic polymer is preferably 25 mol% or more, and more preferably 30 mol% or more, in order to appropriately exhibit basic characteristics such as adhesiveness with respect to the (meth) acrylate in the pressure-sensitive adhesive layer 12. The ratio is, for example, 70 mol% or less.

The acrylic polymer may contain a monomer unit derived from one or two or more other monomers copolymerizable with the (meth) acrylate ester, from the viewpoint of modification of the cohesive force and heat resistance thereof, for example. Examples of the other copolymerizable monomer used for forming the monomer unit of the acrylic polymer, that is, the other copolymerizable monomer as a constituent monomer of the acrylic polymer include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a nitrogen-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, and a phosphoric acid group-containing monomer. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the nitrogen-containing monomer include acryloylmorpholine, acrylamide, and acrylonitrile. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, and (meth) acryloyloxynaphthalenesulfonic acid. Examples of the monomer having a phosphoric acid group include 2-hydroxyethyl acryloyl phosphate. As the above-mentioned copolymerizable monomer for the acrylic polymer, a hydroxyl group-containing monomer and a nitrogen-containing monomer are preferably used. As the hydroxyl group-containing monomer, at least one selected from the group consisting of 2-hydroxyethyl (meth) acrylate and 4-hydroxybutyl (meth) acrylate is preferably used. As the nitrogen-containing monomer, acryloyl morpholine is preferably used.

When the acrylic polymer contains a monomer unit derived from a hydroxyl group-containing monomer, that is, when the acrylic polymer contains a hydroxyl group-containing monomer as a constituent monomer thereof, the proportion of the hydroxyl group-containing monomer as a constituent monomer in the acrylic polymer is preferably 13 to 30 mol%, more preferably 15 to 28 mol%. Such a configuration is preferable from the viewpoint that the pressure-sensitive adhesive layer 12 is easily controllable in peel force from an adherend.

When the acrylic polymer contains a monomer unit derived from a nitrogen-containing monomer, that is, when the acrylic polymer contains a nitrogen-containing monomer as a constituent monomer thereof, the proportion of the nitrogen-containing monomer as a constituent monomer in the acrylic polymer is preferably 5 to 25 mol%, more preferably 6 to 23 mol%. Such a configuration is preferable from the viewpoint of ensuring the adhesive strength of the pressure-sensitive adhesive layer 12 to an adherend.

When the acrylic polymer contains Acryloylmorpholine (ACMO) as a constituent monomer thereof, the ratio (molar ratio) of acryloylmorpholine to alkyl (meth) acrylate in the acrylic polymer is preferably 0.25 or more. Such a configuration is preferable from the viewpoint of ensuring the adhesive strength of the pressure-sensitive adhesive layer 12 to an adherend. This ratio is, for example, 0.9 or less, preferably 0.8 or less, from the viewpoint of achieving an excessively strong adhesive force of the pressure-sensitive adhesive layer 12.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as a (meth) acrylate ester in order to form a crosslinked structure in the polymer skeleton. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. "(meth) acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In order to appropriately exhibit basic characteristics such as adhesiveness with a (meth) acrylate, the ratio of the polyfunctional monomer in the entire constituent monomers of the acrylic polymer is preferably 40 mol% or less, and preferably 30 mol% or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. In view of high cleanliness in the process of manufacturing a semiconductor device using the dicing tape 10 and/or the dicing tape X with an adhesive film, the low-molecular-weight substance in the pressure-sensitive adhesive layer 12 in the dicing tape 10 and/or the dicing tape X with an adhesive film is preferably small, and in this case, the weight-average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, and more preferably 20 to 300 ten thousand. The weight average molecular weight (Mw) of the acrylic polymer is a value in terms of standard polystyrene measured by Gel Permeation Chromatography (GPC).

The pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive used for forming the same may contain, for example, a crosslinking agent in order to increase the average molecular weight of a base polymer such as an acrylic polymer. Examples of the crosslinking agent for forming a crosslinked structure by reacting with a base polymer such as an acrylic polymer include: polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine crosslinking agents as the polyfunctional isocyanate crosslinking agents. From the viewpoint of suppressing the temperature dependence of the pressure-sensitive adhesive layer 12 in which the adhesive force decreases by ultraviolet irradiation (the higher the ambient temperature at the time of ultraviolet irradiation, the lower the degree of progress of ultraviolet curing of the pressure-sensitive adhesive layer 12, the smaller the degree of decrease in the adhesive force), this crosslinking agent is preferably a polyisocyanate compound which is a polyfunctional isocyanate-based crosslinking agent.

The content of the crosslinking agent in the pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive composition for forming the same is preferably 0.1 part by mass or more, more preferably 0.3 part by mass or more, and still more preferably 0.5 part by mass or more, per 100 parts by mass of a base polymer such as an acrylic polymer. The content is preferably 5 parts by mass or less, more preferably 4 parts by mass or less, and still more preferably 3 parts by mass or less. Such a configuration is preferable from the viewpoint of suppressing the temperature dependence of the pressure-sensitive adhesive layer 12, such as adhesion to the ring frame and reduction in adhesive strength due to ultraviolet irradiation.

Examples of the ultraviolet-polymerizable monomer component for forming the ultraviolet-curable adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the ultraviolet-polymerizable oligomer component used for forming the ultraviolet-curable adhesive include various oligomers such as urethane oligomers, polyether oligomers, polyester oligomers, polycarbonate oligomers, and polybutadiene oligomers, and the molecular weight is preferably about 100 to 30000. The total content of the ultraviolet-polymerizable monomer component and oligomer component in the ultraviolet-curable adhesive is determined within a range that can suitably reduce the adhesive strength of the formed adhesive layer 12, and is preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass, relative to 100 parts by mass of a base polymer such as an acrylic polymer. As the additive type ultraviolet-curable adhesive, for example, those disclosed in JP-A-60-196956 can be used.

Examples of the ultraviolet-curable adhesive used for the adhesive layer 12 include internal type ultraviolet-curable adhesives containing a base polymer having a functional group such as an ultraviolet-polymerizable carbon-carbon double bond at a polymer side chain, a polymer main chain, or a polymer main chain end. Such an internal type ultraviolet curable adhesive is suitable for suppressing an undesirable change in adhesive properties with time due to the movement of low molecular weight components in the formed adhesive layer 12.

As the base polymer contained in the internal type ultraviolet curable adhesive, a base polymer having an acrylic polymer as a basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the acrylic polymer described above can be used. Examples of the method for introducing an ultraviolet-polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after a raw material monomer containing a monomer having a predetermined functional group (1 st functional group) is copolymerized to obtain an acrylic polymer, a compound having a predetermined functional group (2 nd functional group) and an ultraviolet-polymerizable carbon-carbon double bond, which are capable of bonding by reaction with the 1 st functional group, is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining ultraviolet-polymerizability of the carbon-carbon double bond.

Examples of the combination of the 1 st functional group and the 2 nd functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, a hydroxyl group and an isocyanate group, and an isocyanate group and a hydroxyl group. Among these combinations, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of easiness of reaction follow-up. Further, since the production of a polymer having a highly reactive isocyanate group is technically difficult, it is more preferable that the 1 st functional group on the acrylic polymer side is a hydroxyl group and the 2 nd functional group is an isocyanate group from the viewpoint of easiness of production or acquisition of the acrylic polymer. In this case, an isocyanate compound having both an ultraviolet-polymerizable carbon-carbon double bond and an isocyanate group as a 2 nd functional group, that is, an isocyanate compound having an ultraviolet-polymerizable unsaturated functional group, includes, for example, isocyanate group-containing (meth) acrylate. Examples of the isocyanate group-containing (meth) acrylate include 2- (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, and m-isopropenyl- α, α -dimethylbenzyl isocyanate.

When the acrylic polymer for forming the internal type ultraviolet curable adhesive contains an isocyanate group-containing (meth) acrylate as a constituent monomer, the proportion of the isocyanate group-containing (meth) acrylate as a constituent monomer in the acrylic polymer is preferably 12 to 25 mol% (the isocyanate group-containing (meth) acrylate added to the main chain of the acrylic polymer for forming the internal type ultraviolet curable adhesive is a constituent monomer of the acrylic polymer for forming the adhesive in the present embodiment). Such a configuration is preferable from the viewpoint of controlling the adhesive force and/or the peeling force of the adhesive layer 12, which is used by changing the adhesive force during use of the dicing tape X with an adhesive film. This configuration is also preferable from the viewpoint of suppressing the temperature dependence of the pressure-sensitive adhesive layer 12 on the decrease in adhesive strength due to ultraviolet irradiation.

The acrylic polymer for forming the internal type ultraviolet-curable adhesive preferably contains, as constituent monomers, an alkyl (meth) acrylate such as 2-hydroxyethyl (meth) acrylate or lauryl (meth) acrylate, a hydroxyl group-containing monomer such as 2-hydroxyethyl (meth) acrylate or 4-hydroxybutyl (meth) acrylate, and an isocyanate group-containing (meth) acrylate such as 2- (meth) acryloyloxyethyl isocyanate, more preferably, the composition contains, as constituent monomers, an alkyl (meth) acrylate such as 2-hydroxyethyl (meth) acrylate or lauryl (meth) acrylate, a hydroxyl group-containing monomer such as 2-hydroxyethyl (meth) acrylate or 4-hydroxybutyl (meth) acrylate, a nitrogen-containing monomer such as acryloylmorpholine, and an isocyanate group-containing (meth) acrylate such as 2- (meth) acryloyloxyethyl isocyanate. Such a configuration is preferable from the viewpoint of controlling the adhesive force and/or the peeling force of the adhesive layer 12, which is used by changing the adhesive force during use of the dicing tape X with an adhesive film.

The adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acyl phosphine oxides, and acyl phosphonates. Examples of the α -ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexylphenylketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2-dimethoxy-1, 2-diphenylethan-1-one, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzildimethylketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalenesulfonyl chloride. Examples of the optically active oxime compound include 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3, 3' -dimethyl-4-methoxybenzophenone. Examples of the thioxanthone-based compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone, and 2, 4-diisopropylthioxanthone. The content of the photopolymerization initiator in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 10 parts by mass per 100 parts by mass of a base polymer such as an acrylic polymer.

The pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive used for forming the same may contain, in addition to the above-described components, a crosslinking accelerator, a tackifier, an antioxidant, and a colorant such as a pigment and a dye. The colorant may be a compound which is colored by being irradiated with radiation. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm. Such a configuration is preferable for obtaining a balance of the adhesive force to, for example, the adhesive film 20 before and after the ultraviolet curing of the pressure-sensitive adhesive layer 12.

The dicing tape 10 having the above-described configuration preferably has a tensile stress of 3 to 12MPa, more preferably 3.5 to 11.5MPa at a strain value of 20% in a tensile test performed on a dicing tape test piece having a width of 10mm under conditions of an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min.

In the above-described configuration for securing the tensile stress of the dicing tape 10, the substrate 11 is preferably a single-layer structure substrate made of ethylene-vinyl acetate copolymer (EVA) or a multi-layer structure substrate including an EVA layer having a thickness of 50 μm or more.

The adhesive film 20 in the dicing tape X with an adhesive film has a structure that can function as a thermosetting die bonding adhesive. The adhesive film 20 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have the following composition: comprising a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to bond. Such an adhesive film 20 may have a single-layer structure or a multilayer structure having different compositions between adjacent layers.

When the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. The adhesive film 20 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Epoxy resin tends to have a small content of ionic impurities or the like that may cause corrosion of a semiconductor chip to be die-bonded, and is therefore preferred as the thermosetting resin in the adhesive film 20. As a curing agent for making the epoxy resin thermosetting, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrahydroxyphenylethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins. Phenol novolac type epoxy resins, o-cresol novolac type epoxy resins, biphenyl type epoxy resins, trihydroxyphenyl methane type epoxy resins, and tetrahydroxyphenyl ethane type epoxy resins are preferred as the epoxy resins in the adhesive film 20 because they have high reactivity with phenolic resins as curing agents and are excellent in heat resistance.

Examples of the phenol resin which can function as a curing agent for an epoxy resin include novolak phenol resins, resol phenol resins, and polyoxystyrenes such as polyoxystyrenes. Examples of the novolak type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, and a nonylphenol novolak resin. The adhesive film 20 may contain one kind of phenol resin, or may contain two or more kinds of phenol resins as a curing agent for the epoxy resin. When a phenol novolac resin or a phenol aralkyl resin is used as a curing agent for an epoxy resin as an adhesive for die bonding, the adhesive tends to have improved connection reliability, and therefore, it is preferable as the curing agent for an epoxy resin in the adhesive film 20.

When the adhesive film 20 contains an epoxy resin and a phenol resin as a curing agent thereof, both resins are blended in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, to 1 equivalent of an epoxy group in the epoxy resin and a hydroxyl group in the phenol resin. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin is sufficiently performed when the adhesive film 20 is cured.

The content ratio of the thermosetting resin in the adhesive film 20 is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass, from the viewpoint of appropriately expressing the function of the adhesive film 20 as a thermosetting adhesive.

The thermoplastic resin in the adhesive film 20 functions as an adhesive, for example, and when the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin, examples of the thermoplastic resin include acrylic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymers, ethylene-acrylic acid ester copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6, 6-nylon, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamide-imide resins, and fluorine resins. The adhesive film 20 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resins are preferred as the thermoplastic resin in the adhesive film 20 because they have few ionic impurities and high heat resistance.

When the adhesive film 20 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains a monomer unit derived from a (meth) acrylate ester in a maximum mass ratio.

Examples of the (meth) acrylate ester of the monomer unit for forming the acrylic resin, that is, the (meth) acrylate ester as the constituent monomer of the acrylic resin include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. Examples of such (meth) acrylates include the alkyl (meth) acrylates described above as the constituent monomers of the acrylic polymer for the pressure-sensitive adhesive layer 12. As the constituent monomer of the acrylic resin, one kind of (meth) acrylate may be used, or two or more kinds of (meth) acrylates may be used.

The acrylic resin may contain monomer units derived from one or two or more other monomers copolymerizable with the (meth) acrylic acid ester, for example, from the viewpoint of modification of the cohesive force and heat resistance thereof. Examples of the other copolymerizable monomer used for forming the monomer unit of the acrylic resin, that is, the other copolymerizable monomer as a constituent monomer of the acrylic resin include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a nitrogen-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, and a phosphoric acid group-containing monomer. Specific examples of these monomers include those described above as the constituent monomers of the acrylic polymer for the pressure-sensitive adhesive layer 12.

When the adhesive film 20 has a composition containing a thermoplastic resin having a thermosetting functional group, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin, for example. The acrylic resin used for forming the thermosetting functional group-containing acrylic resin preferably contains the largest proportion by mass of monomer units derived from a (meth) acrylate ester. As such a (meth) acrylate, for example, the same (meth) acrylate as the monomer described above as the constituent monomer of the acrylic polymer for the pressure-sensitive adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group used for forming the thermosetting functional group-containing acrylic resin include glycidyl groups, carboxyl groups, hydroxyl groups, and isocyanate groups. Among these, glycidyl groups and carboxyl groups can be suitably used. That is, as the acrylic resin having a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. In addition, a curing agent that can react with the thermosetting functional group in the thermosetting functional group-containing acrylic resin is selected according to the kind of the thermosetting functional group. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same curing agent as described above as the curing agent for epoxy resin can be used as the curing agent.

In order to achieve a certain degree of crosslinking in the adhesive film 20 before curing for die bonding, for example, a polyfunctional compound capable of reacting with a functional group at the molecular chain terminal of the resin component contained in the adhesive film 20 and bonding thereto is preferably blended in advance as a crosslinking agent in the adhesive film-forming resin composition. Such a configuration is preferable in terms of improving the adhesive properties at high temperatures and improving the heat resistance of the adhesive film 20. Examples of such a crosslinking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and an adduct of a polyol and a diisocyanate. The content of the crosslinking agent in the resin composition for forming an adhesive film is preferably 0.05 parts by mass or more in terms of increasing the cohesive force of the formed adhesive film 20 and preferably 7 parts by mass or less in terms of increasing the adhesive force of the formed adhesive film 20, relative to 100 parts by mass of the resin having the functional group capable of reacting with the crosslinking agent to bond. As the crosslinking agent in the adhesive film 20, other polyfunctional compounds such as epoxy resins and polyisocyanate compounds may be used in combination.

The adhesive film 20 may contain a filler. The incorporation of a filler into the adhesive film 20 is preferable in terms of adjusting physical properties such as elastic modulus, yield strength, and elongation at break of the adhesive film 20. Examples of the filler include inorganic fillers and organic fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. The adhesive film 20 may contain one kind of filler, or may contain two or more kinds of fillers.

Examples of the constituent material of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. Examples of the constituent material of the inorganic filler include elemental metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon, and graphite. When the adhesive film 20 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, and more preferably 20% by mass or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less.

Examples of the constituent material of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyether ether ketone, polyetherimide, and polyesterimide. When the adhesive film 20 contains an organic filler, the content of the organic filler is preferably 2% by mass or more, and more preferably 5% by mass or more. The content is preferably 20% by mass or less, and more preferably 15% by mass or less.

When the adhesive film 20 contains a filler, the filler preferably has an average particle diameter of 0.005 to 10 μm, more preferably 0.05 to 1 μm. The filler having an average particle diameter of 0.005 μm or more is preferably used in order to achieve high wettability and adhesiveness of the adhesive film 20 to an adherend such as a semiconductor wafer. The filler having an average particle diameter of 10 μm or less is preferably used in order to obtain a sufficient filler-adding effect to the adhesive film 20 and to ensure heat resistance. The average particle diameter of the filler can be determined, for example, by using a photometric particle size distribution meter (trade name "LA-910", manufactured by HORIBA, ltd.).

The adhesive film 20 may contain a heat curing catalyst. The addition of the thermosetting catalyst to the adhesive film 20 is preferable in terms of sufficiently advancing the curing reaction of the resin component at the time of curing the adhesive film 20 and increasing the curing reaction rate. Examples of such a thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2 '-methylimidazolyl- (1') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -undecylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -ethyl-4 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Examples of the triphenylphosphine-based compound include triphenylphosphine, tris (butylphenyl) phosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane-based compound include trichloroborane. The adhesive film 20 may contain one kind of heat curing catalyst, or may contain two or more kinds of heat curing catalysts.

The adhesive film 20 may contain one or two or more other components as necessary. Examples of the other components include a flame retardant, a silane coupling agent, and an ion scavenger.

The thickness of the adhesive film 20 is preferably 3 μm or more, more preferably 7 μm or more. The thickness of the adhesive film 20 is preferably 150 μm or less, and more preferably 140 μm or less.

The storage modulus (tensile storage modulus) of the adhesive film 20 at 25 ℃ is preferably 1 to 5GPa, and more preferably 1.2 to 4 GPa. The storage modulus (tensile storage modulus) of the adhesive film 20 at-5 ℃ is preferably 3 to 5GPa, and more preferably 3.5 to 4.5GPa, as described above. The storage modulus can be determined by, for example, dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring apparatus (trade name "RSAIII", manufactured by tas instruments). In this measurement, the initial inter-chuck distance of the sample piece holding chuck was set to 22.5mm, the measurement mode was set to the tensile mode, the measurement environment was set to the nitrogen atmosphere, the measurement temperature range was set to, for example, -40 ℃ to 280 ℃, the frequency was set to 10Hz, the dynamic strain was set to 0.005%, and the temperature rise rate was set to 10 ℃/min. The storage modulus of the adhesive film 20 can be adjusted by, for example, adjusting the amount of a filler to be blended in the adhesive film 20, adjusting the glass transition temperature of a thermoplastic resin such as an acrylic polymer to be blended, and adjusting the amount of a thermosetting component to be solidified at room temperature.

The dicing tape X with the adhesive film having the above structure has a ratio of a 2 nd peel adhesion to a 1 st peel adhesion of 300mJ/cm at a temperature of 22 ℃ of 0.8 to 2, preferably 0.9 to 1.8²The 1 st peel adhesion measured by the T-peel test between the pressure-sensitive adhesive layer 12 and the adhesive film 20 in the 1 st test piece irradiated with ultraviolet rays, wherein the 2 nd peel adhesion is 300mJ/cm at a temperature of 60 DEG C²The 2 nd peel adhesion force between the pressure-sensitive adhesive layer 12 and the adhesive film 20 in the 2 nd test piece irradiated with ultraviolet ray (2) measured by a T-peel test. Each of the 1 st test piece and the 2 nd test piece is a test piece cut out from a dicing tape X with an adhesive film, and has a dicing tape 10 and an adhesive film 20 releasably adhered to the ultraviolet-curable adhesive layer 12. In the present embodiment, the ultraviolet irradiation to which the test piece is subjected means ultraviolet irradiation (irradiation from the base material 11 side) to the pressure-sensitive adhesive layer 12 in the test piece over the base material 11. 300mJ/cm²The ultraviolet radiation of (2) can be, for example, irradiation intensity150mW/cm²Is irradiated with ultraviolet light for 2 seconds. The T-peel test for measuring the 1 st peel adhesion and the 2 nd peel adhesion was performed at 23 ℃ and a peel speed of 300 mm/min. The T-peel test can be carried out, for example, using a T-peel tester (trade name "Autograph AG-20 KNSD", manufactured by Shimadzu corporation).

The 1 st peel adhesion of the dicing tape X with an adhesive film is preferably 0.03 to 0.15N/20 mm.

The peel adhesion (No. 3 peel adhesion) between the pressure-sensitive adhesive layer 12 and the adhesive film 20 in the dicing tape X with an adhesive film, as measured by a T-type peel test at 23 ℃ and a peel speed of 300 mm/min, is preferably 1.5 to 4.5N/20 mm.

The peel adhesion (4 th peel adhesion) between the pressure-sensitive adhesive layer 12 and the adhesive film 20 in the dicing tape X with an adhesive film, as measured by a T-type peel test at-5 ℃ and a peel speed of 300 mm/min, is preferably 0.5 to 2N/20 mm.

The peel adhesion (1 st peel adhesion to 4 th peel adhesion) can be adjusted by adjusting the storage modulus as described above, for example.

The above dicing tape X with an adhesive film can be produced, for example, as follows.

The dicing tape 10 with the dicing tape X of the adhesive film can be produced by providing the adhesive layer 12 on the prepared substrate 11. For example, the resin substrate 11 can be produced by a film-forming method such as a calendering film-forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. The film and/or the substrate 11 after the film formation is subjected to a predetermined surface treatment as necessary. In the formation of the pressure-sensitive adhesive layer 12, for example, after preparing a pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer, the composition is first applied to the substrate 11 or a predetermined separator to form a pressure-sensitive adhesive composition layer. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is heated and dried as necessary, and is subjected to a crosslinking reaction as necessary. The heating temperature is, for example, 80 to 150 ℃, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the separator, the separator-attached adhesive layer 12 is bonded to the substrate 11, and thereafter, the separator is peeled off. In this way, the dicing tape 10 having a laminated structure of the base material 11 and the pressure-sensitive adhesive layer 12 was produced.

In the production of the adhesive film 20 with the dicing tape X of the adhesive film, first, an adhesive composition for forming the adhesive film 20 is prepared, and then the composition is applied to a predetermined separator to form an adhesive composition layer. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a plastic film surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent, and paper. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is heated and dried as necessary, and is subjected to a crosslinking reaction as necessary. The heating temperature is, for example, 70 to 160 ℃, and the heating time is, for example, 1 to 5 minutes. The adhesive film 20 can be produced in the form of a separator in the above manner.

In the production of the dicing tape X with adhesive film, the separator-attached adhesive film 20 is subsequently punched into a disc shape having a predetermined diameter, and the adhesive film 20 is then pressure-bonded to the pressure-sensitive adhesive layer 12 side of the dicing tape 10. The bonding temperature is, for example, 30 to 50 ℃, preferably 35 to 45 ℃. The bonding pressure (linear pressure) is, for example, 0.1 to 20kgf/cm, preferably 1 to 10 kgf/cm. Next, the dicing tape 10 bonded to the adhesive film 20 in the above-described manner is punched into a disc shape having a predetermined diameter such that the center of the dicing tape 10 coincides with the center of the adhesive film 20.

In this manner, the dicing tape X with the adhesive film can be produced. In the dicing tape X with an adhesive film, a separator (not shown) may be provided on the adhesive film 20 side so as to cover at least the adhesive film 20. The separator is an element for protecting the adhesive film 20 and the pressure-sensitive adhesive layer 12 from being exposed, and is peeled from the adhesive film when the dicing tape X with the adhesive film is used.

Fig. 3 to 9 show an example of a method for manufacturing a semiconductor device using the dicing tape X with an adhesive film described above.

In the present method for manufacturing a semiconductor device, first, as shown in fig. 3 (a) and 3 (b), a modified region 30a is formed in a semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been formed on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with a laser beam focused inside the wafer from the side opposite to the wafer processing tape T1 along the pre-dividing line thereof in a state where the semiconductor wafer W is held on the wafer processing tape T1, and the modified region 30a is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30a is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified regions 30a on the preliminary dividing lines in the semiconductor wafer by laser irradiation is described in detail in, for example, japanese patent application laid-open No. 2002-192370, and the laser irradiation conditions in the present embodiment can be appropriately adjusted within the following ranges, for example.

< laser irradiation conditions >

(A) Laser

(B) Focusing lens

Multiplying power of 100 times or less

NA 0.55

Transmittance to laser wavelength of 100% or less

(C) The moving speed of the mounting table for mounting the semiconductor substrate is below 280 mm/s

Next, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while being held on the wafer processing tape T1, whereby a semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips 31 is formed as shown in fig. 3 (c) (wafer thinning step). The grinding process can be performed using a grinding apparatus provided with a grinding wheel.

Next, as shown in fig. 4 (a), the semiconductor wafer 30A held by the wafer processing tape T1 is bonded to the dicing tape X with an adhesive film on the adhesive film 20 side. Thereafter, as shown in fig. 4 (b), the wafer processing tape T1 is peeled from the semiconductor wafer 30A.

Next, a ring frame 41 made of SUS, for example, is attached to the adhesive layer 12 around the adhesive film 20 in the dicing tape X with an adhesive film, and then, as shown in fig. 5 (a), the dicing tape X with an adhesive film of the semiconductor wafer 30A is fixed to a holder 42 of the expanding device via the ring frame 41.

Then, as shown in fig. 5 b, the 1 st expanding step (cold expanding step) is performed under a predetermined low temperature condition, and the semiconductor wafer 30A is diced into a plurality of semiconductor chips 31, and the adhesive film 20 of the dicing tape X with an adhesive film is cut into small adhesive films 21, thereby obtaining semiconductor chips 31 with an adhesive film. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with adhesive film and raised, and the dicing tape 10 with the dicing tape X with adhesive film to which the semiconductor wafer 30A is bonded is expanded so as to be stretched in the two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansion is performed under the condition that a tensile stress of, for example, 15 to 32MPa is generated in the dicing tape 10. The temperature condition in the cold expansion step is, for example, 0 ℃ or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion rate (the speed at which the jack-up member 43 is raised) in the cold expansion step is, for example, 1 to 400 mm/sec. The amount of expansion in the cold expansion step is, for example, 3 to 16 mm. These conditions relating to the expansion in the cold expansion step are also the same in the cold expansion step described later.

In the cold-spreading step, the adhesive film 20 of the dicing tape X with an adhesive film is cut into small pieces of adhesive films 21, and the semiconductor chip 31 with an adhesive film is obtained. Specifically, in this step, cracks are formed in the fragile modified region 30A of the semiconductor wafer 30A, and singulation into semiconductor chips 31 (separation between the wafer and the adhesive film in the form of invisible dicing) occurs. At the same time, in this step, in the adhesive film 20 that adheres to the pressure-sensitive adhesive layer 12 of the expanded dicing tape 10, the deformation is suppressed in each region of the semiconductor wafer 30A where the semiconductor chips 31 adhere to each other, while such a deformation suppressing action is not generated at a position facing the crack formation position of the wafer, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the adhesive film 20 is cut at a position facing the crack formation position between the semiconductor chips 31. After this step, as shown in fig. 5 (c), the jack-up member 43 is lowered, and the expanded state of the dicing tape 10 is released.

Next, as shown in fig. 6 (a) and 6 (b), the 2 nd expanding step (room temperature expanding step) is performed to expand the distance between the semiconductor chips 31 with the adhesive film. In this step, the table 44 provided in the expanding device is raised to expand the dicing tape 10 with the dicing tape X of the adhesive film. The platen 44 is capable of applying a negative pressure to the workpiece on the platen face to vacuum the workpiece. The temperature condition in the second expansion step 2 is, for example, 10 ℃ or higher, preferably 15 to 30 ℃. The spreading speed (speed at which the table 44 is raised) in the second spreading step 2 is, for example, 0.1 to 10 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16 mm. In this step, the dicing tape 10 is spread by the rise of the stage 44 (thereby the separation distance of the semiconductor chips 31 with the adhesive film is increased), and thereafter, the stage 44 sucks the dicing tape 10 in vacuum. Then, while maintaining the suction by the table 44, the table 44 is lowered along with the workpiece as shown in fig. 6 (c). In this embodiment, the periphery of the semiconductor wafer 30A (the portion outside the holding region of the semiconductor chip 31) in the dicing tape X with the adhesive film is heated and shrunk in this state (heat shrinking step). Thereafter, the vacuum suction state by the stage 44 is released. Through the heat shrinkage process, the dicing tape X with the adhesive film is formed in the following state: a predetermined degree of tension acts on the wafer bonding region which is stretched and temporarily relaxed in the first and second stretching steps, and the separation distance between the semiconductor chips 31 is fixed even after the vacuum suction state is released.

In the present method for manufacturing a semiconductor device, as shown in fig. 7, ultraviolet irradiation for promoting ultraviolet curing to lower the adhesive strength is then performed on the adhesive layer 12 (ultraviolet irradiation step). Specifically, the entire pressure-sensitive adhesive layer 12 is irradiated with ultraviolet rays R from the substrate 11 side of the dicing tape 10 using, for example, a high-pressure mercury lamp. The cumulative quantity of light irradiated is, for example, 50 to 500mJ/cm²Preferably 100 to 300mJ/cm². The region of the dicing tape X with an adhesive film to be irradiated with ultraviolet light as a measure for reducing the adhesive strength of the adhesive layer 12 is, for example, a region D shown in fig. 1 except for the edge portion thereof in the bonding region of the adhesive film 20 in the adhesive layer 12.

In the present semiconductor device manufacturing method, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape X with the adhesive film by using a cleaning liquid such as water as necessary, a pickup step is performed by using a dicing bonding apparatus having both a pickup mechanism and a spreading mechanism.

Specifically, first, as shown in fig. 8 (a), in a state where the dicing tape X with the adhesive film having the plurality of semiconductor chips 31 and/or the dicing tape 10 thereof is fixed to the holder 45 of the die bonding apparatus via the ring frame 41, the hollow cylindrical-shaped lift member 46 provided in the apparatus is brought into contact with the dicing tape 10 on the lower side of the dicing tape 10 in the drawing and is lifted. Thereby, the dicing tape 10 is expanded (pre-pickup expansion) so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction thereof.

Next, as shown in fig. 8 (b), the semiconductor chip 31 with the adhesive film is picked up from the dicing tape 10. For example, the semiconductor chip 31 with an adhesive film to be picked up is lifted up by the pin member 47 of the pickup mechanism on the lower side of the dicing tape 10 in the drawing, and is then sucked and held by the suction jig 48 after being pushed up through the dicing tape 10. In the pickup, the pin member 47 is pushed up at a speed of, for example, 1 to 100 mm/sec and the pin member 47 is pushed up at an amount of, for example, 50 to 3000 μm.

Next, as shown in fig. 9 (a), the picked-up semiconductor chip 31 with the adhesive film is temporarily fixed to a predetermined adherend 51 via the adhesive film 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board.

Next, as shown in fig. 9 b, an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected by a bonding wire 52 (wire bonding step). The electrode pad of the semiconductor chip 31, the terminal portion of the adherend 51, and the bonding wire 52 can be connected by ultrasonic welding with heating, and the bonding film 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The heating temperature of the wire in the wire bonding is, for example, 80 to 250 ℃. In addition, the heating time is several seconds to several minutes.

Next, as shown in fig. 9 c, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In this step, the adhesive film 21 is thermally cured. In this step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. When the curing of the sealing resin 53 is not sufficiently performed in this step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after this step. In the sealing step, even when the adhesive film 21 is not completely heat-cured, the adhesive film 21 may be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ℃, and the heating time is, for example, 0.5 to 8 hours.

The semiconductor device can be manufactured by operating as described above.

In the present semiconductor device manufacturing method, instead of the above-described configuration in which the semiconductor wafer 30A is bonded to the dicing tape X with an adhesive film, the semiconductor wafer 30B produced in the following manner may be bonded to the dicing tape X with an adhesive film.

In the production of the semiconductor wafer 30B, first, as shown in fig. 10 a and 10B, dividing grooves 30B are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor elements (not shown) have been formed on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and the dividing groove 30b having a predetermined depth is formed on the 1 st surface Wa side of the semiconductor wafer W by using a rotary blade such as a dicing device. The dividing grooves 30b are gaps for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30b are schematically indicated by thick lines in the drawing).

Next, as shown in fig. 10 (c), the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 is peeled from the semiconductor wafer W.

Next, as shown in fig. 10 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while being held on the wafer processing tape T3 (wafer thinning step). Through this wafer thinning step, in the present embodiment, the semiconductor wafer 30B capable of being singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30B has a portion (connection portion) for connecting portions of the wafer to be singulated into the plurality of semiconductor chips 31 on the 2 nd surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30B, i.e., the distance between the 2 nd surface Wb of the semiconductor wafer 30B and the 2 nd surface Wb-side tip of the dividing groove 30B is, for example, 1 to 30 μm. The semiconductor wafer 30B produced as described above may be bonded to the dicing tape X with an adhesive film in place of the semiconductor wafer 30A, and the above-described steps may be performed with reference to fig. 5 to 9.

Fig. 11 (a) and 11 (B) show a 1 st expanding step (cold expanding step) performed after the semiconductor wafer 30B is bonded to the dicing tape X with an adhesive film. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with an adhesive film and raised, and the dicing tape 10 with the dicing tape X with an adhesive film to which the semiconductor wafer 30B is bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30B. In the cold spreading step, the semiconductor wafer 30B is cut at a portion which is thin and is likely to be broken, and is singulated into the semiconductor chips 31 (i.e., the wafer and the adhesive film are cut by the half-cut blade). At the same time, in the present step, in the adhesive film 20 which is in close contact with the pressure-sensitive adhesive layer 12 of the spread dicing tape 10, the deformation is suppressed in the regions in which the semiconductor chips 31 are in close contact, while such a deformation suppressing action is not generated at the positions facing the dividing grooves between the semiconductor chips 31, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the adhesive film 20 is cut at a position facing the dividing groove between the semiconductor chips 31. The semiconductor chip 31 with the adhesive film thus obtained is subjected to the mounting step in the semiconductor device manufacturing process after the above-described pickup step with reference to fig. 8.

In the present method for manufacturing a semiconductor device, the wafer thinning step shown in fig. 12 may be performed instead of the wafer thinning step described above with reference to fig. 10 (d). After the above-described process with reference to fig. 10C, in the wafer thinning step shown in fig. 12, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state of being held on the wafer processing tape T3, and the semiconductor wafer segment 30C (wafer in a form of being cut by a blade) including the plurality of semiconductor chips 31 and held on the wafer processing tape T3 is formed. In this step, a method of grinding the wafer until the dividing groove 30b itself is exposed on the 2 nd surface Wb side (the 1 st method) may be adopted, or the following method may be adopted: and a method (method 2) of grinding the wafer from the 2 nd surface Wb side until the wafer reaches the dividing grooves 30b, and then generating cracks between the dividing grooves 30b and the 2 nd surface Wb by a pressing force of the rotating grindstone against the wafer, thereby forming semiconductor wafer divided bodies 30C. The depth of the dividing groove 30b formed as described above with reference to fig. 10 (a) and 10 (b) from the 1 st surface Wa is determined as appropriate according to the method used. Fig. 12 schematically shows the dividing groove 30b by the 1 st method or the dividing groove 30b by the 2 nd method and the crack connected thereto by a thick line. The semiconductor wafer divided body 30C thus produced may be bonded to the dicing tape X with an adhesive film instead of the semiconductor wafer 30A or the semiconductor wafer 30B, and then the above-described steps with reference to fig. 5 to 9 may be performed.

Fig. 13 (a) and 13 (b) show a 1 st expanding step (cold expanding step) performed after the semiconductor wafer segment 30C is bonded to the dicing tape X with an adhesive film. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the dicing tape X with an adhesive film in the drawing and raised, and the dicing tape 10 with the adhesive film of the semiconductor wafer segment 30C bonded thereto is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer segment 30C. In the adhesive film 20 that adheres to the pressure-sensitive adhesive layer 12 of the spread dicing tape 10, the cold spreading step suppresses deformation in the regions of the semiconductor wafer divided bodies 30C where the semiconductor chips 31 adhere to each other, and does not generate such a deformation suppressing effect at the positions facing the dividing grooves 30b between the semiconductor chips 31, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the adhesive film 20 is cut at a position facing the dividing groove 30b between the semiconductor chips 31 (i.e., the wafer cut by the blade is cut by the adhesive film). The semiconductor chip 31 with the adhesive film thus obtained is subjected to the above-described pickup step with reference to fig. 8, and then subjected to a mounting step in a semiconductor device manufacturing process.

The dicing tape X with an adhesive film has a ratio of the 2 nd peel adhesion to the 1 st peel adhesion of 300mJ/cm at a temperature of 22 ℃ of 0.8 to 2, preferably 0.9 to 1.8²The 1 st peel adhesion between the pressure-sensitive adhesive layer 12 and the adhesive film 20 in the 1 st test piece irradiated with ultraviolet rays, which is measured by a T-type peel test at 23 ℃ and a peel speed of 300 mm/min, and the 2 nd peel adhesion is 300mJ/cm at a temperature of 60 ℃²The 2 nd peel adhesion force between the pressure-sensitive adhesive layer 12 and the adhesive film 20 in the 2 nd test piece irradiated with ultraviolet ray, which was measured by a T-type peel test under the conditions of 23 ℃ and a peel speed of 300 mm/min. When the temperature dependency of the decrease in the adhesive force due to the ultraviolet irradiation is limited to the above-described range in the ultraviolet-curable adhesive layer 12 of the dicing tape 10, the balance between the adhesive force before the ultraviolet irradiation (adhesive force before UV irradiation) and the adhesive force after the ultraviolet irradiation (adhesive force after UV irradiation) in the ultraviolet irradiation step that actually accompanies the change in the environmental temperature is easily achieved, and therefore, it is easy to achieve both a relatively high adhesive force required for each of the above-described spreading steps for cleaving the adhesive film 20 on the dicing tape 10 and the wafer and a relatively low adhesive force required for the above-described pickup step for picking up the semiconductor chip with the adhesive film from the dicing tape 10. The present inventors have obtained such findings. Specifically, the examples and comparative examples are described below.

The above-mentioned constitution of the ratio of 2 or less, preferably 1.8 or less is about the adhesive force of the pressure-sensitive adhesive layer 12, and is not only suitable for securing a sufficiently strong adhesive force before UV irradiation but also for practically using an adhesive force after UV irradiation which is required in the pickup step and is sufficiently weak when subjected to UV irradiation under a high temperature environment of about 60 ℃. The pressure-sensitive adhesive layer 12 in which the relatively high adhesive force required in the expanding step is sufficiently secured is suitable for suppressing the semiconductor chip 31 with the adhesive film on the dicing tape 10 from floating from the dicing tape 10 during the period from the expanding step to the ultraviolet irradiation step.

As described above, the dicing tape X with an adhesive film is suitable for satisfactorily cutting the adhesive film 20 on the dicing tape 10 in the expanding step, and for satisfactorily picking up the semiconductor chip 31 with an adhesive film after cutting in the picking-up step while suppressing the floating of the semiconductor chip from the dicing tape 10.

The 1 st peel adhesion of the dicing tape X with an adhesive film is preferably 0.03 to 0.15N/20 mm. Such a configuration is preferable for limiting the adhesive strength of the pressure-sensitive adhesive layer 12 after UV irradiation in consideration of the actual change in the environmental temperature in the ultraviolet irradiation step to a practical range.

In the dicing tape X with an adhesive film, the peel adhesion (3 rd peel adhesion) between the pressure-sensitive adhesive layer 12 and the adhesive film 20 as measured by a T-type peel test at 23 ℃ and a peel speed of 300 mm/min is preferably 1.5 to 4.5N/20mm as described above. Such a configuration is suitable for suppressing the semiconductor chip 31 with the adhesive film on the dicing tape 10 from floating from the dicing tape 10 during the period from the expanding step for dicing to the ultraviolet irradiation step. This configuration is suitable for practical use of the pre-UV-irradiation adhesive strength of the pressure-sensitive adhesive layer 12 and for limiting the post-UV-irradiation adhesive strength in consideration of the actual change in the environmental temperature in the ultraviolet irradiation step to a practical range.

The peel adhesion (4 th peel adhesion) between the pressure-sensitive adhesive layer 12 and the adhesive film 20 in the dicing tape X with an adhesive film, as measured by a T-peel test at-5 ℃ and a peel speed of 300 mm/min, is preferably 0.5 to 2N/20mm as described above. Such a configuration is suitable for satisfactorily cutting the adhesive film 20 on the dicing tape 10 in the spreading step for cutting the dicing tape using the adhesive film with tape at a low temperature of, for example, 0 ℃. This configuration is suitable for practical use of the pre-UV-irradiation adhesive strength of the pressure-sensitive adhesive layer 12 and for limiting the post-UV-irradiation adhesive strength in consideration of the actual change in the environmental temperature in the ultraviolet irradiation step to a practical range.

The storage modulus (tensile storage modulus) at 25 ℃ of the adhesive film 20 in the dicing tape X with an adhesive film is preferably 1 to 5GPa, and more preferably 1.2 to 4GPa, as described above. Such a configuration is suitable for ensuring adhesion of the adhesive film 20 to the pressure-sensitive adhesive layer 12 in a temperature range of room temperature or its vicinity.

The storage modulus at-5 ℃ of the adhesive film 20 in the dicing tape X with an adhesive film is preferably 3 to 5GPa, and more preferably 3.5 to 4.5GPa, as described above. Such a configuration is suitable for ensuring the cuttability of the adhesive film 20 under a low temperature condition of, for example, 0 ℃.

The dicing tape 10 of the dicing tape X with the adhesive film preferably has a tensile stress of 3 to 12MPa, more preferably 3.5 to 11.5MPa at a strain value of 20% in a tensile test performed on a dicing tape test piece having a width of 10mm under conditions of an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min as described above. Such a configuration is suitable for satisfactorily cutting the adhesive film 20 on the dicing tape 10 in the cutting and spreading step under low temperature conditions.

Examples

[ example 1 ]

Production of cutting belt

In a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device, a mixture containing 54 parts by mole of 2-ethylhexyl acrylate (2EHA), 18 parts by mole of 2-hydroxyethyl acrylate (HEA), 14 parts by mole of Acryloylmorpholine (ACMO), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 61 ℃ for 6 hours under a nitrogen atmosphere (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.2 parts by mass per 100 parts by mass of the monomer component, and the content of toluene was 65 parts by mass per 100 parts by mass of the monomer component. By the polymerization reaction, an acrylic polymer P is obtained₁The polymer solution of (1). Then, the acrylic polymer P is added₁OfAfter 14 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI) was added to the solution, the mixture was stirred at 50 ℃ for 48 hours under an air atmosphere (addition reaction). Thus, an acrylic polymer P having a methacryloyl group in the side chain was obtained₂The polymer solution of (1). Next, the acrylic polymer P was added to the polymer solution₂100 parts by mass of a crosslinking agent (trade name "CORONATE L", polyisocyanate compound, manufactured by tokyo co., ltd.) and 5 parts by mass of a photopolymerization initiator (trade name "Irgacure 369", manufactured by BASF) were mixed to obtain an adhesive composition. Next, an adhesive composition was applied to the silicone release-treated surface of the PET separator having the silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 120 ℃ for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET separator. Then, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB 0103", thickness 125 μm, manufactured by shoji co., ltd.) was attached to the exposed surface of the pressure-sensitive adhesive layer using a laminator at room temperature. In the same manner as above, a dicing tape of example 1 including a substrate and an adhesive layer was produced. Table 1 shows the composition of the pressure-sensitive adhesive layer of the Dicing Tape (DT) in example 1 and in each example and each comparative example described later. In table 1, the molar ratio between the monomers is described with respect to the constituent monomers of the Acrylic Polymer (AP), and the mass ratio with respect to 100 parts by mass of the acrylic polymer is described with respect to the crosslinking agent (the ratio of ACMO to 2EHA is also described with respect to the monomer composition).

Production of adhesive film

Mixing acrylic resin A₁80 parts by mass of (trade name "TEISAN RESIN SG-P3", weight average molecular weight 85 ten thousand, glass transition temperature 12 ℃, manufactured by Nagase ChemteX Corporation), 20 parts by mass of a phenol resin (trade name "MEH-7851 SS", manufactured by Minghuai Kabushiki Kaisha), and 50 parts by mass of an inorganic filler (trade name "SO-25", spherical silica, manufactured by Admatech Corporation) were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass. Use ofApplicator an adhesive composition was applied to a silicone release-treated surface of a PET separator (thickness 38 μm) having a silicone release-treated surface to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 130 ℃ for 2 minutes to prepare an adhesive film of example 1 having a thickness of 10 μm on a PET separator. Table 1 shows compositions (mass ratios) of the adhesive films in example 1 and in each of examples and comparative examples described later.

Production of dicing tape with adhesive film

The adhesive film of example 1 with the PET spacer was punched out into a disc shape having a diameter of 330 mm. Next, after the PET separator was peeled from the dicing tape, the adhesive layer exposed in the dicing tape was bonded to the adhesive film with the PET separator using a roll laminator. In this bonding, the bonding speed was set to 10 mm/min, the temperature condition was set to 23 ℃ and the pressure condition was set to 0.15 MPa. Then, the dicing tape bonded to the adhesive film in this manner was punched out into a circular disk shape having a diameter of 370mm so that the center of the dicing tape coincides with the center of the adhesive film. In the above manner, a dicing tape with an adhesive film of example 1 having a laminated structure including the dicing tape and the adhesive film was produced.

[ example 2 ]

Production of cutting belt

In a reaction vessel equipped with a condenser, a nitrogen introduction tube, a thermometer, and a stirring device, a mixture containing 30 parts by mole of 2-ethylhexyl acrylate (2EHA), 27 parts by mole of 4-hydroxybutyl acrylate (4HBA), 23 parts by mole of Acryloylmorpholine (ACMO), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 61 ℃ for 6 hours under a nitrogen atmosphere (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.2 parts by mass per 100 parts by mass of the monomer component, and the content of toluene was 65 parts by mass per 100 parts by mass of the monomer component. By the polymerization reaction, an acrylic polymer P is obtained₃The polymer solution of (1). Then, the acrylic polymer P is added₃To the solution was added 20 parts by mole of 2-methacryloyl groupAfter the addition of oxyethyl isocyanate (MOI), the mixture was stirred at 50 ℃ for 48 hours under an air atmosphere (addition reaction). Thus, an acrylic polymer P having a methacryloyl group in the side chain was obtained₄The polymer solution of (1). Then, to the polymer solution was added a solution corresponding to the acrylic polymer P₄100 parts by mass of a crosslinking agent (trade name "CORONATE L", polyisocyanate compound, manufactured by tokyo co., ltd.) and 5 parts by mass of a photopolymerization initiator (trade name "Irgacure 369", manufactured by BASF) were mixed to obtain an adhesive composition. Next, an adhesive composition was applied to the silicone release-treated surface of the PET separator having the silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 120 ℃ for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET separator. Then, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "NED 125", thickness 125 μm, manufactured by GUNZE company) was laminated on the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. In the above operation, a dicing tape of example 2 comprising a substrate and an adhesive layer was produced.

Production of adhesive film

Mixing acrylic resin A₁90 parts by mass (trade name "TEISAN RESIN SG-P3", manufactured by Nagase ChemteXCorption), 10 parts by mass of a phenol resin (trade name "MEH-7851 SS", manufactured by Minghuazai Kabushiki Kaisha), and 50 parts by mass of an inorganic filler (trade name "SO-25", manufactured by Admatech Corporation) were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass. An adhesive composition was applied to a silicone release-treated surface of a PET separator (thickness 38 μm) having a silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 130 ℃ for 2 minutes to prepare an adhesive film of example 2 having a thickness of 10 μm on a PET separator.

Production of dicing tape with adhesive film

A dicing tape with an adhesive film of example 2 was produced in the same manner as the dicing tape with an adhesive film of example 1, except that the dicing tape and the adhesive film of example 2 were used instead of the dicing tape and the adhesive film of example 1.

[ example 3 ]

A dicing tape with an adhesive film of example 3 was produced in the same manner as the dicing tape with an adhesive film of example 1 except that the amount of 2EHA was changed from 54 mol parts to 36 mol parts, the amount of HEA was changed from 18 mol parts to 20 mol parts, 10 mol parts of 4HBA was used, the amount of ACMO was changed from 14 mol parts to 9 mol parts, the amount of MOI was changed from 14 mol parts to 25mol parts, and the amount of crosslinking agent was changed from 0.8 mass parts to 3 mass parts in the formation of the adhesive layer of the dicing tape.

[ comparative example 1 ]

A dicing tape of comparative example 1 was produced in the same manner as the dicing tape of example 1 except that the amount of 2EHA was changed from 54 mol parts to 76 mol parts, the amount of HEA was changed from 18 mol parts to 14 mol parts, ACMO was not used, the amount of MOI was changed from 14 mol parts to 10 mol parts, the amount of the crosslinking agent was changed from 0.8 mass part to 0.4 mass part, and a polyolefin base material (trade name "infu 9807", manufactured by shochu textile co., ltd.) was used instead of the EVA base material in forming the dicing tape adhesive layer.

Production of adhesive film

Mixing acrylic resin A₂90 parts by mass (trade name "TEISAN RESIN SG-708-6", manufactured by Nagase ChemteXCorption), 10 parts by mass of a phenol resin (trade name "MEH-7851 SS", manufactured by Mitsuka chemical Co., Ltd.), and 50 parts by mass of an inorganic filler (trade name "SO-25", manufactured by Admatech Corporation) were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass. An adhesive composition was applied to a silicone release-treated surface of a PET separator (thickness 38 μm) having a silicone release-treated surface using an applicator to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 130 ℃ for 2 minutes to prepare an adhesive film of comparative example 1 having a thickness of 10 μm on a PET separator.

Production of dicing tape with adhesive film

A dicing tape with an adhesive film of comparative example 1 was produced in the same manner as the dicing tape with an adhesive film of example 1, except that the dicing tape and the adhesive film of comparative example 1 were used instead of the dicing tape and the adhesive film of example 1.

[ comparative example 2 ]

In the formation of the dicing tape adhesive layer, the dicing tape with the adhesive film of comparative example 2 was produced in the same manner as the dicing tape with the adhesive film of example 1 except that the amount of 2EHA was changed from 54 parts by mol to 65 parts by mol, the amount of HEA was changed from 18 parts by mol, the amount of ACMO was changed from 14 parts by mol to 8 parts by mol, the amount of MOI was changed from 14 parts by mol to 8 parts by mol, the amount of the crosslinking agent was changed from 0.8 parts by mass to 5 parts by mass, and a base material made of polyolefin (trade name "INFUSE 9530", manufactured by kyowski co) was used instead of the base material made of EVA.

Adhesive force after UV irradiation (22 ℃ C.)

The dicing tapes with adhesive films of examples 1 to 3 and comparative examples 1 and 2 were examined for peel adhesion between the adhesive layer of the dicing tape and the adhesive film, which were subjected to ultraviolet irradiation at 22 ℃. First, the adhesive layer of the dicing tape was irradiated from the base material side of the dicing tape in the dicing tape with an adhesive film with a high-pressure mercury lamp at 22 ℃ to 300mJ/cm²(irradiation intensity 150mW/cm²2 seconds). Then, after the PET separator on the adhesive film side was peeled off from the dicing tape with the adhesive film, a backing tape (product name "BT-315", manufactured by ritonan electric corporation) was attached to the adhesive film side. Then, a test piece having a size of 50mm in width and 120mm in length was cut out from the dicing tape with an adhesive film attached with a backing tape. Then, the test piece was subjected to a T-type peel test using a T-type peel tester (trade name "Autograph AG-20 KNSD", manufactured by Shimadzu corporation), and the peel adhesion F was measured₁(N/20 mm). In this measurement, the temperature condition was set to 23 ℃ and the peeling speed was set to 300 mm/min. The results are shown in table 1.

Adhesive force after UV irradiation (60 ℃ C.)

The dicing tapes with adhesive films of examples 1 to 3 and comparative examples 1 and 2 were examined for peel adhesion between the adhesive layer of the dicing tape and the adhesive film, which were subjected to ultraviolet irradiation at 60 ℃. First, a dicing tape with an adhesive film was placed on a hot plate with a surface temperature adjusted to 60 ℃ so that the adhesive film side (with a PET separator) was in contact with the hot plate, and after leaving for 10 seconds, the adhesive layer of the dicing tape was irradiated with 300mJ/cm of light from the base material side of the dicing tape in the dicing tape with the adhesive film under a temperature condition of 60 ℃ by a high-pressure mercury lamp²(irradiation intensity 150mW/cm²2 seconds). Then, with respect to the dicing tape with the adhesive film, the PET separator on the adhesive film side was peeled off, and then a backing tape (trade name "BT-315", manufactured by hitto electrical co., ltd.) was attached to the adhesive film side. Thereafter, a test piece having a size of 50mm in width and 120mm in length was cut out from the dicing tape with an adhesive film attached with a backing tape. Then, the test piece was subjected to a T-type peel test using a T-type peel tester (trade name "Autograph AG-20 KNSD", manufactured by Shimadzu corporation) to measure peel adhesion F₂(N/20 mm). In this measurement, the temperature condition was set to 23 ℃ and the peeling speed was set to 300 mm/min. The results are shown in table 1. Further, the above peel adhesion force F is described₂Relative to peel adhesion F₁The ratio of (a) to (b).

Adhesive force before UV irradiation

The dicing tapes with adhesive films of examples 1 to 3 and comparative examples 1 and 2 were examined for peel adhesion between the adhesive layer of the dicing tape and the adhesive film before being irradiated with ultraviolet light. First, a PET separator on the adhesive film side was peeled off from a dicing tape with an adhesive film, and then a backing tape (product name "BT-315", manufactured by ritonan electric corporation) was attached to the adhesive film side. Then, a test piece having a size of 50mm in width and 120mm in length was cut out from the dicing tape with an adhesive film attached with a backing tape. Then, the test piece was subjected to a T-type peel test using a T-type peel tester (trade name "Autograph AG-20 KNSD", manufactured by Shimadzu corporation) to measure peel adhesion F₃(N/20 mm). Book testingIn the centering, the temperature condition was set at 23 ℃ and the peeling speed was set at 300 mm/min. The results are shown in table 1.

In addition, the temperature conditions in the T-peel test were changed from 23 ℃ to-5 ℃ in the dicing tapes with adhesive films of examples 1 to 3 and comparative examples 1 and 2, and in addition, the tape had a peel adhesion force F₃The same procedure as in (1) was used to measure the peel adhesion force F between the dicing tape pressure-sensitive adhesive layer and the adhesive film before exposure to ultraviolet light₄. The results are shown in table 1.

[ tensile stress of the cutting tape ]

Tensile stress was examined on the dicing tape of each of the dicing tapes with adhesive films of examples 1 to 3 and comparative examples 1 and 2. First, test pieces having a width of 10mm and a length of mm were cut from a dicing tape. Then, the test piece was subjected to a tensile test using a tensile tester (trade name "Autograph AGS-J", manufactured by shimadzu corporation), and the tensile stress generated at a strain value of 20% was measured. In the tensile test, the initial distance between chucks was 100mm, the temperature condition was-5 ℃ and the tensile speed was 300 mm/min. The average value of the measurement values of tensile test pieces derived from the same dicing tape was defined as the tensile stress at-5 ℃ of the dicing tape. The values are shown in Table 1.

[ storage modulus of adhesive film ]

The adhesive films with dicing tapes of the adhesive films of examples 1 to 3 and comparative examples 1 and 2 were prepared by obtaining a storage modulus at 25 ℃ (tensile storage modulus) and a storage modulus at-5 ℃ (tensile storage modulus) based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring apparatus (trade name "RSAIII", manufactured by TA Instruments Inc.)z, the dynamic strain is 0.005%, and the temperature rise rate is 10 ℃/min. For each adhesive film, the storage modulus E at 25 ℃ is measured₁(GPa) and storage modulus E at-5 DEG C₂(GPa) is shown in Table 1.

[ bonding step and expansion step ]

Using the dicing tapes with adhesive films of examples 1 to 3 and comparative examples 1 and 2, the following bonding step, 1 st expanding step for cutting (cold expanding step), and 2 nd expanding step for separation (room temperature expanding step) were performed.

In the bonding step, a semiconductor wafer held on a wafer processing tape (trade name "UB-3083D", manufactured by ritonan electric corporation) is bonded to the adhesive layer of the dicing tape with an adhesive film, and thereafter the wafer processing tape is peeled off from the semiconductor wafer. The semiconductor wafer was half-cut and thinned to form dividing grooves (25 μm wide, 10mm × 10mm in each division) for singulation and to have a thickness of 50 μm. In the bonding, a laminator was used, and the bonding speed was 10 mm/sec, the temperature condition was 60 ℃ and the pressure condition was 0.15 MPa. In this step, the surface of the semiconductor wafer opposite to the surface on which the dicing grooves are formed is bonded to the adhesive layer in the dicing tape with the adhesive film.

The cold expansion step was performed using a chip separation apparatus (trade name "Die Separator DDS 2300", manufactured by DISCO inc.) using a cold expansion unit. Specifically, after a ring frame is attached to the dicing tape with the adhesive film of the semiconductor wafer and/or the adhesive layer thereof, the dicing tape with the adhesive film is set in an apparatus, and the dicing tape with the adhesive film of the semiconductor wafer is spread by a cold spreading unit of the apparatus. In the cold expansion step, the temperature was-5 ℃, the expansion rate was 200 mm/sec, and the expansion amount was 12 mm. Through this step, the semiconductor wafer is singulated on the dicing tape to obtain a plurality of semiconductor chips with adhesive layers.

The normal temperature expansion step was performed using a chip separation apparatus (trade name "Die Separator DDS 2300", manufactured by DISCO inc.) using a normal temperature expansion unit. Specifically, the dicing tape with the dicing tape of the adhesive film for semiconductor wafer having undergone the cold-expanding step is expanded by the normal temperature expanding unit of the apparatus. In the normal temperature expansion step, the temperature was 23 ℃, the expansion rate was 1 mm/sec, and the expansion amount was 10 mm. Then, a heat shrinkage treatment (heat shrinkage) is performed on an edge portion of the dicing tape on the outer side of the workpiece bonding region. In this treatment, the temperature of hot air for heating was 250 ℃, the air volume thereof was 40L/min, the heating distance (distance from the hot air outlet to the object to be heated) was 20mm, and the rotation speed of the stage holding the dicing tape with the workpiece was 3 °/sec.

Evaluation of cuttability

For the adhesive layer of the dicing tape with the adhesive films of the respective work pieces having undergone the above process, the pressure-sensitive adhesive layer was passed over the dicing tape at a temperature of 20 ℃ at 300mJ/cm²Ultraviolet irradiation of (3). Thereafter, an attempt was made to pick up the semiconductor chip with the adhesive film from the dicing tape using a die bonding apparatus (trade name "diebond SPA-300", manufactured by seikagawa corporation) (pickup step). In this step, the number of chips for which pickup was attempted was set to 100, and the pickup height was set to 350 μm. Regarding the cuttability of the adhesive film, the case where the number of chips that can be picked up in the present step in the form of semiconductor chips with an adhesive film among 100 semiconductor chips that have been tried to be picked up is 99 or more was evaluated as "good", and the case where the number of chips that can be picked up in the form of semiconductor chips with an adhesive film is 98 or less was evaluated as "bad". The results are shown in table 1.

Evaluation of Floating inhibition

After each dicing tape with an adhesive film having undergone the above-described process (process up to thermal shrinkage) and attached to the workpiece was left standing at room temperature for 3 hours, the adhesive film in the semiconductor chip with an adhesive film was observed with a microscope to float from the dicing tape. Then, the ratio of the area of the floating generated between the dicing tape and the adhesive film to the total area of the region of the semiconductor chip group to be formed with the adhesive film on the dicing tape after the two spreading steps is determined. The occurrence of floating (floating suppression) after the expanding step was less likely, and the case where the area of the generated floating was less than 30% was evaluated as "good", and the case where the area was 30% or more was evaluated as "bad". The results are shown in table 1.

Evaluation of pickup Property after Normal temperature/high temperature UV irradiation

For the adhesive layer of the dicing tape with adhesive films each having the work piece subjected to the above-described process (process up to heat shrinkage), passing over the dicing tape was carried out at a temperature of 25 ℃ at 300mJ/cm²Ultraviolet irradiation of (3). Thereafter, an attempt was made to pick up the semiconductor chip with the adhesive film from the dicing tape using a die bonding apparatus (trade name "diebond SPA-300", manufactured by seikagawa corporation) (1 st pick-up step). In this step, the number of chips for which picking was attempted was 50, and the picking height was 350 μm.

The dicing tapes (with the work) with the adhesive films of examples 1 to 3 and comparative examples 1 and 2, which were separately prepared and subjected to the above-described process (process until thermal shrinkage), were set on a hot plate having a set temperature of 60 ℃ so that the work and/or semiconductor chip side thereof was in contact with the hot plate surface. The adhesive layer of the dicing tape for the tape-bonded film was passed over the dicing tape in such a heated state at 60 ℃ at 300mJ/cm²Ultraviolet irradiation of (3). Thereafter, an attempt was made to pick up the semiconductor chip with the adhesive film from the dicing tape using a die bonding apparatus (trade name "diebond SPA-300", manufactured by seikagawa corporation) (2 nd pick-up step). In this step, the number of chips for which picking was attempted was 50, and the picking height was 350 μm.

With respect to the pick-up property of the semiconductor chip with the adhesive film from the dicing tape after the ultraviolet irradiation of the dicing tape adhesive layer, the case where all 50 semiconductor chips with the adhesive film as the pick-up objects in each of the above-described 1 st pick-up step and 2 nd pick-up step could be picked up was evaluated as "good", and the case where even one semiconductor chip with the adhesive film could not be picked up out of the total number of pick-up objects 100 in the two pick-up steps was evaluated as "bad". The results are shown in table 1. In the dicing tapes with an adhesive film according to comparative examples 1 and 2, specifically, the number of semiconductor chips with an adhesive film that could not be picked up in the 2 nd picking-up step was 1 or more.

[ TABLE 1 ]

Claims

1. A dicing tape with an adhesive film, comprising:

a dicing tape having a laminated structure comprising a substrate and an ultraviolet-curable adhesive layer, and

an adhesive film releasably adhered to the adhesive layer of the dicing tape,

the ratio of the 2 nd peel adhesion to the 1 st peel adhesion is 0.8-2, and the 1 st peel adhesion is subjected to 300mJ/cm at a temperature of 22 DEG C²The 1 st peel adhesion between the pressure-sensitive adhesive layer and the adhesive film in the 1 st test piece irradiated with ultraviolet rays, which is measured by a T-type peel test at 23 ℃ and a peel speed of 300 mm/min, wherein the 2 nd peel adhesion is 300mJ/cm at a temperature of 60 ℃²The 2 nd peel adhesion force between the pressure-sensitive adhesive layer and the adhesive film in the 2 nd test piece irradiated with ultraviolet ray, which was measured by a T-type peel test under the conditions of 23 ℃ and a peel speed of 300 mm/min.

2. The dicing tape with an adhesive film according to claim 1, wherein the 1 st peel adhesion is 0.03 to 0.15N/20 mm.

3. The dicing tape with an adhesive film according to claim 1 or 2, wherein the peel adhesion between the pressure-sensitive adhesive layer and the adhesive film is 1.5 to 4.5N/20mm as measured by a T-peel test at 23 ℃ and a peel speed of 300 mm/min.

4. The dicing tape with an adhesive film according to claim 1 or 2, wherein the peel adhesion between the pressure-sensitive adhesive layer and the adhesive film is 0.5 to 2N/20mm as measured by a T-peel test at-5 ℃ and a peel speed of 300 mm/min.

5. The dicing tape with an adhesive film according to claim 1 or 2, wherein the adhesive film has a storage modulus at 25 ℃ of 1 to 5 GPa.

6. The dicing tape with an adhesive film according to claim 1 or 2, wherein the adhesive film has a storage modulus at-5 ℃ of 3 to 5 GPa.

7. The dicing tape with an adhesive film according to claim 1 or 2, wherein a tensile stress of 3 to 12MPa is exhibited at a strain value of 20% in a tensile test performed on a dicing tape test piece having a width of 10mm under conditions of an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min.