CN111748290B

CN111748290B - Dicing tape with adhesive film

Info

Publication number: CN111748290B
Application number: CN202010218433.XA
Authority: CN
Inventors: 大西谦司; 宍户雄一郎; 木村雄大; 杉村敏正; 福井章洋
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2019-03-26
Filing date: 2020-03-25
Publication date: 2023-12-01
Anticipated expiration: 2040-03-25
Also published as: KR20200115226A; CN111748290A; JP7289688B2; JP2020161642A; TWI825285B; TW202039726A

Abstract

The dicing tape with an adhesive film is suitable for satisfactorily cutting the adhesive film on the Dicing Tape (DT) in the expanding process using the dicing tape with an adhesive film for obtaining semiconductor chips with an adhesive film, and is suitable for suppressing the semiconductor chips with an adhesive film after the cutting from floating from DT and achieving satisfactory pickup in the pickup process. A dicing tape (X) with an adhesive film is provided with a dicing tape (10) and an adhesive film (20). The adhesive film (20) is peelably adhered to the adhesive layer (12) provided on the dicing tape (10). Relative to 300mJ/cm at 22 DEG C ² The peeling adhesive force between the adhesive layer (12) and the adhesive film (20) of the ultraviolet-irradiated test piece of (2) was 300mJ/cm at 60 DEG C ² The ratio of the peel adhesion between the adhesive layer (12) and the adhesive film (20) of the ultraviolet-irradiated test piece is 0.8-2.

Description

Dicing tape with adhesive film

Technical Field

The present invention relates to a dicing tape of a tape adhesive film that can be used in a manufacturing process of a semiconductor device.

Background

In the manufacturing process of a semiconductor device, a dicing tape with an adhesive film is sometimes used in order to obtain a semiconductor chip with an adhesive film having a size equivalent to that of a chip for die bonding, that is, a semiconductor chip with an adhesive film. The dicing tape with the adhesive film has, for example: the dicing tape includes a base material and an adhesive layer, and an adhesive film that is releasably adhered to the adhesive layer side thereof. The adhesive film has a disk shape exceeding the size of a semiconductor wafer as a work, and a dicing tape having a disk shape exceeding the size of the adhesive film, for example, is attached concentrically to the adhesive layer side thereof.

As one of methods for obtaining a semiconductor chip with an adhesive film using a dicing tape with an adhesive film, a method is known which comprises the steps of: and a step for expanding a dicing tape in the dicing tape with the adhesive film to sever the adhesive film. In this method, first, a semiconductor wafer is bonded to an adhesive film of a dicing tape with the adhesive film. The semiconductor wafer is processed such that it can be singulated into a plurality of semiconductor chips by being cut together with the dicing of the adhesive film, for example. Next, in a predetermined expanding apparatus, the dicing tape of the dicing tape is expanded in the radial direction thereof in order to sever the adhesive film so that a plurality of adhesive film chips each adhering to the semiconductor chip are generated from the adhesive film on the dicing tape (expanding step). In this expanding step, the dicing is also performed at a position on the adhesive film corresponding to the dicing position of the adhesive film of the semiconductor wafer, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing tape with the adhesive film and/or the dicing tape. Then, in a predetermined dicing bonding apparatus including a pick-up step mechanism or the like, each semiconductor chip is picked up from the dicing tape by being lifted up from the lower side of the dicing tape by the pin member of the pick-up mechanism together with an adhesive film having a size corresponding to the chip, which is adhered thereto (pick-up step). Thus, a semiconductor chip with an adhesive film was obtained. The semiconductor chip with the adhesive film is fixedly adhered to an adherend such as a mounting substrate by die bonding via the adhesive film. For example, the technique of cutting a tape with an adhesive film used in the above-described operation is described in, for example, patent documents 1 and 2 below.

Prior art literature

Patent literature

Patent document 1: japanese patent laid-open No. 2007-2173

Patent document 2: japanese patent application laid-open No. 2010-177401

Disclosure of Invention

Problems to be solved by the invention

Conventionally, a dicing tape having an adhesive film with ultraviolet-curable adhesive layer is sometimes used as the dicing tape adhesive layer. In the process of manufacturing a semiconductor device using such dicing tape with adhesive film, the adhesive force of the dicing tape adhesive layer of the semiconductor chip with a plurality of adhesive films is remarkably reduced by UV irradiation in the ultraviolet irradiation apparatus before the pickup step (ultraviolet irradiation step).

The ultraviolet irradiation device includes, for example, a chamber for performing UV irradiation. The workpiece to be irradiated with UV (for example, dicing tape for holding the tape adhesive film of the semiconductor chips obtained by singulation) is set in a chamber in a state of being housed in a plurality of cassettes (magazines), for example, and is subjected to an ultraviolet irradiation process. In a semiconductor device manufacturing line, there are cases where: the ultraviolet irradiation apparatus is continuously operated, and for example, such an ultraviolet irradiation process is sequentially repeated for each new set of UV irradiation target workpieces.

However, when the ultraviolet irradiation device is continuously operated, the ambient temperature in the chamber in which the UV irradiation is continuously or intermittently performed tends to be increased. The temperature in the chamber at the time of UV irradiation affects the degree of UV curing of the UV curable dicing tape adhesive layer of the dicing tape with adhesive film, and therefore affects the degree of decrease in the adhesive force of the adhesive layer. Specifically, there is a tendency that: the higher the temperature in the chamber at the time of UV irradiation, the lower the progress of ultraviolet curing of the ultraviolet curable dicing tape adhesive layer of the dicing tape adhesive film, and the lower the degree of decrease in adhesive force.

Therefore, conventionally, in a dicing tape (semiconductor chip with a singulated adhesive film on the dicing tape) with an adhesive film subjected to UV irradiation under a high temperature environment in an ultraviolet irradiation process, the semiconductor chip with an adhesive film may not be picked up properly from the dicing tape in a subsequent pickup process.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a dicing tape with an adhesive film, which is suitable for satisfactorily cutting the adhesive film on the dicing tape in an expanding process using the dicing tape with an adhesive film for obtaining semiconductor chips with an adhesive film, and is suitable for suppressing the semiconductor chips with an adhesive film after cutting from floating from the dicing tape and achieving satisfactory pickup in a pickup process.

Solution for solving the problem

The dicing tape with an adhesive film provided by the invention is provided with a dicing tape and an adhesive film. The dicing tape has a laminated structure including a base material and an ultraviolet-curable adhesive layer. The adhesive film is peelably adhered to the adhesive layer of the dicing tape. In addition, in the dicing tape of the tape adhesive film, the ratio of the 1 st peel adhesion to the 2 nd peel adhesion of the 1 st peel adhesion, which is subjected to 300mJ/cm at a temperature of 22 ℃, is 0.8 to 2, preferably 0.9 to 1.8 ² The 1 st peel adhesion between the adhesive layer and the adhesive film in the 1 st test piece irradiated with ultraviolet rays, as measured by the T-type peel test, the 2 nd peel adhesion being 300mJ/cm at a temperature of 60 DEG C ² The 2 nd peel adhesion between the adhesive layer and the adhesive film in the 2 nd test piece irradiated with ultraviolet rays, as measured by the T-type peel test. The 1 st test piece and the 2 nd test piece are test pieces cut from the dicing tape of the tape adhesive film, and each of the test pieces has the dicing tape and the adhesive layer detachably adhered to the ultraviolet curable adhesive layerA film. In the present invention, the ultraviolet irradiation to which the test piece is subjected means ultraviolet irradiation (irradiation from the substrate side) to the adhesive layer in the test piece across the substrate. 300mJ/cm ² For example, the ultraviolet irradiation of (C) may be performed at an irradiation intensity of 150mW/cm ² Is realized by irradiation of ultraviolet rays for 2 seconds. The T-type peel test for measuring the 1 st peel adhesion and the 2 nd peel adhesion was performed at 23℃and a peel speed of 300 mm/min. The dicing tape with the adhesive film having the above-described configuration can be used in the process of obtaining a semiconductor chip with the adhesive film in the manufacture of a semiconductor device.

As described above, the dicing tape having the adhesive film has a ratio of the 1 st peel adhesion to the 2 nd peel adhesion of 0.8 to 2, preferably 0.9 to 1.8, the 1 st peel adhesion being 300mJ/cm at a temperature of 22 DEG C ² The 1 st peel adhesion between the adhesive layer and the adhesive film in the 1 st test piece irradiated with ultraviolet rays, as measured by the T-type peel test, the 2 nd peel adhesion being 300mJ/cm at a temperature of 60 DEG C ² The 2 nd peel adhesion between the adhesive layer and the adhesive film in the 2 nd test piece irradiated with ultraviolet rays, as measured by the T-type peel test. When the temperature dependence of the decrease in the adhesive strength due to the irradiation of ultraviolet rays is limited to this range, the balance between the adhesive strength before the irradiation of ultraviolet rays (the adhesive strength before the irradiation of ultraviolet rays) and the adhesive strength after the irradiation of ultraviolet rays (the adhesive strength after the irradiation of ultraviolet rays) in the step of irradiating ultraviolet rays, which is actually accompanied by a change in the ambient temperature, is easily achieved, and therefore, it is easy to achieve both of the relatively high adhesive strength required for the dicing tape adhesive layer in the above-mentioned expanding step for cutting the adhesive film on the dicing tape from the wafer, and the relatively low adhesive strength required for the dicing tape adhesive layer in the above-mentioned picking step for picking up the semiconductor chips of the tape adhesive film from the dicing tape. The inventors have obtained the findings described above. Specifically, examples and comparative examples described below are shown.

The composition having the above ratio of 2 or less, preferably 1.8 or less is suitable for securing a sufficiently strong UV-irradiation adhesive force in the dicing tape adhesive layer, and not only the adhesive force obtained when subjected to UV irradiation in a normal temperature environment, but also the adhesive force obtained when subjected to UV irradiation in a high temperature environment of about 60 ℃ is practically used as a sufficiently weak UV-irradiation adhesive force required in the pickup step. In addition, a dicing tape adhesive layer in which a relatively high adhesive force required in the expanding process is sufficiently ensured is suitable for suppressing floating of the semiconductor chip with the adhesive film on the dicing tape from the dicing tape during the period from the expanding process to the ultraviolet irradiation process.

As described above, the dicing tape with the adhesive film is suitable for satisfactorily cutting the adhesive film on the dicing tape in the expanding process, and is suitable for achieving satisfactory pickup in the pickup process while suppressing floating of the diced tape.

The 1 st peel adhesion of the dicing tape of the tape adhesive film is preferably 0.03 to 0.15N/20mm. Such a configuration is preferable for limiting the post-UV irradiation adhesive force of the dicing tape adhesive layer in a practical range in consideration of a change in actual ambient temperature in the ultraviolet irradiation step.

The peel adhesion between the dicing tape adhesive layer and the adhesive film in the dicing tape with adhesive film, as measured by the T-type peel test at 23℃and a peel speed of 300 mm/min, is preferably 1.5 to 4.5N/20mm. Such a configuration is suitable for suppressing the floating of the semiconductor chips with the adhesive film on the dicing tape from the dicing tape during the period from the expanding step to the ultraviolet irradiation step when the dicing tape using the adhesive film is subjected to the expanding step. Further, this configuration is preferable for practical use of the pre-UV-irradiation adhesive force of the dicing tape adhesive layer and for limiting the post-UV-irradiation adhesive force in consideration of the actual ambient temperature change in the ultraviolet irradiation step to a practical range.

The peel adhesion between the adhesive layer and the adhesive film in the dicing tape with the adhesive film is preferably 0.5 to 2N/20mm as measured by the T-peel test at-5℃and a peel speed of 300 mm/min. Such a configuration is suitable for satisfactorily cutting the adhesive film on the dicing tape when the dicing tape using the adhesive film is subjected to the stretching step at a low temperature of, for example, 0 ℃. Further, this configuration is preferable for practical use of the pre-UV-irradiation adhesive force of the dicing tape adhesive layer and for limiting the post-UV-irradiation adhesive force in consideration of the actual ambient temperature change in the ultraviolet irradiation step to a practical range.

The adhesive film in the dicing tape with an adhesive film preferably has a storage modulus (tensile storage modulus) at 25℃of 1 to 5GPa, more preferably 1.2 to 4GPa. Such a configuration is preferable for ensuring the adhesion of the adhesive film to the dicing tape adhesive layer at room temperature and a temperature range around the room temperature.

The storage modulus of the adhesive film in the dicing tape with the adhesive film at-5℃is preferably 3 to 5GPa, more preferably 3.5 to 4.5GPa. Such a constitution is suitable for ensuring the severability of the adhesive film under a low temperature condition of, for example, 0 ℃ or less.

The dicing tape of the tape-bonded film preferably has a tensile stress at a strain value of 20% of 3 to 12MPa, more preferably 3.5 to 11.5MPa, in a tensile test conducted on a dicing tape test piece having a width of 10mm at an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min. Such a configuration is suitable for satisfactorily cutting the adhesive film on the dicing tape when the dicing tape using the adhesive film is subjected to the stretching step at a temperature of, for example, 0 ℃.

Drawings

Fig. 1 is a schematic cross-sectional view of a dicing tape with an adhesive film according to an embodiment of the invention.

Fig. 2 is a top view of the dicing tape of the tape adhesive film shown in fig. 1.

Fig. 3 shows a part of steps of an example of a method for manufacturing a semiconductor device using the dicing tape with adhesive film shown in fig. 1.

Fig. 4 shows a process subsequent to the process shown in fig. 3.

Fig. 5 shows a process subsequent to the process shown in fig. 4.

Fig. 6 shows a process subsequent to the process shown in fig. 5.

Fig. 7 shows a process subsequent to the process shown in fig. 6.

Fig. 8 shows a process subsequent to the process shown in fig. 7.

Fig. 9 shows a process subsequent to the process shown in fig. 8.

Fig. 10 shows a part of the process of another example of the method for manufacturing a semiconductor device using the dicing tape with adhesive film shown in fig. 1.

Fig. 11 shows a process subsequent to the process shown in fig. 10.

Fig. 12 shows a part of the steps of another example of the method for manufacturing a semiconductor device using the dicing tape with adhesive film shown in fig. 1.

Fig. 13 shows a process subsequent to the process shown in fig. 12.

Description of the reference numerals

Cutting tape of X-tape adhesive film

10. Cutting belt

11. Substrate material

12. Adhesive layer

20 21 adhesive film

W,30A,30B semiconductor wafers

30C semiconductor wafer separator

30a modified region

30b dividing groove

31. Semiconductor chip

Detailed Description

Fig. 1 is a schematic cross-sectional view of a dicing tape X with an adhesive film according to an embodiment of the invention. The dicing tape X with the adhesive film has a laminated structure including the dicing tape 10 and the adhesive film 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 12 has an adhesive surface 12a on the adhesive film 20 side. The adhesive film 20 is peelably adhered to the adhesive layer 12 of the dicing tape 10 and/or the adhesive face 12a thereof. In the present embodiment, the dicing tape 10 and the adhesive film 20 have a disk shape and are arranged concentrically as shown in fig. 2. Such dicing tape X with an adhesive film can be used in the process of obtaining semiconductor chips with an adhesive film in the manufacture of semiconductor devices.

The base material 11 of the dicing tape 10 in the dicing tape X of the adhesive film is a component that functions as a support in the dicing tape 10 and/or the dicing tape X of the adhesive film. The substrate 11 is, for example, a plastic substrate having ultraviolet transmittance, and a plastic film can be suitably used as the plastic substrate. Examples of the constituent materials of the plastic base material include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aramid, fluororesin, cellulose-based resin, and silicone resin. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The base material 11 may be formed of one material or two or more materials. The substrate 11 may have a single-layer structure or a multilayer structure. In the case where the base material 11 is formed of a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

The surface of the substrate 11 on the side of the adhesive layer 12 may be subjected to a physical treatment, a chemical treatment, or a primer treatment for improving the adhesion to the adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, sandblasting treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.

The thickness of the base material 11 is preferably 40 μm or more, and more preferably 50 μm or more, from the viewpoint of securing the strength of the base material 11 functioning as a support in the dicing tape 10 and/or the dicing tape X of the tape adhesive film. In addition, from the viewpoint of achieving moderate flexibility of the dicing tape 10 and/or the dicing tape X of the tape adhesive film, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less.

The adhesive layer 12 of the dicing tape 10 is an ultraviolet-curable adhesive layer whose adhesive force is reduced by ultraviolet irradiation. As the adhesive for forming the ultraviolet-curable adhesive layer, there is mentioned an additive type ultraviolet-curable adhesive comprising: a base polymer such as an acrylic polymer as an acrylic adhesive, and an ultraviolet-polymerizable monomer component or oligomer component having a functional group such as an ultraviolet-polymerizable carbon-carbon double bond.

The acrylic polymer preferably contains the most mass proportion of monomer units derived from (meth) acrylic esters. "(meth) acrylic" means "acrylic" and/or "methacrylic". Examples of the (meth) acrylate ester that is a monomer unit for forming an acrylic polymer, that is, the (meth) acrylate ester that is a constituent monomer of the acrylic polymer, include alkyl (meth) acrylate esters, cycloalkyl (meth) acrylate esters, and aryl (meth) acrylate esters. Examples of the alkyl (meth) acrylate include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (i.e., lauryl), tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl (meth) acrylates. Examples of cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylate. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As the constituent monomer of the acrylic polymer, one type of (meth) acrylate may be used, or two or more types of (meth) acrylates may be used. As the (meth) acrylate for the acrylic polymer, at least one selected from the group consisting of 2-ethylhexyl acrylate and lauryl (meth) acrylate is preferably used. In order to properly exhibit basic properties such as adhesiveness based on (meth) acrylic acid ester, the proportion of (meth) acrylic acid ester in the entire constituent monomers of the acrylic polymer is preferably 25mol% or more, more preferably 30mol% or more. The proportion is, for example, 70mol% or less.

The acrylic polymer may contain monomer units derived from one or two or more other monomers copolymerizable with the (meth) acrylic acid ester from the viewpoint of modification of, for example, cohesion and heat resistance. Examples of the other copolymerizable monomer used for forming the monomer unit of the acrylic polymer, that is, the other copolymerizable monomer as a constituent monomer of the acrylic polymer include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a nitrogen-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, and a phosphoric acid group-containing monomer. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the nitrogen-containing monomer include acryloylmorpholine, acrylamide, and acrylonitrile. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloxynaphthalene sulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acryloyl phosphate. As the above-mentioned copolymerizable monomer for the acrylic polymer, a hydroxyl group-containing monomer and a nitrogen-containing monomer are preferably used. As the hydroxyl group-containing monomer, at least one selected from the group consisting of 2-hydroxyethyl (meth) acrylate and 4-hydroxybutyl (meth) acrylate is preferably used. As the nitrogen-containing monomer, acryloylmorpholine is preferably used.

In the case where the acrylic polymer contains a monomer unit derived from a hydroxyl group-containing monomer, that is, in the case where the acrylic polymer contains a hydroxyl group-containing monomer as a constituent monomer thereof, the proportion of the hydroxyl group-containing monomer as a constituent monomer in the acrylic polymer is preferably 13 to 30mol%, more preferably 15 to 28mol%. Such a configuration is preferable from the viewpoint of easy control of the peeling force between the pressure-sensitive adhesive layer 12 and the adherend.

In the case where the acrylic polymer contains a monomer unit derived from a nitrogen-containing monomer, that is, in the case where the acrylic polymer contains a nitrogen-containing monomer as a constituent monomer thereof, the proportion of the nitrogen-containing monomer as a constituent monomer in the acrylic polymer is preferably 5 to 25mol%, more preferably 6 to 23mol%. Such a configuration is preferable from the viewpoint of ensuring the adhesive force of the adhesive layer 12 to the adherend.

When the acrylic polymer contains Acryloylmorpholine (ACMO) as a constituent monomer thereof, the ratio (molar ratio) of acryloylmorpholine to alkyl (meth) acrylate in the acrylic polymer is preferably 0.25 or more. Such a configuration is preferable from the viewpoint of ensuring the adhesive force of the adhesive layer 12 to the adherend. This ratio is, for example, 0.9 or less, preferably 0.8 or less from the viewpoint of achieving an excessive adhesive force of the adhesive layer 12.

The acrylic polymer may contain monomer units derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylate in order to form a crosslinked structure in its polymer skeleton. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. "(meth) acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomers may be used. In order to properly exhibit basic properties such as adhesion based on (meth) acrylic acid ester, the proportion of the polyfunctional monomer in the entire constituent monomers of the acrylic polymer is preferably 40mol% or less, and more preferably 30mol% or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the same. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. The low molecular weight substance in the adhesive layer 12 in the dicing tape 10 and/or dicing tape X of the adhesive film is preferably small from the viewpoint of high cleanliness in the manufacturing process of the semiconductor device using the dicing tape 10 and/or dicing tape X of the adhesive film, and in this case, the weight average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, more preferably 20 ten thousand to 300 ten thousand. The weight average molecular weight (Mw) of the acrylic polymer is a value in terms of standard polystyrene measured by Gel Permeation Chromatography (GPC).

The adhesive layer 12 and/or the adhesive used for forming the same may contain a crosslinking agent, for example, in order to increase the average molecular weight of the base polymer such as an acrylic polymer. Examples of the crosslinking agent that reacts with a base polymer such as an acrylic polymer to form a crosslinked structure include: a polyisocyanate compound, an epoxy compound, a polyol compound, an aziridine compound, and a melamine-based crosslinking agent as a polyfunctional isocyanate-based crosslinking agent. The crosslinking agent is preferably a polyisocyanate compound as a polyfunctional isocyanate-based crosslinking agent from the viewpoint of suppressing the temperature dependence of the adhesive force of the adhesive layer 12 due to ultraviolet irradiation (the higher the ambient temperature at the time of ultraviolet irradiation, the lower the progress of ultraviolet curing of the adhesive layer 12, and the lower the degree of adhesive force thereof tends to be).

The content of the crosslinking agent in the adhesive layer 12 and/or the adhesive composition for forming the same is preferably 0.1 part by mass or more, more preferably 0.3 part by mass or more, and still more preferably 0.5 part by mass or more, relative to 100 parts by mass of the base polymer such as the acrylic polymer. The content is preferably 5 parts by mass or less, more preferably 4 parts by mass or less, and still more preferably 3 parts by mass or less. Such a configuration is preferable from the viewpoints of adhesion to the ring frame and suppression of temperature dependence of the adhesive force decrease due to ultraviolet irradiation of the adhesive layer 12.

Examples of the ultraviolet polymerizable monomer component used for forming the ultraviolet curable adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the ultraviolet-polymerizable oligomer component used for forming the ultraviolet-curable adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and the molecular weight is preferably about 100 to 30000. The total content of the ultraviolet-polymerizable monomer component and the oligomer component in the ultraviolet-curable adhesive is determined within a range that enables the adhesive force of the formed adhesive layer 12 to be appropriately reduced, and is preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass, relative to 100 parts by mass of the base polymer such as the acrylic polymer. Further, as the additive type ultraviolet curable adhesive, for example, those disclosed in Japanese patent application laid-open No. 60-196956 can be used.

Examples of the ultraviolet-curable adhesive for the adhesive layer 12 include an internal ultraviolet-curable adhesive containing a base polymer having a functional group such as an ultraviolet-polymerizable carbon-carbon double bond in a polymer side chain, a polymer main chain, or a polymer main chain end. Such an internal type ultraviolet curable adhesive is preferable in terms of suppressing an undesired change over time in the adhesive properties of the formed adhesive layer 12 caused by movement of the low molecular weight component.

The base polymer contained in the internal ultraviolet curable adhesive is preferably a base polymer having an acrylic polymer as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be used. Examples of the method for introducing an ultraviolet polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after copolymerizing a raw material monomer including a monomer having a predetermined functional group (functional group 1), a compound having a predetermined functional group (functional group 2) capable of reacting with and bonding to the functional group 1 and an ultraviolet polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining ultraviolet polymerization of the carbon-carbon double bond.

Examples of the combination of the 1 st functional group and the 2 nd functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, a hydroxyl group and an isocyanate group, and an isocyanate group and a hydroxyl group. Among these combinations, a combination of a hydroxyl group and an isocyanate group and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of ease of reaction tracking. In addition, since the technical difficulty in producing a polymer having an isocyanate group with high reactivity is high, it is more preferable that the 1 st functional group on the acrylic polymer side is a hydroxyl group and the 2 nd functional group is an isocyanate group from the viewpoint of ease of producing or obtaining an acrylic polymer. In this case, examples of the isocyanate compound having both an ultraviolet polymerizable carbon-carbon double bond and an isocyanate group as the 2 nd functional group, that is, an isocyanate compound having an ultraviolet polymerizable unsaturated functional group include isocyanate group-containing (meth) acrylates. Examples of the isocyanate group-containing (meth) acrylate include 2- (meth) acryloyloxyethyl isocyanate, (meth) acryloylethacrylate, and m-isopropenyl- α, α -dimethylbenzyl isocyanate.

When the acrylic polymer used for forming the internal type ultraviolet-curable adhesive contains an isocyanate group-containing (meth) acrylate as a constituent monomer, the proportion of the isocyanate group-containing (meth) acrylate as a constituent monomer in the acrylic polymer is preferably 12 to 25mol% (the isocyanate group-containing (meth) acrylate added to the main chain of the acrylic polymer used for forming the internal type ultraviolet-curable adhesive is a constituent monomer of the acrylic polymer used for forming the adhesive in the present embodiment). Such a configuration is preferable from the viewpoint of controlling the adhesive force and/or the peeling force of the adhesive layer 12 that is used by changing the adhesive force during use of the dicing tape X with an adhesive film. Further, this configuration is also preferable from the viewpoint of suppressing the temperature dependence of the adhesive force of the adhesive layer 12 due to the decrease in the adhesive force caused by the ultraviolet irradiation.

The acrylic polymer used for forming the internal ultraviolet curable adhesive preferably contains, as constituent monomers, 2-hydroxyethyl (meth) acrylate, an alkyl (meth) acrylate such as lauryl (meth) acrylate, a hydroxyl-containing monomer such as 2-hydroxyethyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and an isocyanate group-containing (meth) acrylate such as 2- (meth) acryloyloxyethyl isocyanate, more preferably contains, as constituent monomers, an alkyl (meth) acrylate such as 2-hydroxyethyl (meth) acrylate, lauryl (meth) acrylate, and a hydroxyl-containing monomer such as 2-hydroxyethyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and a nitrogen-containing monomer such as acryloylmorpholine, and an isocyanate group-containing (meth) acrylate such as 2- (meth) acryloyloxyethyl isocyanate. Such a configuration is preferable from the viewpoint of controlling the adhesive force and/or the peeling force of the adhesive layer 12 that is used by changing the adhesive force during use of the dicing tape X with an adhesive film.

The adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketones, acylphosphine oxides, and acylphosphonates. Examples of the α -ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethyl acetophenone, 2-methyl-2-hydroxy propiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of acetophenone compounds include methoxyacetophenone, 2-dimethoxy-1, 2-diphenylethane-1-one, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylsulfanyl) -phenyl ] -2-morpholinopropane-1. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzil dimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compound include benzophenone, benzoyl benzoic acid, and 3,3' -dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone, and 2, 4-diisopropylthioxanthone. The content of the photopolymerization initiator in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 10 parts by mass based on 100 parts by mass of the base polymer such as an acrylic polymer.

The pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive for forming the same may contain a crosslinking accelerator, a tackifier, an anti-aging agent, and a colorant such as a pigment or a dye in addition to the above-described components. The colorant may be a compound that is irradiated with radiation to thereby be colored. Examples of such a compound include leuco dyes.

The thickness of the adhesive layer 12 is preferably 1 to 50. Mu.m, more preferably 2 to 30. Mu.m, still more preferably 5 to 25. Mu.m. Such a configuration is preferable for, for example, achieving a balance of the adhesive force to the adhesive film 20 before and after ultraviolet curing of the adhesive layer 12.

The dicing tape 10 having the above-described structure preferably has a tensile stress of 3 to 12MPa, more preferably 3.5 to 11.5MPa, at a strain value of 20% in a tensile test performed on a dicing tape test piece having a width of 10mm at an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min.

In order to ensure the above-described structure of the dicing tape 10 with respect to tensile stress, the substrate 11 is preferably a single-layer substrate made of ethylene-vinyl acetate copolymer (EVA) or a multi-layer substrate including an EVA layer having a thickness of 50 μm or more.

The adhesive film 20 in the dicing tape X with adhesive film has a structure capable of functioning as an adhesive for die bonding exhibiting thermosetting property. The adhesive film 20 may have a composition including a thermosetting resin and a thermoplastic resin as the resin component, or may have the following composition: comprising a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to bond. Such an adhesive film 20 may have a single-layer structure or a multilayer structure having a composition different between adjacent layers.

The thermosetting resin in the case where the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. The adhesive film 20 may contain one kind of thermosetting resin or two or more kinds of thermosetting resins. The epoxy resin tends to have a small content of ionic impurities or the like which may cause corrosion of the semiconductor chip to be die-bonded, and is therefore preferable as the thermosetting resin in the adhesive film 20. In addition, as a curing agent for making the epoxy resin exhibit thermosetting properties, a phenolic resin is preferable.

Examples of the epoxy resin include bisphenol a type, bisphenol F type, bisphenol S type, brominated bisphenol a type, hydrogenated bisphenol a type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, triphenylmethane type, tetrahydroxyphenyl ethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins. Phenol novolac type epoxy resins, o-cresol novolac type epoxy resins, biphenyl type epoxy resins, triphenylmethane type epoxy resins, and tetraphenylolethane type epoxy resins are preferable as epoxy resins in the adhesive film 20 because they have high reactivity with phenolic resins as curing agents and excellent heat resistance.

Examples of the phenolic resin that can function as a curing agent for the epoxy resin include novolac type phenolic resin, resol type phenolic resin, and polyoxystyrenes such as poly-p-hydroxystyrene. Examples of the novolak type phenol resin include phenol novolak resins, phenol aralkyl resins, cresol novolak resins, t-butylphenol novolak resins, and nonylphenol novolak resins. The adhesive film 20 may contain one kind of phenolic resin or two or more kinds of phenolic resins as curing agents for epoxy resins. When phenol novolac resin or phenol aralkyl resin is used as the curing agent for the epoxy resin as the adhesive for die bonding, the adhesive tends to have improved connection reliability, and therefore, is preferable as the curing agent for the epoxy resin in the adhesive film 20.

When the adhesive film 20 contains an epoxy resin and a phenolic resin as a curing agent thereof, the two resins are blended in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, relative to 1 equivalent of epoxy groups in the epoxy resin and hydroxyl groups in the phenolic resin. Such a configuration is preferable in terms of sufficiently performing the curing reaction of the epoxy resin and the phenolic resin at the time of curing the adhesive film 20.

The content of the thermosetting resin in the adhesive film 20 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, from the viewpoint of properly rendering the adhesive film 20 functional as a thermosetting adhesive.

The thermoplastic resin in the adhesive film 20 plays a role of an adhesive, and examples of the thermoplastic resin in the case where the adhesive film 20 has a composition containing a thermosetting resin and a thermoplastic resin include an acrylic resin, a natural rubber, a butyl rubber, an isoprene rubber, a chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6, 6-nylon, a phenoxy resin, a saturated polyester resin such as polyethylene terephthalate or polybutylene terephthalate, a polyamide imide resin, and a fluorine resin. The adhesive film 20 may contain one kind of thermoplastic resin or two or more kinds of thermoplastic resins. The acrylic resin is preferably used as the thermoplastic resin in the adhesive film 20 because of its low ionic impurities and high heat resistance.

In the case where the adhesive film 20 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the most mass proportion of monomer units derived from (meth) acrylic acid esters.

Examples of the (meth) acrylic acid ester that is a monomer unit for forming the acrylic resin, that is, the (meth) acrylic acid ester that is a constituent monomer of the acrylic resin, include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. Examples of such (meth) acrylic acid esters include the above-mentioned alkyl (meth) acrylates as constituent monomers of the acrylic polymer for the pressure-sensitive adhesive layer 12. As the constituent monomer of the acrylic resin, one type of (meth) acrylate may be used, or two or more types of (meth) acrylates may be used.

The acrylic resin may contain, for example, monomer units derived from one or two or more other monomers copolymerizable with the (meth) acrylic acid ester from the viewpoint of modification of its cohesive force and heat resistance. Examples of the other copolymerizable monomer used to form the monomer unit of the acrylic resin, that is, the other copolymerizable monomer as a constituent monomer of the acrylic resin, include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, nitrogen-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, and phosphoric acid group-containing monomers. Specific examples of the monomer include those described above as constituent monomers of the acrylic polymer for the pressure-sensitive adhesive layer 12.

In the case where the adhesive film 20 has a composition containing a thermoplastic resin having a thermosetting functional group, for example, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most mass proportion of monomer units derived from (meth) acrylate esters. As such a (meth) acrylate, for example, the same (meth) acrylate as the monomer described above as the constituent monomer of the acrylic polymer for the pressure-sensitive adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group used for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among these, glycidyl groups and carboxyl groups can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, glycidyl group-containing acrylic resin or carboxyl group-containing acrylic resin can be suitably used. In addition, a curing agent capable of reacting with the thermosetting functional group is selected according to the kind of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same curing agent as described above as the curing agent for an epoxy resin can be used as the curing agent.

For the adhesive film 20 before curing for die bonding, for example, in order to achieve a certain degree of crosslinking, a polyfunctional compound capable of reacting with a functional group or the like at the molecular chain end of the resin component contained in the adhesive film 20 to bond is preferably blended in advance as a crosslinking agent in the adhesive film-forming resin composition. Such a configuration is preferable in terms of improving the adhesive property of the adhesive film 20 at high temperature and in terms of improving heat resistance. Examples of such a crosslinking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and adducts of polyols and diisocyanates. The content of the crosslinking agent in the adhesive film-forming resin composition is preferably 0.05 parts by mass or more with respect to 100 parts by mass of the resin having the functional group capable of reacting with the crosslinking agent to bond, from the viewpoint of improving the cohesive force of the formed adhesive film 20, and preferably 7 parts by mass or less from the viewpoint of improving the adhesive force of the formed adhesive film 20. As the crosslinking agent in the adhesive film 20, other polyfunctional compounds such as epoxy resin and polyisocyanate compound may be used in combination.

The adhesive film 20 may contain a filler. The addition of the filler to the adhesive film 20 is preferable in terms of adjusting physical properties of the adhesive film 20 such as elastic modulus, yield point strength, and elongation at break. Examples of the filler include inorganic fillers and organic fillers. The filler may have various shapes such as spherical, needle-like, and scaly. The adhesive film 20 may contain one kind of filler or two or more kinds of fillers.

Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. The constituent material of the inorganic filler may be elemental metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon, graphite, and the like. When the adhesive film 20 contains an inorganic filler, the content of the inorganic filler is preferably 10 mass% or more, more preferably 20 mass% or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less.

Examples of the constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyether ether ketone, polyether imide, and polyester imide. When the adhesive film 20 contains an organic filler, the content of the organic filler is preferably 2 mass% or more, more preferably 5 mass% or more. The content is preferably 20% by mass or less, more preferably 15% by mass or less.

When the adhesive film 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10. Mu.m, more preferably 0.05 to 1. Mu.m. The filler having an average particle diameter of 0.005 μm or more is preferable in that the adhesive film 20 can achieve high wettability and adhesiveness to an adherend such as a semiconductor wafer. The structure in which the average particle diameter of the filler is 10 μm or less is preferable in terms of obtaining a sufficient filler addition effect of the adhesive film 20 and ensuring heat resistance. The average particle diameter of the filler can be determined, for example, by using a photometric particle size distribution meter (trade name "LA-910", HORIBA, ltd.).

The adhesive film 20 may contain a heat curing catalyst. The blending of the thermosetting catalyst into the adhesive film 20 is preferable in that the curing reaction of the resin component is sufficiently progressed at the time of curing the adhesive film 20, and the curing reaction rate is improved. Examples of such a heat curing catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihaloborane-based compounds. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2' -methylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -undecylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -ethyl-4 ' -methylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -methylimidazole- (1 ') ] -ethyl-s-triazine adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxy-imidazole. Examples of the triphenylphosphine compound include triphenylphosphine, tris (butylphenyl) phosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine compound includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane compound include trichloroborane. The adhesive film 20 may contain one kind of heat curing catalyst or two or more kinds of heat curing catalysts.

The adhesive film 20 may contain one or two or more other components as necessary. Examples of the other component include a flame retardant, a silane coupling agent, and an ion scavenger.

The thickness of the adhesive film 20 is preferably 3 μm or more, more preferably 7 μm or more. The thickness of the adhesive film 20 is preferably 150 μm or less, more preferably 140 μm or less.

The storage modulus (tensile storage modulus) of the adhesive film 20 at 25℃is preferably 1 to 5GPa, more preferably 1.2 to 4GPa. The storage modulus (tensile storage modulus) of the adhesive film 20 at-5℃is preferably 3 to 5GPa, more preferably 3.5 to 4.5GPa, as described above. The storage modulus can be obtained by, for example, dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device (trade name "RSAIII", manufactured by ta instruments). In this measurement, the initial inter-chuck distance of the chuck for holding the sample piece was set to 22.5mm, the measurement mode was set to the stretching mode, the measurement environment was set to the nitrogen atmosphere, the measurement temperature range was set to, for example, -40 to 280 ℃, the frequency was set to 10Hz, the dynamic strain was set to 0.005%, and the temperature rise rate was set to 10 ℃/min. The storage modulus of the adhesive film 20 can be adjusted by, for example, adjusting the amount of filler blended in the adhesive film 20, adjusting the glass transition temperature of the thermoplastic resin blended with an acrylic polymer or the like, and adjusting the amount of the thermosetting component blended at room temperature.

The dicing tape X having the above-mentioned constitution of the tape adhesive film has a ratio of the 1 st peel adhesion to the 2 nd peel adhesion of 0.8 to 2, preferably 0.9 to 1.8, wherein the 1 st peel adhesion is 300mJ/cm at a temperature of 22 DEG C ² The 1 st peel adhesion between the adhesive layer 12 and the adhesive film 20 in the 1 st test piece irradiated with ultraviolet rays, as measured by the T-type peel test, the 2 nd peel adhesion was subjected to 300mJ/cm at a temperature of 60 DEG C ² The 2 nd peel adhesion between the adhesive layer 12 and the adhesive film 20 in the 2 nd test piece irradiated with ultraviolet rays, as measured by the T-type peel test. The 1 st test piece and the 2 nd test piece are test pieces cut out from the dicing tape X with an adhesive film, and each of the test pieces has the dicing tape 10 and the adhesive film 20 releasably adhered to the ultraviolet-curable adhesive layer 12 thereof. In the present embodiment, the ultraviolet irradiation to which the test piece is subjected means that the adhesive layer 12 in the test piece is irradiated with ultraviolet rays (irradiated from the side of the substrate 11) across the substrate 11. 300mJ/cm ² For example, the ultraviolet irradiation of (C) may be performed at an irradiation intensity of 150mW/cm ² Is realized by irradiation of ultraviolet rays for 2 seconds. The T-type peel test for measuring the 1 st peel adhesion and the 2 nd peel adhesion was performed at 23℃and a peel speed of 300 mm/min. The T-type peel test can be performed, for example, using a T-type peel tester (trade name "Autograph AG-20KNSD", manufactured by Shimadzu corporation).

The 1 st peel adhesion of the dicing tape X with an adhesive film is preferably 0.03 to 0.15N/20mm.

The peel adhesion (3 rd peel adhesion) between the adhesive layer 12 and the adhesive film 20 in the dicing tape X with adhesive film, as measured by the T-type peel test at 23 ℃ and a peel speed of 300 mm/min, is preferably 1.5 to 4.5N/20mm.

The peel adhesion (4 th peel adhesion) between the adhesive layer 12 and the adhesive film 20 in the dicing tape X with adhesive film, as measured by the T-type peel test at-5 ℃ and a peel speed of 300 mm/min, is preferably 0.5 to 2N/20mm.

These peel adhesion forces (1 st to 4 th peel adhesion forces) can be adjusted by, for example, adjusting the storage modulus as described above.

The dicing tape X of the tape adhesive film described above can be manufactured, for example, as follows.

The dicing tape 10 of the dicing tape X with an adhesive film can be produced by providing the adhesive layer 12 on the prepared base material 11. For example, the resin substrate 11 can be produced by a film-forming method such as a roll-forming method, a casting method in an organic solvent, a blow-extrusion method in a closed system, a T-die extrusion method, a coextrusion method, or a dry lamination method. The film after the film formation and/or the substrate 11 are subjected to a predetermined surface treatment as needed. In the formation of the adhesive layer 12, for example, after preparing an adhesive composition for forming an adhesive layer, the composition is first coated on the substrate 11 or a predetermined separator to form an adhesive composition layer. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is dried by heating and if necessary, and crosslinked if necessary. The heating temperature is, for example, 80 to 150℃and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 is formed on the separator, the pressure-sensitive adhesive layer 12 with the separator is bonded to the substrate 11, and thereafter, the separator is peeled off. Thus, the dicing tape 10 having the laminated structure of the base material 11 and the adhesive layer 12 was produced.

In the production of the adhesive film 20 with the dicing tape X of the adhesive film, first, an adhesive composition for forming the adhesive film 20 is prepared, and then, the composition is applied to a predetermined separator to form an adhesive composition layer. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and plastic film and paper surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is dried by heating and if necessary, and crosslinked if necessary. The heating temperature is, for example, 70 to 160℃and the heating time is, for example, 1 to 5 minutes. The adhesive film 20 can be produced with a separator in the manner described above.

In the production of the dicing tape X with the adhesive film, the adhesive film 20 with the separator is punched into a disc shape having a predetermined diameter, and then the adhesive film 20 is pressure-bonded to the adhesive layer 12 side of the dicing tape 10. The bonding temperature is, for example, 30 to 50℃and preferably 35 to 45 ℃. The bonding pressure (line pressure) is, for example, 0.1 to 20kgf/cm, preferably 1 to 10kgf/cm. Next, the dicing tape 10 bonded to the adhesive film 20 as described above is punched out into a disc shape having a predetermined diameter so that the center of the dicing tape 10 coincides with the center of the adhesive film 20.

In this way, the dicing tape X with the adhesive film can be produced. In the dicing tape X with an adhesive film, a separator (not shown) may be provided on the adhesive film 20 side so as to cover at least the adhesive film 20. The separator is a component for protecting the adhesive film 20 and the pressure-sensitive adhesive layer 12 from being exposed, and is peeled from the adhesive film when the dicing tape X with the film is used.

Fig. 3 to 9 show an example of a method for manufacturing a semiconductor device using the dicing tape X with an adhesive film described above.

In the present method for manufacturing a semiconductor device, first, as shown in fig. 3 (a) and 3 (b), a modified region 30a is formed in a semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been formed on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and laser light in focus with the inside of the wafer is irradiated along the pre-dividing line from the side opposite to the wafer processing tape T1 to the semiconductor wafer W, whereby the modified region 30a is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30a is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified region 30a on the pre-cut line in the semiconductor wafer by laser irradiation is described in detail in, for example, japanese unexamined patent publication No. 2002-192370, and the laser irradiation conditions in the present embodiment can be appropriately adjusted within the following conditions, for example.

< laser irradiation conditions >

(A) Laser light

(B) Focusing lens

Multiplying power is 100 times or less

NA 0.55

Transmittance to laser wavelength is 100% or less

(C) The movement speed of the stage on which the semiconductor substrate is mounted is 280 mm/sec or less

Next, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while the semiconductor wafer W is held on the wafer processing tape T1, whereby, as shown in fig. 3 (c), a semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips 31 is formed (wafer thinning step). The grinding may be performed using a grinding apparatus having a grinding stone.

Next, as shown in fig. 4 (a), the semiconductor wafer 30A held by the wafer processing tape T1 is bonded to the dicing tape X of the adhesive film on the adhesive film 20 side. Thereafter, as shown in fig. 4 (b), the wafer processing tape T1 is peeled from the semiconductor wafer 30A.

Next, a ring frame 41 made of SUS, for example, is attached to the adhesive layer 12 around the adhesive film 20 in the dicing tape X with adhesive film, and then the dicing tape X with adhesive film with semiconductor wafer 30A is fixed to the holder 42 of the expanding device via the ring frame 41 as shown in fig. 5 (a).

Then, as shown in fig. 5 b, a 1 st expansion step (cold expansion step) is performed under a predetermined low temperature condition to singulate the semiconductor wafer 30A into a plurality of semiconductor chips 31, and the adhesive film 20 with the dicing tape X of the adhesive film is cut into small pieces of the adhesive film 21, thereby obtaining the semiconductor chips 31 with the adhesive film. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with the adhesive film, and is lifted up to expand the dicing tape 10 with the dicing tape X with the adhesive film attached thereto of the semiconductor wafer 30A so as to be stretched in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansion is performed under conditions such that a tensile stress of, for example, 15 to 32MPa is generated in the dicing tape 10. The temperature conditions in the cold expansion step are, for example, 0℃or lower, preferably-20 to-5℃and more preferably-15 to-5℃and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in the cold expansion step is, for example, 1 to 400 mm/sec. The expansion amount in the cold expansion step is, for example, 3 to 16mm. These conditions concerning expansion in the cold expansion step are also similar to those in the cold expansion step described later.

Through such a cold expansion step, the adhesive film 20 with the dicing tape X of the adhesive film is cut into small pieces of adhesive film 21, and the semiconductor chip 31 with the adhesive film is obtained. Specifically, in this step, cracks are formed in the fragile modified region 30A of the semiconductor wafer 30A, and singulation (dicing of the wafer and the adhesive film in the form of invisible dicing) into the semiconductor chips 31 occurs. At the same time, in the present step, in the adhesive film 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 that is being expanded, the deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer 30A is in close contact, while such deformation suppressing action is not generated at a position opposite to the crack forming position of the wafer, and in this state, the tensile stress generated on the dicing tape 10 acts. As a result, the adhesive film 20 is cut at a position facing the crack formation position between the semiconductor chips 31. After this step, as shown in fig. 5 (c), the jack-up member 43 is lowered, and the expanded state in the dicing tape 10 is released.

Next, as shown in fig. 6 (a) and 6 (b), the 2 nd expansion step (normal temperature expansion step) is performed, and the distance between the semiconductor chips 31 with the adhesive film is increased. In this step, the stage 44 provided in the expanding device is raised to expand the dicing tape 10 of the dicing tape X with the adhesive film. The platen 44 is capable of applying a negative pressure to a workpiece on the platen surface to vacuum the workpiece. The temperature condition in the 2 nd expansion step is, for example, 10℃or higher, preferably 15 to 30 ℃. The expansion speed (the speed at which the stage 44 is raised) in the 2 nd expansion step is, for example, 0.1 to 10 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16mm. In this step, the dicing tape 10 is expanded (the separation distance of the semiconductor chips 31 with the adhesive film is thereby increased) by the elevation of the stage 44, and thereafter, the stage 44 vacuum-sucks the dicing tape 10. Then, while maintaining the suction by the stage 44, the stage 44 is lowered with the workpiece as shown in fig. 6 (c). In the present embodiment, the periphery of the semiconductor wafer 30A (the portion outside the holding region of the semiconductor chip 31) in the dicing tape X with the adhesive film is heated and shrunk in this state (heat shrinking step). Thereafter, the vacuum suction state by the stage 44 is released. The dicing tape X of the tape adhesive film is formed into the following state by the heat shrinkage process: in a state in which a predetermined degree of tension acts on the wafer bonding region stretched and temporarily relaxed in the 1 st and 2 nd expansion steps, the separation distance between the semiconductor chips 31 is fixed even after the vacuum suction state is released.

In the present semiconductor device manufacturing method, next, as shown in fig. 7, the adhesive layer 12 is advancedUltraviolet irradiation for promoting ultraviolet curing to reduce the adhesive force is performed (ultraviolet irradiation step). Specifically, the ultraviolet radiation R is applied to the entire adhesive layer 12 from the substrate 11 side of the dicing tape 10 using, for example, a high-pressure mercury lamp. The cumulative irradiation light quantity is, for example, 50 to 500mJ/cm ² Preferably 100 to 300mJ/cm ² . The region of the dicing tape X with an adhesive film to be irradiated with ultraviolet light, which is a measure for reducing the adhesive force of the adhesive layer 12, is, for example, a region D shown in fig. 1 excluding the edge portion of the adhesive film 20 bonding region in the adhesive layer 12.

In the present semiconductor device manufacturing method, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape X with the adhesive film via a cleaning liquid such as water as needed, a pickup step is performed using a dicing bonding apparatus having both a pickup mechanism and an expanding mechanism.

Specifically, first, as shown in fig. 8 (a), in a state where dicing tape X with tape adhesive film of a plurality of semiconductor chips 31 and/or dicing tape 10 thereof is fixed to holder 45 of the die bonding apparatus via ring frame 41, hollow cylindrical jack member 46 provided in the apparatus is brought into contact with dicing tape 10 at the lower side in the drawing of dicing tape 10 and raised. Thereby, the dicing tape 10 is stretched in two dimensions including the radial and circumferential directions thereof (pre-pick expansion).

Next, as shown in fig. 8 (b), the semiconductor chips 31 with the adhesive film are picked up from the dicing tape 10. For example, the semiconductor chip 31 with the adhesive film to be picked up is lifted up by the pin member 47 of the pick-up mechanism at the lower side in the drawing of the dicing tape 10, and then is sucked and held by the suction jig 48 after being lifted up via the dicing tape 10. In this pickup, the lifting speed of the pin member 47 is, for example, 1 to 100 mm/sec, and the lifting amount of the pin member 47 is, for example, 50 to 3000 μm.

Next, as shown in fig. 9 (a), the picked-up semiconductor chip 31 with an adhesive film is temporarily fixed to a predetermined adherend 51 via the adhesive film 21. Examples of the adherend 51 include a lead frame, a TAB (tape automated bonding ) film, and a wiring board.

Next, as shown in fig. 9 b, an electrode pad (pad) (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected by a bonding wire 52 (wire bonding step). The electrode pad of the semiconductor chip 31, the terminal portion of the adherend 51, and the bonding wire 52 can be bonded by ultrasonic welding accompanied by heating so as not to thermally cure the adhesive film 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ℃. The heating time is several seconds to several minutes.

Next, as shown in fig. 9 c, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In this step, the adhesive film 21 is thermally cured. In this step, the sealing resin 53 is formed by a transfer molding technique using a mold, for example. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. In the case where the curing of the sealing resin 53 is not sufficiently performed in the present step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after the present step. In the sealing step, even when the adhesive film 21 is not completely thermally cured, the adhesive film 21 may be completely thermally cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185℃and the heating time is, for example, 0.5 to 8 hours.

The semiconductor device can be manufactured as described above.

In the present method for manufacturing a semiconductor device, instead of the above-described configuration in which the semiconductor wafer 30A is bonded to the dicing tape X with adhesive film, the semiconductor wafer 30B manufactured in the following manner may be bonded to the dicing tape X with adhesive film.

In the production of the semiconductor wafer 30B, first, as shown in fig. 10 (a) and 10 (B), the dividing grooves 30B are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been formed on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and then a dicing groove 30b having a predetermined depth is formed in the 1 st surface Wa side of the semiconductor wafer W by using a rotary blade such as a dicing device. The dividing grooves 30b are voids for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30b are schematically shown with thick lines in the drawing).

Next, as shown in fig. 10 (c), the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 is peeled from the semiconductor wafer W.

Next, as shown in fig. 10 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while the semiconductor wafer W is held on the wafer processing tape T3 (wafer thinning step). Through this wafer thinning process, in the present embodiment, a semiconductor wafer 30B capable of being singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30B has a portion (connection portion) for connecting portions of the wafer that are to be singulated into the plurality of semiconductor chips 31 on the 2 nd side Wb. The thickness of the connection portion of the semiconductor wafer 30B, that is, the distance between the 2 nd surface Wb of the semiconductor wafer 30B and the 2 nd surface Wb side front end of the dividing groove 30B is, for example, 1 to 30 μm. The semiconductor wafer 30B manufactured in the above-described manner may be bonded to the dicing tape X with the adhesive film instead of the semiconductor wafer 30A, and the steps described above with reference to fig. 5 to 9 may be performed.

Fig. 11 a and 11B specifically show the 1 st expansion step (cold expansion step) performed after the semiconductor wafer 30B is bonded to the dicing tape X with adhesive film. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with the adhesive film, and is lifted up to expand the dicing tape 10 with the dicing tape X with the adhesive film attached thereto, which includes the semiconductor wafer 30B, so as to be stretched in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer 30B. In such a cold expansion step, the semiconductor wafer 30B is cut at a portion which is thin in thickness and is easily broken, and the semiconductor chip 31 is singulated (the wafer cut by the half blade and the adhesive film are cut). At the same time, in the present step, in the adhesive film 20 adhered to the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region where the semiconductor chips 31 are adhered, and such deformation suppressing action is not generated at the position facing the dividing grooves between the semiconductor chips 31, and in this state, tensile stress generated on the dicing tape 10 acts. As a result, the adhesive film 20 is cut at a position facing the dividing groove between the semiconductor chips 31. The semiconductor chip 31 with an adhesive film thus obtained is subjected to a mounting step in the semiconductor device manufacturing process after the pick-up step described above with reference to fig. 8.

In the present semiconductor device manufacturing method, the wafer thinning process shown in fig. 12 may be performed instead of the wafer thinning process described above with reference to fig. 10 (d). After the above-described process with reference to fig. 10 (C), in the wafer thinning process shown in fig. 12, the wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb while being held on the wafer processing tape T3, and a semiconductor wafer divided body 30C (wafer in a form of being cut by a blade) including a plurality of semiconductor chips 31 is formed. In this step, a method (1 st method) of grinding the wafer until the dividing groove 30b itself is exposed on the 2 nd surface Wb side may be adopted, or the following method may be adopted: a method (method 2) of forming a semiconductor wafer segment 30C by grinding a wafer from the side of the 2 nd surface Wb until the wafer reaches the segment groove 30b, and then causing a crack between the segment groove 30b and the 2 nd surface Wb by the pressing force of the rotating grindstone to the wafer. The depth of the dividing groove 30b formed as described above with reference to fig. 10 (a) and 10 (b) from the 1 st surface Wa is suitably determined according to the method employed. In fig. 12, the dividing groove 30b through the 1 st method or the dividing groove 30b through the 2 nd method and the cracks connected thereto are schematically shown with thick lines. The semiconductor wafer divided bodies 30C thus manufactured may be bonded to the dicing tape X with the adhesive film instead of the semiconductor wafer 30A and the semiconductor wafer 30B, and then the steps described above with reference to fig. 5 to 9 may be performed.

Fig. 13 a and 13 b specifically show the 1 st expansion step (cold expansion step) performed after the semiconductor wafer separator 30C is bonded to the dicing tape X with adhesive film. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing tape X with the adhesive film, and is lifted up to expand the dicing tape 10 with the dicing tape X with the adhesive film bonded thereto, in which the semiconductor wafer separator 30C is stretched in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer separator 30C. In the adhesive film 20 adhered to the adhesive layer 12 of the dicing tape 10 thus expanded, the deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer separator 30C are adhered, and on the other hand, such deformation suppressing action is not generated at the position facing the dividing grooves 30b between the semiconductor chips 31, and in this state, the tensile stress generated on the dicing tape 10 acts. As a result, the adhesive film 20 is cut at a position facing the dividing groove 30b between the semiconductor chips 31 (the wafer cut by the blade is cut from the adhesive film). The semiconductor chip 31 with an adhesive film thus obtained is subjected to a mounting step in the semiconductor device manufacturing process after the pick-up step described above with reference to fig. 8.

The dicing tape X with adhesive film has a ratio of the 1 st peel adhesion to the 2 nd peel adhesion of the 1 st peel adhesion of 300mJ/cm at a temperature of 22℃of 0.8 to 2, preferably 0.9 to 1.8, as described above ² The 1 st peel adhesion between the adhesive layer 12 and the adhesive film 20 in the 1 st test piece irradiated with ultraviolet rays, as measured by the T-type peel test at 23℃and a peel speed of 300 mm/min, the 2 nd peel adhesion being 300mJ/cm at a temperature of 60 ℃ ² The 2 nd peel adhesion between the adhesive layer 12 and the adhesive film 20 in the 2 nd test piece irradiated with ultraviolet rays was measured by a T-type peel test at 23 ℃ and a peel speed of 300 mm/min. When the temperature dependency of the decrease in the adhesive strength due to the ultraviolet irradiation is limited to the above-described range, the adhesive strength before the ultraviolet irradiation (adhesive strength before the UV irradiation) and the adhesive strength after the ultraviolet irradiation (adhesive strength after the UV irradiation) are balanced in the ultraviolet irradiation step actually accompanying the change in the environmental temperature, and therefore, it is easy to achieve both of the relatively high adhesive strength required for each expansion step for dicing the adhesive film 20 on the dicing tape 10 from the wafer and the relatively low adhesive strength required for the pickup step for picking up the semiconductor chip with the adhesive film from the dicing tape 10. The present inventors have obtained such findings. Specifically, examples and comparative examples described below are shown.

The composition having the above ratio of 2 or less, preferably 1.8 or less is suitable for securing a sufficiently strong UV-irradiation adhesive force in the adhesive layer 12, and not only the adhesive force obtained when subjected to UV irradiation in a normal temperature environment, but also the adhesive force obtained when subjected to UV irradiation in a high temperature environment of about 60 ℃ is practically used as a sufficiently weak UV-irradiation adhesive force required in the pickup step. In addition, the adhesive layer 12, in which the relatively high adhesive force required in the expanding process is sufficiently ensured, is suitable for suppressing the floating of the semiconductor chips 31 with the adhesive film on the dicing tape 10 from the dicing tape 10 during the period from the expanding process to the ultraviolet irradiation process.

As described above, the dicing tape X of the tape adhesive film is suitable for satisfactorily cutting the adhesive film 20 on the dicing tape 10 in the expanding process, and is suitable for achieving satisfactory pickup in the pickup process while suppressing the floating of the semiconductor chips 31 of the cut tape adhesive film from the dicing tape 10.

The 1 st peel adhesion of the dicing tape X of the tape adhesive film is preferably 0.03 to 0.15N/20mm. Such a configuration is preferable for limiting the post-UV irradiation adhesive force of the adhesive layer 12 in a practical range in consideration of a change in actual ambient temperature in the ultraviolet irradiation step.

In the dicing tape X with an adhesive film, the peel adhesion (3 rd peel adhesion) between the adhesive layer 12 and the adhesive film 20, as measured by the T-type peel test at 23℃and a peel speed of 300 mm/min, is preferably 1.5 to 4.5N/20mm as described above. Such a configuration is suitable for suppressing the semiconductor chips 31 with the adhesive film on the dicing tape 10 from floating from the dicing tape 10 during the period from the expanding step for dicing to the ultraviolet irradiation step. This configuration is suitable for practical use of the pre-UV-irradiation adhesive force of the adhesive layer 12 and limiting the post-UV-irradiation adhesive force in consideration of actual ambient temperature changes in the ultraviolet irradiation step to a practical range.

The peel adhesion (4 th peel adhesion) between the adhesive layer 12 and the adhesive film 20 in the dicing tape X with an adhesive film is preferably 0.5 to 2N/20mm as described above, as measured by the T-type peel test at-5 ℃ and a peel speed of 300 mm/min. Such a configuration is suitable for satisfactorily cutting the adhesive film 20 on the dicing tape 10 when the dicing tape using the tape adhesive film is subjected to an expanding step for cutting under a low temperature condition of, for example, 0 ℃. This configuration is suitable for practical use of the pre-UV-irradiation adhesive force of the adhesive layer 12 and limiting the post-UV-irradiation adhesive force in consideration of actual ambient temperature changes in the ultraviolet irradiation step to a practical range.

The storage modulus (tensile storage modulus) at 25℃of the adhesive film 20 in the dicing tape X with adhesive film is preferably 1 to 5GPa, more preferably 1.2 to 4GPa as described above. Such a configuration is preferable for ensuring the adhesion of the adhesive film 20 to the adhesive layer 12 at room temperature and a temperature range around the room temperature.

The storage modulus at-5℃of the adhesive film 20 in the dicing tape X with adhesive film is preferably 3 to 5GPa, more preferably 3.5 to 4.5GPa, as described above. Such a configuration is suitable for ensuring the severability of the adhesive film 20 under low temperature conditions of, for example, 0 ℃.

The dicing tape 10 in the dicing tape X with adhesive film preferably has a tensile stress at a strain value of 20% of 3 to 12MPa, more preferably 3.5 to 11.5MPa in a tensile test conducted on a dicing tape test piece having a width of 10mm at an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min as described above. Such a configuration is suitable for satisfactorily cutting the adhesive film 20 on the dicing tape 10 in the cutting and expanding process under low-temperature conditions.

Examples

[ example 1 ]

Manufacturing of cutting tape

In a reaction vessel equipped with a condenser, a nitrogen inlet, a thermometer, and a stirring device, a mixture containing 54 parts by mol of 2-ethylhexyl acrylate (2 EHA), 18 parts by mol of 2-hydroxyethyl acrylate (HEA), 14 parts by mol of Acryloylmorpholine (ACMO), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 61 ℃ under a nitrogen atmosphere for 6 hours (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.2 part by mass relative to 100 parts by mass of the monomer component, and the content of toluene was 65 parts by mass relative to 100 parts by mass of the monomer component. By this polymerization reaction, an acrylic polymer P is obtained ₁ Is a polymer solution of (a). Next, the acrylic polymer P is contained ₁ After 14 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI) was added thereto, the mixture was stirred at 50℃under an air atmosphere for 48 hours (addition reaction). Thereby, an acrylic polymer P having a methacryloyl group in the side chain is obtained ₂ Is a polymer solution of (a). Next, a polymer P is added to the polymer solution ₂ 100 parts by mass of a crosslinking agent (trade name "CORONATE L", manufactured by Tosoh Co., ltd.) and 5 parts by mass of a photopolymerization initiator (trade name "Irgacure 369", manufactured by BASF Co., ltd.) were mixed to obtain an adhesive composition. Next, the surface of the silicone release treated surface of the PET separator having the surface subjected to the silicone release treatment was coated with an applicatorThe adhesive composition is applied to form an adhesive composition layer. Subsequently, the composition layer was dried by heating at 120℃for 2 minutes to form an adhesive layer having a thickness of 10. Mu.m, on the PET separator. Then, a base material (trade name "RB0103", thickness 125 μm, manufactured by Takara Shuzo Co., ltd.) made of ethylene-vinyl acetate copolymer (EVA) was bonded to the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. In the above manner, a dicing tape of example 1 including a base material and an adhesive layer was produced. Table 1 shows the compositions of the adhesive layers of the Dicing Tapes (DT) of example 1 and examples and comparative examples described later. In table 1, regarding constituent monomers of the Acrylic Polymer (AP), molar ratios between the monomers are described, and regarding the crosslinking agent, mass ratios (regarding monomer composition, ratio of ACMO to 2 EHA) with respect to 100 parts by mass of the acrylic polymer are described.

Production of adhesive film

Acrylic resin A ₁ (trade name "TEISAN RESIN SG-P3", weight average molecular weight 85 ten thousand, glass transition temperature 12 ℃, manufactured by Nagase ChemteX Corporation) 80 parts by mass, 20 parts by mass of a phenol resin (trade name "MEH-7851SS", manufactured by Ming and Chemie Co., ltd.), and 50 parts by mass of an inorganic filler (trade name "SO-25", manufactured by spherical silica, admatechs Corporation) were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content of 20% by mass. An adhesive composition layer was formed by applying an adhesive composition to a silicone release treated surface of a PET separator (thickness 38 μm) having a silicone release treated surface using an applicator. Subsequently, the composition layer was dried by heating at 130℃for 2 minutes to prepare an adhesive film of example 1 having a thickness of 10. Mu.m, on a PET separator. Table 1 shows the compositions (mass ratios) of the adhesive films in example 1 and examples and comparative examples described later.

Production of dicing tape with adhesive film

The adhesive film of example 1 with PET spacers was punched into a disc shape with a diameter of 330 mm. Then, the PET separator was peeled off from the dicing tape, and then the adhesive layer exposed in the dicing tape was bonded to the adhesive film with the PET separator using a roll laminator. In the bonding, the bonding speed was set to 10 mm/min, the temperature condition was set to 23℃and the pressure condition was set to 0.15MPa. Then, the dicing tape bonded to the adhesive film in this manner was punched out to a disc shape having a diameter of 370mm so that the center of the dicing tape coincides with the center of the adhesive film. In the above manner, the dicing tape having the tape adhesive film of example 1 including the laminate structure of the dicing tape and the adhesive film was produced.

[ example 2 ]

Manufacturing of cutting tape

In a reaction vessel equipped with a condenser, a nitrogen inlet, a thermometer, and a stirring device, a mixture containing 30 parts by mol of 2-ethylhexyl acrylate (2 EHA), 27 parts by mol of 4-hydroxybutyl acrylate (4 HBA), 23 parts by mol of Acryloylmorpholine (ACMO), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 61 ℃ under a nitrogen atmosphere for 6 hours (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.2 part by mass relative to 100 parts by mass of the monomer component, and the content of toluene was 65 parts by mass relative to 100 parts by mass of the monomer component. By this polymerization reaction, an acrylic polymer P is obtained ₃ Is a polymer solution of (a). Next, the acrylic polymer P is contained ₃ After 20 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI) was added thereto, the mixture was stirred at 50℃under an air atmosphere for 48 hours (addition reaction). Thereby, an acrylic polymer P having a methacryloyl group in the side chain is obtained ₄ Is a polymer solution of (a). Then, a polymer P is added to the polymer solution ₄ 100 parts by mass of a crosslinking agent (trade name "CORONATE L", manufactured by Tosoh Co., ltd.) and 5 parts by mass of a photopolymerization initiator (trade name "Irgacure 369", manufactured by BASF Co., ltd.) were mixed to obtain an adhesive composition. Next, an adhesive composition was applied to the silicone release treated surface of the PET separator having the silicone release treated surface using an applicator to form an adhesive composition A layer. Subsequently, the composition layer was dried by heating at 120℃for 2 minutes to form an adhesive layer having a thickness of 10. Mu.m, on the PET separator. Then, a base material made of an ethylene-vinyl acetate copolymer (EVA) (trade name "NED125", manufactured by GUNZE LIMITED, thickness 125 μm) was laminated on the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. In the above manner, a dicing tape of example 2 including a substrate and an adhesive layer was produced.

Production of adhesive film

Acrylic resin A ₁ (trade name "TEISAN RESIN SG-P3", manufactured by Nagase ChemteX Corporation) 90 parts by mass, phenol resin (trade name "MEH-7851SS", manufactured by Ming He Chemicals Co., ltd.) 10 parts by mass, and an inorganic filler (trade name "SO-25", manufactured by Admatechs Corporation) 50 parts by mass were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content of 20% by mass. An adhesive composition layer was formed by applying an adhesive composition to a silicone release treated surface of a PET separator (thickness 38 μm) having a silicone release treated surface using an applicator. Subsequently, the composition layer was dried by heating at 130℃for 2 minutes to prepare an adhesive film of example 2 having a thickness of 10. Mu.m, on a PET separator.

Production of dicing tape with adhesive film

A dicing tape of the tape adhesive film of example 2 was produced in the same manner as the dicing tape of the tape adhesive film of example 1, except that the dicing tape and adhesive film of example 2 were used instead of the dicing tape and adhesive film of example 1.

[ example 3 ]

In the formation of the dicing tape adhesive layer, a dicing tape of the tape adhesive film of example 3 was produced in the same manner as the dicing tape of the tape adhesive film of example 1 except that the amount of 2EHA was changed from 54 parts by mol to 36 parts by mol, the amount of HEA was changed from 18 parts by mol to 20 parts by mol, 4HBA was used in 10 parts by mol, the amount of ACMO was changed from 14 parts by mol to 9 parts by mol, the amount of MOI was changed from 14 parts by mol to 25 parts by mol, and the amount of the crosslinking agent was changed from 0.8 part by mass to 3 parts by mol.

Comparative example 1

A dicing tape of comparative example 1 was produced in the same manner as in the dicing tape of example 1 except that the amount of 2EHA was changed from 54 parts by mol to 76 parts by mol, the amount of HEA was changed from 18 parts by mol to 14 parts by mol, ACMO was not used, the amount of MOI was changed from 14 parts by mol to 10 parts by mol, the amount of the crosslinking agent was changed from 0.8 part by mass to 0.4 part by mass, and a polyolefin-based substrate (trade name "infusa 9807", manufactured by kugaku corporation) was used instead of the EVA-based substrate in the formation of the dicing tape adhesive layer.

Production of adhesive film

Acrylic resin A ₂ (trade name "TEISAN RESIN SG-708-6", manufactured by Nagase ChemteX Corporation) 90 parts by mass, phenol resin (trade name "MEH-7851SS", manufactured by Ming He Chemicals Co., ltd.) 10 parts by mass, and inorganic filler (trade name "SO-25", manufactured by Admatechs Corporation) 50 parts by mass were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content of 20% by mass. An adhesive composition layer was formed by applying an adhesive composition to a silicone release treated surface of a PET separator (thickness 38 μm) having a silicone release treated surface using an applicator. Subsequently, the composition layer was dried by heating at 130℃for 2 minutes to prepare an adhesive film of comparative example 1 having a thickness of 10. Mu.m, on a PET separator.

Production of dicing tape with adhesive film

A dicing tape of the tape adhesive film of comparative example 1 was produced in the same manner as the dicing tape of the tape adhesive film of example 1, except that the dicing tape and adhesive film of comparative example 1 were used instead of the dicing tape and adhesive film of example 1.

Comparative example 2

A dicing tape of a tape adhesive film of comparative example 2 was produced in the same manner as the dicing tape of a tape adhesive film of example 1 except that the amount of 2EHA was changed from 54 parts by mol to 65 parts by mol, the amount of HEA was changed from 18 parts by mol to 18 parts by mol, the amount of ACMO was changed from 14 parts by mol to 8 parts by mol, the amount of MOI was changed from 14 parts by mol to 8 parts by mol, the amount of the crosslinking agent was changed from 0.8 part by mass to 5 parts by mass, and a polyolefin substrate (trade name "infusa 9530", manufactured by bezels corporation) was used instead of the EVA substrate.

Adhesion after UV irradiation (22 ℃)

The dicing tapes of the respective tape adhesive films of examples 1 to 3 and comparative examples 1 and 2 were examined for peel adhesion between the dicing tape adhesive layer and the adhesive film, which were subjected to ultraviolet irradiation at 22 ℃. First, using a high-pressure mercury lamp, the dicing tape adhesive layer was irradiated with 300mJ/cm at a temperature of 22℃from the dicing tape base material side in the dicing tape with the adhesive film ² (irradiation intensity 150 mW/cm) ² 2 seconds). Then, after the PET separator on the adhesive film side was peeled off from the dicing tape with the adhesive film, a backing tape (trade name "BT-315", manufactured by Nito electric Co., ltd.) was attached to the adhesive film side. Then, test pieces having dimensions of 50mm wide and 120mm long were cut out from the dicing tape of the tape adhesive film with a backing tape. Then, the test piece was subjected to a T-type peel test using a T-type peel tester (trade name: autograph AG-20KNSD, manufactured by Shimadzu corporation) to measure peel adhesion F ₁ (N/20 mm). In this measurement, the temperature condition was set at 23℃and the peeling speed was set at 300 mm/min. The results are shown in Table 1.

Adhesion after UV irradiation (60 ℃)

The dicing tapes of each of the adhesive films of examples 1 to 3 and comparative examples 1 and 2 were examined for peel adhesion between the dicing tape adhesive layer and the adhesive film, which had been subjected to ultraviolet irradiation at 60 ℃. Firstly, a dicing tape with an adhesive film was placed on a hot plate with its surface temperature adjusted to 60℃so that the adhesive film side (with PET separator) contacted the hot plate, and after 10 seconds of standing, a dicing tape adhesive layer was irradiated with 300mJ/cm at 60℃from the dicing tape base material side in the dicing tape with an adhesive film using a high-pressure mercury lamp ² (irradiation intensity 150 mW/cm) ² 2 seconds). Then, the PET separator on the adhesive film side was peeled off from the dicing tape with the adhesive film, and then the adhesive film was peeled offSide-attached backing tape (trade name "BT-315", manufactured by Nitto Denko Co., ltd.). Thereafter, test pieces having dimensions of 50mm wide and 120mm long were cut from the dicing tape of the tape adhesive film with a backing tape. Then, the test piece was subjected to a T-type peel test using a T-type peel tester (trade name: autograph AG-20KNSD, manufactured by Shimadzu corporation), and peel adhesion F was measured ₂ (N/20 mm). In this measurement, the temperature condition was set at 23℃and the peeling speed was set at 300 mm/min. The results are shown in Table 1. In addition, the peel adhesion force F is also described ₂ Relative to peel adhesion F ₁ Is a ratio of (2).

Adhesive force before UV irradiation

The dicing tapes of the adhesive films of examples 1 to 3 and comparative examples 1 and 2 were examined for peel adhesion between the dicing tape adhesive layer and the adhesive film before exposure to ultraviolet light. First, a dicing tape with an adhesive film was peeled off a PET separator on the adhesive film side, and then a backing tape (trade name "BT-315", manufactured by ridong electric company, ltd.) was attached to the adhesive film side. Then, test pieces having dimensions of 50mm wide and 120mm long were cut out from the dicing tape of the tape adhesive film with a backing tape. Then, the test piece was subjected to a T-type peel test using a T-type peel tester (trade name "Autograph AG-20KNSD", manufactured by Shimadzu corporation) to measure peel adhesion F ₃ (N/20 mm). In this measurement, the temperature condition was set at 23℃and the peeling speed was set at 300 mm/min. The results are shown in Table 1.

The dicing tapes of examples 1 to 3 and comparative examples 1 and 2 were each changed in temperature conditions in the T-type peeling test from 23℃to-5℃and were also bonded to the peeling adhesive force F ₃ The same procedure as in the measurement of (1) was followed to measure the peel adhesion F between the dicing tape-adhesive layer and the adhesive film before irradiation with ultraviolet rays ₄ . The results are shown in Table 1.

[ tensile stress of the dicing tape ]

The dicing tapes of the respective tape adhesive films of examples 1 to 3 and comparative examples 1 and 2 were examined for tensile stress. First, test pieces having dimensions of 10mm wide and 10mm long were cut out from the dicing tape. Then, the test piece was subjected to a tensile test using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation), and tensile stress generated at a strain value of 20% was measured. In the tensile test, the distance between the initial chucks was 100mm, the temperature condition was-5℃and the tensile speed was 300 mm/min. The average value of the measured values from the tensile test pieces of the same dicing tape was used as the tensile stress at-5 ℃. The values are shown in Table 1.

[ storage modulus of adhesive film ]

The adhesive films of the dicing tapes of each of the adhesive films of examples 1 to 3 and comparative examples 1 and 2 were found to have a storage modulus (tensile storage modulus) at 25℃and a storage modulus (tensile storage modulus) at-5℃based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring apparatus (trade name "RSAIII", manufactured by TA Instruments Co.). The test pieces for measurement were prepared as follows: for each of examples and comparative examples, a laminate was formed by laminating a plurality of adhesive films to a thickness of 200. Mu.m, and then cut out of the laminate in a size of 10mm wide by 40mm long to obtain test pieces. In the present measurement, the initial distance between chucks of the chuck for holding the sample piece was 22.5mm, the measurement mode was the stretching mode, the measurement environment was under a nitrogen atmosphere, the measurement temperature range was-40 to 280 ℃, the frequency was 10Hz, the dynamic strain was 0.005%, and the temperature rise rate was 10 ℃/min. For each adhesive film, the storage modulus E at 25 DEG C ₁ Storage modulus E at (GPa) and-5 DEG C ₂ (GPa) is shown in Table 1.

[ bonding Process and expansion Process ]

The following bonding step, the 1 st expansion step (cold expansion step) for dicing, and the 2 nd expansion step (room temperature expansion step) for partitioning were performed using dicing tapes of the respective tape adhesive films of examples 1 to 3 and comparative examples 1 and 2.

In the bonding step, a semiconductor wafer held by a wafer processing tape (trade name "UB-3083D", manufactured by niton corporation) is bonded to the adhesive layer of the dicing tape with the adhesive film, and then the wafer processing tape is peeled from the semiconductor wafer. The semiconductor wafer was subjected to half-cut dicing and thinning to form dividing grooves (25 μm wide, forming a 10mm×10mm lattice-like divided region) for singulation and had a thickness of 50 μm. In bonding, a laminator was used, the bonding speed was set to 10 mm/sec, the temperature condition was set to 60℃and the pressure condition was set to 0.15MPa. In this step, the surface of the semiconductor wafer opposite to the dicing groove forming surface is bonded to the adhesive layer in the dicing tape with the adhesive film.

The cold expansion step was performed using a chip separation apparatus (trade name "Die Separator DDS2300", manufactured by DISCO inc.) by using a cold expansion unit thereof. Specifically, a ring frame is attached to the dicing tape with the adhesive film of the semiconductor wafer and/or the adhesive layer thereof, and then the dicing tape with the adhesive film of the semiconductor wafer is set in an apparatus, and the dicing tape with the dicing tape of the adhesive film of the semiconductor wafer is expanded by a cold expansion unit of the apparatus. In the cold expansion step, the temperature was-5℃and the expansion rate was 200 mm/sec and the expansion amount was 12mm. By this step, the semiconductor wafer is singulated on the dicing tape to obtain a plurality of semiconductor chips with the adhesive layer.

The room temperature expansion step was performed using a chip separation apparatus (trade name "Die Separator DDS2300", manufactured by DISCO inc.) using a room temperature expansion unit thereof. Specifically, the dicing tape of the dicing tape with the adhesive film of the semiconductor wafer subjected to the cold expansion step is expanded by the normal temperature expansion means of the apparatus. In this room temperature expansion step, the temperature was 23 ℃, the expansion rate was 1 mm/sec, and the expansion amount was 10mm. Then, the edge portion of the dicing tape outside the work attaching region is subjected to heat shrinkage treatment (heat shrinkage). In this treatment, the temperature of the hot air for heating was 250 ℃, the air volume thereof was 40L/min, the heating distance (distance from the hot air outlet to the object to be heated) was 20mm, and the rotational speed of the stage holding the dicing tape with the work was 3 °/sec.

Evaluation of severance

For going throughThe above procedure was followed by carrying out 300mJ/cm of the adhesive layer of the dicing tape with each adhesive film of the work at 20℃over the dicing tape ² Ultraviolet radiation of (a) is provided. Thereafter, an attempt was made to pick up the semiconductor chip with the tape adhesive film from the dicing tape using a die bonding apparatus (trade name "diebond SPA-300", manufactured by new co., ltd.). In this step, the number of chips that have been tried to be picked up was set to 100, and the pickup height was set to 350 μm. The case where the semiconductor chips with the adhesive film were picked up appropriately was regarded as an index of the severance of the adhesive film from the work carried by the dicing tape with the adhesive film, and the case where the number of chips that could be picked up in the present step in the form of the semiconductor chips with the adhesive film among 100 semiconductor chips tried to be picked up was 99 or more was evaluated as "good" and the case where the number of chips that could be picked up in the form of the semiconductor chips with the adhesive film was 98 or less was evaluated as "bad" with respect to the severance of the adhesive film. The results are shown in Table 1.

Assessment of float inhibition

After each dicing tape with adhesive film of the work, which underwent the above-described process (the process until heat shrinkage), was left at rest at room temperature for 3 hours, the adhesive film in the semiconductor chip with adhesive film was observed to float from the dicing tape using a microscope. Then, the ratio of the area of the floating generated between the dicing tape and the adhesive film to the total area of the semiconductor chip set area where the tape adhesive film should be formed on the dicing tape after the two expansion steps described above was obtained. The case where the floating was less likely to occur (floating suppression) after the expansion step was evaluated as "good" when the area of floating was less than 30%, and the case where the area was 30% or more was evaluated as "bad". The results are shown in Table 1.

Evaluation of pickup after UV irradiation at Normal temperature and high temperature

For the adhesive layer of the dicing tape of each tape-bonded film carrying the work subjected to the above-mentioned process (process until heat shrinkage), 300mJ/cm was carried out at a temperature of 25℃across the dicing tape ² Ultraviolet radiation of (a) is provided. Thereafter, the chip is usedThe bonding apparatus (trade name "diebond SPA-300", manufactured by new co., ltd.) attempted to pick up the semiconductor chips with the adhesive film from the dicing tape (pickup step 1). In this step, the number of chips to be picked up was set to 50, and the pickup height was set to 350. Mu.m.

The dicing tapes (with work pieces) of the adhesive films of examples 1 to 3 and comparative examples 1 and 2, which were prepared separately and subjected to the above-described process (the process up to heat shrinkage), were placed on a hot plate at a set temperature of 60 ℃ so that the work pieces and/or the semiconductor chip side thereof were in contact with the hot plate surface. The adhesive layer of the dicing tape with the adhesive film was subjected to 300mJ/cm in such a heated state at 60℃over the dicing tape ² Ultraviolet radiation of (a) is provided. Thereafter, an attempt was made to pick up the semiconductor chip with the tape adhesive film from the dicing tape using a die bonding apparatus (trade name "diebond SPA-300", manufactured by new co., ltd.) (pickup step 2). In this step, the number of chips to be picked up was set to 50, and the pickup height was set to 350. Mu.m.

The picking-up property of the adhesive film-attached semiconductor chips from the dicing tape after the irradiation of the ultraviolet rays to the dicing tape adhesive layer was evaluated as "good" when 50 adhesive film-attached semiconductor chips as the object of the picking-up in each of the above 1 st picking-up step and the 2 nd picking-up step were all able to be picked up, and as "bad" when even one adhesive film-attached semiconductor chip was not able to be picked up out of the total number of the objects of the picking-up 100 in the two picking-up steps. The results are shown in Table 1. Specifically, the number of semiconductor chips with adhesive films that cannot be picked up in the 2 nd pick-up step was 1 or more in the dicing tapes with adhesive films of comparative examples 1 and 2.

[ Table 1 ]

Claims

1. A dicing tape with an adhesive film, comprising:

dicing tape having laminated structure comprising substrate and ultraviolet-curable adhesive layer, and

an adhesive film which is peelably bonded to the adhesive layer of the dicing tape,

the adhesive layer comprises an acrylic polymer in which the proportion of isocyanate group-containing (meth) acrylate is 12 to 25mol% and the proportion of hydroxyl group-containing monomer is 13 to 30mol%,

the adhesive film comprises an acrylic resin,

the ratio of the 1 st peel adhesion to the 2 nd peel adhesion is 0.8 to 2, and the 1 st peel adhesion is 300mJ/cm at a temperature of 22 DEG C ² The 1 st peel adhesion between the adhesive layer and the adhesive film in the 1 st test piece irradiated with ultraviolet rays, as measured by a T-type peel test at 23℃and a peel speed of 300 mm/min, the 2 nd peel adhesion being 300mJ/cm at a temperature of 60 ℃ ² The 2 nd peel adhesion between the adhesive layer and the adhesive film in the 2 nd test piece irradiated with ultraviolet rays was measured by a T-type peel test at 23℃and a peel speed of 300 mm/min.

2. The dicing tape of the tape-adhesive film according to claim 1, wherein the 1 st peel adhesion is 0.03 to 0.15N/20mm.

3. The dicing tape with an adhesive film according to claim 1 or 2, wherein the peel adhesion between the adhesive layer and the adhesive film, as measured by a T-type peel test at 23 ℃ and a peel speed of 300 mm/min, is 1.5 to 4.5N/20mm.

4. The dicing tape with adhesive film according to claim 1 or 2, wherein the peel adhesion between the adhesive layer and the adhesive film, as measured by a T-type peel test at-5 ℃ and a peel speed of 300 mm/min, is 0.5 to 2N/20mm.

5. The dicing tape with an adhesive film according to claim 1 or 2, wherein the adhesive film has a storage modulus at 25 ℃ of 1 to 5GPa.

6. The dicing tape with an adhesive film according to claim 1 or 2, wherein the adhesive film has a storage modulus at-5 ℃ of 3 to 5GPa.

7. The dicing tape of the tape-adhesive film according to claim 1 or 2, wherein in a tensile test performed on a dicing tape test piece having a width of 10mm under conditions of an initial inter-chuck distance of 100mm, -5 ℃ and a tensile speed of 300 mm/min, a tensile stress of 3 to 12MPa is exhibited at a strain value of 20%.