CN109148350B - Dicing tape-integrated adhesive sheet - Google Patents

Dicing tape-integrated adhesive sheet Download PDF

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Publication number
CN109148350B
CN109148350B CN201810680930.4A CN201810680930A CN109148350B CN 109148350 B CN109148350 B CN 109148350B CN 201810680930 A CN201810680930 A CN 201810680930A CN 109148350 B CN109148350 B CN 109148350B
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CN
China
Prior art keywords
dicing tape
adhesive sheet
layer
adhesive
film
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Application number
CN201810680930.4A
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Chinese (zh)
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CN109148350A (en
Inventor
木村龙一
志贺豪士
高本尚英
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Nitto Denko Corp
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/245—Vinyl resins, e.g. polyvinyl chloride [PVC]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

Abstract

The invention provides a dicing tape-integrated adhesive sheet which is suitable for realizing good dicing of an adhesive sheet in a dicing expansion process using the dicing tape-integrated adhesive sheet for obtaining a semiconductor chip with an adhesive film by singulation of a semiconductor wafer. The dicing tape-integrated adhesive sheet (X) of the invention comprises a dicing tape (20) and an adhesive sheet. The dicing tape (20) has a laminated structure including a base material (21) and an adhesive layer (22). The adhesive sheet is releasably adhered to the adhesive layer (22) of the dicing tape (20). The adhesive sheet is, for example, a film (10) for protecting the back surface of a semiconductor chip. The adhesive sheet test piece having a width of 2mm has a breaking strength of 1.2N or less and an elongation at break of 1.2% or less in a tensile test conducted under conditions of an initial chuck spacing of 16mm, -15 ℃ and a load increase rate of 1.2N/min.

Description

Dicing tape-integrated adhesive sheet
Technical Field
The present invention relates to a dicing tape-integrated adhesive sheet that can be used in a manufacturing process of a semiconductor device.
Background
In the manufacturing process of a semiconductor device, a dicing tape-integrated adhesive sheet having a size corresponding to a semiconductor wafer as a work is bonded to the semiconductor wafer, and then the semiconductor wafer is singulated to obtain a semiconductor chip with an adhesive film. Examples of the dicing tape-integrated adhesive sheet include dicing tape-integrated back surface protective films, so-called dicing die bonding films, and the like. The dicing tape-integrated back surface protective film has a dicing tape having a laminated structure of a base material and an adhesive layer, and a back surface protective film that adheres to the adhesive layer, and is used for obtaining a semiconductor chip accompanied by an adhesive film having a chip size corresponding to that for back surface protection of the semiconductor chip. On the other hand, the dicing die bonding film has a dicing tape having a laminated structure of a base material and an adhesive layer, and a die bonding film adhered to the adhesive layer, and is used for obtaining a semiconductor chip accompanied by an adhesive film for die bonding corresponding to the chip size. These techniques related to dicing tape-integrated adhesive sheets are described in, for example, patent documents 1 to 4 below.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2007-2173
Patent document 2: japanese patent application laid-open No. 2010-177401
Patent document 3: japanese patent laid-open publication No. 2011-151360
Patent document 4: japanese patent laid-open publication 2016-213244
Disclosure of Invention
Problems to be solved by the invention
As one of methods for obtaining a semiconductor chip with an adhesive film for die bonding using a dicing die bonding film, a method is known in which a dicing tape in the dicing die bonding film is subjected to a process for expanding and cutting the die bonding film. In this method, first, a semiconductor wafer as a workpiece is bonded to a die bonding film that is a dicing die bonding film. The semiconductor wafer is processed so as to be capable of being diced and singulated into a plurality of semiconductor chips, for example, in the subsequent dicing of the die bonding film. Next, the dicing tape for dicing the die-bonding film is expanded (expansion step for dicing) in order to sever the die-bonding film so as to generate a plurality of adhesive film chips each adhering to the semiconductor chip from the die-bonding film on the dicing tape. In this expanding step, the dicing is also performed at a portion corresponding to the dicing portion of the die bonding film in the semiconductor wafer on the die bonding film, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing die bonding film or dicing tape. Then, for example, after the cleaning step, each semiconductor chip is lifted up from the lower side of the dicing tape by the pin member of the pickup mechanism together with the adhesive film corresponding to the chip size adhered thereto, and is picked up from the dicing tape. Thus, a semiconductor chip with an adhesive film for a die bonding film can be obtained. The semiconductor chip with the adhesive film is fixed to the mounting substrate by die bonding through the adhesive film.
When the dicing tape-integrated adhesive sheet is used in the above-described dicing expansion step, the adhesive sheet in the dicing tape-integrated adhesive sheet needs to be suitably diced at a predetermined portion to be diced in the expansion step.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a dicing tape-integrated adhesive sheet suitable for achieving good dicing of the adhesive sheet in an expanding process for dicing using the dicing tape-integrated adhesive sheet in order to obtain semiconductor chips with adhesive films by singulation of semiconductor wafers.
Solution for solving the problem
According to the present invention, a dicing tape-integrated adhesive sheet can be provided. The dicing tape-integrated adhesive sheet includes a dicing tape and an adhesive sheet. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive sheet is releasably adhered to the adhesive layer in the dicing tape. The adhesive sheet has a breaking strength of 1.2N or less, preferably 1.1N or less, more preferably 1N or less in a tensile test conducted on an adhesive sheet test piece having a width of 2mm under conditions of an initial chuck spacing of 16mm, -15 ℃ and a load increase rate of 1.2N/min. At the same time, the elongation at break (ratio of the length of the stretched portion at break to the length before stretching) of the adhesive sheet in the same tensile test is 1.2% or less, preferably 1.1% or less, and more preferably 1% or less. The dicing tape-integrated adhesive sheet having such a configuration can be used in the manufacturing process of a semiconductor device. Specifically, the dicing tape-integrated adhesive sheet of the present invention is a dicing tape-integrated back surface protective film having a structure in which a so-called back surface protective film is used as an adhesive sheet, and can be used for obtaining a semiconductor chip accompanied by an adhesive film corresponding to a chip size for protecting the back surface of the semiconductor chip. The dicing tape-integrated adhesive sheet of the present invention can be used to obtain a semiconductor chip accompanied by an adhesive film for die bonding corresponding to the size of a chip as a dicing die bonding film having a structure in which a so-called die bonding film is used for the adhesive sheet.
As described above, in the dicing tape-integrated adhesive sheet, the breaking strength of the adhesive sheet test piece having a width of 2mm in the tensile test performed under the conditions of 16mm from the initial chuck to 15 ℃ and a load increase rate of 1.2N/min is 1.2N or less, preferably 1.1N or less, more preferably 1N or less. With this configuration, when a semiconductor chip with an adhesive film is obtained in the manufacturing process of a semiconductor device and a dicing expansion step is performed using the dicing tape-integrated adhesive sheet, it is preferable to suppress a dicing force to be applied to the adhesive sheet in order to sever the adhesive sheet on the dicing tape.
As described above, in the adhesive sheet of the dicing tape-integrated adhesive sheet, the elongation at break of the adhesive sheet test piece having a width of 2mm in the tensile test performed under the conditions of an initial chuck pitch of 16mm, -15 ℃ and a load increase rate of 1.2N/min is 1.2% or less, preferably 1.1% or less, more preferably 1% or less. With this configuration, when a semiconductor chip with an adhesive film is obtained in the manufacturing process of a semiconductor device and the dicing-tape-integrated adhesive sheet is used to perform the dicing expansion step, it is preferable to suppress the tensile length required for dicing the adhesive sheet on the dicing tape.
As described above, the dicing tape-integrated adhesive sheet of the present invention is suitable for suppressing the breaking force to be applied to the adhesive sheet in order to break the adhesive sheet on the dicing tape, and is suitable for suppressing the stretching length of the adhesive sheet for the breaking. Such dicing tape-integrated adhesive sheet is suitable for achieving good dicing of the adhesive sheet when used in a dicing expansion step for obtaining a semiconductor chip with an adhesive film by singulation of a semiconductor wafer. Specifically, examples and comparative examples described below are shown.
The adhesive sheet of the dicing tape-integrated adhesive sheet preferably has a laminated structure including a 1 st layer that is releasably adhered to the adhesive layer of the dicing tape and a 2 nd layer on the 1 st layer. Such a configuration is suitable for, for example, independently exhibiting characteristics required for the dicing tape pressure-sensitive adhesive layer side surface of the pressure-sensitive adhesive sheet and characteristics required for the work attachment surface facing the surface. In addition, from the viewpoint of satisfying the functions required for the 1 st layer and the 2 nd layer in the adhesive sheet, the ratio of the thickness of the 1 st layer to the thickness of the 2 nd layer is preferably 0.2 to 4, more preferably 0.2 to 1.5, still more preferably 0.3 to 1.3, still more preferably 0.6 to 1.1.
In the case where the adhesive sheet of the dicing tape-integrated adhesive sheet is a back surface protective film, it is preferable that the 1 st layer has thermosetting property and the 2 nd layer shows thermoplastic property. The layer 1 of the present invention has a thermosetting structure, and is suitable for ensuring visibility of the imprint information when the surface of the layer 1 of the back surface protective film is subjected to a high temperature process such as a so-called reflow process after being subjected to imprinting by laser marking. In the present invention, the 1 st layer has thermosetting properties and the 2 nd layer has thermoplastic properties, and thus, the back protective film is suitable for achieving good cutting in the above-described cutting and expanding step, as compared with a structure in which the back protective film is made of a single thermosetting layer, for example. That is, the above-described constitution in which the 1 st layer of the back surface protective film has thermosetting property and the 2 nd layer exhibits thermoplastic property is preferable in terms of achieving both of ensuring the visibility of the imprint information in the back surface protective film and good severance.
Drawings
Fig. 1 is a schematic cross-sectional view of a dicing tape-integrated adhesive sheet according to an embodiment of the invention.
Fig. 2 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 3 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 4 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 5 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 6 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 7 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 8 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 9 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 10 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Fig. 11 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in fig. 1.
Description of the reference numerals
X-cut tape integrated adhesive sheet
10 10' film (adhesive sheet)
20. Cutting belt
21. Substrate material
22. Adhesive layer
W,30A,30B semiconductor wafers
30C semiconductor wafer separator
30a modified region
30b dividing groove
31. Semiconductor chip
Detailed Description
Fig. 1 is a schematic cross-sectional view of a dicing tape-integrated adhesive sheet X according to an embodiment of the present invention. The dicing tape-integrated adhesive sheet X is used in a manufacturing process of a semiconductor device, and has a laminated structure including a film 10 as an adhesive sheet and a dicing tape 20. In the present embodiment, the film 10 is a back surface protective film bonded to a back surface which is a circuit non-formation surface of a semiconductor wafer or the like as a workpiece. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The adhesive layer 22 has an adhesive surface 22a on the film 10 side. Is releasably adhered to the film 10 with respect to the adhesive layer 22 or the adhesive surface 22a thereof. The dicing tape-integrated adhesive sheet X has a disc shape having a size corresponding to a semiconductor wafer or the like as a workpiece. The dicing tape-integrated adhesive sheet X, specifically, the dicing tape-integrated back surface protective film can be used in an expanding process, for example, as described later, for obtaining a semiconductor chip accompanied by an adhesive film corresponding to a chip size for protecting the back surface of the semiconductor chip.
The film 10 as the back surface protective film has a laminated structure including a laser marking layer 11 (layer 1) and a wafer fixing layer 12 (layer 2). The laser marking layer 11 is located on the dicing tape 20 side of the film 10 and is in close contact with the dicing tape 20. In the manufacturing process of the semiconductor device, laser marking is performed on the surface of the laser marking layer 11 on the dicing tape 20 side. In the present embodiment, the laser marking layer 11 contains a thermosetting component and is in a state of having been thermally cured. The wafer fixing layer 12 is positioned on the side of the film 10 to which a workpiece such as a semiconductor wafer is bonded, and in this embodiment, is in an uncured state and exhibits thermoplasticity.
The laser marking layer 11 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as the resin component, or may have a composition containing a thermoplastic resin accompanied by a thermosetting functional group capable of reacting with a curing agent to generate bonding.
The thermosetting resin when the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin may be, for example: epoxy resins, phenolic resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimide resins. The laser marking layer 11 may contain one kind of thermosetting resin, and may also contain two or more kinds of thermosetting resins. The epoxy resin is preferably used as the thermosetting resin in the laser marking layer 11 of the film 10, because the content of ionic impurities and the like originating from the film 10, which are the cause of corrosion of the semiconductor chip to be protected by the back surface protective film formed as described later, tends to be small. In addition, as a curing agent for making the epoxy resin exhibit thermosetting properties, a phenol resin is preferable.
Examples of the epoxy resin include: bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, o-cresol novolac type epoxy resin, trifunctional epoxy resin such as triphenylmethane type epoxy resin and tetraphenylethane type epoxy resin, polyfunctional epoxy resin. The epoxy resin may also be exemplified by: hydantoin type epoxy resins, triglycidyl isocyanurate type epoxy resins, and glycidylamine type epoxy resins. The laser marking layer 11 may contain one kind of epoxy resin, or may contain two or more kinds of epoxy resins.
The phenolic resin functions as a curing agent for the epoxy resin, and examples of such phenolic resin include: phenolic novolak resins such as phenol novolak resins, phenol aralkyl resins, cresol novolak resins, t-butylphenol novolak resins and nonylphenol novolak resins. The phenolic resin may be: resol type phenolic resins and polystyrene such as poly-p-hydroxystyrene. As the phenolic resin in the laser marking layer 11, particularly preferable is: phenol novolac resins and phenol aralkyl resins. The laser marking layer 11 may contain one kind of phenolic resin or two or more kinds of phenolic resins as a curing agent for the epoxy resin.
When the laser marking layer 11 contains an epoxy resin and a phenolic resin as a curing agent thereof, the two resins are blended in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, relative to 1 equivalent of epoxy groups in the epoxy resin and hydroxyl groups in the phenolic resin. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenolic resin can be sufficiently performed when the laser marking layer 11 is cured.
The content of the thermosetting resin in the laser marking layer 11 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, from the viewpoint of appropriately curing the laser marking layer 11.
The thermoplastic resin in the laser marking layer 11 is, for example, responsible for an adhesive function, and examples of the thermoplastic resin when the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin include: acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon, 6-nylon, saturated polyester resin such as phenoxy resin, polyethylene terephthalate, polybutylene terephthalate, polyamide imide resin, and fluorine resin. The laser marking layer 11 may contain one kind of thermoplastic resin, and may contain two or more kinds of thermoplastic resins. The thermoplastic resin in the laser marking layer 11 is preferably an acrylic resin in view of the low ionic impurities and high heat resistance.
When the laser marking layer 11 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the largest amount of monomer units derived from (meth) acrylic acid esters in mass ratio. "(meth) acrylic" means "acrylic" and/or "methacrylic".
Examples of the (meth) acrylate ester that is a monomer unit for forming the acrylic resin, that is, the (meth) acrylate ester that is a constituent monomer of the acrylic resin include: alkyl (meth) acrylates, cycloalkyl (meth) acrylates and aryl (meth) acrylates. Examples of the alkyl (meth) acrylate include: methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, sec-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (i.e., lauryl), tridecyl, tetradecyl, hexadecyl, octadecyl and eicosyl (meth) acrylates. Examples of the cycloalkyl (meth) acrylate include: cyclopentyl and cyclohexyl (meth) acrylates. Examples of the aryl (meth) acrylate include: phenyl (meth) acrylate and benzyl (meth) acrylate. As the constituent monomer of the acrylic resin, one type of (meth) acrylate may be used, and two or more types of (meth) acrylates may be used. The acrylic resin may be obtained by polymerizing a raw material monomer for forming the acrylic resin. Examples of the polymerization method include: solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.
For the acrylic resin, for example, one or two or more other monomers copolymerizable with the (meth) acrylic acid ester may be used as the constituent monomers for the purpose of modifying the cohesive force and heat resistance thereof. Examples of such monomers include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile. Examples of the carboxyl group-containing monomer include: acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include: maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the epoxy group-containing monomer include: glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include: styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propane sulfonic acid, and (meth) acryloxynaphthalene sulfonic acid. Examples of the phosphate group-containing monomer include: 2-hydroxyethyl acryloyl phosphate.
The acrylic resin contained in the laser marking layer 11 is preferably a copolymer of monomers suitably selected from butyl acrylate, ethyl acrylate, acrylonitrile, acrylic acid, 2-ethylhexyl acrylate, and glycidyl acrylate. Such a configuration is preferable in view of both the visibility of the imprint information by the laser marking and the good severance in the dicing expansion step, which will be described later, in the film 10 as the back surface protective film.
When the laser marking layer 11 has a composition including a thermoplastic resin accompanied by a thermosetting functional group, for example, an acrylic resin containing a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth) acrylate esters in mass proportions. As such a (meth) acrylate, for example, the same (meth) acrylate as described above can be used as a constituent monomer of the acrylic resin contained in the laser marking layer 11. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include: glycidyl, carboxyl, hydroxyl and isocyanate groups. Among them, glycidyl groups and carboxyl groups can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. In addition, the curing agent capable of reacting with the thermosetting functional group is selected according to the kind of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenolic resin as described above can be used as the curing agent for the epoxy resin.
The composition for forming the laser marking layer 11 preferably contains a thermosetting catalyst. In order to sufficiently progress the curing reaction of the resin component or to increase the curing reaction rate at the time of curing the laser marking layer 11, it is preferable to blend a thermosetting catalyst into the composition for forming a laser marking layer. Examples of such a heat curing catalyst include: imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihaloborane-based compounds. Examples of the imidazole compound include: 2-methylimidazole, 2-undecylimidazole, 2-pentadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2' -methylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -undecylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -ethyl-4 ' -methylimidazole- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -methylimidazole- (1 ') ] -ethyl-s-triazine isocyanurate adduct, 2-phenyl-4, 5-dihydroxy-methylimidazole and 2-phenyl-4-methyl-5-hydroxy-imidazole. Examples of the triphenylphosphine compound include: triphenylphosphine, tris (butylphenyl) phosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride and benzyltriphenylphosphonium chloride. The triphenylphosphine compound also includes a compound having both a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include: tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyl triphenyl phosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine compound include: monoethanolamine trifluoroborates and dicyandiamide. Examples of the trihaloborane compound include trichloroborane. The composition for forming a laser marking layer may contain one kind of heat curing catalyst, and may also contain two or more kinds of heat curing catalysts.
The laser marking layer 11 may also contain a filler. The addition of the filler to the laser marking layer 11 is preferable in terms of adjusting physical properties such as elastic modulus, yield strength, and elongation at break of the laser marking layer 11. The filler may be: inorganic fillers and organic fillers. Examples of the constituent material of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. The constituent materials of the inorganic filler may be: elemental metals such as aluminum, gold, silver, copper, nickel, etc., alloys, amorphous carbon, graphite, etc. Examples of the constituent material of the organic filler include: polymethyl methacrylate (PMMA), polyimide, polyamideimide, polyetheretherketone, polyetherimide and polyesterimide. The laser marking layer 11 may contain one kind of filler, and may also contain two or more kinds of fillers. The filler may have various shapes such as spherical, needle-like, and plate-like. When the laser marking layer 11 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.05 to 1 μm. Such a structure in which the average particle diameter of the filler is 10 μm or less is preferable in that a sufficient filler addition effect is obtained in the laser marking layer 11 and heat resistance is ensured. The average particle size of the filler can be determined, for example, by using a photometric particle size distribution analyzer (trade name "LA-910", manufactured by horiba, inc.). When the laser marking layer 11 contains a filler, the content of the filler is preferably 10 mass% or more, more preferably 15 mass% or more, and still more preferably 20 mass% or more. The content is preferably 50 mass% or less, more preferably 47 mass% or less, and still more preferably 45 mass% or less.
The laser marking layer 11 contains a colorant in the present embodiment. The colorant may be a pigment or a dye. Examples of the coloring agent include: black-based colorant, cyan-based colorant, magenta-based colorant, and yellow-based colorant. In order to achieve high visibility of information imprinted on the laser marking layer 11 by laser marking, the laser marking layer 11 preferably contains a black-based colorant. Examples of the black colorant include: carbon black, graphite (black lead), copper oxide, manganese dioxide, azo pigments such as azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, composite oxide black pigments, anthraquinone organic black dyes, and azo organic black dyes. Examples of the carbon black include: furnace black, channel black, acetylene black, thermal black, and lamp black. The black colorant may also be: c.i. solvent black 3, co 7, co 22, co 27, co 29, co 34, co 43 and co 70. The black colorant may also be: c.i. direct black 17, co 19, co 22, co 32, co 38, co 51 and co 71. The black colorant may also be: c.i. acid black 1, co 2, co 24, co 26, co 31, co 48, co 52, co 107, co 109, co 110, co 119 and co 154. The black colorant may also be: c.i. disperse black 1, 3, 10 and 24. The black colorant may also be: c.i. pigment black 1 and the same 7. The laser marking layer 11 may contain one kind of colorant, and may also contain two or more kinds of colorants. The content of the colorant in the laser marking layer 11 is preferably 0.5 wt% or more, more preferably 1 wt% or more, and still more preferably 2 wt% or more. The content is preferably 10 wt% or less, more preferably 8 wt% or less, and still more preferably 5 wt% or less. These configurations concerning the colorant content are preferable in terms of achieving high visibility for information imprinted on the laser marking layer 11 by laser marking.
The laser marking layer 11 may contain one or two or more other components as necessary. Examples of the other components include: flame retardants, silane coupling agents, and ion capturing agents. Examples of the flame retardant include: antimony trioxide, antimony pentoxide and brominated epoxy resins. Examples of the silane coupling agent include: beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma-epoxypropoxypropyltrimethoxysilane and gamma-epoxypropoxypropylmethyldiethoxysilane. Examples of the ion scavenger include: hydrotalcite, bismuth hydroxide, aqueous antimony oxide (e.g., IXE-300 manufactured by Toyama Synthesis Co., ltd.), zirconium phosphate of a specific structure (e.g., IXE-100 manufactured by Toyama Synthesis Co., ltd.), and magnesium silicate (e.g., "KYOWAAD 600" manufactured by Kyowa Kagaku Co., ltd.) and aluminum silicate (e.g., "KYOWAAD 700" manufactured by Kyowa Kagaku Co., ltd.). Compounds that form complexes with metal ions can also be used as ion traps. Examples of such a compound include: triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among them, triazole-based compounds are preferable from the viewpoint of stability of a complex formed with a metal ion. Examples of such triazole compounds include: 1,2, 3-benzotriazole, 1- { N, N-bis (2-ethylhexyl) aminomethyl } benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) benzotriazole, 6- (2-benzotriazolyl) -4-tert-octyl-6 ' -tert-butyl-4 ' -methyl-2, 2' -methylenebisphenol, 1- (2, 3-dihydroxypropyl) benzotriazole, 1- (1, 2-dicarboxydiphenyl) benzotriazole, 1- (2-ethylhexyl aminomethyl) benzotriazole, 2, 4-di-tert-amyl-6- { (H-benzotriazol-1-yl) methyl } phenol, 2- (2-hydroxy-5-tert-butylphenyl) -2-H-benzotriazole, octyl-3- [ 3-tert-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] propionate, 2-ethylhexyl-3- [ 3-tert-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1, 3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) -benzotriazole, 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- [ 2-hydroxy-2-benzyl ] -2-hydroxy-3, 5-di-methylbenzotriazole, 2-hydroxy-1, 5-dimethylbenzyl ] -2H-benzotriazol-1 2,2' -methylenebis [6- (2H-benzotriazol-2-yl) -4- (1, 3-tetramethylbutyl) phenol ], 2- [ 2-hydroxy-3, 5-bis (α, α -dimethylbenzyl) phenyl ] -2H-benzotriazol, and methyl-3- [3- (2H-benzotriazol-2-yl) -5-tert-butyl-4-hydroxyphenyl ] propionate. In addition, a predetermined hydroxyl group-containing compound such as a quinol compound, a hydroxyanthraquinone compound, a polyhydric phenol compound, or the like can also be used as the ion scavenger. Specific examples of such hydroxyl group-containing compounds include: 1, 2-benzenediol, alizarin, anthramagenta, tannin, gallic acid, methyl gallate and pyrogallol.
The wafer fixing layer 12 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, and may also have a composition containing a thermoplastic resin accompanied by a thermosetting functional group capable of reacting with a curing agent to generate bonding.
The thermosetting resin when the wafer fixing layer 12 has a composition including a thermosetting resin and a thermoplastic resin may be, for example: epoxy resins, phenolic resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimide resins. The wafer fixing layer 12 may contain one kind of thermosetting resin, and may contain two or more kinds of thermosetting resins. The epoxy resin is preferably used as the thermosetting resin in the wafer fixing layer 12 of the film 10, because the content of ionic impurities or the like originating from the film 10, which are the corrosion cause of the semiconductor chip to be protected by the back surface protective film formed as described later, tends to be small.
Examples of the epoxy resin in the wafer fixing layer 12 include the above-mentioned epoxy resin having a composition including a thermosetting resin and a thermoplastic resin as the laser marking layer 11. Phenol novolac type epoxy resins, o-cresol novolac type epoxy resins, biphenyl type epoxy resins, triphenylmethane type epoxy resins, and tetraphenylethane type epoxy resins are preferable as the epoxy resins in the wafer fixing layer 12 in view of their high reactivity with phenolic resins as curing agents and excellent heat resistance.
Examples of the phenolic resin that can function as a curing agent for the epoxy resin in the wafer fixing layer 12 include the phenolic resin described above as a curing agent for the epoxy resin in the laser marking layer 11. The wafer fixing layer 12 may contain one kind of phenol resin or two or more kinds of phenol resins as a curing agent for the epoxy resin.
When the wafer fixing layer 12 contains an epoxy resin and a phenolic resin as a curing agent thereof, the two resins are blended in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, relative to 1 equivalent of epoxy groups in the epoxy resin and hydroxyl groups in the phenolic resin. Such a configuration is preferable in that the curing reaction between the epoxy resin and the phenolic resin is sufficiently performed when the wafer fixing layer 12 is cured.
The content ratio of the thermosetting resin in the wafer fixing layer 12 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, from the viewpoint of appropriately curing the wafer fixing layer 12.
The thermoplastic resin in the wafer holding layer 12 is responsible for, for example, an adhesive function. The thermoplastic resin when the wafer fixing layer 12 has a composition including a thermosetting resin and a thermoplastic resin may be, for example, the thermoplastic resin when the laser marking layer 11 has a composition including a thermosetting resin and a thermoplastic resin. The wafer fixing layer 12 may contain one kind of thermoplastic resin, and may contain two or more kinds of thermoplastic resins. The thermoplastic resin in the wafer fixing layer 12 is preferably an acrylic resin in view of the low ionic impurities and high heat resistance.
When the wafer fixing layer 12 contains an acrylic resin as the thermoplastic resin, the acrylic resin preferably contains the largest amount of monomer units derived from (meth) acrylic acid esters in mass ratio. As the (meth) acrylate used to form the monomer unit of such an acrylic resin, for example, the above-mentioned (meth) acrylate used as a constituent monomer of an acrylic resin when the laser marking layer 11 contains the acrylic resin as a thermoplastic resin can be used. As a constituent monomer of the acrylic resin in the wafer fixing layer 12, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. For example, the acrylic resin may contain one or two or more other monomers copolymerizable with the (meth) acrylic acid ester as constituent monomers for the purpose of modifying the cohesive force and heat resistance. As such a monomer, for example, the above-mentioned substances as other monomers copolymerizable with the (meth) acrylic acid ester used for forming the acrylic resin in the laser marking layer 11 can be used.
The acrylic resin contained in the wafer fixing layer 12 is preferably a copolymer of monomers suitably selected from butyl acrylate, ethyl acrylate, acrylonitrile, acrylic acid, 2-ethylhexyl acrylate, and glycidyl acrylate. Such a configuration is preferable in view of the film 10 as the back surface protective film, which is compatible with the adhesion to the work and good severance to be described later in the dicing and expanding process.
When the wafer fixing layer 12 has a composition including a thermoplastic resin having a thermosetting functional group, for example, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth) acrylate esters in mass proportions. As such a (meth) acrylate, for example, the same (meth) acrylate as the above-described one as a constituent monomer of the acrylic resin contained in the laser marking layer 11 can be used. On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include: glycidyl, carboxyl, hydroxyl and isocyanate groups. Among them, glycidyl groups and carboxyl groups can be suitably used. In addition, the curing agent capable of reacting with the thermosetting functional group is selected according to the kind of the thermosetting functional group in the thermosetting functional group-containing acrylic resin. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, the same phenolic resin as the above-mentioned one as the curing agent for epoxy resin can be used as the curing agent.
The composition used to form the wafer holding layer 12 preferably does not contain a thermal curing catalyst. When a thermosetting catalyst is blended in the composition for forming the wafer fixing layer 12, for example, the above-mentioned materials as thermosetting catalysts that can be blended in the composition for forming a laser marking layer can be used as the thermosetting catalyst.
The wafer holding layer 12 may contain a filler. From the viewpoint of adjusting physical properties such as the elastic modulus, yield strength, and elongation at break of the wafer fixing layer 12, it is preferable to blend a filler into the wafer fixing layer 12. Examples of the filler in the wafer fixing layer 12 include the above-mentioned materials as the filler in the laser marking layer 11. The wafer fixing layer 12 may contain one kind of filler, and may contain two or more kinds of fillers. The filler may have various shapes such as spherical, needle-like, and scaly. When the wafer fixing layer 12 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.05 to 1 μm. The structure in which the average particle diameter of the filler is 10 μm or less is preferable in that the wafer fixing layer 12 has a sufficient filler addition effect and ensures heat resistance. When the wafer fixing layer 12 contains a filler, the content of the filler is preferably 10 mass% or more, more preferably 15 mass% or more, and still more preferably 20 mass% or more. The content is preferably 50 mass% or less, more preferably 47 mass% or less, and still more preferably 45 mass% or less.
The wafer holding layer 12 may also contain a colorant. Examples of the colorant in the wafer fixing layer 12 include the above-mentioned materials as the colorant in the laser marking layer 11. In order to ensure a good contrast between the laser marking region on the laser marking layer 11 side of the film 10 and the other regions and to achieve high visibility of the marking information, the wafer fixing layer 12 preferably contains a black colorant. The wafer fixing layer 12 may contain one kind of colorant, and may contain two or more kinds of colorants. The content of the colorant in the wafer fixing layer 12 is preferably 0.5 wt% or more, more preferably 1 wt% or more, and still more preferably 2 wt% or more. The content is preferably 10 wt% or less, more preferably 8 wt% or less, and still more preferably 5 wt% or less. These formations concerning the colorant content are preferable in achieving the above-described good discrimination for the imprint information by laser marking.
The wafer fixing layer 12 may contain one or two or more other components as needed. Examples of the other components include the specific flame retardant, silane coupling agent, and ion scavenger described above with respect to the laser marking layer 11.
The thickness of the film 10 having a laminated structure including the laser marking layer 11 and the wafer fixing layer 12 is preferably 8 μm or more, more preferably 10 μm or more, and preferably 20 μm or less, more preferably 15 μm or less. The ratio of the thickness of the laser marking layer 11 (layer 1) to the thickness of the wafer fixing layer 12 (layer 2) is preferably 0.2 to 4, more preferably 0.2 to 1.5, still more preferably 0.3 to 1.3, and still more preferably 0.6 to 1.1.
For the film 10 (adhesive sheet as the back surface protective film) as described above, the film test piece (adhesive sheet test piece) having a width of 2mm has a breaking strength of 1.2N or less, preferably 1.1N or less, more preferably 1N or less in a tensile test performed at an initial chuck spacing of 16mm, -15 ℃ and under a load increase rate of 1.2N/min. At the same time, the elongation at break (ratio of the length of the stretched portion at break to the length before stretching) of the film 10 in the same stretching test is 1.2% or less, preferably 1.1% or less, and more preferably 1% or less. For these breaking strength and elongation at break, it can be measured in a tensile test performed using a TMA tester (trade name "TMA Q400", TA INSTRUMENT co., ltd.). In this measurement, after a test piece cut out from the film 10 and set in a tester was held at-15℃for 5 minutes, the operation mode of the tester was set to a tensile mode, and a tensile test was performed at 16mm between the initial chucks, at-15℃and at a load increase rate of 1.2N/min as described above. The adjustment of the breaking strength and the elongation at break of the film 10 can be performed by adjusting the composition of constituent monomers of thermoplastic resins such as acrylic resins contained in the respective layers in the film 10, adjusting the thickness of the respective layers in the film 10, and the like.
The base material 21 of the dicing tape 20 in the dicing tape-integrated adhesive sheet X is a component that functions as a support in the dicing tape 20 or the dicing tape-integrated adhesive sheet X. The substrate 21 is, for example, a plastic substrate, and a plastic film can be suitably used as the plastic substrate. Examples of the constituent material of the plastic base material include: polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamide, fluorine resin, cellulose-based resin, and silicone resin. Examples of the polyolefin include: low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer and ethylene-hexene copolymer. Examples of the polyester include: polyethylene terephthalate, polyethylene naphthalate and polybutylene terephthalate. The base material 21 may be formed of one material or two or more materials. The substrate 21 may have a single-layer structure or a multi-layer structure. When the pressure-sensitive adhesive layer 22 on the substrate 21 is ultraviolet-curable as described below, the substrate 21 preferably has ultraviolet-light transmittance. When the base material 21 is made of a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. In the present embodiment, the substrate 21 is preferably a polyvinyl chloride substrate or an ethylene-vinyl acetate copolymer substrate.
When the dicing tape-integrated adhesive sheet X is used, for example, when the dicing tape 20 or the base material 21 is contracted by local heating, the base material 21 preferably has heat shrinkability. In the case where the base material 21 is made of a plastic film, the base material 21 is preferably a biaxially oriented film in order to achieve isotropic heat shrinkability with respect to the dicing tape 20 or the base material 21. The heat shrinkage of the dicing tape 20 or the substrate 21 by the heat treatment test performed at the heating temperature of 100 ℃ and the heat treatment time of 60 seconds is preferably 2 to 30%, more preferably 2 to 25%, still more preferably 3 to 20%, still more preferably 5 to 20%. The heat shrinkage rate means at least one of a so-called MD heat shrinkage rate and a so-called TD heat shrinkage rate.
The surface of the substrate 21 on the side of the adhesive layer 22 may be subjected to a physical treatment, a chemical treatment, or a primer treatment for improving adhesion to the adhesive layer 22. Examples of the physical treatment include: corona treatment, plasma treatment, sandblasting treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment.
From the viewpoint of ensuring the strength of the base material 21 for functioning as a support in the dicing tape 20 and/or dicing tape-integrated adhesive sheet X, the thickness of the base material 21 is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably 60 μm or more. In addition, from the viewpoint of achieving a suitable flexibility in the dicing tape 20 or the dicing tape-integrated adhesive sheet X, the thickness of the base material 21 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less.
The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive may be an adhesive (adhesive force-reducible adhesive) which intentionally reduces the adhesive force by an external action during the use of the dicing tape-integrated adhesive sheet X, or an adhesive (adhesive force-nondegradable adhesive) which hardly reduces the adhesive force by an external action during the use of the dicing tape-integrated adhesive sheet X. In the case of using an adhesive force-reducible adhesive or an adhesive force-nondegradable adhesive as the adhesive in the adhesive layer 22, the method, condition, etc. for singulating the semiconductor chips singulated by using the dicing tape-integrated adhesive sheet X, and the manner of use of the dicing tape-integrated adhesive sheet X may be appropriately selected.
When an adhesive force-reducible adhesive is used as the adhesive in the adhesive layer 22, a state in which the adhesive layer 22 exhibits a relatively high adhesive force and a state in which it exhibits a relatively low adhesive force can be used differently in the process of using the dicing tape-integrated adhesive sheet X. For example, when the dicing tape-integrated adhesive sheet X is used in the expanding step described later, the high-adhesion state of the adhesive layer 22 is used to suppress and prevent the film 10 from lifting off and peeling off from the adhesive layer 22, and the low-adhesion state of the adhesive layer 22 is used to facilitate the picking up of the semiconductor chip with a film from the adhesive layer 22 in the picking-up step described later for picking up the semiconductor chip with a film from the dicing tape 20 of the dicing tape-integrated adhesive sheet X.
Examples of such adhesive force-reducible adhesive agents include: an adhesive (radiation curable adhesive) curable by irradiation with radiation during the use of the dicing tape-integrated adhesive sheet X, a heat-foamable adhesive, or the like. In the adhesive layer 22 of the present embodiment, one type of adhesive agent with reduced adhesive force may be used, or two or more types of adhesive agent with reduced adhesive force may be used. The whole of the adhesive layer 22 may be formed of an adhesive force-reducible adhesive, or a part of the adhesive layer 22 may be formed of an adhesive force-reducible adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of an adhesive force-reducible adhesive, or a predetermined portion (for example, a central region of an attachment target region that is a work) in the adhesive layer 22 may be formed of an adhesive force-reducible adhesive, and other portions (for example, a region outside the central region that is an attachment target region of a ring frame) may be formed of an adhesive force-nondegradable adhesive. In addition, when the adhesive layer 22 has a multilayer structure, all layers of the multilayer structure may be formed by the adhesive force-reducible adhesive, or a part of the layers in the multilayer structure may be formed by the adhesive force-reducible adhesive.
Examples of the radiation-curable adhesive used for the adhesive layer 22 include adhesives of a type cured by irradiation with electron rays, ultraviolet rays, α rays, β rays, γ rays, or X rays, and adhesives of a type cured by ultraviolet rays irradiation (ultraviolet-curable adhesives) can be particularly suitably used.
Examples of the radiation curable adhesive used for the adhesive layer 22 include a base polymer such as an acrylic polymer as an acrylic adhesive; and an additive type radiation curable adhesive comprising a radiation polymerizable monomer component and an oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond.
The above acrylic polymer preferably contains the most monomer units derived from (meth) acrylic esters in mass proportion. Examples of the (meth) acrylate used for forming the monomer unit of the acrylic polymer, that is, the (meth) acrylate as the constituent monomer of the acrylic polymer include: the alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate, more specifically, (meth) acrylic esters similar to those described above with respect to the acrylic resin in the laser marking layer 11 of the film 10 are exemplified. As the constituent monomer of the acrylic polymer, one type of (meth) acrylate may be used, and two or more types of (meth) acrylates may be used. The constituent monomers of the acrylic polymer are preferably 2-ethylhexyl acrylate and lauryl acrylate. In addition, in order to suitably exhibit basic characteristics such as adhesion depending on the (meth) acrylate by the adhesive layer 22, the ratio of the (meth) acrylate in all the constituent monomers of the acrylic polymer is preferably 40 mass% or more, more preferably 60 mass% or more.
For example, the acrylic polymer may further contain monomer units derived from one or two or more other monomers copolymerizable with the (meth) acrylic acid ester for the purpose of modifying the cohesive force and heat resistance thereof. Examples of such monomers include: examples of the carboxyl group-containing monomer, acid anhydride monomer, hydroxyl group-containing monomer, epoxy group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide and acrylonitrile include the above-mentioned monomers which are copolymerizable with the (meth) acrylic acid ester of the acrylic resin used in the laser marking layer 11 for forming the film 10.
The acrylic polymer may further contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylate in order to form a crosslinked structure in its polymer skeleton. Examples of such polyfunctional monomers include: hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, poly (meth) glycidyl acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. "(meth) acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one type of polyfunctional monomer may be used, or two or more types of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in the entire constituent monomers of the acrylic polymer is preferably 40 mass% or less, more preferably 30 mass% or less, in terms of suitably exhibiting basic characteristics depending on the adhesiveness of the (meth) acrylic acid ester by the adhesive layer 22.
The acrylic polymer may be obtained by polymerizing a raw material monomer for forming the same. Examples of the polymerization method include: solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. In view of high cleanliness in the method for manufacturing a semiconductor device using dicing tape 20 or dicing tape-integrated adhesive sheet X, the number average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, more preferably 20 ten thousand to 300 ten thousand, because of the low molecular weight substance in the pressure-sensitive adhesive layer 22 in the dicing tape 20 or dicing tape-integrated adhesive sheet X.
The adhesive layer 22 or an adhesive for forming the same may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of a base polymer such as an acrylic polymer. Examples of the external crosslinking agent that reacts with a base polymer such as an acrylic polymer to form a crosslinked structure include: a polyisocyanate compound, an epoxy compound, a polyol compound, an aziridine compound and a melamine-based crosslinking agent. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive for forming the same is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.
Examples of the radiation-polymerizable monomer component for forming the radiation-curable adhesive include: urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component used for forming the radiation-curable adhesive include various oligomers such as polyurethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and those having a molecular weight of about 100 to 30000 are suitable. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curable adhesive can be determined within a range that can suitably reduce the adhesive force of the formed adhesive layer 22, and is preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass, relative to 100 parts by mass of the base polymer such as the acrylic polymer. Further, as the additive type radiation curable adhesive, for example, an adhesive disclosed in Japanese patent application laid-open No. 60-196956 can be used.
Examples of the radiation-curable adhesive used for the adhesive layer 22 include an internal radiation-curable adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond in a polymer side chain, a polymer main chain, or a polymer main chain end. Such an internal type radiation curable adhesive is preferable in terms of suppressing unintentional temporal changes in adhesive properties caused by movement of low molecular weight components within the formed adhesive layer 22.
The base polymer contained in the internal radiation curable adhesive is preferably a polymer having an acrylic polymer as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be used. Examples of the method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after copolymerizing a raw material monomer including a monomer having a predetermined functional group (functional group 1), a compound having a predetermined functional group (functional group 2) capable of reacting with and bonding to the functional group 1 and a radiation polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer in a state where the radiation polymerization of the carbon-carbon double bond is maintained.
Examples of the combination of the 1 st functional group and the 2 nd functional group include: carboxyl and epoxy groups, epoxy and carboxyl groups, carboxyl and aziridinyl groups, aziridinyl and carboxyl groups, hydroxyl and isocyanate groups, isocyanate groups and hydroxyl groups. Among these combinations, a combination of a hydroxyl group and an isocyanate group and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of ease of reaction tracking. Further, since it is difficult to produce a polymer having an isocyanate group with high reactivity, it is more preferable that the 1 st functional group on the acrylic polymer side is a hydroxyl group and the 2 nd functional group is an isocyanate group from the viewpoint of easiness in producing or obtaining an acrylic polymer. In this case, examples of the isocyanate compound having both a radiation polymerizable carbon-carbon double bond and an isocyanate group as the 2 nd functional group, that is, the radiation polymerizable unsaturated functional group-containing isocyanate compound include: methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate (MOI) and m-isopropenyl-alpha, alpha-dimethylbenzyl isocyanate.
The radiation curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: alpha-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketone, acyl phosphine oxides, and acyl phosphonates. Examples of the α -ketol compound include: 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethyl acetophenone, 2-methyl-2-hydroxy propiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone compound include: methoxyacetophenone, 2-dimethoxy-1, 2-diphenylethan-1-one, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1. Examples of the benzoin ether compound include: benzoin diethyl ether, benzoin isopropyl ether and anisoin methyl ether. Examples of the ketal compound include: benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compound include: 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime-based compound include: 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compound include: benzophenone, benzoylbenzoic acid and 3,3' -dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include: thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone and 2, 4-diisopropylthioxanthone. The content of the photopolymerization initiator in the radiation curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass per 100 parts by mass of the base polymer such as the acrylic polymer.
The heat-expandable adhesive used for the adhesive layer 22 is an adhesive containing a component (a foaming agent, thermally expandable microspheres, etc.) that expands and expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the inorganic foaming agent include: ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include: chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azodiisobutyronitrile, azodicarbonamide and barium azodicarbonate, hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3, 3' -disulfonyl hydrazide, 4' -oxybis (benzenesulfonyl hydrazide) and allylbis (sulfonyl hydrazide), semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4,4' -oxybis (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholino-1, 2,3, 4-thiatriazole, and N-nitrosopentamethylene tetramine such as N, N ' -dimethyl-N, N ' -dinitroso-terephthalamide. Examples of the substance that can be easily gasified and expanded by heating to form the thermally expandable microspheres include: isobutane, propane and pentane. The thermally expandable microspheres can be produced by encapsulating a substance which is easily gasified and expanded by heating in a shell-forming substance by a coagulation method, an interfacial polymerization method or the like. As the shell-forming substance, a substance exhibiting thermal melting property or a substance which can be broken by the effect of thermal expansion of the encapsulating substance can be used. Examples of such substances include: vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.
As the adhesive force non-decreasing type adhesive agent, for example, an adhesive agent in which the radiation curable adhesive agent is irradiated with radiation in advance to be cured, a so-called pressure sensitive adhesive agent, or the like can be cited as the adhesive force decreasing type adhesive agent. The radiation curable adhesive exhibits adhesion due to the polymer component even when the adhesive strength is lowered by radiation curing, depending on the type and content of the polymer component contained therein, and can exhibit adhesive strength usable for adhesive holding of an adherend in a predetermined manner of use. One kind of adhesive force non-decreasing type adhesive agent may be used for the adhesive layer 22 of the present embodiment, and two or more kinds of adhesive force non-decreasing type adhesive agents may be used. The whole of the adhesive layer 22 may be formed of an adhesive force non-decreasing type adhesive, or a part of the adhesive layer 22 may be formed of an adhesive force non-decreasing type adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of the adhesive force non-reduced adhesive, as described above, a predetermined portion (for example, a region located outside the region to be attached to the wafer as the region to be attached to the ring frame) in the adhesive layer 22 may be formed of the adhesive force non-reduced adhesive, and other portions (for example, a central region as the region to be attached to the wafer) may be formed of the adhesive force reduced adhesive. In the case where the adhesive layer 22 has a multilayer structure, all layers constituting the multilayer structure may be formed of an adhesive force non-reduced type adhesive, or a part of the layers in the multilayer structure may be formed of an adhesive force non-reduced type adhesive.
On the other hand, as the pressure-sensitive adhesive used for the adhesive layer 22, for example, an acrylic adhesive or a rubber-based adhesive using an acrylic polymer as a base polymer can be used. When the adhesive layer 22 contains an acrylic adhesive as the pressure-sensitive adhesive, the acrylic polymer as a base polymer of the acrylic adhesive preferably contains the largest amount of monomer units derived from (meth) acrylic esters in mass ratio. Examples of such an acrylic polymer include the acrylic polymers described above with respect to the radiation curable adhesive.
The adhesive layer 22 or the adhesive for forming the same may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a pigment, a colorant such as a dye, and the like in addition to the above-described components. The colorant may be a compound that is colored by irradiation with radiation. Examples of such a compound include leuco dyes.
The thickness of the adhesive layer 22 is preferably 2 to 20. Mu.m, more preferably 3 to 17. Mu.m, still more preferably 5 to 15. Mu.m. Such a configuration is preferable in terms of, for example, obtaining balance of adhesion force of the adhesive layer 22 to the film 10 before and after radiation curing when the adhesive layer 22 contains a radiation curable adhesive.
The dicing tape-integrated adhesive sheet X having the above-described configuration can be manufactured, for example, as follows.
For the production of the film 10 in the dicing tape-integrated adhesive sheet X, first, a resin film (1 st resin film) forming the laser marking layer 11 and a resin film (2 nd resin film) forming the wafer fixing layer 12 are produced separately. The 1 st resin film can be produced as follows: the resin composition for forming the laser marking layer is coated on a predetermined separator to form a resin composition layer, and then the composition layer is heated, dried and cured to produce the resin composition. Examples of the separator include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, fluorine-based release agent, plastic film surface-coated with release agent such as long-chain alkyl acrylate-based release agent, paper, etc. Examples of the method for applying the resin composition include: roll coating, screen coating, and gravure coating. In the case of producing the 1 st resin film, the heating temperature is, for example, 90 to 160℃and the heating time is, for example, 2 to 4 minutes. On the other hand, the 2 nd resin film can be produced by: the wafer fixing layer is produced by applying a resin composition for forming a wafer fixing layer onto a predetermined separator to form a resin composition layer, and then heating and drying the composition layer. In the production of the 2 nd resin film, the heating temperature is, for example, 90 to 150℃and the heating time is, for example, 1 to 2 minutes. In this way, the 1 st and 2 nd resin films can be produced in the form of separate films. Then, the exposed surfaces of the 1 st and 2 nd resin films are bonded to each other. The film 10 having a laminated structure of the laser marking layer 11 and the wafer fixing layer 12 is thus produced.
The dicing tape 20 of the dicing tape-integrated adhesive sheet X can be produced by providing the adhesive layer 22 on the prepared base material 21. For example, the resin substrate 21 can be produced by a film-forming method such as a roll-forming method, a casting method in an organic solvent, a blow extrusion method in a closed system, a T-die extrusion method, a coextrusion method, or a dry lamination method. The film or the base material 21 after the film formation may be subjected to a predetermined surface treatment as needed. For the formation of the adhesive layer 22, for example, after preparing an adhesive composition for forming an adhesive layer, first, the composition is coated on the substrate 21 or a prescribed release film and an adhesive composition layer is formed. Examples of the method for applying the adhesive composition include: roll coating, screen coating and gravure coating. Next, the adhesive composition layer is heated and dried as needed, and a crosslinking reaction is initiated as needed. The heating temperature is, for example, 80 to 150℃and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on the release film, the pressure-sensitive adhesive layer 22 accompanied by the release film is bonded to the base 21, and then the release film is peeled off. Thus, the dicing tape 20 having a laminated structure of the base material 21 and the adhesive layer 22 was produced.
In the production of the dicing tape-integrated adhesive sheet X, the laser marking layer 11 side of the film 10 is then bonded to the adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 30 to 50℃and the bonding pressure (line pressure) is, for example0.1 to 20kgf/cm. When the pressure-sensitive adhesive layer 22 contains the above-mentioned radiation curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the lamination, or the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of the base material 21 after the lamination. Alternatively, such irradiation of radiation may be performed during the production of the dicing tape-integrated adhesive sheet X (in this case, the adhesive layer 22 may be radiation-cured during the use of the dicing tape-integrated adhesive sheet X). When the pressure-sensitive adhesive layer 22 is ultraviolet-curable, the amount of ultraviolet radiation used to cure the pressure-sensitive adhesive layer 22 is, for example, 50 to 500mJ/cm 2 . The area (irradiation area R) of the dicing tape-integrated adhesive sheet X that can be irradiated as a measure for reducing the adhesive force of the adhesive layer 22 is, for example, an area other than the peripheral edge portion of the area where the film 10 is bonded in the adhesive layer 22 as shown in fig. 1.
This can produce the dicing tape-integrated adhesive sheet X. The dicing tape-integrated adhesive sheet X may be provided with a separator (not shown) on the film 10 side so as to cover at least the film 10. When the film 10 is smaller than the pressure-sensitive adhesive layer 22 of the dicing tape 20 and the pressure-sensitive adhesive layer 22 has a region to which the film 10 is not bonded, for example, a release film may be provided so as to cover at least the film 10 and the pressure-sensitive adhesive layer 22. The release film is a component for protecting the film 10 and the pressure-sensitive adhesive layer 22 from exposure, and is peeled off from the film when the dicing tape-integrated pressure-sensitive adhesive sheet X is used.
Fig. 2 to 7 show an example of a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet X.
In this semiconductor device manufacturing method, first, as shown in fig. 2 (a) and 2 (b), a modified region 30a is formed on a semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light whose focal point is aligned with the wafer from the opposite side of the wafer processing tape T1 along the dividing line thereof in a state where the semiconductor wafer W is held on the wafer processing tape T1, whereby the modified region 30a is formed in the semiconductor wafer W due to ablation by multiphoton absorption. The modified region 30a is a weakened region for separating the semiconductor wafer W into semiconductor chip units. As a method for forming the modified regions 30a on the predetermined dividing lines by laser irradiation in the semiconductor wafer, for example, japanese patent application laid-open No. 2002-192370 is described in detail, and the laser irradiation conditions in the present embodiment are appropriately adjusted within the following conditions, for example.
[ laser irradiation conditions ]
(A) Laser light
(C) The movement speed of the stage on which the semiconductor substrate is mounted is 280 mm/sec or less
Next, the semiconductor wafer W is thinned from the grinding process on the 2 nd surface Wb until the thickness reaches a predetermined value while the semiconductor wafer W is held on the wafer processing tape T1, whereby a semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips 31 is formed as shown in fig. 2 (c) (wafer thinning step). In the semiconductor wafer 30A, the modified region 30A is exposed on the 2 nd surface Wb side.
Next, as shown in fig. 3 (a), the semiconductor wafer 30A held by the wafer processing tape T1 is bonded to the film 10 of the dicing tape-integrated adhesive sheet X or the wafer fixing layer 12 thereof. Then, as shown in fig. 3 (b), the wafer processing tape T1 is peeled from the semiconductor wafer 30A.
Then, for example, laser marking is performed by irradiating laser light from the side of the base material 21 of the dicing tape 20 onto the laser marking layer 11 of the film 10 in the dicing tape-integrated adhesive sheet X (laser marking step). By this laser marking, various kinds of information such as character information and graphic information can be given to each semiconductor element which is later singulated into semiconductor chips. In this step, a laser is used In the marking process, the plurality of semiconductor elements within the semiconductor wafer 30A can be efficiently laser-marked together. Examples of the laser light used in the step include gas laser light and solid laser light. Examples of the gas laser include: carbon dioxide gas laser (CO) 2 Laser) and excimer laser. Examples of the solid-state laser include Nd: YAG laser.
When the pressure-sensitive adhesive layer 22 in the dicing tape-integrated pressure-sensitive adhesive sheet X is a radiation-curable pressure-sensitive adhesive layer, instead of the radiation irradiation described above in the process of manufacturing the dicing tape-integrated pressure-sensitive adhesive sheet X, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet rays from the side of the base 21 after the semiconductor wafer 30A is bonded to the film 10. The irradiation amount is, for example, 50 to 500mJ/cm 2 . The area (irradiation area R shown in fig. 1) of the dicing tape-integrated adhesive sheet X that can be irradiated as a measure of lowering the adhesive force of the adhesive layer 22 is, for example, an area other than the peripheral edge portion in the area where the film 10 is bonded in the adhesive layer 22.
Next, after the ring frame 41 is attached to the adhesive layer 22 in the dicing tape-integrated adhesive sheet X, as shown in fig. 4 (a), the dicing tape-integrated adhesive sheet X accompanied by the semiconductor wafer 30A is fixed to the holder 42 of the expanding device.
Next, the 1 st expansion step (cold expansion step) under relatively low temperature conditions is performed as shown in fig. 4 (b), and the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31, and the dicing film 10 with the integrated adhesive sheet X is cut into small pieces of film 10', thereby obtaining the semiconductor chips 31 with the film. In this step, the hollow cylindrical jack member 43 provided in the expanding apparatus is raised by abutting against the dicing tape 20 at the lower side of the dicing tape-integrated adhesive sheet X, and expands the dicing tape 20 to which the dicing tape-integrated adhesive sheet X of the semiconductor wafer 30A is bonded in a two-dimensional direction including the radial direction and the circumferential direction. The dicing tape 20 is stretched under a tensile stress of, for example, 1 to 100 MPa. The temperature conditions in this step are, for example, 0℃or lower, preferably-20 to-5℃and more preferably-15 to-5℃and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in this step is, for example, 1 to 500 mm/sec. The expansion amount (the distance by which the jack member 43 is lifted) in this step is, for example, 50 to 200mm. By such a cold expansion step, the film 10 with the integrated adhesive sheet X is cut into small pieces of film 10', and the semiconductor chip 31 with the film can be obtained. Specifically, in this step, cracks are formed in the fragile modified region 30A of the semiconductor wafer 30A, and singulation into semiconductor chips 31 occurs. At the same time, in the film 10 adhered to the adhesive layer 22 of the dicing tape 20 to be expanded in this step, the deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer 30A is adhered, and the tensile stress generated in the dicing tape 20 acts on the region opposed to the crack formation region of the wafer in a state where such deformation suppression does not occur. As a result, the portion of the thin film 10 facing the crack formation portion between the semiconductor chips 31 is cut. After this step, as shown in fig. 4 (c), the jack member 43 is lowered to release the expanded state in the dicing tape 20.
Next, the 2 nd expansion step under relatively high temperature conditions is performed as shown in fig. 5 (a), and the distance (separation distance) between the semiconductor chips 31 with thin films is increased. In this step, the hollow cylindrical jack member 43 of the device provided for expansion is again raised, and the dicing tape 20 of the dicing tape-integrated adhesive sheet X is expanded. The temperature condition in the 2 nd expansion step is, for example, 10℃or higher, preferably 15 to 30 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in the 2 nd expansion step is, for example, 0.1 to 10 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16mm. The separation distance of the semiconductor chips 31 with thin films is increased in the step to such an extent that the semiconductor chips 31 with thin films can be picked up appropriately from the dicing tape 20 by the pickup step described later. After this step, as shown in fig. 5 (b), the jack member 43 is lowered to release the expanded state in the dicing tape 20. In order to prevent the separation distance of the semiconductor chips 31 with the thin film on the dicing tape 20 from becoming narrower after the release of the expanded state, it is preferable that the portion outside the holding area of the semiconductor chips 31 in the dicing tape 20 is heated to be contracted before the release of the expanded state.
Next, if necessary, the semiconductor chip 31 side of the dicing tape 20 accompanied by the semiconductor chip 31 with a thin film is subjected to a cleaning step of cleaning the semiconductor chip 31 side with a cleaning liquid such as water, and then the semiconductor chip 31 with a thin film is picked up from the dicing tape 20 (pick-up step) as shown in fig. 6. For example, the pin members 44 of the pickup mechanism are lifted up on the lower side in the drawing of the dicing tape 20, and the semiconductor chip 31 with a film, which is the object of pickup, is lifted up via the dicing tape 20, and then sucked and held by the suction jig 45. In the pickup step, the lifting speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the lifting amount of the pin member 44 is, for example, 50 to 3000 μm.
Next, as shown in fig. 7, the semiconductor chip 31 with a thin film is flip-chip mounted with respect to the mounting substrate 51. The mounting board 51 includes, for example: lead frames, tape automated bonding (TAB: tape Automated Bonding) films, and wiring substrates. The semiconductor chip 31 is electrically connected to the mounting substrate 51 via the bump 52. Specifically, an electrode pad (not shown) provided on the circuit formation surface side of the semiconductor chip 31 is electrically connected to a terminal portion (not shown) provided on the mounting substrate 51 via the bump 52. The bump 52 is, for example, a solder bump. A thermosetting filler 53 is interposed between the semiconductor chip 31 and the mounting substrate 51. For example, flip-chip mounting of the semiconductor chip 31 with respect to the mounting substrate 51 may be achieved by subjecting the mounting substrate 51 to a so-called reflow process in a state of being accompanied by the semiconductor chip 31 with a thin film thereon.
In this way, a semiconductor device having the thin film 10' as a protective film provided on the back surface of the semiconductor chip 31 can be manufactured.
In this semiconductor device manufacturing method, instead of the above configuration in which the semiconductor wafer 30A is bonded to the dicing tape-integrated adhesive sheet X, the semiconductor wafer 30B manufactured as described below may be bonded to the dicing tape-integrated adhesive sheet X.
As shown in fig. 8 (a) and 8 (B), first, the semiconductor wafer W is formed with the dividing grooves 30B (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the 2 nd surface Wb side of the semiconductor wafer W, a dividing groove 30b having a predetermined depth is formed in the 1 st surface Wa side of the semiconductor wafer W by using a rotary cutter such as a dicing device in a state where the wafer processing tape T2 holds the semiconductor wafer W. The dividing grooves 30b are voids for separating the semiconductor wafer W into semiconductor chip units (in fig. 8 and 9, the dividing grooves 30b are schematically indicated by thick lines).
Next, as shown in fig. 8 (c), the following steps are performed: bonding the wafer processing tape T3 having the bonding surface T3a to the 1 st surface Wa side of the semiconductor wafer W; and peeling the wafer processing tape T2 from the semiconductor wafer W.
Next, as shown in fig. 8 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T3 (wafer thinning step). The grinding may be performed using a grinding device having a grinding stone. Through this wafer thinning process, in the present embodiment, the semiconductor wafer 30B that can be singulated into a plurality of semiconductor chips 31 can be formed. Specifically, the semiconductor wafer 30B has a portion (connection portion) to be connected to a portion to be singulated into a plurality of semiconductor chips 31 on the 2 nd surface Wb side. The thickness of the connection portion of the semiconductor wafer 30B, that is, the distance between the 2 nd surface Wb of the semiconductor wafer 30B and the 2 nd surface Wb side tip of the dividing groove 30B is, for example, 1 to 30 μm.
Fig. 9 a and 9B specifically show the 1 st expansion step (cold expansion step) performed after the semiconductor wafer 30B is bonded to the dicing tape-integrated adhesive sheet X. In this step, the hollow cylindrical jack member 43 provided in the expanding device is raised by abutting against the dicing tape 20 at the lower side in the drawing of the dicing tape-integrated adhesive sheet X, and expands the dicing tape 20 to which the dicing tape-integrated adhesive sheet X of the semiconductor wafer 30B is bonded in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30B. For this expansion, the dicing tape 20 is subjected to conditions such as a tensile stress of 15 to 32 MPa. The temperature conditions in the cold expansion step are, for example, 0℃or lower, preferably-20 to-5℃and more preferably-15 to-5℃and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in the cold expansion step is, for example, 0.1 to 100 mm/sec. The expansion amount in the cold expansion step is, for example, 3 to 16mm.
In this step, the semiconductor wafer 30B is cut at a thin and easily broken portion, and the semiconductor wafer is singulated into semiconductor chips 31. At the same time, in this step, deformation of each region of the film 10 in contact with each semiconductor chip 31 in the adhesive layer 22 of the dicing tape 20 to be expanded is suppressed, and tensile stress generated in the dicing tape 20 acts in a state where such deformation suppressing action is not generated at a portion facing the dividing grooves between the semiconductor chips 31. As a result, the portion of the film 10 facing the dividing grooves between the semiconductor chips 31 is cut. The semiconductor chip 31 with a thin film thus obtained is subjected to the pick-up step described above with reference to fig. 6, and then subjected to a mounting step in the semiconductor device manufacturing process.
In this method for manufacturing a semiconductor device, the wafer thinning process shown in fig. 10 may be performed instead of the wafer thinning process described above with reference to fig. 8 (d). After the above-described process is performed with reference to fig. 8 (C), in the wafer thinning process shown in fig. 10, the wafer W is thinned from the grinding process on the 2 nd surface Wb to a predetermined thickness in a state where the semiconductor wafer W is held on the wafer processing tape T3, whereby the semiconductor wafer divided body 30C including the plurality of semiconductor chips 31 and held on the wafer processing tape T3 can be formed. In this step, a method (method 1) of grinding the wafer until the dividing groove 30b itself is exposed on the side of the 2 nd surface Wb may be employed, or a method (method 2) of grinding the wafer until the wafer reaches the dividing groove 30b from the side of the 2 nd surface Wb, and then forming a semiconductor wafer divided body 30C by generating a crack between the dividing groove 30b and the 2 nd surface Wb by a pressing force from the rotary mill Dan Xiangjing wafer may be employed. Depending on the method employed, the depth of the dividing groove 30b from the 1 st plane Wa formed as described above can be appropriately determined with reference to fig. 8 (a) and 8 (b). In fig. 10, the split groove 30b passing through the method 1 or the split groove 30b passing through the method 2 and the crack connected thereto are schematically indicated by a thick line. The semiconductor wafer divided body 30C thus manufactured may be bonded to the dicing tape-integrated adhesive sheet X instead of the semiconductor wafer 30A, and then the above steps may be performed with reference to fig. 3 to 6.
Fig. 11 a and 11 b specifically show the 1 st expansion step (cold expansion step) performed after the semiconductor wafer separator 30C is bonded to the dicing tape-integrated adhesive sheet X. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 20 at the lower side in the drawing of the dicing tape-integrated adhesive sheet X, and the dicing tape 20 to which the dicing tape-integrated adhesive sheet X of the semiconductor wafer separator 30C is bonded is expanded so as to be stretched in the two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer separator 30C. The expansion is performed under conditions such that the dicing tape 20 generates a tensile stress of, for example, 1 to 100 MPa. The temperature conditions in this step are, for example, 0℃or lower, preferably-20 to-5℃and more preferably-15 to-5℃and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in this step is, for example, 1 to 500 mm/sec. The expansion amount in this step is, for example, 50 to 200mm. By such a cold expansion step, the film 10 with the integrated adhesive sheet X is cut into small pieces of film 10' to obtain the semiconductor chip 31 with the film. Specifically, in this step, in the film 10 that is in close contact with the adhesive layer 22 of the dicing tape 20 to be expanded, deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer separator 30C is in close contact, and on the other hand, tensile stress generated in the dicing tape 20 acts in a state where such deformation suppressing action is not generated in a region facing the dividing groove 30b between the semiconductor chips 31. As a result, the portion of the thin film 10 facing the dividing grooves 30b between the semiconductor chips 31 is cut. The semiconductor chip 31 with a thin film thus obtained is subjected to the pick-up step described above with reference to fig. 6, and then subjected to a mounting step in the semiconductor device manufacturing process.
For example, the film 10 (adhesive sheet as a back surface protective film) used in the dicing tape-integrated adhesive sheet X in the above-described semiconductor device manufacturing process has a breaking strength of 1.2N or less, preferably 1.1N or less, more preferably 1N or less in a tensile test performed under conditions of an initial chuck pitch of 16mm, -15 ℃ and a load increase rate of 1.2N/min on a film test piece (adhesive sheet test piece) having a width of 2mm as described above. Such a configuration is preferable in terms of suppressing the breaking force to be applied to the thin film 10 in order to break the thin film 10 on the dicing tape 20, for example, in the case where the dicing tape-integrated adhesive sheet X is used to perform the dicing expansion step (the 1 st expansion step) in the manufacturing process of the semiconductor device as described above, for example, to obtain the semiconductor chip 31 with the thin film.
As described above, the elongation at break in the tensile test performed under conditions of an initial chuck pitch of 16mm, -15 ℃ and a load increase rate of 1.2N/min for the film 10 (adhesive sheet as the back surface protective film) in the dicing tape-integrated adhesive sheet X was 1.2% or less, preferably 1.1% or less, more preferably 1% or less for the film test piece (adhesive sheet test piece) having a width of 2 mm. Such a configuration is preferable in terms of suppressing the stretching length required for cutting the film 10 on the dicing tape 20, for example, in the case where the dicing-tape-integrated adhesive sheet X is used to perform the dicing expansion step (the 1 st expansion step) in the manufacturing process of the semiconductor device described above, for example, to obtain the semiconductor chip 31 with the film.
As described above, the dicing tape-integrated adhesive sheet X is suitable for suppressing the breaking force to be applied to the film 10 in order to break the film 10 on the dicing tape 20, and is suitable for suppressing the stretching length of the film 10 for the breaking. When such a dicing tape-integrated adhesive sheet X is used in the dicing and expanding process, it is preferable to achieve good dicing of the film 10.
The film 10 in the dicing tape-integrated adhesive sheet X has a laminated structure including the laser marking layer 11 (layer 1) and the wafer fixing layer 12 (layer 2) thereon, which are releasably adhered to the adhesive layer 22 of the dicing tape 20, as described above. With this configuration, the characteristics required for the adhesive layer side surface of the dicing tape and the characteristics required for the work attachment surface opposite to the surface of the film 10 are preferably individually exhibited. The ratio of the thickness of the laser marking layer 11 to the thickness of the wafer fixing layer 12 is preferably 0.2 to 4, more preferably 0.2 to 1.5, still more preferably 0.3 to 1.3, and still more preferably 0.6 to 1.1 as described above. With this structure, it is preferable to achieve both the functions required for the laser marking layer 11 (layer 1) and the wafer fixing layer 12 (layer 2) in the thin film 10.
The dicing tape-integrated adhesive sheet X of the present embodiment is a dicing tape-integrated back surface protective film, and as described above, the laser marking layer 11 has thermosetting properties and the wafer fixing layer 12 exhibits thermoplastic properties. The laser marking layer 11 having such a constitution that it is thermosetting is suitable for ensuring the visibility of the engraved information in the case where the surface of the laser marking layer 11 of the film 10 is subjected to a high temperature process such as a so-called reflow process after being engraved by laser marking. The laser marking layer 11 has a thermosetting property and the wafer fixing layer 12 has a thermoplastic property, and is suitable for achieving good dicing of the film 10 in the dicing expansion step. That is, the above-described constitution in which the laser marking layer 11 in the film 10 has thermosetting property and the wafer fixing layer 12 exhibits thermoplastic property is preferable in terms of both securing the visibility of the imprint information and realizing good severance in the film 10.
As described above, the thickness of the film 10 is preferably 8 μm or more, more preferably 10 μm or more, and preferably 20 μm or less, more preferably 15 μm or less, with respect to the dicing tape-integrated adhesive sheet X. With this configuration, it is preferable to achieve the above-described good severance in the film 10.
Examples
[ example 1 ]
Production of back protective film
In the production of the back surface protective film in the dicing tape-integrated adhesive sheet, first, a 1 st resin film forming a laser marking layer (LM layer) and a 2 nd resin film forming a wafer fixing layer (WM layer) are produced separately.
In the production of the 1 st resin film, first, the acrylic resin A is prepared 1 (trade name "Teisan Resin SG-P3", weight average molecular weight 85 ten thousand, glass transition temperature Tg 12 ℃, manufactured by Nagase ChemteX Corporation) 100 parts by mass of epoxy Resin B 1 (trade name "KI-3000-4", manufactured by Nippon Kagaku Co., ltd.) 51.5 parts by mass of epoxy resin B 2 (trade name "JER YL980", mitsubishi chemical Co., ltd.) 22 parts by mass, phenol resin C 1 (trade name "MEH7851-SS", manufactured by Ming He Chemicals Co., ltd.) 76.5 parts by mass, filler (trade name "SO-25R", silica, average particle diameter 0.5 μm, manufactured by Admatechs Company) 187.5 parts by mass, BLACK dye (trade name "OIL BLACK BS", orient Chemical Industries Co., manufactured by Ltd.) 15 parts by mass, and heat curing catalyst Z 1 (trade name "CUREZOL 2PZ", manufactured by Kyowa Kabushiki Kaisha Co., ltd.) 22 parts by mass was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content of 36% by mass. Next, the resin composition was applied to a silicone release treated surface of a PET release film (thickness 50 μm) having a surface subjected to silicone release treatment using a coater, and a resin composition layer was formed. Next, the composition layer was heated at 130 ℃ for 2 minutes and dried and thermally cured to prepare a 1 st resin film (film to be formed into a laser marking layer) having a thickness of 8 μm on the PET separator film.
In the production of the 2 nd resin film, first, the acrylic resin A is prepared 1 (trade name "Teisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass of epoxy Resin B 3 (trade name "EPPN-501HY", manufactured by Japanese chemical Co., ltd.) 65.5 parts by mass of phenolic resin C 2 (trade name "MEH7851-H", manufactured by Ming He Chemicals Co., ltd.) 84.5 parts by mass, filler (trade name "SO-25R", silica, average particle diameter of 0.5 μm, manufactured by Admatechs Company) 177 parts by mass, and BLACK dye (trade name "OIL BLACK BS", orient Chemical Industries Co., manufactured by Ltd.) 15 parts by massThe mixture was mixed with methyl ethyl ketone to obtain a resin composition having a solid content of 36% by mass. Next, the resin composition was applied to a silicone release treated surface of a PET release film (thickness 50 μm) having a surface subjected to silicone release treatment using a coater, and a resin composition layer was formed. Subsequently, the composition layer was heated at 130℃for 2 minutes and dried to prepare a 2 nd resin film (film to be formed into a wafer fixing layer) in an uncured state having a thickness of 7 μm on the PET separator.
The 1 st resin film on the PET separator and the 2 nd resin film on the PET separator manufactured as described above were laminated using a laminator. Specifically, the exposed surfaces of the 1 st and 2 nd resin films were bonded to each other at a temperature of 100℃and a pressure of 0.85 MPa. The back surface protective film of example 1 was thus produced. The compositions of the laser marking layer (LM layer) and the wafer fixing layer (WM layer) in example 1 and each of the examples and comparative examples described later are shown in tables 1 and 2 (the units of the numerical values indicating the compositions of the layers in tables 1 and 2 are relative "parts by mass" in the layer).
Manufacturing of cutting tape
In a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer and a stirring device, a mixture comprising 100 parts by mass of 2-ethylhexyl acrylate, 19 parts by mass of 2-hydroxyethyl acrylate, 0.4 part by mass of benzoyl peroxide as a polymerization initiator, and 80 parts by mass of toluene as a polymerization solvent was stirred at 60℃under a nitrogen atmosphere for 10 hours (polymerization). Thus, an acrylic polymer P was obtained 1 Is a polymer solution of (a). Next, the acrylic polymer P is contained 1 The mixture of the polymer solution of (2) methacryloxyethyl isocyanate (MOI) and dibutyltin dilaurate as the catalyst for the addition reaction was stirred at 50℃under an air atmosphere for 60 hours (addition reaction). In the reaction solution, the acrylic polymer P is used as a catalyst 1 100 parts by mass, and the MOI amount was 12 parts by mass relative to the acrylic polymer P 1 The blending amount of dibutyltin dilaurate was 0.1 part by mass based on 100 parts by mass. The addition reaction gives a polymer containing a polymer having a first group in a side chainAcrylic polymers P based on acrylic acid esters 2 Is a polymer solution of (a). Next, in the polymer solution, the polymer solution is prepared with respect to the acrylic polymer P 2 100 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by TOSOH CORPORATION), 2 parts by mass of a photopolymerization initiator (trade name "IRGACURE 369", manufactured by BASF corporation) and toluene were added and mixed to obtain an adhesive composition having a solid content of 28% by mass. Next, an adhesive composition was applied to the silicone release treated surface of the PET release film (thickness 50 μm) having the silicone release treated surface using a coater, and an adhesive composition layer was formed. Subsequently, the composition layer was dried by heating at 120℃for 2 minutes, and an adhesive layer having a thickness of 5 μm was formed on the PET separator. Then, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "NRW#125", thickness 125 μm, manufactured by GUNZE LIMITED) was bonded to the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. Then, the bonded body was stored at 23℃for 72 hours. Thus, a dicing tape was produced.
Manufacturing of cutting tape integrated back protective film
The back protective film of example 1 with PET release film was die cut into a circular shape with a diameter of 330 mm. The above-mentioned dicing tape accompanied by PET separator was die-cut into a circular shape of 370mm in diameter. Then, the PET separator on the laser marking layer side was peeled off from the back protective film, and the PET separator was peeled off from the dicing tape, and then the laser marking layer side exposed in the back protective film and the adhesive layer side exposed in the dicing tape were bonded using a laminator. In the bonding, the bonding speed was set to 10 mm/min, the temperature condition was set to 40℃and the pressure condition was set to 0.15MPa. The dicing tape is bonded while being aligned so that the center of the dicing tape coincides with the center of the back surface protective film. Thus, a dicing tape-integrated back surface protective film of example 1 having a laminated structure including a dicing tape and a back surface protective film was produced.
[ example 2 ]
After the 2 nd resin film (to be formedResin film of wafer fixing layer), an acrylic resin a is used 2 (trade name "Teisan Resin SG-N50", weight average molecular weight 45 ten thousand, glass transition temperature Tg 0 ℃, manufactured by Nagase ChemteX Corporation) 100 parts by mass instead of acrylic Resin A 1 100 parts by mass; a dicing tape-integrated back surface protective film of example 2 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the content of the filler (trade name "SO-25R", manufactured by Admatechs Company) was 217 parts by mass instead of 177 parts by mass.
[ example 3 ]
In the production of the 2 nd resin film (the resin film on which the wafer fixing layer is to be formed), the acrylic resin A is used 2 100 parts by mass of (trade name "Teisan Resin SG-N50", manufactured by Nagase ChemteX Corporation) in place of the acrylic Resin A 1 100 parts by mass; a dicing tape-integrated back surface protective film of example 3 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the content of the filler (trade name "SO-25R", manufactured by Admatechs Company) was 265 parts by mass instead of 177 parts by mass.
[ example 4 ]
In the production of the 2 nd resin film (the resin film on which the wafer fixing layer is to be formed), the acrylic resin A is used 3 (trade name "Teisan Resin SG-708-6", weight average molecular weight 70 ten thousand, glass transition temperature Tg 4 ℃ C., manufactured by Nagase ChemteX Corporation) 100 parts by mass instead of acrylic Resin A 1 100 parts by mass; a dicing tape-integrated back surface protective film of example 4 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the content of the filler (trade name "SO-25R", manufactured by Admatechs Company) was 265 parts by mass instead of 177 parts by mass.
[ example 5 ]
In the production of the 2 nd resin film (the resin film on which the wafer fixing layer is to be formed), the acrylic resin A is used 4 (trade name "Teisan Resin SG-70L", manufactured by Nagase ChemteX Corporation) 100 parts by mass instead of the acrylic Resin A 1 A dicing tape-integrated back surface protective film of example 5 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except for 100 parts by mass.
[ example 6 ]
A dicing tape-integrated back surface protective film of example 6 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the thickness of the laser marking layer was set to 20 μm from 8 μm and the thickness of the wafer fixing layer was set to 5 μm from 7 μm at the time of producing the back surface protective film.
Example 7
A dicing tape-integrated back surface protective film of example 7 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the thickness of the laser marking layer was set to 5 μm from 8 μm and the thickness of the wafer fixing layer was set to 5 μm from 7 μm at the time of producing the back surface protective film.
Example 8
A dicing tape-integrated back surface protective film of example 8 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the thickness of the laser marking layer was set to 10 μm from 8 μm and the thickness of the wafer fixing layer was set to 15 μm from 7 μm at the time of producing the back surface protective film.
Comparative example 1
Acrylic resin A 1 (trade name "Teisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass of epoxy Resin B 3 (trade name "EPPN-501HY", manufactured by Japanese chemical Co., ltd.) 70 parts by mass of a phenol resin C 2 80 parts by mass of (trade name "MEH7851-SS", manufactured by Ming Hei Chemicals Co., ltd.), 175 parts by mass of a filler (trade name "SO-25R", manufactured by Admatechs Company), and 15 parts by mass of a BLACK dye (trade name "OIL BLACK BS", orient Chemical Industries Co., ltd.) were added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content of 30% by mass. Next, the resin composition was applied to a silicone release treated surface of a PET release film (thickness 50 μm) having a surface subjected to silicone release treatment using a coater, and a resin composition layer was formed. Next, at 13 The composition layer was heated at 0℃for 2 minutes and dried to prepare a back protective film having a thickness of 25. Mu.m, on a PET separator. Then, a dicing tape-integrated back surface protective film of comparative example 1 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the back surface protective film of comparative example 1 was used instead of the back surface protective film of example 1.
Comparative example 2
Acrylic resin A 1 (trade name "Teisan Resin SG-P3", manufactured by Nagase ChemteX Corporation) 100 parts by mass of epoxy Resin B 1 (trade name "KI-3000-4", manufactured by Nippon Kagaku Co., ltd.) 50 parts by mass of epoxy resin B 2 (trade name "JER YL980", mitsubishi chemical Co., ltd.) 20 parts by mass, phenol resin C 1 (trade name "MEH7851-SS", manufactured by Ming Hei Chemicals Co., ltd.) 75 parts by mass, filler (trade name "SO-25R", manufactured by Admatechs Company) 175 parts by mass, and BLACK dye (trade name "OIL BLACK BS", orient Chemical Industries Co., manufactured by Ltd.) 15 parts by mass were added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content of 30% by mass. Next, the resin composition was applied to a silicone release treated surface of a PET release film (thickness 50 μm) having a surface subjected to silicone release treatment using a coater, and a resin composition layer was formed. Then, the composition layer was heated at 130℃for 2 minutes and dried to prepare a back protective film having a thickness of 25. Mu.m, on a PET separator. Then, a dicing tape-integrated back surface protective film of comparative example 2 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the back surface protective film of comparative example 2 was used instead of the back surface protective film of example 1.
[ comparative example 3 ]
A dicing tape-integrated back surface protective film of comparative example 3 was produced in the same manner as the dicing tape-integrated back surface protective film of example 1 except that the thickness of the wafer fixing layer was set to 17 μm from 7 μm at the time of producing the back surface protective film.
Breaking strength and breaking elongation of back protective film
For each of the film test pieces (width 2mm×length 20 mm) cut out from the above back protective films of examples 1 to 8 and comparative examples 1 to 3, the breaking strength (N) and the breaking elongation (%) in the tensile test using a TMA tester (trade name "TMA Q400", TA INSTRUMENT co., ltd.) were measured. After the film test piece for measurement was held at-15℃for 5 minutes, the operation mode of the machine was set to a tensile mode, and the tensile test was performed under conditions of an initial chuck spacing of 16mm, -15℃and a load increase rate of 1.2N/min. When the upper load limit of the TMA tester used was not broken at 1.2N, the breaking strength was evaluated as "exceeding 1.2", and the elongation at break was evaluated as exceeding the elongation (%) at 1.2N. These results are shown in tables 1 and 2.
Cutting-off of back protective film
The following bonding step, the 1 st expansion step (cold expansion step) for dicing, and the 2 nd expansion step (normal temperature expansion step) for separating were performed using the dicing tape-integrated back surface protective films of examples 1 to 8 and comparative examples 1 to 3.
In the bonding step, the semiconductor wafer separator held by the wafer processing tape (trade name "UB-3083D", manufactured by ridong electric company, ltd.) is bonded to the rear surface protective film of the dicing tape-integrated rear surface protective film, and then the wafer processing tape is peeled from the semiconductor wafer separator. For bonding, a laminator was used, the temperature condition was set to 80℃and the pressure condition was set to 0.15MPa. The semiconductor wafer divided body is prepared by forming as follows. First, a bare wafer (diameter: 12 inches, thickness: 780 μm, manufactured by tokyo chemical Co., ltd.) held together with a ring frame in a wafer processing tape (trade name: V12S-R2-P, manufactured by Nito electric Co., ltd.) was cut into individual divided grooves (a lattice shape having a width of 25 μm, a depth of 330 μm, and a division of 0.8mm×0.8 mm) by a cutting device (trade name: DFD6260, manufactured by Disco Corporation) from one side surface thereof by a rotary cutter. Then, after the dicing sheet was formed and the wafer processing tape (trade name "UB-3083D", manufactured by niton corporation) was bonded to the surface, the wafer processing tape (trade name "V12S-R2-P") was peeled off from the wafer. Then, the wafer was thinned to a thickness of 300 μm by grinding from the other side surface (surface where the separation grooves were not formed) of the wafer using a back grinding apparatus (manufactured by trade name "DGP8760", disco Corporation). Thus, a semiconductor wafer separator (held in a wafer processing tape) is formed. The semiconductor wafer divided body includes a plurality of semiconductor chips (0.8 mm×0.8 mm).
The cold expansion step was performed in the cold expansion unit using a mold separation device (trade name "Die Separator DDS2300", disco Corporation). Specifically, first, a ring frame made of SUS (manufactured by Disco Corporation) having a diameter of 12 inches was attached to the dicing tape adhesive layer in the dicing tape-integrated back surface protective film accompanied by the semiconductor wafer separator at room temperature. Then, the dicing tape-integrated back surface protective film is mounted in the apparatus, and the dicing tape of the dicing tape-integrated back surface protective film accompanied by the semiconductor wafer divided bodies is expanded in a cold expansion unit of the same apparatus. In the cold expansion step, the temperature was-15℃and the expansion rate (jack-up rate) was 100 mm/sec, and the expansion amount (jack-up amount) was 15mm.
The room temperature expansion step was performed in the room temperature expansion unit using a mold separation device (trade name "Die Separator DDS2300", manufactured by Disco Corporation). Specifically, the dicing tape of the dicing tape-integrated back surface protective film with the semiconductor wafer separator subjected to the cold expansion step is expanded in the room temperature expansion unit of the same apparatus. In this room temperature expansion step, the temperature was 23 ℃, the expansion rate was 1 mm/sec, and the expansion amount was 15mm. Then, the peripheral edge portion of the dicing tape-integrated back surface protective film having undergone normal temperature expansion, which is located outside the work attaching area, is subjected to heat shrinkage treatment. In this treatment, the heating temperature was 200 ℃.
After the above process using the dicing tape-integrated back surface protective film, the back surface protective film was evaluated as excellent (excellent), the back surface protective film was evaluated as having 90% or more and less than 100% of the line to be cut, and the back surface protective film was evaluated as poor (x). The evaluation results are shown in tables 1 and 2.
[ evaluation ]
According to the back surface protective films of examples 1 to 8, good dicing can be achieved in the dicing step using the dicing tape-integrated back surface protective film to obtain the semiconductor chip with the back surface protective film.
TABLE 1
TABLE 2
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Claims (7)

1. A dicing tape-integrated adhesive sheet comprising:
a dicing tape having a laminated structure including a base material and an adhesive layer; a kind of electronic device with high-pressure air-conditioning system
An adhesive sheet that is releasably adhered to the adhesive layer of the dicing tape,
the adhesive sheet has a breaking strength of 1.2N or less and an elongation at break of 1.2% or less in a tensile test performed on an adhesive sheet test piece having a width of 2mm under conditions of an initial chuck spacing of 16mm, -15 ℃ and a load increase rate of 1.2N/min.
2. The dicing tape-integrated adhesive sheet according to claim 1, wherein the adhesive sheet has a laminated structure including a 1 st layer in close contact with the adhesive layer of the dicing tape and a 2 nd layer on the 1 st layer.
3. The dicing tape-integrated adhesive sheet according to claim 2, wherein a ratio of the thickness of the 1 st layer to the thickness of the 2 nd layer is 0.2 to 4.
4. The dicing tape-integrated adhesive sheet according to any one of claims 1 to 3, wherein the adhesive sheet is a back surface protective film.
5. The dicing tape-integrated adhesive sheet according to claim 2 or 3, wherein the adhesive sheet is a back surface protective film, and the 1 st layer has thermosetting property.
6. The dicing tape-integrated adhesive sheet according to claim 5, wherein the layer 2 shows thermoplasticity.
7. The dicing tape-integrated adhesive sheet according to claim 2 or 3, wherein the adhesive sheet is a back surface protective film, and the layer 2 shows thermoplasticity.
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