JP2018195746A - Dicing die bonding film - Google Patents

Abstract

To provide a dicing die bonding film in which lifting hardly occurs between a die bonding film and an adhesive layer during normal temperature expansion and thereafter, while the dicing die bonding film is excellent in pickup aptitude and die bonding aptitude for a die bonding film.SOLUTION: A dicing die bonding film includes a dicing tape including a substrate and an adhesive layer laminated on the substrate, and a die bonding film laminated on the adhesive layer in the dicing tape. The die bonding film has a storage modulus E' at 25°C of 3-5 GPa, the storage modulus being measured in a condition of frequency 10 Hz.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing die bond film. More specifically, the present invention relates to a dicing die bond film that can be used in the process of manufacturing a semiconductor device.

  Conventionally, dicing tapes and dicing die bond films are sometimes used in the manufacture of semiconductor devices. The dicing tape has a form in which an adhesive layer is provided on a base material, and a semiconductor wafer is arranged on the adhesive layer so that individual semiconductor chips are not scattered when the semiconductor wafer is diced (cut). (For example, refer to Patent Document 1).

  A dicing die-bonding film is provided so that a die-bonding film can be peeled off on an adhesive layer of a dicing tape. In manufacturing a semiconductor device, a semiconductor wafer is held on a die bond film of a dicing die bond film, and the semiconductor wafer is diced into individual semiconductor chips. Thereafter, for example, through a cleaning process, the semiconductor chip is picked up from the dicing tape together with the die bond film and peeled off, and the semiconductor chip is temporarily fixed (die bonded) to an adherend such as a lead frame through the die bond film. For this reason, it is important that the die-bonding film in the dicing die-bonding film is excellent in peelability (pickup suitability) from the dicing tape at the time of pick-up and adhesiveness to the adherend (die bond suitability) in die bonding.

  When using a dicing die bond film in which a die bond film is laminated on a dicing tape and dicing a semiconductor wafer while holding the die bond film, it is necessary to cut the die bond film simultaneously with the semiconductor wafer. However, in a general dicing method using a diamond blade, adhesion between the die bond film and the dicing tape due to the influence of heat generated during dicing, adhesion of semiconductor chips due to generation of cutting debris, cutting debris on the side of the semiconductor chip Therefore, it is necessary to slow down the cutting speed, which increases the cost.

  Therefore, in recent years, a method for obtaining individual semiconductor chips by forming grooves on the surface of a semiconductor wafer and then performing back surface grinding (sometimes referred to as “DBG (Dicing Before Grinding)”) (for example, Patent Document 2). Or by forming a modified region by irradiating a laser beam to the planned division line of the semiconductor wafer, and then making the semiconductor wafer easily divisible by the planned division line. After pasting, the dicing tape is expanded at a low temperature (for example, −25 to 0 ° C.) (hereinafter sometimes referred to as “cool expand”), thereby cleaving (breaking) both the semiconductor wafer and the die bond film. Let each individual semiconductor chip (semiconductor chip with die bond film) Has been proposed (see, for example, Patent Document 3). This is a so-called stealth dicing (registered trademark) method. Also in DBG, the obtained individual semiconductor chips are attached to a dicing die bond film, and then the die bonding film is cleaved into a size corresponding to the individual semiconductor chip by cool expanding the dicing tape to obtain individual die bonds. A method of obtaining a semiconductor chip with a film is also known. Thus, when the die bond film is cleaved by the cool expand, it is important that the die bond film in the dicing die bond film is excellent in the cleaving property at the time of the cool expand.

JP 2011-216563 A JP 2003-007649 A JP 2009-164556 A

  In DBG, stealth dicing, etc., after cleaving the die bond film, the dicing die bond film is expanded near room temperature (hereinafter sometimes referred to as “room temperature expand”), and the interval between adjacent semiconductor chips with die bond film And then fixing the semiconductor chip with the gap between the semiconductor chips widened by subjecting the outer periphery of the semiconductor chip to thermal contraction (hereinafter sometimes referred to as “heat shrink”). The chip can be easily picked up.

  In recent years, circuit layers and silicon layers are becoming thinner due to the need for higher capacity semiconductors. However, the increase in the thickness (total thickness) of the circuit layer due to the increase in the number of circuit layers tends to increase the proportion of the resin contained in the circuit layer. The difference in coefficient of linear expansion from the layered silicon layer becomes significant, and the semiconductor chip is likely to warp. For this reason, in particular, a semiconductor chip obtained by dicing and having a multilayered circuit layer with a die bond film is formed at the interface between the pressure-sensitive adhesive layer of the dicing tape and the die bond film at room temperature expansion and thereafter (for example, until pickup) Floating (peeling) was likely to occur.

  The present invention has been made in view of the above problems, and its purpose is to improve the pick-up property and die bondability of the die bond film, while floating between the die bond film and the pressure-sensitive adhesive layer at room temperature expansion and thereafter. It is to provide a dicing die-bonding film that hardly occurs.

  As a result of intensive studies to achieve the above object, the present inventors have found that when a dicing tape whose storage elastic modulus E ′ at 25 ° C. of the die bond film is within a specific range is used, a semiconductor chip having a multilayered circuit layer It was found that, even when using, the die bond film was excellent in pick-up property and die bond property, but it was difficult to float during and after expansion at room temperature. The present invention has been completed based on these findings.

  That is, the present invention includes a base material, a dicing tape having a pressure-sensitive adhesive layer laminated on the base material, and a die bond film laminated on the pressure-sensitive adhesive layer in the dicing tape, Provided is a dicing die-bonding film having a storage elastic modulus E ′ of 3 to 5 GPa at 25 ° C. measured at a frequency of 10 Hz.

  The dicing die-bonding film of the present invention has a storage elastic modulus E ′ at 25 ° C. measured at a frequency of 10 Hz of the die-bonding film of 3 GPa or higher, which is relatively higher than the storage elastic modulus of the conventional die-bonding film. When stress is applied in a relatively slow speed region at room temperature, the die bond film is difficult to move in the vertical direction (thickness direction), and semiconductors with multi-layered circuit layers as well as non-multilayered semiconductor chips Even when a chip is used, it is possible to make it difficult for the die bond film to float from the dicing tape during normal temperature expansion and thereafter (for example, until a pickup is performed including a cleaning step). Nevertheless, when the separated die-bonding film is intentionally picked up from the dicing tape and peeled off, stress is applied in a relatively high speed region, so that it can be picked up easily. In addition, by controlling the storage elastic modulus E ′ at 25 ° C. measured at a frequency of 10 Hz of the die bond film to 5 GPa or less, the die bond film has excellent wettability with respect to the adherend during die bonding, thereby making the die bond suitable. It is excellent and can be performed satisfactorily when the semiconductor chip is die-bonded (temporarily fixed) to the adherend. Thus, when the dicing die-bonding film of the present invention is used, when the stress is applied in a relatively slow speed region because the storage elastic modulus E ′ at 25 ° C. measured at a frequency of 10 Hz is 3 GPa or more. It is possible to satisfy both of the characteristic that it is difficult to cause floating and the characteristic that it is easy to pick up easily in a pickup that is stressed in a relatively high speed region.

  Moreover, in the dicing die-bonding film of the present invention, it is preferable that the storage modulus E ′ at −15 ° C. measured at a frequency of 10 Hz of the die-bonding film is 4 to 7 GPa. By setting the storage elastic modulus E ′ at −15 ° C. measured at a frequency of 10 Hz of the die bond film within a range of 4 to 7 GPa, which is relatively higher than the storage elastic modulus of the conventional die bond film. When stress is applied, the die bond film is difficult to move in the vertical direction (thickness direction), so it is cool even when using a semiconductor chip with a multilayered circuit layer as well as a semiconductor chip with a multilayered circuit layer. It is possible to make it difficult for the die bond film to float from the dicing tape at the time of expansion and thereafter (for example, until the temperature is returned to room temperature). Further, the die bond film can be easily cleaved by the cool expand. For this reason, when using a dicing die bond film having such a structure, even when a semiconductor chip having a multilayered circuit layer is used, the die bond film has excellent cleaving property during pick-up, pickup suitability, and die bond suitability. Floating is unlikely to occur during cool expansion, normal temperature expansion, and thereafter.

  Moreover, the die-bonding film in the dicing die-bonding film of the present invention has a storage elastic modulus E ′ of 20 to 200 MPa at 150 ° C. measured at a frequency of 10 Hz after thermosetting, and is measured at a frequency of 10 Hz. It is preferable to exhibit a storage elastic modulus E ′ of 20 to 200 MPa at 250 ° C. When a semiconductor chip is die-bonded to an adherend via a die-bonding film, and then a wire bonding process described later is performed, the die-bonding film rises to about 150 ° C. due to heat generated by heating during wire bonding in the wire bonding process. Although the above-mentioned die-bonding film may be heated, the die-bonding film after thermosetting is moderately hard by showing a storage elastic modulus E ′ of 20 to 200 MPa at 150 ° C. measured at a frequency of 10 Hz after the thermosetting. Even when the temperature is raised to about 150 ° C. in the wire bonding step, the semiconductor chip is difficult to move due to the impact of the wire bonding, and the force is easily transmitted to the wire bonding pad, so that the wire can be appropriately bonded. In addition, as a reliability evaluation of semiconductor-related parts, a moisture-resistant solder reflow test in which the semiconductor-related parts are heated to about 250 ° C. is generally performed, and the die bond film is measured under conditions of a frequency of 10 Hz after thermosetting. By exhibiting a storage elastic modulus E ′ of 20 to 200 MPa at ° C., it is possible to make it difficult for the die bond film to peel from the adherend even when heated to about 250 ° C. in a moisture-resistant solder reflow test. That is, when the two storage elastic moduli E ′ after the thermosetting of the die bond film are each within the above range, the adhesion stability after the semiconductor chip is fixed is excellent.

  Moreover, in the dicing die-bonding film of the present invention, the storage elastic modulus G ′ at 130 ° C. measured at a frequency of 1 Hz of the die-bonding film is preferably 0.03 to 0.7 MPa. Thereby, it is possible to make it more difficult for the chips to float during die bonding. And since it becomes easy to control the storage elastic modulus E ′ at 25 ° C. within the above-mentioned range, the die bondability to the adherend is further improved while preventing the float from occurring at the time of cool expansion, normal temperature expansion and thereafter. There is a tendency that when the semiconductor chip is die-bonded to the adherend, it can be performed satisfactorily.

  In the dicing die-bonding film of the present invention, it is preferable that the loss elastic modulus G ″ at 130 ° C. measured at a frequency of 1 Hz of the die-bonding film is 0.01 to 0.1 MPa. As a result, chip floating during die bonding can be made more difficult to occur.

  The dicing die-bonding film of the present invention is excellent in pick-up property and die-bonding property of the die-bonding film, but hardly floats between the die-bonding film and the pressure-sensitive adhesive layer at the time of normal temperature expansion and thereafter. In particular, even when a semiconductor chip having a multi-layered circuit layer is used, floating does not easily occur.

It is a cross-sectional schematic diagram which shows one Embodiment of the dicing die-bonding film of this invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 represents a part of steps in a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented. The one part process in the modification of the manufacturing method of the semiconductor device using the dicing die-bonding film of this invention is represented.

[Dicing die bond film]
The dicing die-bonding film of this invention has a dicing tape which has a base material, the adhesive layer laminated | stacked on the said base material, and the die-bonding film laminated | stacked on the said adhesive layer of the said dicing tape. One embodiment of the dicing die-bonding film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of a dicing die-bonding film of the present invention.

  As shown in FIG. 1, a dicing die bond film 1 includes a dicing tape 10 and a die bond film 20 laminated on an adhesive layer 12 in the dicing tape 10 to obtain a semiconductor chip with a die bond film in manufacturing a semiconductor device. It can be used for the expanding process in the process. The dicing die bond film 1 has, for example, a disk shape having a size corresponding to a semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The dicing tape 10 in the dicing die bond film 1 has a laminated structure including a base material 11 and an adhesive layer 12.

(Base material)
The substrate 11 in the dicing tape 10 is an element that functions as a support in the dicing tape 10 and the dicing die bond film 1. Examples of the substrate 11 include a plastic substrate (particularly a plastic film). The base material 11 may be a single layer or a laminate of the same or different kinds of base materials.

  Examples of the resin constituting the plastic substrate include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolypropylene. , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resin such as butene copolymer and ethylene-hexene copolymer; Polyurethane; Polyester such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); Polycarbonate; Polyimide; Polyetheretherketone; polyetherimides; aramid, polyamide such as wholly aromatic polyamide; polyphenyl sulfide; fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, and the like. As for the said resin, only 1 type may be used and 2 or more types may be used. When the pressure-sensitive adhesive layer 12 is a radiation curable type as described later, the substrate 11 preferably has radiation transparency.

  When the substrate 11 is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film can be thermally shrunk in at least one direction. If it has heat shrinkability, it becomes possible to heat shrink the outer peripheral part of the semiconductor wafer of the dicing tape 1, thereby fixing the semiconductor chips with the die-bonded film separated in an expanded state. Therefore, the semiconductor chip can be easily picked up. In order for the base material 11 and the dicing tape 1 to have isotropic heat shrinkability, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching an unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material 11 and the dicing tape 1 preferably have a heat shrinkage rate of 1 to 30%, more preferably 2 to 25% in a heat treatment test performed under conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. More preferably, it is 3 to 20%, particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction of the MD direction and the TD direction.

  For example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment is performed on the surface of the base material 11 on the side of the pressure sensitive adhesive layer 12 in order to improve adhesion and retention with the pressure sensitive adhesive layer 12. , Physical treatment such as high-piezoelectric exposure treatment, ionizing radiation treatment, etc .; chemical treatment such as chromic acid treatment; surface treatment such as easy adhesion treatment with a coating agent (primer) may be applied. Moreover, in order to provide antistatic ability, you may provide the electroconductive vapor deposition layer containing a metal, an alloy, these oxides, etc. on the base material 11 surface.

  The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably from the viewpoint of securing strength for the base material 11 to function as a support in the dicing tape 10 and the dicing die bond film 1. Is 55 μm or more, particularly preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 and the dicing die bond film 1, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 150 μm or less. .

(Adhesive layer)
The pressure-sensitive adhesive layer 12 is formed from a pressure-sensitive adhesive. The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive (pressure-sensitive adhesive that can intentionally reduce the pressure-sensitive adhesive force by an external action such as irradiation or heating). The adhesive may be an adhesive (adhesive strength non-reducing adhesive) with little or no reduction in adhesive force depending on the action from the outside, and the individual pieces of the semiconductor wafer that are separated into pieces using the dicing die bond film 1 It can be appropriately selected according to the method and conditions of the conversion.

  In the case where a pressure-reducing adhesive is used as the adhesive, the adhesive layer 12 exhibits a relatively high adhesive force and a relatively low adhesive force in the manufacturing process and the use process of the dicing die bond film 1. And can be used properly. For example, when the die bond film 20 is bonded to the adhesive layer 12 of the dicing tape 10 in the manufacturing process of the dicing die bond film 1 or when the dicing die bond film 1 is used in the dicing process, the adhesive layer 12 is relatively high. While it is possible to suppress / prevent floating of the adherend such as the die bond film 20 from the pressure-sensitive adhesive layer 12 using the state showing the adhesive strength, the dicing tape 10 of the dicing die bond film 1 is then changed from the dicing tape 10 to the die bond film. In the pick-up process for picking up the attached semiconductor chip, the pick-up can be easily performed by reducing the adhesive strength of the pressure-sensitive adhesive layer 12.

  Examples of such adhesive pressure-reducing adhesives include radiation curable adhesives (radiation curable adhesives), heat-foaming adhesives, and the like. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, a kind of pressure-reducing adhesive may be used, or two or more kinds of pressure-reducing adhesives may be used. Moreover, the whole adhesive layer 12 may be formed from the adhesive force reduction type adhesive, and one part may be formed from the adhesive force reduction type adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing adhesive, or a predetermined part (for example, a semiconductor wafer) The central area that is the target area) is formed from a pressure-reducing adhesive, and the other part (for example, the target area of the wafer ring that is outside the central area) is not reduced. It may be formed from a mold adhesive.

  As the radiation curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used. An adhesive (ultraviolet curable adhesive) can be particularly preferably used.

  Examples of the radiation curable pressure-sensitive adhesive include an addition of a base polymer such as an acrylic polymer and a radiation polymerizable monomer component or oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond. Type radiation curable pressure sensitive adhesive.

  The acrylic polymer is a polymer including a structural unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a structural unit of the polymer. It is preferable that the acrylic polymer is a polymer containing the largest amount of structural units derived from (meth) acrylic acid esters by mass ratio. In addition, an acrylic polymer may use only 1 type and may use 2 or more types. Moreover, in this specification, "(meth) acryl" represents "acryl" and / or "methacryl" (any one or both of "acryl" and "methacryl"), and others are the same. .

  Examples of the (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters such as (meth) acrylic acid alkyl esters, (meth) acrylic acid cycloalkyl esters, and (meth) acrylic acid aryl esters. It is done. Examples of the (meth) acrylic acid alkyl ester include (meth) acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl ester, eicosyl ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester and benzyl ester of (meth) acrylic acid. The said (meth) acrylic acid ester may use only 1 type, and may use 2 or more types. In order to appropriately express basic characteristics such as adhesiveness by (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of (meth) acrylic acid ester in all monomer components for forming the acrylic polymer is 40 It is preferably at least mass%, more preferably at least 60 mass%.

  The acrylic polymer may contain a structural unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester for the purpose of modifying cohesive strength, heat resistance, and the like. Examples of the other monomer components include carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, acrylonitrile, and the like. Examples include functional group-containing monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples include (meth) acrylic acid 8-hydroxyoctyl, (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate, and the like. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate, methyl glycidyl (meth) acrylate, and the like. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth ) Acrylyloxynaphthalene sulfonic acid and the like. As said phosphate group containing monomer, 2-hydroxyethyl acryloyl phosphate etc. are mentioned, for example. Only one kind of the other monomer components may be used, or two or more kinds may be used. In order to appropriately express basic characteristics such as adhesiveness by (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the other monomer component to the total monomer components for forming the acrylic polymer is 60 masses. % Or less is preferable, and more preferably 40% by mass or less.

  The acrylic polymer is a structural unit derived from a polyfunctional monomer that can be copolymerized with a monomer component that forms the acrylic polymer such as (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. May be included. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, penta Erythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (for example, polyglycidyl (meth) acrylate), polyester Examples include monomers having a (meth) acryloyl group and other reactive functional groups in the molecule such as (meth) acrylate and urethane (meth) acrylate. The said polyfunctional monomer may use only 1 type, and may use 2 or more types. In order to appropriately express basic characteristics such as adhesiveness due to (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the polyfunctional monomer in the total monomer components for forming the acrylic polymer is 40 mass. % Or less is preferable, and more preferably 30% by mass or less.

  The acrylic polymer can be obtained by subjecting one or more monomer components including an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.

  The number average molecular weight of the acrylic polymer in the pressure-sensitive adhesive layer 12 is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the number average molecular weight is 100,000 or more, there is a tendency that the low molecular weight substance in the pressure-sensitive adhesive layer is small, and contamination to a die bond film, a semiconductor wafer, or the like can be further suppressed.

  The radiation curable pressure-sensitive adhesive may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be cross-linked to further reduce the low molecular weight substance in the pressure-sensitive adhesive layer 12. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When the crosslinking agent is used, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the base polymer.

  Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta ( And (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight of about 100 to 30000 are preferable. The content of the radiation-curable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 100 parts by mass with respect to 100 parts by mass of the base polymer. About 150 parts by mass. Further, as the addition type radiation curable pressure sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive is an internal radiation-curing type containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or at the polymer main chain terminal in the polymer main chain. A mold pressure-sensitive adhesive is also included. When such an internal radiation-curable pressure-sensitive adhesive is used, there is a tendency that an unintended change in the adhesive property due to the movement of a low molecular weight component in the formed pressure-sensitive adhesive layer 12 can be suppressed. .

  As the base polymer contained in the intrinsic radiation curable pressure-sensitive adhesive, an acrylic polymer is preferable. As the acrylic polymer that can be contained in the intrinsic radiation-curable pressure-sensitive adhesive, the acrylic polymer described as the acrylic polymer contained in the additive-type radiation-curable pressure-sensitive adhesive can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group was polymerized (copolymerized) to obtain an acrylic polymer. Thereafter, the second functional group capable of reacting with the first functional group and the compound having a radiation-polymerizable carbon-carbon double bond are converted into an acrylic polymer while maintaining the radiation-polymerizable property of the carbon-carbon double bond. Examples of the method include a condensation reaction or an addition reaction.

  Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group, a hydroxy group, etc. are mentioned. Among these, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easy reaction tracking. Among them, it is technically difficult to prepare a polymer having a highly reactive isocyanate group. On the other hand, from the viewpoint of easy preparation and availability of an acrylic polymer having a hydroxy group, the first functional group is A combination that is a hydroxy group and the second functional group is an isocyanate group is preferable. Examples of the compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond in this case include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. . In addition, the acrylic polymer having a hydroxy group includes structural units derived from the above-mentioned hydroxy group-containing monomers and ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether. Is mentioned.

  The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, Examples include camphor quinone, halogenated ketone, acyl phosphinoxide, and acyl phosphonate. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxy. Examples include propiophenone and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2. -Morpholinopropane-1 etc. are mentioned. Examples of the benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether, and the like. Examples of the ketal compound include benzyldimethyl ketal. As said aromatic sulfonyl chloride type compound, 2-naphthalene sulfonyl chloride etc. are mentioned, for example. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compounds include benzophenone, benzoylbenzoic acid, 3,3′-dimethyl-4-methoxybenzophenone, and the like. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropyl. Examples include thioxanthone. The content of the photopolymerization initiator in the radiation curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

  The heat-foaming pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component that foams or expands when heated (foaming agent, thermally expandable microsphere, etc.). Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, azides and the like. Examples of the organic foaming agent include chlorofluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; Hydrazine compounds such as sulfonyl hydrazide, diphenylsulfone-3,3′-disulfonyl hydrazide, 4,4′-oxybis (benzenesulfonyl hydrazide), allyl bis (sulfonyl hydrazide); p-toluylene sulfonyl semicarbazide, 4,4′- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); Triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N, N′-dinitrosopentamethylenetetramine, N, N′-di Chill -N, N-nitroso compounds such as N'- dinitrosoterephthalamide, and the like. Examples of the thermally expandable microsphere include a microsphere having a configuration in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the substance that easily gasifies and expands by heating include isobutane, propane, pentane, and the like. Thermally expandable microspheres can be produced by encapsulating a substance that expands easily by heating into a shell-forming substance by a coacervation method or an interfacial polymerization method. As the shell-forming substance, a substance exhibiting heat melting property or a substance that can be ruptured by the action of thermal expansion of the encapsulated substance can be used. Examples of such substances include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

  Examples of the non-reducing pressure-sensitive adhesive include a pressure-sensitive adhesive in a form in which the radiation-curable pressure-sensitive adhesive described above with respect to the pressure-reducing adhesive is cured in advance by irradiation with radiation. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, one type of non-reducing adhesive may be used, or two or more types of non-reducing adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed from a non-reducing adhesive type pressure-sensitive adhesive, or a part thereof may be formed from a non-reducing adhesive type adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive pressure-reducing adhesive, or a predetermined part (for example, wafer ring) in the pressure-sensitive adhesive layer 12 The region to be adhered to, which is outside the central region) is formed from a non-adhesive adhesive, and the other part (for example, the central region to be adhered to the semiconductor wafer) is adhesive. It may be formed from a reduced pressure-sensitive adhesive. Further, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be formed from a non-adhesive pressure-reducing adhesive, or some of the pressure-sensitive adhesive layers in the laminated structure It may be formed from a non-reducing adhesive.

  A radiation-cured pressure-sensitive adhesive (cured radiation-cured pressure-sensitive adhesive) in which radiation-cured pressure-sensitive adhesive has been cured in advance by radiation irradiation is caused by the polymer component contained even if the adhesive strength is reduced by radiation irradiation. It is possible to exhibit the minimum necessary adhesive force for the adhesive layer of the dicing tape in the dicing process or the like. In the case of using a radiation-cured radiation curable pressure-sensitive adhesive, the entire pressure-sensitive adhesive layer 12 may be formed of a radiation-cured radiation-cured pressure-sensitive adhesive in the surface spreading direction of the pressure-sensitive adhesive layer 12. One part may be formed from the radiation-cured adhesive which has been irradiated and the other part may be formed from the radiation-curable adhesive which has not been irradiated.

  As the pressure-sensitive pressure-sensitive adhesive, a known or commonly used pressure-sensitive pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive having an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer may be a polymer containing the structural unit derived from (meth) acrylic acid ester as the structural unit having the largest mass ratio. preferable. As said acrylic polymer, the acrylic polymer demonstrated as an acrylic polymer contained in the above-mentioned addition type radiation-curable adhesive can be employ | adopted, for example.

  The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is a known or conventional pressure-sensitive adhesive such as a crosslinking accelerator, a tackifier, an anti-aging agent, a colorant (pigment, dye, etc.), in addition to the above-described components. Additives used for the agent layer may be blended. As said coloring agent, the compound colored by radiation irradiation is mentioned, for example. When a compound that is colored by irradiation is contained, only the irradiated portion can be colored. The compound colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation but becomes colored by radiation irradiation, and examples thereof include leuco dyes. The usage-amount of the compound colored by the said radiation irradiation is not specifically limited, It can select suitably.

  The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, the viewpoint of balancing the adhesive force to the die bond film 20 before and after the radiation curing of the pressure-sensitive adhesive layer 12. Therefore, about 1-50 micrometers is preferable, More preferably, it is 2-30 micrometers, More preferably, it is 5-25 micrometers.

(Die bond film)
The die bond film 20 has a configuration that can function as an adhesive exhibiting thermosetting for die bonding. The die bond film 20 can be cleaved by applying a tensile stress, and is used by cleaving by applying a tensile stress.

  As described above, the die bond film 20 has a storage elastic modulus E ′ at 25 ° C. measured at a frequency of 10 Hz of 3 to 5 GPa, and preferably 3.2 to 4.8 GPa. By setting the storage elastic modulus E ′ to 3 GPa or more, when stress is applied in a relatively slow speed region at room temperature, the die bond film is difficult to move in the vertical direction (thickness direction) and is not multilayered. Even when a semiconductor chip having a multilayered circuit layer is used as well as a semiconductor chip, from a dicing tape of a die bond film at a normal temperature expansion and thereafter (for example, until a pickup is performed including a cleaning process). Can be made difficult to occur. However, when the separated die bond film is intentionally picked up from the dicing tape and peeled off, stress is applied in a relatively high speed region, so that it can be picked up easily. Furthermore, by setting the storage elastic modulus E ′ to 5 GPa or less, the die bond film is excellent in wettability with respect to the adherend during die bonding, and thus has excellent die bondability, and the semiconductor chip is die bonded (temporarily fixed) to the adherend. Sometimes it can be done well.

  The die bond film 20 preferably has a storage elastic modulus E ′ at −15 ° C. measured at a frequency of 10 Hz of 4 to 7 GPa, more preferably 4.5 to 6.5 GPa. When the storage elastic modulus E ′ is within the above range, when stress is applied at a low temperature, the die bond film is difficult to move in the vertical direction (thickness direction). Even when a multi-layered semiconductor chip is used, it is possible to make it difficult for the die bond film to float from the dicing tape during cool expansion and thereafter (for example, until returning to room temperature). Further, the die bond film can be easily cleaved by the cool expand.

  The die bond film 20 preferably has a storage elastic modulus G ′ at 130 ° C. measured at a frequency of 1 Hz of 0.03 to 0.7 MPa, more preferably 0.1 to 0.6 MPa. As a result, it becomes easy to control the storage elastic modulus E ′ at 25 ° C. within the above range, so that the die bond to the adherend is less likely to occur during normal temperature expansion and thereafter at the time of further cool expansion. There is a tendency to improve the aptitude.

  The die bond film 20 preferably has a loss elastic modulus G ″ at 130 ° C. measured at a frequency of 1 Hz of 0.01 to 0.1 MPa, more preferably 0.02 to 0.08 MPa. As a result, chip floating during die bonding can be made more difficult to occur.

  The die bond film 20 preferably exhibits a storage elastic modulus E ′ of 20 to 200 MPa at 150 ° C. measured at a frequency of 10 Hz after thermosetting, more preferably 22 to 150 MPa. When a semiconductor chip is die-bonded to an adherend in the form of a semiconductor chip with a die-bonding film, and then a wire bonding process described later is performed, the die-bonding film is 150 ° C. due to heat generated by heating during wire bonding in the wire bonding process. Although the die-bonding film 20 exhibits a storage elastic modulus E ′ within the above range at 150 ° C. after the thermosetting, the die-bonding film after the thermosetting is moderately hard and can be heated in the wire bonding process. Even when the temperature is raised to about 150 ° C., the semiconductor chip is difficult to move due to the impact of wire bonding, the force is easily transmitted to the wire bonding pad, and the wire can be appropriately bonded.

  The die bond film 20 preferably exhibits a storage elastic modulus E ′ of 20 to 200 MPa at 250 ° C. measured at a frequency of 10 Hz after thermosetting, and more preferably 22 to 150 MPa. As a reliability evaluation of the semiconductor-related parts, a moisture-resistant solder reflow test in which the semiconductor-related parts are heated to about 250 ° C. is generally performed. By showing this, even if it is a case where it heats to about 250 degreeC in a moisture-proof solder reflow test, peeling from the adherend of a die-bonding film can be made hard to occur.

  In addition, after thermosetting of said die-bonding film means the thing after thermosetting a die-bonding film at 175 degreeC for 1 hour. After the thermosetting, the die-bonding film may be incompletely cured, or further cured (completely cured) to a state where the curing does not proceed further (for example, further cured after incomplete curing). (After post-curing step and the like described below) and after curing.

  In the present embodiment, the die bond film 20 and the adhesive constituting the die bond film 20 may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, and react with the curing agent to form a bond. A thermoplastic resin having a thermosetting functional group to be obtained may be included. When the adhesive which comprises the die-bonding film 20 contains the thermoplastic resin which has a thermosetting functional group, the said adhesive does not need to contain a thermosetting resin (epoxy resin etc.). The die bond film 20 may have a single layer structure or a multilayer structure.

  When the die bond film 20 includes a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting resin. A polyimide resin etc. are mentioned. Only 1 type may be used for the said thermosetting resin, and 2 or more types may be used for it. An epoxy resin is preferred as the thermosetting resin because it tends to have a low content of ionic impurities that can cause corrosion of the semiconductor chip to be die bonded. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, ortho Examples include cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, glycidylamine type epoxy resin and the like. Among these, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, and a tetraphenylolethane type epoxy resin are preferable because they are highly reactive with a phenol resin as a curing agent and have excellent heat resistance.

  Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolac-type phenol resins, resol-type phenol resins, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, and a nonylphenol novolak resin. Only 1 type may be used for the said phenol resin, and 2 or more types may be used for it. Of these, phenol novolac resins and phenol aralkyl resins are preferred from the viewpoint of improving the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding.

  In the die bond film 20, from the viewpoint of sufficiently proceeding the curing reaction between the epoxy resin and the phenol resin, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent of epoxy groups in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents.

  When the die bond film 20 includes a thermosetting resin, the content ratio of the thermosetting resin is the total mass of the die bond film 20 from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die bond film 20. On the other hand, 5-60 mass% is preferable, More preferably, it is 10-50 mass%.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. The said thermoplastic resin may use only 1 type, and may use 2 or more types. As the thermoplastic resin, an acrylic resin is preferable because it has few ionic impurities and has high heat resistance, so that it is easy to ensure the bonding reliability of the die bond film 20.

  The acrylic resin is preferably a polymer containing a structural unit derived from (meth) acrylic acid ester as a structural unit having the largest mass ratio. Examples of the (meth) acrylic acid esters include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters that form an acrylic polymer that can be contained in the above-described additive-type radiation-curable pressure-sensitive adhesive. It is done. The acrylic resin may contain a structural unit derived from another monomer component copolymerizable with (meth) acrylic acid ester. Examples of the other monomer components include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, acrylonitrile, and other functional groups. Monomers, various polyfunctional monomers, and the like are specifically exemplified as other monomer components constituting an acrylic polymer that can be included in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 described above. Can be used. From the viewpoint of realizing a high cohesive force in the die bond film 20, the acrylic resin is preferably a (meth) acrylic acid ester (particularly, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms). , A carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly polyglycidyl polyfunctional monomer), more preferably ethyl acrylate, butyl acrylate, and acrylic acid And a copolymer of acrylonitrile and polyglycidyl (meth) acrylate.

  The acrylic resin preferably has a glass transition temperature (Tg) of 5 to 35 ° C., more preferably 10 to 30 ° C., from the viewpoint that the respective storage elastic modulus and loss elastic modulus are easily within the desired ranges. It is.

  When the die bond film 20 includes a thermoplastic resin together with the thermosetting resin, the content ratio of the thermoplastic resin is desired to be the above-described storage elastic modulus and loss elastic modulus by adjusting with the content ratio of the thermosetting resin. From the viewpoint of being easily within the range of 30 to 30% of the total mass of organic components (for example, thermosetting resin, thermoplastic resin, curing catalyst, silane coupling agent, dye, etc.) excluding the filler in the die bond film 20. 70 mass% is preferable, More preferably, it is 40-60 mass%, More preferably, it is 45-55 mass%.

  When the die bond film 20 includes a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from (meth) acrylic acid ester as a structural unit having the largest mass ratio. Examples of the (meth) acrylic acid esters include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters that form an acrylic polymer that can be contained in the above-described additive-type radiation-curable pressure-sensitive adhesive. It is done. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Among these, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable. Moreover, it is preferable that a hardening | curing agent is included with a thermosetting functional group containing acrylic resin, and as said hardening | curing agent, it is illustrated, for example as a crosslinking agent which can be contained in the above-mentioned radiation-curing-type adhesive for adhesive layer 12 formation. Can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as the curing agent, and for example, the various phenol resins described above can be used.

  The die bond film 20 preferably contains a filler. By blending the filler into the die bond film 20, the above-described storage elastic modulus and loss elastic modulus of the die bond film 20 can be easily adjusted. Furthermore, physical properties such as conductivity, thermal conductivity, and elastic modulus can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal In addition to porous silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black, graphite and the like can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As said filler, only 1 type may be used and 2 or more types may be used.

  The average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle size is 0.005 μm or more, wettability and adhesion to an adherend such as a semiconductor wafer are further improved. When the average particle size is 10 μm or less, the effect of the filler added for imparting the above properties can be made sufficient, and heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (for example, trade name “LA-910”, manufactured by Horiba, Ltd.).

  When the die-bonding film 20 contains a filler, the content ratio of the filler is 30 to 70 with respect to the total mass of the die-bonding film 20 from the viewpoint that the above-described storage elastic modulus and loss elastic modulus are easily within the desired ranges. The mass% is preferable, more preferably 40 to 60 mass%, still more preferably 42 to 55 mass%.

  The die bond film 20 may contain other components as necessary. Examples of the other components include a curing catalyst, a flame retardant, a silane coupling agent, an ion trap agent, and a dye. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, benzotriazole, and the like. Only one kind of the other additives may be used, or two or more kinds thereof may be used.

  In particular, the die bond film 20 includes a thermoplastic resin (particularly an acrylic resin), a thermosetting resin, and a filler from the viewpoint of easily setting the above-described storage elastic modulus and loss elastic modulus within desired ranges. The content ratio of the thermoplastic resin (especially acrylic resin) with respect to the total mass of the organic component excluding the filler in 20 is 30 to 70% by mass (preferably 40 to 60% by mass, more preferably 45 to 55% by mass). The filler content relative to the total mass of the die bond film 20 is preferably 30 to 70 mass% (preferably 40 to 60 mass%, more preferably 42 to 55 mass%).

  Although the thickness (in the case of a laminated body) of the die-bonding film 20 is not specifically limited, For example, it is 1-200 micrometers. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

  The die bond film 20 preferably has a glass transition temperature (Tg) of 0 ° C. or higher, more preferably 10 ° C. or higher. When the glass transition temperature is 0 ° C. or higher, the die bond film 20 can be easily cleaved by the cool expand. The upper limit of the glass transition temperature of the die bond film 20 is, for example, 100 ° C.

  As shown in FIG. 1, the die-bonding film 20 includes a single-layer die-bonding film. Note that in this specification, a single layer refers to a layer having the same composition, and includes a layer in which a plurality of layers having the same composition are stacked. However, the die bond film in the dicing die bond film of the present invention is not limited to this example, and may be, for example, a multilayer structure in which two or more types of adhesive films having different compositions are laminated.

  The dicing die-bonding film 1 which is one embodiment of the dicing die-bonding film of the present invention is manufactured as follows, for example. First, the substrate 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, it is necessary after forming a coating film by applying a composition (adhesive composition) for forming an adhesive layer including an adhesive and a solvent for forming the adhesive layer 12 on the substrate 11. Accordingly, the pressure-sensitive adhesive layer 12 can be formed by solidifying the coating film by solvent removal or curing. Examples of the application method include known or conventional application methods such as roll coating, screen coating, and gravure coating. Moreover, as solvent removal conditions, it carries out within the range of temperature 80-150 degreeC, time 0.5-5 minutes, for example. Alternatively, the pressure-sensitive adhesive layer 12 may be formed by applying the pressure-sensitive adhesive composition on the separator to form a coating film, and then solidifying the coating film under the above-mentioned solvent removal conditions. Then, the adhesive layer 12 is bonded together with the separator on the base material 11. The dicing tape 10 can be produced as described above.

  About the die-bonding film 20, the composition (adhesive composition) which forms the die-bonding film 20 containing resin, a filler, a curing catalyst, a solvent etc. first is produced. Next, the adhesive composition is applied onto the separator to form a coating film, and then the coating film is solidified by solvent removal, curing, or the like as necessary to form the die bond film 20. It does not specifically limit as a coating method, For example, well-known thru | or usual coating methods, such as roll coating, screen coating, and gravure coating, are mentioned. Moreover, as solvent removal conditions, it carries out within the range of temperature 70-160 degreeC, time 1-5 minutes, for example.

  Subsequently, the separator is peeled off from each of the dicing tape 10 and the die bond film 20, and the die bond film 20 and the pressure-sensitive adhesive layer 12 are bonded to each other so that they are bonded to each other. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and for example, 30 to 50 ° C. is preferable, and 35 to 45 ° C. is more preferable. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable, More preferably, it is 1-10 kgf / cm.

  As described above, when the pressure-sensitive adhesive layer 12 is a radiation curable pressure-sensitive adhesive layer, when the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the die-bonding film 20 is bonded, the pressure-sensitive adhesive layer 12 is, for example, adhesive from the substrate 11 side. The agent layer 12 is irradiated with radiation, and the irradiation amount is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ. In the dicing die-bonding film 1, the region where the pressure-sensitive adhesive layer 12 is irradiated as a measure for reducing the adhesive strength (irradiation region R) is usually a region other than the peripheral portion in the bonding region of the die-bonding film 20 in the pressure-sensitive adhesive layer 12. is there. When the irradiation region R is partially provided, it can be performed through a photomask in which a pattern corresponding to the region excluding the irradiation region R is formed. Moreover, the method of irradiating a spot-like radiation and forming the irradiation area | region R is also mentioned.

  As described above, for example, the dicing die-bonding film 1 shown in FIG. 1 can be produced. The dicing die bond film 1 may be provided with a separator (not shown) on the die bond film 20 side so as to cover at least the die bond film 20. When the die bond film 20 is smaller than the pressure-sensitive adhesive layer 12 of the dicing tape 10 and there is a region where the die-bonding film 20 is not bonded in the pressure-sensitive adhesive layer 12, for example, the separator includes the die-bonding film 20 and the pressure-sensitive adhesive layer 12. It may be provided in the form of covering at least. The separator is an element for protecting at least the die bond film 20 (for example, the die bond film 20 and the pressure-sensitive adhesive layer 12) from being exposed, and is peeled off from the film when the dicing die bond film 1 is used. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate-type release agent. .

[Method for Manufacturing Semiconductor Device]
A semiconductor device can be manufactured using the dicing die-bonding film of the present invention. Specifically, a process of attaching a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer that can be singulated to a plurality of semiconductor chips to the die bond film side of the dicing die bond film of the present invention ("process" A may be referred to as “A”), and a dicing tape in the dicing die-bonding film of the present invention is expanded under relatively low temperature conditions, and at least the die-bonding film is cleaved to obtain a semiconductor chip with a die-bonding film ( (Sometimes referred to as “Process B”) and a process of expanding the dicing tape under relatively high temperature conditions to increase the distance between the semiconductor chips with the die-bonding film (sometimes referred to as “Process C”). And pick up the semiconductor chip with the die bond film. By a production method comprising a step (hereinafter sometimes referred to as "step D") that, it is possible to manufacture a semiconductor device.

  A semiconductor wafer divided body including the plurality of semiconductor chips used in step A or a semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 2A and 2B, the division grooves 30a are formed in the semiconductor wafer W (division groove formation step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. Has been. Then, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the first wafer W is held in the state where the semiconductor wafer W is held on the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the surface Wa side using a rotating blade such as a dicing apparatus. The dividing groove 30a is an air gap for separating the semiconductor wafer W in units of semiconductor chips (the dividing groove 30a is schematically indicated by a thick line in FIGS. 2 to 4).

  Next, as shown in FIG. 2C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is bonded. And peeling off.

  Next, as shown in FIG. 2D, in a state where the semiconductor wafer W is held on the wafer processing tape T2, thinning is performed by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness. (Wafer thinning process). Grinding can be performed using a grinding apparatus equipped with a grinding wheel. By this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting, on the second surface Wb side, a portion to be separated into a plurality of semiconductor chips 31 on the wafer. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is appropriately selected depending on the semiconductor device to be manufactured.

(Process A)
In step A, a semiconductor wafer divided body including a plurality of semiconductor chips or a semiconductor wafer that can be singulated into a plurality of semiconductor chips is attached to the die bonding film 20 side of the dicing die bond film 1.

  In one embodiment in the process A, as shown in FIG. 3A, the semiconductor wafer 30 </ b> A held on the wafer processing tape T <b> 2 is bonded to the die bond film 20 of the dicing die bond film 1. Thereafter, as shown in FIG. 3B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film 1 is a radiation curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is bonded to the die-bonding film 20 instead of the above-described radiation irradiation in the manufacturing process of the dicing die-bonding film 1. After that, the adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the substrate 11 side. The irradiation amount is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ. In the dicing die-bonding film 1, the region where the adhesive layer 12 is irradiated as an adhesive force reduction measure (irradiation region R shown in FIG. 1) is, for example, the peripheral portion in the die-bonding film 20 bonding region in the adhesive layer 12. This area is excluded.

(Process B)
In the process B, the dicing tape 10 in the dicing die bond film 1 is expanded under relatively low temperature conditions, and at least the die bond film 20 is cleaved to obtain a semiconductor chip with a die bond film.

  In one embodiment in Step B, first, after attaching the ring frame 41 on the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, as shown in FIG. The dicing die bond film 1 is fixed to the holder 42 of the expanding device.

  Next, a first expanding process (cool expanding process) under relatively low temperature conditions is performed as shown in FIG. 4B to separate the semiconductor wafer 30A into a plurality of semiconductor chips 31. Then, the die bond film 20 of the dicing die bond film 1 is divided into small pieces of the die bond film 21 to obtain the semiconductor chip 31 with the die bond film. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die bond film 1 in the drawing, and is raised, and the dicing die bond film 1 to which the semiconductor wafer 30A is bonded. The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under conditions that cause a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa in the dicing tape 10. The temperature condition in the cool expanding step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding process is preferably 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

  In the process B, when the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips is used, the thin portion of the semiconductor wafer 30A that is easily broken can be cleaved, resulting in singulation into the semiconductor chips 31. At the same time, in step B, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the die bond film 20 in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, while the semiconductor chip 31 is suppressed. A tensile stress generated in the dicing tape 10 acts on a portion of the dividing groove between them located in the vertical direction in the drawing in a state where such a deformation suppressing action does not occur. As a result, in the die bond film 20, the portion located in the vertical direction of the dividing groove between the semiconductor chips 31 is cleaved. After the cleaving by the expand, as shown in FIG. 4C, the push-up member 43 is lowered and the expanded state in the dicing tape 10 is released.

(Process C)
In step C, the dicing tape 10 is expanded under relatively high temperature conditions to widen the interval between the semiconductor chips with the die bond film.

  In one embodiment in Step C, first, a second expanding step (normal temperature expanding step) under relatively high temperature conditions is performed as shown in FIG. Increase the (separation distance). In step C, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die-bonding film 1 is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, and preferably 15 to 30 ° C. The expansion speed (speed at which the push-up member 43 is raised) in the second expanding step is, for example, 0.1 to 10 mm / second, and preferably 0.3 to 1 mm / second. Moreover, the amount of expansion in the second expanding step is, for example, 3 to 16 mm. In step C, the separation distance of the semiconductor chip 31 with the die bond film is increased to such an extent that the semiconductor chip 31 with the die bond film can be appropriately picked up from the dicing tape 10 in a pickup process described later. After expanding the separation distance by the expand, the push-up member 43 is lowered as shown in FIG. 5B to cancel the expanded state of the dicing tape 10. From the viewpoint of suppressing the separation distance of the semiconductor chip 31 with the die-bonding film on the dicing tape 10 after the expanded state is released, the portion outside the holding region of the semiconductor chip 31 in the dicing tape 10 is removed before the expanded state is released. It is preferable to shrink by heating.

  After step C, the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with the die bond film may be cleaned as necessary using a cleaning liquid such as water.

(Process D)
In step D (pickup step), the separated semiconductor chip with a die bond film is picked up. In one embodiment in the process D, the semiconductor chip 31 with a die bond film is picked up from the dicing tape 10 as shown in FIG. For example, a semiconductor chip 31 with a die bond film to be picked up is lifted through the dicing tape 10 by raising the pin member 44 of the pickup mechanism on the lower side of the dicing tape 10 in the figure, and then sucked and held by the suction jig 45. . In the pickup process, the pushing speed of the pin member 44 is, for example, 1 to 100 mm / second, and the pushing amount of the pin member 44 is, for example, 100 to 500 μm.

  The manufacturing method of the semiconductor device may include processes other than the processes A to D. For example, in one embodiment, as shown in FIG. 7A, the picked-up semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51 via the die bond film 21 (temporary fixing step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive strength at 25 ° C. when the die-bonding film 21 is temporarily fixed is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shear bonding force of the die bond film 21 is 0.2 MPa or more causes shearing at the bonding surface between the die bond film 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire bonding step described later. It is possible to appropriately perform wire bonding while suppressing deformation. Moreover, 0.01 MPa or more with respect to the to-be-adhered body 51 is preferable, and, more preferably, it is 0.01-5 MPa with respect to the to-be-adhered body 51 at the time of temporarily adhering the die-bonding film 21.

  Next, as shown in FIG. 7B, an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected via a bonding wire 52 ( Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding with heating, and is performed so as not to thermoset the die bond film 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, and preferably 80 to 220 ° C. The heating time is several seconds to several minutes.

  Next, as shown in FIG. 7C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51 (sealing step). In the sealing step, thermosetting of the die bond film 21 proceeds. In the sealing step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. When the curing of the sealing resin 53 does not proceed sufficiently in the sealing process, a post-curing process for completely curing the sealing resin 53 is performed after the sealing process. Even if the die bond film 21 is not completely thermoset in the sealing process, the die bond film 21 can be completely cured together with the sealing resin 53 in the post-curing process. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  In the above embodiment, as described above, after the semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51, the wire bonding step is performed without completely thermosetting the die bond film 21. Instead of such a configuration, in the method for manufacturing a semiconductor device, the semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51, and then the wire bonding process is performed after the die bond film 21 is thermally cured. Good.

  In the semiconductor device manufacturing method, as another embodiment, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described above with reference to FIG. After the process described above with reference to FIG. 2C, in the wafer thinning process shown in FIG. 8, the wafer is reduced to a predetermined thickness while the semiconductor wafer W is held on the wafer processing tape T2. The semiconductor wafer divided body 30 </ b> B including the plurality of semiconductor chips 31 and held on the wafer processing tape T <b> 2 is thinned by grinding from the second surface Wb. In the wafer thinning step, a technique of grinding the wafer (first technique) until the dividing groove 30a is exposed on the second surface Wb side may be employed, or the dividing groove 30a may be reached from the second surface Wb side. A method of grinding the wafer to the front and then forming a semiconductor wafer divided body 30B by generating a crack between the divided groove 30a and the second surface Wb by the action of the pressing force from the rotating grindstone to the wafer (second) May be adopted. Depending on the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 2A and 2B is appropriately determined. In FIG. 8, the divided grooves 30a that have undergone the first technique, or the divided grooves 30a that have undergone the second technique and cracks connected thereto are schematically represented by thick lines. In the manufacturing method of the semiconductor device, in step A, the semiconductor wafer divided body 30B thus manufactured is used instead of the semiconductor wafer 30A as the semiconductor wafer divided body, and each of the above-described semiconductor devices 30B described above with reference to FIGS. You may perform a process.

  FIG. 9A and FIG. 9B show a first expanding process (cool expanding process) performed after the process B in the embodiment, that is, the semiconductor wafer divided body 30 </ b> B is bonded to the dicing die bond film 1. In the process B in the embodiment, the hollow cylindrical push-up member 43 provided in the expanding apparatus is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the drawing, and is bonded to the semiconductor wafer divided body 30B. The dicing tape 10 of the dicing die bond film 1 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. The tensile stress in this expand is set appropriately. The temperature condition in the cool expanding step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding process is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding process, the die-bonding film 20 of the dicing die-bonding film 1 is cut into small pieces of the die-bonding film 21 to obtain a semiconductor chip 31 with a die-bonding film. Specifically, in the cool expanding process, in the die bond film 20 in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is caused in each region where the semiconductor chips 31 of the semiconductor wafer divided body 30B are in close contact. On the other hand, tensile stress generated in the dicing tape 10 is applied to a portion of the dividing groove 30a between the semiconductor chips 31 that is positioned in the vertical direction in the figure in a state in which such a deformation suppressing action does not occur. As a result, in the die-bonding film 20, the part located in the vertical direction of the dividing groove 30a between the semiconductor chips 31 in the drawing is cleaved.

  In the semiconductor device manufacturing method, as another embodiment, a semiconductor wafer 30C manufactured as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in the step A.

In the embodiment, first, the modified region 30b is formed in the semiconductor wafer W as shown in FIGS. 10 (a) and 10 (b). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. Has been. Then, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the condensing point is held inside the wafer while the semiconductor wafer W is held on the wafer processing tape T3. Is applied to the semiconductor wafer W along the planned dividing line from the side opposite to the wafer processing tape T3, and modified into the semiconductor wafer W due to ablation by multiphoton absorption. Region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chips. The method for forming the modified region 30b on the division line by laser light irradiation in the semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. The laser light irradiation conditions in the embodiment are, for example, It adjusts suitably within the range of the following conditions.
<Laser irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross section 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse Repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) condenser lens Magnification 100 times or less NA 0.55
Transmittance with respect to laser light wavelength: 100% or less (C) Moving speed of the table on which the semiconductor substrate is placed 280 mm / second or less

  Next, as shown in FIG. 10C, the semiconductor wafer W is held by the wafer processing tape T3 and thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness. Thus, a semiconductor wafer 30C that can be singulated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the manufacturing method of the semiconductor device, in step A, the semiconductor wafer 30C thus manufactured as a semiconductor wafer that can be singulated is used instead of the semiconductor wafer 30A, and has been described above with reference to FIGS. You may perform each process.

  FIG. 11A and FIG. 11B show a first expanding process (cool expanding process) that is performed after the process B in the embodiment, that is, the semiconductor wafer 30 </ b> C is bonded to the dicing die bond film 1. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die bond film 1 in the drawing and is raised, and the dicing die bond film 1 to which the semiconductor wafer 30C is bonded is attached. The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. The tensile stress in this expand is set appropriately. The temperature condition in the cool expanding step is, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding process is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding process, the die-bonding film 20 of the dicing die-bonding film 1 is cut into small pieces of the die-bonding film 21 to obtain a semiconductor chip 31 with a die-bonding film. Specifically, in the cool expanding process, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and separation into the semiconductor chips 31 occurs. At the same time, in the cool expanding step, in the die bond film 20 in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region where the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. On the other hand, tensile stress generated in the dicing tape 10 is applied to a location in the vertical direction in the drawing of the crack formation location of the wafer in a state in which such a deformation suppressing action does not occur. As a result, in the die bond film 20, the portion of the crack formation portion between the semiconductor chips 31 located in the vertical direction in the drawing is cleaved.

  In the method for manufacturing a semiconductor device, the dicing die-bonding film 1 can be used for obtaining a semiconductor chip with a die-bonding film as described above. However, when a plurality of semiconductor chips are stacked for three-dimensional mounting. It can also be used in applications for obtaining a semiconductor chip with a die bond film. Between the semiconductor chips 31 in such three-dimensional mounting, a spacer may be interposed together with the die bond film 21, or a spacer may not be interposed.

  EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

Example 1
(Production of dicing tape)
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide 4 parts by mass and 80 parts by mass of toluene were added, and polymerization was carried out in a nitrogen stream at 60 ° C. for 10 hours to obtain a solution containing acrylic polymer A.
A solution containing acrylic polymer A ′ is prepared by adding 1.2 parts by weight of 2-methacryloyloxyethyl isocyanate (MOI) to the solution containing acrylic polymer A and performing an addition reaction at 50 ° C. for 60 hours in an air stream. Got.
Next, with respect to 100 parts by mass of the acrylic polymer A ′, 1.3 parts by mass of a polyisocyanate compound (trade name “Coronate L”, manufactured by Tosoh Corporation), and a photopolymerization initiator (trade name “Irgacure 184”, 3 parts by mass of BASF (manufactured by BASF) was added to prepare an adhesive composition A.
The obtained pressure-sensitive adhesive composition A was applied on the surface of the PET separator subjected to silicone treatment, and the solvent was removed by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. Next, an EVA film (manufactured by Gunze Co., Ltd., thickness: 115 μm) as a base material was bonded to the exposed surface of the pressure-sensitive adhesive layer A, and stored at 23 ° C. for 72 hours to prepare a dicing tape A.

(Production of die bond film)
100 parts by mass of acrylic resin (trade name “SG-P3”, manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.), 45 parts by mass of epoxy resin (trade name “JER1001”, manufactured by Mitsubishi Chemical Corporation), phenol 50 parts by mass of resin (trade name “MEH-7785ss”, manufactured by Meiwa Kasei Co., Ltd.), 190 parts by weight of spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.), and curing catalyst (trade name “ 0.6 part by mass of “Cureazole 2PHZ” (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition A having a solid content concentration of 20% by mass. Next, it apply | coated on the surface which gave the silicone process of PET type | system | group separator (thickness 50 micrometers), and it heated for 2 minutes and removed the solvent at 130 degreeC, and produced die bond film A with a thickness of 10 micrometers. Table 1 shows the content ratio of the acrylic resin relative to the total mass of the organic components (total mass of the components excluding the spherical silica) in the die bond film A and the content ratio of silica relative to the total mass of the die bond film A.

(Production of dicing die bond film)
The PET separator was peeled from the dicing tape A, and the die bond film A was bonded to the exposed pressure-sensitive adhesive layer. In bonding, the center of the dicing tape and the center of the die bond film were aligned. Moreover, the hand roller was used for bonding. As described above, a dicing die bond film having a laminated structure including a dicing tape and a die bond film was produced.

Example 2
(Production of die bond film)
100 parts by mass of acrylic resin (trade name “SG-P3”, manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.), 45 parts by mass of epoxy resin (trade name “JER1001”, manufactured by Mitsubishi Chemical Corporation), phenol 50 parts by mass of resin (trade name “MEH-7851ss”, manufactured by Meiwa Kasei Co., Ltd.), 200 parts by mass of spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.), and a curing catalyst (trade name “ 1.0 part by mass of “Cureazole 2PHZ” (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to and mixed with methyl ethyl ketone to obtain an adhesive composition B having a solid content concentration of 20% by mass. Next, it apply | coated on the surface which gave the silicone process of the PET-type separator (thickness 50 micrometers), and it heated for 2 minutes at 130 degreeC, and removed the solvent, and produced the 10-micrometer-thick die-bonding film B. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components excluding the spherical silica) in the die bond film B and the silica content ratio with respect to the total mass of the die bond film B.

(Production of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the die bond film B was used instead of the dicing bond film A.

Example 3
(Production of die bond film)
100 parts by mass of acrylic resin (trade name “SG-P3”, manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.), 45 parts by mass of epoxy resin (trade name “JER1001”, manufactured by Mitsubishi Chemical Corporation), phenol 50 parts by mass of resin (trade name “MEH-7785ss”, manufactured by Meiwa Kasei Co., Ltd.), 130 parts by weight of spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.), and curing catalyst (trade name “ 0.4 parts by mass of “Cureazole 2PHZ” (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to and mixed with methyl ethyl ketone to obtain an adhesive composition C having a solid content concentration of 20% by mass. Next, it apply | coated on the surface which gave the silicone process of the PET-type separator (thickness 50 micrometers), and it heated at 130 degreeC for 2 minutes, and removed the solvent, and produced the 10-micrometer-thick die-bonding film C. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of organic components (total mass of components excluding spherical silica) in the die bond film C and the content ratio of silica with respect to the total mass of the die bond film C.

(Production of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the die bond film C was used instead of the dicing bond film A.

Comparative Example 1
(Production of die bond film)
Acrylic resin (trade name “SG-708-6”, manufactured by Nagase ChemteX Corporation, glass transition temperature 4 ° C.) 100 parts by mass, epoxy resin (trade name “JER1001”, manufactured by Mitsubishi Chemical Corporation) 45 parts by mass , 50 parts by mass of phenol resin (trade name “MEH-7951ss”, manufactured by Meiwa Kasei Co., Ltd.), 100 parts by mass of spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.), and curing catalyst (product) 0.6 parts by mass of “CUREZOL 2PHZ” (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition D having a solid content concentration of 20% by mass. Next, it apply | coated on the surface which gave the silicone process of PET type | system | group separator (thickness 50 micrometers), heated for 2 minutes at 130 degreeC, and removed the solvent, and produced 10-micrometer-thick die-bonding film D. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components excluding the spherical silica) in the die bond film D and the content ratio of the silica with respect to the total mass of the die bond film D.

(Production of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the die bond film D was used instead of the dicing bond film A.

Comparative Example 2
(Production of die bond film)
100 parts by mass of acrylic resin (trade name “SG-70L”, manufactured by Nagase ChemteX Corporation, glass transition temperature −13 ° C.), 40 parts by mass of epoxy resin (trade name “JER1001”, manufactured by Mitsubishi Chemical Corporation), 40 parts by mass of phenol resin (trade name “MEH-7851ss”, manufactured by Meiwa Kasei Co., Ltd.), 200 parts by mass of spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.), and curing catalyst (trade name) 0.6 part by mass of “Curazole 2PHZ” (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition E having a solid content concentration of 20% by mass. Next, it apply | coated on the surface which gave the silicone process of PET type | system | group separator (thickness 50 micrometers), and it heated for 2 minutes at 130 degreeC, and removed the solvent, and produced the 10-micrometer-thick die-bonding film E. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components excluding the spherical silica) in the die bond film E and the silica content ratio with respect to the total mass of the die bond film E.

(Production of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the die bond film E was used instead of the dicing bond film A.

Comparative Example 3
(Production of die bond film)
100 parts by mass of acrylic resin (trade name “SG-P3”, manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.), 45 parts by mass of epoxy resin (trade name “JER1001”, manufactured by Mitsubishi Chemical Corporation), phenol 50 parts by mass of resin (trade name “MEH-7951ss”, manufactured by Meiwa Kasei Co., Ltd.), 100 parts by mass of spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.), and a curing catalyst (trade name “ 0.5 parts by mass of “Cureazole 2PHZ” (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to and mixed with methyl ethyl ketone to obtain an adhesive composition F having a solid content concentration of 20% by mass. Next, it apply | coated on the surface which gave the silicone process of PET type | system | group separator (50 micrometers in thickness), heated for 2 minutes at 130 degreeC, and removed the solvent, and produced the 10-micrometer-thick die-bonding film F. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (total mass of the components excluding the spherical silica) in the die bond film F and the silica content ratio with respect to the total mass of the die bond film F.

(Production of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the die bond film F was used instead of the dicing bond film A.

Comparative Example 4
(Production of die bond film)
100 parts by mass of acrylic resin (trade name “SG-P3”, manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.), 45 parts by mass of epoxy resin (trade name “JER1001”, manufactured by Mitsubishi Chemical Corporation), phenol 50 parts by mass of resin (trade name “MEH-7851ss”, manufactured by Meiwa Kasei Co., Ltd.), 250 parts by mass of spherical silica (trade name “SO-25R”, manufactured by Admatex Co., Ltd.), and a curing catalyst (trade name “ 0.5 part by mass of “Cureazole 2PHZ” (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to and mixed with methyl ethyl ketone to obtain an adhesive composition G having a solid content concentration of 20% by mass. Next, it apply | coated on the surface which gave the silicone process of PET type | system | group separator (thickness 50 micrometers), heated for 2 minutes at 130 degreeC, and removed the solvent, and produced the 10-micrometer-thick die-bonding film G. Table 1 shows the content ratio of the acrylic resin with respect to the total mass of the organic components (the total mass of the components excluding the spherical silica) in the die bond film G and the content ratio of the silica with respect to the total mass of the die bond film G.

(Production of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the die bond film G was used instead of the dicing bond film A.

<Evaluation>
The following evaluation was performed about the die-bonding film and dicing die-bonding film obtained by the Example and the comparative example. The results are shown in Table 1.

(Storage elastic modulus E ′ at 25 ° C. measured at a frequency of 10 Hz and storage elastic modulus E ′ at −15 ° C. measured at a frequency of 10 Hz)
From the die bond films obtained in Examples and Comparative Examples, a strip of 4 mm in width and 40 mm in length was cut out with a cutter knife to obtain a test piece, and a solid viscoelasticity measuring device (measuring device: Rheogel-E4000, manufactured by UBM) ), The dynamic storage elastic modulus was measured in the tensile mode in the temperature range of −50 to 100 ° C. under the conditions of a frequency of 10 Hz, a heating rate of 5 ° C./min, and an initial chuck distance of 22.5 mm. Then, the values at 25 ° C. and −15 ° C. are read, and these values are respectively stored at 25 ° C. measured at a frequency of 10 Hz and stored at −15 ° C. measured at a frequency of 10 Hz. Obtained as rate E '. The evaluation results are shown in the columns of “Storage elastic modulus E ′ (25 ° C., 10 Hz)” and “Storage elastic modulus E ′ (−15 ° C., 10 Hz)” in Table 1, respectively.

(Storage elastic modulus G ′ at 130 ° C. measured at a frequency of 1 Hz and loss elastic modulus G ″ at 130 ° C. measured at a frequency of 1 Hz)
The die bond films respectively obtained in the examples and comparative examples were laminated to 300 μm, and punched into a circular shape with a 10 mmφ punch to prepare a measurement sample. Using a measuring jig of 8 mmΦ, the storage elastic modulus and loss elastic modulus were measured in the range of 75 to 150 ° C. under the conditions of a gap of 250 μm, a heating rate of 10 ° C./min, a frequency of 5 rad / sec, and a strain of 10% (measuring device) : HAAKE MARSIII, manufactured by Thermo Scientific). Then, the values of the storage elastic modulus and the loss elastic modulus at 130 ° C. are read, and these values are measured under the conditions of the storage elastic modulus G ′ at 130 ° C. measured at a frequency of 1 Hz and the frequency of 1 Hz, respectively. Loss elastic modulus G ″ at 130 ° C. The evaluation results are shown in the columns of “storage elastic modulus G ′ (130 ° C., 1 Hz)” and “loss elastic modulus G ″ (130 ° C., 1 Hz)” in Table 1, respectively.

(Storage elastic modulus E ′ at 150 ° C. measured at a frequency of 10 Hz after thermosetting, and storage elastic modulus E ′ at 250 ° C. measured at a frequency of 10 Hz after thermosetting)
The die bond films obtained in Examples and Comparative Examples were cured by heating for 1 hour under a temperature condition of 175 ° C., and then cut out from the thermally cured die bond film into a strip shape having a width of 4 mm and a length of 40 mm with a cutter knife. Using a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric Co., Ltd.), a temperature of 0 to 300 ° C. under the conditions of a frequency of 10 Hz, a heating rate of 10 ° C./min, and an initial chuck distance of 22.5 mm. In the range, the dynamic storage modulus was measured in tensile mode. Then, the values at 150 ° C. and 250 ° C. are read, and these values are measured under the conditions of the storage elastic modulus at 150 ° C. measured under the condition of the frequency 10 Hz after thermosetting and the frequency 10 Hz after the thermosetting, respectively. Obtained as a storage elastic modulus E ′ at 250 ° C. The evaluation results are shown in the columns of “Storage modulus E ′ after curing (150 ° C., 10 Hz)” and “Storage modulus E ′ after curing (250 ° C., 10 Hz)” in Table 1, respectively.

(Cleavage and floating during cool expansion)
Using the product name “ML300-Integration” (manufactured by Tokyo Seimitsu Co., Ltd.) as a laser processing device, align the focal point with the inside of a 12-inch semiconductor wafer, and follow the grid-like (10 mm × 10 mm) division line Then, a laser beam was irradiated from the surface to form a modified region inside the semiconductor wafer. Laser light irradiation was performed under the following conditions.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross section 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized light (B) Condensing lens
50 times magnification
NA 0.55
60% transmittance for laser wavelength
(C) Moving speed of the table on which the semiconductor substrate is placed 100 mm / second

  After the modified region is formed inside the semiconductor wafer, a backgrinding protective tape is attached to the surface of the semiconductor wafer, and the thickness of the semiconductor wafer is adjusted using a back grinder (trade name “DGP8760”, manufactured by DISCO Corporation). The back surface was ground to 30 μm.

  The semiconductor wafer on which the modified region was formed and the dicing ring were bonded to the dicing die bond film obtained in the examples and comparative examples. Then, the semiconductor wafer and the die bond film were cleaved using a die separator (trade name “DDS2300”, manufactured by DISCO Corporation). Specifically, first, the semiconductor wafer and the die bond film were cleaved by performing a cool expansion with a cool expander unit under conditions of a temperature of −15 ° C., an expansion speed of 200 mm / second, and an expansion amount of 12 mm. Thereafter, room temperature expansion was performed in a heat expander unit under the conditions of room temperature, an expanding speed of 1 mm / second, and an expanding amount of 7 mm. Then, while maintaining the expanded state, the dicing tape was thermally contracted on the outer peripheral portion of the semiconductor chip at a heat temperature of 200 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 5 ° / sec. The sample was evaluated with a die bonder (trade name “Die Bonder SPA-300”, manufactured by Shinkawa Co., Ltd.) with a pick-up height of 5 pins and a pick-up height of 500 μm, and the pick-up rate was 90% or more. The case was evaluated as ○, and the case of less than 90% was evaluated as ×. The evaluation results are shown in the “Cleavage” column of Table 1.

  In addition, the area of the part where the die bond film is lifted from the dicing tape in the state where the expansion is released (the ratio of the area of the semiconductor chip with the floating die bond film when the total area of the die bond film is 100%) is measured with a microscope. The case where the floating area was less than 30% was evaluated as ◯, and the case where it was 30% or more was evaluated as x. The evaluation results are shown in the column of “Float during cool expansion” in Table 1.

(Float during normal temperature expansion)
After evaluation of the above-mentioned floating at the time of the cool expand, a die separator (trade name “DDS2300”, manufactured by DISCO Corporation) is used and the heat expander unit is used at room temperature, an expansion speed of 1 mm / second, and an expand amount of 7 mm. Expanding was performed. Then, while maintaining the expanded state, the dicing tape was thermally contracted on the outer peripheral portion of the semiconductor chip at a heat temperature of 200 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 5 ° / sec. Then, the area of the part where the die bond film in that state is floating from the dicing tape (the ratio of the area of the floating semiconductor chip with the die bond film when the entire area of the die bond film is 100%) is observed with a microscope, The case where the floating area was less than 30% was evaluated as ◯, and the case where it was 30% or more was evaluated as ×. The evaluation results are shown in the column of “Float during normal temperature expansion” in Table 1.

(Floating over time after normal temperature expansion)
When the dicing tape is thermally shrunk in the evaluation at the time of the above room temperature expansion, the area of the part where the die bond film is lifted from the dicing tape after 3 hours has passed (with the die bond film floating when the area of the entire die bond film is 100%) The ratio of the area of the semiconductor chip) was observed with a microscope, and the case where the floating area was less than 30% was evaluated as ◯, and the case where it was 30% or more was evaluated as ×. The evaluation results are shown in the column “Floating over time” in Table 1.

(Pickup aptitude)
After evaluating the floating at the time of normal temperature expansion, the product name “Die Bonder SPA-300” (manufactured by Shinkawa Co., Ltd.) was used, the push-up speed was 1 mm / second, the push-up amount was 500 μm, the number of pins was 50, and 50 An attempt was made to pick up a semiconductor chip with a die bond film. A case where all 50 pieces could be picked up was evaluated as ◯, and a case where even one piece could not be picked up or a case where floating had already occurred was evaluated as x. The evaluation results are shown in the “pickup suitability” column of Table 1.

(Die bond suitability)
Using “Die Bonder SPA-300” (manufactured by Shinkawa Co., Ltd.), bonding to a 15 mm × 15 mm mirror chip under the conditions of a stage temperature of 120 ° C., a die bond load of 1000 gf, and a die bond time of 1 second, and floating at the four corners of the chip confirmed. The observation was performed using an ultrasonic imaging apparatus (trade name “FS200II”, manufactured by Hitachi Finetech Co., Ltd.). The area occupied by the float in the observed image was calculated using binarization software (WinRoof ver. 5.6). The case where the void occupied area was less than 5% with respect to the surface area of the adhesive sheet was determined as “◯”, and the case where it was 5% or more was determined as “x”. The evaluation results are shown in the column of “Die bond suitability” in Table 1.

(Applicability to wire bonding)
A wafer having a thickness of 30 μm was obtained by grinding a wafer having aluminum deposited on one side. The chip | tip with a die-bonding film was obtained by sticking the wafer for dicing on the dicing die-bonding film obtained by the Example and the comparative example, and then dicing to 10 square mm. The chip | tip with a die-bonding film was die-attached on the conditions of 120 degreeC, 0.1 MPa, and 1 second on Cu lead frame. Using a wire bonding apparatus (Maxum Plus manufactured by K & S), five Au wires having a wire diameter of 18 μm were bonded to one chip. An Au wire was struck onto a Cu lead frame under the conditions of an output of 80 Amp, a time of 10 ms, and a load of 50 g. An Au wire was struck onto the chip under the conditions of 150 ° C., output 125 Amp, time 10 ms, and load 80 g. The case where one or more of the five Au wires could not be bonded to the chip was determined as x, and the case where five of the five Au wires could be bonded to the chip was determined as ◯. The evaluation results are shown in the “wire bonding aptitude” column of Table 1.

(Reflow suitability)
A die-bonding film obtained in Examples and Comparative Examples was attached to a semiconductor element having a thickness of 9.5 mm × 9.5 mm and 200 μm at 70 ° C. and mounted on a lead frame at 120 ° C., 0.1 MPa for 1 second. Then, heat treatment was performed at 175 ° C. for 1 hour (pressure 7 kg / cm ² ) in a pressure dryer, and then a molding process using a sealing resin was performed. Thereafter, moisture absorption at 85 ° C./60% RH × 168 h was performed, and the sample was passed through an IR reflow furnace set at a temperature of 260 ° C. or higher to maintain this temperature for 30 seconds. Whether or not peeling occurred at the interface between the chip and the substrate with FS200II) manufactured by Finetech was observed for nine chips, and the probability that peeling occurred was calculated. Nine evaluations were performed, and a case where there was no peeling was marked as ◯, and a case where even one peeling was confirmed was marked as x. The evaluation results are shown in the “Reflow suitability” column of Table 1.

DESCRIPTION OF SYMBOLS 1 Dicing die-bonding film 10 Dicing tape 11 Base material 12 Adhesive layer 20, 21 Die-bonding film W, 30A Semiconductor wafer 30B Semiconductor wafer division body 30a Division groove 30b Modification area | region 31 Semiconductor chip

Claims (5)

A dicing tape having a base material and an adhesive layer laminated on the base material;
A die bond film laminated on the pressure-sensitive adhesive layer in the dicing tape,
The dicing die-bonding film whose storage elastic modulus E 'in 25 degreeC measured on the conditions of the frequency of 10 Hz of the said die-bonding film is 3-5 GPa.   The dicing die-bonding film according to claim 1, wherein the die-bonding film has a storage elastic modulus E ′ measured at a frequency of 10 Hz at −15 ° C. of 4 to 7 GPa.   After the thermosetting, the die bond film has a storage elastic modulus E ′ at 150 ° C. measured at a frequency of 10 Hz of 20 to 200 MPa and a storage elastic modulus E at 250 ° C. measured at a frequency of 10 Hz. The dicing die-bonding film according to claim 1, wherein the dicing die-bonding film indicates 20 to 200 MPa.   The dicing die-bonding film according to claim 1, wherein the die-bonding film has a storage elastic modulus G ′ at 130 ° C. measured at a frequency of 1 Hz of 0.03 to 0.7 MPa.   The dicing die-bonding film according to any one of claims 1 to 4, wherein the die-bonding film has a loss elastic modulus G ″ at 130 ° C. measured at a frequency of 1 Hz of 0.01 to 0.1 MPa.

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