JP5428758B2 - Semiconductor adhesive sheet, dicing tape integrated semiconductor adhesive sheet, and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor adhesive sheet, a dicing tape-integrated semiconductor adhesive sheet, and a semiconductor device.

  Conventionally, a silver paste has been mainly used as an adhesive for joining a semiconductor element and a semiconductor element mounting support member. However, with the recent miniaturization and high performance of semiconductor elements, the support members used are required to be small and fine. In response to these demands, silver paste addresses such demands by the occurrence of defects during wire bonding due to protrusions and inclination of semiconductor elements, difficulty in controlling the adhesive film thickness, and the occurrence of adhesive voids. I can't understand. Therefore, in recent years, sheet-like adhesives have been used in order to cope with the above requirements.

  This adhesive sheet is used in an individual sticking method or a wafer back surface sticking method. When manufacturing a semiconductor device using the former individual sticking method adhesive sheet, the reel-like adhesive sheet is cut or punched. After cutting into individual pieces, the separated adhesive sheet is adhered to a support member, and the semiconductor element separated by a dicing process is joined to the support member with the adhesive sheet to produce a support member with a semiconductor element. Thereafter, the semiconductor device is obtained through a wire bonding process, a sealing process, and the like as necessary.

  However, in order to use the adhesive sheet of the individual piece pasting method, a dedicated assembly device that cuts the adhesive sheet into individual pieces and adheres them to the support member is necessary, so that it is manufactured in comparison with the method using silver paste. There was a problem of high costs.

  On the other hand, when manufacturing a semiconductor device using the latter wafer back surface bonding method adhesive sheet, first paste the adhesive sheet on the back surface of the semiconductor wafer, and further bond the dicing tape to the other surface of the adhesive sheet, and then from the wafer A semiconductor device is obtained by dividing a semiconductor element into individual pieces by dicing, picking up the separated semiconductor element with an adhesive sheet, bonding it to a support member, and performing processes such as heating, curing, wire bonding, and sealing. It is done.

  This wafer back surface bonding type adhesive sheet joins the semiconductor element with the adhesive sheet to the support member, so it does not require an apparatus for separating the adhesive sheet, and the conventional silver paste assembling apparatus is used as it is or with a hot platen. It can be used by modifying a part of the device such as adding. For this reason, it has been attracting attention as a method in which the production cost can be kept relatively low among the methods using an adhesive sheet.

  In the method using the adhesive sheet of the wafer back surface bonding method, it is necessary to cut the adhesive sheet during the wafer dicing process. In addition to the conventional contact type cutting method using a diamond blade, A method of cutting an adhesive sheet at the same time when a wafer is irradiated with a laser to selectively form a modified portion inside the wafer and then expanding to cut the wafer along the modified portion. There is a method of cutting an adhesive sheet along a wafer cutting line by attaching an adhesive sheet to the substrate and then expanding the sheet (for example, see Patent Document 1). However, in any of the methods, since two types of materials having different hardnesses of a hard wafer made of an inorganic material and a soft adhesive sheet made of an organic material are cut in the same process, the organic adhesive sheet is made of an inorganic material to improve the cutting performance. It is effective to add a filler.

  In addition, reliability is one of the most important characteristics as a mounting board on which various electronic components such as semiconductor elements are mounted. Among them, the connection reliability against thermal fatigue is a very important item because it is directly related to the reliability of the equipment using the mounting substrate. As a cause of lowering the connection reliability, there is a thermal stress generated by using various materials having different thermal expansion coefficients. While the thermal expansion coefficient of the semiconductor element is as small as about 4 ppm / ° C., the thermal expansion coefficient of the wiring board on which the electronic component is mounted is as large as 15 ppm / ° C. or more. Thermal stress is generated by strain, and this thermal stress reduces connection reliability. In order to ensure excellent connection reliability, it is a problem to relieve thermal stress.

  Further, such a wiring board usually has unevenness due to wiring on the surface of the substrate, and the adhesive sheet needs to bury the unevenness of this wiring board. From the viewpoint of the above-described thermal stress relaxation property and wiring board unevenness embedding property, it is desirable that the adhesive sheet for semiconductor has a low storage elastic modulus after curing, but when an inorganic filler is added to improve the cutting property of the adhesive sheet, In general, it has been found that the adhesive sheet is highly elastic. As described above, the connection reliability of the semiconductor package, the unevenness embedding property of the wiring board of the adhesive sheet, and the cutting property of the adhesive sheet are in a trade-off relationship, and the compatibility of these performances is a problem.

  In addition, the conventional adhesive sheet has insufficient adhesive force in a short time, and therefore, after the semiconductor element to which the adhesive sheet is attached is thermocompression bonded to the mounting substrate or the wafer, the semiconductor element is attached while being conveyed. There is a high possibility that a problem arises in that a deviation occurs from the attached position or a foreign matter enters between the mounting substrate and the adhesive sheet during molding. Furthermore, in the conventional adhesive sheet, a method for increasing the storage elastic modulus before curing of the adhesive sheet by adding a filler has been proposed in order to enable individualization of the adhesive sheet by expanding. The storage elastic modulus at a high temperature of the substrate became high, the embedding property of the unevenness of the wiring board was lowered, and it could not be balanced with other characteristics. Furthermore, when the filler became a foreign substance and the adhesive sheet was thinned to 20 μm or less, it was difficult to obtain a better appearance.

JP 2006-093213 A

  The present invention is an adhesive sheet for semiconductors that can express sufficient adhesive force in a short time and is excellent in singulation by expanding and embedding unevenness of a wiring board during molding, and a dicing tape integrated type using this adhesive sheet for semiconductors An object is to provide an adhesive sheet for a semiconductor and a semiconductor device.

  The present invention is (1) an adhesive sheet for a semiconductor having an adhesive layer, and the cured adhesive layer has a storage elastic modulus at 150 ° C. measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring device. Is an adhesive sheet for semiconductor, characterized by having a storage elastic modulus at 170 ° C. of less than 5 MPa.

  In the present invention, (2) the die shear strength at 170 ° C. of the cured adhesive layer after thermobonding the adhesive layer to a silicon wafer and curing at 150 ° C. for 2 minutes is 0.1 MPa or more. (1) It is related with the adhesive sheet for semiconductors of description.

  Moreover, this invention relates to the adhesive sheet for semiconductors of the said (1) or (2) description whose thickness of the said adhesive bond layer is 1-20 micrometers (1).

  The present invention also relates to (4) the adhesive sheet for a semiconductor according to any one of (1) to (3), wherein the adhesive layer contains a high molecular weight component.

  The present invention also relates to (5) the adhesive sheet for semiconductor according to (4), wherein the high molecular weight component has a glass transition temperature of −10 to 60 ° C. and a weight average molecular weight of 20,000 to 1,000,000. .

  Moreover, this invention is (6) The semiconductor of the said (4) or (5) description whose content of the said high molecular weight component is 40-95 mass% of the total mass of the adhesive composition which comprises an adhesive bond layer. It relates to an adhesive sheet.

  The present invention also relates to (7) the adhesive sheet for a semiconductor according to any one of (1) to (6), wherein the adhesive layer does not contain a filler.

  Moreover, this invention relates to the adhesive sheet for semiconductors as described in any one of said (1)-(7) in which the said adhesive bond layer contains a low molecular-weight component (8).

  The present invention also relates to (9) the adhesive sheet for semiconductor according to (8), wherein the low molecular weight component has a weight average molecular weight of 10000 to 100,000.

  The present invention also relates to (10) a dicing tape integrated semiconductor adhesive sheet obtained by integrating the semiconductor adhesive sheet according to any one of (1) to (9) and a dicing tape.

  The dicing according to (10), wherein (11) the dicing tape has a tensile load of 40 kg or more, a 5% elongation elastic modulus of 3 MPa or more, and has no yield point during tensile deformation. The present invention relates to an adhesive sheet for a tape-integrated semiconductor.

  In addition, the present invention provides (12) a semiconductor device having a structure in which a semiconductor element and a support member are bonded using the adhesive sheet for semiconductor according to any one of (1) to (9). About.

  According to the present invention, by controlling the elastic modulus after curing of the adhesive layer, a sufficient adhesive force can be expressed in a short time, and the adhesive sheet for a semiconductor excellent in the unevenness embedding property of the wiring board at the time of molding, A dicing tape-integrated adhesive sheet for semiconductors and a semiconductor device using the adhesive sheet for semiconductors can be provided.

  The adhesive sheet for semiconductor of the present invention is an adhesive sheet for semiconductor having an adhesive layer, and the adhesive layer after curing is stored at 150 ° C. measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring device. The elastic modulus is 6 MPa or more, and the storage elastic modulus at 170 ° C. is less than 5 MPa.

  The adhesive layer constituting the adhesive sheet for semiconductor of the present invention has a storage elastic modulus at 150 ° C. measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring device in a C-stage state after curing, of 6 MPa or more, Thereby, sufficient adhesive force can be expressed in a short time. When the storage elastic modulus is 6 MPa, sufficient adhesive force cannot be exhibited in a short time, and when wire bonding is performed at 150 ° C., the strength becomes insufficient.

  The adhesive layer constituting the adhesive sheet for semiconductor of the present invention has a storage elastic modulus at 170 ° C. of less than 5 MPa measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring device in a C-stage state after curing. In this way, the embedding property of the wiring board is improved. The storage elastic modulus at 170 ° C. is preferably 1 to 4 MPa, more preferably 2 to 4 MPa. When the storage elastic modulus is 5 MPa or more, the embedding property of the unevenness of the wiring board is lowered and the object of the present invention cannot be achieved. On the other hand, when the storage elastic modulus is less than 1 MPa, the adhesive sheet may protrude. .

  In the adhesive sheet for semiconductor of the present invention, the cured elastic adhesive layer has a storage elastic modulus at 150 ° C. of 6 MPa or more and a storage elastic modulus at 170 ° C. of less than 5 MPa. It is preferable that it is 5 mass% or less of the total mass of an agent composition, and it is more preferable not to contain a filler. If the filler content exceeds 5% by mass, the storage elastic modulus at 170 ° C. becomes high, and the uneven embedding property of the wiring board may be lowered.

  The storage elastic modulus of the cured adhesive layer was determined by curing the adhesive layer at 170 ° C. for 3 hours, and then using a dynamic viscoelasticity measuring device (trade name DVE-V4, manufactured by Rheology). The layered product can be measured in a temperature-dependent measurement mode in which a tensile load is applied to the layered product and the frequency is measured from −50 to 300 ° C. at a frequency of 10 Hz and a heating rate of 3 to 10 ° C./min.

  The adhesive sheet for semiconductors of the present invention has a die shear strength at 170 ° C. of the cured adhesive layer after thermocompression bonding of the adhesive layer to a silicon wafer and curing at 150 ° C. for 2 minutes from the viewpoint of increasing the initial adhesive force. It is preferably 0.1 MPa or more. When the die shear strength is less than 0.1 MPa, foreign matter may be mixed between the silicon wafer and the adhesive sheet during molding.

  The die shear strength is determined by adhering the adhesive layer surface of the adhesive sheet to a silicon wafer at 70 ° C., pressing the adhesive layer to the silicon wafer under the conditions of pressure 0.4 MPa, time 1.5 seconds, temperature 150, at 150 ° C. It can be cured for 2 hours to prepare a cured adhesive sample, and can be measured at a measurement temperature of 170 ° C. using a universal bond tester (manufactured by Dage).

  Moreover, the adhesive sheet for semiconductor of the present invention is bonded to the organic substrate and cured at 70 ° C. for 3 hours, and then moisture-absorbed under the conditions of 85 ° C., relative humidity 85%, holding time 48 hours, The ratio of the die shear strength at 265 ° C. of the cured adhesive layer to the organic substrate before and after the treatment (die shear strength after moisture absorption treatment / die shear strength before moisture absorption treatment) is preferably 0.7 or more. When the die shear strength ratio is less than 0.7, solder reflow resistance is poor, and peeling may occur between the adhesive layer and the substrate. The die shear strength is an index of adhesive strength, and the larger the die shear strength ratio, the better the solder reflow resistance and the higher the reliability.

  The die shear strength ratio can be obtained as follows. The adhesive layer surface of the adhesive sheet is affixed to a semiconductor element at a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min. After pressure bonding and curing at 170 ° C. for 3 hours, moisture absorption treatment was performed under the conditions of a temperature of 85 ° C., a relative humidity of 85%, and a holding time of 48 hours. The die shear strength after moisture absorption treatment is measured, and the die shear strength ratio is calculated.

  As a method of setting the die shear strength ratio to 0.7 or more, for example, a phenol resin having a water absorption of 2% by mass or less is used as a curing agent which is a component constituting the adhesive layer, and a blending amount of the curing accelerator is adjusted. To do.

  The adhesive sheet for semiconductor of the present invention has an adhesive layer, and may be a single layer structure having only an adhesive layer or a laminated structure with another member such as a support film.

  Hereinafter, the adhesive layer constituting the semiconductor adhesive sheet of the present invention will be described.

The adhesive layer in the adhesive sheet for semiconductor of the present invention is preferably composed of an adhesive composition and contains a high molecular weight component. The high molecular weight component preferably has a glass transition temperature (Tg) of −10 to 60 ° C. When the Tg is less than −10 ° C., the adhesive strength may be reduced, or the tackiness of the adhesive layer may be increased in a state before curing, and the handleability may be deteriorated. The flexibility of the sheet may be reduced. The weight average molecular weight of the high molecular weight component is preferably 20,000 to 1,000,000, more preferably 10 to 900,000, and most preferably 20 to 800,000. If the weight average molecular weight is less than 20,000, the sheet strength may decrease, the flexibility may decrease, and the tack may increase. There is a tendency for solubility to decrease and workability to deteriorate. In the present invention, the weight average molecular weight is a value measured by gel permeation chromatography and converted using a standard polystyrene calibration curve.
From the viewpoint of controlling the storage elastic modulus of the cured adhesive layer, the content of the high molecular weight component is preferably 40 to 95% by mass of the total mass of the adhesive composition constituting the adhesive layer, 45 More preferably, it is -70 mass%. When the content is less than 40% by mass, the storage elastic modulus at 170 ° C. of the cured adhesive layer tends to be high, and the uneven embedding property of the wiring board may be lowered. On the other hand, when the content is more than 95% by mass, the storage elastic modulus of the cured adhesive layer at 150 ° C. tends to be low, and sufficient adhesive force is hardly expressed in a short time. In such a case, the strength may be insufficient and the reliability may be reduced.

  The high molecular weight component used in the present invention is preferably a thermoplastic resin, and examples thereof include a polyamide resin, a polyimide resin, a polyamideimide resin, and an acrylic copolymer. Among these, a high molecular weight component having a functional group that is incompatible with the epoxy resin and having a weight average molecular weight of 500,000 or more is preferable. Even if the functional group is present in the polymer chain, it is present at the end of the polymer chain. You may have. Examples of the functional group include an epoxy group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanate group, an amino group, and an amide group. Among these, a high molecular weight component having an epoxy group is preferable, for example, an epoxy group containing a weight average molecular weight of 500,000 or more obtained by polymerizing a monomer containing a functional monomer such as glycidyl (meth) acrylate. A (meth) acrylic copolymer or the like is preferable.

  Examples of the epoxy group-containing (meth) acrylic copolymer include an epoxy group-containing (meth) acrylic ester copolymer and an epoxy group-containing acrylic rubber, and it is more preferable to use an epoxy group-containing acrylic rubber. The acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like. The amount of the epoxy group-containing monomer in the epoxy group-containing (meth) acrylic copolymer is preferably 0.5 to 6.0% by mass. When the amount of the epoxy group-containing monomer is 0.5 to 6.0% by mass, the adhesive force of the adhesive sheet is easily secured and gelation is easily prevented. The epoxy group-containing (meth) acrylic copolymer having a weight average molecular weight of 0.5 to 6.0% by mass of glycidyl (meth) acrylate and having a weight average molecular weight of 500,000 or more is not particularly limited. A product name, HTR-860P-3DR, etc. made from Corporation | KK can be used.

  When the functional group monomer is carboxylic acid type acrylic acid or hydroxyl group type hydroxymethyl (meth) acrylate, the crosslinking reaction is likely to proceed, gelation in the varnish state, and increase in the degree of cure in the pre-curing state This is not preferable because there is a problem such as a decrease in adhesive strength due to.

  Moreover, the quantity of the glycidyl (meth) acrylate used as a functional group monomer shall be 2-6 mass% copolymer ratio. If it is 2% by mass or less, the adhesive force may be reduced, and if it is 6% by mass or more, gelation may occur. In addition, glycidyl (meth) acrylate means glycidyl acrylate, glycidyl methacrylate, and mixtures thereof.

  As the comonomer copolymerized with glycidyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate or a mixture of both can be used, but the mixing ratio is-when the glass transition temperature (Tg) of the copolymer is-. What is necessary is just to determine in consideration of becoming the range of 10-60 degreeC. The polymerization method is not particularly limited, and pearl polymerization, solution polymerization and the like can be used.

  The adhesive composition constituting the adhesive layer in the semiconductor adhesive sheet of the present invention preferably contains a low molecular weight component. The weight average molecular weight of the low molecular weight component is not particularly limited, but is preferably from 10,000 to 100,000, more preferably from 20,000 to 10,000, and from 30,000 to 0.00. More preferably, it is 50,000. If the weight average molecular weight is less than 10,000, it is often a low-viscosity liquid, which may reduce the breakability of the adhesive sheet. On the other hand, if it exceeds 100,000, there is a possibility that the breakability of the adhesive sheet is lowered due to the entanglement of molecules between the resins as the molecular weight increases.

  The low molecular weight component used in the present invention preferably contains a thermosetting resin in order to give good adhesion, for example, epoxy resin, cyanate resin, bismaleimide resin, phenol resin, urea resin, melamine resin. , Alkyd resin, acrylic resin, unsaturated polyester resin, diaryl phthalate resin, silicone resin, resorcinol formaldehyde resin, xylene resin, furan resin, polyurethane resin, ketone resin, triaryl cyanurate resin, polyisocyanate resin, tris (2-hydroxy Examples thereof include resins containing ethyl) isocyanurate, resins containing triaryl trimellitate, resins synthesized from cyclopentadiene, thermosetting resins by trimerization of aromatic dicyanamide, and the like. Among these, an epoxy resin, a cyanate resin, and a bismaleimide resin are preferable, and an epoxy resin is more preferable because an excellent adhesive force can be given at a high temperature. In addition, these thermosetting resins can be used individually or in combination of 2 or more types.

  As the epoxy resin, those having a softening point of 50 ° C. or higher measured by a ring and ball type are preferable. For example, product names Epicoat 1001, 1002, 1003, 1055, 1004, 1004AF, 1007, manufactured by Yuka Shell Epoxy Co., Ltd. 1009, 1003F, 1004F, manufactured by Dow Chemical Japan Co., Ltd. E. R. 661, 662, 663U, 664, 664U, 667, 642U, 672U, 673MF, 668, 669 and other bisphenol A type epoxy resins, manufactured by Tohto Kasei Co., Ltd., bisphenol F type epoxy resins such as YDF-2004, Japan Made by Kayaku Co., Ltd., phenol novolac type epoxy resin such as trade name EPPN-201, manufactured by Yuka Shell Epoxy Co., Ltd., trade name Epicoat 180S65, manufactured by Ciba Specialty Chemicals, trade name Araldite ECN1273, 1280, 1299, Product name YDCN-701, 702, 703, 704, Nippon Kayaku Co., Ltd., product name EOCN-1020, 102S, 103S, 104S, Sumitomo Chemical Co., Ltd., product name ESCN Cresol novolacs such as -195X, 200L, 220 Poxy resin, manufactured by Yuka Shell Epoxy Co., Ltd., trade names Epon 1031S, Epicoat 1032H60, 157S70, Nippon Kayaku Co., Ltd., trade names EPPN501H, 502H, etc., polyfunctional epoxy resins, manufactured by Ciba Specialty Chemicals Examples thereof include, but are not limited to, hetero ring-containing epoxy resins such as Araldite PT810.

  The adhesive composition constituting the adhesive layer in the semiconductor adhesive sheet of the present invention may contain a curing agent or a curing accelerator for the purpose of increasing the curability of the thermosetting resin. Examples of the curing agent include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols having two or more phenolic hydroxyl groups in one molecule such as bisphenol A, bisphenol F, and bisphenol S, and phenols. Examples thereof include phenolic resins such as novolak resin, bisphenol A novolak resin, and cresol novolak resin. In the present invention, from the viewpoint of adhesive strength after moisture absorption, a phenol resin is preferable, and a thermogravimetric analyzer has a water absorption rate of 2% by mass or less after being placed in a thermostatic chamber at a temperature of 85 ° C. and a relative humidity of 85% for 48 hours. A heating mass reduction rate (temperature increase rate: 5 ° C./min, atmosphere: nitrogen) at 350 ° C. measured by (TGA) is more preferably less than 5% by mass. Such a phenolic resin is obtained by reacting a phenolic compound and a xylylene compound that is a divalent linking group in the presence of a non-catalyst or an acid catalyst. There are trade names such as Milex XLC-series and XL series.

  The curing accelerator is not particularly limited, and for example, quaternary phosphonium salts, quaternary ammonium salts, imidazoles, DBU fatty acid salts, metal chelates, metal salts, triphenylphosphine and the like can be used. These may be used alone or in combination of two or more. Among these curing accelerators, imidazoles are preferable, and specific examples thereof include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazo. Examples include lithium trimellitate, and these may be used alone or in combination of two or more.

  It is preferable that content of a hardening accelerator is 0.003-5 mass parts with respect to 100 mass parts of total mass with a thermosetting resin and a hardening | curing agent, and it is 0.005-3 mass parts. More preferred. When the content is less than 0.003 parts by mass, the curability tends to be inferior, and when it exceeds 5 parts by mass, the storage stability tends to decrease.

  The adhesive composition constituting the adhesive layer in the semiconductor adhesive sheet of the present invention can also contain various coupling agents in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and silane-based coupling agents are most preferable.

  There is no restriction | limiting in particular as a silane coupling agent, For example, vinyl silanes, such as vinyltrichlorosilane, vinyltris ((beta) -methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane, (gamma) -methacryloxypropyl trimethoxysilane , Γ-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyl-trimethoxysilane, methacryloylsilanes such as methyltri (methacryloyloxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- Contains epoxy groups such as glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, methyltri (glycidyloxy) silane Orchids, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltri Methoxysilane, 3-aminopropylmethyldiethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyl-tris (2-methoxy-ethoxy-ethoxy) silane, N-methyl-3-aminopropyltrimethoxysilane, tri Aminosilanes such as aminopropyl-trimethoxysilane, 3,4,5-dihydroimidazol-1-yl-propyltrimethoxysilane, amyltrichlorosilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, 3 -Merca Mercaptosilanes such as topropyl-methyldimethoxysilane, urea bond-containing silanes such as 3-ureidopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, trimethylsilyl isocyanate, dimethylsilyl isocyanate, methylsilyl triisocyanate, vinylsilyl triisocyanate Isocyanate group-containing silanes such as phenylsilyl triisocyanate, tetraisocyanate silane, ethoxysilane isocyanate, 3-chloropropyl-methyldimethoxysilane, 3-chloropropyl-dimethoxysilane, 3-cyanopropyl-triethoxysilane, hexamethyldi Silazane, N, O-bis (trimethylsilyl) acetamide, methyltrimethoxysilane, methyltriethoxysilane, ethyltri Chlorosilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, N-β (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane, octadecyl Dimethyl [3- (trimethoxysilyl) propyl] ammonium chloride, γ-chloropropylmethyldichlorosilane, γ-chloropropylmethyldimethoxysilane, γ-chloropropylmethyldiethoxysilane, etc. can be used, and one of these Or 2 or more types can also be used together.

  It is preferable that content of the said coupling agent is 0.1-10 mass parts with respect to 100 mass parts of total mass of an adhesive composition from the effect, heat resistance, and cost.

  Furthermore, an ion scavenger may be added to the adhesive composition constituting the adhesive layer in the semiconductor adhesive sheet of the present invention in order to adsorb ionic impurities and improve insulation reliability during moisture absorption. it can. As the ion scavenger, there is no particular limitation, and a compound known as a copper damage preventive agent to prevent copper from ionizing and dissolving, for example, a triazine thiol compound, a bisphenol-based reducing agent, etc. can be used. Further, inorganic ion adsorbents such as zirconium compounds, antimony bismuth compounds, magnesium aluminum compounds and the like can be used.

  The content of the ion scavenger is preferably 1 to 10 parts by mass with respect to 100 parts by mass of the total mass of the adhesive composition, from the effect of addition, heat resistance, cost, and the like.

  From the viewpoint of controlling the storage elastic modulus of the adhesive layer after the curing, the adhesive composition constituting the adhesive layer in the adhesive sheet for semiconductor of the present invention has a filler content of the adhesive composition. It is preferable that it is 5 mass% or less of the total mass, and it is more preferable not to contain a filler from a viewpoint of making an adhesive sheet thinner. When the content of the filler exceeds 5% by mass, the storage elastic modulus at 170 ° C. may be increased, and the embedding property of the wiring board may be lowered. Also, when the adhesive sheet is a thin film of 10 μm or less. Appearance tends to be poor.

  The thickness of the adhesive layer in the adhesive sheet for semiconductor of the present invention is preferably 1 to 20 μm. If the thickness of the adhesive layer is less than 1 μm, the film formability tends to decrease, and if it exceeds 20 μm, the economy tends to be inferior.

  The adhesive sheet for semiconductors of the present invention can be obtained by dissolving or dispersing the adhesive composition in a solvent to obtain a varnish, applying the coating composition on a support film, heating and removing the solvent.

  There is no restriction | limiting in particular as said support body film, Plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyimide film, can be used. If necessary, these plastic films may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, mold release treatment and the like. The support film can be peeled off at the time of use, and only the adhesive layer can be used, or the support film and the adhesive layer can be used in a laminated state, and the support film can be removed later.

  The solvent used for the preparation of the varnish is not limited as long as it can uniformly dissolve, knead or disperse each component, and a conventionally known one can be used, but considers volatility during film production. It is preferable to use a solvent having a relatively low boiling point such as methyl ethyl ketone, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, xylene, butyl cellosolve, methanol, ethanol, 2-methoxyethanol. For the purpose of improving the coating properties, a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone can be added.

  As a method for applying the varnish to the support film, a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. .

  Moreover, in order to obtain desired thickness, the adhesive layer in the adhesive sheet for semiconductor of the present invention can be bonded two or more. In this case, it is necessary to have a bonding condition that does not cause peeling between the adhesive layers.

Moreover, the adhesive sheet for semiconductors of the present invention can also be used as a dicing tape-integrated adhesive sheet obtained by pasting and integrating with a dicing tape in advance. In this case, it is possible to increase the efficiency of the operation in that the laminating process on the wafer is performed only once. The dicing tape-integrated adhesive sheet can be obtained by laminating the adhesive layer surface of the semiconductor adhesive sheet on the adhesive layer surface of the dicing tape.
Examples of the dicing tape used in the present invention include a plastic film such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. These can also be used in a multilayer structure with other materials. In addition, these dicing tapes may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary. The dicing tape needs to have adhesiveness, and an adhesive layer may be provided on one side of the dicing tape. This can be formed by applying and drying a resin composition having an appropriate tack strength obtained by adjusting the ratio of the liquid component and the Tg of the high molecular weight component in the resin composition of the pressure-sensitive adhesive layer.

  Also, when the dicing tape integrated adhesive sheet is used when manufacturing a semiconductor device, it has an adhesive force that prevents the semiconductor element from scattering during dicing, and then peels off the dicing tape when picking up the semiconductor element with the adhesive sheet for semiconductor. It is necessary to. For example, when the adhesive strength of a semiconductor adhesive sheet or dicing tape is too high and the peel strength when the two are bonded is more than 150 N / m, it becomes difficult to peel the semiconductor element with the semiconductor adhesive sheet from the dicing tape. Sometimes. Therefore, the peel strength is preferably 150 N / m or less, and more preferably 50 N / m or less.

  Therefore, it is preferable to appropriately adjust the tack strength of the adhesive sheet for semiconductor. As the method, the adhesive strength and tack strength are also increased by increasing the fluidity of the adhesive sheet for semiconductor at room temperature (25 ° C.). There is a tendency to use the fact that if the fluidity is lowered, the adhesive strength and tack strength tend to be lowered. For example, when increasing the fluidity, there are methods such as increasing the content of a plasticizer and increasing the content of a tackifier. Conversely, when the fluidity is lowered, the content of the compound may be reduced. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy-based diluents.

  As a method of laminating a semiconductor adhesive sheet on a dicing tape, in addition to printing, a semiconductor adhesive sheet prepared in advance is pressed on a dicing tape, and a hot roll laminating method can be used. A hot roll laminating method is preferable in terms of good points.

  The thickness of the dicing tape is not particularly limited, and is appropriately determined based on the knowledge of those skilled in the art depending on the thickness of the adhesive sheet for semiconductors and the application of the dicing tape-integrated adhesive sheet. It is preferably 60 to 200 μm and more preferably 70 to 180 μm in terms of good handleability.

  The dicing tape has a tensile load of 40 kg or more, a 5% elongation elastic modulus of 3 MPa or more, and has a yield point during tensile deformation in order to easily divide the adhesive sheet for semiconductor of the present invention and improve the cutting performance. It is preferable not to. When either one of the tensile load and 5% elongation elastic modulus falls below the above value, the dicing tape becomes soft, so when used as a dicing tape integrated adhesive sheet, sufficient tensile force cannot be obtained during expansion. There is a tendency that the semiconductor adhesive sheet is difficult to be separated. A more preferable value of the tensile load is 50 kg or more, a more preferable value of the 5% elongation elastic modulus is 5 MPa or more, and the upper limit of the tensile load and the 5% elongation elastic modulus depends on the expanding device. It is not limited as.

  The tensile load of the dicing tape is about 10 mm wide x 30 mm long dicing tape using a universal testing machine (Orientec Co., Ltd., Tensilon UCT-5T type) at a temperature of 25 ° C. and a tensile speed of 5 mm / min. A tensile test was performed under the conditions, and the stress until the dicing tape broke was defined as the tensile load.

  The dicing tape has a 5% elongation elastic modulus of about 10 mm wide × 30 mm long dicing tape using a universal testing machine (Orientec Co., Ltd., Tensilon UCT-5T type) at a temperature of 25 ° C. and a tensile speed of 5 mm. A tensile test was performed under the conditions of / min, and among the Young's moduli calculated from the relationship between the elongation and the stress, the one obtained when the relative elongation was 5% was defined as the 5% elongation elastic modulus.

When the dicing tape has a yield point at the time of tensile deformation, only the stress concentration portion extends at the time of expansion, and it tends to be difficult to singulate the adhesive sheet for semiconductor. Here, “yield” means that when the stress acting on the object exceeds the elastic limit as seen in the load-elongation diagram, stress-strain diagram, etc., the deformation progresses gradually even though there is no increase in load or stress. The “yield point” refers to a point at the maximum load and maximum stress value of the elastic behavior. A dicing tape having a yield point is a strip-shaped dicing tape having a width of 10 mm and a length of 30 mm, using a universal testing machine (manufactured by Orientec Co., Ltd., Tensilon UCT-5T type) at a temperature of 25 ° C. and a tensile speed of 5 mm / When the tensile test is performed under the conditions of minutes and the stress and strain until the dicing tape breaks are measured, and the strain is plotted on the X axis and the stress is plotted on the Y axis, the slope dY / dX is 0 or less from a positive value. It takes a stress value that changes to a negative value. That is, the dicing tape having no yield point does not take a stress value at which the inclination dY / dX changes from a positive value to 0 or a negative value. When dicing tape with a yield point is used, when external force is applied to the dicing tape to cut the semiconductor wafer and semiconductor adhesive sheet, no stress is applied to the semiconductor wafer and semiconductor adhesive sheet, and only the peripheral dicing tape is used. Since the film stretches and deforms, the semiconductor wafer and the adhesive sheet for semiconductor may not be cut or a cutting residue may occur. On the other hand, by using a dicing tape that does not have a yield point, stress is easily applied to the semiconductor wafer and the adhesive sheet for semiconductor, and can be easily separated into pieces, thereby improving breakability. Can be cut at the same time. In particular, when the semiconductor wafer and the adhesive sheet for a semiconductor are cut by a so-called expand by uniformly expanding the dicing tape by radially extending the dicing tape, the dicing tape is uniformly extended, so that the breakability is improved. Furthermore, when a thin semiconductor wafer, for example, a semiconductor wafer having a thickness of 100 μm or less is used, the semiconductor wafer is separated by stealth dicing or half-cut dicing to reduce defects such as chipping and then bonded to the semiconductor wafer by expanding. It is preferable to divide the sheet and cut it, but it is preferable to use a dicing tape having no yield point at this time because the semiconductor wafer and the adhesive sheet for semiconductor can be cut at the same time.
The semiconductor device of the present invention has a structure in which a semiconductor element and a support member are bonded using a semiconductor adhesive sheet. The supporting member can be used without being limited to a substrate material such as a lead frame having a die pad, a ceramic substrate or an organic substrate. As the ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used. As an organic substrate, an FR-4 substrate in which an epoxy resin is impregnated in a glass cloth, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate using a polyimide film as a base material, or the like is used. Can do. Furthermore, a wiring may be formed as the support member. When the wiring appears on the outer surface of the semiconductor device, it is preferable to provide a protective resin layer. The wiring structure may be a single-sided wiring, double-sided wiring, or multilayer wiring structure, and may be provided with through-holes and non-through-holes that are electrically connected as necessary.

  As a method for attaching the semiconductor adhesive sheet to the support member, a method in which the semiconductor adhesive sheet is cut into a predetermined shape and the cut semiconductor adhesive sheet is thermocompression-bonded to a desired position of the support member is generally used. There is, but is not limited to this.

  As the structure of the semiconductor device, the electrode of the semiconductor element and the support member are connected by wire bonding, and the electrode of the semiconductor element and the support member are connected by inner lead bonding of tape automated bonding (TAB). Although there are structures, etc., it is not limited to these, and any case is effective. As the semiconductor element, a general semiconductor element such as an IC, LSI, VLSI can be used. The thermal stress generated between the semiconductor element and the supporting member is significant when the area difference between the semiconductor element and the supporting member is small. However, the semiconductor device uses a low elastic modulus adhesive member to relieve the thermal stress and increase reliability. Ensure sex. These effects appear very effectively when the area of the semiconductor element is 70% or more of the area of the support member. In such a semiconductor device having a small area difference between the semiconductor element and the support member, the external connection terminals are often provided in an area.

  In addition, as a characteristic of the adhesive sheet for semiconductors of the present invention, in the process of heating such as a process of thermocompression bonding the adhesive sheet for semiconductors to a desired position of the support member or a process of connecting by wire bonding, from the adhesive layer Can suppress volatile matter.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.

Examples 1-2 and Comparative Examples 1-4
<Preparation of semiconductor adhesive sheet>
As a low molecular weight component, an epoxy resin (YDCN-703: product name manufactured by Tohto Kasei, cresol novolac type epoxy resin, epoxy equivalent 210), and as a curing agent, a phenol resin (Mirex XLC-LL: a product name manufactured by Mitsui Chemicals, Inc., phenol resin, Hydroxyl equivalent 175, water absorption 1.8% by mass, heating mass decrease rate at 350 ° C. 4% by mass), NUC A-189 (trade name, manufactured by Nihon Unicar Co., Ltd.) and NUC A-1160 (Nihon Unicar) as silane coupling agents As a filler, SO-C2 (Admatech Co., Ltd., silica, specific surface area 7 m ² / g, average particle size 0.4 to 0.6 μm) or Aerosil R972 (Nippon Aerosil Co., Ltd.) (Trade name, silica, average particle size 0.016 μm) Stirring and mixing added and further 90 min kneaded using a bead mill.

  Acrylic rubber (HTR-860P-3: trade name, manufactured by Nagase Chemtech Co., Ltd., weight average molecular weight 1 million) containing 2 to 6% by mass of glycidyl acrylate or glycidyl methacrylate as a high molecular weight component, and Curazole 2PZ- CN (trade name, 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Kasei Co., Ltd.) was mixed and stirred and vacuum degassed.

  The varnish was coated on a polyethylene terephthalate film having a thickness of 38 μm as a support film and dried by heating at 140 ° C. for 5 minutes to form an adhesive layer in a B stage state (before curing) with a film thickness of 20 μm. An adhesive sheet for semiconductor was formed, which was formed and provided with a support film. Table 1 shows the parts by mass of Examples 1-2 and Comparative Examples 1-4.

<Measurement of storage elastic modulus of adhesive sheet for semiconductor>
After thermosetting the adhesive layer of the adhesive sheet for semiconductor at 170 ° C. for 3 hours, using a dynamic viscoelasticity measuring device (trade name DVE-V4, manufactured by Rheology), the tensile load is applied to the cured adhesive layer. Then, the storage elastic modulus at 150 ° C. and 170 ° C. of the cured adhesive layer was measured in a temperature-dependent measurement mode in which the frequency was measured from 25 to 300 ° C. under conditions of a frequency of 10 Hz and a heating rate of 3 to 10 ° C./min. A storage elastic modulus at 150 ° C. of 6 MPa or more was indicated as “◯”, a storage elastic modulus at 170 ° C. of less than 5 MPa was indicated as “◯”, and a storage elastic modulus at 170 ° C. was indicated as “◯”. The results are shown in Table 1.

<Evaluation of adhesive sheet for semiconductor>
(1) Expand cutting property It attaches to a dynamic viscoelastic device, expands on conditions of 5 degreeC, frequency 500Hz, and displacement 95micrometer, and observes the cutting property of an adhesive sheet. When it was able to cut (break), it was set as “◯”, and when it could not be cut, it was set as “x”. The results are shown in Table 1.

(2) Measurement of adhesive strength in a short time The adhesive layer surface of an adhesive sheet for semiconductor (5 mm × 5 mm) was attached to a silicon wafer (5 mm × 5 mm) at 70 ° C., and the adhesive layer was pressure 0.04 MPa, time 1 .5 seconds and a temperature of 150 ° C., pressed onto a silicon wafer, cured on a 150 ° C. hot plate for 2 minutes, and then used an all-purpose bond tester (manufactured by Dage) to form an adhesive layer at a measurement temperature of 170 ° C. The die shear strength of the cured product was measured. When the die shear strength was 0.1 MPa or more, “◯” was given, and when the die shear strength was less than 0.1 MPa, “x” was given. The results are shown in Table 1.

(3) Measurement of die shear strength ratio Hot roll of adhesive layer surface of semiconductor adhesive sheet (5 mm x 5 mm) on semiconductor element (5 mm x 5 mm) under conditions of temperature 70 ° C, pressure 0.3 MPa and speed 0.3 m / min Bonding using a laminator, then pressure bonding to an organic substrate (a substrate coated with AUS308 on FR-4 impregnated with epoxy resin in a glass cloth) under conditions of pressure 0.1 MPa, time 5 seconds, temperature 120 ° C. After curing at 170 ° C. for 3 hours, the sample was moisture-absorbed under conditions of a temperature of 85 ° C. and a relative humidity of 85% under a holding time of 48 hours, and a measurement temperature of 265 ° C. using a universal bond tester (manufactured by Dage) The die shear strength before and after moisture absorption treatment was measured. A ratio of die shear strength (die shear strength after moisture absorption treatment / die shear strength before moisture absorption treatment) was calculated, and the ratio was 0.7 or more, and less than 0.7 was “x”. The results are shown in Table 1.

(4) Convex / concave embedding property of wiring board The adhesive layer surface of the adhesive sheet for semiconductor (10 mm × 10 mm) is applied to the semiconductor element (10 mm × 10 mm) under conditions of a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min. Bonding was performed using a hot roll laminator, and thereafter, bonding was performed on a wiring board having unevenness with a wiring step of 5 μm under the conditions of pressure 0.2 MPa, temperature 120 ° C. and time 2 seconds, and then cured at 170 ° C. for 30 minutes. Thereafter, resin sealing was performed to prepare an evaluation package. The embedding property of the wiring board was visually observed. When the embeddability was sufficient, “◯” was indicated, and when the embeddability was insufficient, “x” was indicated. The results are shown in Table 1.

(5) Thinning of the adhesive sheet for semiconductor The case where the adhesive sheet for semiconductor having a thickness of 1 μm was produced was designated as “◯”, and the case where the adhesive sheet was not produced was designated as “x”. The results are shown in Table 1.

The above evaluation results are summarized in Table 1.

  As shown in Table 1, in the adhesive sheets for semiconductors of Examples 1 and 2, the storage elastic modulus after curing of the adhesive layer satisfies the specified value, the adhesive force in a short time is high, and the cutting property is high. It was excellent in the unevenness embedding property and reliability of the wiring board. Also, it was possible to produce an adhesive sheet having a thickness of 1 μm.

  On the other hand, since Comparative Example 1 contains a large amount of a high molecular weight component with respect to the curing agent, the storage elastic modulus at 150 ° C. after curing is less than 6 MPa, the cutting property is inferior, and the bonding is performed in a short time. The result was also low. Moreover, since the filler was contained, an adhesive sheet having a thickness of 1 μm could not be produced.

  Since the comparative example 2 contained many fillers with respect to the high molecular weight component, the storage elastic modulus at 170 ° C. after curing of the adhesive layer was 5 MPa or more, and the uneven embedding property of the wiring board was inferior. Moreover, since the filler was contained, an adhesive sheet having a thickness of 1 μm could not be produced.

  Since the comparative example 3 had little high molecular weight component content with respect to the hardening | curing agent, the storage elastic modulus in 170 degreeC after hardening of an adhesive bond layer was 5 Mpa or more.

  In Comparative Example 4, since the content of the curing accelerator is small with respect to the curing agent, the storage elastic modulus at 150 ° C. after curing of the adhesive layer is less than 6 MPa, the adhesive force in a short time is low, and the reliability is also high. It was inferior.

<Production and evaluation of dicing tape integrated adhesive sheet>
The adhesive sheet for a semiconductor having a thickness of 20 μm prepared in Example 1 or 2 is laminated on the pressure-sensitive adhesive layer surface of various dicing tapes to produce a dicing tape integrated adhesive sheet, and the cutting properties of the adhesive sheet for semiconductors are as follows. evaluated.
A silicon wafer having a thickness of 50 μm was irradiated with laser light using a laser dicer “MAHOH DICING MACHINE” manufactured by Tokyo Seimitsu Co., Ltd. to form a modified region inside the silicon wafer. Next, lamination was performed at a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min by using a hot roll laminator so that the silicon wafer and the dicing tape integrated adhesive sheet were in contact with each other. A stainless steel ring was attached to the outer periphery of the dicing tape. Subsequently, the ring was fixed and the dicing tape was expanded by an expanding device to produce a chip. The expanding conditions were a temperature of 5 ° C. and an expanding speed of 200 mm / sec. At that time, the case where the silicon wafer and the semiconductor adhesive sheet were cut at the same time was evaluated as “◯” (good cutting property), and the case where the silicon wafer and the semiconductor adhesive sheet were not cut at the same time was evaluated as “x” (good cutting property). The results are shown in Table 2.

  Note that the tensile load, 5% elongation modulus, and yield point of the dicing tapes A to E used above were measured by the following methods.

[Measurement of tensile load]
The tensile load of the dicing tape is about 10 mm wide x 30 mm long dicing tape using a universal testing machine (Orientec Co., Ltd., Tensilon UCT-5T type) at a temperature of 25 ° C. and a tensile speed of 5 mm / min. A tensile test was performed under the conditions, and the stress until the dicing tape broke was defined as the tensile load.

[Measurement of 5% elongation modulus]
Using a universal testing machine (Orientec Co., Ltd., Tensilon UCT-5T type) for strip-shaped dicing tape with a width of 10 mm and a length of 30 mm, a tensile test is performed at a temperature of 25 ° C. and a tensile speed of 5 mm / min. Among the Young's moduli calculated from the relationship between elongation and stress, the one obtained when relatively 5% stretched was defined as 5% stretch modulus.

[Presence / absence of yield point of dicing tape]
Using a universal testing machine (Orientec Co., Ltd., Tensilon UCT-5T type) for strip-shaped dicing tape with a width of 10 mm and a length of 30 mm, a tensile test is performed at a temperature of 25 ° C. and a tensile speed of 5 mm / min. Measure the stress and strain until the dicing tape breaks, and when the strain is plotted on the X axis and the stress is plotted on the Y axis, the stress value at which the slope dY / dX changes from a positive value to 0 or a negative value What was taken was “with a yield point”, and those where the slope dY / dX did not take a stress value changing from a positive value to 0 or a negative value was taken as “no yield point”.

  As shown in Table 2, since the dicing tapes A and E have a tensile load of 40 kg or more, a 5% elongation elastic modulus of 3 MPa or more, and no yield point, the semiconductor adhesive sheet and the silicon wafer can be cut simultaneously. The cutting ability was excellent.

  Since the dicing tape B has a yield point, only the portion of the dicing tape in contact with the expanding device is stretched, the stress is not applied to the silicon wafer and the adhesive sheet for semiconductor, and good results cannot be obtained. . Since the dicing tape C had a tensile load of less than 40 kg, the dicing tape was soft and sufficient tensile force could not be obtained during expansion, and good results could not be obtained. Since the dicing tape D had a tensile load of less than 40 kg, the dicing tape was soft and sufficient tensile force could not be obtained during expansion, and good results were not obtained.

Claims (12)

An adhesive sheet for a semiconductor having an adhesive layer,
The cured adhesive layer has a storage elastic modulus at 150 ° C. measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring apparatus of 6 MPa or more and a storage elastic modulus at 170 ° C. of less than 5 MPa. A semiconductor adhesive sheet.   2. The adhesive sheet for semiconductor according to claim 1, wherein the adhesive layer cured product after thermobonding the adhesive layer to a silicon wafer and curing at 150 ° C. for 2 minutes has a die shear strength at 170 ° C. of 0.1 MPa or more.   The adhesive sheet for semiconductor according to claim 1, wherein the adhesive layer has a thickness of 1 to 20 μm.   The adhesive sheet for a semiconductor according to any one of claims 1 to 3, wherein the adhesive layer contains a high molecular weight component.   The adhesive sheet for semiconductor according to claim 4, wherein the high molecular weight component has a glass transition temperature of -10 to 60 ° C and a weight average molecular weight of 20,000 to 1,000,000.   The adhesive sheet for semiconductor according to claim 4 or 5, wherein the content of the high molecular weight component is 40 to 95% by mass of the total mass of the adhesive composition constituting the adhesive layer.   The said adhesive bond layer does not contain a filler, The adhesive sheet for semiconductors as described in any one of Claims 1-6 characterized by the above-mentioned.   The adhesive sheet for a semiconductor according to any one of claims 1 to 7, wherein the adhesive layer contains a low molecular weight component.   The adhesive sheet for semiconductor according to claim 8, wherein the low molecular weight component has a weight average molecular weight of 10,000 to 100,000.   A dicing tape-integrated adhesive sheet for semiconductors, wherein the semiconductor adhesive sheet according to any one of claims 1 to 9 and a dicing tape are integrated.   The dicing tape-integrated semiconductor adhesive sheet according to claim 10, wherein the dicing tape has a tensile load of 40 kg or more, a 5% elongation elastic modulus of 3 MPa or more, and has no yield point during tensile deformation.   The semiconductor device which has a structure which adhere | attached the semiconductor element and the supporting member using the adhesive sheet for semiconductors as described in any one of Claims 1-9.