JP5549106B2 - Semiconductor adhesive sheet and dicing integrated semiconductor adhesive sheet - Google Patents
Semiconductor adhesive sheet and dicing integrated semiconductor adhesive sheet Download PDFInfo
- Publication number
- JP5549106B2 JP5549106B2 JP2009100286A JP2009100286A JP5549106B2 JP 5549106 B2 JP5549106 B2 JP 5549106B2 JP 2009100286 A JP2009100286 A JP 2009100286A JP 2009100286 A JP2009100286 A JP 2009100286A JP 5549106 B2 JP5549106 B2 JP 5549106B2
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- adhesive sheet
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- adhesive
- semiconductor
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- 239000000853 adhesive Substances 0.000 title claims description 147
- 230000001070 adhesive effect Effects 0.000 title claims description 146
- 239000004065 semiconductor Substances 0.000 title claims description 81
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 34
- 238000010521 absorption reaction Methods 0.000 claims description 21
- 239000000945 filler Substances 0.000 claims description 20
- 239000003822 epoxy resin Substances 0.000 claims description 18
- 229920000647 polyepoxide Polymers 0.000 claims description 18
- 238000011282 treatment Methods 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 239000011164 primary particle Substances 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- 239000005011 phenolic resin Substances 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 125000003700 epoxy group Chemical group 0.000 claims description 5
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims description 5
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 claims description 5
- 229920006243 acrylic copolymer Polymers 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 229920005989 resin Polymers 0.000 description 24
- 239000011347 resin Substances 0.000 description 24
- -1 diaryl phthalate Chemical compound 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 239000002966 varnish Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229910002026 crystalline silica Inorganic materials 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 3
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000002516 radical scavenger Substances 0.000 description 3
- 238000000518 rheometry Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- KNTKCYKJRSMRMZ-UHFFFAOYSA-N 3-chloropropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCCl KNTKCYKJRSMRMZ-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000378 calcium silicate Substances 0.000 description 2
- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000391 magnesium silicate Substances 0.000 description 2
- 229910052919 magnesium silicate Inorganic materials 0.000 description 2
- 235000019792 magnesium silicate Nutrition 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- GVYLCNUFSHDAAW-UHFFFAOYSA-N mirex Chemical compound ClC12C(Cl)(Cl)C3(Cl)C4(Cl)C1(Cl)C1(Cl)C2(Cl)C3(Cl)C4(Cl)C1(Cl)Cl GVYLCNUFSHDAAW-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
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- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
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- CLYUOMVYYFJUBR-UHFFFAOYSA-N 2-[methyl-bis[2-(2-methylprop-2-enoyloxy)ethoxy]silyl]oxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCO[Si](C)(OCCOC(=O)C(C)=C)OCCOC(=O)C(C)=C CLYUOMVYYFJUBR-UHFFFAOYSA-N 0.000 description 1
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- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- HOZMLTCHTRHKRK-UHFFFAOYSA-N 2-methyl-1-silylprop-2-en-1-one Chemical class CC(=C)C([SiH3])=O HOZMLTCHTRHKRK-UHFFFAOYSA-N 0.000 description 1
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- GHWPPBZDJQYMDI-UHFFFAOYSA-N 3-[3-[benzyl(ethenyl)amino]propoxy-dimethoxysilyl]propan-1-amine Chemical compound NCCC[Si](OC)(OC)OCCCN(C=C)CC1=CC=CC=C1 GHWPPBZDJQYMDI-UHFFFAOYSA-N 0.000 description 1
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
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- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
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- PEEDYJQEMCKDDX-UHFFFAOYSA-N antimony bismuth Chemical compound [Sb].[Bi] PEEDYJQEMCKDDX-UHFFFAOYSA-N 0.000 description 1
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- 238000007611 bar coating method Methods 0.000 description 1
- KVBYPTUGEKVEIJ-UHFFFAOYSA-N benzene-1,3-diol;formaldehyde Chemical compound O=C.OC1=CC=CC(O)=C1 KVBYPTUGEKVEIJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
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- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
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- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Die Bonding (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
Description
本発明は、半導体用接着シート、及びダイシング一体型半導体用接着シートに関する。 The present invention relates to a semiconductor adhesive sheet and a dicing integrated semiconductor adhesive sheet.
従来、半導体素子と半導体素子搭載用支持部材の接合には銀ペーストが主に使用されていた。しかし、近年の半導体素子の小型化・高性能化に伴い、使用される支持部材にも小型化・細密化が要求されるようになってきている。こうした要求に対して、銀ペーストでは、はみ出しや半導体素子の傾きに起因するワイヤボンディング時における不具合の発生、接着シートの膜厚の制御困難性、および接着シートのボイド発生などにより前記要求に対処しきれなくなってきている。そのため、前記要求に対処するべく、近年、シート状の接着剤が使用されるようになってきた。 Conventionally, a silver paste has been mainly used for joining a semiconductor element and a semiconductor element mounting support member. However, with the recent miniaturization and high performance of semiconductor elements, the support members used are required to be small and fine. In response to these demands, silver paste addresses such demands by the occurrence of defects during wire bonding due to protrusions and inclination of semiconductor elements, difficulty in controlling the thickness of the adhesive sheet, and the occurrence of voids in the adhesive sheet. I can't understand. Therefore, in recent years, sheet-like adhesives have been used in order to cope with the above requirements.
この接着シートは、個片貼付け方式あるいはウェハ裏面貼付け方式において使用されているが、前者の個片貼付け方式の接着シートを用いて半導体装置を製造する場合、リール状の接着シートをカッティングあるいはパンチングによって個片に切り出した後その個片を支持部材に接着し前記接着シート付き支持部材にダイシング工程によって個片化された半導体素子を接合して半導体素子付き支持部材を作製し、その後、必要に応じてワイヤボンド工程、封止工程などを経ることによって半導体装置が得られることとなる。しかし、前記個片貼付け方式の接着シートを用いるためには、接着シートを切り出して支持部材に接着する専用の組立装置が必要であることから、銀ペーストを使用する方法に比べて製造コストが高くなるという問題があった。 This adhesive sheet is used in an individual sticking method or a wafer back surface sticking method. When manufacturing a semiconductor device using the former individual sticking method adhesive sheet, the reel-like adhesive sheet is cut or punched. After cutting into individual pieces, the individual pieces are bonded to a supporting member, and the semiconductor element separated by the dicing process is joined to the supporting member with the adhesive sheet to produce a supporting member with a semiconductor element, and then as necessary. Thus, a semiconductor device is obtained through a wire bonding process, a sealing process, and the like. However, in order to use the adhesive sheet of the piece pasting method, a dedicated assembly device that cuts out the adhesive sheet and adheres it to the support member is necessary, so that the manufacturing cost is higher than the method using silver paste. There was a problem of becoming.
一方、後者のウェハ裏面貼付け方式の接着シートを用いて半導体装置を製造する場合、まず半導体ウェハの裏面に接着シートを貼付けさらに接着シートの他面にダイシングテープを貼り合わせ、その後、前記ウェハからダイシングによって半導体素子を個片化し、個片化した接着シート付き半導体素子をピックアップしそれを支持部材に接合し、加熱、硬化、ワイヤボンドなどの工程を経ることにより半導体装置が得られることとなる。このウェハ裏面貼付け方式の接着シートは、接着シート付き半導体素子を支持部材に接合するため接着シートを個片化する装置を必要とせず、従来の銀ペースト用の組立装置をそのままあるいは熱盤を付加するなどの装置の一部を改良することにより使用できる。そのため、接着シートを用いた組立方法の中で製造コストが比較的安く抑えられる方法として注目されている。 On the other hand, when manufacturing a semiconductor device using the latter wafer back surface bonding type adhesive sheet, the adhesive sheet is first bonded to the back surface of the semiconductor wafer, and then the dicing tape is bonded to the other surface of the adhesive sheet, and then the wafer is diced. A semiconductor device is obtained by separating the semiconductor element into individual pieces, picking up the separated semiconductor element with an adhesive sheet, bonding it to a support member, and performing processes such as heating, curing, and wire bonding. This wafer back surface bonding type adhesive sheet does not require an apparatus for separating the adhesive sheet to join the semiconductor element with the adhesive sheet to the supporting member, and the conventional assembly apparatus for silver paste is added as it is or a heating plate is added. It can be used by improving a part of the apparatus such as. Therefore, it has been attracting attention as a method in which the manufacturing cost can be kept relatively low among the assembling methods using the adhesive sheet.
ウェハ裏面貼り付け方式の接着シートを用いる方法にあっては、ウェハのダイシング工程時に接着シートも切断することが必要である。これには従来のダイヤモンドブレードを用いて切断する接触型の切断方法に加え、ウェハにレーザを照射することによりウェハ内部に選択的に改質部を形成し、その後エキスパンドすることにより改質部に沿ってウェハを切断する時に同時に接着シートを切断する方法、または切断されたウェハに接着シートを貼り付け、その後エキスパンドすることによりウェハ切断ラインに沿って接着シートを切断する方法（例えば、特許文献１参照）がある。いずれも無機物で固いウェハと有機物で柔らかい接着シートの固さの異なる２種類の材料を同じ工程で切断するため、有機物である接着シートに無機フィラを添加することが有効である。 In the method using the wafer back surface bonding type adhesive sheet, it is necessary to cut the adhesive sheet during the wafer dicing step. For this purpose, in addition to the conventional cutting method using a diamond blade, a modified portion is selectively formed inside the wafer by irradiating the wafer with a laser, and then expanded to form a modified portion. A method of cutting the adhesive sheet simultaneously when cutting the wafer along the wafer, or a method of cutting the adhesive sheet along the wafer cutting line by attaching the adhesive sheet to the cut wafer and then expanding the wafer (for example, Patent Document 1) See). In any case, since two kinds of materials having different hardnesses of a hard wafer made of an inorganic material and a soft adhesive sheet made of an organic material are cut in the same process, it is effective to add an inorganic filler to the adhesive sheet made of an organic material.
また、半導体素子をはじめとする各種電子部品を搭載した実装基板として最も重要な特性の一つとして信頼性がある。その中でも、熱疲労に対する接続信頼性は実装基板を用いた機器の信頼性に直接関係するため非常に重要な項目である。この接続信頼性を低下させる原因として、熱膨張係数の異なる各種材料を用いていることから生じる熱応力が挙げられる。これは、半導体素子の熱膨張係数が約４ｐｐｍ／℃と小さいのに対し、電子部品を実装する配線基板の熱膨張係数が１５ｐｐｍ／℃以上と大きいことから熱衝撃に対して熱ひずみが発生し、その熱ひずみによって熱応力が発生するため、この応力緩和が課題である。また、このような配線基板は配線による凹凸を一般に有しており、この配線基板凹凸を埋込ことが必要である。上記の応力緩和性、基板凹凸埋込性の点から、半導体用接着シートが、硬化後の弾性率がある程度低いことが望ましいが、接着シートの切断性向上のため無機フィラを添加すると、一般的に接着シートが高弾性化することが分かっており、半導体パッケージの信頼性と接着シートの切断性の両立が課題となっている。 In addition, reliability is one of the most important characteristics as a mounting board on which various electronic components such as semiconductor elements are mounted. Among them, the connection reliability against thermal fatigue is a very important item because it is directly related to the reliability of the equipment using the mounting substrate. As a cause of lowering the connection reliability, there is a thermal stress generated by using various materials having different thermal expansion coefficients. This is because the thermal expansion coefficient of the semiconductor element is as small as about 4 ppm / ° C., whereas the thermal expansion coefficient of the wiring board on which the electronic component is mounted is as large as 15 ppm / ° C. or more. Since the thermal strain is generated by the thermal strain, this stress relaxation is a problem. Further, such a wiring board generally has unevenness due to wiring, and it is necessary to bury the unevenness of the wiring board. From the viewpoints of stress relaxation and embedding on the substrate, it is desirable that the adhesive sheet for semiconductors has a somewhat low elastic modulus after curing, but it is common to add an inorganic filler to improve the cutting property of the adhesive sheet. It has been found that the adhesive sheet is highly elastic, and there is a problem of compatibility between the reliability of the semiconductor package and the cutting property of the adhesive sheet.
エキスパンドによる個片化が可能であり、且つモールド時に基板凹凸への埋込性が優れるとともに吸湿後の耐半田リフロー性に優れる半導体用接着シートを提供することを目的とする。 An object of the present invention is to provide an adhesive sheet for a semiconductor that can be singulated by expanding, has excellent embedding properties in substrate irregularities at the time of molding, and has excellent solder reflow resistance after moisture absorption.
従来の接着シートでは、エキスパンドによる接着シートの個片化を可能にするため、硬化前の破断伸度を小さくすると、硬化後の高温弾性率が高くなり配線基板凹凸への埋込性が低下したが、本発明者らは、硬化前における０℃での破断伸度を小さく保ち、且つ硬化後の高温弾性率を低くでき、従来の課題を解決できることを見出した。 In the conventional adhesive sheet, in order to enable individualization of the adhesive sheet by expanding, when the breaking elongation before curing is reduced, the high temperature elastic modulus after curing is increased and the embedding in the wiring board unevenness is reduced. However, the present inventors have found that the elongation at break at 0 ° C. before curing can be kept small, the high-temperature elastic modulus after curing can be lowered, and the conventional problems can be solved.
本発明は、エキスパンドによる個片化が可能であり、且つモールド時に基板凹凸への埋込性が優れる、吸湿後の耐半田リフロー性に優れる耐半導体用接着シートを提供する。
すなわち、本発明は以下の記載事項に関する。
１． 接着剤層を有する半導体用接着シートにおいて、硬化前の前記接着シートが、動的粘弾性装置を使用し、５℃で、周波数５００Ｈｚ以下、変位９５μｍ以下の条件でエキスパンド試験を行った場合、破断が可能であることを特徴とする半導体用接着シート。
２． ワイヤボンディング時に１７５℃の熱履歴をかけた場合、その３時間後の１７５℃での貯蔵弾性率が１０ＭＰａ未満であり、２６５℃（耐半田リフロー温度）での貯蔵弾性率が５ＭＰａ未満であり、かつ、吸湿処理（１２１℃、２ａｔｍ、１００％ＲＨ、２０ｈ）前後の半導体パッケージ用基板に対する接着力の比率（吸湿処理後の接着力／吸湿処理前の接着力）が０．９以上であることを特徴とする項１記載の半導体用接着シート。
３． 半導体パッケ−ジ用基板に対する熱圧着後の接着力が４ＭＰａ以上である項１または２記載の半導体用接着シート。
４． 接着剤層が高分子量成分を含有してなる項１〜３のいずれかに記載の半導体用接着シート。
５． 高分子量成分のＴｇが−１０〜６０℃、高分子量成分の重量平均分子量が１０万〜１００万であることを特徴とする、項４記載の半導体用接着シート。
６． 接着剤層が、高分子量成分を４０〜９５重量％含有することを特徴とする、項４または５記載の半導体用接着シート。
７． さらに、接着剤層が、フィラを１〜６０重量％含むことを特徴とする項１〜６のいずれかに記載の半導体用接着シート。
８． フィラーの平均一次粒径が、０．００５〜０．７μｍであることを特徴とする、項７記載の半導体用接着シート。
９． さらに、接着剤層が、平均一次粒径０．００５〜０．１μｍであるフィラを１〜１５重量％含有し、かつ、平均一次粒径０．１〜０．７μｍであるフィラを１〜３５重量％含有することを特徴とする項１〜６のいずれかに記載の半導体用接着シート。
１０． さらに、接着剤層が、低分子量高分子を含有することを特徴とする、項１〜９のいずれかに記載の半導体用接着シート。
１１． 低分子量高分子の重量平均分子量が０．１万〜１０万であることを特徴とする、項１０記載の半導体用接着シート。
１２． 項１〜１１記載のいずれかに記載の半導体用接着シートと、ダイシングテープを積層してなるダイシング一体型半導体用接着シート。
The present invention provides an anti-semiconductor adhesive sheet that can be singulated by expanding, has excellent embedding properties in substrate irregularities during molding, and has excellent solder reflow resistance after moisture absorption.
That is, the present invention relates to the following description items.
1. In an adhesive sheet for a semiconductor having an adhesive layer, the adhesive sheet before curing is broken when a dynamic viscoelasticity device is used and an expand test is performed at 5 ° C. under a frequency of 500 Hz or less and a displacement of 95 μm or less. An adhesive sheet for semiconductors, characterized in that
2. When a thermal history of 175 ° C. is applied at the time of wire bonding, the storage elastic modulus at 175 ° C. after 3 hours is less than 10 MPa, the storage elastic modulus at 265 ° C. (soldering reflow temperature) is less than 5 MPa, In addition, the ratio of the adhesive force to the substrate for a semiconductor package before and after moisture absorption treatment (121 ° C., 2 atm, 100% RH, 20 h) (adhesion force after moisture absorption treatment / adhesion force before moisture absorption treatment) is 0.9 or more. Item 2. The adhesive sheet for a semiconductor according to Item 1, wherein:
3. Item 3. The semiconductor adhesive sheet according to Item 1 or 2, wherein the adhesive force after thermocompression bonding to the semiconductor package substrate is 4 MPa or more.
4). Item 4. The semiconductor adhesive sheet according to any one of Items 1 to 3, wherein the adhesive layer contains a high molecular weight component.
5. Item 5. The semiconductor adhesive sheet according to Item 4, wherein the high molecular weight component has a Tg of -10 to 60 ° C, and the high molecular weight component has a weight average molecular weight of 100,000 to 1,000,000.
6). Item 6. The semiconductor adhesive sheet according to Item 4 or 5, wherein the adhesive layer contains 40 to 95% by weight of a high molecular weight component.
7). Furthermore, an adhesive bond layer contains 1 to 60 weight% of fillers, The adhesive sheet for semiconductors in any one of claim | item 1 -6 characterized by the above-mentioned.
8). Item 8. The semiconductor adhesive sheet according to Item 7, wherein the filler has an average primary particle size of 0.005 to 0.7 µm.
9. Further, the adhesive layer contains 1 to 15% by weight of filler having an average primary particle size of 0.005 to 0.1 μm and 1 to 35 of filler having an average primary particle size of 0.1 to 0.7 μm. Item 7. The semiconductor adhesive sheet according to any one of Items 1 to 6, which is contained by weight%.
10. Item 10. The semiconductor adhesive sheet according to any one of Items 1 to 9, wherein the adhesive layer contains a low molecular weight polymer.
11. Item 11. The semiconductor adhesive sheet according to Item 10, wherein the low molecular weight polymer has a weight average molecular weight of 10,000 to 100,000.
12 Item 12. A dicing integrated semiconductor adhesive sheet obtained by laminating the semiconductor adhesive sheet according to any one of items 1 to 11 and a dicing tape.
本発明によれば、半導体装置を製造する際の接着シート付半導体素子を個片化する工程において、エキスパンドによる接着シートの個片化が可能で、且つモールド時に基板凹凸への埋込性に優れ、吸湿後の耐半田リフロー性に優れる半導体用接着シートが得られる。 According to the present invention, in the step of dividing the semiconductor element with an adhesive sheet when manufacturing a semiconductor device, the adhesive sheet can be singulated by expanding, and excellent in embedding in substrate irregularities during molding. Thus, an adhesive sheet for semiconductor having excellent solder reflow resistance after moisture absorption can be obtained.
本発明の半導体用接着シートは、接着剤層を有する。硬化前の前記接着シートが、５℃での動的粘弾性装置の周波数５００ＨＺ以下、変位９５μｍ以下の条件で破断が可能であり、ワイヤボンディング時の熱履歴１７５℃、３時間後の１７５℃の貯蔵弾性率１０ＭＰａ未満、２６５℃（耐半田リフロー温度）での貯蔵弾性率５ＭＰａ未満であり、かつ、吸湿処理（１２１℃、２ａｔｍ、１００％ＲＨ、２０ｈ）前後の半導体パッケージ用基板に対する接着部材の接着力の比率（吸湿処理後の接着力／吸湿処理前の接着力）が０．９以上であることが好ましい。硬化前の状態での動的粘弾性装置の周波数５００ＨＺ以下、変位９５μｍ以下の条件で破断できない場合、エキスパンド時の接着シートの切断性が十分でないことから、動的粘弾性装置の周波数５００ＨＺ以下、変位９５μｍ以下の条件で破断されることが必要である。本発明の動的粘弾性測定装置はレオロジ社製 ＤＶＥ−Ｖ４を使用した。 The adhesive sheet for semiconductor of the present invention has an adhesive layer. The adhesive sheet before curing can be broken under conditions of a frequency of a dynamic viscoelastic device at 500 ° C. or less and a displacement of 95 μm or less at 5 ° C., and a thermal history at the time of wire bonding of 175 ° C. and 175 ° C. after 3 hours. Storage elastic modulus of less than 10 MPa, 265 ° C. (soldering reflow temperature) storage elastic modulus of less than 5 MPa, and adhesive member to a semiconductor package substrate before and after moisture absorption treatment (121 ° C., 2 atm, 100% RH, 20 h) It is preferable that the ratio of adhesive strength (adhesive strength after moisture absorption treatment / adhesive strength before moisture absorption treatment) is 0.9 or more. The frequency of the dynamic viscoelastic device in the state before curing is 500 Hz or less, and when the fracture is not possible under the condition of a displacement of 95 μm or less, the cutting property of the adhesive sheet at the time of expansion is not sufficient. It is necessary to be fractured under a condition where the displacement is 95 μm or less. The dynamic viscoelasticity measuring apparatus of the present invention used DVE-V4 manufactured by Rheology.
本発明の半導体用接着シートの１７５℃、３時間後の１７５℃の貯蔵弾性率は、１０ＭＰａ未満であることが好ましく、１ＭＰａ以上１０ＭＰａ未満であることがより好ましく、２〜９ＭＰａであることが更に好ましく、３〜８ＭＰａであることが特に好ましい。硬化後の１７５℃の貯蔵弾性率が１ＭＰａ未満では、接着シートのはみ出しが生じる可能性があり、１０ＭＰａ以上では基板凹凸への埋込性が低下する可能性がある。また、２６５℃（耐半田リフロー温度）での貯蔵弾性率は５ＭＰａ未満であることが好ましく、３ＭＰａ未満であることがより好ましい。２６５℃の貯蔵弾性率が５ＭＰａ以上では耐半田リフロー性が低下する可能性がある。本発明の弾性率測定は、動的粘弾性測定装置（レオロジ社製 ＤＶＥ−Ｖ４）を使用し、接着剤硬化物に引張り荷重をかけて、周波数１０Ｈｚ、昇温速度３〜１０℃／ｍｉｎで−５０℃から３００℃まで測定する温度依存性測定モードで行った。 The storage elastic modulus at 175 ° C. after 3 hours of the adhesive sheet for semiconductor of the present invention is preferably less than 10 MPa, more preferably 1 MPa or more and less than 10 MPa, and further preferably 2 to 9 MPa. It is preferably 3 to 8 MPa, particularly preferably. If the storage elastic modulus at 175 ° C. after curing is less than 1 MPa, the adhesive sheet may protrude, and if it is 10 MPa or more, the embedding property to the substrate irregularities may be lowered. Further, the storage elastic modulus at 265 ° C. (solder-proof reflow temperature) is preferably less than 5 MPa, and more preferably less than 3 MPa. When the storage elastic modulus at 265 ° C. is 5 MPa or more, the solder reflow resistance may be lowered. The elastic modulus measurement of the present invention uses a dynamic viscoelasticity measuring device (DVE-V4 manufactured by Rheology), applies a tensile load to the cured adhesive, and has a frequency of 10 Hz and a heating rate of 3 to 10 ° C./min. The measurement was performed in a temperature dependence measurement mode in which measurement was performed from −50 ° C. to 300 ° C.
本発明の接着シートの吸湿処理（１２１℃、２ａｔｍ、１００％ＲＨ、２０ｈ）０時間と２４時間後の半導体パッケージ用基板に対する接着部材の接着力の比率（吸湿処理後の接着力／吸湿処理前の接着力）が０．９以上であることが好ましく、０．９未満では耐半田リフロー時に剥離が発生する可能性がある。 Moisture absorption treatment of the adhesive sheet of the present invention (121 ° C., 2 atm, 100% RH, 20 h) Ratio of the adhesive force of the adhesive member to the semiconductor package substrate after 0 hour and 24 hours (adhesive force after moisture absorption treatment / before moisture absorption treatment) Is preferably 0.9 or more, and if it is less than 0.9, peeling may occur at the time of solder reflow resistance.
また、本発明の接着剤は、好ましくは、高分子量成分を含有する。シート切断時の温度範囲が−１０℃未満では、エキスパンド時にダイシングテープが破断する可能性があり、また６０℃を超えることで、接着シートが軟化するため、エキスパンド時に接着シートを良好で切断できない。温度範囲は−１０〜１０℃が好ましく、−５〜５℃がより好ましい。 The adhesive of the present invention preferably contains a high molecular weight component. If the temperature range at the time of cutting the sheet is less than −10 ° C., the dicing tape may break at the time of expansion, and if it exceeds 60 ° C., the adhesive sheet is softened, so that the adhesive sheet is good and cannot be cut at the time of expansion. The temperature range is preferably −10 to 10 ° C., more preferably −5 to 5 ° C.
高分子量成分の含有量が４０重量％未満だと、硬化後の弾性率が高く基板凹凸への埋込性が低下する可能性がある。また、９５重量％を超えると、硬化後の弾性率が低く信頼性が低下する可能性があることと、動的粘弾性装置の周波数５００ＨＺ以下、変位９５μｍ以下の条件で破断できなくなり、エキスパンドによる接着シートの個片化が困難となる可能性がある。そのため高分子量成分（熱可塑性樹脂）の含有量は、４０〜９５重量％が好ましく、４５〜６５重量％がより好ましく、５０〜６０重量％が特に好ましい。 If the content of the high molecular weight component is less than 40% by weight, the elastic modulus after curing is high and the embeddability in the substrate irregularities may be lowered. Further, if it exceeds 95% by weight, the elastic modulus after curing may be low and the reliability may be lowered, and the dynamic viscoelastic device cannot be broken under a frequency of 500 Hz or less and a displacement of 95 μm or less. It may be difficult to divide the adhesive sheet. Therefore, the content of the high molecular weight component (thermoplastic resin) is preferably 40 to 95% by weight, more preferably 45 to 65% by weight, and particularly preferably 50 to 60% by weight.
高分子量成分のガラス転位温度（Ｔｇ）は−１０〜６０℃であることがこのましい。また、重量平均分子量は、１０万〜１００万であることが好ましく、１０万〜９０万であることがより好ましく、５０万〜８０万であることが最も好ましい。重量平均分子量が２万未満だと、シート状、フィルム状での強度や可とう性の低下やタック性が増大する可能性があり、１００万を超えると、溶剤への溶解性が低下し作業性が悪くなる。 The glass transition temperature (Tg) of the high molecular weight component is preferably -10 to 60 ° C. The weight average molecular weight is preferably 100,000 to 1,000,000, more preferably 100,000 to 900,000, and most preferably 500,000 to 800,000. If the weight average molecular weight is less than 20,000, there is a possibility that the strength and flexibility in sheet form and film form will be lowered and tackiness will be increased. Sexuality gets worse.
高分子量成分としては、熱可塑性樹脂が好ましく、ポリアミド樹脂、ポリイミド樹脂、ポリアミドイミド樹脂が挙げられるが、エポキシ樹脂と非相溶であるグリシジルアクリレート又はグリシジルメタクリレート０．５〜６重量％を含む重量平均分子量が５０万以上であるエポキシ基含有アクリル共重合体であることが好ましい。 As the high molecular weight component, a thermoplastic resin is preferable, and examples include a polyamide resin, a polyimide resin, and a polyamideimide resin, but a weight average containing 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate which is incompatible with the epoxy resin. An epoxy group-containing acrylic copolymer having a molecular weight of 500,000 or more is preferable.
グリシジルアクリレート又はグリシジルメタクリレート０．５〜６重量％を含む重量平均分子量が５０万以上であるエポキシ基含有アクリル共重合体としては、特に制限が無く、ナガセケムテック株式会社製 ＨＴＲ―８６０Ｐ−３ＤＲ等を用いることができる。官能基モノマーが、カルボン酸タイプのアクリル酸や、水酸基タイプのヒドロキシメチル（メタ）アクリレートを用いると、橋架け反応が進行しやすく、ワニス状態でのゲル化、硬化前状態での硬化度の上昇による接着力の低下等の問題があるため好ましくない。また、官能基モノマーとして用いるグリシジル（メタ）アクリレートの量は、通常、２〜６重量％の共重合体比とする。２重量％未満だと接着力が低下する可能性があり、６重量％を超えるとゲル化する可能性がある。残部はエチル（メタ）アクリレートやブチル（メタ）アクリレートまたは両者の混合物を用いることができるが、混合比率は、共重合体のガラス転移温度（以下Ｔｇと略す）を考慮して決定し、Ｔｇは−１０℃以上であることが好ましい。Ｔｇが−１０℃未満であると硬化前状態での接着剤層のタック性が大きくなり取り扱い性が悪化する可能性がある。重合方法は特に制限が無く、パール重合、溶液重合等を使用することができる。 The epoxy group-containing acrylic copolymer having a weight average molecular weight of 0.5 to 6% by weight containing glycidyl acrylate or glycidyl methacrylate is not particularly limited, and is HTR-860P-3DR manufactured by Nagase ChemteX Corporation. Can be used. When the functional group monomer is carboxylic acid type acrylic acid or hydroxyl group type hydroxymethyl (meth) acrylate, the crosslinking reaction is likely to proceed, gelling in the varnish state, and increasing the degree of curing in the pre-curing state This is not preferable because there is a problem such as a decrease in adhesive strength due to. The amount of glycidyl (meth) acrylate used as the functional group monomer is usually 2 to 6% by weight of the copolymer. If it is less than 2% by weight, the adhesive strength may be reduced, and if it exceeds 6% by weight, gelation may occur. The balance can be ethyl (meth) acrylate or butyl (meth) acrylate or a mixture of both, but the mixing ratio is determined in consideration of the glass transition temperature of the copolymer (hereinafter abbreviated as Tg), and Tg is It is preferably −10 ° C. or higher. When Tg is less than −10 ° C., the tackiness of the adhesive layer in the pre-curing state is increased, and the handleability may be deteriorated. The polymerization method is not particularly limited, and pearl polymerization, solution polymerization and the like can be used.
本発明は、好ましくは、フィラを含有する接着シートであって、限定するものでは無いがフィラとしては無機フィラが挙げられる。無機フィラとしては、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、アルミナ、窒化アルミニウム、ホウ酸アルミウイスカ、窒化ホウ素、結晶性シリカ、非晶性シリカ、アンチモン酸化物などが挙げられる。熱伝導性向上のためには、アルミナ、窒化アルミニウム、窒化ホウ素、結晶性シリカ、非晶性シリカ等が好ましい。溶融粘度の調整やチクソトロピック性の付与の目的には、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、アルミナ、結晶性シリカ、非晶性シリカ等が好ましい。また、耐湿性を向上させるためにはアルミナ、シリカ、水酸化アルミニウム、アンチモン酸化物が好ましいが、汎用性からシリカがより好ましい。 The present invention is preferably an adhesive sheet containing a filler and includes, but is not limited to, an inorganic filler. Inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, Examples thereof include amorphous silica and antimony oxide. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, non-crystalline silica Crystalline silica and the like are preferred. In order to improve moisture resistance, alumina, silica, aluminum hydroxide, and antimony oxide are preferable, but silica is more preferable in view of versatility.
本発明の接着剤層中のフィラ量は、平均一次粒径が０．００５〜０．１μｍでは、１〜１５重量％であることが好ましく、２〜１０重量％であることがより好ましく、３〜６重量％であることが特に好ましく、併用する平均一次粒径が０．１〜０．７μｍでは、１〜３５重量％が好ましく、１０〜３５重量％がより好ましく、２０〜３０重量％であることが特に好ましい。配合量が少ないと接着シートをエキスパンドにより切断することが難しく、多いと接着シートの濡れ性が低下し、ウェハ貼付性、耐半田リフロー性が低下する。 The amount of filler in the adhesive layer of the present invention is preferably 1 to 15% by weight, more preferably 2 to 10% by weight when the average primary particle size is 0.005 to 0.1 μm. It is particularly preferable that the average primary particle size used in combination is 0.1 to 0.7 μm, preferably 1 to 35% by weight, more preferably 10 to 35% by weight, and 20 to 30% by weight. It is particularly preferred. When the blending amount is small, it is difficult to cut the adhesive sheet with an expand, and when the blending amount is large, the wettability of the adhesive sheet is lowered, and the wafer sticking property and the solder reflow resistance are lowered.
フィラの粒径は、特に限定するものでは無いが、平均一次粒径が大きすぎると、接着シートの薄膜化が困難であるため、平均一次粒径が１０μｍ以下が好ましく、また粒径が小さすぎると作業性が悪いため、平均一次粒径０．００５μｍ以上が好ましい。上記範囲で、異なる粒径分布をもつ複数種のフィラを混合して使用することが好ましく、破断伸度を小さくしながら貯蔵弾性率を低く保つためには、異なる平均粒径の範囲にあるフィラを組み合わせて用いる場合は平均一次粒径が０．００５〜０．１μｍのフィラと平均一次粒径が０．１〜０．７μｍのフィラを含むことがより好ましく、単独で用いる場合は平均一次粒径が０．００５〜０．７μｍのフィラを用いることが好ましい。
なお、破断伸度は、例えば、試験片：10mm×30mm、チャック間距離：20mm、試験速度：500mm/minの条件で引張り試験を行ったときの破断伸び値により示される。
The particle size of the filler is not particularly limited, but if the average primary particle size is too large, it is difficult to reduce the thickness of the adhesive sheet. Therefore, the average primary particle size is preferably 10 μm or less, and the particle size is too small. In view of poor workability, the average primary particle size is preferably 0.005 μm or more. In the above range, it is preferable to use a mixture of a plurality of types of fillers having different particle size distributions. In order to keep the storage elastic modulus low while reducing the elongation at break, the fillers in different average particle size ranges are used. When used in combination, it is more preferable to include a filler having an average primary particle size of 0.005 to 0.1 μm and a filler having an average primary particle size of 0.1 to 0.7 μm. When used alone, the average primary particle It is preferable to use a filler having a diameter of 0.005 to 0.7 μm.
The elongation at break is indicated by, for example, the elongation at break when a tensile test is performed under the conditions of a test piece: 10 mm × 30 mm, a distance between chucks: 20 mm, and a test speed: 500 mm / min.
本発明で使用する低分子量高分子は、良好な接着力を持たせるために、熱硬化性樹脂を含むことが好ましい。このような化合物としては、例えば、エポキシ樹脂、シアネート樹脂、ビスマレイミド樹脂、フェノール樹脂、ユリア樹脂、メラミン樹脂、アルキド樹脂、アクリル樹脂、不飽和ポリエステル樹脂、ジアリールフタレート樹脂、シリコーン樹脂、レゾルシノールホルムアルデヒド樹脂、キシレン樹脂、フラン樹脂、ポリウレタン樹脂、ケトン樹脂、トリアリールシアヌレート樹脂、ポリイソシアネート樹脂、トリス（２−ヒドロキシエチル）イソシアヌラートを含有する樹脂、トリアリールトリメリタートを含有する樹脂、シクロペンタジエンから合成された樹脂、芳香族ジシアナミドの三量化による熱硬化性樹脂等が挙げられる。中でも、高温において優れた接着力を持たせることができる点で、エポキシ樹脂、シアネート樹脂及びビスマレイミド樹脂が好ましく、エポキシ樹脂がより好ましい。なお、これら熱硬化性樹脂は単独又は二種類以上を組み合わせて用いることができる。 The low molecular weight polymer used in the present invention preferably contains a thermosetting resin in order to have good adhesive force. Examples of such compounds include epoxy resins, cyanate resins, bismaleimide resins, phenol resins, urea resins, melamine resins, alkyd resins, acrylic resins, unsaturated polyester resins, diaryl phthalate resins, silicone resins, resorcinol formaldehyde resins, From xylene resin, furan resin, polyurethane resin, ketone resin, triaryl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triaryl trimellitate, cyclopentadiene Examples include synthesized resins and thermosetting resins by trimerization of aromatic dicyanamide. Among these, an epoxy resin, a cyanate resin, and a bismaleimide resin are preferable, and an epoxy resin is more preferable in that an excellent adhesive force can be given at a high temperature. In addition, these thermosetting resins can be used individually or in combination of 2 or more types.
本発明の低分子量高分子は、環球式で測定した軟化点が５０℃以上であれば特に制限はなく、例えば、油化シェルエポキシ株式会社製 エピコート１００１、１００２、１００３、１０５５、１００４、１００４ＡＦ、１００７、１００９、１００３Ｆ、１００４Ｆ、ダウケミカル日本株式会社製 Ｄ．Ｅ．Ｒ．６６１、６６２、６６３Ｕ、６６４、６６４Ｕ、６６７、６４２Ｕ、６７２Ｕ、６７３ＭＦ、６６８、６６９等のビスフェノールＡ型エポキシ樹脂、東都化成株式会社製 ＹＤＦ−２００４等のビスフェノールＦ型エポキシ樹脂、日本化薬株式会社製 ＥＰＰＮ−２０１等のフェノールノボラック型エポキシ樹脂、油化シェルエポキシ株式会社製 エピコート １８０Ｓ６５、チバスペシャリティーケミカルズ社製 アラルダイト ＥＣＮ１２７３、１２８０、１２９９、東都化成株式会社製 ＹＤＣＮ−７０１、７０２、７０３、７０４、日本化薬株式会社製 ＥＯＣＮ−１０２０、１０２Ｓ、１０３Ｓ、１０４Ｓ、住友化学工業株式会社製 ＥＳＣＮ−１９５Ｘ、２００Ｌ、２２０等のクレゾールノボラックエポキシ樹脂、油化シェルエポキシ株式会社製 Ｅｐｏｎ １０３１Ｓ、エピコート １０３２Ｈ６０、１５７Ｓ７０、日本化薬株式会社製 ＥＰＰＮ ５０１Ｈ、５０２Ｈ等の多官能エポキシ樹脂、チバスペシャリティーケミカルズ社製 アラルダイトＰＴ８１０等の複素環含有エポキシ樹脂等が挙げられるが、これらに限定されるものではない。 The low molecular weight polymer of the present invention is not particularly limited as long as the softening point measured by ring and ball is 50 ° C. or higher. For example, Epicoat 1001, 1002, 1003, 1055, 1004, 1004AF manufactured by Yuka Shell Epoxy Co., Ltd. 1007, 1009, 1003F, 1004F, manufactured by Dow Chemical Japan Co., Ltd. E. R. Bisphenol A type epoxy resins such as 661, 662, 663U, 664, 664U, 667, 642U, 672U, 673MF, 668, 669, etc., bisphenol F type epoxy resins such as YDF-2004 manufactured by Tohto Kasei Co., Ltd., Nippon Kayaku Co., Ltd. Phenol novolac type epoxy resin such as EPPN-201 manufactured by EPIKAWA 180E65 manufactured by Yuka Shell Epoxy, Araldite ECN1273, 1280, 1299 manufactured by Ciba Specialty Chemicals, YDCN-701, 702, 703, 704 Nippon Kayaku Co., Ltd. EOCN-1020, 102S, 103S, 104S, Sumitomo Chemical Co., Ltd. ESCN-195X, 200L, 220, etc. Cresol novolac epoxy resin, oily shell epoxy Epoxy 1031S, Epicoat 1032H60, 157S70, Nippon Kayaku Co., Ltd., EPPN 501H, 502H, etc., polyfunctional epoxy resins, Ciba Specialty Chemicals Inc., Araldite PT810, etc. It is not limited to.
本発明の低分子量高分子の重量平均分子量は、特に限定するものではないが、０．１万以下だと低粘度の液状である場合が多く、接着シートの破断性を低下させる可能性がある。また、１０万以上の場合、高分子量化に伴い、樹脂間での分子の絡み合いにより、接着シートの破断性を低下させる可能性がある。そのため本発明の低分子量高分子の重量平均分子量は、０．１万〜１０万であることが好ましく、０．２万〜１万であることがより好ましく、０．３万〜０．５万であることが特に好ましい。
低分子量高分子の添加量は、好ましくは１〜５０重量％、より好ましくは３〜３０重量％、最も好ましくは５〜２５重量％である。添加量が１重量％未満では、接着力を得ることが難しく、５０重量％以上では硬化後の弾性率が高くなるため埋め込み性が低下する。
The weight average molecular weight of the low molecular weight polymer of the present invention is not particularly limited, but if it is 10000 or less, it is often a low-viscosity liquid and may reduce the breakability of the adhesive sheet. . Moreover, in the case of 100,000 or more, there is a possibility that the breakability of the adhesive sheet is lowered due to the entanglement of molecules between the resins as the molecular weight increases. Therefore, the weight average molecular weight of the low molecular weight polymer of the present invention is preferably from 10,000 to 100,000, more preferably from 20,000 to 10,000, and from 30,000 to 50,000. It is particularly preferred that
The addition amount of the low molecular weight polymer is preferably 1 to 50 % by weight , more preferably 3 to 30 % by weight , and most preferably 5 to 25 % by weight . When the addition amount is less than 1 % by weight, it is difficult to obtain an adhesive force, and when it is 50 % by weight or more, the elastic modulus after curing becomes high, and the embedding property is lowered.
本発明の半導体用接着シートには、熱硬化成分を硬化させる硬化剤を含んでも良い。このような硬化剤としては、例えばフェノール樹脂が挙げられる。フェノール樹脂は、特に制限は無く、８５℃、８５％ＲＨの恒温恒湿槽に４８時間投入後の吸水率が２重量％以下で、熱重量分析計（ＴＧＡ）で測定した３５０℃での加熱質量減少率（昇温速度：５℃／ｍｉｎ，雰囲気：窒素）が５重量％未満のものを使用することができる。このようなフェノール樹脂は、フェノール化合物と２価の連結基であるキシリレン化合物を、無触媒または酸触媒の存在下に反応させて得られる。この様にして製造されているフェノール樹脂として代表的なものに、三井化学株式会社製ミレックスＸＬＣ−シリーズ、ＸＬシリーズなどがある。 The adhesive sheet for semiconductor of the present invention may contain a curing agent that cures the thermosetting component. An example of such a curing agent is a phenol resin. The phenolic resin is not particularly limited, and has a water absorption of 2% by weight or less after being put into a constant temperature and humidity chamber of 85 ° C. and 85% RH for 48%, and is heated at 350 ° C. measured with a thermogravimetric analyzer (TGA). A material having a mass reduction rate (temperature increase rate: 5 ° C./min, atmosphere: nitrogen) of less than 5% by weight can be used. Such a phenol resin is obtained by reacting a phenol compound and a xylylene compound which is a divalent linking group in the presence of no catalyst or an acid catalyst. Representative examples of the phenol resin produced in this way include the Mirex XLC-series and XL series manufactured by Mitsui Chemicals.
また、本発明の半導体用接着シートには、硬化促進剤を添加することもできる。硬化促進剤には、特に制限が無く、各種イミダゾール類を用いることができる。イミダゾール類としては、２−メチルイミダゾール、２−エチル−４−メチルイミダゾール、１−シアノエチル−２−フェニルイミダゾール、１−シアノエチル−２−フェニルイミダゾリウムトリメリテート等が挙げられ、これらは１種又は２種以上を併用することもできる。 Moreover, a hardening accelerator can also be added to the adhesive sheet for a semiconductor of the present invention. There is no restriction | limiting in particular in a hardening accelerator, Various imidazoles can be used. Examples of imidazoles include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, and the like. Two or more kinds can be used in combination.
硬化促進剤の添加量は、エポキシ樹脂及びフェノール樹脂との総量１００重量部に対して０．００３〜５重量部が好ましく、０．００５〜３重量部がより好ましい。添加量が０．００３重量部未満だと硬化性が劣る傾向があり、５重量部を超えると保存安定性が低下する傾向がある。 0.003-5 weight part is preferable with respect to 100 weight part of total amounts with an epoxy resin and a phenol resin, and, as for the addition amount of a hardening accelerator, 0.005-3 weight part is more preferable. When the addition amount is less than 0.003 parts by weight, the curability tends to be inferior, and when it exceeds 5 parts by weight, the storage stability tends to decrease.
また、本発明の半導体用接着シートには、異種材料間の界面結合を良くするために、各種カップリング剤を添加することもできる。カップリング剤としては、シラン系、チタン系、アルミニウム系などが挙げられるが、シラン系カップリング剤が最も好ましい。 In addition, various coupling agents may be added to the semiconductor adhesive sheet of the present invention in order to improve the interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and silane-based coupling agents are most preferable.
シラン系カップリング剤としては、特に制限は無く、例えば、ビニルトリクロルシラン、ビニルトリス（β−メトキシエトキシ）シラン、ビニルトリエトキシシラン、ビニルトリメトキシシラン等のビニルシラン類、γ−メタクリロキシプロピルトリメトキシシラン、γ−メタクリロキシプロピルメチルジメトキシシラン、３−メタクリロキシプロピル−トリメトキシシラン、メチルトリ（メタクリロイルオキエトキシ）シラン等のメタクリロイルシラン類、β−（３，４−エポキシシクロヘキシル）エチルトリメトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン、メチルトリ（グリシジルオキシ）シラン等のエポキシ基含有シラン類、Ｎ−β（アミノエチル）γ−アミノプロピルトリメトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルメチルジメトキシシラン、γ−アミノプロピルトリエトキシシラン、Ｎ‐フェニル−γ−アミノプロピルトリメトキシシラン、３−アミノプロピルメチルジエトキシシラン、３−アミノプロピルトリメトキシシラン、３−アミノプロピル−トリス（２−メトキシ−エトキシ−エトキシ）シラン、Ｎ−メチル−３−アミノプロピルトリメトキシシラン、トリアミノプロピル−トリメトキシシラン、３−４，５−ジヒドロイミダゾール−１−イル−プロピルトリメトキシシラン、アミルトリクロロシラン等のアミノシラン類、γ−メルカプトプロピルトリメトキシシラン、γ−メルカプトプロピルトリエトキシシラン、３−メルカプトプロピル−メチルジメトキシシラン等のメルカプトシラン類、３−ウレイドプロピルトリエトキシシラン、３−ウレイドプロピルトリメトキシシラン等の尿素結合含有シラン類、トリメチルシリルイソシアネート、ジメチルシリルイソシアネート、メチルシリルトリイソシアネート、ビニルシリルトリイソシアネート、フェニルシリルトリイソシアネート、テトライソシアネートシラン、エトキシシランイソシアネート等のイソシアネート基含有シラン類、３−クロロプロピル−メチルジメトキシシラン、３−クロロプロピル−ジメトキシシラン、３−シアノプロピル−トリエトキシシラン、ヘキサメチルジシラザン、Ｎ，ｏ−ビス（トリメチルシリル）アセトアミド、メチルトリメトキシシラン、メチルトリエトキシシラン、エチルトリクロロシラン、ｎ−プロピルトリメトキシシラン、イソブチルトリメトキシシラン、オクチルトリエトキシシラン、フェニルトリメトキシシラン、フェニルトリエトキシシラン、Ｎ−β（Ｎ−ビニルベンジルアミノエチル）−γ−アミノプロピルトリメトキシシラン、オクタデシルジメチル〔３−（トリメトキシシリル）プロピル〕アンモニウムクロライド、γ−クロロプロピルメチルジクロロシラン、γ−クロロプロピルメチルジメトキシシラン、γ−クロロプロピルメチルジエトキシシランなどを使用することができ、これらの１種又は２種以上を併用することもできる。 There is no restriction | limiting in particular as a silane coupling agent, For example, vinyl silanes, such as vinyl trichlorosilane, vinyl tris ((beta) -methoxyethoxy) silane, vinyl triethoxysilane, vinyltrimethoxysilane, (gamma) -methacryloxypropyl trimethoxysilane , Γ-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyl-trimethoxysilane, methacryloylsilanes such as methyltri (methacryloyloxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- Contains epoxy groups such as glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, methyltri (glycidyloxy) silane Orchids, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltri Methoxysilane, 3-aminopropylmethyldiethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyl-tris (2-methoxy-ethoxy-ethoxy) silane, N-methyl-3-aminopropyltrimethoxysilane, tri Aminosilanes such as aminopropyl-trimethoxysilane, 3-4,5-dihydroimidazol-1-yl-propyltrimethoxysilane, amyltrichlorosilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, 3 -Merca Mercaptosilanes such as topropyl-methyldimethoxysilane, urea bond-containing silanes such as 3-ureidopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, trimethylsilyl isocyanate, dimethylsilyl isocyanate, methylsilyl triisocyanate, vinylsilyl triisocyanate Isocyanate group-containing silanes such as phenylsilyl triisocyanate, tetraisocyanate silane, ethoxysilane isocyanate, 3-chloropropyl-methyldimethoxysilane, 3-chloropropyl-dimethoxysilane, 3-cyanopropyl-triethoxysilane, hexamethyldi Silazane, N, o-bis (trimethylsilyl) acetamide, methyltrimethoxysilane, methyltriethoxysilane, ethyltri Chlorosilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, N-β (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane, octadecyl Dimethyl [3- (trimethoxysilyl) propyl] ammonium chloride, γ-chloropropylmethyldichlorosilane, γ-chloropropylmethyldimethoxysilane, γ-chloropropylmethyldiethoxysilane, etc. can be used, one of these Or 2 or more types can also be used together.
カップリング剤の添加量は、その効果や耐熱性およびコストから、樹脂の合計１００重量部に対し、０．１〜１０重量部とするのが好ましい。 It is preferable that the addition amount of a coupling agent shall be 0.1-10 weight part with respect to the total 100 weight part of resin from the effect, heat resistance, and cost.
さらに接着剤層には、イオン性不純物を吸着して、吸湿時の絶縁信頼性をよくするために、イオン捕捉剤を添加することもできる。イオン捕捉剤としては、特に制限が無く、銅がイオン化して溶け出すのを防止するため銅害防止剤として知られる化合物、例えば、トリアジンチオール化合物、ビスフェノール系還元剤などを使用することができ、ジルコニウム系、アンチモンビスマス系マグネシウムアルミニウム化合物等の無機イオン吸着剤を使用することもできる。 Further, an ion scavenger can be added to the adhesive layer in order to adsorb ionic impurities and improve insulation reliability during moisture absorption. As the ion scavenger, there is no particular limitation, and a compound known as a copper damage preventive agent to prevent copper from ionizing and dissolving, for example, a triazine thiol compound, a bisphenol-based reducing agent, etc. can be used. Inorganic ion adsorbents such as zirconium-based and antimony bismuth-based magnesium aluminum compounds can also be used.
イオン捕捉剤の添加量は、添加による効果や耐熱性、コストなどから、１〜１０重量％とするのが好ましい。 The addition amount of the ion scavenger is preferably 1 to 10% by weight from the effect of addition, heat resistance and cost.
本発明の半導体用接着シートは、本発明の半導体用接着シートを溶剤に溶解あるいは分散してワニスとし、支持体フィルム上に塗布、加熱し溶剤を除去することによって得ることができる。 The adhesive sheet for semiconductors of the present invention can be obtained by dissolving or dispersing the adhesive sheet for semiconductors of the present invention in a solvent to form a varnish, applying the coating on a support film and heating to remove the solvent.
前記支持体フィルムとしては、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポイエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルムなどのプラスチックフィルムを使用することができ、これらプラスチックフィルムは表面を離型処理して使用しることもできる。支持体フィルムは、使用時に剥離して接着剤層のみを使用することもできるし、支持体フィルムとともに使用し、後で除去することもできる。 As the support film, a plastic film such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, or a polyimide film can be used. It can also be processed and used. The support film can be peeled off at the time of use and only the adhesive layer can be used, or it can be used together with the support film and removed later.
前記ワニス化の溶剤としては、特に制限は無いが、フィルム作製時の揮発性等を考慮し、メチルエチルケトン、アセトン、メチルイソブチルケトン、２−エトキシエタノール、トルエン、キシレン、ブチルセルソルブ、メタノール、エタノール、２−メトキシエタノールなど比較的低沸点の溶媒を使用するのが好ましい。また、塗膜性を向上させるなどの目的で、ジメチルアセトアミド、ジメチルホルムアミド、Ｎ−メチルピロリドン、シクロヘキサノンなど比較的高沸点の溶媒を加えることもできる。 The varnishing solvent is not particularly limited, but considering the volatility during film production, methyl ethyl ketone, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, xylene, butyl cellosolve, methanol, ethanol, It is preferable to use a solvent having a relatively low boiling point such as 2-methoxyethanol. For the purpose of improving the coating properties, a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone can be added.
本発明の半導体用接着シートにフィラを添加した際のワニスの製造には、フィラの分散性を考慮して、らいかい機、３本ロール、ボールミル及びビーズミルなどを使用するのが好ましく、これらを組み合せて使用することもできる。また、フィラと低分子量物をあらかじめ混合した後、高分子量物を配合することによって、混合する時間を短縮することも可能となる。また、ワニスとした後、真空脱気等によってワニス中の気泡を除去することもできる。 In the production of the varnish when filler is added to the adhesive sheet for semiconductor of the present invention, it is preferable to use a raking machine, three rolls, ball mill and bead mill in consideration of dispersibility of the filler. It can also be used in combination. In addition, the mixing time can be shortened by mixing the filler and the low molecular weight material in advance and then blending the high molecular weight material. Further, after the varnish is formed, the bubbles in the varnish can be removed by vacuum degassing or the like.
支持体フィルムへのワニスの塗布方法としては、公知の方法を用いることができ、例えば、ナイフコート法、ロールコート法、スプレーコート法、グラビアコート法、バーコート法、カーテンコート法等が挙げられる。 As a method for applying the varnish to the support film, a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. .
接着剤層の厚みは、１〜１００μｍが好ましいが、これに制限されるものでは無い。１μｍより薄いと成膜性が困難であり、１００μｍより厚いと経済的でなくなる。また、本発明の接着部材における接着剤層は、所望の厚さを得るために、２枚以上を貼り合わせることもできる。この場合には、接着剤層同士の剥離が発生しないような貼り合わせ条件が必要である。 The thickness of the adhesive layer is preferably 1 to 100 μm, but is not limited thereto. If it is thinner than 1 μm, film formation is difficult, and if it is thicker than 100 μm, it is not economical. Further, two or more adhesive layers in the adhesive member of the present invention can be bonded together in order to obtain a desired thickness. In this case, it is necessary to have a bonding condition that does not cause peeling between the adhesive layers.
また、上記の接着シートはダイシングテープと予め貼り合わせたダイシングテープ一体型接着シートとしても使用される。この場合、ウェハへのラミネート工程が一回で済む点で、作業の効率化が可能である。 Moreover, said adhesive sheet is used also as a dicing tape integrated adhesive sheet previously bonded with the dicing tape. In this case, the efficiency of the operation can be improved in that the laminating process on the wafer is performed only once.
本発明に使用するダイシングテープとしては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルムなどのプラスチックフィルム等が挙げられる。これらは他材料との多層構造にして用いることも出来る。また、必要に応じてプライマー塗布、ＵＶ処理、コロナ放電処理、研磨処理、エッチング処理等の表面処理を行っても良い。ダイシングテープは粘着性を有することが必要であり、ダイシングテープの片面に粘着剤層を設けても良い。これは、粘着剤層の樹脂組成物において、特に液状成分の比率、高分子量成分のＴｇを調整することによって得られる適度なタック強度を有する樹脂組成物を塗布乾燥することで形成可能である。 Examples of the dicing tape used in the present invention include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. These can be used in a multilayer structure with other materials. Further, surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment and etching treatment may be performed as necessary. The dicing tape needs to have adhesiveness, and an adhesive layer may be provided on one side of the dicing tape. This can be formed by applying and drying a resin composition having an appropriate tack strength obtained by adjusting the ratio of the liquid component and the Tg of the high molecular weight component in the resin composition of the pressure-sensitive adhesive layer.
また、半導体装置を製造する際に用いた場合、ダイシング時には半導体素子が飛散しない接着力を有し、その後ピックアップ時にはダイシングテープから剥離することが必要である。例えば、接着シートやダイシングテープの粘着性が高すぎて両者を張り合わせたときのピール強度が１５０Ｎ／ｍ以上の場合、分離が困難になることがある。そのため、適宜、接着シートのタック強度を調節することが好ましく、その方法としては、接着シートの室温における流動性を上昇させることにより、接着強度及びタック強度も上昇する傾向があり、流動性を低下させれば接着強度及びタック強度も低下する傾向があることを利用すればよい。例えば、流動性を上昇させる場合には、可塑剤の含有量の増加、粘着付与材含有量の増加等の方法がある。逆に流動性を低下させる場合には、前記化合物の含有量を減らせばよい。前記可塑剤としては、例えば、単官能のアクリルモノマー、単官能エポキシ樹脂、液状エポキシ樹脂、アクリル系樹脂、エポキシ系のいわゆる希釈剤等が挙げられる。 Further, when used in manufacturing a semiconductor device, it has an adhesive force that prevents the semiconductor element from scattering during dicing, and after that, it must be peeled off from the dicing tape during pick-up. For example, separation may be difficult when the adhesive strength of the adhesive sheet or dicing tape is too high and the peel strength when they are laminated is 150 N / m or more. For this reason, it is preferable to appropriately adjust the tack strength of the adhesive sheet, and as a method for this, by increasing the fluidity of the adhesive sheet at room temperature, the adhesive strength and the tack strength tend to increase, and the fluidity is lowered. If this is done, the fact that the adhesive strength and tack strength tend to decrease may be utilized. For example, in order to increase fluidity, there are methods such as increasing the plasticizer content and increasing the tackifier content. Conversely, when the fluidity is lowered, the content of the compound may be reduced. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy-based so-called diluents.
本発明の接着シートは、それ自体で用いても構わないが、本発明の接着シートを従来公知のダイシングテープ上に積層したダイシングテープ一体型接着シートとして用いることもできる。接着シートとダイシングテープを積層したダイシングテープ一体型接着シートの、ダイシングの際のピール強度は、１５０Ｎ／ｍ以下が好ましく、より好ましくは５０Ｎ／ｍ以下である。ダイシングテープ上に接着シートを積層する方法としては、印刷のほか、予め作成した接着シートをダイシングテープ上にプレス、ホットロールラミネート方法が挙げられるが、連続的に製造でき、効率が良い点でホットロールラミネート方法が好ましい。尚、ダイシングテープの膜厚は、特に制限はなく、接着シートの膜厚やダイシングテープ一体型接着シートの用途によって適宜、当業者の知識に基づいて定められるものであるが、経済性がよく、フィルムの取扱い性が良い点で６０〜２００μｍ、好ましくは７０〜１７０μｍである。 The adhesive sheet of the present invention may be used by itself, but can also be used as a dicing tape-integrated adhesive sheet in which the adhesive sheet of the present invention is laminated on a conventionally known dicing tape. The peel strength of the dicing tape integrated adhesive sheet obtained by laminating the adhesive sheet and the dicing tape is preferably 150 N / m or less, and more preferably 50 N / m or less. As a method of laminating the adhesive sheet on the dicing tape, in addition to printing, a pre-made adhesive sheet can be pressed on the dicing tape and a hot roll laminating method. However, it can be continuously manufactured and is hot in terms of efficiency. A roll laminating method is preferred. In addition, the film thickness of the dicing tape is not particularly limited, and is appropriately determined based on the knowledge of a person skilled in the art depending on the film thickness of the adhesive sheet and the application of the dicing tape-integrated adhesive sheet. The film has a handleability of 60 to 200 μm, preferably 70 to 170 μm in terms of good handleability.
半導体搭載用支持部材としては、ダイパットを有するリードフレーム、セラミック基板や有機基板など基板材質に限定されることなく用いることができる。セラミック基板としては、アルミナ基板、窒化アルミ基板などを用いることができる。有機基板としては、ガラスクロスにエポキシ樹脂を含漬させたＦＲ−４基板、ビスマレイミド−トリアジン樹脂を含漬させたＢＴ基板、さらにはポリイミドフィルムを基材として用いたポリイミドフィルム基板などを用いることができる。 The support member for mounting a semiconductor can be used without being limited to a substrate material such as a lead frame having a die pad, a ceramic substrate, or an organic substrate. As the ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used. As an organic substrate, an FR-4 substrate in which an epoxy resin is impregnated in a glass cloth, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate using a polyimide film as a base material, or the like is used. Can do.
配線の形状としては、片面配線、両面配線、多層配線いずれの構造でも良く、必要に応じて電気的に接続された貫通孔、非貫通孔を設けても良い。さらに、配線が半導体装置の外部表面に現れる場合には、保護樹脂層を設けることが好ましい。 The shape of the wiring may be any of single-sided wiring, double-sided wiring, and multilayer wiring, and may be provided with through-holes and non-through-holes that are electrically connected as necessary. Further, when the wiring appears on the outer surface of the semiconductor device, it is preferable to provide a protective resin layer.
接着部材を支持部材へ張り付ける方法としては、接着部材を所定の形状に切断し、その切断された接着部材を支持部材の所望の位置に熱圧着する方法が一般的ではあるが、これを限定するものではない。 As a method of attaching the adhesive member to the support member, a method of cutting the adhesive member into a predetermined shape and thermocompression bonding the cut adhesive member to a desired position of the support member is generally limited. Not what you want.
半導体装置の構造としては、半導体素子の電極と支持部材とがワイヤーボンディングで接続されている構造、半導体素子の電極と支持部材とがテープオートメーテッドボンディング（ＴＡＢ）のインナーリードボンディングで接続されている構造等があるが、これらに限定されるものではなく、何れの場合でも効果がある。 As the structure of the semiconductor device, the electrode of the semiconductor element and the support member are connected by wire bonding, and the electrode of the semiconductor element and the support member are connected by inner lead bonding of tape automated bonding (TAB). Although there are structures, etc., the present invention is not limited to these and is effective in any case.
半導体素子としては、ＩＣ、ＬＳＩ、ＶＬＳＩ等一般の半導体素子を使用することができる。 As the semiconductor element, a general semiconductor element such as an IC, LSI, VLSI can be used.
半導体素子と支持部材の間に発生する熱応力は、半導体素子と支持部材の面積差が小さい場合に著しいが、本発明の半導体装置は低弾性率の接着部材を用いることによりその熱応力を緩和して信頼性を確保する。これらの効果は、半導体素子の面積が、支持部材の面積の７０％以上である場合に非常に有効に現れるものである。また、このように半導体素子と支持部材の面積差が小さい半導体装置においては、外部接続端子はエリア状に設けられる場合が多い。 The thermal stress generated between the semiconductor element and the support member is significant when the area difference between the semiconductor element and the support member is small, but the semiconductor device of the present invention relieves the thermal stress by using a low elastic modulus adhesive member. To ensure reliability. These effects appear very effectively when the area of the semiconductor element is 70% or more of the area of the support member. In such a semiconductor device having a small area difference between the semiconductor element and the support member, the external connection terminals are often provided in an area.
また、接着部材の特性として、前記接着部材を支持部材の所望の位置に熱圧着する工程や、ワイヤーボンディングで接続する工程等、加熱される工程において、接着剤層からの揮発分を抑制できる。 Further, as a characteristic of the adhesive member, volatile matter from the adhesive layer can be suppressed in a heated process such as a process of thermocompression bonding the adhesive member to a desired position of the support member or a process of connecting by wire bonding.
半導体搭載基板用配線基板に用いる配線基板としては、セラミック基板や有機基板など基板材質に限定されることなく用いることができる。セラミック基板としては、アルミナ基板、窒化アルミ基板などを用いることができる。有機基板としては、ガラスクロスにエポキシ樹脂を含漬させたＦＲ−４基板、ビスマレイミド−トリアジン樹脂を含漬させたＢＴ基板、さらにはポリイミドフィルムを基材として用いたポリイミドフィルム基板などを用いることができる。 The wiring substrate used for the semiconductor mounting substrate wiring substrate can be used without being limited to the substrate material such as a ceramic substrate or an organic substrate. As the ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used. As an organic substrate, an FR-4 substrate in which an epoxy resin is impregnated in a glass cloth, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate using a polyimide film as a base material, or the like is used. Can do.
以下、本発明を実施例により詳細に説明するが、本発明はこれらに限定されるものではない。
＜実施例、及び比較例作製方法＞
エポキシ樹脂としてＹＤＣＮ−７００−１０（東都化成株式会社製商品名、クレゾールノボラック型エポキシ樹脂、エポキシ当量２１０、Ｍｗ＝５万）、フェノール樹脂としてミレックスＸＬＣ−ＬＬ（三井化学株式会社製商品名、フェノール樹脂、水酸基当量１７５、吸水率１．８％、３５０℃における加熱質量減少率４％、Ｍｗ ＝ ３万）、これら熱硬化成分に対して、シランカップリング剤としてＡ−１１６０（ＧＥ東芝株式会社製商品名、γ―ウレイドプロピルトリエトキシシラン）、フィラとして、ＳＯ−Ｃ２（株式会社アドマテック製商品名、シリカ、比表面積７ｍ２／ｇ、平均一次粒径０．４〜０．６μｍ）、またはアエロジルＲ９７２（日本アエロジル株式会社製商品名、シリカ、平均一次粒径０．０１６μｍ）からなる組成物に、シクロヘキサノンを加えて攪拌混合し、さらにビーズミルを用いて９０分混練した。これにグリシジルアクリレート又はグリシジルメタクリレート２〜６重量％を含むアクリルゴムＨＴＲ−８６０Ｐ−３（ナガセケムテック株式会社製商品名、Ｍｗ ＝ １００万、Ｔｇ ＝３５℃）、硬化促進剤としてキュアゾール２ＰＺ−ＣＮ（四国化成工業株式会社製商品名、１−シアノエチル−２−フェニルイミダゾール）を混合攪拌し、真空脱気した。ワニスを厚さ７５μｍの離型処理したポリエチレンテレフタレートフィルム上に塗布し、１４０℃で５分間加熱乾燥して、膜厚が２０μｍのＢステージ状態（硬化前）の塗膜を形成し、キャリアフィルムを備えた接着シートを作製した。以下同様に表１の各接着シートを作製した。表１に実施例１、２、比較例１〜４の配合重量部を示す。
EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.
<Example and Comparative Example Production Method>
YDCN-700-10 (trade name, manufactured by Toto Kasei Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent 210, Mw = 50,000) as an epoxy resin, and Mirex XLC-LL (trade name, manufactured by Mitsui Chemicals, Inc.) as a phenol resin Resin, hydroxyl equivalent 175, water absorption 1.8%, heating mass decrease rate at 350 ° C. 4%, Mw = 30,000), A-1160 (GE Toshiba Corporation) as a silane coupling agent for these thermosetting components Product name, γ-ureidopropyltriethoxysilane), as filler, SO-C2 (trade name manufactured by Admatech, silica, specific surface area 7 m 2 / g, average primary particle size 0.4 to 0.6 μm), or Composition comprising Aerosil R972 (trade name, silica, average primary particle size 0.016 μm, manufactured by Nippon Aerosil Co., Ltd.) The product was stirred and mixed with cyclohexanone, and further kneaded for 90 minutes using a bead mill. Acrylic rubber HTR-860P-3 (trade name, manufactured by Nagase Chemtech Co., Ltd., Mw = 1,000,000, Tg = 35 ° C.) containing 2 to 6% by weight of glycidyl acrylate or glycidyl methacrylate, and Curazole 2PZ-CN as a curing accelerator (Product name, 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd.) was mixed and stirred and vacuum degassed. The varnish was coated on a 75 μm thick release-treated polyethylene terephthalate film and dried by heating at 140 ° C. for 5 minutes to form a B-stage coating (before curing) with a film thickness of 20 μm. The prepared adhesive sheet was produced. Similarly, each adhesive sheet shown in Table 1 was prepared. Table 1 shows the parts by weight of Examples 1 and 2 and Comparative Examples 1 to 4.
＜接着シートの評価方法＞
動的粘弾性装置に取り付け、５℃、周波数５００Ｈｚ、変位９５μｍの条件でエキスパンドを行い、接着シートの切断性を観察する。切断（破断）できた場合は○、切断できない場合は×とする。評価結果を表２に示した。
<Evaluation method of adhesive sheet>
It attaches to a dynamic viscoelasticity device, expands on conditions of 5 degreeC, frequency 500Hz, and displacement 95micrometer, and observes the cutting | disconnection property of an adhesive sheet. If it can be cut (ruptured), it is marked as ◯. If it cannot be cut, it is marked as x. The evaluation results are shown in Table 2.
動的粘弾性測定装置（レオロジ社製 ＤＶＥ−Ｖ４）を使用し、接着シートを１７５℃、３時間の条件で熱硬化させ、引張り荷重をかけて、周波数１０Ｈｚ、昇温速度３〜１０℃／ｍｉｎで２５℃から３００℃まで測定する温度依存性測定モードで行った。
１７５℃の貯蔵弾性率の測定を行った。１０ＭＰａ未満を○、それ以外を×とした。
２６５℃の貯蔵弾性率の測定を行った。５ＭＰａ未満を○、それ以外を×とした。
評価結果を表２に示した。
Using a dynamic viscoelasticity measuring device (DVE-V4, manufactured by Rheology), the adhesive sheet was thermally cured at 175 ° C. for 3 hours, a tensile load was applied, a frequency of 10 Hz, and a temperature increase rate of 3 to 10 ° C. / The measurement was performed in a temperature dependence measurement mode in which measurement was performed from 25 ° C. to 300 ° C. in min.
The storage elastic modulus at 175 ° C. was measured. Less than 10 MPa was marked with ◯, and others were marked with ×.
The storage elastic modulus at 265 ° C. was measured. Less than 5 MPa was marked with ◯, and others were marked with ×.
The evaluation results are shown in Table 2.
得られた接着フィルムを半導体チップ（１０×１０ｍｍ）に、温度７０℃、圧力０．３ＭＰａ、速度０．３ｍ／分の条件でホットロールラミネーターを用いて貼りあわせ、その後１００℃、０．２ＭＰａの条件で５μｍの凹凸を有する基板に貼り付けた後、１７０℃で３時間硬化。その後、樹脂封止を行い評価用パッケージを作製した。初期の充填性を観察した。５０試料を観察しＮＧ数を記載した。評価結果を表２に示した。 The obtained adhesive film was bonded to a semiconductor chip (10 × 10 mm) using a hot roll laminator at a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min, and then 100 ° C. and 0.2 MPa. After being attached to a substrate having 5 μm irregularities under conditions, it was cured at 170 ° C. for 3 hours. Thereafter, resin sealing was performed to produce an evaluation package. Initial fillability was observed. Fifty samples were observed and the NG number was recorded. The evaluation results are shown in Table 2.
初期で充填が良好である試料について、８５℃、８５ＲＨ％、１６８時間吸湿後に、２６５℃条件下での耐半田リフロー性を評価した。５０試料評価しＮＧ数を記載した。評価結果を表２に示した。 About the sample with good filling at the initial stage, the solder reflow resistance under the condition of 265 ° C. was evaluated after absorbing moisture at 85 ° C., 85 RH% and 168 hours. 50 samples were evaluated and the NG number was described. The evaluation results are shown in Table 2.
接着性については、ＰＣＴ評価により温度１２１℃、湿度１００％、２気圧の雰囲気（プレッシャークッカーテスト：ＰＣＴ処理）で２０時間後の接着部剤と基板の接着力を２６５℃の条件下でダイシェアにより測定を行った。吸湿処理後の接着力／吸湿処理前の接着力が０．９以上を○、０．９未満を×とした。評価結果を表２に示した。 Regarding the adhesiveness, the adhesive force between the adhesive agent and the substrate after 20 hours in an atmosphere (pressure cooker test: PCT treatment) at a temperature of 121 ° C., a humidity of 100%, and 2 atmospheres according to PCT evaluation is obtained by die sharing under the condition of 265 ° C. Measurements were made. Adhesive strength after moisture absorption treatment / adhesive strength before moisture absorption treatment was 0.9 or more, and less than 0.9 was ×. The evaluation results are shown in Table 2.
実施例１、２は、硬化前の破断伸度が少なく、接着シート切断性が良好であり、且つ硬化後貯蔵弾性率が低いため充填性も良好である。また、吸湿前後の接着力が高く、耐半田リフロー性も良好であった。比較例１は、硬化剤量が多いためエキスパンド切断性は良好だが、充填性が悪い結果であった。比較例２は、硬化剤量が少ないため硬化後貯蔵弾性率が低く充填性良好だが、反応が促進しないため接着力が低い結果であった。比較例３は、Ｒ９７２が多いためエキスパンド切断性は良好だが、充填性に劣る結果であった。比較例４は、ＨＴＲ−８６０Ｐ−３が多いため硬化後貯蔵弾性率が低く、充填性は良好だがエキスパンド切断性に劣る結果であった。 In Examples 1 and 2, the breaking elongation before curing is small, the adhesive sheet has good cutting properties, and the storage modulus after curing is low, so that the filling properties are also good. Further, the adhesive strength before and after moisture absorption was high, and the solder reflow resistance was also good. In Comparative Example 1, the expandability was good because the amount of the curing agent was large, but the filling property was poor. In Comparative Example 2, the amount of the curing agent was small and the storage elastic modulus after curing was low and the filling property was good. However, the reaction was not accelerated, and the adhesive force was low. In Comparative Example 3, the amount of R972 was large, so that the expandability was good, but the filling property was poor. In Comparative Example 4, the amount of HTR-860P-3 was large, so the storage elastic modulus after curing was low, the filling property was good, but the expandability was poor.
以上、本発明について実施例を用いて説明してきたが、以下の作用効果を奏することが分かった。本発明の接着シートは、半導体装置を製造する際のダイシング工程において、エキスパンドによる個片化が可能であり、且つモールド時に基板凹凸への埋込性が優れるとともに耐半田リフロー性に優れる半導体用接着シートが得られる。 As mentioned above, although this invention has been demonstrated using the Example, it turned out that there exist the following effects. The adhesive sheet of the present invention can be singulated by expanding in a dicing process when manufacturing a semiconductor device, and has excellent embedding in a substrate asperity and excellent solder reflow resistance during molding. A sheet is obtained.
Claims (7)
ワイヤボンディング時に１７５℃の熱履歴をかけた場合、その３時間後の１７５℃での貯蔵弾性率が１０ＭＰａ未満であり、２６５℃（耐半田リフロー温度）での貯蔵弾性率が５ＭＰａ未満であり、かつ、吸湿処理（１２１℃、２ａｔｍ、１００％ＲＨ、２０時間）前後の半導体パッケージ用基板に対する接着力の比率（吸湿処理後の接着力／吸湿処理前の接着力）が０．９以上であり、
前記接着剤層は接着剤から形成され、前記接着剤は、
グリシジルアクリレート又はグリシジルメタクリレートを０．５〜６重量％含む重量平均分子量が５０万以上であるエポキシ基含有アクリル共重合体を、４５〜６５重量％、
平均一次粒径が０．００５〜０．１μｍのフィラを１〜（（５／１０５．２）×１００）重量％、
平均一次粒径が０．４〜０．７μｍのフィラを１０〜３５重量％、
重量平均分子量が０．１万より大きく１０万未満のエポキシ樹脂を１重量％以上５０重量％未満、
フェノール樹脂、及び
硬化促進剤を含有し、前記硬化促進剤の量は前記エポキシ樹脂及びフェノール樹脂の総量１００重量部に対し０．８〜５重量部である、エキスパンドにより切断する工程で用いられる半導体用接着シート。 In an adhesive sheet for a semiconductor having an adhesive layer, the adhesive sheet before curing is broken when a dynamic viscoelasticity device is used and an expand test is performed at 5 ° C. under a frequency of 500 Hz or less and a displacement of 95 μm or less. Is possible,
When a thermal history of 175 ° C. is applied at the time of wire bonding, the storage elastic modulus at 175 ° C. after 3 hours is less than 10 MPa, the storage elastic modulus at 265 ° C. (soldering reflow temperature) is less than 5 MPa, In addition, the ratio of the adhesive strength to the semiconductor package substrate before and after moisture absorption treatment (121 ° C., 2 atm, 100% RH, 20 hours) (adhesion strength after moisture absorption treatment / adhesion strength before moisture absorption treatment) is 0.9 or more ,
The adhesive layer is formed from an adhesive, and the adhesive is
45 to 65% by weight of an epoxy group-containing acrylic copolymer having a weight average molecular weight of 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate and having a weight average molecular weight of 500,000 or more,
1 to ((5 / 105.2) × 100) % by weight of filler having an average primary particle size of 0.005 to 0.1 μm,
10 to 35% by weight of filler having an average primary particle size of 0.4 to 0.7 μm,
1 wt% or more and less than 50 wt% of an epoxy resin having a weight average molecular weight of more than 10,000 and less than 100,000,
A semiconductor used in a process of cutting with an expand , containing a phenol resin and a curing accelerator, wherein the amount of the curing accelerator is 0.8 to 5 parts by weight with respect to 100 parts by weight of the total amount of the epoxy resin and the phenol resin. Adhesive sheet.
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