JP2010103154A - Semiconductor adhesive sheet, dicing integrated semiconductor adhesive sheet using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor adhesive sheet which can be sufficiently bonded in a short time, can be embedded in uneven portions of a substrate in molding, and can be reduced in thickness, and to provide a dicing integrated semiconductor adhesive sheet using the same. <P>SOLUTION: A storage modulus of the semiconductor adhesive sheet by dynamic viscoelasticity measurement at 150°C after curing is 6 MPa or more, and 5 MPa or less at 170°C. Alternatively, the semiconductor adhesive sheet includes an adhesive layer of which adhesive after curing at 150°C for 2 minutes is 0.1 MPa or more after thermal compression of a silicon wafer. The dicing integrated semiconductor adhesive sheet is formed by laminating the semiconductor adhesive sheet and a dicing tape. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor adhesive sheet and a dicing integrated semiconductor adhesive sheet.

Conventionally, a silver paste has been mainly used for joining a semiconductor element and a semiconductor element mounting support member.
However, with the recent miniaturization and high performance of semiconductor elements, the support members used are required to be small and fine.

  In response to these demands, silver paste addresses such demands by the occurrence of defects during wire bonding due to protrusions and inclination of semiconductor elements, difficulty in controlling the adhesive film thickness, and the occurrence of adhesive voids. I can't understand. Therefore, in recent years, sheet-like adhesives have been used in order to cope with the above requirements.

  This adhesive sheet is used in an individual sticking method or a wafer back surface sticking method. When manufacturing a semiconductor device using the former individual sticking method adhesive sheet, the reel-like adhesive sheet is cut or punched. After cutting into individual pieces, the individual pieces are bonded to a supporting member, and the semiconductor element separated by the dicing process is joined to the supporting member with the adhesive sheet to produce a supporting member with a semiconductor element, and then as necessary. Thus, a semiconductor device is obtained through a wire bonding process, a sealing process, and the like.

  However, in order to use the adhesive sheet of the piece pasting method, a dedicated assembly device that cuts out the adhesive sheet and adheres it to the support member is necessary, so that the manufacturing cost is higher than the method using silver paste. There was a problem of becoming.

  On the other hand, when manufacturing a semiconductor device using the latter wafer back surface bonding type adhesive sheet, the adhesive sheet is first bonded to the back surface of the semiconductor wafer, and then the dicing tape is bonded to the other surface of the adhesive sheet, and then the wafer is diced. A semiconductor device is obtained by separating the semiconductor element into individual pieces, picking up the separated semiconductor element with an adhesive sheet, bonding it to a support member, and performing processes such as heating, curing, and wire bonding.

  This wafer back-side-bonding type adhesive sheet does not require an apparatus for separating the adhesive sheet to join the semiconductor element with the adhesive sheet to the support member, and the conventional assembly apparatus for silver paste is added as it is or a heating plate is added. It can be used by improving a part of the apparatus such as. Therefore, it has been attracting attention as a method in which the manufacturing cost can be kept relatively low among the assembling methods using the adhesive sheet.

  In the method using the wafer back surface bonding type adhesive sheet, it is necessary to cut the adhesive sheet at the time of the wafer dicing process. For this, a contact type cutting method in which cutting is performed using a conventional diamond blade. In addition, a method of cutting the adhesive sheet at the same time when cutting the wafer along the modified portion by selectively forming the modified portion inside the wafer by irradiating the laser with the laser and then expanding the wafer. There is a method of cutting an adhesive sheet along a wafer cutting line by pasting an adhesive sheet on a wafer that has been expanded, and then expanding (see, for example, Patent Document 1). In order to cut two kinds of materials with different hardness in the same process, an inorganic filler is added to the organic adhesive sheet. It is effective to add.

  In addition, reliability is one of the most important characteristics as a mounting board on which various electronic components such as semiconductor elements are mounted. Among them, the connection reliability against thermal fatigue is a very important item because it is directly related to the reliability of the equipment using the mounting substrate. As a cause of lowering the connection reliability, there is a thermal stress generated by using various materials having different thermal expansion coefficients.

  This is because the thermal expansion coefficient of the semiconductor element is as small as about 4 ppm / ° C., whereas the thermal expansion coefficient of the wiring board on which the electronic component is mounted is as large as 15 ppm / ° C. or more. Since the thermal strain is generated by the thermal strain, this stress relaxation is a problem.

  Further, such a wiring board generally has unevenness due to wiring, and it is necessary to bury the unevenness of the wiring board. From the viewpoints of stress relaxation and embedding on the substrate, it is desirable that the adhesive sheet for semiconductors has a somewhat low elastic modulus after curing, but it is common to add an inorganic filler to improve the cutting property of the adhesive sheet. It has been found that the adhesive sheet is highly elastic, and there is a problem of compatibility between the reliability of the semiconductor package and the cutting property of the adhesive sheet.

JP 2006-093213 A

  INDUSTRIAL APPLICABILITY The present invention provides a semiconductor adhesive sheet that is sufficiently bonded in a short time, has excellent substrate unevenness embedding at the time of molding, and can be thinned, and a dicing integrated semiconductor adhesive using the semiconductor adhesive sheet The purpose is to provide a sheet.

  In the conventional adhesive sheet, since the adhesive force in a short time is insufficient, the chip to which the adhesive sheet is attached is thermocompression-bonded to the mounting substrate or the wafer, and then from the position where the chip is attached during the transportation. Although there was a high possibility that a defect would occur or foreign matter would enter between the mounting substrate and the adhesive sheet during molding, the present inventors increased the adhesive force in a short time and improved the elasticity after curing. It was found that conventional problems can be solved by controlling the rate. Further, since the adhesive film does not contain a filler, it has become possible to reduce the thickness to 5 μm or less.

The present invention relates to a semiconductor adhesive sheet having a storage elastic modulus of 6 MPa or more and 170 ° C. and less than 5 MPa as measured by dynamic viscoelasticity at 150 ° C. after curing.
The present invention also relates to a semiconductor adhesive sheet having an adhesive layer having an adhesive strength of 0.1 MPa or more after curing at 150 ° C. for 2 minutes after thermocompression bonding to a silicon wafer.

Moreover, this invention relates to said adhesive sheet for semiconductors whose thickness of an adhesive bond layer is 1-20 micrometers or less.
Moreover, this invention relates to said semiconductor adhesive sheet in which an adhesive bond layer contains a high molecular weight component.

Moreover, this invention relates to said adhesive sheet for semiconductors whose Tg of the said high molecular weight component is -10-60 degreeC and whose weight average molecular weight is 2-1 million.
Moreover, this invention relates to said adhesive sheet for semiconductors containing 40-95 mass% of said high molecular weight components.

Moreover, this invention relates to said adhesive sheet for semiconductors whose adhesive bond layer does not contain a filler.
Moreover, this invention relates to the adhesive sheet for semiconductors which contains a low molecular weight polymer in said adhesive sheet for semiconductors.

The present invention also relates to the above semiconductor adhesive sheet, wherein the low molecular weight polymer has a weight average molecular weight of 0.1 to 100,000.
Furthermore, the present invention relates to a dicing integrated semiconductor adhesive sheet obtained by laminating the above semiconductor adhesive sheet and a dicing tape.

  Adhesion in a short time is sufficient, and it is possible to obtain a semiconductor adhesive sheet and a dicing integrated semiconductor adhesive sheet that are excellent in embedding of substrate unevenness at the time of molding and can be thinned.

  The present invention is an adhesive sheet containing at least a thermoplastic resin, having a heat history of 170 ° C., a storage elastic modulus of 150 ° C. after 3 hours of 150 ° C. of 6 MPa or more and a temperature of 170 ° C. of less than 5 MPa, and a semiconductor package substrate The adhesive strength of the adhesive member is 150 ° C. and has an adhesive layer of 0.1 MPa or more after curing for 2 minutes, and after curing for 3 hours at 70 ° C., before and after moisture absorption treatment (85 ° C., 85% RH). The ratio of the adhesive strength of the adhesive sheet (adhesive strength after moisture absorption treatment / adhesive strength before moisture absorption treatment) is 0.7 or more.

  In the adhesive sheet for semiconductor of the present invention, the storage elastic modulus at 150 ° C. after curing (after about 3 hours) is required to be 6 MPa or more, and the storage elastic modulus at 150 ° C. after curing is less than 6 MPa, When wire bonding is performed at 150 ° C., the strength may be insufficient.

  Further, the storage elastic modulus at 170 ° C. after curing (after about 3 hours) is required to be less than 5 MPa, and preferably 2 to 4 MPa. And it is preferable that the minimum of a storage elastic modulus is 1 Mpa or more. If the storage elastic modulus at 170 ° C. after curing is less than 1 MPa, the adhesive sheet may protrude, and if it is 5 MPa or more, the embeddability in the substrate irregularities may be lowered.

  The elastic modulus measurement of the present invention uses a dynamic viscoelasticity measuring device (DVE-V4 manufactured by Rheology), applies a tensile load to the cured adhesive, and has a frequency of 10 Hz and a heating rate of 3 to 10 ° C./min. The measurement was performed in a temperature dependence measurement mode in which measurement was performed at −50 to 300 ° C.

  In the adhesive sheet of the present invention, the adhesive force of the adhesive member to the semiconductor package substrate is preferably 0.1 MPa or more after curing at 150 ° C. for 2 minutes, and more preferably 0.15 MPa. If the adhesive force is less than 0.1 MPa, foreign matter may be mixed between the substrate and the adhesive sheet during molding.

  Further, after curing at 70 ° C. for 3 hours, the ratio of the adhesive strength of the adhesive sheet before and after the moisture absorption treatment (85 ° C., 85% RH) (adhesion strength after moisture absorption treatment / adhesion strength before moisture absorption treatment) is 0. If it is 7 or more and less than 0.9, peeling may occur during solder reflow.

  The present invention is an adhesive sheet containing at least a thermoplastic resin as a high molecular weight component, and the content thereof is preferably 40 to 95% by mass, and more preferably 45 to 70% by mass. When the content is less than 40% by mass, the elastic modulus after curing is high, and the embeddability in the substrate unevenness may be lowered, and it becomes difficult to control the storage elastic modulus after curing. On the other hand, when the content is 95% by mass or more, the elastic modulus after curing is low and the reliability may be lowered, and it becomes difficult to control the storage elastic modulus after curing.

  The weight average molecular weight of the high molecular weight component is preferably 2 to 1,000,000, more preferably 10 to 900,000, and still more preferably 20 to 800,000. If the weight average molecular weight is less than 20,000, there is a possibility that the strength and flexibility in sheet form and film form will decrease and tackiness will increase. If it exceeds 1,000,000, the solubility in the solvent will decrease. Workability tends to be poor.

  In the adhesive sheet of the present invention, since the storage elastic modulus after curing is 6 MPa or more at 150 ° C. and less than 5 MPa at 170 ° C., the filler content is preferably 5% by mass or less based on the resin, It is more preferable not to contain.

  Examples of the high molecular weight component include polyamide resin, polyimide resin, polyamideimide resin, and acrylic copolymer, but a weight average molecular weight containing 0.5 to 6% by mass of glycidyl acrylate or glycidyl methacrylate which is incompatible with the epoxy resin. It is preferable that it is an epoxy-group-containing acrylic copolymer whose is 500,000 or more.

  The epoxy group-containing acrylic copolymer having a weight average molecular weight of 0.5 to 6% by mass including glycidyl acrylate or glycidyl methacrylate is not particularly limited, and is trade name HTR- manufactured by Nagase Chemtech Co., Ltd. 860P-3DR or the like can be used.

  When the functional group monomer is carboxylic acid type acrylic acid or hydroxyl group type hydroxymethyl (meth) acrylate, the crosslinking reaction is likely to proceed, gelling in the varnish state, and increasing the degree of curing in the pre-curing state This is not preferable because there is a problem such as a decrease in adhesive strength due to.

  Moreover, the quantity of the glycidyl (meth) acrylate used as a functional group monomer shall be 2-6 mass% copolymer ratio. If it is 2% by mass or less, the adhesive force may be reduced, and if it is 6% by mass or more, gelation may occur. In addition, glycidyl (meth) acrylate means glycidyl acrylate, glycidyl methacrylate, and mixtures thereof.

  The balance can be ethyl (meth) acrylate or butyl (meth) acrylate or a mixture of both, but the mixing ratio is determined in consideration of the glass transition temperature of the copolymer (hereinafter abbreviated as Tg), and Tg is It is preferably −10 ° C. or higher. When Tg is less than −10 ° C., the tackiness of the adhesive layer in the pre-curing state is increased, and the handleability may be deteriorated. The polymerization method is not particularly limited, and pearl polymerization, solution polymerization and the like can be used.

  The low molecular weight polymer used in the present invention preferably contains a thermosetting resin in order to have good adhesive force. Examples of such compounds include epoxy resins, cyanate resins, bismaleimide resins, phenol resins, urea resins, melamine resins, alkyd resins, acrylic resins, unsaturated polyester resins, diaryl phthalate resins, silicone resins, resorcinol formaldehyde resins, From xylene resin, furan resin, polyurethane resin, ketone resin, triaryl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triaryl trimellitate, cyclopentadiene Examples include synthesized resins and thermosetting resins by trimerization of aromatic dicyanamide. Among these, an epoxy resin, a cyanate resin, and a bismaleimide resin are preferable, and an epoxy resin is more preferable in that an excellent adhesive force can be given at a high temperature. In addition, these thermosetting resins can be used individually or in combination of 2 or more types.

  The low molecular weight polymer of the present invention is not particularly limited as long as the softening point measured by ring and ball is 50 ° C. or higher. For example, the product name Epicoat 1001, 1002, 1003, 1055, manufactured by Yuka Shell Epoxy Co., Ltd. 1004, 1004AF, 1007, 1009, 1003F, 1004F, manufactured by Dow Chemical Japan Co., Ltd. E. R. 661, 662, 663U, 664, 664U, 667, 642U, 672U, 673MF, 668, 669 and other bisphenol A type epoxy resins, manufactured by Toto Kasei Co., Ltd., bisphenol F type epoxy resins such as YDF-2004, Japan Made by Kayaku Co., Ltd., phenol novolac type epoxy resin such as trade name EPPN-201, made by Yuka Shell Epoxy Co., Ltd., trade name Epicoat 180S65, manufactured by Ciba Specialty Chemicals, trade name Araldite ECN1273, 1280, 1299, Product name YDCN-701, 702, 703, 704, Nippon Kayaku Co., Ltd., product name EOCN-1020, 102S, 103S, 104S, Sumitomo Chemical Co., Ltd., product name ESCN -195X, 200L, 220, etc. Epoxy resin, manufactured by Yuka Shell Epoxy Co., Ltd., trade names Epon 1031S, Epicoat 1032H60, 157S70, Nippon Kayaku Co., Ltd., trade names EPPN501H, 502H, etc., multifunctional epoxy resins, manufactured by Ciba Specialty Chemicals, Inc. Examples include, but are not limited to, hetero ring-containing epoxy resins such as Araldite PT810.

  The adhesive sheet for semiconductor of the present invention may contain a curing agent that cures the thermosetting component. As such a hardening | curing agent, a phenol resin is mentioned, for example. The phenol resin is not particularly limited, and has a water absorption of 2% by mass or less after being put into a constant temperature and humidity chamber of 85 ° C. and 85% RH for 48%, and heated at 350 ° C. measured with a thermogravimetric analyzer (TGA). A material having a mass reduction rate (temperature increase rate: 5 ° C./min, atmosphere: nitrogen) of less than 5% by mass can be used.

  Such a phenol resin is obtained by reacting a phenol compound and a xylylene compound which is a divalent linking group in the presence of no catalyst or an acid catalyst. Typical examples of the phenol resin thus produced include the Millex XLC-series and XL series manufactured by Mitsui Chemicals.

  Moreover, a hardening accelerator can also be added to the adhesive sheet for a semiconductor of the present invention. There are no particular limitations on the curing accelerator, and various imidazoles can be used. Examples of imidazoles include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, and the like. Two or more kinds can be used in combination.

  0.003-5 mass parts is preferable with respect to 100 mass parts of total amounts with an epoxy resin and a phenol resin, and, as for the addition amount of a hardening accelerator, 0.005-3 mass parts is more preferable. When the addition amount is less than 0.003 parts by mass, the curability tends to be inferior, and when it exceeds 5 parts by mass, the storage stability tends to decrease.

  In addition, various coupling agents can be added to the semiconductor adhesive sheet of the present invention in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and silane-based coupling agents are most preferable.

  There is no restriction | limiting in particular as a silane coupling agent, For example, vinyl silanes, such as vinyltrichlorosilane, vinyltris ((beta) -methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane, (gamma) -methacryloxypropyl trimethoxysilane , Γ-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyl-trimethoxysilane, methacryloylsilanes such as methyltri (methacryloyloxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- Contains epoxy groups such as glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, methyltri (glycidyloxy) silane Orchids, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltri Methoxysilane, 3-aminopropylmethyldiethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyl-tris (2-methoxy-ethoxy-ethoxy) silane, N-methyl-3-aminopropyltrimethoxysilane, tri Aminosilanes such as aminopropyl-trimethoxysilane, 3-4,5-dihydroimidazol-1-yl-propyltrimethoxysilane, amyltrichlorosilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, 3 -Merca Mercaptosilanes such as topropyl-methyldimethoxysilane, urea-bonded silanes such as 3-ureidopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, trimethylsilyl isocyanate, dimethylsilyl isocyanate, methylsilyl triisocyanate, vinylsilyl triisocyanate Isocyanate group-containing silanes such as phenylsilyl triisocyanate, tetraisocyanate silane, ethoxysilane isocyanate, 3-chloropropyl-methyldimethoxysilane, 3-chloropropyl-dimethoxysilane, 3-cyanopropyl-triethoxysilane, hexamethyldi Silazane, N, O-bis (trimethylsilyl) acetamide, methyltrimethoxysilane, methyltriethoxysilane, ethyltri Chlorosilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, N-β (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane, octadecyl Dimethyl [3- (trimethoxysilyl) propyl] ammonium chloride, γ-chloropropylmethyldichlorosilane, γ-chloropropylmethyldimethoxysilane, γ-chloropropylmethyldiethoxysilane, etc. can be used, and one of these Or 2 or more types can also be used together.

  It is preferable that the addition amount of a coupling agent shall be 0.1-10 mass parts with respect to the total 100 mass parts of resin from the effect, heat resistance, and cost.

  Furthermore, an ion scavenger may be added to the semiconductor adhesive sheet (adhesive composition) in order to adsorb ionic impurities and improve insulation reliability during moisture absorption. The ion scavenger is not particularly limited, and a compound known as a copper damage inhibitor to prevent copper ionization and dissolution, for example, a triazine thiol compound, a bisphenol-based reducing agent, and the like can be used. Inorganic ion adsorbents such as zirconium-based and antimony bismuth-based magnesium aluminum compounds can also be used.

  The addition amount of the ion scavenger is preferably 1 to 10 parts by mass from the effect of addition, heat resistance and cost.

  Although there is no restriction | limiting in particular in the weight average molecular weight of the low molecular weight polymer | macromolecule of this invention, When it is less than 10,000, it is a liquid of a low viscosity in many cases, and there exists a possibility of reducing the rupture property of an adhesive sheet. On the other hand, if it exceeds 100,000, there is a possibility that the breakability of the adhesive sheet is lowered due to the entanglement of molecules between the resins as the molecular weight increases. Therefore, the weight average molecular weight of the low molecular weight polymer of the present invention is preferably 0.1 to 100,000, more preferably 0.2 to 10,000, and 0.3 to 50,000. Is more preferable.

  The adhesive sheet for semiconductors of the present invention can be obtained by dissolving or dispersing the adhesive sheet for semiconductors of the present invention in a solvent to form a varnish, coating and heating on a support film, and removing the solvent.

  As the support film, a plastic film such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film can be used. It can also be processed and used. The support film can be peeled off at the time of use and only the adhesive layer can be used, or it can be used together with the support film and removed later.

  The varnishing solvent is not particularly limited, but considering the volatility during film production, methyl ethyl ketone, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, xylene, butyl cellosolve, methanol, ethanol, It is preferable to use a solvent having a relatively low boiling point such as 2-methoxyethanol. For the purpose of improving the coating properties, a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone can be added.

  As a method for applying the varnish to the support film, a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. .

The thickness of the adhesive layer is preferably 1 to 40 μm. When the thickness is less than 1 μm, film formability is difficult, and when it exceeds 40 μm, it is not economical.
In addition, two or more adhesive layers in the adhesive member can be bonded together in order to obtain a desired thickness. In this case, it is necessary to have a bonding condition that does not cause peeling between the adhesive layers.

  Moreover, said adhesive sheet is used also as a dicing tape integrated adhesive sheet previously bonded with the dicing tape. In this case, the efficiency of the operation can be improved in that the laminating process on the wafer is performed only once.

  Examples of the dicing tape used in the present invention include a plastic film such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. These can be used in a multilayer structure with other materials.

  Further, surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment may be performed as necessary. The dicing tape needs to have adhesiveness, and an adhesive layer may be provided on one side of the dicing tape. This can be formed by applying and drying a resin composition having an appropriate tack strength obtained by adjusting the ratio of the liquid component and the Tg of the high molecular weight component in the resin composition of the pressure-sensitive adhesive layer.

  Further, when used in manufacturing a semiconductor device, it has an adhesive force that prevents the semiconductor element from scattering during dicing, and after that, it must be peeled off from the dicing tape during pick-up. For example, separation may be difficult when the adhesive strength of the adhesive sheet or dicing tape is too high and the peel strength when they are laminated is 150 N / m or more.

  Therefore, it is preferable to appropriately adjust the tack strength of the adhesive sheet, and as a method thereof, the adhesive strength and tack strength tend to increase by increasing the fluidity of the adhesive sheet at room temperature (25 ° C.). What is necessary is just to utilize that there exists a tendency for adhesive strength and tack strength to fall, if fluidity | liquidity is reduced.

For example, when increasing fluidity, there are methods such as increasing the content of plasticizer and increasing the content of tackifier. Conversely, when the fluidity is lowered, the content of the compound may be reduced.
Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy-based diluents.

  The semiconductor adhesive sheet of the present invention may be used by itself, but can also be used as a dicing tape-integrated adhesive sheet in which the adhesive sheet of the present invention is laminated on a conventionally known dicing tape. The peel strength of the dicing tape integrated adhesive sheet obtained by laminating the adhesive sheet and the dicing tape is preferably 150 N / m or less, and more preferably 50 N / m or less.

  As a method of laminating the adhesive sheet on the dicing tape, in addition to printing, a pre-manufactured adhesive sheet can be pressed on the dicing tape and a hot roll laminating method. However, it can be continuously manufactured and is hot in terms of efficiency. A roll laminating method is preferred.

  The film thickness of the dicing tape is not particularly limited, and is appropriately determined based on the knowledge of those skilled in the art depending on the thickness of the adhesive sheet and the application of the dicing tape-integrated adhesive sheet. 60-200 micrometers is preferable at the point with the handleability of a film, and 70-170 micrometers is more preferable.

  The semiconductor mounting support member can be used without being limited by the substrate material such as a lead frame having a die pad, a ceramic substrate or an organic substrate. As the ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used.

  As an organic substrate, an FR-4 substrate in which an epoxy resin is impregnated in a glass cloth, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate using a polyimide film as a base material, or the like is used. Can do.

The shape of the wiring may be a single-sided wiring, double-sided wiring, or multilayer wiring structure, and a through hole or a non-through hole that is electrically connected may be provided as necessary.
Further, when the wiring appears on the outer surface of the semiconductor device, it is preferable to provide a protective resin layer.

  As a method of attaching the adhesive member to the support member, a method of cutting the adhesive member into a predetermined shape and thermocompression bonding the cut adhesive member to a desired position of the support member is generally limited. Not what you want.

  As the structure of the semiconductor device, the electrode of the semiconductor element and the support member are connected by wire bonding, and the electrode of the semiconductor element and the support member are connected by inner lead bonding of tape automated bonding (TAB). There are structures and the like, but the structure is not limited to these, and any case is effective.

As the semiconductor element, a general semiconductor element such as an IC, LSI, VLSI can be used.
The thermal stress generated between the semiconductor element and the supporting member is significant when the area difference between the semiconductor element and the supporting member is small. However, the semiconductor device uses a low elastic modulus adhesive member to relieve the thermal stress and increase reliability. Ensure sex.

These effects appear very effectively when the area of the semiconductor element is 70% or more of the area of the support member.
In such a semiconductor device having a small area difference between the semiconductor element and the support member, the external connection terminals are often provided in an area.

  In addition, as a characteristic of the adhesive member (adhesive sheet for semiconductor) of the present invention, an adhesive is used in a heated process such as a process of thermocompression bonding the adhesive member to a desired position of a support member or a process of connecting by wire bonding. Volatile matter from the layer can be suppressed.

The wiring substrate used for the semiconductor mounting substrate wiring substrate can be used without being limited to the substrate material such as a ceramic substrate or an organic substrate.
As the ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used.

  As an organic substrate, an FR-4 substrate in which an epoxy resin is impregnated in a glass cloth, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate using a polyimide film as a base material, or the like is used. Can do.

Hereinafter, the present invention will be described in detail by way of examples, but the present invention is not limited to these examples.
<Example and Comparative Example Production Method>
YDCN-700-10 (trade name, manufactured by Toto Kasei Co., Ltd., epoxy resin 210, epoxy equivalent 210) as an epoxy resin, and Millex XLC-LL (trade name, manufactured by Mitsui Chemicals, Ltd., phenol resin, hydroxyl group) as a phenol resin Equivalent 175, water absorption 1.8% by mass, heating mass decrease rate at 350 ° C. 4% by mass) or LF-2882 (trade name, phenol novolac resin, manufactured by Dainippon Ink & Chemicals, Inc.), these thermosetting components 200 mass Parts, A-189 (manufactured by Nihon Unicar Co., Ltd.) and A-1160 (manufactured by Nihon Unicar Co., Ltd.) as the silane coupling agent, SO-C2 (trade name, manufactured by Admatech Co., Ltd.) as the filler, Silica, specific surface area 7 m ² / g, average particle size 0.4 to 0.6 μm) or Aerosil R972 (Nippon Aerosil Co., Ltd.) ) Cyclohexanone was added to a composition comprising a product name, silica, and an average particle size of 0.016 μm, and the mixture was stirred and mixed, and further kneaded for 90 minutes using a bead mill.

  Acrylic rubber HTR-860P-3 (trade name, manufactured by Nagase Chemtech Co., Ltd., weight average molecular weight 1 million) containing 2 to 6% by mass of glycidyl acrylate or glycidyl methacrylate, and Curazole 2PZ-CN (Shikoku Chemicals) as a curing accelerator (Product name, 1-cyanoethyl-2-phenylimidazole) was mixed and stirred and vacuum degassed.

  The varnish was applied on a polyethylene terephthalate film having a thickness of 38 μm, and dried by heating at 140 ° C. for 5 minutes to form a coating film in a B stage state (before curing) with a film thickness of 20 μm. The prepared adhesive sheet was produced. Similarly, each adhesive sheet shown in Table 1 was prepared. Table 1 shows the parts by mass of Examples 1 and 2 and Comparative Examples 1 to 3.

Using a dynamic viscoelasticity measuring device (trade name DVE-V4, manufactured by Rheology Co., Ltd.), the adhesive sheet is thermally cured at 170 ° C. for 3 hours, a tensile load is applied, a frequency of 10 Hz, a temperature increase rate of 3 The measurement was performed in a temperature-dependent measurement mode in which measurement was performed at 10 ° C./min up to 25 to 300 ° C.
The storage elastic modulus at 150 ° C. and 175 ° C. was measured. At 150 ° C., 6 MPa or more was evaluated as “◯”, and the others were evaluated as “×”.

  The adhesive force measurement in a short time was performed by attaching an adhesive sheet having a size of 5 × 5 mm to a silicon wafer (5 × 5 mm mouth) at 70 ° C., and applying the adhesive sheet attached to the silicon wafer to a pressure of 0.4 MPa for a time. After pressure bonding to a silicon wafer for 1 second at a temperature of 150 ° C. and curing on a 150 ° C. hot plate for 2 minutes, die shear strength measurement (Dage, measurement temperature 180 ° C.) was performed. If it was 0.1 MPa or more, it was evaluated as ◯, and if it was less than that, it was rated as x.

  For adhesion, a 5 × 5 mm size adhesive sheet is bonded to a semiconductor chip (5 × 5 mm size) using a hot roll laminator at a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min. Then, it is pressure-bonded to an organic substrate (a substrate in which AUS308 is applied to FR-4 in which an epoxy resin is impregnated in glass cloth) under the conditions of pressure 0.1 MPa, time 5 seconds, and temperature 120 ° C., and cured at 170 ° C. for 3 hours. After that, the adhesive strength between the adhesive sheet and the substrate after moisture absorption treatment (temperature 85 ° C., humidity 85% atmosphere, 48 hours) was measured by die shear strength measurement (Dage, measurement temperature 180 ° C.) under the condition of 265 ° C. Went. The adhesion strength after moisture absorption treatment / adhesion strength before moisture absorption treatment was 0.7 or more, and less than 0.7 was x.

Regarding the filling property, the hot roll laminator was applied to the adhesive film (10 × 10 mm) obtained from the adhesive sheet having a size of 10 × 10 mm at a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min. And then stuck to a substrate having 5 μm irregularities under conditions of pressure 0.2 MPa, time 2 seconds, temperature 120 ° C., and then cured at 170 ° C. for 30 minutes. Thereafter, resin sealing was performed to prepare an evaluation package. Initial fillability was observed. If the embedding was sufficient, it was marked as ◯, and if embedding was insufficient, it was marked as x.
If an adhesive sheet having a sheet thickness of 1 μm can be produced, it was evaluated as “good”, and if it was not possible, it was evaluated as “poor”.

As shown in Table 2, in Examples 1 and 2, it is clear that the storage elastic modulus after curing satisfies the specified value, the initial adhesive force is high, and an adhesive sheet having a thickness of 1 μm can be produced. .
On the other hand, since Comparative Example 1 has a large amount of rubber component with respect to the curing agent, the storage elastic modulus after curing is good at 170 ° C., but at 150 ° C., the result is lower than the specified value and the initial adhesive force is also low. It was. Moreover, since it contains a filler, it is difficult to produce an adhesive sheet having a thickness of 1 μm.

Since Comparative Example 2 contained a large amount of filler with respect to the rubber component, the storage elastic modulus after curing satisfied the specified value at 150 ° C, but the result was higher than the specified value at 170 ° C. Moreover, since it contains a filler, it is difficult to produce an adhesive sheet having a thickness of 1 μm.
Since the comparative example 3 had few rubber components with respect to a hardening | curing agent, the storage elastic modulus after hardening was a result higher than a regulation value at 170 degreeC.
Since the comparative example 4 had few hardening accelerators with respect to a hardening | curing agent, the storage elastic modulus after hardening was lower than a regulation value at 150 degreeC, and also the result was also lower than a regulation value.

Claims (10)

  A semiconductor adhesive sheet having a storage elastic modulus of 6 MPa or more and 170 ° C. and less than 5 MPa as measured by dynamic viscoelasticity at 150 ° C. after curing.   An adhesive sheet for a semiconductor having an adhesive layer having an adhesive force of 0.1 MPa or more after curing at 150 ° C. for 2 minutes after thermocompression bonding to a silicon wafer.   The adhesive sheet for semiconductor according to claim 2, wherein the adhesive layer has a thickness of 1 to 20 μm or less.   The semiconductor adhesive sheet according to claim 2 or 3, wherein the adhesive layer contains a high molecular weight component.   The adhesive sheet for semiconductor according to claim 4, wherein the high molecular weight component has a Tg of −10 to 60 ° C. and a weight average molecular weight of 2 to 1,000,000.   The adhesive sheet for a semiconductor according to claim 4 or 5, comprising 40 to 95% by mass of the high molecular weight component.   The adhesive sheet for a semiconductor according to any one of claims 2 to 6, wherein the adhesive layer does not contain a filler.   The adhesive sheet for semiconductors which contains the low molecular weight polymer in the adhesive sheet for semiconductors in any one of the said Claims 1-7.   The adhesive sheet for semiconductor according to claim 8, wherein the low molecular weight polymer has a weight average molecular weight of 0.1 to 100,000.   A dicing integrated semiconductor adhesive sheet obtained by laminating the semiconductor adhesive sheet according to any one of claims 1 to 10 and a dicing tape.