TW201900797A - Cleaved crystal film - Google Patents

Abstract

A dicing die-bonding film is provided in which the die-bonding film is excellent in pick-up suitability and die-bonding suitability, and floats are less likely to occur between the die-bonding film and the adhesive layer at the time of normal temperature expansion and thereafter. A dicing die-bonding film comprises: a dicing tape having a substrate and an adhesive layer laminated on the substrate; and a die-bonding film laminated on the adhesive layer in the dicing tape; in addition, a storage elastic modulus E' at 25 DEG C of the aforementioned die-bonding film measured under the condition of a frequency of 10 Hz is 3 to 5 GPa.

Description

Cut crystal

The invention relates to a cut crystal and sticky crystal film. More specifically, the present invention relates to a die-cut die-bond film that can be used in the manufacturing process of a semiconductor device.

Previously, in the manufacture of semiconductor devices, a dicing tape or a dicing film was sometimes used. The dicing tape is in the form of an adhesive layer provided on the substrate, and it is used for arranging a semiconductor wafer on the adhesive layer and singulating (cutting) the semiconductor wafer without singling. This method is used for fixed applications (for example, refer to Patent Document 1). The cut crystal sticky film is provided on the adhesive layer of the cut crystal strip in a peelable manner. In the manufacture of a semiconductor device, a semiconductor wafer is held on a die-bonding film of a die-cutting die-bonding film, and the semiconductor wafer is cut to become individual semiconductor wafers. After that, for example, the semiconductor wafer and the die-bond film are picked up from the dicing tape and peeled together after a cleaning step, and the semiconductor wafer is temporarily fixed (stick-bonded) to an adherend such as a lead frame through the die-bond film. Therefore, it is important for the die-bonding film of the die-cutting die-bonding film to have excellent peelability (pick-up suitability) of the self-cutting band when picking up, and excellent adhesion to the adherend (die-fitting property) during sticking. In the case where a die-bonding film having a die-bonding film is laminated on the die-cutting belt, and the semiconductor wafer is sliced while the die-bonding film is maintained, the die-bonding film and the semiconductor wafer must be cut at the same time. . However, in the conventional crystal cutting method using a diamond knife, there is concern about the adhesion between the die-bonding film and the crystal-cutting band due to the influence of the heat generated during the crystal cutting, the fixation of the semiconductor wafers to each other due to the generation of cutting chips, and The adhesion of cutting chips to the side of the semiconductor wafer, etc., must slow down the cutting speed, resulting in an increase in cost. Therefore, in recent years, the following method has been proposed: forming grooves on the surface of a semiconductor wafer, and then performing back surface grinding to obtain each semiconductor wafer (sometimes referred to as "DBG (Dicing Before Grinding)") ( For example, refer to Patent Document 2); or irradiate laser light to a predetermined division line of a semiconductor wafer to form a modified region, whereby a semiconductor wafer can be easily divided according to the predetermined division line, and then the semiconductor wafer can be attached to a cut crystal The die-bond film is then expanded at a low temperature (for example, -25 to 0 ° C) (hereinafter sometimes referred to as "cold expansion"), thereby breaking (fracture) the semiconductor wafer and the die-bond film together. Thus, each semiconductor wafer (semiconductor wafer with a sticky crystal film) is obtained (for example, refer to Patent Document 3). It is a so-called method called Stealth Dicing (registered trademark). In addition, a method is also known in which the obtained semiconductor wafers are also attached to the dicing die-bonding film in the DBG, and then the dicing tape is cold-expanded, thereby cutting the dicing die film to a size equivalent to that of each semiconductor wafer. To obtain each semiconductor wafer with a sticky crystal film. As described above, in the case where the viscous crystal film is cut by cold expansion, it is important for the viscous film of the cut crystal viscous film to have excellent cutting properties during cold expansion. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2011-216563 [Patent Literature 2] Japanese Patent Laid-Open No. 2003-007649 [Patent Literature 3] Japanese Patent Laid-Open No. 2009-164556 Bulletin

[Problems to be Solved by the Invention] After cutting the viscous crystal film in DBG or invisible crystal cutting, etc., the crystal crystal film is expanded near normal temperature (hereinafter sometimes referred to as "normal temperature expansion"). The distance between the semiconductor wafers of the die-bonding film is widened, and then the outer peripheral portion of the semiconductor wafer is thermally contracted (hereinafter sometimes referred to as "heat shrinkage"), and the semiconductor wafers are fixed while the interval between the semiconductor wafers is widened. It is easy to pick up each of the obtained semiconductor wafers with an adhesive film. In recent years, due to the demand for higher capacitance of semiconductors, the multilayering of circuit layers or the thinning of silicon layers has continued to develop. However, since the thickness (total thickness) of the circuit layer is increased due to the multilayering of the circuit layer, there is a tendency that the ratio of the resin contained in the circuit layer is increasing. The difference in the linear expansion ratio becomes significant, and the semiconductor wafer is liable to warp. Therefore, especially for a semiconductor wafer with a multilayered circuit layer with a die-bond film obtained after slicing, the interface between the adhesive layer and the die-bond film at the die-cut zone is at room temperature expansion and after expansion (for example, to During picking up, etc.) Bulging (peeling) tends to occur. The present invention has been made in view of the above problems, and an object thereof is to provide a pick-up film with excellent pick-up property and sticky-crystal property, and it is difficult to produce a bump between the sticky film and the adhesive layer during and after expansion at room temperature. Cut crystal sticky film. [Technical means to solve the problem] The present inventors and other people made intensive research in order to achieve the above purpose, and found that if the storage elastic modulus E 'of the viscous crystal film at 25 ° C is a crystalline band in a specific range, In the case of a semiconductor wafer with a multilayered circuit layer, the pick-up property and sticky-crystal property of the die-bond film are also excellent, and it is difficult to generate bulges during and after expansion at room temperature. The present invention has been completed based on these findings. That is, the present invention provides a crystal-cut adhesive film, which includes a crystal-cut tape having a substrate and an adhesive layer laminated on the substrate, and a crystal-stick film laminated on the adhesive layer of the crystal-cut tape. And, the storage elastic modulus E ′ at 25 ° C. of the above-mentioned viscous crystal film measured at a frequency of 10 Hz is 3 to 5 GPa. For the crystal-cut viscous film of the present invention, the storage elastic modulus E ′ at 25 ° C. measured at a frequency of 10 Hz is set to be the same as that of the previous viscous film. The number is higher than 3 GPa. When stress is applied in a relatively slow area at room temperature, the sticky film is difficult to move in the vertical direction (thickness direction). When a non-multilayered semiconductor wafer is used, Needless to say, even when a semiconductor wafer with a multilayered circuit layer is used, it is difficult to make the die-bond film self-cutting during expansion at room temperature and after expansion (such as the period from the cleaning step to the pick-up). The rise of the crystal band. However, when the singularized viscous film is intentionally picked up and peeled from the tangential band, stress is applied to a relatively fast area, so that it can be easily picked up. In addition, by controlling the storage elastic modulus E 'at 25 ° C. measured at a frequency of 10 Hz of the viscous film to be less than 5 GPa, the viscous film has excellent wettability to the adherend during the viscous process. The die attachability is excellent, and the die attach (temporarily fixed) of the semiconductor wafer to the adherend can be performed well. In this way, if the crystal-cut sticky film of the present invention is used, the storage elastic modulus E ′ at 25 ° C. measured under the condition of a frequency of 10 Hz is 3 GPa or more, so that the stress applied in a relatively slow region can be satisfied. In this case, there are both a characteristic that it is difficult to generate a bulge, and a characteristic that is easy to pick up in picking up when a stress is applied in a faster speed region. Also, in the cut crystal sticky film of the present invention, it is preferable that the storage elastic modulus E ′ at -15 ° C. of the above sticky film measured at a frequency of 10 Hz is 4 to 7 GPa. By setting the storage elastic modulus E 'at -15 ° C measured at a frequency of 10 Hz of the viscous film to be 4-7 GPa higher than the same storage elastic modulus of the previous viscous film Within the range, when stress is applied at low temperature, it is difficult for the die-bond film to move in the vertical direction (thickness direction). When using a non-multilayered semiconductor wafer, it is needless to say that even when a multilayered semiconductor is used for the circuit layer In the case of a wafer, during the cold expansion and after the expansion (for example, until the temperature returns to normal temperature, etc.), it is also difficult for the sticky crystal film to generate a bulge of the self-cutting band. In addition, it is possible to easily cut the viscous crystal film by cold expansion. Therefore, if a die-cut die-bond film having this structure is used, even when a semiconductor wafer having a multilayered circuit layer is used, the cut-off property, pick-up property, and die-stick property of the die-bond film during cold expansion are excellent, and It is difficult to produce bulges during cold expansion, normal temperature expansion, and after expansion. In addition, it is preferable that the storage elastic modulus E 'of the crystal-cut adhesive film of the present invention measured at 150 ° C under a condition of a frequency of 10 Hz after heat curing shows a storage elastic modulus E' of 20 to 200 MPa, and a frequency of 10 The storage elastic modulus E 'measured at 250 ° C under the condition of Hz shows 20 to 200 MPa. When a semiconductor wafer is bonded to an adherend through a die-bonding film, and then the following wire bonding step is performed, in the wire-bonding step, due to the heat generated by the heating during wire bonding, the die-bond film may sometimes When the temperature is raised to about 150 ° C, the storage elastic modulus E 'at 150 ° C measured at a frequency of 10 Hz after thermal curing of the above-mentioned viscous film shows 20 to 200 MPa. The viscous film after heat curing has Appropriate hardness, even when the temperature rises to about 150 ° C. in the wire bonding step, it is difficult to move the semiconductor wafer due to the impact of the wire bonding, and it is easy to conduct the force to the wire bonding pad, and the wire bonding can be appropriately performed. In addition, as a reliability evaluation of semiconductor-related parts, a humidity-resistance reflow test in which semiconductor-related parts are heated to about 250 ° C. is usually performed by measuring 250 at a frequency of 10 Hz after the above-mentioned viscous film is thermally hardened. The storage elastic modulus E ′ at ℃ shows 20 to 200 MPa. Even when heated to about 250 ° C. in a moisture resistance reflow test, it is difficult to cause the adhesive film to peel off from the adherend. That is, the two storage elastic modulus E 'after the thermosetting of the viscous crystal film are shown in the above ranges, respectively, and the adhesion stability after the semiconductor wafer is fixed can be made excellent. Moreover, in the cut crystal sticky film of the present invention, it is preferable that the storage elastic modulus G 'of the sticky film at 130 ° C measured at a frequency of 1 Hz is 0.03 to 0.7 MPa. As a result, it is more difficult for the bump of the wafer to be generated during sticking. In addition, it is easier to control the storage elastic modulus E 'at 25 ° C within the above range, so there is a tendency that it is difficult to produce a bulge during cold expansion, normal temperature expansion, and after expansion, and it is difficult to adhere to the adherent crystals. The suitability is further improved, and the semiconductor wafer can be satisfactorily bonded to the adherend. Moreover, in the cut crystal sticky film of the present invention, it is preferable that the loss elastic modulus G '' measured at 130 ° C of the above sticky film at a frequency of 1 Hz is 0.01 to 0.1 MPa. Thereby, it is possible to further make it difficult for the bump of the wafer to be generated during the die bonding. [Effects of the Invention] For the cut crystal sticky film of the present invention, the pick-up film and the sticky film are excellent, and it is difficult to produce a bulge between the sticky film and the adhesive layer during and after expansion at room temperature. . In particular, when a semiconductor wafer having a multilayered circuit layer is used, it is difficult to generate a bump.

[Cut crystal sticky film] The cut crystal sticky film of the present invention includes a cut crystal band having a substrate and an adhesive layer laminated on the above substrate, and an adhesive layer laminated on the above adhesive layer of the cut crystal band. Crystal film. An embodiment of the die-bonding film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of a cut-to-slice adhesive film according to the present invention. As shown in FIG. 1, the die-cut die-bonding film 1 includes a die-cut tape 10 and a die-bond film 20 laminated on the adhesive layer 12 of the die-cut tape 10. The user can use the expansion step in the semiconductor wafer process. The dicing die-bonding film 1 has, for example, a disk shape having a size corresponding to a semiconductor wafer to be processed in a semiconductor device manufacturing process. The dicing tape 10 of the dicing die-casting film 1 has a laminated structure including a substrate 11 and an adhesive layer 12. (Substrate) The substrate 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die-casting film 1. Examples of the substrate 11 include a plastic substrate (particularly, a plastic film). The substrate 11 described above may be a single layer, or may be a laminate of the same or different types of substrates. Examples of the resin constituting the plastic substrate include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, and embedded polymers. Segment copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionic polymer, ethylene- (meth) acrylic copolymer, ethylene- (methyl Based) polyolefin resins such as acrylic (random, alternating) copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers; polyurethanes; polyethylene terephthalate (PET), Polyethylene naphthalate, polybutylene terephthalate (PBT), and other polyesters; polycarbonate; polyimide; polyetheretherketone; polyetherimide; aromatic polyimide; Polyamines such as aromatic polyamines; polyphenylene sulfide; fluororesins; polyvinyl chloride; polyvinylidene chloride; cellulose resins; polysiloxane resins, etc. These resins may be used alone or in combination of two or more. In a case where the adhesive layer 12 is of a radiation-curable type as described below, the base material 11 preferably has radiation permeability. When the substrate 11 is a plastic film, the plastic film may be non-aligned, or may be aligned in at least one direction (uniaxial direction, biaxial direction, etc.). When aligned in at least one direction, the plastic film can be thermally contracted in the at least one direction. If it has heat shrinkability, the outer peripheral portion of the semiconductor wafer of the dicing tape 1 can be thermally shrunk, thereby being able to be fixed in a state where the distance between the individual semiconductor wafers with a sticky crystal film is widened, so it can be fixed. The semiconductor wafer can be easily picked up. In order to make the base material 11 and the dicing tape 1 have isotropic heat shrinkability, it is preferable that the base material 11 is a biaxial alignment film. Furthermore, the plastic film aligned in the at least one direction can be obtained by extending the non-extended plastic film in the at least one direction (uniaxial extension, biaxial extension, etc.). The heat shrinkage rate in the heat treatment test of the substrate 11 and the cut crystal strip 1 at a heating temperature of 100 ° C. and a heating time of 60 seconds is preferably 1 to 30%, and more preferably 2 to 25%. It is preferably 3 to 20%, and particularly preferably 5 to 20%. The thermal shrinkage ratio is preferably a thermal shrinkage ratio in at least one of a MD (Machine Direction) direction and a TD (Transverse Direction) direction. As the side surface of the adhesive layer 12 of the base material 11, in order to improve the adhesion and retention with the adhesive layer 12, for example, a corona discharge treatment, a plasma treatment, a sand mat processing treatment, and ozone exposure can be performed. Physical treatments such as treatment, flame exposure treatment, high-voltage electric shock exposure treatment, ionizing radiation treatment, chemical treatments such as chromic acid treatment, and surface treatments such as easy subsequent treatment by a coating agent (primer). In addition, in order to provide antistatic ability, a conductive vapor-deposited layer containing a metal, an alloy, an oxide thereof, or the like may be provided on the surface of the substrate 11. The thickness of the base material 11 is preferably 40 μm or more, and more preferably 50 from the viewpoint of ensuring the strength at which the base material 11 can function as a support for the cut crystal band 10 and the cut crystal adhesive film 1. μm or more, more preferably 55 μm or more, and particularly preferably 60 μm or more. Moreover, from the viewpoint of achieving moderate flexibility in the dicing tape 10 and the dicing die-bonding film 1, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 150 μm or less. (Adhesive Layer) The adhesive layer 12 is formed of an adhesive. The adhesive that forms the adhesive layer 12 may be an adhesive (adhesion-reducing adhesive) that can intentionally weaken the adhesive force by an external action such as radiation irradiation or heating, or an adhesive force that hardly or completely does not The adhesive (non-reduced adhesive) that is weakened due to external effects can be appropriately selected according to the singulation method or conditions of the semiconductor wafer that is singulated using the dicing die-bond film 1. In the case of using the adhesion-reducing adhesive as the above-mentioned adhesive, the state and performance of the adhesive layer 12 exhibiting a relatively high adhesive force can be flexibly used in the manufacturing process or the use process of the cut crystal adhesive film 1 The state of relatively low adhesion. For example, when the adhesive layer 12 is bonded to the adhesive layer 12 of the dicing tape 10 during the manufacturing process of the dicing adhesive film 1, or when the dicing adhesive film 1 is used in the dicing step, the adhesive layer is used. 12 shows a relatively high adhesive state, which can suppress and prevent the adherence of the adherend such as the adhesive film 20 from the adhesive layer 12, and on the other hand, it is used to cut the adhesive film 1 afterwards. In the picking-up step of the wafer 10 for picking up the semiconductor wafer with the adhesive crystal film, the adhesive force can be easily picked up by weakening the adhesive force of the adhesive layer 12. Examples of such an adhesion-reducing adhesive include radiation-curable adhesives (radiation-curable adhesives) and heat-foaming adhesives. As the adhesive for forming the adhesive layer 12, one type of adhesion-reducing adhesive may be used, or two or more types of adhesion-reducing adhesive may be used. In addition, the entire adhesive layer 12 may be formed of an adhesion-reducing adhesive, or a part thereof may be formed of an adhesion-reducing adhesive. For example, when the adhesive layer 12 has a single-layered structure, the entire adhesive layer 12 may be formed of an adhesion-reducing adhesive, or a specific part of the adhesive layer 12 (for example, as a bonding target of a semiconductor wafer) The central region of the region) is formed of an adhesion-reducing adhesive, and the other parts (for example, the bonding target region of the wafer ring and the region outside the central region) are formed of the non-reduction-type adhesive. As the radiation-curing adhesive, for example, an adhesive that is hardened by irradiating electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used, and a hardener that is hardened by irradiation of ultraviolet rays can be preferably used Type of adhesive (UV-curable adhesive). Examples of the radiation-curable adhesive include the addition of a base polymer such as an acrylic polymer, and a radiation polymerizable monomer component or oligomer component having a functional group such as a radiation polymerizable carbon-carbon double bond. Radiation hardening adhesive. The acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth) acrylfluorene group in the molecule) as a structural unit of the polymer. The acrylic polymer is preferably a polymer containing the largest number of structural units derived from a (meth) acrylate in a mass ratio. The acrylic polymer may be used alone or in combination of two or more. In the present specification, "(meth) acrylic acid" means "acrylic acid" and / or "methacrylic acid" (either one of "acrylic acid" and "methacrylic acid"), and the other the same. Examples of the (meth) acrylate include hydrocarbon group-containing (meth) acrylates such as alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aryl (meth) acrylate. . Examples of the (meth) acrylic acid alkyl ester include methyl (meth) acrylate, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third butyl ester. , Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, Tridecyl ester, tetradecyl ester, cetyl ester, octadecyl ester, eicosyl ester, and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl (meth) acrylic acid, cyclohexyl ester, and the like. Examples of the aryl (meth) acrylate include a phenyl ester and a benzyl ester of (meth) acrylic acid. The (meth) acrylate may be used alone or in combination of two or more. In order for the adhesive layer 12 to appropriately exhibit basic properties derived from (meth) acrylate-derived adhesiveness, the ratio of (meth) acrylate in all monomer components used to form the acrylic polymer is preferably It is 40% by mass or more, and more preferably 60% by mass or more. The acrylic polymer may contain a structural unit derived from another monomer component that can be copolymerized with the (meth) acrylate in order to improve the cohesive force, heat resistance, and the like. Examples of the other monomer components include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, Functional monomers such as acrylamide and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, and fumaric acid. Acid, butenoic acid, etc. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and (meth) acrylic acid. 6-hydroxyhexyl ester, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethyl) (meth) acrylate Cyclohexyl) methyl ester and the like. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, and (meth) acrylamido Propanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloxynaphthalenesulfonic acid, and the like. Examples of the phosphate group-containing monomer include 2-hydroxyethylpropenyl phosphate and the like. These other monomer components may be used alone or in combination of two or more. In order for the adhesive layer 12 to appropriately exhibit basic characteristics such as the adhesion properties derived from (meth) acrylic acid ester, the ratio of the above-mentioned other monomer components among all the monomer components used to form the acrylic polymer is preferably 60 mass% or less, more preferably 40 mass% or less. The acrylic polymer may contain a polyfunctional monomer derived from a polymer component that can be copolymerized with a monomer component forming the acrylic polymer, such as a (meth) acrylate, in order to form a crosslinked structure in its polymer skeleton. Structural units. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and Pentylene glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylic acid Esters, epoxy (meth) acrylates (e.g. poly (meth) acrylate glycidyl), polyester (meth) acrylates, (meth) acrylate urethanes, etc. have (meth) in the molecule Monomers of acrylamido and other reactive functional groups. These polyfunctional monomers may be used alone or in combination of two or more. In order for the adhesive layer 12 to appropriately exhibit basic properties derived from (meth) acrylate-derived adhesiveness, the ratio of the above-mentioned multifunctional monomer in all monomer components used to form the acrylic polymer is preferred. It is 40% by mass or less, and more preferably 30% by mass or less. The acrylic polymer is obtained by polymerizing one or more monomer components including an acrylic monomer. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. The number average molecular weight of the acrylic polymer in the adhesive layer 12 is preferably 100,000 or more, more preferably 200,000 to 3 million. If the number-average molecular weight is 100,000 or more, there is a tendency that there are fewer low-molecular-weight substances in the adhesive layer, which can further suppress contamination of a die-bond film or a semiconductor wafer. The radiation-curable adhesive may contain a crosslinking agent. For example, in the case where an acrylic polymer is used as the base polymer, the acrylic polymer can be cross-linked to further reduce the low-molecular-weight substances in the adhesive layer 12. Examples of the crosslinking agent include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine compound. In the case of using a crosslinking agent, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer. Examples of the radiation-polymerizable monomer component include (meth) acrylic acid urethane, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra ( (Meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation-polymerizable oligomer component include, for example, various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The molecular weight is preferably It is about 100 ~ 30,000. The content of the above-mentioned radiation-curable monomer component and oligomer component in the radiation-curable adhesive that forms the adhesive layer 12 is, for example, 5 to 500 parts by mass, and preferably 40 to 100 parts by mass of the base polymer. ~ 150 parts by mass. In addition, as the additive-type radiation-curable adhesive, those disclosed in, for example, Japanese Patent Laid-Open No. Sho 60-196956 can be used. Examples of the radiation-hardening adhesive include intrinsic radiation hardening of a base polymer containing a functional group such as a polymerizable carbon-carbon double bond in a polymer side chain or a polymer main chain or a polymer main chain end. Type adhesive. When such an internal radiation-hardening type adhesive is used, there is a tendency that the movement of low molecular weight components in the formed adhesive layer 12 can be suppressed without changing the adhesion characteristics over time. As the base polymer contained in the intrinsic radiation-hardening adhesive, an acrylic polymer is preferred. As the above-mentioned acrylic polymer that can be contained in the internal radiation-curing adhesive, an acrylic polymer described as the acrylic polymer contained in the above-mentioned additive-type radiation-curing adhesive can be used. Examples of a method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer include, for example, a method of polymerizing (copolymerizing) a raw material monomer containing a monomer component having a first functional group to obtain acrylic polymerization After the polymerization, the acrylic polymer and the compound having a second functional group capable of reacting with the first functional group and a radiation polymerizable carbon-carbon double bond are condensed while maintaining the radiation polymerizability of the carbon-carbon double bond. Reaction or addition reaction. Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, and a hydroxyl group and an isocyanate. Group, isocyanate group and hydroxyl group. Among these, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of facilitating reaction tracking. Among them, from the standpoint of technical difficulty in producing a polymer having a highly reactive isocyanate group, and from the viewpoint of ease of production and acquisition of an acrylic polymer having a hydroxyl group, the above is preferred. The first functional group is a combination of a hydroxyl group and the second functional group is an isocyanate group. Examples of the compound having both an isocyanate group and a radiation polymerizable carbon-carbon double bond in this case include methacrylfluorenyl isocyanate, 2-methacryloxyethyl isocyanate, and isocyanate. Acid isopropenyl-α, α-dimethylbenzyl ester and the like. Examples of the acrylic polymer having a hydroxyl group include ethers derived from the above-mentioned hydroxyl-containing monomer or ethers such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether. The structural unit of a compound. The radiation-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-keto alcohol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, and Benzophenone compounds, 9-oxosulfurCompounds, camphorquinone, haloketones, fluorenylphosphine oxide, fluorenyl phosphate and the like. Examples of the α-keto alcohol-based compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylbenzene Ethyl ketone, 2-methyl-2-hydroxyphenylacetone, 1-hydroxycyclohexylphenyl ketone and the like. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2- Methyl-1- [4- (methylthio) -phenyl] -2-olinylpropane-1 and the like. Examples of the benzoin ether-based compound include benzoin diethyl ether, benzoin isopropyl ether, and anisole methyl ether. Examples of the ketal-based compound include benzophenone dimethyl ketal and the like. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalenesulfonyl chloride and the like. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone-based compound include benzophenone, benzophenone benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. As the above 9-oxysulfurExamples of compounds are 9-oxysulfur, 2-chloro-9-oxysulfur2-methyl-9-oxysulfur2,4-dimethyl-9-oxysulfurIsopropyl-9-oxysulfur, 2,4-dichloro-9-oxysulfur, 2,4-diethyl-9-oxysulfur2,4-diisopropyl 9-oxysulfurWait. The content of the photopolymerization initiator in the radiation-curable adhesive is 100 parts by mass relative to the base polymer, for example, 0. 05-20 parts by mass. The heat-foamable adhesive is an adhesive containing a component (foaming agent, thermally expandable microspheres, etc.) that expands or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include chlorofluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodimethylformamide, and barium azodicarboxylate. Nitrogen compounds; hydrazine such as p-toluenesulfonylhydrazine, diphenylhydrazone-3,3'-disulfonylhydrazine, 4,4'-oxybis (benzenesulfonylhydrazine), allylbis (sulfonhydrazine) Compounds; p-tolylsulfonyl hemiprazine, 4,4'-oxybis (benzenesulfonyl hemiprazine) and other hemicarbazide compounds; 5-thiophosphono-1,2,3,4- Triazole compounds such as thiotriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-dimethyl-N, N'-dinitroso p-xylylenediamine And other N-nitroso compounds. Examples of the thermally expandable microspheres include microspheres formed by encapsulating a substance that is easily vaporized and expanded by heating in a shell. Examples of the substance that can be easily vaporized and expanded by heating include isobutane, propane, and pentane. A thermally expandable microsphere can be produced by encapsulating a substance that is easily vaporized and expanded by heating by a coacervation method or an interfacial polymerization method, into a shell-forming substance. As the shell-forming substance, a substance exhibiting thermal melting properties or a substance which can be broken by the thermal expansion of the enclosed substance can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyfluorene. Examples of the above-mentioned non-reduced adhesives include adhesives in a form in which the radiation-curable adhesives described above with respect to the adhesive-reduced adhesives are hardened by irradiation with radiation in advance, or pressure-sensitive adhesives. Agent. As the adhesive for forming the adhesive layer 12, one type of non-reduced adhesive may be used, or two or more types of non-reduced adhesive may be used. The entire adhesive layer 12 may be formed of a non-reduced adhesive, or a part of the adhesive layer 12 may be formed of the non-reduced adhesive. For example, when the adhesive layer 12 has a single-layer structure, the entirety of the adhesive layer 12 may be formed of a non-reduced adhesive force, or a specific part of the adhesive layer 12 (for example, a bonding object of a wafer ring) The region and the region outside the center region) are formed of a non-reduced adhesive type, and other portions (for example, the central region as a region to be bonded to a semiconductor wafer) are formed of an adhesive of reduced type. In addition, when the adhesive layer 12 has a laminated structure, all the adhesive layers of the laminated structure may be formed of a non-reduced adhesive, or a part of the laminated structure may be formed of a non-reduced adhesive. Radiation-curable adhesives (radiation-curable adhesives) that have been hardened by radiation in advance (radiation-curable adhesives that have been irradiated with radiation) show that the adhesive strength is weakened by the radiation, but that they are derived from the polymer component contained Adhesiveness, in the step of dicing, etc., can exert the minimum adhesive force required for the adhesive layer of the dicing tape. In the case of using a radiation-curable adhesive that has been irradiated with radiation, the entire adhesive layer 12 may be formed of a radiation-curable adhesive that is irradiated with radiation in the direction in which the surface of the adhesive layer 12 is expanded, or an adhesive layer One part of 12 is formed of a radiation-curable adhesive that has been irradiated with radiation and the other part is formed of a radiation-curable adhesive that has not been irradiated with radiation. As the pressure-sensitive adhesive, a known or commonly used pressure-sensitive adhesive can be used, and an acrylic adhesive or a rubber-based adhesive based on an acrylic polymer can be preferably used. When the adhesive layer 12 contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is preferably a polymer containing a structural unit derived from a (meth) acrylate as a structural unit having the largest mass ratio. . As the acrylic polymer, for example, the acrylic polymer described above as the acrylic polymer contained in the additive radiation-curable adhesive can be used. In addition to the above-mentioned components, the adhesive layer 12 or the adhesive forming the adhesive layer 12 may be blended with well-known or conventional adhesives such as a cross-linking accelerator, an adhesion imparting agent, an anti-aging agent, and a colorant (pigment, dye, etc.). Additives used in the layer. Examples of the colorant include compounds that are colored by irradiation with radiation. In the case where a compound that is colored by irradiation with radiation is contained, only the portion irradiated with radiation may be colored. The above-mentioned compound colored by radiation irradiation is colorless or light-colored before radiation irradiation, and becomes a colored compound by radiation irradiation, and examples thereof include leuco dyes. The amount of the compound to be colored by radiation irradiation is not particularly limited, and can be appropriately selected. The thickness of the adhesive layer 12 is not particularly limited. In the case where the adhesive layer 12 contains a radiation-hardening adhesive, the viewpoint of the balance of the adhesion of the adhesive layer 12 to the adhesive film 20 before and after radiation hardening is obtained. In particular, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm. (Sticky Film) The viscous film 20 has a structure capable of functioning as a thermosetting adhesive for displaying viscous crystals. The die-bond film 20 can be cut by applying tensile stress, and can be used after being broken by tensile stress. As described above, the storage elastic modulus E 'at 25 ° C measured at a frequency of 10 Hz as described above is 3 ~ 5 GPa, preferably 3. 2 ~ 4. 8 GPa. When the storage elastic modulus E ′ is 3 GPa or more, when stress is applied to a relatively slow area at normal temperature, the viscous crystal film is difficult to move in the vertical direction (thickness direction). In the case of a semiconductor wafer, it is needless to say that even in the case of using a semiconductor wafer having a multilayered circuit layer, it can be made sticky during expansion at room temperature and after expansion (for example, the period from the cleaning step to the pick-up). It is difficult for the crystal film to generate the bulge of the self-cutting crystal band. In addition, when the singularized viscous film is intentionally picked up from the tangential band and peeled off, stress is applied to a relatively fast area, so that it can be easily picked up. Furthermore, by setting the storage elastic modulus E ′ to 5 GPa or less, the sticky crystal film has excellent wettability to the adherend during sticking, so the sticky crystal compatibility is excellent, and the semiconductor wafer is bonded (temporarily fixed) to the substrate Adhesion works well. The storage elastic modulus E 'of the adhesive film 20 measured at a frequency of 10 Hz at -15 ° C is preferably 4 to 7 GPa, and more preferably 4. 5 ~ 6. 5 GPa. If the storage elastic modulus E 'is within the above range, it is difficult to move the viscous film in the vertical direction (thickness direction) when stress is applied at a low temperature, and it is needless to say that when a semiconductor wafer that is not multilayered is used Even in the case of using a semiconductor wafer with a multilayered circuit layer, it is difficult to cause the sticky film to produce a ridge of a self-cutting crystal band during cold expansion and after expansion (for example, until the temperature returns to normal temperature). In addition, it is possible to easily cut the viscous crystal film by cold expansion. The storage elastic modulus G 'of the viscous crystal film 20 measured at a frequency of 1 Hz at 130 ° C is preferably 0. 03 ~ 0. 7 MPa, more preferably 0. 1 ~ 0. 6 MPa. Thereby, it is easy to control the storage elastic modulus E 'at 25 ° C to be within the above range, so there is a tendency that it is difficult to produce a bulge during expansion at normal temperature and after expansion, and then during cold expansion, and it is difficult for the adherend to The sticky crystal compatibility is further improved. The loss elastic modulus G '' of the viscous film 20 measured at a frequency of 1 Hz at 130 ° C is preferably 0. 01 ~ 0. 1 MPa, more preferably 0. 02 ~ 0. 08 MPa. Thereby, it is possible to further make it difficult for the bump of the wafer to be generated during the die bonding. The storage elastic modulus E ′ of the viscous crystal film 20 measured at 150 ° C. under the condition of a frequency of 10 Hz after thermal curing is preferably 20 to 200 MPa, and more preferably 22 to 150 MPa. When the semiconductor wafer is attached to the adherend in the state of the semiconductor wafer with a sticky crystal film, when the following wire bonding step is performed, the wire bonding step is generated due to heating during wire bonding. Heat, sometimes the viscous crystal film will heat up to about 150 ° C. By allowing the viscous film 20 to exhibit a storage elastic modulus E 'in the above range at 150 ° C after thermal curing, the viscous film after thermal curing has a suitable The hardness is difficult to move the semiconductor wafer due to the impact of the wire bonding even when the temperature is raised to about 150 ° C. in the wire bonding step, and it is easy to conduct the force to the wire bonding pad, and the wire bonding can be performed appropriately. The storage elastic modulus E ′ of the viscous crystal film 20 measured at 250 ° C. under the condition of a frequency of 10 Hz after thermal curing is preferably 20 to 200 MPa, and more preferably 22 to 150 MPa. As a reliability evaluation of semiconductor-related parts, a humidity-resistance reflow test for heating the semiconductor-related parts to about 250 ° C. is usually performed. By thermally curing the viscous film 20 at 250 ° C., the storage elastic modulus is displayed in the above range. E ', even when heated to about 250 ° C in the moisture resistance reflow test, it is possible to make it difficult for the adhesive film to peel off from the adherend. In addition, the post-hardening of the viscous crystal film means that the viscous film is thermally cured at 175 ° C. for 1 hour. After the thermal curing, the viscous film may be incompletely cured, or may be cured to a state where hardening (complete curing) hardly proceeds (for example, incomplete curing and then curing (post-curing described below) Steps, etc.) and harden it). In this embodiment, the viscous film 20 and the adhesive constituting the viscous film 20 may contain a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, or may include a thermosetting resin capable of reacting with a curing agent to form a bond. Functional thermoplastic resin. When the adhesive constituting the adhesive film 20 contains a thermoplastic resin having a thermosetting functional group, the adhesive does not need to contain a thermosetting resin (such as an epoxy resin). The die-bonding film 20 may have a single-layer structure or a multi-layer structure. When the die-bond film 20 contains a thermosetting resin as well as a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amine-based resin, unsaturated polyester resin, and polymer. Urethane resin, silicone resin, thermosetting polyfluorene resin, and the like. The thermosetting resin may be used alone or in combination of two or more. As the thermosetting resin, an epoxy resin is preferable because the content of ionic impurities and the like that may cause corrosion of a semiconductor wafer of a sticky crystal object tends to be small. Moreover, as a hardener of an epoxy resin, a phenol resin is preferable. Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type,茀 type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, isocyanuric acid triglycidyl type, glycidylamine type ring Oxygen resin and so on. Among them, novolac-type epoxy resin, biphenyl-type epoxy resin, and trihydroxyphenylmethane-type epoxy resin are preferred in terms of high reactivity with a phenol resin as a hardener and excellent heat resistance. Tetraphenol-based ethane epoxy resin. Examples of the phenol resin that can function as a curing agent for epoxy resins include novolac-type phenol resins, soluble phenol-type phenol resins, and polyhydroxystyrenes such as polyparahydroxystyrene. Examples of the novolac-type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolac resin, a third butyl novolac resin, and a nonylphenol novolac resin. These phenol resins may be used alone or in combination of two or more. Among them, when used as a hardener for epoxy resins as an adhesive for viscous crystals, from the viewpoint of improving the connection reliability of the adhesive, phenol novolac resin and phenol arane are preferred. Based resin. In the viscous crystal film 20, from the viewpoint that the curing reaction between the epoxy resin and the phenol resin is sufficiently advanced, it is preferable that the hydroxyl group in the phenol resin is equivalent to 1 equivalent of the epoxy group in the epoxy resin component. 0. 5 ~ 2. 0 equivalent, more preferably 0. 7 ~ 1. A 5 equivalent amount contains a phenol resin. In the case where the viscous film 20 contains a thermosetting resin, the content ratio of the above thermosetting resin is from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the viscous film 20 with respect to the viscous film. The total mass of the film 20 is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polymer Butadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon or 6,6-nylon polyamine resin, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, Polyamidamine, imine resin, fluororesin, etc. These thermoplastic resins may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferred because the ionic impurities are small and the heat resistance is high, so it is easy to ensure the bonding reliability of the die-bond film 20. The acrylic resin is preferably a polymer containing a structural unit derived from a (meth) acrylate as a structural unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid esters exemplified as the (meth) acrylic acid ester of an acrylic polymer which may be contained in the above-mentioned additive-type radiation-curable adhesive. The acrylic resin may contain a structural unit derived from another monomer component copolymerizable with the (meth) acrylate. Examples of the other monomer component include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, and the like. Functional group-containing monomers such as acrylamide and acrylonitrile, or various polyfunctional monomers, etc., specifically, acrylic polymerization that can be contained in the radiation-curable adhesive for forming the above-mentioned adhesive layer 12 can be used. And other monomer components are exemplified. From the viewpoint of achieving a high cohesive force in the die-bond film 20, the acrylic resin is preferably a (meth) acrylate (especially, an alkyl (meth) acrylate having an alkyl group having a carbon number of 4 or less) ) And carboxyl-containing monomers and nitrogen atom-containing monomers and polyfunctional monomers (especially polyglycidyl-based polyfunctional monomers), more preferably ethyl acrylate and butyl acrylate and acrylic acid and propylene Copolymer of nitrile and polyglycidyl (meth) acrylate. For the acrylic resin, the glass transition temperature (Tg) is preferably from 5 to 35 ° C., from the viewpoint that the respective storage elastic modulus and loss elastic modulus are easily within a desired range. 10 ~ 30 ℃. In the case where the viscous film 20 contains a thermosetting resin as well as a thermoplastic resin, as the content ratio of the above-mentioned thermoplastic resin, by adjusting the content ratio with the thermosetting resin, it is easy to make the respective storage elastic molds described above. From the viewpoint that the number and the loss elastic modulus are within a desired range, the organic component (such as a thermosetting resin, a thermoplastic resin, a curing catalyst, etc.), a silane coupling agent, and a dye are removed from the filler in the viscous film 20 The total mass is preferably 30 to 70% by mass, more preferably 40 to 60% by mass, and even more preferably 45 to 55% by mass. When the die-bond film 20 contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. Among the thermosetting functional group-containing acrylic resins, the acrylic resin preferably contains a structural unit derived from a (meth) acrylate as a structural unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid esters exemplified as the (meth) acrylic acid ester of an acrylic polymer which may be contained in the above-mentioned additive-type radiation-curable adhesive. On the other hand, examples of the thermosetting functional group in the acrylic resin containing a thermosetting functional group include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among these, glycidyl and carboxyl groups are preferred. That is, the acrylic resin containing a thermosetting functional group is particularly preferably a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin. Furthermore, it is preferable that the acrylic resin containing a thermosetting functional group also contains a curing agent. Examples of the curing agent include those which can be contained in the radiation-curable adhesive for forming the adhesive layer 12. Examples of cross-linking agents. When the thermosetting functional group in the acrylic resin containing a thermosetting functional group is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and for example, the above-mentioned various phenol resins can be used. The die-casting film 20 preferably contains a filler. Since the filler is prepared in the viscous crystal film 20, the above-mentioned storage elastic modulus and loss elastic modulus of the viscous film 20 can be easily adjusted. Further, physical properties such as electrical conductivity, thermal conductivity, and elastic modulus can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and nitride. Boron, crystalline silicon dioxide, amorphous silicon dioxide, and other metal simple substances or alloys such as aluminum, gold, silver, copper, and nickel, amorphous carbon black, graphite, and the like can also be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a sheet shape. As the filler, only one kind may be used, or two or more kinds may be used. The average particle diameter of the filler is preferably 0. 005 ~ 10 μm, more preferably 0. 005 ~ 1 μm. If the above average particle size is 0. Above 005 μm, the wettability and adhesion of the semiconductor wafer and the like to the adherend are further improved. When the average particle diameter is 10 μm or less, the effect of the filler added to impart the above-mentioned characteristics can be made sufficient, and heat resistance can be secured. The average particle diameter of the filler can be obtained using, for example, a photometric particle size distribution meter (for example, "LA-910", manufactured by Horiba, Ltd.). In the case where the viscous crystal film 20 contains a filler, as the content ratio of the filler, from the viewpoint that it is easy to make the above-mentioned respective storage elastic modulus and loss elastic modulus fall within a desired range, compared with the viscous film 20 The total mass is preferably 30 to 70% by mass, more preferably 40 to 60% by mass, and even more preferably 42 to 55% by mass. The adhesive film 20 may contain other components as needed. Examples of the other components include a curing catalyst, a flame retardant, a silane coupling agent, an ion trapping agent, and a dye. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropyl Methyldiethoxysilane and the like. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, and benzotriazole. These other additives may be used alone or in combination of two or more. In particular, as the viscous crystal film 20, it is preferable to contain a thermoplastic resin (especially an acrylic resin) and a thermosetting resin from the viewpoint that the respective storage elastic modulus and loss elastic modulus are easily within a desired range. And filler, and the content ratio of the thermoplastic resin (especially an acrylic resin) with respect to the total mass of the organic components of the filler in the viscous crystal film 20 is 30 to 70% by mass (preferably 40 to 60% by mass, more preferably It is 45 to 55 mass%), and the content ratio of the filler relative to the total mass of the adhesive film 20 is 30 to 70 mass% (preferably 40 to 60 mass%, more preferably 42 to 55 mass%). The thickness (total thickness in the case of a laminated body) of the viscous crystal film 20 is not particularly limited, and is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, and more preferably 80 μm. The lower limit is preferably 3 μm, and more preferably 5 μm. The glass transition temperature (Tg) of the sticky film 20 is preferably 0 ° C or higher, and more preferably 10 ° C or higher. When the glass transition temperature is 0 ° C or higher, the die-bond film 20 can be easily cut by cold expansion. The upper limit of the glass transition temperature of the die-bond film 20 is, for example, 100 ° C. The die-bonding film 20 may include a single-layer die-bonding film as shown in FIG. 1. In addition, in the present specification, the so-called single layer refers to a layer including the same composition, including a form in which a plurality of layers are laminated including the same composition. The die-bonding film of the die-cutting die-bonding film of the present invention is not limited to this example. For example, the die-bonding film may have a multi-layer structure in the form of two or more laminated films with different compositions. The cut crystal sticky film 1 which is one embodiment of the cut crystal sticky film of the present invention is manufactured, for example, as follows. First, the substrate 11 can be formed by a known or conventional film-forming method. Examples of the film forming method include a calendering film method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and a dry lamination method. Wait. Next, after the adhesive layer-forming composition (adhesive composition) containing the adhesive and the solvent forming the adhesive layer 12 is coated on the substrate 11 to form a coating film, the solvent is removed or hardened as necessary. This coating film is cured to form the adhesive layer 12. Examples of the coating method include known or conventional coating methods such as roll coating, screen coating, and gravure coating. Also, as the desolvent conditions, for example, the temperature can be 80 to 150 ° C. and the time 0. Perform within 5 to 5 minutes. Alternatively, after the adhesive composition is applied to the separator to form a coating film, the coating film may be cured under the above-mentioned solvent removal conditions to form the adhesive layer 12. Thereafter, the adhesive layer 12 and the separator are attached to the substrate 11 together. As described above, the dicing tape 10 can be produced. Regarding the die-casting film 20, a composition (adhesive composition) for forming the die-casting film 20 containing a resin, a filler, a curing catalyst, a solvent, and the like is first produced. Next, after the adhesive composition is applied on a separator to form a coating film, the coating film is cured by desolvating or curing, if necessary, to form a sticky film 20. The coating method is not particularly limited, and examples thereof include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal conditions can be performed, for example, at a temperature of 70 to 160 ° C. and a time of 1 to 5 minutes. Then, the separators are peeled from the dicing tape 10 and the adhesive film 20, respectively, and the adhesive film 20 and the adhesive layer 12 are bonded to each other in such a manner that they are bonded together. Bonding can be performed, for example, by pressure bonding. At this time, the lamination temperature is not particularly limited, but is preferably 30 to 50 ° C, more preferably 35 to 45 ° C. Also, the line pressure is not particularly limited, and for example, it is preferably 0. 1 ~ 20 kgf / cm, more preferably 1 ~ 10 kgf / cm. As described above, when the adhesive layer 12 is an adhesive layer (radiation-curable adhesive layer) formed of a radiation-curable adhesive, the adhesive layer 12 is irradiated with ultraviolet rays or the like after the bonding of the adhesive film 20. During radiation, for example, the adhesive layer 12 is irradiated with radiation from the substrate 11 side, and the irradiation amount is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ. The irradiation area (irradiation area R) in the cut crystal adhesive film 1 as the measure for weakening the adhesive force of the adhesive layer 12 is usually the area other than the peripheral edge of the adhesive film 20 in the adhesive layer 12 region. In the case where the irradiation region R is partially provided, it can be performed through a mask formed with a pattern corresponding to the region from which the irradiation region R is removed. Further, a method of irradiating the radiation with dots to form the irradiation region R may be mentioned. In the above manner, for example, a cut crystal adhesive film 1 shown in FIG. 1 can be manufactured. A separator (not shown) may be provided on the cut-crystal die-bonding film 1 on the side of the die-bond film 20 so as to cover at least the die-bond film 20. When the adhesive film 20 is smaller in size than the adhesive layer 12 of the dicing tape 10 and there is an area in the adhesive layer 12 where the adhesive film 20 is not attached, for example, the separator may be at least covered with the adhesive film 20 And the configuration of the adhesive layer 12. The separator is an element for protecting the adhesive film 20 (for example, the adhesive film 20 and the adhesive layer 12) from being exposed at least, and is peeled from the film when the cut crystal adhesive film 1 is used. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, and a polypropylene film, and the surface is subjected to a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester-based release agent. Coated plastic film or paper. [Manufacturing Method of Semiconductor Device] A semiconductor device can be manufactured by using the cut-to-seal die-bonding film of the present invention. Specifically, a semiconductor device can be manufactured by a manufacturing method including the steps of: attaching a divided body of a semiconductor wafer including a plurality of semiconductor wafers to the above-mentioned die-bonding film side of the die-bonding die film of the present invention, or The step of singulating a semiconductor wafer into a plurality of semiconductor wafers (sometimes referred to as "step A"); under relatively low temperature conditions, expanding the dicing tape of the dicing die-bonding film of the present invention, at least as described above The step of cutting the sticky crystal film to obtain a semiconductor wafer with a sticky crystal film (sometimes referred to as "step B"); under relatively high temperature conditions, expanding the above-mentioned cut band to widen the semiconductor wafer with a sticky crystal film Steps (sometimes referred to as "step C") spaced apart from each other; and steps (sometimes referred to as "step D") for picking up the above-mentioned semiconductor wafer with an attached crystal film. The above-mentioned divided body of a semiconductor wafer including a plurality of semiconductor wafers used in step A, or a semiconductor wafer that can be singulated into a plurality of semiconductor wafers can be obtained in the following manner. First, as shown in FIGS. 2 (a) and 2 (b), a dividing groove 30 a is formed on the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been placed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. Then, the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, and a crystal cutting device is used while the semiconductor wafer W is held by the wafer processing tape T1. Such a rotary cutter forms a dividing groove 30a of a specific depth on the first surface Wa side of the semiconductor wafer W. The dividing groove 30a is a space for separating the semiconductor wafer W into a semiconductor wafer unit (the dividing groove 30a is schematically represented by a thick solid line in FIGS. 2 to 4). Next, as shown in FIG. 2 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is from the semiconductor wafer W. Of stripping. Next, as shown in FIG. 2 (d), while the semiconductor wafer W is held by the wafer processing tape T2, it is thinned by a grinding process from the second surface Wb until the semiconductor wafer W reaches a specific thickness. (Wafer thinning step). The grinding processing can be performed using a grinding processing apparatus equipped with a grinding stone. Through this wafer thinning step, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed in this embodiment. As the semiconductor wafer 30A, specifically, the wafer has a portion (connection portion) that connects a portion that is singulated into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the end on the side of the second surface Wb of the dividing groove 30a can be appropriately selected according to the manufactured semiconductor device. (Step A) In step A, a divided body of a semiconductor wafer containing a plurality of semiconductor wafers or a semiconductor wafer that can be singulated into a plurality of semiconductor wafers is affixed to the die-bonding film 20 side of the dicing die-bonding film 1. circle. In one embodiment of step A, as shown in FIG. 3 (a), a semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the die-bond film 20 of the die-bond die-bond film 1. Thereafter, as shown in FIG. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the adhesive layer 12 of the cut crystal adhesive film 1 is a radiation-hardening adhesive layer, after the semiconductor wafer 30A is bonded to the adhesive film 20, the adhesive layer 12 can be irradiated with ultraviolet rays from the substrate 11 side. Iso-radiation is used instead of the above-mentioned radiation during the manufacturing process of the cut-to-stick cement film 1. The irradiation dose is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ. The irradiated area (irradiated area R shown in FIG. 1), which is the measure for reducing the adhesive force of the adhesive layer 12, in the cut crystal adhesive film 1 is, for example, the removal of the adhesive area of the adhesive film 20 in the adhesive region 12 Areas other than the periphery. (Step B) In step B, under the condition of relatively low temperature, the die-cut band 10 of the die-cut die-bond film 1 is expanded, and at least the die-bond film 20 is cut to obtain a semiconductor wafer with a die-bond film. In one embodiment of step B, first, after attaching a ring frame 41 to the adhesive layer 12 of the dicing tape 10 of the dicing die-bonding film 1, as shown in FIG. 4 (a), The cut crystal sticky film 1 of circle 30A is fixed to the holder 42 of the expansion device. Next, as shown in FIG. 4 (b), the first expansion step (cold expansion step) under relatively low temperature conditions is performed, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the cut crystals are bonded. The sticky crystal film 20 of the film 1 is cut into small pieces of the sticky crystal film 21 to obtain a semiconductor wafer 31 with the sticky crystal film. In the cold expansion step, the hollow cylinder-shaped jacking member 43 provided in the expansion device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bond film 1 and raised, so that a semiconductor crystal is bonded. The dicing tape 10 of the dicing die-bonding film 1 of the circle 30A expands in a two-dimensional direction including the semiconductor wafer 30A in the radial direction and the circumferential direction. This expansion is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa, is generated in the crystalline band 10. The temperature condition of the cold expansion step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed of the cold expansion step (the speed at which the jacking member 43 rises) is preferably 0. 1 ~ 100 mm / s. The expansion amount in the cold expansion step is preferably 3 to 16 mm. In step B, when a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers is used, the semiconductor wafer 30A is cut at a thin-walled and easily fractured portion and singulated into the semiconductor wafer 31. Further, in step B, the tensile stress generated by the dicing tape 10 is suppressed in the adhesive film 20 in close contact with the adhesive layer 12 of the dicing tape 10 that has been expanded, and is exerted in the regions where the semiconductor wafers 31 are in close contact. On the other hand, the deformation suppressing effect is not generated in the portion in the vertical direction in the drawing of the division grooves between the semiconductor wafers 31. As a result, in the die-bond film 20, a portion in the vertical direction of the division grooves located between the semiconductor wafers 31 is cut. After the cutting by expansion, as shown in FIG. 4 (c), the jacking member 43 is lowered, and the expanded state of the dicing tape 10 is released. (Step C) In step C, under the condition of relatively high temperature, the above-mentioned dicing tape 10 is expanded to widen the interval between the semiconductor wafers with the attached crystal film. In one embodiment of step C, first, as shown in FIG. 5 (a), the second expansion step (normal temperature expansion step) under relatively high temperature conditions is performed, and the distance between the semiconductor wafers 31 with the adhesive film is increased. (Interval) widened. In step C, the hollow cylindrical shaped jacking member 43 provided in the expansion device is raised again to expand the cut band 10 of the cut crystal sticky film 1. The temperature condition in the second expansion step is, for example, 10 ° C or higher, and preferably 15 to 30 ° C. The expansion speed (the speed at which the jacking member 43 rises) in the second expansion step is, for example, 0. 1 ~ 10 mm / second, preferably 0. 3 ~ 1 mm / s. The expansion amount in the second expansion step is, for example, 3 to 16 mm. In step C, the separation distance of the semiconductor wafer 31 with a sticky crystal film is widened to the extent that the semiconductor wafer 31 with a sticky crystal film can be appropriately picked from the dicing tape 10 by the following picking step. After the interval is widened by expansion, as shown in FIG. 5 (b), the jacking member 43 is lowered, and the expanded state of the dicing tape 10 is released. From the viewpoint of suppressing the separation distance of the semiconductor wafer 31 with a die attach film on the dicing tape 10 from shrinking after the expansion state is released, it is preferable to hold the semiconductor wafer 31 holding area of the dicing tape 10 before the expansion state is released. The outer part is heated to shrink it. After step C, there may be a cleaning step of cleaning the semiconductor wafer 31 side of the dicing tape 10 of the semiconductor wafer 31 with a sticky crystal film using a cleaning solution such as water, if necessary. (Step D) In step D (pickup step), a singulated semiconductor wafer with a sticky crystal film is picked up. In one embodiment of step D, after going through the above-mentioned cleaning step as required, as shown in FIG. 6, the semiconductor wafer 31 with the adhesive crystal film is picked from the dicing tape 10. For example, on the lower side of the dicing tape 10 in the figure, the pin member 44 of the pickup mechanism is raised, and the semiconductor wafer 31 with a sticky crystal film is picked up via the dicing tape 10, and then the adsorption jig 45 is used. And adsorption remains. In the picking-up step, the jacking speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the jacking amount of the pin member 44 is, for example, 100 to 500 μm. The method for manufacturing the semiconductor device may include steps other than steps A to D. For example, in one embodiment, as shown in FIG. 7 (a), the picked-up semiconductor wafer 31 with an adhesive film is temporarily fixed to the adherend 51 via the adhesive film 21 (temporary fixing step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor wafer. When the adhesive film 21 is temporarily fixed, the shear adhesive force to the adherend 51 at 25 ° C is preferably 0. Above 2 MPa, more preferably 0. 2 ~ 10 MPa. The above-mentioned shear adhesion force of the viscous film 21 is 0. The structure of 2 MPa or more can suppress the shear deformation of the bonding surface of the die-bond film 21 and the semiconductor wafer 31 or the adherend 51 due to ultrasonic vibration or heating in the following wire bonding step. The wire bonding is suitably performed. Also, the sticky crystal film 21 is temporarily fixed at 175 ℃ at a phase of the adherence of the adherend 51 is preferably 0. Above 01 MPa, more preferably 0. 01 ~ 5 MPa. Next, as shown in FIG. 7 (b), an electrode pad (not shown) of the semiconductor wafer 31 and a terminal portion (not shown) of the adherend 51 are electrically connected via a bonding wire 52 (wire bonding step) ). The connection between the electrode pad of the semiconductor wafer 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be achieved by ultrasonic welding accompanied by heating, and can be performed without thermally hardening the die attach film 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The heating temperature of the wire during wire bonding is, for example, 80 to 250 ° C, and preferably 80 to 220 ° C. The heating time is several seconds to several minutes. Next, as shown in FIG. 7 (c), the semiconductor wafer 31 is sealed with a sealing resin 53 for protecting the semiconductor wafer 31 or the bonding wire 52 on the adherend 51 (sealing step). In the sealing step, the die-bond film 21 is thermally hardened. In the sealing step, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, a heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and a heating time is, for example, 60 seconds to several minutes. In a case where the sealing resin 53 is not sufficiently hardened in the sealing step, a post-curing step is performed after the sealing step to completely harden the sealing resin 53. Even when the die-bond film 21 is not completely thermally hardened in the sealing step, the die-bond film 21 and the sealing resin 53 can be completely heat-hardened together in the post-hardening step. In the post-hardening step, the heating temperature is, for example, 165 to 185 ° C, and the heating time is, for example, 0. 5 ~ 8 hours. In the above-mentioned embodiment, as described above, after the semiconductor wafer 31 with an adhesive film is temporarily fixed to the adherend 51, a wire bonding step is performed without completely curing the adhesive film 21 thermally. In the above-mentioned method for manufacturing a semiconductor device, instead of such a configuration, the semiconductor wafer 31 with an adhesive film is temporarily fixed to the adherend 51, and the adhesive film 21 is thermally hardened before the wire bonding step. In the method for manufacturing a semiconductor device, as another embodiment, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described with reference to FIG. 2 (d). After going through the above process with reference to FIG. 2 (c), in the wafer thinning step shown in FIG. 8, the semiconductor wafer W is held by the wafer processing tape T2, and the wafer The two surfaces Wb are ground and thinned to a specific thickness, and a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed. In the wafer thinning step described above, a method of grinding the wafer until the dividing groove 30a is exposed on the second surface Wb side (the first method) may be adopted, or the following method may be adopted: the wafer is faced from the second surface Wb The grinding is performed until the division groove 30a is reached, and thereafter, a crack is generated between the division groove 30a and the second surface Wb by the pressing force of the self-rotating grinding stone on the wafer to form a semiconductor wafer division 30B ( Method 2). Depending on the method used, it is appropriate to determine the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 2 (a) and 2 (b). In FIG. 8, the divided grooves 30 a treated by the first method or the divided grooves 30 a treated by the second method are shown in thick solid line mode and the cracks connected to them. In the method for manufacturing a semiconductor device, in step A, the semiconductor wafer segment 30B thus produced is used instead of the semiconductor wafer 30A as the semiconductor wafer segment, and the above steps are performed with reference to FIGS. 3 to 7. FIGS. 9 (a) and 9 (b) show step B in this embodiment, that is, a first expansion step (cold expansion step) performed after the semiconductor wafer segment 30B is bonded to the dicing die-bond film 1. In step B of this embodiment, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 10 on the lower side of the dicing die-bonding film 1 and rises, so that a semiconductor is bonded. The dicing tape 10 of the dicing die-bonding film 1 of the wafer slicing body 30B is expanded in a two-dimensional direction including the semiconductor wafer slicing body 30B in a radial direction and a circumferential direction. The expanded tensile stress can be appropriately set. The temperature condition of the cold expansion step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (the speed at which the jacking member 43 rises) in the cold expansion step is preferably 1 to 400 mm / second. The expansion amount in the cold expansion step is preferably 1 to 300 mm. Through this cold expansion step, the die-bond film 20 of the cut-die-bond film 1 is cut into small pieces of the die-bond film 21 to obtain a semiconductor wafer 31 with the die-bond film. Specifically, in the cold expansion step, the tensile stress generated in the dicing tape 10 is exerted in the die-bonding film 20 in close contact with the adhesive layer 12 of the dicing tape 10 under expansion, and is exerted on the semiconductor wafer segment 30B. The deformation suppressing effect is provided in the regions in which the semiconductor wafers 31 are in close contact with each other. On the other hand, such a deformation suppressing effect does not occur in the portion in the vertical direction in the drawing of the division grooves 30a between the semiconductor wafers 31. As a result, a portion in the vertical direction of the division groove 30 a between the semiconductor wafers 31 in the die attach film 20 is cut. In the above-mentioned method for manufacturing a semiconductor device, as another embodiment, a semiconductor wafer 30C prepared as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in step A. In this embodiment, as shown in FIGS. 10 (a) and 10 (b), first, a modified region 30 b is formed in the semiconductor wafer W. The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been placed on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. Then, the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer wafer is processed from the wafer while the semiconductor wafer W is held by the wafer processing tape T3. The semiconductor wafer W is irradiated with laser light collected by the light-condensing points on the inside of the semiconductor wafer W along the predetermined division line along the opposite side of the band T3, and a modified region is formed in the semiconductor wafer W by the ablation using multiphoton absorption. 30b. The modified region 30 b is a fragile region for separating the semiconductor wafer W into semiconductor wafer units. A method for forming a modified region 30b on a predetermined division line by irradiating laser light to a semiconductor wafer is described in detail in, for example, Japanese Patent Laid-Open No. 2002-192370, but conditions for laser light irradiation in this embodiment are, for example, It is appropriate to adjust within the range of the following conditions. ＜ Laser light irradiation conditions ＞ (A) Laser light Laser light source Semiconductor laser excited Nd: YAG (Neodymium-doped Yttrium Aluminum Garnet) laser wavelength 1064 nm Cross-sectional area of laser light spot 3. 14 × 10^-8 cm² Oscillation type Q switching pulse repetition frequency below 100 kHz Pulse width below 1 μs Output laser quality below 1 mJ TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA (numerical aperture) 0.55 Laser light The transmittance of the wavelength is 100% or less (C) The moving speed of the mounting table on which the semiconductor substrate is placed is 280 mm / s or less. As shown in FIG. 10 (c), the semiconductor wafer W is held by the wafer processing tape T3. In this state, a semiconductor wafer 30C (wafer) that can be singulated into a plurality of semiconductor wafers 31 is formed by thinning the semiconductor wafer W from the second surface Wb until it reaches a specific thickness. Thinning step)In the method for manufacturing a semiconductor device described above, in step A, the semiconductor wafer 30C thus produced is used instead of the semiconductor wafer 30A as a singulated semiconductor wafer, and the above steps are performed with reference to FIGS. 3 to 7. FIG. 11 (a) and FIG. 11 (b) show step B in this embodiment, that is, the first expansion step (cold expansion step) performed after bonding the semiconductor wafer 30C to the dicing die-bond film 1. In the cold expansion step, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 10 on the lower side of the dicing die-bonding film 1 and rises, so that the semiconductor wafer 30C is bonded. The dicing tape 10 of the dicing die-bonding film 1 is expanded in a two-dimensional direction including a semiconductor wafer 30C in a radial direction and a circumferential direction. The expanded tensile stress can be appropriately set. The temperature condition of the cold expansion step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (the speed at which the jacking member 43 rises) in the cold expansion step is preferably 1 to 400 mm / second. The expansion amount in the cold expansion step is preferably 1 to 300 mm. Through such a cold expansion step, the die-bond film 20 of the cut die-bond film 1 is cut into small pieces of the die-bond film 21 to obtain a semiconductor wafer 31 with the die-bond film. Specifically, in the cold expansion step, a crack is formed in the fragile modified region 30 b in the semiconductor wafer 30C to be singulated into the semiconductor wafer 31. Furthermore, in the cold expansion step, the tensile stress generated in the dicing tape 10 is exerted in each of the die-bonding films 20 in close contact with the adhesive layer 12 of the expanding dicing tape 10, and is exerted on each semiconductor wafer 31 of the semiconductor wafer 30C. The deformation suppressing effect is exerted in each of the closely-contacted regions. On the other hand, such a deformation suppressing effect does not occur in the portion located in the vertical direction in the drawing of the crack formation portion of the wafer. As a result, the die-bond film 20 is cut in the vertical direction in the figure of the crack formation site between the semiconductor wafers 31. Moreover, in the above-mentioned method for manufacturing a semiconductor device, the cut crystal die-bond film 1 can be used for obtaining a semiconductor wafer with a sticky crystal film as described above, and can also be used to obtain a laminated semiconductor wafer for three-dimensional mounting. In the case of a semiconductor wafer with a sticky crystal film, it is used. In such a three-dimensionally mounted semiconductor wafer 31, a die-bond film 21 and a spacer may be interposed, or a spacer may not be interposed. [Examples] The following examples illustrate the present invention in more detail, but the present invention is not limited in any way by these examples. Example 1 (Production of cut crystal ribbon) A reaction vessel provided with a cooling pipe, a nitrogen introduction pipe, a thermometer, and a stirring device was charged with 100 parts by mass of 2-ethylhexyl acrylate (2EHA) and 2-hydroxyethyl acrylate (HEA) 19 parts by mass, 0.4 parts by mass of benzamidine peroxide, and 80 parts by mass of toluene were polymerized in a nitrogen gas stream at 60 ° C. for 10 hours to obtain a solution containing an acrylic polymer A. 1.2 parts by mass of 2-methacryloxyethyl isocyanate (MOI) was added to the acrylic polymer A-containing solution, and an addition reaction was performed at 50 ° C for 60 hours in an air stream to obtain acrylic acid-containing solution. Solution of polymer A '. Next, based on 100 parts by mass of the acrylic polymer A ', 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and a photopolymerization initiator (trade name "Irgacure 184", BASF) were added. 3 parts by mass) to produce an adhesive composition A. The obtained adhesive composition A was coated on a surface of a PET-based separator subjected to a silicone treatment, and heated at 120 ° C. for 2 minutes to desolvate the solvent to form an adhesive layer A having a thickness of 10 μm. Then, an EVA film (manufactured by Gunze Co., Ltd. with a thickness of 115 μm) was bonded to the exposed surface of the adhesive layer A as a base material, and it was held at 23 ° C. for 72 hours to produce a cut crystal tape A. (Production of a sticky crystal film) 100 parts by mass of an acrylic resin (trade name "SG-P3", made by Nagase chemteX (stock), glass transition temperature 12 ° C), epoxy resin (trade name "JER1001", Mitsubishi Chemical ( Manufacture) 45 parts by mass, phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Chemical Co., Ltd.) 50 parts by mass, spherical silica (trade name "SO-25R", manufactured by Admatechs (share)) 190 parts by mass and hardening catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain an adhesive composition having a solid content concentration of 20% by mass.物 A。 A. Next, it was coated on the surface of the PET-based separator (thickness 50 μm) on which the polysiloxane treatment was performed, and heated at 130 ° C. for 2 minutes to desolvate the solvent to produce a 10 μm thick sticky film A. The content ratio of the acrylic resin to the total mass of the organic component (the total mass of the component excluding the spherical silica) in the viscous film A and the content ratio of the silicon dioxide to the total mass of the viscous film A Shown in Table 1. (Fabrication of cut crystal film) The PET-based separator was peeled from the cut crystal tape A, and the adhesive film A was stuck on the exposed adhesive layer. During bonding, the center of the dicing tape and the center of the viscous film are aligned. In addition, a hand pressure roller was used for bonding. As described above, a cut crystal sticky film having a laminated structure including a cut crystal band and a sticky film is manufactured. Example 2 (Production of a sticky crystal film) 100 parts by mass of an acrylic resin (trade name "SG-P3", manufactured by Nagase chemteX (stock), glass transition temperature: 12 ° C), epoxy resin (trade name "JER1001", 45 parts by mass of Mitsubishi Chemical Corporation, 50 parts by mass of phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Chemical Co., Ltd.), spherical silica (trade name "SO-25R", Admatechs (shares )) 200 parts by mass and a curing catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain a solid component concentration of 20% by mass. Adhesive composition B. Next, it was coated on the surface of the PET-based separator (50 μm in thickness) on which the polysiloxane treatment was performed, and then heated at 130 ° C. for 2 minutes to desolvate the solvent to produce a 10 μm thick adhesive film B. The content ratio of the acrylic resin to the total mass of the organic component (the total mass of the component excluding spherical silica) in the viscous film B and the content ratio of the silicon dioxide to the total mass of the viscous film B Shown in Table 1. (Production of the cut crystal sticky film) A cut crystal sticky film was produced in the same manner as in Example 1 except that the sticky film B was used instead of the sticky film A. Example 3 (Production of a sticky crystal film) 100 parts by mass of an acrylic resin (trade name "SG-P3", manufactured by Nagase chemteX (stock), glass transition temperature: 12 ° C), epoxy resin (trade name "JER1001", 45 parts by mass of Mitsubishi Chemical Corporation, 50 parts by mass of phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Chemical Co., Ltd.), spherical silica (trade name "SO-25R", Manufacture) 130 parts by mass and hardening catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a solid content concentration of 20% by mass Adhesive composition C. Next, it was coated on the surface of the PET-based separator (50 μm in thickness) on which the polysiloxane treatment was performed, and then heated at 130 ° C. for 2 minutes to desolvate the solvent to produce a 10 μm thick crystal film C. The content ratio of acrylic resin relative to the total mass of organic components (the total mass of components excluding spherical silica) in the viscous film C and the content ratio of silicon dioxide to the total mass of the viscous film C Shown in Table 1. (Production of the cut crystal sticky film) A cut crystal sticky film was produced in the same manner as in Example 1 except that the sticky film C was used instead of the sticky film A. Comparative Example 1 (Production of a sticky crystal film) 100 parts by mass of an acrylic resin (trade name "SG-708-6", manufactured by Nagase ChemteX Corporation, glass transition temperature 4 ° C), and epoxy resin (trade name "JER1001 ", 45 parts by mass of Mitsubishi Chemical Corporation, 50 parts by mass of phenol resin (trade name" MEH-7851ss ", manufactured by Meiwa Chemical Co., Ltd.), spherical silica (trade name" SO-25R ", Admatechs (Manufactured) 100 parts by mass and a hardening catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a solid content concentration of 20 parts by mass % Of the adhesive composition D. Next, it was coated on the surface of the PET separator (50 μm in thickness) on which the polysiloxane treatment was performed, and then heated at 130 ° C. for 2 minutes to desolvate the solvent to produce a 10 μm thick crystal film D. The content ratio of the acrylic resin to the total mass of the organic component (the total mass of the component excluding spherical silica) in the viscous film D and the content ratio of the silicon dioxide to the total mass of the viscous film D Shown in Table 1. (Production of the cut crystal sticky film) A cut crystal sticky film was produced in the same manner as in Example 1 except that the sticky film D was used instead of the sticky film A. Comparative Example 2 (Production of a sticky crystal film) 100 parts by mass of an acrylic resin (trade name "SG-70L", manufactured by Nagase chemteX (stock), glass transition temperature -13 ° C), and epoxy resin (trade name "JER1001" , Manufactured by Mitsubishi Chemical Corporation, 40 parts by mass, phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Chemical Co., Ltd.), 40 parts by mass, spherical silica (brand name "SO-25R", Admatechs ( 200 parts by mass) and hardening catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) 0.6 parts by mass are added to methyl ethyl ketone and mixed to obtain a solid component concentration of 20% by mass The adhesive composition E. Next, it was coated on the surface of the PET-based separator (50 μm in thickness) on which the polysiloxane treatment was performed, and heated at 130 ° C. for 2 minutes to desolvate the solvent to produce a 10 μm thick viscous film E. The content ratio of the acrylic resin to the total mass of the organic component (the total mass of the component excluding spherical silica) in the viscous film E and the content ratio of the silicon dioxide to the total mass of the viscous film E Shown in Table 1. (Production of the cut crystal sticky film) A cut crystal sticky film was produced in the same manner as in Example 1 except that the sticky film E was used instead of the sticky film A. Comparative Example 3 (Production of a sticky crystal film) 100 parts by mass of an acrylic resin (trade name "SG-P3", made by Nagase chemteX (stock), glass transition temperature 12 ° C), epoxy resin (trade name "JER1001", 45 parts by mass of Mitsubishi Chemical Corporation, 50 parts by mass of phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Chemical Co., Ltd.), spherical silica (trade name "SO-25R", Admatechs (shares Manufacture) 100 parts by mass and a hardening catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a solid content concentration of 20% by mass Adhesive composition F. Next, it was coated on the surface of the PET separator (50 μm in thickness) on which the polysiloxane treatment was performed, and heated at 130 ° C. for 2 minutes to desolvate the solvent to produce a 10 μm thick viscous film F. The content ratio of the acrylic resin relative to the total mass of the organic components (the total mass of the components excluding spherical silica) in the viscous film F and the content ratio of silicon dioxide to the total mass of the viscous film F Shown in Table 1. (Production of the cut crystal sticky film) A cut crystal sticky film was produced in the same manner as in Example 1 except that the sticky film F was used instead of the sticky film A. Comparative Example 4 (production of a sticky crystal film) 100 parts by mass of an acrylic resin (trade name "SG-P3", made by Nagase chemteX (stock), glass transition temperature 12 ° C), epoxy resin (trade name "JER1001", 45 parts by mass of Mitsubishi Chemical Corporation, 50 parts by mass of phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Chemical Co., Ltd.), spherical silica (trade name "SO-25R", Admatechs (shares ) 250 parts by mass and a hardening catalyst (trade name "Curezol 2PHZ", manufactured by Shikoku Chemical Industry Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a solid content concentration of 20% by mass. Adhesive composition G. Next, it was coated on the surface of the PET-based separator (50 μm in thickness) on which the polysiloxane treatment was performed, and heated at 130 ° C. for 2 minutes to desolvate the solvent to produce a 10 μm thick crystal film G. The content ratio of the acrylic resin relative to the total mass of the organic component (the total mass of the component excluding spherical silica) in the viscous film G and the content ratio of the silicon dioxide to the total mass of the viscous film G Shown in Table 1. (Production of the cut crystal sticky film) A cut crystal sticky film was produced in the same manner as in Example 1 except that the sticky film G was used instead of the sticky film A. <Evaluation> The following evaluations were performed about the viscous crystal film and the cut crystal viscous film obtained in the Example and the comparative example. The results are shown in Table 1. (Storage elastic modulus E 'at 25 ° C measured at a frequency of 10 Hz and storage elastic modulus E' at -15 ° C measured at a frequency of 10 Hz) Examples and comparisons using a cutter A short strip having a width of 4 mm and a length of 40 mm was cut out of each of the viscous crystal films obtained in the example as a test piece, and a solid viscoelasticity measuring device (measurement device: Rheogel-E4000, manufactured by UBM) was used. Under the conditions of a speed of 5 ° C / min and an initial chuck distance of 22.5 mm, the dynamic storage elastic modulus was measured in a tensile mode in a temperature range of -50 to 100 ° C. And read the values at 25 ° C and -15 ° C as the storage elastic modulus at 25 ° C measured at a frequency of 10 Hz and the storage elastic modulus at -15 ° C measured at a frequency of 10 Hz. E 'to get these values. The evaluation results are shown in the columns of "Storage elastic modulus E '(25 ° C, 10 Hz)" and "Storage elastic modulus E' (-15 ° C, 10 Hz)" in Table 1, respectively. (Storage elastic modulus G 'at 130 ° C measured at a frequency of 1 Hz and loss elastic modulus G at 130 ° C measured at a frequency of 1 Hz.) The laminated layer of the obtained viscous crystal film was 300 μm, which was punched into a circular shape with a 10 mmΦ punch to make a measurement sample. Using an 8 mmΦ measuring jig, measure the storage elastic modulus and loss elastic modulus in the range of 75 ~ 150 ° C under the conditions of a gap of 250 μm, a heating rate of 10 ° C / min, a frequency of 5 rad / sec, and a strain of 10%. Number (measurement device: HAAKE MARSIII, manufactured by Thermo Scientific). In addition, read the values of the storage elastic modulus and loss elastic modulus at 130 ° C, and use these values as the storage elastic modulus G 'measured at 130 ° C and the frequency at 1 Hz, respectively. It is obtained by measuring the loss elastic modulus G '' at 130 ° C under the conditions. The evaluation results are shown in the columns of "Storage elastic modulus G '(130 ° C, 1 Hz)" and "Loss elastic modulus G" (130 ° C, 1 Hz) in Table 1. (The storage elastic modulus E 'at 150 ° C after thermal curing at a frequency of 10 Hz and the storage elastic modulus E' at 250 ° C after thermal curing at a frequency of 10 Hz. After the viscous crystal films obtained in the examples and comparative examples were heated at 175 ° C for 1 hour for curing, a short strip of 4 mm in width and 40 mm in length was cut from the viscous film cured by heat using a cutter. The test piece used a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric), under the conditions of a frequency of 10 Hz, a heating rate of 10 ° C./minute, and an initial chuck distance of 22.5 mm, within a temperature range of 0 to 300 ° C. , The elastic modulus of dynamic storage was measured in tensile mode. And read the values at 150 ° C and 250 ° C, and use these values as the storage elastic modulus at 150 ° C after thermal curing at 10 Hz and the condition at 10 Hz after thermal curing, respectively. It was obtained by measuring the storage elastic modulus E 'at 250 ° C. The evaluation results are shown in the columns of "Storage elastic modulus E '(150 ° C, 10 Hz) after curing" and "Storage elastic modulus E' (250 ° C, 10 Hz) after curing" in Table 1. (Severance and bulge during cold expansion) Using the brand name "ML300-Integration" (manufactured by Tokyo Precision Co., Ltd.) as a laser processing device, the light focusing point is aligned with the inside of a 12-inch semiconductor wafer, along the grid Shaped (10 mm × 10 mm) division lines are irradiated with laser light from the surface to form a modified region inside the semiconductor wafer. Laser light is irradiated under the following conditions. (A) Laser light Laser light source Semiconductor laser excited Nd: YAG laser Wavelength 1064 nm Laser spot cross-section area 3.14 × 10^-8 cm² Oscillation type Q switching pulse repetition frequency 100 kHz Pulse width 30 ns Output 20 μJ / pulse laser light quality TEM00 40 Polarization characteristics Linearly polarized light (B) 50 times magnification for condenser lens NA 0.55 Transmittance to laser light wavelength 60% (C ) The moving speed of the mounting table on which the semiconductor substrate is placed is 100 mm / sec. After forming a modified region inside the semiconductor wafer, a protective tape for back grinding is attached to the surface of the semiconductor wafer, and a back grinding machine (trade name "DGP8760" is used). ", Manufactured by DISCO, Inc.) The back surface is ground so that the thickness of the semiconductor wafer becomes 30 μm. The semiconductor wafer and the crystal ring having the modified region are formed by bonding the crystal die bonding film obtained in the embodiment and the comparative example. In addition, a die separator (trade name "DDS2300", manufactured by DISCO Corporation) was used to cut the semiconductor wafer and the die attach film. Specifically, first, in a cold expansion unit, cold expansion is performed at a temperature of -15 ° C, an expansion speed of 200 mm / sec, and an expansion amount of 12 mm, and the semiconductor wafer and the die-bonding film are cut. Thereafter, in a heating expansion unit, expansion was performed at room temperature, expansion speed of 1 mm / sec, and expansion amount of 7 mm at room temperature. Furthermore, while maintaining the expanded state, the dicing tape was thermally contracted on the outer peripheral portion of the semiconductor wafer under the conditions of a heating temperature of 200 ° C, an air volume of 40 L / min, a heating distance of 20 mm, and a rotation speed of 5 ° / sec. In addition, a 50-chip pick-up evaluation was performed on the above samples using a die-bonding machine (trade name "Die bonder SPA-300", manufactured by Shinkawa Co., Ltd.) at a pick-up height of 5,500 μm, and the ratio of successful pick-up was A case of 90% or more was evaluated as ○, and a case of less than 90% was evaluated as ×. The evaluation results are shown in the "Severability" column in Table 1. In addition, the area of the bulged portion of the self-cutting band of the viscous crystal film in the released state was observed with a microscope (the ratio of the area of the semiconductor wafer with the viscous film attached to the bump when the entire area of the viscous film was 100% ), The case where the area of the bulge is less than 30% is evaluated as ○, and the case where the area is 30% or more is evaluated as ×. The evaluation results are shown in the column of "bulge during cold expansion" in Table 1. (Swelling during expansion at normal temperature) After the above-mentioned evaluation of the swelling during cold expansion, Die Separator (trade name "DDS2300", manufactured by DISCO) was used in this heated expansion unit at room temperature and expansion speed of 1 mm / Expansion at room temperature under conditions of 2 seconds and an expansion of 7 mm. Furthermore, while maintaining the expanded state, the dicing tape was thermally contracted on the outer peripheral portion of the semiconductor wafer under the conditions of a heating temperature of 200 ° C, an air volume of 40 L / min, a heating distance of 20 mm, and a rotation speed of 5 ° / sec. In addition, the area of the raised portion of the self-cutting band of the viscous crystal film in this state (the ratio of the area of the semiconductor wafer with the viscous film attached when the area of the entire viscous film is 100%) is observed with a microscope. A case where the area of the bulge was less than 30% was evaluated as ○, and a case where the area was 30% or more was evaluated as ×. The evaluation results are shown in the column of "Swell at expansion at normal temperature" in Table 1. (Elevation over time after expansion at normal temperature) In the above-mentioned evaluation at normal temperature expansion, the dicing tape was heat-shrinked and after 3 hours, the area of the crystalline film self-cutting ridge raised area was observed with a microscope (the entire crystalline film When the area is set to 100%, the ratio of the area of the semiconductor wafer with a sticky crystal film attached to the ridges is evaluated. The case where the area of the ridges is less than 30% is evaluated as ○, and the case where the area is 30% or more is evaluated as ×. The evaluation results are shown in the column of "Elevation over time" in Table 1. (Pickability) After the above evaluation of the bulge during expansion at room temperature, the product name "Die bonder SPA-300" (manufactured by Shinkawa Co., Ltd.) was used, the jacking speed was set to 1 mm / sec, and the jacking amount was set to 500 μm. , The number of pins is set to 5, try to pick up 50 semiconductor wafers with adhesive crystal film. In addition, 50 cases where all of them were successfully picked up were evaluated as ○, and even one case where they could not be picked up or a case where a bump had occurred was evaluated as ×. The evaluation results are shown in the column of "pickability" in Table 1. (Die Bonding Suitability) Using "Die bonder SPA-300" (manufactured by Shinkawa Co., Ltd.), a mirror wafer of 15 mm × 15 mm at a platform temperature of 120 ° C, a sticky crystal load of 1000 gf, and a sticky crystal time of 1 second (mirror chip) bonding, confirm the bulge of the four corners of the wafer. The observation was performed using an ultrasonic imaging device (trade name "FS200II", manufactured by Hitachi FineTech Co., Ltd.). The binarization software (WinRoof ver. 5.6) was used to calculate the area occupied by the ridges in the observation image. A case where the area occupied by the voids was less than 5% of the surface area of the adhesive sheet was determined to be "○", and a case where the area was 5% or more was determined to be "x". The evaluation results are shown in the column of "adhesiveness to sticky crystals" in Table 1. (Suitability for wire bonding) A wafer for dicing with a thickness of 30 μm was obtained by grinding a wafer having aluminum vapor deposition on one side. The wafer for dicing was attached to the dicing die-bonding film obtained in the examples and comparative examples, and then cut to a size of 10 mm square to obtain a dicing-die-attached wafer. At 120 ° C, 0.1 MPa, 1 second, the wafer was bonded with a die-bond film on a copper lead frame. A wire bonding device (Maxum Plus manufactured by K & S) was used to bond five gold wires with a diameter of 18 μm to one wafer. The gold wire was driven into a copper lead frame with an output of 80 Amp, a time of 10 ms, and a load of 50 g. The gold wire was driven into the wafer at 150 ° C, output 125 Amp, time 10 ms, and load 80 g. A case where one or more of the five gold wires could not be bonded to the wafer was judged as X, and a case where five of the five gold wires could be joined to the wafer was judged as ○. The evaluation results are shown in the column of "fitness for wire bonding" in Table 1. (Reflowability) The sticky crystal films obtained in the examples and comparative examples were attached to a semiconductor device having a thickness of 9.5 mm × 9.5 mm and a thickness of 200 μm at 70 ° C., and mounted at 120 ° C., 0.1 MPa, and 1 second. On the lead frame, the thus obtained person was subjected to 175 ° C × 1 hour (pressure 7 kg / cm) by means of a pressure dryer.² ), Followed by a mold casting step using a sealing resin. After that, a moisture absorption of 85 ° C / 60% RH × 168 h was performed, and the sample was passed through an IR (Infrared) reflow furnace that was set to maintain a temperature of 260 ° C or higher for 30 seconds. The wafer was observed with an ultrasonic imaging device (Hitachi FineTech (KK), FS200II) for peeling at the interface between the wafer and the substrate, and the probability of peeling was calculated. Nine evaluations were performed, and all cases where no peeling occurred were set to ○, and even if one peeling was confirmed, it was set to x. The evaluation results are shown in the column of "Reflowability" in Table 1. [Table 1]

1‧‧‧ cut crystal film

10‧‧‧ cut crystal ribbon

11‧‧‧ Substrate

12‧‧‧ Adhesive layer

20, 21‧‧‧ Sticky Crystal Film

W, 30A‧‧‧Semiconductor wafer

30B‧‧‧Semiconductor Wafer Split

30C‧‧‧Semiconductor wafer

30a‧‧‧ split groove

30b‧‧‧Modified area

31‧‧‧semiconductor wafer

41‧‧‧ ring frame

42‧‧‧ retainer

43‧‧‧ jacking member

44‧‧‧pin member

45‧‧‧Adsorption fixture

51‧‧‧ adherend

52‧‧‧ bonding wire

53‧‧‧sealing resin

R‧‧‧ Irradiated area

T1‧‧‧ Wafer Processing Tape

T1a‧‧‧ Adhesive surface

T2‧‧‧ Wafer Processing Tape

T2a‧‧‧ Adhesive surface

T3‧‧‧ Wafer Processing Tape

T3a‧‧‧ Adhesive surface

Wa‧‧‧Part 1

Wb‧‧‧Part 2

FIG. 1 is a schematic cross-sectional view showing an embodiment of a cut-to-slice adhesive film according to the present invention. 2 (a) to (d) show steps of a part of a method for manufacturing a semiconductor device using the die-cut die-bond film of the present invention. 3 (a) and 3 (b) show steps of a part of a method for manufacturing a semiconductor device using the die-cut die-bond film of the present invention. 4 (a) to (c) show steps of a part of a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 5 (a) and 5 (b) are diagrams showing a part of the steps of a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. FIG. 6 shows steps of a part of a method of manufacturing a semiconductor device using the die-cut die-bond film of the present invention. Figs. 7 (a) to (c) show steps of a part of a method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. FIG. 8 shows steps of a part of a modified example of a method for manufacturing a semiconductor device using the die-cut die-bond film of the present invention. Figs. 9 (a) and 9 (b) show the steps of a part of a modified example of a method of manufacturing a semiconductor device using the die-cut die-bond film of the present invention. FIGS. 10 (a) to (c) are steps showing a part of a modified example of a method for manufacturing a semiconductor device using the die-cut die-bond film of the present invention. 11 (a) and 11 (b) are diagrams showing part of the steps of a modified example of a method for manufacturing a semiconductor device using the die-cut die-bond film of the present invention.

Claims (5)

A cut crystal sticky film includes a cut crystal band having a substrate and an adhesive layer laminated on the base material, and a sticky film laminated on the adhesive layer of the cut crystal band, and the sticky crystal The storage elastic modulus E 'of the film at 25 ° C measured at a frequency of 10 Hz was 3 to 5 GPa. For example, the cut-to-size adhesive film of claim 1, wherein the storage elastic modulus E ′ of the above-mentioned adhesive film at -15 ° C. measured at a frequency of 10 Hz is 4 to 7 GPa. For example, the cut crystal film of claim 1 or 2 in which the storage elastic modulus E ′ at 150 ° C. measured at a frequency of 10 Hz after heat curing shows 20 to 200 MPa, and the frequency The storage elastic modulus E 'at 250 ° C measured under the condition of 10 Hz shows 20 to 200 MPa. For example, the cut crystal sticky film of claim 1 or 2, wherein the storage elastic modulus G 'of the sticky film at 130 ° C measured at a frequency of 1 Hz is 0.03 to 0.7 MPa. For example, the cut crystal sticky film of claim 1 or 2, wherein the loss elastic modulus G '' of the above sticky film measured at a frequency of 1 Hz at 130 ° C is 0.01 to 0.1 MPa.