JP2022000933A - Dicing die bonding film - Google Patents

Abstract

To provide a dicing die bonding film in which lifting hardly occurs between a die bonding film and an adhesive layer during normal temperature expansion and thereafter, while the dicing die bonding film is excellent in pickup aptitude and die bonding aptitude for a die bonding film.SOLUTION: A dicing die bonding film includes a dicing tape including a substrate and an adhesive layer laminated on the substrate, and a die bonding film laminated on the adhesive layer in the dicing tape. The die bonding film has a storage modulus E' at 25°C of 3-5 GPa, the storage modulus being measured in a condition of frequency 10 Hz.SELECTED DRAWING: Figure 1

Description

The present invention relates to a dicing die bond film. More specifically, the present invention relates to a dicing die bond film that can be used in the manufacturing process of a semiconductor device.

Conventionally, a dicing tape or a dicing die bond film may be used in the manufacture of a semiconductor device. The dicing tape has a form in which an adhesive layer is provided on a base material, and a semiconductor wafer is arranged on the adhesive layer so that individualized semiconductor chips do not scatter during dicing (cutting) of the semiconductor wafer. It is used for fixing to a wafer (see, for example, Patent Document 1).

The dicing die bond film is provided on the adhesive layer of the dicing tape so that the die bond film can be peeled off. In the manufacture of a semiconductor device, a semiconductor wafer is held on a dicing film of a dicing die bond film, and the semiconductor wafer is diced into individual semiconductor chips. Then, for example, through a cleaning step, the semiconductor chip is picked up from the dicing tape together with the die bond film and peeled off, and the semiconductor chip is temporarily fixed (die bonded) to an adherend such as a lead frame via the die bond film. Therefore, it is important that the dicing film in the dicing die bond film is excellent in peelability from the dicing tape (pickup suitability) at the time of picking up, and excellent in adhesiveness to the adherend (die bond suitability) at the time of dicing bonding.

When a dicing dicing film in which a dicing film is laminated on a dicing tape is used and a semiconductor wafer is diced while holding the dicing film, it is necessary to cut the dicing film at the same time as the semiconductor wafer. However, in a general dicing method using a diamond blade, adhesion between the die bond film and the dicing tape due to the influence of heat generated during dicing, adhesion between semiconductor chips due to generation of cutting chips, and cutting chips on the side surface of the semiconductor chip. Since there is a concern about the adhesion of diamonds, it is necessary to slow down the cutting speed, which has led to an increase in cost.

Therefore, in recent years, a method of obtaining individual semiconductor chips by forming a groove on the surface of a semiconductor wafer and then performing backside grinding (sometimes referred to as "DBG (Dicing Before Grinding)") (for example, Patent Document 2). (See) or by irradiating the planned division line of the semiconductor wafer with laser light to form a modified region, the semiconductor wafer can be easily divided on the planned division line, and then this semiconductor wafer is used as a dicing die bond film. After sticking, the semiconductor wafer and the dicing film are both cut (broken) by expanding the dicing tape at a low temperature (for example, 25 to 0 ° C.) (hereinafter, may be referred to as “cool expand”). A method for obtaining individual semiconductor chips (semiconductor chips with a dicing film) has been proposed (see, for example, Patent Document 3). This is a so-called stealth dicing (registered trademark) method. Further, in the DBG as well, the obtained individual semiconductor chips are attached to the dicing die bond film, and then the dicing tape is cool-expanded to cut the die bond film into a size corresponding to the individual semiconductor chips, and the individual die bonds are obtained. A method for obtaining a semiconductor chip with a film is also known. As described above, when the die bond film is cut by the cool expand, it is important that the die bond film in the dicing die bond film has excellent breakability at the time of the cool expand.

Japanese Unexamined Patent Publication No. 2011-216563 Japanese Patent Application Laid-Open No. 2003-007649 Japanese Unexamined Patent Publication No. 2009-164556

In DBG, stealth dicing, etc., after dicing the dicing film, the dicing die bond film is expanded at around room temperature (hereinafter, may be referred to as "normal temperature expanded"), and the distance between adjacent semiconductor chips with die bond films. Then, the outer peripheral portion of the semiconductor chip is thermally shrunk (hereinafter, may be referred to as “heat shrink”) to fix the semiconductor chips while widening the distance between the semiconductor chips. The chip can be easily picked up.

In recent years, due to the need for higher capacity semiconductors, the number of circuit layers has been increased and the number of silicon layers has been reduced. However, as the thickness (total thickness) of the circuit layer increases due to the multi-layered circuit layer, the proportion of the resin contained in the circuit layer tends to increase, which causes the multi-layered circuit layer and the thin layer. The difference in linear expansion coefficient from the layered silicon layer becomes remarkable, and the semiconductor chip tends to warp. Therefore, in particular, a semiconductor chip having a multi-layered circuit layer with a dicing film, which is obtained after dicing, is used at the interface between the adhesive layer of the dicing tape and the dicing film during normal temperature expansion and thereafter (for example, until picking up). Floating (peeling) was likely to occur during the period.

The present invention has been made in view of the above problems, and an object thereof is to have excellent pick-up suitability and die bond suitability of a die bond film, but to have a floating between the die bond film and the pressure-sensitive adhesive layer at the time of room temperature expansion and thereafter. The purpose is to provide a dicing die bond film that is unlikely to occur.

As a result of diligent studies to achieve the above object, the present inventors have made a semiconductor chip in which the circuit layer is multi-layered by using a dicing tape in which the storage elastic modulus E'at 25 ° C. of the die bond film is within a specific range. It was found that even when the dicing film was used, the die-bonded film was excellent in pick-up suitability and die-bonding suitability, but was less likely to float during and after the room temperature expansion. The present invention has been completed based on these findings.

That is, the present invention has a dicing tape having a base material, a pressure-sensitive adhesive layer laminated on the base material, and a dicing film laminated on the pressure-sensitive adhesive layer in the dicing tape. Provided is a dicing die bond film having a storage elastic modulus E'at 3 to 5 GPa at 25 ° C. measured under the condition of a frequency of 10 Hz.

The dicing die bond film of the present invention has a storage elastic modulus E'at 25 ° C. of the die bond film measured under the condition of a frequency of 10 Hz, which is 3 GPa or more, which is relatively higher than the storage elastic modulus of the conventional dicing die bond film. When stress is applied in a relatively slow speed region at room temperature, the dicing film becomes difficult to move in the vertical direction (thickness direction), and not only semiconductor chips that are not multi-layered but also semiconductors that have multi-layered circuit layers are used. Even when a chip is used, it is possible to prevent the dicing film from floating from the dicing tape during and after the room temperature expansion (for example, including the cleaning step and before picking up). Nevertheless, when the individualized die bond film is intentionally picked up from the dicing tape and peeled off, stress is applied in a relatively high speed region, so that the individualized die bond film can be easily picked up. Further, by controlling the storage elastic modulus E'of the die bond film at 25 ° C., which is measured under the condition of a frequency of 10 Hz, to 5 GPa or less, the die bond film has excellent wettability to the adherend during die bonding, so that the die bond film is suitable for die bond. It is excellent and can be satisfactorily performed when die bonding (temporarily fixing) a semiconductor chip to an adherend. As described above, when the dicing die bond film of the present invention is used, when the storage elastic modulus E'at 25 ° C. measured under the condition of a frequency of 10 Hz is 3 GPa or more, stress is applied in a relatively slow speed region. Both the characteristic that it is difficult to cause floating and the characteristic that it is easy to pick up with a pickup that is stressed in a relatively high speed region can be satisfied.

Further, in the dicing die bond film of the present invention, the storage elastic modulus E'at -15 ° C. measured under the condition of a frequency of 10 Hz of the dicing die bond film is preferably 4 to 7 GPa. By setting the storage elastic modulus E'of the die-bonded film at -15 ° C. measured under the condition of a frequency of 10 Hz within the range of 4 to 7 GPa, which is relatively higher than the storage elastic modulus of the conventional die-bonded film, at low temperatures. When stress is applied, the die bond film becomes difficult to move in the vertical direction (thickness direction), and it is cool not only for semiconductor chips that are not multi-layered but also for semiconductor chips with multi-layered circuit layers. It is possible to prevent the die bond film from floating from the dicing tape during expansion and thereafter (for example, until the temperature is returned to room temperature). In addition, the die bond film can be easily cut by the cool expand. Therefore, when the dicing die bond film having the above configuration is used, even when a semiconductor chip having a multi-layered circuit layer is used, the dicing die bond film is excellent in splittability, pickup suitability, and die bond suitability at the time of cool expansion. , At the time of cool expansion, at room temperature expansion, and after that, floating is unlikely to occur.

Further, the die bond film in the dicing die bond film of the present invention exhibits a storage elastic modulus E'20 to 200 MPa at 150 ° C. measured under the condition of a frequency of 10 Hz after thermal curing, and is measured under the condition of a frequency of 10 Hz. It is preferable to show a storage elastic modulus E'20 to 200 MPa at 250 ° C. When a semiconductor chip is die-bonded to an adherend via a die-bonding film and then a wire bonding step described later is performed, the die-bonding film rises to about 150 ° C. due to the heat generated by the heating during the wire bonding in the wire bonding step. Although it may be warmed, after the heat-curing, the die-bond film exhibits a storage elastic coefficient E'20 to 200 MPa at 150 ° C. measured under the condition of a frequency of 10 Hz, so that the heat-cured die-bond film is moderately hard. Even when the temperature is raised to about 150 ° C. in the wire bonding step, the semiconductor chip does not move easily due to the impact of wire bonding, the force is easily transmitted to the wire bonding pad, and the wires can be appropriately bonded. Further, as a reliability evaluation of semiconductor-related parts, a moisture-resistant solder reflow test in which the semiconductor-related parts are heated to about 250 ° C. is generally performed, and the die-bonded film is measured under the condition of a frequency of 10 Hz after being thermally cured 250. By exhibiting the storage elastic modulus E'20 to 200 MPa at ° C., it is possible to prevent the die bond film from peeling from the adherend even when heated to about 250 ° C. in the moisture-resistant solder reflow test. That is, when the above two storage elastic moduli E'after the thermosetting of the die bond film are each within the above ranges, the adhesive stability after the semiconductor chip is fixed is excellent.

Further, in the dicing die bond film of the present invention, the storage elastic modulus G'at 130 ° C. of the dicing die bond film measured under the condition of a frequency of 1 Hz is preferably 0.03 to 0.7 MPa. As a result, it is possible to make it more difficult for the chip to float during die bonding. Since it becomes easy to control the storage elastic modulus E'at 25 ° C. within the above range, the die bond suitability for the adherend is improved while making it difficult for floating to occur during cool expansion, normal temperature expansion, and thereafter. It tends to be improved and can be done well when die bonding the semiconductor chip to the adherend.

Further, in the dicing die bond film of the present invention, it is preferable that the loss elastic modulus G'' at 130 ° C. of the dicing die bond film measured under the condition of a frequency of 1 Hz is 0.01 to 0.1 MPa. As a result, it is possible to make it even more difficult for the chip to float during die bonding.

The dicing die bond film of the present invention is excellent in pick-up suitability and die bond suitability of the die bond film, but is less likely to float between the die bond film and the pressure-sensitive adhesive layer at the time of room temperature expansion and thereafter. In particular, even when a semiconductor chip having a multi-layered circuit layer is used, floating is unlikely to occur.

It is sectional drawing which shows one Embodiment of the dicing die bond film of this invention. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the method of manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modification of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modification of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modification of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown. A part of the steps in the modification of the method for manufacturing a semiconductor device using the dicing die bond film of the present invention is shown.

[Dicing die bond film]
The dicing die bond film of the present invention has a dicing tape having a base material, a pressure-sensitive adhesive layer laminated on the base material, and a dicing tape laminated on the pressure-sensitive adhesive layer of the dicing tape. An embodiment of the dicing die bond film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of the dicing die bond film of the present invention.

As shown in FIG. 1, the dicing die bond film 1 includes a dicing tape 10 and a die bond film 20 laminated on the pressure-sensitive adhesive layer 12 of the dicing tape 10, and obtains a semiconductor chip with a dicing film in the manufacture of a semiconductor device. It can be used for the expanding process in the process. Further, the dicing die bond film 1 has, for example, a disk shape having a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The dicing tape 10 in the dicing die bond film 1 has a laminated structure including a base material 11 and an adhesive layer 12.

(Base material)
The base material 11 in the dicing tape 10 is an element that functions as a support in the dicing tape 10 and the dicing die bond film 1. Examples of the base material 11 include a plastic base material (particularly a plastic film). The base material 11 may be a single layer or a laminated body of the same type or different types of base materials.

Examples of the resin constituting the plastic base material include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, and homopolyprolene. , Polybutene, Polymethylpentene, Ethylene-vinyl acetate copolymer (EVA), Ionomer, Ethylene- (meth) acrylic acid copolymer, Ethylene- (meth) acrylic acid ester (random, alternating) copolymer, Ethylene- Polyolefin resins such as butene copolymers and ethylene-hexene copolymers; polyurethane; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT); polycarbonates; polyimides; polyether ether ketones; polyetherimides. Examples thereof include polyamides such as aramid and total aromatic polyamides; polyphenyl sulfides; fluororesins; polyvinyl chlorides; polyvinylidene chlorides; cellulose resins; silicone resins and the like. Only one kind of the above resin may be used, or two or more kinds of the above resin may be used. When the pressure-sensitive adhesive layer 12 is a radiation-curable type as described later, it is preferable that the base material 11 has radiation permeability.

When the base material 11 is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in at least one direction. If the dicing tape 1 has heat shrinkage, the outer peripheral portion of the semiconductor wafer of the dicing tape 1 can be heat-shrinked, whereby the semiconductor chips with the individualized die-bonded films are fixed in a widened state. Therefore, the semiconductor chip can be easily picked up. In order for the base material 11 and the dicing tape 1 to have isotropic heat shrinkage, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching the unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material 11 and the dicing tape 1 preferably have a heat shrinkage rate of 1 to 30%, more preferably 2 to 25%, in a heat treatment test conducted under the conditions of a heating temperature of 100 ° C. and a heating time of 60 seconds. , More preferably 3 to 20%, particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction in the MD direction and the TD direction.

The surface of the base material 11 on the pressure-sensitive adhesive layer 12 side is, for example, corona discharge treatment, plasma treatment, sand mat processing treatment, ozone exposure treatment, flame exposure treatment for the purpose of improving adhesion, retention, etc. with the pressure-sensitive adhesive layer 12. , High piezoelectric shock exposure treatment, physical treatment such as ionizing radiation treatment; chemical treatment such as chromium acid treatment; surface treatment such as easy adhesion treatment with a coating agent (undercoating agent) may be performed. Further, in order to impart antistatic ability, a conductive thin-film layer containing metals, alloys, oxides thereof and the like may be provided on the surface of the base material 11.

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 50 μm or more, from the viewpoint of ensuring the strength for the base material 11 to function as a support in the dicing tape 10 and the dicing die bond film 1. Is 55 μm or more, particularly preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 and the dicing die bond film 1, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, still more preferably 150 μm or less. ..

(Adhesive layer)
The pressure-sensitive adhesive layer 12 is formed of a pressure-sensitive adhesive. The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive (adhesive-reducing pressure-sensitive adhesive) capable of intentionally reducing the pressure-sensitive adhesive force by an external action such as irradiation or heating. It may be an adhesive (adhesive non-reducing type adhesive) whose adhesive strength is hardly or not reduced depending on the action from the outside, and is an individual piece of a semiconductor wafer which is individualized using the dicing die bond film 1. It can be appropriately selected according to the method and conditions of the conversion.

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive strength and a relatively low adhesive strength in the manufacturing process and the usage process of the dicing die bond film 1. And can be used properly. For example, when the die bond film 20 is attached to the pressure-sensitive adhesive layer 12 of the dying tape 10 in the manufacturing process of the dying die bond film 1, or when the dying die bond film 1 is used in the dying step, the pressure-sensitive adhesive layer 12 is relatively high. While it is possible to suppress / prevent the floating of the adherend such as the die bond film 20 from the pressure-sensitive adhesive layer 12 by utilizing the state showing the adhesive strength, after that, the die bond film 10 from the dicing tape 10 of the dicing die bond film 1 can be used. In the pick-up process for picking up the attached semiconductor chip, the pick-up can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer 12.

Examples of such a pressure-reducing pressure-sensitive adhesive include a radiation-curable pressure-sensitive adhesive (a pressure-sensitive adhesive), a heat-foaming type pressure-sensitive adhesive, and the like. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, one kind of pressure-reducing pressure-sensitive adhesive may be used, or two or more types of pressure-reducing pressure-sensitive adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of the pressure-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of the pressure-reducing pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a pressure-reducing pressure-sensitive adhesive, or a predetermined portion of the pressure-sensitive adhesive layer 12 (for example, a semiconductor wafer). The central region, which is the region to be adhered, is formed from the adhesive strength-reducing adhesive, and other parts (for example, the region to be adhered to the wafer ring, which is outside the central region) are non-reduced adhesive strength. It may be formed from a mold adhesive.

As the radiation-curable pressure-sensitive adhesive, for example, a type of pressure-sensitive adhesive that cures by irradiation with electron beam, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used, and the type that cures by irradiation with ultraviolet rays can be used. A pressure-sensitive adhesive (ultraviolet curable pressure-sensitive adhesive) can be particularly preferably used.

The radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Examples include type radiation curable adhesives.

The acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a structural unit of the polymer. The acrylic polymer is preferably a polymer containing the largest amount of structural units derived from (meth) acrylic acid ester in terms of mass ratio. As the acrylic polymer, only one kind may be used, or two or more kinds may be used. Further, in the present specification, "(meth) acrylic" means "acrylic" and / or "methacrylic" (either one or both of "acrylic" and "methacrylic"), and the same applies to the others. ..

Examples of the (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Be done. Examples of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, and pentyl ester of (meth) acrylic acid. Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl ester, Eikosyl ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester and benzyl ester of (meth) acrylic acid. As the above (meth) acrylic acid ester, only one kind may be used, or two or more kinds may be used. In order to appropriately develop the basic properties such as the adhesiveness of the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the (meth) acrylic acid ester in all the monomer components for forming the acrylic polymer is 40. It is preferably mass% or more, more preferably 60% by mass or more.

The acrylic polymer may contain a structural unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester for the purpose of modifying the cohesive force, heat resistance and the like. Examples of the other monomer components include a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylic nitrile. Examples include functional group-containing monomers. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride, itaconic anhydride and the like. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 6-hydroxyhexyl (meth) acrylate. Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, and (meth). ) Acryloyloxynaphthalene sulfonic acid and the like can be mentioned. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacryloyl phosphate and the like. As the above-mentioned other monomer components, only one kind may be used, or two or more kinds may be used. In order to appropriately develop the basic properties such as the adhesiveness of the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the above-mentioned other monomer components to all the monomer components for forming the acrylic polymer is 60% by mass. % Or less, more preferably 40% by mass or less.

The acrylic polymer is a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming the acrylic polymer such as (meth) acrylic acid ester in order to form a crosslinked structure in the polymer skeleton. May include. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, and penta. Elythritol di (meth) acrylate, trimethylolpropantri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (eg, polyglycidyl (meth) acrylate), polyester Examples thereof include monomers having a (meth) acryloyl group and other reactive functional groups in the molecule such as (meth) acrylate and urethane (meth) acrylate. As the polyfunctional monomer, only one kind may be used, or two or more kinds may be used. In order to appropriately develop the basic properties such as the adhesiveness of the (meth) acrylic acid ester in the pressure-sensitive adhesive layer 12, the ratio of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is 40% by mass. % Or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by subjecting one or more monomer components including an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.

The number average molecular weight of the acrylic polymer in the pressure-sensitive adhesive layer 12 is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the number average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and contamination of the die bond film, semiconductor wafer, or the like can be further suppressed.

The radiation-curable pressure-sensitive adhesive may contain a cross-linking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce the low molecular weight substances in the pressure-sensitive adhesive layer 12. Examples of the cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds and the like), aziridine compounds, melamine compounds and the like. When a cross-linking agent is used, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta ( Examples thereof include meta) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and those having a molecular weight of about 100 to 30,000 are preferable. The content of the radiation-curable monomer component and the oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 40 parts by mass with respect to 100 parts by mass of the base polymer. It is about 150 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-Open No. 60-196956 may be used.

The radiation-curable pressure-sensitive adhesive is an intrinsic radiation-curable agent containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or at the end of the polymer main chain in the polymer main chain. Mold adhesives can also be mentioned. When such an intrinsically curable pressure-sensitive adhesive is used, it tends to be possible to suppress unintended changes in adhesive properties over time due to the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 12. ..

As the base polymer contained in the internal radiation curable pressure-sensitive adhesive, an acrylic polymer is preferable. As the acrylic polymer that can be contained in the intrinsic radiation-curable pressure-sensitive adhesive, the acrylic polymer described as the acrylic polymer contained in the additive-type radiation-curable pressure-sensitive adhesive can be adopted. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group is polymerized (copolymerized) to obtain an acrylic polymer. Later, a compound having a second functional group capable of reacting with the first functional group and a radiopolymerizable carbon-carbon double bond is added to an acrylic polymer while maintaining the radiopolymerizability of the carbon-carbon double bond. Examples thereof include a method of subjecting to a condensation reaction or an addition reaction.

Examples of the combination of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, and a hydroxy group and an isocyanate group. Examples thereof include an isocyanate group and a hydroxy group. Among these, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking. Above all, it is technically difficult to prepare a polymer having a highly reactive isocyanate group, and on the other hand, from the viewpoint of easy preparation and availability of an acrylic polymer having a hydroxy group, the above-mentioned first functional group is used. A combination in which the hydroxy group is used and the second functional group is an isocyanate group is preferable. Examples of the compound having an isocyanate group and a radiopolymerizable carbon-carbon double bond in this case include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate and the like. .. The acrylic polymer having a hydroxy group contains the above-mentioned hydroxy group-containing monomer and structural units derived from ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glucol monovinyl ether. Can be mentioned.

The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, and thioxanthone compounds. Examples thereof include camphorquinone, halogenated ketone, acylphosphinoxide, acylphosphonate and the like. Examples of the α-ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl-2-hydroxy. Examples thereof include propiophenone and 1-hydroxycyclohexylphenyl ketone. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl] -2. -Molholinopropane-1 and the like can be mentioned. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether and the like. Examples of the ketal-based compound include benzyldimethyl ketal and the like. Examples of the aromatic sulfonyl chloride compound include 2-naphthalene sulfonyl chloride and the like. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compound include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone and the like. Examples of the thioxanthone-based compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. Examples include thioxanthone. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

The heat-foaming pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands when heated. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium boron hydride, azides and the like. Examples of the organic foaming agent include salt fluoride alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarboxylicamide and barium azodicarboxylate; paratoluene. Hydrazine compounds such as sulfonyl hydrazide, diphenyl sulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allylbis (sulfonylhydrazide); p-toluylene sulfonyl semicarbadide, 4,4'- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morphory-1,2,3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-dimethyl- Examples thereof include N-nitroso compounds such as N, N'-dinitrosoterephthalamide. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that easily gasifies and expands by heating is enclosed in a shell. Examples of the substance that easily gasifies and expands by the above heating include isobutane, propane, and pentane. A heat-expandable microsphere can be produced by encapsulating a substance that easily gasifies and expands by heating in a shell-forming substance by a core selvation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal meltability or a substance that can explode due to the action of thermal expansion of the encapsulating substance can be used. Examples of such substances include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

Examples of the non-adhesive strength-reducing adhesive include a pressure-sensitive adhesive and a pressure-sensitive adhesive, which are obtained by pre-curing the above-mentioned radiation-curable adhesive with respect to the adhesive-reducing adhesive. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12, one kind of non-reducing adhesive strength type adhesive may be used, or two or more kinds of non-reducing pressure-sensitive adhesive strength may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reducing adhesive strength type adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-reducing adhesive strength type pressure-sensitive adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be formed of a non-reducing pressure-sensitive adhesive, or a predetermined portion (for example, wafer ring) in the pressure-sensitive adhesive layer 12. The region to be adhered to, which is the region outside the central region) is formed of the non-adhesive strength non-reducing adhesive, and other portions (for example, the central region to which the semiconductor wafer is to be adhered) have adhesive strength. It may be formed from a reduced pressure-sensitive adhesive. Further, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be formed of a non-reducing adhesive strength type adhesive, and some of the pressure-sensitive adhesive layers in the laminated structure may have adhesive strength. It may be formed from a non-reducing adhesive.

Adhesives in the form of a radiation-curable adhesive that has been cured by irradiation in advance (irradiated radiation-curable adhesive), even if the adhesive strength is reduced by irradiation, are due to the polymer components contained in the adhesive. It is possible to exhibit the properties and exert the minimum required adhesive force on the adhesive layer of the dicing tape in the diving process and the like. When a radiation-irradiated radiation-curable pressure-sensitive adhesive is used, the entire pressure-sensitive adhesive layer 12 may be formed of the radiation-irradiated radiation-curable pressure-sensitive adhesive in the surface spreading direction of the pressure-sensitive adhesive layer 12. A part may be formed from the irradiated radiation-curable pressure-sensitive adhesive and the other part may be formed from the radiation-unirradiated radiation-curable pressure-sensitive adhesive.

As the pressure-sensitive pressure-sensitive adhesive, a known or conventional pressure-sensitive pressure-sensitive adhesive can be used, and an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive using an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as a pressure-sensitive pressure-sensitive adhesive, the acrylic polymer may be a polymer containing a structural unit derived from (meth) acrylic acid ester as the structural unit having the largest mass ratio. preferable. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer contained in the additive-type radiation-curable pressure-sensitive adhesive can be adopted.

The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive layer 12 is a known or commonly used pressure-sensitive adhesive such as a cross-linking accelerator, a pressure-sensitive adhesive, an antiaging agent, and a colorant (pigment, dye, etc.) in addition to the above-mentioned components. Additives used in the agent layer may be blended. Examples of the colorant include compounds that are colored by irradiation. When a compound to be colored by irradiation is contained, only the irradiated portion can be colored. The compound to be colored by the above irradiation is a compound which is colorless or light-colored before the irradiation, but becomes colored by the irradiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by the above irradiation is not particularly limited and can be appropriately selected.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, the viewpoint of balancing the adhesive force of the pressure-sensitive adhesive layer 12 with respect to the die bond film 20 before and after radiation curing. Therefore, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm.

(Die bond film)
The die bond film 20 has a structure that can function as a thermosetting adhesive for die bonding. The die bond film 20 can be cut by applying a tensile stress, and is used by being cut by applying a tensile stress.

As described above, the die bond film 20 has a storage elastic modulus E'at 25 ° C. measured under the condition of a frequency of 10 Hz of 3 to 5 GPa, preferably 3.2 to 4.8 GPa. By setting the storage elastic modulus E'to 3 GPa or more, when stress is applied in a relatively slow speed region at room temperature, the die bond film becomes difficult to move in the vertical direction (thickness direction) and is not multi-layered. Even when a semiconductor chip with multiple layers of circuit layers is used as well as a semiconductor chip, from the dicing tape of the die bond film at the time of room temperature expansion and after that (for example, including the cleaning step and until picking up). It is possible to make it difficult for the float to occur. Further, when the individualized die bond film is intentionally picked up from the dicing tape and peeled off, stress is applied in a relatively high speed region, so that the individualized die bond film can be easily picked up. Further, by setting the storage elastic modulus E'to 5 GPa or less, the die bond film is excellent in wettability to the adherend during die bonding, so that the die bond suitability is excellent, and the semiconductor chip is die bonded (temporarily fixed) to the adherend. It can be done well in some cases.

The die bond film 20 preferably has a storage elastic modulus E'at -15 ° C. measured under the condition of a frequency of 10 Hz of 4 to 7 GPa, more preferably 4.5 to 6.5 GPa. When the storage elastic modulus E'is within the above range, the die bond film becomes difficult to move in the vertical direction (thickness direction) when stress is applied at low temperature, and the circuit layer as well as the semiconductor chip which is not multi-layered becomes difficult to move. Even when a multi-layered semiconductor chip is used, it is possible to prevent the die bond film from floating from the dicing tape during and after the cool expansion (for example, until the temperature is returned to room temperature). In addition, the die bond film can be easily cut by the cool expand.

The die bond film 20 preferably has a storage elastic modulus G'at 130 ° C. measured under the condition of a frequency of 1 Hz of 0.03 to 0.7 MPa, more preferably 0.1 to 0.6 MPa. As a result, it becomes easy to control the storage elastic modulus E'at 25 ° C. within the above range. Aptitude also tends to improve.

The die bond film 20 preferably has a loss elastic modulus G ″ measured at a frequency of 1 Hz at 130 ° C. of 0.01 to 0.1 MPa, more preferably 0.02 to 0.08 MPa. As a result, it is possible to make it even more difficult for the chip to float during die bonding.

After thermosetting, the die bond film 20 preferably has a storage elastic modulus E'20 to 200 MPa at 150 ° C. measured under the condition of a frequency of 10 Hz, and more preferably 22 to 150 MPa. When a semiconductor chip is die-bonded to an adherend in the form of a semiconductor chip with a die-bond film, and then a wire bonding step described later is performed, the die-bond film is heated to 150 ° C. due to the heat generated by heating during the wire bonding step. The temperature may rise to a certain degree, but after the die bond film 20 is thermally cured, the storage elasticity E'in the above range is exhibited at 150 ° C., so that the die bond film after thermal curing is moderately hard, and in the wire bonding step. Even when the temperature is raised to about 150 ° C., the semiconductor chip is difficult to move due to the impact of wire bonding, the force is easily transmitted to the wire bonding pad, and the wires can be appropriately bonded.

After thermosetting, the die bond film 20 preferably has a storage elastic modulus E'20 to 200 MPa at 250 ° C. measured under the condition of a frequency of 10 Hz, and more preferably 22 to 150 MPa. As a reliability evaluation of semiconductor-related parts, a moisture-resistant solder reflow test in which the semiconductor-related parts are heated to about 250 ° C. is generally performed. After the die bond film 20 is thermally cured, the storage elastic modulus E'in the above range is performed at 250 ° C. By showing, it is possible to prevent the die bond film from peeling from the adherend even when it is heated to about 250 ° C. in the moisture-resistant solder reflow test.

After the thermosetting of the above-mentioned die-bonded film, it means that the die-bonded film is heat-cured at 175 ° C. for 1 hour. The thermosetting may be after the die bond film is incompletely cured, or after being cured (completely cured) to a state in which curing hardly progresses further (for example, after incomplete curing and further curing). It may be (after curing by performing a post-curing step described later).

In the present embodiment, the die bond film 20 and the adhesive constituting the die bond film 20 may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, and may react with the curing agent to form a bond. It may contain a thermoplastic resin having a thermosetting functional group to be obtained. When the adhesive constituting the die bond film 20 contains a thermoplastic resin having a thermosetting functional group, the pressure-sensitive adhesive does not need to contain a thermosetting resin (epoxy resin or the like). The die bond film 20 may have a single-layer structure or a multilayer structure.

When the die bond film 20 contains a thermosetting resin together with a thermoplastic resin, the thermosetting resin includes, for example, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting resin. Examples include polyimide resin. As the thermosetting resin, only one kind may be used, or two or more kinds may be used. Epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that can cause corrosion of the semiconductor chip to be die-bonded tends to be small. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and ortho. Examples thereof include cresol novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, glycidylamine type epoxy resin and the like. Of these, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, and a tetraphenylol ethane type epoxy resin are preferable because they are highly reactive with a phenol resin as a curing agent and have excellent heat resistance.

Examples of the phenol resin that can act as a curing agent for the epoxy resin include novolak-type phenol resin, resol-type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin and the like. As the above-mentioned phenol resin, only one kind may be used, or two or more kinds may be used. Among them, phenol novolac resin and phenol aralkyl resin are preferable from the viewpoint of tending to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the die bond film 20, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent amount of epoxy groups in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents.

When the die bond film 20 contains a thermosetting resin, the content ratio of the thermosetting resin is the total mass of the die bond film 20 from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the die bond film 20. On the other hand, it is preferably 5 to 60% by mass, more preferably 10 to 50% by mass.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin and the like. As the thermoplastic resin, only one kind may be used, or two or more kinds may be used. As the thermoplastic resin, an acrylic resin is preferable because it has few ionic impurities and high heat resistance, so that it is easy to secure the bonding reliability by the die bond film 20.

The acrylic resin is preferably a polymer containing a structural unit derived from (meth) acrylic acid ester as the structural unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters forming an acrylic polymer that can be contained in the above-mentioned additive-type radiation-curable pressure-sensitive adhesive. Be done. The acrylic resin may contain a structural unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester. Examples of the other monomer components include functional groups such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Examples thereof include monomers and various polyfunctional monomers, and specific examples thereof include other monomer components constituting the acrylic polymer that can be contained in the above-mentioned radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. Can be used. From the viewpoint of achieving high cohesive force in the die bond film 20, the acrylic resin is preferably a (meth) acrylic acid ester (particularly, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms). , A copolymer of a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), more preferably ethyl acrylate, butyl acrylate, and acrylic acid. , And a copolymer of acrylonitrile and polyglycidyl (meth) acrylate.

The acrylic resin preferably has a glass transition temperature (Tg) of 5 to 35 ° C, more preferably 10 to 30 ° C, from the viewpoint that the respective storage elastic modulus and loss elastic modulus can be easily kept within the desired ranges. Is.

When the die bond film 20 contains a thermoplastic resin together with a thermosetting resin, the content ratio of the thermoplastic resin is adjusted with the content ratio of the thermosetting resin to obtain the respective storage elastic ratio and loss elastic ratio described above. From the viewpoint that it is easy to keep it within the range of 30 to 30 to the total mass of organic components (for example, thermosetting resin, thermoplastic resin, curing catalyst, etc., silane coupling agent, dye) excluding the filler in the die bond film 20. It is preferably 70% by mass, more preferably 40 to 60% by mass, and even more preferably 45 to 55% by mass.

When the die bond film 20 contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in this thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a (meth) acrylic acid ester as the structural unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid esters exemplified as (meth) acrylic acid esters forming an acrylic polymer that can be contained in the above-mentioned additive-type radiation-curable pressure-sensitive adhesive. Be done. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Of these, a glycidyl group and a carboxy group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable. Further, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin, and the curing agent is exemplified as, for example, a cross-linking agent that can be contained in the above-mentioned radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12. Can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as a curing agent, and for example, the above-mentioned various phenol resins can be used.

The die bond film 20 preferably contains a filler. By blending the filler into the die bond film 20, the storage elastic modulus and the loss elastic modulus of the die bond film 20 can be easily adjusted. Furthermore, physical properties such as conductivity, thermal conductivity, and elastic modulus can be adjusted. Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystals. In addition to quality silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black, graphite and the like can be mentioned. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler, only one kind may be used, or two or more kinds may be used.

The average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle size is 0.005 μm or more, the wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. When the average particle size is 10 μm or less, the effect of the filler added for imparting each of the above characteristics can be made sufficient, and heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (for example, trade name "LA-910", manufactured by HORIBA, Ltd.).

When the die bond film 20 contains a filler, the content ratio of the filler is 30 to 70 with respect to the total mass of the die bond film 20 from the viewpoint that the respective storage elastic modulus and loss elastic modulus described above can be easily kept within the desired ranges. The mass% is preferable, more preferably 40 to 60% by mass, still more preferably 42 to 55% by mass.

The die bond film 20 may contain other components, if necessary. Examples of the other components include a curing catalyst, a flame retardant, a silane coupling agent, an ion trapping agent, a dye and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, benzotriazole and the like. As the above-mentioned other additives, only one kind may be used, or two or more kinds may be used.

In particular, the die bond film 20 contains a thermoplastic resin (particularly, an acrylic resin), a thermosetting resin, and a filler from the viewpoint that the respective storage elastic modulus and loss elastic modulus described above can be easily kept within the desired ranges, and the die bond film 20 is contained. The content ratio of the thermoplastic resin (particularly, acrylic resin) to the total mass of the organic components excluding the filler in 20 is 30 to 70% by mass (preferably 40 to 60% by mass, more preferably 45 to 55% by mass). The content ratio of the filler with respect to the total mass of the die bond film 20 is preferably 30 to 70% by mass (preferably 40 to 60% by mass, more preferably 42 to 55% by mass).

The thickness of the die bond film 20 (in the case of a laminated body, the total thickness) is not particularly limited, but is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

The glass transition temperature (Tg) of the die bond film 20 is preferably 0 ° C. or higher, more preferably 10 ° C. or higher. When the glass transition temperature is 0 ° C. or higher, the die bond film 20 can be easily cut by the cool expand. The upper limit of the glass transition temperature of the die bond film 20 is, for example, 100 ° C.

As shown in FIG. 1, the die bond film 20 includes a single-layer die bond film. In addition, in this specification, a single layer means a layer having the same composition, and includes the form in which a plurality of layers having the same composition are laminated. However, the die bond film in the dicing die bond film of the present invention is not limited to this example, and may have, for example, a multilayer structure in which two or more kinds of adhesive films having different compositions are laminated.

The dicing die bond film 1 according to the embodiment of the dicing die bond film of the present invention is manufactured, for example, as follows. First, the base material 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the film-forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry laminating method.

Next, a composition (adhesive composition) for forming a pressure-sensitive adhesive layer, which contains a pressure-sensitive adhesive and a solvent for forming the pressure-sensitive adhesive layer 12, is applied onto the base material 11 to form a coating film, which is necessary. The pressure-sensitive adhesive layer 12 can be formed by solidifying the coating film by removing the solvent, curing, or the like. Examples of the coating method include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal condition is, for example, in the range of a temperature of 80 to 150 ° C. and a time of 0.5 to 5 minutes. Further, the pressure-sensitive adhesive composition may be applied onto the separator to form a coating film, and then the coating film may be solidified under the above-mentioned desolvent conditions to form the pressure-sensitive adhesive layer 12. Then, the pressure-sensitive adhesive layer 12 is bonded onto the base material 11 together with the separator. As described above, the dicing tape 10 can be manufactured.

Regarding the die bond film 20, first, a composition (adhesive composition) for forming the die bond film 20 containing a resin, a filler, a curing catalyst, a solvent, and the like is prepared. Next, the adhesive composition is applied onto the separator to form a coating film, and then the coating film is solidified by desolvation, curing, or the like, if necessary, to form a die bond film 20. The coating method is not particularly limited, and examples thereof include known or conventional coating methods such as roll coating, screen coating, and gravure coating. The solvent removal condition is, for example, in the range of a temperature of 70 to 160 ° C. and a time of 1 to 5 minutes.

Subsequently, the separators are peeled off from the dicing tape 10 and the die bond film 20, respectively, and the die bond film 20 and the pressure-sensitive adhesive layer 12 are bonded together so as to be a bonding surface. The bonding can be performed by, for example, crimping. At this time, the laminating temperature is not particularly limited, and is, for example, preferably 30 to 50 ° C, more preferably 35 to 45 ° C. The linear pressure is not particularly limited, and is, for example, preferably 0.1 to 20 kgf / cm, more preferably 1 to 10 kgf / cm.

As described above, when the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the bonding of the die bond film 20, for example, the pressure-sensitive adhesive layer 12 is adhered from the side of the base material 11. The agent layer 12 is irradiated with radiation, and the irradiation amount thereof is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. The region (irradiation region R) in which the dicing die bond film 1 is irradiated as a measure for reducing the adhesive strength of the pressure-sensitive adhesive layer 12 is usually a region in the pressure-sensitive adhesive layer 12 excluding the peripheral portion in the region where the adhesive film 20 is bonded. be. When the irradiation region R is partially provided, it can be performed through a photomask having a pattern corresponding to the region other than the irradiation region R. Further, a method of forming an irradiation region R by irradiating radiation in a spot manner can also be mentioned.

As described above, for example, the dicing die bond film 1 shown in FIG. 1 can be produced. The dicing die bond film 1 may be provided with a separator (not shown) on the die bond film 20 side in a form of covering at least the die bond film 20. When the die bond film 20 is smaller in size than the pressure-sensitive adhesive layer 12 of the dicing tape 10 and there is a region in the pressure-sensitive adhesive layer 12 where the die-bond film 20 is not bonded, for example, the separator may be a die-bond film 20 and the pressure-sensitive adhesive layer 12. At least, it may be provided in a form of covering. The separator is an element for protecting at least the die bond film 20 (for example, the die bond film 20 and the pressure-sensitive adhesive layer 12) from being exposed, and is peeled off from the dicing die bond film 1 when it is used. Examples of the separator include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, plastic films and papers surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. ..

[Manufacturing method of semiconductor devices]
A semiconductor device can be manufactured using the dicing die bond film of the present invention. Specifically, a step of attaching a fragment of a semiconductor wafer containing a plurality of semiconductor chips or a semiconductor wafer that can be fragmented to a plurality of semiconductor chips on the dicing die bond film side of the dicing die bond film of the present invention (“step”). A ”) and a step of expanding the dicing tape in the dicing die bond film of the present invention under relatively low temperature conditions and at least cutting the dicing film to obtain a semiconductor chip with a die bond film (a step of obtaining a semiconductor chip with the dicing die bond film). A step (sometimes referred to as "step B") and a step of expanding the dicing tape under relatively high temperature conditions to widen the distance between the semiconductor chips with the die bond film (sometimes referred to as "step C"). A semiconductor device can be manufactured by a manufacturing method including the above-mentioned step of picking up a semiconductor chip with a dicing film (sometimes referred to as "step D").

A semiconductor wafer divided into the above-mentioned semiconductor wafers including the plurality of semiconductor chips used in the step A, or a semiconductor wafer that can be fragmented into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 2A and 2B, a dividing groove 30a is formed in the semiconductor wafer W (divided groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. Then, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the first semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a having a predetermined depth is formed on the surface Wa side by using a rotating blade such as a dicing device. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 2 to 4, the dividing groove 30a is schematically represented by a thick line).

Next, as shown in FIG. 2C, the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W is attached. And peel off.

Next, as shown in FIG. 2D, with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning process). The grinding process can be performed using a grinding device equipped with a grinding wheel. By this wafer thinning step, in the present embodiment, a semiconductor wafer 30A that can be fragmented is formed on a plurality of semiconductor chips 31. Specifically, the semiconductor wafer 30A has a portion (connecting portion) for connecting a portion of the wafer to be fragmented into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is appropriately selected by the semiconductor device to be manufactured.

(Step A)
In the step A, a fragment of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be individualized is attached to the plurality of semiconductor chips on the die bond film 20 side of the dicing die bond film 1.

In one embodiment in step A, as shown in FIG. 3A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the die bond film 20 of the dicing die bond film 1. After that, as shown in FIG. 3B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bond film 1 is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is bonded to the die-bond film 20 instead of the above-mentioned radiation irradiation in the manufacturing process of the dicing die-bond film 1. After that, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11. The irradiation amount is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. The region (irradiation region R shown in FIG. 1) in which the dicing die bond film 1 is irradiated as a measure for reducing the adhesive strength of the pressure-sensitive adhesive layer 12 is, for example, a peripheral portion of the pressure-sensitive adhesive layer 12 in the region where the pressure-sensitive adhesive layer 20 is bonded. This is the area excluding.

(Step B)
In step B, the dicing tape 10 in the dicing die bond film 1 is expanded under relatively low temperature conditions, and at least the dicing film 20 is cut to obtain a semiconductor chip with a dicing film.

In one embodiment of the step B, first, the ring frame 41 is attached on the adhesive layer 12 of the dicing tape 10 in the dicing die bond film 1, and then, as shown in FIG. 4A, the semiconductor wafer 30A is attached. The dicing die bond film 1 is fixed to the holder 42 of the expanding device.

Next, the first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 4 (b) to separate the semiconductor wafer 30A into a plurality of semiconductor chips 31. The dicing film 20 of the dicing die bond film 1 is cut into small pieces of the die bond film 21 to obtain a semiconductor chip 31 with the die bond film. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film 1 and raised, and the dicing die bond film 1 bonded to the semiconductor wafer 30A is raised. The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably -15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding step is preferably 0.1 to 100 mm / sec. The amount of expansion in the cool expanding step is preferably 3 to 16 mm.

In step B, when a semiconductor wafer 30A that can be fragmented is used for a plurality of semiconductor chips, the thin-walled and fragile portions of the semiconductor wafer 30A are split, resulting in fragmentation into the semiconductor chip 31. At the same time, in step B, in the die bond film 20 in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region in which each semiconductor chip 31 is in close contact, while the semiconductor chip 31 is suppressed. The tensile stress generated in the dicing tape 10 acts on the portion of the dividing groove between the dicing grooves located in the vertical direction in the figure without such a deformation suppressing action. As a result, the portion of the die bond film 20 located in the vertical direction of the dividing groove between the semiconductor chips 31 is cut. After the split by expanding, as shown in FIG. 4C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

(Process C)
In step C, the dicing tape 10 is expanded under relatively high temperature conditions to widen the distance between the semiconductor chips with the die bond film.

In one embodiment of step C, first, a second expanding step (normal temperature expanding step) under relatively high temperature conditions is performed as shown in FIG. 5A, and the distance between the semiconductor chips 31 with a die bond film 31 is performed. Increase (separation distance). In step C, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film 1 is expanded. The temperature condition in the second expanding step is, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed for raising the push-up member 43) in the second expanding step is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The amount of expansion in the second expanding step is, for example, 3 to 16 mm. In step C, the separation distance of the semiconductor chip 31 with a die bond film is widened to such an extent that the semiconductor chip 31 with a die bond film can be appropriately picked up from the dicing tape 10 in the pickup step described later. After widening the separation distance by expanding, as shown in FIG. 5B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. From the viewpoint of suppressing the separation distance of the semiconductor chip 31 with the die bond film on the dicing tape 10 from being narrowed after the expanded state is released, the portion outside the semiconductor chip 31 holding region of the dicing tape 10 is formed before the expanded state is released. It is preferable to heat and shrink.

After the step C, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with a die bond film using a cleaning liquid such as water may be provided, if necessary.

(Step D)
In step D (pickup step), a semiconductor chip with a die-bonded film is picked up. In one embodiment of the step D, after the cleaning step is performed as necessary, the semiconductor chip 31 with the die bond film is picked up from the dicing tape 10 as shown in FIG. For example, with respect to the semiconductor chip 31 with a dicing film to be picked up, the pin member 44 of the pick-up mechanism is raised on the lower side in the drawing of the dicing tape 10, pushed up through the dicing tape 10, and then sucked and held by the suction jig 45. .. In the pickup step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 100 to 500 μm.

The method for manufacturing a semiconductor device may include steps other than steps A to D. For example, in one embodiment, as shown in FIG. 7A, the picked up semiconductor chip 31 with a die bond film is temporarily fixed to the adherend 51 via the die bond film 21 (temporary fixing step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, a separately manufactured semiconductor chip, and the like. The shearing adhesive force at 25 ° C. at the time of temporary fixing of the die bond film 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shearing adhesive force of the die bond film 21 is 0.2 MPa or more is such that in the wire bonding step described later, the die bond film 21 is displaced on the adhesive surface between the die bond film 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating. It is possible to suppress the occurrence of deformation and perform wire bonding appropriately. The shearing adhesive force at 175 ° C. at the time of temporary fixing of the die bond film 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51.

Next, as shown in FIG. 7B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via the bonding wire 52 (not shown). Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding accompanied by heating, and the die bond film 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes.

Next, as shown in FIG. 7C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 on the adherend 51 and the bonding wire 52 (sealing step). In the sealing step, the thermosetting of the die bond film 21 proceeds. In the sealing step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the sealing resin 53 is not sufficiently cured in the sealing step, a post-curing step for completely curing the sealing resin 53 is performed after the sealing step. Even if the die bond film 21 is not completely heat-cured in the sealing step, the die bond film 21 can be completely heat-cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

In the above embodiment, as described above, after the semiconductor chip 31 with the die bond film is temporarily fixed to the adherend 51, the wire bonding step is performed without completely thermosetting the die bond film 21. Instead of such a configuration, in the above-mentioned method for manufacturing a semiconductor device, a semiconductor chip 31 with a die-bonded film may be temporarily fixed to an adherend 51, and then the die-bonded film 21 may be thermally cured and then a wire bonding step may be performed. good.

In the method for manufacturing the semiconductor device, as another embodiment, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described above with reference to FIG. 2D. After going through the above-mentioned process with reference to FIG. 2 (c), in the wafer thinning step shown in FIG. 8, the wafer is brought to a predetermined thickness while the semiconductor wafer W is held by the wafer processing tape T2. The semiconductor wafer divider 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed by thinning the wafer by grinding from the second surface Wb. In the wafer thinning step, a method of grinding the wafer until the dividing groove 30a is exposed on the second surface Wb side (first method) may be adopted, or the dividing groove 30a is reached from the second surface Wb side. A method of grinding the wafer to the front and then forming a semiconductor wafer split body 30B by causing a crack between the split groove 30a and the second surface Wb by the action of the pressing force from the rotary grindstone to the wafer (second). Method) may be adopted. Depending on the method adopted, the depth of the dividing groove 30a formed as described above with reference to FIGS. 2 (a) and 2 (b) from the first surface Wa is appropriately determined. In FIG. 8, the dividing groove 30a that has undergone the first method, the dividing groove 30a that has undergone the second method, and the cracks connected thereto are schematically represented by thick lines. In the method for manufacturing a semiconductor device, in step A, the semiconductor wafer divider 30B thus manufactured as the semiconductor wafer divider is used instead of the semiconductor wafer 30A, and each of the above-described semiconductor wafer dividers is referred to with reference to FIGS. 3 to 7. The process may be performed.

9 (a) and 9 (b) represent the step B in the embodiment, that is, the first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film 1. In step B of the embodiment, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film 1 and raised, and the semiconductor wafer divided body 30B is bonded to the dicing die bond film 1. The dicing tape 10 of the dicing die bond film 1 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. The tensile stress in this expansion is set appropriately. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably -15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding step is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding step, the die bond film 20 of the dicing die bond film 1 is cut into small pieces of the die bond film 21 to obtain a semiconductor chip 31 with a die bond film. Specifically, in the cool expanding step, in the die bond film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation occurs in each region where each semiconductor chip 31 of the semiconductor wafer divider 30B is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the drawing without such a deformation suppressing action. As a result, in the die bond film 20, the portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the drawing is cut.

In the method for manufacturing the semiconductor device, as still another embodiment, the semiconductor wafer 30C manufactured as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in the step A.

In the embodiment, as shown in FIGS. 10 (a) and 10 (b), first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have already been built on the side of the first surface Wa of the semiconductor wafer W, and the wiring structure and the like (not shown) required for the semiconductor element have already been formed on the first surface Wa. Has been done. Then, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the light collecting point inside the wafer while the semiconductor wafer W is held by the wafer processing tape T3. The combined laser beam is applied to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned division line, and the semiconductor wafer W is modified by ablation due to multiphoton absorption. The region 30b is formed. The modified region 30b is a fragile region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30b on a planned division line by irradiating a semiconductor wafer with a laser beam is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. It is adjusted appropriately within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) Condensing lens Magnification 100 times or less NA 0.55
Transmittance with respect to laser light wavelength 100% or less (C) Movement speed of the cutting table on which the semiconductor substrate is placed 280 mm / sec or less

Next, as shown in FIG. 10C, with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. A semiconductor wafer 30C that can be fragmented is formed on a plurality of semiconductor chips 31 (wafer thinning step). In the method for manufacturing a semiconductor device, in step A, the semiconductor wafer 30C thus produced as a semiconductor wafer that can be fragmented is used instead of the semiconductor wafer 30A, and is described above with reference to FIGS. 3 to 7. Each step may be performed.

11 (a) and 11 (b) show the step B in the embodiment, that is, the first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film 1. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing die bond film 1 and raised, and the dicing die bond film 1 bonded to the semiconductor wafer 30C is raised. The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. The tensile stress in this expansion is set appropriately. The temperature condition in the cool expanding step is, for example, 0 ° C. or lower, preferably −20 to −5 ° C., more preferably -15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed for raising the push-up member 43) in the cool expanding step is preferably 1 to 400 mm / sec. The amount of expansion in the cool expanding step is preferably 1 to 300 mm. By such a cool expanding step, the die bond film 20 of the dicing die bond film 1 is cut into small pieces of the die bond film 21 to obtain a semiconductor chip 31 with a die bond film. Specifically, in the cool expand step, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, and individualization into the semiconductor chip 31 occurs. At the same time, in the cool expanding step, in the die bond film 20 that is in close contact with the pressure-sensitive adhesive layer 12 of the expanded dicing tape 10, deformation is suppressed in each region of the semiconductor wafer 30C in which each semiconductor chip 31 is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the crack-forming portion of the wafer located in the vertical direction in the drawing without such a deformation suppressing effect. As a result, in the die bond film 20, the portion of the die bond film 20 located in the vertical direction in the figure of the crack forming portion between the semiconductor chips 31 is cut.

Further, in the method for manufacturing a semiconductor device, the dicing die bond film 1 can be used for obtaining a semiconductor chip with a die bond film as described above, but when a plurality of semiconductor chips are laminated and mounted three-dimensionally. It can also be used for obtaining a semiconductor chip with a die-bonded film in. A spacer may or may not be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the die bond film 21.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

Example 1
(Making dicing tape)
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), and benzoyl peroxide 0. 4 parts by mass and 80 parts by mass of toluene were added, and polymerization was carried out at 60 ° C. for 10 hours in a nitrogen stream to obtain a solution containing acrylic polymer A.
To this solution containing the acrylic polymer A, 1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) was added, and an addition reaction was carried out at 50 ° C. for 60 hours in an air stream, and the solution containing the acrylic polymer A'was carried out. Got
Next, with respect to 100 parts by mass of the acrylic polymer A', 1.3 parts by mass of the polyisocyanate compound (trade name "Coronate L", manufactured by Toso Co., Ltd.) and a photopolymerization initiator (trade name "Irgacure 184"). A pressure-sensitive adhesive composition A was prepared by adding 3 parts by mass (manufactured by BASF).
The obtained pressure-sensitive adhesive composition A was applied onto the silicone-treated surface of the PET-based separator and heated at 120 ° C. for 2 minutes to remove the solvent to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. Next, an EVA film (manufactured by Gunze Co., Ltd., thickness 115 μm) as a base material was attached to the exposed surface of the pressure-sensitive adhesive layer A and stored at 23 ° C. for 72 hours to prepare a dicing tape A.

(Making a die bond film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol 50 parts by mass of resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.), 190 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and curing catalyst (trade name """Curesol2PHZ" (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was mixed by adding 0.6 parts by mass to methyl ethyl ketone to obtain an adhesive composition A having a solid content concentration of 20% by mass. Next, a PET-based separator (thickness 50 μm) was applied onto a surface treated with silicone, heated at 130 ° C. for 2 minutes to remove the solvent, and a die bond film A having a thickness of 10 μm was prepared. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (total mass of the components excluding spherical silica) in the die bond film A and the content ratio of silica to the total mass of the die bond film A.

(Preparation of dicing die bond film)
The PET-based separator was peeled off from the dicing tape A, and the die bond film A was attached to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the die bond film were aligned. In addition, a hand roller was used for bonding. As described above, a dicing die bond film having a laminated structure including a dicing tape and a dicing bond film was produced.

Example 2
(Making a die bond film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol 50 parts by mass of resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.), 200 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and curing catalyst (trade name "" 1.0 part by mass of "Curesol 2PHZ" (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition B having a solid content concentration of 20% by mass. Next, a PET-based separator (thickness 50 μm) was applied onto a surface treated with silicone and heated at 130 ° C. for 2 minutes to remove the solvent to prepare a die bond film B having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (total mass of the components excluding spherical silica) in the die bond film B and the content ratio of silica to the total mass of the die bond film B.

(Preparation of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the dicing bond film B was used instead of the dicing bond film A.

Example 3
(Making a die bond film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol 50 parts by mass of resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.), 130 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and curing catalyst (trade name "" 0.4 parts by mass of "Curesol 2PHZ" (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition C having a solid content concentration of 20% by mass. Next, a PET-based separator (thickness 50 μm) was applied onto a surface treated with silicone and heated at 130 ° C. for 2 minutes to remove the solvent to prepare a die bond film C having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (total mass of the components excluding spherical silica) in the die bond film C and the content ratio of silica to the total mass of the die bond film C.

(Preparation of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the dicing bond film C was used instead of the dicing bond film A.

Comparative Example 1
(Making a die bond film)
100 parts by mass of acrylic resin (trade name "SG-708-6", manufactured by Nagase ChemteX Corporation, glass transition temperature 4 ° C), 45 parts by mass of epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) , Phenol formaldehyde (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.) 50 parts by mass, spherical silica (trade name "SO-25R", manufactured by Admatex Co., Ltd.) 100 parts by mass, and curing catalyst (product) 0.6 parts by mass of the name "Curesol 2PHZ" (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition D having a solid content concentration of 20% by mass. Next, a PET-based separator (thickness 50 μm) was applied onto a surface treated with silicone and heated at 130 ° C. for 2 minutes to remove the solvent to prepare a die bond film D having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (total mass of the components excluding spherical silica) in the die bond film D, and the content ratio of silica to the total mass of the die bond film D.

(Preparation of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the dicing bond film D was used instead of the dicing bond film A.

Comparative Example 2
(Making a die bond film)
100 parts by mass of acrylic resin (trade name "SG-70L", manufactured by Nagase ChemteX Corporation, glass transition temperature -13 ° C), 40 parts by mass of epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation), Phenol formaldehyde (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.) 40 parts by mass, spherical silica (trade name "SO-25R", manufactured by Admatex Co., Ltd.) 200 parts by mass, and curing catalyst (trade name) 0.6 parts by mass of "Curesol 2PHZ" (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition E having a solid content concentration of 20% by mass. Next, a PET-based separator (thickness 50 μm) was applied onto a surface treated with silicone, heated at 130 ° C. for 2 minutes to remove the solvent, and a die bond film E having a thickness of 10 μm was prepared. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (total mass of the components excluding spherical silica) in the die bond film E and the content ratio of silica to the total mass of the die bond film E.

(Preparation of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the dicing bond film E was used instead of the dicing bond film A.

Comparative Example 3
(Making a die bond film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol 50 parts by mass of resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.), 100 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and curing catalyst (trade name """Curesol2PHZ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to and mixed with 0.5 parts by mass of methyl ethyl ketone to obtain an adhesive composition F having a solid content concentration of 20% by mass. Next, a PET-based separator (thickness 50 μm) was applied onto a surface treated with silicone, and heated at 130 ° C. for 2 minutes to remove the solvent to prepare a die bond film F having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (total mass of the components excluding spherical silica) in the die bond film F and the content ratio of silica to the total mass of the die bond film F.

(Preparation of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the dicing bond film F was used instead of the dicing bond film A.

Comparative Example 4
(Making a die bond film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol 50 parts by mass of resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.), 250 parts by mass of spherical silica (trade name "SO-25R", manufactured by Admatex Co., Ltd.), and curing catalyst (trade name """Curesol2PHZ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to and mixed with 0.5 parts by mass of methyl ethyl ketone to obtain an adhesive composition G having a solid content concentration of 20% by mass. Next, a PET-based separator (thickness 50 μm) was applied onto a surface treated with silicone and heated at 130 ° C. for 2 minutes to remove the solvent to prepare a die bond film G having a thickness of 10 μm. Table 1 shows the content ratio of the acrylic resin to the total mass of the organic components (total mass of the components excluding spherical silica) in the die bond film G and the content ratio of silica to the total mass of the die bond film G.

(Preparation of dicing die bond film)
A dicing die bond film was produced in the same manner as in Example 1 except that the dicing bond film G was used instead of the dicing bond film A.

<Evaluation>
The die bond film and the dicing die bond film obtained in Examples and Comparative Examples were evaluated as follows. The results are shown in Table 1.

(Store elastic modulus E'at 25 ° C. measured under the condition of frequency 10 Hz and storage elastic modulus E'at -15 ° C. measured under the condition of frequency 10 Hz)
From the die bond films obtained in Examples and Comparative Examples, a strip with a width of 4 mm and a length of 40 mm was cut out with a cutter knife to form a test piece, and a solid viscoelasticity measuring device (measuring device: Rheogel-E4000, manufactured by UBM) was used. ) Was used to measure the dynamic storage elastic modulus in a tensile mode in a temperature range of −50 to 100 ° C. under the conditions of a frequency of 10 Hz, a heating rate of 5 ° C./min, and an initial chuck distance of 22.5 mm. Then, the values at 25 ° C and -15 ° C are read, and these values are the storage elastic modulus at 25 ° C measured under the condition of frequency 10 Hz and the storage elastic modulus at -15 ° C measured under the condition of frequency 10 Hz, respectively. Obtained as rate E'. The evaluation results are shown in the columns of "Store elastic modulus E'(25 ° C., 10 Hz)" and "Stored elastic modulus E'(-15 ° C., 10 Hz)" in Table 1, respectively.

(Store elastic modulus G'at 130 ° C. measured under the condition of frequency 1 Hz, and loss elastic modulus G'at 130 ° C. measured under the condition of frequency 1 Hz)
The die bond films obtained in Examples and Comparative Examples were laminated in 300 μm and punched into a circular shape with a punch of 10 mmΦ to prepare a measurement sample. Using a measuring jig of 8 mmΦ, the storage elastic modulus and the loss elastic modulus were measured in the range of 75 to 150 ° C. under the conditions of a gap of 250 μm, a heating rate of 10 ° C./min, a frequency of 5 rad / sec, and a strain of 10% (measuring device). : HAAKE MARSIII, manufactured by Thermo Scientific). Then, the values of the storage elastic modulus and the loss elastic modulus at 130 ° C. are read, and these values are measured under the conditions of the storage elastic modulus G'at 130 ° C. and the frequency of 1 Hz, respectively. It was obtained as a loss elastic modulus G'' at 130 ° C. The evaluation results are shown in the columns of "storage elastic modulus G'(130 ° C., 1 Hz)" and "loss elastic modulus G" (130 ° C., 1 Hz), respectively, in Table 1.

(Store elastic modulus E'at 150 ° C. measured under the condition of frequency 10 Hz after heat curing, and storage elastic modulus E'at 250 ° C. measured under the condition of frequency 10 Hz after heat curing)
The die-bonded films obtained in Examples and Comparative Examples were heated and cured under a temperature condition of 175 ° C. for 1 hour, and then cut into strips having a width of 4 mm and a length of 40 mm from the heat-cured die-bonded film with a cutter knife. Using a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric Co., Ltd.) as a test piece, the temperature is 0 to 300 ° C. under the conditions of a frequency of 10 Hz, a temperature rise rate of 10 ° C./min, and an initial chuck distance of 22.5 mm. In the range, the dynamic storage elastic modulus was measured in tensile mode. Then, the values at 150 ° C. and 250 ° C. are read, and these values are measured under the conditions of the storage elastic modulus at 150 ° C. measured under the condition of the frequency of 10 Hz after thermosetting and the condition of the frequency of 10 Hz after the thermosetting, respectively. It was obtained as a storage elastic modulus E'at 250 ° C. The evaluation results are shown in the columns of "Store elastic modulus E'(150 ° C., 10 Hz) after curing" and "Store elastic modulus E'(250 ° C., 10 Hz) after curing" in Table 1, respectively.

(Cutability and floating during cool expansion)
Using the product name "ML300-Integration" (manufactured by Tokyo Precision Co., Ltd.) as a laser processing device, the condensing points are aligned inside the 12-inch semiconductor wafer, and along the grid-like (10 mm x 10 mm) division schedule line. A laser beam was irradiated from the surface of the wafer to form a modified region inside the semiconductor wafer. The irradiation of the laser beam was performed under the following conditions.
(A) Laser light
Laser light source Semiconductor laser excitation Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ^-8 cm ²
Oscillation form Q-switched pulse
Repeat frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized light (B) Condensing lens
Magnification 50 times
NA 0.55
Transmittance to laser light wavelength 60%
(C) The moving speed of the cutting table on which the semiconductor substrate is placed is 100 mm / sec.

After forming a modified region inside the semiconductor wafer, a protective tape for back grinding is attached to the surface of the semiconductor wafer, and a back grinder (trade name "DGP8760", manufactured by Disco Co., Ltd.) is used to increase the thickness of the semiconductor wafer. The back surface was ground to a size of 30 μm.

The semiconductor wafer on which the modified region was formed and the dicing ring were bonded to the dicing die bond films obtained in Examples and Comparative Examples. Then, the semiconductor wafer and the die bond film were cut using a die separator (trade name "DDS2300", manufactured by DISCO Corporation). Specifically, first, the semiconductor wafer and the die bond film were cut by performing cool expansion with a cool expander unit under the conditions of a temperature of −15 ° C., an expanding speed of 200 mm / sec, and an expanding amount of 12 mm. Then, in a heat expander unit, room temperature expansion was performed under the conditions of room temperature, an expanding speed of 1 mm / sec, and an expanding amount of 7 mm. Then, while maintaining the expanded state, the dicing tape was heat-shrinked on the outer peripheral portion of the semiconductor chip at a heat temperature of 200 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 5 ° / sec. Then, the above sample was picked up by a die bonder (trade name "Die bonder SPA-300", manufactured by Shinkawa Co., Ltd.) with a pickup height of 5,500 μm and 50 chips were evaluated, and the percentage of pickups was 90% or more. The case was evaluated as ◯, and the case of less than 90% was evaluated as ×. The evaluation results are shown in the "Cutability" column of Table 1.

In addition, the area of the part where the die-bond film is floating from the dicing tape in the expanded state (the ratio of the area of the floating semiconductor chip with the die-bond film when the total area of the die-bond film is 100%) is measured with a microscope. After observing, the case where the floating area was less than 30% was evaluated as ◯, and the case where the floating area was 30% or more was evaluated as ×. The evaluation results are shown in the column of "Float during cool expansion" in Table 1.

(Floating at room temperature expansion)
After the above evaluation of the float during cool expansion, a die separator (trade name "DDS2300", manufactured by DISCO Corporation) is used, and the heat expander unit is used at room temperature under the conditions of room temperature, expansion speed of 1 mm / sec, and expansion amount of 7 mm. Expanded. Then, while maintaining the expanded state, the dicing tape was heat-shrinked on the outer peripheral portion of the semiconductor chip at a heat temperature of 200 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 5 ° / sec. Then, the area of the portion where the die bond film is floating from the dicing tape in that state (the ratio of the area of the floating semiconductor chip with the die bond film when the total area of the die bond film is 100%) is observed with a microscope. The case where the floating area was less than 30% was evaluated as ◯, and the case where the floating area was 30% or more was evaluated as x. The evaluation results are shown in the column of "Float at room temperature expansion" in Table 1.

(Floating over time after room temperature expansion)
In the evaluation at the time of normal temperature expansion, after 3 hours have passed after the dicing tape was heat-shrinked, the area of the part where the dicing film is floating from the dicing tape (with the floating die bond film when the total area of the dicing film is 100%). The ratio of the area of the semiconductor chip) was observed with a microscope, and the case where the floating area was less than 30% was evaluated as ◯, and the case where the floating area was 30% or more was evaluated as ×. The evaluation results are shown in the column of "Float over time" in Table 1.

(Pickup suitability)
After the above evaluation of the float during normal temperature expansion, using the brand name "Die Bonder SPA-300" (manufactured by Shinkawa Co., Ltd.), the push-up speed is 1 mm / sec, the push-up amount is 500 μm, the number of pins is 5, and 50 pieces are used. I tried to pick up a semiconductor chip with a die bond film. Then, the case where all 50 pieces could be picked up was evaluated as ◯, and the case where even one piece could not be picked up or the case where the float had already occurred was evaluated as x. The evaluation results are shown in the "Pickup suitability" column of Table 1.

(Die bond suitability)
Using "Die Bonder SPA-300" (manufactured by Shinkawa Co., Ltd.), bond to a mirror chip of 15 mm x 15 mm under the conditions of stage temperature 120 ° C., die bond load 1000 gf, and die bond time 1 second, and the four corners of the chip float. confirmed. The observation was performed using an ultrasonic imaging device (trade name "FS200II", manufactured by Hitachi Metals, Ltd.). The area occupied by the float in the observation image was calculated using binarization software (WinLoof ver. 5.6). When the area occupied by the void was less than 5% with respect to the surface area of the adhesive sheet, it was judged as "◯", and when it was 5% or more, it was judged as "x". The evaluation results are shown in the column of "Diebond suitability" in Table 1.

(Aptitude for wire bonding)
A wafer having aluminum vapor deposition on one side was ground to obtain a dicing wafer having a thickness of 30 μm. The dicing wafer was attached to the dicing die bond films obtained in Examples and Comparative Examples, and then diced into a 10 mm square to obtain a chip with a dicing film. A chip with a die-bonded film was die-attached onto a Cu lead frame under the conditions of 120 ° C., 0.1 MPa, and 1 sec. Using a wire bonding apparatus (Maxum Plus manufactured by K & S), five Au wires having a wire diameter of 18 μm were bonded to one chip. Au wire was struck on the Cu lead frame under the conditions of an output of 80 Amp, a time of 10 ms, and a load of 50 g. Au wire was struck on the tip under the conditions of 150 ° C., output 125 Amp, time 10 ms and load 80 g. When one or more of the five Au wires could not be joined to the chip, it was judged as x, and when five of the five Au wires could be joined to the chip, it was judged as ◯. The evaluation results are shown in the column of "wire bonding suitability" in Table 1.

(Reflow suitability)
The die-bonded films obtained in Examples and Comparative Examples were attached to a semiconductor element having a thickness of 9.5 mm × 9.5 mm and 200 μm at 70 ° C., and mounted on a lead frame at 120 ° C., 0.1 MPa for 1 second. , A heat treatment was performed at 175 ° C. × 1 hour (pressurization 7 kg / cm ² ) in a pressure dryer, and then a molding step using a sealing resin was performed. After that, the sample was passed through an IR reflow oven whose temperature was set to hold this temperature for 30 seconds at 260 ° C or higher after absorbing moisture at 85 ° C / 60% RH x 168h, and then an ultrasonic imaging device (Hitachi Metals, Ltd.). With FS200II) manufactured by Finetech, it was observed for 9 chips whether or not peeling occurred at the interface between the chip and the substrate, and the probability of peeling was calculated. Nine pieces were evaluated, and the case where there was no peeling was evaluated as ◯, and the case where even one peeling was confirmed was evaluated as x. The evaluation results are shown in the "Reflow suitability" column of Table 1.

1 Dicing die bond film 10 Dicing tape 11 Base material 12 Adhesive layer 20, 21 Die bond film W, 30A Semiconductor wafer 30B Semiconductor wafer divider 30a Split groove 30b Modification region 31 Semiconductor chip

Claims (5)

A dicing tape having a base material and an adhesive layer laminated on the base material, and a dicing tape.
The dicing tape has a die bond film laminated on the pressure-sensitive adhesive layer, and has.
A dicing die bond film having a storage elastic modulus E'at 3 to 5 GPa at 25 ° C. measured under the condition of a frequency of 10 Hz. The dicing die bond film according to claim 1, wherein the dicing die bond film has a storage elastic modulus E'at 4 to 7 GPa at −15 ° C. measured under the condition of a frequency of 10 Hz. After the dicing film is thermally cured, the storage elastic modulus E'at 150 ° C. measured under the condition of a frequency of 10 Hz is 20 to 200 MPa, and the storage elastic modulus E at 250 ° C. measured under the condition of a frequency of 10 Hz. The dicing die bond film according to claim 1 or 2, which exhibits '20 to 200 MPa. The dicing die bond film according to any one of claims 1 to 3, wherein the dicing die bond film has a storage elastic modulus G'at 0.03 to 0.7 MPa at 130 ° C. measured under the condition of a frequency of 1 Hz. The dicing die bond film according to any one of claims 1 to 4, wherein the dicing die bond film has a loss elastic modulus G'' measured at a frequency of 1 Hz at 130 ° C. of 0.01 to 0.1 MPa.

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