JP7208327B2 - Dicing die bond film - Google Patents

Description

The present invention relates to a dicing die-bonding film. More particularly, the present invention relates to a dicing die bond film that can be used in the manufacturing process of semiconductor devices.

2. Description of the Related Art Conventionally, a dicing tape or a dicing die-bonding film may be used in the manufacture of semiconductor devices. The dicing tape has a form in which an adhesive layer is provided on a base material, and a semiconductor wafer is placed on the adhesive layer so that the separated semiconductor chips do not scatter when the semiconductor wafer is diced (cut). It is used for fixing to (for example, see Patent Document 1).

The dicing die-bonding film is a die-bonding film provided on the adhesive layer of the dicing tape so as to be peelable. In manufacturing a semiconductor device, a semiconductor wafer is held on a die bond film of a dicing die bond film, and the semiconductor wafer is diced into individual semiconductor chips. Thereafter, for example, through a cleaning process, the semiconductor chip is picked up from the dicing tape together with the die-bonding film and peeled off, and the semiconductor chip is temporarily fixed (die-bonded) to an adherend such as a lead frame via the die-bonding film. Therefore, it is important that the die-bonding film in the dicing die-bonding film has excellent releasability from the dicing tape (pickup suitability) at the time of picking up, and excellent adhesion to the adherend (die-bonding suitability) at the time of die bonding.

When a dicing die-bonding film in which a die-bonding film is laminated on a dicing tape is used and a semiconductor wafer is diced while being held by the die-bonding film, the die-bonding film must be cut simultaneously with the semiconductor wafer. However, in a general dicing method using a diamond blade, adhesion between the die bond film and the dicing tape due to the influence of heat generated during dicing, adhesion of semiconductor chips due to the generation of cutting chips, and cutting chips on the sides of the semiconductor chips. Since there is concern about the adhesion of , etc., it is necessary to slow down the cutting speed, leading to an increase in cost.

Therefore, in recent years, a method of obtaining individual semiconductor chips by forming grooves on the surface of a semiconductor wafer and then grinding the back surface (sometimes referred to as "DBG (Dicing Before Grinding)") (for example, Patent Document 2). ), or by irradiating the planned division lines in the semiconductor wafer with a laser beam to form a modified region, so that the semiconductor wafer can be easily divided along the planned division lines, and then the semiconductor wafer is diced into a die-bonding film. After bonding, the dicing tape is expanded at a low temperature (for example, −25 to 0° C.) (hereinafter sometimes referred to as “cool expansion”) to split (break) both the semiconductor wafer and the die bond film. A method for obtaining individual semiconductor chips (semiconductor chips with a die-bonding film) has been proposed (see Patent Document 3, for example). This is a method called stealth dicing (registered trademark). Also in DBG, the obtained individual semiconductor chips are attached to a dicing die-bonding film, and then the dicing tape is cool-expanded to cut the die-bonding film into sizes corresponding to the individual semiconductor chips, thereby forming individual die-bonding films. Methods for obtaining film-coated semiconductor chips are also known. Thus, when the die-bonding film is cut by cool expansion, it is important that the die-bonding film in the dicing die-bonding film is excellent in cutting property during cool-expanding.

JP 2011-216563 A JP-A-2003-007649 JP 2009-164556 A

In DBG, stealth dicing, etc., after the die-bonding film is cut, the dicing die-bonding film is expanded at around room temperature (hereinafter sometimes referred to as "normal temperature expansion") to reduce the distance between adjacent individual semiconductor chips with die-bonding films. After that, the outer peripheral portion of the semiconductor chip is thermally shrunk (hereinafter sometimes referred to as "heat shrink") and fixed while the gap between the semiconductor chips is widened, thereby obtaining individual semiconductors with die bond films Chip pickup can be easily performed.

2. Description of the Related Art In recent years, due to the need for higher capacity semiconductors, circuit layers have been multi-layered and silicon layers have been made thinner. However, as the thickness (total thickness) of the circuit layers increases due to the multi-layering of the circuit layers, the ratio of the resin contained in the circuit layers tends to increase. The difference in coefficient of linear expansion from the layered silicon layer becomes significant, and the semiconductor chip tends to warp. For this reason, in particular, a semiconductor chip in which circuit layers with a die-bonding film are multilayered, obtained after dicing, is at the interface between the adhesive layer of the dicing tape and the die-bonding film during and after room temperature expansion (for example, until it is picked up. (e.g. between ), floating (peeling) was likely to occur.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a die-bonding film having excellent pick-up aptitude and die-bonding aptitude, while preventing lifting between the die-bonding film and the pressure-sensitive adhesive layer during and after normal temperature expansion. To provide a dicing die-bonding film which hardly occurs.

As a result of intensive studies to achieve the above object, the present inventors found that using a dicing tape in which the storage elastic modulus E′ of the die-bonding film at 25° C. is within a specific range, a semiconductor chip having a multi-layered circuit layer Even in the case of using, it was found that the pick-up aptitude of the die-bonding film and the die-bonding aptitude are excellent, but the floating is less likely to occur during and after room temperature expansion. The present invention has been completed based on these findings.

That is, the present invention includes a dicing tape having a base material and an adhesive layer laminated on the base material, and a die bond film laminated on the adhesive layer in the dicing tape, Provided is a dicing die-bonding film having a storage elastic modulus E′ of 3 to 5 GPa at 25° C. measured at a frequency of 10 Hz.

In the dicing die-bonding film of the present invention, the storage elastic modulus E′ of the die-bonding film at 25° C. measured at a frequency of 10 Hz is 3 GPa or more, which is relatively higher than that of the conventional die-bonding film. When stress is applied in a relatively slow speed range at room temperature, the die bond film becomes difficult to move in the vertical direction (thickness direction), and not only semiconductor chips that are not multi-layered, but also semiconductors with multi-layered circuit layers. Even when chips are used, it is possible to prevent the die-bonding film from floating from the dicing tape during and after normal temperature expansion (for example, during the washing process and before picking up). Nevertheless, when the individualized die-bonding film is intentionally picked up from the dicing tape and peeled off, the stress is applied in a relatively high speed range, so that it can be easily picked up. In addition, by controlling the storage elastic modulus E′ of the die bond film at 25° C. measured at a frequency of 10 Hz to 5 GPa or less, the wettability of the die bond film to the adherend during die bonding is excellent, making it suitable for die bonding. It is excellent and can be performed satisfactorily when die-bonding (temporarily fixing) a semiconductor chip to an adherend. Thus, when using the dicing die-bonding film of the present invention, the storage elastic modulus E′ at 25° C. measured at a frequency of 10 Hz is 3 GPa or more, so when stress is applied in a relatively slow speed region It is possible to satisfy both the characteristic of not causing floating and the characteristic of being easy to pick up with a pick-up that is stressed in a relatively high speed region.

In the dicing die-bonding film of the present invention, the storage elastic modulus E′ of the die-bonding film at −15° C. measured at a frequency of 10 Hz is preferably 4 to 7 GPa. By setting the storage elastic modulus E′ of the die-bonding film at −15° C. measured at a frequency of 10 Hz to within the range of 4 to 7 GPa, which is relatively higher than the same storage elastic modulus of the conventional die-bonding film, When stress is applied to the die bond film, it becomes difficult to move in the vertical direction (thickness direction). It is possible to make it difficult for the die-bonding film to rise from the dicing tape during and after the expansion (for example, until the temperature returns to room temperature). Also, the die-bonding film can be easily cut by cool expansion. Therefore, when the dicing die-bonding film having this configuration is used, even when a semiconductor chip having a multi-layered circuit layer is used, the die-bonding film is excellent in cutability, pick-up suitability, and die-bonding suitability during cool expansion. , at the time of cool expansion, at the time of normal temperature expansion, and after that, floating is less likely to occur.

In addition, the die bond film in the dicing die bond film of the present invention exhibits a storage elastic modulus E′ of 20 to 200 MPa at 150 ° C. measured at a frequency of 10 Hz after heat curing, and measured at a frequency of 10 Hz. It preferably exhibits a storage modulus E′ of 20 to 200 MPa at 250°C. When the semiconductor chip is die-bonded to the adherend through the die-bonding film, and then the wire-bonding step described later is performed, the die-bonding film is heated to about 150 ° C. by the heat generated by the heating during wire-bonding in the wire-bonding step. However, after the die-bonding film is heat-cured, the die-bonding film after heat-curing exhibits a storage elastic modulus E′ of 20 to 200 MPa at 150° C. measured at a frequency of 10 Hz. Even when the temperature is raised to about 150° C. in the wire bonding process, the semiconductor chip is difficult to move due to the impact of wire bonding, the force is easily transmitted to the wire bonding pad, and the wire can be properly bonded. In addition, as a reliability evaluation of semiconductor-related parts, a humidity resistance solder reflow test is generally performed by heating the semiconductor-related parts to about 250 ° C. After the die bond film is heat cured, it is measured at a frequency of 10 Hz. By exhibiting a storage elastic modulus E' of 20 to 200 MPa at °C, it is possible to make the die-bonding film less likely to peel off from the adherend even when heated to about 250 °C in the humidity-resistant solder reflow test. That is, when the two storage elastic moduli E′ of the die-bonding film after thermosetting are within the above ranges, the adhesion stability after the semiconductor chip is fixed is excellent.

In the dicing die-bonding film of the present invention, the storage elastic modulus G' of the die-bonding film at 130° C. measured at a frequency of 1 Hz is preferably 0.03 to 0.7 MPa. As a result, it is possible to make it more difficult for the chip to float during die bonding. In addition, since it becomes easy to control the storage elastic modulus E′ at 25° C. within the above range, during cool expansion, normal temperature expansion, and after that, while making it difficult for floating to occur, the die-bonding suitability for the adherend is more improved. There is a tendency that the die bonding of the semiconductor chip to the adherend can be performed satisfactorily.

Further, in the dicing die-bonding film of the present invention, it is preferable that the loss elastic modulus G'' of the die-bonding film at 130° C. measured at a frequency of 1 Hz is 0.01 to 0.1 MPa. As a result, it is possible to make it more difficult for the chip to float during die bonding.

The dicing die-bonding film of the present invention is excellent in die-bonding film pick-up aptitude and die-bonding aptitude, and during and after normal temperature expansion, the die-bonding film and the pressure-sensitive adhesive layer are less likely to separate from each other. In particular, even when a semiconductor chip having multiple circuit layers is used, the floating is less likely to occur.

BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram which shows one Embodiment of the dicing die-bonding film of this invention. 1 shows some steps in a method of manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 1 shows some steps in a method of manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 1 shows some steps in a method of manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 1 shows some steps in a method of manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 1 shows some steps in a method of manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 1 shows some steps in a method of manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention. 4 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film of the present invention.

[Dicing die bond film]
The dicing die bond film of the present invention includes a dicing tape having a substrate and an adhesive layer laminated on the substrate, and a die bond film laminated on the adhesive layer of the dicing tape. One embodiment of the dicing die-bonding film of the present invention is described below. FIG. 1 is a schematic cross-sectional view showing one embodiment of the dicing die-bonding film of the present invention.

As shown in FIG. 1, the dicing die-bonding film 1 includes a dicing tape 10 and a die-bonding film 20 laminated on the adhesive layer 12 of the dicing tape 10 to obtain a semiconductor chip with a die-bonding film in manufacturing a semiconductor device. It can be used for the expanding step in the process. The dicing die-bonding film 1 has, for example, a disk shape of a size corresponding to a semiconductor wafer to be processed in the manufacturing process of a semiconductor device. The dicing tape 10 in the dicing die-bonding film 1 has a laminate structure including a substrate 11 and an adhesive layer 12 .

(Base material)
The base material 11 in the dicing tape 10 is an element that functions as a support in the dicing tape 10 and the dicing die-bonding film 1 . Examples of the substrate 11 include plastic substrates (particularly plastic films). The substrate 11 may be a single layer, or may be a laminate of substrates of the same type or different types.

Examples of the resin constituting the plastic base material include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, and homopolypropylene. , polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resins such as butene copolymers and ethylene-hexene copolymers; polyurethanes; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT); polycarbonates; polyimides; polyamide such as aramid and wholly aromatic polyamide; polyphenyl sulfide; fluorine resin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; Only one kind of the resin may be used, or two or more kinds thereof may be used. When the pressure-sensitive adhesive layer 12 is radiation-curable as described later, the substrate 11 preferably has radiation transparency.

When the substrate 11 is a plastic film, the plastic film may be non-oriented, or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is heat shrinkable in at least one direction. When the dicing tape 1 has heat shrinkability, the peripheral portion of the semiconductor wafer can be heat-shrinked, thereby fixing the separated semiconductor chips with the die-bonding film while widening the interval between them. Therefore, the semiconductor chip can be easily picked up. In order for the base material 11 and the dicing tape 1 to have isotropic heat shrinkability, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching an unstretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The substrate 11 and the dicing tape 1 preferably have a thermal shrinkage rate of 1 to 30%, more preferably 2 to 25% in a heat treatment test performed at a heating temperature of 100° C. and a heating time of 60 seconds. , more preferably 3 to 20%, particularly preferably 5 to 20%. It is preferable that the above-mentioned thermal shrinkage rate is the thermal shrinkage rate in at least one of the MD direction and the TD direction.

The surface of the base material 11 on the adhesive layer 12 side is subjected to, for example, corona discharge treatment, plasma treatment, sand mat treatment, ozone exposure treatment, and flame exposure treatment for the purpose of enhancing adhesion, retention, etc. with the adhesive layer 12. , high-voltage shock exposure treatment, ionizing radiation treatment, etc.; chemical treatment, such as chromic acid treatment; surface treatment, such as easy adhesion treatment with a coating agent (undercoating agent). Moreover, in order to impart antistatic properties, a conductive deposition layer containing a metal, an alloy, an oxide thereof, or the like may be provided on the surface of the substrate 11 .

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably 50 μm or more, from the viewpoint of securing strength for the base material 11 to function as a support in the dicing tape 10 and the dicing die-bonding film 1. is at least 55 μm, particularly preferably at least 60 μm. In addition, from the viewpoint of achieving appropriate flexibility in the dicing tape 10 and the dicing die-bonding film 1, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less. .

(Adhesive layer)
The adhesive layer 12 is formed from an adhesive. The adhesive that forms the adhesive layer 12 may be an adhesive that can intentionally reduce the adhesive force by an external action such as radiation irradiation or heating (adhesive force reducing adhesive). , an adhesive whose adhesive force is hardly or not reduced by an external action (adhesive force non-reducing type adhesive), and the individual pieces of the semiconductor wafer that are singulated using the dicing die-bonding film 1 It can be appropriately selected according to the method, conditions, etc. of the conversion.

When an adhesive force-reducing adhesive is used as the adhesive, the adhesive layer 12 exhibits a relatively high adhesive force and a relatively low adhesive force during the manufacturing process and use process of the dicing die-bonding film 1. and can be used properly. For example, when the die-bonding film 20 is attached to the adhesive layer 12 of the dicing tape 10 in the manufacturing process of the dicing die-bonding film 1, or when the dicing die-bonding film 1 is used in the dicing process, the adhesive layer 12 is relatively high. While it is possible to suppress or prevent the adherend such as the die bond film 20 from floating from the adhesive layer 12 by utilizing the state of exhibiting adhesive strength, after that, the dicing tape 10 of the dicing die bond film 1 is separated from the die bond film. In the pick-up process for picking up the attached semiconductor chip, the pick-up can be easily performed by reducing the adhesive force of the adhesive layer 12 .

Examples of such adhesive force-reducing pressure-sensitive adhesives include radiation-curable pressure-sensitive adhesives (radiation-curable pressure-sensitive adhesives), heat-foaming pressure-sensitive adhesives, and the like. As the adhesive that forms the adhesive layer 12, one type of adhesive force reducing adhesive may be used, or two or more kinds of adhesive force reducing adhesive may be used. Further, the adhesive layer 12 may be entirely formed from the adhesive force reducing adhesive, or may be partially formed from the adhesive force reducing adhesive. For example, when the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed from an adhesive force-reducing adhesive, or a predetermined portion of the adhesive layer 12 (for example, a semiconductor wafer). The central area that is the target area for attachment) is formed from an adhesive with reduced adhesive strength, and other parts (for example, the area that is the target area for attachment of the wafer ring and is located outside the central area) do not reduce the adhesive strength. It may be formed from a mold adhesive.

As the radiation-curable adhesive, for example, an adhesive that is cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays can be used. A pressure-sensitive adhesive (ultraviolet-curable pressure-sensitive adhesive) can be particularly preferably used.

Examples of the radiation-curable pressure-sensitive adhesive include an additive containing a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. type radiation-curable pressure-sensitive adhesives.

The acrylic polymer is a polymer containing structural units derived from an acrylic monomer (a monomer component having a (meth)acryloyl group in the molecule) as a structural unit of the polymer. The above acrylic polymer is preferably a polymer containing the largest proportion of constituent units derived from (meth)acrylic acid ester in terms of mass ratio. In addition, acrylic polymer may use only 1 type, and may use 2 or more types. In the present specification, "(meth)acrylic" means "acrylic" and/or "methacrylic" (one or both of "acrylic" and "methacrylic"), and others are the same. .

Examples of the (meth)acrylic acid ester include hydrocarbon group-containing (meth)acrylic acid esters such as (meth)acrylic acid alkyl esters, (meth)acrylic acid cycloalkyl esters, and (meth)acrylic acid aryl esters. be done. Examples of the (meth)acrylic acid alkyl esters include (meth)acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , octadecyl ester, eicosyl ester and the like. Examples of the (meth)acrylic acid cycloalkyl esters include cyclopentyl esters and cyclohexyl esters of (meth)acrylic acid. Examples of the (meth)acrylic acid aryl esters include phenyl esters and benzyl esters of (meth)acrylic acid. The (meth)acrylic acid ester may be used alone or in combination of two or more. In order for the adhesive layer 12 to appropriately exhibit basic properties such as adhesiveness due to the (meth)acrylic acid ester, the proportion of the (meth)acrylic acid ester in all the monomer components for forming the acrylic polymer is 40%. It is preferably at least 60% by mass, more preferably at least 60% by mass.

The acrylic polymer may contain structural units derived from other monomer components copolymerizable with the (meth)acrylic acid ester for the purpose of improving cohesive strength, heat resistance, and the like. Examples of other monomer components include carboxy group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, and the like. Examples include functional group-containing monomers. Examples of the carboxy group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate and the like. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate, (meth) ) acryloyloxynaphthalenesulfonic acid and the like. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate and the like. Only one kind of the other monomer component may be used, or two or more kinds thereof may be used. In order for the adhesive layer 12 to appropriately exhibit the basic properties such as adhesiveness of the (meth)acrylic acid ester, the ratio of the other monomer components in all the monomer components for forming the acrylic polymer is 60 mass. % or less, more preferably 40 mass % or less.

In order to form a crosslinked structure in the polymer skeleton, the acrylic polymer is a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming the acrylic polymer, such as (meth)acrylic acid ester. may contain Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, penta Erythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate (e.g. polyglycidyl (meth)acrylate), polyester Examples thereof include monomers having a (meth)acryloyl group and other reactive functional groups in the molecule such as (meth)acrylate and urethane (meth)acrylate. Only one kind of the polyfunctional monomer may be used, or two or more kinds thereof may be used. In order for the adhesive layer 12 to appropriately exhibit the basic properties such as the adhesiveness of the (meth)acrylic acid ester, the proportion of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is 40 mass. % or less, more preferably 30 mass % or less.

The above acrylic polymer is obtained by subjecting one or more monomer components including an acrylic monomer to polymerization. Polymerization methods include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.

The acrylic polymer in the adhesive layer 12 preferably has a number average molecular weight of 100,000 or more, more preferably 200,000 to 3,000,000. When the number average molecular weight is 100,000 or more, the amount of low-molecular-weight substances in the pressure-sensitive adhesive layer tends to be small, and contamination of die-bonding films, semiconductor wafers, and the like can be further suppressed.

The radiation-curable pressure-sensitive adhesive may contain a cross-linking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked to further reduce low molecular weight substances in the pressure-sensitive adhesive layer 12 . Examples of the cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (such as polyphenol compounds), aziridine compounds, and melamine compounds. When a cross-linking agent is used, the amount used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta ( meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight of about 100 to 30,000 are preferred. The content of the radiation-curable monomer component and oligomer component in the radiation-curable adhesive that forms the adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 500 parts by mass, with respect to 100 parts by mass of the base polymer. It is about 150 parts by mass. Further, as the additive-type radiation-curable pressure-sensitive adhesive, for example, one disclosed in JP-A-60-196956 may be used.

As the radiation-curable pressure-sensitive adhesive, an internal radiation-curable adhesive containing a base polymer having a radiation-polymerizable carbon-carbon double bond or other functional group in the polymer side chain, in the polymer main chain, or at the polymer main chain end. Also included are mold adhesives. The use of such an internal radiation-curable adhesive tends to suppress unintended changes in adhesive properties over time due to migration of low-molecular-weight components within the formed adhesive layer 12. .

As the base polymer contained in the internal radiation-curable adhesive, an acrylic polymer is preferable. As the acrylic polymer that can be contained in the internal radiation-curable pressure-sensitive adhesive, the acrylic polymer described as the acrylic polymer contained in the additive-type radiation-curable pressure-sensitive adhesive can be employed. As a method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group is polymerized (copolymerized) to obtain an acrylic polymer. After that, a compound having a second functional group capable of reacting with the first functional group and a radiation polymerizable carbon-carbon double bond is added to an acrylic polymer while maintaining the radiation polymerizability of the carbon-carbon double bond. Condensation reaction or addition reaction method can be used.

Combinations of the first functional group and the second functional group include, for example, a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group, a hydroxy group, and the like can be mentioned. Among these, a combination of a hydroxy group and an isocyanate group, and a combination of an isocyanate group and a hydroxy group are preferred from the viewpoint of ease of reaction tracking. Among them, it is technically difficult to produce a polymer having a highly reactive isocyanate group, and on the other hand, from the viewpoint of ease of production and availability of an acrylic polymer having a hydroxy group, the first functional group is A preferred combination is a hydroxy group and the second functional group is an isocyanate group. Examples of compounds having an isocyanate group and a radiation-polymerizable carbon-carbon double bond in this case include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, and the like. . Further, as the acrylic polymer having a hydroxy group, those containing structural units derived from the above-mentioned hydroxy group-containing monomers and ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether. are mentioned.

The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketone, acylphosphinate, acylphosphonate and the like. Examples of the α-ketol compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxy propiophenone, 1-hydroxycyclohexylphenyl ketone, and the like. Examples of the acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2 -Morpholinopropane-1 and the like. Examples of the benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compounds include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compounds include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone-based compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropyl. thioxanthone and the like. The content of the photopolymerization initiator in the radiation-curable adhesive is, for example, 0.05 to 20 parts by weight with respect to 100 parts by weight of the base polymer.

The heat-expandable pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands when heated. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include alkane hydrochlorides such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; and paratoluene. Hydrazine compounds such as sulfonyl hydrazide, diphenylsulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis(benzenesulfonylhydrazide), allylbis(sulfonylhydrazide); p-toluylenesulfonyl semicarbazide, 4,4'- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl- Examples include N-nitroso compounds such as N,N'-dinitrosoterephthalamide. Examples of the heat-expandable microspheres include microspheres having a structure in which a substance that is easily gasified and expanded by heating is encapsulated in the shell. Isobutane, propane, pentane, and the like are examples of substances that easily gasify and expand when heated. Thermally expandable microspheres can be produced by encapsulating a substance that is easily gasified and expanded by heating in a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal melting properties and a substance capable of bursting due to the action of thermal expansion of the enclosed substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, and the like.

Examples of the non-adhesion-reducing pressure-sensitive adhesive include pressure-sensitive pressure-sensitive adhesives and radiation-curable pressure-sensitive adhesives obtained by pre-curing the radiation-curable pressure-sensitive adhesives described above with respect to the pressure-reducing pressure-sensitive adhesives. As the adhesive that forms the adhesive layer 12, one type of non-reducing adhesive strength adhesive may be used, or two or more types of non-reducing adhesive strength adhesive may be used. Further, the entire adhesive layer 12 may be formed from the non-adhesive force-reducing adhesive, or a part thereof may be formed from the non-adhesive force-reducing adhesive. For example, when the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed of a non-adhesive force-reducing adhesive, or a predetermined portion of the adhesive layer 12 (for example, wafering A region outside the central region) is formed from a non-adhesion-reducing adhesive, and other portions (for example, the central region, which is the region to be adhered to the semiconductor wafer) have adhesive strength. It may be formed from a reduced adhesive. Further, when the adhesive layer 12 has a laminated structure, all the adhesive layers in the laminated structure may be formed from a non-adhesive force-reducing adhesive, or some adhesive layers in the laminated structure may have adhesive force. It may be formed from a non-reducing adhesive.

A radiation-curing pressure-sensitive adhesive that has been pre-cured by irradiation (irradiated radiation-curing pressure-sensitive adhesive), even if its adhesive strength is reduced by irradiation, the adhesion caused by the polymer component it contains. It is possible for the adhesive layer of the dicing tape to exhibit the minimum required adhesive strength in the dicing process or the like. When the irradiated radiation-curable adhesive is used, the entire adhesive layer 12 may be formed from the irradiated radiation-curable adhesive in the direction in which the adhesive layer 12 spreads. A portion may be formed from an irradiated radiation-curable pressure-sensitive adhesive and the other portion may be formed from an unirradiated radiation-curable pressure-sensitive adhesive.

As the pressure-sensitive adhesive, a known or commonly used pressure-sensitive adhesive can be used, and an acrylic adhesive or a rubber-based adhesive having an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as the pressure-sensitive adhesive, the acrylic polymer is preferably a polymer containing a constituent unit derived from (meth)acrylic acid ester as the constituent unit having the largest mass ratio. preferable. As the acrylic polymer, for example, the acrylic polymer described above as the acrylic polymer contained in the additive-type radiation-curable pressure-sensitive adhesive can be employed.

The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 includes, in addition to the components described above, known or commonly used adhesives such as cross-linking accelerators, tackifiers, anti-aging agents, and colorants (pigments, dyes, etc.). Additives used in the agent layer may be blended. Examples of the coloring agent include compounds that are colored by exposure to radiation. When a compound that is colored by irradiation is contained, only the irradiated portion can be colored. The compound that is colored by exposure to radiation is a compound that is colorless or light-colored before exposure to radiation and becomes colored by exposure to radiation, and examples thereof include leuco dyes. The amount of the compound that is colored by exposure to radiation is not particularly limited and can be appropriately selected.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but when the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, the viewpoint of balancing the adhesive force to the die bond film 20 before and after radiation curing of the pressure-sensitive adhesive layer 12. Therefore, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, still more preferably 5 to 25 μm.

(die bond film)
The die-bonding film 20 has a structure capable of functioning as a thermosetting adhesive for die-bonding. The die-bonding film 20 can be split by applying a tensile stress, and is used by being split by applying a tensile stress.

As described above, the die-bonding film 20 has a storage elastic modulus E′ of 3 to 5 GPa, preferably 3.2 to 4.8 GPa at 25° C. measured at a frequency of 10 Hz. By setting the storage elastic modulus E′ to 3 GPa or more, when stress is applied in a relatively slow speed region at room temperature, the die-bonding film becomes difficult to move in the vertical direction (thickness direction), and the film is not multi-layered. In addition to semiconductor chips, even when using a semiconductor chip with multiple circuit layers, during and after room temperature expansion (for example, during the cleaning process, until picking up, etc.), the dicing tape of the die bond film It is possible to make it difficult for the float to occur. In spite of this, when the individualized die-bonding film is intentionally picked up from the dicing tape and peeled off, stress is applied in a relatively high speed range, so that it can be easily picked up. Furthermore, by setting the storage elastic modulus E′ to 5 GPa or less, the die bonding film has excellent wettability with respect to the adherend in die bonding, so that die bonding suitability is excellent, and the semiconductor chip is die bonded (temporarily fixed) to the adherend. It can be done well in some cases.

The die-bonding film 20 preferably has a storage elastic modulus E′ of 4 to 7 GPa at −15° C. measured at a frequency of 10 Hz, more preferably 4.5 to 6.5 GPa. When the storage elastic modulus E′ is within the above range, the die-bonding film becomes difficult to move in the vertical direction (thickness direction) when stress is applied at low temperature, and the circuit layer as well as the non-multilayered semiconductor chip. Even when a multi-layered semiconductor chip is used, it is possible to prevent the die-bonding film from floating from the dicing tape during and after cool expansion (for example, until the temperature is returned to room temperature). Also, the die-bonding film can be easily cut by cool expansion.

The die-bonding film 20 preferably has a storage elastic modulus G' of 0.03 to 0.7 MPa at 130° C. measured at a frequency of 1 Hz, more preferably 0.1 to 0.6 MPa. This makes it easy to control the storage elastic modulus E′ at 25 ° C. within the above range, so that during normal temperature expansion, after that, and further during cool expansion, it is difficult to float, and die bonding to the adherend Adaptability also tends to improve.

The die-bonding film 20 preferably has a loss elastic modulus G″ at 130° C. measured at a frequency of 1 Hz of 0.01 to 0.1 MPa, more preferably 0.02 to 0.08 MPa. As a result, it is possible to make it more difficult for the chip to float during die bonding.

After heat curing, the die-bonding film 20 preferably exhibits a storage elastic modulus E′ of 20 to 200 MPa at 150° C. measured at a frequency of 10 Hz, more preferably 22 to 150 MPa. When the semiconductor chip is die-bonded to an adherend in the form of a semiconductor chip with a die-bonding film, and then the wire-bonding step described later is performed, the die-bonding film is heated to 150 ° C. by the heat generated by the heating during wire-bonding in the wire-bonding step. However, since the die-bonding film 20 exhibits a storage elastic modulus E′ within the above range at 150° C. after being heat-cured, the die-bonding film after heat-curing is moderately hard, and in the wire bonding process Even when the temperature is raised to about 150° C., the semiconductor chip is difficult to move due to the impact of wire bonding, and the force is easily transmitted to the wire bonding pad, so that the wire can be properly bonded.

The die-bonding film 20 preferably exhibits a storage elastic modulus E′ of 20 to 200 MPa, more preferably 22 to 150 MPa at 250° C. measured at a frequency of 10 Hz after heat curing. A humidity-resistant solder reflow test in which the semiconductor-related parts are heated to about 250° C. is generally performed as a reliability evaluation of semiconductor-related parts. can make it difficult for the die-bonding film to peel off from the adherend even when heated up to about 250° C. in a humidity-resistant solder reflow test.

In addition, after heat-curing the said die-bonding film means the thing after heat-curing a die-bonding film at 175 degreeC for 1 hour. After the above heat curing, the die-bonding film may be incompletely cured, or may be cured (completely cured) to a state where curing hardly progresses further (for example, after incomplete curing and further curing). (After curing by performing a post-curing step, etc., described later).

In this embodiment, the die-bonding film 20 and the adhesive constituting the die-bonding film 20 may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may react with a curing agent to form a bond. It may also contain a thermoplastic resin having a thermosetting functional group to obtain. When the adhesive constituting the die-bonding film 20 contains a thermoplastic resin having a thermosetting functional group, the adhesive does not need to contain a thermosetting resin (such as an epoxy resin). The die bond film 20 may have a single layer structure or a multilayer structure.

When the die-bonding film 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting resin. A polyimide resin etc. are mentioned. Only one type of the thermosetting resin may be used, or two or more types may be used. Epoxy resin is preferable as the thermosetting resin because it tends to contain less ionic impurities that may cause corrosion of the semiconductor chip to be die-bonded. Phenol resin is preferable as a curing agent for epoxy resin.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, ortho Cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, glycidylamine type epoxy resins, and the like. Among them, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are preferable because they are rich in reactivity with phenol resin as a curing agent and excellent in heat resistance.

Phenolic resins that can act as curing agents for epoxy resins include, for example, novolac-type phenolic resins, resol-type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene. Examples of the novolak-type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin, and the like. Only one type of the phenol resin may be used, or two or more types may be used. Among them, phenol novolac resins and phenol aralkyl resins are preferable from the viewpoint of improving the connection reliability of the adhesive when used as a curing agent for epoxy resins as adhesives for die bonding.

In the die-bonding film 20, from the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenolic resin, the phenolic resin preferably contains 0.00 hydroxyl group per equivalent of the epoxy group in the epoxy resin component. It is contained in an amount of 5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents.

When the die-bonding film 20 contains a thermosetting resin, the content of the thermosetting resin should be approximately equal to the total mass of the die-bonding film 20 from the viewpoint of allowing the die-bonding film 20 to appropriately function as a thermosetting adhesive. 5 to 60% by mass, more preferably 10 to 50% by mass.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, fluorine resins, and the like. Only one kind of the thermoplastic resin may be used, or two or more kinds thereof may be used. As the thermoplastic resin, an acrylic resin is preferable because it contains few ionic impurities and has high heat resistance, so that it is easy to secure the bonding reliability with the die-bonding film 20 .

The above acrylic resin is preferably a polymer containing a structural unit derived from (meth)acrylic acid ester as a structural unit having the largest mass ratio. Examples of the (meth)acrylic acid ester include the (meth)acrylic acid esters exemplified as the (meth)acrylic acid esters forming the acrylic polymer that can be contained in the additive-type radiation-curable pressure-sensitive adhesive described above. be done. The acrylic resin may contain structural units derived from other monomer components copolymerizable with the (meth)acrylic acid ester. Examples of other monomer components include carboxy group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, and other functional group-containing monomers. Monomers, various multifunctional monomers, and the like are exemplified. Specifically, other monomer components constituting the acrylic polymer that can be contained in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 are exemplified. can be used. From the viewpoint of achieving high cohesion in the die-bonding film 20, the acrylic resin is preferably a (meth)acrylic acid ester (particularly, a (meth)acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms). , a copolymer of a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (especially a polyglycidyl-based polyfunctional monomer), more preferably ethyl acrylate, butyl acrylate, and acrylic acid is a copolymer of acrylonitrile and polyglycidyl (meth)acrylate.

The acrylic resin preferably has a glass transition temperature (Tg) of 5 to 35° C., more preferably 10 to 30° C., from the viewpoint that the storage elastic modulus and loss elastic modulus described above are easily within the desired ranges. is.

When the die-bonding film 20 contains a thermoplastic resin together with a thermosetting resin, the content of the thermoplastic resin is adjusted with the content of the thermosetting resin to achieve the desired storage elastic modulus and loss elastic modulus. From the viewpoint of being easily within the range of 30 to 70% by mass is preferable, more preferably 40 to 60% by mass, and still more preferably 45 to 55% by mass.

When the die-bonding film 20 contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in this thermosetting functional group-containing acrylic resin preferably contains structural units derived from (meth)acrylic acid ester as the largest proportion of structural units by mass. Examples of the (meth)acrylic acid ester include the (meth)acrylic acid esters exemplified as the (meth)acrylic acid esters forming the acrylic polymer that can be contained in the additive-type radiation-curable pressure-sensitive adhesive described above. be done. On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include glycidyl group, carboxyl group, hydroxy group, isocyanate group and the like. Among them, a glycidyl group and a carboxy group are preferred. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxy group-containing acrylic resin are particularly preferable. In addition, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin. There are other things. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol-based compound as the curing agent, and for example, the various phenolic resins described above can be used.

The die-bonding film 20 preferably contains filler. By adding a filler to the die-bonding film 20, the above-described storage elastic modulus and loss elastic modulus of the die-bonding film 20 can be easily adjusted. Furthermore, physical properties such as electrical conductivity, thermal conductivity, and elastic modulus can be adjusted. Examples of fillers include inorganic fillers and organic fillers, with inorganic fillers being particularly preferred. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, and crystals. In addition to crystalline silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black, graphite and the like can be used. The filler may have various shapes such as spherical, needle-like, and flake-like. As said filler, only 1 type may be used and 2 or more types may be used.

The average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle size is 0.005 μm or more, wettability and adhesiveness to an adherend such as a semiconductor wafer are further improved. When the average particle diameter is 10 μm or less, the effect of the filler added for imparting the above characteristics can be made sufficient, and heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a luminous intensity type particle size distribution meter (eg, trade name “LA-910” manufactured by Horiba, Ltd.).

When the die-bonding film 20 contains a filler, the content ratio of the filler is 30 to 70% with respect to the total mass of the die-bonding film 20, from the viewpoint that the above-described storage elastic modulus and loss elastic modulus are easily within the desired ranges. % by mass is preferable, more preferably 40 to 60% by mass, still more preferably 42 to 55% by mass.

The die-bonding film 20 may contain other components as necessary. Examples of other components include curing catalysts, flame retardants, silane coupling agents, ion trapping agents, and dyes. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane and the like. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, and benzotriazole. Only one kind of the other additives may be used, or two or more kinds thereof may be used.

In particular, the die-bonding film 20 contains a thermoplastic resin (especially an acrylic resin), a thermosetting resin, and a filler from the viewpoint of easily setting the above-described storage elastic modulus and loss elastic modulus within the desired ranges. The content of the thermoplastic resin (especially acrylic resin) is 30 to 70% by mass (preferably 40 to 60% by mass, more preferably 45 to 55% by mass) relative to the total mass of the organic components excluding the filler in 20. , the filler content is preferably 30 to 70% by mass (preferably 40 to 60% by mass, more preferably 42 to 55% by mass) relative to the total mass of the die-bonding film 20.

The thickness of the die-bonding film 20 (total thickness in the case of a laminate) is not particularly limited, but is, for example, 1 to 200 μm. The upper limit is preferably 100 µm, more preferably 80 µm. The lower limit is preferably 3 μm, more preferably 5 μm.

The die-bonding film 20 preferably has a glass transition temperature (Tg) of 0° C. or higher, more preferably 10° C. or higher. When the glass transition temperature is 0° C. or higher, the die-bonding film 20 can be easily cut by cool expansion. The upper limit of the glass transition temperature of the die-bonding film 20 is 100° C., for example.

As shown in FIG. 1, the die-bonding film 20 may be a single-layer die-bonding film. In this specification, a single layer refers to a layer having the same composition, and includes a form in which a plurality of layers having the same composition are laminated. However, the die-bonding film in the dicing die-bonding film of the present invention is not limited to this example, and may have, for example, a multilayer structure in which two or more types of adhesive films having different compositions are laminated.

A dicing die-bonding film 1, which is an embodiment of the dicing die-bonding film of the present invention, is manufactured, for example, as follows. First, the substrate 11 can be obtained by forming a film by a known or commonly used film forming method. Examples of the film-forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.

Next, on the base material 11, a composition (adhesive composition) for forming an adhesive layer containing an adhesive and a solvent for forming the adhesive layer 12 is applied to form a coating film. The adhesive layer 12 can be formed by solidifying the coating film by desolvation, curing, or the like depending on the conditions. Examples of the coating method include known or commonly used coating methods such as roll coating, screen coating, and gravure coating. The desolvation conditions are, for example, a temperature of 80 to 150° C. and a time of 0.5 to 5 minutes. Alternatively, the adhesive layer 12 may be formed by coating the adhesive composition on the separator to form a coating film, and then solidifying the coating film under the solvent removal conditions described above. After that, the pressure-sensitive adhesive layer 12 is pasted together with the separator onto the substrate 11 . The dicing tape 10 can be produced as described above.

For the die-bonding film 20, first, a composition (adhesive composition) for forming the die-bonding film 20 containing a resin, a filler, a curing catalyst, a solvent, and the like is prepared. Next, after the adhesive composition is applied on the separator to form a coating film, the coating film is solidified by desolvation, curing, or the like, if necessary, to form the die bond film 20 . The coating method is not particularly limited, and examples thereof include known or commonly used coating methods such as roll coating, screen coating and gravure coating. The desolvation conditions are, for example, a temperature of 70 to 160° C. and a time of 1 to 5 minutes.

Subsequently, the separators are peeled off from the dicing tape 10 and the die-bonding film 20, respectively, and the die-bonding film 20 and the pressure-sensitive adhesive layer 12 are bonded together so that they are bonded together. Bonding can be performed by pressure bonding, for example. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50.degree. C., more preferably 35 to 45.degree. Further, the linear pressure is not particularly limited, and is preferably 0.1 to 20 kgf/cm, more preferably 1 to 10 kgf/cm.

As described above, when the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer, when the pressure-sensitive adhesive layer 12 is irradiated with radiation such as ultraviolet rays after bonding the die-bonding film 20, the pressure-sensitive adhesive layer 12 may be adhered from the substrate 11 side, for example. The agent layer 12 is irradiated with radiation, and the irradiation dose is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. In the dicing die-bonding film 1, the region (irradiation region R) where irradiation is performed as a measure to reduce the adhesive force of the adhesive layer 12 is usually a region in the adhesive layer 12 excluding the peripheral portion in the bonding region of the die-bonding film 20. be. When the irradiation region R is provided partially, it can be done through a photomask having a pattern corresponding to the region excluding the irradiation region R formed thereon. Moreover, the method of forming the irradiation area|region R by irradiating a radiation spotly is also mentioned.

As described above, for example, the dicing die-bonding film 1 shown in FIG. 1 can be produced. The dicing die-bonding film 1 may be provided with a separator (not shown) on the die-bonding film 20 side so as to cover at least the die-bonding film 20 . If the die-bonding film 20 is smaller than the adhesive layer 12 of the dicing tape 10 and there is a region where the die-bonding film 20 is not bonded in the adhesive layer 12, for example, the separator separates the die-bonding film 20 and the adhesive layer 12. It may be provided in at least a covering form. The separator is an element for protecting at least the die-bonding film 20 (for example, the die-bonding film 20 and the pressure-sensitive adhesive layer 12) from being exposed, and is peeled off from the film when the dicing die-bonding film 1 is used. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film and paper surface-coated with a release agent such as a fluorine-based release agent and a long-chain alkyl acrylate release agent. .

[Method for manufacturing a semiconductor device]
A semiconductor device can be manufactured using the dicing die-bonding film of the present invention. Specifically, on the die bond film side of the dicing die bond film of the present invention, a step of attaching a semiconductor wafer divided body containing a plurality of semiconductor chips, or a semiconductor wafer that can be separated into a plurality of semiconductor chips ("process A”), and a step of expanding the dicing tape in the dicing die-bonding film of the present invention under relatively low temperature conditions to cut at least the die-bonding film to obtain a semiconductor chip with a die-bonding film ( and a step of expanding the distance between the semiconductor chips with the die-bonding film by expanding the dicing tape under relatively high temperature conditions (sometimes referred to as "step C"). ) and the step of picking up the semiconductor chip with the die-bonding film (sometimes referred to as “step D”), a semiconductor device can be manufactured.

The divided body of the semiconductor wafer containing the plurality of semiconductor chips used in step A or the semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 2A and 2B, dividing grooves 30a are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already fabricated on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is Then, after bonding the wafer processing tape T1 having the adhesive surface T1a to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and then the semiconductor wafer W is held on the first surface of the semiconductor wafer W. A division groove 30a having a predetermined depth is formed on the surface Wa side using a rotating blade such as a dicing machine. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor chips (the dividing grooves 30a are schematically represented by thick lines in FIGS. 2 to 4).

Next, as shown in FIG. 2C, a wafer processing tape T2 having an adhesive surface T2a is attached to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is removed from the semiconductor wafer W. and perform stripping.

Next, as shown in FIG. 2(d), in a state where the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb to a predetermined thickness. (wafer thinning process). Grinding can be performed using a grinding device equipped with a grinding wheel. In this embodiment, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed by this wafer thinning process. Specifically, the semiconductor wafer 30A has a portion (connecting portion) that connects portions of the wafer that are to be separated into the plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is appropriately selected depending on the semiconductor device to be manufactured.

(Step A)
In step A, on the die bond film 20 side of the dicing die bond film 1, a divided body of a semiconductor wafer including a plurality of semiconductor chips or a semiconductor wafer that can be singulated into a plurality of semiconductor chips is attached.

In one embodiment of the process A, the semiconductor wafer 30A held by the wafer processing tape T2 is attached to the die bond film 20 of the dicing die bond film 1, as shown in FIG. 3(a). Thereafter, as shown in FIG. 3B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die-bonding film 1 is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is bonded to the die-bonding film 20 instead of the above-described radiation irradiation in the manufacturing process of the dicing die-bonding film 1. After that, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the substrate 11 side. The irradiation dose is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. In the dicing die-bonding film 1, the region where irradiation is performed as a measure to reduce the adhesive strength of the adhesive layer 12 (irradiated region R shown in FIG. 1) is, for example, the peripheral edge portion in the bonding region of the die-bonding film 20 in the adhesive layer 12. This is the area excluding

(Step B)
In step B, the dicing tape 10 in the dicing die-bonding film 1 is expanded under relatively low temperature conditions, and at least the die-bonding film 20 is cut to obtain a die-bonding film-attached semiconductor chip.

In one embodiment in step B, first, after affixing the ring frame 41 on the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, as shown in FIG. A dicing die-bonding film 1 is fixed to a holder 42 of an expanding device.

Next, a first expansion step (cool expansion step) is performed under relatively low temperature conditions as shown in FIG. , the die-bonding film 20 of the dicing die-bonding film 1 is cut into small pieces of the die-bonding film 21 to obtain a semiconductor chip 31 with a die-bonding film. In the cool expansion step, a hollow columnar push-up member 43 provided in the expansion device is brought into contact with the dicing tape 10 at the lower side of the dicing die-bonding film 1 in the drawing and lifted to lift the dicing die-bonding film 1 to which the semiconductor wafer 30A is bonded. The dicing tape 10 is expanded so as to extend in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the conditions that a tensile stress within the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10 . The temperature conditions in the cool expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the push-up member 43 is lifted) in the cool expansion step is preferably 0.1 to 100 mm/sec. Moreover, the expansion amount in the cool expansion step is preferably 3 to 16 mm.

In the process B, when a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips is used, the semiconductor wafer 30A is broken at a thin and fragile portion, and is singulated into semiconductor chips 31 . Along with this, in the process B, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the die-bonding film 20 in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded. A tensile stress generated in the dicing tape 10 acts on the portion of the dividing groove between the grooves located in the vertical direction in the drawing, in a state where such a deformation suppressing action does not occur. As a result, the die-bonding film 20 is cleaved at a position perpendicular to the dividing groove between the semiconductor chips 31 . After the breaking by expanding, as shown in FIG. 4C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10 .

(Process C)
In step C, the dicing tape 10 is expanded under relatively high temperature conditions to widen the distance between the semiconductor chips with the die-bonding film.

In one embodiment of the process C, first, a second expanding process (normal temperature expanding process) is performed under relatively high temperature conditions as shown in FIG. (separation distance). In step C, the hollow columnar push-up member 43 provided in the expanding device is raised again to expand the dicing tape 10 of the dicing die-bonding film 1 . The temperature condition in the second expanding step is, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed (the speed at which the push-up member 43 is lifted) in the second expansion step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. Also, the expansion amount in the second expansion step is, for example, 3 to 16 mm. In step C, the separation distance between the semiconductor chips 31 with the die-bonding film is increased to such an extent that the semiconductor chips 31 with the die-bonding film can be appropriately picked up from the dicing tape 10 in the pickup step described later. After widening the separation distance by expanding, as shown in FIG. From the viewpoint of suppressing the narrowing of the separation distance between the semiconductor chips 31 with the die-bonding film on the dicing tape 10 after the expanded state is released, the portion of the dicing tape 10 outside the semiconductor chip 31 holding area is removed before the expanded state is released. It is preferable to shrink by heating.

After step C, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with the die-bonding film using a cleaning liquid such as water may be included if necessary.

(Process D)
In step D (pickup step), the semiconductor chips with the die-bonding film that have been separated into pieces are picked up. In one embodiment of the process D, the semiconductor chip 31 with the die-bonding film is picked up from the dicing tape 10 as shown in FIG. 6 after the above cleaning process if necessary. For example, the semiconductor chip 31 with the die-bonding film to be picked up is pushed up through the dicing tape 10 by raising the pin member 44 of the pick-up mechanism on the lower side of the dicing tape 10 in the drawing, and then is sucked and held by the suction jig 45 . . In the pick-up process, the thrust speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the thrust amount of the pin member 44 is, for example, 100 to 500 μm.

The manufacturing method of the semiconductor device may include other processes other than the processes A to D. For example, in one embodiment, as shown in FIG. 7A, the picked-up semiconductor chip 31 with a die-bonding film is temporarily fixed to an adherend 51 via the die-bonding film 21 (temporary fixing step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive strength of the die-bonding film 21 at 25° C. when temporarily fixed to the adherend 51 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa. The structure in which the die bond film 21 has a shear adhesive strength of 0.2 MPa or more is such that, in the wire bonding process described later, shear occurs at the bonding surface between the die bond film 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration or heating. Wire bonding can be appropriately performed while suppressing deformation. Further, the shear adhesive strength of the die-bonding film 21 at 175° C. when temporarily fixed to the adherend 51 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa.

Next, as shown in FIG. 7B, the electrode pads (not shown) of the semiconductor chip 31 and the terminal portions (not shown) of the adherend 51 are electrically connected via bonding wires 52 ( wire bonding process). The connection between the electrode pads of the semiconductor chip 31 and the terminal portions of the adherend 51 and the bonding wires 52 can be realized by ultrasonic welding accompanied by heating, and is performed so as not to thermally harden the die bond film 21 . As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250.degree. C., preferably 80 to 220.degree. Also, the heating time is several seconds to several minutes.

Next, as shown in FIG. 7C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing step). In the sealing process, thermosetting of the die-bonding film 21 proceeds. In the sealing process, for example, the sealing resin 53 is formed by a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing process, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in the sealing process, a post-curing process for completely curing the sealing resin 53 is performed after the sealing process. Even if the die-bonding film 21 is not completely heat-cured in the sealing process, the die-bonding film 21 can be completely heat-cured together with the sealing resin 53 in the post-curing process. In the post-curing step, the heating temperature is, for example, 165 to 185° C., and the heating time is, for example, 0.5 to 8 hours.

In the above embodiment, as described above, after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51, the wire-bonding process is performed without completely thermally curing the die-bonding film 21 . Instead of such a configuration, in the method of manufacturing a semiconductor device described above, after the semiconductor chip 31 with the die-bonding film is temporarily fixed to the adherend 51, the die-bonding film 21 may be thermally cured and then the wire bonding process may be performed. good.

In the method of manufacturing the semiconductor device described above, as another embodiment, the wafer thinning process shown in FIG. 8 may be performed instead of the wafer thinning process described above with reference to FIG. 2(d). After the process described above with reference to FIG. 2(c), in the wafer thinning process shown in FIG. The wafer is thinned by grinding from the second surface Wb to form a semiconductor wafer division 30B including a plurality of semiconductor chips 31 and held by the wafer processing tape T2. In the wafer thinning process, a method (first method) of grinding the wafer until the dividing grooves 30a are exposed on the second surface Wb side may be adopted, or the dividing grooves 30a may be reached from the second surface Wb side. A method of grinding the wafer to the front and then forming a semiconductor wafer divided body 30B by causing a crack between the dividing groove 30a and the second surface Wb by the action of the pressing force from the rotary grindstone to the wafer (second method) may be adopted. The depth from the first surface Wa of the division grooves 30a formed as described above with reference to FIGS. In FIG. 8, the dividing groove 30a that has undergone the first method, or the dividing groove 30a that has undergone the second method and the cracks connected thereto are schematically indicated by thick lines. In the method of manufacturing a semiconductor device described above, in step A, the semiconductor wafer divisions 30B thus manufactured are used as the semiconductor wafer divisions instead of the semiconductor wafers 30A, and each of the semiconductor wafer divisions described above with reference to FIGS. process may be performed.

9A and 9B show step B in this embodiment, that is, the first expanding step (cool expanding step) performed after bonding the semiconductor wafer division 30B to the dicing die-bonding film 1. FIG. In the step B of this embodiment, a hollow columnar push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 on the lower side of the dicing die-bonding film 1 in the figure and lifted, so that the semiconductor wafer divisions 30B are bonded together. The dicing tape 10 of the dicing die bond film 1 is expanded in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer division 30B. The tensile stress in this expansion is appropriately set. The temperature condition in the cool-expanding step is, for example, 0°C or less, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed (the speed at which the push-up member 43 is lifted) in the cool expansion process is preferably 1 to 400 mm/sec. Moreover, the expansion amount in the cool expansion step is preferably 1 to 300 mm. Through such a cool expansion process, the die-bonding film 20 of the dicing die-bonding film 1 is cut into small pieces of the die-bonding film 21 to obtain semiconductor chips 31 with die-bonding films. Specifically, in the cool expansion process, the die bond film 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded is deformed in each region where the semiconductor chips 31 of the semiconductor wafer division 30B are in close contact. While the deformation is suppressed, the tensile stress generated in the dicing tape 10 acts on the portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the figure in a state where such a deformation suppressing action does not occur. As a result, the die-bonding film 20 is cleaved at a portion of the dividing groove 30a between the semiconductor chips 31 located in the vertical direction in the figure.

In the method of manufacturing a semiconductor device described above, as still another embodiment, instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in step A, a semiconductor wafer 30C manufactured as follows may be used.

In this embodiment, first, a modified region 30b is formed in a semiconductor wafer W, as shown in FIGS. 10(a) and 10(b). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already fabricated on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is Then, after bonding the wafer processing tape T3 having the adhesive surface T3a to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held by the wafer processing tape T3, and a condensing point is formed inside the wafer. The combined laser beams are applied to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the dividing line, and the semiconductor wafer W undergoes ablation due to multiphoton absorption. A region 30b is formed. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chips. A method for forming the modified region 30b on the dividing line by irradiating a laser beam on a semiconductor wafer is described in detail, for example, in Japanese Patent Application Laid-Open No. 2002-192370. It is adjusted appropriately within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser excitation Nd: YAG laser Wavelength 1064 nm
Laser light spot cross-sectional area 3.14×10 ⁻⁸ cm ²
Oscillation mode Q-switch pulse Repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00
Polarization characteristics Linear polarization (B) condenser lens Magnification 100 times or less NA 0.55
Transmittance to laser light wavelength: 100% or less (C) Moving speed of the table on which the semiconductor substrate is placed: 280 mm/sec or less

Next, as shown in FIG. 10(c), in a state where the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb to a predetermined thickness. By this, a semiconductor wafer 30C that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the method of manufacturing a semiconductor device described above, in step A, the semiconductor wafer 30C thus manufactured as a semiconductor wafer that can be separated into individual pieces is used instead of the semiconductor wafer 30A, and the semiconductor wafer 30C described above with reference to FIGS. 3 to 7 is used. Each step may be performed.

FIGS. 11A and 11B show step B in this embodiment, that is, the first expanding step (cool expanding step) performed after bonding the semiconductor wafer 30C to the dicing die-bonding film 1. FIG. In the cool expanding step, a hollow columnar push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the dicing die-bonding film 1 in the figure and lifted to lift the dicing die-bonding film 1 to which the semiconductor wafer 30C is bonded. The dicing tape 10 is expanded so as to extend in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C. The tensile stress in this expansion is appropriately set. The temperature condition in the cool-expanding step is, for example, 0°C or less, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed (the speed at which the push-up member 43 is lifted) in the cool expansion process is preferably 1 to 400 mm/sec. Moreover, the expansion amount in the cool expansion step is preferably 1 to 300 mm. Through such a cool expansion process, the die-bonding film 20 of the dicing die-bonding film 1 is cut into small pieces of the die-bonding film 21 to obtain semiconductor chips 31 with die-bonding films. Specifically, in the cool expansion process, cracks are formed in the fragile modified regions 30b of the semiconductor wafer 30C, and the semiconductor chips 31 are singulated. Along with this, in the cool expansion process, in the die-bonding film 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region where each semiconductor chip 31 of the semiconductor wafer 30C is in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the crack-formed portion of the wafer located in the vertical direction in the figure in a state in which such a deformation suppressing action does not occur. As a result, the die-bonding film 20 is cut at the crack-formed location between the semiconductor chips 31 in the vertical direction in the figure.

In the method for manufacturing a semiconductor device described above, the dicing die-bonding film 1 can be used for obtaining a semiconductor chip with a die-bonding film as described above. It can also be used for the purpose of obtaining a semiconductor chip with a die-bonding film in. Between the semiconductor chips 31 in such three-dimensional mounting, a spacer may be interposed together with the die-bonding film 21, or no spacer may be interposed.

EXAMPLES The present invention will be described in more detail below with reference to Examples, but the present invention is not limited to these Examples.

Example 1
(Preparation of dicing tape)
100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), and 0.2 parts by mass of benzoyl peroxide were added to a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device. 4 parts by mass and 80 parts by mass of toluene were added, and polymerization was carried out at 60° C. for 10 hours in a nitrogen stream to obtain a solution containing acrylic polymer A.
1.2 parts by mass of 2-methacryloyloxyethyl isocyanate (MOI) is added to the solution containing acrylic polymer A, and an addition reaction is performed at 50° C. for 60 hours in an air stream to obtain a solution containing acrylic polymer A′. got
Next, with respect to 100 parts by mass of acrylic polymer A', 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Corporation) and a photopolymerization initiator (trade name "Irgacure 184", BASF Corporation) was added to prepare a pressure-sensitive adhesive composition A.
The pressure-sensitive adhesive composition A thus obtained was applied onto the silicone-treated surface of a PET separator and heated at 120° C. for 2 minutes to remove the solvent, thereby forming a pressure-sensitive adhesive layer A having a thickness of 10 μm. Next, an EVA film (manufactured by Gunze Ltd., thickness 115 μm) was adhered as a substrate to the exposed surface of the adhesive layer A, and stored at 23° C. for 72 hours to prepare a dicing tape A.

(Preparation of die-bonding film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol Resin (trade name “MEH-7851ss”, manufactured by Meiwa Kasei Co., Ltd.) 50 parts by mass, spherical silica (trade name “SO-25R”, manufactured by Admatechs Co., Ltd.) 190 parts by mass, and a curing catalyst (trade name “ CURESOL 2PHZ", manufactured by Shikoku Kasei Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition A having a solid content concentration of 20% by mass. Next, it was coated on the silicone-treated surface of a PET separator (thickness: 50 μm) and heated at 130° C. for 2 minutes to remove the solvent, thereby producing a die-bonding film A with a thickness of 10 μm. Table 1 shows the acrylic resin content relative to the total mass of organic components (the total mass of components excluding spherical silica) and the silica content relative to the total mass of die bond film A in die bond film A.

(Preparation of dicing die-bonding film)
The PET-based separator was peeled off from the dicing tape A, and the die-bonding film A was attached to the exposed adhesive layer. In bonding, the center of the dicing tape and the center of the die-bonding film were aligned. A hand roller was used for the bonding. As described above, a dicing die-bonding film having a laminated structure including a dicing tape and a die-bonding film was produced.

Example 2
(Preparation of die-bonding film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol Resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.) 50 parts by mass, spherical silica (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 200 parts by mass, and a curing catalyst (trade name " CURESOL 2PHZ", manufactured by Shikoku Kasei Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition B having a solid content concentration of 20% by mass. Next, it was coated on the silicone-treated surface of a PET separator (thickness: 50 μm) and heated at 130° C. for 2 minutes to remove the solvent, thereby producing a die-bonding film B with a thickness of 10 μm. Table 1 shows the acrylic resin content relative to the total mass of organic components (the total mass of components excluding spherical silica) and the silica content relative to the total mass of die bond film B in die bond film B.

(Preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the die-bonding film B was used instead of the dicing bond film A.

Example 3
(Preparation of die-bonding film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol Resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.) 50 parts by mass, spherical silica (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 130 parts by mass, and a curing catalyst (trade name " CURESOL 2PHZ", manufactured by Shikoku Kasei Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition C having a solid content concentration of 20% by mass. Next, it was coated on the silicone-treated surface of a PET separator (thickness: 50 μm) and heated at 130° C. for 2 minutes to remove the solvent, thereby producing a die-bonding film C with a thickness of 10 μm. Table 1 shows the acrylic resin content relative to the total mass of organic components (the total mass of components excluding spherical silica) and the silica content relative to the total mass of the die bond film C in the die bond film C.

(Preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the die-bonding film C was used instead of the dicing bond film A.

Comparative example 1
(Preparation of die-bonding film)
Acrylic resin (trade name "SG-708-6", manufactured by Nagase ChemteX Corporation, glass transition temperature 4 ° C.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass , Phenolic resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.) 50 parts by mass, spherical silica (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 100 parts by mass, and a curing catalyst (trade name 0.6 parts by mass of "Curesol 2PHZ" (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition D having a solid content concentration of 20% by mass. Next, it was coated on the silicone-treated surface of a PET separator (50 μm thick) and heated at 130° C. for 2 minutes to remove the solvent, thereby producing a die bond film D with a thickness of 10 μm. Table 1 shows the acrylic resin content relative to the total mass of organic components (the total mass of components excluding spherical silica) and the silica content relative to the total mass of the die bond film D in the die bond film D.

(Preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the die-bonding film D was used instead of the dicing bond film A.

Comparative example 2
(Preparation of die-bonding film)
Acrylic resin (trade name "SG-70L", manufactured by Nagase ChemteX Corporation, glass transition temperature -13 ° C.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 40 parts by mass, Phenolic resin (trade name “MEH-7851ss”, manufactured by Meiwa Kasei Co., Ltd.) 40 parts by mass, spherical silica (trade name “SO-25R”, manufactured by Admatechs Co., Ltd.) 200 parts by mass, and a curing catalyst (trade name 0.6 parts by mass of "Cure Sol 2PHZ" (manufactured by Shikoku Kasei Kogyo Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition E having a solid content concentration of 20% by mass. Next, it was coated on the silicone-treated surface of a PET separator (thickness: 50 μm) and heated at 130° C. for 2 minutes to remove the solvent, thereby producing a die-bonding film E with a thickness of 10 μm. Table 1 shows the acrylic resin content relative to the total mass of organic components (the total mass of components excluding spherical silica) and the silica content relative to the total mass of die bond film E in die bond film E.

(Preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the die-bonding film E was used instead of the dicing bond film A.

Comparative example 3
(Preparation of die-bonding film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol Resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.) 50 parts by mass, spherical silica (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 100 parts by mass, and a curing catalyst (trade name " CURESOL 2PHZ", manufactured by Shikoku Kasei Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition F having a solid content concentration of 20% by mass. Next, it was coated on the silicone-treated surface of a PET separator (50 μm thick) and heated at 130° C. for 2 minutes to remove the solvent, thereby producing a die bond film F with a thickness of 10 μm. Table 1 shows the acrylic resin content relative to the total mass of organic components (the total mass of components excluding spherical silica) and the silica content relative to the total mass of die bond film F in die bond film F.

(Preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the die-bonding film F was used instead of the dicing bond film A.

Comparative example 4
(Preparation of die-bonding film)
Acrylic resin (trade name "SG-P3", manufactured by Nagase ChemteX Corporation, glass transition temperature 12 ° C.) 100 parts by mass, epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Corporation) 45 parts by mass, phenol Resin (trade name “MEH-7851ss”, manufactured by Meiwa Kasei Co., Ltd.) 50 parts by mass, spherical silica (trade name “SO-25R”, manufactured by Admatechs Co., Ltd.) 250 parts by mass, and a curing catalyst (trade name “ 0.5 part by mass of CURESOL 2PHZ, manufactured by Shikoku Kasei Kogyo Co., Ltd. was added to methyl ethyl ketone and mixed to obtain an adhesive composition G having a solid content concentration of 20% by mass. Next, it was coated on the silicone-treated surface of a PET separator (50 μm thick) and heated at 130° C. for 2 minutes to remove the solvent, thereby producing a die bond film G with a thickness of 10 μm. Table 1 shows the acrylic resin content relative to the total mass of organic components (the total mass of components excluding spherical silica) and the silica content relative to the total mass of the die bond film G in the die bond film G.

(Preparation of dicing die-bonding film)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the die-bonding film G was used instead of the dicing bond film A.

<Evaluation>
The die-bonding films and dicing die-bonding films obtained in Examples and Comparative Examples were evaluated as follows. Table 1 shows the results.

(Storage modulus E′ at 25° C. measured at a frequency of 10 Hz and storage modulus E′ at −15° C. measured at a frequency of 10 Hz)
From the die-bonding films obtained in Examples and Comparative Examples, a strip having a width of 4 mm and a length of 40 mm was cut out with a cutter knife to obtain a test piece, and a solid viscoelasticity measuring device (measuring device: Rheogel-E4000, manufactured by UBM Co., Ltd. ) was used to measure the dynamic storage modulus in a tensile mode in a temperature range of -50 to 100°C under the conditions of a frequency of 10Hz, a heating rate of 5°C/min, and an initial chuck distance of 22.5mm. Then, the values at 25 ° C. and -15 ° C. are read, and the values are respectively the storage modulus at 25 ° C. measured under the condition of the frequency of 10 Hz, and the storage elasticity at -15 ° C. measured under the condition of the frequency of 10 Hz. It was obtained as the rate E'. The evaluation results are shown in the columns of “storage elastic modulus E′ (25° C., 10 Hz)” and “storage elastic modulus E′ (−15° C., 10 Hz)” in Table 1, respectively.

(Storage modulus G′ at 130° C. measured at a frequency of 1 Hz and loss modulus G″ at 130° C. measured at a frequency of 1 Hz)
The die bond films obtained in Examples and Comparative Examples were laminated to a thickness of 300 μm and punched out into a circular shape with a punch of 10 mmφ to prepare a measurement sample. Storage modulus and loss modulus were measured in the range of 75 to 150° C. under conditions of 250 μm gap, 10° C./min heating rate, 5 rad/sec frequency, and 10% strain using a measuring jig of 8 mmΦ (measuring device : HAAKE MARS III, manufactured by Thermo Scientific). Then, the values of the storage elastic modulus and the loss elastic modulus at 130° C. are read, and these values are measured under the conditions of the storage elastic modulus G′ at 130° C. and the frequency of 1 Hz, respectively. It was obtained as a loss elastic modulus G″ at 130°C. The evaluation results are shown in the columns of “storage modulus G′ (130° C., 1 Hz)” and “loss modulus G″ (130° C., 1 Hz)” in Table 1, respectively.

(Storage modulus E′ at 150° C. measured at a frequency of 10 Hz after heat curing, and storage modulus E′ at 250° C. measured at a frequency of 10 Hz after heat curing)
The die-bonding films obtained in Examples and Comparative Examples were cured by heating at a temperature of 175° C. for 1 hour, and then strips with a width of 4 mm and a length of 40 mm were cut from the thermally cured die-bonding films with a utility knife. Using a solid viscoelasticity measuring device (RSA III, manufactured by Rheometric Co., Ltd.), a frequency of 10 Hz, a temperature increase rate of 10 ° C./min, and an initial chuck distance of 22.5 mm, a temperature of 0 to 300 ° C. A range of dynamic storage modulus was measured in tensile mode. Then, the values at 150 ° C. and 250 ° C. are read, and these values are measured under the conditions of the storage modulus at 150 ° C. and the frequency of 10 Hz after heat curing, respectively. It was obtained as a storage modulus E' at 250°C. The evaluation results are shown in the columns of "post-curing storage modulus E' (150°C, 10 Hz)" and "post-curing storage modulus E' (250°C, 10 Hz)" in Table 1, respectively.

(Breakability and float during cool expansion)
Using the product name "ML300-Integration" (manufactured by Tokyo Seimitsu Co., Ltd.) as a laser processing device, the focal point is aligned with the inside of a 12-inch semiconductor wafer, and along the grid-shaped (10 mm × 10 mm) dividing lines. A modified region was formed inside the semiconductor wafer by irradiating laser light from the surface thereof. The laser light irradiation was performed under the following conditions.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14×10 ⁻⁸ cm ²
Oscillation mode Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20 μJ/pulse
Laser beam quality TEM00 40
Polarization characteristics Linear polarization (B) Focusing lens
Magnification 50x
NA 0.55
Transmittance for laser light wavelength 60%
(C) Movement speed of the stage on which the semiconductor substrate is placed: 100 mm/sec

After forming the modified region inside the semiconductor wafer, a protective tape for back grinding is attached to the surface of the semiconductor wafer, and the thickness of the semiconductor wafer is reduced using a back grinder (trade name “DGP8760”, manufactured by Disco Co., Ltd.). The back surface was ground to a thickness of 30 μm.

A semiconductor wafer having a modified region formed thereon and a dicing ring were attached to the dicing die-bonding films obtained in Examples and Comparative Examples. Then, the semiconductor wafer and the die bond film were cut using a die separator (trade name “DDS2300” manufactured by DISCO Corporation). Specifically, first, in a cool expander unit, cool expansion was performed under conditions of a temperature of -15°C, an expansion speed of 200 mm/sec, and an expansion amount of 12 mm to cut the semiconductor wafer and the die bond film. After that, normal temperature expansion was performed in a heat expander unit under the conditions of room temperature, expansion speed of 1 mm/sec, and expansion amount of 7 mm. Then, while maintaining the expanded state, the dicing tape was thermally shrunk around the outer peripheral portion of the semiconductor chip at a heating temperature of 200° C., an air volume of 40 L/min, a heating distance of 20 mm, and a rotation speed of 5°/sec. Then, the above sample was subjected to pick-up evaluation of 50 chips with a die bonder (trade name “Die Bonder SPA-300”, manufactured by Shinkawa Co., Ltd.) with 5 pins and a pick-up height of 500 μm, and the pick-up rate was 90% or more. The case was evaluated as ◯, and the case of less than 90% was evaluated as x. The evaluation results are shown in the column of "breakability" in Table 1.

In addition, the area of the portion where the die-bonding film is floating from the dicing tape in a state in which the expansion is canceled (ratio of the floating area of the semiconductor chip with the die-bonding film to the total area of the die-bonding film as 100%) was observed with a microscope. When the floating area was less than 30%, it was evaluated as ◯, and when it was 30% or more, it was evaluated as x. The evaluation results are shown in the column of "floating during cool expansion" in Table 1.

(Float during normal temperature expansion)
After evaluating the float during the above cool expansion, a die separator (trade name “DDS2300”, manufactured by Disco Co., Ltd.) was used in the heat expander unit at room temperature, an expansion speed of 1 mm / second, and an expansion amount of 7 mm. did the expansion. Then, while maintaining the expanded state, the dicing tape was thermally shrunk around the outer peripheral portion of the semiconductor chip at a heating temperature of 200° C., an air volume of 40 L/min, a heating distance of 20 mm, and a rotation speed of 5°/sec. Then, the area of the part where the die-bonding film is floating from the dicing tape in that state (ratio of the floating area of the semiconductor chip with the die-bonding film when the area of the whole die-bonding film is taken as 100%) is observed with a microscope, The case where the floating area was less than 30% was evaluated as ◯, and the case where it was 30% or more was evaluated as x. The evaluation results are shown in the column of "Float during normal temperature expansion" in Table 1.

(Float over time after normal temperature expansion)
In the evaluation at the time of expansion at normal temperature, after 3 hours from heat shrinking the dicing tape, the area of the part where the die bond film is floating from the dicing tape (with the die bond film floating when the area of the whole die bond film is taken as 100% The ratio of the area of the semiconductor chip) was observed with a microscope, and the case where the floating area was less than 30% was evaluated as ◯, and the case where it was 30% or more was evaluated as x. The evaluation results are shown in the column of "floating over time" in Table 1.

(Pickup aptitude)
After evaluating the float during the normal temperature expansion, using the product name "Die Bonder SPA-300" (manufactured by Shinkawa Co., Ltd.), the thrust speed was 1 mm / sec, the thrust amount was 500 μm, the number of pins was 5, and 50 pins were used. We attempted to pick up a semiconductor chip with a die-bonding film. Then, the case where all 50 pieces could be picked up was evaluated as ◯, and the case where even one piece could not be picked up or the case where floating had already occurred was evaluated as x. The evaluation results are shown in the "pickup suitability" column of Table 1.

(Suitable for die bonding)
Using "Die Bonder SPA-300" (manufactured by Shinkawa Co., Ltd.), bonding was performed to a 15 mm × 15 mm mirror chip under the conditions of a stage temperature of 120 ° C., a die bonding load of 1000 gf, and a die bonding time of 1 second. confirmed. The observation was performed using an ultrasonic imaging device (trade name “FS200II”, manufactured by Hitachi Finetech Co., Ltd.). The area occupied by the float in the observed image was calculated using binarization software (WinRoof ver.5.6). When the area occupied by the voids was less than 5% of the surface area of the adhesive sheet, it was judged as "good", and when it was 5% or more, it was judged as "poor". The evaluation results are shown in the column of "suitability for die bonding" in Table 1.

(Suitable for wire bonding)
A wafer for dicing having a thickness of 30 μm was obtained by grinding a wafer having one side vapor-deposited with aluminum. A wafer for dicing was attached to the dicing die-bonding films obtained in Examples and Comparative Examples, and then diced into 10 mm squares to obtain chips with a die-bonding film. The die-bonding film-attached chip was die-attached onto a Cu lead frame under conditions of 120° C., 0.1 MPa, and 1 sec. Five Au wires with a wire diameter of 18 μm were bonded to one chip using a wire bonding apparatus (Maxum Plus manufactured by K&S). An Au wire was driven into a Cu lead frame under conditions of an output of 80 Amp, a time of 10 ms and a load of 50 g. An Au wire was driven into the chip under the conditions of 150° C., 125 Amp output, 10 ms time, and 80 g load. A case where one or more of the five Au wires could not be bonded to the chip was evaluated as x, and a case where five of the five Au wires could be bonded to the chip was evaluated as ◯. The evaluation results are shown in the column of "suitable for wire bonding" in Table 1.

(reflow suitability)
The die-bonding films obtained in Examples and Comparative Examples were attached to a semiconductor element of 9.5 mm × 9.5 mm and 200 µm thick at 70 ° C., and mounted on a lead frame at 120 ° C., 0.1 MPa for 1 second. , heat treatment at 175° C.×1 hour (pressurization 7 kg/cm ² ) in a pressure dryer, and then a molding process using a sealing resin was performed. Thereafter, the sample was subjected to moisture absorption at 85°C/60% RH x 168h, and passed through an IR reflow furnace set to maintain this temperature at 260°C or higher for 30 seconds. FS200II manufactured by Finetech Co., Ltd.) was used to observe 9 chips to see if delamination occurred at the interface between the chip and the substrate, and the probability of delamination was calculated. Nine samples were evaluated, and ◯ was given when none of the samples were peeled off, and x was given when even one sample was found to be peeled off. The evaluation results are shown in the column of "reflow suitability" in Table 1.

REFERENCE SIGNS LIST 1 dicing die bond film 10 dicing tape 11 base material 12 adhesive layer 20, 21 die bond film W, 30A semiconductor wafer 30B semiconductor wafer division 30a division groove 30b modified region 31 semiconductor chip

Claims (4)

A dicing tape having a substrate and an adhesive layer laminated on the substrate;
a die bond film laminated on the adhesive layer of the dicing tape,
The die-bonding film has a storage elastic modulus E′ of 3.2 to 5 GPa at 25° C. measured at a frequency of 10 Hz,
A dicing die-bonding film, wherein the storage elastic modulus E′ of the die-bonding film at −15° C. measured at a frequency of 10 Hz is 4 to 7 GPa. The die-bonding film exhibits a storage elastic modulus E′ of 20 to 200 MPa at 150° C. measured at a frequency of 10 Hz after heat curing, and a storage elastic modulus E at 250° C. measured at a frequency of 10 Hz. The dicing die-bonding film according to claim 1, which exhibits '20 to 200 MPa. 3. The dicing die-bonding film according to claim 1, wherein the die-bonding film has a storage elastic modulus G' of 0.03 to 0.7 MPa at 130° C. measured at a frequency of 1 Hz. 3. The dicing die-bonding film according to claim 1, wherein said die-bonding film has a loss elastic modulus G″ of 0.01 to 0.1 MPa at 130° C. measured at a frequency of 1 Hz.

Images