CN118613558A - Film-like adhesive, dicing die-bonding integrated film, and semiconductor device and method for manufacturing same - Google Patents
Film-like adhesive, dicing die-bonding integrated film, and semiconductor device and method for manufacturing same Download PDFInfo
- Publication number
- CN118613558A CN118613558A CN202280090203.7A CN202280090203A CN118613558A CN 118613558 A CN118613558 A CN 118613558A CN 202280090203 A CN202280090203 A CN 202280090203A CN 118613558 A CN118613558 A CN 118613558A
- Authority
- CN
- China
- Prior art keywords
- film
- adhesive
- component
- mass
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 172
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 172
- 239000004065 semiconductor Substances 0.000 title claims description 195
- 238000000034 method Methods 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229920005989 resin Polymers 0.000 claims abstract description 48
- 239000011347 resin Substances 0.000 claims abstract description 48
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 38
- 229920001971 elastomer Polymers 0.000 claims abstract description 28
- 239000000806 elastomer Substances 0.000 claims abstract description 25
- 239000011256 inorganic filler Substances 0.000 claims abstract description 15
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 15
- 239000003822 epoxy resin Substances 0.000 claims description 44
- 229920000647 polyepoxide Polymers 0.000 claims description 44
- 239000010410 layer Substances 0.000 claims description 34
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 7
- 125000001624 naphthyl group Chemical group 0.000 claims description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 5
- 230000015654 memory Effects 0.000 claims description 5
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- 239000005007 epoxy-phenolic resin Substances 0.000 claims 1
- 238000001723 curing Methods 0.000 description 35
- 238000003860 storage Methods 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 15
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 14
- 238000007789 sealing Methods 0.000 description 14
- 239000002966 varnish Substances 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 10
- -1 acryl Chemical group 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000000470 constituent Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 8
- 239000005011 phenolic resin Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 3
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101710121996 Hexon protein p72 Proteins 0.000 description 1
- 101710125418 Major capsid protein Proteins 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N p-dimethylbenzene Natural products CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The invention discloses a membranous adhesive. The film-like adhesive contains a thermosetting resin component, an elastomer, and an inorganic filler. The total content of the thermosetting resin component and the elastomer is 58 mass% or more based on the total amount of the thermosetting resin component, the elastomer and the inorganic filler. The mass ratio of the thermosetting resin component to the elastomer is 1.3 or more.
Description
Technical Field
The present invention relates to a film-like adhesive, a dicing die-bonding integrated film, a semiconductor device, and a method for manufacturing the same.
Background
In recent years, stacked MCP (Multi CHIP PACKAGE: multi-chip package) in which semiconductor chips are stacked in layers has been popular, and has been mounted as a memory semiconductor package for a mobile phone or a portable audio device. Further, along with the multifunction of mobile phones and the like, the speed, density, integration and the like of semiconductor packages have been advanced.
Conventionally, as a method for manufacturing a semiconductor device, a semiconductor wafer back surface attaching method is generally used, in which a dicing die bonding integrated film including an adhesive layer and a pressure-sensitive adhesive layer is attached to the back surface of a semiconductor wafer, and then a part of the semiconductor wafer, the adhesive layer, and the pressure-sensitive adhesive layer is diced to be singulated. For example, patent documents 1 and 2 disclose film-like adhesives for the adhesive layer of this type.
Technical literature of the prior art
Patent literature
Patent document 1: international publication No. 2013/133275
Patent document 2: international publication No. 2020/013250
Disclosure of Invention
Technical problem to be solved by the invention
In stacked MCP, since semiconductor chips are stacked in multiple layers, film-like adhesives used are required to be thin (for example, thickness of 20 μm or less). Meanwhile, the film-like adhesive of the film is required to have fracture resistance that does not fracture in a processing step (for example, winding up the film-like adhesive itself peeled off from the support film).
In addition, in the stacked MCP, when the semiconductor chips are connected by wire bonding, a problem of wire bonding failure may occur. This is presumably because, due to thinning of the semiconductor chip and an increase in the number of circuit layers inside the semiconductor chip, the semiconductor chip becomes fragile, and a bonding failure or a chip crack due to vibration at the time of wire bonding occurs. In order to suppress such wire bonding failure, it is required that the film-like adhesive used for dicing die-bonding integrated films has a sufficiently high storage modulus at high temperature after curing (for example, a storage modulus at 150 ℃ after curing of 100MPa or more).
Accordingly, a main object of the present invention is to provide a film-like adhesive which is excellent in fracture resistance and sufficiently high in storage modulus at high temperature after curing.
Means for solving the technical problems
One aspect of the present invention relates to a film-like adhesive. The film-like adhesive contains a thermosetting resin component, an elastomer, and an inorganic filler. The total content of the thermosetting resin component and the elastomer is 58 mass% or more based on the total amount of the thermosetting resin component, the elastomer and the inorganic filler. The mass ratio of the thermosetting resin component to the elastomer is 1.3 or more. In the film-like adhesive, when the total content of the thermosetting resin component and the elastomer is 58 mass% or more based on the total amount of the thermosetting resin component, the elastomer, and the inorganic filler, fracture resistance tends to be excellent. In addition, in the film-like adhesive, when the mass ratio of the thermosetting resin component to the elastomer is 1.3 or more, the high-temperature storage modulus after curing tends to be sufficiently high. The total content of the thermosetting resin component and the elastomer may be 95 mass% or less based on the total amount of the thermosetting resin component, the elastomer, and the inorganic filler. The mass ratio of the thermosetting resin component to the elastomer may be 4.0 or less.
The average particle diameter of the inorganic filler may be 0.35 μm or less from the viewpoint of both fracture resistance and high-temperature storage modulus after curing.
The thermosetting resin component may be an epoxy resin or a phenolic resin. The thermosetting resin component may also contain an epoxy resin having a naphthalene skeleton as the epoxy resin. In this case, the content of the epoxy resin having a naphthalene skeleton may be 20 to 80 mass% based on the total amount of the epoxy resin contained in the thermosetting resin component.
The film-like adhesive may further contain a curing accelerator.
The thickness of the film-like adhesive may be 20 μm or less.
Film-like adhesives can be used in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked. The semiconductor device may be a three-dimensional NAND memory.
Another aspect of the invention relates to a dicing die bonding integral type film. The dicing die-bonding integrated film includes, in order, a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer formed of the film-like adhesive.
Another aspect of the invention relates to a semiconductor device. The semiconductor device includes: a semiconductor chip; a support member on which a semiconductor chip is mounted; and the cured product of the film-shaped adhesive is arranged between the semiconductor chip and the supporting component, and is used for bonding the semiconductor chip and the supporting component. The semiconductor device may further include another semiconductor chip stacked on the surface of the semiconductor chip.
Another aspect of the invention relates to a method of manufacturing a semiconductor device. The method for manufacturing the semiconductor device comprises the following steps: attaching the adhesive layer of the dicing die bonding integrated film to a semiconductor wafer; a step of manufacturing a plurality of singulated semiconductor chips with adhesive sheets by dicing the semiconductor wafer with the adhesive layer attached thereto; and a step of adhering the semiconductor chip with the adhesive sheet to the supporting member via the adhesive sheet. The method for manufacturing a semiconductor device may further include a step of adhering another semiconductor chip with an adhesive sheet to a surface of the semiconductor chip adhered to the supporting member via the adhesive sheet.
Effects of the invention
According to the present invention, there is provided a film-like adhesive which is excellent in fracture resistance and sufficiently high in storage modulus at high temperature after curing. Further, according to the present invention, there are provided a dicing die-bonding integrated film and a semiconductor device using the film-like adhesive. Further, according to the present invention, there is provided a method for manufacturing a semiconductor device in which an integrated film is bonded using such a dicing die.
Drawings
Fig. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive.
Fig. 2 is a schematic cross-sectional view showing an embodiment of a dicing die-bonding integrated film.
Fig. 3 is a schematic cross-sectional view showing an embodiment of the semiconductor device.
Fig. 4 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
Fig. 5 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps) are not necessarily required unless otherwise specifically indicated. The sizes of the constituent elements in the drawings are conceptual, and the relative relationship of the sizes of the constituent elements is not limited to the relationship shown in the drawings.
The numerical values and ranges thereof are the same in the present invention, and the present invention is not limited thereto. In the present specification, the numerical range indicated by "to" is used to indicate a range in which numerical values before and after "to" are included as a minimum value and a maximum value, respectively. In the numerical ranges described in the present specification in stages, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of the other numerical range described in stages. In addition, the upper limit value or the lower limit value of the numerical range described in the present specification may be replaced with the value shown in the examples. The upper limit value and the lower limit value described individually can be arbitrarily combined. The "a or B" may include either one of a and B, or both of them. Also, unless otherwise indicated, 1 or 2 or more materials exemplified below may be used alone or in combination. In the case where a plurality of substances conforming to each component are present in the composition, the content of each component in the composition means the total amount of the plurality of substances present in the composition unless otherwise indicated.
In the present specification, (meth) acrylate means acrylate or methacrylate corresponding thereto. Other similar expressions for the (meth) acryl, (meth) acrylic copolymer and the like are also the same.
[ Film-like adhesive ]
Fig. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive. The film-like adhesive 1 (adhesive film) shown in fig. 1 contains a thermosetting resin component (hereinafter, sometimes referred to as "(a) component"), an elastomer (hereinafter, sometimes referred to as "(B) component"), and an inorganic filler (hereinafter, sometimes referred to as "(C) component"). The film-like adhesive 1 may further contain, in addition to the component (a), the component (B), and the component (C), a curing accelerator (hereinafter, sometimes referred to as a "(D") component "), a coupling agent (hereinafter, sometimes referred to as a" (E ") component"), and other components. The film-like adhesive 1 may have thermosetting properties, may be in a semi-cured (B-stage) state, and may be in a fully cured (C-stage) state after the curing treatment.
(A) The components are as follows: thermosetting resin component
(A) The component may be, for example, a component composed of a combination of a thermosetting resin and a curing agent for the thermosetting resin. The thermosetting resin may be an epoxy resin (hereinafter, sometimes referred to as "(A1) component"). The curing agent of the thermosetting resin may be a phenolic resin (hereinafter, sometimes referred to as "(A2) component") which can function as the curing agent of the epoxy resin. That is, the component (a) may be a combination of the component (A1) and the component (A2).
(A1) The components are as follows: epoxy resin
(A1) The component (a) may be used without particular limitation as long as it has an epoxy group in the molecule. The component (A1) may contain an epoxy resin having a naphthalene skeleton (hereinafter, sometimes referred to as "component (A1 a)") from the viewpoint of more sufficiently improving the storage modulus at high temperature after curing of the film-like adhesive. The component (A1 a) may be an epoxy resin having an epoxy group having 4 or more functions.
Examples of the commercial products of the component (A1 a) include HP-4700, HP-4710, HP-4770 (trade names, manufactured by DIC Corporation), NC-7000-L, NC-7300-L (trade names, manufactured by Nippon Kayaku CO., LTD.).
The component (A1 a) may contain, for example, an epoxy resin represented by the following formula (X).
The softening point of the component (A1 a) may be 30 ℃ or higher from the viewpoint of more sufficiently improving the storage modulus at high temperature after curing of the film-like adhesive. The softening point of the component (A1 a) may be 40℃or more, 80℃or more, or 90℃or more, or 120℃or less, 110℃or less, or 100℃or less.
The epoxy equivalent of the component (A1 a) is not particularly limited, and may be 10 to 600g/eq, 100 to 500g/eq, or 120 to 450g/eq. When the epoxy equivalent of the component (A1 a) is within such a range, better reactivity and fluidity tend to be obtained.
The content of the component (A1 a) may be 20 to 80% by mass based on the total amount of the component (A1) from the viewpoint of more sufficiently improving the storage modulus at high temperature after curing in the film-like adhesive. The content of the component (A1 a) may be 25 mass% or more, 30 mass% or more, 35 mass% or more, 40 mass% or more, 45 mass% or more, 50 mass% or more, or 55 mass% or more, or 75 mass% or less, 70 mass% or less, or 65 mass% or less, based on the total amount of the component (A1).
The content of the component (A1 a) may be 10 to 50% by mass based on the total amount of the component (A1) and the component (A2) (or the total amount of the component (a)) from the viewpoint of more sufficiently improving the storage modulus at high temperature after curing in the film-like adhesive. The content of the component (A1 a) may be 15 mass% or more, 20 mass% or more, 25 mass% or more, 30 mass% or more, or 35 mass% or more, or 48 mass% or less, 45 mass% or less, or 42 mass% or less based on the total amount of the component (A1) and the component (A2) (or the total amount of the component (a)).
(A1) The component (A1 a) may contain an epoxy resin having no naphthalene skeleton (hereinafter, may be referred to as "component (A1 b)") in addition to the component (A1 a). Examples of the component (A1 b) include bisphenol a type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol a novolac type epoxy resin, bisphenol F novolac type epoxy resin, stilbene type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene (xylene) type epoxy resin, phenylaryl type epoxy resin, biphenyl aralkyl (biphenyl aralkyl) type epoxy resin, polyfunctional phenols, and polycyclic aromatic (excluding naphthalene) diglycidyl ether compounds such as anthracene. The component (A1 b) may be, for example, a bisphenol type epoxy resin or a bisphenol F type epoxy resin.
The epoxy equivalent of the component (A1 b) is not particularly limited, and may be 90 to 600g/eq, 100 to 500g/eq, or 120 to 450g/eq. When the epoxy equivalent of the component (A-2) is within such a range, better reactivity and fluidity tend to be obtained.
The content of the component (A1 b) may be 20 to 80% by mass based on the total amount of the component (A1). The content of the component (A1 b) may be 25 mass% or more, 30 mass% or more, or 35 mass% or more, or 75 mass% or less, 70 mass% or less, 65 mass% or less, 60 mass% or less, 55 mass% or less, 50 mass% or less, or 45 mass% or less, based on the total amount of the component (A1).
(A1) The content of the component (A) may be 10 to 50% by mass based on the total amount of the component (B) and the component (C). The content of the component (a) may be 15 mass% or more, 20 mass% or more, 25 mass% or more, or 30 mass% or more, or 45 mass% or less, 42 mass% or less, or 40 mass% or less based on the total amount of the component (a), the component (B), and the component (C).
(A2) The components are as follows: phenolic resin
(A2) The component (a) may be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the component (A2) include novolak type phenol resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol a, bisphenol F, phenylphenol, aminophenol and the like and/or naphthols such as α -naphthol, β -naphthol, dihydroxynaphthalene and the like with a compound having an aldehyde group such as formaldehyde and the like in the presence of an acidic catalyst, phenol aralkyl resins such as allylated bisphenol a, allylated bisphenol F, allylated naphthalene diol, phenol novolak, phenol and the like and/or phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl type phenol resins, phenyl aralkyl type phenol resins and the like synthesized from phenols and/or naphthols and dimethoxy para-xylene or bis (methoxymethyl) biphenyl. These may be used singly or in combination of 2 or more. The component (A2) may be a novolac type phenol resin.
Examples of the commercial products of the component (A2) include RESITOP series (Gun EI CHEMICAL Industry co., ltd. Manufactured), PHENOLITE KA series, TD series (manufactured by DIC Corporation), milex XLC series, XL series (manufactured by Mitsui Chemicals, inc. Manufactured), and HE series (manufactured by AIR WATER inc. Manufactured).
(A2) The hydroxyl equivalent of the component (A) is not particularly limited and may be 80 to 400g/eq, 90 to 350g/eq, or 100 to 300g/eq. When the hydroxyl equivalent of the component (A2) is within such a range, better reactivity and fluidity tend to be obtained.
From the viewpoint of curability, the ratio of the epoxy equivalent of the component (A1) to the hydroxyl equivalent of the component (A2) ((epoxy equivalent of the component (A1)/(hydroxyl equivalent of the component (A2)) may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45. When the equivalent ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming excessively high, and more sufficient fluidity can be obtained.
(A2) The content of the component (A), the component (B) and the component (C) may be 5 to 30% by mass based on the total amount of the components. (A2) The content of the component (a), the component (B) and the component (C) may be 8 mass% or more, 10 mass% or more, or 12 mass% or more, 28 mass% or less, 25 mass% or less, or 22 mass% or less based on the total amount of the components.
(B) The components are as follows: elastic body
Examples of the component (B) include an acrylic resin, a polyester resin, a polyamide resin, a polyimide resin, a silicone resin, and a butadiene resin; modified products of these resins, and the like. These may be used singly or in combination of 2 or more. Among them, the component (B) may be an acrylic resin (acrylate rubber) having a constituent unit derived from (meth) acrylic acid ester as a main component, in terms of less ionic impurities, more excellent heat resistance, more easy securing of connection reliability of the semiconductor device, and more excellent fluidity. (B) The content of the constituent unit derived from the (meth) acrylic acid ester in the component (a) may be, for example, 70 mass% or more, 80 mass% or more, or 90 mass% or more based on the total amount of the constituent units. The acrylic resin (acrylate rubber) may include a constituent unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group.
(B) The glass transition temperature (Tg) of the component may be-50 to 50℃or-30 to 30 ℃. If the Tg of the component (B) is-50℃or higher, the flexibility of the film-like adhesive tends to be prevented from becoming too high. Thus, the film-like adhesive is easily cut at the time of dicing the wafer, and burrs can be prevented from being generated. If the Tg of the component (B) is 50℃or lower, the decrease in flexibility of the film-like adhesive tends to be suppressed. Thus, when the film-like adhesive is attached to the semiconductor wafer, the voids tend to be easily and sufficiently buried. Further, peeling at dicing due to a decrease in adhesion of the semiconductor wafer can be prevented. The glass transition temperature (Tg) herein refers to a value measured using a DSC (differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation). By adjusting the type and content of the constituent unit constituting the component (B) (when the component (B) is an acrylic resin (acrylate rubber), the Tg of the component (B) can be adjusted to a desired range.
(B) The weight average molecular weight (Mw) of the components may be 10 to 300 or 20 to 100. When the Mw of the component (B) is within such a range, film formability, film strength, flexibility, tackiness, etc. can be appropriately controlled, and the reflow property is excellent, so that the embeddability can be improved. Here, mw refers to a value obtained by performing measurement by Gel Permeation Chromatography (GPC) and converting a calibration curve based on standard polystyrene.
Commercially available products of component (B) include SG-70L、SG-708-6、WS-023EK30、SG-P3、SG-280EK23、SG-80H、HTR-860P、HTR-860P-3、HTR-860P-3CSP、HTR-860P-3CSP-3DB、HTR-860P-30B(, which are all manufactured by Nagase ChemteX corporation).
(B) The content of the component (A) may be 5 to 50% by mass based on the total amount of the component (B) and the component (C). In the film-like adhesive, the content of the component (B) is 5 mass% or more based on the total amount of the component (a), the component (B) and the component (C), and the fracture resistance tends to be more excellent, and the high-temperature storage modulus after curing tends to be sufficiently high if the content is 50 mass% or less. (B) The content of the component (a), the component (B) and the component (C) may be 10 mass% or more, 15 mass% or more, 20 mass% or more, or 25 mass% or more, 45 mass% or less, 40 mass% or less, or 35 mass% or less based on the total amount of the components.
The total content of the component (A) and the component (B) is 58% by mass or more based on the total amount of the component (A), the component (B) and the component (C). When the total content of the component (a) and the component (B) is 58 mass% or more based on the total amount of the component (a), the component (B) and the component (C), fracture resistance tends to be excellent. The total content of the component (a) and the component (B) may be 60 mass% or more, 65 mass% or more, 70 mass% or more, or 75 mass% or more based on the total amount of the component (a), the component (B), and the component (C). The total content of the component (a) and the component (B) may be 95 mass% or less, 92 mass% or less, or 90 mass% or less based on the total amount of the component (a), the component (B) and the component (C). When the total content of the component (a) and the component (B) is 95 mass% or less based on the total amount of the component (a), the high-temperature storage modulus after curing tends to be sufficiently high.
(A) The mass ratio of the component (A) to the component (B) (the mass of the component (A)/the mass of the component (B)) is 1.3 or more. In the film-like adhesive, when the mass ratio of the component (a) to the component (B) is 1.3 or more, the storage modulus at high temperature after curing tends to be sufficiently high. (A) The mass ratio of the component (A) to the component (B) may be 1.4 or more, 1.5 or more, 1.6 or more, or 1.7 or more. (A) The mass ratio of the component (a) to the component (B) may be, for example, 4.0 or less, 3.5 or less, 3.0 or less, 2.5 or less, or 2.0 or less.
(C) The components are as follows: inorganic filler
Examples of the component (C) include fillers composed of aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, and the like. The component (C) may be a filler composed of silica (crystalline silica or amorphous silica).
The average particle diameter of the component (C) may be 0.35 μm or less from the viewpoint of both fracture resistance and high-temperature storage modulus after curing. (C) The average particle size of the components may be 0.30 μm or less, 0.25 μm or less, or 0.20 μm or less. (C) The lower limit of the average particle diameter of the component (A) may be, for example, 0.01 μm or more, 0.03 μm or more, or 0.05 μm or more. The average particle diameter of the component (C) can be determined by the following method. First, the component (C) is dispersed in a solvent to prepare a dispersion liquid. Next, a dynamic light scattering method was applied to the prepared dispersion to obtain a particle size distribution. Then, the average particle diameter of the component (C) can be obtained from the obtained particle size distribution. The average particle diameter of the component (C) can be obtained from a film-like adhesive containing the component (C). In this case, a dispersion is prepared by dispersing a residue obtained by decomposing a resin component by heating a film-like binder in a solvent. Next, a dynamic light scattering method was applied to the prepared dispersion to obtain a particle size distribution. Then, the average particle diameter of the component (C) can be obtained from the obtained particle size distribution.
From the viewpoints of compatibility of the surface thereof with solvents, other components, and the like, and adhesive strength, the component (C) may be subjected to surface treatment with a surface treatment agent. Examples of the surface treatment agent include a silane coupling agent. Examples of the functional group of the silane coupling agent include a vinyl group, a (meth) acryl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, and an ethoxy group.
(C) The content of the component (A) may be 5 to 60% by mass based on the total amount of the component (B) and the component (C). In the film-like adhesive, the content of the component (C) is 5 mass% or more based on the total amount of the component (a), the component (B) and the component (C), and the high-temperature storage modulus after curing tends to be sufficiently high, and the fracture resistance tends to be further excellent if the content is 60 mass% or less. (C) The content of the component (a), the component (B) and the component (C) may be 8 mass% or more or 10 mass% or more, or 50 mass% or less, 45 mass% or less, 40 mass% or less, 35 mass% or less, 30 mass% or less, or 25 mass% or less, based on the total amount of the components.
(D) The components are as follows: curing accelerator
The film-like adhesive may further contain a component (D). The film-like adhesive contains the component (D), and thus the adhesive property and the connection reliability tend to be further compatible. Examples of the component (D) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. These may be used singly or in combination of 2 or more. Among them, the component (D) may be imidazoles or derivatives thereof from the viewpoint of reactivity.
Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used singly or in combination of 2 or more.
(D) The ratio of the equivalent of the reactive group of the component to the equivalent of the hydroxyl group of the component (A2) ((equivalent of the reactive group of the component/(equivalent of the hydroxyl group of the component A2)) may be, for example, 0.1 to 2.0, 0.2 to 1.8, 0.25 to 1.5, or 0.3 to 1.3.
(D) The content of the component (A), the component (B) and the component (C) may be 0.01 to 1.0% by mass based on the total amount of the components.
(E) The components are as follows: coupling agent
The composition may further contain a component (E). The film-like adhesive contains the component (E), and thus the interfacial bonding between the dissimilar components tends to be further improved. Examples of the component (E) include a silane coupling agent, a titanate coupling agent, and an aluminum coupling agent. Wherein, the component (E) can be a silane coupling agent.
Examples of the silane-based coupling agent include γ -ureidopropyltriethoxysilane, γ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) aminopropyltrimethoxysilane.
(E) The content of the component (A), the component (B) and the component (C) may be 0.1 to 5.0% by mass based on the total amount of the components.
Other component the film-like adhesive may further contain an antioxidant, a rheology modifier, a leveling agent, a pigment, an ion scavenger, an antioxidant, and the like as other components. The content of the other component(s) may be 0.01 to 3% by mass based on the total amount of the component (a), the component (B) and the component (C).
The thickness of the film-like adhesive 1 may be 20 μm or less, 18 μm or less, 15 μm or less, 12 μm or less, or 10 μm or less. The lower limit of the thickness of the film-like adhesive 1 is not particularly limited, and may be, for example, 1 μm or more.
The storage modulus (high temperature storage modulus after curing) of the cured product of the film-like adhesive 1 at 150 ℃ may be, for example, 100MPa or more, or 110MPa or more or 120MPa or more. Here, the cured product of the film-like adhesive 1 means a cured product obtained by heating the film-like adhesive 1 at 150 ℃ for 50 minutes. When the high-temperature storage modulus of the film-like adhesive after curing is 100MPa or more, bonding failure or chip cracking due to vibration at the time of wire bonding can be suppressed. The high-temperature storage modulus of the film-like adhesive after curing may be, for example, 500MPa or less, 300MPa or less, 200MPa or less, or 180MPa or less. In the present specification, the high-temperature storage modulus after curing of the film-like adhesive can be measured by the method described in examples.
The film-like adhesive 1 (adhesive film) shown in fig. 1 is an adhesive obtained by molding an adhesive composition containing a component (a), a component (B), a component (C), and optionally a component ((D), a component (E), and other components) into a film. The film-like adhesive 1 can be formed, for example, by applying an adhesive composition onto a support film. In the formation of the film-like adhesive 1, a varnish of the adhesive composition (adhesive varnish) may also be used. In the case of using an adhesive varnish, the adhesive varnish can be prepared by mixing or kneading the component (a), the component (B), and the component (C), and the component ((D), the component (E), the other component, and the like) added as needed in a solvent, and the obtained adhesive varnish is applied to a support film, and the solvent is removed by heat drying, thereby obtaining the film-like adhesive 1.
The support film is not particularly limited as long as it can withstand the above-mentioned heat drying, and may be, for example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyethylene naphthalate film, a polymethylpentene film, or the like. The support film may be a multilayer film in which 2 or more kinds are combined, or may be a film in which the surface is treated with a release agent such as silicone-based or silica-based. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.
The mixing or kneading can be performed by using a general stirrer, a mill, a three-roll mill, a ball mill, or other dispersing machine, and by appropriately combining these.
The solvent used for preparing the adhesive varnish is not limited as long as each component can be uniformly dissolved, kneaded, or dispersed, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. The solvent may be methyl ethyl ketone or cyclohexanone from the viewpoint of drying speed and price.
As a method of applying the adhesive varnish to the support film, a known method can be used, and for example, a doctor blade method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, or the like can be used. The heating and drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, and may be carried out at 50 to 150℃for 1 to 30 minutes.
The film-like adhesive 1 can be thinned, and therefore can be preferably used in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked. In this case, the semiconductor device may be a stacked MCP, or may be a three-dimensional NAND-type memory.
[ Dicing die bonding integral film ]
Fig. 2 is a schematic cross-sectional view showing an embodiment of a dicing die-bonding integrated film. The dicing die-bonding integrated film 10 shown in fig. 2 includes, in order, a base material layer 2, a pressure-sensitive adhesive layer 3, and an adhesive layer 1A formed of the film-like adhesive 1. The base material layer 2 and the pressure-sensitive adhesive layer 3 may be dicing tapes 4. When the dicing die bonding integrated film 10 is used, the lamination process of the semiconductor wafer is 1 time, and therefore, the efficiency of the operation can be improved. The dicing die bonding integrated film may be film-like, sheet-like, strip-like, or the like.
The dicing tape 4 includes a base material layer 2 and a pressure-sensitive adhesive layer 3 provided on the base material layer 2.
Examples of the base material layer 2 include plastic films such as polytetrafluoroethylene films, polyethylene terephthalate films, polyethylene films, polypropylene films, polymethylpentene films, and polyimide films. The substrate layer 2 may be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, as required.
The pressure-sensitive adhesive layer 3 is a layer formed of a pressure-sensitive adhesive. The pressure-sensitive adhesive is not particularly limited as long as it has a sufficient adhesive force that the semiconductor chip does not fly during dicing and has a low adhesive force to such an extent that the semiconductor chip is not damaged in the subsequent step of picking up the semiconductor chip, and conventionally known pressure-sensitive adhesives can be used in the field of dicing tapes. The pressure-sensitive adhesive may be either a pressure-sensitive type or a radiation-curable type. The pressure-sensitive adhesive is a pressure-sensitive adhesive that exhibits constant tackiness under pressure for a short period of time. On the other hand, the radiation curable pressure-sensitive adhesive is a pressure-sensitive adhesive having a property of decreasing tackiness by irradiation of radiation (for example, ultraviolet rays).
The thickness of the dicing tape 4 (the base material layer 2 and the pressure-sensitive adhesive layer 3) may be 60 to 150 μm or 70 to 130 μm from the viewpoints of economy and film operability.
The dicing die bonding integrated film 10 can be obtained, for example, by preparing the film-like adhesive 1 and the dicing tape 4, and bonding the film-like adhesive 1 to the pressure-sensitive adhesive layer 3 of the dicing tape 4. Further, regarding the dicing die-bonding integrated film 10, for example, it can also be obtained by preparing the dicing tape 4 and applying an adhesive composition (adhesive varnish) on the pressure-sensitive adhesive layer 3 of the dicing tape 4 in the same manner as the method of forming the above-described film-like adhesive 1.
In the case of bonding the pressure-sensitive adhesive layer 3 of the film-like adhesive 1 and the dicing tape 4, the dicing die-bonding integrated film 10 can be formed by laminating the film-like adhesive 1 on the dicing tape 4 under a predetermined condition (for example, room temperature (20 ℃) or a heated state) using a roll laminator, a vacuum laminator, or the like. The dicing die bonding-integrated film 10 can be continuously produced and is excellent in efficiency, and therefore can be formed in a heated state by using a roll laminator.
The film-like adhesive and dicing die-bonding integrated film can be used in a process for manufacturing a semiconductor device, or in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked. The film-like adhesive and dicing die-bonding integrated film can be used for manufacturing a semiconductor device including: bonding a film-like adhesive or dicing die-bonding adhesive layer of an integrated film to a semiconductor wafer or singulated semiconductor chips at 0 to 90 ℃ to obtain adhesive-sheet-attached semiconductor chips by dicing with a rotary knife, laser, or stretching; and a step of adhering the semiconductor chip with the adhesive sheet to a supporting member or other semiconductor chip via the adhesive sheet.
Film-like adhesive can be preferably used as an adhesive for bonding semiconductor chips to each other also in stacked MCPs (for example, three-dimensional NAND-type memories) which are semiconductor devices in which a plurality of semiconductor chips are stacked.
The film-like adhesive can also be used as, for example, a protective sheet for protecting the back surface of a semiconductor chip of a flip-chip type semiconductor device, a sealing sheet for sealing between the surface of the semiconductor chip of the flip-chip type semiconductor device and an adherend, or the like.
Hereinafter, a semiconductor device manufactured by using a film-like adhesive and a dicing die-bonding integrated film will be specifically described with reference to the drawings. In recent years, various configurations of semiconductor devices have been proposed, and the use of the film-like adhesive and dicing die-bonding integrated film according to the present embodiment is not limited to the semiconductor devices having the configurations described below.
[ Semiconductor device ]
Fig. 3 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 100 shown in fig. 3 includes a semiconductor chip 11, a support member 12 on which the semiconductor chip 11 is mounted, and an adhesive member 15. The bonding member 15 is provided between the semiconductor chip 11 and the supporting member 12, and bonds the semiconductor chip 11 and the supporting member 12. The adhesive member 15 is a cured product of a film-like adhesive. The connection terminals (not shown) of the semiconductor chip 11 are electrically connected to external connection terminals (not shown) via leads 13, and are sealed with a sealing material 14.
Fig. 4 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the semiconductor device 110 shown in fig. 4, the semiconductor chip 11a of the first layer is bonded to the supporting member 12 on which the terminal 16 is formed by the bonding member 15a (cured product of film-like adhesive), and the semiconductor chip 11b of the second layer is further bonded to the semiconductor chip 11a of the first layer by the bonding member 15b (cured product of film-like adhesive). Connection terminals (not shown) of the semiconductor chip 11a of the first layer and the semiconductor chip 11b of the second layer are electrically connected to external connection terminals via leads 13, and are sealed with a sealing material 14. The semiconductor device 110 shown in fig. 4 may be further provided with another semiconductor chip (11 b) stacked on the surface of the semiconductor chip (11 a) in the semiconductor device 100 shown in fig. 3.
Fig. 5 is a schematic cross-sectional view showing another embodiment of the semiconductor device. The semiconductor device 120 shown in fig. 5 includes a support member 12 and semiconductor chips 11a, 11b, 11c, and 11d stacked on the support member 12. The four semiconductor chips 11a, 11b, 11c, and 11d are stacked at positions offset from each other in the lateral direction (the direction orthogonal to the stacking direction) in order to be connected to connection terminals (not shown) formed on the surface of the support member 12 (refer to fig. 5). The semiconductor chip 11a is bonded to the support member 12 by the bonding member 1a (cured product of film-like adhesive), and the bonding members 15b, 15c, 15d (cured product of film-like adhesive) are interposed between the three semiconductor chips 11b, 11c, 11d, respectively. The semiconductor device 120 shown in fig. 5 may be further provided with other semiconductor chips (11 b, 11c, 11 d) stacked on the surface of the semiconductor chip (11 a) in the semiconductor device 100 shown in fig. 3.
The semiconductor device (package) has been described in detail above with respect to the embodiment of the present invention, but the present invention is not limited to the above embodiment. For example, in fig. 5, a semiconductor device of a mode in which four semiconductor chips are stacked is illustrated, but the number of stacked semiconductor chips is not limited thereto. In fig. 5, the semiconductor device in which the semiconductor chips are stacked at positions offset from each other in the lateral direction (the direction orthogonal to the stacking direction) is illustrated, but the semiconductor device in which the semiconductor chips are stacked at positions not offset from each other in the lateral direction (the direction orthogonal to the stacking direction) may be employed.
[ Method for manufacturing semiconductor device ]
The semiconductor device (semiconductor package) shown in fig. 3, 4, and 5 can be obtained by a method including: and a step of adhering the semiconductor chip to the support member, or the 1 st semiconductor chip and the 2 nd semiconductor chip, with the film-like adhesive interposed therebetween, or between the semiconductor chip (1 st semiconductor chip) and the other semiconductor chip (2 nd semiconductor chip). More specifically, the film-like adhesive can be obtained by interposing the film-like adhesive between the semiconductor chip and the support member, or between the 1 st semiconductor chip and the 2 nd semiconductor chip, and bonding the two by thermocompression bonding, and then, if necessary, performing a wire bonding step, a sealing step by a sealing material, a heat-melting step including reflow soldering by solder, and the like.
As a method of interposing the film-like adhesive between the semiconductor chip and the support member or between the 1 st semiconductor chip and the 2 nd semiconductor chip, as described later, a method of preliminarily manufacturing the semiconductor chip with the adhesive sheet and then attaching the semiconductor chip to the support member or the semiconductor chip may be used.
Next, an embodiment of a method for manufacturing a semiconductor device is described with reference to the dicing die-bonding integrated film shown in fig. 2. The method for manufacturing the semiconductor device by bonding the integrated film with the dicing die is not limited to the method for manufacturing the semiconductor device described below.
The semiconductor device can be obtained, for example, by a method including: a step (lamination step) of attaching a semiconductor wafer to the adhesive layer of the dicing die-bonding integrated film; a step (dicing step) of manufacturing a plurality of singulated semiconductor chips with adhesive sheets by dicing the semiconductor wafer to which the adhesive layer is attached; and a step of bonding the semiconductor chip with the adhesive sheet to the supporting member via the adhesive sheet (1 st bonding step). The method for manufacturing a semiconductor device may further include a step of bonding another semiconductor chip with an adhesive sheet to the surface of the semiconductor chip bonded to the support member via the adhesive sheet (a 2 nd bonding step).
The lamination step is a step of bonding and holding the semiconductor wafer by pressure bonding to the adhesive layer 1A of the dicing die-bonding integrated film 10. The process may be performed by pressing with a pressing mechanism such as a pressure roller.
Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.
The dicing step is a step of dicing the semiconductor wafer. Thus, the semiconductor wafer can be cut into a predetermined size, and a plurality of singulated semiconductor chips with adhesive sheets can be manufactured. The dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method. In this step, for example, a method called full dicing in which dicing is performed to a dicing tape, a method in which half dicing is performed to a semiconductor wafer, and dicing is performed by cooling and stretching, or a method in which dicing is performed by laser, can be used. The cutting device used in the present step is not particularly limited, and a conventionally known device can be used.
Examples of the semiconductor chip include an IC (integrated circuit). Examples of the supporting member include a lead frame such as a 42 alloy lead frame and a copper lead frame; plastic films such as polyimide resin and epoxy resin; a modified plastic film obtained by impregnating a base material such as a glass nonwoven fabric with a plastic such as a polyimide resin or an epoxy resin and curing the same; ceramics such as alumina, and the like.
The method for manufacturing a semiconductor device may include a pickup step as needed. The pick-up step is a step of picking up the semiconductor chip with the adhesive sheet for peeling and bonding the semiconductor chip with the adhesive sheet fixed to the dicing die-bonding integrated film. The method of picking up is not particularly limited, and various methods known in the related art can be employed. As such a method, for example, a method of pushing up each adhesive sheet-attached semiconductor chip from the dicing die bonding-integrated film side by a needle, and picking up the pushed-up adhesive sheet-attached semiconductor chip by a pickup device, and the like can be cited.
Here, in the case where the pressure-sensitive adhesive layer is radiation (e.g., ultraviolet) curable, the pickup can be performed after the radiation is irradiated to the pressure-sensitive adhesive layer. Thereby, the adhesive bonding force of the pressure-sensitive adhesive layer to the adhesive sheet is reduced, and peeling of the semiconductor chip with the adhesive sheet becomes easy. As a result, the semiconductor chip with the adhesive sheet can be picked up without damaging the semiconductor chip.
The 1 st bonding step is a step of bonding the semiconductor chip with the adhesive sheet formed by dicing to a support member for mounting the semiconductor chip via the adhesive sheet. The method for manufacturing a semiconductor device may include a step of bonding another semiconductor chip with an adhesive sheet to the surface of the semiconductor chip bonded to the support member via an adhesive sheet (step 2 bonding step), if necessary. The bonding can be performed by crimping. The pressure bonding conditions are not particularly limited, and can be appropriately set as needed. The pressure bonding conditions may be, for example, a temperature of 80 to 160 ℃, a load of 5 to 15N, or a time of 1 to 10 seconds. The support member may be the same as described above.
The method for manufacturing a semiconductor device may include a step of further thermally curing the adhesive sheet (thermal curing step) as needed. The adhesive sheet to which the semiconductor chip and the supporting member, or the 1 st semiconductor chip and the 2 nd semiconductor chip are bonded is further thermally cured, whereby the adhesive sheet can be more firmly bonded and fixed. In the case of heat curing, pressure may be applied simultaneously to cure the material. The heating temperature in this step can be changed as appropriate depending on the constituent components of the adhesive sheet. The heating temperature may be, for example, 60 to 200 ℃. The temperature or pressure may be changed and applied in a stepwise manner.
The method for manufacturing a semiconductor device may include a step (wire bonding step) of electrically connecting the tip of the terminal portion (inner wire) of the support member to the electrode pad on the semiconductor chip by a bonding wire, if necessary. As the bonding wire, for example, gold wire, aluminum wire, copper wire, or the like is used. The temperature at which wire bonding is performed may be in the range of 80 to 250 ℃ or 80 to 220 ℃. The heating time may be from a few seconds to a few minutes. The wire bonding may be performed by using both ultrasonic vibration energy and pressure bonding energy by applying pressure in a state heated in the above temperature range.
The method for manufacturing a semiconductor device may include a step of sealing the semiconductor chip with a sealing material (sealing step) as necessary. This step is performed to protect the semiconductor chip or the bonding wire mounted on the support member. The step can be performed by molding a sealing resin (sealing resin) with a mold. The sealing resin may be, for example, an epoxy resin. The heat and pressure support member and the residue are buried therein at the time of sealing, whereby peeling due to air bubbles in the bonding interface can be prevented.
The method for manufacturing a semiconductor device may include a step of completely curing the sealing resin which is insufficiently cured in the sealing step (post-curing step), if necessary. In the sealing step, even when the adhesive sheet is not thermally cured, the adhesive sheet can be thermally cured and bonded and fixed at the same time as the sealing resin is cured in the present step. The heating temperature in this step can be set appropriately according to the type of the sealing resin, and may be, for example, in the range of 165 to 185 ℃, and the heating time may be about 0.5 to 8 hours.
The method for manufacturing a semiconductor device may include a step of heating the semiconductor chip with the adhesive sheet attached to the support member using a reflow furnace (a heat-melting step) as needed. In this step, the resin-sealed semiconductor device may be surface-mounted on the support member. As a surface mounting method, for example, reflow soldering in which solder is supplied onto a printed wiring board in advance and then melted by heating with warm air or the like to perform soldering is given. Examples of the heating method include hot air reflow soldering and infrared reflow soldering. The heating method may be used to heat the whole or locally. The heating temperature may be, for example, in the range of 240 to 280 ℃.
Examples
The present invention will be specifically described below based on examples, but the present invention is not limited to these examples.
[ Production of film-like adhesive ]
(Examples 1 to 4 and comparative examples 1 to 3)
< Preparation of adhesive varnish >
Cyclohexanone was added to a mixture of components (a) and (A2) and components (a) in the amounts shown in table 1 (unit: parts by mass), and stirred and mixed. To this, the component (B) was added and stirred at the components and contents (unit: parts by mass) shown in table 1, and the component (D) and the component (E) were further added and stirred until the components became uniform, whereby an adhesive varnish having a solid content of 22% by mass was prepared. The components shown in table 1 are the following components, and the values shown in table 1 are parts by mass of the solid components.
(A) The components are as follows: thermosetting resin component
(A1) The components are as follows: epoxy resin
Component (A1 a): epoxy resin with naphthalene skeleton
( A1 a-1) HP-4710 (trade name, manufactured by DIC Corporation, epoxy resin represented by the above formula (X), epoxy equivalent: 170g/eq, softening point: 95 DEG C )
Component (A1 b): epoxy resin without naphthalene skeleton
( A1 b-1) EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 160g/eq, softening point: 85 DEG C )
( A1 b-2) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 204g/eq, softening point: 75-85 DEG C )
( A1 b-3) YDF-8170C (trade name, NIPPON STEEL CHEMICAL & Material co., ltd., bisphenol F type epoxy resin, epoxy equivalent: 159g/eq, liquid at 30 DEG C )
(A2) The components are as follows: phenolic resin
( A2-1) PSM-4326 (trade name, gun EI CHEMICAL Industrial Co., ltd., phenol novolac type phenolic resin, hydroxyl equivalent: 105g/eq, softening point: 120 DEG C )
(B) The components are as follows: elastic body
( B-1) HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX corporation, acrylic rubber, glass transition point: -7 ℃, weight average molecular weight: 80 ten thousand (80) )
(C) The components are as follows: inorganic filler
( C-1) silica filler dispersion (manufactured by CIK-Nano tek. Silica filler, average particle diameter: 0.10 μm )
( C-2) K180SV-CH1 (trade name, manufactured by ADMATECHS COMPANY LIMITED, silica filler, average particle size: 0.18 μm )
( C-3) 0.3. Mu. mSE-CH1 (trade name, manufactured by ADMATECHS COMPANY LIMITED, silica filler, average particle size: 0.30 μm )
( C-4) SC2050-HLG (trade name, manufactured by ADMATECHS COMPANY LIMITED, silica filler, average particle size: 0.50 μm )
(D) The components are as follows: curing accelerator
(D-1) 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)
(D-2) 2PZ (trade name, manufactured by Shikoku Chemicals Corporation, 2-phenylimidazole)
(E) The components are as follows: coupling agent
(E-1) A-189 (trade name, manufactured by Nippon Unicar Company Limited, gamma-mercaptopropyl trimethoxysilane)
(E-2) A-1160 (trade name, manufactured by Nippon Unicar Company Limited, gamma-ureidopropyltriethoxysilane)
< Preparation of film-like adhesive >
As a support film, a polyethylene terephthalate (PET) film having a thickness of 38 μm and subjected to a mold release treatment was prepared, and an adhesive varnish was coated on the PET film. The applied adhesive varnish was dried by heating at 110℃for 5 minutes, to obtain a laminate comprising a support film and the film-like adhesives of examples 1 to 4 and comparative examples 1 to 3 in a B-stage state on the support film. In the film-like adhesive, the thickness of the film-like adhesive was adjusted to 10 μm by the application amount of the adhesive varnish.
[ Evaluation of film-like adhesive ]
< Evaluation of fracture resistance >
The laminate of examples 1 to 4 and comparative examples 1 to 3, which had film-like adhesives, was cut into test pieces having a length of 100mm and a width of 20 mm. An adhesive tape was attached to the end of the test piece on the film-like adhesive side. The film-like adhesive was peeled off from the support film (PET film) together with the adhesive tape, and the peeled film-like adhesive was observed. The case where the film-like adhesive can be peeled off without breaking all the way was evaluated as "a" excellent in fracture resistance, the case where it can be peeled off without breaking 8 or more was evaluated as "B", and the case where it was less than 8 was evaluated as "C". The results are shown in table 1.
< Measurement of high temperature storage modulus after curing >
The film-like adhesives of examples 1 to 4 and comparative examples 1 to 3 were used to measure the storage modulus at high temperature after curing. The storage modulus at high temperature after curing was measured by the following method. That is, a plurality of film-like adhesives having a thickness of 10 μm were laminated so that the thickness was about 160 μm, and the thickness was set to a size of 4mm in width by 33mm in length, whereby a measurement sample was produced. After the prepared sample was cured at 150℃for 50 minutes, the cured sample was set in a dynamic viscoelasticity measuring apparatus (manufactured by RheogelE-4000,UBM Corporation), and a tensile load was applied thereto, and the viscoelasticity was measured in a temperature-dependent measurement mode at a frequency of 10Hz and a heating rate of 3 ℃/min to 30 to 300℃and the value of the storage modulus at 150℃was set as the high-temperature storage modulus. The high-temperature storage modulus means that the larger the value (for example, 100MPa or more), the more wire bonding failure can be suppressed. The results are shown in table 1.
As shown in table 1, the total content of the thermosetting resin component and the elastomer was 58 mass% or more based on the total amount of the thermosetting resin component, the elastomer and the inorganic filler, and the film adhesives of examples 1 to 4 having a mass ratio of the thermosetting resin component to the elastomer of 1.3 or more were excellent in both fracture resistance and high-temperature storage modulus as compared with the film adhesives of comparative examples 1 to 3 which did not satisfy these requirements. From these results, it was confirmed that the film-like adhesive of the present invention is excellent in fracture resistance and sufficiently high in storage modulus at high temperature after curing.
Industrial applicability
According to the present invention, there is provided a film-like adhesive which is excellent in fracture resistance and sufficiently high in storage modulus at high temperature after curing. Further, according to the present invention, there are provided a dicing die-bonding integrated film and a semiconductor device using the film-like adhesive. Further, according to the present invention, there is provided a method for manufacturing a semiconductor device in which an integrated film is bonded using such a dicing die.
Symbol description
1-Film adhesive, 1A-adhesive layer, 2-base material layer, 3-pressure-sensitive adhesive layer, 4-dicing tape, 10-dicing die-bonding integrated film, 11A, 11b, 11c, 11 d-semiconductor chip, 12-support member, 13-lead, 14-sealing material, 15a, 15b, 15c, 15 d-adhesive member, 16-terminal, 100, 110, 120-semiconductor device.
Claims (16)
1. A film-like adhesive comprising a thermosetting resin component, an elastomer and an inorganic filler,
The total content of the thermosetting resin component and the elastomer is 58 mass% or more based on the total amount of the thermosetting resin component, the elastomer, and the inorganic filler,
The mass ratio of the thermosetting resin component to the elastomer is 1.3 or more.
2. The film-like adhesive according to claim 1, wherein,
The total content of the thermosetting resin component and the elastomer is 95 mass% or less based on the total amount of the thermosetting resin component, the elastomer, and the inorganic filler.
3. A film-like adhesive according to claim 1 or 2, wherein,
The mass ratio of the thermosetting resin component to the elastomer is 4.0 or less.
4. A film-like adhesive according to any one of claim 1 to 3, wherein,
The average particle diameter of the inorganic filler is less than 0.35 mu m.
5. A film-like adhesive according to any one of claims 1 to 4, wherein,
The thermosetting resin component is epoxy resin and phenolic resin.
6. The film-like adhesive according to claim 5, wherein,
The thermosetting resin component contains an epoxy resin having a naphthalene skeleton as the epoxy resin.
7. The film-like adhesive according to claim 6, wherein,
The content of the epoxy resin having the naphthalene skeleton is 20 to 80 mass% based on the total amount of the epoxy resin contained in the thermosetting resin component.
8. The film-like adhesive according to any one of claims 1 to 7, further comprising a curing accelerator.
9. The film-like adhesive according to any one of claims 1 to 8, having a thickness of 20 μm or less.
10. The film-like adhesive according to any one of claims 1 to 9, which is used in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked.
11. The film-like adhesive according to claim 10, wherein,
The semiconductor device is a three-dimensional NAND memory.
12. A dicing die-bonded integrated film comprising, in order, a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer formed of the film-like adhesive according to any one of claims 1 to 9.
13. A semiconductor device is provided with:
a semiconductor chip;
a support member on which the semiconductor chip is mounted; and
The cured product of the film-like adhesive according to any one of claims 1 to 9, which is provided between the semiconductor chip and the supporting member, and bonds the semiconductor chip and the supporting member.
14. The semiconductor device according to claim 13, further comprising another semiconductor chip stacked on a surface of the semiconductor chip.
15. A method of manufacturing a semiconductor device, comprising:
attaching the adhesive layer of the dicing die-bonding integrated film of claim 12 to a semiconductor wafer;
A step of manufacturing a plurality of singulated semiconductor chips with adhesive sheets by dicing the semiconductor wafer to which the adhesive layer is attached; and
And adhering the semiconductor chip with the adhesive sheet to a support member via the adhesive sheet.
16. The method for manufacturing a semiconductor device according to claim 15, further comprising: and a step of adhering the other semiconductor chip with the adhesive sheet to the surface of the semiconductor chip adhered to the supporting member via an adhesive sheet.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/005175 WO2023152837A1 (en) | 2022-02-09 | 2022-02-09 | Film-form adhesive, dicing and die-bonding two-in-one film, semiconductor device, and method for manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118613558A true CN118613558A (en) | 2024-09-06 |
Family
ID=87563834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280090203.7A Pending CN118613558A (en) | 2022-02-09 | 2022-02-09 | Film-like adhesive, dicing die-bonding integrated film, and semiconductor device and method for manufacturing same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023152837A1 (en) |
| CN (1) | CN118613558A (en) |
| WO (1) | WO2023152837A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024190881A1 (en) * | 2023-03-15 | 2024-09-19 | 株式会社レゾナック | Film adhesive, dicing and die-bonding integral film, semiconductor device, and manufacturing method for same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013028717A (en) * | 2011-07-28 | 2013-02-07 | Nitto Denko Corp | Film adhesive |
| JP6356582B2 (en) * | 2014-11-25 | 2018-07-11 | 日東電工株式会社 | Adhesive sheet, adhesive sheet with dicing sheet, and method for manufacturing semiconductor device |
| JP6961387B2 (en) * | 2017-05-19 | 2021-11-05 | 日東電工株式会社 | Dicing die bond film |
| JP6222395B1 (en) * | 2017-08-07 | 2017-11-01 | 日立化成株式会社 | Film adhesive and dicing die bonding integrated adhesive sheet |
| SG11202100176VA (en) * | 2018-07-11 | 2021-04-29 | Showa Denko Materials Co Ltd | Method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach film |
| KR102661683B1 (en) * | 2018-08-03 | 2024-04-29 | 가부시끼가이샤 레조낙 | Adhesive composition, film adhesive, adhesive sheet, and method for producing semiconductor devices |
-
2022
- 2022-02-09 JP JP2023579926A patent/JPWO2023152837A1/ja active Pending
- 2022-02-09 WO PCT/JP2022/005175 patent/WO2023152837A1/en unknown
- 2022-02-09 CN CN202280090203.7A patent/CN118613558A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023152837A1 (en) | 2023-08-17 |
| WO2023152837A1 (en) | 2023-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW202414550A (en) | Method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach film | |
| JP7136200B2 (en) | Semiconductor device, thermosetting resin composition and dicing die bonding integrated tape used for its manufacture | |
| JP2024010048A (en) | Semiconductor device | |
| CN118613558A (en) | Film-like adhesive, dicing die-bonding integrated film, and semiconductor device and method for manufacturing same | |
| WO2022149582A1 (en) | Film-like adhesive, integrated dicing/die bonding film, semiconductor device and method for producing same | |
| KR102693643B1 (en) | Film-type adhesive, adhesive sheet, and semiconductor device and method for manufacturing the same | |
| WO2020129996A1 (en) | Film-form adhesive, adhesive sheet, and semiconductor device and manufacturing method thereof | |
| WO2020136904A1 (en) | Adhesive film, integrated dicing/die bonding film, and method for producing semiconductor package | |
| TW202105489A (en) | Production method for semiconductor device, die-bonding film, and dicing/die-bonding integrated adhesive sheet | |
| WO2020065783A1 (en) | Film-shaped adhesive, adhesive sheet, semiconductor device, and production method for semiconductor device | |
| WO2024189855A1 (en) | Film-shaped adhesive, dicing/die-bonding integral film, and semiconductor device and manufacturing method for same | |
| TWI811458B (en) | Film-like adhesive, adhesive sheet, semiconductor device, and manufacturing method thereof | |
| WO2022149581A1 (en) | Adhesive agent composition, film-form adhesive agent, dicing/die-bonding integrated film, semiconductor device, and method for manufacturing same | |
| WO2022163465A1 (en) | Semiconductor device, method for producing same, thermosetting resin composition, bonding film and integrated dicing/die bonding film | |
| WO2023157846A1 (en) | Film-like adhesive and method for producing same, integrated dicing/die bonding film, and semiconductor device and method for producing same | |
| WO2024190881A1 (en) | Film adhesive, dicing and die-bonding integral film, semiconductor device, and manufacturing method for same | |
| KR20240148336A (en) | Film-type adhesive, dicing/die bonding integrated film, and semiconductor device and manufacturing method thereof | |
| JP2022044991A (en) | Die bonding film, adhesive sheet, semiconductor device and method for manufacturing the same | |
| CN117999641A (en) | Film-like adhesive, dicing die-bonding integrated film, and semiconductor device and method for manufacturing same | |
| CN116670240A (en) | Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing same | |
| CN116783258A (en) | Film-like adhesive, dicing die-bonding integrated film, and semiconductor device and method for manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |