CN116670240A - Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing same - Google Patents
Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing same Download PDFInfo
- Publication number
- CN116670240A CN116670240A CN202180054989.2A CN202180054989A CN116670240A CN 116670240 A CN116670240 A CN 116670240A CN 202180054989 A CN202180054989 A CN 202180054989A CN 116670240 A CN116670240 A CN 116670240A
- Authority
- CN
- China
- Prior art keywords
- adhesive
- film
- semiconductor element
- component
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 216
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 215
- 239000004065 semiconductor Substances 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229920001971 elastomer Polymers 0.000 claims abstract description 61
- 239000000806 elastomer Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 230000009477 glass transition Effects 0.000 claims abstract description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 6
- 238000003776 cleavage reaction Methods 0.000 claims description 40
- 230000007017 scission Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 13
- 238000011156 evaluation Methods 0.000 claims description 5
- 239000011256 inorganic filler Substances 0.000 claims description 5
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000005070 sampling Methods 0.000 claims description 2
- 238000004378 air conditioning Methods 0.000 claims 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 48
- 239000010408 film Substances 0.000 description 47
- 239000005060 rubber Substances 0.000 description 45
- 239000003822 epoxy resin Substances 0.000 description 28
- 229920000647 polyepoxide Polymers 0.000 description 28
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 24
- 238000001816 cooling Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 16
- 239000000470 constituent Substances 0.000 description 15
- -1 acryl Chemical group 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 239000005011 phenolic resin Substances 0.000 description 14
- 238000007789 sealing Methods 0.000 description 14
- 239000002966 varnish Substances 0.000 description 14
- 238000001723 curing Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 9
- 229920001568 phenolic resin Polymers 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 239000013039 cover film Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 3
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007676 flexural strength test Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N p-dimethylbenzene Natural products CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
The invention discloses a film-shaped adhesive for bonding a semiconductor element and a supporting member for mounting the semiconductor element. The film-like adhesive contains a thermosetting resin, a curing agent and an elastomer. The elastomer includes an elastomer satisfying the following condition (i) and the following condition (ii). Condition (i): the glass transition temperature is more than 12 ℃; condition (ii): the weight average molecular weight is 80 ten thousand or less.
Description
Technical Field
The invention relates to a film-like adhesive, an adhesive sheet, a semiconductor device and a method for manufacturing the same.
Background
In recent years, a stacked MCP (Multi Chip Package: multi-chip package) in which semiconductor elements (semiconductor chips) are stacked in a plurality of layers has been widely used, and is mounted as a memory semiconductor package for a mobile phone or a portable audio device. Further, along with the multifunction of mobile phones and the like, the speed, density, integration, and the like of semiconductor packages have been advanced.
Conventionally, as a method for manufacturing a semiconductor device, the following semiconductor wafer back surface attaching method is generally used: a film-like adhesive and dicing tape are attached to the back surface of the semiconductor wafer, and then, a part of the semiconductor wafer, the film-like adhesive and the dicing tape is diced in a dicing step. In this method, the film-like adhesive must be cut at the same time when the semiconductor wafer is cut, but in a general dicing method using a diamond blade, the dicing speed must be reduced to cut the semiconductor wafer and the film-like adhesive at the same time, which may increase the cost.
On the other hand, as a method for dividing a semiconductor wafer, for example, a method of forming a modified region by irradiating the inside of a semiconductor wafer on a predetermined dicing line with laser light, a method of dicing a semiconductor wafer by performing a process of easily dividing a semiconductor wafer and then expanding an outer peripheral portion (expansion) has been proposed in recent years. (for example, patent document 1). This method is called laser Stealth cutting (Stealth). In particular, when the thickness of the semiconductor wafer is small, laser invisible dicing has an effect of reducing defects such as Chipping (Chipping), and an effect of improving yield can be expected.
Technical literature of the prior art
Patent literature
Patent document 1: japanese patent laid-open No. 2002-192370
Disclosure of Invention
Technical problem to be solved by the invention
However, since the film-like adhesive is soft and easily stretchable, it tends to be difficult to divide by expansion of the dicing tape. In order to improve the breaking property by the expansion of the film-like adhesive (particularly, the cooling expansion at a low temperature (for example, in the range of-15 to 0 ℃), it is necessary to increase the expansion amount of the dicing tape, but since the expansion amount is increased, the deflection amount of the dicing tape is also increased, and thus, there is a possibility that the subsequent conveying process and the like are adversely affected.
The present invention has been made in view of the above circumstances, and a main object thereof is to provide a film-like adhesive excellent in breaking properties due to cooling expansion.
Means for solving the technical problems
The invention provides a film-shaped adhesive for bonding a semiconductor element and a supporting member for mounting the semiconductor element. The film-like adhesive contains a thermosetting resin, a curing agent and an elastomer. The elastomer includes an elastomer satisfying the following condition (i) and the following condition (ii). The film-like adhesive can be an adhesive excellent in breaking property due to cooling expansion.
Condition (i): the glass transition temperature is more than 12 ℃;
condition (ii): the weight average molecular weight is 80 ten thousand or less.
According to the studies by the present inventors, it has been found that the use of a specific elastomer in a film-like adhesive tends to suppress the flexibility of the film-like adhesive. Accordingly, the present inventors have found that by using such a specific elastomer, it is possible to suppress excessive increase in flexibility of the film-like adhesive, and as a result, it is possible to improve the breaking property of the film-like adhesive during cooling expansion.
The film-like adhesive may be the following film-like adhesive: in the method for evaluating the breaking properties of a film-like adhesive, the film-like adhesive has a breaking coefficient m of more than 0 and not more than 70 and a breaking resistance R of more than 0N/mm 2 And is 40N/mm 2 The following is the disjunction evaluation method comprising: preparation of cross-sectional area A (mm) from film-like adhesive 2 ) A step of sampling the sample; the cleavage work W (N.mm) and the cleavage strength of the sample are obtained by a cleavage test under a low temperature condition in the range of-15 ℃ to 0 DEG CA step of cutting the elongation L (mm) by the degree P (N); a step of obtaining a cleavage coefficient m represented by the following general formula (1); and determining a breaking resistance R (N/mm) represented by the following general formula (2) 2 ) Is a step of (a) a step of (b).
m＝W/[1000×(P×L)] (1)，
R＝P/A (2)，
< conditions >
Width of sample: the thickness of the film is 5mm,
length of sample: the thickness of the film is 23mm,
relative speed of press-in jig and sample: 10 mm/min.
The film-like adhesive may further contain an inorganic filler.
Another aspect of the present invention provides an adhesive sheet comprising: a substrate; and the film-like adhesive is provided on one surface of the base material.
Another aspect of the present invention provides a semiconductor device including: a semiconductor element; a support member on which a semiconductor element is mounted; and an adhesive member provided between the semiconductor element and the support member, the adhesive member being a cured product of the film-like adhesive.
Another embodiment of the present invention provides a method for manufacturing a semiconductor device, comprising a step of bonding a semiconductor element and a supporting member using the film-shaped adhesive.
Another aspect of the present invention provides a method for manufacturing a semiconductor device, including: a step of attaching a film-like adhesive of the adhesive sheet to a semiconductor wafer; a step of manufacturing a plurality of singulated semiconductor elements with film-like adhesive by dicing the semiconductor wafer with the film-like adhesive attached thereto; and a step of adhering the semiconductor element with the film-like adhesive to the supporting member.
Effects of the invention
According to the present invention, there is provided a film-like adhesive excellent in breaking property by cooling expansion. Further, according to the present invention, there are provided an adhesive sheet and a semiconductor device using the film-like adhesive. Further, according to the present invention, there is provided a method for manufacturing a semiconductor device using a film-like adhesive or an adhesive sheet.
Drawings
FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive.
Fig. 2 is a perspective view schematically showing a sample fixed to a jig.
Fig. 3 is a cross-sectional view schematically showing a state in which a load is applied to a sample by a press-fit jig.
Fig. 4 is a graph schematically showing an example of the result of the cleavage test.
Fig. 5 is a schematic cross-sectional view showing an embodiment of the adhesive sheet.
Fig. 6 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 7 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 8 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
Fig. 9 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps) are not necessarily essential unless otherwise specifically indicated. The sizes of the constituent elements in the drawings are conceptual sizes, and the relative relationship of the sizes of the constituent elements is not limited to the relationship shown in the drawings.
The numerical values and ranges thereof in the present specification are also the same, and do not limit the present invention. In the present specification, the numerical range indicated by the term "to" means a range in which numerical values before and after the term "to" are included as a minimum value and a maximum value, respectively. In the numerical ranges described in the present specification in stages, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of the numerical range described in other stages. In addition, in the numerical ranges described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the embodiment.
In the present specification, (meth) acrylate means acrylate or methacrylate corresponding thereto. The same applies to other similar expressions concerning (meth) acryl, (meth) acrylic copolymer and the like.
The film-like adhesive according to one embodiment is used for bonding a semiconductor element to a supporting member on which the semiconductor element is mounted. The film-like adhesive contains a thermosetting resin (hereinafter, sometimes referred to as "(a) component"), a curing agent (hereinafter, sometimes referred to as "(B) component") and an elastomer (hereinafter, sometimes referred to as "(C) component"). The film-like adhesive may further contain an inorganic filler (hereinafter, sometimes referred to as "(D) component"). The film-like adhesive may further contain a coupling agent (hereinafter, sometimes referred to as "(E) component"), a curing accelerator (hereinafter, sometimes referred to as "(F) component"), and other components.
The film-like adhesive can be obtained by molding an adhesive composition containing the component (a), the component (B), and the component (C), and other components ((D), the component (E), the component (F), and the other components, etc.) added as needed into a film. The film-like adhesive (adhesive composition) may be in a semi-cured (B-stage) state and may be in a fully cured (C-stage) state after the curing treatment.
(A) The components are as follows: thermosetting resin
From the viewpoint of adhesion, the component (a) may be an epoxy resin. Examples of the epoxy resin include bisphenol a type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol a novolac type epoxy resin, bisphenol F novolac type epoxy resin, stilbene type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, and diglycidyl ether compound of polycyclic aromatic type such as polyfunctional phenol and anthracene. These may be used singly or in combination of two or more. The epoxy resin may be a cresol novolac type epoxy resin.
The epoxy equivalent of the epoxy resin is not particularly limited and may be 90 to 300g/eq or 110 to 290g/eq.
(B) The components are as follows: curing agent
(B) The component (A) is a component that functions as a curing agent for the component (A). When the component (a) is an epoxy resin, the component (B) may be a phenolic resin which can be a curing agent for the epoxy resin.
The phenolic resin may be used without any particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include novolak type phenol resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol a, bisphenol F, phenylphenol, aminophenol, etc., and/or compounds having an aldehyde group such as α -naphthol, β -naphthol, dihydroxynaphthalene, etc., with formaldehyde, etc., under an acidic catalyst, phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl type phenol resins, phenyl aralkyl type phenol resins, etc., which are synthesized from phenols such as allylated bisphenol a, allylated bisphenol F, allylated naphthalene diol, phenol novolak, phenol, etc., and/or naphthols with dimethoxy para-xylene or bis (methoxymethyl) biphenyl. These may be used singly or in combination of two or more. Wherein, the phenolic resin can also be phenyl aralkyl phenolic resin.
The hydroxyl equivalent of the phenolic resin may be 70g/eq or more or 70 to 300g/eq. When the hydroxyl equivalent of the phenolic resin is 70g/eq or more, the storage modulus of the film tends to be further improved, and when it is 300g/eq or less, defects caused by the generation of foaming, outgas or the like can be prevented.
When the component (A) is an epoxy resin and the component (B) is a phenolic resin, the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenolic resin (epoxy equivalent of the epoxy resin/hydroxyl equivalent of the phenolic resin) may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45 from the viewpoint of curability. When the equivalent ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming excessively high, and more sufficient fluidity can be obtained.
The total content of the component (a) and the component (B) may be 5 to 50 parts by mass, 10 to 40 parts by mass, or 15 to 30 parts by mass, based on 100 parts by mass of the total of the component (a), the component (B) and the component (C). When the total content of the component (a) and the component (B) is 5 parts by mass or more relative to 100 parts by mass of the total of the component (a), the component (B) and the component (C), the elastic modulus tends to be further improved by crosslinking. When the total content of the component (a) and the component (B) is 50 parts by mass or less relative to 100 parts by mass of the total of the component (a), the component (B) and the component (C), the film handleability tends to be more excellent.
(C) The components are as follows: elastic body
Examples of the component (C) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, and butadiene resins; modified products of these resins, and the like. These may be used singly or in combination of two or more. Among them, the component (C) may be an acrylic resin (acrylate rubber) having a constituent unit derived from (meth) acrylic acid ester as a main component, from the viewpoints of less ionic impurities, more excellent heat resistance, more easy securing of connection reliability of the semiconductor device, and more excellent fluidity. (C) The content of the constituent unit derived from the (meth) acrylate ester in the component (a) may be, for example, 70 mass% or more, 80 mass% or more, or 90 mass% or more based on the total amount of the constituent units. The acrylic resin (acrylate rubber) may contain a constituent unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group.
Wherein the component (C) contains an elastomer satisfying the conditions (i) and (ii) (hereinafter, sometimes referred to as the "component (C1)").
Condition (i): the glass transition temperature is more than 12 ℃;
condition (ii): the weight average molecular weight is 80 ten thousand or less.
The glass transition temperature (Tg) of the component (C1) in the condition (i) may be 12℃or higher, 15℃or higher, 18℃or higher, or 20℃or higher. When the Tg of the component (C1) is 12℃or higher, the adhesive strength of the film-like adhesive can be further improved, and further, the flexibility of the film-like adhesive can be prevented from becoming too high. Therefore, by using such a component (C1), the film-like adhesive can be improved in breaking property during cooling expansion. (C1) The upper limit of Tg of the component is not particularly limited, and may be, for example, 55℃or lower, 50℃or lower, 45℃or lower, 40℃or lower, 35℃or lower, 30℃or lower, or 25℃or lower. When the Tg of the component (C1) is 55℃or lower, the decrease in flexibility of the film-like adhesive tends to be suppressed. Thus, when the film-like adhesive is attached to a semiconductor wafer, the void tends to be easily and sufficiently buried. Further, breakage during dicing due to a decrease in adhesion to the semiconductor wafer can be prevented. Herein, the glass transition temperature (Tg) refers to a value measured using a DSC (differential scanning calorimeter) (for example, manufactured by Rigaku Corporation, thermo Plus 2). By adjusting the type and content of the constituent unit constituting the component (C1) (when the component (C1) is an acrylic resin (acrylate rubber), the Tg of the component (C1) can be adjusted to a desired range.
In the condition (ii), the weight average molecular weight (Mw) of the component (C1) is 80 ten thousand or less, or 70 ten thousand or less, 60 ten thousand or less, 50 ten thousand or less, 40 ten thousand or less, or 30 ten thousand or less. (C1) The lower limit of the Mw of the component is not particularly limited, and may be, for example, 1 ten thousand or more, 5 ten thousand or more, or 10 ten thousand or more. When the Mw of the component (C1) is within this range, the breaking property, film formability, film strength, flexibility, tackiness, etc. at the time of cooling expansion of the film can be appropriately controlled, and the reflow property is excellent, and the embeddability can be improved. Here, mw refers to a value measured by Gel Permeation Chromatography (GPC) and converted using a calibration curve based on standard polystyrene.
(C1) The content of the component (C) may be 50 to 100% by mass, 70 to 100% by mass, 90 to 100% by mass, or 95 to 100% by mass based on the total amount of the component (C). (C1) The content of the component (C) may be 100% by mass based on the total amount of the component (C).
In addition to the component (C1), the component (C) may contain an elastomer that does not satisfy the requirement of the component (C1) (hereinafter, sometimes referred to as a "(C2 component").
(C2) The content of the component (C) may be 0 to 50% by mass, 0 to 30% by mass, 0 to 10% by mass, or 0 to 5% by mass based on the total amount of the component (C). (C2) The content of the component (C) may be 0% by mass based on the total amount of the component (C). That is, the component (C) may not contain the component (C2).
The content of the component (C) may be 50 to 95 parts by mass, 60 to 90 parts by mass, or 70 to 85 parts by mass with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C). When the content of the component (C) is within this range, a film having higher elasticity can be obtained, and the die shear strength tends to be further improved.
(D) The components are as follows: inorganic filler
Examples of the component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, and silicon dioxide. These may be used singly or in combination of two or more. Among them, the component (D) may be silica from the viewpoint of adjusting the melt viscosity. (D) The shape of the component is not particularly limited, and may be spherical.
The average particle diameter of the component (D) may be 0.01 to 1. Mu.m, 0.01 to 0.5. Mu.m, 0.01 to 0.3. Mu.m, or 0.01 to 0.1. Mu.m from the viewpoint of fluidity. The average particle diameter is a value obtained by conversion from the BET specific surface area.
The content of the component (D) may be 0.1 part by mass or more, 1 part by mass or more, 3 parts by mass or more, or 5 parts by mass or more, and may be 50 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, or 15 parts by mass or less, relative to 100 parts by mass of the total amount of the component (a), the component (B), and the component (C).
(E) The components are as follows: coupling agent
(E) The component may be a silane coupling agent. Examples of the silane coupling agent include gamma-ureidopropyltriethoxysilane, gamma-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) aminopropyltrimethoxysilane. These may be used singly or in combination of two or more.
(F) The components are as follows: curing accelerator
(F) The component is not particularly limited, and commonly used components can be used. Examples of the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. These may be used singly or in combination of two or more. Among them, the component (F) may be imidazoles or derivatives thereof from the viewpoint of reactivity.
Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used singly or in combination of two or more.
The film-like adhesive (adhesive composition) may also contain other components. Examples of the other component include pigments, ion capturing agents, antioxidants, and the like.
The total content of the (E) component, the (F) component and the other components may be 0 to 30 parts by mass based on 100 parts by mass of the total of the (a) component, the (B) component and the (C) component.
FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive. The film-like adhesive 1 (adhesive film) shown in fig. 1 is obtained by molding an adhesive composition into a film shape. The film-like adhesive 1 may be in a semi-cured (B-stage) state. Such a film-like adhesive 1 can be formed by applying an adhesive composition onto a support film. When a varnish of an adhesive composition (adhesive varnish) is used, the component (a), the component (B), the component (C), and the component (if necessary) are mixed or kneaded in a solvent to prepare an adhesive varnish, and the obtained adhesive varnish is applied to a support film and dried by heating to remove the solvent, whereby the film-like adhesive 1 can be obtained.
The support film is not particularly limited as long as it can withstand the above-mentioned heat drying, and may be, for example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyethylene naphthalate film, a polymethylpentene film, or the like. The substrate 2 may be a multilayer film formed by combining two or more kinds, or may be a substrate having a surface treated with a release agent such as silicone-based or silica-based. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.
The mixing or kneading can be performed by using a general dispersing machine such as a stirrer, a kneader, a three-roll machine, or a ball mill, and these may be appropriately combined.
The solvent used for preparing the adhesive varnish is not limited as long as each component can be uniformly dissolved, kneaded or dispersed, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. The solvent may be methyl ethyl ketone or cyclohexanone from the viewpoint of drying speed and price.
As a method of applying the adhesive varnish to the support film, a known method can be used, and examples thereof include a doctor blade method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. The heating and drying are not particularly limited as long as the solvent used is sufficiently volatilized, and may be performed by heating at 50 to 150℃for 1 to 30 minutes.
The thickness of the film-like adhesive 1 may be 50 μm or less, 40 μm or less, 30 μm or less, 20 μm or less, or 15 μm or less. The lower limit of the thickness of the film-like adhesive 1 is not particularly limited, and may be, for example, 1 μm or more.
In the method for evaluating the breaking properties of a film-like adhesive under low-temperature conditions (e.g., -15 ℃ C. To 0 ℃ C.) in which the results of the breaking test are used, the film-like adhesive 1 may have a breaking coefficient m of more than 0 and 70 or less and a breaking resistance R of more than 0N/mm 2 And is 40N/mm 2 The following film-like adhesives.
< conditions >
Width of sample: the thickness of the film is 5mm,
length of sample: the thickness of the film is 23mm,
relative speed of press-in jig and sample: 10 mm/min.
Hereinafter, a cleavage test will be described. The cleavage test is classified as a flexural strength test, and includes a step of pressing a central portion of a sample until the sample breaks in a state where both ends of the sample are fixed. As shown in fig. 2, the sample S is used for a cleavage test in a state of being held and fixed by a pair of sample fixing jigs 14. The pair of sample fixing jigs 14 is made of, for example, thick paper having sufficient strength, and has rectangular openings 14a at the centers thereof. A load is applied to the center portion of the sample S in a fixed state by using the press-fit jig 15 (see fig. 3).
The sample S may be a sample obtained by cutting out a film-like adhesive to be evaluated, and may be prepared without laminating a plurality of adhesive sheets cut out from the film-like adhesive. That is, the thickness of the sample S may be the same as the thickness of the film-like adhesive. The width (Ws in FIG. 2) of the sample S may be, for example, 1 to 30mm or 3 to 8mm. The width may be set to an appropriate width according to the condition of the measuring device. The length (Ls in FIG. 2) of the sample S may be, for example, 5 to 50mm, 10 to 30mm, or 6 to 9mm. The length of the sample S depends on the size of the opening 14a of the sample fixing jig 14. The shape of the sample fixing jig 14 and the size of the sample S may be other than those described above as long as the sample S can be subjected to a cleavage test.
The press-fit jig 15 is formed of a cylindrical member having a conical tip portion 15 a. The diameter (R in FIG. 3) of the press-fit jig 15 may be, for example, 3 to 15mm or 5 to 10mm. The angle (θ in fig. 3) of the tip portion 15a may be, for example, 40 to 120 °, or 60 to 100 °.
The cleavage test was performed in a constant temperature bath set to a predetermined temperature. The constant temperature bath may be set at a constant temperature (assumed cooling expansion temperature) in the range of-15 to 0 ℃. As the thermostatic bath, for example, AETEC Co., ltd., TLF-R3-F-W-PL-S can be used. The work of severance W, the strength of severance P, and the elongation of severance L were obtained using an automatic chart (for example, AZT-CA01 manufactured by A & D Company, load cell 50N, compression mode).
The relative speed between the press-in jig 15 and the sample S may be, for example, 1 to 100 mm/min or 5 to 20 mm/min. If the relative speed is too high, data of the cleaving process tends to be insufficiently obtained, and if it is too low, stress is relaxed and cleavage is difficult. The press-fitting distance of the press-fitting jig 15 may be, for example, 1 to 50mm or 5 to 30mm. If the press-in distance is too short, the cutting tends to be difficult. For the film-like adhesive to be evaluated, it is preferable to prepare a plurality of samples and perform a plurality of cleavage tests to confirm the stability of the test results.
Fig. 4 is a graph showing an example of the cleavage test result. As shown in fig. 4, the work of cleavage W is the area surrounded by the graph when the graph is created with the vertical axis as the load and the horizontal axis as the amount of pushing until the sample S breaks. The breaking strength P is the load at which the sample S breaks. The elongation at break L is the elongation of the sample S at break. The breaking elongation L can be calculated by using a trigonometric function from the press-in distance at the time of breaking the sample S and the width of the opening 14a of the sample fixing jig 14.
Based on the values of the breaking work W (N.mm), the breaking strength P (N), and the breaking elongation L (mm) obtained by the breaking test, the breaking coefficient m (dimensionless) and the breaking resistance R (N/mm) are obtained by the general formula (1) and the general formula (2) 2 )。
m＝W/[1000×(P×L)] (1)，
R＝P/A (2)，
According to the study of the present inventors, when the cleavage test is conducted under the following conditions, the cleavage coefficient m is more than 0 and 70 or less, and the cleavage resistance R is more than 0N/mm 2 And is 40N/mm 2 The film-like adhesive described below tends to be excellent in breaking properties when actually subjected to cooling expansion in laser invisible dicing.
< conditions >
Width of sample: the thickness of the film is 5mm,
length of sample: the thickness of the film is 23mm,
relative speed of press-in jig and sample: 10 mm/min.
As described above, the cleavage coefficient m (dimensionless) may be greater than 0 and 70 or less, or may be 10 to 60 or 15 to 55. The cutting coefficient m is the film adhesion under the low temperature condition Parameters related to the extensibility of the agent. When the breaking coefficient m is more than 70, the film-like adhesive tends to have insufficient breaking properties due to excessive extensibility of the film-like adhesive. When the fracture coefficient m is 15 or more, the stress transmissibility tends to be good. The breaking resistance R can be greater than 0N/mm 2 And is 40N/mm 2 Below, it may be greater than 0N/mm 2 And is 35N/mm 2 Or 1 to 30N/mm 2 . When the cutting resistance R is more than 40N/mm 2 In this case, the film-like adhesive tends to have insufficient breaking properties due to cooling expansion due to excessive strength. In addition, when the breaking resistance R is 20N/mm 2 In the above, the excellent breaking performance due to the cooling expansion tends to be obtained by the good stress propagation during the cooling expansion. Film-like adhesives having a cleavage coefficient m and a cleavage resistance R within the above ranges can be preferably used for laser invisible dicing. The film-like adhesive having the cleavage coefficient m and the cleavage resistance R in the above ranges can be suitably used in a manufacturing process of a semiconductor device in which cooling expansion is performed.
Fig. 5 is a schematic cross-sectional view showing an embodiment of the adhesive sheet. The adhesive sheet 100 shown in fig. 5 includes a base material 2 and a film-like adhesive 1 provided on the base material 2. Fig. 6 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 110 shown in fig. 6 includes a base material 2, a film-like adhesive 1 provided on the base material 2, and a cover film 3 provided on the surface of the film-like adhesive 1 opposite to the base material 2.
The same substrate as the support film can be used as the substrate 2.
The cover film 3 is used to prevent the film-like adhesive from being damaged or contaminated, and may be, for example, a polyethylene film, a polypropylene film, a surface-release agent-treated film, or the like. The thickness of the cover film 3 may be, for example, 15 to 200 μm or 70 to 170 μm.
The adhesive sheets 100 and 110 can be formed by applying an adhesive composition (adhesive varnish) onto the substrate 2 in the same manner as the method for forming the film-like adhesive. The method of applying the adhesive composition to the substrate 2 may be the same as the method of applying the above-mentioned adhesive composition (adhesive varnish) to the support film.
The adhesive sheet 110 can also be obtained by laminating the cover film 3 on the film-like adhesive 1.
The adhesive sheets 100 and 110 can be formed using a film-like adhesive prepared in advance. At this time, the adhesive sheet 100 can be formed by laminating on the substrate 2 under a prescribed condition (for example, room temperature (20 ℃) or a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be continuously manufactured and has excellent efficiency, the adhesive sheet 100 can be formed in a heated state using a roll laminator.
Another embodiment of the adhesive sheet is a dicing die-bonding integrated adhesive sheet in which the base material 2 is a dicing tape. Fig. 7 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 120 (dicing die-bonding integrated adhesive sheet) shown in fig. 7 includes a dicing tape 8 and a film-like adhesive 1 provided on the dicing tape 8. When the dicing die bonding integrated adhesive sheet is used, the lamination process of the semiconductor wafer is 1 time, and therefore, the efficiency of the operation can be achieved.
In one embodiment, the dicing tape 8 is provided with a base film 7 and a pressure-sensitive adhesive layer 6 provided on the base film 7.
Examples of the base film 7 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. The base film 7 may be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, as necessary.
The pressure-sensitive adhesive layer 6 is not particularly limited as long as it has a sufficient adhesive force (adhesive force) that the semiconductor element does not fly during dicing and has a low adhesive force to such an extent that the semiconductor element is not damaged in the subsequent step of picking up the semiconductor element, and a pressure-sensitive adhesive layer conventionally known in the field of dicing tapes can be used. The pressure-sensitive adhesive layer 6 may be either a pressure-sensitive type or a radiation-curable type.
The thickness of the dicing tape 8 (the base film 7 and the pressure-sensitive adhesive layer 6) may be 60 to 150 μm or 70 to 130 μm from the viewpoints of economy and film operability.
The adhesive sheet 120 (dicing die-bonding integrated adhesive sheet) can be obtained by, for example, bonding the pressure-sensitive adhesive layer 6 of the dicing tape 8 and the film-like adhesive 1.
The film-like adhesive and the adhesive sheet can be used for manufacturing a semiconductor device, and can be used for manufacturing a semiconductor device including the steps of: after attaching the film-like adhesive and dicing tape to a semiconductor wafer or singulated semiconductor elements (semiconductor chips) at 0 to 90 ℃, the semiconductor elements with film-like adhesive are obtained by dicing with a rotary blade, laser, or stretching, and then the semiconductor elements with film-like adhesive are bonded to an organic substrate, a lead frame, or other semiconductor elements.
Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.
The film-like adhesive and the adhesive sheet can be used as a lead frame for connecting a semiconductor element such as IC, LSI, etc. to a 42 alloy lead frame, copper lead frame, etc.; plastic films such as polyimide resin and epoxy resin; a material obtained by impregnating a base material such as a glass nonwoven fabric with a plastic such as a polyimide resin or an epoxy resin, and curing the material; an adhesive for bonding a support member for mounting a semiconductor such as a ceramic such as alumina is used.
In a Stacked-PKG having a structure in which a plurality of semiconductor elements are Stacked, a film-like adhesive and an adhesive sheet are also preferably used as an adhesive for bonding a semiconductor element and a semiconductor element. At this time, one of the semiconductor elements becomes a supporting member on which the semiconductor element is mounted.
The film-like adhesive and the adhesive sheet can be used, for example, as a protective sheet for protecting the back surface of a semiconductor element of a flip-chip type semiconductor device, a sealing sheet for sealing between the surface of the semiconductor element of the flip-chip type semiconductor device and an adherend, and the like.
Hereinafter, a semiconductor device manufactured using a film-shaped adhesive will be specifically described with reference to drawings. In recent years, semiconductor devices of various structures have been proposed, and the application of the film-like adhesive according to the present embodiment is not limited to the semiconductor devices of the structures described below.
Fig. 8 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 200 shown in fig. 8 includes a semiconductor element 9, a support member 10 on which the semiconductor element 9 is mounted, and an adhesive member (cured product 1c of film-like adhesive) provided between the semiconductor element 9 and the support member 10 and bonding the semiconductor element 9 and the support member 10. The connection terminals (not shown) of the semiconductor element 9 are electrically connected to external connection terminals (not shown) via wires 11, and sealed with a sealing material 12.
Fig. 9 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the semiconductor device 210 shown in fig. 9, the first layer semiconductor element 9a is bonded to the support member 10 having the terminal 13 formed thereon by the bonding member (cured product 1c of film-like adhesive), and the second layer semiconductor element 9b is further bonded to the first layer semiconductor element 9a by the bonding member (cured product 1c of film-like adhesive). Connection terminals (not shown) of the first-layer semiconductor element 9a and the second-layer semiconductor element 9b are electrically connected to external connection terminals via wires 11, and sealed with a sealing material 12. As described above, the film-like adhesive of the present embodiment can be preferably used also in a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.
The semiconductor device (semiconductor package) shown in fig. 8 and 9 is obtained by, for example, allowing a film-like adhesive to exist between a semiconductor element and a supporting member or between a semiconductor element and a semiconductor element, bonding the two by thermocompression bonding, and then, if necessary, performing a wire bonding step, a sealing step with a sealing material, a heat-melting step including reflow with solder, and the like. The heating temperature in the thermocompression bonding step is usually 20 to 250 ℃, the load is usually 0.1 to 200N, and the heating time is usually 0.1 to 300 seconds.
As a method of allowing the film-like adhesive to exist between the semiconductor element and the support member or between the semiconductor element and the semiconductor element, as described above, a method of attaching the semiconductor element with the film-like adhesive to the support member or the semiconductor element after the semiconductor element is previously manufactured may be employed.
Next, an embodiment of a method for manufacturing a semiconductor device using the dicing die-bonding integrated adhesive sheet shown in fig. 7 will be described. The method for manufacturing the semiconductor device based on the dicing die-bonding integrated adhesive sheet is not limited to the method for manufacturing the semiconductor device described below.
First, a semiconductor wafer is pressed against the film-like adhesive 1 in the adhesive sheet 120 (dicing die-bonding integrated adhesive sheet), and is held and bonded and fixed (mounting step). The present step may be performed while being pressed by a pressing mechanism such as a pressure roller.
Then, dicing of the semiconductor wafer is performed. Thus, the semiconductor wafer is cut into a predetermined size, and a plurality of singulated semiconductor elements (semiconductor chips) with film-like adhesive are manufactured. Dicing can be performed, for example, from the circuit side of the semiconductor wafer according to a conventional method. In this step, for example, a dicing method called full dicing, which is a method of cutting until dicing the tape, a method of dividing the semiconductor wafer by half dicing and stretching the semiconductor wafer under cooling, a dicing method using a laser, and the like can be used. The cutting device used in the present step is not particularly limited, and a conventionally known device can be used.
In order to peel and adhere the semiconductor element fixed to the dicing die-bonding integrated adhesive sheet, pick-up of the semiconductor element is performed. The method of picking up is not particularly limited, and various methods known in the related art can be employed. For example, a method in which each semiconductor element is lifted up from the dicing die-bonding integrated adhesive sheet side by a needle, and the lifted-up semiconductor element is picked up by a pickup device, and the like are cited.
Here, in the case where the pressure-sensitive adhesive layer is radiation (for example, ultraviolet) curable, pickup is performed after irradiation of the radiation to the pressure-sensitive adhesive layer. Thus, the adhesion of the pressure-sensitive adhesive layer to the film-like adhesive is reduced, and peeling of the semiconductor element is facilitated. As a result, the semiconductor element can be picked up without being damaged.
Then, the semiconductor element with the film-like adhesive formed by dicing is bonded to a support member for mounting the semiconductor element via the film-like adhesive. Bonding may be performed by crimping. The conditions for die bonding are not particularly limited, and can be appropriately set as needed. Specifically, the die bonding can be performed at a die bonding temperature of 80 to 160 ℃, a die bonding load of 5 to 15N, and a die bonding time of 1 to 10 seconds, for example.
If necessary, a step of thermally curing the film-like adhesive may be provided. The film-like adhesive for bonding the support member to the semiconductor element is thermally cured by the above-mentioned bonding step, whereby the adhesive can be more firmly bonded and fixed. In the case of heat curing, pressure may be applied simultaneously to cure the material. The heating temperature in this step can be appropriately changed according to the constituent components of the film-like adhesive. The heating temperature may be, for example, 60 to 200 ℃. The temperature and pressure may be changed in a stepwise manner.
Next, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the support member to an electrode pad (electrode pad) on the semiconductor element by a bonding wire is performed. As the bonding wire, for example, gold wire, aluminum wire, copper wire, or the like is used. The temperature at which wire bonding is performed may be in the range of 80 to 250 ℃ or 80 to 220 ℃. The heating time may be from a few seconds to a few minutes. The connection may be performed by using both ultrasonic vibration energy and pressure bonding energy by applying pressure in a state heated in the above temperature range.
Next, a sealing step of sealing the semiconductor element with a sealing resin is performed. This step is performed to protect the semiconductor element or the bonding wire mounted on the support member. The present step is performed by molding the sealing resin with a mold. The sealing resin may be, for example, an epoxy resin. The substrate and the residue are buried by heat and pressure at the time of sealing, and peeling due to bubbles in the bonding interface can be prevented.
Then, in the post-curing step, the sealing resin which is not cured sufficiently is cured completely in the sealing step. In the sealing step, even when the film-like adhesive is not thermally cured, the film-like adhesive can be thermally cured and bonded and fixed at the same time as the sealing resin is cured in the present step. The heating temperature in this step can be set appropriately according to the type of the sealing resin, and may be, for example, in the range of 165 to 185 ℃, and the heating time may be about 0.5 to 8 hours.
Then, the semiconductor element with the film-like adhesive bonded to the support member is heated using a reflow furnace. In this step, the resin-sealed semiconductor device may be surface-mounted on the support member. Examples of the surface mounting method include reflow soldering in which solder is supplied onto a printed wiring board in advance, and then melted by heating with warm air or the like to perform soldering. Examples of the heating method include hot air reflow, infrared reflow, and the like. The heating method may be used to heat the whole or locally. The heating temperature may be, for example, in the range of 240 to 280 ℃.
Examples
Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited to these examples.
[ production of film-like adhesive ]
Examples 1 to 6 and comparative example 1
< preparation of adhesive varnish >
Cyclohexanone was added to a composition comprising component (A), component (B) and component (D) in the amounts shown in Table 1 (unit: parts by mass), and stirred and mixed. To this, component (C) is added (component (C1) or component (C2)) and stirred, and component (E) and component (F) are further added and stirred until each component becomes uniform, thereby preparing an adhesive varnish. The numerical values of the component (C) shown in table 1 refer to parts by mass of the solid content.
The components shown in table 1 are the following components.
(A) The components are as follows: thermosetting resin
( A-1) YDCN-700-10 (trade name, NIPPON stem & SUMIKIN CHEMICAL co., ltd., manufacture, o-cresol novolac type epoxy resin, epoxy equivalent: 209g/eq )
(B) The components are as follows: curing agent
( B-1) HE-100C-30 (trade name, AIR WATER inc. Manufactured, phenyl aralkyl type phenol resin, hydroxyl equivalent: 174g/eq and softening point 77 DEG C )
(C) The components are as follows: elastic body
(C1) The components are as follows: elastomer satisfying condition (i) and condition (ii)
( C1-1) in an acrylate rubber solution (in an acrylate rubber solution of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylate rubber), a solution of an acrylate rubber which is a part of constituent units of the acrylate rubber was changed, and the measured Tg of the acrylate rubber: weight average molecular weight of acrylate rubber at 20 ℃): 80 ten thousand (80) )
( C1-2) in an acrylate rubber solution (in an acrylate rubber solution of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylate rubber), a solution of an acrylate rubber which is a part of constituent units of the acrylate rubber was changed, and the measured Tg of the acrylate rubber: weight average molecular weight of acrylate rubber at 25 ℃): 80 ten thousand (80) )
( C1-3) in an acrylate rubber solution (in an acrylate rubber solution of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylate rubber), a solution of an acrylate rubber which is a part of constituent units of the acrylate rubber was changed, and the measured Tg of the acrylate rubber: weight average molecular weight of acrylate rubber at 12 ℃): 50 ten thousand (50) )
( C1-4) in an acrylate rubber solution (in an acrylate rubber solution of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylate rubber), a solution of an acrylate rubber which is a part of constituent units of the acrylate rubber was changed, and the measured Tg of the acrylate rubber: weight average molecular weight of acrylate rubber at 20 ℃): 50 ten thousand (50) )
( C1-5) in an acrylate rubber solution (in an acrylate rubber solution of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylate rubber), a solution of an acrylate rubber which is a part of constituent units of the acrylate rubber was changed, and the measured Tg of the acrylate rubber was: weight average molecular weight of acrylate rubber at 20 ℃): 20 ten thousand (20) )
(C2) The components are as follows: (C1) Elastomer other than component
( C2—1) in an acrylate rubber solution (in an acrylate rubber solution of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylate rubber), a solution of an acrylate rubber which is a part of constituent units of the acrylate rubber was changed, and the measured Tg of the acrylate rubber: weight average molecular weight of acrylate rubber at 3 ℃): 80 ten thousand (80) )
(D) The components are as follows: inorganic filler
( D-1) R972 (trade name, NIPPON AEROSIL co., ltd. Manufactured, silica particles, average particle diameter: 0.016 μm )
(E) The components are as follows: coupling agent
(E-1) A-189 (trade name, manufactured by Nippon Unicar Company Limited, gamma-mercaptopropyl trimethoxysilane)
(E-2) A-1160 (trade name, manufactured by Nippon Unicar Company Limited, gamma-ureidopropyltriethoxysilane)
(F) The components are as follows: curing accelerator
(F-1) 2PZ-CN (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole)
< preparation of film-like adhesive >
The adhesive varnish thus prepared was filtered through a 100-mesh filter, and vacuum defoamed. As a base material, a polyethylene terephthalate film (PET) film subjected to a mold release treatment having a thickness of 38 μm was prepared, and an adhesive varnish after vacuum defoaming was coated on the PET film. The applied adhesive varnish was heat-dried at 90℃for 5 minutes, followed by heat-dried at 130℃for 5 minutes, i.e., heat-dried in two stages, to obtain film-like adhesives of examples 1 to 3 and comparative example 1 in a B-stage state. In the film-like adhesive, the thickness of the film-like adhesive was adjusted to 10 μm depending on the application amount of the adhesive varnish.
< evaluation of Cooling-spread-based breaking Property of film-like adhesive >
Adhesive sheets (width 5 mm. Times. Length 100 mm) were cut out from the film-like adhesives of examples 1 to 6 and comparative example 1, respectively. The adhesive sheet is fixed to a pair of jigs (thick paper), and the portions of the adhesive sheet exposed from the jigs are removed. Thus, a sample (width 5mmx length 23 mm) to be evaluated was obtained. A cleavage test was performed in a constant temperature bath (AETEC Co., ltd., TLF-R3-F-W-PL-S) set to a predetermined temperature condition. Specifically, a cleavage test was performed using an automatic plotting instrument (AZT-CA 01, load cell 50N, manufactured by A & D Company) under the conditions of a compression mode, a speed of 10 mm/min, and a press-in distance of 5mm, to obtain a cleavage work W, a cleavage strength P, and a cleavage elongation L at the time of breaking the film-like adhesive. The cleavage coefficient m and the cleavage resistance R are calculated from the above general formulae (1) and (2). Further, the respective examples and the respective comparative examples were subjected to the cleavage test 8 or more times. The results are shown in table 1. The values shown in table 1 are average values of the results obtained by the multiple cleavage test.
In order to confirm that the breaking performance evaluation matches the breaking performance at the time of cooling expansion, dicing die-bonding integrated films each having the film-like adhesives of examples 1 to 6 and comparative example 1 as an adhesive layer were produced, and the breaking performance of the adhesive layer (film-like adhesive) was evaluated under the following conditions.
Thickness of silicon wafer: 30 μm
Chip size singulated by laser stealth dicing: 10mm in longitudinal direction and 10mm in transverse direction
Cooling the expanded temperature: the same temperature as the constant temperature bath for the cleavage test of the examples and comparative examples
Jacking up with an expanding ring: 10mm of
Evaluation criterion: the silicon wafer lifted up by the expanding ring is irradiated with light. The case where light passed between adjacent chips with an adhesive sheet (the case where the silicon wafer and the adhesive layer were divided) was evaluated as "a", and the case where there was a region where light did not pass (the case where the silicon wafer and the adhesive layer were not divided) was evaluated as "B". The results are shown in table 1.
/>
As shown in Table 1, the film adhesives of examples 1 to 6 have a cleavage coefficient m of 70 or less, and the breaking resistance R is 40N/mm 2 Hereinafter, the breaking property based on the cooling expansion is evaluated as "a". In contrast, the film-like adhesive of comparative example 1 had a cleavage coefficient m of more than 70 and a cleavage resistance R of more than 40N/mm 2 The breaking property based on the cooling expansion was evaluated as "B". From these results, it was confirmed that the film-like adhesive of the present invention is excellent in breaking property by cooling expansion.
Symbol description
1-film adhesive, 2-base, 3-cover film, 6-pressure-sensitive adhesive layer, 7-base film, 8-dicing tape, 9a, 9 b-semiconductor element, 10-supporting member, 11-wire, 12-sealing material, 13-terminal, 14-sample fixing jig, 14 a-opening, 15-press-in jig, 15 a-tip portion, 100, 110, 120-adhesive sheet, 200, 210-semiconductor device, S-sample.
Claims (8)
1. A film-like adhesive, which comprises a film-like adhesive,
which is used for bonding a semiconductor element and a supporting member for carrying the semiconductor element,
the film-like adhesive contains a thermosetting resin, a curing agent and an elastomer,
the elastomer includes an elastomer satisfying the following condition (i) and the following condition (ii):
condition (i): the glass transition temperature is more than 12 ℃;
condition (ii): the weight average molecular weight is 80 ten thousand or less.
2. The film-like adhesive according to claim 1,
in the method for evaluating the breaking properties of a film-like adhesive, the film-like adhesive has a breaking coefficient m of more than 0 and not more than 70 and a breaking resistance R of more than 0N/mm 2 And is 40N/mm 2 In the following the procedure is described,
the disjunction evaluation method comprises the following steps:
preparing a cross-sectional area A (mm) from the film-like adhesive 2 ) A step of sampling the sample;
a step of obtaining the work of cleavage W (N.mm), the strength of cleavage P (N) and the elongation of cleavage L (mm) of the sample by a cleavage test under a low temperature condition in the range of-15 to 0 ℃;
a step of obtaining a cleavage coefficient m represented by the following general formula (1); a kind of electronic device with high-pressure air-conditioning system
The breaking resistance R (N/mm) represented by the following formula (2) was obtained 2 ) In the process of (a) and (b),
m＝W/[1000×(P×L)] (1)，
R＝P/A (2)，
condition >
Width of sample: the thickness of the film is 5mm,
length of sample: the thickness of the film is 23mm,
Relative speed of press-in jig and sample: 10 mm/min.
3. A film-like adhesive according to claim 1 or 2, wherein,
the film-like adhesive further contains an inorganic filler.
4. An adhesive sheet comprising:
a substrate; a kind of electronic device with high-pressure air-conditioning system
A film-like adhesive according to any one of claims 1 to 3, provided on one surface of the substrate.
5. The adhesive sheet according to claim 4, wherein,
the substrate is a dicing tape.
6. A semiconductor device is provided with:
a semiconductor element;
a support member on which the semiconductor element is mounted; a kind of electronic device with high-pressure air-conditioning system
An adhesive member provided between the semiconductor element and the supporting member, for adhering the semiconductor element to the supporting member,
the adhesive member is a cured product of the film-like adhesive according to any one of claims 1 to 3.
7. A method for manufacturing a semiconductor device, comprising a step of bonding a semiconductor element and a supporting member using the film-like adhesive according to any one of claims 1 to 3.
8. A method of manufacturing a semiconductor device, comprising:
a step of attaching the film-like adhesive of the adhesive sheet according to claim 4 or 5 to a semiconductor wafer;
a step of manufacturing a plurality of singulated semiconductor elements with film-like adhesive by dicing the semiconductor wafer to which the film-like adhesive is attached; a kind of electronic device with high-pressure air-conditioning system
And adhering the semiconductor element with the film-like adhesive to a supporting member.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020150430A JP2022044992A (en) | 2020-09-08 | 2020-09-08 | Film-like adhesive, adhesive sheet, semiconductor device and production method for the same |
| JP2020-150430 | 2020-09-08 | ||
| PCT/JP2021/032482 WO2022054718A1 (en) | 2020-09-08 | 2021-09-03 | Filmy adhesive, adhesive sheet, and semiconductor device and production method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116670240A true CN116670240A (en) | 2023-08-29 |
Family
ID=80631811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180054989.2A Pending CN116670240A (en) | 2020-09-08 | 2021-09-03 | Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2022044992A (en) |
| KR (1) | KR20230062565A (en) |
| CN (1) | CN116670240A (en) |
| TW (1) | TW202214801A (en) |
| WO (1) | WO2022054718A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
| JP2008074928A (en) * | 2006-09-20 | 2008-04-03 | Hitachi Chem Co Ltd | Adhesive film for semiconductor and semiconductor device by using the same |
| JP2009209345A (en) * | 2008-02-06 | 2009-09-17 | Hitachi Chem Co Ltd | Pressure-sensitive adhesive sheet |
| JP6597280B2 (en) * | 2015-12-21 | 2019-10-30 | 日立化成株式会社 | Die bonding film |
| JP7255146B2 (en) * | 2018-11-22 | 2023-04-11 | 株式会社レゾナック | FILM ADHESIVE, ADHESIVE SHEET, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
-
2020
- 2020-09-08 JP JP2020150430A patent/JP2022044992A/en active Pending
-
2021
- 2021-09-03 KR KR1020237008244A patent/KR20230062565A/en unknown
- 2021-09-03 CN CN202180054989.2A patent/CN116670240A/en active Pending
- 2021-09-03 WO PCT/JP2021/032482 patent/WO2022054718A1/en active Application Filing
- 2021-09-06 TW TW110132991A patent/TW202214801A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022054718A1 (en) | 2022-03-17 |
| TW202214801A (en) | 2022-04-16 |
| JP2022044992A (en) | 2022-03-18 |
| KR20230062565A (en) | 2023-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7298613B2 (en) | Semiconductor device manufacturing method, thermosetting resin composition, and dicing/die bonding integrated film | |
| JP2024010048A (en) | Semiconductor device | |
| TWI830861B (en) | Film adhesive, adhesive sheet, semiconductor device and manufacturing method thereof | |
| JP7255146B2 (en) | FILM ADHESIVE, ADHESIVE SHEET, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | |
| WO2020129996A1 (en) | Film-form adhesive, adhesive sheet, and semiconductor device and manufacturing method thereof | |
| WO2020065783A1 (en) | Film-shaped adhesive, adhesive sheet, semiconductor device, and production method for semiconductor device | |
| CN116670240A (en) | Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing same | |
| CN113646871A (en) | Method for manufacturing semiconductor device, die bonding film, and dicing die bonding integrated adhesive sheet | |
| WO2023157846A1 (en) | Film-like adhesive and method for producing same, integrated dicing/die bonding film, and semiconductor device and method for producing same | |
| WO2023047594A1 (en) | Film adhesive, two-in-one dicing and die-bonding film, semiconductor device, and manufacturing method for same | |
| WO2023152837A1 (en) | Film-form adhesive, dicing and die-bonding two-in-one film, semiconductor device, and method for manufacturing same | |
| WO2022149581A1 (en) | Adhesive agent composition, film-form adhesive agent, dicing/die-bonding integrated film, semiconductor device, and method for manufacturing same | |
| WO2022149582A1 (en) | Film-like adhesive, integrated dicing/die bonding film, semiconductor device and method for producing same | |
| JP7435458B2 (en) | Film adhesive, adhesive sheet, semiconductor device and manufacturing method thereof | |
| CN116783258A (en) | Film-like adhesive, dicing die-bonding integrated film, and semiconductor device and method for manufacturing same | |
| JP2022044991A (en) | Die bonding film, adhesive sheet, semiconductor device and method for manufacturing the same | |
| CN116762169A (en) | Semiconductor device, method for manufacturing the same, thermosetting resin composition, adhesive film, and dicing die-bonding integrated film | |
| TW202414550A (en) | Semiconductor device manufacturing method, adhesive layer and die-cut die-bonding integrated film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |