WO2020136904A1 - Adhesive film, integrated dicing/die bonding film, and method for producing semiconductor package - Google Patents
Adhesive film, integrated dicing/die bonding film, and method for producing semiconductor package Download PDFInfo
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- WO2020136904A1 WO2020136904A1 PCT/JP2018/048593 JP2018048593W WO2020136904A1 WO 2020136904 A1 WO2020136904 A1 WO 2020136904A1 JP 2018048593 W JP2018048593 W JP 2018048593W WO 2020136904 A1 WO2020136904 A1 WO 2020136904A1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present disclosure relates to an adhesive film, a dicing/die bonding integrated film, and a method for manufacturing a semiconductor package.
- silver paste has been mainly used for joining the semiconductor element and the supporting member in the manufacturing process of the semiconductor device.
- problems tend to occur in wire bonding due to the protrusion of the silver paste or the inclination of the semiconductor elements.
- an adhesive composition is used instead of the silver paste, it is difficult to make the thickness of the adhesive layer sufficiently uniform, and there are problems such as the occurrence of voids (voids) in the adhesive layer.
- Patent Document 1 discloses a sheet for both dicing and die bonding, which includes a base material, a wire embedding layer, and an insulating layer. By performing dicing with the insulating layer of this sheet and the wafer bonded together, the semiconductor wafer and the wire embedding layer are separated. The semiconductor element and the supporting member are joined by thermocompression bonding the semiconductor element to the supporting member via the wire embedding layer.
- a stacked MCP Multi Chip Package
- the stacked MCP include a wire-embedded semiconductor package and a chip-embedded semiconductor package (see Patent Document 2).
- the adhesive film used to manufacture the wire-embedded semiconductor package is called FOW (Film Over Wire). It is called FOD (Film Over Die) as an adhesive film used to manufacture chip-embedded semiconductor packages.
- the pressing force per unit area tends to become excessively large in the thermocompression bonding process in the manufacturing process of semiconductor packages. This may cause a phenomenon (hereinafter, referred to as “bleed”) in which the adhesive composition forming the adhesive film protrudes from the semiconductor element, or the adhesive film is excessively crushed to cause electrical failure.
- bleed a phenomenon in which the adhesive composition forming the adhesive film protrudes from the semiconductor element, or the adhesive film is excessively crushed to cause electrical failure.
- the FOD composition is changed to improve the fluidity in the thermocompression bonding process in order to improve the embedding property of the adhesive film (FOD) used for manufacturing the chip-embedding type semiconductor package
- bleeding becomes remarkable. ..
- the protruding adhesive composition may rise up to the upper surface of the semiconductor element, which may cause electrical failure or wire bonding failure. That is, the conventional adhesive film cannot always sufficiently achieve both excellent embeddability for a semiconductor element and suppression of bleed in the process of manufacturing a chip embedded type package, and there is room for improvement in this
- the present disclosure provides an adhesive film including an adhesive layer made of a thermosetting resin composition, which has excellent embeddability in a semiconductor element and can sufficiently suppress bleeding in a thermocompression bonding process. To do.
- the present disclosure provides a dicing/die bonding integrated film including the adhesive layer of the adhesive film, and a method for manufacturing a semiconductor package using the film.
- the adhesive film according to the present disclosure includes an adhesive layer made of a thermosetting resin composition, the shear viscosity of the adhesive layer at 40° C. is ⁇ 40, and the shear viscosity of the adhesive layer at 80° C. is ⁇ .
- 80 is eta 80 is 2500 ⁇ 4500Pa ⁇ s
- the ratio of eta 40 for ⁇ 80 ( ⁇ 40 / ⁇ 80 ) is 25-200.
- the shear viscosity ⁇ 40 at 40° C. of the adhesive layer is, for example, 100,000 Pa ⁇ s or more.
- the present inventors have examined the mechanism of bleeding in the thermocompression bonding process in the process of manufacturing a chip-embedded semiconductor package. As a result, the following findings were obtained. That is, conventionally, it has been considered that bleeding mainly occurs as the adhesive layer is gradually crushed by the pressing force applied to the adhesive layer. However, rather than this, it was found that the impact of the tool for applying a pressing force when the tool descends and comes into contact with the object is the main cause of bleeding.
- the adhesive film according to the present disclosure is designed based on this finding, and the shear viscosity ⁇ 40 of the adhesive layer at 40° C. is set to 25 to 200 times the shear viscosity ⁇ 80 at 80° C.
- the shear viscosity ⁇ 40 at 40° C. By increasing the shear viscosity ⁇ 40 at 40° C., the impact at the initial stage of the thermocompression bonding process, that is, the stage where the tool descends and contacts the object, and the stage where the adhesive layer is not sufficiently heated It is possible to sufficiently suppress the bleeding caused by.
- the shear viscosity ⁇ 80 of the adhesive layer at 80° C. is 2500 to 4500 Pa ⁇ s, excellent embeddability can be achieved.
- the adhesive film according to the present disclosure is useful for manufacturing a chip-embedded semiconductor package. That is, in the manufacturing process of the chip-embedded semiconductor package, the adhesive layer can be used to embed the first semiconductor element on the substrate and to bond the second semiconductor element to the substrate.
- thermosetting resin composition contains a phenol resin having a softening point of more than 40°C and less than 70°C.
- the content of the epoxy resin which is liquid at 25° C. is less than 40 mass %.
- the thermosetting resin composition contains an epoxy resin having an alicyclic structure, a curing agent (for example, phenol resin), and an elastomer (for example, acrylic resin).
- the thermosetting resin composition contains an inorganic filler.
- thermosetting resin composition contains a curing accelerator.
- the adhesive film of the present disclosure may be the adhesive layer itself or may be provided with a base film provided on one surface of the adhesive layer from the viewpoint of ease of use. Further, the dicing/die-bonding integrated film may be formed by combining the adhesive layer and the pressure-sensitive adhesive layer. That is, the dicing/die-bonding integrated film according to the present disclosure includes an adhesive layer of the adhesive film according to the present disclosure and a pressure-sensitive adhesive layer provided on one surface of the adhesive layer, and if necessary. A protective film may be further provided so as to cover the adhesive layer.
- the present disclosure provides a method for manufacturing a semiconductor package using the above dicing/die bonding integrated film.
- a chip-embedded semiconductor package is manufactured through the following steps.
- the first semiconductor element can be appropriately embedded in the adhesive piece and bleeding can be sufficiently suppressed in the thermocompression bonding process.
- an adhesive film including an adhesive layer made of a thermosetting resin composition, which has excellent embeddability in a semiconductor element and can sufficiently suppress bleeding in a thermocompression bonding process.
- a dicing/die-bonding integrated film including the adhesive layer of the adhesive film, and a method for manufacturing a semiconductor package using the film.
- FIG. 1 is a sectional view schematically showing an example of a semiconductor package.
- FIG. 2 is a cross-sectional view schematically showing an example of a laminated body including an adhesive piece and a second semiconductor element.
- FIG. 3 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG.
- FIG. 4 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG.
- FIG. 5 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG.
- FIG. 6 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG. 7(a) to 7(e) are cross-sectional views schematically showing a process of manufacturing a laminated body including the adhesive piece and the second semiconductor element.
- FIG. 1 is a sectional view schematically showing a chip-embedded semiconductor package according to this embodiment.
- a semiconductor package 100 shown in this figure includes a substrate 10, a first semiconductor element Wa mounted on the surface of the substrate 10, and a first sealing layer 20 that seals the first semiconductor element Wa. , A second semiconductor element Wb arranged above the first semiconductor element Wa, and a second sealing layer 40 sealing the second semiconductor element Wb.
- the substrate 10 has circuit patterns 10a and 10b on its surface. From the viewpoint of suppressing the warpage of the semiconductor package 100, the thickness of the substrate 10 is, for example, 90 to 180 ⁇ m, and may be 90 to 140 ⁇ m.
- the substrate 10 may be an organic substrate or a metal substrate such as a lead frame.
- the first semiconductor element Wa is a controller chip for driving the semiconductor package 100.
- the first semiconductor element Wa is adhered onto the circuit pattern 10a via an adhesive 15, and is also connected to the circuit pattern 10b via a first wire 11.
- the shape of the first semiconductor element Wa in a plan view is, for example, a rectangle (square or rectangle).
- the length of one side of the first semiconductor element Wa is, for example, 6 mm or less, and may be 2 to 5 mm or 1 to 4 mm.
- the thickness of the first semiconductor element Wa is, for example, 10 to 150 ⁇ m, and may be 20 to 100 ⁇ m.
- the second semiconductor element Wb has a larger area than the first semiconductor element Wa.
- the second semiconductor element Wb is mounted on the substrate 10 via the first sealing layer 20 so that the entire first semiconductor element Wa and a part of the circuit pattern 10b are covered.
- the shape of the second semiconductor element Wb in a plan view is, for example, a rectangle (square or rectangle).
- the length of one side of the second semiconductor element Wb is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm.
- the thickness of the second semiconductor element Wb is, for example, 10 to 170 ⁇ m, and may be 20 to 120 ⁇ m.
- the second semiconductor element Wb is connected to the circuit pattern 10b via the second wire 12 and is sealed by the second sealing layer 40.
- the first sealing layer 20 is made of a cured product of the adhesive piece 20P (see FIG. 2). Note that, as shown in FIG. 2, the adhesive piece 20P and the second semiconductor element Wb have substantially the same size.
- the laminated body 30 illustrated in FIG. 2 includes the adhesive piece 20P and the second semiconductor element Wb, and is also referred to as a semiconductor element with an adhesive. The laminated body 30 is manufactured through a dicing process and a pickup process as described later (see FIG. 7).
- ⁇ Semiconductor package manufacturing method> A method of manufacturing the semiconductor package 100 will be described. First, as shown in FIG. 3, a structure 50 including the substrate 10 and the first semiconductor element Wa mounted on the substrate 10 is manufactured. That is, the first semiconductor element Wa is arranged on the surface of the substrate 10 via the adhesive 15. After that, the first semiconductor element Wa and the circuit pattern 10b are electrically connected by the first wire 11.
- the adhesive piece 20P of the separately prepared laminate 30 is pressed against the substrate 10.
- the thickness of the adhesive piece 20P may be appropriately set according to the thickness of the first semiconductor element Wa and the like, and may be, for example, 20 to 200 ⁇ m, 30 to 200 ⁇ m or 40 to 150 ⁇ m. ..
- the distance G in FIG. 5 is preferably, for example, 50 ⁇ m or more, and may be 50 to 75 ⁇ m or 50 to 80 ⁇ m.
- the pressure bonding of the adhesive piece 20P to the substrate 10 is preferably carried out, for example, under conditions of 80 to 180° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds.
- the adhesive piece 20P is cured by heating. This curing treatment is preferably carried out, for example, under conditions of 60 to 175° C. and 0.01 to 1.0 MPa for 5 minutes or more.
- the first semiconductor element Wa is sealed with the cured product (first sealing layer 20) of the adhesive piece 20P (see FIG. 6).
- the curing process of the adhesive piece 20P may be performed in a pressurized atmosphere from the viewpoint of reducing voids.
- the second semiconductor element Wb is sealed by the second sealing layer 40, whereby the semiconductor package 100 is completed. (See FIG. 1).
- the dicing/die-bonding integrated film 8 (hereinafter, referred to as “film 8” in some cases) is placed in a predetermined device (not shown).
- the film 8 includes the base material layer 1, the pressure-sensitive adhesive layer 2, and the adhesive layer 20A (adhesive film) in this order.
- the base material layer 1 is, for example, a polyethylene terephthalate film (PET film).
- PET film polyethylene terephthalate film
- the semiconductor wafer W is, for example, a thin semiconductor wafer having a thickness of 10 to 100 ⁇ m.
- the semiconductor wafer W may be single crystal silicon, polycrystal silicon, various ceramics, or a compound semiconductor such as gallium arsenide.
- the film 8 is attached so that the adhesive layer 20A is in contact with one surface of the semiconductor wafer W.
- This step is preferably carried out under temperature conditions of 50 to 120°C, more preferably 60 to 100°C.
- the temperature is 50° C. or higher, good adhesion of the semiconductor wafer W to the adhesive layer 20A can be obtained, and when the temperature is 120° C. or lower, the adhesive layer 20A may excessively flow in this step. Suppressed.
- the semiconductor wafer W, the adhesive layer 2 and the adhesive layer 20A are diced.
- the semiconductor wafer W is diced into individual semiconductor elements Wb.
- the adhesive layer 20A is also diced into individual adhesive pieces 20P. Examples of the dicing method include a method using a rotary blade or a laser.
- the semiconductor wafer W may be thinned by grinding the semiconductor wafer W prior to dicing the semiconductor wafer W.
- the pressure-sensitive adhesive layer 2 is, for example, a UV-curable type
- the pressure-sensitive adhesive layer 2 is cured by irradiating the pressure-sensitive adhesive layer 2 with ultraviolet rays as shown in FIG.
- the adhesive force between 2 and the adhesive piece 20P is reduced.
- the semiconductor element Wa is separated from each other by expanding the base material layer 1 at room temperature or under cooling conditions, and the semiconductor element Wa is separated from each other, and is pushed up by the needle 42 so that the adhesive layer 2 is removed.
- the adhesive piece 20P of the laminated body 30 is peeled off, and the laminated body 30 is suctioned and picked up by the suction collet 44.
- the laminated body 30 thus obtained is used for manufacturing the semiconductor package 100, as shown in FIG.
- the film 8 includes the base material layer 1 (for example, PET film), the pressure-sensitive adhesive layer 2, and the adhesive layer 20A (adhesive film) in this order.
- the method for producing the film 8 includes a step of applying a varnish of a thermosetting resin composition containing an epoxy resin or the like on a film (not shown), and an adhesive by heating and drying the applied varnish at 50 to 150° C. It includes a step of forming the layer 20A and a step of attaching the adhesive layer 20A and the pressure-sensitive adhesive layer 2 to each other.
- the shear viscosity ⁇ 80 of the adhesive layer 20A at 80° C. is 2500 to 4500 Pa ⁇ s.
- the shear viscosity ⁇ 80 is 2500 Pa ⁇ s or more, excellent embeddability can be achieved, while when it is 4500 Pa ⁇ s or less, bleeding can be suppressed.
- the lower limit of the shear viscosity ⁇ 80 may be 2800 Pa ⁇ s or 3000 Pa ⁇ s, and the upper limit thereof may be 4300 Pa ⁇ s or 4000 Pa ⁇ s.
- the shear viscosity ⁇ 40 of the adhesive layer 20A at 40° C. is preferably 100,000 Pa ⁇ s or more.
- the shear viscosity ⁇ 40 is 100,000 Pa ⁇ s or more, bleeding due to the impact of the crimping tool in the initial stage of the thermocompression bonding process can be suppressed.
- the lower limit of the shear viscosity ⁇ 80 may be 120,000 Pa ⁇ s or 150,000 Pa ⁇ s, and the upper limit thereof is, for example, 800,000 Pa ⁇ s, 600,000 Pa ⁇ s or 400,000 Pa ⁇ s. May be.
- the ratio ( ⁇ 40 / ⁇ 80 ) of ⁇ 40 to ⁇ 80 of the adhesive layer 20A is 25 to 200.
- ⁇ 40 / ⁇ 80 is 25 to 200, both excellent embedding property and suppression of bleed can be achieved at a sufficiently high level.
- the lower limit value of ⁇ 40 / ⁇ 80 may be 28 or 30, and the upper limit value may be 190 or 170.
- the adhesive layer 20A is formed through, for example, a step of applying a varnish containing an epoxy resin, a curing agent, and an elastomer on a film, and a step of drying a coating film formed on the film.
- the varnish may further contain an inorganic filler, a curing accelerator and the like, if necessary.
- the varnish can be prepared by mixing or kneading materials such as epoxy resin in a solvent. Mixing or kneading can be performed by using an ordinary stirrer, a raker, a disperser such as a three-roll mill, a ball mill and the like, and appropriately combining these. The details of the varnish will be described later.
- the film to which the varnish is applied is not particularly limited, and examples thereof include polyester film, polypropylene film (OPP film and the like), polyethylene terephthalate film, polyimide film, polyetherimide film, polyether naphthalate film, methylpentene film.
- a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method and a curtain coating method.
- the heating and drying conditions may be such that the solvent used is sufficiently volatilized, and for example, heating at 50 to 150° C. for 1 to 30 minutes can be performed.
- the heat drying may be carried out by gradually raising the temperature within the range of 50 to 150°C.
- the film 8 can be obtained by bonding the laminated film obtained as described above and the dicing film (a laminated body of the base material layer 1 and the pressure-sensitive adhesive layer 2).
- the base layer 1 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film.
- the base material layer 1 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.
- the pressure-sensitive adhesive layer 2 may be a UV curable type or a pressure sensitive type.
- the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 2 a pressure-sensitive adhesive that has been conventionally used for a dicing film may be used.
- the thickness of the pressure-sensitive adhesive layer 2 is, for example, from 60 to 200 ⁇ m, and may be from 70 to 170 ⁇ m, from the viewpoint of economy and handleability of the film.
- the varnish for forming the adhesive layer 20A will be described in detail.
- the adhesive piece 20P is an individual piece of the adhesive layer 20A, and both are made of the same thermosetting resin composition.
- the adhesive layer 20A and the adhesive piece 20P are in a semi-cured (B stage) state because they have undergone heat treatment for volatilizing the solvent, and are in a completely cured product (C stage) state by the subsequent curing treatment.
- the varnish for forming the adhesive layer contains the epoxy resin, the curing agent, and the elastomer, and further contains the inorganic filler, the curing accelerator, and the like, if necessary.
- the solvent for preparing the varnish is not limited as long as it can uniformly dissolve, knead or disperse the above components, for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, a ketone solvent such as cyclohexanone, dimethylformamide, dimethyl.
- Acetamide, N-methylpyrrolidone, toluene, xylene can be used. It is preferable to use methyl ethyl ketone or cyclohexanone since the drying speed is fast and the price is low.
- the structure of the epoxy resin is not particularly limited, but those having an alicyclic structure are preferable from the viewpoint of compatibility.
- the content of the epoxy resin having an alicyclic structure is, for example, 40 to 20% by mass, 20 to 10% by mass or 10 to 5% by mass based on the total mass of the epoxy resin contained in the adhesive layer 20A. May be.
- the content of the epoxy resin which is liquid at 25° C. is 40% by mass based on the total mass of the epoxy resin contained in the adhesive layer 20A. It is preferably less than 30% by mass, more preferably less than 30% by mass, and may be less than 14% by mass or less than 9% by mass.
- epoxy resins include, for example, dicyclopentadiene type epoxy resins HP-7200L (manufactured by DIC Corporation), HP-7200 (manufactured by DIC Corporation), XD-1000 (manufactured by Nippon Kayaku Co., Ltd.), Celoxide 2021P (manufactured by Daicel Corporation), Celoxide 20281 (manufactured by Daicel Corporation), Syna-Epoxy 28 (manufactured by SYANASIA), bis A type epoxy resin YD-128 (manufactured by Mitsubishi Chemical Corporation), bis F type epoxy.
- Resin EXA-830-CRP manufactured by DIC Corporation may be mentioned. These may be used alone or in combination of two or more.
- Aromatic epoxy resins may be used as thermosetting resins.
- the aromatic epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F novolac type epoxy resin.
- the curing agent examples include phenolic resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. Of these, a phenol resin is preferable and there is no particular limitation from the viewpoint of reactivity and stability over time. From the viewpoint of setting the shear viscosity ⁇ 40 at 40° C. of the adhesive layer high and the shear viscosity ⁇ 80 at 80° C. low, it is preferable to use a phenol resin having a softening point of more than 40° C. and less than 60° C. The softening point here means a value measured by the ring and ball method.
- phenolic resins include, for example, Phenolite KA and TD series manufactured by DIC Corporation, Milex XLC-series and XL series manufactured by Mitsui Chemicals, Inc. (for example, Milex XLC-LL), and Air Water (stock).
- HE series for example, HE100C-30
- MEHC-7800 series for example, MEHC-7800-4S manufactured by Meiwa Kasei Co., Ltd.
- MEHC-7800 series for example, MEHC-7800-4S
- thermogravimetric analyzer TGA It is preferable that the (temperature rising rate: 5° C./min, atmosphere: nitrogen) is less than 5 mass %.
- the epoxy resin and the phenol resin are blended so that the equivalent ratio of the epoxy equivalent and the hydroxyl equivalent is preferably 0.30/0.70 to 0.70/0.30, and more preferably 0. 35/0.65 to 0.65/0.35, more preferably 0.40/0.60 to 0.60/0.40, and particularly preferably 0.45/0.55 to 0.55/0. 45.
- the compounding ratio is within the above range, it is easy to achieve both a curability and a fluidity at sufficiently high levels.
- elastomer examples include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene and carboxy-modified acrylonitrile.
- an acrylic resin is preferable as the elastomer, and further obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group such as glycidyl acrylate or glycidyl methacrylate as a crosslinkable functional group.
- An acrylic resin such as an epoxy group-containing (meth)acrylic copolymer is more preferable.
- the acrylic resins the epoxy group-containing (meth)acrylic acid ester copolymer and the epoxy group-containing acrylic rubber are preferable, and the epoxy group-containing acrylic rubber is more preferable.
- the epoxy group-containing acrylic rubber is a rubber having an epoxy group, which is mainly composed of an acrylic ester and is mainly composed of a copolymer such as butyl acrylate and acrylonitrile or a copolymer such as ethyl acrylate and acrylonitrile.
- the acrylic resin may have not only an epoxy group but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group and a carboxyl group.
- acrylic resin Commercially available products of acrylic resin are SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, SG-P3 manufactured by Nagase Chemtech Co., Ltd. (product name, acrylic rubber, weight) Average molecular weight: 800,000, Tg: 12° C., solvent is cyclohexanone, etc.
- the glass transition temperature (Tg) of the acrylic resin is preferably -50 to 50°C, more preferably -30 to 30°C.
- the weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000.
- Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene.
- the amount of the acrylic resin contained in the adhesive layer 20A is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass, based on 100 parts by mass of the total amount of the epoxy resin and the epoxy resin curing agent. .. Within this range, control of fluidity during molding, handling at high temperature, and embedding property can be further improved.
- inorganic filler examples include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride and crystallinity.
- examples thereof include silica and amorphous silica. These may be used alone or in combination of two or more. From the viewpoint of improving the thermal conductivity of the adhesive layer 20A, it is preferable to contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica or amorphous silica as the inorganic filler.
- the average particle size of the inorganic filler is preferably 0.005 ⁇ m to 0.5 ⁇ m, more preferably 0.05 to 0.3 ⁇ m, from the viewpoint of improving adhesiveness.
- the surface of the inorganic filler is preferably chemically modified from the viewpoint of compatibility with a solvent and a resin component and adhesive strength. Suitable materials for chemically modifying the surface include silane coupling agents. Examples of the functional group of the silane coupling agent include vinyl group, acryloyl group, epoxy group, mercapto group, amino group, diamino group, alkoxy group and ethoxy group.
- the content of the inorganic filler is 10 to 90 relative to 100 parts by mass of the resin component of the adhesive layer 20A.
- the amount is preferably parts by mass, more preferably 10 to 50 parts by mass.
- the content of the inorganic filler is 10 parts by mass or more, the dicing property of the adhesive layer 20A is likely to be improved, and sufficient adhesive force is easily exhibited after curing.
- the content of the inorganic filler is 90 parts by mass or less, it is easy to secure sufficient fluidity of the adhesive layer 20A, and it is possible to prevent the elastic modulus after curing from becoming excessively high.
- curing accelerator examples include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of appropriate reactivity, imidazole compounds are preferable. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used alone or in combination of two or more.
- the content of the curing accelerator in the adhesive layer 20A is preferably 0.04 to 3 parts by mass, more preferably 0.04 to 0.2 part by mass, based on 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent. .. When the addition amount of the curing accelerator is within this range, both curability and reliability can be achieved.
- Examples 1-5 and Comparative Examples 1-2 The following materials were mixed in the mixing ratios (parts by mass) shown in Tables 1 and 2 to prepare varnishes. Cyclohexanone was used as the solvent, and the solid content ratio of the varnish was 40% by mass. The varnish was filtered with a 100-mesh filter and vacuum degassed. As a film to which the varnish was applied, a polyethylene terephthalate (PET) film (thickness 38 ⁇ m) subjected to a mold release treatment was prepared. The varnish after vacuum defoaming was applied on the surface of the PET film that had been subjected to the release treatment. The applied varnish was heat-dried in two steps of 90° C. for 5 minutes and then 140° C. for 5 minutes.
- PET polyethylene terephthalate
- a laminated film including a PET film and a B-stage state (semi-cured state) adhesive layer (thickness 110 ⁇ m) formed on the surface thereof was produced. ..
- MEHC-7841-4S (trade name, manufactured by Meiwa Kasei Co., Ltd., phenol aralkyl resin, softening point: 65° C.) ⁇ (B2)... HE-100C-30: (trade name, manufactured by Air Water Co., Ltd., phenyl aralkyl type phenol resin, softening point: 75° C.) ⁇ Elastomer> -(C1)... SG-P3 solvent modified product (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone) -(C2)...
- SG-708-6 (Sample name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight 700,000)
- SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 ⁇ m)
- ⁇ Curing accelerator> ⁇ Curazole 2PZ-CN: (trade name, 1-cyanoethyl-2-phenylimidazole manufactured by Shikoku Chemicals Co., Ltd.)
- ⁇ Measurement of shear viscosity> The adhesive layer (thickness 110 ⁇ m) was cut into a predetermined size to prepare four adhesive pieces. A sample having a thickness of 440 ⁇ m was prepared by laminating the four pieces of adhesive on a hot plate at 60° C. using a rubber roll. This sample was punched with a punch having a diameter of 9 mm, and the shear viscosity was measured under the following conditions using a shear viscometer (manufactured by TA: trade name ARES-G2). The results are shown in Tables 1 and 2. ⁇ Measurement frequency: 10Hz ⁇ Raising rate: 10°C/min ⁇ Measuring temperature: 35-130°C ⁇ Axial force: 100gf
- a structure used for evaluation of embedding property including a substrate and a first semiconductor element mounted on the surface thereof, was prepared as follows. That is, a film adhesive HR9004-10 (trade name, manufactured by Hitachi Chemical Co., Ltd., thickness 10 ⁇ m) was attached to a semiconductor wafer (diameter: 8 inches, thickness: 50 ⁇ m) at 70° C. A semiconductor element with adhesive (first semiconductor element) was obtained by dicing the semiconductor wafer and the film adhesive into a 4.8 ⁇ 5.7 mm square. The semiconductor element with the adhesive was pressure-bonded to the evaluation substrate under the conditions of 120° C., 0.20 MPa, and 2 seconds. A substrate (total thickness: 260 ⁇ m) having a surface coated with a solder resist AUS308 (trade name, manufactured by Taiyo Nippon Sanso Co., Ltd.) was used as an evaluation substrate.
- a film adhesive HR9004-10 trade name, manufactured by Hitachi Chemical Co., Ltd., thickness 10 ⁇ m
- a semiconductor element with adhesive was obtained
- the adhesive layers (thickness 110 ⁇ m) according to the examples and the comparative examples were attached to semiconductor wafers (diameter: 8 inches, thickness 100 ⁇ m) at 70° C.
- semiconductor wafers diameter: 8 inches, thickness 100 ⁇ m
- a semiconductor element with an adhesive piece was pressure-bonded to the position where the first semiconductor element was mounted in the structure.
- the pressure bonding conditions were 120° C., 0.20 MPa, and 1.5 seconds.
- the alignment was performed so that the first semiconductor element was embedded in the central position of the adhesive piece.
- the evaluation sample thus prepared was observed for the presence or absence of voids with an ultrasonic digital image diagnostic apparatus (Insight Co., Ltd., probe: 75 MHz). If voids were observed, the voids per unit area were observed. Area was calculated, and the results of these analyzes were evaluated as embeddability.
- the evaluation criteria are as follows. The results are shown in Tables 1 and 2. A: No void was observed. B: Voids were observed, but the ratio was less than 5 area %. C: Voids were observed, and the ratio was 5 area% or more.
- a structure used for evaluation of bleeding including a substrate and a first semiconductor element mounted on the surface thereof, was prepared as follows. That is, a film adhesive HR9004-10 (trade name, manufactured by Hitachi Chemical Co., Ltd., thickness 10 ⁇ m) was attached to a semiconductor wafer (diameter: 8 inches, thickness: 50 ⁇ m) at 70° C. A semiconductor element with adhesive (first semiconductor element) was obtained by dicing the semiconductor wafer and the film-like adhesive into a 2.1 ⁇ 4.8 mm square. The semiconductor element with the adhesive was pressure-bonded to the evaluation substrate under the conditions of 120° C., 0.20 MPa and 2 seconds. A substrate (total thickness: 260 ⁇ m) having a surface coated with a solder resist AUS308 (trade name, manufactured by Taiyo Nippon Sanso Co., Ltd.) was used as an evaluation substrate.
- a film adhesive HR9004-10 trade name, manufactured by Hitachi Chemical Co., Ltd., thickness 10 ⁇ m
- a semiconductor element with adhesive was obtained by
- the adhesive layers (thickness 110 ⁇ m) according to the examples and the comparative examples were attached to semiconductor wafers (diameter: 8 inches, thickness 100 ⁇ m) at 70° C.
- semiconductor wafers diameter: 8 inches, thickness 100 ⁇ m
- Example 2 of Patent Document 2 (temperature at which shear viscosity becomes 5000 Pa ⁇ s: 63° C.) was performed. That is, the same material as that used in Example 2 of Patent Document 2 was used, and a film adhesive according to Reference Example was produced in the same manner as Example 2 of Patent Document 2.
- an adhesive film including an adhesive layer made of a thermosetting resin composition, which has excellent embeddability to a semiconductor element and can sufficiently suppress bleeding in a thermocompression bonding process.
- a film is provided.
- a dicing/die-bonding integrated film including the adhesive layer of the adhesive film, and a method for manufacturing a semiconductor package using the film.
- Adhesive layer 8... Dicing/die bonding integrated film, 10... Substrate, 20... First sealing layer (cured product of adhesive piece), 20A... Adhesive layer (adhesive film), 20P... Adhesion Agent piece, 30... Laminated body, 50... Structure, 100... Semiconductor package, W... Wafer, Wa... First semiconductor element, Wb... Second semiconductor element
Abstract
Description
・熱硬化性樹脂組成物が40℃超70℃未満の軟化点を有するフェノール樹脂を含有する。
・25℃において液状であるエポキシ樹脂の含有率(熱硬化性樹脂組成物に含まれるエポキシ樹脂の全質量基準)を40質量%未満とする。
・熱硬化性樹脂組成物が脂環式構造を有するエポキシ樹脂と、硬化剤(例えば、フェノール樹脂)と、エラストマ(例えば、アクリル樹脂)とを含む。
・熱硬化性樹脂組成物が無機フィラーを含む。
・熱硬化性樹脂組成物が硬化促進剤を含む。 In order for the adhesive layer to satisfy the above conditions for η 40 and η 80 , for example, one or more of the following items relating to the composition of the thermosetting resin composition forming the adhesive layer may be used. You can adopt the item.
-The thermosetting resin composition contains a phenol resin having a softening point of more than 40°C and less than 70°C.
The content of the epoxy resin which is liquid at 25° C. (based on the total mass of the epoxy resin contained in the thermosetting resin composition) is less than 40 mass %.
The thermosetting resin composition contains an epoxy resin having an alicyclic structure, a curing agent (for example, phenol resin), and an elastomer (for example, acrylic resin).
-The thermosetting resin composition contains an inorganic filler.
-The thermosetting resin composition contains a curing accelerator.
・基板と、基板の表面上にマウントされた第1の半導体素子とを備える構造体を準備する工程。
・本開示に係るダイシング・ダイボンディング一体型フィルムの接着剤層とウェハとを貼り合わせる工程。
・接着剤層に貼り合わされた状態のウェハを複数の第2の半導体素子に個片化する工程。
・接着剤層が個片化されることによって形成された接着剤片と第2の半導体素子と含む積層体を粘着剤層からピックアップする工程。
・第1の半導体素子が接着剤片に埋め込まれるように、基板に対して上記積層体を熱圧着する工程。
・加熱処理によって接着剤片を硬化させる工程。 The present disclosure provides a method for manufacturing a semiconductor package using the above dicing/die bonding integrated film. For example, a chip-embedded semiconductor package is manufactured through the following steps.
A step of preparing a structure including a substrate and a first semiconductor element mounted on the surface of the substrate.
A step of bonding the adhesive layer of the dicing/die bonding integrated film according to the present disclosure to the wafer.
A step of dividing the wafer bonded to the adhesive layer into a plurality of second semiconductor elements.
A step of picking up from the pressure-sensitive adhesive layer a laminate including the adhesive piece formed by dividing the adhesive layer into individual pieces and the second semiconductor element.
A step of thermocompression-bonding the above laminated body to the substrate so that the first semiconductor element is embedded in the adhesive piece.
-A step of curing the adhesive piece by heat treatment.
図1は本実施形態に係るチップ埋込型半導体パッケージを模式的に示す断面図である。この図に示す半導体パッケージ100は、基板10と、基板10の表面上にマウントされた第1の半導体素子Waと、第1の半導体素子Waを封止している第1の封止層20と、第1の半導体素子Waの上方に配置された第2の半導体素子Wbと、第2の半導体素子Wbを封止している第2の封止層40とを備える。 <Semiconductor package>
FIG. 1 is a sectional view schematically showing a chip-embedded semiconductor package according to this embodiment. A
半導体パッケージ100の製造方法について説明する。まず、図3に示すように、基板10と、これにマウントされた第1の半導体素子Waとを備える構造体50を作製する。すなわち、基板10の表面上に接着剤15を介して第1の半導体素子Waを配置する。その後、第1の半導体素子Waと回路パターン10bとを第1のワイヤ11で電気的に接続する。 <Semiconductor package manufacturing method>
A method of manufacturing the
図7(a)~図7(e)を参照しながら、図2に示す積層体30(接着剤付き半導体素子)の作製方法の一例について説明する。まず、ダイシング・ダイボンディング一体型フィルム8(以下、場合により「フィルム8」という。)を所定の装置(不図示)に配置する。フィルム8は、基材層1と粘着剤層2と接着剤層20A(接着フィルム)とをこの順序で備える。基材層1は、例えば、ポリエチレンテレフタレートフィルム(PETフィルム)である。半導体ウェハWは、例えば、厚さ10~100μmの薄型半導体ウェハである。半導体ウェハWは、単結晶シリコンであってもよいし、多結晶シリコン、各種セラミック、ガリウム砒素等の化合物半導体であってもよい。 <Method of manufacturing semiconductor device with adhesive>
An example of a method of manufacturing the laminated body 30 (semiconductor element with adhesive) shown in FIG. 2 will be described with reference to FIGS. 7A to 7E. First, the dicing/die-bonding integrated film 8 (hereinafter, referred to as “
図7(a)に示すダイシング・ダイボンディング一体型フィルム8及びその製造方法について説明する。上述のとおり、フィルム8は、基材層1(例えばPETフィルム)と粘着剤層2と接着剤層20A(接着フィルム)とをこの順序で備える。フィルム8の製造方法は、エポキシ樹脂等を含む熱硬化性樹脂組成物のワニスをフィルム(不図示)上に塗布する工程と、塗布されたワニスを50~150℃で加熱乾燥することによって接着剤層20Aを形成する工程と、接着剤層20Aと粘着剤層2とを貼り合わせる工程とを含む。 <Film with integrated dicing and die bonding and its manufacturing method>
The dicing/die-bonding
接着剤層20Aを形成するためのワニスについて詳細に説明する。なお、接着剤片20Pは接着剤層20Aを個片化したものであり、両者は同じ熱硬化性樹脂組成物からなる。接着剤層20A及び接着剤片20Pは、溶剤を揮散させるための加熱処理を経ているため半硬化(Bステージ)の状態であり、その後の硬化処理によって完全硬化物(Cステージ)状態となる。 <Varnish for forming adhesive layer>
The varnish for forming the
エポキシ樹脂としては、構造に特に制限はないが、相溶性の観点から、脂環式構造を有するものが好ましい。脂環式構造を有するエポキシ樹脂の含有率は接着剤層20Aに含まれるエポキシ樹脂の全質量基準で、例えば、40~20質量%であり、20~10質量%又は10~5質量%であってもよい。接着剤層20Aの40℃におけるずり粘度η40を所定値以上とする観点から、25℃において液状であるエポキシ樹脂の含有率は接着剤層20Aに含まれるエポキシ樹脂の全質量基準で40質量%未満であることが好ましく、30質量%未満であることがより好ましく、14質量%未満又は9質量%未満であってもよい。 (Epoxy resin)
The structure of the epoxy resin is not particularly limited, but those having an alicyclic structure are preferable from the viewpoint of compatibility. The content of the epoxy resin having an alicyclic structure is, for example, 40 to 20% by mass, 20 to 10% by mass or 10 to 5% by mass based on the total mass of the epoxy resin contained in the
硬化剤として、例えば、フェノール樹脂、エステル化合物、芳香族アミン、脂肪族アミン及び酸無水物が挙げられる。これらのうち、反応性及び経時安定性の観点から、フェノール樹脂が好ましく特に制限はない。接着剤層の40℃におけるずり粘度η40を高く設定し且つ80℃におけるずり粘度η80を低く設定する観点から、40℃超60℃未満の軟化点を有するフェノール樹脂を使用することが好ましい。なお、ここでいう軟化点は環球法で測定した値を意味する。 (Curing agent)
Examples of the curing agent include phenolic resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. Of these, a phenol resin is preferable and there is no particular limitation from the viewpoint of reactivity and stability over time. From the viewpoint of setting the shear viscosity η 40 at 40° C. of the adhesive layer high and the shear viscosity η 80 at 80° C. low, it is preferable to use a phenol resin having a softening point of more than 40° C. and less than 60° C. The softening point here means a value measured by the ring and ball method.
エラストマとして、例えば、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、シリコーン樹脂、ポリブタジエン、アクリロニトリル、エポキシ変性ポリブタジエン、無水マレイン酸変性ポリブタジエン、フェノール変性ポリブタジエン及びカルボキシ変性アクリロニトリルが挙げられる。 (Elastomer)
Examples of the elastomer include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene and carboxy-modified acrylonitrile.
無機フィラーとして、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミウィスカ、窒化ホウ素及び結晶性シリカ、非晶性シリカが挙げられる。これらは一種を単独で使用してもよいし、二種以上を併用してもよい。接着剤層20Aの熱伝導性を向上する観点から、無機フィラーとして、酸化アルミニウム、窒化アルミニウム、窒化ホウ素、結晶性シリカ又は非晶性シリカを含有することが好ましい。接着剤層20Aの溶融粘度の調整及び接着剤組成物にチキソトロピック性を付与する観点からは、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、結晶性シリカ又は非晶性シリカを使用することが好ましい。 (Inorganic filler)
Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride and crystallinity. Examples thereof include silica and amorphous silica. These may be used alone or in combination of two or more. From the viewpoint of improving the thermal conductivity of the
硬化促進剤として、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、及び第四級アンモニウム塩が挙げられる。適度な反応性の観点からイミダゾール系の化合物が好ましい。イミダゾール類としては、2-メチルイミダゾール、1-ベンジル-2-メチルイミダゾール、1-シアノエチル-2-フェニルイミダゾール、1-シアノエチルー2-メチルイミダゾール等が挙げられる。これらは一種を単独で使用してもよいし、二種以上を併用してもよい。 (Curing accelerator)
Examples of the curing accelerator include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of appropriate reactivity, imidazole compounds are preferable. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used alone or in combination of two or more.
以下の材料を表1及び表2に示した配合割合(質量部)で混合してワニスを調製した。溶媒としてシクロヘキサノンを使用し、ワニスの固形分割合は40質量%とした。100メッシュのフィルターでワニスをろ過するとともに真空脱泡した。ワニスを塗布するフィルムとして、離型処理が施されたポリエチレンテレフタレート(PET)フィルム(厚さ38μm)を準備した。真空脱泡後のワニスを、PETフィルムの離型処理が施された面上に塗布した。塗布したワニスを、90℃で5分間、続いて140℃で5分間の二段階で加熱乾燥した。こうして、実施例及び比較例に係る接着フィルムとして、PETフィルムと、その表面上に形成されたBステージ状態(半硬化状態)の接着剤層(厚さ110μm)とを備える積層フィルムをそれぞれ作製した。 (Examples 1-5 and Comparative Examples 1-2)
The following materials were mixed in the mixing ratios (parts by mass) shown in Tables 1 and 2 to prepare varnishes. Cyclohexanone was used as the solvent, and the solid content ratio of the varnish was 40% by mass. The varnish was filtered with a 100-mesh filter and vacuum degassed. As a film to which the varnish was applied, a polyethylene terephthalate (PET) film (thickness 38 μm) subjected to a mold release treatment was prepared. The varnish after vacuum defoaming was applied on the surface of the PET film that had been subjected to the release treatment. The applied varnish was heat-dried in two steps of 90° C. for 5 minutes and then 140° C. for 5 minutes. Thus, as the adhesive films according to the examples and the comparative examples, a laminated film including a PET film and a B-stage state (semi-cured state) adhesive layer (thickness 110 μm) formed on the surface thereof was produced. ..
<エポキシ樹脂>
・(A1)…XD-1000-2L:(商品名、日本化薬(株)製、シクロペンタジエン型エポキシ樹脂、脂環式構造、25℃において固体)
・(A2)…HP-7200L:(商品名、DIC(株)製、シクロペンタジエン型エポキシ樹脂、脂環式構造、25℃において固体)
・(A3)…YDCN-700-10:(商品名、新日鉄住金化学(株)製、クレゾールノボラック型エポキシ樹脂、25℃において固体)
・(A4)…EXA-830CRP:(商品名、DIC(株)製、液状ビスフェノールF型エポキシ樹脂、25℃において液状)
<硬化剤>
・(B1)…MEHC-7841-4S:(商品名、明和化成(株)製、フェノールアラルキル樹脂、軟化点:65℃)
・(B2)…HE-100C-30:(商品名、エア・ウォーター(株)製、フェニルアラキル型フェノール樹脂、軟化点:75℃)
<エラストマ>
・(C1)…SG-P3溶剤変更品(商品名、ナガセケムテックス(株)製、アクリルゴム、重量平均分子量:80万、Tg:12℃、溶剤はシクロヘキサノン)
・(C2)…SG-708-6:(サンプル名、ナガセケムテックス(株)製、アクリルゴム、重量平均分子量70万)
<無機フィラー>
・SC2050-HLG:(商品名、(株)アドマテックス製、シリカフィラー分散液、平均粒径0.50μm)
<硬化促進剤>
・キュアゾール2PZ-CN:(商品名、四国化成工業(株)製、1-シアノエチル-2-フェニルイミダゾール) [material]
<Epoxy resin>
・(A1)... XD-1000-2L: (trade name, manufactured by Nippon Kayaku Co., Ltd., cyclopentadiene type epoxy resin, alicyclic structure, solid at 25° C.)
・(A2)...HP-7200L: (trade name, manufactured by DIC Corporation, cyclopentadiene type epoxy resin, alicyclic structure, solid at 25° C.)
・(A3)...YDCN-700-10: (trade name, Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25° C.)
・(A4)...EXA-830CRP: (trade name, liquid bisphenol F type epoxy resin manufactured by DIC Corporation, liquid at 25° C.)
<Curing agent>
・(B1)... MEHC-7841-4S: (trade name, manufactured by Meiwa Kasei Co., Ltd., phenol aralkyl resin, softening point: 65° C.)
・(B2)... HE-100C-30: (trade name, manufactured by Air Water Co., Ltd., phenyl aralkyl type phenol resin, softening point: 75° C.)
<Elastomer>
-(C1)... SG-P3 solvent modified product (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone)
-(C2)... SG-708-6: (Sample name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight 700,000)
<Inorganic filler>
SC2050-HLG: (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 μm)
<Curing accelerator>
・Curazole 2PZ-CN: (trade name, 1-cyanoethyl-2-phenylimidazole manufactured by Shikoku Chemicals Co., Ltd.)
実施例及び比較例に係る接着剤層について、ずり粘度、埋込性及びブリードの評価を行った。 [Evaluation of adhesive layer]
Shear viscosity, embeddability and bleed were evaluated for the adhesive layers according to the examples and comparative examples.
接着剤層(厚さ110μm)を所定のサイズに切断し、四枚の接着剤片を準備した。四枚の接着剤片を60℃のホットプレート上でゴムロールを使用してラミネートすることにより、厚さ440μmの試料を作製した。この試料をφ9mmのポンチで打ち抜き、ずり粘度計(TA社製:商品名 ARES-G2)を使用して以下の条件でずり粘度を測定した。表1及び表2に結果を示す。
・測定周波数:10Hz
・昇温速度:10℃/分
・測定温度:35~130℃
・アキシャルフォース:100gf <Measurement of shear viscosity>
The adhesive layer (thickness 110 μm) was cut into a predetermined size to prepare four adhesive pieces. A sample having a thickness of 440 μm was prepared by laminating the four pieces of adhesive on a hot plate at 60° C. using a rubber roll. This sample was punched with a punch having a diameter of 9 mm, and the shear viscosity was measured under the following conditions using a shear viscometer (manufactured by TA: trade name ARES-G2). The results are shown in Tables 1 and 2.
・Measurement frequency: 10Hz
・Raising rate: 10°C/min ・Measuring temperature: 35-130°C
・Axial force: 100gf
まず、埋込性の評価に使用する構造体であって、基板と、その表面にマウントされた第1の半導体素子とを備える構造体を以下のようにして準備した。すなわち、フィルム状接着剤HR9004-10(商品名、日立化成(株)製、厚さ10μm)を半導体ウェハ(直径:8インチ、厚さ:50μm)に70℃で貼り付けた。半導体ウェハ及びフィルム状接着剤を4.8×5.7mm角にダイシングすることによって、接着剤付き半導体素子(第1の半導体素子)を得た。この接着剤付き半導体素子を評価用基板に120℃、0.20MPa、2秒間の条件で圧着した。なお、評価用基板として、表面にソルダーレジストAUS308(商品名、大陽日酸(株)製)が塗布された基板(総厚:260μm)を使用した。 <Embedding evaluation>
First, a structure used for evaluation of embedding property, including a substrate and a first semiconductor element mounted on the surface thereof, was prepared as follows. That is, a film adhesive HR9004-10 (trade name, manufactured by Hitachi Chemical Co., Ltd.,
A:ボイドが観測されなかった。
B:ボイドが観測されたが、その割合が5面積%未満であった。
C:ボイドが観測され、その割合が5面積%以上であった。 A semiconductor element with an adhesive piece (second semiconductor element) was pressure-bonded to the position where the first semiconductor element was mounted in the structure. The pressure bonding conditions were 120° C., 0.20 MPa, and 1.5 seconds. The alignment was performed so that the first semiconductor element was embedded in the central position of the adhesive piece. The evaluation sample thus prepared was observed for the presence or absence of voids with an ultrasonic digital image diagnostic apparatus (Insight Co., Ltd., probe: 75 MHz). If voids were observed, the voids per unit area were observed. Area was calculated, and the results of these analyzes were evaluated as embeddability. The evaluation criteria are as follows. The results are shown in Tables 1 and 2.
A: No void was observed.
B: Voids were observed, but the ratio was less than 5 area %.
C: Voids were observed, and the ratio was 5 area% or more.
まず、ブリードの評価に使用する構造体であって、基板と、その表面にマウントされた第1の半導体素子とを備える構造体を以下のようにして準備した。すなわち、フィルム状接着剤HR9004-10(商品名、日立化成(株)製、厚さ10μm)を半導体ウェハ(直径:8インチ、厚さ:50μm)に70℃で貼り付けた。半導体ウェハ及びフィルム状接着剤を2.1×4.8mm角にダイシングすることによって、接着剤付き半導体素子(第1の半導体素子)を得た。この接着剤付き半導体素子を評価用基板に120℃、0.20MPa、2秒間の条件で圧着した。なお、評価用基板として、表面にソルダーレジストAUS308(商品名、大陽日酸(株)製)が塗布された基板(総厚:260μm)を使用した。 <Bleed evaluation>
First, a structure used for evaluation of bleeding, including a substrate and a first semiconductor element mounted on the surface thereof, was prepared as follows. That is, a film adhesive HR9004-10 (trade name, manufactured by Hitachi Chemical Co., Ltd.,
特許文献2の実施例2(ずり粘度が5000Pa・sとなる温度:63℃)の再現試験を実施した。すなわち、特許文献2の実施例2で使用している材料と同じ材料を使用し、特許文献2の実施例2と同様にして参考例に係るフィルム状接着剤を作製した。 (Reference example)
A reproduction test of Example 2 of Patent Document 2 (temperature at which shear viscosity becomes 5000 Pa·s: 63° C.) was performed. That is, the same material as that used in Example 2 of
Claims (15)
- 熱硬化性樹脂組成物からなる接着剤層を含む接着フィルムであって、
前記接着剤層の40℃におけるずり粘度をη40とし、前記接着剤層の80℃におけるずり粘度をη80とすると、
η80が2500~4500Pa・sであり、
η80に対するη40の比率(η40/η80)が25~200である、接着フィルム。 An adhesive film comprising an adhesive layer made of a thermosetting resin composition,
When the shear viscosity of the adhesive layer at 40° C. is η 40, and the shear viscosity of the adhesive layer at 80° C. is η 80 ,
η 80 is 2500 to 4500 Pa·s,
ratio of eta 40 for η 80 (η 40 / η 80 ) is 25 to 200, the adhesive film. - チップ埋込型半導体パッケージの製造プロセスにおいて、基板上の第1の半導体素子を埋め込むとともに、前記基板に対して第2の半導体素子をマウントするために前記接着剤層が用いられる、請求項1に記載の接着フィルム。 The adhesive layer is used to embed a first semiconductor element on a substrate and mount a second semiconductor element on the substrate in a manufacturing process of a chip-embedded semiconductor package. The adhesive film described.
- η40が10万Pa・s以上である、請求項1又は2に記載の接着フィルム。 The adhesive film according to claim 1 or 2, wherein η 40 is 100,000 Pa·s or more.
- 前記熱硬化性樹脂組成物が40℃超70℃未満の軟化点を有するフェノール樹脂を含有する、請求項1~3のいずれか一項に記載の接着フィルム。 The adhesive film according to any one of claims 1 to 3, wherein the thermosetting resin composition contains a phenol resin having a softening point of more than 40°C and less than 70°C.
- 25℃において液状であるエポキシ樹脂の含有率が前記熱硬化性樹脂組成物に含まれるエポキシ樹脂の全質量基準で40質量%未満である、請求項1~4のいずれか一項に記載の接着フィルム。 Adhesion according to any one of claims 1 to 4, wherein the content of the epoxy resin which is liquid at 25°C is less than 40% by mass based on the total mass of the epoxy resin contained in the thermosetting resin composition. the film.
- 前記熱硬化性樹脂組成物が脂環式構造を有するエポキシ樹脂と、硬化剤と、エラストマとを含む、請求項1~5のいずれか一項に記載の接着フィルム。 The adhesive film according to any one of claims 1 to 5, wherein the thermosetting resin composition contains an epoxy resin having an alicyclic structure, a curing agent, and an elastomer.
- 前記硬化剤がフェノール樹脂である、請求項6に記載の接着フィルム。 The adhesive film according to claim 6, wherein the curing agent is a phenol resin.
- 前記エラストマがアクリル樹脂である、請求項6又は7に記載の接着フィルム。 The adhesive film according to claim 6 or 7, wherein the elastomer is an acrylic resin.
- 前記熱硬化性樹脂組成物が無機フィラーを含む、請求項1~8のいずれか一項に記載の接着フィルム。 The adhesive film according to any one of claims 1 to 8, wherein the thermosetting resin composition contains an inorganic filler.
- 前記熱硬化性樹脂組成物が硬化促進剤を含む、請求項1~9のいずれか一項に記載の接着フィルム。 The adhesive film according to any one of claims 1 to 9, wherein the thermosetting resin composition contains a curing accelerator.
- 前記接着剤層の一方の表面上に設けられた基材フィルムを備える、請求項1~10のいずれか一項に記載の接着フィルム。 The adhesive film according to any one of claims 1 to 10, comprising a base film provided on one surface of the adhesive layer.
- 請求項1~11のいずれか一項に記載の接着フィルムの前記接着剤層と、
前記接着剤層の一方の表面上に設けられた粘着剤層と、
を備える、ダイシング・ダイボンディング一体型フィルム。 The adhesive layer of the adhesive film according to any one of claims 1 to 11,
A pressure-sensitive adhesive layer provided on one surface of the adhesive layer,
A film with integrated dicing and die bonding. - 前記接着剤層を覆うように設けられた保護フィルムを備える、請求項12に記載のダイシング・ダイボンディング一体型フィルム。 The integrated dicing/die bonding film according to claim 12, further comprising a protective film provided so as to cover the adhesive layer.
- 請求項12又は13に記載のダイシング・ダイボンディング一体型フィルムを用いた、半導体パッケージの製造方法。 A method for manufacturing a semiconductor package using the dicing/die-bonding integrated film according to claim 12 or 13.
- 基板と、前記基板の表面上にマウントされた第1の半導体素子とを備える構造体を準備する工程と、
請求項12又は13に記載のダイシング・ダイボンディング一体型フィルムの前記接着剤層とウェハとを貼り合わせる工程と、
前記接着剤層に貼り合わされた状態の前記ウェハを複数の第2の半導体素子に個片化する工程と、
前記接着剤層が個片化されることによって形成された接着剤片と前記第2の半導体素子と含む積層体を前記粘着剤層からピックアップする工程と、
前記第1の半導体素子が前記接着剤片に埋め込まれるように、前記基板に対して前記積層体を熱圧着する工程と、
加熱処理によって前記接着剤片を硬化させる工程と、
を含む、チップ埋込型半導体パッケージの製造方法。 Preparing a structure comprising a substrate and a first semiconductor element mounted on the surface of the substrate;
Bonding the adhesive layer of the dicing/die-bonding integrated film according to claim 12 or 13 to a wafer;
Separating the wafer bonded to the adhesive layer into a plurality of second semiconductor elements,
A step of picking up from the pressure-sensitive adhesive layer a laminate including the adhesive piece formed by dividing the adhesive layer into individual pieces and the second semiconductor element;
Thermocompression-bonding the laminated body to the substrate so that the first semiconductor element is embedded in the adhesive piece;
Curing the adhesive piece by heat treatment,
A method of manufacturing a chip-embedded semiconductor package, comprising:
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005103180A1 (en) * | 2004-04-20 | 2005-11-03 | Hitachi Chemical Co., Ltd. | Adhesive sheet, semiconductor device and process for producing semiconductor device |
JP2012214526A (en) * | 2011-03-28 | 2012-11-08 | Hitachi Chemical Co Ltd | Film adhesive, adhesive sheet and semiconductor apparatus |
JP2013060524A (en) * | 2011-09-13 | 2013-04-04 | Hitachi Chemical Co Ltd | Film-like adhesive, adhesive sheet, semiconductor device and production method thereof |
JP2013181049A (en) * | 2012-02-29 | 2013-09-12 | Hitachi Chemical Co Ltd | Film-shaped adhesive, adhesive sheet and semiconductor device |
JP2014175459A (en) * | 2013-03-08 | 2014-09-22 | Hitachi Chemical Co Ltd | Semiconductor device and semiconductor device manufacturing method |
JP2017122159A (en) * | 2016-01-06 | 2017-07-13 | 日立化成株式会社 | Adhesive film and method for producing the same, and adhesive composition used in the same |
-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005103180A1 (en) * | 2004-04-20 | 2005-11-03 | Hitachi Chemical Co., Ltd. | Adhesive sheet, semiconductor device and process for producing semiconductor device |
JP2012214526A (en) * | 2011-03-28 | 2012-11-08 | Hitachi Chemical Co Ltd | Film adhesive, adhesive sheet and semiconductor apparatus |
JP2013060524A (en) * | 2011-09-13 | 2013-04-04 | Hitachi Chemical Co Ltd | Film-like adhesive, adhesive sheet, semiconductor device and production method thereof |
JP2013181049A (en) * | 2012-02-29 | 2013-09-12 | Hitachi Chemical Co Ltd | Film-shaped adhesive, adhesive sheet and semiconductor device |
JP2014175459A (en) * | 2013-03-08 | 2014-09-22 | Hitachi Chemical Co Ltd | Semiconductor device and semiconductor device manufacturing method |
JP2017122159A (en) * | 2016-01-06 | 2017-07-13 | 日立化成株式会社 | Adhesive film and method for producing the same, and adhesive composition used in the same |
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---|---|---|---|---|
WO2023181397A1 (en) * | 2022-03-25 | 2023-09-28 | 株式会社レゾナック | Adhesive film for semiconductor, dicing die-bonding film, and method for manufacturing semiconductor device |
WO2023182410A1 (en) * | 2022-03-25 | 2023-09-28 | 株式会社レゾナック | Adhesive film for semiconductors, dicing die bonding film, and method for manufacturing semiconductor device |
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