JP2012214526A - Film adhesive, adhesive sheet and semiconductor apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film adhesive that can mount even a semiconductor element composed of an ultrathin chip in a wire embedding structure without causing a void on a joining surface and has excellent heat resistance, moisture resistance and reflow resistance, an adhesive sheet and a semiconductor apparatus manufactured using the film adhesive.SOLUTION: The film adhesive comprises (a) 100 pts.mass of a thermosetting resin containing ≥20 mass% of an epoxy resin having a softening point of ≤100°C and an epoxy equivalent of ≥140 or a phenol resin having a hydroxyl equivalent of ≥140, (b) 30-100 pts.mass of a high-molecular weight component having 3-15% of a crosslinkable functional group on a monomer basis, a weight-average molecular weight of 100,000-800,000 and a Tg of -50 to 50°C, (c) 10-60 pts.mass of an inorganic filler and (d) 0-0.07 pt.mass of a curing accelerator.

Description

  The present invention relates to a film adhesive, an adhesive sheet, and a semiconductor device.

  Stacked MCP (Multi Chip Package), in which chips are stacked in multiple stages and increased in capacity with the increasing functionality of mobile phones and the like, has become widespread, and film adhesives that are advantageous in the mounting process for mounting semiconductor devices Is widely used as an adhesive for die bonding. An example of a multi-layer stacked package using such a film adhesive is a wire-embedded package. This is a package in which a wire connected to a chip to be crimped is crimped by using a high-flowing film adhesive, and the adhesive is covered with the adhesive. It is mounted on memory packages for devices.

  One of important characteristics required for the semiconductor device such as the stacked MCP is connection reliability. In order to improve connection reliability, film adhesives have been developed in consideration of characteristics such as heat resistance, moisture resistance, and reflow resistance. As such a film adhesive, for example, Patent Document 1 includes a resin containing a high molecular weight component and a thermosetting component mainly composed of an epoxy resin and a filler having a thickness of 10 to 250 μm. Adhesive sheets have been proposed. Patent Document 2 proposes an adhesive composition containing a mixture containing an epoxy resin and a phenol resin and an acrylic copolymer.

  Further, the connection reliability of the semiconductor device is greatly influenced by whether or not the chip can be crimped without generating a gap on the bonding surface. For this reason, a highly fluid film adhesive is used so that the chip can be crimped without generating voids, or a film with a low elastic modulus so that the generated voids can be eliminated in the sealing process of the semiconductor element. Ingenuity such as using an adhesive has been made.

  In recent years, in order to achieve higher capacity and higher density of packages, attempts have been made to make the thickness of the chip as thin as possible. When assembling packages using such ultra-thin chips, Problems occur. For example, when a film adhesive is used, the chip with adhesive is adsorbed by a tool with a hole called a collet, lifted, peeled off from the dicing tape, and pressed onto a semiconductor element or substrate. When the chip is thinned, the chip is easily bent in a convex shape due to the suction holes of the collet. As a result, the quality after the pressure bonding is deteriorated, and a void is easily generated in the chip. For this reason, even if a high-flowing film is used, voids tend to be generated at the time of pressure bonding, so that the characteristics of the film adhesive are improved.

WO 2005/103180 A1 JP 2002-220576 A

  In recent years, in order to achieve higher capacity and higher density of packages, packages using ultra-thin chips have been developed, and the problem is that voids due to the suction holes of the collet are particularly likely to occur. ing. This is a serious problem especially in a wire embedded package.

  The adhesive sheet or the like of Patent Document 1 contains a large amount of epoxy resin or the like for the purpose of increasing fluidity because the wire is embedded at the time of pressure bonding. For this reason, heat curing progresses due to heat during the semiconductor element manufacturing process, resulting in high elasticity, so the film does not deform even under high temperature and high pressure conditions during sealing, and the voids formed during crimping eventually disappear. do not do.

  On the other hand, although the adhesive film of Patent Document 2 has a low elastic modulus and can eliminate voids in the sealing process, it has a high viscosity and cannot be embedded with wires at the time of pressure bonding.

  In this way, when an ultra-thin chip is crimped using a film-like adhesive for embedding wires, voids are generated during crimping and will not disappear thereafter, so that sufficient connection reliability cannot be obtained. There is.

  The present invention has been made in view of the above circumstances, and can embed a wire at the time of crimping with a high fluidity, and even with heat during the semiconductor device manufacturing process (specifically, heating at about 150 ° C./1 hour). An object of the present invention is to provide a film adhesive that has low elasticity and can eliminate voids at the time of sealing. Another object of the present invention is to provide an adhesive sheet using the film adhesive of the present invention and a semiconductor device manufactured using the film adhesive of the present invention.

  In order to achieve the above-mentioned object, the present inventors have conducted intensive research on the selection of resins used for film adhesives and the preparation of physical properties. In particular, high fluidity is exhibited in an uncured film, and even after curing has progressed by heating, the tensile elastic modulus of the film adhesive is kept low and soft, and high adhesive strength is exhibited after complete curing. It is important to use not only the ratio of the thermosetting component and the flexible high molecular weight component, but also the use of a resin having a low molecular weight and a higher amount of reactive functional groups as the high molecular weight component and curing. It has been found that the problem can be solved by setting the amount of the accelerator within a specific range.

  That is, the present invention is as follows.

(1) (a) 100 mass of a thermosetting resin having a softening point of 100 ° C. or less and an epoxy resin having an epoxy equivalent of 140 or more or a phenol resin having a hydroxyl equivalent of 140 or more of 20 mass% or more. Part,
(B) 30 to 100 parts by mass of a high molecular weight component having a crosslinkable functional group in a monomer ratio of 3 to 15%, a weight average molecular weight of 100,000 to 800,000, and a Tg of -50 to 50 ° C;
(C) 10 to 60 parts by mass of an inorganic filler,
(D) A film-like adhesive comprising 0 to 0.07 parts by mass of a curing accelerator.

(2) The shear viscosity at 80 ° C. before curing is 200 to 11000 Pa · s or less, and the tensile elastic modulus at 180 ° C. after heating at 150 ° C. for 1 hour is 20 MPa or less (1 ) Film adhesive.

(3) The film adhesive according to (1) or (2) above, wherein the adhesive force to the chip on which the SiN thin film is formed is 1.0 MPa or more.

(4) The film adhesive according to any one of (1) to (3) above is applied to a substrate having a wire at 80 to 180 ° C., 0.01 to 0.50 MPa, 0.5 to 2.0. A semiconductor device obtained by pressure bonding under conditions of seconds, setting a thermal history in the manufacturing process to 150 ° C./1 hour or less, and sealing under conditions of 170 to 180 ° C./6.0 to 10.0 MPa / 90 seconds. .

(5) The adhesive sheet which has a film adhesive as described in any one of said (1)-(3), and a base film.

  According to the present invention, even a semiconductor element composed of an ultra-thin chip can be mounted with a wire embedded structure without causing a gap on the bonding surface, and has excellent heat resistance, moisture resistance, and reflow resistance. A film adhesive, an adhesive sheet, and a semiconductor device manufactured using the film adhesive can be provided.

  The film adhesive of the present invention can provide an adhesive force to a chip on which a SiN thin film is formed at 1.0 MPa or more, and provides a film adhesive excellent in heat resistance, moisture resistance and reflow resistance. can do.

  The film-like adhesive of the present invention can eliminate voids generated during crimping while ensuring good wire embedding during crimping. In addition, the manufacturing process of the semiconductor device can be made easier. Then, by using the film-like adhesive of the present invention in a wire-embedded package using an ultrathin chip, a semiconductor having no voids on the bonding surface, which is difficult to achieve with the conventional film-like adhesive for wire-embedding A device can be obtained.

  The film-like adhesive of the present invention is not limited to wire embedding applications, but can be used in the same manner in applications where semiconductor elements are bonded to a substrate having irregularities caused by wiring or the like, a metal substrate such as a lead frame, or the like. is there.

It is a sectional structure schematic diagram of one mode of an adhesive sheet of the present invention. It is a sectional structure schematic diagram of one mode of an adhesive sheet of the present invention. It is a sectional structure schematic diagram of one mode of an adhesive sheet (dicing die bonding integrated adhesive sheet) of the present invention. It is a sectional structure schematic diagram of one mode of an adhesive sheet (dicing die die tape integrated adhesive sheet) of the present invention. 1 is a schematic cross-sectional view of one embodiment of a semiconductor device of the present invention. 1 is a schematic cross-sectional view of one embodiment of a semiconductor device of the present invention. It is a figure for demonstrating evaluation of the wire embedding property in an Example (the board | substrate for evaluation is shown). It is a figure (a sample is shown) for demonstrating evaluation of the wire embedding property in an Example. The SEM photograph of the sample obtained by evaluation of the wire embedding property in an Example is shown.

  Details of the present invention will be described below.

<Film adhesive>
The film adhesive by this invention is comprised from the adhesive composition which can be in a completely hardened | cured material (C stage) state after a hardening process through a semi-hardened (B stage) state.

  The film-like adhesive of the present invention has a characteristic that the shear viscosity at 80 ° C. before curing is 200 to 11000 Pa · s, and the tensile elastic modulus at 180 ° C. after heating at 150 ° C. for 1 hour is 20 MPa or less. .

  The above shear viscosity is a measured value when measured using ARES (manufactured by Rheometric Scientific) and increasing the temperature at a temperature increase rate of 5 ° C./min while giving 5% strain to the film adhesive. Means.

  By setting the shear viscosity at 80 ° C. to 200 to 11000 Pa · s, 80 to 180 ° C., 0.01 to 0.50 MPa, and crimping of 0.5 to 2.0 seconds is derived from the gap under the wire or the substrate step. It becomes possible to embed irregularities to be embedded.

  On the other hand, the tensile elastic modulus means a measured value when measured using a dynamic viscoelasticity measuring apparatus (manufactured by UBM Co., Ltd.) while increasing the temperature at a rate of temperature increase of 3 ° C./min.

  Residual by sealing under a sealing condition of 170 to 180 ° C./6.0 to 10.0 MPa / 90 seconds by setting the tensile elastic modulus at 180 ° C. after heating at 150 ° C. for 1 hour to 20 MPa or less. Voids can be eliminated.

In order for the film adhesive of the present invention to have the above properties, (a) an epoxy resin having a softening point of 100 ° C. or lower and an epoxy equivalent of 140 or higher or a phenol resin having a hydroxyl equivalent of 140 or higher is 20 100 parts by mass of a thermosetting resin containing at least mass%,
(B) 30 to 100 parts by mass of a high molecular weight component having a crosslinkable functional group in a monomer ratio of 3 to 15%, a weight average molecular weight of 100,000 to 800,000, and a Tg of -50 to 50 ° C;
(C) 10 to 60 parts by mass of an inorganic filler,
(D) It can produce by shape | molding the adhesive composition containing 0-0.07 mass part of hardening accelerators in a film form.

  More specifically, in order to set the shear viscosity at 80 ° C. to 200 to 11000 Pa · s, a thermosetting resin having a high molecular weight component reduced, becoming liquid at 100 ° C. or lower, or having a softening point of 100 ° C. or lower. What is necessary is just to raise filler content and to reduce filler content.

  In order to set the tensile modulus at 180 ° C. after heating at 150 ° C. for 1 hour to 20 MPa or less, increase the high molecular weight component, lower the monomer ratio of the crosslinkable functional group of the high molecular weight component, What is necessary is just to use the thermosetting resin with a larger epoxy equivalent and hydroxyl equivalent to lower.

  The film adhesive of the present invention preferably has an adhesive force to a chip on which a SiN thin film is formed of 1.0 MPa or more. In order for the film adhesive to have the above adhesive force, the adhesive composition may be configured as described above.

  From the viewpoint of obtaining sufficient adhesiveness, the adhesive composition may further include (e) an additive such as a coupling agent.

  Moreover, adhesive force is obtained by measuring the die shear strength mentioned later.

  Hereinafter, each component will be described.

(A) Thermosetting component:
(A) As a thermosetting component, a thermosetting resin is preferable and an epoxy resin, a phenol resin, etc. which have the heat resistance and moisture resistance required when mounting a semiconductor element are preferable.

In order to eliminate voids remaining at the time of sealing, it is necessary to lower the tensile elastic modulus during and after curing, and for this purpose, the thermosetting resin has a softening point of 100 ° C. or lower, and / or It is necessary to contain 20% by mass or more of an epoxy resin having an epoxy equivalent of 140 or more or a phenol resin having a hydroxyl equivalent of 140 or more. Examples of such an epoxy resin include an epoxy resin represented by the general formula (1).

(In formula (1), R _{1 to} R ₄ are each independently a hydrogen atom, a linear, branched or cyclic alkyl group, a linear, branched or cyclic aralkyl group, a linear, branched or cyclic alkenyl group, a hydroxyl group, an aryl. A group or a halogen atom, k and m represent an integer of 1 to 4)
In the above formula (1), as preferred epoxy resins, R _{1 to} R ₄ are hydrogen atoms, and k = 4, m = 4 epoxy resin (if it is a commercial product, YDF-8170C manufactured by Toto Kasei Co., Ltd.) Etc.) or an epoxy resin in which R _{1 to} R ₂ are methyl groups, R _{3 to} R ₄ are hydrogen atoms, k = 2, m = 2 in the above formula (1) (Tohto Kasei is a commercial product) YSLV-80XY etc. made by Corporation | KK) etc. are mentioned.

Other epoxy resins that are not bound by the above restrictions (not corresponding to the above general formula (1)) are not particularly limited as long as they have a softening point of 100 ° C. or lower and an epoxy equivalent of 140 or higher and are cured and have an adhesive action. Bisphenol A type epoxy resin, bisphenol F type epoxy resin, bifunctional epoxy resin modified with bisphenol E type epoxy resin, novolac type epoxy resin such as phenol novolac type epoxy resin and cresol novolac type epoxy resin, etc. are used. be able to. Examples of bifunctional epoxy resins obtained by modifying bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, etc. include R710 (liquid, epoxy equivalent 170), R1710 (liquid) manufactured by Printec Co., Ltd. , Epoxy equivalent 175), R2710 (liquid, epoxy equivalent 180) and the like (see the following general formula (2)).

  Moreover, you may use together epoxy resins other than an epoxy resin with a softening point of 100 degrees C or less and an epoxy equivalent of 140 or more as a thermosetting resin. As such an epoxy resin, generally known ones such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic ring-containing epoxy resin or an alicyclic epoxy resin can be used.

  In addition, any epoxy resin preferably has a weight average molecular weight of 1000 or less, more preferably 500 or less, from the viewpoint of enhancing the flexibility of the film in the B-stage state. Examples of the epoxy resin having a weight average molecular weight of 500 or less that is excellent in flexibility include bisphenol A type or bisphenol F type epoxy resin.

Examples of the phenol resin having a softening point of 100 ° C. or lower and a hydroxyl group equivalent of 140 or higher as the thermosetting resin include phenol resins represented by the general formulas (3) and (4).

(In the formula (3), each R ₅ is independently a hydrogen atom, a linear, branched or cyclic alkyl group, a linear, branched or cyclic aralkyl group, a linear, branched or cyclic alkenyl group, a hydroxyl group, an aryl group, or Represents a halogen atom, n represents an integer of 1 to 4, and p represents an integer in the range of 1 to 50.)

(In formula (4), q represents an integer in the range of 1-50.)
Typical examples of the phenolic resin represented by the general formula (3) include the Millex XLC-series and XL series (for example, the Millex XLC-LL (in the general formula (3), R ₅ is a hydrogen atom, and n = 3))) and the like.

  Moreover, there exists HE series (for example, HE200C-10) by Air Water, etc. as a typical thing as a phenol resin represented by General formula (4).

  In addition to those represented by the general formulas (3) and (4), a naphthol resin SN series manufactured by Tohto Kasei Co., Ltd. may be used as a phenol resin having a softening point of 100 ° C. or lower and a hydroxyl group equivalent of 140 or higher.

  In addition, you may use together phenol resin other than a phenol resin with a softening point of 100 degrees C or less and a hydroxyl equivalent of 140 or more as a thermosetting resin. Other phenolic resins are not particularly limited as long as they are cured and have an adhesive action. Specific examples include Phenolite LF, KA, and TD series manufactured by DIC Corporation.

  From the viewpoint of heat resistance, both the phenol resin having a softening point of 100 ° C. or less and a hydroxyl group equivalent of 140 or more and the other phenol resin have a water absorption rate of 2% after being put into a constant temperature and humidity chamber of 85 ° C. and 85% RH for 48 hours. %, And the heating mass reduction rate (temperature increase rate: 5 ° C./min, atmosphere: nitrogen) at 350 ° C. measured with a thermogravimetric analyzer (TGA) is preferably less than 5% by mass.

  When the adhesive composition of a film adhesive contains both an epoxy resin and a phenol resin as thermosetting components, the blending amount of the epoxy resin and the phenol resin is 0.70 / in equivalent ratio of epoxy equivalent and hydroxyl equivalent, respectively. It is preferably 0.30 to 0.30 / 0.70, more preferably 0.65 / 0.35 to 0.35 / 0.65, and 0.60 / 0.40 to 0.40. /0.60 is more preferable, and 0.60 / 0.40 to 0.50 / 0.50 is particularly preferable.

  If the blending ratio exceeds the above range, the produced film adhesive may be inferior in curability, or the viscosity of the uncured film adhesive may be high and fluidity may be inferior.

  In addition to epoxy resins having a softening point of 100 ° C. or lower and an epoxy equivalent of 140 or higher, other epoxy resins, phenol resins having a softening point of 100 ° C. or lower and a hydroxyl equivalent of 140 or higher, and other phenol resins, (a) thermosetting As a component, a resin having a functional group such as a (meth) acryl group that is polymerized by heating can be used.

(B) High molecular weight component:
(B) As a high molecular weight component, 3-15% of a crosslinkable functional group is contained in a monomer ratio, Tg (glass transition temperature) is −50 ° C. to 50 ° C., and a weight average molecular weight is 100,000 to 800,000. High molecular weight components are preferred. In the present invention, an acrylic resin is preferable, and a Tg (glass transition temperature) is −50 ° C. to 50 ° C., a weight average molecular weight is 100,000 to 800,000, an epoxy group such as glycidyl acrylate or glycidyl methacrylate, or An acrylic resin such as an epoxy group-containing (meth) acrylic copolymer obtained by polymerizing a functional monomer having a glycidyl group as a crosslinkable functional group is more preferred.

  As such a resin, an epoxy group-containing (meth) acrylic acid ester copolymer, an epoxy group-containing acrylic rubber or the like can be used, and an epoxy group-containing acrylic rubber is more preferable. The epoxy group-containing acrylic rubber is a rubber having an epoxy group mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like. .

  In the present invention, the crosslinkable functional group of the high molecular weight component includes not only an epoxy group but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.

  The weight average molecular weight is a polystyrene conversion value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

  The glass transition temperature is measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).

  If the Tg of the high molecular weight component exceeds 50 ° C., the flexibility of the film adhesive may be lowered, and if the Tg is less than −50 ° C., the flexibility of the film adhesive is too high, so that the wafer The film adhesive is difficult to cut during dicing, and the dicing property may deteriorate due to the generation of burrs.

  Moreover, when the weight average molecular weight of the high molecular weight component is less than 100,000, the film-forming property may be deteriorated and the adhesive strength and heat resistance of the film-like adhesive may be lowered, and the weight average molecular weight may be 800,000. When it exceeds, the cutting property and breakability of the uncured film adhesive may be lowered, and the quality of dicing may be deteriorated. In these respects, the weight average molecular weight of the high molecular weight component is more preferably 100,000 or more and 800,000 or less.

  Furthermore, it is easy to cut the film adhesive at the time of wafer dicing, it is difficult to generate resin waste, high adhesive strength and heat resistance, and high fluidity of the uncured film adhesive. ) The high molecular weight component is preferably a high molecular weight component having a Tg of −20 ° C. to 40 ° C. and a weight average molecular weight of 100,000 to 700,000, a Tg of −10 ° C. to 30 ° C., and a weight average molecular weight of 150,000 to High molecular weight components that are 550,000 are more preferred.

  The (b) high molecular weight component is preferably contained in an amount of 30 to 100 parts by mass with respect to 100 parts by mass of the (a) thermosetting component. When the amount is less than 30 parts by mass, the flexibility of the film is lowered, and after heating, the elasticity becomes high, and there is a tendency that voids cannot be embedded at the time of sealing. On the other hand, when it exceeds 100 mass parts, the fluidity | liquidity of an uncured film will fall and it exists in the tendency for the adhesive force after hardening to fall.

  As the high molecular weight component, a mixture of high molecular weight components polymerized from different monomers or a mixture of high molecular weight components having different molecular weights may be used. In particular, when only a high molecular weight component having a molecular weight of about 250,000 and a low weight average molecular weight is used, although the fluidity of the uncured film is high, the adhesive strength after curing tends to decrease. For this reason, mixing a higher molecular weight component having a weight average molecular weight of about 800,000 or higher can be an effective means. However, if a high molecular weight component having a high weight average molecular weight is added too much, the fluidity of the uncured film is deteriorated. Therefore, the content of the high molecular weight component having a weight average molecular weight of about 800,000 is (b) a high molecular weight component. Of these, the content is preferably about 10 to 40%.

  Furthermore, in order to develop a high adhesive force, the monomer ratio of a functional monomer such as glycidyl acrylate or glycidyl methacrylate is preferably 3 to 15%, and from the viewpoint of maintaining a low tensile elastic modulus after heating at 150 ° C./1 hour, 3 10% is more preferable.

  The high molecular weight component used in the present invention can also be obtained as a commercial product. For example, trade name “acrylic rubber HTR-860P” manufactured by Teikoku Chemical Industry Co., Ltd. can be used. This compound has a glycidyl moiety as a crosslinkable functional group and is a compound based on an acrylic rubber made of an acrylic acid derivative, and has a weight average molecular weight of 700,000 to 800,000 and a glass transition temperature Tg (−7 ° C.). It is.

(C) Inorganic filler:
(C) As an inorganic filler, the improvement of the dicing property of the film adhesive in the B stage state, the improvement of the handling property of the film adhesive, the improvement of the thermal conductivity, the adjustment of the melt viscosity, the provision of thixotropic property, the adhesion From the viewpoint of improving the force, it is preferable to add a silica filler.

  In the adhesive composition of this embodiment, from the viewpoint of controlling the fluidity of the uncured film adhesive and the tensile modulus and adhesive strength of the post-cured film adhesive, (a) 100 mass of thermosetting component It is preferable to blend 10 to 60 parts by mass of an inorganic filler with respect to parts. When the inorganic filler less than the said lower limit is mix | blended, the dicing property of a non-hardened film adhesive may deteriorate, and the adhesive force after hardening may fall. On the other hand, when an inorganic filler exceeding the upper limit is blended, the fluidity of the uncured film adhesive is lowered, and the tensile modulus after curing tends to be increased.

  Inorganic fillers having different average particle diameters can be mixed and used. From the viewpoint of improving dicing properties, the main filler component occupying a ratio of 80% by mass or more has an average particle diameter of 0.00. An inorganic filler of 1 to 5 μm is preferred.

  When an inorganic filler having an average particle size of less than 0.1 μm is used as a main filler component, the fluidity of the uncured film adhesive may decrease due to an increase in specific surface area and an increase in the number of contained particles. When an inorganic filler having a diameter exceeding 5 μm is used as a main filler component, it may cause a decrease in adhesive force due to a decrease in contained particles and a deterioration in film film formability.

  In addition, the inorganic filler having different average particle diameters added to the main filler component is not particularly limited as long as it does not exceed the film thickness of the film adhesive to be produced. For the purpose of elasticity, etc., a filler having an average particle size of 5 μm or more is added, and foaming of a film adhesive in a semiconductor element manufacturing process due to an extremely low viscosity or improvement of adhesive strength after curing, etc. For the purpose, it is preferable that the average particle size is 0.1 μm or less.

(D) Curing accelerator:
(D) The curing accelerator is preferably an imidazole compound from the viewpoint of reactivity.

  A curing accelerator that is too reactive causes a rapid curing of the film adhesive during the manufacturing process of the semiconductor element, and tends to increase the tensile modulus after heating at 150 ° C./1 hour. On the other hand, a curing accelerator having a reactivity that is too low makes it difficult for the film-like adhesive to be completely cured by the thermal history in the manufacturing process of the semiconductor element, and it is mounted in the product uncured, There is a risk of inducing subsequent device failures.

  If the amount of curing accelerator added is too small, it will be difficult for the film adhesive to cure completely due to the heat history in the semiconductor element manufacturing process, and it will be mounted in the product uncured. Then, there is a risk of inducing subsequent device failures. On the other hand, when the addition amount of the curing accelerator is too large, the film-like adhesive is rapidly cured during the manufacturing process of the semiconductor element, and the tensile elastic modulus after heating at 150 ° C./1 hour tends to increase. . From such a viewpoint, the curing accelerator is preferably contained in an amount of 0 to 0.07 parts by mass with respect to 100 parts by mass of the thermosetting resin.

(E) Other ingredients:
In addition to the above (a) to (d), the adhesive composition of the present embodiment preferably contains a coupling agent from the viewpoint of improving adhesiveness. Examples of the coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like.

<Method for producing film adhesive>
A film adhesive can be produced from the varnish of the adhesive composition described above.

  Specifically, first, (a) a thermosetting resin containing the epoxy resin and the phenol resin, (b) a high molecular weight component, (c) an inorganic filler, (d) a curing accelerator, if necessary Then, other additive components such as the above coupling agent are mixed and kneaded in an organic solvent to prepare a varnish.

  Next, a layer of the varnish is formed by applying the obtained varnish on the base film. Next, after removing a solvent from a varnish layer by heat drying, a film adhesive is obtained by removing a base film.

  The above mixing and kneading can be performed by using a normal stirrer, a raking machine, a three-roller, a ball mill, or other disperser and appropriately combining them. The above-mentioned heat drying is not particularly limited as long as the solvent used is sufficiently volatilized, but it can be usually performed by heating at 60 ° C. to 200 ° C. for 0.1 to 90 minutes.

  There is no restriction | limiting in particular as said base film, For example, a polyester film, a polypropylene film (OPP film etc.), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, a methylpentene film etc. are mentioned. .

  The organic solvent is not particularly limited as long as it can uniformly dissolve, knead or disperse the above components, and a conventionally known organic solvent can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.

<Embodiments of Film Adhesive and Adhesive Sheet of the Present Invention>
The film thickness of the film adhesive is preferably 5 to 200 μm in order to sufficiently fill unevenness such as a wire for connecting a semiconductor element and a wiring circuit of a substrate. If the film thickness is less than 5 μm, the adhesive force tends to be poor. If the film thickness is more than 200 μm, it is not economical and it is difficult to meet the demand for miniaturization of the semiconductor device. In addition, 10-100 micrometers is more preferable, and 20-75 micrometers is still more preferable from the point which has high adhesiveness and can make a semiconductor device thin.

  The film adhesive of this invention can be used as an adhesive sheet by laminating | stacking on a base film.

  FIG. 1 is a schematic cross-sectional view showing an embodiment of an adhesive sheet according to the present invention.

  The adhesive sheet 100 shown in FIG. 1 is comprised from the base film 2 and the film adhesive 1 of this invention provided on one surface of this.

  The film adhesive 1 can be provided by laminating the base film 2 with the film adhesive according to the present invention obtained in advance. Further, as one method for producing a thicker film adhesive 1, it can be formed by bonding the film adhesive 1 obtained in advance with the film adhesive 1 of the adhesive sheet 100.

  FIG. 2 is a schematic cross-sectional view showing another embodiment of the adhesive sheet according to the present invention. The adhesive sheet 110 shown in FIG. 2 has a structure in which a cover film 3 is further provided on the side surface opposite to the base film 2 of the film adhesive 1 provided on the base film 2.

  Examples of the cover film 3 include a PET film, a PE film, and an OPP film.

  The film adhesive of the present invention may be used by itself, but as one embodiment, as a dicing / die bonding integrated adhesive sheet in which the film adhesive of the present invention is laminated on a conventionally known dicing tape. It can also be used. In this case, the efficiency of the operation can be improved in that the laminating process on the wafer is performed only once.

  Examples of the dicing tape include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. In addition, the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary.

  Further, the dicing tape preferably has adhesiveness, and the above-mentioned plastic film provided with adhesiveness may be used, or an adhesive layer may be provided on one side of the above-mentioned plastic film.

  Examples of such a dicing / die bonding integrated adhesive sheet include those having the configuration shown in FIGS. 3 and 4. The adhesive sheet 120 shown in FIG. 3 is a dicing tape in which a pressure-sensitive adhesive layer 6 is provided on a base film 7 that can ensure elongation (commonly known as expanding) when a tensile tension is applied. The film-like adhesive 1 is provided on the pressure-sensitive adhesive layer 6.

  The adhesive sheet 120 shown in FIG. 4 has the base film 2 provided on the surface of the film adhesive 1 of the adhesive sheet shown in FIG.

  As the base film 7, the plastic film described with the above-mentioned dicing tape is mentioned.

  Examples of the pressure-sensitive adhesive layer 6 include a resin composition containing a liquid component and a high molecular weight component and having an appropriate tack strength. The dicing tape can be formed by applying the adhesive layer 6 on the base film 7 and drying, or by bonding the adhesive layer 6 applied to the base film such as a PET film and drying to the base film 7. is there. The tack strength is set to a desired value, for example, by adjusting the ratio of the liquid component and the Tg of the high molecular weight component.

  When the dicing / die bonding integrated adhesive sheet is used in the manufacture of a semiconductor device, it must have an adhesive force that prevents the semiconductor elements from scattering during dicing, and can be easily peeled off from the dicing tape during subsequent pick-up.

  Such characteristics can be obtained by adjusting the tack strength of the pressure-sensitive adhesive layer as described above, and changing the tack strength by photoreaction, etc., but if the tackiness of the film adhesive is too high, picking up becomes difficult. Sometimes. Therefore, it is preferable to appropriately adjust the tack strength of the film adhesive of the present invention. As the method, for example, when the flow of the film adhesive at room temperature (25 ° C.) is increased, the adhesive strength and tack strength tend to increase, and when the flow is decreased, the adhesive strength and tack strength tend to decrease. You can use something.

  For example, when increasing the flow, a method such as increasing the content of a compound that functions as a plasticizer can be used. In the case of reducing the flow, for example, a method of reducing the content of a compound that functions as a plasticizer can be mentioned. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, and acrylic resins.

  As a method of laminating the film-like adhesive of the present invention on the dicing tape, a varnish of the adhesive composition described above was applied to the entire surface and dried, or in addition to a method of partially coating by printing, it was prepared in advance. A method of laminating the film adhesive of the present invention on a dicing tape by pressing or hot roll laminating is mentioned. In the present embodiment, a hot roll laminating method is preferable because it can be continuously manufactured and is efficient.

  The film thickness of the dicing tape is not particularly limited, and can be appropriately determined based on the knowledge of those skilled in the art depending on the film thickness of the film adhesive and the application of the dicing / die bonding integrated adhesive sheet. When the thickness of the dicing tape is less than 60 μm, the handleability is poor, and the dicing tape tends to be broken by the expansion in the process of peeling the chips diced by dicing from the dicing tape. On the other hand, 180 μm or less is desirable from the viewpoint of economy and good handleability. From the above viewpoint, the film thickness of the dicing tape is preferably 60 to 180 μm.

<Semiconductor device obtained using the film adhesive or adhesive sheet of the present invention>
The film adhesive and adhesive sheet of the present invention are preferably used for the production of semiconductor devices. More preferably, after bonding an adhesive sheet and dicing tape or a dicing / die bonding integrated adhesive sheet to a wafer or a chip that has already been made into small pieces at 0 ° C. to 90 ° C., by cutting with a rotary blade, laser or stretching. Manufacturing a semiconductor device including a step of obtaining a chip with an adhesive, press-bonding the chip with an adhesive to a semiconductor element or a substrate having unevenness connected by a wire, filling the unevenness, and sealing with a sealing material Used for. In the manufacture of the semiconductor device of the present invention, it is important that the thermal history in the process is 150 ° C./1 hour or less.

  “Heat history is 150 ° C./1 hour or less” indicates that the heat treatment temperature does not exceed 150 ° C. and the heat treatment time is less than 1 hour between the crimping step and the sealing step. For example, even if it is less than 150 ° C., it may not be preferable to exceed 1 hour.

  In the present invention, the load under the pressure bonding condition is preferably 0.01 to 0.50 MPa, and more preferably 0.02 to 0.2 MPa. If the load is less than 0.01 MPa, there are excessive unfilled parts, and the chip moves due to the pressure at the time of sealing, which may deteriorate the quality of the semiconductor device. On the other hand, when the pressure bonding load exceeds 0.50 MPa, the chip tends to be damaged. Further, when the chip with film adhesive is pressure-bonded to a substrate having irregularities, it is desirable to heat the adherend, the chip with film adhesive, or both.

  The heating temperature in the pressure bonding condition is preferably 80 to 180 ° C, and more preferably 80 to 160 ° C. If the temperature is less than 80 ° C., the embedding property of the unevenness tends to be lowered, and if it exceeds 180 ° C., the substrate tends to be deformed and warpage tends to increase. Examples of the heating method include a method of bringing the substrate into contact with a heated hot plate, irradiating infrared rays or microwaves, and blowing hot air.

  The crimping time is preferably 0.5 to 2.0 seconds.

  Examples of the wafer include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.

  When the film adhesive of the present invention is used alone, the film adhesive is bonded to the wafer, and then a dicing tape is bonded to the film adhesive surface.

  The temperature at which the film adhesive is affixed to the wafer, that is, the laminating temperature, is usually 0 to 90 ° C, preferably 15 to 80 ° C, and more preferably 40 to 80 ° C. When the temperature exceeds 90 ° C., a change in thickness due to excessive melting of the film adhesive may become remarkable. The dicing tape or the dicing / die bonding integrated adhesive sheet is also preferably applied at the above temperature.

  The sealing conditions in the sealing step are preferably 170 to 180 ° C./6.0 to 10.0 MPa / 90 seconds.

  As a use of the film adhesive of the present invention, a semiconductor device provided with a film adhesive will be specifically described with reference to the drawings. In recent years, semiconductor devices having various structures have been proposed, and the use of the film adhesive of the present invention is not limited to the semiconductor devices having the structure described below.

  FIG. 5 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.

  In the semiconductor device 210 shown in FIG. 5, the first-stage semiconductor element 9a is bonded to the semiconductor element mounting support member 10 on which the terminals 13 are formed by the cured product 1 ′ (adhesive member) of the film adhesive of the present invention. The second-stage semiconductor element 9b is further bonded to the first-stage semiconductor element 9a by the cured product 1 ′ (adhesive member) of the film adhesive of the present invention. Connection terminals (not shown) of the first-stage semiconductor element 9 a and the second-stage semiconductor element 9 b are electrically connected to external connection terminals via wires 11 and are sealed with a sealing material 12. Thus, the film adhesive of the present invention can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.

  FIG. 6 is a schematic cross-sectional view showing an embodiment of the semiconductor device of the present invention.

  In the semiconductor device 200 shown in FIG. 6, the semiconductor element 9 is bonded to the semiconductor element mounting support member 10 by the cured product 1 ′ (adhesive member) of the film adhesive of the present invention, and a connection terminal (not shown) of the semiconductor element 9 is illustrated. Is electrically connected to an external connection terminal (not shown) via a wire 11 and sealed with a sealing material 12.

  The semiconductor device (semiconductor package) shown in FIGS. 6 and 7 has, for example, the above-described chip with film adhesive bonded to the semiconductor element mounting support member or the semiconductor element by thermocompression bonding, and then the wire bonding process and sealing. It can be obtained through a process such as a sealing process using a stopper.

  By manufacturing a semiconductor device using the film adhesive or adhesive sheet of the present invention, it is possible to embed irregularities derived from gaps under the wires or substrate steps during crimping, and even if gaps remain after crimping, If the thermal history in the process is 150 ° C./1 hour or less, the film-like adhesive has low elasticity, and thus voids disappear during sealing.

  Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples.

(Examples 1-5 and Comparative Examples 1-2)
The product name and composition ratio (unit: part by mass) shown in Table 1 or Table 2 (a) epoxy resin and phenol resin as thermosetting resin, (c) cyclohexanone was added to the composition consisting of inorganic filler and mixed with stirring. . To this, (b) acrylic rubber as a high molecular weight component, which is similarly shown in Table 1 or Table 2, is added and stirred, and further, a coupling agent similarly shown in Table 1 or Table 2 and (d) a curing accelerator are added. In addition, varnish was obtained by stirring until each component was uniform.

  In addition, the symbol of each component in Table 1 and Table 2 means the following.

(Epoxy resin)
R2710: (trade name, manufactured by Printec Co., Ltd., bisphenol E type epoxy resin, epoxy equivalent 181, liquid at room temperature, weight molecular weight of about 360). In addition, it is an epoxy resin represented by the general formula (2).

YDF-8170C: (trade name, manufactured by Tohto Kasei Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent 159, liquid at room temperature, weight molecular weight of about 310). In the general formula (1), R _{1 to} R ₄ are hydrogen atoms, and an epoxy resin represented by k = 4 and m = 4.

YDCN-700-10: (trade name, manufactured by Tohto Kasei Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent 210, softening point 75 to 85 ° C.).

(Phenolic resin)
LF-4871: (trade name, manufactured by DIC Corporation, hydroxyl group equivalent 118, water absorption 1 mass%, heating mass reduction rate 4 mass%). The phenol resin represented by the following formula (5).

Millex XLC-LL: (trade name, manufactured by Mitsui Chemicals, Inc., phenol resin, hydroxyl group equivalent 175, softening point 77 ° C., water absorption 1 mass%, heating mass reduction rate 4 mass%). In the above general formula (3), R ₅ is a hydrogen atom and is a phenol resin in which n = 3.

HE200C-10: (trade name, manufactured by Air Water Co., Ltd., phenol resin, hydroxyl group equivalent 200, softening point 65-76 ° C., water absorption 1 mass%, heating mass reduction rate 4 mass%). In addition, it is a phenol resin represented by the said General formula (4).

HE910-10: (trade name, manufactured by Air Water Co., Ltd., phenol resin, hydroxyl group equivalent 101, softening point 83 ° C., water absorption 1 mass%, heating mass reduction rate 3 mass%). The phenol resin represented by the following general formula (6).

(Inorganic filler)
SC2050-HLG: (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 μm).

SC1030-HJA: (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size of 0.25 μm).

Aerosil R972: (trade name, manufactured by Nippon Aerosil Co., Ltd., silica, average particle size 0.016 μm).

(High molecular weight component)
Acrylic rubber HTR-prototype 24: (sample name, manufactured by Teikoku Chemical Industry Co., Ltd., weight average molecular weight 230,000, glycidyl functional group monomer ratio 8%, Tg: -7 ° C).

Acrylic rubber HTR-860P: (sample name, manufactured by Teikoku Chemical Industry Co., Ltd., weight average molecular weight 800,000, glycidyl functional group monomer ratio 3%, Tg: −7 ° C.).

(Coupling agent)
NUC A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane).

NUC A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane).

(Curing accelerator)
Cureazole 2PZ-CN: (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole).

  Next, the obtained varnish was filtered through a 100-mesh filter and vacuum degassed. The varnish after vacuum defoaming was applied onto a polyethylene terephthalate (PET) film having a thickness of 38 μm as a base film. The applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes. Thus, an adhesive sheet provided with a film adhesive having a thickness of 60 μm in a B-stage state on a PET film as a base film was obtained.

<Evaluation of various physical properties>
For the film-like adhesive of the obtained adhesive sheet, measurement of shear viscosity at 80 ° C., wire embedding property, tensile elastic modulus after heat treatment at 150 ° C./1 hour, mold embedding property, adhesive strength, and reflow resistance Sexuality was evaluated.

[Shear viscosity measurement]
The shear viscosity at 80 ° C. of the film adhesive was evaluated by the following method.

  After peeling and removing the base film from the three adhesive sheets, three film adhesives were bonded at 70 ° C. to obtain a laminate having a thickness of 180 μm. Next, the laminate was punched into a 10 mm square in the thickness direction to obtain a square laminate having a 10 mm square and a thickness of 180 μm. A circular aluminum plate jig having a diameter of 8 mm was set in a dynamic viscoelastic device ARES (manufactured by Rheometric Scientific), and a laminate of a film-like adhesive punched out was set here. Then, it measured, raising temperature at a temperature increase rate of 5 degree-C / min, giving a distortion of 5% at 35 degreeC, and recorded the value of the shear viscosity of 80 degreeC as a measured value.

[Evaluation of wire embedding]
The wire embedding property of the film adhesive was evaluated by the following method.

  The film-like adhesive (thickness 60 μm) of the adhesive sheet obtained above was attached to a semiconductor wafer (8 inches) having a thickness of 50 μm at 70 ° C. Next, they were diced into 7.5 mm squares to obtain chips.

  The adhesive of the chip | tip separated into pieces was crimped | bonded to the board | substrate 300 for evaluation shown in FIG. 7 on the conditions of 120 degreeC, 0.10 MPa, and 1 second, and the sample (FIG. 8) was obtained. In the evaluation substrate 300 shown in FIG. 7, the first-stage semiconductor element 9a is mounted on a semiconductor element by using a general semiconductor film adhesive 1a (FH-900-20 manufactured by Hitachi Chemical Co., Ltd.). Bonded to the supporting member 10. A wire 11 is connected to the semiconductor element 9a.

  The sample shown in FIG. 8 is obtained by pressure-bonding a chip (second-stage semiconductor element 9b + film adhesive 1 (before curing)) to an evaluation substrate 300.

  Regarding the obtained sample, the lower part of all the wires was observed by SEM as shown in FIG. 90% or more of the total number of wires (total of 64), and when the lower part is satisfactorily filled with a film adhesive, the wire embeddability is good and “Good”. When the wire which is less than 90%, it was set as “x”.

[Measurement of tensile modulus after heating at 150 ° C./1 hour]
The tensile modulus of the film adhesive after heating at 150 ° C./1 hour was evaluated by the following method.

  After peeling off and removing the base film from the two adhesive sheets, two film adhesives were bonded at 70 ° C. to obtain a laminate having a thickness of 120 μm. Next, the laminate was cut into a thickness of 4 mm and a length of 30 mm in the thickness direction, and heated in an oven at 150 ° C. for 1 hour. The obtained sample was set in a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UMB Co., Ltd.), subjected to a tensile load, measured at a frequency of 10 Hz, and a temperature rising rate of 3 ° C./min. The measured value was recorded as the tensile elastic modulus after heating at 150 ° C./1 hour.

[Evaluation of mold embedding]
The mold embedding property of the film adhesive was evaluated by the following method.

  Similar to the sample obtained in [Evaluation of wire embedding], a film adhesive 60 μm of the adhesive sheet obtained above was attached to a semiconductor wafer having a thickness of 50 μm at 70 ° C. Next, they were diced into 7.5 mm squares to obtain chips. The adhesive of the chip | tip separated into pieces was crimped | bonded to the board | substrate for evaluation as described in FIG. 7 on the conditions of 120 degreeC, 0.10 MPa, and 1 second, and the sample (FIG. 8) was obtained.

  The obtained sample was heated at 125 ° C. for 60 minutes, and a thermal history equivalent to wire bonding (150 ° C., 1 hour) was given to the sample using a hot plate. Subsequently, resin sealing was performed under conditions of 175 ° C./6.7 MPa / 90 seconds using a mold sealing material (Hitachi Chemical Industry Co., Ltd., trade name “CEL-9750ZHF10), and conditions of 175 ° C. for 5 hours. Then, the sealing material was cured to obtain a package.

  A part of the obtained package was analyzed with an ultrasonic imaging apparatus SAT (manufactured by Hitachi Construction Machinery, product number FS200II, probe: 120 MHz) to confirm the embeddability after sealing. The evaluation criteria for embeddability are as follows.

○: Void ratio is less than 15%.

X: The void ratio is 15% or more.

[Measurement of adhesive strength]
The die shear strength (adhesion strength) of the film adhesive was measured by the following method.

  First, the film adhesive 60 μm of the adhesive sheet obtained above was attached to a semiconductor wafer having a thickness of 400 μm at 70 ° C. Next, they were diced to 5.0 mm square to obtain chips. A sample was obtained by thermocompression bonding at 120 ° C., 0.1 MPa for 5 seconds on a 625 μm-thick semiconductor chip whose surface was treated with SiN on the film adhesive side of the separated chip. Thereafter, the adhesive of the obtained sample was cured by step cure in order of 125 ° C. for 1 hour, 150 ° C. for 1 hour, and 170 ° C. for 3 hours. Further, the sample after curing of the adhesive was allowed to stand for 168 hours under the conditions of 85 ° C. and 60 RH%. Thereafter, the sample was allowed to stand for 30 minutes under conditions of 25 ° C. and 50% RH, and the die shear strength was measured at 250 ° C., and this was taken as the adhesive strength.

[Evaluation of reflow resistance]
The reflow resistance of the film adhesive was evaluated by the following method.

  Similar to the sample obtained in [Evaluation of wire embedding], a film adhesive 60 μm of the adhesive sheet obtained above was attached to a semiconductor wafer having a thickness of 50 μm at 70 ° C. Next, they were diced into 7.5 mm squares to obtain chips. The adhesive of the chip | tip separated into pieces was crimped | bonded to the board | substrate for evaluation as described in FIG. 7 on the conditions of 120 degreeC, 0.10 MPa, and 1 second, and the sample (FIG. 8) was obtained.

  The obtained sample was heated at 125 ° C. for 60 minutes, and a thermal history equivalent to wire bonding (150 ° C., 1 hour) was given to the sample using a hot plate. Next, using a mold sealing material (manufactured by Hitachi Chemical Co., Ltd., trade name “CEL-9750ZHF10), resin sealing was performed under the conditions of 175 ° C./6.7 MPa / 90 seconds, and 175 ° C. for 5 hours. The sealing material was cured under conditions to obtain a package.

Twenty-four packages described above were prepared, and these were exposed to the environment (level 3, 30 ° C., 60 RH%, 192 hours) determined by JEDEC to absorb moisture. Subsequently, the package after moisture absorption was passed through an IR reflow furnace (260 ° C., maximum temperature 265 ° C.) three times. The case where none of the breakage of the package, the change in thickness, the peeling at the interface between the film adhesive and the semiconductor element was observed was evaluated as “◯”, and the case where even one was observed was evaluated as “X”. The results are shown in Tables 3 and 4.

  As is apparent from the results shown in Table 3, the adhesive sheets of Examples 1 to 5 are superior to the adhesive sheets of Comparative Examples 1 and 2 in terms of wire embedding and have a heat of 150 ° C./1 hour or less. Even after the history, it was confirmed that the gap disappeared by sealing under a sealing condition of 175 ° C./6.7 MPa / 90 seconds, and the reflow resistance was excellent.

  According to the present invention, even a semiconductor element made of an ultra-thin chip can be mounted with a wire embedded structure without causing a gap on the bonding surface, and has a film shape excellent in heat resistance, moisture resistance and reflow resistance. An adhesive, an adhesive sheet, and a semiconductor device manufactured using the film adhesive can be provided.

DESCRIPTION OF SYMBOLS 100,110 Adhesive sheet 1 Film adhesive 2 Base film 3 Cover film 120 Dicing die bonding integrated adhesive sheet 6 Adhesive layer 7 Base film 200, 210 Semiconductor device 1 'Hardened material 9a of film adhesive 9b Semiconductor element 10 Semiconductor element mounting support member 11 Wire 12 Sealing material 13 Terminal 300 Sample

Claims (5)

(A) 100 parts by mass of a thermosetting resin having a softening point of 100 ° C. or less and an epoxy resin having an epoxy equivalent of 140 or more or a phenol resin having a hydroxyl group equivalent of 140 or more of 20% by mass or more,
(B) 30 to 100 parts by mass of a high molecular weight component having a crosslinkable functional group in a monomer ratio of 3 to 15%, a weight average molecular weight of 100,000 to 800,000, and a Tg of -50 to 50 ° C;
(C) 10 to 60 parts by mass of an inorganic filler,
(D) A film-like adhesive comprising 0 to 0.07 parts by mass of a curing accelerator.   The shear viscosity at 80 ° C. before curing is 200 to 11000 Pa · s or less, and the tensile modulus at 180 ° C. after heating at 150 ° C. for 1 hour is 20 MPa or less. Film adhesive.   The film adhesive according to claim 1 or 2, wherein an adhesive force to a chip on which a SiN thin film is formed is 1.0 MPa or more.   The film adhesive according to any one of claims 1 to 3 is pressure-bonded to a substrate having a wire at 80 to 180 ° C, 0.01 to 0.50 MPa, and 0.5 to 2.0 seconds. A semiconductor device obtained by sealing under a sealing condition of 170 to 180 ° C./6.0 to 10.0 MPa / 90 seconds with a thermal history of 150 ° C./1 hour or less in the manufacturing process.   The adhesive sheet which has a film adhesive as described in any one of Claims 1-3, and a base film.