KR102429209B1 - Semiconductor device manufacturing method, film adhesive and adhesive sheet - Google Patents

Abstract

A 1st mounting process which electrically connects a 1st semiconductor element via a 1st wire on a board|substrate, A lamination process of affixing a film adhesive on the single side|surface of a 2nd semiconductor element larger than the area of a 1st semiconductor element, A film The 2nd mounting which embeds a 1st wire and a 1st semiconductor element in a film adhesive by arrange|positioning the 2nd semiconductor element with a mold adhesive so that a film adhesive may cover a 1st semiconductor element, and mounting a film adhesive. Including a process, the shear viscosity in 80 degreeC measured on the conditions of a frequency 79.0 Hz, and a film adhesive is 300 Pa.s or less, and a film adhesive is measured on the conditions of frequency 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz. When the shear viscosity at 80 ° C is Y (Pa s) and the frequency is X (Hz), and the relationship between X and Y is approximated by power and expressed as Y = aX ^b , the slope (b) is -0.67 or less. The method of manufacturing a semiconductor device.

Description

Semiconductor device manufacturing method, film adhesive and adhesive sheet

The present invention relates to a method for manufacturing a semiconductor device, a film adhesive, and an adhesive sheet.

With the multifunctionality of mobile phones, etc., stacked MCPs (Multi Chip Papers) obtained by laminating semiconductor elements in multiple stages and having a high capacity are widespread, and for the mounting of semiconductor elements, an advantageous film adhesive in the mounting process is die bonding. It is widely used as an adhesive for dragons. A chip embedding type package is mentioned as an example of the multistage lamination|stacking package using such a film adhesive. This refers to a package in which a semiconductor element is mounted (compressed) on the lowest layer in a multi-layered package, and a high-flowing film adhesive is mounted (pressed) so as to embed the semiconductor element thereon, and is used for mobile phones and portable audio equipment. It is mounted on a memory package, etc.

Connection reliability is mentioned as one of the important characteristics required for semiconductor devices such as the stacked MCP, and in order to improve connection reliability, development of a film adhesive in consideration of characteristics such as heat resistance, moisture resistance, and reflow resistance is carried out. have. As such a film adhesive, for example, Patent Document 1 proposes an adhesive sheet having a thickness of 10 to 250 µm, containing a specific high molecular weight component, a resin containing a thermosetting component containing an epoxy resin as a main component, and a filler. Moreover, in patent document 2, the adhesive composition containing the mixture containing an epoxy resin and a phenol resin, and an acrylic copolymer is proposed.

The connection reliability of a semiconductor device is greatly influenced also by whether a semiconductor element is mounted without generating a space|gap in an adhesive surface. For this reason, using a high-flowing film adhesive so that a semiconductor element can be mounted without generating a gap, or using a film adhesive with a low elastic modulus so that the generated gap can be lost in the sealing process of a semiconductor element, etc. The design is made. For example, Patent Document 3 proposes an adhesive sheet having a low viscosity and a low tack strength.

Patent Document 1: International Publication No. 2005/103180 Patent Document 2: Japanese Patent Laid-Open No. 2002-220576 Patent Document 3: Japanese Patent Application Laid-Open No. 2009-120830

In order to embed a chip (semiconductor element) at the time of mounting, the adhesive film etc. of the said patent documents 1 and 3 contain many epoxy resins etc. for the purpose of high fluidization. For this reason, thermosetting proceeds by the heat generated during the manufacturing process of the semiconductor device, and the adhesive film becomes highly elastic. may not be lost. On the other hand, since the adhesive film of Patent Document 2 has a low modulus of elasticity, voids can be lost in the sealing step, but the protrusion (bleed) of the resin from the chip end after mounting increases, and the package portion around the chip There is a risk of contamination. These subjects will be described in more detail below.

In recent years, high-speed operation of the chip-embedded semiconductor device has become important. Conventionally, a controller chip for controlling the operation of the semiconductor device has been disposed at the top of the stacked semiconductor devices. However, in order to realize high-speed operation, a semiconductor device packaging technology in which the controller chip is disposed at the bottom has been developed. As one form of such a package, a package in which a film adhesive used when mounting a semiconductor element in the second stage among semiconductor elements laminated in multiple stages is thickened and a controller chip is embedded in the film adhesive is attracting attention. have. The film adhesive used for such a use requires high fluidity that can fill the level difference caused by the unevenness of the controller chip and the wire connected to the controller chip and the substrate surface, but has the same high fluidity as the adhesive sheet of Patent Document 2 By using a film, these subjects can be solved.

However, the problem here is that, when a high-flowing resin is used, the exudation (bleeding) of the resin from the tip end of the chip increases. In particular, in the semiconductor device of a chip embedding type, since the film adhesive is thickened for embedding, and the volume of the chip|tip to be embedded is excluded, the amount of bleed becomes more remarkable. Pads and circuits for connecting wires are formed around the chip, and if the amount of bleed is large, there is a risk of contaminating the surface of the package including these. Therefore, while high fluidity for embedding a controller chip and a wire is required for a film adhesive, in order to suppress bleed|bleeding, it is necessary to keep fluidity|liquidity low.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a semiconductor device capable of achieving both good chip embedding properties and low bleed properties. Another object of this invention is to provide the film adhesive used for the said manufacturing method, and the dicing and die-bonding integrated adhesive sheet using the same.

MEANS TO SOLVE THE PROBLEM The present inventors repeated earnest research on adjustment of the physical property of the film adhesive used when manufacturing a semiconductor device for the solution of the said subject. And the present inventors discovered that coexistence of favorable chip embedding property and low bleed property could be implement|achieved by using the film adhesive which the shear viscosity in a specific frequency is a specific range, and satisfy|fills a specific relationship with a shear viscosity and frequency. .

That is, in order to solve the above problems, the present invention provides a first mounting process for electrically connecting a first semiconductor element through a first wire on a substrate, and one side of a second semiconductor element larger than the area of the first semiconductor element The lamination process of affixing a film adhesive, and arrange|positioning so that the said film adhesive may cover the said 1st semiconductor element, and mounting the said film adhesive for the 2nd semiconductor element by which the said film adhesive was affixed, said A second mounting step of embedding a first wire and the first semiconductor element in the film adhesive, wherein the film adhesive has a shear viscosity of 300 Pa·s at 80°C measured under the condition of a frequency of 79.0 Hz Below, the shear viscosity at 80 ° C measured under the conditions of frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz and 79.0 Hz is Y (Pa s), and the frequency is X (Hz), the relationship between X and Y Provided is a method for manufacturing a semiconductor device, wherein when Y=aX ^b by power approximation of , the slope b is −0.67 or less.

According to the manufacturing method of the said semiconductor device, the film adhesive used for mounting (compression bonding) a 2nd semiconductor element on a 1st semiconductor element has a shear viscosity at 80 degreeC measured under the conditions of a frequency of 79.0 Hz 300 Pa.s By being below, a 1st semiconductor element and a 1st wire can be embedded with a film adhesive, suppressing generation|occurrence|production of a space|gap. Moreover, the protrusion (bleed) of the film adhesive from the edge part of a 2nd semiconductor element can be suppressed because the said inclination (b) calculated|required from the relationship between frequency and shear viscosity of a film adhesive is -0.67 or less. have. Thereby, the semiconductor device with favorable chip embedding property and bleed|bleeding suppressed can be obtained.

In addition, in the adhesive film as described in Patent Documents 1 and 3, since the elastic modulus rises rapidly during thermosetting, the stress applied to the chip during mounting cannot be sufficiently released, and the chip warps every adhesive film. A phenomenon called On the other hand, according to the manufacturing method of the semiconductor device of this invention, stress is hard to remain|survive in a film adhesive by using the film adhesive which satisfy|fills the above-mentioned conditions, and a chip|tip curvature can also be suppressed.

In this invention, as for the said film adhesive, it is preferable that the shear viscosity in 80 degreeC measured on the conditions of a frequency of 0.1 Hz is 25000 Pa.s or more. When the shear viscosity in a frequency of 0.1 Hz is 25000 Pa.s or more, the protrusion (bleed) of the film adhesive from the edge part of a 2nd semiconductor element can be suppressed further.

In this invention, it is preferable that the said film adhesive contains a liquid epoxy resin at 25 degreeC as a thermosetting component. Thereby, it is easy to further improve chip embedding property.

In this invention, it is preferable that the said film adhesive contains a thermoplastic component. Thereby, it is easy to further improve chip embedding property.

In this invention, it is preferable that the said film adhesive contains an inorganic filler. Thereby, the handleability of a film adhesive improves, etc., and protrusion (bleed) of the film adhesive from the edge part of a 2nd semiconductor element can be suppressed further.

The present invention also provides a semiconductor device in which a first semiconductor element is electrically connected to a substrate through a first wire, and a second semiconductor element larger than an area of the first semiconductor element is mounted on the first semiconductor element. WHEREIN: As a film adhesive used for mounting the said 2nd semiconductor element and embedding the said 1st wire and the said 1st semiconductor element, the shear viscosity at 80 degreeC measured under the condition of a frequency of 79.0 Hz is 300 Pa s or less, and the shear viscosity at 80 ° C measured under the conditions of frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz is Y (Pa s) and the frequency is X (Hz), X and Y A film adhesive with a slope (b) of -0.67 or less is provided when a relationship with the approximation is expressed by Y=aX ^b by power approximation.

ADVANTAGE OF THE INVENTION According to the film adhesive of this invention, chip embedding property is favorable and it is possible to obtain the semiconductor device by which bleed was suppressed. Moreover, according to the film adhesive of this invention, it is possible to obtain the semiconductor device by which the chip curvature was suppressed.

It is preferable that the shear viscosity in 80 degreeC measured on the conditions of the frequency 0.1Hz of the film adhesive of this invention is 25000 Pa.s or more.

It is preferable that the film adhesive of this invention contains a liquid epoxy resin at 25 degreeC as a thermosetting component.

It is preferable that the film adhesive of this invention contains a thermoplastic component.

It is preferable that the film adhesive of this invention contains an inorganic filler.

This invention also provides the dicing die-bonding integrated adhesive sheet which laminated|stacked the said film adhesive of this invention on the dicing tape.

ADVANTAGE OF THE INVENTION According to the dicing and die-bonding integrated adhesive sheet of this invention, it is possible to obtain the semiconductor device with which chip|tip embedding property was favorable and bleed|bleeding was suppressed. Moreover, according to the dicing and die-bonding integrated adhesive sheet of this invention, it is possible to obtain the semiconductor device in which the chip|tip warp was suppressed.

In the dicing and die-bonding integrated adhesive sheet of the present invention, the thickness of the film adhesive is preferably 20 to 200 µm. A sufficient thickness is required to sufficiently fill the unevenness of the first semiconductor element, the first wire, and the wiring circuit of the substrate with the film adhesive, but in order to reduce bleed, the film adhesive is preferably thinner, so both are compatible. It is preferable that the thickness of a viewpoint to a film adhesive exists in the said range.

It is preferable that the dicing die-bonding integrated adhesive sheet of this invention has the cover film provided on the surface on the opposite side to the surface in which the said dicing tape of the said film adhesive was provided. By having a cover film, a film adhesive can be protected.

ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor device which can make favorable chip embedding property and low bleed property compatible can be provided. This invention can also provide the film adhesive used for the said manufacturing method, and the dicing die-bonding integrated adhesive sheet using the same.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the film adhesive which concerns on embodiment of this invention.
2 is a view showing an adhesive sheet according to an embodiment of the present invention.
3 is a view showing an adhesive sheet according to another embodiment of the present invention.
4 is a view showing an integrated dicing and die bonding adhesive sheet according to another embodiment of the present invention.
5 is a view showing a dicing and die-bonding integrated adhesive sheet according to another embodiment of the present invention.
6 is a diagram illustrating a semiconductor device.
7 is a diagram illustrating a method of manufacturing a semiconductor device according to an embodiment of the present invention.
FIG. 8 is a diagram showing a subsequent process of FIG. 7 .
Fig. 9 is a view showing a subsequent process of Fig. 8;
FIG. 10 is a diagram illustrating a subsequent process of FIG. 9 .
FIG. 11 is a view showing a subsequent process of FIG. 10 .
It is a positive logarithmic graph which shows the relationship between the shear viscosity (Y) of the film adhesive of Example 1 and the comparative example 1, and frequency (X).
It is the ultrasonic diagnostic image which observed the generation|occurrence|production state of the space|gap (void) in the evaluation sample using the film adhesive of Example 4 and Comparative Examples 1 and 5.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described in detail, referring drawings. In the following description, the same code|symbol is attached|subjected to the same or equivalent part, and the overlapping description is abbreviate|omitted. In addition, the positional relationship, such as up-down, left-right, etc., shall be based on the positional relationship shown in drawing unless otherwise indicated. In addition, the dimensional ratios in the drawings are not limited to the illustrated ratios. In addition, "(meth)acryl" in this specification means "acryl" and "methacryl" corresponding to it.

(film adhesive)

1 : is sectional drawing which shows typically the film adhesive 10 which concerns on this embodiment. The film adhesive 10 is thermosetting, it is formed by shape|molding the adhesive composition which can become a fully hardened|cured material (C stage) state after a hardening process into a film form through a semi-hardened (B stage) state.

As for the film adhesive 10, the shear viscosity in 80 degreeC measured on the conditions of frequency 79.0 Hz is 300 Pa.s or less. The shear viscosity at 80° C. measured under the condition of a frequency of 79.0 Hz affects embedding properties at the time of embedding semiconductor elements such as controller chips and wires with the film adhesive 10, and this value is 300 Pa·s or less As a result, low elasticity enough to sufficiently embed semiconductor elements and wires can be obtained, and good chip embedding properties can be obtained. It is preferable that it is 295 Pa.s or less, and, as for the shear viscosity of the film adhesive 10 in 80 degreeC measured on the conditions of frequency 79.0 Hz, it is more preferable that it is 295 Pa.s or less from a viewpoint of further improving chip embedding property. And, it is more preferable that it is 285 Pa.s or less. In addition, the shear viscosity of the film adhesive 10 in 80 degreeC measured on the conditions of a frequency of 79.0 Hz may be 200 Pa.s or more from a viewpoint of further reducing the exudation (bleed) of resin from a chip edge part. , 230 Pa.s or more may be sufficient, and 250 Pa.s or more may be sufficient.

The film adhesive 10 makes the shear viscosity in 80 degreeC measured on the conditions of frequency 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz Y (Pa*s) and a frequency X (Hz), X and When the relation of Y is expressed as Y=aX ^b by power approximation, the slope b is −0.67 or less. The slope (b) represents the height of the frequency dependence of the shear viscosity, and the smaller the value (the larger the absolute value), the higher the frequency dependence, and the shear viscosity at a relatively high frequency and the shear viscosity at a relatively low frequency. the difference between And when this inclination (b) is -0.67 or less, the shear viscosity from after embedding to tableware is relative, making low the shear viscosity of the film adhesive 10 at the moment of heat-pressing and embedding a semiconductor element and a wire. can be enlarged, and it is possible to suppress the resin from flowing after embedding. As a result, exudation (bleeding) of the resin from the chip edge can be reduced. From the viewpoint of further reducing bleed, the slope (b) is preferably -0.68 or less, more preferably -0.69 or less, and still more preferably -0.70 or less. In addition, the inclination (b) may be -0.80 or more from a viewpoint of not impairing film formability and handling property.

From the viewpoint of further reducing the exudation (bleed) of the resin from the chip edge, the film adhesive 10 preferably has a shear viscosity of 25000 Pa·s or more at 80° C. measured under the conditions of a frequency of 0.1 Hz, It is more preferable that it is 27000 Pa.s or more, It is still more preferable that it is 29000 Pa.s or more, It is especially preferable that it is 30000 Pa.s or more. In addition, the shear viscosity at 80° C. measured under the condition of a frequency of 0.1 Hz is preferably 50000 Pa·s or less, more preferably 40000 Pa·s or less, from the viewpoint of film formability and workability such as dicing, It is more preferable that it is 35000 Pa.s or less.

When it is intended to lower the shear viscosity at 80 ° C. measured under the condition of the frequency 79.0 Hz of the film adhesive 10, for example, increasing the content of the component (a1) described later, increasing the content of the component (b1) ( It can adjust by methods, such as reducing content of b2) component, reducing content of (c) component, or making small a particle size. In addition, when you want to make high the shear viscosity in 80 degreeC measured on the conditions of the frequency 0.1 Hz of the film adhesive 10, for example, increasing the quantity of (a2) component mentioned later, content of (c) component It can be adjusted by methods, such as lengthening and increasing the molecular weight of (b2) component. In addition, even if it is other than the said method, the shear viscosity in 80 degreeC measured on the conditions of frequency 79.0 Hz of the film adhesive 10 and 0.1 Hz is by adjusting the kind and quantity of (a)-(e) component mentioned later. , it is possible to adjust

When the slope (b) is to be lowered, there are cases where it is difficult to adjust only the method of adjusting the shear viscosity at the frequency of 79.0 Hz or 0.1 Hz as described above. When the slope (b) is to be lowered, for example, a method of adjusting the epoxy equivalent of the epoxy resin of the component (a2) described later or the hydroxyl equivalent of the phenol resin is exemplified. (a2) By making small the epoxy equivalent of the epoxy resin of a component, or the hydroxyl equivalent of a phenol resin, the frequency dependence of the shear viscosity of the film adhesive 10 is raised, and there exists a tendency which inclination (b) can be made small further. In addition, other than the said method, it is possible to adjust the slope (b) by adjusting the kind and quantity of (a)-(e) components mentioned later.

The shear viscosity of the film adhesive 10 uses a dynamic viscoelastic device (for example, the brand name "ARES" by TA Instruments company, etc.), and provides 5% of deformation|transformation to the film adhesive 10 hold|maintained at 80 degreeC. You can adjust the frequency while measuring. More specifically, a parallel cone-plate jig having, for example, a diameter of 8 mm is set in a dynamic viscoelastic device, a sample for measurement of the film adhesive 10 is set here, and 5 at 80°C for the sample for measurement. By changing the frequency to 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz in discrete mode while giving a strain of %, the shear viscosity for each frequency can be measured. The thickness of the film adhesive 10 used as a sample for a measurement can be 440 micrometers, for example. The film adhesive 10 used as a sample for a measurement is a state before hardening (non-hardened state), for example, it is a semi-hardened (B stage) state. In addition, conditions, such as the diameter of a parallel cone-plate jig and the thickness of the sample for measurement, are not limited to the above-mentioned conditions, You may make it other conditions. When these conditions are input in advance to a measuring device as a measurement parameter, the measurement result which corrected the influence is obtained. Therefore, even if the conditions are changed, the same value is obtained as a corrected measurement result.

The slope (b) is the shear viscosity Y (Pa·s) and the frequency X (Hz), from the shear viscosity for each frequency measured by the above method, the relationship between X and Y is approximated to the power of Y = aX ^b It can be calculated as the value of b when expressed as In addition, in the power approximation formula, a and b are integers, and b represents the slope of the approximate power curve of X and Y when the coordinates (X, Y) are plotted in a bi-logarithmic graph.

Moreover, as for the film adhesive 10, it is preferable that the adhesive force after hardening to the board|substrate which apply|coated AUS308 is 1.0 Mpa or more. In this case, the connection reliability of the semiconductor device obtained becomes more favorable.

In order to make the adhesive force of the board|substrate which apply|coated AUS308 and the film adhesive 10 after hardening into 1.0 MPa or more, for example, it can adjust by reducing the quantity of (a2) component mentioned later, or increasing the content of (c) inorganic filler. have. Moreover, it is preferable to add the coupling agent etc. which are mentioned later from a viewpoint of obtaining sufficient adhesiveness.

Although the component contained in the film adhesive 10 is not specifically limited, For example, (a) thermosetting component, (b) thermoplastic component, (c) inorganic filler, (d) hardening accelerator, (e) other components, etc. are included can do. By adjusting the kind and quantity of these (a)-(e) components, the characteristic of the film adhesive 10 can be adjusted.

(a) thermosetting components

A thermosetting resin is mentioned as a thermosetting component. In particular, an epoxy resin, a phenol resin, etc. are preferable as a thermosetting component from a viewpoint of the heat resistance and moisture resistance required when mounting a semiconductor element.

Examples of the epoxy resin and the phenol resin include those having a softening point of 60°C or less or liquid at room temperature (25°C) (a1), and are not particularly limited as long as they have an adhesive action by curing. As an epoxy resin corresponding to such (a1) component, the bifunctional epoxy resin etc. which modified|denatured the bisphenol A type epoxy resin, the bisphenol F type epoxy resin, the bisphenol E type epoxy resin, etc. are mentioned. Moreover, as a phenol resin corresponding to (a1) component, EP-4088 by ADEKA Corporation, Celoxide 2021P by Daicel Corporation, etc. are mentioned.

As the epoxy resin and the phenol resin, for example, (a2) an epoxy resin having a softening point of more than 60°C (solid at room temperature (25°C)) and an epoxy equivalent of 500 or less, and a softening point of more than 60°C (solid at room temperature), and a hydroxyl equivalent A phenol resin of 300 or less is mentioned. As the epoxy resin corresponding to the component (a2), as a dicyclopentadiene type epoxy resin, HP-7200L (epoxy equivalents 242 to 252), HP-7200 (epoxy equivalents, 254 to 264) manufactured by DIC Corporation, HP As -7200H (epoxy equivalent 272-284) and cresol novolak-type epoxy resin, YDCN-700-10 (epoxy equivalent 198-210) by Shin-Nikka Epoxy Seijo Co., Ltd. etc. are mentioned. Moreover, as a phenol resin corresponding to (a2) component, a dicyclopentadiene type phenol resin etc. are mentioned. As an example of the phenol resin applicable to such (a2) component, the HE series (For example, HE-100C-30 (hydroxyl group equivalent 174) made by Air Water Corporation] etc. is mentioned.

(a2) The epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin corresponding to the component are preferably 500 or less from the viewpoint of reducing the value of the slope (b), more preferably 400 or less, more preferably 300 or less It is preferable, and it is especially preferable that it is 200 or less. In addition, 100 or more may be sufficient as the epoxy equivalent of the epoxy resin corresponding to (a2) component, and the hydroxyl equivalent of resin of phenol.

(a2) Although it does not specifically limit as a component, The epoxy resin which has a dicyclopentadiene skeleton (dicyclopentadiene type epoxy resin), or a phenol resin which has a dicyclopentadiene skeleton (dicyclopentadiene type phenol resin) It is preferable to include These may be used together. By using these, it is easy to make the value of the said inclination b in the film adhesive 10 further smaller (an absolute value further increases). Moreover, by using these, the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive of an uncured state is low, and the shear viscosity in 80 degreeC measured on the conditions of a frequency 0.1 Hz to enlarge Since it is easy, it is easy to make good chip embedding property and low bleed property compatible.

You may use together epoxy resins other than the above-mentioned (a1) component and (a2) component as (a) thermosetting component. For example, novolak-type epoxy resins, such as a phenol novolak-type epoxy resin and a cresol novolak-type epoxy resin, etc. can be used. Moreover, as an epoxy resin, generally known epoxy resins, such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic-containing epoxy resin, and an alicyclic epoxy resin, can also be used.

Moreover, you may use together phenol resins other than the above-mentioned (a1) component and (a2) component as (a) thermosetting resin. For example, phenolite KA and TD series by DIC Corporation, Mirex XLC-series and XL series (for example, Mirex XLC-LL) by Mitsui Chemicals, etc. are mentioned. In addition, from the viewpoint of heat resistance, the water absorption rate after 48 hours input to a constant temperature and humidity chamber at 85°C and 85% RH is 2 mass% or less, and the heating mass reduction rate at 350°C (temperature increase rate: 5) measured by a thermogravimetric analyzer (TGA). °C/min, atmosphere: nitrogen) is preferably less than 5 mass%.

(a) In the case of using an epoxy resin and a phenol resin together as a thermosetting component, the compounding ratio of the epoxy resin and the phenol resin is preferably 0.70/0.30 to 0.30/0.70 in the equivalent ratio of the epoxy equivalent and the hydroxyl equivalent, respectively, 0.65/0.35 It is more preferable to be set to -0.35/0.65, it is still more preferable to be set to 0.60/0.40 to 0.40/0.60, and it is especially preferable to set it as 0.60/0.40 to 0.50/0.50. When a compounding ratio is in the said range, it becomes easy to obtain the film adhesive 10 which has outstanding sclerosis|hardenability, fluidity|liquidity, etc.

(a1) It is preferable that it is 5-60 mass % on the basis of the total mass of (a) component, and, as for content of a component, it is more preferable that it is 10-55 mass %. Thereby, it becomes easy to ensure the fluidity|liquidity of the film adhesive before hardening.

(a2) It is preferable that it is 40-95 mass % on the basis of the total mass of (a) component, and, as for content of a component, it is more preferable that it is 45-90 mass %. (a2) When content of a component is in the said range (especially more than the said lower limit), it is easy to make high the shear viscosity in 80 degreeC measured on the conditions of the frequency 0.1Hz of the film adhesive 10 of an uncured state, It becomes easy to reduce the exudation (bleeding) of resin from a chip edge part.

(a) It is preferable that it is 30-80 mass % on the basis of the total mass of the film adhesive 10, and, as for content of a component, it is more preferable that it is 40-60 mass %. (a) It becomes easy to reduce the shear viscosity in 80 degreeC measured on the condition of the frequency 79.0 Hz condition of the film adhesive of an uncured state that content of a component is 40 mass % or more, and embedding property becomes more favorable, The hardening characteristic as a thermosetting adhesive agent becomes favorable, it becomes easy to suppress further that a film adhesive peels off from a board|substrate, or a bubble generate|occur|produces inside, and adhesive reliability improves. On the other hand, when content of (a) component is 80 mass % or less, it will be easy to control the stability at the time of coating and the reliability after mounting.

(b) thermoplastic component

(b) As the thermoplastic component, a high molecular weight thermoplastic component having a crosslinkable functional group such as a glycidyl group, and a low molecular weight thermoplastic component having a crosslinkable functional group such as a carboxyl group or a hydroxyl group other than a glycidyl group It is preferable to use together . For example, (b) component (b1) has 3 to 15 mass% of a monomer unit having at least a glycidyl group as a crosslinkable functional group, based on the total amount of the monomer unit, has a weight average molecular weight of 700,000 to 2 million, and has a glass transition temperature (Tg) of -50 to 50°C, and (b2) a monomer unit having no glycidyl group as a crosslinkable functional group and a crosslinkable functional group other than a glycidyl group (such as a carboxyl group and a hydroxyl group) as a monomer unit It is preferable to have 1-7 mass % in a ratio with respect to the total amount, and to contain the thermoplastic component whose weight average molecular weights are 500,000-900,000, and the glass transition temperature (Tg) is -50-50 degreeC.

(b) As a component, an acrylic resin (acrylic resin) which is a thermoplastic resin is preferable, and a glass transition temperature (Tg) is -50 degreeC - 50 degreeC, glycidyl acrylate, glycidyl methacrylate, etc. An acrylic resin such as an epoxy group-containing (meth)acrylic copolymer obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a crosslinkable functional group is more preferable.

As such an acrylic resin, an epoxy group-containing (meth)acrylic acid ester copolymer, an epoxy group-containing acrylic rubber, etc. can be used, and an epoxy group-containing acrylic rubber is more preferable. Epoxy group-containing acrylic rubber contains acrylic acid ester as a main component, and mainly contains a copolymer such as butyl acrylate and acrylonitrile, and a copolymer such as ethyl acrylate and acrylonitrile. It is an acrylic rubber having an epoxy group. .

Moreover, as a crosslinkable functional group of (b) component, other than an epoxy group, crosslinkable functional groups, such as an alcoholic or phenolic hydroxyl group and a carboxyl group, are mentioned.

In component (b1), from the viewpoint of further improving the adhesive force after curing, the monomer unit having a crosslinkable functional group is preferably 3 to 15 mass%, more preferably 5 to 10 mass%, based on the total amount of the monomer unit. .

In component (b2), from the viewpoint of further improving the adhesive force after curing, the monomer unit having a crosslinkable functional group is preferably 1 to 7 mass%, more preferably 1 to 5 mass%, based on the total amount of the monomer unit. do.

(b1) It is preferable that the weight average molecular weights of a component are 700,000 or more and 2 million or less. (b1) When the weight average molecular weight of a component is 700,000 or more, film film-forming property will become still more favorable, and the adhesive strength and heat resistance of the film adhesive 10 can be raised further. (b1) Since it becomes easy to reduce the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive 10 of an uncured state that the weight average molecular weight of a component is 2 million or less, embedding property is further get better

(b2) It is preferable that the weight average molecular weights of a component are 500,000 or more and 900,000 or less. (b2) When the weight average molecular weight of a component is 500,000 or more, the effect of improving film-forming property by combined use with (b1) component becomes still more favorable, and the frequency of 0.1 Hz of the film adhesive 10 of a non-hardened state. It is easy to increase the shear viscosity at 80°C measured under the conditions of (b2) Since it becomes easy to reduce the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive 10 of an uncured state that the weight average molecular weight of a component is 900,000 or less, embedding property is further get better Moreover, the machinability of the film adhesive 10 of a non-hardened state may improve that the weight average molecular weight of (b2) component is 900,000 or less, and the quality of dicing may become more favorable.

A weight average molecular weight is a polystyrene conversion value obtained using the analytical curve by standard polystyrene according to the gel permeation chromatography method (GPC).

Moreover, it is preferable that the glass transition temperature (Tg) of (b1) component and (b2) component is -50-50 degreeC. When the glass transition temperature (Tg) is 50°C or less, the flexibility of the film adhesive 10 is further improved. On the other hand, since the softness|flexibility of the film adhesive 10 does not become high that glass transition temperature Tg is -50 degreeC or more too much, when dicing a semiconductor wafer, it is easy to cut|disconnect the film adhesive 10. For this reason, it is easy to suppress that dicing property deteriorates by generation|occurrence|production of a burr.

(b) It is preferable that it is -20 degreeC - 40 degreeC, and, as for the glass transition temperature (Tg) of the whole component, it is more preferable that it is -10 degreeC - 30 degreeC. Thereby, since it becomes easy to cut|disconnect the film adhesive 10 at the time of dicing, it is hard to generate|occur|produce resin shavings, and it is easy to make the adhesive force and heat resistance of the film adhesive 10 high, and the film adhesive in an uncured state ( 10), it becomes easy to express the high fluidity|liquidity of it.

The glass transition temperature (Tg) can be measured using a thermal differential scanning calorimeter (eg, "Thermo Plus 2" manufactured by Rigaku Corporation).

(b) The component can also be obtained as a commercial item. For example, as the component (b1), acrylic rubber HTR-860P-3CSP (trade name, manufactured by Nagase Chemtex Co., Ltd.) etc. can be mentioned. This compound has a glycidyl moiety as a crosslinkable moiety, and is a compound in which an acrylic rubber containing an acrylic acid derivative is used as a base resin, and has a weight average molecular weight of 1 million and a glass transition temperature (Tg) of 15°C. Moreover, as (b2) component, SG-708-6 (a brand name, the Nagase Chemtex Co., Ltd. make) etc. are mentioned. This compound is an acrylic rubber-based compound having a carboxyl group and a hydroxyl group, and has a weight average molecular weight of 700,000 and a glass transition temperature (Tg) of 4°C.

(b1) It is preferable that it is 50 mass % or more on the basis of the total mass of (b) component, and, as for content of component, it is more preferable that it is 55-90 mass %. (b1) Since it becomes easy to reduce the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive 10 of a non-hardened state as content of a component is 50 mass % or more, embedding property is still more favorable becomes On the other hand, when content of (b1) component is 90 mass % or less, the adhesive strength after hardening becomes still more favorable.

(b2) It is preferable that it is 10 mass % or more on the basis of the total mass of (b) component, and, as for content of a component, it is more preferable that it is 10-45 mass %. (b2) Since hardening advances maintaining the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive 10 of a non-hardened state as content of a component is in the said range, hardening|curing material is favorable can get

(b) It is preferable that it is 20-80 mass parts with respect to 100 mass parts of (a) component, and, as for content of a component, it is more preferable that it is 30-50 mass parts. (b) When content of a component is 30 mass parts or more, the fall of the flexibility of a film adhesive can be suppressed, and it is easy to make it highly elastic after a heating, and can suppress bleed. On the other hand, when content of (b) component is 80 mass parts or less, it becomes easy to reduce the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive 10 of a non-hardened state, and fluidity|liquidity improves further Therefore, embedding property becomes more favorable.

(c) inorganic fillers

(c) As a component, the improvement of the dicing property of the film adhesive 10 in a B-stage state, the improvement of the handleability of the film adhesive 10, the improvement of thermal conductivity, adjustment of shear viscosity (melt viscosity), thixotropic A silica filler etc. are preferable from viewpoints, such as provision of property and the improvement of adhesive force.

(c) For the purpose of improving the dicing property of the film adhesive 10 of a non-hardened state, and fully expressing the adhesive force after hardening, it is preferable that (c) component contains 1 or more types of fillers from which an average particle diameter differs. As the component (c), for example, (c1) the first filler having an average particle diameter of 0.2 µm or more for the purpose of improving the dicing properties of the film adhesive 10 in an uncured state, and (c2) The purpose of sufficiently expressing the adhesive force after curing Although the second filler having an average particle diameter of less than 0.2 µm is mentioned, as long as dicing properties and adhesive force can be ensured, they may be used individually or in combination.

Let the average particle size be a value obtained when acetone is analyzed as a solvent using a laser diffraction particle size distribution analyzer. It is more preferable that the difference between the average particle diameters of the first and second fillers is large enough to be able to discriminate that each filler is included when analyzed with a particle size distribution analyzer.

When content of (c1) component is used in combination with (c2) component, it is preferable that it is 30 mass % or more on the basis of the total mass of (c) component. (c1) When content of a component is 30 mass % or more, it becomes easy to suppress the deterioration of the fluidity|liquidity of the deterioration of the dicing property of a film, and the film adhesive 10 of a non-hardened state.

When content of (c2) component is used in combination with (c1) component, it is preferable that it is 50 mass % or more on the basis of the total mass of (c) component. (c2) Since it becomes easy to reduce the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive 10 of a non-hardened state because content of a component is 50 mass % or more, embedding property is still more favorable It becomes easy to fully express the adhesive force after hardening.

(c) It is preferable that it is 0.05-0.5 micrometer, and, as for the average particle diameter of the whole component, it is more preferable that it is 0.2-0.4 micrometer. (c) When the average particle diameter of the whole component is in the said range, it becomes easy to reduce the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive 10 of a non-hardened state, and embedding property is still more favorable becomes

(c) It is preferable that it is 30-70 mass parts with respect to 100 mass parts of (a) component, and, as for content of component, it is more preferable that it is 40-65 mass parts. (c) When content of a component is more than the said lower limit, it becomes easy to suppress the deterioration of the dicing property of the film adhesive 10 of a non-hardened state, and the fall of the adhesive force after hardening, of the film adhesive 10 of a non-hardened state There exists a tendency that it becomes easy to make high the shear viscosity at 80 degreeC measured on the condition of a frequency of 0.1 Hz, and to become easy to reduce the exudation (bleeding) of resin from a chip edge part. On the other hand, when content of (c) component is below the said upper limit, it becomes easy to reduce the shear viscosity in 80 degreeC measured on the conditions of the frequency 79.0 Hz of the film adhesive of a non-hardened state, and embedding property is more favorable It tends to be easy to suppress the increase in the elastic modulus after curing.

(d) curing accelerator

For the purpose of obtaining good curability, it is preferable to use (d) a curing accelerator. (d) As a component, an imidazole type compound is preferable from a reactive viewpoint. Moreover, when the reactivity of (d) component is too high, not only will a shear viscosity rise easily by the heating in the manufacturing process of the film adhesive 10, but there exists a tendency for deterioration by time-lapse|temporality to be easy to be caused. On the other hand, when the reactivity of (d) component is too low, there exists a tendency for sclerosis|hardenability of the film adhesive 10 to fall easily. When the film adhesive 10 is mounted in a product with not fully hardened|cured, sufficient adhesiveness will not be acquired but the connection reliability of a semiconductor device may deteriorate.

Moreover, when there is too little content of (d) component, there exists a tendency for sclerosis|hardenability of the film adhesive 10 to fall and it is easy. On the other hand, when there is too much content of (d) component, there exists a tendency not only to become easy to raise by the heating in the manufacturing process of the film adhesive 10, but also to cause deterioration by time-lapse|temporality easily. From such a viewpoint, it is preferable that it is 0-0.20 mass part with respect to 100 mass parts of (a) component, and, as for content of (d) component, it is more preferable that it is 0.05-0.20 mass part.

(e) other ingredients

In addition to the above components, from the viewpoint of improving the adhesion, other components that can be used in this technical field may also be used in an appropriate amount. As such a component, a coupling agent is mentioned, for example. Examples of the coupling agent include γ-ureidepropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, and the like. can be heard

It is preferable that it is 0-5 mass parts with respect to 100 mass parts of (a) component, and, as for content of a coupling agent, it is more preferable that it is 0.1-1 mass part. When content of a coupling agent is more than the said lower limit, the wettability to the board|substrate used as a chip surface or to-be-adhered body improves, and there exists a tendency for adhesive force and reliability to improve. On the other hand, when content of a coupling agent is below the said upper limit, there exists a tendency for it easy to suppress generation|occurrence|production of the bubble accompanying the expansion at the time of heating.

(film adhesive)

The film adhesive 10 is, for example, a process of forming a layer of varnish by applying a varnish of an adhesive composition containing the above component on a base film, a process of removing a solvent from the layer of varnish by heat drying, a base film It can be obtained according to the removal process.

A varnish can be prepared by mixing, kneading|mixing, etc. the adhesive composition containing the said component in an organic solvent. For mixing and kneading, a disperser such as a normal stirrer, a rock grinder, three rolls, or a ball mill can be used. These devices can be used in an appropriate combination. The varnish can be applied by, for example, a coater. There is no restriction|limiting in particular as long as the conditions for heat-drying of a varnish are conditions in which the used organic solvent fully volatilizes, For example, it can be set as 0.1 to 90 minutes at 60-200 degreeC.

There is no restriction|limiting as an organic solvent as long as it can melt|dissolve, knead|mix, or disperse|distribute the said component uniformly, A conventionally well-known thing can be used. Examples of such a solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, Nmethylpyrrolidone, toluene, and xylene. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. from a point which a drying rate is quick and price is cheap.

There is no restriction|limiting in particular as said base film, For example, a polyester film (polyethylene terephthalate film, etc.), a polypropylene film [OPP (Oriented PolyPropylene) film, etc.], a polyimide film, a polyetherimide film, a polyethernaphthalate film , a methylpentene film, and the like.

It is preferable that the thickness of the film adhesive 10 is 20-200 micrometers so that unevenness|corrugation, such as a 1st wire, a 1st semiconductor element, and the wiring circuit of a board|substrate, can fully be embedded. Moreover, when thickness is 20 micrometers or more, sufficient adhesive force becomes easy to be acquired, and when it is 200 micrometers or less, it becomes easy to meet the request|requirement of the size reduction of a semiconductor device. It is more preferable that it is 30-200 micrometers, and, as for the thickness of the film adhesive 10 from such a viewpoint, it is still more preferable that it is 40-150 micrometers.

As a method of obtaining the thick film adhesive 10, the method of bonding the film adhesive 10 comrades is mentioned.

(Adhesive sheet)

The adhesive sheet 100 is equipped with the film adhesive 10 on the base film 20, as shown in FIG. The adhesive sheet 100 can be obtained by not removing the base film 20 in the process of obtaining the film adhesive 10.

The adhesive sheet 110 is equipped with the cover film 30 further on the surface on the opposite side to the base film 20 of the adhesive sheet 100, as shown in FIG. As the cover film 30, a PET film, a PE film, an OPP film, etc. are mentioned, for example.

The film adhesive 10 may be laminated|stacked on a dicing tape. By using the dicing and die-bonding integrated adhesive sheet obtained by this, the lamination process to a semiconductor wafer can be performed at once, and work efficiency improvement is possible.

As a dicing tape, plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyimide film, etc. are mentioned, for example. If necessary, the dicing tape may be subjected to surface treatment such as a primer treatment, a UV treatment, a corona discharge treatment, a polishing treatment, an etching treatment, and the like.

It is preferable that the dicing tape has adhesiveness. As such a dicing tape, the thing which provided adhesiveness to the said plastic film, and the thing which provided the adhesive layer on the single side|surface of the said plastic film is mentioned.

As such a dicing die-bonding integrated adhesive sheet, the adhesive sheet 120 shown in FIG. 4, and the adhesive sheet 130 shown in FIG. 5 are mentioned. As shown in FIG. 4, the adhesive sheet 120 supports the dicing tape 60 in which the adhesive layer 50 was provided on the base film 40 which can ensure elongation when tensile tension is applied. It has a structure in which the film adhesive 10 was provided on the adhesive layer 50 of the dicing tape 60 as this. The adhesive sheet 130 has a structure in which the base film 20 was further provided on the surface of the film adhesive 10 in the adhesive sheet 120, as shown in FIG.

As the base film 40, the said plastic film described with respect to a dicing tape is mentioned. In addition, the pressure-sensitive adhesive layer 50 may be formed using, for example, a resin composition including a liquid component and a thermoplastic component and having an appropriate tack strength. In order to obtain the dicing tape 60, the resin composition is applied on the base film 40 and dried to form the pressure-sensitive adhesive layer 50, the pressure-sensitive adhesive layer 50 once formed on another film such as a PET film. ) and a method of bonding the base film 40 and the like.

As a method of laminating|stacking the film adhesive 10 on the dicing tape 60, the method of directly applying and drying the varnish of the said adhesive composition on the dicing tape 60, The varnish on the dicing tape 60 The method of screen-printing, the method of producing the film adhesive 10 beforehand, and laminating|stacking this on the dicing tape 60 by press and hot-roll lamination, etc. are mentioned. Lamination by hot roll lamination is preferable from the viewpoint of continuous production and good efficiency.

The thickness in particular of the dicing tape 60 is not restrict|limited, According to the thickness of the film adhesive 10, and the use of the dicing die-bonding integrated adhesive sheet, it can determine based on the knowledge of those skilled in the art suitably. In addition, when the thickness of the dicing tape 60 is 60 µm or more, a decrease in handleability, tearing due to expansion in the process of peeling the semiconductor element separated by dicing from the dicing tape 60, etc. are suppressed. tends to be easy to do. On the other hand, when the thickness of the dicing tape is 180 µm or less, it is easy to achieve both economical efficiency and handleability. From the above, it is preferable that it is 180 micrometers or less, and, as for the thickness of the dicing tape 60, it is more preferable that it is 60-180 micrometers.

(Semiconductor device)

6 is a cross-sectional view illustrating a semiconductor device. As shown in FIG. 6 , the semiconductor device 200 is a semiconductor device in which a second semiconductor element Waa is superimposed on a first semiconductor element Wa. In detail, the first semiconductor element Wa is electrically connected to the substrate 14 through the first wire 88 , and the first semiconductor element Wa is disposed on the first semiconductor element Wa. ), the first wire 88 and the first semiconductor element Wa are attached to the film adhesive 10 by mounting (compression bonding) of the second semiconductor element Waa of the second stage through the film adhesive 10 . ) is a wire-embedded (chip-embedded) semiconductor device. Further, in the semiconductor device 200 , the substrate 14 and the second semiconductor element Waa are also electrically connected via the second wire 98 , and the second semiconductor element Waa is connected by the sealing material 42 . It is sealed.

The thickness of the first semiconductor element Wa is 10 to 170 µm, and the thickness of the second semiconductor element Waa is 20 to 400 µm. The first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200 .

The substrate 14 includes an organic substrate 90 having circuit patterns 84 and 94 formed thereon. The first semiconductor element Wa is mounted (compressed) on the circuit pattern 94 via the adhesive 41, and the second semiconductor element Waa is the first semiconductor element Wa mounted (compressed). It is mounted on the board|substrate 14 via the film adhesive 10 so that the circuit pattern 94, the 1st semiconductor element Wa, and a part of the circuit pattern 84 which have not been formed may be covered (compression bonding). The unevenness|corrugation resulting from the circuit patterns 84 and 94 on the board|substrate 14 is filled with the film adhesive 10. As shown in FIG. Then, the second semiconductor element Waa, the circuit pattern 84 and the second wire 98 are sealed by the resin sealing material 42 .

(Method for manufacturing semiconductor device)

A semiconductor device is measured under the condition of a first mounting process of electrically connecting a first semiconductor element through a first wire on a substrate, and one side of a second semiconductor element larger than the area of the first semiconductor element at a frequency of 79.0 Hz The shear viscosity at 80 ° C being 300 Pa s or less, and the shear viscosity at 80 ° C measured under the conditions of frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz and 79.0 Hz, Y (Pa s), the frequency When X (Hz) is used and the relationship between X and Y is approximated to power and expressed as Y=aX ^b , the lamination step of affixing a film adhesive having a slope (b) of -0.67 or less, and a product to which the film adhesive is affixed 2 semiconductor elements are arrange|positioned so that a film adhesive may cover a 1st semiconductor element, and the 2nd mounting process of embedding a 1st wire and a 1st semiconductor element in a film adhesive is included by crimping|bonding a film adhesive. It is manufactured according to the manufacturing method of the device. Hereinafter, the manufacturing procedure of the semiconductor device 200 will be taken as an example and will be described in detail.

First, as shown in FIG. 7 , a first semiconductor element Wa having an adhesive 41 is mounted on a circuit pattern 94 on a substrate 14 , and the substrate 14 is connected via a first wire 88 . ), the circuit pattern 84 and the first semiconductor element Wa are electrically connected (first mounting process).

Next, the adhesive sheet 100 is laminated on one side of a semiconductor wafer (eg, 8-inch size, 50 µm in thickness), and the base film 20 is peeled off to adhere the film adhesive 10 to one side of the semiconductor wafer. do. And, after bonding the dicing tape 60 to the film adhesive 10, it dices to a predetermined size (for example, a 7.5 mm square on one side), peeling the dicing tape 60, shown in FIG. Thus, the 2nd semiconductor element Waa to which the film adhesive 10 was affixed is obtained (lamination process).

It is preferable to perform a lamination process at 50-100 degreeC, and it is more preferable to perform it at 60-80 degreeC. A semiconductor wafer and favorable adhesiveness can be acquired that the temperature of a lamination process is 50 degreeC or more. Since it is suppressed that the film adhesive 10 flows too much during a lamination process as the temperature of a lamination process is 100 degrees C or less, it can prevent that a change of thickness etc. are caused.

As the dicing method, a method of blade dicing using a rotary blade, a method of cutting the film adhesive 10 or both the wafer and the film adhesive 10 with a laser, and general purpose such as stretching under normal temperature or cooling conditions methods and the like.

And the 2nd semiconductor element Waa to which the film adhesive 10 was affixed is mounted on the board|substrate 14 to which the 1st semiconductor element Wa was connected via the wire 88 (press bonding). As specifically, shown in FIG. 9, the 2nd semiconductor element Waa to which the film adhesive 10 was affixed is arrange|positioned so that the film adhesive 10 may cover the 1st semiconductor element Wa, and Then, as shown in FIG. 10, the 2nd semiconductor element Waa is fixed to the board|substrate 14 by crimping|bonding the 2nd semiconductor element Waa to the board|substrate 14 (2nd mounting process). It is preferable that a 2nd mounting process pressure-bonds the film adhesive 10 for 0.5 to 3.0 second on 80-180 degreeC and 0.01-0.50 Mpa conditions. After a 2nd mounting process, you may pressurize and heat the film adhesive 10 for 5 minutes or more on 60-175 degreeC and 0.3-0.7 Mpa conditions further.

Subsequently, as shown in FIG. 11 , after electrically connecting the substrate 14 and the second semiconductor element Waa through the second wire 98 , the circuit pattern 84 , the second wire 98 and The entire second semiconductor element Waa is sealed with a sealing material 42 at 170 to 180° C. and 5 to 8 MPa (sealing step). Through these processes, the semiconductor device 200 may be manufactured.

As described above, in the semiconductor device 200, a first semiconductor element is electrically connected to a substrate through a first wire, and a second semiconductor element larger than the area of the first semiconductor element is formed on the first semiconductor element. A mounted semiconductor device WHEREIN: A 2nd semiconductor element is mounted, and it is used for embedding a 1st wire and a 1st semiconductor element. The shear viscosity at 80 degreeC measured under the condition of a frequency of 79.0 Hz is 300 Pa.s Below, the shear viscosity at 80 ° C measured under the conditions of frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz and 79.0 Hz is Y (Pa s), and the frequency is X (Hz), the relationship between X and Y When approximating to power and showing as Y=aX ^b , it is manufactured using the film adhesive whose slope (b) is -0.67 or less. By using the film adhesive which satisfy|fills the said conditions, a 2nd mounting process WHEREIN: A 1st semiconductor element and a 1st wire can be embedded with a film adhesive, suppressing generation|occurrence|production of a space|gap, and of a 2nd semiconductor element The protrusion (bleed) of the film adhesive from an edge part can be suppressed. Moreover, by using the film adhesive which satisfy|fills the said condition, it can suppress that stress is hard to remain|survive in a film adhesive in a 2nd mounting process, and a 2nd semiconductor element warps for every film adhesive.

As mentioned above, although preferred embodiment of this invention was described, this invention is not necessarily limited to embodiment mentioned above. For example, you may make a change suitably in the range which does not deviate from the meaning as follows.

In the semiconductor device 200, the substrate 14 is an organic substrate 90 in which circuit patterns 84 and 94 are formed in two portions on the surface, respectively, but the substrate 14 is not limited to this, a lead frame, etc. A metal substrate of

The semiconductor device 200 has a configuration in which the second semiconductor element Waa is stacked on the first semiconductor element Wa and the semiconductor elements are stacked in two stages, but the configuration of the semiconductor device is not limited to this. does not A third semiconductor element may be further laminated on the second semiconductor element Waa, and a plurality of semiconductor elements may be further laminated on the second semiconductor element Waa. As the number of stacked semiconductor elements increases, the capacity of the resulting semiconductor device can be increased.

In the manufacturing method of the semiconductor device which concerns on this embodiment, in a lamination process, the adhesive sheet 100 shown in FIG. 2 is laminated on the single side|surface of a semiconductor wafer, By peeling off the base film 20, the film adhesive 10 ), but the adhesive sheet used at the time of lamination is not limited to this. Instead of the adhesive sheet 100, the dicing and die-bonding integrated adhesive sheets 120 and 130 shown in FIGS. 4 and 5 can be used. In this case, there is no need to separately adhere the dicing tape 60 when the semiconductor wafer is diced.

A lamination process WHEREIN: You may laminate not the semiconductor wafer but the semiconductor element obtained by separating a semiconductor wafer into pieces on the adhesive sheet 100. In this case, the dicing process can be omitted.

Example

Hereinafter, the present invention will be described in more detail by way of Examples. However, the present invention is not limited to the following examples.

(Examples 1 to 4 and Comparative Examples 1 to 8)

With the product name and composition ratio (unit: parts by mass) shown in Tables 1 and 2, each component was blended according to the following procedure to prepare a varnish. First, an epoxy resin as a thermosetting resin, a phenol resin, and an inorganic filler were respectively weighed, the composition was obtained, cyclohexanone was further added, and it stirred and mixed. After adding and stirring the acrylic rubber as a thermoplastic resin to this, it stirred until the coupling agent and hardening accelerator were further added and each component became uniform, and the varnish was obtained. In addition, the product name of each component in Table 1 and Table 2 means the following.

(epoxy resin)

HP-7200L: brand name, manufactured by DIC Corporation, dicyclopentadiene type epoxy resin, epoxy equivalent 242 to 252, softening point 50 to 60° C., solid at 25° C.

VG3101L: trade name, manufactured by PRINTEC Co., Ltd., polyfunctional epoxy resin, epoxy equivalent 210, softening point 39-46°C, solid at 25°C

YDCN-700-10: brand name, manufactured by Shin-Nikka Epoxy Seijo Co., Ltd., cresol novolak type epoxy resin, epoxy equivalent 210, softening point 75-85°C, solid at 25°C

EXA-830CRP: manufactured by DIC Corporation, bisphenol F-type epoxy resin, epoxy equivalent 155 to 163, molecular weight 298.3, liquid at 25°C

CELLOXIDE 2021P: trade name, manufactured by Daicel Co., Ltd., 3',4'-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, epoxy equivalent 128 to 145, molecular weight 252.3, liquid at 25°C

(phenolic resin)

HE-100C-30: brand name, manufactured by Air Water Corporation, phenol resin, hydroxyl equivalent 175, softening point 79°C, water absorption 1% by mass, heating mass reduction rate 4% by mass, solid at 25°C

(inorganic filler)

SC2050-HLG: trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size 0.50 μm

(organic filler)

EXL-2655: trade name, manufactured by Rohm & Haas Japan Co., Ltd., core-shell type organic fine particles, average particle size 200 m

X-52-854: trade name, manufactured by Shin-Etsu Chemical Co., Ltd., silicone resin powder, average particle diameter of 0.7 µm

X-52-7030: trade name, manufactured by Shin-Etsu Chemical Co., Ltd., silicone composite powder, average particle diameter 0.8 μm

(Coupling agent)

A-189: brand name, Momentive Performance Materials Japan Kodo Co., Ltd., γ-mercaptopropyltrimethoxysilane

A-1160: brand name, Momentive Performance Materials Japan Kodo Co., Ltd., γ-ureide propyltriethoxysilane

(curing accelerator)

2PZ-CN: trade name, manufactured by Shikoku Chemical Co., Ltd., 1-cyanoethyl-2-phenylimidazole

(acrylic rubber)

HTR-860P-3CSP: sample name, manufactured by Nagase Chemtex Co., Ltd., weight average molecular weight 1 million, glycidyl functional group monomer ratio 3 mass%, Tg 15°C

SG-708-6: sample name, manufactured by Nagase Chemtex Co., Ltd., weight average molecular weight 700,000, acid value 9 mgKOH/g, Tg 4°C

Next, the obtained varnish was filtered through a 100-mesh filter and vacuum defoamed. The varnish after vacuum defoaming was apply|coated on the polyethylene terephthalate (PET) film (38 micrometers in thickness) which performed the release process which is a base film. Application was performed on condition of a coating speed of 1 m/min using a coating machine (the model number is unknown because it is a made-to-order product, manufactured by Technosmart Co., Ltd.). The applied varnish was dried by heating at 90°C for 5 minutes and then at 140°C for 5 minutes in two steps. In this way, the adhesive film provided with the 20-micrometer-thick film adhesive (1st film adhesive) in a B-stage state was obtained on PET film. Subsequently, the obtained adhesive film and the dicing tape (made by Hitachi Maxel Co., Ltd., brand name: SD-3004) provided with the adhesive layer (thickness 30 micrometers) on the base film (thickness 90 micrometers) were applied to the film form of an adhesive film. It bonded so that the surface on the side of an adhesive agent and the surface by the side of the adhesive layer of a dicing tape might closely_contact|adhere, and the 1st dicing and die-bonding integrated adhesive sheet was obtained. Moreover, except having changed the thickness of the film adhesive into 110 micrometers, it carried out similarly to the above, and obtained the 2nd dicing die-bonding integrated adhesive sheet provided with the 110-micrometer-thick 2nd film adhesive.

<Evaluation of various physical properties>

The obtained dicing and die-bonding integrated adhesive sheet was evaluated as follows. An evaluation result is shown in Table 1 and Table 2.

[Shear Viscosity Measurement]

, 두께 440 ㎛의 측정용 샘플을 얻었다. 동적 점탄성 장치 ARES(TA 인스트루먼트사 제조)에 직경 8 ㎜의 페럴렐 콘-플레이트 지그를 셋트하고, 여기에 측정용 샘플을 셋트하였다. 측정은, 측정용 샘플에 대하여, 80℃에서 5％의 변형을 부여하면서 discrete mode에서 0.1 ㎐, 1.0 ㎐, 10.0 ㎐, 79.0 ㎐로 주파수를 변화시켜, 주파수마다의 전단 점도를 측정하였다.The shear viscosity of the film adhesive was evaluated according to the following method. Peel the base film and dicing tape from the first dicing die-bonding integrated adhesive sheet to take out only the first film adhesive (110 μm in thickness), and place the first film adhesive on a hot plate maintained at 70° C., The same 1st film adhesive was thermally laminated thereon. This was repeated for 4 layers, and the laminate sample of the 440-micrometer-thick film adhesive was produced. By punching this laminate sample into a circular shape with a diameter of 8 mm, 8 mm

, a sample for measurement having a thickness of 440 µm was obtained. A parallel cone-plate jig having a diameter of 8 mm was set in a dynamic viscoelastic device ARES (manufactured by TA Instruments), and a sample for measurement was set there. The measurement was performed by changing the frequency to 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz in discrete mode while applying a strain of 5% at 80 ° C. to the measurement sample, and the shear viscosity for each frequency was measured.

Shear viscosity is Y (Pa·s) and frequency is X (Hz), and from the measured shear viscosity for each frequency, the relationship between X and Y is approximated by power, Y = aX ^b , and the value of b is obtained. . Here, a and b are integers, and b denotes the slope of the approximate power curve of X and Y when the coordinates (X, Y) are plotted as a bi-logarithmic graph. These results are shown in Tables 1 and 2. Moreover, the positive logarithm graph which shows the relationship between the shear viscosity of the film adhesive of Example 1 and the comparative example 1, and a frequency in FIG. 12 is shown.

[Production of evaluation samples]

The embedding property and bleed amount of a film adhesive were evaluated according to the following method. The base film on the side of the 1st film adhesive of the 1st dicing die-bonding integrated adhesive sheet is peeled, and a 50-micrometer-thick semiconductor wafer (silicon wafer) and a wafer ring are affixed to the 1st film adhesive at a stage temperature of 70 degreeC. Thus, a dicing sample was prepared. Next, the dicing sample was cut using a full-auto dicer DFD-6361 (trade name, manufactured by Disco Corporation). Cutting conditions were performed with a blade rotation speed of 40000 rpm, a cutting speed of 50 mm/sec, and a chip size of 3.2 mm x 5.5 mm, and by picking up a small piece from the cut dicing sample, the first film adhesive (thickness 20 µm) 1 A semiconductor device was obtained.

The second dicing die-bonding integrated adhesive sheet was used and a semiconductor wafer having a thickness of 100 μm was used, and the product having a first film adhesive was used except that the chip size was 5.7 mm × 12 mm. By the method similar to the method of producing 1 semiconductor element, the 2nd semiconductor element which has a 2nd film adhesive (110 micrometers in thickness) was obtained.

The 1st semiconductor element which has the obtained 1st film adhesive, and the 2nd semiconductor element which has a 2nd film adhesive were press-pressed machine (The die bonder manufactured by Besi, brand name: Esec 2100sD PPPplus), AUS308 (Taiyo Holdings Co., Ltd.) It was mounted on the evaluation board|substrate to which the Geisha make, thickness 260 micrometers) was apply|coated. Mounting conditions are 120 degreeC, 1.5 second, 0.2 MPa so that the 1st semiconductor element which has a 1st film adhesive is first crimped|bonded by the conditions of 120 degreeC, 1 second, and 0.3 Mpa, and a 1st semiconductor element is embedded from the top. The 2nd semiconductor element which has a 2nd film adhesive under the conditions of was crimped|bonded. At this time, the position alignment was carried out so that a 1st semiconductor element might come to the center of a 2nd semiconductor element. Thereby, an evaluation sample was obtained.

[Evaluation of bleed amount]

About the evaluation sample obtained by the said method, the upper surface of the 2nd semiconductor element was observed using the microscope (manufactured by Geiens, Inc., trade name: VHX-5000). The amount of bleed (micrometer) was calculated|required by making the edge part of a 2nd semiconductor element a starting point and measuring the protrusion width of the 2nd film adhesive from an edge part. At this time, the maximum value of the protrusion width was made into the bleed amount. A result is shown in Table 1 and Table 2.

[Evaluation of reclaimability]

(Filling property before curing)

About the evaluation sample obtained by the said method, the whole sample was observed in the reflection mode at 75 MHz using the ultrasonic digital imaging apparatus (Insight Corporation make, trade name: IS-350). The embedding property before hardening was evaluated by whether a space|gap was confirmed in the layer inside of a 2nd film adhesive. The embedding property was evaluated according to the following criteria. A result is shown in Table 1 and Table 2. Moreover, the ultrasonic diagnostic image which observed the generation|occurrence|production state of the space|gap (void) in the evaluation sample using the film adhesive of Example 4 and Comparative Examples 1 and 5 in FIG. 13 is shown.

(double-circle): A space|gap (void) was not recognized.

(circle): The area ratio of a space|gap (void) is less than 5 % with respect to the area except the area of the 1st semiconductor chip from the area of the 2nd film adhesive after mounting.

(triangle|delta): The area ratio of the space|gap (void) is 5 % or more and less than 10 % with respect to the area except the area of the 1st semiconductor chip from the area of the 2nd film adhesive after mounting.

x: The area ratio of a space|gap (void) is 10 % or more with respect to the area except the area of the 1st semiconductor chip from the area of the 2nd film adhesive after mounting.

(Filling properties after curing)

After evaluation of embedding property before hardening, the evaluation sample was thrown into pressurization oven, it heat-processed at 140 degreeC and 0.6 Mpa for 45 minutes, and the 2nd film adhesive was hardened. After curing, embedding after curing was evaluated in the same manner as for embedding before curing. A result is shown in Table 1 and Table 2.

As can be seen from the results shown in Tables 1 and 2, in Examples 1 to 4, the ratio of voids was 5% or less in the evaluation of embedding properties before curing, and no voids were observed in the evaluation of embedding properties after curing in a pressure oven. Moreover, the amount of bleed was 70 µm or less. On the other hand, in Comparative Example 1, the ratio of voids was 5% or more and less than 10% in evaluation of embedding property before curing, and the amount of bleed was approximately twice as large as that of Example. In Comparative Examples 2 to 4, all of the bleed amounts were 80 µm or more. Moreover, in Comparative Examples 5-8, the ratio of a void is 10 % or more in evaluation of embedding property before hardening, and it was not able to lose|disappear a void even after pressure oven hardening.

10… Film adhesive, 14... substrate, 42... Resin (sealing material), 88... 1st wire, 98... 2nd wire, 200... Semiconductor devices, Wa… The first semiconductor element, Waa... A second semiconductor device.

Claims (13)

A first mounting process of electrically connecting a first semiconductor element on a substrate through a first wire;
A lamination process of affixing a film adhesive on the single side|surface of a 2nd semiconductor element larger than the area of the said 1st semiconductor element;
The said 1st wire and the said 1st semiconductor element are the said film form by arrange|positioning so that the said film adhesive may cover the said 1st semiconductor element, and mounting the said film adhesive for the 2nd semiconductor element to which the said film adhesive was affixed. Including a second mounting process embedded in the adhesive,
The film adhesive has a shear viscosity of 300 Pa·s or less at 80° C. measured under the conditions of a frequency of 79.0 Hz, and frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz at 80° C. measured under the conditions of 79.0 Hz. In the case where the shear viscosity is Y (Pa s) and the frequency is X (Hz), the relationship between X and Y is approximated to the power and expressed as Y = aX ^b , the slope (b) of the semiconductor device is -0.67 or less. manufacturing method. The method for manufacturing a semiconductor device according to claim 1, wherein the film adhesive has a shear viscosity of 25000 Pa·s or more at 80°C measured under the condition of a frequency of 0.1 Hz. The manufacturing method of the semiconductor device of Claim 1 or 2 in which the said film adhesive contains the epoxy resin liquid at 25 degreeC as a thermosetting component. The manufacturing method of the semiconductor device of Claim 1 or 2 in which the said film adhesive contains a thermoplastic component. The manufacturing method of the semiconductor device of Claim 1 or 2 in which the said film adhesive contains an inorganic filler. A semiconductor device in which a first semiconductor element is electrically connected to a substrate through a first wire, and a second semiconductor element larger than an area of the first semiconductor element is mounted on the first semiconductor element, wherein the second semiconductor element is mounted on the first semiconductor element. A film adhesive used for mounting a semiconductor element and embedding the first wire and the first semiconductor element, the film adhesive comprising:
Y ( The film adhesive whose inclination ( ^b ) is -0.67 or less when Pa.s) and a frequency are X (Hz), and power approximation of the relationship between X and Y is carried out and Y=aXb is shown. The film adhesive of Claim 6 whose shear viscosity in 80 degreeC measured on the conditions of a frequency of 0.1 Hz is 25000 Pa.s or more. The film adhesive of Claim 6 or 7 containing the epoxy resin liquid at 25 degreeC as a thermosetting component. The film adhesive of Claim 6 or 7 containing a thermoplastic component. The film adhesive of Claim 6 or 7 containing an inorganic filler. The dicing die-bonding integrated adhesive sheet which laminated|stacked the film adhesive of Claim 6 or 7 on the dicing tape. The dicing and die-bonding integrated adhesive sheet according to claim 11, wherein the film adhesive has a thickness of 20 to 200 m. The dicing and die-bonding integrated adhesive sheet according to claim 11, wherein the film adhesive has a cover film provided on a surface opposite to the surface on which the dicing tape is provided.

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