KR102553619B1 - Adhesive composition, filmy adhesive, adhesive sheet, and production method for semiconductor device - Google Patents

Adhesive composition, filmy adhesive, adhesive sheet, and production method for semiconductor device Download PDF

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KR102553619B1
KR102553619B1 KR1020227031592A KR20227031592A KR102553619B1 KR 102553619 B1 KR102553619 B1 KR 102553619B1 KR 1020227031592 A KR1020227031592 A KR 1020227031592A KR 20227031592 A KR20227031592 A KR 20227031592A KR 102553619 B1 KR102553619 B1 KR 102553619B1
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adhesive
film
semiconductor element
component
wire
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KR1020227031592A
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KR20220128678A (en
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신타로 하시모토
유키 나카무라
도모하루 야마자키
겐타 기쿠치
다이스케 마스노
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가부시끼가이샤 레조낙
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    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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Abstract

열경화성 수지와 경화제와 엘라스토머를 함유하고, 열경화성 수지가 지환식 고리를 갖는 에폭시 수지를 포함하는 접착제 조성물이 개시된다. 또한, 이러한 접착제 조성물을 이용한 필름형 접착제가 개시된다. 또한, 이러한 필름형 접착제를 이용한 접착 시트 및 반도체 장치의 제조 방법이 제공된다.An adhesive composition comprising a thermosetting resin, a curing agent and an elastomer, and the thermosetting resin comprising an epoxy resin having an alicyclic ring is disclosed. Also, a film adhesive using such an adhesive composition is disclosed. In addition, a manufacturing method of an adhesive sheet and a semiconductor device using such a film adhesive is provided.

Description

접착제 조성물, 필름형 접착제, 접착 시트 및 반도체 장치의 제조 방법{ADHESIVE COMPOSITION, FILMY ADHESIVE, ADHESIVE SHEET, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE}Method for manufacturing adhesive composition, film adhesive, adhesive sheet and semiconductor device

본 발명은 접착제 조성물, 필름형 접착제, 접착 시트 및 반도체 장치의 제조 방법에 관한 것이다.The present invention relates to an adhesive composition, a film adhesive, an adhesive sheet, and a method for manufacturing a semiconductor device.

종래, 반도체 칩과 반도체 칩 탑재용의 지지 부재와의 접합에는, 주로 은 페이스트가 사용되고 있다. 그러나, 최근의 반도체 칩의 소형화·집적화에 따라, 사용되는 지지 부재에도 소형화, 세밀화가 요구되고 있다. 한편, 은 페이스트를 이용하는 경우에는, 페이스트의 비어져 나옴 또는 반도체 칩의 기울기에 기인하는 와이어 본딩 시에 있어서의 문제점의 발생, 막 두께 제어의 곤란성, 보이드 발생 등의 문제가 생기는 경우가 있다.Conventionally, silver paste is mainly used for bonding between a semiconductor chip and a support member for mounting the semiconductor chip. However, along with the miniaturization and integration of semiconductor chips in recent years, miniaturization and miniaturization are also required for support members used. On the other hand, when silver paste is used, problems such as protrusion of the paste or inclination of the semiconductor chip may occur during wire bonding, difficulty in film thickness control, and generation of voids.

그 때문에, 최근, 반도체 칩과 지지 부재를 접합하기 위한 필름형 접착제가 사용되고 있다(예컨대, 특허문헌 1 참조). 다이싱 테이프와 다이싱 테이프 상에 적층된 필름형 접착제를 구비하는 접착 시트를 이용하는 경우, 반도체 웨이퍼의 이면에 필름형 접착제를 첩부하고, 다이싱에 의해 반도체 웨이퍼를 개편화함으로써, 필름형 접착제를 갖는 반도체 칩을 얻을 수 있다. 얻어진 필름형 접착제를 갖는 반도체 칩은, 필름형 접착제를 통해 지지 부재에 첩부하고, 열 압착에 의해 접합할 수 있다.Therefore, in recent years, the film adhesive for bonding a semiconductor chip and a support member is used (for example, refer patent document 1). In the case of using an adhesive sheet comprising a dicing tape and a film adhesive laminated on the dicing tape, the film adhesive is affixed to the back surface of a semiconductor wafer and the semiconductor wafer is separated into pieces by dicing to obtain a film adhesive. A semiconductor chip having A semiconductor chip having the obtained film adhesive can be attached to a support member through the film adhesive and bonded by thermocompression bonding.

특허문헌 1: 일본 특허 공개 제2007-053240호 공보Patent Document 1: Japanese Unexamined Patent Publication No. 2007-053240

그러나, 반도체 칩의 사이즈가 작아짐에 따라, 열 압착 시에 단위 면적당에 가해지는 힘이 커져, 필름형 접착제가 반도체 칩으로부터 비어져 나오는, 블리드라는 현상이 발생하는 경우가 있다.However, as the size of the semiconductor chip decreases, the force applied per unit area during thermal compression increases, and a phenomenon called bleed may occur in which the film adhesive protrudes from the semiconductor chip.

또한, 필름형 접착제를 와이어 매립형 필름형 접착제인 FOW(Film Over Wire) 또는 반도체 칩 매립형 필름형 접착제인 FOD(Film Over Die)로서 이용하는 경우는, 매립성을 향상시키는 관점에서, 열 압착 시에 높은 유동성이 요구된다. 그 때문에, 블리드의 발생 빈도 및 양이 더욱 증대하는 경향이 있다. 경우에 따라서는, 블리드가 반도체 칩 상면에까지 생기는 경우가 있고, 이에 의해, 전기 불량 또는 와이어 본딩 불량으로 이어질 우려가 있다.Further, when the film adhesive is used as FOW (Film Over Wire), which is a wire-embedded film adhesive, or FOD (Film Over Die), which is a semiconductor chip-embedded film adhesive, from the viewpoint of improving the embedding property, high Liquidity is required. For this reason, there is a tendency for the occurrence frequency and amount of bleed to further increase. In some cases, bleed may even occur on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.

본 발명은, 이러한 실정을 감안하여 이루어진 것이며, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능한 접착제 조성물을 제공하는 것을 주된 목적으로 한다.The present invention has been made in view of such a situation, and a main object is to provide an adhesive composition capable of suppressing bleeding while having good embedding properties during thermal compression.

본 발명의 일 측면은, 열경화성 수지와 경화제와 엘라스토머를 함유하고, 열경화성 수지가 지환식 고리를 갖는 에폭시 수지를 포함하는 접착제 조성물을 제공한다. 이러한 접착제 조성물에 의하면, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능해진다.One aspect of the present invention provides an adhesive composition containing a thermosetting resin, a curing agent and an elastomer, and the thermosetting resin including an epoxy resin having an alicyclic ring. According to this adhesive composition, it becomes possible to suppress bleed while having good embedding property at the time of thermocompression bonding.

경화제는, 페놀 수지를 포함하고 있어도 좋다. 또한, 엘라스토머는, 아크릴 수지를 포함하고 있어도 좋다.The curing agent may contain a phenol resin. Moreover, the elastomer may contain an acrylic resin.

열경화성 수지는, 지환식 고리를 갖지 않는 방향족 에폭시 수지를 더 포함하고 있어도 좋다. 지환식 고리를 갖지 않는 방향족 에폭시 수지는, 25℃에서 액체여도 좋다.The thermosetting resin may further contain an aromatic epoxy resin having no alicyclic ring. The aromatic epoxy resin having no alicyclic ring may be a liquid at 25°C.

접착제 조성물은, 무기 필러를 더 함유하고 있어도 좋다. 또한, 접착제 조성물은, 경화 촉진제를 더 함유하고 있어도 좋다.The adhesive composition may further contain an inorganic filler. Moreover, the adhesive composition may further contain a hardening accelerator.

접착제 조성물은, 기판 상에 제1 와이어를 통해 제1 반도체 소자가 와이어 본딩 접속되며, 제1 반도체 소자 상에, 제2 반도체 소자가 압착되어 이루어지는 반도체 장치에 있어서, 제2 반도체 소자를 압착하며 제1 와이어의 적어도 일부를 매립하기 위해 이용되는 것이어도 좋다.The adhesive composition is a semiconductor device in which a first semiconductor element is connected by wire bonding through a first wire on a substrate and a second semiconductor element is pressed on the first semiconductor element, and the second semiconductor element is pressed and the second semiconductor element is pressed. It may be used to embed at least a part of one wire.

본 발명은 또한, 열경화성 수지와 경화제와 엘라스토머를 함유하고, 열경화성 수지가 지환식 고리를 갖는 에폭시 수지를 포함하는 조성물의, 기판 상에 제1 와이어를 통해 제1 반도체 소자가 와이어 본딩 접속되며, 제1 반도체 소자 상에, 제2 반도체 소자가 압착되어 이루어지는 반도체 장치에 있어서, 제2 반도체 소자를 압착하며 제1 와이어의 적어도 일부를 매립하기 위해 이용되는, 접착제로서의 응용 또는 접착제의 제조를 위한 응용에 관한 것이어도 좋다.The present invention also relates to a composition comprising a thermosetting resin, a curing agent, and an elastomer, wherein the thermosetting resin includes an epoxy resin having an alicyclic ring, wherein a first semiconductor element is wire-bonded connected via a first wire on a substrate; In a semiconductor device formed by pressing a second semiconductor element onto a first semiconductor element, the second semiconductor element is pressed and used to embed at least a part of the first wire, for application as an adhesive or for manufacturing an adhesive. It may also be about

다른 측면에 있어서, 본 발명은, 전술한 접착제 조성물을 필름형으로 형성하여 이루어지는 필름형 접착제를 제공한다.In another aspect, the present invention provides a film adhesive formed by forming the above-described adhesive composition into a film form.

다른 측면에 있어서, 본 발명은, 기재와 기재 상에 마련된 전술한 필름형 접착제를 구비하는 접착 시트를 제공한다.In another aspect, the present invention provides an adhesive sheet comprising a substrate and the aforementioned film adhesive provided on the substrate.

기재는, 다이싱 테이프여도 좋다. 또한, 본 명세서에 있어서, 기재가 다이싱 테이프인 접착 시트를 「다이싱 다이본딩 일체형 접착 시트」라고 하는 경우가 있다.The base material may be a dicing tape. In addition, in this specification, an adhesive sheet whose base material is a dicing tape may be referred to as a "dicing die-bonding integrated adhesive sheet".

접착 시트는, 필름형 접착제의 기재와는 반대측의 면에 적층된 보호 필름을더 구비하여도 좋다.The adhesive sheet may further include a protective film laminated on the surface opposite to the substrate of the film adhesive.

또한, 다른 측면에 있어서, 본 발명은, 기판 상에 제1 와이어를 통해 제1 반도체 소자를 전기적으로 접속하는 와이어 본딩 공정과, 제2 반도체 소자의 편면에, 전술한 필름형 접착제를 첩부하는 라미네이트 공정과, 필름형 접착제가 첩부된 제2 반도체 소자를, 필름형 접착제를 통해 압착함으로써, 제1 와이어의 적어도 일부를 필름형 접착제에 매립하는 다이본드 공정을 구비하는, 반도체 장치의 제조 방법을 제공한다.In another aspect, the present invention provides a wire bonding process for electrically connecting a first semiconductor element on a substrate through a first wire, and a laminate for attaching the above-described film adhesive to one side of the second semiconductor element process, and a die-bonding process of embedding at least a part of the first wire in the film adhesive by crimping the second semiconductor element to which the film adhesive is attached through the film adhesive. do.

또한, 반도체 장치는, 반도체 기판 상에 제1 와이어를 통해 제1 반도체 칩이 와이어 본딩 접속되며, 제1 반도체 칩 상에, 제2 반도체 칩이 접착 필름을 통해 압착됨으로써, 제1 와이어의 적어도 일부가 접착 필름에 매립되어 이루어지는 와이어매립형의 반도체 장치여도 좋고, 제1 와이어 및 제1 반도체 칩이 접착 필름에 매립되어 이루어지는 칩 매립형의 반도체 장치여도 좋다.In addition, in the semiconductor device, a first semiconductor chip is wire-bonded and connected to a semiconductor substrate through a first wire, and a second semiconductor chip is pressed onto the first semiconductor chip through an adhesive film, thereby at least a portion of the first wire. It may be a wire-embedded semiconductor device in which a temporary adhesive film is embedded, or a chip-embedded semiconductor device in which a first wire and a first semiconductor chip are embedded in an adhesive film.

본 발명에 따르면, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능한 접착제 조성물이 제공된다. 그 때문에, 상기 접착제 조성물을 필름형으로 형성하여 이루어지는 필름형 접착제는, 반도체 칩 매립형 필름형 접착제인 FOD(Film Over Die) 또는 와이어 매립형 필름형 접착제인 FOW(Film Over Wire)로서 유용할 수 있다. 또한, 본 발명에 따르면, 이러한 필름형 접착제를 이용한 접착 시트 및 반도체 장치의 제조 방법이 제공된다.ADVANTAGE OF THE INVENTION According to this invention, the adhesive composition which can suppress bleed while having good embedding property at the time of thermal compression is provided. Therefore, the film adhesive formed by forming the adhesive composition into a film form can be useful as FOD (Film Over Die), which is a semiconductor chip-embedded film adhesive, or FOW (Film Over Wire), which is a wire-embedded film adhesive. Further, according to the present invention, a method for manufacturing an adhesive sheet and a semiconductor device using such a film adhesive is provided.

도 1은 일 실시형태에 따른 필름형 접착제를 나타내는 모식 단면도이다.
도 2는 일 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다.
도 3은 다른 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다.
도 4는 일 실시형태에 따른 반도체 장치를 나타내는 모식 단면도이다.
도 5는 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 6은 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 7은 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 8은 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 9는 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.1 is a schematic cross-sectional view showing a film adhesive according to an embodiment.
2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment.
3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment.
4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.
5 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
6 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
7 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
8 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
9 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.

이하, 도면을 적절하게 참조하면서, 본 발명의 실시형태에 대해서 설명한다. 단, 본 발명은 이하의 실시형태에 한정되는 것이 아니다.EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings suitably. However, this invention is not limited to the following embodiment.

본 명세서에 있어서, (메트)아크릴산은 아크릴산 또는 그에 대응하는 메타크릴산을 의미한다. (메트)아크릴로일기 등의 다른 유사 표현에 대해서도 동일하다.In the present specification, (meth)acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as a (meth)acryloyl group.

[접착제 조성물][Adhesive composition]

본 실시형태에 따른 접착제 조성물은, (A) 열경화성 수지와, (B) 경화제와, (C) 엘라스토머를 함유한다. 접착제 조성물은, 열경화성이며, 반경화(B 스테이지) 상태를 거쳐, 경화 처리 후에 완전 경화물(C 스테이지) 상태가 될 수 있다.The adhesive composition according to the present embodiment contains (A) a thermosetting resin, (B) a curing agent, and (C) an elastomer. The adhesive composition is thermosetting and can go through a semi-cured (B stage) state and become a fully cured product (C stage) state after curing.

<(A) 성분: 열경화성 수지><Component (A): Thermosetting Resin>

열경화성 수지는, 접착성의 관점에서, 에폭시 수지를 포함하고 있어도 좋다. 본 실시형태에 따른 접착제 조성물은, 열경화성 수지로서, (A-1) 지환식 고리를 갖는 에폭시 수지를 포함한다.The thermosetting resin may contain an epoxy resin from an adhesive viewpoint. The adhesive composition according to the present embodiment contains (A-1) an epoxy resin having an alicyclic ring as a thermosetting resin.

(A-1) 성분은, 분자 내에 지환식 고리 및 에폭시기를 갖는 화합물이다. 에폭시기는, 상기 화합물의 지환식 고리 또는 지환식 고리 이외의 부위에, 단결합 또는 연결기(예컨대, 알킬렌기, 옥시알킬렌기 등)를 통해 결합하고 있어도 좋다. 또한, 상기 화합물은, 지환식 고리를 구성하는 2개의 탄소 원자와 함께 형성되는 에폭시기를 갖는 화합물(즉, 지환식 에폭시 화합물)이어도 좋다. 열경화성 수지로서 (A-1) 성분을 포함함으로써, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능해진다.Component (A-1) is a compound having an alicyclic ring and an epoxy group in the molecule. The epoxy group may be bonded to an alicyclic ring or a site other than the alicyclic ring of the compound through a single bond or a linking group (eg, an alkylene group, an oxyalkylene group, etc.). Further, the compound may be a compound having an epoxy group formed together with two carbon atoms constituting an alicyclic ring (ie, an alicyclic epoxy compound). By including the component (A-1) as the thermosetting resin, it becomes possible to suppress bleeding while having good embedding properties at the time of thermocompression bonding.

(A-1) 성분의 에폭시 당량은, 특별히 제한되지 않지만, 90∼600 g/eq, 100∼500 g/eq, 또는 120∼450 g/eq여도 좋다. (A-1) 성분의 에폭시 당량이 이러한 범위에 있으면, 보다 양호한 반응성 및 유동성이 얻어지는 경향이 있다.The epoxy equivalent of component (A-1) is not particularly limited, but may be 90 to 600 g/eq, 100 to 500 g/eq, or 120 to 450 g/eq. When the epoxy equivalent of component (A-1) is within this range, better reactivity and fluidity tend to be obtained.

(A-1) 성분은, 예컨대, 하기 일반식 (1)∼(4)로 표시되는 에폭시 수지 중 어느 하나여도 좋다.The component (A-1) may be, for example, any of the epoxy resins represented by the following general formulas (1) to (4).

Figure 112022095635028-pat00001
Figure 112022095635028-pat00001

식 (1) 중, E는 지환식 고리를 나타내고, G는 단결합 또는 알킬렌기를 나타내고, R1은 각각 독립적으로 수소 원자 또는 1가의 탄화수소기를 나타낸다. n1은 1∼10의 정수를 나타내고, m은 1∼3의 정수를 나타낸다.In formula (1), E represents an alicyclic ring, G represents a single bond or an alkylene group, and R 1 each independently represents a hydrogen atom or a monovalent hydrocarbon group. n1 represents an integer of 1 to 10, and m represents an integer of 1 to 3.

E의 탄소 원자수는, 4∼12, 5∼11, 또는 6∼10이어도 좋다. E는, 단환이어도, 다환이어도 좋지만, 다환인 것이 바람직하고, 디시클로펜타디엔 고리인 것이 보다 바람직하다. G에 있어서의 알킬렌기는, 메틸렌기, 에틸렌기, 프로필렌기, 부틸렌기, 펜틸렌기 등의 탄소수 1∼5의 알킬렌기여도 좋다. G는, 단결합인 것이 바람직하다. R1에 있어서의 1가의 탄화수소기는, 예컨대, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기 등의 알킬기, 페닐기, 나프틸기 등의 아릴기, 피리딜기 등의 헤테로아릴기여도 좋다. R1은, 수소 원자인 것이 바람직하다.The number of carbon atoms of E may be 4 to 12, 5 to 11, or 6 to 10. E may be monocyclic or polycyclic, but is preferably polycyclic, and more preferably dicyclopentadiene ring. The alkylene group in G may be an alkylene group having 1 to 5 carbon atoms such as a methylene group, an ethylene group, a propylene group, a butylene group, and a pentylene group. It is preferable that G is a single bond. The monovalent hydrocarbon group for R 1 may be, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group and a pentyl group, an aryl group such as a phenyl group and a naphthyl group, and a heteroaryl group such as a pyridyl group. R 1 is preferably a hydrogen atom.

일반식 (1)로 표시되는 에폭시 수지는, 하기 일반식 (1a)로 표시되는 에폭시 수지여도 좋다.The epoxy resin represented by the general formula (1) may be an epoxy resin represented by the following general formula (1a).

Figure 112022095635028-pat00002
Figure 112022095635028-pat00002

식 (1a) 중, n1은 상기와 동의이다.In Formula (1a), n1 is synonymous with the above.

일반식 (1a)로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, HP-7200L, HP-7200H, HP-7200(모두 DIC 가부시키가이샤 제조), XD-1000(니혼가야쿠 가부시키가이샤 제조) 등을 들 수 있다.As commercially available products of the epoxy resin represented by the general formula (1a), for example, HP-7200L, HP-7200H, HP-7200 (both manufactured by DIC Corporation), XD-1000 (manufactured by Nihon Kayaku Co., Ltd.), etc. can be heard

Figure 112022095635028-pat00003
Figure 112022095635028-pat00003

식 (2) 중, R2는 2가의 탄화수소기를 나타낸다.In formula (2), R 2 represents a divalent hydrocarbon group.

R2에 있어서의 2가의 탄화수소기는, 예컨대, 메틸렌기, 에틸렌기, 프로필렌기, 부틸렌기, 펜틸렌기 등의 알킬렌기, 페닐렌기, 나프틸렌기 등의 아릴렌기, 피리딜렌기 등의 헤테로아릴렌기여도 좋다. R2는, 탄소 원자수 1∼5의 알킬렌기인 것이 바람직하다.The divalent hydrocarbon group for R 2 is, for example, an alkylene group such as a methylene group, an ethylene group, a propylene group, a butylene group, and a pentylene group, an arylene group such as a phenylene group and a naphthylene group, and a heteroarylene group such as a pyridylene group. Contribution is good too. R 2 is preferably an alkylene group having 1 to 5 carbon atoms.

일반식 (2)로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, 셀록사이드 2021P, 셀록사이드 2081(모두 가부시키가이샤 다이셀 제조) 등을 들 수 있다.As a commercial item of the epoxy resin represented by General formula (2), Celoxide 2021P, Celoxide 2081 (all are manufactured by Daicel Corporation), etc. are mentioned, for example.

Figure 112022095635028-pat00004
Figure 112022095635028-pat00004

식 (3) 중, R3, R4 및 R5는 각각 독립적으로 2가의 탄화수소기를 나타낸다.In formula (3), R 3 , R 4 and R 5 each independently represent a divalent hydrocarbon group.

R3, R4 및 R5에 있어서의 2가의 탄화수소기로서는, R2에 있어서의 2가의 탄화수소기로 예시한 것과 동일한 것을 들 수 있다.Examples of the divalent hydrocarbon group for R 3 , R 4 and R 5 include the same as those exemplified as the divalent hydrocarbon group for R 2 .

일반식 (3)으로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, Syna-Epoxy28(SYANASIA사 제조) 등을 들 수 있다.As a commercial item of the epoxy resin represented by General formula (3), Syna-Epoxy28 (made by SYANASIA) etc. are mentioned, for example.

Figure 112022095635028-pat00005
Figure 112022095635028-pat00005

식 (4) 중, R6은 수소 원자 또는 1가의 탄화수소기를 나타내고, n2는 1∼10의 정수를 나타낸다.In Formula (4), R 6 represents a hydrogen atom or a monovalent hydrocarbon group, and n2 represents an integer of 1 to 10.

R6에 있어서의 1가의 탄화수소기로서는, R1에 있어서의 1가의 탄화수소기로 예시한 것과 동일한 것을 들 수 있다.Examples of the monovalent hydrocarbon group for R 6 include the same ones as those exemplified as the monovalent hydrocarbon group for R 1 .

일반식 (4)로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, EHPE3150(가부시키가이샤 다이셀 제조) 등을 들 수 있다.As a commercial item of the epoxy resin represented by General formula (4), EHPE3150 (made by Daicel Co., Ltd.) etc. are mentioned, for example.

(A-1) 성분은, 내열성의 관점에서, 일반식 (1)로 표시되는 에폭시 수지인 것이 바람직하고, 일반식 (1a)로 표시되는 에폭시 수지인 것이 보다 바람직하다.Component (A-1) is preferably an epoxy resin represented by general formula (1) from the viewpoint of heat resistance, and more preferably an epoxy resin represented by general formula (1a).

(A-1) 성분의 함유량은, (A) 성분 전량을 기준으로 하여, 15∼100 질량%여도 좋다. (A-1) 성분의 함유량은, 40 질량% 이상, 50 질량% 이상, 또는 60 질량% 이상이어도 좋다.The content of component (A-1) may be 15 to 100% by mass based on the total amount of component (A). (A-1) The content of the component may be 40% by mass or more, 50% by mass or more, or 60% by mass or more.

(A-1) 성분의 함유량은, 접착제 조성물 전량을 기준으로 하여, 5 질량% 이상, 10 질량% 이상, 또는 20 질량% 이상이어도 좋다. (A-1) 성분의 함유량은, 접착제 조성물 전량을 기준으로 하여, 5 질량% 이상이면, 열 압착 시에 더욱 양호한 매립성을 가지면서, 블리드를 잘 억제할 수 있는 경향이 있다.The content of the component (A-1) may be 5% by mass or more, 10% by mass or more, or 20% by mass or more based on the total amount of the adhesive composition. If the content of component (A-1) is 5% by mass or more based on the total amount of the adhesive composition, there is a tendency that bleeding can be well suppressed while having better embedding during thermal compression.

(A) 성분은, (A-1) 성분에 더하여, (A-2) 지환식 고리를 갖지 않는 방향족 에폭시 수지를 더 포함하고 있어도 좋다. 여기서, 지환식 고리를 갖지 않는 방향족 에폭시 수지는, 분자 내에 방향 고리 및 에폭시기를 가지고, 또한 지환식 고리를 갖지 않는 화합물이다. (A-2) 성분으로서는, 예컨대, 비스페놀 A형 에폭시 수지, 비스페놀 F형 에폭시 수지, 비스페놀 S형 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸노볼락형 에폭시 수지, 비스페놀 A 노볼락형 에폭시 수지, 비스페놀 F 노볼락형 에폭시 수지, 스틸벤형 에폭시 수지, 트리아진 골격 함유 에폭시 수지, 플루오렌 골격 함유 에폭시 수지, 트리페놀페놀메탄형 에폭시 수지, 비페닐형 에폭시 수지, 크실렌형 에폭시 수지, 페닐아랄킬형 에폭시 수지, 비페닐아랄킬형 에폭시 수지, 나프탈렌형 에폭시 수지, 다작용 페놀류, 안트라센 등의 다환 방향족류의 디글리시딜에테르 화합물 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, (A-2) 성분은, 25℃에서 액체여도 좋다.In addition to the component (A-1), the component (A) may further contain an aromatic epoxy resin having no alicyclic ring (A-2). Here, an aromatic epoxy resin having no alicyclic ring is a compound having an aromatic ring and an epoxy group in a molecule and having no alicyclic ring. As the component (A-2), for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, Bisphenol F novolak-type epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylene-type epoxy resin, phenylaralkyl-type epoxy diglycidyl ether compounds of polycyclic aromatics such as resins, biphenylaralkyl type epoxy resins, naphthalene type epoxy resins, polyfunctional phenols, and anthracene; and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (A-2) may be a liquid at 25°C.

(A-2) 성분의 에폭시 당량은, 특별히 제한되지 않지만, 90∼600 g/eq, 100∼500 g/eq, 또는 120∼450 g/eq여도 좋다. (A-2) 성분의 에폭시 당량이 이러한 범위에 있으면, 보다 양호한 반응성 및 유동성이 얻어지는 경향이 있다.The epoxy equivalent of component (A-2) is not particularly limited, but may be 90 to 600 g/eq, 100 to 500 g/eq, or 120 to 450 g/eq. When the epoxy equivalent of component (A-2) is within this range, better reactivity and fluidity tend to be obtained.

(A-2) 성분의 함유량은, (A) 성분 전량을 기준으로 하여, 0∼85 질량%여도 좋다. (A-2) 성분의 함유량은, 60 질량% 이하, 50 질량% 이하, 또는 40 질량% 이하여도 좋다.The content of component (A-2) may be 0 to 85% by mass based on the total amount of component (A). (A-2) The content of the component may be 60% by mass or less, 50% by mass or less, or 40% by mass or less.

<(B) 성분: 경화제><Component (B): Curing Agent>

(B) 성분은, 특별히 제한 없이, 열경화성 수지의 경화제로서 일반적으로 사용되고 있는 것을 이용할 수 있다. 열경화성 수지가 에폭시 수지를 포함하는 경우, (B) 성분으로서는, 예컨대, 페놀 수지, 에스테르 화합물, 방향족 아민, 지방족 아민, 산무수물 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, 반응성 및 경시 안정성의 관점에서, (B) 성분은 페놀 수지를 포함하고 있어도 좋다.Component (B) is not particularly limited, and those commonly used as curing agents for thermosetting resins can be used. When the thermosetting resin contains an epoxy resin, examples of the component (B) include phenol resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity and stability over time, the component (B) may contain a phenol resin.

페놀 수지는, 분자 내에 페놀성 수산기를 갖는 것이면 특별히 제한 없이 이용할 수 있다. 페놀 수지로서는, 예컨대, 페놀, 크레졸, 레조르신, 카테콜, 비스페놀 A, 비스페놀 F, 페닐페놀, 아미노페놀 등의 페놀류 및/또는 α-나프톨, β-나프톨, 디히드록시나프탈렌 등의 나프톨류와 포름알데히드 등의 알데히드기를 갖는 화합물을 산성 촉매 하에서 축합 또는 공축합시켜 얻어지는 노볼락형 페놀 수지, 알릴화비스페놀 A, 알릴화비스페놀 F, 알릴화나프탈렌디올, 페놀노볼락, 페놀 등의 페놀류 및/또는 나프톨류와 디메톡시파라크실렌 또는 비스(메톡시메틸)비페닐로부터 합성되는 페놀아랄킬 수지, 나프톨아랄킬 수지, 비페닐아랄킬형 페놀 수지, 페닐 아랄킬형 페놀 수지 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, 내열성의 관점에서, 페놀 수지는, 85℃, 85% RH의 항온 항습조에 48시간의 조건에 있어서, 흡수율이 2 질량% 이하이며, 또한 열 중량 분석계(TGA)로 측정한 350℃에서의 가열 질량 감소율(승온 속도: 5℃/min, 분위기: 질소)이 5 질량% 미만인 것이 바람직하다.A phenolic resin can be used without particular limitation as long as it has a phenolic hydroxyl group in its molecule. Examples of the phenolic resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene. Novolac-type phenolic resin obtained by condensation or co-condensation of a compound having an aldehyde group such as formaldehyde under an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenols such as phenol and/or phenol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, naphthol aralkyl resins, biphenyl aralkyl type phenol resins, phenyl aralkyl type phenol resins, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of heat resistance, the phenol resin has a water absorption of 2% by mass or less under the conditions of 85 ° C. and 85% RH constant temperature and humidity chamber for 48 hours, and at 350 ° C. as measured by a thermogravimetric analyzer (TGA) It is preferable that the heating mass reduction rate (heating rate: 5°C/min, atmosphere: nitrogen) is less than 5% by mass.

페놀 수지의 시판품으로서는, 예컨대, 페놀라이트 KA 시리즈, TD 시리즈(DIC 가부시키가이샤 제조), 미렉스 XLC 시리즈, XL 시리즈(미츠이가가쿠 가부시키가이샤 제조), HE 시리즈(에어·워터 가부시키가이샤 제조) 등을 들 수 있다.Commercially available products of phenol resin include, for example, Phenolite KA series, TD series (manufactured by DIC Corporation), Mirex XLC series, XL series (manufactured by Mitsui Chemicals Co., Ltd.), HE series (manufactured by Air Water Co., Ltd.) ) and the like.

페놀 수지의 수산기 당량은, 특별히 제한되지 않지만, 80∼400 g/eq, 90∼350 g/eq, 또는 100∼300 g/eq여도 좋다. 페놀 수지의 수산기 당량이 이러한 범위에 있으면, 더욱 양호한 반응성 및 유동성이 얻어지는 경향이 있다.The hydroxyl equivalent of the phenol resin is not particularly limited, but may be 80 to 400 g/eq, 90 to 350 g/eq, or 100 to 300 g/eq. When the hydroxyl equivalent of the phenol resin is within this range, better reactivity and fluidity tend to be obtained.

(A) 성분이 에폭시 수지이고, (B) 성분이 페놀 수지인 경우의 에폭시 수지의 에폭시 당량과 페놀 수지의 수산기 당량의 비(에폭시 수지의 에폭시 당량/페놀 수지의 수산기 당량)는, 경화성의 관점에서, 0.30/0.70∼0.70/0.30, 0.35/0.65∼0.65/0.35, 0.40/0.60∼0.60/0.40, 또는 0.45/0.55∼0.55/0.45여도 좋다. 상기 당량비가 0.30/0.70 이상이면, 더욱 충분한 경화성이 얻어지는 경향이 있다. 상기 당량비가 0.70/0.30 이하이면, 점도가 지나치게 높아지는 것을 막을 수 있어, 더욱 충분한 유동성을 얻을 수 있다.The ratio of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin (epoxy equivalent of the epoxy resin / hydroxyl equivalent of the phenol resin) when the component (A) is an epoxy resin and the component (B) is a phenol resin is a curable viewpoint 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45. When the above equivalence ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalence ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.

(A) 성분 및 (B) 성분의 합계의 함유량은, 접착제 조성물 전량을 기준으로 하여, 30∼70 질량%여도 좋다. (A) 성분 및 (B) 성분의 합계의 함유량은, 33 질량% 이상, 36 질량% 이상, 또는 40 질량% 이상이어도 좋고, 65 질량% 이하, 60 질량% 이하, 또는 55 질량% 이하여도 좋다. (A) 성분 및 (B) 성분의 합계의 함유량이, 접착제 조성물 전량을 기준으로 하여, 30 질량% 이상이면, 접착성이 향상하는 경향이 있다. (A) 성분 및 (B) 성분의 합계의 함유량이, 접착제 조성물 전량을 기준으로 하여, 70 질량% 이하이면, 점도가 지나치게 낮아지는 것을 막을 수 있어, 블리드를 더욱 억제할 수 있는 경향이 있다.The total content of component (A) and component (B) may be 30 to 70% by mass based on the total amount of the adhesive composition. The content of the total of component (A) and component (B) may be 33 mass% or more, 36 mass% or more, or 40 mass% or more, and may be 65 mass% or less, 60 mass% or less, or 55 mass% or less. . When the content of the total of component (A) and component (B) is 30% by mass or more based on the total amount of the adhesive composition, the adhesiveness tends to improve. If the content of the total of component (A) and component (B) is 70% by mass or less based on the total amount of the adhesive composition, the viscosity can be prevented from being too low, and bleed can be further suppressed.

<(C) 성분: 엘라스토머><Component (C): Elastomer>

본 실시형태에 따른 접착제 조성물은, (C) 엘라스토머를 함유한다. (C) 성분은, 엘라스토머를 구성하는 중합체의 유리 전이 온도(Tg)가 50℃ 이하인 것이 바람직하다.The adhesive composition according to the present embodiment contains (C) an elastomer. (C) It is preferable that the glass transition temperature (Tg) of the polymer which comprises a component is 50 degrees C or less.

(C) 성분으로서는, 예컨대, 아크릴 수지, 폴리에스테르 수지, 폴리아미드 수지, 폴리이미드 수지, 실리콘 수지, 부타디엔 수지, 아크릴로니트릴 수지 및 이들의 변성체 등을 들 수 있다.(C) Component includes, for example, acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins and modified products thereof.

(C) 성분은, 용제에의 용해성, 유동성의 관점에서, 아크릴 수지를 포함하고 있어도 좋다. 여기서, 아크릴 수지란, (메트)아크릴산에스테르에서 유래하는 구성 단위를 포함하는 폴리머를 의미한다. 아크릴 수지는, 구성 단위로서, 에폭시기, 알코올성 또는 페놀성 수산기, 카르복시기 등의 가교성 작용기를 갖는 (메트)아크릴산에스테르에서 유래하는 구성 단위를 포함하는 폴리머인 것이 바람직하다. 또한, 아크릴 수지는, (메트)아크릴산에스테르와 아크릴니트릴의 공중합체 등의 아크릴 고무여도 좋다.(C) Component may contain an acrylic resin from the viewpoint of solubility in a solvent and fluidity. Here, an acrylic resin means a polymer containing a structural unit derived from (meth)acrylic acid ester. The acrylic resin is preferably a polymer containing a structural unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group as a structural unit. Moreover, acrylic rubber, such as a copolymer of (meth)acrylic acid ester and acrylonitrile, may be sufficient as an acrylic resin.

아크릴 수지의 유리 전이 온도(Tg)는, -50∼50℃ 또는 -30∼30℃여도 좋다. 아크릴 수지의 Tg가 -50℃ 이상이면, 접착제 조성물의 유연성이 지나치게 높아지는 것을 막을 수 있는 경향이 있다. 이에 의해, 웨이퍼 다이싱 시에 필름형 접착제를 절단하기 쉬워져, 버어의 발생을 막는 것이 가능해진다. 아크릴 수지의 Tg가 50℃ 이하이면, 접착제 조성물의 유연성의 저하를 억제할 수 있는 경향이 있다. 이에 의해, 필름형 접착제를 웨이퍼에 접착할 때에, 보이드를 충분히 매립하기 쉬워지는 경향이 있다. 또한, 웨이퍼의 밀착성의 저하에 의한 다이싱 시의 치핑을 막는 것이 가능해진다. 여기서, 유리 전이 온도(Tg)는, DSC(열 시차 주사 열량계)(예컨대, 가부시키가이샤 리가쿠 제조 「Thermo Plus 2」)를 이용하여 측정한 값을 의미한다.The glass transition temperature (Tg) of the acrylic resin may be -50 to 50°C or -30 to 30°C. When the Tg of the acrylic resin is -50°C or higher, excessive increase in flexibility of the adhesive composition tends to be prevented. Thereby, it becomes easy to cut|disconnect the film adhesive at the time of wafer dicing, and it becomes possible to prevent generation|occurrence|production of a burr. When the Tg of the acrylic resin is 50°C or less, there is a tendency that the decrease in flexibility of the adhesive composition can be suppressed. This tends to make it easy to sufficiently fill the void when adhering the film adhesive to the wafer. In addition, it becomes possible to prevent chipping during dicing due to a decrease in the adhesiveness of the wafer. Here, glass transition temperature (Tg) means the value measured using DSC (thermal differential scanning calorimeter) (For example, "Thermo Plus 2" by Rigaku Co., Ltd.).

아크릴 수지의 중량 평균 분자량(Mw)은, 10만∼300만 또는 50만∼200만이어도 좋다. 아크릴 수지의 Mw가 이러한 범위에 있으면, 필름 형성성, 필름형에 있어서의 강도, 가요성, 태크성 등을 적절하게 제어할 수 있으며, 리플로우성이 우수하여, 매립성을 향상시킬 수 있다. 여기서, Mw는, 겔 퍼미에이션 크로마토그래피(GPC)로 측정하고, 표준 폴리스티렌에 의한 검량선을 이용하여 환산한 값을 의미한다.The weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3,000,000 or 500,000 to 2,000,000. When the Mw of the acrylic resin is within this range, the film formability, strength in the film form, flexibility, tackiness, etc. can be appropriately controlled, and the reflowability is excellent, and the embedding property can be improved. Here, Mw means the value measured by gel permeation chromatography (GPC) and converted using the calibration curve by standard polystyrene.

아크릴 수지의 시판품으로서는, 예컨대, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB(모두 나가세켐텍스 가부시키가이샤 제조)를 들 수 있다.Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, and HTR-860P-3CSP-3DB (all manufactured by Nagase Chemtex Co., Ltd.) ) can be heard.

(C) 성분의 함유량은, (A) 성분 및 (B) 성분의 총량 100 질량부에 대하여, 20∼200 질량부 또는 30∼100 질량부여도 좋다. (C) 성분의 함유량이 (A) 성분 및 (B) 성분의 총량 100 질량부에 대하여, 20 질량부 이상이면, 필름형 접착제의 취급성(예컨대 절곡성 등)이 더욱 양호해지는 경향이 있다. (C) 성분의 함유량이 (A) 성분 및 (B) 성분의 총량 100 질량부에 대하여, 200 질량부 이하이면, 접착제 조성물의 유연성이 지나치게 높아지는 것을 더욱 막을 수 있는 경향이 있다. 이에 의해, 웨이퍼 다이싱 시에 필름형 접착제를 절단하기 쉬워져, 버어의 발생을 막는 것이 한층 더 가능해지는 경향이 있다.The content of component (C) may be 20 to 200 parts by mass or 30 to 100 parts by mass based on 100 parts by mass of the total amount of component (A) and component (B). When the content of component (C) is 20 parts by mass or more relative to 100 parts by mass of the total amount of component (A) and component (B), the film adhesive tends to have better handleability (eg, bendability). If the content of component (C) is 200 parts by mass or less based on 100 parts by mass of the total amount of component (A) and component (B), excessive increase in flexibility of the adhesive composition tends to be further prevented. This tends to make it easier to cut the film adhesive at the time of wafer dicing, and to further prevent the occurrence of burrs.

<(D) 성분: 무기 필러><Component (D): Inorganic filler>

본 실시형태에 따른 접착제 조성물은, (D) 무기 필러를 더 함유하고 있어도 좋다. 무기 필러로서는, 예컨대, 수산화알루미늄, 수산화마그네슘, 탄산칼슘, 탄산마그네슘, 규산칼슘, 규산마그네슘, 산화칼슘, 산화마그네슘, 산화알루미늄, 질화알루미늄, 붕산알루미늄 위스커, 질화붕소, 결정성 실리카, 비정성 실리카 등을 들 수 있다. 이들은 1종을 단독으로 이용하여도 좋고, 2종 이상을 조합하여 이용하여도 좋다. 얻어지는 필름형 접착제의 열 전도성이 더욱 향상하는 관점에서, 무기 필러는, 산화알루미늄, 질화알루미늄, 질화붕소, 결정성 실리카 또는 비정성 실리카를 포함하고 있어도 좋다. 또한, 접착제 조성물의 용융 점도를 조정하는 관점 및 접착제 조성물에 틱소트로픽성을 부여하는 관점에서, 무기 필러는, 수산화알루미늄, 수산화마그네슘, 탄산칼슘, 탄산마그네슘, 규산칼슘, 규산마그네슘, 산화칼슘, 산화마그네슘, 산화알루미늄, 결정성 실리카 또는 비정성 실리카를 포함하고 있어도 좋다.The adhesive composition according to the present embodiment may further contain (D) an inorganic filler. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, and amorphous silica. etc. can be mentioned. These may be used individually by 1 type, and may be used in combination of 2 or more types. From the viewpoint of further improving the thermal conductivity of the obtained film adhesive, the inorganic filler may contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica or amorphous silica. In addition, from the viewpoint of adjusting the melt viscosity of the adhesive composition and imparting thixotropic properties to the adhesive composition, the inorganic filler is aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, oxide Magnesium, aluminum oxide, crystalline silica, or amorphous silica may be included.

(D) 성분의 평균 입경은, 접착성이 더욱 향상하는 관점에서, 0.005∼0.5 ㎛ 또는 0.05∼0.3 ㎛여도 좋다. 여기서, 평균 입경은, BET 비표면적으로부터 환산함으로써 구해지는 값을 의미한다.The average particle diameter of component (D) may be 0.005 to 0.5 µm or 0.05 to 0.3 µm from the viewpoint of further improving adhesiveness. Here, the average particle diameter means a value obtained by converting from the BET specific surface area.

(D) 성분은, 그 표면과 용제, 다른 성분 등과의 상용성, 접착 강도의 관점에서 표면 처리제에 의해 표면 처리되어 있어도 좋다. 표면 처리제로서는, 예컨대, 실란 커플링제 등을 들 수 있다. 실란 커플링제의 작용기로서는, 예컨대, 비닐기, (메트)아크릴로일기, 에폭시기, 메르캅토기, 아미노기, 디아미노기, 알콕시기, 에톡시기 등을 들 수 있다.Component (D) may be surface treated with a surface treatment agent from the viewpoint of compatibility between the surface and the solvent, other components, and the like, and adhesive strength. As a surface treatment agent, a silane coupling agent etc. are mentioned, for example. As a functional group of a silane coupling agent, a vinyl group, a (meth)acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, an ethoxy group etc. are mentioned, for example.

(D) 성분의 함유량은, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 10∼90 질량부 또는 10∼50 질량부여도 좋다. (D) 성분의 함유량이, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 10 질량부 이상이면, 경화 전의 접착층의 다이싱성이 향상하여, 경화 후의 접착층의 접착력이 향상하는 경향이 있다. (D) 성분의 함유량이, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 90 질량부 이하이면, 유동성의 저하를 억제할 수 있어, 경화 후의 필름형 접착제의 탄성률이 지나치게 높아지는 것을 막는 것이 가능해진다.The content of component (D) may be 10 to 90 parts by mass or 10 to 50 parts by mass based on 100 parts by mass of the total amount of component (A), component (B) and component (C). If the content of component (D) is 10 parts by mass or more based on 100 parts by mass of the total amount of component (A), component (B) and component (C), the dicing property of the adhesive layer before curing is improved, and the adhesive layer after curing is improved. Adhesion tends to improve. If the content of component (D) is 90 parts by mass or less with respect to 100 parts by mass of the total amount of component (A), component (B), and component (C), the decrease in fluidity can be suppressed, and the film adhesive after curing can be suppressed. It becomes possible to prevent the modulus of elasticity from becoming too high.

<(E) 성분: 경화 촉진제><Component (E): Curing Accelerator>

본 실시형태에 따른 접착제 조성물은, (E) 경화 촉진제를 함유하고 있어도 좋다. 경화 촉진제는, 특별히 한정되지 않고, 일반적으로 사용되는 것을 이용할 수 있다. (E) 성분으로서는, 예컨대, 이미다졸류 및 그 유도체, 유기 인계 화합물, 제2급 아민류, 제3급 아민류, 제4급 암모늄염 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, 반응성의 관점에서 (E) 성분은 이미다졸류 및 그 유도체여도 좋다.The adhesive composition according to the present embodiment may contain (E) a hardening accelerator. The curing accelerator is not particularly limited, and those generally used can be used. Examples of the component (E) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. You may use these individually by 1 type or in combination of 2 or more types. Among these, imidazoles and derivatives thereof may be sufficient as (E) component from a reactive viewpoint.

이미다졸류로서는, 예컨대, 2-메틸이미다졸, 1-벤질-2-메틸이미다졸, 1-시아노에틸-2-페닐이미다졸, 1-시아노에틸-2-메틸이미다졸 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다.Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. etc. can be mentioned. You may use these individually by 1 type or in combination of 2 or more types.

(E) 성분의 함유량은, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 0.04∼3 질량부 또는 0.04∼0.2 질량부여도 좋다. (E) 성분의 함유량이 이러한 범위에 있으면, 경화성과 신뢰성을 양립할 수 있는 경향이 있다.The content of component (E) may be 0.04 to 3 parts by mass or 0.04 to 0.2 parts by mass with respect to 100 parts by mass of the total amount of component (A), component (B) and component (C). When the content of component (E) is within this range, there is a tendency for both curability and reliability to be compatible.

<그 외의 성분><Other ingredients>

본 실시형태에 따른 접착제 조성물은, 그 외의 성분으로서, 항산화제, 실란 커플링제, 레올로지 컨트롤제 등을 더 함유하고 있어도 좋다. 이들 성분의 함유량은, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 0.02∼3 질량부여도 좋다.The adhesive composition according to the present embodiment may further contain an antioxidant, a silane coupling agent, a rheology control agent, and the like as other components. The content of these components may be 0.02 to 3 parts by mass with respect to 100 parts by mass of the total amount of component (A), component (B) and component (C).

본 실시형태에 따른 접착제 조성물은, 용제로 희석된 접착제 바니시로서 이용하여도 좋다. 용제는, (D) 성분 이외의 성분을 용해할 수 있는 것이면 특별히 제한되지 않는다. 용제로서는, 예컨대, 톨루엔, 크실렌, 메시틸렌, 쿠멘, p-시멘 등의 방향족 탄화수소; 헥산, 헵탄 등의 지방족 탄화수소; 메틸시클로헥산 등의 환상 알칸; 테트라히드로푸란, 1,4-디옥산 등의 환상 에테르; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 시클로헥사논, 4-히드록시-4-메틸-2-펜타논 등의 케톤; 아세트산메틸, 아세트산에틸, 아세트산부틸, 젖산메틸, 젖산에틸, γ-부티로락톤 등의 에스테르; 에틸렌카보네이트, 프로필렌카보네이트 등의 탄산에스테르; N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈 등의 아미드 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중, 용제는, 용해성 및 비점의 관점에서, 톨루엔, 크실렌, 메틸에틸케톤, 메틸이소부틸케톤, 또는 시클로헥산이어도 좋다.The adhesive composition according to the present embodiment may be used as an adhesive varnish diluted with a solvent. The solvent is not particularly limited as long as it can dissolve components other than component (D). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonic acid esters such as ethylene carbonate and propylene carbonate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexane may be sufficient as a solvent from a viewpoint of solubility and a boiling point.

접착제 바니시 중의 고형 성분 농도는, 접착제 바니시의 전질량을 기준으로 하여, 10∼80 질량%여도 좋다.The solid component concentration in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.

접착제 바니시는, (A) 성분, (B) 성분, (C) 성분 및 용제와, 필요에 따라, (D) 성분, (E) 성분 및 그 외의 성분을 혼합, 혼련함으로써 조제할 수 있다. 혼합 및 혼련은, 통상의 교반기, 뢰궤기, 3본롤, 볼밀, 비드밀 등의 분산기를 적절하게, 조합하여 행할 수 있다. (D) 성분을 함유하는 경우, (D) 성분과 저분자량 성분을 미리 혼합한 후, 고분자량 성분을 배합함으로써, 혼합하는 시간을 단축할 수 있다. 또한, 접착제 바니시를 조제한 후, 진공 탈기 등에 의해 바니시 중의 기포를 제거하여도 좋다.An adhesive varnish can be prepared by mixing and kneading component (A), component (B), component (C), solvent, and, if necessary, component (D), component (E), and other components. Mixing and kneading can be performed by appropriately combining a dispersing machine such as a normal stirrer, miner, 3-roll, ball mill, or bead mill. (D) In the case of containing the component, mixing time can be shortened by blending the high molecular weight component after previously mixing the (D) component and the low molecular weight component. Alternatively, after preparing the adhesive varnish, air bubbles in the varnish may be removed by vacuum degassing or the like.

[필름형 접착제][Film type adhesive]

도 1은 일 실시형태에 따른 필름형 접착제를 나타내는 모식 단면도이다. 필름형 접착제(10)는, 전술한 접착제 조성물을 필름형으로 형성하여 이루어지는 것이다. 필름형 접착제(10)는, 반경화(B 스테이지) 상태여도 좋다. 이러한 필름형 접착제(10)는, 접착제 조성물을 지지 필름에 도포함으로써 형성할 수 있다. 접착제 바니시를 이용하는 경우는, 접착제 바니시를 지지 필름에 도포하고, 용제를 가열 건조하여 제거함으로써 필름형 접착제(10)를 형성할 수 있다.1 is a schematic cross-sectional view showing a film adhesive according to an embodiment. The film adhesive 10 is formed by forming the adhesive composition described above into a film shape. The film adhesive 10 may be in a semi-cured (B stage) state. Such a film adhesive 10 can be formed by applying an adhesive composition to a support film. When using an adhesive varnish, the film adhesive 10 can be formed by apply|coating an adhesive varnish to a support film, and heat-drying and removing a solvent.

지지 필름으로서는, 특별히 제한은 없고, 예컨대, 폴리테트라플루오로에틸렌, 폴리에틸렌, 폴리프로필렌, 폴리메틸펜텐 , 폴리에틸렌테레프탈레이트, 폴리이미드 등의 필름을 들 수 있다. 지지 필름의 두께는, 예컨대, 60∼200 ㎛ 또는 70∼170 ㎛여도 좋다.The support film is not particularly limited, and examples thereof include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide. The thickness of the supporting film may be, for example, 60 to 200 μm or 70 to 170 μm.

접착제 바니시를 지지 필름에 도포하는 방법으로서는, 공지의 방법을 이용할 수 있고, 예컨대, 나이프 코트법, 롤 코트법, 스프레이 코트법, 그라비아 코트법, 바 코트법, 커튼 코트법 등을 들 수 있다. 가열 건조 조건은, 사용한 용제가 충분히 휘발하는 조건이면 특별히 제한은 없지만, 예컨대, 50∼200℃에서 0.1∼90분간이어도 좋다.As a method of applying the adhesive varnish to the supporting film, a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. Heating and drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 0.1 to 90 minutes at 50 to 200°C.

필름형 접착제의 두께는, 용도에 맞추어, 적절하게 조정할 수 있다. 필름형 접착제의 두께는, 반도체 칩, 와이어, 기판의 배선 회로 등의 요철 등을 충분히 매립하는 관점에서, 20∼200 ㎛, 30∼200 ㎛, 또는 40∼150 ㎛여도 좋다.The thickness of the film adhesive can be appropriately adjusted according to the use. The thickness of the film adhesive may be 20 to 200 μm, 30 to 200 μm, or 40 to 150 μm from the viewpoint of sufficiently filling irregularities such as semiconductor chips, wires, and circuit boards.

[접착 시트][Adhesive Sheet]

도 2는 일 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다. 접착 시트(100)는, 기재(20)와 기재 상에 마련된 전술한 필름형 접착제(10)를 구비한다.2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment. The adhesive sheet 100 includes a substrate 20 and the aforementioned film adhesive 10 provided on the substrate.

기재(20)는, 특별히 제한되지 않지만, 기재 필름이어도 좋다. 기재 필름은, 전술한 지지 필름과 같은 것이어도 좋다.The substrate 20 is not particularly limited, but may be a substrate film. The base film may be the same as the support film described above.

기재(20)는, 다이싱 테이프여도 좋다. 이러한 접착 시트는, 다이싱 다이본딩 일체형 접착 시트로서 사용할 수 있다. 이 경우, 반도체 웨이퍼에의 라미네이트 공정이 1회가 되기 때문에, 작업의 효율화가 가능하다.The substrate 20 may be a dicing tape. Such an adhesive sheet can be used as a dicing die-bonding integrated adhesive sheet. In this case, since the lamination process to the semiconductor wafer becomes one time, work efficiency can be improved.

다이싱 테이프로서는, 예컨대, 폴리테트라플루오로에틸렌 필름, 폴리에틸렌테레프탈레이트 필름, 폴리에틸렌 필름, 폴리프로필렌 필름, 폴리메틸펜텐 필름, 폴리이미드 필름 등의 플라스틱 필름 등을 들 수 있다. 또한, 다이싱 테이프는, 필요에 따라, 프라이머 도포, UV 처리, 코로나 방전 처리, 연마 처리, 에칭 처리 등의 표면 처리가 행해져 있어도 좋다. 다이싱 테이프는, 점착성을 갖는 것이 바람직하다. 이러한 다이싱 테이프는, 전술한 플라스틱 필름에 점착성을 부여한 것이어도 좋고, 전술한 플라스틱 필름의 편면에 점착제층을 마련한 것이어도 좋다.As a dicing tape, plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film, etc. are mentioned, for example. In addition, the dicing tape may be subjected to surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as needed. The dicing tape preferably has adhesiveness. Such a dicing tape may be one obtained by imparting adhesiveness to the plastic film described above, or one in which an adhesive layer is provided on one side of the plastic film described above.

접착 시트(100)는, 전술한 필름형 접착제를 형성하는 방법과 마찬가지로, 접착제 조성물을 기재 필름에 도포함으로써 형성할 수 있다. 접착제 조성물을 기재(20)에 도포하는 방법은, 전술한 접착제 조성물을 지지 필름에 도포하는 방법과 동일하여도 좋다.The adhesive sheet 100 can be formed by applying an adhesive composition to a base film, similarly to the method of forming the film adhesive described above. The method of applying the adhesive composition to the substrate 20 may be the same as the method of applying the above-described adhesive composition to the supporting film.

접착 시트(100)는, 미리 제작한 필름형 접착제를 이용하여 형성하여도 좋다. 이 경우, 접착 시트(100)는, 롤 라미네이터, 진공 라미네이터 등을 이용하여 소정 조건[예컨대, 실온(20℃) 또는 가열 상태]에서 라미네이트함으로써 형성할 수 있다. 접착 시트(100)는, 연속적으로 제조를 할 수 있어, 효율이 좋기 때문에, 가열 상태에서 롤 라미네이터를 이용하여 형성하는 것이 바람직하다.The adhesive sheet 100 may be formed using a film adhesive prepared in advance. In this case, the adhesive sheet 100 can be formed by laminating under predetermined conditions (eg, room temperature (20° C.) or heated state) using a roll laminator, vacuum laminator, or the like. Since the adhesive sheet 100 can be manufactured continuously and has good efficiency, it is preferable to form using a roll laminator in a heated state.

필름형 접착제(10)의 두께는, 반도체 칩, 와이어, 기판의 배선 회로 등의 요철 등의 매립성의 관점에서, 20∼200 ㎛, 30∼200 ㎛, 또는 40∼150 ㎛여도 좋다. 필름형 접착제(10)의 두께가 20 ㎛ 이상이면, 더욱 충분한 접착력이 얻어지는 경향이 있고, 필름형 접착제(10)의 두께가 200 ㎛ 이하이면, 경제적이고, 또한 반도체 장치의 소형화의 요구에 응하는 것이 가능해진다.The thickness of the film adhesive 10 may be 20 to 200 μm, 30 to 200 μm, or 40 to 150 μm from the viewpoint of embedding properties such as irregularities such as semiconductor chips, wires, and wiring circuits on the substrate. When the thickness of the film adhesive 10 is 20 μm or more, more sufficient adhesive strength tends to be obtained, and when the thickness of the film adhesive 10 is 200 μm or less, it is economical and meets the demand for miniaturization of semiconductor devices. it becomes possible

도 3은 다른 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다. 접착 시트(110)는, 필름형 접착제(10)의 기재(20)와는 반대측의 면에 적층된 보호 필름(30)을 더 구비한다. 보호 필름(30)은, 전술한 지지 필름과 동일한 것이어도 좋다. 보호 필름의 두께는, 예컨대, 15∼200 ㎛ 또는 70∼170 ㎛여도 좋다.3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment. The adhesive sheet 110 further includes a protective film 30 laminated on a surface of the film adhesive 10 opposite to the base material 20 . The protective film 30 may be the same as the support film described above. The thickness of the protective film may be, for example, 15 to 200 μm or 70 to 170 μm.

[반도체 장치][Semiconductor device]

도 4는 일 실시형태에 따른 반도체 장치를 나타내는 모식 단면도이다. 반도체 장치(200)는, 기판(14)에, 제1 와이어(88)를 통해 1단째의 제1 반도체 소자(Wa)가 와이어 본딩 접속되며, 제1 반도체 소자(Wa) 상에, 제2 반도체 소자(Waa)가 필름형 접착제(10)를 통해 압착됨으로써, 제1 와이어(88)의 적어도 일부가 필름형 접착제(10)에 매립되어 이루어지는 반도체 장치이다. 반도체 장치는, 제1 와이어(88)의 적어도 일부가 매립되어 이루어지는 와이어 매립형의 반도체 장치여도, 제1 와이어(88) 및 제1 반도체 소자(Wa)가 매립되어 이루어지는 반도체 장치여도 좋다. 또한, 반도체 장치(200)에서는, 기판(14)과 제2 반도체 소자(Waa)가 또한 제2 와이어(98)를 통해 전기적으로 접속되며, 제2 반도체 소자(Waa)가 밀봉재(42)에 의해 밀봉되어 있다.4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. In the semiconductor device 200, a first stage first semiconductor element Wa is connected to a substrate 14 through a first wire 88 by wire bonding, and a second semiconductor element Wa is connected to the first semiconductor element Wa. It is a semiconductor device in which at least a part of the first wire 88 is embedded in the film adhesive 10 when the element Waa is crimped through the film adhesive 10 . The semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire 88 is embedded, or a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded. Further, in the semiconductor device 200, the substrate 14 and the second semiconductor element Waa are also electrically connected through a second wire 98, and the second semiconductor element Waa is formed by the sealing material 42. It is sealed.

제1 반도체 소자(Wa)의 두께는, 10∼170 ㎛여도 좋고, 제2 반도체 소자(Waa)의 두께는, 20∼400 ㎛여도 좋다. 필름형 접착제(10) 내부에 매립되어 있는 제1 반도체 소자(Wa)는, 반도체 장치(200)를 구동하기 위한 컨트롤러 칩이다.The thickness of the first semiconductor element Wa may be 10 to 170 μm, and the thickness of the second semiconductor element Waa may be 20 to 400 μm. The first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200 .

기판(14)은, 표면에 회로 패턴(84, 94)이 각각 2부위씩 형성된 유기 기판(90)을 포함한다. 제1 반도체 소자(Wa)는, 회로 패턴(94) 상에 접착제(41)를 통해 압착되어 있다. 제2 반도체 소자(Waa)는, 제1 반도체 소자(Wa)가 압착되어 있지 않은 회로 패턴(94), 제1 반도체 소자(Wa) 및 회로 패턴(84)의 일부가 덮이도록 필름형 접착제(10)를 통해 기판(14)에 압착되어 있다. 기판(14) 상의 회로 패턴(84, 94)에 기인하는 요철의 단차에는, 필름형 접착제(10)가 매립되어 있다. 그리고, 수지제의 밀봉재(42)에 의해, 제2 반도체 소자(Waa), 회로 패턴(84) 및 제2 와이어(98)가 밀봉되어 있다.The substrate 14 includes an organic substrate 90 on the surface of which circuit patterns 84 and 94 are formed at two portions, respectively. The first semiconductor element Wa is pressed onto the circuit pattern 94 through the adhesive 41 . The second semiconductor element (Waa) is a film adhesive 10 such that the first semiconductor element (Wa) is not compressed, the circuit pattern 94, the first semiconductor element (Wa) and a part of the circuit pattern 84 are covered. ) is pressed to the substrate 14 through. The film adhesive 10 is embedded in the irregularities caused by the circuit patterns 84 and 94 on the substrate 14 . Then, the second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed by the sealing material 42 made of resin.

[반도체 장치의 제조 방법][Method of manufacturing semiconductor device]

본 실시형태에 따른 반도체 장치의 제조 방법은, 기판 상에 제1 와이어를 통해 제1 반도체 소자를 전기적으로 접속하는 제1 와이어 본딩 공정과, 제2 반도체 소자의 편면에, 전술한 필름형 접착제를 첩부하는 라미네이트 공정과, 필름형 접착제가 첩부된 제2 반도체 소자를, 필름형 접착제를 통해 압착함으로써, 제1 와이어의 적어도 일부를 필름형 접착제에 매립하는 다이본드 공정을 포함한다.The method for manufacturing a semiconductor device according to the present embodiment includes a first wire bonding step of electrically connecting a first semiconductor element on a substrate through a first wire, and applying the above-described film adhesive to one side of a second semiconductor element. It includes a lamination process to attach and a die-bonding process of embedding at least a part of the first wire in the film adhesive by crimping the second semiconductor element to which the film adhesive is attached through the film adhesive.

도 5∼9는 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다. 본 실시형태에 따른 반도체 장치(200)는, 제1 와이어(88) 및 제1 반도체 소자(Wa)가 매립되어 이루어지는 반도체 장치이며, 이하의 순서에 따라 제조된다. 먼저, 도 5에 나타내는 바와 같이, 기판(14) 상의 회로 패턴(94) 상에, 접착제(41)를 갖는 제1 반도체 소자(Wa)를 압착하고, 제1 와이어(88)를 통해 기판(14) 상의 회로 패턴(84)과 제1 반도체 소자(Wa)를 전기적으로 본딩 접속한다(제1 와이어 본딩 공정).5 to 9 are schematic cross-sectional views showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment. The semiconductor device 200 according to the present embodiment is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are buried, and is manufactured according to the following procedure. First, as shown in FIG. 5 , a first semiconductor element Wa having an adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the substrate 14 is passed through the first wire 88. ) and the first semiconductor element Wa are electrically bonded to each other (first wire bonding process).

다음에, 반도체 웨이퍼(예컨대, 두께 100 ㎛, 사이즈: 8인치)의 편면에, 접착 시트(100)를 라미네이트하고, 기재(20)를 박리함으로써, 반도체 웨이퍼의 편면에 필름형 접착제(10)(예컨대, 두께 110 ㎛)를 접착한다. 그리고, 필름형 접착제(10)에 다이싱 테이프를 접합한 후, 소정의 크기(예컨대, 한 변이 7.5 ㎜인 사각형)로 다이싱함으로써, 도 6에 나타내는 바와 같이, 필름형 접착제(10)가 첩부된 제2 반도체 소자(Waa)를 얻는다(라미네이트 공정).Next, by laminating the adhesive sheet 100 on one side of a semiconductor wafer (e.g., thickness 100 μm, size: 8 inches) and peeling off the base material 20, the film adhesive 10 is applied to one side of the semiconductor wafer ( For example, a thickness of 110 μm) is adhered. And, after bonding the dicing tape to the film adhesive 10, by dicing into a predetermined size (for example, a square with a side of 7.5 mm), as shown in FIG. 6, the film adhesive 10 is attached A second semiconductor element Waa is obtained (lamination process).

라미네이트 공정의 온도 조건은, 50∼100℃ 또는 60∼80℃여도 좋다. 라미네이트 공정의 온도가 50℃ 이상이면, 반도체 웨이퍼와 양호한 밀착성을 얻을 수 있다. 라미네이트 공정의 온도가 100℃ 이하이면, 라미네이트 공정 중에 필름형 접착제(10)가 과도하게 유동하는 것이 억제되기 때문에, 두께의 변화 등을 야기하는 것을 방지할 수 있다.50-100 degreeC or 60-80 degreeC may be sufficient as the temperature condition of a lamination process. If the temperature of the lamination process is 50°C or higher, a semiconductor wafer and good adhesion can be obtained. Since it is suppressed that the film adhesive 10 flows excessively during a lamination process as the temperature of a lamination process is 100 degreeC or less, it can prevent that a change of thickness etc. are caused.

다이싱 방법으로서는, 예컨대, 회전날을 이용하는 블레이드 다이싱, 레이저에 의해 필름형 접착제 또는 웨이퍼와 필름형 접착제의 양방을 절단하는 방법 등을 들 수 있다.Examples of the dicing method include blade dicing using a rotary blade and a method of cutting both the film adhesive or the wafer and the film adhesive with a laser.

그리고, 필름형 접착제(10)가 첩부된 제2 반도체 소자(Waa)를, 제1 반도체 소자(Wa)가 제1 와이어(88)를 통해 본딩 접속된 기판(14)에 압착한다. 구체적으로는, 도 7에 나타내는 바와 같이, 필름형 접착제(10)가 첩부된 제2 반도체 소자(Waa)를, 필름형 접착제(10)에 의해 제1 와이어(88) 및 제1 반도체 소자(Wa)가 덮이도록 배치하고, 계속해서, 도 8에 나타내는 바와 같이, 제2 반도체 소자(Waa)를 기판(14)에 압착시킴으로써 기판(14)에 제2 반도체 소자(Waa)를 고정한다(다이본드 공정). 다이본드 공정은, 필름형 접착제(10)를 80∼180℃, 0.01∼0.50 ㎫의 조건에서 0.5∼3.0초간 압착하는 것이 바람직하다. 다이본드 공정 후, 필름형 접착제(10)를 60∼175℃, 0.3∼0.7 ㎫의 조건에서, 5분간 이상 가압 및 가열한다.And the 2nd semiconductor element Waa to which the film adhesive 10 was stuck is crimped|bonded to the board|substrate 14 to which the 1st semiconductor element Wa was bonded via the 1st wire 88. As specifically, as shown in FIG. 7, the 2nd semiconductor element Waa to which the film adhesive 10 was stuck, the 1st wire 88 and the 1st semiconductor element Wa by the film adhesive 10 ), and then, as shown in FIG. 8 , the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa to the substrate 14 (die bond). process). In the die-bonding process, it is preferable to crimp the film adhesive 10 under conditions of 80 to 180°C and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. After the die-bonding process, the film adhesive 10 is pressurized and heated for 5 minutes or longer on conditions of 60 to 175°C and 0.3 to 0.7 MPa.

계속해서, 도 9에 나타내는 바와 같이, 기판(14)과 제2 반도체 소자(Waa)를 제2 와이어(98)를 통해 전기적으로 접속한 후(제2 와이어 본딩 공정), 회로 패턴(84), 제2 와이어(98) 및 제2 반도체 소자(Waa)를 밀봉재(42)로 밀봉한다. 이러한 공정을 거침으로써 반도체 장치(200)를 제조할 수 있다.Subsequently, as shown in FIG. 9 , after electrically connecting the substrate 14 and the second semiconductor element Waa via the second wire 98 (second wire bonding process), the circuit pattern 84, The second wire 98 and the second semiconductor element Waa are sealed with a sealing material 42 . Through these processes, the semiconductor device 200 can be manufactured.

다른 실시형태로서, 반도체 장치는, 제1 와이어(88)의 적어도 일부가 매립되어 이루어지는 와이어 매립형의 반도체 장치여도 좋다.As another embodiment, the semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire 88 is buried.

실시예Example

이하, 본 발명에 대해서 실시예를 들어 보다 구체적으로 설명한다. 단, 본 발명은 이들 실시예에 한정되는 것이 아니다.Hereinafter, examples of the present invention will be described in more detail. However, the present invention is not limited to these examples.

(실시예 1∼8 및 비교예 1∼4)(Examples 1 to 8 and Comparative Examples 1 to 4)

<접착 시트의 제작><Production of adhesive sheet>

이하에 나타내는 각 성분을 표 1 및 표 2에 나타낸 배합 비율(질량부)로 혼합하고, 용매로서 시클로헥사논을 이용하여 고형분 40 질량%의 접착제 조성물의 바니시를 조제하였다. 다음에, 얻어진 바니시를 100메쉬의 필터로 여과하여, 진공 탈포하였다. 진공 탈포 후의 바니시를, 기재 필름으로서, 두께 38 ㎛의 이형 처리를 실시한 폴리에틸렌테레프탈레이트(PET) 필름 상에 도포하였다. 도포한 바니시를, 90℃에서 5분간, 계속해서 140℃에서 5분간의 2단계로 가열 건조하였다. 이와 같이 하여, 기재 필름 상에, 반경화(B 스테이지) 상태에 있는 두께 110 ㎛의 필름형 접착제를 구비하는 접착 시트를 얻었다.Each component shown below was mixed in the compounding ratio (parts by mass) shown in Table 1 and Table 2, and a varnish of an adhesive composition having a solid content of 40% by mass was prepared using cyclohexanone as a solvent. Next, the obtained varnish was filtered through a 100 mesh filter and vacuum defoamed. The varnish after vacuum defoaming was applied as a base film on a polyethylene terephthalate (PET) film having a thickness of 38 μm and subjected to release treatment. The applied varnish was heated and dried in two steps: at 90°C for 5 minutes and subsequently at 140°C for 5 minutes. In this way, an adhesive sheet provided with a film adhesive having a thickness of 110 μm in a semi-cured (B stage) state was obtained on the base film.

또한, 표 1 및 표 2 중 각 성분은 이하와 같다.In addition, each component in Table 1 and Table 2 is as follows.

(A) 열경화성 수지(A) thermosetting resin

(A-1) 지환식 고리를 갖는 에폭시 수지(A-1) an epoxy resin having an alicyclic ring

A-1-1: 일반식 (1a)로 표시되는 에폭시 수지(디시클로펜타디엔 구조를 갖는 에폭시 수지), DIC 가부시키가이샤 제조, 상품명: HP-7200L, 에폭시 당량: 250∼280 g/eqA-1-1: Epoxy resin represented by general formula (1a) (epoxy resin having a dicyclopentadiene structure), manufactured by DIC Corporation, trade name: HP-7200L, epoxy equivalent: 250 to 280 g/eq

A-1-2: 일반식 (1a)로 표시되는 에폭시 수지(디시클로펜타디엔 구조를 갖는 에폭시 수지), 니혼가야쿠 가부시키가이샤 제조, 상품명: XD-1000, 에폭시 당량: 254 g/eqA-1-2: Epoxy resin represented by the general formula (1a) (epoxy resin having a dicyclopentadiene structure), manufactured by Nihon Kayaku Co., Ltd., trade name: XD-1000, epoxy equivalent: 254 g/eq

A-1-3: 일반식 (2)로 표시되는 에폭시 수지(25℃에서 액체), 가부시키가이샤 다이셀 제조, 상품명: 셀록사이드 2021P, 에폭시 당량: 128∼145 g/eqA-1-3: Epoxy resin represented by general formula (2) (liquid at 25°C), manufactured by Daicel Co., Ltd., trade name: Celloxide 2021P, epoxy equivalent: 128 to 145 g/eq

A-1-4: 일반식 (4)로 표시되는 에폭시 수지, 가부시키가이샤 다이셀 제조, 상품명: EHPE3150, 에폭시 당량: 170∼190 g/eqA-1-4: Epoxy resin represented by general formula (4), manufactured by Daicel Co., Ltd., trade name: EHPE3150, epoxy equivalent: 170 to 190 g/eq

(A-2) 지환식 고리를 갖지 않는 방향족 에폭시 수지(A-2) Aromatic epoxy resin having no alicyclic ring

A-2-1: 다작용 방향족 에폭시 수지, 가부시키가이샤 프린테크 제조, 상품명: VG3101L, 에폭시 당량: 210 g/eqA-2-1: polyfunctional aromatic epoxy resin, manufactured by Printec Co., Ltd., trade name: VG3101L, epoxy equivalent: 210 g/eq

A-2-2: 크레졸노볼락형 에폭시 수지, 신닛테츠스미킨가가쿠 가부시키가이샤 제조, 상품명: YDCN-700-10, 에폭시 당량: 209 g/eqA-2-2: cresol novolac type epoxy resin, manufactured by Nippon Steel & Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent: 209 g/eq

A-2-3: 비스페놀 F형 에폭시 수지(25℃에서 액체), DIC 가부시키가이샤 제조, 상품명: EXA-830CRP, 에폭시 당량: 159 g/eqA-2-3: Bisphenol F type epoxy resin (liquid at 25°C), manufactured by DIC Corporation, trade name: EXA-830CRP, epoxy equivalent: 159 g/eq

(B) 경화제(B) curing agent

B-1: 비스페놀 A 노볼락형 페놀 수지, DIC 가부시키가이샤 제조, 상품명: LF-4871, 수산기 당량: 118 g/eqB-1: bisphenol A novolak-type phenolic resin, manufactured by DIC Corporation, trade name: LF-4871, hydroxyl equivalent: 118 g/eq

B-2: 페닐아랄킬형 페놀 수지, 미츠이가가쿠 가부시키가이샤 제조, 상품명: XLC-LL, 수산기 당량: 175 g/eqB-2: phenylaralkyl type phenolic resin, manufactured by Mitsui Chemicals Co., Ltd., trade name: XLC-LL, hydroxyl equivalent: 175 g/eq

B-3: 페닐아랄킬형 페놀 수지, 에어·워터 가부시키가이샤 제조, 상품명: HE100C-30, 수산기 당량: 170 g/eqB-3: phenylaralkyl type phenolic resin, manufactured by Air Water Co., Ltd., trade name: HE100C-30, hydroxyl equivalent: 170 g/eq

(C) 엘라스토머(C) elastomer

C-1: 에폭시기 함유 아크릴 수지(아크릴 고무), 나가세켐텍스 가부시키가이샤 제조, 상품명: HTR-860P, 중량 평균 분자량: 80만, 글리시딜 작용기 모노머 비율: 3%, Tg: -7℃C-1: Epoxy group-containing acrylic resin (acrylic rubber), manufactured by Nagase Chemtex Co., Ltd., trade name: HTR-860P, weight average molecular weight: 800,000, glycidyl functional group monomer ratio: 3%, Tg: -7 ° C

C-2: 아크릴 수지(아크릴 고무), 나가세켐텍스 가부시키가이샤 제조, 상품명: SG-70L, 중량 평균 분자량: 90만, 산가: 5 ㎎KOH/g, Tg: -13℃C-2: Acrylic resin (acrylic rubber), manufactured by Nagase Chemtex Co., Ltd., trade name: SG-70L, weight average molecular weight: 900,000, acid value: 5 mgKOH/g, Tg: -13°C

(D) 무기 필러(D) inorganic filler

D-1: 실리카 필러 분산액, 용융 실리카, 가부시키가이샤 애드마텍스 제조, 상품명: SC2050-HLG, 평균 입경: 0.50 ㎛D-1: silica filler dispersion, fused silica, manufactured by Admatex Co., Ltd., trade name: SC2050-HLG, average particle size: 0.50 µm

(E) 경화 촉진제(E) curing accelerator

E-1: 1-시아노에틸-2-페닐이미다졸, 시코쿠가세이고교 가부시키가이샤 제조, 상품명: 큐어졸 2PZ-CNE-1: 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Chemical Industry Co., Ltd., trade name: Curesol 2PZ-CN

<각종 물성의 평가><Evaluation of various physical properties>

얻어진 접착 시트에 대해서, 매립성 및 블리드량의 평가를 행하였다.About the obtained adhesive sheet, embedding property and bleed amount were evaluated.

[매립성 평가][Evaluation of landfillability]

접착 시트의 매립성을 이하의 평가 샘플을 제작하여 평가하였다. 상기에서 얻어진 필름형 접착제(두께 110 ㎛)를, 기재 필름을 벗기고, 다이싱 테이프에 첩부하여, 다이싱 다이본딩 일체형 접착 시트를 얻었다. 다음에, 두께 100 ㎛의 반도체 웨이퍼(8인치)를, 접착제측에 70℃로 가열하여 접착하였다. 그 후, 이 반도체 웨이퍼를 한 변이 7.5 ㎜인 사각형으로 다이싱함으로써, 반도체 칩 A를 얻었다. 다음에, 다이싱 다이본딩 일체형 접착 시트(히타치가세이 가부시키가이샤 제조, 상품명: HR9004-10)(두께 10 ㎛)를 준비하고, 두께 50 ㎛의 반도체 웨이퍼(8인치)에 70℃로 가열하여 첩부하였다. 그 후, 이 반도체 웨이퍼를 한 변이 4.5 ㎜인 사각형으로 다이싱함으로써, 다이본딩 필름을 갖는 반도체 칩 B를 얻었다. 계속해서, 솔더레지스트(타이요닛산 가부시키가이샤 제조, 상품명: AUS308)를 도포한 총 두께 260 ㎛의 평가용 기판을 준비하고, 다이본딩 필름을 갖는 반도체 칩 B의 다이본딩 필름과 평가용 기판의 솔더레지스트를 접하도록, 120℃, 0.20 ㎫, 2초간의 조건에서 압착하였다. 그 후, 반도체 칩 A의 필름형 접착제와 반도체 칩 B의 반도체 웨이퍼와가 접하도록, 120℃, 0.20 ㎫, 1.5초간의 조건에서 압착하여, 평가 샘플을 얻었다. 이때, 앞서 압착한 반도체 칩 B가 반도체 칩 A의 중앙이 되도록 위치 맞춤을 행하였다. 이와 같이 하여 얻어진 평가 샘플을 초음파 디지털 화상 진단 장치(인사이트 가부시키가이샤 제조, 프로브: 75 ㎒)로 보이드의 관측의 유무를 관측하고, 보이드가 관측된 경우는, 단위 면적당의 보이드의 면적의 비율을 산출하고, 이들의 분석 결과를 매립성으로서 평가하였다. 평가 기준은, 이하와 같다. 결과를 표 1 및 표 2에 나타낸다.The embedding of the adhesive sheet was evaluated by preparing the following evaluation samples. The film adhesive (thickness: 110 μm) obtained above was peeled off the base film and adhered to a dicing tape to obtain a dicing die-bonding integrated adhesive sheet. Next, a semiconductor wafer (8 inches) with a thickness of 100 μm was bonded to the adhesive side by heating at 70°C. After that, the semiconductor chip A was obtained by dicing this semiconductor wafer into a square having a side of 7.5 mm. Next, a dicing die-bonding integrated adhesive sheet (trade name: HR9004-10, manufactured by Hitachigasei Co., Ltd.) (thickness: 10 μm) was prepared, and heated to 70° C. on a semiconductor wafer (8 inches) having a thickness of 50 μm. attached. Thereafter, the semiconductor chip B having a die-bonding film was obtained by dicing this semiconductor wafer into a square having a side of 4.5 mm. Subsequently, a substrate for evaluation having a total thickness of 260 μm coated with a solder resist (manufactured by Taiyo Nissan Co., Ltd., trade name: AUS308) was prepared, and the die-bonding film of the semiconductor chip B having the die-bonding film and the solder of the substrate for evaluation It was pressed under conditions of 120°C, 0.20 MPa, and 2 seconds to contact the resist. Then, it crimped|bonded under conditions for 120 degreeC, 0.20 Mpa, and 1.5 second so that the film adhesive of semiconductor chip A and the semiconductor wafer of semiconductor chip B may contact, and the evaluation sample was obtained. At this time, position alignment was performed so that the previously crimped semiconductor chip B was the center of the semiconductor chip A. The evaluation sample obtained in this way was observed with an ultrasonic digital image diagnosis device (manufactured by Insight Co., Ltd., probe: 75 MHz) for observation of voids, and when voids were observed, the ratio of the area of voids per unit area was determined. was calculated, and these analysis results were evaluated as landfillability. The evaluation criteria are as follows. The results are shown in Table 1 and Table 2.

A: 보이드가 관측되지 않았다.A: No voids were observed.

B: 보이드가 관측되었지만, 그 비율이 5 면적% 미만이었다.B: Although voids were observed, the ratio was less than 5 area%.

C: 보이드가 관측되고, 그 비율이 5 면적% 이상이었다.C: Voids were observed, and the ratio was 5 area% or more.

[블리드량 평가][Evaluation of bleed amount]

상기 매립성 평가에서 제작한 평가 샘플과 동일하게 하여, 블리드량 평가의 평가 샘플을 제작하였다. 현미경을 이용하여, 평가 샘플의 4변의 중심으로부터, 필름형 접착제의 비어져 나옴량을 측장하고, 그 최대값을 블리드량으로 하였다. 결과를 표 1 및 표 2에 나타낸다.An evaluation sample for bleed amount evaluation was prepared in the same manner as the evaluation sample produced for the embedding property evaluation. Using a microscope, the amount of protrusion of the film adhesive was measured from the center of the four sides of the evaluation sample, and the maximum value was made into the amount of bleed. The results are shown in Table 1 and Table 2.

[블리드량 평가][Evaluation of bleed amount]

상기 매립성 평가에서 「A」 또는 「B」였던 것에 대해서, 블리드량 평가를 행하였다. 상기 매립성 평가에서 제작한 평가 샘플과 동일하게 하여, 블리드량 평가의 평가 샘플을 제작하였다. 현미경을 이용하여, 평가 샘플의 4변의 중심으로부터, 필름형 접착제의 비어져 나옴량을 측장하고, 그 최대값을 블리드량으로 하였다. 결과를 표 1 및 표 2에 나타낸다.The bleed amount was evaluated for those rated "A" or "B" in the above embedding property evaluation. An evaluation sample for bleed amount evaluation was prepared in the same manner as the evaluation sample produced for the embedding property evaluation. Using a microscope, the amount of protrusion of the film adhesive was measured from the center of the four sides of the evaluation sample, and the maximum value was made into the amount of bleed. The results are shown in Table 1 and Table 2.

Figure 112022095635028-pat00006
Figure 112022095635028-pat00006

Figure 112022095635028-pat00007
Figure 112022095635028-pat00007

표 1에 나타내는 바와 같이, 지환식 고리를 갖는 에폭시 수지를 포함하는 실시예 1∼3은, 그것을 포함하지 않는 비교예 1∼3에 비해서, 양호한 매립성을 유지하면서, 블리드를 억제할 수 있었다. 또한, 표 2의 실시예 4∼8로부터, 다른 지환식 고리를 갖는 에폭시 수지를 이용한 경우에 있어서도, 동일한 경향이 있는 것이 판명되었다. 이들 결과로부터, 본 발명에 따른 접착제 조성물이, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능한 것이 확인되었다.As shown in Table 1, Examples 1 to 3 containing the epoxy resin having an alicyclic ring were able to suppress bleeding while maintaining good embedding performance compared to Comparative Examples 1 to 3 not containing the epoxy resin. Further, from Examples 4 to 8 in Table 2, it was found that the same tendency exists even when epoxy resins having other alicyclic rings were used. From these results, it was confirmed that the adhesive composition according to the present invention can suppress bleeding while having good embedding properties during thermal compression.

이상의 결과와 같이, 본 발명에 따른 접착제 조성물은, 열 압착 시의 매립성이 양호하여, 블리드를 억제할 수 있기 때문에, 접착제 조성물을 필름형으로 형성하여 이루어지는 필름형 접착제는, 칩 매립형 필름형 접착제인 FOD(Film Over Die) 또는 와이어 매립형 필름형 접착제인 FOW(Film Over Wire)로서 유용할 수 있다.As a result of the above, since the adhesive composition according to the present invention has good embedding properties during thermal compression and can suppress bleeding, the film adhesive formed by forming the adhesive composition into a film form is a chip-embedded film adhesive It can be useful as FOD (Film Over Die) or FOW (Film Over Wire), which is a wire-embedded film adhesive.

10…필름형 접착제, 14…기판, 20…기재, 30…보호 필름, 41…접착제, 42…밀봉재, 84, 94…회로 패턴, 88…제1 와이어, 90…유기 기판, 98…제2 와이어, 100, 110…접착 시트, 200…반도체 장치, Wa…제1 반도체 소자, Waa…제2 반도체 소자.10... film adhesive, 14 . . . substrate, 20 . . . materials, 30 . . . protective film, 41 . . . adhesive, 42 . . . sealing material, 84, 94... circuit pattern, 88 . . . 1st wire, 90... organic substrate, 98 . . . 2nd wire, 100, 110... adhesive sheet, 200 . . . Semiconductor device, Wa... 1st semiconductor element, Waa... A second semiconductor element.

Claims (13)

열경화성 수지와, 경화제와, 엘라스토머를 함유하고,
상기 열경화성 수지가 지환식 고리를 갖는 에폭시 수지 만으로 이루어지고, 이 때, 지환식 고리를 갖는 에폭시 수지는 하기 일반식 (1a)로 표시되는 에폭시 수지를 포함하며,
상기 열경화성 수지와 상기 경화제의 합계의 함유량은, 접착제 조성물 전량을 기준으로 하여, 30∼50 질량%인, 접착제 조성물:
Figure 112023057172461-pat00017

식 (1a) 중, n1은 1∼10의 정수를 나타낸다.Contains a thermosetting resin, a curing agent and an elastomer,
The thermosetting resin is made of only an epoxy resin having an alicyclic ring, and at this time, the epoxy resin having an alicyclic ring includes an epoxy resin represented by the following general formula (1a),
The content of the total of the thermosetting resin and the curing agent is 30 to 50% by mass based on the total amount of the adhesive composition, the adhesive composition:
Figure 112023057172461-pat00017

In Formula (1a), n1 represents the integer of 1-10. 제1항에 있어서, 상기 경화제가 페놀 수지를 포함하는 것인 접착제 조성물.The adhesive composition according to claim 1, wherein the curing agent comprises a phenolic resin. 제1항 또는 제2항에 있어서, 상기 엘라스토머가 아크릴 수지를 포함하는 것인 접착제 조성물.The adhesive composition according to claim 1 or 2, wherein the elastomer comprises an acrylic resin. 삭제delete 삭제delete 제1항 또는 제2항에 있어서, 무기 필러를 더 함유하는 접착제 조성물.The adhesive composition according to claim 1 or 2, further comprising an inorganic filler. 제1항 또는 제2항에 있어서, 경화 촉진제를 더 함유하는 접착제 조성물.The adhesive composition according to claim 1 or 2, further comprising a curing accelerator. 제1항 또는 제2항에 있어서, 기판 상에 제1 와이어를 통해 제1 반도체 소자가 와이어 본딩 접속되며, 제1 반도체 소자 상에, 제2 반도체 소자가 압착되어 이루어지는 반도체 장치에 있어서, 제2 반도체 소자를 압착하며 제1 와이어의 적어도 일부를 매립하기 위해 이용되는, 접착제 조성물.The semiconductor device according to claim 1 or 2, wherein a first semiconductor element is wire-bonded connected to a substrate via a first wire, and a second semiconductor element is pressed onto the first semiconductor element. An adhesive composition used to embed at least a portion of a first wire while compressing a semiconductor element. 제1항 또는 제2항에 기재된 접착제 조성물을 필름형으로 형성하여 이루어지는 필름형 접착제.A film adhesive formed by forming the adhesive composition according to claim 1 or 2 into a film form. 기재와,
상기 기재 상에 마련된, 제9항에 기재된 필름형 접착제
를 구비하는 접착 시트.equipment and
The film adhesive according to claim 9, provided on the substrate
An adhesive sheet comprising a. 제10항에 있어서, 상기 기재가 다이싱 테이프인 접착 시트.The adhesive sheet according to claim 10, wherein the substrate is a dicing tape. 제10항에 있어서, 상기 필름형 접착제의 상기 기재와는 반대측의 면에 적층된 보호 필름을 더 구비하는 접착 시트.The adhesive sheet according to claim 10, further comprising a protective film laminated on a surface of the film adhesive opposite to the base material. 기판 상에 제1 와이어를 통해 제1 반도체 소자를 전기적으로 접속하는 와이어 본딩 공정과,
제2 반도체 소자의 편면에, 제9항에 기재된 필름형 접착제를 첩부하는 라미네이트 공정과,
상기 필름형 접착제가 첩부된 제2 반도체 소자를, 상기 필름형 접착제를 통해 압착함으로써, 상기 제1 와이어의 적어도 일부를 상기 필름형 접착제에 매립하는 다이본드 공정
을 구비하는, 반도체 장치의 제조 방법.A wire bonding process of electrically connecting a first semiconductor element on a substrate through a first wire;
A lamination step of attaching the film adhesive according to claim 9 to one side of the second semiconductor element;
A die-bonding step of embedding at least a part of the first wire in the film adhesive by crimping a second semiconductor element to which the film adhesive is attached through the film adhesive.
A method of manufacturing a semiconductor device comprising:
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