KR20200111703A - Semiconductor device manufacturing method and adhesive film - Google Patents

Abstract

In the present invention, a step of preparing a semiconductor wafer with an adhesive film having an adhesive film and a semiconductor wafer on the adhesive film in this order, a dicing step of dicing a semiconductor wafer with an adhesive film to obtain a semiconductor chip with an adhesive film, It includes a pressing process of compressing a semiconductor chip with an adhesive film to a semiconductor substrate, and the adhesive film includes a second film having a shear viscosity of 80°C different from the first film and the first film in this order from the adhesive film. 2 Disclosed is a method for manufacturing a semiconductor device in which the film has a shear viscosity of 500 Pa·s or more at 80°C.

Description

Semiconductor device manufacturing method and adhesive film

The present invention relates to a method of manufacturing a semiconductor device and an adhesive film.

Conventionally, a silver paste is mainly used for bonding a semiconductor chip and a semiconductor substrate. However, with the recent miniaturization and integration of semiconductor chips, miniaturization and miniaturization have been demanded for used semiconductor substrates. On the other hand, in the case of using a silver paste, there may be problems such as occurrence of problems in wire bonding due to protrusion of the paste or inclination of the semiconductor chip, difficulty in controlling the film thickness, and generation of voids.

Therefore, recently, an adhesive film for bonding a semiconductor chip and a semiconductor substrate has been used (see, for example, Patent Document 1). In the case of using an adhesive film comprising a dicing tape and an adhesive film laminated on the dicing tape, an adhesive film is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is divided into pieces by dicing. An equipped semiconductor chip can be obtained. The obtained semiconductor chip with an adhesive film can be pasted to a semiconductor substrate via an adhesive film, and can be bonded by thermocompression bonding.

Patent Document 1: Patent Publication No. 2007-053240

However, with the miniaturization and integration of semiconductor chips, when the adhesive film is cured, warpage may occur in the semiconductor substrate of the semiconductor device. When warping occurs in the semiconductor substrate, for example, in the sealing process, the semiconductor chip may protrude from the sealing material, thereby causing electrical failure.

In addition, when FOW (Film Over Wire) which is a wire-embedded adhesive film or FOD (Film Over Die) which is a chip-embedded adhesive film is used, the warpage of the semiconductor substrate tends to increase further. In addition, in these adhesive films, since it is necessary to embed a wire, a controller chip, etc., warpage may also occur in a semiconductor chip provided with an adhesive film.

The present invention has been made in view of such a situation, and its main object is to provide a method of manufacturing a semiconductor device capable of suppressing warpage of a semiconductor substrate.

One aspect of the present invention is a process of preparing a semiconductor wafer with an adhesive film on an adhesive film, in which an adhesive film and a semiconductor wafer are provided in this order, and a die for dicing a semiconductor wafer with an adhesive film to obtain a semiconductor chip with an adhesive film A second film having a shearing process and a pressing process of compressing a semiconductor chip provided with an adhesive film to a semiconductor substrate, and the adhesive film having a shear viscosity of 80°C different from the first film and the first film, in this order from the adhesive film. And a second film having a shear viscosity of 500 Pa·s or more at 80° C. is provided. According to such a method of manufacturing a semiconductor device, it is possible to suppress the warpage of the semiconductor substrate.

The thickness of the second film may be 3 to 150 µm. The storage modulus at 150° C. after curing of the second film may be 1000 MPa or less.

In the semiconductor device, at least a part of the first wire is adhered by bonding the first semiconductor chip to the semiconductor substrate through a first wire by wire bonding, and by compressing the second semiconductor chip on the first semiconductor chip through an adhesive film. A wire-embedded type semiconductor device embedded in a film may be used, or a chip-embedded semiconductor device formed by embedding the first wire and the first semiconductor chip in an adhesive film may be used. In such a semiconductor device, not only the warpage of the semiconductor substrate, but also warpage of the semiconductor chip (second semiconductor chip) provided with the adhesive film can be suppressed.

In another aspect, the present invention has a first film and a second film laminated on the first film and having a shear viscosity of 80° C. different from that of the first film, and the shear viscosity of the second film is 80° C. It provides an adhesive film of 500 Pa·s or more.

The thickness of the second film may be 3 to 150 µm. The storage modulus at 150° C. after curing of the second film may be 1000 MPa or less.

In the above-described adhesive film, in a semiconductor device in which a first semiconductor chip is connected by wire bonding through a first wire on a semiconductor substrate, and a second semiconductor chip is pressed onto the first semiconductor chip, the second semiconductor chip is In addition to crimping, it may be used for embedding at least a part of the first wire (i.e., for FOW), or for embedding the first wire and the first semiconductor chip (i.e., for FOD). .

According to the present invention, a method for manufacturing a semiconductor device capable of suppressing warpage of a semiconductor substrate is provided. The manufacturing method according to several forms can also suppress the warpage of the semiconductor chip with an adhesive film. Further, according to the present invention, an adhesive film used in such a manufacturing method is provided.

1 is a schematic diagram of a film provided with a base film and an adhesive film.
2A is a schematic diagram of a film provided with a base film and an adhesive film. (b) is a schematic diagram of a film provided with a base film and an adhesive film. (c) is a schematic diagram of an adhesive film.
3 is a schematic diagram of an adhesive film.
4 is a schematic diagram of a semiconductor wafer with an adhesive film.
5 is a schematic diagram showing a dicing process.
6 is a schematic diagram showing an ultraviolet irradiation step.
7 is a schematic diagram showing a pickup process.
8 is a schematic diagram showing a pressing process.
9 is a schematic diagram showing an embodiment of a semiconductor device.
10 is a schematic diagram showing an embodiment of a semiconductor device.
11 is a schematic diagram showing a manufacturing process of a semiconductor device.
12 is a schematic diagram showing a manufacturing process of a semiconductor device.
13 is a schematic diagram showing an embodiment of a semiconductor device.
14 is a schematic diagram showing a manufacturing process of a semiconductor device.
15 is a schematic diagram showing a manufacturing process of a semiconductor device.
16 is a schematic diagram showing a manufacturing process of a semiconductor device.
17 is a schematic diagram showing a manufacturing process of a semiconductor device.
18 is a schematic diagram showing a manufacturing process of a semiconductor device.
Fig. 19 is a diagram showing a raised surface of a pickup collet.

Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, this invention is not limited to the following embodiment.

In the present specification, (meth)acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as (meth)acryloyl group.

<Method of manufacturing semiconductor device>

[Preparation process]

In this step, a semiconductor wafer with an adhesive film to be subjected to dicing is prepared.

An example of a method for producing an adhesive film will be described. First, a separate adhesive, a first adhesive, and a second adhesive are applied on the base films 1, 4a and 4b, respectively, and the film 100 with the base film 1 and the adhesive film 2 (Fig. 1) And, the film 110 with the base film 4a and the first film 3a (Fig. 2(a)), and the film 120 with the base film 4b and the second film 3b (Fig. 2 (b)) is produced. Thereafter, the base film 4a and the base film 4b are peeled off from the film 110 and the film 120, and the first film 3a and the second film 3b are adhered to each other, and the adhesive film 130 (Fig. Prepare 2(c)). Subsequently, on the film 100, the adhesive film 2, the first film 3a, and the second film 3b are stacked in order, and the base film 1, the adhesive film 2, and the adhesive film 130 ), it is possible to obtain an adhesive sheet 200 (Fig. 3). The adhesive sheet 200 may be produced by a method of applying a first adhesive varnish on the film 100 (FIG. 1) and then applying a second adhesive varnish. In addition, what has removed the base film 1 from the adhesive sheet 200 is sometimes referred to as a dicing-die bonding integrated adhesive film 140. After that, by attaching the semiconductor wafer A on the adhesive film 130, the semiconductor wafer 300 with an adhesive film can be obtained (Fig. 4). That is, the semiconductor wafer 300 with an adhesive film obtained in this way can be said to be a laminate comprising an adhesive film and a semiconductor wafer on the adhesive film in this order.

As the base film 1, 4a, and 4b, plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyimide film, etc. are mentioned, for example. The base film may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, as necessary.

The adhesive film 2 can be formed of a pressure-sensitive or ultraviolet-curable adhesive. The thickness of the adhesive film 2 can be appropriately set according to the shape and dimensions of the semiconductor device to be manufactured, but is preferably 1 to 100 µm, more preferably 5 to 70 µm, and still more preferably 10 to 40 µm. to be.

(Adhesive film)

The adhesive film 130 includes a first film 3a and a second film laminated on the first film 3a and having a shear viscosity of 80° C. different from that of the first film 3a. In addition, the shear viscosity at 80°C of the second film 3b is 500 Pa·s or more.

Both the first film 3a and the second film 3b are thermosetting, a first adhesive and a second adhesive capable of undergoing a semi-cured (B stage) state to become a fully cured product (C stage) after curing treatment It can be formed by The first film 3a and the second film 3b are thermosetting resin (hereinafter, simply referred to as "component (a)" in some cases), and a high molecular weight component (hereinafter simply referred to as "component (b)"). It is preferable to contain) and an inorganic filler (hereinafter, simply referred to as "component (c)" in some cases.). The first film 3a and the second film 3b have a coupling agent (hereinafter, simply referred to as "component (d)") and a curing accelerator (hereinafter, simply referred to as "component (e)"). It may contain additionally.

(a) thermosetting resin

The component (a) is an epoxy resin (hereinafter, simply referred to as ``(a1) component'' in some cases) and a phenol resin (hereinafter simply referred to as ``(a2) component'' as a curing agent for the epoxy resin) from the viewpoint of adhesiveness. It is preferable to include "in some cases.).

The component (a1) can be used without particular limitation as long as it has an epoxy group in its molecule. As the component (a1), for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F no Rock type epoxy resin, stilbene type epoxy resin, triazine skeleton containing epoxy resin, fluorene skeleton containing epoxy resin, triphenol phenolmethane type epoxy resin, biphenyl type epoxy resin, xylene type epoxy resin, biphenyl aralkyl type epoxy resin , Naphthalene-type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene. These may be used alone or in combination of two or more. Among these, the component (a1) may be a cresol novolak type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of film tackiness and flexibility.

The component (a1) may contain an epoxy resin having a softening point of less than 30°C or a liquid at room temperature (25°C). By including such an epoxy resin, the obtained film can impart flexibility, the embedding property of chips, wires or semiconductor substrates is further improved, and warpage due to insufficient embedding tends to be alleviated.

The component (a1) may contain an epoxy resin having a softening point of 50°C or higher. In this case, it is preferable to use what is excellent in fluidity when softened.

The component (a2) can be used without particular limitation as long as it has a phenolic hydroxyl group in its molecule. (a2) As a component, for example, phenols, such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene. And phenols such as novolak type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolac, phenol, etc. obtained by condensing or co-condensing a compound having an aldehyde group such as formaldehyde under an acidic catalyst, and/or Phenol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, naphthol aralkyl resins, and the like. These may be used alone or in combination of two or more. Among these, the component (a2) may be a phenol aralkyl resin or a naphthol aralkyl resin.

The hydroxyl group equivalent of the component (a2) is preferably 70 g/eq or more, and more preferably 70 to 300 g/eq. If the hydroxyl equivalent of the component (a2) is 70 g/eq or more, the storage elastic modulus of the film tends to be more improved, and if it is 300 g/eq or less, problems caused by foaming and outgases can be prevented. There will be.

The softening point of the component (a2) is preferably 50 to 200°C, more preferably 60 to 150°C. When the softening point of the component (a2) is 200°C or less, there is a tendency that it is possible to suppress a decrease in compatibility with an epoxy resin.

The ratio of the epoxy equivalent of the component (a1) and the equivalent of the hydroxyl group of the component (a2) (the epoxy equivalent of the component (a1) / the equivalent of the hydroxyl group of the component (a2)) is from the viewpoint of curability, from 0.30/0.70 to 0.70/0.30, 0.35 /0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40 or 0.45/0.55 to 0.55/0.45 may be used. When the above equivalent ratio is 0.30/0.70 or more, there is a tendency that more sufficient curability can be obtained. When the above equivalent ratio is 0.70/0.30 or less, it is possible to prevent the viscosity from becoming too high, so that more sufficient fluidity can be obtained.

The content of the component (a) may be 5 to 70 parts by mass, 10 to 65 parts by mass, or 20 to 60 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c). When the content of the component (a) is 5 parts by mass or more, the elastic modulus tends to be improved by crosslinking. When the content of the component (a) is 70 parts by mass or less, the film handling property can be maintained, and the shear viscosity and the elastic modulus tend to be in a desired range.

(b) high molecular weight component

It is preferable that the component (b) has a glass transition temperature (Tg) of 50°C or less. Examples of the component (b) include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin, acrylonitrile resin, and the like; These modified products, etc. are mentioned.

The component (b) may contain an acrylic resin from the viewpoint of fluidity. Here, the acrylic resin means a polymer containing a structural unit derived from a (meth)acrylic acid ester. The acrylic resin is preferably a polymer containing, as a structural unit, a structural unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group. Further, the acrylic resin may be an acrylic rubber such as a copolymer of (meth)acrylic acid ester and acrylnitrile.

The glass transition temperature (Tg) of the acrylic resin may be -50 to 50°C or -30 to 30°C. When the Tg of the acrylic resin is -50° C. or higher, there is a tendency that the flexibility of the adhesive can be prevented from becoming too high. Accordingly, it becomes easy to cut the film adhesive during wafer dicing, and it is possible to prevent the occurrence of burrs. When the Tg of the acrylic resin is 50° C. or less, there is a tendency that the decrease in flexibility of the adhesive can be suppressed. Accordingly, when the film adhesive is applied to the wafer, there is a tendency that it becomes easy to sufficiently fill the voids. In addition, chipping during dicing due to a decrease in the adhesion of the wafer can be prevented. Here, the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Riga Corporation).

The weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3 million or 200,000 to 2 million. When the Mw of the acrylic resin is in this range, it is possible to appropriately control film formation, strength in film form, flexibility, tackiness, etc., and excellent reflowability, thereby improving embedding property. have. In addition, by using an acrylic resin having a low Mw (eg, less than 100,000), and by increasing the amount of the acrylic resin having a low Mw (eg, less than 100,000), the embedding property tends to be improved, but shear viscosity and curing The later storage modulus tends to decrease. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.

Commercially available products of acrylic resin include, for example, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-30B (all are Nagase Chemtex Co., Ltd. Manufacturing).

The content of the component (b) may be 5 to 95 parts by mass, 5 to 85 parts by mass, or 10 to 80 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c). When the content of the component (b) is 5 parts by mass or more, the shear viscosity of the film at 80°C tends to increase.

(c) inorganic filler

Examples of the component (c) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica, and the like. . These may be used alone or in combination of two or more. Among these, the component (c) may be silica from the viewpoint of adjusting the melt viscosity.

The average particle diameter of the component (c) may be 0.01 to 1 µm, 0.01 to 0.08 µm, or 0.03 to 0.06 µm from the viewpoint of fluidity. Here, the average particle diameter means a value obtained by converting from the BET specific surface area.

The content of the component (c) may be 3 to 80 parts by mass, 3 to 70 parts by mass, or 3 to 60 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c). When the content of the component (c) is 3 parts by mass or more, the shear viscosity and elastic modulus tend to be further improved.

(d) coupling agent

The component (d) may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane. And the like. These may be used alone or in combination of two or more.

(e) hardening accelerator

The component (e) is not particularly limited, and those generally used may be used. Examples of the component (e) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. Among these, from the viewpoint of reactivity, the component (e) may be imidazoles and derivatives thereof.

Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. Can be mentioned. These may be used alone or in combination of two or more.

The first film 3a and the second film 3b may further contain other components. As other components, a pigment, an ion scavenger, an antioxidant, etc. are mentioned, for example.

The content of the component (d), the component (e) and other components may be 0 to 30 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c).

The first film 3a and the second film 3b are a first adhesive varnish and a second adhesive varnish containing components (a) to (c) and, if necessary, components (d) and (e) and a solvent. It can be formed by preparing, applying these to a base film, and removing a solvent by heating and drying. The first adhesive varnish and the second adhesive varnish can be prepared, for example, by mixing and kneading components (a) to (e) in a solvent.

Mixing and kneading can be performed by using a conventional stirrer, raker, three roll, or a dispersing machine such as a ball mill, and appropriately combining them.

The solvent for producing the first adhesive varnish and the second adhesive varnish is not limited as long as it is capable of uniformly dissolving, kneading, or dispersing the respective components, and a conventionally known solvent may be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethyl formamide, dimethyl acetamide, N-methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, or the like from the viewpoint of fast drying speed and low price.

As a method of applying the first adhesive varnish and the second adhesive varnish to the base film, a known method can be used, such as knife coat method, roll coat method, spray coat method, gravure coat method, bar coat method, curtain coat method, etc. Can be mentioned. The conditions for heating and drying are not particularly limited as long as the solvent used is sufficiently evaporated, but can be performed by heating at 50 to 150°C for 1 to 30 minutes.

The thickness of the first film 3a can be appropriately set according to the shape or dimension of the semiconductor device to be manufactured, but may be, for example, 1 to 200 µm. The thickness of the first film 3a may be 3 to 150 µm or 3 to 120 µm. In addition, in FOW use, it is preferably 20 to 120 µm, more preferably 30 to 80 µm. In order to bury the wire, it is necessary to ensure a sufficient thickness so that the wire does not contact the chip. For FOD applications, it is preferably 40 to 200 µm, more preferably 60 to 150 µm. In order to embed a chip (eg, a controller chip), it depends on its thickness, but it is important to ensure sufficient thickness.

The thickness of the second film 3b can be appropriately set according to the shape or dimension of the semiconductor device to be manufactured, but may be, for example, 3 to 150 µm. The thickness of the second film 3b may be 3 to 100 µm or 3 to 50 µm. In addition, in the FOW use, it is preferably 3 to 150 µm, more preferably 3 to 80 µm. In order to bury the wire, it is necessary to ensure a sufficient thickness so that the wire does not contact the chip. For FOD applications, it is preferably 3 to 150 µm, more preferably 3 to 100 µm. In order to embed a chip (eg, a controller chip), it depends on its thickness, but it is important to ensure sufficient thickness.

The thickness of the adhesive film 130 composed of the first film 3a and the second film 3b can be appropriately set according to the shape or dimension of the semiconductor device to be manufactured, but is preferably 6 to 300 µm. It is preferably 10 to 250 µm, more preferably 20 to 200 µm. Further, in the FOW use, preferably 40 to 250 µm, more preferably 50 to 80 µm. In order to bury the wire, it is necessary to ensure a sufficient thickness so that the wire does not contact the chip. In FOD applications, it is preferably 60 to 250 µm, more preferably 80 to 150 µm. In order to embed a chip (eg, a controller chip), it depends on its thickness, but it is important to ensure sufficient thickness.

The 80°C shear viscosity of the first film 3a is not particularly limited as long as it is different from the 80°C shear viscosity of the second film 3b. When the shear viscosity of the first film 3a at 80° C. is higher than the shear viscosity at 80° C. of the second film 3b, the second film 3b buffers the bending stress and the warpage of the semiconductor substrate is reduced to the top surface of the chip. Since propagation becomes difficult, there is a tendency that the warpage of the semiconductor substrate is suppressed as a result. In addition, if the second film 3b is lower than the shear viscosity of 80°C, the second film 3b becomes difficult to follow the stress caused by the warpage of the chip and the semiconductor substrate, so that the warpage of the semiconductor substrate tends to be suppressed. have. It is preferable that the 80 degreeC shear viscosity of the 1st film 3a is lower than the 80 degreeC shear viscosity of the 2nd film 3b from a viewpoint that warpage of a semiconductor substrate is suppressed more.

The shear viscosity of the first film 3a at 80° C. may be, for example, 500 to 30000 Pa·s. The shear viscosity at 80°C of the first film 3a may be 500 Pa·s or more, 700 Pa·s or more, or 1000 Pa·s or more. When the 80 degreeC shear viscosity of the 1st film 3a is 500 Pa·s or more, the handleability of a film tends to be more excellent. The shear viscosity of the first film 3a at 80° C. may be 30000 Pa·s or less, 20000 Pa·s or less, or 15000 Pa·s or less. When the shear viscosity of the first film 3a at 80° C. is 30000 Pa·s or less, the chip, wire, or semiconductor substrate can be sufficiently embedded, and there is a tendency that warpage can be suppressed.

The second film 3b has a shear viscosity of 80° C. different from that of the first film 3a. The shear viscosity of the second film 3b at 80° C. is 500 Pa·s or more. The shear viscosity of the second film 3b at 80° C. is not particularly limited as long as it satisfies these conditions. For the same reason as described above, the shear viscosity of the second film 3b at 80° C. is preferably higher than the shear viscosity at 80° C. of the first film 3a from the viewpoint of more suppressing the warpage of the semiconductor substrate.

The shear viscosity at 80°C of the second film 3b is 500 Pa·s or more, 3000 Pa·s or more, 5000 Pa·s or more, 10000 Pa·s or more, 15000 Pa·s or more, 20000 Pa·s or more Alternatively, it may be 25000 Pa·s or more. When the shear viscosity of the second film 3b at 80° C. is 500 Pa·s or more, the handleability of the film tends to be more excellent. The upper limit of the shear viscosity of the second film 3b at 80° C. is not particularly limited, but may be 100000 Pa·s or less, 70000 Pa·s or less, or 50000 Pa·s or less.

In addition, the 80 degreeC shear viscosity of the 1st film 3a and the 2nd film 3b can be measured, for example by the method described in Examples.

The 80 degreeC shear viscosity of the 1st film 3a and the 2nd film 3b can be adjusted, for example by changing the kind and content of components contained in these films.

The storage modulus at 150° C. after curing of the first film 3a is not particularly limited, but may be 1000 MPa or less, 500 MPa or less, or 300 MPa or less, and may be 10 MPa or more, 15 MPa or more, or 20 MPa or more. When the storage modulus at 150° C. after curing of the first film 3a is 1000 MPa or less, chips, wires, or semiconductor substrates can be sufficiently embedded, and there is a tendency that warpage can be suppressed. When the storage elastic modulus at 150° C. after curing of the first film 3a is 10 MPa or more, there is a tendency that the film is prevented from being crushed at the time of compression bonding, and protrusion from the chip end portion can be suppressed.

The storage modulus at 150° C. after curing of the second film 3b may be 1000 MPa or less. The storage modulus at 150° C. after curing of the second film 3b may be 500 MPa or less, 100 MPa or less, or 70 MPa or less, and may be 10 MPa or more, 15 MPa or more, or 20 MPa or more. When the storage elastic modulus at 150° C. after curing of the second film 3b is 1000 MPa or less, there is a tendency that the warpage of the semiconductor substrate or chip can be further reduced.

In addition, the storage modulus at 150° C. after curing of the first film 3a and the second film 3b can be measured, for example, by a method described in Examples.

The adhesive film 130 laminates the first film 3a and the second film 3b under predetermined conditions (eg, room temperature (20°C) or heated state) using a roll laminator, a vacuum laminator, or the like, and It can be produced by removing (4a and 4b).

In the adhesive film 130, first, the varnish of the first adhesive composition is applied to the base film, and the solvent is heated and dried to remove the first film 3a, followed by a second adhesive on the first film 3a. It may be produced by applying the varnish of the composition, heating and drying the solvent to remove it to form a second adhesive film, and removing the base film.

The semiconductor wafer A is not particularly limited, but a thin semiconductor wafer of 10 to 100 µm can be used, for example. Further, as the semiconductor wafer (A), in addition to single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, etc.

[Dicing process]

After that, as shown in FIG. 5, the semiconductor wafer 300 with an adhesive film is diced using, for example, a blade B, and further washing and drying steps are added. Thereby, it is diced up to the adhesive film 130, and the semiconductor chip provided with the adhesive film (separated) can be obtained. For dicing, a dicer may be used instead of the blade B. As the blade B, for example, a dicing blade NBC-ZH05 series, NBC-ZH series, etc. manufactured by Disco Corporation can be used. As the dicer, for example, a full-automatic dicing saw 6000 series, a semi-automatic dicing saw 3000 series (all manufactured by Disco Corporation) or the like can be used. Further, at the time of dicing, a wafer ring (not shown) is disposed around the semiconductor wafer A, and the semiconductor wafer A is fixed through the adhesive film. The bonding surface of the semiconductor wafer A to the adhesive film may be a circuit surface or may be a surface opposite to the circuit surface.

The semiconductor chip size is preferably 20 mm or less on one side, that is, 20 mm x 20 mm or less. The semiconductor chip size is more preferably 3 to 15 mm per side, and still more preferably 5 to 10 mm per side. Further, the semiconductor substrate includes a chip or an equivalent thereof.

[UV irradiation process]

After the dicing step, an ultraviolet irradiation step of irradiating ultraviolet rays to the adhesive film 2 may be further provided (Fig. 6). Accordingly, part or most of the adhesive film 2 can be polymerized and cured. The illuminance of ultraviolet irradiation is not particularly limited, but is preferably 10 to 200 mW/cm 2, more preferably 20 to 150 mW/cm 2. In addition, the irradiation amount at the time of irradiation with ultraviolet rays is not particularly limited, but is preferably 50 to 400 mJ/cm 2, more preferably 100 to 250 mJ/cm 2.

[Pick-up process]

In the pickup step, the semiconductor chip a to be picked up is picked up by, for example, a suction collet 5. At this time, the semiconductor chip (a) to be picked up may be pushed up from the lower surface of the base film 1 by, for example, a needle punch. The adhesive force between the semiconductor chip (a) and the adhesive film 130 is higher than the adhesive force between the adhesive film 2 and the base film 1 and between the adhesive film 130 and the adhesive film 2, and the semiconductor chip (a ), the adhesive film 130 is peeled off in a state attached to the lower surface of the semiconductor chip a (see Fig. 7).

It is preferable that the adhesion between the adhesive film 2 and the first film 3a is smaller than the adhesion between the semiconductor wafer A and the second film 3b. If the adhesion is in such a relationship, it is possible to prevent peeling between the first film 3a and the second film 3b when the chip is pushed up in the pickup process. When peeling off at the interface between the first film 3a and the second film 3b, there is a tendency that the effect of reducing warpage cannot be obtained.

[Compression process]

Next, the semiconductor chip (a) is placed on the semiconductor substrate 6 through the adhesive film 130 and heated. By heating, the adhesive film 130 exhibits sufficient adhesive force, and adhesion of the semiconductor chip a and the semiconductor substrate 6 through the cured product 130c of the adhesive film is completed (FIG. 8). Here, as the semiconductor substrate 6, for example, a support member for mounting semiconductor chips, other semiconductor chips, and the like can be mentioned.

The pressing temperature is not particularly limited, but is preferably 50 to 200°C, more preferably 100 to 150°C. When the pressing temperature is high, the adhesive film 3 becomes flexible, so that the embedding property tends to be improved. The pressing time is not particularly limited, but is preferably 0.5 to 20 seconds, more preferably 1 to 5 seconds. The pressure during compression bonding is not particularly limited, but is preferably 0.01 to 5 MPa, more preferably 0.02 to 2 MPa. In FOW and FOD applications, it is preferable to set the pressing pressure high in order to improve the embedding property.

[Curing process]

After the pressing process, a curing process of curing the adhesive film 130 is performed. The temperature and time for curing the adhesive film 130 may be appropriately set according to the curing temperature of the components included in the adhesive film. The temperature may be changed step by step, and one having such a mechanism may be used. The temperature and time may be, for example, 40 to 300°C, or may be 30 to 300 minutes, for example.

<Semiconductor device>

The mode of the semiconductor device obtained by the manufacturing method of this embodiment is demonstrated concretely with reference to drawings. In addition, semiconductor devices of various structures have been proposed in recent years, and the semiconductor device obtained by the manufacturing method of this embodiment is not limited to the structure described below.

9 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 400 shown in FIG. 9 is formed by pressing a semiconductor chip (a), which is a semiconductor chip with an adhesive film, to a semiconductor substrate 10 through an adhesive film 130, and a wire on the semiconductor substrate 10 It is a semiconductor device in which the semiconductor chip (a) is wire bonded through (11). In this semiconductor device, the semiconductor chip (a) is adhered to the semiconductor substrate 10 by the cured product 130c of the adhesive film, and the connection terminal (not shown) of the semiconductor chip (a) is connected to the wire 11. It is electrically connected to an external connection terminal (not shown) through and is sealed by a sealing material 12.

10 is a schematic cross-sectional view showing an embodiment of a semiconductor device. In the semiconductor device 410 shown in FIG. 10, the first semiconductor chip a ₁ is wire-bonded on the semiconductor substrate 10 through the first wire 11a, and the first semiconductor chip a ₁ A wire-embedded semiconductor device in which at least a part of the first wire 11a is embedded in the adhesive film 130 by compressing the second semiconductor chip (a ₂ ), which is a semiconductor chip, which is a semiconductor chip, through the adhesive film 130 to be. In this semiconductor device, the first semiconductor chip (a ₁ ) is adhered to the semiconductor substrate 10 on which the terminal 13 is formed by the cured product 130c ₁ of the adhesive film, and the first semiconductor chip (a ₁ ) A second semiconductor chip (a ₂ ) is also adhered to the image by a cured product (130c ₂ ) of an adhesive film. A connection terminal (not shown) of the first semiconductor chip (a ₁ ) and the second semiconductor chip (a ₂ ) is electrically connected to the circuit pattern 14 through the first wire 11a and the second wire 11b. It is connected and sealed by the sealing material 12. As described above, the above-described manufacturing method is a semiconductor device having a structure in which a plurality of semiconductor chips are stacked, and can be suitably used even when a part of a wire needs to be embedded.

11 and 12 are diagrams showing a manufacturing procedure of the semiconductor device shown in FIG. 10. First, the first semiconductor chip (a ₁ ) with an adhesive film is heat-pressed and bonded to the semiconductor substrate 10 through the adhesive film 130. The first semiconductor chip a ₁ is embedded by the cured product 130c ₁ of an adhesive film. In this case, other general manufacturing methods may be used. After that, the semiconductor substrate shown in Fig. 11 is obtained by going through a wire bonding process. Next, the second semiconductor chip (a ₂ ) with an adhesive film is heat-pressed and bonded to the first semiconductor chip (a ₁ ) through the adhesive film 130. In this way, the semiconductor substrate shown in Fig. 12 is obtained. After that, the semiconductor device shown in Fig. 10 can be obtained by further passing through a wire bonding process and a sealing process.

13 is a schematic cross-sectional view showing an embodiment of a semiconductor device. In the semiconductor device 500 shown in FIG. 13, the first semiconductor chip a ₃ is wire-bonded on the semiconductor substrate 10 through the first wire 11a, and the first semiconductor chip a ₃ A second semiconductor chip (a ₄ ), which is a semiconductor chip provided with an adhesive film on the top and is larger than the area of the first semiconductor chip (a ₃ ), is compressed through the adhesive film 130, thereby It is a chip-embedded semiconductor device in which the chip a ₃ is embedded in the adhesive film 130. In the semiconductor device 500, the semiconductor substrate 10 and the second semiconductor chip a ₄ are also electrically connected through the second wire 11b, and the second semiconductor chip a ₄ is the sealing material 12 Sealed by

The thickness of the first semiconductor chip a ₃ may be 10 to 170 μm, and the thickness of the second semiconductor chip a ₄ may be 20 to 400 μm. The thickness of the cured product 130c ₅ of the adhesive film is 20 to 200 µm, preferably 30 to 200 µm, and more preferably 40 to 150 µm. The first semiconductor chip a ₃ embedded in the cured product 130c ₅ of the adhesive film is, for example, a controller chip for driving the semiconductor device 500.

The semiconductor substrate 10 may be, for example, an organic substrate on which the circuit pattern 14 is formed. The first semiconductor chip (a ₃ ) is pressed on the circuit pattern 14 through a cured product 130c ₃ of an adhesive film, and the second semiconductor chip (a ₄ ) is a first semiconductor chip (a ₃ ) The semiconductor substrate through the cured product 130c ₄ of the adhesive film to cover a part of the circuit pattern 14, the first semiconductor chip (a ₃ ), the first wire (11a) and the circuit pattern 14 that are not compressed. It is compressed to (10). A cured product 130c ₄ of an adhesive film is embedded in the step of the irregularities caused by the circuit pattern 14 on the semiconductor substrate 10. Then, the second semiconductor chip a ₄ , the circuit pattern 14 and the second wire 11b are sealed by the resin sealing material 12.

14 to 18 are diagrams showing a manufacturing procedure of the semiconductor device shown in FIG. 13. First, as shown in Fig. 14, the first semiconductor chip a3 with an adhesive film is pressed onto the circuit pattern 14 on the semiconductor substrate 10, and the first semiconductor chip a3 is pressed through the first wire 11a. The circuit pattern 14 and the first semiconductor chip a ₃ are electrically bonded to each other. In this case, other general manufacturing methods may be used.

Next, as shown in FIG. 15, a second semiconductor chip a ₄ with an adhesive film larger than the area of the first semiconductor chip a ₃ is prepared.

Then, the second semiconductor chip (a ₄ ) with an adhesive film is pressed onto the semiconductor substrate 10 to which the first semiconductor chip (a ₃ ) is bonded to each other through the first wire 11a. Specifically, as shown in Fig. 16, the second semiconductor chip (a ₄ ) with an adhesive film is disposed so that the adhesive film covers the first semiconductor chip (a ₃ ), and then, as shown in Fig. 17, The second semiconductor chip a ₄ is fixed to the semiconductor substrate 10 by pressing the second semiconductor chip a ₄ to the semiconductor substrate 10.

Next, as shown in FIG. 18, after electrically connecting the semiconductor substrate 10 and the second semiconductor chip a ₄ through the second wire 11 b, the circuit pattern 14 and the second wire 11 b ) And the second semiconductor chip a ₄ are sealed with a sealing material 12. The semiconductor device 500 can be manufactured by passing through such a process.

Example

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these Examples.

<Preparation of adhesive varnish>

[Synthesis Examples A to F]

Cyclohexanone was added to the composition containing (a) an epoxy resin and a phenol resin as a thermosetting resin, and (c) an inorganic filler at the product name and composition ratio (unit: parts by mass) shown in Table 1, followed by stirring and mixing. To this, (b) acrylic rubber as a high molecular weight component shown in Table 1 was added and stirred, and further added (d) a coupling agent and (e) a curing accelerator shown in Table 1, and stirred until each component became uniform. , The adhesive varnish of Synthesis Examples A to F was prepared.

Here, the symbols of each component in Table 1 mean the following.

(Epoxy resin)

YDCN-700-10 (brand name, manufactured by Shinnittetsu Sumikin Chemical Co., Ltd., o-cresol novolac type epoxy resin, epoxy equivalent: 209 g/eq)

EXA-830CRP (brand name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 159 g/eq)

YDF-8170C (brand name, manufactured by Shin-Nikka Epoxy Seijo Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent: 156, liquid at room temperature, weight molecular weight of about 310)

(Phenolic resin)

PSM-4326 (brand name, manufactured by Gunei Chemical Co., Ltd., phenol novolac resin, hydroxyl group equivalent: 105 g/eq)

HE-100C-30 (brand name, manufactured by Air Water Co., Ltd., phenyl aralkyl type phenol resin, hydroxyl group equivalent: 174 g/eq, softening point 77℃)

(Inorganic filler)

R972 (brand name, manufactured by Nippon Aerosil Co., Ltd., silica, average particle diameter: 0.016 µm)

SC2050-HLG (brand name, manufactured by Admatechs, silica filler dispersion, average particle diameter 0.50 µm)

(High molecular weight component)

HTR-860P-3CSP (brand name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: 12℃)

HTR-860P-3CSP-30DB (brand name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 300,000, Tg: 12℃)

(Coupling agent)

A-189 (Brand name, Momentive Performance, Materials, Japan Kodo Corporation, γ-mercaptopropyltrimethoxysilane)

A-1160 (trade name, Momentive Performance, Materials, Japan Kodo Corporation, γ-ureidopropyltriethoxysilane)

(Hardening accelerator)

2PZ-CN (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

<production of film>

(Production of Film A)

The adhesive varnish of Synthesis Example A was filtered through a 100 mesh filter and vacuum defoamed. As a base film, a 38 µm-thick polyethylene terephthalate (PET) film was prepared, and an adhesive varnish after vacuum defoaming was applied onto the PET film. The applied adhesive varnish was heated and dried at 90°C for 5 minutes and then at 140°C for 5 minutes in two steps. After heating and drying, the PET film was peeled off, and the film A in the B stage state was obtained. In this film A, the application amount of the adhesive varnish was adjusted to produce a film having a different thickness. Films having a thickness of 10 µm, 20 µm, 40 µm, 100 µm, 120 µm and 130 µm were set as films A-10, A-20, A-40, A-100, A-120 and A-130, respectively. .

(Measurement of shear viscosity of film A)

Shear viscosity was measured using ARES (manufactured by Reometrics Cyentipic). The measurement sample was produced by attaching a die bonding film (manufactured by Hitachi Chemical Industries, Ltd.) to the film A so that the thickness was 160 µm or more at 70°C, and punching with a diameter of 9 mmφ. The measurement was performed by raising the temperature at a temperature increase rate of 5°C/min while imparting 5% distortion to the measurement sample, and the value at 80°C was made into a shear viscosity of 80°C. The shear viscosity at 80° C. of Film A was 2000 Pa·s.

(Measurement of storage modulus of film A after curing)

The storage modulus was measured using a dynamic viscoelasticity measuring device (manufactured by Rheology Co., Ltd., brand name: DVE Reospectra). For the measurement sample, a die-bonding film (manufactured by Hitachi Chemical Co., Ltd.) was adhered to the film A so that the thickness was 160 µm or more at 70°C, and processed into a 4 mm wide strip, and a differential scanning calorimeter (DSC ) Was produced by curing under the conditions that the reaction rate became 100%. The produced measurement sample was measured for storage modulus from room temperature to 270°C at a heating rate of 10°C/min, and the value at 150°C was taken as the storage modulus at 150°C after curing. The storage modulus of film A at 150° C. after curing was 54 MPa.

(Production of film B)

Except having changed the adhesive varnish of Synthesis Example A to the adhesive varnish of Synthesis Example B, it carried out similarly to the production of Film A, and obtained the film B. In this film B, a film B-120 having a thickness of 120 µm was produced. The shear viscosity of the film B at 80°C was 1200 Pa·s, and the storage modulus at 150°C after curing of the film B was 31 MPa.

(Production of Film C)

Except having changed the adhesive varnish of Synthesis Example A to the adhesive varnish of Synthesis Example C, it carried out similarly to the production of Film A, and obtained the film C. In this film C, a film C-120 having a thickness of 120 µm was produced. The shear viscosity of the film C at 80°C was 9000 Pa·s, and the storage modulus at 150°C after curing of the film C was 160 MPa.

(Production of Film D)

Except having changed the adhesive varnish of Synthesis Example A to the adhesive varnish of Synthesis D, it carried out similarly to the production of Film A, and obtained the film D. In this film D, the application amount of the adhesive varnish was adjusted to produce a film having a different thickness. Films having a thickness of 10 µm, 20 µm, and 40 µm were set as films D-10, D-20, and D-40, respectively. The shear viscosity of the film D was 28000 Pa·s, and the storage modulus at 150° C. after curing of the film D was 6 MPa.

(Production of Film E)

Except having changed the adhesive varnish of Synthesis Example A to the adhesive varnish of Synthesis Example E, it carried out similarly to the production of Film A, and obtained the film E. In this film E, a film E-10 having a thickness of 10 μm was produced. The shear viscosity of the film E at 80°C was 7400 Pa·s, and the storage modulus at 150°C after curing of the film E was 760 MPa.

(Production of Film F)

Except having changed the adhesive varnish of Synthesis Example A to the adhesive varnish of Synthesis Example F, it carried out similarly to the production of Film A, and obtained the film F. In this film F, a film F-20 having a thickness of 20 µm was produced. The shear viscosity of the film F at 80°C was 14200 Pa·s, and the storage modulus at 150°C after curing of the film F was 20 MPa.

<Production of adhesive film>

[Examples 1-1 to 1-8 and Comparative Examples 1-1 to 1-3]

As shown in Table 2, Table 3, and Table 4, films A-F were used as a 1st film or a 2nd film. The adhesive film was obtained by bonding the 1st film and the 2nd film and processing it into a circle. On the side opposite to the second film of the first film, an adhesive film (thickness 110 μm, manufactured by Hitachi Chemical Industries, Ltd.) was affixed, and Examples 1-1 to 1-8 and Comparative Examples 1-1 to The dicing-die bonding integral adhesive film of 1-3 was produced.

<Production of semiconductor device>

[Example 2-1]

(Production of semiconductor substrate with first semiconductor chip)

A dicing-die bonding integral adhesive film (adhesive film: thickness 10 µm, film E-10, adhesive film: thickness 110 µm, manufactured by Hitachi Chemical Co., Ltd.) was prepared with an adhesive film and an adhesive film. A semiconductor wafer having a thickness of 50 µm was laminated to the adhesive film at a stage temperature of 70°C to prepare a dicing sample.

The obtained dicing sample was cut using a full-auto dicer DFD-6361 (manufactured by Disco Corporation). The cutting was performed by a step-cut method using two blades, and dicing blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by Disco Corporation) were used. Cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm/sec, and a chip size of 3 mm x 3 mm. In the cutting, the first step was cut so that the semiconductor wafer remains about 25 µm, and then the second step was cut so that a cut of about 20 µm enters the adhesive film.

Next, a semiconductor chip to be picked up was picked up as a first semiconductor chip (controller chip) using a pickup collet. Fig. 19 is a diagram showing a raised surface of a pickup collet. As shown in Fig. 19, the used pickup collet 20 has, for example, a 3 mm x 3 mm push-up surface 21, and five push pins 22 are diagonal of the push-up surface 21 They are arranged at predetermined intervals along the top. In the pickup, it was pushed up using one central pin. As for the pickup conditions, the pushing speed was set to 20 mm/s, and the pushing height was set to 450 µm. In this way, the 1st semiconductor chip (controller chip) with an adhesive film was obtained.

Next, the first semiconductor chip with an adhesive film was press-bonded to a glass epoxy substrate having a dummy circuit using a die bonder BESTEM-D02 (manufactured by Canon Machinery Co., Ltd.). At this time, the position was adjusted so that the first semiconductor chip became the center of the dummy circuit. In this way, a semiconductor substrate provided with the first semiconductor chip was obtained.

(Production of the second semiconductor chip with adhesive film)

The dicing-die bonding integrated adhesive film of Example 1-1 was prepared, and a semiconductor wafer (silicon wafer) having a thickness of 100 μm was laminated on the side opposite to the first film of the second film at a stage temperature of 70°C. , To prepare a dicing sample.

The obtained dicing sample was cut using a full-auto dicer DFD-6361 (manufactured by Disco Corporation). The cutting was carried out by a step-cut method using two blades, and dicing blades ZH05-SD2000-N1-xx-FF and ZH05-SD2000-N1-xx-EE (both manufactured by Disco Corporation) were used. Cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm/s, and a chip size of 7 mm x 7 mm. The cutting was carried out in a first step so that the semiconductor wafer remains about 50 µm, and then cut in a second step so that a cut of about 20 µm enters the adhesive film.

Next, a semiconductor chip was picked up using a pickup collet. A second semiconductor chip with an adhesive film was obtained in the same manner as the pickup conditions for the first semiconductor chip except for pushing up using five push pins.

(Manufacture of semiconductor devices)

The semiconductor substrate provided with the 1st semiconductor chip was press-bonded to the obtained 2nd semiconductor chip with an adhesive film. At this time, the position was adjusted so that the second semiconductor chip became the center of the first semiconductor chip. Subsequently, the semiconductor substrate to which the second semiconductor chip was pressed was held at a temperature of 70° C. for 2 hours by a pressurizing oven (manufactured by Chiyoda Electric Co., Ltd.), and further maintained at a temperature of 150° C. for 30 minutes to cure the adhesive film. By doing this, the semiconductor device of Example 2-1 was produced.

(Measurement of warpage)

<The amount of warpage of the semiconductor substrate>

The surface of the semiconductor substrate of the semiconductor device of Example 2-1 (the back surface of the second semiconductor chip) was placed at room temperature (25°C), and a laser displacement meter (manufactured by KK, LKG80, step 100 µm, measurement range 7 mm long. , Width 7 mm). The three-dimensional average plane was calculated from the obtained displacement of each point, and the points at both ends were corrected to be zero. The largest difference between the obtained zero point and the displacement obtained by measurement was taken as the warpage amount, and the warpage amount of the semiconductor substrate was determined. Table 5 shows the results.

<The amount of warpage of the second semiconductor chip>

The surface of the semiconductor wafer of the second semiconductor chip of the semiconductor device of Example 2-1 was placed under room temperature (25°C), and a laser displacement meter (manufactured by Co., Ltd., LKG80, step 100 μm, measuring range 7 mm long, 7 horizontally mm). The three-dimensional average plane was calculated from the obtained displacement of each point, and the points at both ends were corrected to be zero. The largest difference between the obtained zero point and the displacement obtained by measurement was taken as the warpage amount, and the warpage amount of the second semiconductor chip was determined. Table 5 shows the results.

[Examples 2-2 to 2-6]

Examples in the same manner as in Example 2-1, except that the dicing-die bonding integrated adhesive film of Example 1-1 was changed to the dicing-die bonding integrated adhesive film of Examples 1-2 to 1-6. The semiconductor devices of 2-2 to 2-6 were fabricated, respectively, and the warpage amount of the semiconductor substrate and the warpage amount of the second semiconductor chip were determined. The results are shown in Tables 5, 6 and 7.

[Comparative Example 2-1]

Except for changing the dicing-die bonding integrated adhesive film of Example 1-1 to the dicing-die bonding integrated adhesive film of Comparative Example 1-1, in the same manner as in Example 2-1, Comparative Example 2-1 A semiconductor device was fabricated, and the warpage amount of the semiconductor substrate and the warpage amount of the second semiconductor chip were determined. The results are shown in Tables 5 and 6.

In the semiconductor devices of Examples 2-1 to 2-6, warpage of the semiconductor substrate was suppressed compared to the semiconductor device of Comparative Example 2-1, and further, warpage of the second semiconductor chip was suppressed. In addition, it was possible to reduce the amount of warpage as the shear viscosity of the first film was lower. It is considered that this is because the embedding property of the first semiconductor chip is improved, so that voids around this chip can be reduced, and warpage resulting from voids can be suppressed.

<Production of semiconductor device>

[Example 2-7]

(Production of semiconductor chip with adhesive film)

A dicing-die bonding integral adhesive film of Example 1-7 was prepared, and a semiconductor wafer (silicon wafer) having a thickness of 100 μm was laminated on the surface of the second film opposite to the first film at a stage temperature of 70°C. Thus, a dicing sample was produced.

The obtained dicing sample was cut using a full-auto dicer DFD-6361 (manufactured by Disco Corporation). The cutting was carried out by a step-cut method using two blades, and dicing blades ZH05-SD2000-N1-xx-FF and ZH05-SD2000-N1-xx-EE (both manufactured by Disco Corporation) were used. Cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm/s, and a chip size of 7 mm x 7 mm. The cutting was carried out in a first step so that the semiconductor wafer remains about 50 µm, and then cut in a second step so that a cut of about 20 µm enters the adhesive film.

Next, a semiconductor chip was picked up using a pickup collet. A semiconductor chip with an adhesive film was obtained in the same manner as the pickup conditions of the first semiconductor chip except for pushing up using five pins.

The obtained semiconductor chip with an adhesive film was press-bonded to a glass epoxy substrate having a dummy circuit. At this time, the position was adjusted so that the semiconductor chip would become the center of the dummy circuit. Subsequently, the glass epoxy substrate to which the semiconductor chip was pressed was held at a temperature of 70° C. for 2 hours by a pressurizing oven (manufactured by Chiyoda Electric Co., Ltd.), and further maintained at a temperature of 150° C. for 30 minutes to cure the adhesive film. , The semiconductor device of Example 2-7 was produced.

(Measurement of warpage)

The amount of warpage of the semiconductor substrate was determined by the same method as the amount of warpage of the semiconductor substrate. The results are shown in Table 8.

[Example 2-8 and Comparative Examples 2-2 and 2-3]

Example 2-7, except that the dicing-die bonding integrated adhesive film of Example 1-7 was changed to the dicing-die bonding integrated adhesive film of Examples 1-8 and Comparative Examples 1-2 and 1-3. In the same manner, the semiconductor devices of Example 2-8 and Comparative Examples 2-2 and 2-3 were produced, respectively, and the amount of warpage of the semiconductor substrate was determined. The results are shown in Table 8.

In the semiconductor devices of Examples 2-7 and 2-8, warpage of the semiconductor substrate was suppressed as compared with the semiconductor devices of Comparative Examples 2-2 and 2-3.

From the above, it was confirmed that the method for manufacturing a semiconductor device of the present invention can suppress the warpage of the semiconductor substrate.

1: base film
2: adhesive film
4a, 4b: base film
5: suction collet
6: semiconductor substrate
10: semiconductor substrate
11: wire
12: sealing material
13: terminal
14: circuit pattern
20: collet for pickup
21: push up side
22: push pin
100, 110, 120: film
130: adhesive film
130c: cured product
140: dicing-die bonding integral adhesive film
200: adhesive sheet
300: semiconductor wafer with adhesive film
400: semiconductor device
410: semiconductor device
500: semiconductor device
A: Semiconductor wafer
B: blade
a: semiconductor chip.

Claims (10)

A step of preparing a semiconductor wafer with an adhesive film having an adhesive film and a semiconductor wafer on the adhesive film in this order,
A dicing step of dicing the semiconductor wafer with an adhesive film to obtain a semiconductor chip with an adhesive film,
A pressing process of compressing the semiconductor chip with the adhesive film onto a semiconductor substrate
And,
The adhesive film includes a first film and a second film having a shear viscosity of 80° C. different from that of the first film in this order from the adhesive film,
The method for manufacturing a semiconductor device, wherein the second film has a shear viscosity of at least 500 Pa·s at 80°C. The method for manufacturing a semiconductor device according to claim 1, wherein the second film has a thickness of 3 to 150 µm. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the second film has a storage modulus at 150°C after curing of 1000 MPa or less. The semiconductor device according to any one of claims 1 to 3, wherein the first semiconductor chip is wire-bonded to the semiconductor substrate through the first wire, and the second semiconductor chip is on the first semiconductor chip. A method for manufacturing a semiconductor device, which is a wire-embedded semiconductor device in which at least a part of the first wire is embedded in the adhesive film by being compressed through the adhesive film. The semiconductor device according to any one of claims 1 to 3, wherein the first semiconductor chip is wire-bonded to the semiconductor substrate through the first wire, and the second semiconductor chip is on the first semiconductor chip. A method of manufacturing a semiconductor device, wherein the first wire and the first semiconductor chip are embedded in the adhesive film by pressing through the adhesive film. The first film,
A second film laminated on the first film and having a shear viscosity of 80° C. different from the first film
Including,
An adhesive film having a shear viscosity of 80° C. of the second film of 500 Pa·s or more. The adhesive film according to claim 6, wherein the second film has a thickness of 3 to 150 µm. The adhesive film according to claim 6 or 7, wherein the second film has a storage modulus at 150°C after curing of 1000 MPa or less. The semiconductor according to any one of claims 6 to 8, wherein the first semiconductor chip is wire-bonded to the semiconductor substrate through a first wire, and a second semiconductor chip is pressed onto the first semiconductor chip. In an apparatus, an adhesive film used for pressing the second semiconductor chip and filling at least a part of the first wire. The semiconductor according to any one of claims 6 to 8, wherein the first semiconductor chip is wire-bonded to the semiconductor substrate through a first wire, and a second semiconductor chip is pressed onto the first semiconductor chip. In an apparatus, an adhesive film used for pressing the second semiconductor chip and burying the first wire and the first semiconductor chip.

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