WO2022163465A1

WO2022163465A1 - Semiconductor device, method for producing same, thermosetting resin composition, bonding film and integrated dicing/die bonding film

Info

Publication number: WO2022163465A1
Application number: PCT/JP2022/001802
Authority: WO
Inventors: 裕貴橋本; 和弘山本; 由衣國土
Original assignee: 昭和電工マテリアルズ株式会社
Priority date: 2021-01-28
Filing date: 2022-01-19
Publication date: 2022-08-04
Also published as: CN116762169A; JP2022115581A; TW202231809A

Abstract

A thermosetting resin composition which is used for the production of a chip embedded semiconductor device, and which contains a curing agent that has a hydroxyl equivalent of 150 g/eq or less, while having a melt viscosity of 1,000 to 11,500 Pa·s at 120°C.

Description

Semiconductor device and manufacturing method thereof, thermosetting resin composition, adhesive film and integrated dicing/die bonding film

The present disclosure relates to a semiconductor device and its manufacturing method, as well as a thermosetting resin composition, an adhesive film, and a dicing/die bonding integrated film.

With the multi-functionalization of devices such as mobile phones, stacked MCPs (Multi Chip Packages), which have increased capacity by stacking semiconductor elements in multiple stages, are becoming popular. Film adhesives are widely used for mounting semiconductor elements. A wire-embedded package is an example of a multi-layered package using a film-like adhesive. This package is manufactured through a process of embedding the semiconductor element and wires in the film-like adhesive by pressing the film-like adhesive against the wire-bonded semiconductor element on the substrate.

Connection reliability is one of the important characteristics required for semiconductor devices such as the stacked MCP. In order to improve connection reliability, film adhesives are being developed in consideration of properties such as heat resistance, moisture resistance and reflow resistance. For example, Patent Document 1 discloses an adhesive sheet with a thickness of 10-250 μm containing a thermosetting component and a filler. Patent Document 2 discloses an adhesive composition comprising a mixture comprising an epoxy resin and a phenolic resin and an acrylic copolymer.

　The connection reliability of a semiconductor device is greatly affected by whether or not the semiconductor element can be mounted without creating voids on the bonding surface. For this reason, a film-like adhesive with high fluidity is used so that the semiconductor element can be pressure-bonded without generating voids, or a film adhesive with a low melt viscosity is used so that the generated voids can be eliminated in the sealing process of the semiconductor element. Ingenuity such as using a film-like adhesive has been made. For example, Patent Document 3 discloses an adhesive sheet with low viscosity and low tack strength.

WO2005/103180 JP-A-2002-220576 JP 2009-120830 A

The adhesive sheets of Patent Documents 1 and 3 contain a relatively large amount of epoxy resin for the purpose of high fluidity in order to embed wires during crimping. For this reason, thermal curing is likely to proceed due to heat generated during the manufacturing process of the semiconductor device. As a result, the adhesive film becomes highly elastic, in other words, the adhesive sheet is less likely to deform even under high temperature and high pressure conditions during sealing, and the voids formed during pressure bonding may not eventually disappear. On the other hand, since the adhesive composition of Patent Document 2 has a low elastic modulus, it is possible to eliminate voids in the sealing process, but due to its high viscosity, it is difficult to embed the wire during crimping. likely to be sufficient.

In recent years, increasing the operation speed of wire-embedded semiconductor devices has been emphasized. Conventionally, a controller chip for controlling the operation of a semiconductor device has been arranged on the uppermost layer of stacked semiconductor elements. In order to realize high-speed operation, a semiconductor device package technology has been developed in which a controller chip is arranged at the bottom. As one form of such a package, a relatively thick adhesive film (film-like adhesive) is used when pressure-bonding the semiconductor element in the second layer among the semiconductor elements stacked in multiple layers, and the inside of the adhesive film is A package in which a controller chip is embedded in a package is attracting attention (for example, see Patent Document 1 above). The adhesive film used for such applications is called FOD (Film Over Die), and is a high adhesive film capable of embedding the wires connecting the controller chip and the circuit pattern, as well as the unevenness caused by the unevenness of the substrate surface. Liquidity is required. This problem can be solved by using a high-fluidity adhesive sheet such as the adhesive sheets of US Pat.

However, while the adhesive sheets described in Patent Documents 1 and 3 exhibit high fluidity before curing, as the size of semiconductor elements (chips) continues to become smaller, in the thermocompression bonding process in the manufacturing process of semiconductor packages, , the pressing force per unit area tends to be excessively large. As a result, there is a risk that the adhesive composition constituting the adhesive film will protrude from the semiconductor element (hereinafter referred to as "bleeding"), or that the adhesive film will be excessively crushed to cause electrical failure. In particular, if the fluidity in the thermocompression bonding process is increased in order to improve the embedding properties of the adhesive film used in the manufacture of chip-embedded semiconductor packages, bleeding becomes noticeable. For example, the adhesive composition that squeezes out may climb up to the top surface of the semiconductor device, which can cause electrical failures or wire bonding failures. In other words, conventional adhesive films cannot always achieve both excellent embeddability in a semiconductor element and suppression of bleeding in the process of manufacturing a chip-embedded package, and there is room for improvement in this respect. there were.

The present disclosure is a thermosetting resin composition useful for manufacturing chip-embedded semiconductor devices, which is excellent in embedding properties of semiconductor elements and capable of sufficiently suppressing the occurrence of bleeding. I will provide a. The present disclosure provides a semiconductor device having excellent connection reliability, a method for manufacturing the same, and an adhesive film and a dicing/die bonding integrated film using the thermosetting resin composition.

In order to solve the above problems, the present inventors have extensively studied the selection of the resin of the thermosetting resin composition used in the manufacture of semiconductor devices and the adjustment of physical properties. The present inventors have found that by using a curing agent having a hydroxyl equivalent of 150 g/eq or less, a resin having a high crosslink density can be obtained, while excellent embeddability can be obtained by adjusting the melt viscosity of the thermosetting resin composition. It has been found that it has and can sufficiently suppress bleeding.

A method for manufacturing a semiconductor device according to the present disclosure comprises: (A) a step of preparing a member including a substrate and a first semiconductor element placed on the substrate; (C) adhering the first semiconductor element to the substrate such that the first semiconductor element is embedded in the adhesive piece; and (D) curing the adhesive piece by heating, wherein the thermosetting resin composition contains a curing agent having a hydroxyl equivalent of 150 g/eq or less, It has a melt viscosity of 1000 to 11500 Pa·s.

By including a curing agent with a hydroxyl equivalent of 150 g/eq or less in the adhesive piece made of the thermosetting resin composition, as described above, the resin can have a high crosslink density and bleeding can be suppressed. On the other hand, when the melt viscosity at 120° C. is 1000 to 11500 Pa·s, excellent embeddability can be ensured. The melt viscosity of the thermosetting resin composition can be made within the above range by adjusting the blending ratio of the components constituting the thermosetting resin composition. According to the studies of the present inventors, the melt viscosity of the thermosetting resin composition is a factor that affects both the embedding property and the suppression of bleeding. It is a factor that affects inhibition.

A semiconductor device according to the present disclosure includes a substrate, a first semiconductor element provided on the substrate, and a region of the substrate where the first semiconductor element is arranged. and the surface of the cured adhesive piece opposite to the substrate side, and is larger than the first semiconductor element in plan view and a second semiconductor element having an area, wherein the adhesive piece is made of a thermosetting resin composition containing a curing agent having a hydroxyl equivalent of 150 g/eq or less and having a melt viscosity of 1000 to 11500 Pa s at 120 ° C. Become.

The above semiconductor device has a mode in which the first semiconductor element (for example, a controller chip) is embedded in the cured product of the thermosetting resin composition, and can operate at high speed. By using an adhesive piece having a melt viscosity of 1000 to 11500 Pa·s at 120° C. for embedding the first semiconductor element, there are sufficiently few gaps at the interface with the substrate or the first semiconductor element. , the occurrence of the problems of contamination and bleeding of the substrate is sufficiently suppressed, so that excellent connection reliability between the substrate and the first semiconductor element can be achieved.

The thermosetting resin composition in the present disclosure may contain a high molecular weight component (for example, acrylic rubber) with a molecular weight of 100,000 to 1,000,000 from the viewpoint of adjusting the melt viscosity at 120°C. The content of the high molecular weight component is, for example, 25 to 45 parts by mass with respect to 100 parts by mass of the resin component contained in the thermosetting resin composition. When the content of the high-molecular-weight component is 25 parts by mass or more, it is easy to suppress bleeding to a higher degree. In addition, the molecular weight of a high molecular weight component means a weight average molecular weight. The weight average molecular weight means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.

The thermosetting resin composition may contain an inorganic filler. The content of the inorganic filler is 5 to 50% by mass based on the total mass of the thermosetting resin composition. When the content of the inorganic filler is 5% by mass or more, it is easy to suppress bleeding to a higher degree, and when it is 50% by mass or less, it is easy to achieve more excellent embeddability.

The adhesive film according to the present disclosure is used for manufacturing chip-embedded semiconductor devices, and is made of the above thermosetting resin composition. A dicing/die bonding integrated film according to the present disclosure includes an adhesive layer and the adhesive film.

According to the present disclosure, a thermosetting resin composition useful for manufacturing a chip-embedded semiconductor device is a thermosetting resin that is excellent in the embedding property of a semiconductor element and can sufficiently suppress the occurrence of bleeding. A composition is provided. That is, this thermosetting resin composition has excellent embedding properties for semiconductor elements (eg, controller chips), and sufficiently suppresses problems caused by contamination of peripheral circuits and excessive flow of resin during embedding. can. Further, according to the present disclosure, there are provided a semiconductor device having excellent connection reliability, a method for manufacturing the same, and an adhesive film and a dicing/die bonding integrated film using the thermosetting resin composition.

FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device. FIG. 2 is a cross-sectional view schematically showing an example of a semiconductor element with an adhesive piece comprising an adhesive film and a second semiconductor element. 3A to 3C are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 4A to 4D are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 5A to 5D are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 6A to 6C are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 7(a) to 7(e) are cross-sectional views schematically showing the process of manufacturing a laminate composed of an adhesive piece and a second semiconductor element.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means acrylate or its corresponding methacrylate. "A or B" may include either A or B, or may include both.

In this specification, the term "layer" includes not only a shape structure formed over the entire surface but also a shape structure formed partially when observed as a plan view. In addition, the term "step" as used herein refers not only to an independent step, but also to the term if the desired action of the step is achieved even if it cannot be clearly distinguished from other steps. included. Further, a numerical range indicated using "-" indicates a range including the numerical values described before and after "-" as the minimum and maximum values, respectively.

In the present specification, the content of each component in the composition refers to the total amount of the multiple substances present in the composition when there are multiple substances corresponding to each component in the composition, unless otherwise specified. means. In addition, unless otherwise specified, the exemplified materials may be used alone, or two or more of them may be used in combination. In addition, in the numerical ranges described stepwise in this specification, the upper limit or lower limit of the numerical range at one stage may be replaced with the upper limit or lower limit of the numerical range at another stage. Moreover, in the numerical ranges described in this specification, the upper and lower limits of the numerical ranges may be replaced with the values shown in the examples.

[Semiconductor device]
FIG. 1 is a cross-sectional view schematically showing a semiconductor device according to this embodiment. The semiconductor device 100 shown in this figure includes a substrate 10, a first semiconductor element Wa arranged on the surface of the substrate 10, and a cured adhesive piece 20 sealing the first semiconductor element Wa. , a second semiconductor element Wb disposed above the first semiconductor element Wa, and a sealing layer 40 sealing the second semiconductor element Wb.

The substrate 10 has

circuit patterns

10a and 10b on its surface. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 to 180 μm, and may be 90 to 140 μm. The substrate 10 may be an organic substrate or a metal substrate such as a lead frame.

In this embodiment, the first semiconductor element Wa is a controller chip for driving the semiconductor device 100 . The first semiconductor element Wa is adhered onto the circuit pattern 10a via an adhesive 15, and is connected via the first wire 11 to the circuit pattern 10b. The shape of the first semiconductor element Wa in plan view is, for example, a rectangle (square or rectangle). The length of one side of the first semiconductor element Wa is, for example, 5 mm or less, and may be 2 to 4 mm or 1 to 4 mm. The thickness of the first semiconductor element Wa is, for example, 10 to 150 μm, and may be 20 to 100 μm.

In plan view, the second semiconductor element Wb has a larger area than the first semiconductor element Wa. The second semiconductor element Wb is mounted on the substrate 10 via a cured adhesive piece 20 so that the entire first semiconductor element Wa and part of the circuit pattern 10b are covered. The shape of the second semiconductor element Wb in plan view is, for example, a rectangle (square or rectangle). The length of one side of the second semiconductor element Wb is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the second semiconductor element Wb is, for example, 10-170 μm, and may be 20-120 μm. The second semiconductor element Wb is connected to the circuit pattern 10b via the second wire 12 and sealed with the sealing layer 40 .

The cured adhesive piece 20 is the cured adhesive piece 20P (see FIG. 2). Note that, as shown in FIG. 2, the adhesive piece 20P and the second semiconductor element Wb are substantially the same size. A semiconductor element 30 with an adhesive piece shown in FIG. 2 is composed of an adhesive piece 20P and a second semiconductor element Wb. The semiconductor element 30 with an adhesive piece is produced through a dicing process and a pick-up process, as described later (see FIG. 7).

[Method for manufacturing a semiconductor device]
A method for manufacturing the semiconductor device 100 will be described. First, the structure 50 (member) shown in FIG. 3 is manufactured. That is, the first semiconductor element Wa is placed on the surface of the substrate 10 with the adhesive 15 interposed therebetween. After that, the first semiconductor element Wa and the circuit pattern 10b are electrically connected with the first wire 11. Next, as shown in FIG.

Next, as shown in FIG. 4, the adhesive piece 20P of the separately prepared semiconductor element 30 with an adhesive piece is pressed against the substrate 10. Then, as shown in FIG. As a result, the first semiconductor element Wa and the first wires 11 are embedded in the adhesive piece 20P. The thickness of the adhesive piece 20P may be appropriately set according to the thickness of the first semiconductor element Wa and the like. good too. By setting the thickness of the adhesive piece 20P within the above range, a sufficient distance (distance G in FIG. 5) between the first semiconductor element Wa and the second semiconductor element Wb can be ensured. The distance G is, for example, preferably 50 μm or more, and may be 50-75 μm or 50-80 μm.

The pressure bonding of the adhesive piece 20P to the substrate 10 is preferably performed, for example, under conditions of 80 to 180° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds.

Next, the adhesive piece 20P is cured by heating. This curing treatment is preferably carried out, for example, under conditions of 60 to 175° C. and 0.01 to 1.0 MPa for 5 minutes or longer. As a result, the first semiconductor element Wa is sealed with the cured product 20 of the adhesive piece 20P (see FIG. 6). The curing treatment of the adhesive piece 20P may be performed under a pressurized atmosphere from the viewpoint of reducing voids. After electrically connecting the second semiconductor element Wb and the circuit pattern 10b with the second wire 12, the second semiconductor element Wb is sealed with the sealing layer 40 to complete the semiconductor device 100 (FIG. 1).

[Method for producing a semiconductor element with an adhesive piece]
An example of a method for manufacturing the semiconductor element 30 with adhesive pieces shown in FIG. 2 will be described with reference to FIGS. 7(a) to 7(e). First, a dicing/die-bonding integrated film 8 (hereinafter sometimes referred to as "film 8") is arranged in a predetermined device (not shown). The film 8 comprises a substrate layer 1, an adhesive layer 2 and an adhesive layer 20A in this order. The base material layer 1 is, for example, a polyethylene terephthalate film (PET film). The semiconductor wafer W is, for example, a thin semiconductor wafer with a thickness of 10-100 μm. The semiconductor wafer W may be monocrystalline silicon, polycrystalline silicon, various ceramics, or compound semiconductors such as gallium arsenide.

As shown in FIGS. 7(a) and 7(b), the film 8 is attached to one surface of the semiconductor wafer W so that the adhesive layer 20A is in contact therewith. This step is preferably carried out at a temperature of 50-100°C, more preferably 60-80°C. When the temperature is 50° C. or higher, good adhesion between the semiconductor wafer W and the adhesive layer 20A can be obtained. be.

As shown in FIG. 7(c), the semiconductor wafer W, the adhesive layer 2 and the adhesive layer 20A are diced. As a result, the semiconductor wafer W is separated into individual semiconductor elements Wb. The adhesive layer 20A is also singulated to form adhesive pieces 20P. A dicing method includes a method using a rotary blade or a laser. In addition, the semiconductor wafer W may be thinned by grinding the semiconductor wafer W prior to the dicing of the semiconductor wafer W. FIG.

Next, when the adhesive layer 2 is, for example, a UV curable type, the adhesive layer 2 is cured by irradiating the adhesive layer 2 with ultraviolet rays, as shown in FIG. It reduces the adhesive force between pieces 20P. After the ultraviolet irradiation, as shown in FIG. 7(e), the base material layer 1 is expanded under room temperature or cooling conditions to separate the semiconductor elements Wb from each other, and the needles 42 are pushed up to adhere from the adhesive layer 2. The adhesive piece 20P of the semiconductor element 30 with the adhesive piece is peeled off, and the semiconductor element 30 with the adhesive piece is sucked by the suction collet 44 and picked up.

[Thermosetting resin composition]
The thermosetting resin composition that constitutes the adhesive piece 20P will be described. The adhesive piece 20P is obtained by dividing the adhesive layer 20A (adhesive film) into individual pieces, and both are made of the same thermosetting resin composition. This thermosetting resin composition can, for example, go through a semi-cured (B stage) state and then become a fully cured (C stage) state by a subsequent curing treatment.

The thermosetting resin composition preferably contains the following components.
(a) Thermosetting resin (hereinafter sometimes simply referred to as "(a) component")
(b) high molecular weight component (hereinafter sometimes simply referred to as "(b) component")
(c) Inorganic filler (hereinafter sometimes simply referred to as "(c) component")
In the present embodiment, when (a) the thermosetting resin contains an epoxy resin, the epoxy resin (hereinafter sometimes simply referred to as "(a1) component") corresponds to the "low molecular weight component". In this case, (a) the thermosetting resin contains a phenolic resin (hereinafter sometimes simply referred to as "(a2) component") that can be a curing agent for epoxy resins.

The thermosetting resin composition may further contain the following components.
(d) Coupling agent (hereinafter sometimes simply referred to as "(d) component")
(e) curing accelerator (hereinafter sometimes simply referred to as "(e) component")

The thermosetting resin composition preferably contains both a low molecular weight component (component (a1)) with a molecular weight of 10 to 1,000 and a high molecular weight component (component (b)) with a molecular weight of 100,000 to 1,000,000. By using these components together, the low-molecular-weight component contributes to excellent embeddability, while the high-molecular-weight component contributes to suppression of problems caused by excessive flow, such as bleeding. In addition, the molecular weight of the low molecular weight component means the molecular weight obtained from the molecular formula.

The content M1 of the low molecular weight component is preferably 20 to 45 parts by mass, more preferably 21 to 40 parts by mass, with respect to 100 parts by mass of the resin component contained in the thermosetting resin composition. . When the content M1 of the low-molecular-weight component is 20 parts by mass or more, excellent embedding properties can be easily achieved, and when it is 45 parts by mass or less, excellent pickup properties can be easily achieved. be done. The softening point of the low molecular weight component is preferably 50°C or less, and may be, for example, 10 to 30°C. As used herein, the term "softening point" means a value measured by the ring and ball method in accordance with JIS K7234-1986.

The content M2 of the high molecular weight component is preferably 25 to 45 parts by mass, more preferably 30 to 43 parts by mass, with respect to 100 parts by mass of the resin component contained in the thermosetting resin composition. . When the content M2 of the high molecular weight component is 25 parts by mass or more, problems caused by excessive flow (bleeding, substrate contamination, sink marks, warping, etc.) can be easily suppressed, and on the other hand, it is 45 parts by mass or less. , the effect of easily achieving excellent embeddability is exhibited. From the viewpoint of achieving even better embedding properties, the upper limit of the content M2 of the high molecular weight component may be 42 parts by mass, 40 parts by mass, or 39 parts by mass. The softening point of the high molecular weight component is preferably above 50°C and 100°C or less.

The total amount of the low molecular weight component and the high molecular weight component (M1+M2) is preferably 50 to 80 parts by weight, preferably 51 to 76 parts by weight, with respect to 100 parts by weight of the resin component contained in the thermosetting resin composition. It is more preferable to have When the total amount is 50 parts by mass or more, the effect of the combined use of these components tends to be sufficiently exhibited, while when the total amount is 80 parts by mass or less, excellent pickup properties are achieved. It has the effect of making it easier. The resin components contained in the thermosetting resin composition other than the low molecular weight component and the high molecular weight component mainly include thermosetting resins having a molecular weight of 1,001 to 99,000.

The melt viscosity of the thermosetting resin composition at 120°C is 1000 to 11500 Pa·s from the viewpoint of connection reliability. When the melt viscosity is 1000 Pa·s or more, the problem of contamination and bleeding of the substrate 10 during pressure bonding tends to be sufficiently suppressed. When the melt viscosity of the thermosetting resin composition at 120° C. is 11500 Pa s or less, excellent embedding properties can be achieved. can be sufficiently reduced. The melt viscosity is preferably 2,000 to 11,000 Pa·s, more preferably 3,000 to 10,000 Pa·s, still more preferably 4,000 to 9,000 Pa·s. The melt viscosity was measured using ARES (manufactured by TA Instruments) while applying a strain of 5% to the thermosetting resin composition molded into a film while increasing the temperature at a rate of 5°C/min. Means the measured value of the case.

The melt viscosity of the thermosetting resin composition at 80°C is preferably 3500 to 12500 Pa·s from the viewpoint of connection reliability. When the melt viscosity is 3500 Pa·s or more, it is possible to sufficiently suppress the occurrence of problems such as contamination and bleeding of the substrate 10 during compression bonding. On the other hand, when the melt viscosity is 12500 Pa·s or less, excellent embeddability can be achieved, and specifically, voids at the interface with the substrate 10 or the first semiconductor element Wa can be sufficiently reduced. The melt viscosity is preferably 5500 to 10500 Pa·s. The melt viscosity of the thermosetting resin composition at 120° C. and 80° C. tends to decrease as the content of the high molecular weight component decreases, and tends to decrease as the content of the inorganic filler decreases.

<(a) thermosetting resin>
Component (a1) can be used without any particular limitation as long as it has an epoxy group in its molecule. Examples of the component (a1) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin. Epoxy resins, dicyclopentadiene skeleton-containing epoxy resins, stilbene-type epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenolmethane-type epoxy resins, biphenyl-type epoxy resins, xylylene-type epoxy resins, biphenylaralkyl-type epoxy resins , naphthalene-type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (a1) may be a cresol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of heat resistance.

The epoxy equivalent of component (a1) may be 90-300 g/eq, 110-290 g/eq, or 130-280 g/eq. When the epoxy equivalent of component (a1) is within this range, there is a tendency that fluidity can be ensured while maintaining the bulk strength of the adhesive film. The term "epoxy equivalent" as used herein means a value measured by potentiometric titration in accordance with JIS K7236-2009.

The content of component (a1) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). It may be parts by mass. When the content of the component (a1) is 5 parts by mass or more, the embedding property of the adhesive film tends to be better. When the content of component (a1) is 50 parts by mass or less, the occurrence of bleeding tends to be more suppressed.

The (a2) component is a curing agent having a phenolic hydroxyl group in its molecule. The hydroxyl equivalent of component (a2) is 150 g/eq or less, and may be, for example, 50 to 150 g/eq, 60 to 140 g/eq, or 70 to 130 g/eq. When the hydroxyl equivalent of the component (a2) is 150 g/eq or less, the crosslink density of the thermosetting resin composition can be sufficiently increased, thereby sufficiently preventing bleeding even when the melt viscosity is relatively high. can be suppressed to On the other hand, when the hydroxyl equivalent of the component (a2) is 50 g/eq or more, the adhesive strength of the thermosetting resin composition tends to be maintained at a higher level. The softening point of component (a2) may be 50-140°C, 55-130°C, or 60-125°C. The "hydroxyl equivalent" referred to here means that which can be measured by the neutralization titration method described in JIS K0070.

Component (a2) includes, for example, phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and/or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene. Phenols such as novolac-type phenolic resins, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenol obtained by condensing or co-condensing a compound having an aldehyde group such as formaldehyde in the presence of an acidic catalyst and/or phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (a2) may be a phenol aralkyl resin, a naphthol aralkyl resin, or a novolak-type phenol resin from the viewpoint of hygroscopicity and heat resistance.

The content of component (a2) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). can be a department. When the content of component (a2) is 5 parts by mass or more, better curability tends to be obtained. When the content of the component (a2) is 50 parts by mass or less, the embedding property tends to be better.

The ratio of the epoxy equivalent of component (a1) to the hydroxyl equivalent of component (a2) (epoxy equivalent of component (a1)/hydroxy equivalent of component (a2)) is 0.30/0.70 from the viewpoint of curability. ~0.70/0.30, 0.35/0.65~0.65/0.35, 0.40/0.60~0.60/0.40, or 0.45/0.55~ It may be 0.55/0.45. When the corresponding amount ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the corresponding amount ratio is 0.70/0.30 or less, it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity.

<(b) High molecular weight component>
Component (b) preferably has a glass transition temperature (Tg) of 50° C. or lower. Component (b) includes, for example, acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins and modified products thereof.

The (b) component may contain an acrylic resin from the viewpoint of fluidity. Here, acrylic resin means a polymer containing structural units derived from (meth)acrylic acid ester. The acrylic resin is preferably a polymer containing, as a structural unit, a structural unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group. The acrylic resin may also be acrylic rubber such as a copolymer of (meth)acrylic acid ester and acrylonitrile.

The glass transition temperature (Tg) of the acrylic resin may be -50 to 50°C or -30 to 30°C. When the Tg of the acrylic resin is −50° C. or higher, it tends to be possible to prevent the flexibility of the adhesive composition from becoming too high. This makes it easier to cut the adhesive film during wafer dicing, making it possible to prevent the occurrence of burrs. When the Tg of the acrylic resin is 50°C or less, it tends to be possible to suppress a decrease in the flexibility of the adhesive composition. As a result, when the adhesive film is attached to the wafer, it tends to be easy to fill the voids sufficiently. Also, it is possible to prevent chipping during dicing due to deterioration in adhesion of the wafer. Here, the glass transition temperature (Tg) means a value measured using a DSC (differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).

The weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3,000,000 or 500,000 to 2,000,000. When the Mw of the acrylic resin is in such a range, it is possible to appropriately control film formability, strength in film form, flexibility, tackiness, etc., as well as excellent reflow properties and improved embedding properties. be able to. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.

Commercially available acrylic resins include, for example, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 (all manufactured by Nagase ChemteX Corporation).

The content of component (b) is 5 to 70 parts by mass, 10 to 50 parts by mass, or 15 to 30 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). It may be parts by mass. When the content of the component (b) is 5 parts by mass or more, the fluidity control during molding and the handleability at high temperatures can be further improved. If the content of the component (b) is 70 parts by mass or less, the embeddability can be further improved.

<(c) inorganic filler>
Component (c) includes, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, and boron nitride. , silica and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (c) may be silica from the viewpoint of compatibility with the resin.

The average particle diameter of component (c) may be 0.005 to 1 μm or 0.05 to 0.5 μm from the viewpoint of improving adhesiveness. Here, the average particle diameter means a value obtained by converting from the BET specific surface area.

The content of component (c) is 5 to 50 parts by mass, 15 to 45 parts by mass, or 25 to 39 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). It may be parts by mass. When the content of component (c) is 5 parts by mass or more, the fluidity of the adhesive film tends to be further improved. When the content of component (c) is 50 parts by mass or less, the dicing property of the adhesive film tends to be better.

<(d) Coupling agent>
(d) Component may be a silane coupling agent. Silane coupling agents include, for example, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, and the like. be done. You may use these individually by 1 type or in combination of 2 or more types.

The content of component (d) may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b) and (c).

<(e) Curing accelerator>
Component (e) is not particularly limited, and commonly used components can be used. Component (e) includes, for example, imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, imidazoles and derivatives thereof may be used as component (e) from the viewpoint of reactivity.

Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. You may use these individually by 1 type or in combination of 2 or more types.

The content of component (e) may be 0.01 to 1 part by mass with respect to 100 parts by mass of the total mass of components (a), (b) and (c).

[Dicing/die bonding integrated film and its manufacturing method]
The dicing/die-bonding integrated film 8 shown in FIG. 7A and its manufacturing method will be described. The method for producing the film 8 includes the steps of applying a varnish of an adhesive composition containing a solvent onto a base film (not shown), and drying the applied varnish by heating at 50 to 150° C. to form an adhesive layer 20A. and forming.

The varnish of the adhesive composition can be prepared, for example, by mixing or kneading components (a) to (c) and, if necessary, components (d) and (e) in a solvent. Mixing or kneading can be carried out by using an ordinary dispersing machine such as a stirrer, a kneading machine, a triple roll, a ball mill, or the like, and by appropriately combining these.

The solvent for preparing the varnish is not limited as long as it can uniformly dissolve, knead, or disperse the above components, and conventionally known solvents can be used. Examples of such solvents include ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene and xylene. It is preferable to use methyl ethyl ketone, cyclohexanone, etc., because of their high drying speed and low price.

The base film is not particularly limited, and examples include polyester film, polypropylene film (OPP film, etc.), polyethylene terephthalate film, polyimide film, polyetherimide film, polyethylene naphthalate film, polymethylpentene film, and the like.

As a method for applying the varnish to the substrate film, a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, and the like. . The conditions for drying by heating are not particularly limited as long as the solvent used is sufficiently volatilized. Heat drying may be carried out by stepwise raising the temperature within the range of 50 to 150°C. By volatilizing the solvent contained in the varnish by heating and drying, a laminated film of the substrate film and the adhesive layer 20A can be obtained.

The film 8 can be obtained by laminating the laminated film obtained as described above and the dicing tape (laminated body of the base layer 1 and the adhesive layer 2). Examples of the substrate layer 1 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the substrate layer 1 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc., as necessary. The adhesive layer 2 may be UV curable or pressure sensitive. The film 8 may further include a protective film (not shown) covering the adhesive layer 2 .

Although the embodiments of the present disclosure have been described in detail above, the present invention is not limited to the above embodiments. For example, in the above embodiment, the package in which the two semiconductor elements Wa and Wb are stacked is illustrated, but a third semiconductor element may be stacked above the second semiconductor element Wb, One or more semiconductor elements may be stacked thereon.

Hereinafter, the present disclosure will be described more specifically with examples. However, the present invention is not limited to the following examples.

(Examples 1 to 5 and Comparative Examples 1 to 3)
Varnishes (8 types in total) containing the components shown in Tables 1 and 2 were prepared as follows. That is, cyclohexanone was added to a composition containing an epoxy resin, a phenol resin, and an inorganic filler, and the mixture was stirred. After the acrylic rubber was added and stirred, a coupling agent and a curing accelerator were further added, and the mixture was stirred until each component was sufficiently uniform to obtain a varnish.

The components listed in Tables 1 and 2 are as follows.
(Epoxy resin)
・ YDF-8170C (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent: 159 g / eq, liquid at room temperature)
・N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolak type epoxy resin, epoxy equivalent: 204 g / eq, softening point: 75 to 85 ° C.)
(Phenolic resin)
・ PSM-4326 (trade name, manufactured by Gun Ei Chemical Industry Co., Ltd., phenol novolac type phenol resin, hydroxyl equivalent: 105 g / eq, softening point: 120 ° C.)
・ MEH-7800M (trade name, manufactured by Meiwa Chemical Co., Ltd., phenylaralkyl-type phenol resin, hydroxyl equivalent: 174 g / eq, softening point: 80 ° C.)
(acrylic rubber)
SG-P3 solvent change product (SG-P3 (trade name) solvent changed to cyclohexanone, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ° C.)
(Inorganic filler)
・ SC2050-HLG (trade name): manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 μm
(Curing accelerator)
・Curesol 2PZ-CN (trade name): 1-cyanoethyl-2-phenylimidazole manufactured by Shikoku Chemical Industry Co., Ltd.

The varnish containing the above ingredients was filtered through a 100-mesh filter and vacuum defoamed. The varnish after vacuum defoaming was applied onto a release-treated polyethylene terephthalate (PET) film (thickness: 38 μm). The applied varnish was dried by heating in two steps, 90° C. for 5 minutes and then 140° C. for 5 minutes. In this way, an adhesive sheet comprising a PET film as a base film and an adhesive film (thickness of 60 μm) in a B-stage state was obtained.

<Measurement of melt viscosity of adhesive film>
The melt viscosity of the adhesive film at 100°C and 120°C was measured by the following method. That is, five adhesive films each having a thickness of 60 μm were laminated to obtain a thickness of 300 μm, which was then punched into a size of 10 mm×10 mm to obtain a sample for measurement. A circular aluminum plate jig with a diameter of 8 mm was set in a dynamic viscoelasticity device ARES (manufactured by TA Instruments), and the sample was further set thereon. After that, measurements were taken while the temperature was raised to 130°C at a heating rate of 5°C/min while applying a strain of 5% at 35°C, and the melt viscosity values at 80°C and 120°C were recorded. Tables 3 and 4 show the results.

<Evaluation of adhesive film>
The following items were evaluated for the adhesive film.
(1) Embedability The embeddability of the adhesive film was evaluated by the following method.
(Preparation of semiconductor element with first adhesive piece)
Semiconductor wafer (diameter: 8 inches, thickness: 50 μm) Dicing / die bonding integrated film HR-9004-10 (manufactured by Showa Denko Materials Co., Ltd., adhesive layer thickness 10 μm, adhesive layer thickness 110 μm) pasted. By dicing this, a semiconductor element with a first adhesive piece, which consists of a first semiconductor element (controller chip, size: 3.0 mm×3.0 mm) and a first adhesive piece, was obtained.
(Preparation of semiconductor element with second adhesive piece)
A dicing/die-bonding integrated film comprising each adhesive film (thickness: 120 μm) according to Examples and Comparative Examples and an adhesive film for dicing was produced. This was attached to a semiconductor wafer (diameter: 8 inches, thickness: 50 μm). By dicing this, a semiconductor element with a second adhesive piece, which consists of a second semiconductor element (size: 7.5 mm×7.5 mm) and a second adhesive piece, was obtained.
(Adhesion of first and second semiconductor elements)
A substrate (surface unevenness: maximum 6 μm) was prepared for pressure bonding of the first and second semiconductor elements. After pressing the first semiconductor element to this substrate via the first adhesive piece under the conditions of 130° C., 0.20 MPa, and 2 seconds, the first adhesive was applied by heating at 120° C. for 2 hours. The pieces were semi-cured.
Next, the second semiconductor element was crimped under the conditions of 130° C., 0.20 MPa, and 2 seconds via the second adhesive piece to be evaluated so as to cover the first semiconductor element. At this time, alignment was performed so that the center positions of the first semiconductor element and the second semiconductor element, which had been pressure-bonded earlier, were aligned in a plan view.
The structure obtained as described above was placed in a pressure oven, heated from 35° C. to 170° C. at a rate of 3° C./min, and heated at 170° C. for 30 minutes. The implantability was confirmed by analyzing the heat-treated structure with an ultrasonic imaging device SAT (manufactured by Hitachi Power Solutions Co., Ltd., product number FS200II, probe: 25 MHz). Evaluation was performed according to the following criteria. Tables 3 and 4 show the results.
A: The area ratio of voids in a given cross section is less than 5%.
B: The area ratio of voids in a predetermined cross section is 5% or more.

(2) Presence or Absence of Package Contamination Presence or absence of contamination was confirmed by observing the top and side surfaces of the structure subjected to evaluation of embeddability with a microscope.
(3) Evaluation of Bleeding The protruding length of the adhesive (second adhesive piece) from the center of the four sides of the second semiconductor element in the structure subjected to embedding evaluation was measured under a microscope. , and the average value thereof was taken as the amount of bleeding. Evaluation was performed according to the following criteria. Tables 3 and 4 show the results.
A: The bleeding amount is less than 60 μm.
B: The bleeding amount is 60 μm or more and 100 μm or less.
C: The amount of bleeding is greater than 100 μm.

(4) Measurement of Adhesive Strength The adhesive strength (die shear strength) of cured adhesive films according to Examples and Comparative Examples was measured by the following method. First, each adhesive film (120 μm thick) according to Examples and Comparative Examples was attached to a semiconductor wafer (400 μm thick) at 70°C. By dicing this, a semiconductor element with an adhesive piece, which consists of a semiconductor element (size: 5 mm×5 mm) and an adhesive piece, was obtained. On the other hand, a substrate having a surface coated with a solder resist ink (AUS308) was prepared. A semiconductor element was press-bonded to this surface via an adhesive piece under conditions of 120° C., 0.1 MPa, and 5 seconds. After that, it was heat-treated at 110° C. for 1 hour, and further heated at 170° C. for 3 hours to cure the adhesive piece, thereby obtaining a sample for measurement. This sample was left under conditions of 85° C. and 60% RH for 168 hours. After that, the sample was allowed to stand under conditions of 25° C. and 50% RH for 30 minutes, and then the die shear strength was measured at 250° C., which was defined as the adhesive strength. A Universal Bond Tester Series 4000 manufactured by Dage was used to measure the die shear strength. Tables 3 and 4 show the results.

As is clear from the results shown in Tables 3 and 4, the adhesive films of Examples 1 to 5 have excellent embeddability after treatment in a pressure oven, compared to the adhesive films of Comparative Examples 1 to 3. It was also confirmed that package contamination and bleeding can be suppressed.

DESCRIPTION OF SYMBOLS 1... Base material layer, 2... Adhesive layer, 8... Die-bonding integrated film, 10... Substrate, 10a, 10b... Circuit pattern, 11... First wire, 12... Second wire, 20... Adhesive piece Cured product 20A Adhesive layer (adhesive film) 20P Adhesive piece 30 Semiconductor element with adhesive piece 40 Encapsulation layer 50 Structure 100 Semiconductor device W Semiconductor wafer Wa . 1 semiconductor element, Wb ... the second semiconductor element

Claims

(A) preparing a member comprising a substrate and a first semiconductor element placed on the substrate;
(B) preparing a semiconductor element with an adhesive piece, which is a laminate including an adhesive piece made of a thermosetting resin composition and a second semiconductor element;
(C) pressing the semiconductor element with the adhesive piece to the substrate so that the first semiconductor element is embedded in the adhesive piece;
(D) curing the adhesive strip by heating;
including
The method for manufacturing a semiconductor device, wherein the thermosetting resin composition contains a curing agent having a hydroxyl equivalent of 150 g/eq or less and has a melt viscosity of 1000 to 11500 Pa·s at 120°C.
The thermosetting resin composition contains a high molecular weight component with a molecular weight of 100,000 to 1,000,000,
2. The method of manufacturing a semiconductor device according to claim 1, wherein the content of said high molecular weight component is 25 to 45 parts by mass with respect to 100 parts by mass of said resin component contained in said thermosetting resin composition.
The thermosetting resin composition contains an inorganic filler,
3. The method of manufacturing a semiconductor device according to claim 1, wherein the content of said inorganic filler in said thermosetting resin composition is 5 to 50% by mass based on the total mass of said thermosetting resin composition.
a substrate;
a first semiconductor element placed on the substrate;
a cured adhesive piece that is arranged to cover a region of the substrate where the first semiconductor element is arranged and seals the first semiconductor element;
a second semiconductor element arranged to cover the surface of the cured adhesive piece opposite to the substrate side and having a larger area than the first semiconductor element in a plan view;
with
The semiconductor device according to claim 1, wherein the adhesive piece comprises a thermosetting resin composition containing a curing agent having a hydroxyl equivalent of 150 g/eq or less and having a melt viscosity of 1000 to 11500 Pa·s at 120°C.
A thermosetting resin composition used in the manufacture of chip-embedded semiconductor devices,
A thermosetting resin composition containing a curing agent having a hydroxyl equivalent of 150 g/eq or less and having a melt viscosity of 1000 to 11500 Pa·s at 120°C.
Containing a high molecular weight component with a molecular weight of 100,000 to 1,000,000,
6. The thermosetting resin composition according to claim 5, wherein the content of the high molecular weight component is 25 to 45 parts by mass with respect to 100 parts by mass of the resin component contained in the thermosetting resin composition.
containing inorganic fillers,
7. The thermosetting resin composition according to claim 5, wherein the content of the inorganic filler is 5 to 50% by mass based on the total mass of the thermosetting resin composition.
An adhesive film used in the manufacture of a chip-embedded semiconductor device,
An adhesive film comprising the thermosetting resin composition according to any one of claims 5 to 7.
an adhesive layer;
The adhesive film of claim 8;
A dicing/die bonding integrated film.