WO2022163465A1 - Dispositif à semi-conducteur, son procédé de production, composition de résine thermodurcissable, film de fixation et film intégré de découpage en dés/fixation de puce - Google Patents

Dispositif à semi-conducteur, son procédé de production, composition de résine thermodurcissable, film de fixation et film intégré de découpage en dés/fixation de puce Download PDF

Info

Publication number
WO2022163465A1
WO2022163465A1 PCT/JP2022/001802 JP2022001802W WO2022163465A1 WO 2022163465 A1 WO2022163465 A1 WO 2022163465A1 JP 2022001802 W JP2022001802 W JP 2022001802W WO 2022163465 A1 WO2022163465 A1 WO 2022163465A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermosetting resin
resin composition
semiconductor element
adhesive
mass
Prior art date
Application number
PCT/JP2022/001802
Other languages
English (en)
Japanese (ja)
Inventor
裕貴 橋本
和弘 山本
由衣 國土
Original Assignee
昭和電工マテリアルズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 昭和電工マテリアルズ株式会社 filed Critical 昭和電工マテリアルズ株式会社
Priority to CN202280011093.0A priority Critical patent/CN116762169A/zh
Publication of WO2022163465A1 publication Critical patent/WO2022163465A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present disclosure relates to a semiconductor device and its manufacturing method, as well as a thermosetting resin composition, an adhesive film, and a dicing/die bonding integrated film.
  • a wire-embedded package is an example of a multi-layered package using a film-like adhesive. This package is manufactured through a process of embedding the semiconductor element and wires in the film-like adhesive by pressing the film-like adhesive against the wire-bonded semiconductor element on the substrate.
  • Connection reliability is one of the important characteristics required for semiconductor devices such as the stacked MCP.
  • film adhesives are being developed in consideration of properties such as heat resistance, moisture resistance and reflow resistance.
  • Patent Document 1 discloses an adhesive sheet with a thickness of 10-250 ⁇ m containing a thermosetting component and a filler.
  • Patent Document 2 discloses an adhesive composition comprising a mixture comprising an epoxy resin and a phenolic resin and an acrylic copolymer.
  • connection reliability of a semiconductor device is greatly affected by whether or not the semiconductor element can be mounted without creating voids on the bonding surface. For this reason, a film-like adhesive with high fluidity is used so that the semiconductor element can be pressure-bonded without generating voids, or a film adhesive with a low melt viscosity is used so that the generated voids can be eliminated in the sealing process of the semiconductor element. Ingenuity such as using a film-like adhesive has been made. For example, Patent Document 3 discloses an adhesive sheet with low viscosity and low tack strength.
  • the adhesive sheets of Patent Documents 1 and 3 contain a relatively large amount of epoxy resin for the purpose of high fluidity in order to embed wires during crimping. For this reason, thermal curing is likely to proceed due to heat generated during the manufacturing process of the semiconductor device. As a result, the adhesive film becomes highly elastic, in other words, the adhesive sheet is less likely to deform even under high temperature and high pressure conditions during sealing, and the voids formed during pressure bonding may not eventually disappear. On the other hand, since the adhesive composition of Patent Document 2 has a low elastic modulus, it is possible to eliminate voids in the sealing process, but due to its high viscosity, it is difficult to embed the wire during crimping. likely to be sufficient.
  • a controller chip for controlling the operation of a semiconductor device has been arranged on the uppermost layer of stacked semiconductor elements.
  • a semiconductor device package technology has been developed in which a controller chip is arranged at the bottom.
  • a relatively thick adhesive film film-like adhesive
  • a package in which a controller chip is embedded in a package is attracting attention (for example, see Patent Document 1 above).
  • the adhesive film used for such applications is called FOD (Film Over Die), and is a high adhesive film capable of embedding the wires connecting the controller chip and the circuit pattern, as well as the unevenness caused by the unevenness of the substrate surface. Liquidity is required. This problem can be solved by using a high-fluidity adhesive sheet such as the adhesive sheets of US Pat.
  • the adhesive composition that squeezes out may climb up to the top surface of the semiconductor device, which can cause electrical failures or wire bonding failures.
  • conventional adhesive films cannot always achieve both excellent embeddability in a semiconductor element and suppression of bleeding in the process of manufacturing a chip-embedded package, and there is room for improvement in this respect. there were.
  • the present disclosure is a thermosetting resin composition useful for manufacturing chip-embedded semiconductor devices, which is excellent in embedding properties of semiconductor elements and capable of sufficiently suppressing the occurrence of bleeding. I will provide a.
  • the present disclosure provides a semiconductor device having excellent connection reliability, a method for manufacturing the same, and an adhesive film and a dicing/die bonding integrated film using the thermosetting resin composition.
  • the present inventors have extensively studied the selection of the resin of the thermosetting resin composition used in the manufacture of semiconductor devices and the adjustment of physical properties.
  • the present inventors have found that by using a curing agent having a hydroxyl equivalent of 150 g/eq or less, a resin having a high crosslink density can be obtained, while excellent embeddability can be obtained by adjusting the melt viscosity of the thermosetting resin composition. It has been found that it has and can sufficiently suppress bleeding.
  • a method for manufacturing a semiconductor device comprises: (A) a step of preparing a member including a substrate and a first semiconductor element placed on the substrate; (C) adhering the first semiconductor element to the substrate such that the first semiconductor element is embedded in the adhesive piece; and (D) curing the adhesive piece by heating, wherein the thermosetting resin composition contains a curing agent having a hydroxyl equivalent of 150 g/eq or less, It has a melt viscosity of 1000 to 11500 Pa ⁇ s.
  • the resin By including a curing agent with a hydroxyl equivalent of 150 g/eq or less in the adhesive piece made of the thermosetting resin composition, as described above, the resin can have a high crosslink density and bleeding can be suppressed.
  • the melt viscosity at 120° C. is 1000 to 11500 Pa ⁇ s, excellent embeddability can be ensured.
  • the melt viscosity of the thermosetting resin composition can be made within the above range by adjusting the blending ratio of the components constituting the thermosetting resin composition. According to the studies of the present inventors, the melt viscosity of the thermosetting resin composition is a factor that affects both the embedding property and the suppression of bleeding. It is a factor that affects inhibition.
  • a semiconductor device includes a substrate, a first semiconductor element provided on the substrate, and a region of the substrate where the first semiconductor element is arranged. and the surface of the cured adhesive piece opposite to the substrate side, and is larger than the first semiconductor element in plan view and a second semiconductor element having an area, wherein the adhesive piece is made of a thermosetting resin composition containing a curing agent having a hydroxyl equivalent of 150 g/eq or less and having a melt viscosity of 1000 to 11500 Pa s at 120 ° C. Become.
  • the above semiconductor device has a mode in which the first semiconductor element (for example, a controller chip) is embedded in the cured product of the thermosetting resin composition, and can operate at high speed.
  • the first semiconductor element for example, a controller chip
  • an adhesive piece having a melt viscosity of 1000 to 11500 Pa ⁇ s at 120° C. for embedding the first semiconductor element, there are sufficiently few gaps at the interface with the substrate or the first semiconductor element. , the occurrence of the problems of contamination and bleeding of the substrate is sufficiently suppressed, so that excellent connection reliability between the substrate and the first semiconductor element can be achieved.
  • the thermosetting resin composition in the present disclosure may contain a high molecular weight component (for example, acrylic rubber) with a molecular weight of 100,000 to 1,000,000 from the viewpoint of adjusting the melt viscosity at 120°C.
  • the content of the high molecular weight component is, for example, 25 to 45 parts by mass with respect to 100 parts by mass of the resin component contained in the thermosetting resin composition.
  • the molecular weight of a high molecular weight component means a weight average molecular weight.
  • the weight average molecular weight means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
  • the thermosetting resin composition may contain an inorganic filler.
  • the content of the inorganic filler is 5 to 50% by mass based on the total mass of the thermosetting resin composition.
  • the content of the inorganic filler is 5% by mass or more, it is easy to suppress bleeding to a higher degree, and when it is 50% by mass or less, it is easy to achieve more excellent embeddability.
  • the adhesive film according to the present disclosure is used for manufacturing chip-embedded semiconductor devices, and is made of the above thermosetting resin composition.
  • a dicing/die bonding integrated film according to the present disclosure includes an adhesive layer and the adhesive film.
  • thermosetting resin composition useful for manufacturing a chip-embedded semiconductor device is a thermosetting resin that is excellent in the embedding property of a semiconductor element and can sufficiently suppress the occurrence of bleeding.
  • a composition is provided. That is, this thermosetting resin composition has excellent embedding properties for semiconductor elements (eg, controller chips), and sufficiently suppresses problems caused by contamination of peripheral circuits and excessive flow of resin during embedding. can.
  • semiconductor elements eg, controller chips
  • FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device.
  • FIG. 2 is a cross-sectional view schematically showing an example of a semiconductor element with an adhesive piece comprising an adhesive film and a second semiconductor element.
  • 3A to 3C are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 4A to 4D are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 5A to 5D are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 6A to 6C are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 7(a) to 7(e) are cross-sectional views schematically showing the process of manufacturing a laminate composed of an adhesive piece and a second semiconductor element.
  • (meth)acrylic acid means acrylic acid or methacrylic acid
  • (meth)acrylate means acrylate or its corresponding methacrylate
  • a or B may include either A or B, or may include both.
  • the term “layer” includes not only a shape structure formed over the entire surface but also a shape structure formed partially when observed as a plan view.
  • the term “step” as used herein refers not only to an independent step, but also to the term if the desired action of the step is achieved even if it cannot be clearly distinguished from other steps. included. Further, a numerical range indicated using “-” indicates a range including the numerical values described before and after "-" as the minimum and maximum values, respectively.
  • each component in the composition refers to the total amount of the multiple substances present in the composition when there are multiple substances corresponding to each component in the composition, unless otherwise specified. means.
  • the exemplified materials may be used alone, or two or more of them may be used in combination.
  • the upper limit or lower limit of the numerical range at one stage may be replaced with the upper limit or lower limit of the numerical range at another stage.
  • the upper and lower limits of the numerical ranges may be replaced with the values shown in the examples.
  • FIG. 1 is a cross-sectional view schematically showing a semiconductor device according to this embodiment.
  • the semiconductor device 100 shown in this figure includes a substrate 10, a first semiconductor element Wa arranged on the surface of the substrate 10, and a cured adhesive piece 20 sealing the first semiconductor element Wa. , a second semiconductor element Wb disposed above the first semiconductor element Wa, and a sealing layer 40 sealing the second semiconductor element Wb.
  • the substrate 10 has circuit patterns 10a and 10b on its surface. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 to 180 ⁇ m, and may be 90 to 140 ⁇ m.
  • the substrate 10 may be an organic substrate or a metal substrate such as a lead frame.
  • the first semiconductor element Wa is a controller chip for driving the semiconductor device 100 .
  • the first semiconductor element Wa is adhered onto the circuit pattern 10a via an adhesive 15, and is connected via the first wire 11 to the circuit pattern 10b.
  • the shape of the first semiconductor element Wa in plan view is, for example, a rectangle (square or rectangle).
  • the length of one side of the first semiconductor element Wa is, for example, 5 mm or less, and may be 2 to 4 mm or 1 to 4 mm.
  • the thickness of the first semiconductor element Wa is, for example, 10 to 150 ⁇ m, and may be 20 to 100 ⁇ m.
  • the second semiconductor element Wb has a larger area than the first semiconductor element Wa.
  • the second semiconductor element Wb is mounted on the substrate 10 via a cured adhesive piece 20 so that the entire first semiconductor element Wa and part of the circuit pattern 10b are covered.
  • the shape of the second semiconductor element Wb in plan view is, for example, a rectangle (square or rectangle).
  • the length of one side of the second semiconductor element Wb is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm.
  • the thickness of the second semiconductor element Wb is, for example, 10-170 ⁇ m, and may be 20-120 ⁇ m.
  • the second semiconductor element Wb is connected to the circuit pattern 10b via the second wire 12 and sealed with the sealing layer 40 .
  • the cured adhesive piece 20 is the cured adhesive piece 20P (see FIG. 2). Note that, as shown in FIG. 2, the adhesive piece 20P and the second semiconductor element Wb are substantially the same size.
  • a semiconductor element 30 with an adhesive piece shown in FIG. 2 is composed of an adhesive piece 20P and a second semiconductor element Wb. The semiconductor element 30 with an adhesive piece is produced through a dicing process and a pick-up process, as described later (see FIG. 7).
  • a method for manufacturing the semiconductor device 100 will be described. First, the structure 50 (member) shown in FIG. 3 is manufactured. That is, the first semiconductor element Wa is placed on the surface of the substrate 10 with the adhesive 15 interposed therebetween. After that, the first semiconductor element Wa and the circuit pattern 10b are electrically connected with the first wire 11. Next, as shown in FIG.
  • the adhesive piece 20P of the separately prepared semiconductor element 30 with an adhesive piece is pressed against the substrate 10. Then, as shown in FIG. As a result, the first semiconductor element Wa and the first wires 11 are embedded in the adhesive piece 20P.
  • the thickness of the adhesive piece 20P may be appropriately set according to the thickness of the first semiconductor element Wa and the like. good too. By setting the thickness of the adhesive piece 20P within the above range, a sufficient distance (distance G in FIG. 5) between the first semiconductor element Wa and the second semiconductor element Wb can be ensured.
  • the distance G is, for example, preferably 50 ⁇ m or more, and may be 50-75 ⁇ m or 50-80 ⁇ m.
  • the pressure bonding of the adhesive piece 20P to the substrate 10 is preferably performed, for example, under conditions of 80 to 180° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds.
  • the adhesive piece 20P is cured by heating.
  • This curing treatment is preferably carried out, for example, under conditions of 60 to 175° C. and 0.01 to 1.0 MPa for 5 minutes or longer.
  • the first semiconductor element Wa is sealed with the cured product 20 of the adhesive piece 20P (see FIG. 6).
  • the curing treatment of the adhesive piece 20P may be performed under a pressurized atmosphere from the viewpoint of reducing voids.
  • the second semiconductor element Wb is sealed with the sealing layer 40 to complete the semiconductor device 100 (FIG. 1).
  • a dicing/die-bonding integrated film 8 (hereinafter sometimes referred to as "film 8") is arranged in a predetermined device (not shown).
  • the film 8 comprises a substrate layer 1, an adhesive layer 2 and an adhesive layer 20A in this order.
  • the base material layer 1 is, for example, a polyethylene terephthalate film (PET film).
  • PET film polyethylene terephthalate film
  • the semiconductor wafer W is, for example, a thin semiconductor wafer with a thickness of 10-100 ⁇ m.
  • the semiconductor wafer W may be monocrystalline silicon, polycrystalline silicon, various ceramics, or compound semiconductors such as gallium arsenide.
  • the film 8 is attached to one surface of the semiconductor wafer W so that the adhesive layer 20A is in contact therewith.
  • This step is preferably carried out at a temperature of 50-100°C, more preferably 60-80°C. When the temperature is 50° C. or higher, good adhesion between the semiconductor wafer W and the adhesive layer 20A can be obtained. be.
  • the semiconductor wafer W, the adhesive layer 2 and the adhesive layer 20A are diced. As a result, the semiconductor wafer W is separated into individual semiconductor elements Wb.
  • the adhesive layer 20A is also singulated to form adhesive pieces 20P.
  • a dicing method includes a method using a rotary blade or a laser.
  • the semiconductor wafer W may be thinned by grinding the semiconductor wafer W prior to the dicing of the semiconductor wafer W.
  • the adhesive layer 2 is, for example, a UV curable type
  • the adhesive layer 2 is cured by irradiating the adhesive layer 2 with ultraviolet rays, as shown in FIG. It reduces the adhesive force between pieces 20P.
  • the base material layer 1 is expanded under room temperature or cooling conditions to separate the semiconductor elements Wb from each other, and the needles 42 are pushed up to adhere from the adhesive layer 2.
  • the adhesive piece 20P of the semiconductor element 30 with the adhesive piece is peeled off, and the semiconductor element 30 with the adhesive piece is sucked by the suction collet 44 and picked up.
  • thermosetting resin composition The thermosetting resin composition that constitutes the adhesive piece 20P will be described.
  • the adhesive piece 20P is obtained by dividing the adhesive layer 20A (adhesive film) into individual pieces, and both are made of the same thermosetting resin composition.
  • This thermosetting resin composition can, for example, go through a semi-cured (B stage) state and then become a fully cured (C stage) state by a subsequent curing treatment.
  • thermosetting resin composition preferably contains the following components.
  • (c) Inorganic filler (hereinafter sometimes simply referred to as "(c) component”) when (a) the thermosetting resin contains an epoxy resin, the epoxy resin (hereinafter sometimes simply referred to as "(a1) component”) corresponds to the "low molecular weight component".
  • (a) the thermosetting resin contains a phenolic resin (hereinafter sometimes simply referred to as "(a2) component”) that can be a curing agent for epoxy resins.
  • thermosetting resin composition may further contain the following components.
  • (d) Coupling agent hereinafter sometimes simply referred to as "(d) component”
  • (e) curing accelerator hereinafter sometimes simply referred to as "(e) component
  • the thermosetting resin composition preferably contains both a low molecular weight component (component (a1)) with a molecular weight of 10 to 1,000 and a high molecular weight component (component (b)) with a molecular weight of 100,000 to 1,000,000.
  • component (a1) a low molecular weight component
  • component (b) a high molecular weight component
  • the low-molecular-weight component contributes to excellent embeddability, while the high-molecular-weight component contributes to suppression of problems caused by excessive flow, such as bleeding.
  • the molecular weight of the low molecular weight component means the molecular weight obtained from the molecular formula.
  • the content M1 of the low molecular weight component is preferably 20 to 45 parts by mass, more preferably 21 to 40 parts by mass, with respect to 100 parts by mass of the resin component contained in the thermosetting resin composition. .
  • the softening point of the low molecular weight component is preferably 50°C or less, and may be, for example, 10 to 30°C.
  • the term "softening point" means a value measured by the ring and ball method in accordance with JIS K7234-1986.
  • the content M2 of the high molecular weight component is preferably 25 to 45 parts by mass, more preferably 30 to 43 parts by mass, with respect to 100 parts by mass of the resin component contained in the thermosetting resin composition. .
  • the content M2 of the high molecular weight component is 25 parts by mass or more, problems caused by excessive flow (bleeding, substrate contamination, sink marks, warping, etc.) can be easily suppressed, and on the other hand, it is 45 parts by mass or less. , the effect of easily achieving excellent embeddability is exhibited.
  • the upper limit of the content M2 of the high molecular weight component may be 42 parts by mass, 40 parts by mass, or 39 parts by mass.
  • the softening point of the high molecular weight component is preferably above 50°C and 100°C or less.
  • the total amount of the low molecular weight component and the high molecular weight component (M1+M2) is preferably 50 to 80 parts by weight, preferably 51 to 76 parts by weight, with respect to 100 parts by weight of the resin component contained in the thermosetting resin composition. It is more preferable to have When the total amount is 50 parts by mass or more, the effect of the combined use of these components tends to be sufficiently exhibited, while when the total amount is 80 parts by mass or less, excellent pickup properties are achieved. It has the effect of making it easier.
  • the resin components contained in the thermosetting resin composition other than the low molecular weight component and the high molecular weight component mainly include thermosetting resins having a molecular weight of 1,001 to 99,000.
  • the melt viscosity of the thermosetting resin composition at 120°C is 1000 to 11500 Pa ⁇ s from the viewpoint of connection reliability.
  • the melt viscosity is 1000 Pa ⁇ s or more, the problem of contamination and bleeding of the substrate 10 during pressure bonding tends to be sufficiently suppressed.
  • the melt viscosity of the thermosetting resin composition at 120° C. is 11500 Pa s or less, excellent embedding properties can be achieved. can be sufficiently reduced.
  • the melt viscosity is preferably 2,000 to 11,000 Pa ⁇ s, more preferably 3,000 to 10,000 Pa ⁇ s, still more preferably 4,000 to 9,000 Pa ⁇ s.
  • the melt viscosity was measured using ARES (manufactured by TA Instruments) while applying a strain of 5% to the thermosetting resin composition molded into a film while increasing the temperature at a rate of 5°C/min. Means the measured value of the case.
  • the melt viscosity of the thermosetting resin composition at 80°C is preferably 3500 to 12500 Pa ⁇ s from the viewpoint of connection reliability.
  • the melt viscosity is 3500 Pa ⁇ s or more, it is possible to sufficiently suppress the occurrence of problems such as contamination and bleeding of the substrate 10 during compression bonding.
  • the melt viscosity is 12500 Pa ⁇ s or less, excellent embeddability can be achieved, and specifically, voids at the interface with the substrate 10 or the first semiconductor element Wa can be sufficiently reduced.
  • the melt viscosity is preferably 5500 to 10500 Pa ⁇ s.
  • the melt viscosity of the thermosetting resin composition at 120° C. and 80° C. tends to decrease as the content of the high molecular weight component decreases, and tends to decrease as the content of the inorganic filler decreases.
  • Component (a1) can be used without any particular limitation as long as it has an epoxy group in its molecule.
  • the component (a1) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin.
  • Epoxy resins dicyclopentadiene skeleton-containing epoxy resins, stilbene-type epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenolmethane-type epoxy resins, biphenyl-type epoxy resins, xylylene-type epoxy resins, biphenylaralkyl-type epoxy resins , naphthalene-type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene. You may use these individually by 1 type or in combination of 2 or more types.
  • the component (a1) may be a cresol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of heat resistance.
  • the epoxy equivalent of component (a1) may be 90-300 g/eq, 110-290 g/eq, or 130-280 g/eq. When the epoxy equivalent of component (a1) is within this range, there is a tendency that fluidity can be ensured while maintaining the bulk strength of the adhesive film.
  • epoxy equivalent as used herein means a value measured by potentiometric titration in accordance with JIS K7236-2009.
  • the content of component (a1) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). It may be parts by mass.
  • the content of the component (a1) is 5 parts by mass or more, the embedding property of the adhesive film tends to be better.
  • the content of component (a1) is 50 parts by mass or less, the occurrence of bleeding tends to be more suppressed.
  • the (a2) component is a curing agent having a phenolic hydroxyl group in its molecule.
  • the hydroxyl equivalent of component (a2) is 150 g/eq or less, and may be, for example, 50 to 150 g/eq, 60 to 140 g/eq, or 70 to 130 g/eq.
  • the hydroxyl equivalent of the component (a2) is 150 g/eq or less, the crosslink density of the thermosetting resin composition can be sufficiently increased, thereby sufficiently preventing bleeding even when the melt viscosity is relatively high. can be suppressed to
  • the hydroxyl equivalent of the component (a2) is 50 g/eq or more, the adhesive strength of the thermosetting resin composition tends to be maintained at a higher level.
  • the softening point of component (a2) may be 50-140°C, 55-130°C, or 60-125°C.
  • the "hydroxyl equivalent" referred to here means that which can be measured by the neutralization titration method described in JIS K0070.
  • Component (a2) includes, for example, phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and/or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene.
  • phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol
  • naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene.
  • Phenols such as novolac-type phenolic resins, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenol obtained by condensing or co-condensing a compound having an aldehyde group such as formaldehyde in the presence of an acidic catalyst and/or phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. You may use these individually by 1 type or in combination of 2 or more types.
  • the component (a2) may be a phenol aralkyl resin, a naphthol aralkyl resin, or a novolak-type phenol resin from the viewpoint of hygroscopicity and heat resistance.
  • the content of component (a2) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). can be a department.
  • the content of component (a2) is 5 parts by mass or more, better curability tends to be obtained.
  • the content of the component (a2) is 50 parts by mass or less, the embedding property tends to be better.
  • the ratio of the epoxy equivalent of component (a1) to the hydroxyl equivalent of component (a2) is 0.30/0.70 from the viewpoint of curability. ⁇ 0.70/0.30, 0.35/0.65 ⁇ 0.65/0.35, 0.40/0.60 ⁇ 0.60/0.40, or 0.45/0.55 ⁇ It may be 0.55/0.45.
  • the corresponding amount ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained.
  • the corresponding amount ratio is 0.70/0.30 or less, it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity.
  • Component (b) preferably has a glass transition temperature (Tg) of 50° C. or lower.
  • Component (b) includes, for example, acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins and modified products thereof.
  • the (b) component may contain an acrylic resin from the viewpoint of fluidity.
  • acrylic resin means a polymer containing structural units derived from (meth)acrylic acid ester.
  • the acrylic resin is preferably a polymer containing, as a structural unit, a structural unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
  • the acrylic resin may also be acrylic rubber such as a copolymer of (meth)acrylic acid ester and acrylonitrile.
  • the glass transition temperature (Tg) of the acrylic resin may be -50 to 50°C or -30 to 30°C.
  • Tg of the acrylic resin is ⁇ 50° C. or higher, it tends to be possible to prevent the flexibility of the adhesive composition from becoming too high. This makes it easier to cut the adhesive film during wafer dicing, making it possible to prevent the occurrence of burrs.
  • Tg of the acrylic resin is 50°C or less, it tends to be possible to suppress a decrease in the flexibility of the adhesive composition.
  • the glass transition temperature (Tg) means a value measured using a DSC (differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).
  • the weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3,000,000 or 500,000 to 2,000,000.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
  • acrylic resins include, for example, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 (all manufactured by Nagase ChemteX Corporation).
  • the content of component (b) is 5 to 70 parts by mass, 10 to 50 parts by mass, or 15 to 30 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). It may be parts by mass.
  • the content of the component (b) is 5 parts by mass or more, the fluidity control during molding and the handleability at high temperatures can be further improved. If the content of the component (b) is 70 parts by mass or less, the embeddability can be further improved.
  • Component (c) includes, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, and boron nitride. , silica and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (c) may be silica from the viewpoint of compatibility with the resin.
  • the average particle diameter of component (c) may be 0.005 to 1 ⁇ m or 0.05 to 0.5 ⁇ m from the viewpoint of improving adhesiveness.
  • the average particle diameter means a value obtained by converting from the BET specific surface area.
  • the content of component (c) is 5 to 50 parts by mass, 15 to 45 parts by mass, or 25 to 39 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b), and (c). It may be parts by mass.
  • the content of component (c) is 5 parts by mass or more, the fluidity of the adhesive film tends to be further improved.
  • the content of component (c) is 50 parts by mass or less, the dicing property of the adhesive film tends to be better.
  • (d) Component may be a silane coupling agent.
  • Silane coupling agents include, for example, ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, and the like. be done. You may use these individually by 1 type or in combination of 2 or more types.
  • the content of component (d) may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total mass of components (a), (b) and (c).
  • Component (e) is not particularly limited, and commonly used components can be used.
  • Component (e) includes, for example, imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, imidazoles and derivatives thereof may be used as component (e) from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. You may use these individually by 1 type or in combination of 2 or more types.
  • the content of component (e) may be 0.01 to 1 part by mass with respect to 100 parts by mass of the total mass of components (a), (b) and (c).
  • the dicing/die-bonding integrated film 8 shown in FIG. 7A and its manufacturing method will be described.
  • the method for producing the film 8 includes the steps of applying a varnish of an adhesive composition containing a solvent onto a base film (not shown), and drying the applied varnish by heating at 50 to 150° C. to form an adhesive layer 20A. and forming.
  • the varnish of the adhesive composition can be prepared, for example, by mixing or kneading components (a) to (c) and, if necessary, components (d) and (e) in a solvent.
  • Mixing or kneading can be carried out by using an ordinary dispersing machine such as a stirrer, a kneading machine, a triple roll, a ball mill, or the like, and by appropriately combining these.
  • the solvent for preparing the varnish is not limited as long as it can uniformly dissolve, knead, or disperse the above components, and conventionally known solvents can be used.
  • solvents include ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene and xylene. It is preferable to use methyl ethyl ketone, cyclohexanone, etc., because of their high drying speed and low price.
  • the base film is not particularly limited, and examples include polyester film, polypropylene film (OPP film, etc.), polyethylene terephthalate film, polyimide film, polyetherimide film, polyethylene naphthalate film, polymethylpentene film, and the like.
  • a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, and the like.
  • the conditions for drying by heating are not particularly limited as long as the solvent used is sufficiently volatilized. Heat drying may be carried out by stepwise raising the temperature within the range of 50 to 150°C. By volatilizing the solvent contained in the varnish by heating and drying, a laminated film of the substrate film and the adhesive layer 20A can be obtained.
  • the film 8 can be obtained by laminating the laminated film obtained as described above and the dicing tape (laminated body of the base layer 1 and the adhesive layer 2).
  • the substrate layer 1 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the substrate layer 1 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc., as necessary.
  • the adhesive layer 2 may be UV curable or pressure sensitive.
  • the film 8 may further include a protective film (not shown) covering the adhesive layer 2 .
  • the present invention is not limited to the above embodiments.
  • the package in which the two semiconductor elements Wa and Wb are stacked is illustrated, but a third semiconductor element may be stacked above the second semiconductor element Wb, One or more semiconductor elements may be stacked thereon.
  • Varnishes (8 types in total) containing the components shown in Tables 1 and 2 were prepared as follows. That is, cyclohexanone was added to a composition containing an epoxy resin, a phenol resin, and an inorganic filler, and the mixture was stirred. After the acrylic rubber was added and stirred, a coupling agent and a curing accelerator were further added, and the mixture was stirred until each component was sufficiently uniform to obtain a varnish.
  • the varnish containing the above ingredients was filtered through a 100-mesh filter and vacuum defoamed.
  • the varnish after vacuum defoaming was applied onto a release-treated polyethylene terephthalate (PET) film (thickness: 38 ⁇ m).
  • PET polyethylene terephthalate
  • the applied varnish was dried by heating in two steps, 90° C. for 5 minutes and then 140° C. for 5 minutes. In this way, an adhesive sheet comprising a PET film as a base film and an adhesive film (thickness of 60 ⁇ m) in a B-stage state was obtained.
  • melt viscosity of adhesive film was measured by the following method. That is, five adhesive films each having a thickness of 60 ⁇ m were laminated to obtain a thickness of 300 ⁇ m, which was then punched into a size of 10 mm ⁇ 10 mm to obtain a sample for measurement. A circular aluminum plate jig with a diameter of 8 mm was set in a dynamic viscoelasticity device ARES (manufactured by TA Instruments), and the sample was further set thereon.
  • ARES dynamic viscoelasticity device
  • a dicing/die-bonding integrated film comprising each adhesive film (thickness: 120 ⁇ m) according to Examples and Comparative Examples and an adhesive film for dicing was produced. This was attached to a semiconductor wafer (diameter: 8 inches, thickness: 50 ⁇ m). By dicing this, a semiconductor element with a second adhesive piece, which consists of a second semiconductor element (size: 7.5 mm ⁇ 7.5 mm) and a second adhesive piece, was obtained.
  • a substrate surface unevenness: maximum 6 ⁇ m
  • the first adhesive was applied by heating at 120° C. for 2 hours. The pieces were semi-cured.
  • the second semiconductor element was crimped under the conditions of 130° C., 0.20 MPa, and 2 seconds via the second adhesive piece to be evaluated so as to cover the first semiconductor element. At this time, alignment was performed so that the center positions of the first semiconductor element and the second semiconductor element, which had been pressure-bonded earlier, were aligned in a plan view.
  • the structure obtained as described above was placed in a pressure oven, heated from 35° C. to 170° C. at a rate of 3° C./min, and heated at 170° C. for 30 minutes.
  • the implantability was confirmed by analyzing the heat-treated structure with an ultrasonic imaging device SAT (manufactured by Hitachi Power Solutions Co., Ltd., product number FS200II, probe: 25 MHz). Evaluation was performed according to the following criteria. Tables 3 and 4 show the results. A: The area ratio of voids in a given cross section is less than 5%. B: The area ratio of voids in a predetermined cross section is 5% or more.
  • each adhesive film (120 ⁇ m thick) according to Examples and Comparative Examples was attached to a semiconductor wafer (400 ⁇ m thick) at 70°C. By dicing this, a semiconductor element with an adhesive piece, which consists of a semiconductor element (size: 5 mm ⁇ 5 mm) and an adhesive piece, was obtained. On the other hand, a substrate having a surface coated with a solder resist ink (AUS308) was prepared. A semiconductor element was press-bonded to this surface via an adhesive piece under conditions of 120° C., 0.1 MPa, and 5 seconds. After that, it was heat-treated at 110° C.
  • the adhesive films of Examples 1 to 5 have excellent embeddability after treatment in a pressure oven, compared to the adhesive films of Comparative Examples 1 to 3. It was also confirmed that package contamination and bleeding can be suppressed.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dicing (AREA)

Abstract

L'invention concerne une composition de résine thermodurcissable qui est utilisée pour la production d'un dispositif à semi-conducteur intégré à une puce, et qui contient un agent de durcissement qui a un équivalent hydroxyle de 150 g/éq ou moins, tout en ayant une viscosité à l'état fondu de 1000 à 11500 Pa.s à 120° C.
PCT/JP2022/001802 2021-01-28 2022-01-19 Dispositif à semi-conducteur, son procédé de production, composition de résine thermodurcissable, film de fixation et film intégré de découpage en dés/fixation de puce WO2022163465A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202280011093.0A CN116762169A (zh) 2021-01-28 2022-01-19 半导体装置及其制造方法、以及热固性树脂组合物、黏合膜及切割晶粒接合一体型膜

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021012231A JP2022115581A (ja) 2021-01-28 2021-01-28 半導体装置及びその製造方法、並びに、熱硬化性樹脂組成物、接着フィルム及びダイシング・ダイボンディング一体型フィルム
JP2021-012231 2021-06-08

Publications (1)

Publication Number Publication Date
WO2022163465A1 true WO2022163465A1 (fr) 2022-08-04

Family

ID=82653363

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/001802 WO2022163465A1 (fr) 2021-01-28 2022-01-19 Dispositif à semi-conducteur, son procédé de production, composition de résine thermodurcissable, film de fixation et film intégré de découpage en dés/fixation de puce

Country Status (4)

Country Link
JP (1) JP2022115581A (fr)
CN (1) CN116762169A (fr)
TW (1) TW202231809A (fr)
WO (1) WO2022163465A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015122422A (ja) * 2013-12-24 2015-07-02 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
WO2019220540A1 (fr) * 2018-05-15 2019-11-21 日立化成株式会社 Dispositif à semi-conducteur, composition de résine thermodurcissable utilisée pour sa production, et bande intégrée de liaison de puces et de découpage en dés
WO2020013250A1 (fr) * 2018-07-11 2020-01-16 日立化成株式会社 Procédé de fabrication de dispositif à semi-conducteur, composition de résine thermodurcissable, et film de fixation de matrice de découpage en dés
WO2020157805A1 (fr) * 2019-01-28 2020-08-06 日立化成株式会社 Composition adhésive, adhésif de type film, feuille adhésive, et procédé de production d'un dispositif à semi-conducteur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015122422A (ja) * 2013-12-24 2015-07-02 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
WO2019220540A1 (fr) * 2018-05-15 2019-11-21 日立化成株式会社 Dispositif à semi-conducteur, composition de résine thermodurcissable utilisée pour sa production, et bande intégrée de liaison de puces et de découpage en dés
WO2020013250A1 (fr) * 2018-07-11 2020-01-16 日立化成株式会社 Procédé de fabrication de dispositif à semi-conducteur, composition de résine thermodurcissable, et film de fixation de matrice de découpage en dés
WO2020157805A1 (fr) * 2019-01-28 2020-08-06 日立化成株式会社 Composition adhésive, adhésif de type film, feuille adhésive, et procédé de production d'un dispositif à semi-conducteur

Also Published As

Publication number Publication date
TW202231809A (zh) 2022-08-16
JP2022115581A (ja) 2022-08-09
CN116762169A (zh) 2023-09-15

Similar Documents

Publication Publication Date Title
JP2023123595A (ja) 半導体装置の製造方法、接着層及びダイシング・ダイボンディング一体型フィルム
JP7327416B2 (ja) 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP2023017948A (ja) 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
TWI791751B (zh) 半導體裝置的製造方法及接著膜
JP7136200B2 (ja) 半導体装置、並びに、その製造に使用する熱硬化性樹脂組成物及びダイシングダイボンディング一体型テープ
WO2022163465A1 (fr) Dispositif à semi-conducteur, son procédé de production, composition de résine thermodurcissable, film de fixation et film intégré de découpage en dés/fixation de puce
TWI829727B (zh) 接著劑組成物、膜狀接著劑、接著片及半導體裝置的製造方法
JP7322897B2 (ja) 接着フィルム、ダイシング・ダイボンディング一体型フィルム及び半導体パッケージの製造方法
JP7028264B2 (ja) フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法
WO2020136902A1 (fr) Film de liaison de puce, feuille adhésive, et boîtier de semi-conducteur et son procédé de fabrication
WO2023181397A1 (fr) Film adhésif pour semi-conducteur, film de collage de puce d'individualisation et procédé de fabrication de dispositif à semi-conducteur
JP7283399B2 (ja) 熱硬化性樹脂組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
WO2023152837A1 (fr) Adhésif sous forme de film, film deux-en-un de découpage en dés et de fixage de puce, dispositif semiconducteur et procédé de fabrication associé
WO2023157846A1 (fr) Adhésif de type film et son procédé de production, film de découpage en dés/puces intégré, et dispositif à semi-conducteur et son procédé de production
WO2022149581A1 (fr) Composition d'adhésif, adhésif sous forme de film, film intégré de découpage en dés et fixation de puce, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
WO2022149582A1 (fr) Adhésif de type film, film de découpage en dés/fixation de puce intégré, dispositif à semi-conducteur et son procédé de production
JP2023142901A (ja) 半導体用接着フィルム、ダイシング・ダイボンディング一体型フィルム、及び半導体装置の製造方法
TW202414550A (zh) 半導體裝置的製造方法、接著層及切晶黏晶一體型膜

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22745686

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 202280011093.0

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22745686

Country of ref document: EP

Kind code of ref document: A1