WO2022149582A1 - Adhésif de type film, film de découpage en dés/fixation de puce intégré, dispositif à semi-conducteur et son procédé de production - Google Patents

Adhésif de type film, film de découpage en dés/fixation de puce intégré, dispositif à semi-conducteur et son procédé de production Download PDF

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Publication number
WO2022149582A1
WO2022149582A1 PCT/JP2022/000142 JP2022000142W WO2022149582A1 WO 2022149582 A1 WO2022149582 A1 WO 2022149582A1 JP 2022000142 W JP2022000142 W JP 2022000142W WO 2022149582 A1 WO2022149582 A1 WO 2022149582A1
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Prior art keywords
adhesive
film
semiconductor element
component
semiconductor
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PCT/JP2022/000142
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English (en)
Japanese (ja)
Inventor
由衣 國土
奏美 中村
和弘 山本
翔太 青柳
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昭和電工マテリアルズ株式会社
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Priority to JP2022574060A priority Critical patent/JPWO2022149582A1/ja
Priority to CN202280008972.8A priority patent/CN116685654A/zh
Priority to KR1020237022627A priority patent/KR20230129992A/ko
Publication of WO2022149582A1 publication Critical patent/WO2022149582A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present disclosure relates to a film-like adhesive, a dicing / die bonding integrated film, a semiconductor device, and a method for manufacturing the same.
  • Patent Documents 1 and 2 disclose a film-like adhesive used for an adhesive layer in such a method.
  • the film-like adhesive used is required to be thinned (for example, having a thickness of 30 ⁇ m or less).
  • the uneven embedding property of the surface of the support member of the film-like adhesive or the surface of the semiconductor element may not be sufficient, and there is still room for improvement.
  • the uneven embedding property of the film-shaped adhesive can be improved by lowering the viscosity of the film-shaped adhesive.
  • the storage elastic modulus after curing is not sufficient, and the bonding wire tends to be insufficient in terms of wire bonding property such that a bonding wire cannot be provided.
  • the film-like adhesive can be thinned and has both uneven embedding property and wire bonding property (in other words, low viscosity before curing and high elasticity after curing). Can be compatible with each other).
  • the main object of the present disclosure is to provide a film-like adhesive which can be thinned and has excellent unevenness embedding property and wire bonding property.
  • the film-like adhesive has a shear viscosity at 120 ° C. of 17,000 Pa ⁇ s or less, a storage elastic modulus at 150 ° C. after curing at 170 ° C. for 1 hour, and a thickness of 30 ⁇ m or less. Is. According to the studies by the present inventors, when the shear viscosity at 120 ° C. before curing is 17,000 Pa ⁇ s or less and the storage elastic modulus at 150 ° C. after curing is 23 MPa or more, uneven embedding property and wire bonding property are obtained. It was found that both of these can be achieved and that it is easy to form a thin film.
  • One aspect of the film-like adhesive contains an epoxy resin, a first curing agent having a softening point of 90 ° C. or higher, a second curing agent having a softening point of less than 90 ° C., and an elastomer.
  • the difference between the softening point of the first curing agent and the softening point of the second curing agent may be 10 ° C. or higher.
  • the epoxy resin may contain an epoxy resin having a softening point of 40 ° C. or lower.
  • the film-like adhesive may further contain an inorganic filler.
  • the average particle size of the inorganic filler may be 0.7 ⁇ m or less.
  • the content of the elastomer may be 22 to 45% by mass based on the total mass of the film-like adhesive.
  • the film-like adhesive may be used in the manufacturing process of a semiconductor device in which a plurality of semiconductor elements are laminated.
  • the semiconductor device may be a stacked MCP or a three-dimensional NAND type memory.
  • the dicing / die bonding integrated film includes a base material layer, an adhesive layer, and an adhesive layer made of the above-mentioned film-like adhesive in this order.
  • the semiconductor device includes a semiconductor element, a support member on which the semiconductor element is mounted, and an adhesive member provided between the semiconductor element and the support member and for adhering the conductor element and the support member.
  • the adhesive member is a cured product of the above-mentioned film-like adhesive.
  • the semiconductor device may further include other semiconductor devices laminated on the surface of the semiconductor device.
  • Another aspect of the present disclosure relates to a method for manufacturing a semiconductor device.
  • One aspect of the method for manufacturing the semiconductor device is to interpose the above-mentioned film-like adhesive between the semiconductor element and the support member or between the first semiconductor element and the second semiconductor element, and the semiconductor element and the semiconductor element and the second semiconductor element.
  • the support member, or the step of adhering the first semiconductor element and the second semiconductor element is provided.
  • the present invention includes a step of manufacturing a semiconductor element with an adhesive piece, and a step of adhering the semiconductor element with an adhesive piece to a support member via an adhesive piece.
  • the method for manufacturing a semiconductor device may further include a step of adhering another semiconductor element with an adhesive piece to the surface of the semiconductor element adhered to the support member via the adhesive piece.
  • a film-like adhesive which can be thinned and has excellent unevenness embedding property and wire bonding property. Further, according to the present disclosure, a dicing / die bonding integrated film using such a film-like adhesive, a semiconductor device, and a method for manufacturing the same are provided. Further, according to the present disclosure, there is provided a method for manufacturing a semiconductor device using such a dicing / die bonding integrated film.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film.
  • FIG. 3 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • FIG. 4 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • FIG. 5 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • the upper limit value and the lower limit value described individually can be arbitrarily combined.
  • “A or B" may include either A or B, and may include both.
  • each component in the composition means the total amount of the plurality of substances present in the composition when a plurality of substances corresponding to each component are present in the composition, unless otherwise specified.
  • (meth) acrylate means acrylate or the corresponding methacrylate.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive.
  • the film-like adhesive 1 (adhesive film) shown in FIG. 1 may be thermosetting, and may be in a semi-cured (B stage) state and then a completely cured (C stage) state after a curing treatment. It's okay.
  • the shear viscosity of the film-like adhesive at 120 ° C. is 17,000 Pa ⁇ s or less, 15,000 Pa ⁇ s or less, 13,000 Pa ⁇ s or less, 12000 Pa ⁇ s or less, 10,000 Pa ⁇ s or less, 8,000 Pa ⁇ s or less, or 8,000 Pa ⁇ s or less. There may be.
  • the shear viscosity is 17,000 Pa ⁇ s or less, the uneven embedding property of the surface of the support member or the surface of the semiconductor element tends to be excellent.
  • the shear viscosity of the film-like adhesive at 120 ° C. can be measured by, for example, the method described in Examples.
  • the storage elastic modulus of the film-like adhesive at 150 ° C. after curing at 170 ° C. for 1 hour is 23 MPa or more, 25 MPa or more, 30 MPa or more, 35 MPa or more, 40 MPa or more, 45 MPa or more, or 50 MPa or more. There may be.
  • the upper limit of the storage elastic modulus at 150 ° C. after curing the film-like adhesive at 170 ° C. for 1 hour is not particularly limited, but for example, is 2000 MPa or less, 1500 MPa or less, 1000 MPa or less, 700 MPa or less, 500 MPa.
  • the storage elastic modulus may be 300 MPa or less, 200 MPa or less, 150 MPa or less, or 100 MPa or less.
  • the storage elastic modulus is 2000 MPa or less, it becomes easier to thin the film-like adhesive, and it tends to be possible to more sufficiently suppress the cured product of the film-like adhesive from becoming too hard.
  • the storage elastic modulus at 150 ° C. after the film-like adhesive is cured can be measured by, for example, the method described in Examples.
  • the film-like adhesive When the film-like adhesive has a shear viscosity of 17,000 Pa ⁇ s or less at 120 ° C. before curing and a storage elastic modulus of 23 MPa or more at 150 ° C. after curing under the conditions of 170 ° C. for 1 hour, the thin film is formed. It tends to be easy to form.
  • the thickness of the film-like adhesive is 30 ⁇ m or less, and may be 25 ⁇ m or less, 20 ⁇ m or less, 18 ⁇ m or less, 15 ⁇ m or less, 12 ⁇ m or less, 10 ⁇ m or less, 8 ⁇ m or less, or 7 ⁇ m or less.
  • the lower limit of the thickness of the film-shaped adhesive is not particularly limited, but may be, for example, 1 ⁇ m or more.
  • the constituent components of the film-shaped adhesive are not particularly limited as long as the film-shaped adhesive satisfies the following conditions. -The shear viscosity at 120 ° C before curing is 17,000 Pa ⁇ s or less.-The storage elastic modulus at 150 ° C after curing at 170 ° C for 1 hour is 23 MPa or more.-The thickness is 30 ⁇ m or less. That there is
  • an epoxy resin hereinafter, may be referred to as “component (A)” and a first curing agent having a softening point of 90 ° C. or higher (hereinafter, “(B1)). It may be referred to as “component”), a second curing agent having a softening point of less than 90 ° C. (hereinafter, may be referred to as "(B2) component”), and an elastomer (hereinafter, "(C) component”).
  • component (A) an epoxy resin
  • component (B1) a first curing agent having a softening point of 90 ° C. or higher
  • component a second curing agent having a softening point of less than 90 ° C.
  • (C) component an elastomer
  • an inorganic filler hereinafter, may be referred to as “component (D)”
  • component (D) component Coupling agent (hereinafter, may be referred to as “(E) component”)
  • curing accelerator hereinafter, may be referred to as "(F) component”
  • other components etc. may be further contained. good.
  • Such a film-like adhesive tends to easily satisfy the above conditions.
  • Component (A) Epoxy resin
  • the component (A) can be used without particular limitation as long as it has an epoxy group in the molecule.
  • Examples of the component (A) include bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S type epoxy resin; phenol novolac type epoxy resin; cresol novolac type epoxy resin; bisphenol A novolak type epoxy resin; bisphenol F novolak type.
  • the component (A) may contain a cresol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of film tackiness, flexibility, and the like.
  • the component (A) may contain an epoxy resin having a softening point of 40 ° C. or lower (or an epoxy resin liquid at 30 ° C., hereinafter may be referred to as “component (A1)”). That is, the component (A) is a component (A1) and an epoxy resin having a softening point of more than 40 ° C. (or an epoxy resin which is solid at 30 ° C., hereinafter may be referred to as “component (A2)”). It may be a combination.
  • component (A) contains the component (A1), the storage elastic modulus after curing tends to be improved, and the wire bonding property tends to be improved. Further, when the component (A) is a combination of the component (A1) and the component (A2), the thin film tends to be further enabled.
  • the softening point means a value measured by the ring-and-ball method in accordance with JIS K7234.
  • EXA-830CRP (trade name, manufactured by DIC Corporation, liquid at 30 ° C.)
  • YDF-8170C (trade name, manufactured by Nittetsu Chemical & Materials Co., Ltd., liquid at 30).
  • EP-4088S (trade name, manufactured by ADEKA Corporation, liquid at 30 ° C.) and the like.
  • the content of the component (A1) is 5% by mass or more and 10% by mass or more based on the total mass of the component (A). , Or 15% by mass or more, and may be 80% by mass or less, 70% by mass or less, or 65% by mass or less.
  • the content of the component (A1) in the component (A) in the adhesive composition may be the same as the above range.
  • the content of the component (A2) is 20% by mass or more and 30% by mass or more based on the total mass of the component (A). , 35% by mass or more, 95% by mass or less, 90% by mass or less, or 85% by mass or less.
  • the content of the component (A2) in the component (A) in the adhesive composition may be the same as the above range.
  • the epoxy equivalent of the component (A) is not particularly limited, but may be 90 to 300 g / eq or 110 to 290 g / eq. When the epoxy equivalent of the component (A) is in such a range, it tends to be easy to secure the fluidity of the adhesive composition when forming the film-like adhesive while maintaining the bulk strength of the film-like adhesive. be.
  • Component Second curing agent having a softening point of less than 90 ° C.
  • the components (B1) and (B2) are (A). It can be a component that acts as a curing agent for the component, i.e., an epoxy resin curing agent.
  • the film-like adhesive contains the component (B1)
  • the film-like adhesive can be highly crosslinked, the storage elastic modulus after curing can be improved, and the wire bonding property can be improved.
  • flexibility can be imparted and the uneven embedding property of the surface of the support member or the surface of the semiconductor element can be improved.
  • the film-like adhesive contains the component (B2), the reaction rate with the component (A) is increased, so that the curing shrinkage is reduced and the reliability of the semiconductor device can be improved.
  • Both the (B1) component and the (B2) component may be a phenol resin.
  • the phenol resin can be used as the component (B1) or the component (B2) according to the softening point as long as it has a phenolic hydroxyl group in the molecule.
  • the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde and the like.
  • Phenols such as novolak type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol and /
  • examples thereof include phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, naphthol aralkyl resin, biphenyl aralkyl type phenol resin, phenyl aralkyl type phenol resin and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the phenol resin may contain a novolak type phenol resin or a phenylaralkyl type phenol resin.
  • the hydroxyl group equivalent of the phenol resin may be 70 g / eq or more or 70 to 300 g / eq.
  • the storage elastic modulus tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to the generation of foaming, outgas and the like.
  • the component (B1) may be a phenol resin having a softening point of 90 ° C. or higher, and such a phenol resin may be used alone or in combination of two or more.
  • the softening point of the component (B1) is 90 ° C. or higher, and may be 95 ° C. or higher, 100 ° C. or higher, 105 ° C. or higher, 110 ° C. or higher, or 115 ° C. or higher.
  • the upper limit of the softening point of the component (B1) may be, for example, 200 ° C. or lower.
  • the component (B1) Commercially available products of the component (B1) include, for example, PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., softening point: 120 ° C.), J-DPP-140 (trade name, manufactured by JFE Chemical Co., Ltd., softened). Point: 140 ° C.), GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., softening point: 99 to 106 ° C.) and the like.
  • the content of the component (B1) may be 20% by mass or more, 30% by mass or more, or 40% by mass or more, and 80% by mass or less, based on the total mass of the component (B1) and the component (B2). It may be 70% by mass or less, or 60% by mass or less.
  • the content of the component (B1) in the component (B1) and the component (B2) in the adhesive composition may be the same as in the above range.
  • the component (B2) may be a phenol resin having a softening point of less than 90 ° C., and such a phenol resin may be used alone or in combination of two or more.
  • the softening point of the component (B2) is less than 90 ° C, and may be 85 ° C or lower or 80 ° C or lower.
  • the lower limit of the softening point of the component (B2) may be, for example, 20 ° C. or higher.
  • the difference between the softening point of the component (B1) and the softening point of the component (B2) may be 10 ° C. or higher.
  • the difference between the softening point of the component (B1) and the softening point of the component (B2) may be 15 ° C. or higher, 20 ° C. or higher, or 25 ° C. or higher.
  • the component (B2) Commercially available products of the component (B2) include, for example, MEH-7800M (trade name, manufactured by Meiwa Kasei Co., Ltd., softening point: 80 ° C.), J-DPP-85 (trade name, manufactured by JFE Chemical Co., Ltd., softening point:). 85 ° C.), MEH-5100-5S (trade name, manufactured by Meiwa Kasei Co., Ltd., softening point: 65 ° C.) and the like.
  • MEH-7800M trade name, manufactured by Meiwa Kasei Co., Ltd., softening point: 80 ° C.
  • J-DPP-85 trade name, manufactured by JFE Chemical Co., Ltd., softening point: 85 ° C.
  • MEH-5100-5S trade name, manufactured by Meiwa Kasei Co., Ltd., softening point: 65 ° C.
  • the content of the component (B2) may be 20% by mass or more, 30% by mass or more, or 40% by mass or more, and 80% by mass or less, based on the total mass of the component (B1) and the component (B2). It may be 70% by mass or less, or 60% by mass or less.
  • the content of the component (B2) in the component (B1) and the component (B2) in the adhesive composition may be the same as in the above range.
  • the ratio of the epoxy equivalent of the component (A) to the hydroxyl group equivalents of the components (B1) and (B2) (the epoxy equivalent of the component (A) / (B1) ) And (B2) component hydroxyl group equivalents) are 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35 from the viewpoint of curability. , 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45.
  • the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
  • the total content of the component (A), the component (B1), and the component (B2) may be 20% by mass or more, and 25% by mass or more or 30% by mass, based on the total mass of the film-like adhesive. It may be the above.
  • the total content of the component (A), the component (B1), and the component (B2) is 80% by mass or less, 70% by mass or less, and 60 based on the total mass of the film-like adhesive from the viewpoint of handleability. It may be 5% by mass or less, 55% by mass or less, or 50% by mass or less.
  • the total content of the component (A), the component (B1), and the component (B2) in the adhesive composition may be the same as in the above range.
  • Component (C) Elastomer
  • the component (C) include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin; and modified products of these resins. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (C) is derived from the (meth) acrylic acid ester because it has few ionic impurities and is excellent in heat resistance, it is easy to secure the connection reliability of the semiconductor device, and it is excellent in the fluidity. It may be an acrylic resin (acrylic rubber) having a constituent unit as a main component.
  • the content of the constituent unit derived from the (meth) acrylic acid ester in the component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of the constituent units.
  • the acrylic resin (acrylic rubber) may contain a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
  • the glass transition temperature (Tg) of the component (C) may be 5 ° C. or higher, and may be 10 ° C. or higher.
  • Tg of the component (C) is 5 ° C. or higher, the adhesive strength of the film-like adhesive can be further improved, and further, it is possible to prevent the film-like adhesive from becoming too flexible. There is a tendency. This makes it easier to cut the film-like adhesive during wafer dicing and prevents the occurrence of burrs.
  • the upper limit of Tg of the component (C) is not particularly limited, but may be, for example, 55 ° C. or lower, 50 ° C. or lower, 45 ° C. or lower, 40 ° C. or lower, 35 ° C. or lower, 30 ° C.
  • the glass transition temperature (Tg) means a value measured using a DSC (heat differential scanning calorimeter) (for example, Thermo Plus 2 manufactured by Rigaku Co., Ltd.).
  • the Tg of the component (C) is the type and content of the structural unit constituting the component (C) (when the component (C) is an acrylic resin (acrylic rubber), the structural unit derived from the (meth) acrylic acid ester). Can be adjusted to a desired range by adjusting.
  • the weight average molecular weight (Mw) of the component (C) may be 100,000 or more, 300,000 or more, or 500,000 or more, and may be 3 million or less, 2 million or less, or 1 million or less.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve made of standard polystyrene.
  • Examples of commercially available products of the component (C) include SG-P3, SG-80H (all manufactured by Nagase ChemteX Corporation), KH-CT-865 (manufactured by Showa Denko Materials Co., Ltd.) and the like.
  • the content of the component (C) may be 22 to 45% by mass based on the total mass of the film-like adhesive.
  • the content of the component (C) may be 25% by mass or more, or 28% by mass or more, based on the total mass of the film-shaped adhesive.
  • both uneven embedding property and wire bonding property can be achieved (low viscosity before curing and after curing).
  • the content of the component (C) is 44% by mass or less, 42% by mass or less, 40% by mass or less, 38% by mass or less, 35% by mass or less, or 32% by mass or less based on the total mass of the film-like adhesive. May be.
  • the content of the component (C) in the adhesive composition may be the same as the above range.
  • Component (D) Inorganic filler
  • the component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and the like.
  • examples thereof include aluminum borate whisker, boron nitride, silica and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (D) may be silica from the viewpoint of adjusting the melt viscosity.
  • the shape of the component (D) is not particularly limited, but may be spherical.
  • the average particle size of the component (D) may be 0.7 ⁇ m or less, and may be 0.6 ⁇ m or less, 0.5 ⁇ m or less, 0.4 ⁇ m or less, or 0.3 ⁇ m or less from the viewpoint of fluidity and storage elastic modulus. There may be.
  • the average particle size of the component (D) may be, for example, 0.01 ⁇ m or more.
  • the average particle size means a value obtained by converting from the BET specific surface area.
  • the content of the component (D) may be less than 50% by mass, 45% by mass or less, or 40% by mass or less, based on the total mass of the film-like adhesive. When the content of the component (D) is in such a range, thinning tends to be further possible.
  • the content of the component (D) may be 1% by mass or more, 5% by mass or more, 10% by mass or more, 15% by mass or more, or 20% by mass or more, based on the total mass of the film-shaped adhesive.
  • the content of the component (D) in the adhesive composition may be the same as the above range.
  • Component (E) Coupling agent
  • the component (E) may be a silane coupling agent.
  • the silane coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. Be done. These may be used individually by 1 type or in combination of 2 or more type.
  • Component (F) Curing accelerator
  • the component (F) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (F) may be imidazoles or a derivative thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the film-like adhesive may further contain other components.
  • other components include pigments, ion trapping agents, antioxidants and the like.
  • the total content of the component (E), the component (F), and other components is 0.1% by mass or more, 0.3% by mass or more, or 0.5 based on the total mass of the film-like adhesive. It may be 30% by mass or less, 20% by mass or less, 10% by mass or less, or 5% by mass or less.
  • the total content of the component (E), the component (F), and other components in the adhesive composition may be the same as in the above range.
  • the film-like adhesive 1 (adhesive film) shown in FIG. 1 contains a component (A), a component (B1), a component (B2), and a component (C), and a component added as needed.
  • the adhesive composition is formed into a film.
  • Such a film-like adhesive 1 can be formed by applying an adhesive composition to a support film.
  • a varnish (adhesive varnish) of the adhesive composition may be used.
  • the adhesive varnish is obtained by mixing or kneading the component (A), the component (B1), the component (B2), and the component (C), and the components added as necessary in a solvent.
  • the film-like adhesive 1 can be obtained by preparing the above, applying the obtained adhesive varnish to the support film, and removing the solvent by heating and drying.
  • the support film is not particularly limited as long as it can withstand the above-mentioned heat drying, and is, for example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyethylene naphthalate film, a polymethylpentene film, or the like. It may be there.
  • the support film may be a multilayer film in which two or more types are combined, or may have a surface treated with a mold release agent such as silicone or silica.
  • the thickness of the support film may be, for example, 10 to 200 ⁇ m or 20 to 170 ⁇ m.
  • Mixing or kneading can be performed by using a disperser such as a normal stirrer, a raft machine, a three-roll machine, or a ball mill, and combining these as appropriate.
  • a disperser such as a normal stirrer, a raft machine, a three-roll machine, or a ball mill, and combining these as appropriate.
  • the solvent used for preparing the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used.
  • a solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, xylene and the like.
  • the solvent may be methyl ethyl ketone or cyclohexanone from the viewpoint of drying speed and price.
  • a known method can be used, and for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method and the like are used. be able to.
  • the heating and drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, but may be 50 to 150 ° C. for 1 to 30 minutes.
  • the film-like adhesive 1 can be thinned, it can be suitably used in a manufacturing process of a semiconductor device in which a plurality of semiconductor elements are laminated.
  • the semiconductor device may be a stacked MCP or a three-dimensional NAND type memory.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing / die bonding integrated film.
  • the dicing / die bonding integrated film 10 shown in FIG. 2 includes a base material layer 2, an adhesive layer 3, and an adhesive layer 1A composed of the above-mentioned film-like adhesive 1 in this order.
  • the base material layer 2 and the pressure-sensitive adhesive layer 3 may be a dicing tape 4.
  • the laminating process on the semiconductor wafer is performed once, so that the work efficiency can be improved.
  • the dicing / die bonding integrated film may be in the form of a film, a sheet, a tape, or the like.
  • the dicing tape 4 includes a base material layer 2 and an adhesive layer 3 provided on the base material layer 2.
  • the base material layer 2 examples include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. If necessary, these base material layers 2 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment.
  • plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. If necessary, these base material layers 2 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment.
  • the pressure-sensitive adhesive layer 3 is a layer made of a pressure-sensitive adhesive.
  • the adhesive is not particularly limited as long as it has sufficient adhesive strength so that the semiconductor element does not scatter during dicing and has a low adhesive strength that does not damage the semiconductor element in the subsequent pickup process of the semiconductor element. Conventionally known ones can be used in the field of.
  • the pressure-sensitive adhesive may be either a pressure-sensitive type or a radiation-curable type.
  • the pressure-sensitive pressure-sensitive adhesive is a pressure-sensitive adhesive that exhibits a certain degree of stickiness with a short-time pressurization.
  • the radiation-curable pressure-sensitive adhesive is a pressure-sensitive adhesive having a property that the adhesiveness is lowered by irradiation with radiation (for example, ultraviolet rays).
  • the thickness of the dicing tape 4 may be 60 to 150 ⁇ m or 70 to 130 ⁇ m from the viewpoint of economy and handleability of the film.
  • the dicing / dicing-bonding integrated film 10 can be obtained, for example, by preparing a film-shaped adhesive 1 and a dicing tape 4, and laminating the film-shaped adhesive 1 and the adhesive layer 3 of the dicing tape 4. Further, in the dicing / die bonding integrated film 10, for example, the dicing tape 4 is prepared, and the adhesive composition (adhesive varnish) is applied to the dicing tape 4 in the same manner as in the method of forming the film-like adhesive 1 described above. It can also be obtained by applying it on the pressure-sensitive adhesive layer 3.
  • the dicing / dicing-bonding integrated film 10 is provided under predetermined conditions (for example, at room temperature (20 ° C.)) using a roll laminator, a vacuum laminator, or the like. It can be formed by laminating the film-like adhesive 1 on the dicing tape 4 in a heated state). Since the dicing / die bonding integrated film 10 can be continuously manufactured and is excellent in efficiency, it may be formed by using a roll laminator in a heated state.
  • the film-like adhesive and the dicing / die-bonding integrated film may be used in the manufacturing process of a semiconductor device, or may be used in a manufacturing process of a semiconductor device in which a plurality of semiconductor elements are laminated. good.
  • the adhesive layer of the film-like adhesive or the dicing / die-bonding integrated film is 0 on the semiconductor wafer or the semiconductor element (semiconductor chip) that has already been fragmented.
  • the film-like adhesive is also suitably used as an adhesive for adhering semiconductor elements to each other in a stacked MCP (for example, a three-dimensional NAND memory) which is a semiconductor device in which a plurality of semiconductor elements are laminated.
  • a stacked MCP for example, a three-dimensional NAND memory
  • the film-like adhesive is, for example, a protective sheet that protects the back surface of the semiconductor element of the flip-chip type semiconductor device, or a sealing sheet for sealing between the surface of the semiconductor element of the flip-chip type semiconductor device and the adherend. It can also be used as such.
  • the semiconductor device manufactured by using the film-like adhesive and the dicing / die bonding integrated film will be specifically described below with reference to the drawings.
  • semiconductor devices having various structures have been proposed, and the applications of the film-like adhesive and the dicing / die bonding integrated film of the present embodiment are not limited to the semiconductor devices having the structures described below. do not have.
  • FIG. 3 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the semiconductor device 100 shown in FIG. 3 includes a semiconductor element 11, a support member 12 on which the semiconductor element 11 is mounted, and an adhesive member 15.
  • the adhesive member 15 is provided between the semiconductor element 11 and the support member 12, and adheres the semiconductor element 11 and the support member 12.
  • the adhesive member 15 is a cured product of the adhesive composition (cured product of a film-like adhesive).
  • the connection terminal (not shown) of the semiconductor element 11 is electrically connected to the external connection terminal (not shown) via the wire 13 and is sealed by the sealing material 14.
  • FIG. 4 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the first-stage semiconductor element 11a is a support member 12 on which a terminal 16 is formed by an adhesive member 15a (a cured product of an adhesive composition (cured product of a film-like adhesive)).
  • the second-stage semiconductor element 11b is further adhered onto the first-stage semiconductor element 11a by an adhesive member 15b (cured product of adhesive composition (cured product of film-like adhesive)).
  • the connection terminals (not shown) of the first-stage semiconductor element 11a and the second-stage semiconductor element 11b are electrically connected to the external connection terminal via the wire 13 and sealed by the sealing material 14.
  • the semiconductor device 110 shown in FIG. 4 further includes another semiconductor device (11b) laminated on the surface of the semiconductor device (11a) in the semiconductor device 100 shown in FIG.
  • FIG. 5 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the semiconductor device 120 shown in FIG. 5 includes a support member 12 and semiconductor elements 11a, 11b, 11c, 11d laminated on the support member 12.
  • the four semiconductor elements 11a, 11b, 11c, and 11d are displaced from each other in the lateral direction (direction orthogonal to the stacking direction) due to connection with a connection terminal (not shown) formed on the surface of the support member 12. It is laminated at the position (see FIG. 5).
  • the semiconductor element 11a is adhered to the support member 12 by an adhesive member 15a (a cured product of an adhesive composition (cured product of a film-like adhesive)), and is also formed between the three semiconductor elements 11b, 11c, and 11d.
  • an adhesive member 15a a cured product of an adhesive composition (cured product of a film-like adhesive)
  • Adhesive members 15b, 15c, and 15d are interposed. It can be said that the semiconductor device 120 shown in FIG. 5 further includes other semiconductor devices (11b, 11c, 11d) laminated on the surface of the semiconductor device (11a) in the semiconductor device 100 shown in FIG. ..
  • the semiconductor device has been described in detail with respect to the embodiment of the present disclosure, the present disclosure is not limited to the above embodiment.
  • FIG. 5 a semiconductor device in which four semiconductor elements are laminated is illustrated, but the number of laminated semiconductor elements is not limited to this.
  • FIG. 5 a semiconductor device in which semiconductor elements are stacked at positions deviated from each other in the lateral direction (direction orthogonal to the stacking direction) is illustrated, but the semiconductor elements are laminated in the lateral direction (perpendicular to the stacking direction). It may be a semiconductor device of a mode in which the semiconductor devices are laminated at positions that are not displaced from each other in the direction).
  • the semiconductor device (semiconductor package) shown in FIGS. 3, 4, and 5 is between a semiconductor element and a support member, or a semiconductor element (first semiconductor element) and a semiconductor element (second semiconductor element). Obtained by a method comprising a step of interposing the above-mentioned film-like adhesive between the semiconductor element and the support member, or adhering the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element). be able to. More specifically, the above-mentioned film-like adhesive is interposed between the semiconductor element and the support member, or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element). These can be obtained by heat-pressing and bonding the two, and then, if necessary, a wire bonding step, a sealing step with a sealing material, a heating and melting step including reflow with solder, and the like.
  • a method may be used in which a semiconductor element with an adhesive piece is manufactured in advance and then attached to a support member or a semiconductor element.
  • the method for manufacturing a semiconductor device using a dicing / die bonding integrated film shown in FIG. 2 is not limited to the method for manufacturing a semiconductor device described below.
  • a plurality of semiconductor devices are formed, for example, by attaching a semiconductor wafer to the adhesive layer of the above-mentioned dicing / die bonding integrated film (lamination step) and cutting the semiconductor wafer to which the adhesive layer is attached.
  • a method including a step of manufacturing a semiconductor element with a separated adhesive piece (dicing step) and a step of adhering the semiconductor element with an adhesive piece to a support member via an adhesive piece (first bonding step). be able to.
  • the method for manufacturing a semiconductor device may further include a step (second bonding step) of adhering another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via the adhesive piece. ..
  • the laminating step is a step of crimping a semiconductor wafer to the adhesive layer 1A in the dicing / die bonding integrated film 10 and adhering and holding the semiconductor wafer. This step may be performed while pressing with a pressing means such as a crimping roll.
  • Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like.
  • the dicing process is a process for dicing a semiconductor wafer.
  • the semiconductor wafer can be cut into a predetermined size to manufacture a plurality of individualized semiconductor devices with adhesive pieces. Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method. Further, in this step, for example, a method called a full cut in which a notch is provided up to the dicing tape, a method in which a half notch is provided in the semiconductor wafer, and the semiconductor wafer is cooled and pulled to divide, a method of dividing by a laser, and the like can be adopted.
  • the dicing apparatus used in this step is not particularly limited, and conventionally known dicing apparatus can be used.
  • Examples of semiconductor elements include ICs (integrated circuits) and the like.
  • a lead frame such as a 42 alloy lead frame or a copper lead frame
  • a plastic film such as a polyimide resin or an epoxy resin
  • a base material such as a glass non-woven fabric is impregnated with a plastic such as a polyimide resin or an epoxy resin and cured.
  • Modified plastic film ceramics such as alumina and the like can be mentioned.
  • the semiconductor device manufacturing method may include a pickup process, if necessary.
  • the pick-up step is a step of picking up the semiconductor element with the adhesive piece in order to peel off the semiconductor element with the adhesive piece bonded and fixed to the dicing / die-bonding integrated film.
  • the pickup method is not particularly limited, and various conventionally known methods can be adopted. Examples of such a method include a method in which individual semiconductor elements with adhesive pieces are pushed up from the dicing / die-bonding integrated film side by a needle, and the pushed-up semiconductor elements with adhesive pieces are picked up by a pickup device.
  • the pickup can be performed after irradiating the pressure-sensitive adhesive layer with radiation.
  • the adhesive force of the adhesive layer on the adhesive piece is reduced, and the semiconductor element with the adhesive piece can be easily peeled off. As a result, pickup is possible without damaging the semiconductor element with the adhesive piece.
  • the first bonding step is a step of adhering a semiconductor element with an adhesive piece formed by dicing to a support member for mounting the semiconductor element via the adhesive piece.
  • the method for manufacturing a semiconductor device includes, if necessary, a step (second bonding step) of adhering another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via the adhesive piece. May be. Both can be bonded by crimping.
  • the crimping conditions are not particularly limited and can be appropriately set as needed.
  • the crimping condition may be, for example, a temperature of 80 to 160 ° C., a load of 5 to 15 N, and a time of 1 to 10 seconds.
  • As the support member the same support member as described above can be exemplified.
  • the method for manufacturing a semiconductor device may include a step (thermosetting step) of further thermosetting the adhesive piece, if necessary.
  • a step (thermosetting step) of further thermosetting the adhesive piece By further heat-curing the semiconductor element and the support member, or the adhesive piece adhering the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), more firmly adhering and fixing is possible. Will be.
  • pressure may be applied at the same time to cure.
  • the heating temperature in this step can be appropriately changed depending on the constituent components of the adhesive piece.
  • the heating temperature may be, for example, 60 to 200 ° C.
  • the temperature or pressure may be changed step by step.
  • the method for manufacturing a semiconductor device includes, if necessary, a step (wire bonding step) of electrically connecting the tip of a terminal portion (inner lead) of a support member and an electrode pad on a semiconductor element with a bonding wire. May be good.
  • a bonding wire for example, a gold wire, an aluminum wire, a copper wire, or the like is used.
  • the temperature at which wire bonding is performed may be in the range of 80 to 250 ° C or 80 to 220 ° C.
  • the heating time may be from a few seconds to a few minutes.
  • Wire bonding may be performed by a combination of vibration energy by ultrasonic waves and crimping energy by applied pressurization in a state of being heated within the above temperature range.
  • the method for manufacturing a semiconductor device may include a step (sealing step) of sealing the semiconductor element with a sealing material, if necessary. This step is performed to protect the semiconductor element or the bonding wire mounted on the support member. This step can be performed by molding a sealing resin (sealing resin) with a mold.
  • the sealing resin may be, for example, an epoxy-based resin.
  • the support member and the residue are embedded by the heat and pressure at the time of sealing, and it is possible to prevent peeling due to air bubbles at the bonding interface.
  • the semiconductor device manufacturing method may include a step (post-curing step) of completely curing the under-cured sealing resin in the sealing step. Even if the adhesive piece is not heat-cured in the sealing step, the adhesive piece can be heat-cured together with the curing of the sealing resin to enable adhesive fixing in this step.
  • the heating temperature in this step can be appropriately set depending on the type of the sealing resin, and may be, for example, in the range of 165 to 185 ° C., and the heating time may be about 0.5 to 8 hours.
  • the method for manufacturing a semiconductor device may include a step (heat melting step) of heating a semiconductor element with an adhesive piece adhered to a support member using a reflow furnace.
  • a resin-sealed semiconductor device may be surface-mounted on the support member.
  • the surface mount method include reflow soldering in which solder is previously supplied onto a printed wiring board and then heated and melted by warm air or the like to perform soldering.
  • the heating method include hot air reflow and infrared reflow.
  • the heating method may be one that heats the whole or one that heats a local part.
  • the heating temperature may be, for example, in the range of 240 to 280 ° C.
  • (B1) Component First curing agent (B1-1) PSM-4326 (trade name, manufactured by Gun Ei Chemical Industry Co., Ltd., phenol novolac type phenol resin, hydroxyl group equivalent: 105 g / eq) having a softening point of 90 ° C. or higher. , Softening point: 120 ° C)
  • D Ingredient: Inorganic filler (D-1) SC2050-HLG (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size: 0.50 ⁇ m) (D-2) SC1030-HJA (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size: 0.30 ⁇ m) (D-3) R972 (trade name, manufactured by Nippon Aerosil Co., Ltd., silica particles, average particle size: 0.016 ⁇ m)
  • E Ingredient: Coupling agent (E-1) A-189 (trade name, manufactured by Nippon Unicar Co., Ltd., ⁇ -mercaptopropyltrimethoxysilane) (E-2) A-1160 (trade name, manufactured by Nippon Unicar Co., Ltd., ⁇ -ureidopropyltriethoxysilane)
  • the prepared adhesive varnish was filtered through a 100 mesh filter and vacuum defoamed.
  • a polyethylene terephthalate (PET) film having been subjected to a mold release treatment having a thickness of 38 ⁇ m was prepared, and an adhesive varnish after vacuum defoaming was applied onto the PET film.
  • the applied adhesive varnish is heat-dried at 90 ° C. for 5 minutes and then at 140 ° C. for 2 minutes to obtain the film-like adhesives of Examples 1 to 9 and Comparative Examples 1 to 3 in the B stage state. Obtained.
  • the thickness of the film-shaped adhesive was adjusted to 7 ⁇ m depending on the amount of the adhesive varnish applied.
  • the obtained dicing sample was cut using a fully automatic dicing DFD-6361 (manufactured by Disco Corporation).
  • the cutting was performed by a step cutting method using two blades, and dicing blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by Disco Corporation) were used.
  • the cutting conditions were a blade rotation speed of 4000 rotations / minute, a cutting speed of 50 mm / sec, and a chip size of 7.5 mm ⁇ 7.5 mm.
  • the first step was cut so that the semiconductor wafer remained about 30 ⁇ m in the thickness direction, and then the second step was cut so that the dicing tape had a notch of about 20 ⁇ m.
  • the semiconductor element (semiconductor chip) to be picked up was picked up using the pickup collet.
  • I pushed it up using one pin in the center.
  • the push-up speed was set to 20 mm / s, and the push-up height was set to 450 ⁇ m. In this way, a semiconductor device with an adhesive piece was obtained.
  • the wire bonding property was evaluated by measuring the storage elastic modulus at 150 ° C. after curing of the film-like adhesives (adhesive compositions) of Examples 1 to 9 and Comparative Examples 1 to 3.
  • the storage elastic modulus was measured by the following method. That is, a plurality of film-like adhesives having a thickness of 7 ⁇ m were laminated to make the thickness about 300 ⁇ m, and this was cut out to a size of 4 mm ⁇ 50 mm to prepare a sample for measurement.
  • the prepared sample was cured at 170 ° C. for 1 hour, measured under the following measurement conditions using a dynamic viscoelasticity measuring device DVE-V4 (trade name, manufactured by Rheology), and stored elastic modulus at 150 ° C.
  • DVE-V4 dynamic viscoelasticity measuring device
  • the value of the rate was taken as the storage elastic modulus at 150 ° C.
  • the storage elastic modulus was 23 MPa or more, it was evaluated as "A” as having excellent wire bonding property, and when the storage elastic modulus was less than 23 MPa, it was evaluated as "B".
  • Tables 1 and 2 show the storage elastic modulus and the evaluation result at 150 ° C. after curing. (Measurement condition) ⁇ Distance between chucks: 20 mm ⁇ Temperature rise rate: 5 ° C / min ⁇ Measuring jig: Tension measuring jig ⁇ Frequency: 10Hz ⁇ Load: Automatic static load
  • the shear viscosity was measured by the following method. That is, a plurality of 7 ⁇ m-thick film-like adhesives of Examples 1 to 9 and Comparative Examples 1 to 3 are laminated to make the thickness about 300 ⁇ m, and the sample is punched into a circle having a diameter of 9 mm to obtain a sample for measurement. Obtained. A circular aluminum plate jig having a diameter of 8 mm was set in the dynamic viscoelastic device ARES (trade name, manufactured by TA Instruments), and a sample was further set on the jig. Then, the temperature was raised to 130 ° C.
  • ARES dynamic viscoelastic device
  • the film-like adhesives of Examples 1 to 9 have all the thinning properties, uneven embedding property, and wire bonding property as compared with the film-like adhesives of Comparative Examples 1 to 3. It was excellent in terms of points. From these results, it was confirmed that the film-like adhesive of the present disclosure can be made into a thin film, and is excellent in uneven embedding property and wire bonding property.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

La présente divulgation concerne un adhésif de type film. En ce qui concerne cet adhésif de type film, la viscosité de cisaillement à 120 °C est inférieure ou égale à 17 000 Pa·s, le module élastique de stockage à 150 °C est supérieur ou égal à 23 MPa après avoir été durci à 170 °C pendant une heure, et l'épaisseur est inférieure ou égale à 30 μm. La présente divulgation concerne également : un film de découpage en dés/fixation de puce intégré qui utilise cet adhésif de type film ; un dispositif à semi-conducteur ; et un procédé de production de ce dispositif à semi-conducteur. La présente divulgation concerne également un procédé de production d'un dispositif à semi-conducteur, ledit procédé utilisant ce film de découpage en dés/fixation de puce intégré.
PCT/JP2022/000142 2021-01-08 2022-01-05 Adhésif de type film, film de découpage en dés/fixation de puce intégré, dispositif à semi-conducteur et son procédé de production WO2022149582A1 (fr)

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JP2022574060A JPWO2022149582A1 (fr) 2021-01-08 2022-01-05
CN202280008972.8A CN116685654A (zh) 2021-01-08 2022-01-05 膜状黏合剂、切割晶粒接合一体型膜、以及半导体装置及其制造方法
KR1020237022627A KR20230129992A (ko) 2021-01-08 2022-01-05 필름상 접착제, 다이싱·다이본딩 일체형 필름, 및 반도체장치 및 그 제조 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024189855A1 (fr) * 2023-03-15 2024-09-19 株式会社レゾナック Adhésif en forme de film, film intégral de découpage en dés/liaison de puce, et dispositif à semi-conducteur et son procédé de fabrication

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231469A (ja) * 2008-03-21 2009-10-08 Hitachi Chem Co Ltd ダイボンドフィルム
JP2011052109A (ja) * 2009-09-01 2011-03-17 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
JP2013256574A (ja) * 2012-06-12 2013-12-26 Hitachi Chemical Co Ltd フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP2014175459A (ja) * 2013-03-08 2014-09-22 Hitachi Chemical Co Ltd 半導体装置及び半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
KR20200006197A (ko) 2012-03-08 2020-01-17 히타치가세이가부시끼가이샤 접착시트 및 반도체 장치의 제조 방법
CN112385016A (zh) 2018-07-11 2021-02-19 昭和电工材料株式会社 半导体装置的制造方法、热固性树脂组合物及切晶粘晶一体型膜

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2009231469A (ja) * 2008-03-21 2009-10-08 Hitachi Chem Co Ltd ダイボンドフィルム
JP2011052109A (ja) * 2009-09-01 2011-03-17 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
JP2013256574A (ja) * 2012-06-12 2013-12-26 Hitachi Chemical Co Ltd フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP2014175459A (ja) * 2013-03-08 2014-09-22 Hitachi Chemical Co Ltd 半導体装置及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024189855A1 (fr) * 2023-03-15 2024-09-19 株式会社レゾナック Adhésif en forme de film, film intégral de découpage en dés/liaison de puce, et dispositif à semi-conducteur et son procédé de fabrication
WO2024190884A1 (fr) * 2023-03-15 2024-09-19 株式会社レゾナック Adhésif en film, film intégré de découpage en dés/fixation de puce, et dispositif à semi-conducteur et son procédé de production

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JPWO2022149582A1 (fr) 2022-07-14
CN116685654A (zh) 2023-09-01
KR20230129992A (ko) 2023-09-11

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