WO2020158490A1 - Adhésif en film, feuille adhésive, dispositif à semiconducteur et son procédé de fabrication - Google Patents

Adhésif en film, feuille adhésive, dispositif à semiconducteur et son procédé de fabrication Download PDF

Info

Publication number
WO2020158490A1
WO2020158490A1 PCT/JP2020/001788 JP2020001788W WO2020158490A1 WO 2020158490 A1 WO2020158490 A1 WO 2020158490A1 JP 2020001788 W JP2020001788 W JP 2020001788W WO 2020158490 A1 WO2020158490 A1 WO 2020158490A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive
film
semiconductor element
semiconductor
film adhesive
Prior art date
Application number
PCT/JP2020/001788
Other languages
English (en)
Japanese (ja)
Inventor
奏美 中村
慎太郎 橋本
由衣 國土
紘平 谷口
恒則 大平
Original Assignee
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to SG11202108023SA priority Critical patent/SG11202108023SA/en
Priority to CN202080011016.6A priority patent/CN113348539A/zh
Priority to KR1020217024426A priority patent/KR102693643B1/ko
Publication of WO2020158490A1 publication Critical patent/WO2020158490A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a film adhesive, an adhesive sheet, a semiconductor device and a method for manufacturing the same.
  • stacked MCPs Multi Chip Packages
  • semiconductor elements semiconductor elements (semiconductor chips) are stacked in multiple stages
  • memory semiconductor packages for mobile phones and mobile audio devices.
  • higher speed, higher density, and higher integration of semiconductor packages are being promoted.
  • the speed has been increased by using copper as a wiring material for semiconductor chip circuits.
  • lead frames and the like made of copper are being used from the viewpoint of improving the reliability of connection to a complicated mounting board and accelerating the exhaust heat from the semiconductor package.
  • the semiconductor package has an electrical characteristic. Tends to be difficult to secure. In particular, in a semiconductor package in which semiconductor chips are laminated in multiple stages, copper ions generated by corrosion move inside the adhesive, and electrical signal loss tends to occur within the semiconductor chips or between semiconductor chips/semiconductor chips.
  • Adhesives that capture copper ions generated in semiconductor packages are being studied from the viewpoint of preventing loss of electrical signals.
  • a thermoplastic resin having an epoxy group and not having a carboxyl group and a heterocyclic compound containing a tertiary nitrogen atom as a ring atom are formed, and a complex is formed with a cation.
  • an adhesive sheet for producing a semiconductor device which comprises the organic complex forming compound.
  • the main object of the present invention is to provide a film-like adhesive capable of sufficiently suppressing the problems associated with the movement of copper ions in the adhesive.
  • One aspect of the present invention is a film-like adhesive for adhering a semiconductor element and a support member on which the semiconductor element is mounted, the film-like adhesive containing a thermosetting resin component and a leveling agent. , A film adhesive is provided.
  • the reason why the migration of copper ions in the adhesive can be sufficiently suppressed by using the leveling agent is not always clear, but the present inventors have found that the leveling agent intervenes in the adhesive surface layer, whereby This is because the uptake of copper ions itself is suppressed.
  • the leveling agent may be a compound having a siloxane structure.
  • the thermosetting resin component may include a thermosetting resin, a curing agent, and an acrylic rubber.
  • the thickness of the film adhesive may be 50 ⁇ m or less.
  • Another aspect of the present invention provides an adhesive sheet including a base material and the above-mentioned film adhesive provided on one surface of the base material.
  • the substrate may be a dicing tape.
  • Another aspect of the present invention includes a semiconductor element, a support member on which the semiconductor element is mounted, and an adhesive member provided between the semiconductor element and the support member for adhering the semiconductor element and the support member to each other.
  • a semiconductor device which is a cured product of the above film adhesive.
  • the support member may include a member made of copper.
  • Another aspect of the present invention provides a method for manufacturing a semiconductor device, which includes a step of bonding a semiconductor element and a supporting member using the above film adhesive.
  • Another aspect of the present invention is to separate the semiconductor wafer into a plurality of individual pieces by adhering the film adhesive of the above-mentioned adhesive sheet to the semiconductor wafer and cutting the semiconductor wafer to which the film adhesive is attached.
  • a method for manufacturing a semiconductor device which comprises a step of producing a semiconductor element with a film adhesive and a step of adhering the semiconductor element with a film adhesive to a support member.
  • the method for manufacturing a semiconductor device may further include a step of heating the semiconductor element with the film adhesive attached to the support member using a reflow oven.
  • a film-like adhesive capable of sufficiently suppressing a defect due to movement of copper ions in the adhesive.
  • an adhesive sheet and a semiconductor device using such a film adhesive are provided.
  • a method for manufacturing a semiconductor device using a film adhesive or an adhesive sheet is provided.
  • the numerical range indicated by “to” indicates a range including the numerical values before and after “to” as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another stepwise described numerical range.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • (meth)acrylate means acrylate or corresponding methacrylate.
  • the film adhesive is a film adhesive for adhering a semiconductor element and a supporting member on which the semiconductor element is mounted, and the film adhesive is a thermosetting resin component and a leveling agent. Contains and.
  • the film adhesive can be obtained by forming an adhesive composition containing (A) a thermosetting resin component and (B) a leveling agent into a film.
  • the film adhesive and the adhesive composition may be capable of undergoing a semi-cured (B stage) state and a fully cured (C stage) state after a curing treatment.
  • thermosetting resin component may include (A1) thermosetting resin, (A2) curing agent, and (A3) elastomer in one embodiment.
  • Thermosetting resin may be an epoxy resin from the viewpoint of adhesiveness.
  • the epoxy resin can be used without particular limitation as long as it has an epoxy group in the molecule.
  • Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F novolac type epoxy resin.
  • the component (A1) may be a cresol novolac type epoxy resin, a phenol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoints of tackiness and flexibility of the film. Good.
  • the epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g/eq or 110 to 290 g/eq. When the epoxy equivalent of the epoxy resin is in such a range, it tends to be possible to secure fluidity while maintaining the bulk strength of the film adhesive.
  • the component (A2) may be a phenol resin that can serve as a hardener for the epoxy resin.
  • the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and/or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde.
  • Novolak-type phenol resin obtained by condensation or co-condensation with the compound having an aldehyde group under an acidic catalyst allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenols such as phenol, and/or
  • a phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, a naphthol aralkyl resin, and the like can be given. These may be used alone or in combination of two or more.
  • the phenol resin may be a phenol novolac type phenol resin or a naphthol aralkyl resin.
  • the hydroxyl equivalent of the phenolic resin may be 70 g/eq or more or 70 to 300 g/eq.
  • the storage elastic modulus of the film tends to be further improved, and when it is 300 g/eq or less, it is possible to prevent problems due to foaming, outgassing, etc. ..
  • the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenol resin is 0.30/0.70 to 0.70/0.30. , 0.35/0.65-0.65/0.35, 0.40/0.60-0.60/0.40, or 0.45/0.55-0.55/0.45 You can When the equivalent ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70/0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
  • the total content of the component (A1) and the component (A2) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 15 to 30 parts by mass based on 100 parts by mass of the total amount of the component (A). You can When the total content of the component (A1) and the component (A2) is 5 parts by mass or more, the elastic modulus tends to be improved by crosslinking. When the total content of the component (A1) and the component (A2) is 50 parts by mass or less, the film handleability tends to be maintained.
  • the component (A3) may be an acrylic rubber having a structural unit derived from a (meth)acrylic acid ester as a main component.
  • the content of the structural unit derived from the (meth)acrylic acid ester in the component (A3) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of the structural unit.
  • the acrylic rubber may contain a structural unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, and a carboxyl group.
  • the glass transition temperature (Tg) of the component (A3) may be -50 to 50°C or -30 to 30°C.
  • Tg of the component (A3) is ⁇ 50° C. or higher, the flexibility of the adhesive tends to be prevented from becoming too high. As a result, the film adhesive can be easily cut during wafer dicing, and burrs can be prevented from occurring.
  • Tg of the component (A3) is 50° C. or less, the flexibility of the adhesive tends to be suppressed from decreasing. This tends to make it easier to fill voids when the film adhesive is attached to the wafer. In addition, it becomes possible to prevent chipping at the time of dicing due to deterioration of the adhesiveness of the wafer.
  • the glass transition temperature (Tg) means a value measured by using a DSC (Thermal Differential Scanning Calorimeter) (for example, Thermo Plus 2 manufactured by Rigaku Corporation).
  • the weight average molecular weight (Mw) of the component (A3) may be 100,000 to 3,000,000 or 200,000 to 2,000,000.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene.
  • Examples of commercial products of the component (A3) include SG-P3, SG-80H, HTR-860P-3CSP (all manufactured by Nagase Chemtex Co., Ltd.).
  • the content of the component (A3) may be 50 to 95 parts by mass, 60 to 90 parts by mass, or 70 to 85 parts by mass based on 100 parts by mass of the total amount of the component (A).
  • the content of the component (A3) is in such a range, the movement (permeation) of copper ions in the adhesive tends to be more sufficiently suppressed.
  • thermosetting resin component (A) is an elastomer having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, and a carboxyl group, and a curing agent capable of reacting with the crosslinkable functional group. May be included.
  • a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, and a carboxyl group
  • a curing agent capable of reacting with the crosslinkable functional group May be included.
  • Examples of the combination of the elastomer having a crosslinkable functional group and the curing agent capable of reacting with the crosslinkable functional group include a combination of an acrylic rubber having an epoxy group and a phenol resin.
  • Component (B) Leveling agent (surface conditioner) When the film adhesive contains the component (B), it is possible to suppress the uptake of copper ions in the surface layer of the adhesive.
  • the component (B) is not particularly limited as long as it can adjust the surface tension of the film adhesive, but may be a compound having a siloxane structure (in other words, polysiloxane or silicone).
  • Examples of the component (B) include polyether-modified, polyester-modified, aralkyl-modified, and phenyl-modified polysiloxanes (silicones). These may be used alone or in combination of two or more.
  • Examples of commercially available compounds having a siloxane structure include BYK-307, BYK-310, BYK-333, BYK-377, BYK-378 (all are trade names, manufactured by BYK Japan KK), KF-945. KF-6204 (all trade names, manufactured by Shin-Etsu Chemical Co., Ltd.) and the like can be mentioned.
  • the content of the component (B) is 0.1 to 5.0 parts by mass, 0.15 to 2.0 parts by mass, or 0.2 to 1. parts by mass based on 100 parts by mass of the total amount of the component (A). It may be 5 parts by weight.
  • the content of the component (B) is 0.1 parts by mass or more, the incorporation of copper ions into the adhesive surface layer tends to be more suppressed.
  • the film adhesive may further contain (C) an inorganic filler, (D) a coupling agent, (E) a curing accelerator and the like.
  • Component (C) Inorganic filler
  • the component (C) for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, Examples thereof include aluminum borate whiskers, boron nitride and silica. These may be used alone or in combination of two or more.
  • the component (C) may be silica from the viewpoint of adjusting the melt viscosity.
  • the shape of the component (C) is not particularly limited, but may be spherical.
  • the average particle size of the component (C) may be 0.01 to 1 ⁇ m, 0.01 to 0.8 ⁇ m, or 0.03 to 0.5 ⁇ m from the viewpoint of fluidity.
  • the average particle diameter means a value obtained by converting from the BET specific surface area.
  • the content of the component (C) is 0.1 to 50 parts by mass, 0.1 to 30 parts by mass, or 0.1 to 20 parts by mass based on 100 parts by mass of the total amount of the component (A). Good.
  • the component (D) may be a silane coupling agent.
  • the silane coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane and the like. To be These may be used alone or in combination of two or more.
  • Component (E) Curing Accelerator
  • the component (E) is not particularly limited, and those generally used can be used.
  • Examples of the component (E) include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more.
  • the component (E) may be an imidazole or a derivative thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used alone or in combination of two or more.
  • the film adhesive may further contain other components.
  • other components include pigments, ion trapping agents, antioxidants and the like.
  • the content of the component (D), the component (E), and the other components may be 0 to 30 parts by mass with respect to 100 parts by mass of the total mass of the component (A).
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a film adhesive.
  • the film adhesive 1 (adhesive film) shown in FIG. 1 is obtained by molding an adhesive composition into a film.
  • the film adhesive 1 may be in a semi-cured (B stage) state.
  • Such a film adhesive 1 can be formed by applying an adhesive composition to a support film.
  • the varnish of the adhesive composition adheresive varnish
  • the components (A) and (B), and other components that are added as necessary are mixed in a solvent, and the mixed liquid is mixed or kneaded.
  • the adhesive varnish is prepared, the adhesive varnish is applied to the support film, and the solvent is heated and dried to remove the adhesive to form the film adhesive 1.
  • the support film is not particularly limited as long as it can withstand the above heat drying, for example, polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyether naphthalate film, polymethylpentene film, etc. May be
  • the support film may be a multilayer film in which two or more kinds are combined, and the surface thereof may be treated with a release agent such as a silicone-based or silica-based release agent.
  • the thickness of the support film may be, for example, 10 to 200 ⁇ m or 20 to 170 ⁇ m.
  • the mixing or kneading can be performed by using an ordinary agitator, a raider, a three-roller, a ball mill, or other disperser, and appropriately combining these.
  • the solvent used for preparing the adhesive varnish is not limited as long as it can uniformly dissolve, knead or disperse each component, and conventionally known solvents can be used.
  • a solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, toluene and xylene.
  • the solvent may be methyl ethyl ketone, cyclohexanone or the like because of its high drying rate and low price.
  • a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.
  • the heating and drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, but heating and drying can be performed at 50 to 150° C. for 1 to 30 minutes.
  • the thickness of the film adhesive may be 50 ⁇ m or less.
  • the thickness of the film-like adhesive is 50 ⁇ m or less, the distance between the semiconductor element and the supporting member mounting the semiconductor element becomes short, so that defects due to copper ions tend to occur easily. Since the film adhesive according to the present embodiment can sufficiently suppress the movement (permeation) of copper ions in the adhesive, the thickness thereof can be 50 ⁇ m or less.
  • the thickness of the film adhesive 1 may be 40 ⁇ m or less, 30 ⁇ m or less, 20 ⁇ m or less, or 15 ⁇ m or less.
  • the lower limit of the thickness of the film adhesive 1 is not particularly limited, but may be 1 ⁇ m or more, for example.
  • the copper ion permeation time of the film adhesive 1 (that is, the cured product of the film adhesive) in a completely cured (C stage) state may be 200 minutes or longer, and 200 minutes or longer, 300 minutes or longer, or 500 minutes. It may be more than. Problems due to copper ions tend to occur during high temperature processing such as a reflow process. Therefore, it is predicted that when the state of complete curing (C stage) is 200 minutes or more, it is more difficult for defects due to copper ions to occur.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of the adhesive sheet.
  • the adhesive sheet 100 shown in FIG. 2 includes a base material 2 and a film adhesive 1 provided on the base material 2.
  • FIG. 3 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
  • the adhesive sheet 110 shown in FIG. 3 includes a base material 2, a film adhesive 1 provided on the base material 2, and a cover film provided on the surface of the film adhesive 1 opposite to the base material 2. 3 and 3.
  • the base material 2 is not particularly limited, but may be a base material film.
  • the base film may be similar to the support film described above.
  • the cover film 3 is used to prevent damage or contamination of the film adhesive, and may be, for example, a polyethylene film, a polypropylene film, a surface release agent treated film, or the like.
  • the thickness of the cover film 3 may be, for example, 15 to 200 ⁇ m or 70 to 170 ⁇ m.
  • the adhesive sheets 100 and 110 can be formed by applying an adhesive composition to a base film, similar to the method of forming the film adhesive described above.
  • the method of applying the adhesive composition to the substrate 2 may be the same as the method of applying the adhesive composition to the support film.
  • the adhesive sheet 110 can be obtained by further laminating the cover film 3 on the film adhesive 1.
  • the adhesive sheets 100 and 110 may be formed by using a film-shaped adhesive agent prepared in advance.
  • the adhesive sheet 100 can be formed by laminating under a predetermined condition (for example, room temperature (20° C.) or a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be continuously manufactured and is excellent in efficiency, it may be formed using a roll laminator in a heated state.
  • the adhesive sheet is a dicing/die bonding integrated adhesive sheet in which the base material 2 is a dicing tape.
  • the process of laminating on the semiconductor wafer is performed once, so that the work efficiency can be improved.
  • the dicing tape examples include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film and polyimide film. Further, the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment and etching treatment, if necessary.
  • the dicing tape may have adhesiveness. Such a dicing tape may be one in which the above-mentioned plastic film is provided with adhesiveness, or one in which the above-mentioned plastic film is provided with an adhesive layer.
  • the pressure-sensitive adhesive layer may be either a pressure-sensitive type or a radiation-curable type, has a sufficient adhesive force so that the semiconductor element does not scatter during dicing, and does not damage the semiconductor element in the subsequent semiconductor element pickup step.
  • a pressure-sensitive type or a radiation-curable type
  • has a sufficient adhesive force so that the semiconductor element does not scatter during dicing, and does not damage the semiconductor element in the subsequent semiconductor element pickup step.
  • the thickness of the dicing tape may be 60 to 150 ⁇ m or 70 to 130 ⁇ m from the viewpoints of economy and handleability of the film.
  • FIG. 4 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
  • FIG. 5 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
  • the adhesive sheet 120 shown in FIG. 4 includes the dicing tape 7, the pressure-sensitive adhesive layer 6, and the film adhesive 1 in this order.
  • the adhesive sheet 130 shown in FIG. 5 includes the dicing tape 7 and the film adhesive 1 provided on the dicing tape 7.
  • the adhesive sheet 120 can be obtained, for example, by providing the pressure-sensitive adhesive layer 6 on the dicing tape 7 and further laminating the film adhesive 1 on the pressure-sensitive adhesive layer 6.
  • the adhesive sheet 130 can be obtained, for example, by bonding the dicing tape 7 and the film adhesive 1 together.
  • the film-like adhesive and the adhesive sheet may be used for manufacturing a semiconductor device, and the film-like adhesive and the dicing tape are applied to a semiconductor wafer or a semiconductor element (semiconductor chip) which has already been diced at 0° C. After pasting at ⁇ 90°C, the film-shaped adhesive-attached semiconductor element is obtained by cutting with a rotary blade, laser or stretching, and then the film-shaped adhesive-attached semiconductor element is applied to an organic substrate, a lead frame, or another semiconductor. It may be used for manufacturing a semiconductor device including a step of adhering on an element.
  • semiconductor wafers include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.
  • the film adhesive and the adhesive sheet include semiconductor elements such as IC and LSI, lead frames such as 42 alloy lead frame and copper lead frame; plastic films such as polyimide resin and epoxy resin; It can be used as an adhesive for die bonding for bonding a material impregnated and cured with a plastic such as an epoxy resin; a semiconductor mounting support member such as ceramics such as alumina.
  • the film adhesive and the adhesive sheet are also suitably used as an adhesive for adhering semiconductor elements to each other in a Stacked-PKG having a structure in which a plurality of semiconductor elements are stacked.
  • one semiconductor element serves as a support member on which the semiconductor element is mounted.
  • the film adhesive and the adhesive sheet are, for example, a protective sheet for protecting the back surface of the semiconductor element of the flip-chip type semiconductor device, and a material for sealing between the surface of the semiconductor element of the flip-chip type semiconductor device and the adherend. It can also be used as a sealing sheet or the like.
  • a semiconductor device manufactured using a film adhesive will be specifically described with reference to the drawings.
  • semiconductor devices having various structures have been proposed, and the application of the film adhesive according to the present embodiment is not limited to the semiconductor device having the structure described below.
  • FIG. 6 is a schematic sectional view showing an embodiment of a semiconductor device.
  • the semiconductor device 200 shown in FIG. 6 is provided between the semiconductor element 9, the support member 10 on which the semiconductor element 9 is mounted, and the semiconductor element 9 and the support member 10, and is bonded to bond the semiconductor element 9 and the support member 10. And a member (cured product 1c of film adhesive).
  • a connection terminal (not shown) of the semiconductor element 9 is electrically connected to an external connection terminal (not shown) via a wire 11 and sealed by a sealing material 12.
  • FIG. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the first-stage semiconductor element 9a is bonded to the support member 10 on which the terminal 13 is formed by an adhesive member (cured material 1c of film adhesive), and the first-stage semiconductor element 9a.
  • the semiconductor element 9b of the second stage is further adhered to the top by an adhesive member (cured product 1c of film adhesive).
  • the connection terminals (not shown) of the semiconductor element 9 a in the first stage and the semiconductor element 9 b in the second stage are electrically connected to the external connection terminals via the wires 11 and sealed by the sealing material 12.
  • the film adhesive according to the present embodiment can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.
  • the semiconductor device (semiconductor package) shown in FIGS. 6 and 7 has, for example, a film adhesive interposed between a semiconductor element and a support member or between semiconductor elements and heated and pressure-bonded to each other. Are bonded, and then, if necessary, a wire bonding step, a sealing step with a sealing material, a heating and melting step including reflow with solder, and the like.
  • the heating temperature in the thermocompression bonding step is usually 20 to 250° C.
  • the load is usually 0.1 to 200 N
  • the heating time is usually 0.1 to 300 seconds.
  • the supporting member or It may be a method of attaching to a semiconductor element.
  • the support member may include a member made of copper.
  • a member made of copper is used as a constituent member of the semiconductor device. However, it is possible to reduce the influence of copper ions generated from the member, and it is possible to sufficiently suppress the occurrence of electrical defects due to copper ions.
  • the member made of copper for example, a lead frame, a wiring, a wire, a heat dissipating material, etc. can be mentioned, but even if copper is used for any member, the influence of copper ions can be reduced. Is.
  • the method of manufacturing a semiconductor device using the dicing/die-bonding integrated adhesive sheet is not limited to the method of manufacturing a semiconductor device described below.
  • a semiconductor wafer is pressure-bonded to the film-like adhesive 1 on the adhesive sheet 120 (adhesive sheet with integrated dicing and die bonding), and the adhesive is held and fixed (mounting step).
  • This step may be performed while pressing with a pressing means such as a pressure roll.
  • the semiconductor wafer is diced.
  • the semiconductor wafer is cut into a predetermined size, and a plurality of individual semiconductor elements (semiconductor chips) with a film-like adhesive are manufactured.
  • the dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method.
  • a cutting method called full-cut in which even dicing tape is cut, a method in which a semiconductor wafer is cut into half and cut by cooling and pulling, a laser cutting method, and the like can be adopted.
  • the dicing device used in this step is not particularly limited, and a conventionally known device can be used.
  • the pickup method is not particularly limited, and various conventionally known methods can be adopted. For example, there is a method of pushing up individual semiconductor elements from the side of the dicing/die-bonding integrated adhesive sheet with a needle and picking up the pushed semiconductor elements with a pickup device.
  • the pressure-sensitive adhesive layer is a radiation (for example, ultraviolet ray) curable type
  • pick up is performed after irradiating the pressure-sensitive adhesive layer with radiation.
  • the adhesive strength of the pressure-sensitive adhesive layer to the film adhesive is reduced, and the semiconductor element can be easily peeled off. As a result, the pickup can be performed without damaging the semiconductor element.
  • the semiconductor element with a film adhesive formed by dicing is adhered to a supporting member for mounting the semiconductor element via the film adhesive.
  • Bonding may be done by crimping.
  • the conditions for die bonding are not particularly limited, and can be set appropriately as needed. Specifically, for example, the die bonding temperature may be 80 to 160° C., the bonding load may be 5 to 15 N, and the bonding time may be 1 to 10 seconds.
  • thermosetting the film adhesive may be provided.
  • thermosetting the film adhesive that bonds the support member and the semiconductor element in the bonding step it is possible to more firmly bond and fix.
  • pressure may be applied simultaneously to cure.
  • the heating temperature in this step can be appropriately changed depending on the constituents of the film adhesive.
  • the heating temperature may be, for example, 60 to 200°C.
  • the temperature or pressure may be changed stepwise.
  • a wire bonding process of electrically connecting the tip of the terminal portion (inner lead) of the support member and the electrode pad on the semiconductor element with a bonding wire is performed.
  • the bonding wire for example, a gold wire, an aluminum wire, a copper wire or the like is used.
  • the temperature for wire bonding may be in the range of 80 to 250°C or 80 to 220°C.
  • the heating time may be several seconds to several minutes.
  • the wire connection may be performed by using the vibration energy of ultrasonic waves and the compression energy of applied pressure in a state of being heated within the above temperature range.
  • a sealing process is performed to seal the semiconductor element with the sealing resin.
  • This step is performed to protect the semiconductor element or the bonding wire mounted on the support member.
  • This step is performed by molding the resin for sealing with a mold.
  • the sealing resin may be, for example, an epoxy resin. The substrate and the residue are embedded by heat and pressure at the time of sealing, and peeling due to bubbles at the adhesive interface can be prevented.
  • the sealing resin that is insufficiently cured in the sealing process is completely cured. Even if the film adhesive is not cured by heat in the sealing step, the film adhesive can be cured by heat as well as the curing of the sealing resin in this step, so that the adhesive fixation can be achieved.
  • the heating temperature in this step can be appropriately set depending on the type of sealing resin, and may be, for example, in the range of 165 to 185° C., and the heating time may be about 0.5 to 8 hours.
  • the semiconductor element with the film adhesive adhered to the support member is heated using a reflow oven.
  • a resin-sealed semiconductor device may be surface-mounted on the support member.
  • the surface mounting method include reflow soldering in which solder is supplied in advance on a printed wiring board and then heated and melted by hot air or the like for soldering.
  • the heating method include hot air reflow and infrared reflow.
  • the heating method may be a method of heating the whole or a method of heating a local portion.
  • the heating temperature may be, for example, in the range of 240 to 280°C.
  • the film adhesive according to the present embodiment tends to have a lower cohesive force and an improved embedding property by using a specific acrylic rubber. Therefore, it is difficult for air bubbles to be caught in the semiconductor device, the air bubbles can be easily diffused in the sealing step, and peeling due to the air bubbles at the adhesive interface can be prevented.
  • Thermosetting resin component (A1) Thermosetting resin (A1-1) YDCN-700-10 (trade name, Nippon Steel & Sumikin Chemical Co., Ltd., o-cresol novolac type epoxy resin, epoxy equivalent: 209 g/eq) )
  • Curing agent (A2-1) PSM4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., phenol novolac resin, hydroxyl equivalent: 105 g/eq)
  • A3 Elastomer (A3-1) SG-P3 (trade name, manufactured by Nagase Chemtex Co., Ltd., methyl ethyl ketone solution of acrylic rubber having an epoxy group, weight average molecular weight of acrylic rubber: 850,000)
  • B Leveling agent (B1) BYK-333 (trade name, manufactured by BYK Japan KK, polyether-modified polydimethylsiloxane)
  • C Inorganic filler (C1) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 ⁇ m)
  • the produced adhesive varnish was filtered with a 100-mesh filter and vacuum degassed.
  • a polyethylene terephthalate (PET) film having a thickness of 38 ⁇ m and subjected to a mold release treatment was prepared, and the adhesive varnish after vacuum defoaming was applied onto the PET film.
  • the applied adhesive varnish was heated and dried in two stages of 90° C. for 5 minutes and 130° C. for 5 minutes to obtain film adhesives of Examples 1 to 3 and Comparative Example 1 in the B stage state. ..
  • the film adhesive was adjusted to have a thickness of 10 ⁇ m depending on the coating amount of the adhesive varnish.
  • NMP N-methyl-2-pyrrolidone
  • the film adhesives of Examples 1 to 3 and Comparative Example 1 in the B stage state are further dried by heating at 170° C. for 1 hour, and the film adhesives of Examples 1 to 3 and Comparative Example 1 in the C stage state.
  • the film adhesives (thickness: 10 ⁇ m) of Examples 1 to 3 and Comparative Example 1 in the C stage state were each cut out into a circle with a diameter of about 3 cm.
  • two silicon packing sheets having a thickness of 1.5 mm, an outer diameter of about 3 cm and an inner diameter of 1.8 cm were prepared.
  • the film adhesive cut out in a circular shape was sandwiched between two silicon packing sheets, sandwiched between the flange portions of two glass cells having a volume of 50 mL, and fixed with a rubber band.
  • a dicing tape manufactured by Hitachi Chemical Co., Ltd., thickness: 110 ⁇ m
  • the film adhesives thickness: 10 ⁇ m
  • An adhesive dicing-die bonding type integrated adhesive sheet containing a chemical was prepared.
  • a semiconductor wafer having a thickness of 400 ⁇ m was laminated on the film adhesive side of the dicing-die bonding integral type adhesive sheet at a stage temperature of 70° C. to prepare a dicing sample.
  • the obtained dicing sample was cut using a full-auto dicer DFD-6361 (manufactured by Disco Corporation).
  • the cutting was performed by a step cut method using two blades, and a dicing blade ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by Disco Corporation) were used.
  • the cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm/sec, and a chip size of 5 mm ⁇ 5 mm.
  • the cutting was performed in the first step so that the semiconductor wafer remained about 200 ⁇ m, and then in the second step so that the dicing tape had a cut of about 20 ⁇ m.
  • the semiconductor chip obtained by cutting was thermocompression bonded onto a solder resist (Taiyo Holdings Co., Ltd., trade name: AUS-308).
  • the pressure bonding conditions were a temperature of 120° C., a time of 1 second, and a pressure of 0.1 MPa.
  • the sample obtained by pressure bonding was put into a dryer and cured at 170° C. for 1 hour.
  • the universal bond tester Nedson Advance Technology Co., Ltd., product name: Series 4000
  • the strength was measured.
  • the measurement conditions were a stage temperature of 250°C. The results are shown in Table 1.
  • the film adhesives of Examples 1 to 3 were less likely to penetrate copper ions than the film adhesives of Comparative Example 1. It is presumed that this is because the leveling agent lowers the surface tension of the adhesive and suppresses the uptake of copper ions in the surface layer of the adhesive.
  • the film-like adhesive of the present invention can sufficiently suppress the problems caused by the movement of copper ions in the adhesive.

Landscapes

  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

La présente invention concerne un adhésif de film pour lier un élément semiconducteur et un élément de support sur lequel l'élément semiconducteur est monté. L'adhésif en film contient un composant de résine thermodurcissable et un agent d'étiquetage.
PCT/JP2020/001788 2019-01-28 2020-01-20 Adhésif en film, feuille adhésive, dispositif à semiconducteur et son procédé de fabrication WO2020158490A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG11202108023SA SG11202108023SA (en) 2019-01-28 2020-01-20 Filmy adhesive, adhesive sheet, semiconductor device, and method for manufacturing same
CN202080011016.6A CN113348539A (zh) 2019-01-28 2020-01-20 膜状黏合剂、黏合片以及半导体装置及其制造方法
KR1020217024426A KR102693643B1 (ko) 2019-01-28 2020-01-20 필름상 접착제, 접착 시트, 및 반도체 장치 및 그 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-012270 2019-01-28
JP2019012270A JP7251167B2 (ja) 2019-01-28 2019-01-28 フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
WO2020158490A1 true WO2020158490A1 (fr) 2020-08-06

Family

ID=71842082

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/001788 WO2020158490A1 (fr) 2019-01-28 2020-01-20 Adhésif en film, feuille adhésive, dispositif à semiconducteur et son procédé de fabrication

Country Status (6)

Country Link
JP (1) JP7251167B2 (fr)
KR (1) KR102693643B1 (fr)
CN (1) CN113348539A (fr)
SG (1) SG11202108023SA (fr)
TW (1) TWI830861B (fr)
WO (1) WO2020158490A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102466644B1 (ko) * 2021-03-23 2022-11-16 주식회사 엘엠에스 점착제 조성물 및 광학 점착제

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005307037A (ja) * 2004-04-22 2005-11-04 Nagase Chemtex Corp フィルム状エポキシ樹脂組成物
JP2011052109A (ja) * 2009-09-01 2011-03-17 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
JP2012158631A (ja) * 2011-01-31 2012-08-23 Shin-Etsu Chemical Co Ltd エポキシ樹脂組成物、それを用いたダイアタッチ方法及び該組成物の硬化物を有する半導体装置
JP2015081269A (ja) * 2013-10-21 2015-04-27 信越化学工業株式会社 スクリーン印刷用導電性エポキシ樹脂組成物、それを用いたダイアタッチ方法および該組成物の硬化物を有する半導体装置
JP2017105883A (ja) * 2015-12-07 2017-06-15 信越化学工業株式会社 液状樹脂組成物及び該組成物を用いたダイアタッチ方法、並びに該組成物の硬化物を有する半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5087910B2 (ja) * 2005-12-13 2012-12-05 東レ株式会社 電子機器用接着剤組成物、電子機器用接着剤シートおよびそれを用いた電子部品
JP2009111340A (ja) 2007-10-11 2009-05-21 Hitachi Chem Co Ltd 接着剤付きウエハ、接着剤組成物及び接着剤付きウエハの製造方法
JP5804820B2 (ja) 2011-07-25 2015-11-04 日東電工株式会社 半導体装置製造用の接着シート、半導体装置製造用の接着シートを有する半導体装置、及び、半導体装置の製造方法
CN104755259A (zh) * 2012-10-22 2015-07-01 三菱丽阳株式会社 层积结构体以及其制造方法、制品
KR102343970B1 (ko) * 2015-01-14 2021-12-27 린텍 가부시키가이샤 수지막 형성용 시트, 수지막 형성용 복합 시트 및 실리콘 웨이퍼의 재생 방법
JP2016190964A (ja) * 2015-03-31 2016-11-10 日立化成株式会社 接着フィルム
WO2017038916A1 (fr) * 2015-09-01 2017-03-09 リンテック株式会社 Feuille adhésive
JP6521823B2 (ja) * 2015-10-01 2019-05-29 リンテック株式会社 ダイシングダイボンディングシート
KR102479228B1 (ko) * 2016-12-22 2022-12-21 도아고세이가부시키가이샤 접착제 조성물 그리고 이것을 사용한 커버레이 필름, 본딩 시트, 동장 적층판 및 전자파 실드재

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005307037A (ja) * 2004-04-22 2005-11-04 Nagase Chemtex Corp フィルム状エポキシ樹脂組成物
JP2011052109A (ja) * 2009-09-01 2011-03-17 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
JP2012158631A (ja) * 2011-01-31 2012-08-23 Shin-Etsu Chemical Co Ltd エポキシ樹脂組成物、それを用いたダイアタッチ方法及び該組成物の硬化物を有する半導体装置
JP2015081269A (ja) * 2013-10-21 2015-04-27 信越化学工業株式会社 スクリーン印刷用導電性エポキシ樹脂組成物、それを用いたダイアタッチ方法および該組成物の硬化物を有する半導体装置
JP2017105883A (ja) * 2015-12-07 2017-06-15 信越化学工業株式会社 液状樹脂組成物及び該組成物を用いたダイアタッチ方法、並びに該組成物の硬化物を有する半導体装置

Also Published As

Publication number Publication date
KR20210114010A (ko) 2021-09-17
TWI830861B (zh) 2024-02-01
TW202037696A (zh) 2020-10-16
CN113348539A (zh) 2021-09-03
JP2020120073A (ja) 2020-08-06
JP7251167B2 (ja) 2023-04-04
KR102693643B1 (ko) 2024-08-09
SG11202108023SA (en) 2021-08-30

Similar Documents

Publication Publication Date Title
JP7327416B2 (ja) 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP2024010048A (ja) 半導体装置
JPWO2019220540A1 (ja) 半導体装置、並びに、その製造に使用する熱硬化性樹脂組成物及びダイシングダイボンディング一体型テープ
WO2020158490A1 (fr) Adhésif en film, feuille adhésive, dispositif à semiconducteur et son procédé de fabrication
WO2023152837A1 (fr) Adhésif sous forme de film, film deux-en-un de découpage en dés et de fixage de puce, dispositif semiconducteur et procédé de fabrication associé
WO2022149582A1 (fr) Adhésif de type film, film de découpage en dés/fixation de puce intégré, dispositif à semi-conducteur et son procédé de production
WO2020129996A1 (fr) Adhésif sous forme de film, feuille adhésive, et dispositif à semi-conducteur et son procédé de fabrication
JP7255146B2 (ja) フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法
WO2020065783A1 (fr) Adhésif en forme de film, feuille adhésive, dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
WO2020162412A1 (fr) Adhésif en forme de film, feuille adhésive et dispositif à semi-conducteur
KR102629864B1 (ko) 필름상 접착제, 접착 시트, 및 반도체 장치와 그 제조 방법
WO2022149581A1 (fr) Composition d'adhésif, adhésif sous forme de film, film intégré de découpage en dés et fixation de puce, et dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci
CN112740381B (zh) 膜状黏合剂、黏合片以及半导体装置及其制造方法
JP2022044991A (ja) ダイボンディングフィルム、接着シート、並びに半導体装置及びその製造方法
WO2024190884A1 (fr) Adhésif en film, film intégré de découpage en dés/fixation de puce, et dispositif à semi-conducteur et son procédé de production
CN116670240A (zh) 膜状黏合剂、黏合片以及半导体装置及其制造方法
KR20240090161A (ko) 필름상 접착제, 다이싱·다이본딩 일체형 필름, 및 반도체 장치 및 그 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20749769

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20217024426

Country of ref document: KR

Kind code of ref document: A

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 22.10.2021)

122 Ep: pct application non-entry in european phase

Ref document number: 20749769

Country of ref document: EP

Kind code of ref document: A1