JPWO2019220540A1 - 半導体装置、並びに、その製造に使用する熱硬化性樹脂組成物及びダイシングダイボンディング一体型テープ - Google Patents
半導体装置、並びに、その製造に使用する熱硬化性樹脂組成物及びダイシングダイボンディング一体型テープ Download PDFInfo
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- JPWO2019220540A1 JPWO2019220540A1 JP2020518855A JP2020518855A JPWO2019220540A1 JP WO2019220540 A1 JPWO2019220540 A1 JP WO2019220540A1 JP 2020518855 A JP2020518855 A JP 2020518855A JP 2020518855 A JP2020518855 A JP 2020518855A JP WO2019220540 A1 JPWO2019220540 A1 JP WO2019220540A1
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Abstract
Description
図1は本実施形態に係る半導体装置を模式的に示す断面図である。この図に示す半導体装置100は、基板10と、基板10の表面上に配置された第1の半導体素子Waと、第1の半導体素子Waを封止している第1の封止層20と、第1の半導体素子Waの上方に配置された第2の半導体素子Wbと、第2の半導体素子Wbを封止している第2の封止層40とを備える。
半導体装置100の製造方法について説明する。まず、図3に示す構造体50を作製する。すなわち、基板10の表面上に接着剤15を介して第1の半導体素子Waを配置する。その後、第1の半導体素子Waと回路パターン10bとを第1のワイヤ11で電気的に接続する。
図7(a)〜図7(e)を参照しながら、図2に示す積層体30(接着剤付き半導体チップ)の作製方法の一例について説明する。まず、ダイシングダイボンディング一体型テープ8(以下、場合により「テープ8」という。)を所定の装置(不図示)に配置する。テープ8は、基材層1と粘着層2と接着層20Aとをこの順序で備える。基材層1は、例えば、ポリエチレンテレフタレートフィルム(PETフィルム)である。半導体ウェハWは、例えば、厚さ10〜100μmの薄型半導体ウェハである。半導体ウェハWは、単結晶シリコンであってもよいし、多結晶シリコン、各種セラミック、ガリウム砒素等の化合物半導体であってもよい。
フィルム状接着剤20Pを構成する熱硬化性樹脂組成物について説明する。なお、フィルム状接着剤20Pは接着層20Aを個片化したものであり、両者は同じ熱硬化性樹脂組成物からなる。この熱硬化性樹脂組成物は、例えば、半硬化(Bステージ)状態を経て、その後の硬化処理によって完全硬化物(Cステージ)状態となり得るものである。
(a)熱硬化性樹脂(以下、単に「(a)成分」という場合がある。)
(b)高分子量成分(以下、単に「(b)成分」という場合がある。)
(c)無機フィラー(以下、単に「(c)成分」という場合がある。)
なお、本実施形態においては、(a)熱硬化性樹脂がエポキシ樹脂を含む場合、エポキシ樹脂(以下、単に「(a1)成分」という場合がある。)が「低分子量成分」に該当する。この場合、(a)熱硬化性樹脂は、エポキシ樹脂の硬化剤となり得るフェノール樹脂(以下、単に「(a2)成分」という場合がある。)を含むことが好ましい。
(d)カップリング剤(以下、単に「(d)成分」という場合がある。)
(e)硬化促進剤(以下、単に「(e)成分」という場合がある。)
(a1)成分は、分子内にエポキシ基を有するものであれば、特に制限なく用いることができる。(a1)成分としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールAノボラック型エポキシ樹脂、ビスフェノールFノボラック型エポキシ樹脂、ジシクロペンタジエン骨格含有エポキシ樹脂、スチルベン型エポキシ樹脂、トリアジン骨格含有エポキシ樹脂、フルオレン骨格含有エポキシ樹脂、トリフェノールフェノールメタン型エポキシ樹脂、ビフェニル型エポキシ樹脂、キシリレン型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、多官能フェノール類、アントラセン等の多環芳香族類のジグリシジルエーテル化合物などが挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、(a1)成分は、耐熱性の観点から、クレゾールノボラック型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、又はビスフェノールA型エポキシ樹脂であってもよい。
(b)成分は、ガラス転移温度(Tg)が50℃以下であるものが好ましい。
(c)成分としては、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミウィスカ、窒化ホウ素、シリカ等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、(c)成分は、樹脂との相溶性の観点から、シリカであってもよい。
(d)成分は、シランカップリング剤であってよい。シランカップリング剤としては、例えば、γ−ウレイドプロピルトリエトキシシラン、γ−メルカプトプロピルトリメトキシシラン、3−フェニルアミノプロピルトリメトキシシラン、3−(2−アミノエチル)アミノプロピルトリメトキシシラン等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。
(e)成分は、特に限定されず、一般に使用されるものを用いることができる。(e)成分としては、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、第四級アンモニウム塩等が挙げられる。これらは、1種を単独で又は2種以上を組み合わせて用いてもよい。これらの中でも、反応性の観点から(e)成分はイミダゾール類及びその誘導体であってもよい。
図7(a)に示すダイシングダイボンディング一体型テープ8及びその製造方法について説明する。テープ8の製造方法は、溶剤を含有する接着剤組成物のワニスを基材フィルム(不図示)上に塗布する工程と、塗布されたワニスを50〜150℃で加熱乾燥することによって接着層20Aを形成する工程とを含む。
表1及び表2に示す成分を含むワニス(計6種類)を次のようにして調製した。すなわち、熱硬化性樹脂としてのエポキシ樹脂及びフェノール樹脂と、無機フィラーとを含む組成物にシクロヘキサノンを加えて撹拌した。これに、高分子量成分としてのアクリルゴムを加えて撹拌した後、カップリング剤と硬化促進剤とを更に加え、各成分が十分に均一になるまで撹拌することによってワニスを得た。
(エポキシ樹脂)
・YDF−8170C(商品名):東都化成(株)製、ビスフェノールF型エポキシ樹脂、エポキシ当量159、常温で液体、軟化点10〜30℃、分子量100〜1000(低分子量成分)
・YDCN−700−10(商品名):東都化成(株)製、クレゾールノボラック型エポキシ樹脂、エポキシ当量210、軟化点75〜85℃)、分子量1000超
(フェノール樹脂)
・ミレックスXLC−LL(商品名):三井化学(株)製、フェノール樹脂、水酸基当量175、軟化点77℃、分子量1000超
(アクリルゴム)
・HTR−860P−3CSP:ナガセケムテックス(株)製、重量平均分子量80万(高分子量成分)
(無機フィラー)
・SC2050−HLG(商品名):アドマテックス(株)製、シリカフィラー分散液、平均粒径0.50μm
(硬化促進剤)
・キュアゾール2PZ−CN(商品名):四国化成工業(株)製、1−シアノエチル−2−フェニルイミダゾール
フィルム状接着剤の100℃及び120℃における溶融粘度は次の方法で測定した。すなわち、厚さ60μmのフィルム状接着剤を五枚積層することによって厚さを300μmとし、これを10mm×10mmのサイズに打ち抜くことによって測定用の試料を得た。動的粘弾性装置ARES(TA Instruments社製)に直径8mmの円形アルミプレート治具をセットし、更にここに上記試料をセットした。その後、35℃で5%の歪みを与えながら5℃/分の昇温速度で130℃まで昇温させながら測定し、100℃及び120℃のときの溶融粘度の値を記録した。表1及び表2に結果を示す。
フィルム状接着剤の硬化物(175℃の温度条件で硬化させたもの)の180℃における弾性率を測定した。測定には動的粘弾性装置(製品名:Rheogel−E4000、株式会社ユービーエム製)を使用し、試料に対して引張り荷重をかけて、周波数10Hz、3℃/分の昇温速度で300℃まで昇温させ、180℃における弾性率を測定した。表1及び表2に結果を示す。
フィルム状接着剤について、以下の項目について評価を行った。
フィルム状接着剤の埋込性を次の方法により評価した。
(第1の半導体素子とフィルム状接着剤とからなる積層体の作製)
半導体ウェハ(直径:8インチ、厚さ:50μm)にダイシングダイボンディング一体型フィルムHR−9004−10(日立化成(株)製、接着層の厚さ10μm、粘着層の厚さ110μm)を貼り付けた。これをダイシングすることによって第1の半導体素子(コントローラチップ、サイズ:3.0mm×3.0mm)とフィルム状接着剤とからなる第1の積層体を得た。
(第2の半導体素子とフィルム状接着剤とからなる積層体の作製)
実施例及び比較例に係る各フィルム状接着剤(厚さ120μm)とダイシング用粘着フィルムとからなるダイシングダイボンディング一体型フィルムを作製した。これを半導体ウェハ(直径:8インチ、厚さ:30μm)に貼り付けた。これをダイシングすることによって第2の半導体素子(サイズ:7.5mm×7.5mm)とフィルム状接着剤とからなる第2の積層体を得た。
(第1及び第2の半導体素子の接着)
第1及び第2の半導体素子を圧着するための基板(表面の凹凸:最大6μm)を準備した。この基板にフィルム状接着剤を介して第1の半導体素子を、120℃、0.20MPa、2秒間の条件で圧着した後、120℃で2時間にわたって加熱することによってフィルム状接着剤を半硬化させた。
次に、第1の半導体素子を覆うように、評価対象のフィルム状接着剤を介して第2の半導体素子を、120℃、0.20MPa、2秒間の条件で圧着した。この際、先に圧着された第1の半導体素子と第2の半導体素子の中心位置が平面視で一致するように位置合わせをした。
上記のようにして得た構造体を加圧オーブンに投入し、35℃から3℃/分の昇温速度で140℃まで昇温させ、140℃で30分加熱した。加熱処理後の構造体を超音波映像装置SAT((株)日立パワーソリューションズ製、品番FS200II、プローブ:25MHz)にて分析することによって、埋込性を確認した。以下の基準で評価を行った。表3及び表4に結果を示す。
A:所定の断面におけるボイドの面積割合が5%未満。
B:所定の断面におけるボイドの面積割合が5%以上。
埋込性の評価に供した構造体の上部及び側面を顕微鏡で観察することによって、汚染の有無及びヒケ発生の有無を確認した。ヒケが発生した試料については、ヒケの深さ(起点:第2の半導体素子の端部)を測定した。表3及び表4に結果を示す。
フィルム状接着剤の硬化物のダイシェア強度(接着強度)を次の方法により測定した。まず、実施例及び比較例に係る各フィルム状接着剤(厚さ120μm)を半導体ウェハ(厚さ400μm)に70℃で貼り付けた。これをダイシングすることによって半導体素子(サイズ:5mm×5mm)とフィルム状接着剤とからなる積層体を得た。他方、表面にソルダーレジストインキ(AUS308)を塗布した基板を準備した。この表面にフィルム状接着剤を介して半導体素子を、120℃、0.1MPa、5秒間の条件で圧着した。その後、これを110℃で1時間にわたって加熱処理した後、更に、170℃で3時間にわたって加熱することによって、フィルム状接着剤を硬化させることによって測定用の試料を得た。この試料を85℃、60RH%条件の下、168時間放置した。その後、試料を25℃、50%RH条件下で30分間放置してから、250℃でダイシェア強度を測定し、これを接着強度とした。ダイシェア強度の測定にはDage社製の万能ボンドテスタ シリーズ4000を使用した。表3及び表4に結果を示す。
フィルム状接着剤の耐リフロー性を次の方法により評価した。まず、埋込性の評価に供した構造体と同様の構造体を作製した。構造体の第2の半導体素子をモールド用封止材(日立化成(株)製、商品名「CEL−9750ZHF10)で封止することによって、評価用のパッケージを得た。なお、樹脂封止の条件は175℃/6.7MPa/90秒とし、硬化の条件は175℃、5時間とした。
上記パッケージを24個準備し、これらをJEDECで定めた環境下(レベル3、30℃、60RH%、192時間)に曝して吸湿させた。続いて、IRリフロー炉(260℃、最高温度265℃)に吸湿後のパッケージを3回通過させた。以下の基準で評価を行った。表3及び表4に結果を示す。
A:パッケージの破損、厚みの変化、フィルム状接着剤と半導体素子との界面での剥離等が24個のパッケージのうち1個も観察されなかった。
B:パッケージの破損、厚みの変化、フィルム状接着剤と半導体素子との界面での剥離等が24個のパッケージのうち少なくとも1個観察された。
Claims (10)
- 基板と、
前記基板上に配置された第1の半導体素子と、
前記基板における前記第1の半導体素子が配置された領域を覆うように配置されており、前記第1の半導体素子を封止している第1の封止層と、
前記第1の封止層における前記基板の側と反対側の表面を覆うように配置されており、前記第1の半導体素子よりも大きい面積を有する第2の半導体素子と、
を備え、
前記第1の封止層が熱硬化性樹脂組成物の硬化物からなり、前記熱硬化性樹脂組成物の120℃における溶融粘度が2500〜11500Pa・sである、半導体装置。 - 前記熱硬化性樹脂組成物は、分子量10〜1000の低分子量成分と、分子量10万〜100万の高分子量成分とを含み、
前記低分子量成分の含有量M1が前記熱硬化性樹脂組成物に含まれる樹脂成分の質量100質量部に対して23〜35質量部であり、
前記高分子量成分の含有量M2が前記熱硬化性樹脂組成物に含まれる樹脂成分の質量100質量部に対して25〜45質量部である、請求項1に記載の半導体装置。 - 前記熱硬化性樹脂組成物に含まれる樹脂成分の質量100質量部に対して前記低分子量成分と前記高分子量成分の合計量が54〜76質量部である、請求項2に記載の半導体装置。
- 前記基板の表面に形成された回路パターンと、
前記第1の半導体素子と前記回路パターンとを電気的に接続する第1のワイヤと、
を更に備える、請求項1〜3のいずれか一項に記載の半導体装置。 - 前記第2の半導体素子と前記回路パターンとを電気的に接続する第2のワイヤと、
前記第2の半導体素子及び前記第2のワイヤを封止している第2の封止層と、
を更に備える、請求項4に記載の半導体装置。 - 前記第2の半導体素子の上に積層された第3の半導体素子を更に備える、請求項1〜5のいずれか一項に記載の半導体装置。
- 半導体装置の製造プロセスにおいて使用される熱硬化性樹脂組成物であって、
前記製造プロセスが、前記熱硬化性樹脂組成物を加熱する硬化処理を経て、ワイヤの少なくとも一部及び半導体素子の少なくとも一方が硬化処理後の前記熱硬化性樹脂組成物に埋め込まれた状態とする工程を含み、
前記熱硬化性樹脂組成物の120℃における溶融粘度が2500〜11500Pa・sである、熱硬化性樹脂組成物。 - 分子量10〜1000の低分子量成分と、
分子量10万〜100万の高分子量成分と、
を含み、
前記低分子量成分の含有量M1が前記熱硬化性樹脂組成物に含まれる樹脂成分の質量100質量部に対して23〜35質量部であり、
前記高分子量成分の含有量M2が前記熱硬化性樹脂組成物に含まれる樹脂成分の質量100質量部に対して25〜45質量部である、請求項7に記載の熱硬化性樹脂組成物。 - 当該熱硬化性樹脂組成物に含まれる樹脂成分の質量100質量部に対して前記低分子量成分と前記高分子量成分の合計量が54〜76質量部である、請求項8に記載の熱硬化性樹脂組成物。
- 粘着層と、
請求項7〜9のいずれか一項に記載の熱硬化性樹脂組成物からなる接着層と、
を備える、ダイシングダイボンディング一体型テープ。
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