WO2022054718A1 - Adhésif sous forme de film, feuille adhésive et dispositif à semi-conducteurs et procédé de préparation associé - Google Patents

Adhésif sous forme de film, feuille adhésive et dispositif à semi-conducteurs et procédé de préparation associé Download PDF

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Publication number
WO2022054718A1
WO2022054718A1 PCT/JP2021/032482 JP2021032482W WO2022054718A1 WO 2022054718 A1 WO2022054718 A1 WO 2022054718A1 JP 2021032482 W JP2021032482 W JP 2021032482W WO 2022054718 A1 WO2022054718 A1 WO 2022054718A1
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Prior art keywords
adhesive
film
component
semiconductor element
semiconductor
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PCT/JP2021/032482
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English (en)
Japanese (ja)
Inventor
奏美 中村
慎太郎 橋本
美春 越野
大輔 山中
紘平 谷口
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昭和電工マテリアルズ株式会社
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Application filed by 昭和電工マテリアルズ株式会社 filed Critical 昭和電工マテリアルズ株式会社
Priority to CN202180054989.2A priority Critical patent/CN116670240A/zh
Priority to KR1020237008244A priority patent/KR20230062565A/ko
Publication of WO2022054718A1 publication Critical patent/WO2022054718A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the present invention relates to a film-like adhesive, an adhesive sheet, a semiconductor device, and a method for manufacturing the same.
  • a film-like adhesive and a dicing tape are attached to the back surface of a semiconductor wafer, and then a part of the semiconductor wafer, the film-like adhesive, and the dicing tape is cut in a dicing step on the back surface of the semiconductor wafer.
  • the pasting method is generally used. In such a method, it is necessary to cut the film-like adhesive at the same time when dicing the semiconductor wafer, but in a general dicing method using a diamond blade, the semiconductor wafer and the film-like adhesive are cut at the same time. Therefore, it is necessary to slow down the cutting speed, which may lead to an increase in cost.
  • a step of easily classifying the semiconductor wafer such as a method of irradiating the inside of the semiconductor wafer on the planned cutting line with a laser beam to form a modified region, is performed, and then the outer peripheral portion is expanded.
  • a method for cutting a semiconductor wafer has been proposed (for example, Patent Document 1). This method is called stealth dicing. Stealth dicing has the effect of reducing defects such as chipping, especially when the thickness of the semiconductor wafer is thin, and can be expected to have an effect of improving the yield.
  • the film-like adhesive is flexible and easy to stretch, it tends to be difficult to be separated by the expansion of the dicing tape.
  • expanding particularly, cooling expanding at a low temperature (for example, in the range of -15 ° C to 0 ° C)
  • the amount of deflection of the dicing tape also increases, which may adversely affect the subsequent transport process and the like.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a film-like adhesive having excellent splittability by cooling expand.
  • One aspect of the present invention provides a film-like adhesive for adhering a semiconductor element and a support member on which the semiconductor element is mounted.
  • the film-like adhesive contains a thermosetting resin, a curing agent, and an elastomer.
  • the elastomer includes an elastomer that satisfies the following condition (i) and the following condition (ii).
  • Such a film-like adhesive can be excellent in fragmentability due to cooling expand.
  • the flexibility of the film-like adhesive tends to be suppressed by using a specific elastomer in the film-like adhesive. Therefore, the present inventors suppress an excessive increase in the flexibility of the film-like adhesive by using such a specific elastomer, and as a result, improve the fragmentability of the film-like adhesive in the cooling expand. I think I can do it.
  • the film-like adhesive is prepared by preparing a sample having a cross-sectional area A (mm 2 ) from the film-like adhesive and by a cutting test under low temperature conditions in the range of -15 ° C to 0 ° C. mm), the step of obtaining the breaking strength P (N), and the breaking elongation L (mm), the step of obtaining the breaking coefficient m represented by the following formula (1), and the breaking resistance represented by the following formula (2).
  • the split coefficient m is more than 0 and 70 or less
  • the split resistance R is 0 N / mm 2 more than 40 N.
  • the film-like adhesive may further contain an inorganic filler.
  • Another aspect of the present invention provides an adhesive sheet comprising a substrate and the film-like adhesive provided on one surface of the substrate.
  • Another aspect of the present invention includes a semiconductor element, a support member on which the semiconductor element is mounted, and an adhesive member provided between the semiconductor element and the support member to bond the semiconductor element and the support member, and the adhesive member.
  • a semiconductor device which is a cured product of the film-like adhesive.
  • Another aspect of the present invention provides a method for manufacturing a semiconductor device, comprising a step of adhering a semiconductor element and a support member using the film-like adhesive.
  • Another aspect of the present invention was made into a plurality of pieces by a step of attaching the film-like adhesive of the adhesive sheet to the semiconductor wafer and cutting the semiconductor wafer to which the film-like adhesive was attached.
  • a method for manufacturing a semiconductor device comprising a step of manufacturing a semiconductor element with a film-shaped adhesive and a step of adhering the semiconductor element with a film-shaped adhesive to a support member.
  • a film-like adhesive having excellent splittability due to cooling expand is provided. Further, according to the present invention, an adhesive sheet and a semiconductor device using such a film-like adhesive are provided. Further, according to the present invention, there is provided a method for manufacturing a semiconductor device using a film-like adhesive or an adhesive sheet.
  • the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • (meth) acrylate means acrylate or the corresponding methacrylate.
  • the film-like adhesive is for adhering a semiconductor element and a support member on which the semiconductor element is mounted.
  • the film-like adhesive includes a thermosetting resin (hereinafter, may be referred to as "(A) component”), a curing agent (hereinafter, may be referred to as “(B) component”), and an elastomer (hereinafter, may be referred to as “component”). It may be referred to as “(C) component”).
  • the film-like adhesive may further contain an inorganic filler (hereinafter, may be referred to as “component (D)”).
  • the film-like adhesive further includes a coupling agent (hereinafter, may be referred to as "(E) component”), a curing accelerator (hereinafter, may be referred to as "(F) component”), and other components. It may be contained.
  • the film-like adhesive comprises (A) component, (B) component, (C) component, and other components ((D) component, (E) component, (F) component, and others added as needed. It can be obtained by molding an adhesive composition containing (such as the components of) into a film.
  • the film-like adhesive adheresive composition
  • the film-like adhesive may be in a semi-cured (B stage) state and may be in a completely cured (C stage) state after the curing treatment.
  • Thermosetting resin may be an epoxy resin from the viewpoint of adhesiveness.
  • the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, and bisphenol F novolak type epoxy resin.
  • Stilben type epoxy resin triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, polyfunctional phenols, polycyclic fragrance such as anthracene
  • Examples thereof include diglycidyl ether compounds of the family. These may be used individually by 1 type or in combination of 2 or more type.
  • the epoxy resin may be a cresol novolac type epoxy resin.
  • the epoxy equivalent of the epoxy resin is not particularly limited, but may be 90 to 300 g / eq or 110 to 290 g / eq.
  • Component (B) Curing agent
  • the component (B) is a component that acts as a curing agent for the component (A).
  • the component (B) may be a phenol resin that can be a curing agent for the epoxy resin.
  • the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde and the like.
  • Phenols such as novolak type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol and /
  • examples thereof include phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, naphthol aralkyl resin, biphenyl aralkyl type phenol resin, phenyl aralkyl type phenol resin and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the phenol resin may be a phenylaralkyl type phenol resin.
  • the hydroxyl group equivalent of the phenol resin may be 70 g / eq or more or 70 to 300 g / eq.
  • the hydroxyl group equivalent of the phenol resin is 70 g / eq or more, the storage elastic modulus of the film tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent problems due to the generation of foaming, outgas and the like. ..
  • the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenol resin is From the viewpoint of curability, 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / It may be 0.40, or 0.45 / 0.55 to 0.55 / 0.45.
  • the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
  • the total content of the component (A) and the component (B) is 5 to 50 parts by mass and 10 to 40 parts by mass with respect to 100 parts by mass of the total amount of the component (A), the component (B) and the component (C). It may be a part, or 15 to 30 parts by mass.
  • the elastic modulus is increased by crosslinking. Tends to improve.
  • the total content of the component (A) and the component (B) is 50 parts by mass or less with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C), it depends on the film handleability. It tends to be excellent.
  • Component (C) Elastomer
  • the component (C) include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin; and modified products of these resins. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (C) is derived from (meth) acrylic acid ester because it has few ionic impurities and is excellent in heat resistance, it is easy to secure connection reliability of a semiconductor device, and it is excellent in fluidity. It may be an acrylic resin (acrylic rubber) having a constituent unit as a main component.
  • the content of the constituent unit derived from the (meth) acrylic acid ester in the component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of the constituent units.
  • the acrylic resin (acrylic rubber) may contain a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
  • the component (C) includes an elastomer satisfying the condition (i) and the condition (ii) (hereinafter, may be referred to as "component (C1)").
  • the glass transition temperature (Tg) of the component (C1) is 12 ° C. or higher, and may be 15 ° C. or higher, 18 ° C. or higher, or 20 ° C. or higher.
  • Tg of the component (C1) is 12 ° C. or higher, the adhesive strength of the film-like adhesive can be further improved, and further, it is possible to prevent the film-like adhesive from becoming too flexible. There is a tendency. Therefore, by using such a component (C1), the fragmentability of the film-like adhesive in the cooling expand can be improved.
  • the upper limit of Tg of the component (C1) is not particularly limited, but may be, for example, 55 ° C. or lower, 50 ° C. or lower, 45 ° C.
  • the glass transition temperature (Tg) means a value measured using a DSC (heat differential scanning calorimeter) (for example, Thermo Plus 2 manufactured by Rigaku Co., Ltd.).
  • the Tg of the component (C1) is the type and content of the structural unit constituting the component (C1) (when the component (C1) is an acrylic resin (acrylic rubber), the structural unit derived from the (meth) acrylic acid ester). Can be adjusted to a desired range by adjusting.
  • the weight average molecular weight (Mw) of the component (C1) is 800,000 or less, and may be 700,000 or less, 600,000 or less, 500,000 or less, 400,000 or less, or 300,000 or less. ..
  • the lower limit of Mw of the component (C1) is not particularly limited, but may be, for example, 10,000 or more, 50,000 or more, or 100,000 or more.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve made of standard polystyrene.
  • the content of the component (C1) may be 50 to 100% by mass, 70 to 100% by mass, 90 to 100% by mass, or 95 to 100% by mass based on the total amount of the component (C).
  • the content of the component (C1) may be 100% by mass based on the total amount of the component (C).
  • the component (C) may contain, in addition to the component (C1), an elastomer that does not meet the requirements of the component (C1) (hereinafter, may be referred to as “component (C2)").
  • the content of the component (C2) may be 0 to 50% by mass, 0 to 30% by mass, 0 to 10% by mass, or 0 to 5% by mass based on the total amount of the component (C).
  • the content of the component (C2) may be 0% by mass based on the total amount of the component (C). That is, the component (C) does not have to contain the component (C2).
  • the content of the component (C) is 50 to 95 parts by mass, 60 to 90 parts by mass, or 70 to 85 parts by mass with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C). It may be a department. When the content of the component (C) is in such a range, a film having higher elasticity can be obtained, and the die share strength tends to be further increased.
  • Component (D) Inorganic filler
  • the component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and the like.
  • examples thereof include aluminum borate whisker, boron nitride, silica and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (D) may be silica from the viewpoint of adjusting the melt viscosity.
  • the shape of the component (D) is not particularly limited, but may be spherical.
  • the average particle size of the component (D) may be 0.01 to 1 ⁇ m, 0.01 to 0.5 ⁇ m, 0.01 to 0.3 ⁇ m, or 0.01 to 0.1 ⁇ m from the viewpoint of fluidity. ..
  • the average particle size means a value obtained by converting from the BET specific surface area.
  • the content of the component (D) is 0.1 part by mass or more, 1 part by mass or more, and 3 parts by mass or more with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C). Alternatively, it may be 5 parts by mass or more, and may be 50 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, or 15 parts by mass or less.
  • Component (E) Coupling agent
  • the component (E) may be a silane coupling agent.
  • the silane coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. Be done. These may be used individually by 1 type or in combination of 2 or more type.
  • Component (F) Curing accelerator
  • the component (F) is not particularly limited, and generally used components can be used.
  • the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the component (F) may be imidazoles or a derivative thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the film-like adhesive may further contain other components.
  • other components include pigments, ion trapping agents, antioxidants and the like.
  • the total content of the component (E), the component (F), and other components is 0 to 30 parts by mass with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C). May be.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive.
  • the film-like adhesive 1 (adhesive film) shown in FIG. 1 is a film-shaped adhesive composition.
  • the film-like adhesive 1 may be in a semi-cured (B stage) state.
  • Such a film-like adhesive 1 can be formed by applying an adhesive composition to a support film.
  • an adhesive composition varnish adheresive varnish
  • the component (A), the component (B), the component (C), and the component added as necessary are mixed or kneaded in a solvent.
  • a film-like adhesive 1 can be obtained by preparing an adhesive varnish, applying the obtained adhesive varnish to a support film, and removing the solvent by heating and drying.
  • the support film is not particularly limited as long as it can withstand the above-mentioned heat drying, and for example, polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethylene naphthalate film, polymethylpentene film and the like can be used. It may be there.
  • the base material 2 may be a multilayer film in which two or more types are combined, or may have a surface treated with a mold release agent such as silicone or silica.
  • the thickness of the support film may be, for example, 10 to 200 ⁇ m or 20 to 170 ⁇ m.
  • Mixing or kneading can be performed by using a disperser such as a normal stirrer, a raft machine, a three-roll machine, or a ball mill, and combining these as appropriate.
  • a disperser such as a normal stirrer, a raft machine, a three-roll machine, or a ball mill, and combining these as appropriate.
  • the solvent used for preparing the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used.
  • a solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene and xylene.
  • the solvent may be methyl ethyl ketone or cyclohexanone from the viewpoint of drying speed and price.
  • a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. Be done.
  • the heat-drying is not particularly limited as long as the solvent used is sufficiently volatilized, but can be carried out by heating at 50 to 150 ° C. for 1 to 30 minutes.
  • the thickness of the film-shaped adhesive 1 may be 50 ⁇ m or less, 40 ⁇ m or less, 30 ⁇ m or less, 20 ⁇ m or less, or 15 ⁇ m or less.
  • the lower limit of the thickness of the film-shaped adhesive 1 is not particularly limited, but may be, for example, 1 ⁇ m or more.
  • the film-like adhesive 1 is a film under a fragmentability evaluation method (for example, in the range of ⁇ 15 ° C. to 0 ° C.) at which cooling expansion is performed, using the results of a splitting test conducted under the following conditions.
  • the film-like adhesive may have a breaking coefficient m of more than 0 and 70 or less and a breaking resistance R of 0 N / mm and more than 2 and 40 N / mm 2 or less.
  • the split test is classified as a bending strength test, and includes a step of pushing the center portion of the sample until the sample breaks with both ends fixed.
  • the sample S is subjected to a cutting test in a state of being sandwiched and fixed by a pair of sample fixing jigs 14.
  • the pair of sample fixing jigs 14 are made of, for example, thick paper having sufficient strength, and each has a rectangular opening 14a in the center.
  • a load is applied to the central portion of the sample S in the fixed state by using the pushing jig 15 (see FIG. 3).
  • the sample S may be any as long as it is obtained by cutting out the film-shaped adhesive to be evaluated, and it is not necessary to prepare a sample by laminating a plurality of adhesive pieces cut out from the film-shaped adhesive. That is, the thickness of the sample S may be the same as the thickness of the film-like adhesive.
  • the width of the sample S (Ws in FIG. 2) is, for example, 1 to 30 mm, and may be 3 to 8 mm. The width may be set appropriately according to the situation of the measuring device.
  • the length of the sample S (Ls in FIG. 2) is, for example, 5 to 50 mm, and may be 10 to 30 mm or 6 to 9 mm.
  • the length of the sample S depends on the size of the opening 14a of the sample fixing jig 14.
  • the shape of the sample fixing jig 14 and the size of the sample S may be other than those described above as long as the cutting test can be performed.
  • the push jig 15 is made of a columnar member having a conical tip portion 15a.
  • the diameter of the indentation jig 15 (R in FIG. 3) is, for example, 3 to 15 mm, and may be 5 to 10 mm.
  • the angle of the tip portion 15a ( ⁇ in FIG. 3) is, for example, 40 to 120 °, and may be 60 to 100 °.
  • the split test is carried out in a constant temperature bath set to a predetermined temperature.
  • the constant temperature bath may be set to a constant temperature in the range of ⁇ 15 ° C. to 0 ° C. (assumed cooling expand temperature).
  • TLF-R3-F-W-PL-S manufactured by Aitec Inc. can be used as the constant temperature bath.
  • An autograph (for example, AZT-CA01 manufactured by A & D Co., Ltd., load cell 50N, compression mode) is used to obtain a breaking work W, a breaking strength P, and a breaking elongation L.
  • the relative speed between the pushing jig 15 and the sample S is, for example, 1 to 100 mm / min, and may be 5 to 20 mm / min. If this relative velocity is too fast, it tends to be difficult to obtain sufficient data on the splitting process, and if it is too slow, the stress is relaxed and it tends to be difficult to reach splitting.
  • the pushing distance of the pushing jig 15 is, for example, 1 to 50 mm, and may be 5 to 30 mm. If the pushing distance is too short, it tends not to be cut.
  • FIG. 4 is a graph showing an example of the result of the cutting test.
  • the split work W is an area surrounded when a graph is created with the vertical axis as a load and the horizontal axis as the amount of pushing until the sample S breaks.
  • the breaking strength P is the load when the sample S is broken.
  • the split elongation L is the amount of elongation of the sample S when the sample S is broken.
  • the split elongation L may be calculated using a trigonometric function from the pushing distance when the sample S is broken and the width of the opening 14a of the sample fixing jig 14.
  • the shape adhesive tends to have excellent breakability when actually cooled and expanded in stealth dicing.
  • the split coefficient m (dimensionless) may be more than 0 and 70 or less, and may be 10 to 60 or 15 to 55.
  • the split coefficient m is a parameter relating to the stretchability of the film-like adhesive under low temperature conditions. When the splitting coefficient m exceeds 70, the splitting property due to the cooling expand tends to be insufficient due to the excessive stretchability of the film-like adhesive. When the split coefficient m is 15 or more, the stress propagation tends to be good.
  • the breaking resistance R may be 0 N / mm 2 or more and 40 N / mm 2 or less, and may be 0 N / mm 2 or more and 35 N / mm 2 or less or 1 to 30 N / mm 2 .
  • a film-like adhesive having a breaking coefficient m and a breaking resistance R in the above ranges can be suitably used for stealth dicing.
  • a film-like adhesive having a breaking coefficient m and a breaking resistance R in the above ranges can be applied to a manufacturing process of a semiconductor device in which cooling expansion is carried out.
  • FIG. 5 is a schematic cross-sectional view showing an embodiment of the adhesive sheet.
  • the adhesive sheet 100 shown in FIG. 5 includes a base material 2 and a film-like adhesive 1 provided on the base material 2.
  • FIG. 6 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
  • the adhesive sheet 110 shown in FIG. 6 is a cover film provided on a surface opposite to the base material 2, the film-like adhesive 1 provided on the base material 2, and the base material 2 of the film-like adhesive 1. It is equipped with 3.
  • the same material as the above-mentioned support film can be used.
  • the cover film 3 is used to prevent damage or contamination of the film-like adhesive, and may be, for example, a polyethylene film, a polypropylene film, a surface peeling agent-treated film, or the like.
  • the thickness of the cover film 3 may be, for example, 15 to 200 ⁇ m or 70 to 170 ⁇ m.
  • the adhesive sheets 100 and 110 can be formed by applying an adhesive composition (adhesive varnish) to the base material 2 in the same manner as the above method for forming a film-like adhesive.
  • the method of applying the adhesive composition to the base material 2 may be the same as the method of applying the above-mentioned adhesive composition (adhesive varnish) to the support film.
  • the adhesive sheet 110 can be obtained by further laminating the cover film 3 on the film-like adhesive 1.
  • the adhesive sheets 100 and 110 can be formed by using a film-like adhesive prepared in advance.
  • the adhesive sheet 100 can be formed by laminating on the base material 2 under predetermined conditions (for example, at room temperature (20 ° C.) or in a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be continuously manufactured and is excellent in efficiency, it may be formed by using a roll laminator in a heated state.
  • FIG. 7 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
  • the adhesive sheet 120 (dicing / die bonding integrated adhesive sheet) shown in FIG. 7 includes a dicing tape 8 and a film-like adhesive 1 provided on the dicing tape 8.
  • the laminating process on the semiconductor wafer is performed once, so that the work efficiency can be improved.
  • the dicing tape 8 includes a base film 7 and an adhesive layer 6 provided on the base film 7.
  • the base film 7 examples include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. If necessary, these base films 7 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment.
  • plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. If necessary, these base films 7 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment.
  • the pressure-sensitive adhesive layer 6 is not particularly limited as long as it has a sufficient adhesive strength that the semiconductor element does not scatter during dicing and has a low adhesive strength that does not damage the semiconductor element in the subsequent pickup process of the semiconductor element. , Conventionally known materials in the field of dicing tape can be used.
  • the pressure-sensitive adhesive layer 6 may be either a pressure-sensitive type or a radiation-curable type.
  • the thickness of the dicing tape 8 (base film 7 and the pressure-sensitive adhesive layer 6) may be 60 to 150 ⁇ m or 70 to 130 ⁇ m from the viewpoint of economy and handleability of the film.
  • the adhesive sheet 120 (adhesive sheet integrated with dicing and dicing) can be obtained, for example, by adhering the adhesive layer 6 of the dicing tape 8 and the film-like adhesive 1.
  • the film-like adhesive and the adhesive sheet may be used for manufacturing a semiconductor device, and the film-like adhesive and the dicing tape are applied to a semiconductor wafer or a semiconductor element (semiconductor chip) that has already been fragmented at 0 ° C. After bonding at ⁇ 90 ° C., a semiconductor device with a film-like adhesive is obtained by splitting with a rotary blade, a laser or stretching, and then the semiconductor device with the film-like adhesive is used as an organic substrate, a lead frame, or another semiconductor. It may be used in the manufacture of a semiconductor device including a step of adhering to an element.
  • semiconductor wafers include single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like.
  • the film-like adhesive and adhesive sheet include semiconductor elements such as ICs and LSIs, lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; and polyimide resins on a base material such as glass non-woven fabric. Impregnated and cured with a plastic such as an epoxy resin; it can be used as an adhesive for bonding to a support member for mounting a semiconductor such as ceramics such as alumina.
  • the film-like adhesive and the adhesive sheet are also suitably used as an adhesive for adhering a semiconductor element to a semiconductor element in a Stacked-PKG having a structure in which a plurality of semiconductor elements are stacked.
  • one of the semiconductor elements becomes a support member on which the semiconductor element is mounted.
  • the film-like adhesive and the adhesive sheet are, for example, a protective sheet for protecting the back surface of the semiconductor element of the flip-chip type semiconductor device, and for sealing between the surface of the semiconductor element of the flip-chip type semiconductor device and the adherend. It can also be used as a sealing sheet or the like.
  • the semiconductor device manufactured by using the film-like adhesive will be specifically described below with reference to the drawings.
  • semiconductor devices having various structures have been proposed, and the use of the film-like adhesive according to the present embodiment is not limited to the semiconductor devices having the structures described below.
  • FIG. 8 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the semiconductor device 200 shown in FIG. 8 is provided between the semiconductor element 9, the support member 10 on which the semiconductor element 9 is mounted, and the semiconductor element 9 and the support member 10, and is an adhesive member that adheres the semiconductor element 9 and the support member 10. (Cured product 1c of film-like adhesive) is provided.
  • the connection terminal (not shown) of the semiconductor element 9 is electrically connected to the external connection terminal (not shown) via the wire 11 and is sealed by the sealing material 12.
  • FIG. 9 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the first-stage semiconductor element 9a is adhered to the support member 10 on which the terminal 13 is formed by an adhesive member (cured product 1c of a film-like adhesive), and the first-stage semiconductor element 9a is attached.
  • the second-stage semiconductor element 9b is further adhered to the top by an adhesive member (cured product 1c of a film-like adhesive).
  • the connection terminals (not shown) of the first-stage semiconductor element 9a and the second-stage semiconductor element 9b are electrically connected to the external connection terminal via the wire 11 and sealed by the sealing material 12.
  • the film-like adhesive according to the present embodiment can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.
  • a film-like adhesive is interposed between the semiconductor element and the support member or between the semiconductor element and the semiconductor element, and these are heat-bonded to both of them. Is then adhered, and if necessary, it is obtained through a wire bonding step, a sealing step with a sealing material, a heating and melting step including reflow with solder, and the like.
  • the heating temperature in the heat crimping step is usually 20 to 250 ° C.
  • the load is usually 0.1 to 200 N
  • the heating time is usually 0.1 to 300 seconds.
  • the support member or the support member or It may be a method of attaching to a semiconductor element.
  • the method for manufacturing a semiconductor device using a dicing / die bonding integrated adhesive sheet is not limited to the method for manufacturing a semiconductor device described below.
  • the semiconductor wafer is pressure-bonded to the film-like adhesive 1 in the adhesive sheet 120 (dicing / die-bonding integrated adhesive sheet), and the semiconductor wafer is bonded and held to be fixed (mounting process).
  • This step may be performed while pressing with a pressing means such as a crimping roll.
  • the semiconductor wafer is cut into a predetermined size to manufacture a plurality of individualized semiconductor elements (semiconductor chips) with a film-like adhesive. Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method. Further, in this step, for example, a cutting method called full cut in which a dicing tape is cut, a method in which a half cut is made in a semiconductor wafer and the semiconductor wafer is cooled and pulled to be divided, a cutting method using a laser, and the like can be adopted.
  • the dicing apparatus used in this step is not particularly limited, and conventionally known dicing apparatus can be used.
  • the pickup method is not particularly limited, and various conventionally known methods can be adopted. For example, a method in which individual semiconductor elements are pushed up from the dicing / die bonding integrated adhesive sheet side by a needle and the pushed up semiconductor elements are picked up by a pickup device and the like can be mentioned.
  • the adhesive layer is a radiation (for example, ultraviolet) curable type
  • the pickup is performed after irradiating the adhesive layer with radiation.
  • the adhesive force of the adhesive layer against the film-like adhesive is reduced, and the semiconductor element can be easily peeled off.
  • pickup is possible without damaging the semiconductor element.
  • the semiconductor element with the film-like adhesive formed by dicing is bonded to the support member for mounting the semiconductor element via the film-like adhesive.
  • Adhesion may be done by crimping.
  • the conditions for the die bond are not particularly limited and can be set as needed. Specifically, for example, it can be performed within the range of a die bond temperature of 80 to 160 ° C., a bonding load of 5 to 15 N, and a bonding time of 1 to 10 seconds.
  • thermosetting the film-like adhesive may be provided.
  • thermosetting the film-like adhesive that adheres the support member and the semiconductor element by the above-mentioned bonding process more firmly bonding and fixing becomes possible.
  • pressure may be applied at the same time to cure.
  • the heating temperature in this step can be appropriately changed depending on the constituent components of the film-shaped adhesive.
  • the heating temperature may be, for example, 60 to 200 ° C.
  • the temperature or pressure may be changed step by step.
  • a wire bonding process is performed in which the tip of the terminal portion (inner lead) of the support member and the electrode pad on the semiconductor element are electrically connected by a bonding wire.
  • a bonding wire for example, a gold wire, an aluminum wire, a copper wire, or the like is used.
  • the temperature at which wire bonding is performed may be in the range of 80 to 250 ° C or 80 to 220 ° C.
  • the heating time may be several seconds to several minutes.
  • the wiring may be performed by a combination of vibration energy by ultrasonic waves and crimping energy by applied pressurization in a state of being heated within the above temperature range.
  • a sealing step of sealing the semiconductor element with the sealing resin is performed.
  • This step is performed to protect the semiconductor element or the bonding wire mounted on the support member.
  • This step is performed by molding a sealing resin with a mold.
  • the sealing resin may be, for example, an epoxy-based resin.
  • the substrate and the residue are embedded by the heat and pressure at the time of sealing, and it is possible to prevent peeling due to air bubbles at the bonding interface.
  • the under-cured sealing resin is completely cured in the sealing step. Even if the film-like adhesive is not heat-cured in the sealing step, the film-like adhesive can be heat-cured together with the curing of the sealing resin to be bonded and fixed in this step.
  • the heating temperature in this step can be appropriately set depending on the type of the sealing resin, and may be, for example, in the range of 165 to 185 ° C., and the heating time may be about 0.5 to 8 hours.
  • the semiconductor element with a film-like adhesive bonded to the support member is heated using a reflow furnace.
  • a resin-sealed semiconductor device may be surface-mounted on the support member.
  • the surface mount method include reflow soldering in which solder is previously supplied onto a printed wiring board and then heated and melted by warm air or the like to perform soldering.
  • the heating method include hot air reflow and infrared reflow.
  • the heating method may be one that heats the whole or one that heats a local part.
  • the heating temperature may be, for example, in the range of 240 to 280 ° C.
  • (A) Component Thermosetting resin (A-1) YDCN-700-10 (trade name, manufactured by Nippon Steel & Sumitomo Metal Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 209 g / eq)
  • SG-P3 trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylic rubber
  • Acrylic rubber solution in which a part of the constituent unit of the acrylic rubber is changed in the acrylic rubber in the acrylic rubber solution (SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylic rubber)).
  • Acrylic rubber solution in which a part of the constituent unit of the acrylic rubber is changed in the acrylic rubber in the acrylic rubber solution (SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylic rubber)).
  • Acrylic rubber solution in which a part of the constituent unit of the acrylic rubber is changed in the acrylic rubber in the acrylic rubber solution (SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylic rubber)).
  • Component (C2) Acrylic rubber in an elastomer (C2-1) acrylic rubber solution other than the component (C1) (SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylic rubber)) of the acrylic rubber.
  • SG-P3 trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylic rubber
  • D Inorganic filler (D-1) R972 (trade name, manufactured by Nippon Aerosil Co., Ltd., silica particles, average particle size: 0.016 ⁇ m)
  • E Ingredient: Coupling agent (E-1) A-189 (trade name, manufactured by Nippon Unicar Co., Ltd., ⁇ -mercaptopropyltrimethoxysilane) (E-2) A-1160 (trade name, manufactured by Nippon Unicar Co., Ltd., ⁇ -ureidopropyltriethoxysilane)
  • the prepared adhesive varnish was filtered through a 100 mesh filter and vacuum defoamed.
  • a polyethylene terephthalate (PET) film having been subjected to a mold release treatment having a thickness of 38 ⁇ m was prepared, and an adhesive varnish after vacuum defoaming was applied onto the PET film.
  • the applied adhesive varnish was heat-dried at 90 ° C. for 5 minutes and then at 130 ° C. for 5 minutes in two steps to obtain film-like adhesives of Examples 1 to 3 and Comparative Example 1 in the B stage state. ..
  • the thickness of the film-shaped adhesive was adjusted to 10 ⁇ m depending on the amount of the adhesive varnish applied.
  • Adhesive pieces (width 5 mm ⁇ length 100 mm) were cut out from the film-like adhesives of Examples 1 to 6 and Comparative Example 1, respectively.
  • the adhesive piece was fixed to a pair of jigs (thick paper), and the part of the adhesive piece protruding from the jig was removed.
  • a sample to be evaluated (width 5 mm ⁇ length 23 mm) was obtained.
  • a split test was carried out in a constant temperature bath (TLF-R3-F-W-PL-S manufactured by Aitec Inc.) set to a predetermined temperature condition.
  • the film-like adhesives of Examples 1 to 6 have a splitting coefficient m of 70 or less, a breaking resistance R of 40 N / mm 2 or less, and a splittability evaluation by cooling expand of "A”. Met.
  • the film-like adhesive of Comparative Example 1 had a breaking coefficient m of more than 70, a breaking resistance R of more than 40 N / mm 2 , and a breaking property evaluation by cooling expand was “B”. .. From these results, it was confirmed that the film-like adhesive of the present invention has excellent breakability by cooling expand.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

L'invention divulgue un adhésif sous forme d'un film, destiné à coller un élément semi-conducteur à une pièce support pour y monter l'élément semi-conducteur. L'adhésif sous forme de film comprend une résine thermodurcissable, un durcisseur et un ou plusieurs élastomères. Les élastomères comprennent un élastomère satisfaisant aux conditions (i) et (ii) ci-après.　Condition (i) : Avoir une température de transition vitreuse de 12 °C ou plus.　Condition (ii) : Avoir une masse moléculaire moyenne en masse de 800 000 ou moins.
PCT/JP2021/032482 2020-09-08 2021-09-03 Adhésif sous forme de film, feuille adhésive et dispositif à semi-conducteurs et procédé de préparation associé WO2022054718A1 (fr)

Priority Applications (2)

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CN202180054989.2A CN116670240A (zh) 2020-09-08 2021-09-03 膜状黏合剂、黏合片以及半导体装置及其制造方法
KR1020237008244A KR20230062565A (ko) 2020-09-08 2021-09-03 필름상 접착제, 접착 시트, 및 반도체 장치 및 그 제조 방법

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JP2020150430A JP2022044992A (ja) 2020-09-08 2020-09-08 フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008074928A (ja) * 2006-09-20 2008-04-03 Hitachi Chem Co Ltd 半導体用接着フィルム及びこれを用いた半導体装置
JP2009209345A (ja) * 2008-02-06 2009-09-17 Hitachi Chem Co Ltd 粘接着シート
JP2017114945A (ja) * 2015-12-21 2017-06-29 日立化成株式会社 ダイボンディングフィルム
JP2020088118A (ja) * 2018-11-22 2020-06-04 日立化成株式会社 フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008074928A (ja) * 2006-09-20 2008-04-03 Hitachi Chem Co Ltd 半導体用接着フィルム及びこれを用いた半導体装置
JP2009209345A (ja) * 2008-02-06 2009-09-17 Hitachi Chem Co Ltd 粘接着シート
JP2017114945A (ja) * 2015-12-21 2017-06-29 日立化成株式会社 ダイボンディングフィルム
JP2020088118A (ja) * 2018-11-22 2020-06-04 日立化成株式会社 フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法

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