WO2023048188A1 - Film adhésif, film deux-en-un pour la découpe et le fixage de puces, dispositif à semi-conducteur et son procédé de fabrication - Google Patents

Film adhésif, film deux-en-un pour la découpe et le fixage de puces, dispositif à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2023048188A1
WO2023048188A1 PCT/JP2022/035193 JP2022035193W WO2023048188A1 WO 2023048188 A1 WO2023048188 A1 WO 2023048188A1 JP 2022035193 W JP2022035193 W JP 2022035193W WO 2023048188 A1 WO2023048188 A1 WO 2023048188A1
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Prior art keywords
adhesive
film
semiconductor element
mass
semiconductor
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PCT/JP2022/035193
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English (en)
Japanese (ja)
Inventor
和弘 山本
強 田澤
知世 金子
利泰 秋吉
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株式会社レゾナック
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Priority to CN202280062217.8A priority Critical patent/CN117999641A/zh
Publication of WO2023048188A1 publication Critical patent/WO2023048188A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Definitions

  • the present disclosure relates to a film adhesive, a dicing/die bonding integrated film, a semiconductor device, and a method for manufacturing the same.
  • laminated MCPs Multi Chip Packages
  • semiconductor elements semiconductor elements (semiconductor chips) are stacked in multiple layers
  • speeding up, high-density, high-integration, etc. of semiconductor packages are being promoted.
  • semiconductor wafers are becoming thinner, and problems such as wafer cracking during processing are likely to occur, which may cause a problem of yield reduction. Therefore, as the thickness of semiconductor wafers becomes thinner (for example, 50 ⁇ m or less), there is a shift from conventional physical grinding methods to new processing methods.
  • cooling expansion expansion under cooling conditions
  • a conventional dicing/die-bonding integrated film is applied to cooling expansion
  • an adhesive layer made of a film-like adhesive die-bonding film
  • problems arise such as a decrease in yield and a decrease in production time efficiency for sorting uncut products.
  • the film adhesive die bonding film of the die bonding integrated film
  • the film adhesive must be thin (for example, thickness 20 ⁇ m or less). It has been demanded.
  • the thickness of the conventional film adhesive is reduced, the die shear strength may not be ensured, and there is still room for improvement.
  • the main object of the present disclosure is to provide a film-like adhesive that is excellent in splittability by cooling expansion and has sufficient die shear strength when thinned.
  • the film adhesive contains a thermosetting resin, a curing agent, an elastomer, and an inorganic filler having an average particle size of 400 nm or less.
  • the content of the inorganic filler is 18-40% by mass based on the total amount of the film adhesive.
  • the content of the inorganic filler is 18% by mass or more based on the total amount of the film adhesive, the splitting property of the film adhesive by cooling expansion tends to be excellent.
  • the content of the inorganic filler is 40% by mass or less based on the total amount of the film adhesive, the film adhesive tends to have sufficient die shear strength when thinned.
  • the total content of the thermosetting resin and curing agent is 25% by mass or less based on the total amount of the film adhesive.
  • the amount of the elastomer is sufficient, so that thin film coating tends to be excellent. be.
  • the content of the elastomer may be 40% by mass or more based on the total amount of the film adhesive.
  • the content of the inorganic filler may be 22 parts by mass or more with respect to 100 parts by mass of the total amount of the thermosetting resin, curing agent, and elastomer.
  • the content of the elastomer may be 200 parts by mass or more with respect to 100 parts by mass of the total amount of the thermosetting resin and curing agent.
  • the thickness of the film adhesive may be 20 ⁇ m or less.
  • the film-like adhesive may be used in the manufacturing process of a semiconductor device in which multiple semiconductor elements are laminated.
  • the semiconductor device may be a stacked MCP (Multi Chip Package) in which semiconductor elements (semiconductor chips) are stacked in multiple stages, or may be a three-dimensional NAND memory.
  • the dicing/die-bonding integrated film includes a substrate layer, an adhesive layer, and an adhesive layer made of the film-like adhesive in this order.
  • the semiconductor device includes a semiconductor element, a support member on which the semiconductor element is mounted, and an adhesive member provided between the semiconductor element and the support member to bond the semiconductor element and the support member.
  • the adhesive member is a cured product of the film adhesive described above.
  • the semiconductor device may further include another semiconductor element laminated on the surface of the semiconductor element.
  • Another aspect of the present disclosure relates to a method of manufacturing a semiconductor device.
  • the film-like adhesive is interposed between the semiconductor element and the supporting member or between the first semiconductor element and the second semiconductor element, and the semiconductor element and the A step of adhering the support member or the first semiconductor element and the second semiconductor element is provided.
  • Another aspect of the method for manufacturing the semiconductor device includes the steps of: attaching a semiconductor wafer to the adhesive layer of the dicing/die bonding integrated film; dicing the semiconductor wafer to which the adhesive layer is attached; forming a plurality of individualized semiconductor elements with adhesive pieces by expanding the material layer under cooling conditions; picking up the semiconductor elements with adhesive pieces from the adhesive layer; and removing the semiconductor elements with adhesive pieces. and gluing to the support member via adhesive strips.
  • the method of manufacturing a semiconductor device may further comprise a step of adhering, via an adhesive piece, another semiconductor element with an adhesive piece to the surface of the semiconductor element adhered to the support member.
  • the present disclosure includes the film adhesive according to [1] to [7], the dicing/die bonding integrated film according to [8], the semiconductor device according to [9] and [10], and [11].
  • a semiconductor device and a manufacturing method thereof according to to [13] are provided.
  • [1] Contains a thermosetting resin, a curing agent, an elastomer, and an inorganic filler having an average particle size of 400 nm or less, and the content of the inorganic filler is 18 based on the total amount of the film adhesive. 40% by mass, and the total content of the thermosetting resin and the curing agent is 25% by mass or less based on the total amount of the film adhesive.
  • [5] The film adhesive according to any one of [1] to [4], which has a thickness of 20 ⁇ m or less.
  • [6] The film adhesive according to any one of [1] to [5], which is used in the manufacturing process of a semiconductor device formed by laminating a plurality of semiconductor elements.
  • [8] A dicing/die bonding integrated film comprising a substrate layer, an adhesive layer, and an adhesive layer made of the film-like adhesive according to any one of [1] to [5] in this order.
  • a semiconductor element a support member for mounting the semiconductor element, and an adhesive member provided between the semiconductor element and the support member for bonding the semiconductor element and the support member, wherein the adhesive member is a cured product of the film adhesive according to any one of [1] to [5].
  • the semiconductor device according to [9] further comprising another semiconductor element laminated on the surface of the semiconductor element.
  • a method of manufacturing a semiconductor device comprising a step of adhering a semiconductor element with an adhesive piece to a support member via an adhesive piece.
  • the method of manufacturing a semiconductor device according to [12] further comprising the step of adhering, via an adhesive piece, another semiconductor element with an adhesive piece to the surface of the semiconductor element adhered to the support member.
  • a film-like adhesive that is excellent in splittability by cooling expansion and has sufficient die shear strength when thinned.
  • a dicing/die-bonding integrated film using such a film-like adhesive, a semiconductor device, and a method for manufacturing the same are provided. Further, according to the present disclosure, there is provided a method of manufacturing a semiconductor device using such a dicing/die bonding integrated film.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of a film adhesive.
  • FIG. 2 is a perspective view schematically showing a sample fixed to a jig in a breaking test.
  • FIG. 3 is a cross-sectional view schematically showing a state in which a load is applied to a sample by a pressing jig in a breaking test.
  • FIG. 4 is a graph schematically showing an example of the results of the breaking test.
  • FIG. 5 is a schematic cross-sectional view showing an embodiment of a dicing/die bonding integrated film.
  • FIG. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
  • FIG. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • FIG. 8 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the numerical range indicated using “to” indicates the range including the numerical values before and after “to” as the minimum and maximum values, respectively.
  • the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in other steps. good.
  • the upper and lower limits of the numerical ranges may be replaced with the values shown in the examples.
  • (meth)acrylate means acrylate or its corresponding methacrylate.
  • the film adhesive comprises a thermosetting resin (hereinafter sometimes referred to as "(A) component”), a curing agent (hereinafter sometimes referred to as “(B) component”), and an elastomer (hereinafter sometimes referred to as “(B) component”). and an inorganic filler having an average particle diameter of 400 nm or less (hereinafter sometimes referred to as "(D) component”).
  • the film adhesive contains a coupling agent (hereinafter sometimes referred to as "(E) component”), curing An accelerator (hereinafter sometimes referred to as “component (F)”) and other components may be further contained.
  • the film-like adhesive comprises (A) component, (B) component, (C) component, and (D) component, and other components added as necessary ((E) component, (F) component, other component, etc.) can be obtained by forming the adhesive composition into a film.
  • the film-like adhesive adheresive composition
  • the film-like adhesive may be in a semi-cured (B stage) state and then in a cured (C stage) state after a curing treatment.
  • Thermosetting resin Component (A) may contain an epoxy resin, or may consist of one or more epoxy resins, from the viewpoint of adhesiveness.
  • Epoxy resins can be used without any particular restrictions as long as they have an epoxy group in the molecule.
  • Examples of epoxy resins include bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S type epoxy resin; phenol novolak type epoxy resin; cresol novolak type epoxy resin; bisphenol A novolac type epoxy resin; ; stilbene type epoxy resin; triazine skeleton-containing epoxy resin; fluorene skeleton-containing epoxy resin; triphenolmethane type epoxy resin; biphenyl type epoxy resin; xylylene type epoxy resin; and polycyclic aromatic diglycidyl ether compounds such as anthracene. You may use these individually by 1 type or in combination of 2 or more types.
  • the epoxy resin may contain a cresol novolak type epoxy resin or a fluorene skeleton-containing epoxy resin from the viewpoint of film tackiness, flexibility, and the like.
  • the epoxy equivalent of the epoxy resin is not particularly limited, but may be 90-300 g/eq, 110-290 g/eq, or 130-280 g/eq. When the epoxy equivalent of the epoxy resin is in such a range, better reactivity and fluidity tend to be obtained.
  • the content of component (A) may be 1% by mass or more, 3% by mass or more, or 5% by mass or more, and may be 30% by mass or less, 20% by mass or less, or It may be 15% by mass or less.
  • the content of component (A) is in this range, the elastic modulus after curing tends to be more excellent.
  • the flexibility before curing tends to be more excellent.
  • component (B) Component: Curing Agent Any commonly used curing agent for component (A) can be used.
  • component (A) contains an epoxy resin (consisting of one or more epoxy resins)
  • component (B) includes, for example, phenolic resins, ester compounds, aromatic amines, aliphatic amines, acid anhydrides. etc.
  • the component (B) may contain a phenolic resin, or may consist of one or more phenolic resins.
  • Phenolic resins include phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and/or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and aldehydes such as formaldehyde. It can be a polycondensation product with Polycondensation is usually carried out in the presence of a catalyst such as an acid or a base. A phenolic resin obtained when an acid catalyst is used is particularly called a novolak-type phenolic resin.
  • novolac-type phenolic resins examples include phenol/formaldehyde novolac resin, cresol/formaldehyde novolac resin, xylenol/formaldehyde novolac resin, resorcinol/formaldehyde novolac resin, phenol-naphthol/formaldehyde novolac resin, and the like.
  • Phenol resins include, for example, phenols and/or naphthols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol, and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. Synthesized phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl type phenol resins, phenyl aralkyl type phenol resins and the like are also included.
  • the hydroxyl equivalent of the phenolic resin may be 80-300 g/eq, 90-280 g/eq, or 100-250 g/eq.
  • the storage elastic modulus tends to be further improved, and when it is 300 g/eq or less, it becomes possible to prevent problems due to the generation of foaming, outgassing, and the like.
  • the softening point of the phenolic resin may be 50-140°C, 55-130°C, or 60-120°C.
  • the softening point means a value measured by the ring and ball method according to JIS K7234.
  • component (B) may be 1% by mass or more, 2% by mass or more, or 3% by mass or more, and may be 20% by mass or less, 15% by mass or less, or It may be 10% by mass or less.
  • the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenolic resin is From the viewpoint of curability, 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/ 0.40, or 0.45/0.55 to 0.55/0.45.
  • the corresponding weight ratio is 0.30/0.70 or more (the epoxy equivalent of the epoxy resin is 0.30 or more)
  • more sufficient curability tends to be obtained.
  • the corresponding weight ratio is 0.70/0.30 or less (the epoxy equivalent of the epoxy resin is 0.70 or less) it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity. can be done.
  • the total content of components (A) and (B) is 25% by mass or less based on the total amount of the film adhesive. When the total content of component (A) and component (B) is in this range, the amount of component (C) is sufficient, so that thin film coatability tends to be excellent.
  • the total content of components (A) and (B) is 22% by mass or less, 20% by mass or less, or 18% by mass or less based on the total amount of the film adhesive, from the viewpoint of handleability. good too.
  • the total content of components (A) and (B) may be 1% by mass or more, 5% by mass or more, 10% by mass or more, or 12% by mass or more based on the total amount of the film adhesive. . When the total content of component (A) and component (B) is in this range, the adhesiveness tends to be further improved.
  • component (C) Elastomer
  • component (C) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, and butadiene resins; modified products of these resins. You may use these individually by 1 type or in combination of 2 or more types.
  • the component (C) is derived from a (meth)acrylic ester because it has few ionic impurities and is excellent in heat resistance, it is easy to ensure the connection reliability of a semiconductor device, and it is excellent in fluidity. It may be an acrylic resin (acrylic rubber) having structural units as a main component.
  • the content of structural units derived from (meth)acrylic acid ester in component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of structural units.
  • the acrylic resin (acrylic rubber) may contain structural units derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
  • the glass transition temperature (Tg) of component (C) may be -50 to 50°C or -30 to 30°C.
  • Tg of component (C) is -50°C or higher, it tends to be possible to prevent the flexibility of the adhesive composition from becoming too high. This makes it easier to cut the film-like adhesive during wafer dicing, making it possible to prevent the occurrence of burrs.
  • Tg of the component (C) is 50° C. or less, it tends to be possible to suppress a decrease in the flexibility of the film-like adhesive. This tends to make it easier to sufficiently fill voids when the film-like adhesive is attached to the semiconductor wafer. Also, it is possible to prevent chipping during dicing due to deterioration of adhesion of the semiconductor wafer.
  • the glass transition temperature (Tg) means a value measured using a DSC (differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).
  • the Tg of the component (C) is the type and content of structural units that constitute the component (C) (structural units derived from (meth)acrylic acid esters when the component (C) is an acrylic resin (acrylic rubber)). can be adjusted to a desired range by adjusting .
  • the weight average molecular weight (Mw) of component (C) may be 100,000 to 3,000,000 or 200,000 to 1,000,000.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
  • component (C) Commercially available products of component (C) include SG-70L, SG-708-6, WS-023 EK30, SG-P3, SG-280 EK23, SG-80H, HTR-860P, HTR-860P-3, HTR- 860P-3CSP, HTR-860P-3CSP-3DB, HTR-860P-30B (all manufactured by Nagase ChemteX Corporation) and the like.
  • the content of component (C) may be 40% by mass or more, 45% by mass or more, or 50% by mass or more based on the total amount of the film adhesive. When the content of the component (C) is in such a range, it tends to be more excellent in thin film coatability.
  • the content of component (C) may be 80% by mass or less, 75% by mass or less, or 70% by mass or less based on the total amount of the film adhesive. When the content of component (C) is in this range, the content of components (A) and (B) can be sufficiently ensured, and other properties tend to be compatible.
  • the content of component (C) may be 200 parts by mass or more with respect to 100 parts by mass of the total amount of components (A) and (B). When the content of the component (C) is in such a range, it tends to be more excellent in thin film coatability.
  • the content of component (C) may be 250 parts by mass or more, 300 parts by mass or more, or 350 parts by mass or more with respect to 100 parts by mass of the total amount of components (A) and (B).
  • the content of component (C) may be 600 parts by mass or less, 550 parts by mass or less, or 500 parts by mass or less with respect to 100 parts by mass of the total amount of components (A) and (B). When the content of component (C) is in this range, the content of components (A) and (B) can be sufficiently ensured, and other properties tend to be compatible.
  • inorganic filler having an average particle size of 400 nm or less
  • inorganic fillers as component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, Calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica and the like. These may be used singly or in combination of two or more as long as the average particle diameter is 400 nm or less.
  • the inorganic filler may be silica from the viewpoint of adjusting the melt viscosity.
  • the shape of the inorganic filler is not particularly limited, but may be spherical.
  • the average particle diameter of component (D) is 400 nm or less, and may be 350 nm or less, or 300 nm or less, from the viewpoint of thin film coatability and adhesiveness.
  • the average particle size of the inorganic filler as component (D) may be, for example, 10 nm or more, 30 nm or more, 100 nm or more, or 150 nm or more.
  • the average particle size means the average particle size determined by the dynamic light scattering method.
  • the average particle size of component (D) can also be obtained by using a film-like adhesive containing component (D). In this case, the residue obtained by heating the film adhesive to decompose the resin component is dispersed in a solvent to prepare a dispersion liquid.
  • the average particle size of component (D) can be determined.
  • Component (D) may be composed of, for example, one or more inorganic fillers having an average particle size of 400 nm or less, and one or more inorganic fillers having an average particle size of 10 to 400 nm and an average particle size of 400 nm or less.
  • the content of component (D) is 18 to 40% by mass based on the total amount of the film adhesive.
  • the content of component (D) is 18% by mass or more, and may be 20% by mass or more, 22% by mass or more, or 24% by mass or more based on the total amount of the film adhesive.
  • the content of component (D) is 40% by mass or less, and may be 38% by mass or less, 35% by mass or less, or 32% by mass or less based on the total amount of the film adhesive.
  • the film adhesive tends to have sufficient die shear strength when thinned.
  • the content of component (D) based on the total amount of the film-like adhesive can also be obtained by using a film-like adhesive containing component (D).
  • the mass of the film-like adhesive and the mass of the residue obtained by heating the film-like adhesive to decompose the resin component are determined, and the content of the component (D) can be determined from the relationship between these masses.
  • the mass of the residue obtained by heating the film adhesive to decompose the resin component may be the mass measured after the residue is washed with a solvent and dried.
  • the content of component (D) may be 22 parts by mass or more, 25 parts by mass or more, and 28 parts by mass with respect to the total amount of 100 parts by mass of components (A), (B), and (C). or more, or 30 parts by mass or more.
  • the film adhesive is divided by cooling expansion.
  • the content of component (D) is 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, or 55 parts by mass with respect to 100 parts by mass of the total amount of components (A), (B), and (C). parts or less, or 50 parts by mass or less.
  • the film adhesive is thinned. It tends to have sufficient die shear strength.
  • the film adhesive may contain an inorganic filler with an average particle size of more than 400 nm in addition to the component (D).
  • an inorganic filler having an average particle size of more than 400 nm is preferred.
  • substantially does not contain means that the content of the inorganic filler having an average particle size of more than 400 nm is based on the total amount of the component (D) and the inorganic filler having an average particle size of more than 400 nm. , 5% by mass or less, 3% by mass or less, 1% by mass or less, or 0.1% by mass or less.
  • the (E) component may be a silane coupling agent.
  • Silane coupling agents include, for example, ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, and the like. be done.
  • Component (F) Curing Accelerator
  • component (F) include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. You may use these individually by 1 type or in combination of 2 or more types. Among these, imidazoles and derivatives thereof may be used as the component (F) from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. You may use these individually by 1 type or in combination of 2 or more types.
  • the film adhesive may further contain other components.
  • Other components include, for example, pigments, ion trapping agents, antioxidants, and the like.
  • the total content of component (E), component (F), and other components is 0.1% by mass or more, 0.3% by mass or more, or 0.5% by mass, based on the total amount of the film adhesive. % or more, and may be 20% by mass or less, 10% by mass or less, or 5% by mass or less.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of a film adhesive.
  • the film adhesive 1 shown in FIG. 1 can be a die bonding film used for bonding a semiconductor chip and a supporting member or bonding semiconductor chips to each other.
  • the film adhesive 1 is obtained by molding an adhesive composition into a film.
  • the film-like adhesive 1 is usually in a semi-cured (B stage) state, and can be in a cured (C stage) state after a curing treatment.
  • the film adhesive 1 can be formed by applying an adhesive composition to a support film.
  • a varnish of an adhesive composition may be used.
  • the components (A), (B), (C), and (D), and optionally added components are mixed or kneaded in a solvent to prepare the adhesive varnish.
  • the obtained adhesive varnish is applied to a support film, and the solvent is removed by heating and drying to obtain the film-like adhesive 1.
  • the support film is not particularly limited as long as it can withstand the heat drying described above. It's okay.
  • the support film may be a multi-layer film in which two or more types are combined, or the surface thereof may be treated with a release agent such as a silicone-based or silica-based release agent.
  • the thickness of the support film may be, for example, 10-200 ⁇ m or 20-170 ⁇ m.
  • Mixing or kneading can be carried out by using a dispersing machine such as a normal stirrer, squeegee machine, triple roll, ball mill, etc., and combining them appropriately.
  • a dispersing machine such as a normal stirrer, squeegee machine, triple roll, ball mill, etc., and combining them appropriately.
  • the solvent used for preparing the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used.
  • solvents include ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene and xylene.
  • the solvent may be methyl ethyl ketone or cyclohexanone from a drying speed and cost point of view.
  • a known method can be used, for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, or the like is used. be able to.
  • Heat drying is not particularly limited as long as the solvent used is sufficiently volatilized, but it can be carried out in the range of 50 to 150° C. for 1 to 30 minutes. Heat drying can be performed in stages at different heating temperatures and for different heating times.
  • the thickness of the film adhesive may be 20 ⁇ m or less, 18 ⁇ m or less, 15 ⁇ m or less, 12 ⁇ m or less, 10 ⁇ m or less, or 8 ⁇ m or less.
  • the lower limit of the thickness of the film adhesive is not particularly limited, it may be, for example, 1 ⁇ m or more.
  • the film-like adhesive produced on the support film may have a cover film on the side opposite to the support film of the film-like adhesive.
  • cover films include polyethylene films, polypropylene films, films treated with surface release agents, and the like.
  • the thickness of the cover film may be, for example, 15-200 ⁇ m or 30-170 ⁇ m.
  • a film-like adhesive can be made thinner, so it can be suitably used in the manufacturing process of a semiconductor device in which multiple semiconductor elements are laminated.
  • the semiconductor device may be a stacked MCP or a three-dimensional NAND memory.
  • the film-like adhesive 1 is a splitting property evaluation method using the results of a cleaving test performed under the following conditions (a film under low-temperature conditions (for example, a range of -15 ° C. to 0 ° C.) where cooling expansion is performed) method for evaluating splittability of adhesives), the adhesive may be a film adhesive having a breaking modulus m of 70 or less.
  • a breaking modulus m of 70 or less Width of sample: 5 mm Sample length: 23mm Relative speed between pushing jig and sample: 10 mm/min
  • the breaking test will be explained below.
  • the rupture test is classified as a bending strength test, and includes a step of pushing the central portion of the sample until the sample breaks while both ends of the sample are fixed.
  • the sample S is sandwiched and fixed between a pair of sample fixing jigs 20 and subjected to the breaking test.
  • the pair of sample fixing jigs 20 are made of, for example, cardboard having sufficient strength, and each have a rectangular opening 20a in the center.
  • a load is applied to the central portion of the fixed sample S using a pressing jig 21 (see FIG. 3).
  • the sample S may be obtained by cutting out the film-like adhesive to be evaluated, and the sample does not have to be prepared by laminating a plurality of adhesive pieces cut out from the film-like adhesive. That is, the thickness of the sample S may be the same as the thickness of the film adhesive.
  • the width of the sample S (Ws in FIG. 2) is, for example, 1 to 30 mm, and may be 3 to 8 mm. An appropriate width may be set according to the conditions of the measuring device.
  • the length of the sample S (Ls in FIG. 2) is, for example, 5-50 mm, and may be 10-30 mm or 6-9 mm. The length of the sample S depends on the size of the opening 20a of the jig 20 for fixing the sample. Note that the shape of the sample fixing jig 20 and the size of the sample S may be other than those described above as long as the fracture test can be performed.
  • the pressing jig 21 consists of a cylindrical member having a conical tip 21a.
  • the diameter (R in FIG. 3) of the pressing jig 21 is, for example, 3 to 15 mm, and may be 5 to 10 mm.
  • the angle of the tip portion 21a ( ⁇ in FIG. 3) is, for example, 40 to 120°, and may be 60 to 100°.
  • the breaking test is carried out in a constant temperature bath set at a predetermined temperature.
  • the constant temperature bath may be set at a constant temperature in the range of ⁇ 15° C. to 0° C. (expected cooling expansion temperature).
  • As the constant temperature bath for example, TLF-R3-FW-PL-S manufactured by ITEC Co., Ltd. can be used.
  • an autograph for example, AZT-CA01, load cell 50N, compression mode manufactured by A&D Co., Ltd.
  • the work at break W, the strength at break P, and the elongation at break L are obtained.
  • the relative speed between the pressing jig 21 and the sample S is, for example, 1 to 100 mm/min, and may be 5 to 20 mm/min. If this relative speed is too high, there is a tendency that sufficient data on the cleaving process cannot be obtained, and if it is too slow, the stress tends to relax, making it difficult to achieve cleaving.
  • the pushing distance of the pushing jig 21 is, for example, 1 to 50 mm, and may be 5 to 30 mm. If the pushing distance is too short, there is a tendency not to result in breakage. It is preferable to prepare a plurality of samples of the film-like adhesive to be evaluated, and to perform a cleaving test a plurality of times to confirm the stability of the test results.
  • FIG. 4 is a graph showing an example of the results of the breaking test.
  • the breaking work W is the area enclosed when a graph is created with the vertical axis representing the load and the horizontal axis representing the pressing amount until the sample S breaks.
  • the breaking strength P is the load when the sample S breaks.
  • the breaking elongation L is the elongation amount of the sample S when the sample S breaks.
  • the breaking elongation L may be calculated using a trigonometric function from the pushing distance when the sample S breaks and the width of the opening 20a of the jig 20 for fixing the sample.
  • the breaking modulus m may be 90 or less, 80 or less, 70 or less, 65 or less, or 60 or less.
  • the breaking modulus m is a parameter relating to stretchability of a film adhesive under low temperature conditions. When the breaking modulus m is 90 or less, the suitable stretchability of the film-like adhesive tends to result in sufficient breakability by cooling expansion. This tendency is more remarkable as the numerical value of the breaking modulus m becomes smaller.
  • the fracture modulus m (dimensionless) may be greater than 0 and may be 10 or more or 15 or more. When the breaking modulus m is 15 or more, the stress propagating property tends to be good.
  • a film adhesive having a breaking modulus m within such a range can be suitably used in a semiconductor device manufacturing process in which cooling expansion is performed.
  • the breaking resistance R may be more than 0 N/mm 2 and 45 N/mm 2 or less, may be 10 N/mm 2 or more or 20 N/mm 2 or more , and may be 40 N/mm 2 or less or 35 N/mm 2 or less.
  • the breaking resistance R is 45 N/mm 2 or less, the strength of the film-like adhesive does not become excessive and there is a tendency to obtain sufficient splittability.
  • the breaking resistance R is more than 0 N/mm 2 , good stress propagation occurs during cooling expansion, and there is a tendency to obtain better splitting properties. This tendency tends to become more pronounced when the breaking resistance R is 20 N/mm 2 or more.
  • FIG. 5 is a schematic cross-sectional view showing an embodiment of a dicing/die bonding integrated film.
  • a dicing/die-bonding integrated film 10 shown in FIG. 5 includes a substrate layer 2, an adhesive layer 3, and an adhesive layer 1A made of the adhesive composition in this order.
  • the adhesive layer 1A may be the film adhesive 1.
  • the base material layer 2 and the adhesive layer 3 may be a dicing tape 4 .
  • the dicing/die-bonding integrated film may be in the form of a film, a sheet, a tape, or the like.
  • the dicing tape 4 includes a base layer 2 and an adhesive layer 3 provided on the base layer 2 .
  • the base material layer 2 examples include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. These substrate layers 2 may be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc., as required.
  • the adhesive layer 3 is a layer made of an adhesive.
  • the adhesive is not particularly limited as long as it has sufficient adhesive strength to prevent the semiconductor elements from scattering during dicing and has low adhesive strength to the extent that the semiconductor elements are not damaged in the subsequent step of picking up the semiconductor elements. can be used.
  • the adhesive may be either non-radiation curable or radiation curable.
  • a non-radiation curable adhesive is an adhesive that exhibits a certain level of adhesiveness when pressed for a short period of time, and is an adhesive that does not lose its adhesiveness when exposed to radiation (for example, ultraviolet rays).
  • a radiation-curable pressure-sensitive adhesive is a pressure-sensitive adhesive that has the property of decreasing its adhesiveness when irradiated with radiation (for example, ultraviolet rays).
  • the radiation-curable adhesive may be, for example, an ultraviolet-curable adhesive.
  • the thickness of the dicing tape 4 may be 60 to 150 ⁇ m or 70 to 130 ⁇ m from the viewpoint of economy and film handling.
  • the dicing/die bonding integrated film 10 can be obtained, for example, by preparing a film adhesive 1 and a dicing tape 4 and bonding the film adhesive 1 and the adhesive layer 3 of the dicing tape 4 together. Further, the dicing/die-bonding integrated film 10 can be obtained, for example, by preparing the dicing tape 4 and applying an adhesive composition (adhesive varnish) to the dicing tape 4 in the same manner as in the method of forming the film adhesive 1 described above. It can also be obtained by coating on the pressure-sensitive adhesive layer 3 .
  • the dicing/die bonding integrated film 10 is applied under predetermined conditions (for example, room temperature (20° C.) or It can be formed by laminating the film adhesive 1 on the dicing tape 4 in a heated state).
  • predetermined conditions for example, room temperature (20° C.) or It can be formed by laminating the film adhesive 1 on the dicing tape 4 in a heated state.
  • the dicing/die-bonding integrated film 10 can be continuously produced and is highly efficient, so it may be formed using a roll laminator in a heated state.
  • the film-like adhesive and the dicing/die-bonding integrated film may be used in the manufacturing process of a semiconductor device, or may be used in the manufacturing process of a semiconductor device formed by laminating a plurality of semiconductor elements. good.
  • a film-like adhesive is also suitably used as an adhesive for adhering a semiconductor element and a supporting member on which the semiconductor element is mounted.
  • the film-like adhesive is also suitably used as an adhesive for bonding semiconductor elements in a laminated MCP (for example, a three-dimensional NAND memory), which is a semiconductor device formed by laminating a plurality of semiconductor elements. .
  • a laminated MCP for example, a three-dimensional NAND memory
  • the film adhesive is, for example, a protective sheet for protecting the back surface of the semiconductor element of the flip chip type semiconductor device, or a sealing sheet for sealing between the surface of the semiconductor element of the flip chip type semiconductor device and the adherend. etc. can also be used.
  • a semiconductor device manufactured using a film-like adhesive and a dicing/die-bonding integrated film will be specifically described below with reference to the drawings.
  • semiconductor devices with various structures have been proposed, and the application of the film-like adhesive and dicing/die bonding integrated film of the present embodiment is not limited to the semiconductor devices having the structures described below. do not have.
  • FIG. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
  • a semiconductor device 100 shown in FIG. 6 includes a semiconductor element 11 , a support member 12 on which the semiconductor element 11 is mounted, and an adhesive member 15 .
  • the adhesive member 15 is provided between the semiconductor element 11 and the support member 12 and bonds the semiconductor element 11 and the support member 12 together.
  • the adhesive member 15 is a cured product of an adhesive composition (cured film adhesive). Connection terminals (not shown) of the semiconductor element 11 are electrically connected to external connection terminals (not shown) via wires 13 and sealed with a sealing material 14 .
  • FIG. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the first semiconductor element 11a is a support member 12 having terminals 16 formed by an adhesive member 15a (cured product of adhesive composition (cured product of film adhesive)).
  • the semiconductor element 11b in the second stage is further bonded onto the semiconductor element 11a in the first stage with an adhesive member 15b (cured product of adhesive composition (cured product of film-like adhesive)).
  • Connection terminals (not shown) of the first-stage semiconductor element 11 a and the second-stage semiconductor element 11 b are electrically connected to external connection terminals via wires 13 and sealed with a sealing material 14 .
  • the semiconductor device 110 shown in FIG. 7 further includes another semiconductor element (11b) laminated on the surface of the semiconductor element (11a) in the semiconductor device 100 shown in FIG.
  • FIG. 8 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • a semiconductor device 120 shown in FIG. 8 includes a support member 12 and semiconductor elements 11 a, 11 b, 11 c, and 11 d stacked on the support member 12 .
  • the four semiconductor elements 11a, 11b, 11c, and 11d are offset from each other in the lateral direction (direction perpendicular to the stacking direction) for connection with connection terminals (not shown) formed on the surface of the support member 12. position (see FIG. 8).
  • the semiconductor element 11a is adhered to the support member 12 by an adhesive member 15a (cured product of adhesive composition (cured product of film adhesive)).
  • Adhesive members 15b, 15c, and 15d are interposed, respectively. It can be said that the semiconductor device 120 shown in FIG. 8 further includes other semiconductor elements (11b, 11c, 11d) laminated on the surface of the semiconductor element (11a) in the semiconductor device 100 shown in FIG. .
  • FIG. 8 illustrates a semiconductor device in which four semiconductor elements are stacked, but the number of stacked semiconductor elements is not limited to this.
  • FIG. 8 illustrates the semiconductor device in which the semiconductor elements are stacked at positions shifted in the lateral direction (direction orthogonal to the stacking direction), the semiconductor elements direction) may be stacked at positions that are not shifted from each other.
  • the semiconductor device (semiconductor package) shown in FIGS. 6, 7, and 8 is provided between the semiconductor element and the supporting member, or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element). By interposing the film adhesive between and bonding the semiconductor element and the supporting member, or the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element). be able to.
  • a method for interposing a film-like adhesive between the semiconductor element and the support member or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), as described later A method may be employed in which a semiconductor element with an adhesive piece is prepared in advance and then attached to a supporting member or a semiconductor element.
  • the method of manufacturing a semiconductor device using the dicing/die-bonding integrated film is not limited to the method of manufacturing a semiconductor device described below.
  • a semiconductor device includes, for example, a step of attaching a semiconductor wafer to the adhesive layer of the dicing/die bonding integrated film (laminating step), and a step of dicing the semiconductor wafer to which the adhesive layer is attached (dicing step). , a step of producing a plurality of individualized semiconductor elements with adhesive pieces by expanding the base material layer under cooling conditions (cooling expansion step), and a step of picking up the semiconductor elements with adhesive pieces from the adhesive layer ( picking up step) and a step of adhering the picked up semiconductor element with an adhesive piece to a support member via the adhesive piece (first adhesion step).
  • the method of manufacturing a semiconductor device may further include a step of bonding another semiconductor element with adhesive piece to the surface of the semiconductor element bonded to the support member via the adhesive piece (second bonding step). .
  • the lamination step is a step of pressing a semiconductor wafer onto the adhesive layer 1A of the dicing/die bonding integrated film 10, holding it by adhesion, and attaching it. This step may be performed while pressing with a pressing means such as a pressing roll.
  • a pressing means such as a pressing roll.
  • the semiconductor wafer the same semiconductor wafer as described above can be exemplified.
  • semiconductor wafers include monocrystalline silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.
  • a dicing process is a process of dicing a semiconductor wafer. Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method.
  • a method called half-cut in which a semiconductor wafer is cut in half a method in which a modified region is formed and divided by laser (stealth dicing), or the like can be employed.
  • Stealth dicing is preferably adopted for the adhesive layer of the dicing/die-bonding integrated film as described above because it is excellent in splitting property by cooling expansion.
  • the dicing device used in this step is not particularly limited, and conventionally known devices can be used.
  • the cooling expansion step is a step of expanding the base material layer under cooling conditions. As a result, a plurality of individualized semiconductor devices with adhesive pieces can be obtained.
  • the expansion conditions under the cooling conditions can be arbitrarily set, but for example, the cooling temperature is ⁇ 30 to 5° C., the cooling time is 30 seconds to 5 minutes, the thrust amount is 5 to 20 mm, and the thrust speed is 50 to 300 mm/second. can do.
  • Examples of semiconductor elements include ICs (integrated circuits).
  • Examples of supporting members include lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; glass non-woven fabrics and other substrates impregnated with plastics such as polyimide resin and epoxy resin and cured. modified plastic film; ceramics such as alumina;
  • the pick-up step is a step of picking up semiconductor elements with adhesive pieces while separating the semiconductor elements with adhesive pieces from each other in order to separate the semiconductor elements with adhesive pieces adhesively fixed to the dicing/die bonding integrated film.
  • the method of expanding for separating the semiconductor elements with adhesive strips is not particularly limited, and various conventionally known methods can be employed. As a method for separating the semiconductor elements with adhesive strips, for example, a method of expanding the base material layer can be mentioned. The expansion may optionally be expansion under chilled conditions.
  • the pickup method is not particularly limited, and conventionally known various methods can be employed. Examples of such a method include a method of pushing up individual semiconductor elements with adhesive pieces from the dicing/die bonding integrated film side with a needle and picking up the pushed-up semiconductor elements with adhesive pieces with a pickup device.
  • the pick-up step can be performed after irradiating the adhesive layer with radiation.
  • the adhesive strength of the pressure-sensitive adhesive layer to the adhesive piece is lowered, and the semiconductor element with the adhesive piece is easily peeled off.
  • the first bonding step is a step of bonding the picked-up semiconductor element with the adhesive piece to a supporting member for mounting the semiconductor element via the adhesive piece.
  • a step (second bonding step) of bonding another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via the adhesive piece may be provided. Any bonding can be performed by crimping.
  • the crimping conditions are not particularly limited, and can be appropriately set according to need.
  • the crimping conditions may be, for example, a temperature condition of 80 to 160° C., a load condition of 5 to 15 N, and a time condition of 1 to 10 seconds.
  • the support member can illustrate the same support member as the above.
  • the method of manufacturing a semiconductor device may include a step of thermally curing the adhesive piece, if necessary.
  • the adhesive pieces bonding the semiconductor element and the support member, or the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element) are thermally cured, thereby making them more firmly.
  • Adhesive fixation is possible.
  • pressure may be applied at the same time for curing.
  • the heating temperature in this step can be appropriately changed depending on the composition of the adhesive piece.
  • the heating temperature may be, for example, 60-200.degree. Note that the temperature or pressure may be changed stepwise.
  • a method of manufacturing a semiconductor device includes, if necessary, a step (wire bonding step) of electrically connecting tips of terminal portions (inner leads) of a support member and electrode pads on a semiconductor element with bonding wires. good too.
  • the bonding wire for example, gold wire, aluminum wire, copper wire, or the like is used.
  • the temperature for wire bonding (providing bonding wires) may be in the range of 80 to 250°C or 80 to 220°C.
  • the heating time can be from a few seconds to several minutes.
  • the bonding wire may be performed in a heated state within the above-mentioned temperature range by using both vibrational energy of ultrasonic waves and crimping energy of applied pressure.
  • the method of manufacturing a semiconductor device may optionally include a step of sealing the semiconductor element with a sealing material (sealing step). This step is performed to protect the semiconductor element or bonding wires mounted on the support member. This step can be performed by molding resin for sealing (sealing resin) with a mold.
  • a sealing resin for example, an epoxy resin may be used.
  • the support member and residue are embedded by heat and pressure during sealing, and peeling due to air bubbles at the adhesion interface can be prevented.
  • the method of manufacturing a semiconductor device may include, if necessary, a process (post-curing process) for completely curing the sealing resin that is insufficiently cured in the sealing process. Even if the adhesive piece is not heat-cured in the sealing process, the adhesive piece can be heat-cured together with the curing of the sealing resin in the present process to enable adhesive fixation.
  • the heating temperature in this step can be appropriately set according to the type of sealing resin, and may be, for example, within the range of 165 to 185° C., and the heating time may be approximately 0.5 to 8 hours.
  • the method of manufacturing a semiconductor device may include, if necessary, a step of heating the semiconductor element with the adhesive piece adhered to the support member using a reflow furnace (heating and melting step).
  • a resin-sealed semiconductor device may be surface-mounted on the supporting member.
  • surface mounting methods include reflow soldering in which solder is preliminarily supplied onto a printed wiring board and then heated and melted by hot air or the like for soldering.
  • Examples of the heating method include hot air reflow and infrared reflow.
  • the heating method may be a method of heating the whole or a method of locally heating. The heating temperature may be within the range of 240-280° C., for example.
  • A Component: Epoxy resin (A-1) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 203 g/eq) (A-2) PG-100 (trade name, manufactured by Osaka Gas Chemicals Co., Ltd., epoxy resin having a fluorene skeleton, epoxy equivalent: 260 g/eq)
  • C Component: Elastomer (C-1) HTR-860P (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: -12°C) (C-2) HTR-860P-30B: manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 300,000, Tg: -12°C)
  • Component (E) Coupling agent (E-1) A-189 (trade name, ⁇ -mercaptopropyltrimethoxysilane manufactured by Nippon Unicar Co., Ltd.) (E-2) Y-9669 (trade name, manufactured by Momentive Performance Materials Japan, 3-phenylaminopropyltrimethoxysilane)
  • Curing accelerator (F-1) 2PZ-CN (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)
  • ⁇ Preparation of film adhesive> The prepared adhesive varnish was filtered through a 500 mesh filter and vacuum degassed.
  • a release-treated polyethylene terephthalate (PET) film having a thickness of 38 ⁇ m was prepared as a support film, and an adhesive varnish after vacuum defoaming was applied onto the PET film.
  • the applied adhesive varnish is dried by heating in two stages: 90° C. for 5 minutes, followed by 140° C. for 5 minutes. Films of Examples 1 to 19 and Comparative Examples 1 to 3 in B stage. An adhesive (thickness: 7 ⁇ m) was obtained. In the film adhesive, the thickness of the film adhesive was adjusted to 7 ⁇ m by adjusting the coating amount of the adhesive varnish.
  • Adhesive pieces (width 5 mm ⁇ length 100 mm) were cut out from the film adhesives of Examples 1 to 19 and Comparative Examples 1 to 3, respectively. The adhesive pieces were fixed to a pair of jigs (cardboard), and portions of the adhesive pieces protruding from the jigs were removed. As a result, a sample (width 5 mm ⁇ length 23 mm) to be evaluated was obtained. A cleaving test was performed in a constant temperature bath (TLF-R3-FW-PL-S manufactured by ITEC Co., Ltd.) set at -15°C.
  • TEZ-R3-FW-PL-S manufactured by ITEC Co., Ltd.
  • breaking test was performed under the conditions of compression mode, speed of 10 mm/min, and pushing distance of 5 mm. Breaking work W, breaking strength P, and breaking elongation L were obtained. Further, the breaking modulus m and the breaking resistance R were calculated from the above formulas (1) and (2). Note that the breaking coefficient m and breaking resistance R are the average values obtained by carrying out breaking tests eight times or more for each example and each comparative example. As the value of the breaking modulus m becomes smaller, the splitting property by cooling expansion tends to be excellent.
  • the cutting was performed by a step cut method using two blades, and dicing blades ZH05-SD2000-N1-70-FF and ZH05-SD4000-N1-70-EE (both manufactured by DISCO Corporation) were used.
  • the cutting conditions were blade rotation speed: 4000 rpm, cutting speed: 50 mm/sec, and chip size: 3 mm ⁇ 3 mm.
  • the first stage of cutting was performed so that the semiconductor wafer remained about 200 ⁇ m, and the second stage of cutting was performed so that the dicing tape was cut to about 20 ⁇ m.
  • the adhesive layer made of the ultraviolet curable adhesive was irradiated with ultraviolet rays to cure the adhesive layer, and the semiconductor element with the adhesive piece was picked up.
  • the adhesive piece of the semiconductor element with the adhesive piece was pressure-bonded to an AUS410 substrate (organic substrate with solder resist) under conditions of a temperature of 120° C., a pressure of 0.1 MPa, and a time of 1.0 second to prepare a sample for evaluation. .
  • the die shear strength between the AUS410 substrate and the adhesive piece was measured at room temperature (25° C.).
  • a case where the die shear strength is 6 MPa or more is evaluated as being particularly excellent in thin film properties, "B" when the die shear strength is 4 MPa or more and less than 6 MPa, and "C” when the die shear strength is less than 4 MPa.
  • Tables 1, 2 and 3 also show values of die shear strength.
  • reflow resistance was produced by the following method. First, using a semiconductor element with an adhesive piece, a laminate laminated in four stages as shown in FIG. A package for evaluation was obtained by doing. The sealing conditions of the sealing material were 175° C./6.7 MPa/90 seconds, and the curing conditions were 175° C. and 5 hours. Twenty evaluation packages were prepared and exposed to the environment defined by JEDEC (level 3, 30° C., 60 RH %, 192 hours) to absorb moisture. Subsequently, the package for evaluation after moisture absorption was passed three times through an IR reflow oven (260° C., maximum temperature 265° C.).
  • the film adhesives of Examples 1 to 19 were excellent in terms of cooling splitting properties and thin film properties.
  • the film adhesives of Comparative Examples 1 to 3 were insufficient in at least one of thin film properties and cooling splitting properties. From these, it was confirmed that the film-like adhesive of the present disclosure has excellent splittability by cooling expansion and has sufficient die shear strength when thinned.

Abstract

La présente invention concerne un film adhésif. Le film adhésif contient une résine thermodurcissable, un agent de durcissement, un élastomère et une charge inorganique ayant un diamètre moyen de particules de l'ordre de 400 nm ou moins. La teneur en charge inorganique est de 18 à 40 % en masse rapportée à la quantité totale du film adhésif. La teneur totale en résine thermodurcissable et en agent de durcissement est inférieure ou égale à 25 % en masse rapportée à la quantité totale du film adhésif.
PCT/JP2022/035193 2021-09-27 2022-09-21 Film adhésif, film deux-en-un pour la découpe et le fixage de puces, dispositif à semi-conducteur et son procédé de fabrication WO2023048188A1 (fr)

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Citations (4)

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JP2010074144A (ja) * 2008-08-20 2010-04-02 Hitachi Chem Co Ltd ダイシングテープ一体型接着シート及びそれを用いた半導体装置の製造方法
JP2018016673A (ja) * 2016-07-25 2018-02-01 日立化成株式会社 接着シート、及び半導体装置の製造方法。
WO2020013250A1 (fr) * 2018-07-11 2020-01-16 日立化成株式会社 Procédé de fabrication de dispositif à semi-conducteur, composition de résine thermodurcissable, et film de fixation de matrice de découpage en dés
WO2021095302A1 (fr) * 2019-11-15 2021-05-20 昭和電工マテリアルズ株式会社 Procédé de production de dispositif semiconducteur, film intégré de fixation de puce/découpage en dés et son procédé de production

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Publication number Priority date Publication date Assignee Title
WO2020183581A1 (fr) * 2019-03-11 2020-09-17 日立化成株式会社 Composition d'agent adhésif, agent adhésif de type film, feuille adhésive et procédé de fabrication de dispositif à semi-conducteur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010074144A (ja) * 2008-08-20 2010-04-02 Hitachi Chem Co Ltd ダイシングテープ一体型接着シート及びそれを用いた半導体装置の製造方法
JP2018016673A (ja) * 2016-07-25 2018-02-01 日立化成株式会社 接着シート、及び半導体装置の製造方法。
WO2020013250A1 (fr) * 2018-07-11 2020-01-16 日立化成株式会社 Procédé de fabrication de dispositif à semi-conducteur, composition de résine thermodurcissable, et film de fixation de matrice de découpage en dés
WO2021095302A1 (fr) * 2019-11-15 2021-05-20 昭和電工マテリアルズ株式会社 Procédé de production de dispositif semiconducteur, film intégré de fixation de puce/découpage en dés et son procédé de production

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