WO2020183581A1 - Composition d'agent adhésif, agent adhésif de type film, feuille adhésive et procédé de fabrication de dispositif à semi-conducteur - Google Patents

Composition d'agent adhésif, agent adhésif de type film, feuille adhésive et procédé de fabrication de dispositif à semi-conducteur Download PDF

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Publication number
WO2020183581A1
WO2020183581A1 PCT/JP2019/009762 JP2019009762W WO2020183581A1 WO 2020183581 A1 WO2020183581 A1 WO 2020183581A1 JP 2019009762 W JP2019009762 W JP 2019009762W WO 2020183581 A1 WO2020183581 A1 WO 2020183581A1
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Prior art keywords
adhesive
film
component
resin
adhesive composition
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PCT/JP2019/009762
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English (en)
Japanese (ja)
Inventor
慎太郎 橋本
達也 矢羽田
紘平 谷口
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日立化成株式会社
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Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to PCT/JP2019/009762 priority Critical patent/WO2020183581A1/fr
Priority to PCT/JP2020/009887 priority patent/WO2020184490A1/fr
Priority to SG11202109506YA priority patent/SG11202109506YA/en
Priority to CN202080019222.1A priority patent/CN113544229A/zh
Priority to JP2021505054A priority patent/JPWO2020184490A1/ja
Priority to KR1020217028964A priority patent/KR20210137041A/ko
Priority to TW109107632A priority patent/TW202045676A/zh
Publication of WO2020183581A1 publication Critical patent/WO2020183581A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a method for manufacturing an adhesive composition, a film-like adhesive, an adhesive sheet, and a semiconductor device.
  • silver paste is mainly used for joining a semiconductor chip and a support member for mounting the semiconductor chip.
  • the support members used are also required to be miniaturized and densified.
  • problems such as protrusion of the paste or inclination of the semiconductor chip during wire bonding, difficulty in controlling the film thickness, and void generation may occur.
  • a film-like adhesive for joining a semiconductor chip and a support member has been used (see, for example, Patent Document 1).
  • an adhesive sheet including a dicing tape and a film-like adhesive laminated on the dicing tape is used, the film-like adhesive is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is separated by dicing to form a film.
  • a semiconductor chip with an adhesive can be obtained.
  • the obtained semiconductor chip with a film-like adhesive can be attached to a support member via a film-like adhesive and bonded by thermocompression bonding.
  • the film-like adhesive is used as FOW (Film Over Will), which is a wire-embedded film-like adhesive, or FOD (Film Over Die), which is a semiconductor chip-embedded film-like adhesive
  • FOW Fem Over Will
  • FOD Find Over Die
  • the film-like adhesive is used as FOW (Film Over Will), which is a wire-embedded film-like adhesive, or FOD (Film Over Die), which is a semiconductor chip-embedded film-like adhesive
  • high fluidity is required during thermocompression bonding. Therefore, the frequency and amount of bleeding tend to increase further. In some cases, bleeding may occur even on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide an adhesive composition capable of suppressing bleeding while having good embedding property at the time of thermocompression bonding. To do.
  • One aspect of the present invention provides an adhesive composition containing a thermosetting resin, a curing agent, and an elastomer, and the curing agent contains a phenol resin having an alicyclic ring. According to such an adhesive composition, it is possible to suppress bleeding while having good embedding property at the time of thermocompression bonding.
  • the thermosetting resin may contain an epoxy resin.
  • the epoxy resin may be an epoxy resin having an alicyclic ring.
  • the elastomer may contain an acrylic resin.
  • the adhesive composition may further contain an inorganic filler.
  • the adhesive composition may further contain a curing accelerator.
  • the adhesive composition is used in a semiconductor device in which a first semiconductor element is wire-bonded on a substrate via a first wire, and a second semiconductor element is crimped onto the first semiconductor element. , It may be used for crimping the second semiconductor element and embedding at least a part of the first wire.
  • the present invention further comprises a first semiconductor via a first wire on a substrate of a composition containing a thermosetting resin, a curing agent and an elastomer, and the curing agent containing a phenol resin having an alicyclic ring.
  • the second semiconductor element is crimped onto the first semiconductor element, the second semiconductor element is crimped and at least a part of the first wire is embedded. It may also relate to an application as an adhesive or an application for the production of an adhesive used for the purpose.
  • the present invention provides a film-like adhesive obtained by forming the above-mentioned adhesive composition into a film.
  • the present invention provides an adhesive sheet comprising a substrate and the film-like adhesive provided on the substrate.
  • the base material may be a dicing tape.
  • an adhesive sheet whose base material is a dicing tape may be referred to as a “dicing die bonding integrated adhesive sheet”.
  • the adhesive sheet may further include a protective film laminated on the surface opposite to the base material of the film-like adhesive.
  • the present invention has a wire bonding step of electrically connecting the first semiconductor element on the substrate via the first wire, and the above-mentioned film-like film on one side of the second semiconductor element.
  • a wire bonding step of electrically connecting the first semiconductor element on the substrate via the first wire, and the above-mentioned film-like film on one side of the second semiconductor element.
  • the first semiconductor chip is wire-bonded and connected to the semiconductor substrate via the first wire, and the second semiconductor chip is crimped onto the first semiconductor chip via an adhesive film.
  • a wire-embedded semiconductor device in which at least a part of the first wire is embedded in the adhesive film may be used, and the first wire and the first semiconductor chip are embedded in the adhesive film. It may be a chip-embedded semiconductor device.
  • the film-like adhesive formed by forming the adhesive composition into a film is FOD (Film Over Die), which is a semiconductor chip-embedded film-like adhesive, or FOW (Film), which is a wire-embedded film-like adhesive. It can be useful as OverWire). Further, according to the present invention, there is provided a method for manufacturing an adhesive sheet and a semiconductor device using such a film-like adhesive.
  • (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto.
  • the adhesive composition according to this embodiment contains (A) a thermosetting resin, (B) a curing agent, and (C) an elastomer.
  • the adhesive composition is thermosetting and can be in a semi-cured (B stage) state and then in a fully cured (C stage) state after the curing treatment.
  • Thermosetting resin may contain an epoxy resin from the viewpoint of adhesiveness.
  • the epoxy resin can be used without particular limitation as long as it is a compound having an epoxy group in the molecule.
  • examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, and bisphenol F novolac type epoxy resin.
  • Stilben type epoxy resin triazine skeleton containing epoxy resin, fluorene skeleton containing epoxy resin, triphenolphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, alicyclic type
  • examples thereof include an epoxy resin having a ring. These may be used individually by 1 type or in combination of 2 or more type.
  • the epoxy resin may be an epoxy resin having an alicyclic ring or a dicyclopentadiene type epoxy resin (an epoxy resin having a dicyclopentadiene structure) from the viewpoint of fluidity.
  • the epoxy equivalent of the component (A) is not particularly limited, but may be 90 to 600 g / eq, 100 to 500 g / eq, or 120 to 450 g / eq. When the epoxy equivalent of the component (A) is in such a range, good reactivity and fluidity tend to be obtained.
  • the component (B) contains a phenolic resin (B-1) having an alicyclic ring.
  • the component (B-1) is a compound having an alicyclic ring and a hydroxyl group in the molecule.
  • the hydroxyl group may be bonded to a site other than the alicyclic ring or the alicyclic ring of the compound via a single bond or a linking group (for example, an alkylene group, an oxyalkylene group, etc.).
  • a linking group for example, an alkylene group, an oxyalkylene group, etc.
  • the component (B-1) may be, for example, a phenol resin represented by the following general formula (1).
  • E represents an alicyclic ring
  • G represents a single bond or an alkylene group
  • R 1 independently represents a hydrogen atom or a monovalent hydrocarbon group.
  • n1 indicates an integer of 1 to 10
  • m indicates an integer of 1 to 3.
  • the number of carbon atoms of E may be 4 to 12, 5 to 11, or 6 to 10.
  • E may be a monocyclic ring or a polycyclic ring, but it is preferably a polycyclic ring, and more preferably a dicyclopentadiene ring.
  • the alkylene group in G may be an alkylene group having 1 to 5 carbon atoms such as a methylene group, an ethylene group, a propylene group, a butylene group and a pentylene group. G is preferably a single bond.
  • Monovalent hydrocarbon group for R 1 is, for example, a methyl group, an ethyl group, a propyl group, a butyl group, an alkyl group such as a pentyl group, an aryl group such as phenyl group and naphthyl group, a heteroaryl group such as pyridyl group It may be there.
  • R 1 is preferably a hydrogen atom.
  • the phenolic resin represented by the general formula (1) may be a phenolic resin represented by the following general formula (1a).
  • n1 has the same meaning as above.
  • Examples of commercially available epoxy resins represented by the general formula (1a) include J-DPP-85, J-DPP-95, and J-DPP-115 (all manufactured by JFE Chemical Co., Ltd.).
  • the hydroxyl group equivalent of the component (B-1) is not particularly limited, but may be 80 to 400 g / eq, 90 to 350 g / eq, or 100 to 300 g / eq. When the hydroxyl group equivalent of the component (B-1) is in such a range, good reactivity and fluidity tend to be obtained.
  • the content of the component (B-1) may be 5% by mass or more, 10% by mass or more, or 15% by mass or more based on the total amount of the adhesive composition.
  • the content of the component (B-1) may be 50% by mass or less, 40% by mass or less, or 30% by mass or less based on the total amount of the adhesive composition.
  • the component (B) may further contain a phenol resin (B-2) having no alicyclic ring in addition to the component (B-1).
  • a phenol resin (B-2) having no alicyclic ring in addition to the component (B-1).
  • the component (B-2) include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and / or ⁇ -naphthol, ⁇ -naphthol, dihydroxynaphthalene and the like.
  • Novolak-type phenol resin allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol obtained by condensing or co-condensing naphthols and compounds having an aldehyde group such as formaldehyde under an acidic catalyst.
  • phenols and / or naphthols and phenol aralkyl resin synthesized from dimethoxyparaxylene or bis (methoxymethyl) biphenyl, naphthol aralkyl resin, biphenyl aralkyl type phenol resin, phenyl aralkyl type phenol resin and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
  • the hydroxyl group equivalent of the component (B-2) is not particularly limited, but may be 80 to 400 g / eq, 90 to 350 g / eq, or 100 to 300 g / eq.
  • the hydroxyl group equivalent of the component (B-1) is in such a range, good reactivity and fluidity tend to be obtained.
  • the content of the component (B-1) may be 50 to 100% by mass based on the total amount of the component (B).
  • the content of the component (B-1) may be 60% by mass or more or 70% by mass or more based on the total amount of the component (B).
  • the content of the component (B-2) may be 0 to 50% by mass based on the total amount of the component (B).
  • the content of the component (B-2) may be 40% by mass or less or 30% by mass or less based on the total amount of the component (B).
  • the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the component (B) is 0 from the viewpoint of curability.
  • 30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 It may be /0.55 to 0.55 / 0.45.
  • the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.
  • the total content of the component (A) and the component (B) may be 30 to 70% by mass based on the total amount of the adhesive composition.
  • the total content of the component (A) and the component (B) may be 33% by mass or more, 36% by mass or more, or 40% by mass or more, and 65% by mass or less, 60% by mass or less, or 55% by mass. It may be less than or equal to%.
  • the adhesiveness tends to be improved.
  • the total content of the component (A) and the component (B) is 70% by mass or less based on the total amount of the adhesive composition, it is possible to prevent the viscosity from becoming too low and further suppress bleeding. Tend to be able to.
  • the adhesive composition according to this embodiment contains (C) an elastomer.
  • the component (C) preferably has a glass transition temperature (Tg) of the polymer constituting the elastomer of 50 ° C. or lower.
  • component (C) examples include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin, acrylonitrile resin, and modified products thereof.
  • the component (C) may contain an acrylic resin from the viewpoint of solubility in a solvent and fluidity.
  • the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester.
  • the acrylic resin is preferably a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group as a structural unit.
  • the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
  • the glass transition temperature (Tg) of the acrylic resin may be -50 to 50 ° C or -30 to 30 ° C.
  • Tg of the acrylic resin is ⁇ 50 ° C. or higher, it tends to be possible to prevent the adhesive composition from becoming too flexible. This makes it easier to cut the film-like adhesive during wafer dicing, and it is possible to prevent the occurrence of burrs.
  • the Tg of the acrylic resin is 50 ° C. or lower, the decrease in flexibility of the adhesive composition tends to be suppressed. As a result, when the film-like adhesive is attached to the wafer, the voids tend to be sufficiently embedded. In addition, it is possible to prevent chipping during dicing due to a decrease in wafer adhesion.
  • the glass transition temperature (Tg) means a value measured using a TMA test apparatus (TMA400Q, manufactured by TA Instruments).
  • the weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3 million or 500,000 to 2 million.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.
  • acrylic resin products examples include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 solvent-modified products (all manufactured by Nagase ChemteX Corporation).
  • the content of the component (C) may be 20 to 200 parts by mass or 30 to 100 parts by mass with respect to 100 parts by mass of the total amount of the components (A) and (B).
  • the handleability of the film-like adhesive (for example, bendability) is better. It tends to be.
  • the content of the component (C) is 200 parts by mass or less with respect to 100 parts by mass of the total amount of the components (A) and (B), it is possible to further prevent the adhesive composition from becoming too flexible. Tend to be able to. This makes it easier to cut the film-like adhesive during wafer dicing, and tends to further prevent the occurrence of burrs.
  • the adhesive composition according to the present embodiment may further contain (D) an inorganic filler.
  • the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystals. Examples thereof include sex silica and amorphous silica. One of these may be used alone, or two or more thereof may be used in combination.
  • the inorganic filler may contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica or amorphous silica.
  • the inorganic fillers are aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, and the like. It may contain magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline silica or amorphous silica.
  • the average particle size of the component (D) may be 0.005 to 0.5 ⁇ m or 0.05 to 0.3 ⁇ m from the viewpoint of further improving the adhesiveness.
  • the average particle size means a value obtained by converting from the BET specific surface area.
  • the component (D) may be surface-treated with a surface treatment agent from the viewpoint of compatibility between the surface and the solvent, other components and the like, and adhesive strength.
  • a surface treatment agent include a silane coupling agent and the like.
  • the functional group of the silane coupling agent include a vinyl group, a (meth) acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, an ethoxy group and the like.
  • the content of the component (D) may be 10 to 90 parts by mass or 10 to 50 parts by mass with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C).
  • the content of the component (D) is 10 parts by mass or more with respect to 100 parts by mass of the total amount of the components (A), (B), and (C)
  • the dicing property of the adhesive layer before curing becomes high. It tends to improve and the adhesive strength of the adhesive layer after curing tends to improve.
  • the content of the component (D) is 90 parts by mass or less with respect to 100 parts by mass of the total amount of the components (A), (B), and (C)
  • the decrease in fluidity can be suppressed and curing is performed. It is possible to prevent the elastic modulus of the later film-like adhesive from becoming too high.
  • the adhesive composition according to this embodiment may contain (E) a curing accelerator.
  • the curing accelerator is not particularly limited, and generally used ones can be used.
  • Examples of the component (E) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (E) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the content of the component (E) is 0.04 to 3 parts by mass or 0.04 to 0.2 parts by mass with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C). It may be. When the content of the component (E) is in such a range, both curability and reliability tend to be compatible.
  • the adhesive composition according to the present embodiment may further contain an antioxidant, a silane coupling agent, a rheology control agent and the like as other components.
  • the content of these components may be 0.02 to 3 parts by mass with respect to 100 parts by mass of the total amount of the component (A), the component (B), and the component (C).
  • the adhesive composition according to this embodiment may be used as an adhesive varnish diluted with a solvent.
  • the solvent is not particularly limited as long as it can dissolve a component other than the component (D).
  • the solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like.
  • Cyclic ethers such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone; Carbonated esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone can be mentioned. These may be used individually by 1 type or in combination of 2 or more type. Of these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexane from the viewpoint of solubility and boiling point.
  • the concentration of solid components in the adhesive varnish may be 10 to 80% by mass based on the total mass of the adhesive varnish.
  • the adhesive varnish is prepared by mixing and kneading the components (A), (B), (C), and solvent, and, if necessary, the components (D), (E), and other components. Can be prepared by. Mixing and kneading can be carried out by appropriately combining a disperser such as a normal stirrer, a raft machine, a triple roll, a ball mill, and a bead mill. When the component (D) is contained, the mixing time can be shortened by mixing the component (D) and the low molecular weight component in advance and then blending the high molecular weight component. Further, after preparing the adhesive varnish, air bubbles in the varnish may be removed by vacuum degassing or the like.
  • a disperser such as a normal stirrer, a raft machine, a triple roll, a ball mill, and a bead mill.
  • FIG. 1 is a schematic cross-sectional view showing a film-like adhesive according to an embodiment.
  • the film-like adhesive 10 is formed by forming the above-mentioned adhesive composition into a film.
  • the film-like adhesive 10 may be in a semi-cured (B stage) state.
  • Such a film-like adhesive 10 can be formed by applying an adhesive composition to a support film.
  • an adhesive varnish is used, the film-like adhesive 10 can be formed by applying the adhesive varnish to the support film and removing the solvent by heating and drying.
  • the support film is not particularly limited, and examples thereof include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide.
  • the thickness of the support film may be, for example, 10 to 200 ⁇ m or 20 to 170 ⁇ m.
  • a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. Be done.
  • the conditions for heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, 0.1 to 90 minutes at 50 to 200 ° C.
  • the thickness of the film-like adhesive can be adjusted as appropriate according to the application.
  • the thickness of the film-like adhesive may be 20 to 200 ⁇ m, 30 to 200 ⁇ m, or 40 to 150 ⁇ m from the viewpoint of sufficiently embedding irregularities of semiconductor chips, wires, wiring circuits of substrates, and the like.
  • FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment.
  • the adhesive sheet 100 includes a base material 20 and the above-mentioned film-like adhesive 10 provided on the base material.
  • the base material 20 is not particularly limited, but may be a base material film.
  • the base film may be the same as the support film described above.
  • the base material 20 may be a dicing tape.
  • Such an adhesive sheet can be used as a dicing die bonding integrated adhesive sheet. In this case, since the laminating process on the semiconductor wafer is performed once, the work efficiency can be improved.
  • the dicing tape examples include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.
  • the dicing tape is preferably one having adhesiveness. Such a dicing tape may be one in which adhesiveness is imparted to the above-mentioned plastic film, or may be one in which an adhesive layer is provided on one side of the above-mentioned plastic film.
  • the adhesive sheet 100 can be formed by applying an adhesive composition to a base film in the same manner as the above-mentioned method for forming a film-like adhesive.
  • the method of applying the adhesive composition to the base material 20 may be the same as the method of applying the adhesive composition to the support film described above.
  • the adhesive sheet 100 may be formed by using a film-like adhesive prepared in advance.
  • the adhesive sheet 100 can be formed by laminating under predetermined conditions (for example, room temperature (20 ° C.) or a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be continuously manufactured and has high efficiency, it is preferable to form the adhesive sheet 100 in a heated state using a roll laminator.
  • the thickness of the film-like adhesive 10 may be 20 to 200 ⁇ m, 30 to 200 ⁇ m, or 40 to 150 ⁇ m from the viewpoint of embedding the unevenness of the semiconductor chip, the wire, the wiring circuit of the substrate, and the like.
  • the thickness of the film-like adhesive 10 is 20 ⁇ m or more, more sufficient adhesive force tends to be obtained, and when the thickness of the film-like adhesive 10 is 200 ⁇ m or less, it is economical and a semiconductor device. It will be possible to meet the demand for miniaturization.
  • FIG. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment.
  • the adhesive sheet 110 further includes a protective film 30 laminated on the surface of the film-like adhesive 10 opposite to the base material 20.
  • the protective film 30 may be the same as the support film described above.
  • the thickness of the protective film may be, for example, 15 to 200 ⁇ m or 70 to 170 ⁇ m.
  • FIG. 4 is a schematic cross-sectional view showing the semiconductor device according to the embodiment.
  • the first semiconductor element Wa of the first stage is wire-bonded to the substrate 14 via the first wire 88, and the second semiconductor element Wa is mounted on the first semiconductor element Wa.
  • the semiconductor device is a wire-embedded semiconductor device in which at least a part of the first wire 88 is embedded, but is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded. You may.
  • the substrate 14 and the second semiconductor element Waa are further electrically connected via the second wire 98, and the second semiconductor element Waa is sealed by the sealing material 42. ing.
  • the thickness of the first semiconductor element Wa may be 10 to 170 ⁇ m, and the thickness of the second semiconductor element Wa may be 20 to 400 ⁇ m.
  • the first semiconductor element Wa embedded inside the film-like adhesive 10 is a controller chip for driving the semiconductor device 200.
  • the substrate 14 is composed of an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface thereof.
  • the first semiconductor element Wa is crimped onto the circuit pattern 94 via an adhesive 41.
  • the second semiconductor element Waa is via a film-like adhesive 10 so that a part of the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 in which the first semiconductor element Wa is not crimped is covered. It is crimped to the substrate 14.
  • the film-like adhesive 10 is embedded in the uneven steps caused by the circuit patterns 84 and 94 on the substrate 14. Then, the second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed by the resin-made sealing material 42.
  • the method for manufacturing a semiconductor device includes a first wire bonding step of electrically connecting a first semiconductor element on a substrate via a first wire, and a method of manufacturing the semiconductor device on one side of the second semiconductor element.
  • the semiconductor device 200 is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded, and is manufactured by the following procedure.
  • the first semiconductor element Wa having the adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 and the first are on the substrate 14 via the first wire 88.
  • the semiconductor element Wa of 1 is electrically bonded and connected (first wire bonding step).
  • the adhesive sheet 100 is laminated on one side of the semiconductor wafer (for example, thickness 100 ⁇ m, size: 8 inches), and the base material 20 is peeled off, so that the film-like adhesive 10 (for example, thickness) is attached to one side of the semiconductor wafer. Wafer 110 ⁇ m) is pasted. Then, after the dicing tape is attached to the film-like adhesive 10, the dicing tape is diced to a predetermined size (for example, 7.5 mm square), so that the second film-like adhesive 10 is attached as shown in FIG. (Laminating step).
  • a predetermined size for example, 7.5 mm square
  • the temperature condition of the laminating process may be 50 to 100 ° C or 60 to 80 ° C.
  • the temperature of the laminating step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained.
  • the temperature of the laminating step is 100 ° C. or lower, the film-like adhesive 10 is suppressed from being excessively flowed during the laminating step, so that it is possible to prevent a change in thickness or the like.
  • Examples of the dicing method include blade dicing using a rotary blade, a method of cutting a film-like adhesive or both a wafer and a film-like adhesive with a laser, and the like.
  • the second semiconductor element Waa to which the film-like adhesive 10 is attached is crimped to the substrate 14 to which the first semiconductor element Wa is bonded and connected via the first wire 88.
  • the second semiconductor element Waa to which the film-like adhesive 10 is attached is covered with the film-like adhesive 10 so that the first wire 88 and the first semiconductor element Wa are covered.
  • the second semiconductor element Waa is fixed to the substrate 14 by crimping the second semiconductor element Waa to the substrate 14 (die bonding step).
  • the film-like adhesive 10 is pressure-bonded at 80 to 180 ° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds.
  • the film-like adhesive 10 is pressurized and heated at 60 to 175 ° C. and 0.3 to 0.7 MPa for 5 minutes or more.
  • the circuit pattern 84 and the second wire are sealed with the sealing material 42.
  • the semiconductor device 200 can be manufactured through such a process.
  • the semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire 88 is embedded.
  • Examples 1 to 8 and Comparative Examples 1 to 4 ⁇ Making an adhesive sheet>
  • Each component shown below was mixed at the blending ratios (parts by mass) shown in Tables 1 and 2 to prepare a varnish of an adhesive composition having a solid content of 40% by mass using cyclohexanone as a solvent.
  • the obtained varnish was filtered through a 100 mesh filter and vacuum defoamed.
  • the varnish after vacuum defoaming was applied as a base film on a polyethylene terephthalate (PET) film having a thickness of 38 ⁇ m and subjected to a mold release treatment.
  • the applied varnish was heated and dried in two steps at 90 ° C. for 5 minutes and then at 140 ° C. for 5 minutes. In this way, an adhesive sheet having a film-like adhesive having a thickness of 110 ⁇ m in a semi-cured (B stage) state was obtained on the base film.
  • PET polyethylene terephthalate
  • Thermosetting resin A-1 Epoxy resin having a dicyclopentadiene structure, manufactured by DIC Corporation, trade name: HP-7200L, epoxy equivalent: 250 to 280 g / eq
  • A-2 Epoxy resin having a dicyclopentadiene structure, manufactured by Nippon Kayaku Co., Ltd., trade name: XD-1000, epoxy equivalent: 254 g / eq
  • A-3 Alicyclic epoxy resin, manufactured by Daicel Corporation, trade name: EHPE3150, epoxy equivalent: 170-190 g / eq
  • A-4 Polyfunctional aromatic epoxy resin, manufactured by Printec Co., Ltd., trade name: VG3101L, epoxy equivalent: 210 g / eq
  • A-5 Cresol novolac type epoxy resin, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent: 209 g / eq
  • A-6 Bisphenol F type epoxy resin (liquid at 25 °
  • B-1-2 Phenolic resin having a dicyclopentadiene structure represented by the general formula (1a), manufactured by JFE Chemical Co., Ltd., trade name: J-DPP-115, hydroxyl group equivalent: 177 to 181 g / eq, softening point.
  • Phenolic resin not having an alicyclic ring B-2-1 Bisphenol A novolak type phenol resin, manufactured by DIC Corporation, trade name: LF-4871, hydroxyl group equivalent: 118 g / eq B-2-2: Phenylaralkyl type phenolic resin, manufactured by Mitsui Chemicals, Inc., trade name: XLC-LL, hydroxyl group equivalent: 175 g / eq B-2-3: Phenyl aralkyl type phenolic resin, manufactured by Air Water Inc., trade name: HE100C-30, hydroxyl group equivalent: 170 g / eq (C)
  • Elastomer C-1 Epoxide group-containing acrylic resin (acrylic rubber), manufactured by Nagase Chemtex Co., Ltd., trade name: SG-P3 solvent-modified product, weight average molecular weight: 800,000, glycidyl functional group monomer ratio: 3% , Tg:
  • C-3 Carboxylic group-containing acrylic resin (acrylic rubber), manufactured by Nagase ChemteX Corporation, trade name: SG-708-6, weight average molecular weight: 700,000, acid value: 9 mgKOH / g, Tg: 4 ° C.
  • D Inorganic filler
  • D-1 Silica filler dispersion, fused silica, manufactured by Admatex Co., Ltd., trade name: SC2050-HLG, average particle size: 0.50 ⁇ m
  • E Curing Accelerator E-1: 1-Cyanoethyl-2-phenylimidazole, manufactured by Shikoku Chemicals Corporation, trade name: Curesol 2PZ-CN
  • the obtained adhesive sheet was evaluated for embedding property and bleeding amount.
  • the embedding property of the adhesive sheet was evaluated by preparing the following evaluation samples.
  • the base film of the film-like adhesive (thickness 110 ⁇ m) obtained above was peeled off and attached to a dicing tape to prepare a dicing die bonding integrated adhesive sheet.
  • a semiconductor wafer (8 inches) having a thickness of 100 ⁇ m was prepared, and this was attached to the adhesive side of the dicing die bonding integrated adhesive sheet by heating to 70 ° C.
  • the semiconductor chip A was obtained by dicing this semiconductor wafer into a 7.5 mm square.
  • a semiconductor wafer (8 inches) with a thickness of 50 ⁇ m and a dicing die bonding integrated adhesive sheet (Hitachi Kasei Co., Ltd., trade name: HR9004-10) (thickness 10 ⁇ m) different from the above are prepared, and the semiconductor wafer is prepared.
  • the semiconductor wafer was prepared.
  • the semiconductor wafer was diced into a 4.5 mm square to obtain a semiconductor chip B with a die bonding film.
  • an evaluation substrate having a total thickness of 260 ⁇ m coated with a solder resist (Taiyo Nisshi Co., Ltd., trade name: AUS308) was prepared so that the die bonding film of the semiconductor chip B and the solder resist of the evaluation substrate were in contact with each other. , 120 ° C., 0.20 MPa, 2 seconds. Then, the film-like adhesive of the semiconductor chip A and the semiconductor wafer of the semiconductor chip B were pressure-bonded under the conditions of 120 ° C., 0.20 MPa, and 1.5 seconds to obtain an evaluation sample. At this time, the alignment was performed so that the semiconductor chip B crimped first was centered on the semiconductor chip A.
  • the evaluation sample obtained in this way is observed with an ultrasonic digital diagnostic imaging device (manufactured by Insight Co., Ltd., probe: 75 MHz) for the presence or absence of voids, and if voids are observed, per unit area.
  • the ratio of void area was calculated, and these analysis results were evaluated as implantability.
  • the evaluation criteria are as follows. The results are shown in Tables 1 and 2. A: No voids were observed. B: Voids were observed, but the proportion was less than 5 area%. C: Voids were observed, and the ratio was 5 area% or more.
  • the adhesive composition according to the present invention has good embedding property at the time of thermal pressure bonding and is excellent in that bleeding can be suppressed. Therefore, the adhesive composition is formed into a film.
  • the film-like adhesive can be useful as FOD (Film Over Die), which is a chip-embedded film-like adhesive, or FOW (Film Over Ware), which is a wire-embedded film-like adhesive.

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  • Organic Chemistry (AREA)
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  • Physics & Mathematics (AREA)
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Abstract

L'invention concerne : une composition d'agent adhésif contenant une résine thermodurcissable, un élastomère et un agent de durcissement qui contient une résine phénolique ayant un noyau alicyclique ; un agent adhésif de type film utilisant une telle composition d'agent adhésif ; et une feuille adhésive et un procédé de fabrication de dispositif à semi-conducteur qui utilisent un tel agent adhésif de type film.
PCT/JP2019/009762 2019-03-11 2019-03-11 Composition d'agent adhésif, agent adhésif de type film, feuille adhésive et procédé de fabrication de dispositif à semi-conducteur WO2020183581A1 (fr)

Priority Applications (7)

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PCT/JP2019/009762 WO2020183581A1 (fr) 2019-03-11 2019-03-11 Composition d'agent adhésif, agent adhésif de type film, feuille adhésive et procédé de fabrication de dispositif à semi-conducteur
PCT/JP2020/009887 WO2020184490A1 (fr) 2019-03-11 2020-03-06 Composition d'agent adhésif, agent adhésif de type film, feuille adhésive et procédé de fabrication de dispositif à semi-conducteur
SG11202109506YA SG11202109506YA (en) 2019-03-11 2020-03-06 Adhesive agent composition, film-like adhesive agent, adhesive sheet, and semiconductor device manufacturing method
CN202080019222.1A CN113544229A (zh) 2019-03-11 2020-03-06 胶黏剂组合物、膜状胶黏剂、胶黏剂片及半导体装置的制造方法
JP2021505054A JPWO2020184490A1 (fr) 2019-03-11 2020-03-06
KR1020217028964A KR20210137041A (ko) 2019-03-11 2020-03-06 접착제 조성물, 필름상 접착제, 접착 시트, 및 반도체 장치의 제조 방법
TW109107632A TW202045676A (zh) 2019-03-11 2020-03-09 接著劑組成物、膜狀接著劑、接著片及半導體裝置的製造方法

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PCT/JP2020/009887 WO2020184490A1 (fr) 2019-03-11 2020-03-06 Composition d'agent adhésif, agent adhésif de type film, feuille adhésive et procédé de fabrication de dispositif à semi-conducteur

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WO2022186285A1 (fr) * 2021-03-05 2022-09-09 昭和電工マテリアルズ株式会社 Adhésif en film, film de fixation de puce/découpage de puce intégré, dispositif à semi-conducteur, et procédé de production de dispositif à semi-conducteur

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WO2023047594A1 (fr) * 2021-09-27 2023-03-30 昭和電工マテリアルズ株式会社 Film adhésif, découpage en dés deux en un et film de fixation de puce, dispositif à semi-conducteur et son procédé de fabrication
JP7356534B1 (ja) 2022-03-30 2023-10-04 株式会社レゾナック 半導体用接着フィルム、ダイシングダイボンディングフィルム、及び半導体装置を製造する方法

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