CN113544229A - 胶黏剂组合物、膜状胶黏剂、胶黏剂片及半导体装置的制造方法 - Google Patents
胶黏剂组合物、膜状胶黏剂、胶黏剂片及半导体装置的制造方法 Download PDFInfo
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- CN113544229A CN113544229A CN202080019222.1A CN202080019222A CN113544229A CN 113544229 A CN113544229 A CN 113544229A CN 202080019222 A CN202080019222 A CN 202080019222A CN 113544229 A CN113544229 A CN 113544229A
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Abstract
本发明公开一种胶黏剂组合物,其包含热固性树脂、固化剂、弹性体及无机填料,固化剂包含具有脂环式环的酚醛树脂,相对于热固性树脂100质量份,弹性体的含量为10~80质量份。并且,还公开一种使用这种胶黏剂组合物的膜状胶黏剂。还公开一种使用这种膜状胶黏剂的胶黏剂片及半导体装置的制造方法。
Description
技术领域
本发明涉及一种胶黏剂组合物、膜状胶黏剂、胶黏剂片及半导体装置的制造方法。
背景技术
一直以来,在接合半导体芯片与用于搭载半导体芯片的支承部件时,主要使用银膏。但是,随着近年来半导体芯片的小型化、集成化等,对于所使用的支承部件也开始要求小型化、细致化等。另一方面,在使用银膏的情况下,有时会出现由糊的溢出或半导体芯片的倾斜引起的打线接合时产生的不良、膜厚控制困难、产生空隙等问题。
因此,近年来一直使用用于接合半导体芯片与支承部件的膜状胶黏剂(adhesive)(例如参考专利文献1)。在使用包括切割带及层叠于切割带上的膜状胶黏剂的胶黏剂片的情况下,通过在半导体晶圆的背面贴附膜状胶黏剂,并通过切割方式将半导体晶圆进行单片化,从而能够获得带膜状胶黏剂的半导体芯片。所获得的带膜状胶黏剂的半导体芯片能够经由膜状胶黏剂贴附于支承部件,并通过热压接进行接合。
以往技术文献
专利文献
专利文献1:日本特开2007-053240号公报
发明内容
发明要解决的技术课题
然而,随着半导体芯片的尺寸变小,在热压接时施加于每单位面积的力变大,有时会产生膜状胶黏剂从半导体芯片溢出的被称为渗出(bleed)的现象。
并且,在将膜状胶黏剂用作作为导线埋入型膜状胶黏剂的导线包裹膜(Film OverWire,FOW)或作为半导体芯片埋入型膜状胶黏剂的芯片包裹膜(Film Over Die,FOD)的情况下,从提高埋入性的观点考虑,在热压接时要求流动性高。因此,有渗出的发生频率及量进一步增大的倾向。根据情况,渗出有时会产生至半导体芯片上表面,由此有可能导致电气不良或打线接合不良。
本发明是鉴于这种实际情况而成的,主要目的在于提供一种在热压接时具有良好的埋入性,并且能够抑制渗出的胶黏剂组合物。
用于解决技术课题的手段
本发明的一方面提供一种胶黏剂组合物。该胶黏剂组合物包含热固性树脂、固化剂、弹性体及无机填料。固化剂包含具有脂环式环的酚醛树脂。相对于热固性树脂100质量份,弹性体的含量为10~80质量份。根据这种胶黏剂组合物,在热压接时具有良好的埋入性,并且能够抑制渗出。
热固性树脂可以为环氧树脂。环氧树脂可以包含双酚F型环氧树脂。
弹性体可以为丙烯酸树脂。
无机填料可以为二氧化硅。以胶黏剂组合物总量为基准,无机填料的含量可以为25质量%以上。
以胶黏剂组合物的总量为基准,热固性树脂、固化剂、弹性体及无机填料的合计含量可以为95质量%以上。
胶黏剂组合物还可以包含固化促进剂。
胶黏剂组合物可以在将第一半导体元件经由第一导线以打线接合的方式连接于基板上,并且在第一半导体元件上压接第二半导体元件而成的半导体装置中,用来压接第二半导体元件并且埋入第一导线的至少一部分。
进一步地,本发明可以涉及一种如下组合物的作为胶黏剂的应用或用来制造胶黏剂的应用,所述组合物包含热固性树脂、固化剂及弹性体,且固化剂包含具有脂环式环的酚醛树脂,所述胶黏剂在将第一半导体元件经由第一导线并以打线接合的方式连接于基板上,并且在第一半导体元件上压接第二半导体元件而成的半导体装置中,用来压接第二半导体元件并且埋入第一导线的至少一部分。
本发明的另一方面提供一种膜状胶黏剂,其是将上述胶黏剂组合物形成为膜状而成。
本发明的另一方面提供一种胶黏剂片,其包括:基材及设置于基材上的上述膜状胶黏剂。
基材可以为切割带。另外,本说明书中,有时将基材为切割带的胶黏剂片称为“切割晶粒接合(dicing/die-bonding)一体型胶黏剂片”。
胶黏剂片也可以还包括层叠于膜状胶黏剂的与基材相反侧的面上的保护膜。
本发明的另一方面提供一种半导体装置的制造方法,其包括:打线接合工序,在基板上经由第一导线电性连接第一半导体元件;层压工序,在第二半导体元件的单面贴附上述膜状胶黏剂;及晶粒接合工序,经由膜状胶黏剂压接贴附有膜状胶黏剂的第二半导体元件,由此将第一导线的至少一部分埋入至膜状胶黏剂中。
另外,半导体装置可以为通过将第一半导体芯片经由第一导线并以打线接合的方式连接于半导体基板上,并且在第一半导体芯片上经由胶黏剂膜压接第二半导体芯片,从而将第一导线的至少一部分埋入至胶黏剂膜中而成的导线埋入型的半导体装置;也可以为将第一导线及第一半导体芯片埋入至胶黏剂膜中而成的芯片埋入型的半导体装置。
发明效果
根据本发明,可提供一种在热压接时具有良好的埋入性,并且能够抑制渗出的胶黏剂组合物。因此,将该胶黏剂组合物形成为膜状而成的膜状胶黏剂可有效用作作为半导体芯片埋入型膜状胶黏剂的芯片包裹膜(Film Over Die,FOD)或作为导线埋入型膜状胶黏剂的导线包裹膜(Film Over Wire,FOW)。并且,根据本发明,可提供使用这种膜状胶黏剂的胶黏剂片及半导体装置的制造方法。
附图说明
图1为表示一实施方式的膜状胶黏剂的示意剖视图。
图2为表示一实施方式的胶黏剂片的示意剖视图。
图3为表示另一实施方式的胶黏剂片的示意剖视图。
图4为表示一实施方式的半导体装置的示意剖视图。
图5为表示一实施方式的半导体装置的制造方法的一系列工序的示意剖视图。
图6为表示一实施方式的半导体装置的制造方法的一系列工序的示意剖视图。
图7为表示一实施方式的半导体装置的制造方法的一系列工序的示意剖视图。
图8为表示一实施方式的半导体装置的制造方法的一系列工序的示意剖视图。
图9为表示一实施方式的半导体装置的制造方法的一系列工序的示意剖视图。
具体实施方式
以下,一边适当参考附图一边对本发明的实施方式进行说明。然而,本发明并不限定于以下的实施方式。
本说明书中,(甲基)丙烯酸是指丙烯酸或与其对应的甲基丙烯酸。关于(甲基)丙烯酰基等其他的类似表述也同样。
[胶黏剂组合物]
本实施方式的胶黏剂组合物包含(A)热固性树脂、(B)固化剂、(C)弹性体及(D)无机填料。胶黏剂组合物为热固性,经过半固化(B阶段)状态且在经固化处理后可成为完全固化物(C阶段)状态。
<(A)成分:热固性树脂>
从黏合性的观点考虑,(A)成分可以为环氧树脂。环氧树脂只要为在分子内具有环氧基的化合物则能够无特别限制地使用。作为环氧树脂,例如可列举双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂、双酚A酚醛清漆型环氧树脂、双酚F酚醛清漆型环氧树脂、二苯乙烯型环氧树脂、含三嗪骨架的环氧树脂、含芴骨架的环氧树脂、三苯酚甲烷型环氧树脂、联苯型环氧树脂、亚二甲苯基型环氧树脂、联苯芳烷基型环氧树脂、萘型环氧树脂、具有脂环式环的环氧树脂等。这些可以单独使用一种或者将两种以上组合使用。这些中,环氧树脂也可以包含双酚F型环氧树脂。环氧树脂通过包含双酚F型环氧树脂,而有埋入性提高的倾向。并且,从流动性的观点考虑,环氧树脂也可以包含具有脂环式环的环氧树脂,具有脂环式环的环氧树脂可以为双环戊二烯型环氧树脂(具有双环戊二烯结构的环氧树脂)。
(A)成分的环氧当量并无特别限制,可以为90~600g/eq、100~500g/eq或120~450g/eq。若(A)成分的环氧当量在这些范围内,则有可获得良好的反应性及流动性的倾向。在(A)成分包含双酚F型环氧树脂时,从埋入性的观点考虑,双酚F型环氧树脂的环氧当量可以小于180g/eq,也可以为170g/eq或160g/eq以下。双酚F型环氧树脂的环氧当量可以为90g/eq以上、100g/eq以上或120g/eq以上。
<(B)成分:固化剂>
(B)成分包含具有脂环式环的酚醛树脂(B-1)。
(B-1)成分为在分子内具有脂环式环及羟基的化合物。羟基可以经由单键或连结基(例如亚烷基、氧化烯基等)而键合于该化合物的脂环式环或脂环式环以外的部位。通过包含(B-1)成分作为固化剂,在热压接时具有良好的埋入性,并且能够抑制渗出。
(B-1)成分例如可以为由下述通式(1)表示的酚醛树脂。
式(1)中,E表示脂环式环,G表示单键或亚烷基,R1分别独立地表示氢原子或一价烃基。n1表示1~10的整数,m表示1~3的整数。
E的碳原子数可以为4~12、5~11或6~10。E可以为单环,也可以为多环,但优选为多环,更优选为双环戊二烯环。G中的亚烷基可以为亚甲基、亚乙基、亚丙基、亚丁基、亚戊基等碳数1~5的亚烷基。G优选为单键。R1中的一价烃基例如可以为甲基、乙基、丙基、丁基、戊基等烷基;苯基、萘基等芳基;吡啶基等杂芳基。R1优选为氢原子。
由通式(1)表示的酚醛树脂可以为由下述通式(1a)表示的酚醛树脂。
式(1a)中,n1的含义与上述相同。
作为由通式(1a)表示的环氧树脂的市售品,例如可列举J-DPP-85、J-DPP-95、J-DPP-115(均为JFE Chemical Corporation制造)等。
(B-1)成分的羟基当量并无特别限制,可以为80~400g/eq、90~350g/eq或100~300g/eq。若(B-1)成分的羟基当量在这些范围内,则有可获得良好的反应性及流动性的倾向。
以胶黏剂组合物总量为基准,(B-1)成分的含量可以为5质量%以上、10质量%以上或15质量%以上。若以胶黏剂组合物总量为基准,(B-1)成分的含量为5质量%以上,则有在热压接时具有更良好的埋入性且能够良好地抑制渗出的倾向。以胶黏剂组合物总量为基准,(B-1)成分的含量可以为50质量%以下、40质量%以下或30质量%以下。
除了(B-1)成分以外,(B)成分还可以包含不具有脂环式环的酚醛树脂(B-2)。作为(B-2)成分,例如例如可列举使苯酚、甲酚、间苯二酚、邻苯二酚、双酚A、双酚F、苯基苯酚、氨基苯酚等酚类及/或α-萘酚、β-萘酚、二羟基萘等萘酚类与甲醛等具有醛基的化合物在酸性催化剂下缩合或共缩合而获得的酚醛清漆型酚醛树脂;由烯丙基化双酚A、烯丙基化双酚F、烯丙基化萘二醇、苯酚酚醛清漆、苯酚等酚类及/或萘酚类与二甲氧基对二甲苯或双(甲氧基甲基)联苯所合成的苯酚芳烷基树脂、萘酚芳烷基树脂、联苯芳烷基型酚醛树脂、苯基芳烷基型酚醛树脂等。这些可以单独使用一种或者将两种以上组合使用。
(B-2)成分的羟基当量并无特别限制,可以为80~400g/eq、90~350g/eq或100~300g/eq。若(B-1)成分的羟基当量在这些范围内,则有可获得良好的反应性及流动性的倾向。
以(B)成分总量为基准,(B-1)成分的含量可以为50~100质量%。以(B)成分总量为基准,(B-1)成分的含量可以为60质量%以上或70质量%以上。以(B)成分总量为基准,(B-2)成分的含量可以为0~50质量%。以(B)成分总量为基准,(B-2)成分的含量可以为40质量%以下或30质量%以下。
从固化性的观点考虑,(A)成分为环氧树脂的情况下的环氧树脂的环氧当量与(B)成分的羟基当量之比(环氧树脂的环氧当量/酚醛树脂的羟基当量)可以为0.30/0.70~0.70/0.30、0.35/0.65~0.65/0.35、0.40/0.60~0.60/0.40或0.45/0.55~0.55/0.45。若该当量比为0.30/0.70以上,则有可获得更充分的固化性的倾向。若该当量比为0.70/0.30以下,则能够防止黏度变得过高,并且能够获得更充分的流动性。
以胶黏剂组合物总量为基准,(A)成分及(B)成分的合计含量可以为30~70质量%。(A)成分及(B)成分的合计含量可以为33质量%以上、36质量%以上或40质量%以上,且可以为65质量%以下、60质量%以下或55质量%以下。若以胶黏剂组合物总量为基准,(A)成分及(B)成分的合计含量为30质量%以上,则有黏合性提高的倾向。若以胶黏剂组合物总量为基准,(A)成分及(B)成分的合计含量为70质量%以下,则有能够防止黏度变得过低且能够进一步抑制渗出的倾向。
<(C)成分:弹性体>
本实施方式的胶黏剂组合物包含(C)弹性体。(C)成分优选为构成弹性体的聚合物的玻璃化转变温度(Tg)为50℃以下的物质。
作为(C)成分,例如可列举丙烯酸树脂、聚酯树脂、聚酰胺树脂、聚酰亚胺树脂、硅酮树脂、丁二烯树脂、丙烯腈树脂及这些的改性体等。
从对溶剂的溶解性、流动性的观点考虑,(C)成分可以包含丙烯酸树脂。在此,所谓丙烯酸树脂,是指包含源自(甲基)丙烯酸酯的构成单元的聚合物。丙烯酸树脂优选为包含源自具有环氧基、醇性或酚性羟基、羧基等交联性官能团的(甲基)丙烯酸酯的构成单元作为构成单元的聚合物。并且,丙烯酸树脂也可以为(甲基)丙烯酸酯与丙烯腈的共聚物等丙烯酸酯橡胶。
丙烯酸树脂的玻璃化转变温度(Tg)可以为-50~50℃或-30~30℃。若丙烯酸树脂的Tg为-50℃以上,则有能够防止胶黏剂组合物的柔软性变得过高的倾向。由此,在切割晶圆时容易切断膜状胶黏剂,能够防止毛刺的产生。若丙烯酸树脂的Tg为50℃以下,则有能够抑制胶黏剂组合物的柔软性下降的倾向。由此,当将膜状胶黏剂贴附于晶圆时,有容易充分埋入空隙的倾向。并且,能够防止由晶圆的密合性的下降所导致的切割时的碎片化(chipping)。在此,玻璃化转变温度(Tg)是指使用TMA试验装置(TA Instruments.制造,TMA400Q)所测定出的值。
丙烯酸树脂的重均分子量(Mw)可以为10万~300万或50万~200万。若丙烯酸树脂的Mw在这些范围内,则能够适当地控制膜形成性、膜状时的强度、挠性、黏性等,并且回流性优异,能够提高埋入性。在此,Mw是指通过凝胶渗透色谱法(GPC)进行测定,并使用基于标准聚苯乙烯的校准曲线进行换算而得的值。
作为丙烯酸树脂的市售品,例如可列举SG-70L、SG-708-6、WS-023EK30、SG-280EK23、SG-P3溶剂变更品(均为Nagase ChemteX Corporation.制造)。
相对于(A)成分100质量份,(C)成分的含量为10~80质量份。相对于(A)成分100质量份,(C)成分的含量可以为20质量份以上、30质量份以上、35质量份以上、40质量份以上或42质量份以上,且可以为75质量份以下、72质量份以下、70质量份以下或68质量份以下。若相对于(A)成分100质量份,(C)成分的含量为10质量份以上,则有膜状胶黏剂的操作性(例如弯折性等)变得良好的倾向。若相对于(A)成分100质量份,(C)成分的含量为80质量份以下,则有能够防止胶黏剂组合物的柔软性变得过高的倾向。由此,在切割晶圆时容易切断膜状胶黏剂,能够防止毛刺的产生。并且,若相对于(A)成分100质量份,(C)成分的含量为80质量份以下,则有导线或半导体芯片的埋入性提高的倾向。
相对于(A)成分及(B)成分的总量100质量份,(C)成分的含量可以为10质量份以上、20质量份以上或30质量份以上,且可以为80质量份以下、75质量份以下、60质量份以下或55质量份以下。若相对于(A)成分及(B)成分的总量100质量份,(C)成分的含量为10质量份以上,则有膜状胶黏剂的操作性(例如弯折性等)变得更良好的倾向。若相对于(A)成分及(B)成分的总量100质量份,(C)成分的含量为80质量份以下,则有能够进一步防止胶黏剂组合物的柔软性变得过高的倾向。由此,有在切割晶圆时容易切断膜状胶黏剂且能够更进一步地防止毛刺的产生的倾向。
<(D)成分:无机填料>
作为无机填料,例如可列举氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅、非晶性二氧化硅等。这些可以单独使用一种,也可以将两种以上组合使用。从所获得的膜状胶黏剂的导热性进一步提高的观点考虑,无机填料可以包含氧化铝、氮化铝、氮化硼、结晶性二氧化硅或非晶性二氧化硅。并且,从调整胶黏剂组合物的熔融黏度的观点及对胶黏剂组合物赋予触变性的观点考虑,无机填料可以为氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、结晶性二氧化硅或非晶性二氧化硅,也可以为二氧化硅(结晶性二氧化硅或非晶性二氧化硅)。
从黏合性进一步提高的观点考虑,(D)成分的平均粒径可以为0.005~0.5μm或0.05~0.3μm。在此,平均粒径是指通过根据BET比表面积进行换算而求出的值。
关于(D)成分,从其表面与溶剂、其他成分等的相溶性、黏合强度的观点考虑,可以通过表面处理剂进行表面处理。作为表面处理剂,例如可列举硅烷偶联剂等。作为硅烷偶联剂的官能团,例如可列举乙烯基、(甲基)丙烯酰基、环氧基、巯基、氨基、二氨基、烷氧基、乙氧基等。
以胶黏剂组合物总量为基准,(D)成分的含量可以为25质量%以上,也可以为28质量%以上或30质量%以上。若以胶黏剂组合物总量为基准,(D)成分的含量为25质量%以上,则有固化前的黏合层的切割性提高且固化后的黏合层的黏合力(bond force)提高的倾向。由此,例如在FOD/FOW用途的较厚的(例如20μm以上,优选为30μm以上的)膜状胶黏剂中也确保充分的切割性。(D)成分的含量的上限并无特别限制,以胶黏剂组合物总量为基准,可以为60质量%以下、50质量%以下或40质量%以下。若以胶黏剂组合物总量为基准,(D)成分的含量为60质量%以下,则能够抑制流动性的下降,并且能够防止固化后的膜状胶黏剂的弹性模量变得过高。
本实施方式的胶黏剂组合物中,(A)成分、(B)成分、(C)成分及(D)成分为主成分,以胶黏剂组合物总量为基准,(A)成分、(B)成分、(C)成分及(D)成分的合计含量可以为95质量%以上或97质量%以上,且可以为100质量%以下或99质量%以下。
<(E)成分:固化促进剂>
本实施方式的胶黏剂组合物可以包含(E)固化促进剂。固化促进剂并无特别限定,可以使用通常所使用的促进剂。作为(E)成分,例如可列举咪唑类及其衍生物、有机磷系化合物、仲胺类、叔胺类、季铵盐等。这些可以单独使用一种或者将两种以上组合使用。这些中,从反应性的观点考虑,(E)成分可以为咪唑类及其衍生物。
作为咪唑类,例如可列举2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-甲基咪唑等。这些可以单独使用一种或者将两种以上组合使用。
相对于(A)成分、(B)成分及(C)成分的总量100质量份,(E)成分的含量可以为0.01~3质量份或0.03~1质量份。若(E)成分的含量在这些范围内,则有能够兼具固化性及可靠性的倾向。
<其他成分>
本实施方式的胶黏剂组合物还可以包含抗氧化剂、硅烷偶联剂、流变控制剂等作为其他成分。相对于(A)成分、(B)成分及(C)成分的总量100质量份,这些成分的含量可以为0.01~3质量份。
本实施方式的胶黏剂组合物可以用作用溶剂稀释的胶黏剂清漆。溶剂只要为能够溶解(D)成分以外的成分的溶剂则并无特别限制。作为溶剂,例如可列举甲苯、二甲苯、均三甲苯、异丙苯、对异丙基甲苯等芳香族烃;己烷、庚烷等脂肪族烃;甲基环己烷等环状烷烃;四氢呋喃、1,4-二恶烷等环状醚;丙酮、甲基乙基酮、甲基异丁基酮、环已酮、4-羟基-4-甲基-2-戊酮等酮;乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁内酯等酯;碳酸亚乙酯、碳酸亚丙酯等碳酸酯;N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基-2-吡咯烷酮等酰胺等。这些可以单独使用一种或者将两种以上组合使用。这些中,从溶解性及沸点的观点考虑,溶剂可以为甲苯、二甲苯、甲基乙基酮、甲基异丁基酮或环已酮。
以胶黏剂清漆的总质量为基准,胶黏剂清漆中的固体成分浓度可以为10~80质量%。
胶黏剂清漆可以通过将(A)成分、(B)成分、(C)成分、(D)成分及溶剂以及根据需要的(E)成分及其他成分进行混合、混练而制备。混合及混练能够通过将通常的搅拌机、研磨搅拌机、三辊、球磨机、珠磨机等分散机适当组合而进行。在混合(D)成分的情况下,通过在预先混合(D)成分与低分子量成分后调配高分子量成分,能够缩短进行混合的时间。并且,在制备胶黏剂清漆后,可以通过真空脱气等将清漆中的气泡去除。
[膜状胶黏剂]
图1为表示一实施方式的膜状胶黏剂的示意剖视图。膜状胶黏剂10为将上述的胶黏剂组合物形成为膜状而成的胶黏剂。膜状胶黏剂10可以为半固化(B阶段)状态。这种膜状胶黏剂10能够通过将胶黏剂组合物涂布于支承膜来形成。在使用胶黏剂清漆的情况下,通过将胶黏剂清漆涂布于支承膜,并进行加热干燥而将溶剂去除,由此能够形成膜状胶黏剂10。
支承膜并无特别限制,例如可列举聚四氟乙烯、聚乙烯、聚丙烯、聚甲基戊烯、聚对苯二甲酸乙二醇酯、聚酰亚胺等的膜。支承膜的厚度例如可以为10~200μm或20~170μm。
作为将胶黏剂清漆涂布于支承膜的方法,能够使用公知的方法,例如可列举刀涂法、辊涂法、喷涂法、凹版涂布法、棒涂法、帘涂法等。加热干燥的条件只要为所使用的溶剂充分挥发的条件则并无特别限制,例如可以为50~200℃下0.1分钟~90分钟。
膜状胶黏剂的厚度能够根据用途而适当进行调整。从充分埋入半导体芯片、导线、基板的配线电路等凹凸等的观点考虑,膜状胶黏剂的厚度可以为20~200μm、30~200μm或40~150μm。
[胶黏剂片]
图2为表示一实施方式的胶黏剂片的示意剖视图。胶黏剂片100包括基材20及设置于基材上的上述的膜状胶黏剂10。
基材20并无特别限制,可以为基材膜。基材膜可以为与上述支承膜相同的膜。
基材20也可以为切割带。这种胶黏剂片能够用作切割晶粒接合一体型胶黏剂片。在这种情况下,由于对半导体晶圆的层压工序为一次,因此能够实现工作的效率化。
作为切割带,例如可列举聚四氟乙烯膜、聚对苯二甲酸乙二醇酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚酰亚胺膜等塑胶膜等。并且,切割带可以根据需要进行底涂涂布、UV处理、电晕放电处理、抛光处理、蚀刻处理等表面处理。切割带优选为具有胶黏性的带。这种切割带可以为对上述塑胶膜赋予胶黏性的带,也可以为在上述塑胶膜的单面设置有压敏胶黏剂层的带。
与形成上述的膜状胶黏剂的方法同样地,胶黏剂片100能够通过将胶黏剂组合物涂布于基材膜来形成。将胶黏剂组合物涂布于基材20的方法可以与将上述的胶黏剂组合物涂布于支承膜的方法相同。
胶黏剂片100可以使用预先制作的膜状胶黏剂来形成。在这种情况下,胶黏剂片100能够通过使用辊层压机、真空层压机等在规定条件(例如室温(20℃)或加热状态)下进行层压来形成。从能够连续地制造及效率良好方面考虑,胶黏剂片100优选在加热状态下使用辊层压机来形成。
从半导体芯片、导线、基板的配线电路等凹凸等的埋入性的观点考虑,膜状胶黏剂10的厚度可以为20~200μm、30~200μm或40~150μm。若膜状胶黏剂10的厚度为20μm以上,则有可获得更充分的黏合力的倾向,若膜状胶黏剂10的厚度为200μm以下,则经济且能够响应半导体装置的小型化的要求。
图3为表示另一实施方式的胶黏剂片的示意剖视图。胶黏剂片110还包括层叠于膜状胶黏剂10的与基材20相反侧的面上的保护膜30。保护膜30可以为与上述的支承膜相同的膜。保护膜的厚度例如可以为15~200μm或70~170μm。
[半导体装置]
图4为表示一实施方式的半导体装置的示意剖视图。半导体装置200是通过将第一阶段的第一半导体元件Wa经由第一导线88并以打线接合的方式连接于基板14,并且在第一半导体元件Wa上,经由膜状胶黏剂10压接第二半导体元件Waa,从而将第一导线88的至少一部分埋入至膜状胶黏剂10中而成的半导体装置。半导体装置可以为将第一导线88的至少一部分埋入而成的导线埋入型的半导体装置,也可以为将第一导线88及第一半导体元件Wa埋入而成的半导体装置。并且,半导体装置200中,进一步经由第二导线98将基板14与第二半导体元件Waa电性连接,并且通过封装材料42而将第二半导体元件Waa封装。
第一半导体元件Wa的厚度可以为10~170μm,第二半导体元件Waa的厚度可以为20~400μm。埋入至膜状胶黏剂10内部的第一半导体元件Wa为用于驱动半导体装置200的控制器芯片。
基板14包括电路图案84、电路图案94在表面各形成有两处的有机基板90。第一半导体元件Wa经由胶黏剂41压接于电路图案94上。第二半导体元件Waa以覆盖未压接有第一半导体元件Wa的电路图案94、第一半导体元件Wa及电路图案84的一部分的方式经由膜状胶黏剂10压接于基板14。在由基板14上的电路图案84、电路图案94引起的凹凸的台阶中埋入有膜状胶黏剂10。并且,利用树脂制的封装材料42而将第二半导体元件Waa、电路图案84及第二导线98封装。
[半导体装置的制造方法]
本实施方式的半导体装置的制造方法包括:在基板上经由第一导线电性连接第一半导体元件的第一打线接合工序;在第二半导体元件的单面贴附上述的膜状胶黏剂的层压工序;及经由膜状胶黏剂压接贴附有膜状胶黏剂的第二半导体元件,由此将第一导线的至少一部分埋入至膜状胶黏剂中的晶粒接合工序。
图5~图9为表示一实施方式的半导体装置的制造方法的一系列工序的示意剖视图。本实施方式的半导体装置200为将第一导线88及第一半导体元件Wa埋入而成的半导体装置,可以通过以下顺序而制造。首先,如图5所示,在基板14上的电路图案94上压接具有胶黏剂41的第一半导体元件Wa,并且经由第一导线88将基板14上的电路图案84与第一半导体元件Wa电性接合连接(第一打线接合工序)。
接着,在半导体晶圆(例如厚度为100μm、尺寸为8英寸)的单面上层压胶黏剂片100,并剥去基材20,由此在半导体晶圆的单面贴附膜状胶黏剂10(例如厚度为110μm)。并且,在将切割带贴合于膜状胶黏剂10后,切割为规定的大小(例如7.5mm方形),由此如图6所示,获得贴附有膜状胶黏剂10的第二半导体元件Waa(层压工序)。
层压工序的温度条件可以为50~100℃或60~80℃。若层压工序的温度为50℃以上,则可获得与半导体晶圆的良好的密合性。若层压工序的温度为100℃以下,则可抑制膜状胶黏剂10在层压工序中过度流动,因此能够防止引起厚度的变化等。
作为切割方法,例如可列举使用旋转刀刃的刀片切割、通过激光将膜状胶黏剂或晶圆与膜状胶黏剂这两者切断的方法等。
并且,将贴附有膜状胶黏剂10的第二半导体元件Waa压接于经由第一导线88接合连接有第一半导体元件Wa的基板14。具体而言,如图7所示,以通过膜状胶黏剂10覆盖第一导线88及第一半导体元件Wa的方式载置贴附有膜状胶黏剂10的第二半导体元件Waa,接着,如图8所示,通过使第二半导体元件Waa压接于基板14而将第二半导体元件Waa固定于基板14(晶粒接合工序)。在晶粒接合工序中,优选将膜状胶黏剂10在80~180℃、0.01~0.50MPa的条件下压接0.5秒~3.0秒。在晶粒接合工序之后,将膜状胶黏剂10在60~175℃、0.3~0.7MPa的条件下加压及加热5分钟以上。
接着,如图9所示,在将基板14与第二半导体元件Waa经由第二导线98电性连接后(第二打线接合工序),利用封装材料42将电路图案84、第二导线98及第二半导体元件Waa封装。通过经过这种工序而能够制造半导体装置200。
作为其他实施方式,半导体装置也可以为将第一导线88的至少一部分埋入而成的导线埋入型的半导体装置。
实施例
以下,列举实施例来对本发明进行更具体的说明。但本发明并不限定于这些实施例。
(实施例1~8及比较例1~4)
<胶黏剂片的制作>
将以下所示的各成分以表1及表2所示的调配比例(质量份)混合,并使用环已酮作为溶剂来制备了固体成分为40质量%的胶黏剂组合物的清漆。接着,利用100目的过滤器对所获得的清漆进行过滤,并进行了真空排气。将真空排气后的清漆涂布于作为基材膜的厚度38μm的已实施脱模处理的聚对苯二甲酸乙二醇酯(PET)膜上。以90℃下5分钟、接着140℃下5分钟的两个阶段对所涂布的清漆进行加热干燥。如此获得了在基材膜上具有处于半固化(B阶段)状态的厚度110μm的膜状胶黏剂的胶黏剂片。
另外,表1及表2中的各成分如下所述。
(A)热固性树脂
A-1:具有双环戊二烯结构的环氧树脂,DIC CORPORATION制造,商品名:HP-7200L,环氧当量:250~280g/eq
A-2:具有双环戊二烯结构的环氧树脂,Nippon Kayaku Co.,Ltd.制造,商品名:XD-1000,环氧当量:254g/eq
A-3:脂环式环氧树脂,Daicel Corporation制造,商品名:EHPE3150,环氧当量:170~190g/eq
A-4:多官能芳香族环氧树脂,Printec Corporation制造,商品名:VG3101L,环氧当量:210g/eq
A-5:甲酚酚醛清漆型环氧树脂,NIPPON STEEL Chemical&Material Co.,Ltd.制造,商品名:YDCN-700-10,环氧当量:209g/eq
A-6:双酚F型环氧树脂(在25℃下为液体),DIC CORPORATION制造,商品名:EXA-830CRP,环氧当量:159g/eq
(B)固化剂
(B-1)具有脂环式环的酚醛树脂
B-1-1:由通式(1a)表示的具有双环戊二烯结构的酚醛树脂,JFE CHEMICALCORPORATION制造,商品名:J-DPP-85,羟基当量:164~167g/eq,软化点85~89℃
B-1-2:由通式(1a)表示的具有双环戊二烯结构的酚醛树脂,JFE CHEMICALCORPORATION制造,商品名:J-DPP-115,羟基当量:177~181g/eq,软化点107~116℃
(B-2)不具有脂环式环的酚醛树脂
B-2-1:双酚A酚醛清漆型酚醛树脂,DIC CORPORATION制造,商品名:LF-4871,羟基当量:118g/eq
B-2-2:苯基芳烷基型酚醛树脂,Mitsui Chemicals,Inc.制造,商品名:XLC-LL,羟基当量:175g/eq
B-2-3:苯基芳烷基型酚醛树脂,AIR WATER INC制造,商品名:HE100C-30,羟基当量:170g/eq
(C)弹性体
C-1:含环氧基的丙烯酸树脂(丙烯酸酯橡胶),Nagase ChemteX Corporation.制造,商品名:SG-P3溶剂变更品、重均分子量:80万、缩水甘油基官能团单体比率:3%、Tg:-7℃
C-2:丙烯酸树脂(丙烯酸酯橡胶),Nagase ChemteX Corporation.制造,商品名:SG-70L,重均分子量:90万,酸价:5mgKOH/g,Tg:-13℃
C-3:含羧基的丙烯酸树脂(丙烯酸酯橡胶),Nagase ChemteX Corporation.制造,商品名:SG-708-6,重均分子量:70万,酸价:9mgKOH/g,Tg:4℃
(D)无机填料
D-1:二氧化硅填料分散液,熔融二氧化硅,Admatechs Company Limited制造,商品名:SC2050-HLG,平均粒径:0.50μm
(E)固化促进剂
E-1:1-氰乙基-2-苯基咪唑,SHIKOKU CHEMICALS CORPORATION.制造,商品名:固唑(Curezol)2PZ-CN
<各种物性的评价>
对所获得的胶黏剂片进行埋入性及渗出量的评价。
[埋入性评价]
制作以下评价样品来对胶黏剂片的埋入性进行了评价。剥去在上述所获得的膜状胶黏剂(厚度110μm)的基材膜并将其贴附于切割带,制作了切割晶粒接合一体型胶黏剂片。接着,准备厚度100μm的半导体晶圆(8英寸),将其加热至70℃并贴附于切割晶粒接合一体型胶黏剂片的胶黏剂侧。其后,将该半导体晶圆切割为7.5mm方形,由此获得了半导体芯片A。接着,准备厚度为50μm的半导体晶圆(8英寸)及与上述不同的切割晶粒接合一体型胶黏剂片(Hitachi Chemical Co.,Ltd.,商品名:HR9004-10)(厚度10μm),将半导体晶圆加热至70℃并贴附于切割晶粒接合一体型胶黏剂片的胶黏剂侧。其后,将该半导体晶圆切割为4.5mm方形,由此获得了带有晶粒接合膜的半导体芯片B。接着,准备涂布有阻焊剂(TAIYONIPPON SANSO CORPORATION,商品名:AUS308)的总厚度为260μm的评价用基板,以半导体芯片B的晶粒接合膜与评价用基板的阻焊剂接触的方式,在120℃、0.20MPa、2秒的条件下进行了压接。其后,以半导体芯片A的膜状胶黏剂与半导体芯片B的半导体晶圆接触的方式,在120℃、0.20MPa、1.5秒的条件下进行压接,获得了评价样品。此时,以先前所压接的半导体芯片B处于半导体芯片A的中央的方式进行了对位。对以这种方式获得的评价样品,利用超声波数字图像诊断装置(insite co.,ltd.制造,探针:75MHz)来观测空隙的观测的有无,在观测到空隙的情况下算出每单位面积的空隙的面积的比例,并将这些分析结果作为埋入性而进行了评价。评价基准如下所述。将结果示于表1及表2中。
A:未观测到空隙。
B:虽观测到空隙,但其比例小于5面积%。
C:观测到空隙,且其比例为5面积%以上。
[渗出量评价]
对在上述埋入性评价中评价为“A”或“B”的样品进行了渗出量评价。以与在上述埋入性评价中所制作的评价样品相同的方式,制作了渗出量评价的评价样品。使用显微镜,从评价样品的四边的中心,测定膜状胶黏剂的渗出量,将其最大值设为渗出量。将结果示于表1及表2中。
[表1]
[表2]
如表1及表2所示,与不包含具有脂环式环的酚醛树脂的比较例1~4相比,包含具有脂环式环的酚醛树脂的实施例1~6能够维持良好的埋入性,并且能够抑制渗出。根据这些结果确认到:本发明的胶黏剂组合物在热压接时具有良好的埋入性,并且能够抑制渗出。
产业上的可利用性
如以上结果所示,本发明的胶黏剂组合物在热压接时的埋入性良好、能够抑制渗出等方面优异,因此将胶黏剂组合物形成为膜状而成的膜状胶黏剂可有效用作作为芯片埋入型膜状胶黏剂的芯片包裹膜(Film Over Die,FOD)或作为导线埋入型膜状胶黏剂的导线包裹膜(Film Over Wire,FOW)。
符号说明
10-膜状胶黏剂,14-基板,20-基材,30-保护膜,41-胶黏剂,42-封装材料,84、94-电路图案,88-第一导线,90-有机基板,98-第二导线,100、110-胶黏剂片,200-半导体装置,Wa-第一半导体元件,Waa-第二半导体元件。
Claims (13)
1.一种胶黏剂组合物,其包含热固性树脂、固化剂、弹性体及无机填料,
所述固化剂包含具有脂环式环的酚醛树脂,
相对于所述热固性树脂100质量份,所述弹性体的含量为10~80质量份。
2.根据权利要求1所述的胶黏剂组合物,其中,
所述热固性树脂为环氧树脂。
3.根据权利要求2所述的胶黏剂组合物,其中,
所述环氧树脂包含双酚F型环氧树脂。
4.根据权利要求1至3中任一项所述的胶黏剂组合物,其中,
所述弹性体为丙烯酸树脂。
5.根据权利要求1至4中任一项所述的胶黏剂组合物,其中,
无机填料为二氧化硅。
6.根据权利要求1至5中任一项所述的胶黏剂组合物,其中,
以胶黏剂组合物总量为基准,所述无机填料的含量为25质量%以上。
7.根据权利要求1至6中任一项所述的胶黏剂组合物,其中,
以胶黏剂组合物总量为基准,所述热固性树脂、所述固化剂、所述弹性体及所述无机填料的合计含量为95质量%以上。
8.根据权利要求1至7中任一项所述的胶黏剂组合物,其还包含固化促进剂。
9.一种膜状胶黏剂,其是将权利要求1至8中任一项所述的胶黏剂组合物形成为膜状而成。
10.一种胶黏剂片,其包括:
基材;及
设置于所述基材上的权利要求9所述的膜状胶黏剂。
11.根据权利要求10所述的胶黏剂片,其中,
所述基材为切割带。
12.根据权利要求10或11所述的胶黏剂片,其还包括层叠于所述膜状胶黏剂的与所述基材相反侧的面上的保护膜。
13.一种半导体装置的制造方法,其包括:
打线接合工序,在基板上经由第一导线电性连接第一半导体元件;
层压工序,在第二半导体元件的单面贴附权利要求9所述的膜状胶黏剂;及
晶粒接合工序,经由所述膜状胶黏剂压接贴附有所述膜状胶黏剂的第二半导体元件,由此将所述第一导线的至少一部分埋入至所述膜状胶黏剂中。
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PCT/JP2019/009762 WO2020183581A1 (ja) | 2019-03-11 | 2019-03-11 | 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法 |
JPPCT/JP2019/009762 | 2019-03-11 | ||
PCT/JP2020/009887 WO2020184490A1 (ja) | 2019-03-11 | 2020-03-06 | 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010265359A (ja) * | 2009-05-13 | 2010-11-25 | Hitachi Chem Co Ltd | 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 |
JP2011174010A (ja) * | 2010-02-25 | 2011-09-08 | Hitachi Chem Co Ltd | 粘接着剤組成物、回路部材接続用粘接着剤シート及び半導体装置の製造方法 |
KR20160000360A (ko) * | 2014-06-24 | 2016-01-04 | 도레이첨단소재 주식회사 | 내마이그레이션성 접착제 조성물 및 이를 이용한 커버레이 필름과 양면 접착테이프 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004018718A (ja) * | 2002-06-18 | 2004-01-22 | Mitsui Chemicals Inc | 半導体装置用接着剤組成物 |
JP2004059859A (ja) * | 2002-07-31 | 2004-02-26 | Mitsui Chemicals Inc | フィルム状接着剤及びその接着工法並びに該フィルム状接着剤を用いた半導体装置 |
US7709085B2 (en) * | 2003-12-08 | 2010-05-04 | Sekisui Chemical Co., Ltd. | Thermosetting resin composition, resin sheet and resin sheet for insulated substrate |
KR20060000360A (ko) * | 2004-06-28 | 2006-01-06 | 삼성전자주식회사 | 화상 형성 장치의 데이터 처리 방법 및 장치 |
JP4668001B2 (ja) | 2005-08-18 | 2011-04-13 | リンテック株式会社 | ダイシング・ダイボンド兼用シートおよびこれを用いた半導体装置の製造方法 |
KR101082448B1 (ko) * | 2007-04-30 | 2011-11-11 | 주식회사 엘지화학 | 접착 수지 조성물 및 이를 이용한 다이싱 다이 본딩 필름 |
JP2010118554A (ja) * | 2008-11-13 | 2010-05-27 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP6135202B2 (ja) * | 2013-03-08 | 2017-05-31 | 日立化成株式会社 | 半導体装置及び半導体装置の製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010265359A (ja) * | 2009-05-13 | 2010-11-25 | Hitachi Chem Co Ltd | 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 |
JP2011174010A (ja) * | 2010-02-25 | 2011-09-08 | Hitachi Chem Co Ltd | 粘接着剤組成物、回路部材接続用粘接着剤シート及び半導体装置の製造方法 |
KR20160000360A (ko) * | 2014-06-24 | 2016-01-04 | 도레이첨단소재 주식회사 | 내마이그레이션성 접착제 조성물 및 이를 이용한 커버레이 필름과 양면 접착테이프 |
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