KR102444486B1 - Adhesive composition, film adhesive, adhesive sheet, and manufacturing method of a semiconductor device - Google Patents
Adhesive composition, film adhesive, adhesive sheet, and manufacturing method of a semiconductor device Download PDFInfo
- Publication number
- KR102444486B1 KR102444486B1 KR1020207022893A KR20207022893A KR102444486B1 KR 102444486 B1 KR102444486 B1 KR 102444486B1 KR 1020207022893 A KR1020207022893 A KR 1020207022893A KR 20207022893 A KR20207022893 A KR 20207022893A KR 102444486 B1 KR102444486 B1 KR 102444486B1
- Authority
- KR
- South Korea
- Prior art keywords
- adhesive
- film
- epoxy resin
- component
- adhesive composition
- Prior art date
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- 239000000853 adhesive Substances 0.000 title claims abstract description 177
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 174
- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 239000000203 mixture Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000003822 epoxy resin Substances 0.000 claims abstract description 57
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 57
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 claims abstract description 23
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 229920001971 elastomer Polymers 0.000 claims abstract description 11
- 239000000806 elastomer Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 22
- 239000005011 phenolic resin Substances 0.000 claims description 19
- 239000004925 Acrylic resin Substances 0.000 claims description 15
- 229920000178 Acrylic resin Polymers 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 9
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 238000002788 crimping Methods 0.000 claims description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- 238000011156 evaluation Methods 0.000 description 22
- 239000004593 Epoxy Substances 0.000 description 15
- 239000002966 varnish Substances 0.000 description 13
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 11
- -1 diglycidyl ether compound Chemical class 0.000 description 11
- 230000002349 favourable effect Effects 0.000 description 10
- 150000002430 hydrocarbons Chemical group 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 239000000523 sample Substances 0.000 description 9
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 125000002947 alkylene group Chemical group 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 125000003367 polycyclic group Chemical group 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000378 calcium silicate Substances 0.000 description 2
- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000000391 magnesium silicate Substances 0.000 description 2
- 229910052919 magnesium silicate Inorganic materials 0.000 description 2
- 235000019792 magnesium silicate Nutrition 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 2
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 125000006833 (C1-C5) alkylene group Chemical group 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- BLBVJHVRECUXKP-UHFFFAOYSA-N 2,3-dimethoxy-1,4-dimethylbenzene Chemical group COC1=C(C)C=CC(C)=C1OC BLBVJHVRECUXKP-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000005549 heteroarylene group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000005551 pyridylene group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
-
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- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- C09J7/00—Adhesives in the form of films or foils
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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Abstract
열경화성 수지와 경화제와 엘라스토머를 함유하고, 열경화성 수지가 지환식 고리를 갖는 에폭시 수지를 포함하는 접착제 조성물이 개시된다. 또한, 이러한 접착제 조성물을 이용한 필름형 접착제가 개시된다. 또한, 이러한 필름형 접착제를 이용한 접착 시트 및 반도체 장치의 제조 방법이 제공된다.Disclosed is an adhesive composition containing a thermosetting resin, a curing agent, and an elastomer, wherein the thermosetting resin includes an epoxy resin having an alicyclic ring. Moreover, the film adhesive using such an adhesive composition is disclosed. Moreover, the manufacturing method of the adhesive sheet and semiconductor device using such a film adhesive is provided.
Description
본 발명은 접착제 조성물, 필름형 접착제, 접착 시트 및 반도체 장치의 제조 방법에 관한 것이다.The present invention relates to an adhesive composition, a film adhesive, an adhesive sheet, and a method for manufacturing a semiconductor device.
종래, 반도체 칩과 반도체 칩 탑재용의 지지 부재와의 접합에는, 주로 은 페이스트가 사용되고 있다. 그러나, 최근의 반도체 칩의 소형화·집적화에 따라, 사용되는 지지 부재에도 소형화, 세밀화가 요구되고 있다. 한편, 은 페이스트를 이용하는 경우에는, 페이스트의 비어져 나옴 또는 반도체 칩의 기울기에 기인하는 와이어 본딩 시에 있어서의 문제점의 발생, 막 두께 제어의 곤란성, 보이드 발생 등의 문제가 생기는 경우가 있다.Conventionally, silver paste is mainly used for joining a semiconductor chip and the support member for semiconductor chip mounting. However, in accordance with the recent miniaturization and integration of semiconductor chips, miniaturization and miniaturization of the supporting members used are also required. On the other hand, when a silver paste is used, problems, such as generation|occurrence|production of the problem at the time of wire bonding resulting from the protrusion of a paste or the inclination of a semiconductor chip, difficulty in film thickness control, generation|occurrence|production of a void, etc. may arise.
그 때문에, 최근, 반도체 칩과 지지 부재를 접합하기 위한 필름형 접착제가 사용되고 있다(예컨대, 특허문헌 1 참조). 다이싱 테이프와 다이싱 테이프 상에 적층된 필름형 접착제를 구비하는 접착 시트를 이용하는 경우, 반도체 웨이퍼의 이면에 필름형 접착제를 첩부하고, 다이싱에 의해 반도체 웨이퍼를 개편화함으로써, 필름형 접착제를 갖는 반도체 칩을 얻을 수 있다. 얻어진 필름형 접착제를 갖는 반도체 칩은, 필름형 접착제를 통해 지지 부재에 첩부하고, 열 압착에 의해 접합할 수 있다.Therefore, in recent years, the film adhesive for bonding a semiconductor chip and a support member is used (for example, refer patent document 1). When using the adhesive sheet provided with the film adhesive laminated|stacked on the dicing tape and the dicing tape, a film adhesive is affixed on the back surface of a semiconductor wafer, and a semiconductor wafer is separated into pieces by dicing, semiconductor chips can be obtained. The semiconductor chip with the obtained film adhesive can be affixed to a support member via a film adhesive, and can be joined by thermocompression bonding.
그러나, 반도체 칩의 사이즈가 작아짐에 따라, 열 압착 시에 단위 면적당에 가해지는 힘이 커져, 필름형 접착제가 반도체 칩으로부터 비어져 나오는, 블리드라는 현상이 발생하는 경우가 있다.However, as the size of a semiconductor chip becomes small, the force applied per unit area at the time of thermocompression bonding becomes large, and the phenomenon called bleed which a film adhesive protrudes from a semiconductor chip may generate|occur|produce.
또한, 필름형 접착제를 와이어 매립형 필름형 접착제인 FOW(Film Over Wire) 또는 반도체 칩 매립형 필름형 접착제인 FOD(Film Over Die)로서 이용하는 경우는, 매립성을 향상시키는 관점에서, 열 압착 시에 높은 유동성이 요구된다. 그 때문에, 블리드의 발생 빈도 및 양이 더욱 증대하는 경향이 있다. 경우에 따라서는, 블리드가 반도체 칩 상면에까지 생기는 경우가 있고, 이에 의해, 전기 불량 또는 와이어 본딩 불량으로 이어질 우려가 있다.In addition, when using the film adhesive as FOW (Film Over Wire), which is a wire embedded film adhesive, or FOD (Film Over Die), which is a semiconductor chip embedded film adhesive, from the viewpoint of improving embedding properties, high Liquidity is required. Therefore, there is a tendency for the occurrence frequency and amount of bleed to further increase. In some cases, bleed may even occur on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.
본 발명은, 이러한 실정을 감안하여 이루어진 것이며, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능한 접착제 조성물을 제공하는 것을 주된 목적으로 한다.The present invention was made in view of such a situation, and its main object is to provide an adhesive composition capable of suppressing bleed while having good embedding properties at the time of thermocompression bonding.
본 발명의 일 측면은, 열경화성 수지와 경화제와 엘라스토머를 함유하고, 열경화성 수지가 지환식 고리를 갖는 에폭시 수지를 포함하는 접착제 조성물을 제공한다. 이러한 접착제 조성물에 의하면, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능해진다.One aspect of the present invention provides an adhesive composition containing a thermosetting resin, a curing agent, and an elastomer, and the thermosetting resin includes an epoxy resin having an alicyclic ring. According to such an adhesive composition, it becomes possible to suppress bleed, having favorable embedding property at the time of thermocompression bonding.
경화제는, 페놀 수지를 포함하고 있어도 좋다. 또한, 엘라스토머는, 아크릴 수지를 포함하고 있어도 좋다.The curing agent may contain a phenol resin. Moreover, the elastomer may contain the acrylic resin.
열경화성 수지는, 지환식 고리를 갖지 않는 방향족 에폭시 수지를 더 포함하고 있어도 좋다. 지환식 고리를 갖지 않는 방향족 에폭시 수지는, 25℃에서 액체여도 좋다.The thermosetting resin may further contain the aromatic epoxy resin which does not have an alicyclic ring. The aromatic epoxy resin which does not have an alicyclic ring may be liquid at 25 degreeC.
접착제 조성물은, 무기 필러를 더 함유하고 있어도 좋다. 또한, 접착제 조성물은, 경화 촉진제를 더 함유하고 있어도 좋다.The adhesive composition may further contain an inorganic filler. Moreover, the adhesive composition may contain the hardening accelerator further.
접착제 조성물은, 기판 상에 제1 와이어를 통해 제1 반도체 소자가 와이어 본딩 접속되며, 제1 반도체 소자 상에, 제2 반도체 소자가 압착되어 이루어지는 반도체 장치에 있어서, 제2 반도체 소자를 압착하며 제1 와이어의 적어도 일부를 매립하기 위해 이용되는 것이어도 좋다.The adhesive composition is a semiconductor device in which a first semiconductor element is wire-bonded on a substrate through a first wire, and a second semiconductor element is pressed on the first semiconductor element. One used for embedding at least a part of the wire may be used.
본 발명은 또한, 열경화성 수지와 경화제와 엘라스토머를 함유하고, 열경화성 수지가 지환식 고리를 갖는 에폭시 수지를 포함하는 조성물의, 기판 상에 제1 와이어를 통해 제1 반도체 소자가 와이어 본딩 접속되며, 제1 반도체 소자 상에, 제2 반도체 소자가 압착되어 이루어지는 반도체 장치에 있어서, 제2 반도체 소자를 압착하며 제1 와이어의 적어도 일부를 매립하기 위해 이용되는, 접착제로서의 응용 또는 접착제의 제조를 위한 응용에 관한 것이어도 좋다.The present invention also relates to a composition comprising a thermosetting resin, a curing agent, and an elastomer, wherein the thermosetting resin comprises an epoxy resin having an alicyclic ring, a first semiconductor element is wire-bonded on a substrate through a first wire; A semiconductor device in which a second semiconductor element is pressed onto a first semiconductor element, wherein the second semiconductor element is pressed and used for embedding at least a part of a first wire, for application as an adhesive or for manufacturing an adhesive It may be about
다른 측면에 있어서, 본 발명은, 전술한 접착제 조성물을 필름형으로 형성하여 이루어지는 필름형 접착제를 제공한다.Another aspect WHEREIN: This invention provides the film adhesive which forms the adhesive composition mentioned above in film form.
다른 측면에 있어서, 본 발명은, 기재와 기재 상에 마련된 전술한 필름형 접착제를 구비하는 접착 시트를 제공한다.Another aspect WHEREIN: This invention provides the adhesive sheet provided with the base material and the above-mentioned film adhesive provided on the base material.
기재는, 다이싱 테이프여도 좋다. 또한, 본 명세서에 있어서, 기재가 다이싱 테이프인 접착 시트를 「다이싱 다이본딩 일체형 접착 시트」라고 하는 경우가 있다.A dicing tape may be sufficient as a base material. In addition, in this specification, the adhesive sheet whose base material is a dicing tape may be called "dicing die-bonding integrated adhesive sheet."
접착 시트는, 필름형 접착제의 기재와는 반대측의 면에 적층된 보호 필름을더 구비하여도 좋다.The adhesive sheet may further be equipped with the protective film laminated|stacked on the surface on the opposite side to the base material of a film adhesive.
또한, 다른 측면에 있어서, 본 발명은, 기판 상에 제1 와이어를 통해 제1 반도체 소자를 전기적으로 접속하는 와이어 본딩 공정과, 제2 반도체 소자의 편면에, 전술한 필름형 접착제를 첩부하는 라미네이트 공정과, 필름형 접착제가 첩부된 제2 반도체 소자를, 필름형 접착제를 통해 압착함으로써, 제1 와이어의 적어도 일부를 필름형 접착제에 매립하는 다이본드 공정을 구비하는, 반도체 장치의 제조 방법을 제공한다.Moreover, another aspect WHEREIN: Lamination which affixes the above-mentioned film adhesive to the wire bonding process of electrically connecting a 1st semiconductor element via a 1st wire on a board|substrate, and this invention on the single side|surface of a 2nd semiconductor element. The manufacturing method of a semiconductor device provided with a process and the die-bonding process of embedding at least a part of a 1st wire in a film adhesive by crimping|bonding the 2nd semiconductor element to which the film adhesive was affixed through the film adhesive. do.
또한, 반도체 장치는, 반도체 기판 상에 제1 와이어를 통해 제1 반도체 칩이 와이어 본딩 접속되며, 제1 반도체 칩 상에, 제2 반도체 칩이 접착 필름을 통해 압착됨으로써, 제1 와이어의 적어도 일부가 접착 필름에 매립되어 이루어지는 와이어매립형의 반도체 장치여도 좋고, 제1 와이어 및 제1 반도체 칩이 접착 필름에 매립되어 이루어지는 칩 매립형의 반도체 장치여도 좋다.Further, in the semiconductor device, a first semiconductor chip is wire-bonded on a semiconductor substrate through a first wire, and a second semiconductor chip is pressed on the first semiconductor chip through an adhesive film, whereby at least a portion of the first wire It may be a wire-embedded semiconductor device embedded in an adhesive film, or a chip-embedded semiconductor device in which a first wire and a first semiconductor chip are embedded in an adhesive film.
본 발명에 따르면, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능한 접착제 조성물이 제공된다. 그 때문에, 상기 접착제 조성물을 필름형으로 형성하여 이루어지는 필름형 접착제는, 반도체 칩 매립형 필름형 접착제인 FOD(Film Over Die) 또는 와이어 매립형 필름형 접착제인 FOW(Film Over Wire)로서 유용할 수 있다. 또한, 본 발명에 따르면, 이러한 필름형 접착제를 이용한 접착 시트 및 반도체 장치의 제조 방법이 제공된다.ADVANTAGE OF THE INVENTION According to this invention, the adhesive composition which can suppress bleed while having good embedding property at the time of thermocompression bonding is provided. Therefore, the film adhesive formed by forming the adhesive composition in a film form can be useful as FOD (Film Over Die), which is a semiconductor chip embedded film adhesive, or FOW (Film Over Wire), which is a wire embedded film adhesive. Moreover, according to this invention, the manufacturing method of the adhesive sheet and semiconductor device using such a film adhesive is provided.
도 1은 일 실시형태에 따른 필름형 접착제를 나타내는 모식 단면도이다.
도 2는 일 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다.
도 3은 다른 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다.
도 4는 일 실시형태에 따른 반도체 장치를 나타내는 모식 단면도이다.
도 5는 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 6은 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 7은 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 8은 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.
도 9는 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다.BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows the film adhesive which concerns on one Embodiment.
2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment.
3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment.
4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.
5 is a schematic cross-sectional view showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment.
6 is a schematic cross-sectional view showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment.
7 is a schematic cross-sectional view showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment.
8 is a schematic cross-sectional view showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment.
9 is a schematic cross-sectional view showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment.
이하, 도면을 적절하게 참조하면서, 본 발명의 실시형태에 대해서 설명한다. 단, 본 발명은 이하의 실시형태에 한정되는 것이 아니다.EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings suitably. However, this invention is not limited to the following embodiment.
본 명세서에 있어서, (메트)아크릴산은 아크릴산 또는 그에 대응하는 메타크릴산을 의미한다. (메트)아크릴로일기 등의 다른 유사 표현에 대해서도 동일하다.In the present specification, (meth)acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other analogous expressions such as (meth)acryloyl group.
[접착제 조성물][Adhesive composition]
본 실시형태에 따른 접착제 조성물은, (A) 열경화성 수지와, (B) 경화제와, (C) 엘라스토머를 함유한다. 접착제 조성물은, 열경화성이며, 반경화(B 스테이지) 상태를 거쳐, 경화 처리 후에 완전 경화물(C 스테이지) 상태가 될 수 있다.The adhesive composition which concerns on this embodiment contains (A) thermosetting resin, (B) hardening|curing agent, and (C) elastomer. The adhesive composition is thermosetting and can be in a fully cured product (C stage) state after a curing treatment through a semi-cured (B-stage) state.
<(A) 성분: 열경화성 수지><(A) component: thermosetting resin>
열경화성 수지는, 접착성의 관점에서, 에폭시 수지를 포함하고 있어도 좋다. 본 실시형태에 따른 접착제 조성물은, 열경화성 수지로서, (A-1) 지환식 고리를 갖는 에폭시 수지를 포함한다.The thermosetting resin may contain the epoxy resin from an adhesive viewpoint. The adhesive composition which concerns on this embodiment contains (A-1) the epoxy resin which has an alicyclic ring as a thermosetting resin.
(A-1) 성분은, 분자 내에 지환식 고리 및 에폭시기를 갖는 화합물이다. 에폭시기는, 상기 화합물의 지환식 고리 또는 지환식 고리 이외의 부위에, 단결합 또는 연결기(예컨대, 알킬렌기, 옥시알킬렌기 등)를 통해 결합하고 있어도 좋다. 또한, 상기 화합물은, 지환식 고리를 구성하는 2개의 탄소 원자와 함께 형성되는 에폭시기를 갖는 화합물(즉, 지환식 에폭시 화합물)이어도 좋다. 열경화성 수지로서 (A-1) 성분을 포함함으로써, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능해진다.(A-1) A component is a compound which has an alicyclic ring and an epoxy group in a molecule|numerator. The epoxy group may be bonded to an alicyclic ring or a site other than the alicyclic ring of the compound via a single bond or a linking group (eg, an alkylene group, an oxyalkylene group, etc.). Further, the compound may be a compound having an epoxy group formed together with two carbon atoms constituting the alicyclic ring (ie, an alicyclic epoxy compound). By including the component (A-1) as a thermosetting resin, it becomes possible to suppress bleed, having favorable embedding property at the time of thermocompression bonding.
(A-1) 성분의 에폭시 당량은, 특별히 제한되지 않지만, 90∼600 g/eq, 100∼500 g/eq, 또는 120∼450 g/eq여도 좋다. (A-1) 성분의 에폭시 당량이 이러한 범위에 있으면, 보다 양호한 반응성 및 유동성이 얻어지는 경향이 있다.(A-1) Although the epoxy equivalent in particular of a component is not restrict|limited, 90-600 g/eq, 100-500 g/eq, or 120-450 g/eq may be sufficient. (A-1) When the epoxy equivalent of a component exists in this range, there exists a tendency for more favorable reactivity and fluidity|liquidity to be acquired.
(A-1) 성분은, 예컨대, 하기 일반식 (1)∼(4)로 표시되는 에폭시 수지 중 어느 하나여도 좋다.(A-1) The component may be, for example, any one of epoxy resins represented by the following general formulas (1) - (4).
식 (1) 중, E는 지환식 고리를 나타내고, G는 단결합 또는 알킬렌기를 나타내고, R1은 각각 독립적으로 수소 원자 또는 1가의 탄화수소기를 나타낸다. n1은 1∼10의 정수를 나타내고, m은 1∼3의 정수를 나타낸다.In the formula (1), E represents an alicyclic ring, G represents a single bond or an alkylene group, and R 1 each independently represents a hydrogen atom or a monovalent hydrocarbon group. n1 represents the integer of 1-10, and m represents the integer of 1-3.
E의 탄소 원자수는, 4∼12, 5∼11, 또는 6∼10이어도 좋다. E는, 단환이어도, 다환이어도 좋지만, 다환인 것이 바람직하고, 디시클로펜타디엔 고리인 것이 보다 바람직하다. G에 있어서의 알킬렌기는, 메틸렌기, 에틸렌기, 프로필렌기, 부틸렌기, 펜틸렌기 등의 탄소수 1∼5의 알킬렌기여도 좋다. G는, 단결합인 것이 바람직하다. R1에 있어서의 1가의 탄화수소기는, 예컨대, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기 등의 알킬기, 페닐기, 나프틸기 등의 아릴기, 피리딜기 등의 헤테로아릴기여도 좋다. R1은, 수소 원자인 것이 바람직하다.The number of carbon atoms of E may be 4 to 12, 5 to 11, or 6 to 10. E may be monocyclic or polycyclic, but it is preferable that it is polycyclic, and it is more preferable that it is a dicyclopentadiene ring. The alkylene group for G may be an alkylene group having 1 to 5 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, and a pentylene group. It is preferable that G is a single bond. The monovalent hydrocarbon group for R 1 may be, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group or a pentyl group, an aryl group such as a phenyl group or a naphthyl group, or a heteroaryl group such as a pyridyl group. It is preferable that R< 1 > is a hydrogen atom.
일반식 (1)로 표시되는 에폭시 수지는, 하기 일반식 (1a)로 표시되는 에폭시 수지여도 좋다.The epoxy resin represented by the general formula (1) may be an epoxy resin represented by the following general formula (1a).
식 (1a) 중, n1은 상기와 동의이다.In formula (1a), n1 is synonymous with the above.
일반식 (1a)로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, HP-7200L, HP-7200H, HP-7200(모두 DIC 가부시키가이샤 제조), XD-1000(니혼가야쿠 가부시키가이샤 제조) 등을 들 수 있다.As a commercially available product of the epoxy resin represented by the general formula (1a), for example, HP-7200L, HP-7200H, HP-7200 (all manufactured by DIC Corporation), XD-1000 (manufactured by Nippon Chemical Co., Ltd.), etc. can be heard
식 (2) 중, R2는 2가의 탄화수소기를 나타낸다.In Formula (2), R< 2 > represents a divalent hydrocarbon group.
R2에 있어서의 2가의 탄화수소기는, 예컨대, 메틸렌기, 에틸렌기, 프로필렌기, 부틸렌기, 펜틸렌기 등의 알킬렌기, 페닐렌기, 나프틸렌기 등의 아릴렌기, 피리딜렌기 등의 헤테로아릴렌기여도 좋다. R2는, 탄소 원자수 1∼5의 알킬렌기인 것이 바람직하다.The divalent hydrocarbon group for R 2 is, for example, an alkylene group such as a methylene group, an ethylene group, a propylene group, a butylene group, or a pentylene group, an arylene group such as a phenylene group and a naphthylene group, and a heteroarylene group such as a pyridylene group. contribution is good. It is preferable that R< 2 > is a C1-C5 alkylene group.
일반식 (2)로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, 셀록사이드 2021P, 셀록사이드 2081(모두 가부시키가이샤 다이셀 제조) 등을 들 수 있다.As a commercial item of the epoxy resin represented by General formula (2), Celoxide 2021P, Celoxide 2081 (all are made by Daicel Corporation), etc. are mentioned, for example.
식 (3) 중, R3, R4 및 R5는 각각 독립적으로 2가의 탄화수소기를 나타낸다.In formula (3), R 3 , R 4 and R 5 each independently represent a divalent hydrocarbon group.
R3, R4 및 R5에 있어서의 2가의 탄화수소기로서는, R2에 있어서의 2가의 탄화수소기로 예시한 것과 동일한 것을 들 수 있다.Examples of the divalent hydrocarbon group for R 3 , R 4 , and R 5 include the same as those exemplified as the divalent hydrocarbon group for R 2 .
일반식 (3)으로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, Syna-Epoxy28(SYANASIA사 제조) 등을 들 수 있다.As a commercial item of the epoxy resin represented by General formula (3), Syna-Epoxy28 (made by SYANASIA) etc. are mentioned, for example.
식 (4) 중, R6은 수소 원자 또는 1가의 탄화수소기를 나타내고, n2는 1∼10의 정수를 나타낸다.In formula (4), R< 6 > represents a hydrogen atom or a monovalent|monohydric hydrocarbon group, and n2 represents the integer of 1-10.
R6에 있어서의 1가의 탄화수소기로서는, R1에 있어서의 1가의 탄화수소기로 예시한 것과 동일한 것을 들 수 있다.Examples of the monovalent hydrocarbon group for R 6 include the same as those exemplified as the monovalent hydrocarbon group for R 1 .
일반식 (4)로 표시되는 에폭시 수지의 시판품으로서는, 예컨대, EHPE3150(가부시키가이샤 다이셀 제조) 등을 들 수 있다.As a commercial item of the epoxy resin represented by General formula (4), EHPE3150 (made by Daicel Corporation) etc. is mentioned, for example.
(A-1) 성분은, 내열성의 관점에서, 일반식 (1)로 표시되는 에폭시 수지인 것이 바람직하고, 일반식 (1a)로 표시되는 에폭시 수지인 것이 보다 바람직하다.It is preferable that it is an epoxy resin represented by General formula (1) from a heat resistant viewpoint, and, as for (A-1) component, it is more preferable that it is an epoxy resin represented by General formula (1a).
(A-1) 성분의 함유량은, (A) 성분 전량을 기준으로 하여, 15∼100 질량%여도 좋다. (A-1) 성분의 함유량은, 40 질량% 이상, 50 질량% 이상, 또는 60 질량% 이상이어도 좋다.(A-1) Content of component may be 15-100 mass % on the basis of (A) component whole quantity. (A-1) 40 mass % or more, 50 mass % or more, or 60 mass % or more may be sufficient as content of a component.
(A-1) 성분의 함유량은, 접착제 조성물 전량을 기준으로 하여, 5 질량% 이상, 10 질량% 이상, 또는 20 질량% 이상이어도 좋다. (A-1) 성분의 함유량은, 접착제 조성물 전량을 기준으로 하여, 5 질량% 이상이면, 열 압착 시에 더욱 양호한 매립성을 가지면서, 블리드를 잘 억제할 수 있는 경향이 있다.(A-1) Content of component may be 5 mass % or more, 10 mass % or more, or 20 mass % or more on the basis of adhesive composition whole quantity. (A-1) When content of component is 5 mass % or more based on adhesive composition whole quantity as a reference, there exists a tendency which can suppress bleed well while having further favorable embedding property at the time of thermocompression bonding.
(A) 성분은, (A-1) 성분에 더하여, (A-2) 지환식 고리를 갖지 않는 방향족 에폭시 수지를 더 포함하고 있어도 좋다. 여기서, 지환식 고리를 갖지 않는 방향족 에폭시 수지는, 분자 내에 방향 고리 및 에폭시기를 가지고, 또한 지환식 고리를 갖지 않는 화합물이다. (A-2) 성분으로서는, 예컨대, 비스페놀 A형 에폭시 수지, 비스페놀 F형 에폭시 수지, 비스페놀 S형 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸노볼락형 에폭시 수지, 비스페놀 A 노볼락형 에폭시 수지, 비스페놀 F 노볼락형 에폭시 수지, 스틸벤형 에폭시 수지, 트리아진 골격 함유 에폭시 수지, 플루오렌 골격 함유 에폭시 수지, 트리페놀페놀메탄형 에폭시 수지, 비페닐형 에폭시 수지, 크실렌형 에폭시 수지, 페닐아랄킬형 에폭시 수지, 비페닐아랄킬형 에폭시 수지, 나프탈렌형 에폭시 수지, 다작용 페놀류, 안트라센 등의 다환 방향족류의 디글리시딜에테르 화합물 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, (A-2) 성분은, 25℃에서 액체여도 좋다.(A) In addition to component (A-1), component (A) may contain the aromatic epoxy resin which does not have an alicyclic ring (A-2) further. Here, the aromatic epoxy resin which does not have an alicyclic ring is a compound which has an aromatic ring and an epoxy group in a molecule|numerator, and does not have an alicyclic ring. (A-2) As a component, For example, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a bisphenol A novolak type epoxy resin, Bisphenol F novolak-type epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylene-type epoxy resin, phenylaralkyl-type epoxy The diglycidyl ether compound of polycyclic aromatics, such as resin, a biphenyl aralkyl type epoxy resin, a naphthalene type epoxy resin, polyfunctional phenols, and anthracene, etc. are mentioned. These may be used individually by 1 type or in combination of 2 or more type. Among these, (A-2) component may be liquid at 25 degreeC.
(A-2) 성분의 에폭시 당량은, 특별히 제한되지 않지만, 90∼600 g/eq, 100∼500 g/eq, 또는 120∼450 g/eq여도 좋다. (A-2) 성분의 에폭시 당량이 이러한 범위에 있으면, 보다 양호한 반응성 및 유동성이 얻어지는 경향이 있다.(A-2) Although the epoxy equivalent in particular of a component is not restrict|limited, 90-600 g/eq, 100-500 g/eq, or 120-450 g/eq may be sufficient. (A-2) When the epoxy equivalent of a component exists in this range, there exists a tendency for more favorable reactivity and fluidity|liquidity to be acquired.
(A-2) 성분의 함유량은, (A) 성분 전량을 기준으로 하여, 0∼85 질량%여도 좋다. (A-2) 성분의 함유량은, 60 질량% 이하, 50 질량% 이하, 또는 40 질량% 이하여도 좋다.(A-2) Content of component may be 0-85 mass % on the basis of (A) component whole quantity. (A-2) Content of component may be 60 mass % or less, 50 mass % or less, or 40 mass % or less.
<(B) 성분: 경화제><(B) component: curing agent>
(B) 성분은, 특별히 제한 없이, 열경화성 수지의 경화제로서 일반적으로 사용되고 있는 것을 이용할 수 있다. 열경화성 수지가 에폭시 수지를 포함하는 경우, (B) 성분으로서는, 예컨대, 페놀 수지, 에스테르 화합물, 방향족 아민, 지방족 아민, 산무수물 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, 반응성 및 경시 안정성의 관점에서, (B) 성분은 페놀 수지를 포함하고 있어도 좋다.(B) The component in particular is not restrict|limited, What is generally used as a hardening|curing agent of a thermosetting resin can be used. When a thermosetting resin contains an epoxy resin, as (B) component, a phenol resin, an ester compound, an aromatic amine, an aliphatic amine, an acid anhydride, etc. are mentioned, for example. These may be used individually by 1 type or in combination of 2 or more type. Among these, from a viewpoint of reactivity and aging stability, (B) component may contain the phenol resin.
페놀 수지는, 분자 내에 페놀성 수산기를 갖는 것이면 특별히 제한 없이 이용할 수 있다. 페놀 수지로서는, 예컨대, 페놀, 크레졸, 레조르신, 카테콜, 비스페놀 A, 비스페놀 F, 페닐페놀, 아미노페놀 등의 페놀류 및/또는 α-나프톨, β-나프톨, 디히드록시나프탈렌 등의 나프톨류와 포름알데히드 등의 알데히드기를 갖는 화합물을 산성 촉매 하에서 축합 또는 공축합시켜 얻어지는 노볼락형 페놀 수지, 알릴화비스페놀 A, 알릴화비스페놀 F, 알릴화나프탈렌디올, 페놀노볼락, 페놀 등의 페놀류 및/또는 나프톨류와 디메톡시파라크실렌 또는 비스(메톡시메틸)비페닐로부터 합성되는 페놀아랄킬 수지, 나프톨아랄킬 수지, 비페닐아랄킬형 페놀 수지, 페닐 아랄킬형 페놀 수지 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, 내열성의 관점에서, 페놀 수지는, 85℃, 85% RH의 항온 항습조에 48시간의 조건에 있어서, 흡수율이 2 질량% 이하이며, 또한 열 중량 분석계(TGA)로 측정한 350℃에서의 가열 질량 감소율(승온 속도: 5℃/min, 분위기: 질소)이 5 질량% 미만인 것이 바람직하다.A phenol resin can be used without a restriction|limiting in particular, if it has a phenolic hydroxyl group in a molecule|numerator. Examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and/or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene; Novolac-type phenol resin obtained by condensing or co-condensing a compound having an aldehyde group such as formaldehyde under an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenols such as phenol, and/or and phenol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, naphthol aralkyl resins, biphenyl aralkyl type phenol resins, and phenyl aralkyl type phenol resins. These may be used individually by 1 type or in combination of 2 or more type. Among these, from the viewpoint of heat resistance, the phenolic resin has a water absorption of 2% by mass or less in a constant temperature and humidity chamber at 85°C and 85% RH for 48 hours, and at 350°C measured by thermogravimetry (TGA). It is preferable that the heating mass decrease rate (temperature increase rate: 5°C/min, atmosphere: nitrogen) is less than 5 mass%.
페놀 수지의 시판품으로서는, 예컨대, 페놀라이트 KA 시리즈, TD 시리즈(DIC 가부시키가이샤 제조), 미렉스 XLC 시리즈, XL 시리즈(미츠이가가쿠 가부시키가이샤 제조), HE 시리즈(에어·워터 가부시키가이샤 제조) 등을 들 수 있다.As a commercial item of a phenol resin, For example, Phenolite KA series, TD series (made by DIC Corporation), Mirex XLC series, XL series (made by Mitsui Chemicals, Ltd.), HE series (made by Air Water Corporation) ) and the like.
페놀 수지의 수산기 당량은, 특별히 제한되지 않지만, 80∼400 g/eq, 90∼350 g/eq, 또는 100∼300 g/eq여도 좋다. 페놀 수지의 수산기 당량이 이러한 범위에 있으면, 더욱 양호한 반응성 및 유동성이 얻어지는 경향이 있다.Although the hydroxyl equivalent in particular of a phenol resin is not restrict|limited, 80-400 g/eq, 90-350 g/eq, or 100-300 g/eq may be sufficient. When the hydroxyl equivalent of a phenol resin exists in this range, there exists a tendency for more favorable reactivity and fluidity|liquidity to be acquired.
(A) 성분이 에폭시 수지이고, (B) 성분이 페놀 수지인 경우의 에폭시 수지의 에폭시 당량과 페놀 수지의 수산기 당량의 비(에폭시 수지의 에폭시 당량/페놀 수지의 수산기 당량)는, 경화성의 관점에서, 0.30/0.70∼0.70/0.30, 0.35/0.65∼0.65/0.35, 0.40/0.60∼0.60/0.40, 또는 0.45/0.55∼0.55/0.45여도 좋다. 상기 당량비가 0.30/0.70 이상이면, 더욱 충분한 경화성이 얻어지는 경향이 있다. 상기 당량비가 0.70/0.30 이하이면, 점도가 지나치게 높아지는 것을 막을 수 있어, 더욱 충분한 유동성을 얻을 수 있다.When the component (A) is an epoxy resin and the component (B) is a phenol resin, the ratio of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin (the epoxy equivalent of the epoxy resin / the hydroxyl equivalent of the phenol resin) is from the viewpoint of curability , 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45 may be sufficient. When the equivalence ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalence ratio is 0.70/0.30 or less, it is possible to prevent the viscosity from becoming too high, and more sufficient fluidity can be obtained.
(A) 성분 및 (B) 성분의 합계의 함유량은, 접착제 조성물 전량을 기준으로 하여, 30∼70 질량%여도 좋다. (A) 성분 및 (B) 성분의 합계의 함유량은, 33 질량% 이상, 36 질량% 이상, 또는 40 질량% 이상이어도 좋고, 65 질량% 이하, 60 질량% 이하, 또는 55 질량% 이하여도 좋다. (A) 성분 및 (B) 성분의 합계의 함유량이, 접착제 조성물 전량을 기준으로 하여, 30 질량% 이상이면, 접착성이 향상하는 경향이 있다. (A) 성분 및 (B) 성분의 합계의 함유량이, 접착제 조성물 전량을 기준으로 하여, 70 질량% 이하이면, 점도가 지나치게 낮아지는 것을 막을 수 있어, 블리드를 더욱 억제할 수 있는 경향이 있다.30-70 mass % may be sufficient as content of the sum total of (A) component and (B) component on the basis of adhesive composition whole quantity. The total content of the component (A) and the component (B) may be 33 mass% or more, 36 mass% or more, or 40 mass% or more, and may be 65 mass% or less, 60 mass% or less, or 55 mass% or less. . Adhesiveness tends to improve that content of the sum total of (A) component and (B) component is 30 mass % or more on the basis of adhesive composition whole quantity. If the total content of the component (A) and the component (B) is 70% by mass or less based on the total amount of the adhesive composition, the viscosity can be prevented from becoming too low, and bleed can be further suppressed.
<(C) 성분: 엘라스토머><(C) component: elastomer>
본 실시형태에 따른 접착제 조성물은, (C) 엘라스토머를 함유한다. (C) 성분은, 엘라스토머를 구성하는 중합체의 유리 전이 온도(Tg)가 50℃ 이하인 것이 바람직하다.The adhesive composition which concerns on this embodiment contains (C) an elastomer. (C) As for component, it is preferable that the glass transition temperature (Tg) of the polymer which comprises an elastomer is 50 degrees C or less.
(C) 성분으로서는, 예컨대, 아크릴 수지, 폴리에스테르 수지, 폴리아미드 수지, 폴리이미드 수지, 실리콘 수지, 부타디엔 수지, 아크릴로니트릴 수지 및 이들의 변성체 등을 들 수 있다.(C) As a component, an acrylic resin, a polyester resin, a polyamide resin, a polyimide resin, a silicone resin, a butadiene resin, an acrylonitrile resin, these modified bodies etc. are mentioned, for example.
(C) 성분은, 용제에의 용해성, 유동성의 관점에서, 아크릴 수지를 포함하고 있어도 좋다. 여기서, 아크릴 수지란, (메트)아크릴산에스테르에서 유래하는 구성 단위를 포함하는 폴리머를 의미한다. 아크릴 수지는, 구성 단위로서, 에폭시기, 알코올성 또는 페놀성 수산기, 카르복시기 등의 가교성 작용기를 갖는 (메트)아크릴산에스테르에서 유래하는 구성 단위를 포함하는 폴리머인 것이 바람직하다. 또한, 아크릴 수지는, (메트)아크릴산에스테르와 아크릴니트릴의 공중합체 등의 아크릴 고무여도 좋다.(C) The component may contain the acrylic resin from a viewpoint of the solubility to a solvent, and a fluidity|liquidity. Here, an acrylic resin means the polymer containing the structural unit derived from (meth)acrylic acid ester. It is preferable that an acrylic resin is a polymer containing the structural unit derived from the (meth)acrylic acid ester which has crosslinkable functional groups, such as an epoxy group, alcoholic or phenolic hydroxyl group, and a carboxy group, as a structural unit. Moreover, acrylic rubber, such as a copolymer of (meth)acrylic acid ester and acrylnitrile, may be sufficient as an acrylic resin.
아크릴 수지의 유리 전이 온도(Tg)는, -50∼50℃ 또는 -30∼30℃여도 좋다. 아크릴 수지의 Tg가 -50℃ 이상이면, 접착제 조성물의 유연성이 지나치게 높아지는 것을 막을 수 있는 경향이 있다. 이에 의해, 웨이퍼 다이싱 시에 필름형 접착제를 절단하기 쉬워져, 버어의 발생을 막는 것이 가능해진다. 아크릴 수지의 Tg가 50℃ 이하이면, 접착제 조성물의 유연성의 저하를 억제할 수 있는 경향이 있다. 이에 의해, 필름형 접착제를 웨이퍼에 접착할 때에, 보이드를 충분히 매립하기 쉬워지는 경향이 있다. 또한, 웨이퍼의 밀착성의 저하에 의한 다이싱 시의 치핑을 막는 것이 가능해진다. 여기서, 유리 전이 온도(Tg)는, DSC(열 시차 주사 열량계)(예컨대, 가부시키가이샤 리가쿠 제조 「Thermo Plus 2」)를 이용하여 측정한 값을 의미한다.The glass transition temperature (Tg) of the acrylic resin may be -50 to 50°C or -30 to 30°C. It exists in the tendency which can prevent that the softness|flexibility of an adhesive composition becomes high that Tg of an acrylic resin is -50 degreeC or more. Thereby, it becomes easy to cut|disconnect a film adhesive at the time of wafer dicing, and it becomes possible to prevent generation|occurrence|production of a burr. It exists in the tendency which can suppress the fall of the softness|flexibility of an adhesive composition that Tg of an acrylic resin is 50 degrees C or less. Thereby, when sticking a film adhesive to a wafer, there exists a tendency for a void to become fully easy to fill. Moreover, it becomes possible to prevent chipping at the time of dicing due to a decrease in the adhesion of the wafer. Here, the glass transition temperature (Tg) means a value measured using a thermal differential scanning calorimeter (DSC) (eg, "Thermo Plus 2" manufactured by Rigaku Corporation).
아크릴 수지의 중량 평균 분자량(Mw)은, 10만∼300만 또는 50만∼200만이어도 좋다. 아크릴 수지의 Mw가 이러한 범위에 있으면, 필름 형성성, 필름형에 있어서의 강도, 가요성, 태크성 등을 적절하게 제어할 수 있으며, 리플로우성이 우수하여, 매립성을 향상시킬 수 있다. 여기서, Mw는, 겔 퍼미에이션 크로마토그래피(GPC)로 측정하고, 표준 폴리스티렌에 의한 검량선을 이용하여 환산한 값을 의미한다.100,000-3 million or 500,000-2 million may be sufficient as the weight average molecular weight (Mw) of an acrylic resin. When Mw of an acrylic resin exists in such a range, film formability, the intensity|strength in a film form, flexibility, tack property, etc. can be controlled appropriately, it is excellent in reflow property, and embedding property can be improved. Here, Mw means the value measured by gel permeation chromatography (GPC) and converted using the analytical curve by standard polystyrene.
아크릴 수지의 시판품으로서는, 예컨대, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB(모두 나가세켐텍스 가부시키가이샤 제조)를 들 수 있다.Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, and HTR-860P-3CSP-3DB (all manufactured by Nagase Chemtex Corporation). ) can be mentioned.
(C) 성분의 함유량은, (A) 성분 및 (B) 성분의 총량 100 질량부에 대하여, 20∼200 질량부 또는 30∼100 질량부여도 좋다. (C) 성분의 함유량이 (A) 성분 및 (B) 성분의 총량 100 질량부에 대하여, 20 질량부 이상이면, 필름형 접착제의 취급성(예컨대 절곡성 등)이 더욱 양호해지는 경향이 있다. (C) 성분의 함유량이 (A) 성분 및 (B) 성분의 총량 100 질량부에 대하여, 200 질량부 이하이면, 접착제 조성물의 유연성이 지나치게 높아지는 것을 더욱 막을 수 있는 경향이 있다. 이에 의해, 웨이퍼 다이싱 시에 필름형 접착제를 절단하기 쉬워져, 버어의 발생을 막는 것이 한층 더 가능해지는 경향이 있다.(C) 20-200 mass parts or 30-100 mass parts may be sufficient as content of (C)component with respect to 100 mass parts of total amounts of (A) component and (B) component. (C) When content of component is 20 mass parts or more with respect to 100 mass parts of total amounts of (A) component and (B) component, there exists a tendency for the handleability (for example, bendability, etc.) of a film adhesive to become more favorable. When content of (C) component is 200 mass parts or less with respect to 100 mass parts of total amounts of (A) component and (B) component, there exists a tendency which can further prevent that the softness|flexibility of an adhesive composition becomes high too much. Thereby, it becomes easy to cut|disconnect a film adhesive at the time of wafer dicing, and it exists in the tendency which becomes further possible to prevent generation|occurrence|production of a burr.
<(D) 성분: 무기 필러><(D) component: inorganic filler>
본 실시형태에 따른 접착제 조성물은, (D) 무기 필러를 더 함유하고 있어도 좋다. 무기 필러로서는, 예컨대, 수산화알루미늄, 수산화마그네슘, 탄산칼슘, 탄산마그네슘, 규산칼슘, 규산마그네슘, 산화칼슘, 산화마그네슘, 산화알루미늄, 질화알루미늄, 붕산알루미늄 위스커, 질화붕소, 결정성 실리카, 비정성 실리카 등을 들 수 있다. 이들은 1종을 단독으로 이용하여도 좋고, 2종 이상을 조합하여 이용하여도 좋다. 얻어지는 필름형 접착제의 열 전도성이 더욱 향상하는 관점에서, 무기 필러는, 산화알루미늄, 질화알루미늄, 질화붕소, 결정성 실리카 또는 비정성 실리카를 포함하고 있어도 좋다. 또한, 접착제 조성물의 용융 점도를 조정하는 관점 및 접착제 조성물에 틱소트로픽성을 부여하는 관점에서, 무기 필러는, 수산화알루미늄, 수산화마그네슘, 탄산칼슘, 탄산마그네슘, 규산칼슘, 규산마그네슘, 산화칼슘, 산화마그네슘, 산화알루미늄, 결정성 실리카 또는 비정성 실리카를 포함하고 있어도 좋다.The adhesive composition which concerns on this embodiment may contain the (D) inorganic filler further. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica. and the like. These may be used individually by 1 type, and may be used in combination of 2 or more type. From the viewpoint of further improving the thermal conductivity of the obtained film adhesive, the inorganic filler may contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica, or amorphous silica. In addition, from the viewpoint of adjusting the melt viscosity of the adhesive composition and from the viewpoint of imparting thixotropic properties to the adhesive composition, the inorganic filler is aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, oxide Magnesium, aluminum oxide, crystalline silica, or amorphous silica may be contained.
(D) 성분의 평균 입경은, 접착성이 더욱 향상하는 관점에서, 0.005∼0.5 ㎛ 또는 0.05∼0.3 ㎛여도 좋다. 여기서, 평균 입경은, BET 비표면적으로부터 환산함으로써 구해지는 값을 의미한다.(D) The average particle diameter of component may be 0.005-0.5 micrometer or 0.05-0.3 micrometer from a viewpoint of further improving adhesiveness. Here, an average particle diameter means the value calculated|required by converting from a BET specific surface area.
(D) 성분은, 그 표면과 용제, 다른 성분 등과의 상용성, 접착 강도의 관점에서 표면 처리제에 의해 표면 처리되어 있어도 좋다. 표면 처리제로서는, 예컨대, 실란 커플링제 등을 들 수 있다. 실란 커플링제의 작용기로서는, 예컨대, 비닐기, (메트)아크릴로일기, 에폭시기, 메르캅토기, 아미노기, 디아미노기, 알콕시기, 에톡시기 등을 들 수 있다.(D) The component may be surface-treated with the surface treating agent from the viewpoint of the compatibility with the surface, a solvent, another component, and adhesive strength. As a surface treatment agent, a silane coupling agent etc. are mentioned, for example. Examples of the functional group of the silane coupling agent include a vinyl group, a (meth)acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, and an ethoxy group.
(D) 성분의 함유량은, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 10∼90 질량부 또는 10∼50 질량부여도 좋다. (D) 성분의 함유량이, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 10 질량부 이상이면, 경화 전의 접착층의 다이싱성이 향상하여, 경화 후의 접착층의 접착력이 향상하는 경향이 있다. (D) 성분의 함유량이, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 90 질량부 이하이면, 유동성의 저하를 억제할 수 있어, 경화 후의 필름형 접착제의 탄성률이 지나치게 높아지는 것을 막는 것이 가능해진다.(D) Content of component may be 10-90 mass parts or 10-50 mass parts with respect to 100 mass parts of total amounts of (A) component, (B) component, and (C)component. If the content of the component (D) is 10 parts by mass or more with respect to 100 parts by mass of the total amount of the component (A), the component (B) and the component (C), the dicing property of the adhesive layer before curing is improved, and the Adhesion tends to improve. (D) When content of component is 90 mass parts or less with respect to 100 mass parts of total amounts of (A) component, (B) component, and (C)component, a fluid fall can be suppressed, and the film adhesive after hardening. It becomes possible to prevent the elastic modulus of which becomes too high.
<(E) 성분: 경화 촉진제><(E) component: curing accelerator>
본 실시형태에 따른 접착제 조성물은, (E) 경화 촉진제를 함유하고 있어도 좋다. 경화 촉진제는, 특별히 한정되지 않고, 일반적으로 사용되는 것을 이용할 수 있다. (E) 성분으로서는, 예컨대, 이미다졸류 및 그 유도체, 유기 인계 화합물, 제2급 아민류, 제3급 아민류, 제4급 암모늄염 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중에서도, 반응성의 관점에서 (E) 성분은 이미다졸류 및 그 유도체여도 좋다.The adhesive composition which concerns on this embodiment may contain the (E) hardening accelerator. A hardening accelerator is not specifically limited, A commonly used thing can be used. (E) Examples of the component include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used individually by 1 type or in combination of 2 or more type. Among these, the imidazoles and its derivative(s) may be sufficient as (E) component from a reactive viewpoint.
이미다졸류로서는, 예컨대, 2-메틸이미다졸, 1-벤질-2-메틸이미다졸, 1-시아노에틸-2-페닐이미다졸, 1-시아노에틸-2-메틸이미다졸 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다.Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. and the like. These may be used individually by 1 type or in combination of 2 or more type.
(E) 성분의 함유량은, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 0.04∼3 질량부 또는 0.04∼0.2 질량부여도 좋다. (E) 성분의 함유량이 이러한 범위에 있으면, 경화성과 신뢰성을 양립할 수 있는 경향이 있다.(E) 0.04-3 mass parts or 0.04-0.2 mass parts may be sufficient as content of (E) component with respect to 100 mass parts of total amounts of (A) component, (B) component, and (C)component. (E) When content of a component exists in such a range, there exists a tendency for sclerosis|hardenability and reliability to be compatible.
<그 외의 성분><Other ingredients>
본 실시형태에 따른 접착제 조성물은, 그 외의 성분으로서, 항산화제, 실란 커플링제, 레올로지 컨트롤제 등을 더 함유하고 있어도 좋다. 이들 성분의 함유량은, (A) 성분, (B) 성분 및 (C) 성분의 총량 100 질량부에 대하여, 0.02∼3 질량부여도 좋다.The adhesive composition according to the present embodiment may further contain, as other components, an antioxidant, a silane coupling agent, a rheology control agent, and the like. 0.02-3 mass parts may be sufficient as content of these components with respect to 100 mass parts of total amounts of (A) component, (B) component, and (C)component.
본 실시형태에 따른 접착제 조성물은, 용제로 희석된 접착제 바니시로서 이용하여도 좋다. 용제는, (D) 성분 이외의 성분을 용해할 수 있는 것이면 특별히 제한되지 않는다. 용제로서는, 예컨대, 톨루엔, 크실렌, 메시틸렌, 쿠멘, p-시멘 등의 방향족 탄화수소; 헥산, 헵탄 등의 지방족 탄화수소; 메틸시클로헥산 등의 환상 알칸; 테트라히드로푸란, 1,4-디옥산 등의 환상 에테르; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 시클로헥사논, 4-히드록시-4-메틸-2-펜타논 등의 케톤; 아세트산메틸, 아세트산에틸, 아세트산부틸, 젖산메틸, 젖산에틸, γ-부티로락톤 등의 에스테르; 에틸렌카보네이트, 프로필렌카보네이트 등의 탄산에스테르; N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈 등의 아미드 등을 들 수 있다. 이들은, 1종을 단독으로 또는 2종 이상을 조합하여 이용하여도 좋다. 이들 중, 용제는, 용해성 및 비점의 관점에서, 톨루엔, 크실렌, 메틸에틸케톤, 메틸이소부틸케톤, 또는 시클로헥산이어도 좋다.The adhesive composition according to the present embodiment may be used as an adhesive varnish diluted with a solvent. A solvent in particular will not be restrict|limited, if it can melt|dissolve components other than (D)component. As a solvent, For example, aromatic hydrocarbons, such as toluene, xylene, mesitylene, cumene, p-cymene; aliphatic hydrocarbons such as hexane and heptane; Cyclic alkanes, such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These may be used individually by 1 type or in combination of 2 or more type. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexane from a viewpoint of solubility and a boiling point.
접착제 바니시 중의 고형 성분 농도는, 접착제 바니시의 전질량을 기준으로 하여, 10∼80 질량%여도 좋다.The solid component concentration in the adhesive varnish may be 10-80 mass % based on the total mass of the adhesive varnish.
접착제 바니시는, (A) 성분, (B) 성분, (C) 성분 및 용제와, 필요에 따라, (D) 성분, (E) 성분 및 그 외의 성분을 혼합, 혼련함으로써 조제할 수 있다. 혼합 및 혼련은, 통상의 교반기, 뢰궤기, 3본롤, 볼밀, 비드밀 등의 분산기를 적절하게, 조합하여 행할 수 있다. (D) 성분을 함유하는 경우, (D) 성분과 저분자량 성분을 미리 혼합한 후, 고분자량 성분을 배합함으로써, 혼합하는 시간을 단축할 수 있다. 또한, 접착제 바니시를 조제한 후, 진공 탈기 등에 의해 바니시 중의 기포를 제거하여도 좋다.An adhesive varnish can be prepared by mixing and kneading|mixing (A) component, (B) component, (C) component, and a solvent, and (D)component, (E) component, and other components as needed. Mixing and kneading can be performed by appropriately combining an ordinary stirrer, a powder mill, a three roll, a ball mill, a bead mill and the like, as appropriate. When (D) component is contained, time to mix can be shortened by mix|blending a high molecular weight component after mixing (D) component and a low molecular-weight component previously. Moreover, after preparing an adhesive varnish, you may remove the bubble in a varnish by vacuum deaeration etc.
[필름형 접착제][Film-type adhesive]
도 1은 일 실시형태에 따른 필름형 접착제를 나타내는 모식 단면도이다. 필름형 접착제(10)는, 전술한 접착제 조성물을 필름형으로 형성하여 이루어지는 것이다. 필름형 접착제(10)는, 반경화(B 스테이지) 상태여도 좋다. 이러한 필름형 접착제(10)는, 접착제 조성물을 지지 필름에 도포함으로써 형성할 수 있다. 접착제 바니시를 이용하는 경우는, 접착제 바니시를 지지 필름에 도포하고, 용제를 가열 건조하여 제거함으로써 필름형 접착제(10)를 형성할 수 있다.BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows the film adhesive which concerns on one Embodiment. The film adhesive 10 forms the adhesive composition mentioned above in a film form. The
지지 필름으로서는, 특별히 제한은 없고, 예컨대, 폴리테트라플루오로에틸렌, 폴리에틸렌, 폴리프로필렌, 폴리메틸펜텐 , 폴리에틸렌테레프탈레이트, 폴리이미드 등의 필름을 들 수 있다. 지지 필름의 두께는, 예컨대, 60∼200 ㎛ 또는 70∼170 ㎛여도 좋다.There is no restriction|limiting in particular as a support film, For example, films, such as polytetrafluoroethylene, polyethylene, a polypropylene, polymethylpentene, a polyethylene terephthalate, a polyimide, are mentioned. The thickness of the support film may be, for example, 60 to 200 µm or 70 to 170 µm.
접착제 바니시를 지지 필름에 도포하는 방법으로서는, 공지의 방법을 이용할 수 있고, 예컨대, 나이프 코트법, 롤 코트법, 스프레이 코트법, 그라비아 코트법, 바 코트법, 커튼 코트법 등을 들 수 있다. 가열 건조 조건은, 사용한 용제가 충분히 휘발하는 조건이면 특별히 제한은 없지만, 예컨대, 50∼200℃에서 0.1∼90분간이어도 좋다.As a method of applying the adhesive varnish to the support film, a known method can be used, and examples thereof include a knife coat method, a roll coat method, a spray coat method, a gravure coat method, a bar coat method, and a curtain coat method. Although there will be no restriction|limiting in particular as long as the heat-drying conditions are conditions in which the used solvent fully volatilizes, For example, 0.1-90 minutes may be sufficient at 50-200 degreeC.
필름형 접착제의 두께는, 용도에 맞추어, 적절하게 조정할 수 있다. 필름형 접착제의 두께는, 반도체 칩, 와이어, 기판의 배선 회로 등의 요철 등을 충분히 매립하는 관점에서, 20∼200 ㎛, 30∼200 ㎛, 또는 40∼150 ㎛여도 좋다.The thickness of a film adhesive can be suitably adjusted according to a use. 20-200 micrometers, 30-200 micrometers, or 40-150 micrometers may be sufficient as the thickness of a film adhesive from a viewpoint of fully embedding unevenness|corrugation, such as a semiconductor chip, a wire, and the wiring circuit of a board|substrate.
[접착 시트][Adhesive sheet]
도 2는 일 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다. 접착 시트(100)는, 기재(20)와 기재 상에 마련된 전술한 필름형 접착제(10)를 구비한다.2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment. The
기재(20)는, 특별히 제한되지 않지만, 기재 필름이어도 좋다. 기재 필름은, 전술한 지지 필름과 같은 것이어도 좋다.Although the base material 20 in particular is not restrict|limited, A base film may be sufficient. The base film may be the same as the support film described above.
기재(20)는, 다이싱 테이프여도 좋다. 이러한 접착 시트는, 다이싱 다이본딩 일체형 접착 시트로서 사용할 수 있다. 이 경우, 반도체 웨이퍼에의 라미네이트 공정이 1회가 되기 때문에, 작업의 효율화가 가능하다.The base material 20 may be a dicing tape. Such an adhesive sheet can be used as a dicing die-bonding integrated adhesive sheet. In this case, since the lamination process to a semiconductor wafer becomes one time, work efficiency improvement is possible.
다이싱 테이프로서는, 예컨대, 폴리테트라플루오로에틸렌 필름, 폴리에틸렌테레프탈레이트 필름, 폴리에틸렌 필름, 폴리프로필렌 필름, 폴리메틸펜텐 필름, 폴리이미드 필름 등의 플라스틱 필름 등을 들 수 있다. 또한, 다이싱 테이프는, 필요에 따라, 프라이머 도포, UV 처리, 코로나 방전 처리, 연마 처리, 에칭 처리 등의 표면 처리가 행해져 있어도 좋다. 다이싱 테이프는, 점착성을 갖는 것이 바람직하다. 이러한 다이싱 테이프는, 전술한 플라스틱 필름에 점착성을 부여한 것이어도 좋고, 전술한 플라스틱 필름의 편면에 점착제층을 마련한 것이어도 좋다.As a dicing tape, plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyimide film, etc. are mentioned, for example. In addition, the dicing tape may be surface-treated, such as primer application|coating, UV treatment, a corona discharge treatment, a grinding|polishing process, and an etching process, as needed. It is preferable that a dicing tape has adhesiveness. Such a dicing tape may be one in which adhesiveness is imparted to the above-mentioned plastic film, or one in which an adhesive layer is provided on one side of the above-mentioned plastic film.
접착 시트(100)는, 전술한 필름형 접착제를 형성하는 방법과 마찬가지로, 접착제 조성물을 기재 필름에 도포함으로써 형성할 수 있다. 접착제 조성물을 기재(20)에 도포하는 방법은, 전술한 접착제 조성물을 지지 필름에 도포하는 방법과 동일하여도 좋다.The
접착 시트(100)는, 미리 제작한 필름형 접착제를 이용하여 형성하여도 좋다. 이 경우, 접착 시트(100)는, 롤 라미네이터, 진공 라미네이터 등을 이용하여 소정 조건[예컨대, 실온(20℃) 또는 가열 상태]에서 라미네이트함으로써 형성할 수 있다. 접착 시트(100)는, 연속적으로 제조를 할 수 있어, 효율이 좋기 때문에, 가열 상태에서 롤 라미네이터를 이용하여 형성하는 것이 바람직하다.The
필름형 접착제(10)의 두께는, 반도체 칩, 와이어, 기판의 배선 회로 등의 요철 등의 매립성의 관점에서, 20∼200 ㎛, 30∼200 ㎛, 또는 40∼150 ㎛여도 좋다. 필름형 접착제(10)의 두께가 20 ㎛ 이상이면, 더욱 충분한 접착력이 얻어지는 경향이 있고, 필름형 접착제(10)의 두께가 200 ㎛ 이하이면, 경제적이고, 또한 반도체 장치의 소형화의 요구에 응하는 것이 가능해진다.The thickness of the
도 3은 다른 실시형태에 따른 접착 시트를 나타내는 모식 단면도이다. 접착 시트(110)는, 필름형 접착제(10)의 기재(20)와는 반대측의 면에 적층된 보호 필름(30)을 더 구비한다. 보호 필름(30)은, 전술한 지지 필름과 동일한 것이어도 좋다. 보호 필름의 두께는, 예컨대, 15∼200 ㎛ 또는 70∼170 ㎛여도 좋다.3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment. The
[반도체 장치][Semiconductor device]
도 4는 일 실시형태에 따른 반도체 장치를 나타내는 모식 단면도이다. 반도체 장치(200)는, 기판(14)에, 제1 와이어(88)를 통해 1단째의 제1 반도체 소자(Wa)가 와이어 본딩 접속되며, 제1 반도체 소자(Wa) 상에, 제2 반도체 소자(Waa)가 필름형 접착제(10)를 통해 압착됨으로써, 제1 와이어(88)의 적어도 일부가 필름형 접착제(10)에 매립되어 이루어지는 반도체 장치이다. 반도체 장치는, 제1 와이어(88)의 적어도 일부가 매립되어 이루어지는 와이어 매립형의 반도체 장치여도, 제1 와이어(88) 및 제1 반도체 소자(Wa)가 매립되어 이루어지는 반도체 장치여도 좋다. 또한, 반도체 장치(200)에서는, 기판(14)과 제2 반도체 소자(Waa)가 또한 제2 와이어(98)를 통해 전기적으로 접속되며, 제2 반도체 소자(Waa)가 밀봉재(42)에 의해 밀봉되어 있다.4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. In the
제1 반도체 소자(Wa)의 두께는, 10∼170 ㎛여도 좋고, 제2 반도체 소자(Waa)의 두께는, 20∼400 ㎛여도 좋다. 필름형 접착제(10) 내부에 매립되어 있는 제1 반도체 소자(Wa)는, 반도체 장치(200)를 구동하기 위한 컨트롤러 칩이다.The thickness of the first semiconductor element Wa may be 10 to 170 µm, and the thickness of the second semiconductor element Waa may be 20 to 400 µm. The first semiconductor element Wa embedded in the
기판(14)은, 표면에 회로 패턴(84, 94)이 각각 2부위씩 형성된 유기 기판(90)을 포함한다. 제1 반도체 소자(Wa)는, 회로 패턴(94) 상에 접착제(41)를 통해 압착되어 있다. 제2 반도체 소자(Waa)는, 제1 반도체 소자(Wa)가 압착되어 있지 않은 회로 패턴(94), 제1 반도체 소자(Wa) 및 회로 패턴(84)의 일부가 덮이도록 필름형 접착제(10)를 통해 기판(14)에 압착되어 있다. 기판(14) 상의 회로 패턴(84, 94)에 기인하는 요철의 단차에는, 필름형 접착제(10)가 매립되어 있다. 그리고, 수지제의 밀봉재(42)에 의해, 제2 반도체 소자(Waa), 회로 패턴(84) 및 제2 와이어(98)가 밀봉되어 있다.The
[반도체 장치의 제조 방법][Method for manufacturing semiconductor device]
본 실시형태에 따른 반도체 장치의 제조 방법은, 기판 상에 제1 와이어를 통해 제1 반도체 소자를 전기적으로 접속하는 제1 와이어 본딩 공정과, 제2 반도체 소자의 편면에, 전술한 필름형 접착제를 첩부하는 라미네이트 공정과, 필름형 접착제가 첩부된 제2 반도체 소자를, 필름형 접착제를 통해 압착함으로써, 제1 와이어의 적어도 일부를 필름형 접착제에 매립하는 다이본드 공정을 포함한다.In the manufacturing method of the semiconductor device which concerns on this embodiment, the 1st wire bonding process of electrically connecting a 1st semiconductor element via a 1st wire on a board|substrate, On one side of a 2nd semiconductor element, the above-mentioned film adhesive is applied. The lamination process to affix and the die-bonding process which embed|buries at least one part of a 1st wire in a film adhesive are included by crimping|bonding the 2nd semiconductor element to which the film adhesive was affixed through the film adhesive.
도 5∼9는 일 실시형태에 따른 반도체 장치의 제조 방법의 일련의 공정을 나타내는 모식 단면도이다. 본 실시형태에 따른 반도체 장치(200)는, 제1 와이어(88) 및 제1 반도체 소자(Wa)가 매립되어 이루어지는 반도체 장치이며, 이하의 순서에 따라 제조된다. 먼저, 도 5에 나타내는 바와 같이, 기판(14) 상의 회로 패턴(94) 상에, 접착제(41)를 갖는 제1 반도체 소자(Wa)를 압착하고, 제1 와이어(88)를 통해 기판(14) 상의 회로 패턴(84)과 제1 반도체 소자(Wa)를 전기적으로 본딩 접속한다(제1 와이어 본딩 공정).5 to 9 are schematic cross-sectional views showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment. The
다음에, 반도체 웨이퍼(예컨대, 두께 100 ㎛, 사이즈: 8인치)의 편면에, 접착 시트(100)를 라미네이트하고, 기재(20)를 박리함으로써, 반도체 웨이퍼의 편면에 필름형 접착제(10)(예컨대, 두께 110 ㎛)를 접착한다. 그리고, 필름형 접착제(10)에 다이싱 테이프를 접합한 후, 소정의 크기(예컨대, 한 변이 7.5 ㎜인 사각형)로 다이싱함으로써, 도 6에 나타내는 바와 같이, 필름형 접착제(10)가 첩부된 제2 반도체 소자(Waa)를 얻는다(라미네이트 공정).Next, the
라미네이트 공정의 온도 조건은, 50∼100℃ 또는 60∼80℃여도 좋다. 라미네이트 공정의 온도가 50℃ 이상이면, 반도체 웨이퍼와 양호한 밀착성을 얻을 수 있다. 라미네이트 공정의 온도가 100℃ 이하이면, 라미네이트 공정 중에 필름형 접착제(10)가 과도하게 유동하는 것이 억제되기 때문에, 두께의 변화 등을 야기하는 것을 방지할 수 있다.The temperature conditions of the lamination process may be 50-100 degreeC or 60-80 degreeC. A semiconductor wafer and favorable adhesiveness can be acquired that the temperature of a lamination process is 50 degreeC or more. Since it is suppressed that the film adhesive 10 flows too much during a lamination process as the temperature of a lamination process is 100 degrees C or less, it can prevent that a change of thickness etc. are caused.
다이싱 방법으로서는, 예컨대, 회전날을 이용하는 블레이드 다이싱, 레이저에 의해 필름형 접착제 또는 웨이퍼와 필름형 접착제의 양방을 절단하는 방법 등을 들 수 있다.Examples of the dicing method include blade dicing using a rotary blade, a method of cutting a film adhesive or both a wafer and a film adhesive with a laser, and the like.
그리고, 필름형 접착제(10)가 첩부된 제2 반도체 소자(Waa)를, 제1 반도체 소자(Wa)가 제1 와이어(88)를 통해 본딩 접속된 기판(14)에 압착한다. 구체적으로는, 도 7에 나타내는 바와 같이, 필름형 접착제(10)가 첩부된 제2 반도체 소자(Waa)를, 필름형 접착제(10)에 의해 제1 와이어(88) 및 제1 반도체 소자(Wa)가 덮이도록 배치하고, 계속해서, 도 8에 나타내는 바와 같이, 제2 반도체 소자(Waa)를 기판(14)에 압착시킴으로써 기판(14)에 제2 반도체 소자(Waa)를 고정한다(다이본드 공정). 다이본드 공정은, 필름형 접착제(10)를 80∼180℃, 0.01∼0.50 ㎫의 조건에서 0.5∼3.0초간 압착하는 것이 바람직하다. 다이본드 공정 후, 필름형 접착제(10)를 60∼175℃, 0.3∼0.7 ㎫의 조건에서, 5분간 이상 가압 및 가열한다.And the 2nd semiconductor element Waa to which the
계속해서, 도 9에 나타내는 바와 같이, 기판(14)과 제2 반도체 소자(Waa)를 제2 와이어(98)를 통해 전기적으로 접속한 후(제2 와이어 본딩 공정), 회로 패턴(84), 제2 와이어(98) 및 제2 반도체 소자(Waa)를 밀봉재(42)로 밀봉한다. 이러한 공정을 거침으로써 반도체 장치(200)를 제조할 수 있다.Subsequently, as shown in Fig. 9, after electrically connecting the
다른 실시형태로서, 반도체 장치는, 제1 와이어(88)의 적어도 일부가 매립되어 이루어지는 와이어 매립형의 반도체 장치여도 좋다.As another embodiment, the semiconductor device may be a wire-embedded semiconductor device in which at least a part of the
실시예Example
이하, 본 발명에 대해서 실시예를 들어 보다 구체적으로 설명한다. 단, 본 발명은 이들 실시예에 한정되는 것이 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples. However, the present invention is not limited to these Examples.
(실시예 1∼8 및 비교예 1∼4)(Examples 1 to 8 and Comparative Examples 1 to 4)
<접착 시트의 제작><Production of adhesive sheet>
이하에 나타내는 각 성분을 표 1 및 표 2에 나타낸 배합 비율(질량부)로 혼합하고, 용매로서 시클로헥사논을 이용하여 고형분 40 질량%의 접착제 조성물의 바니시를 조제하였다. 다음에, 얻어진 바니시를 100메쉬의 필터로 여과하여, 진공 탈포하였다. 진공 탈포 후의 바니시를, 기재 필름으로서, 두께 38 ㎛의 이형 처리를 실시한 폴리에틸렌테레프탈레이트(PET) 필름 상에 도포하였다. 도포한 바니시를, 90℃에서 5분간, 계속해서 140℃에서 5분간의 2단계로 가열 건조하였다. 이와 같이 하여, 기재 필름 상에, 반경화(B 스테이지) 상태에 있는 두께 110 ㎛의 필름형 접착제를 구비하는 접착 시트를 얻었다.Each component shown below was mixed at the compounding ratio (part by mass) shown in Tables 1 and 2, and the varnish of the adhesive composition of 40 mass % of solid content was prepared using cyclohexanone as a solvent. Next, the obtained varnish was filtered through a 100-mesh filter, and vacuum degassed. The varnish after vacuum defoaming was apply|coated as a base film on the polyethylene terephthalate (PET) film which performed the mold release process of 38 micrometers in thickness. The applied varnish was dried by heating at 90°C for 5 minutes and then at 140°C for 5 minutes in two steps. In this way, the adhesive sheet provided with the 110-micrometer-thick film adhesive in a semi-hardened (B stage) state on a base film was obtained.
또한, 표 1 및 표 2 중 각 성분은 이하와 같다.In addition, each component in Table 1 and Table 2 is as follows.
(A) 열경화성 수지(A) thermosetting resin
(A-1) 지환식 고리를 갖는 에폭시 수지(A-1) Epoxy resin having an alicyclic ring
A-1-1: 일반식 (1a)로 표시되는 에폭시 수지(디시클로펜타디엔 구조를 갖는 에폭시 수지), DIC 가부시키가이샤 제조, 상품명: HP-7200L, 에폭시 당량: 250∼280 g/eqA-1-1: Epoxy resin represented by general formula (1a) (epoxy resin having a dicyclopentadiene structure), manufactured by DIC Corporation, trade name: HP-7200L, epoxy equivalent: 250 to 280 g/eq
A-1-2: 일반식 (1a)로 표시되는 에폭시 수지(디시클로펜타디엔 구조를 갖는 에폭시 수지), 니혼가야쿠 가부시키가이샤 제조, 상품명: XD-1000, 에폭시 당량: 254 g/eqA-1-2: Epoxy resin represented by the general formula (1a) (epoxy resin having a dicyclopentadiene structure), manufactured by Nippon Chemical Co., Ltd., trade name: XD-1000, epoxy equivalent: 254 g/eq
A-1-3: 일반식 (2)로 표시되는 에폭시 수지(25℃에서 액체), 가부시키가이샤 다이셀 제조, 상품명: 셀록사이드 2021P, 에폭시 당량: 128∼145 g/eqA-1-3: Epoxy resin represented by general formula (2) (liquid at 25°C), manufactured by Daicel Corporation, trade name: Celoxide 2021P, epoxy equivalent: 128 to 145 g/eq
A-1-4: 일반식 (4)로 표시되는 에폭시 수지, 가부시키가이샤 다이셀 제조, 상품명: EHPE3150, 에폭시 당량: 170∼190 g/eqA-1-4: Epoxy resin represented by general formula (4), manufactured by Daicel Corporation, trade name: EHPE3150, epoxy equivalent: 170 to 190 g/eq
(A-2) 지환식 고리를 갖지 않는 방향족 에폭시 수지(A-2) Aromatic epoxy resin having no alicyclic ring
A-2-1: 다작용 방향족 에폭시 수지, 가부시키가이샤 프린테크 제조, 상품명: VG3101L, 에폭시 당량: 210 g/eqA-2-1: polyfunctional aromatic epoxy resin, manufactured by PRINTEC Co., Ltd., trade name: VG3101L, epoxy equivalent: 210 g/eq
A-2-2: 크레졸노볼락형 에폭시 수지, 신닛테츠스미킨가가쿠 가부시키가이샤 제조, 상품명: YDCN-700-10, 에폭시 당량: 209 g/eqA-2-2: cresol novolak-type epoxy resin, manufactured by Nippon-Tsui Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent: 209 g/eq
A-2-3: 비스페놀 F형 에폭시 수지(25℃에서 액체), DIC 가부시키가이샤 제조, 상품명: EXA-830CRP, 에폭시 당량: 159 g/eqA-2-3: Bisphenol F-type epoxy resin (liquid at 25°C), manufactured by DIC Corporation, trade name: EXA-830CRP, epoxy equivalent: 159 g/eq
(B) 경화제(B) curing agent
B-1: 비스페놀 A 노볼락형 페놀 수지, DIC 가부시키가이샤 제조, 상품명: LF-4871, 수산기 당량: 118 g/eqB-1: Bisphenol A novolak-type phenol resin, manufactured by DIC Corporation, trade name: LF-4871, hydroxyl equivalent: 118 g/eq
B-2: 페닐아랄킬형 페놀 수지, 미츠이가가쿠 가부시키가이샤 제조, 상품명: XLC-LL, 수산기 당량: 175 g/eqB-2: Phenyl aralkyl type phenol resin, manufactured by Mitsui Chemicals, Ltd., trade name: XLC-LL, hydroxyl equivalent: 175 g/eq
B-3: 페닐아랄킬형 페놀 수지, 에어·워터 가부시키가이샤 제조, 상품명: HE100C-30, 수산기 당량: 170 g/eqB-3: Phenyl aralkyl type phenol resin, Air Water Co., Ltd. product name: HE100C-30, hydroxyl equivalent: 170 g/eq
(C) 엘라스토머(C) elastomer
C-1: 에폭시기 함유 아크릴 수지(아크릴 고무), 나가세켐텍스 가부시키가이샤 제조, 상품명: HTR-860P, 중량 평균 분자량: 80만, 글리시딜 작용기 모노머 비율: 3%, Tg: -7℃C-1: Epoxy group-containing acrylic resin (acrylic rubber), manufactured by Nagase Chemtex Co., Ltd., trade name: HTR-860P, weight average molecular weight: 800,000, glycidyl functional group monomer ratio: 3%, Tg: -7°C
C-2: 아크릴 수지(아크릴 고무), 나가세켐텍스 가부시키가이샤 제조, 상품명: SG-70L, 중량 평균 분자량: 90만, 산가: 5 ㎎KOH/g, Tg: -13℃C-2: acrylic resin (acrylic rubber), manufactured by Nagase Chemtex Co., Ltd., trade name: SG-70L, weight average molecular weight: 900,000, acid value: 5 mgKOH/g, Tg: -13°C
(D) 무기 필러(D) inorganic filler
D-1: 실리카 필러 분산액, 용융 실리카, 가부시키가이샤 애드마텍스 제조, 상품명: SC2050-HLG, 평균 입경: 0.50 ㎛D-1: silica filler dispersion, fused silica, manufactured by Admatex, Ltd., trade name: SC2050-HLG, average particle diameter: 0.50 µm
(E) 경화 촉진제(E) curing accelerator
E-1: 1-시아노에틸-2-페닐이미다졸, 시코쿠가세이고교 가부시키가이샤 제조, 상품명: 큐어졸 2PZ-CNE-1: 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Chemical Industries, Ltd., trade name: Curesol 2PZ-CN
<각종 물성의 평가><Evaluation of various physical properties>
얻어진 접착 시트에 대해서, 매립성 및 블리드량의 평가를 행하였다.About the obtained adhesive sheet, embedding property and bleed amount were evaluated.
[매립성 평가][Evaluation of burial property]
접착 시트의 매립성을 이하의 평가 샘플을 제작하여 평가하였다. 상기에서 얻어진 필름형 접착제(두께 110 ㎛)를, 기재 필름을 벗기고, 다이싱 테이프에 첩부하여, 다이싱 다이본딩 일체형 접착 시트를 얻었다. 다음에, 두께 100 ㎛의 반도체 웨이퍼(8인치)를, 접착제측에 70℃로 가열하여 접착하였다. 그 후, 이 반도체 웨이퍼를 한 변이 7.5 ㎜인 사각형으로 다이싱함으로써, 반도체 칩 A를 얻었다. 다음에, 다이싱 다이본딩 일체형 접착 시트(히타치가세이 가부시키가이샤 제조, 상품명: HR9004-10)(두께 10 ㎛)를 준비하고, 두께 50 ㎛의 반도체 웨이퍼(8인치)에 70℃로 가열하여 첩부하였다. 그 후, 이 반도체 웨이퍼를 한 변이 4.5 ㎜인 사각형으로 다이싱함으로써, 다이본딩 필름을 갖는 반도체 칩 B를 얻었다. 계속해서, 솔더레지스트(타이요닛산 가부시키가이샤 제조, 상품명: AUS308)를 도포한 총 두께 260 ㎛의 평가용 기판을 준비하고, 다이본딩 필름을 갖는 반도체 칩 B의 다이본딩 필름과 평가용 기판의 솔더레지스트를 접하도록, 120℃, 0.20 ㎫, 2초간의 조건에서 압착하였다. 그 후, 반도체 칩 A의 필름형 접착제와 반도체 칩 B의 반도체 웨이퍼와가 접하도록, 120℃, 0.20 ㎫, 1.5초간의 조건에서 압착하여, 평가 샘플을 얻었다. 이때, 앞서 압착한 반도체 칩 B가 반도체 칩 A의 중앙이 되도록 위치 맞춤을 행하였다. 이와 같이 하여 얻어진 평가 샘플을 초음파 디지털 화상 진단 장치(인사이트 가부시키가이샤 제조, 프로브: 75 ㎒)로 보이드의 관측의 유무를 관측하고, 보이드가 관측된 경우는, 단위 면적당의 보이드의 면적의 비율을 산출하고, 이들의 분석 결과를 매립성으로서 평가하였다. 평가 기준은, 이하와 같다. 결과를 표 1 및 표 2에 나타낸다.The following evaluation samples were produced and evaluated for embedding property of an adhesive sheet. The base film was peeled off and the film adhesive (110 micrometers in thickness) obtained above was affixed on the dicing tape, and the dicing die-bonding integrated adhesive sheet was obtained. Next, a semiconductor wafer (8 inches) having a thickness of 100 mu m was attached to the adhesive side by heating at 70 DEG C. Then, the semiconductor chip A was obtained by dicing this semiconductor wafer into 7.5 mm square. Next, a dicing die-bonding integrated adhesive sheet (manufactured by Hitachi Chemical Co., Ltd., trade name: HR9004-10) (10 μm thick) was prepared, and heated to 70° C. on a 50 μm thick semiconductor wafer (8 inches). affixed. Thereafter, this semiconductor wafer was diced into a square having a side of 4.5 mm to obtain a semiconductor chip B having a die-bonding film. Next, a substrate for evaluation with a total thickness of 260 µm, coated with a solder resist (manufactured by Taiyo Nissan Corporation, trade name: AUS308), is prepared, and the die bonding film of the semiconductor chip B having the die bonding film and the substrate for evaluation are soldered. It was crimped|compressed-bonded under conditions of 120 degreeC, 0.20 MPa, and 2 second so that a resist might be contacted. Then, it crimped|bonded on 120 degreeC, 0.20 MPa, and conditions for 1.5 second so that the film adhesive of semiconductor chip A and the semiconductor wafer of semiconductor chip B might contact, and the evaluation sample was obtained. At this time, alignment was performed so that the semiconductor chip B previously crimped|compressed might become the center of the semiconductor chip A. In the evaluation sample thus obtained, the presence or absence of observation of voids was observed with an ultrasonic digital imaging apparatus (manufactured by Insight Co., Ltd., probe: 75 MHz), and when voids were observed, the ratio of the area of voids per unit area It computed and evaluated these analysis results as embedding property. Evaluation criteria are as follows. A result is shown in Table 1 and Table 2.
A: 보이드가 관측되지 않았다.A: No voids were observed.
B: 보이드가 관측되었지만, 그 비율이 5 면적% 미만이었다.B: Voids were observed, but the proportion was less than 5 area%.
C: 보이드가 관측되고, 그 비율이 5 면적% 이상이었다.C: Voids were observed and the ratio was 5 area% or more.
[블리드량 평가][Bleed amount evaluation]
상기 매립성 평가에서 제작한 평가 샘플과 동일하게 하여, 블리드량 평가의 평가 샘플을 제작하였다. 현미경을 이용하여, 평가 샘플의 4변의 중심으로부터, 필름형 접착제의 비어져 나옴량을 측장하고, 그 최대값을 블리드량으로 하였다. 결과를 표 1 및 표 2에 나타낸다.It carried out similarly to the evaluation sample produced by the said embedding evaluation, and produced the evaluation sample of bleed amount evaluation. Using the microscope, the protrusion amount of the film adhesive was measured from the center of 4 sides of an evaluation sample, and the maximum value was made into the bleed amount. A result is shown in Table 1 and Table 2.
[블리드량 평가][Bleed amount evaluation]
상기 매립성 평가에서 「A」 또는 「B」였던 것에 대해서, 블리드량 평가를 행하였다. 상기 매립성 평가에서 제작한 평가 샘플과 동일하게 하여, 블리드량 평가의 평가 샘플을 제작하였다. 현미경을 이용하여, 평가 샘플의 4변의 중심으로부터, 필름형 접착제의 비어져 나옴량을 측장하고, 그 최대값을 블리드량으로 하였다. 결과를 표 1 및 표 2에 나타낸다.About what was "A" or "B" in the said embedding evaluation, bleed amount evaluation was performed. It carried out similarly to the evaluation sample produced by the said embedding evaluation, and produced the evaluation sample of bleed amount evaluation. Using the microscope, the protrusion amount of the film adhesive was measured from the center of 4 sides of an evaluation sample, and the maximum value was made into the bleed amount. A result is shown in Table 1 and Table 2.
표 1에 나타내는 바와 같이, 지환식 고리를 갖는 에폭시 수지를 포함하는 실시예 1∼3은, 그것을 포함하지 않는 비교예 1∼3에 비해서, 양호한 매립성을 유지하면서, 블리드를 억제할 수 있었다. 또한, 표 2의 실시예 4∼8로부터, 다른 지환식 고리를 갖는 에폭시 수지를 이용한 경우에 있어서도, 동일한 경향이 있는 것이 판명되었다. 이들 결과로부터, 본 발명에 따른 접착제 조성물이, 열 압착 시에 양호한 매립성을 가지면서, 블리드를 억제하는 것이 가능한 것이 확인되었다.As shown in Table 1, Examples 1-3 containing the epoxy resin which has an alicyclic ring were able to suppress bleed, maintaining favorable embedding property compared with Comparative Examples 1-3 which do not contain it. Moreover, from Examples 4-8 of Table 2, also when the epoxy resin which has another alicyclic ring was used, it became clear that there existed a similar tendency. From these results, it was confirmed that the adhesive composition which concerns on this invention can suppress bleed, while having favorable embedding property at the time of thermocompression bonding.
이상의 결과와 같이, 본 발명에 따른 접착제 조성물은, 열 압착 시의 매립성이 양호하여, 블리드를 억제할 수 있기 때문에, 접착제 조성물을 필름형으로 형성하여 이루어지는 필름형 접착제는, 칩 매립형 필름형 접착제인 FOD(Film Over Die) 또는 와이어 매립형 필름형 접착제인 FOW(Film Over Wire)로서 유용할 수 있다.As described above, the adhesive composition according to the present invention has good embedding properties at the time of thermocompression bonding and can suppress bleed. It may be useful as FOD (Film Over Die) or FOW (Film Over Wire), which is a wire-embedded film adhesive.
10…필름형 접착제, 14…기판, 20…기재, 30…보호 필름, 41…접착제, 42…밀봉재, 84, 94…회로 패턴, 88…제1 와이어, 90…유기 기판, 98…제2 와이어, 100, 110…접착 시트, 200…반도체 장치, Wa…제1 반도체 소자, Waa…제2 반도체 소자.10… Film adhesive, 14... Substrate, 20... description, 30... protective film, 41... Adhesive, 42... sealing material, 84, 94... circuit pattern, 88... 1st wire, 90... organic substrate, 98... 2nd wire, 100, 110... Adhesive sheet, 200... Semiconductor devices, Wa… The first semiconductor element, Waa... A second semiconductor device.
Claims (12)
상기 열경화성 수지가 지환식 고리를 갖는 에폭시 수지를 포함하고,
상기 지환식 고리를 갖는 에폭시 수지가, 하기 일반식 (2)로 표시되는 에폭시 수지, 하기 일반식 (3)으로 표시되는 에폭시 수지, 및 하기 일반식 (4)로 표시되는 에폭시 수지로 이루어진 군으로부터 선택되는 적어도 1종인, 접착제 조성물.
일반식 (2)
(식 (2) 중, R2는 2가의 탄화수소기를 나타낸다.)
일반식 (3)
(식 (3) 중, R3, R4 및 R5는 각각 독립적으로 2가의 탄화수소기를 나타낸다.)
일반식 (4)
(식 (4) 중, R6은 수소 원자 또는 1가의 탄화수소기를 나타내고, n2는 1∼의 정수를 나타낸다.)A thermosetting resin, a curing agent, and an elastomer,
The thermosetting resin comprises an epoxy resin having an alicyclic ring,
The epoxy resin having an alicyclic ring is an epoxy resin represented by the following general formula (2), an epoxy resin represented by the following general formula (3), and an epoxy resin represented by the following general formula (4) from the group consisting of At least one selected from the adhesive composition.
general formula (2)
(In formula (2), R 2 represents a divalent hydrocarbon group.)
general formula (3)
(In formula (3), R 3 , R 4 and R 5 each independently represent a divalent hydrocarbon group.)
general formula (4)
(In formula (4), R 6 represents a hydrogen atom or a monovalent hydrocarbon group, and n2 represents an integer of 1 to.)
상기 기재 상에 마련된, 제8항에 기재된 필름형 접착제
를 구비하는 접착 시트.description and,
The film adhesive of Claim 8 provided on the said base material
An adhesive sheet comprising a.
제2 반도체 소자의 편면에, 제8항에 기재된 필름형 접착제를 첩부하는 라미네이트 공정과,
상기 필름형 접착제가 첩부된 제2 반도체 소자를, 상기 필름형 접착제를 통해 압착함으로써, 상기 제1 와이어의 적어도 일부를 상기 필름형 접착제에 매립하는 다이본드 공정
을 구비하는, 반도체 장치의 제조 방법.A wire bonding process of electrically connecting a first semiconductor element through a first wire on a substrate;
The lamination process of affixing the film adhesive of Claim 8 on the single side|surface of a 2nd semiconductor element;
The die-bonding process of embedding at least a part of the said 1st wire in the said film adhesive by crimping|bonding the 2nd semiconductor element to which the said film adhesive was affixed through the said film adhesive.
A method of manufacturing a semiconductor device comprising:
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