TWI774916B - Manufacturing method of semiconductor device, film-like adhesive, and adhesive sheet - Google Patents
Manufacturing method of semiconductor device, film-like adhesive, and adhesive sheet Download PDFInfo
- Publication number
- TWI774916B TWI774916B TW108103121A TW108103121A TWI774916B TW I774916 B TWI774916 B TW I774916B TW 108103121 A TW108103121 A TW 108103121A TW 108103121 A TW108103121 A TW 108103121A TW I774916 B TWI774916 B TW I774916B
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- Prior art keywords
- adhesive
- film
- semiconductor element
- component
- frequency
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- 230000001070 adhesive effect Effects 0.000 title claims abstract description 278
- 239000004065 semiconductor Substances 0.000 title claims abstract description 187
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000003475 lamination Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 35
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- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 3
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 3
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JMMZCWZIJXAGKW-UHFFFAOYSA-N 2-methylpent-2-ene Chemical compound CCC=C(C)C JMMZCWZIJXAGKW-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIYNIOYNNFXGFN-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol;7-oxabicyclo[4.1.0]heptane-4-carboxylic acid Chemical compound OCC1CCC(CO)CC1.C1C(C(=O)O)CCC2OC21.C1C(C(=O)O)CCC2OC21 NIYNIOYNNFXGFN-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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Abstract
一種半導體裝置的製造方法,其包括:將第一半導體元件經由第一線而電性連接於基板上的第一安裝步驟;於較第一半導體元件的面積更大的第二半導體元件的單面上貼附膜狀接著劑的層壓步驟;以及以膜狀接著劑覆蓋第一半導體元件的方式載置貼附有膜狀接著劑的第二半導體元件,來安裝膜狀接著劑,藉此將第一線及第一半導體元件埋入膜狀接著劑的第二安裝步驟,膜狀接著劑是於頻率79.0Hz的條件下所測定的80℃下的剪切黏度為300Pa.s以下,且當將80℃下的剪切黏度設為Y、將頻率設為X、將X與Y的關係冪近似而以Y=aXb來表示時,於雙對數圖表中繪製座標(X,Y)時的X及Y的冪近似曲線的斜率b為-0.67以下者。 A method of manufacturing a semiconductor device, comprising: a first mounting step of electrically connecting a first semiconductor element to a substrate via a first wire; and placing a single side of a second semiconductor element larger in area than the first semiconductor element a lamination step of attaching a film-like adhesive; and mounting the film-like adhesive by placing the second semiconductor element to which the film-like adhesive is applied so that the film-like adhesive covers the first semiconductor element, thereby attaching the film-like adhesive The first line and the first semiconductor element are embedded in the second mounting step of the film-like adhesive, and the film-like adhesive is measured at a frequency of 79.0Hz and has a shear viscosity of 300Pa at 80°C. s or less, and when the shear viscosity at 80°C is Y, the frequency is X, and the relation between X and Y is approximated to a power and expressed as Y= aXb , the coordinates (X) are plotted on a logarithmic graph. , Y) when the slope b of the power approximation curve of X and Y is -0.67 or less.
Description
本發明是有關於一種半導體裝置的製造方法、膜狀接著劑及接著片。 The present invention relates to a method for manufacturing a semiconductor device, a film-like adhesive, and an adhesive sheet.
隨著行動電話等的多功能化,將半導體元件積層為多段且加以高容量化的堆疊式多晶片封裝(Multi Chip Package,MCP)正在普及,於半導體元件的安裝中,廣泛使用有利於安裝步驟的膜狀接著劑來作為黏晶(die bonding)用的接著劑。作為使用此種膜狀接著劑的多段積層封裝體的一例,可列舉晶片埋入型的封裝體。其是於多段積層封裝體中,將半導體元件安裝(壓接)於最下層,並自其上方以埋入半導體元件的方式安裝(壓接)高流動的膜狀接著劑的封裝體,且搭載於行動電話、行動音訊(audio)設備用的存儲器封裝體等中。 With the multi-functionalization of mobile phones and the like, a stacked multi-chip package (MCP) in which semiconductor elements are stacked in multiple stages to increase the capacity has become popular. In the mounting of semiconductor elements, the widespread use is beneficial to the mounting procedure. The film adhesive is used as an adhesive for die bonding. As an example of a multi-stage build-up package using such a film-like adhesive, a die-embedded package can be mentioned. It is a package in which a semiconductor element is mounted (crimped) on the lowermost layer in a multi-stage laminate package, and a high-flowing film adhesive is mounted (crimped) from above to embed the semiconductor element, and is mounted It is used in memory packages for mobile phones and mobile audio (audio) devices, etc.
作為所述堆疊式MCP等半導體裝置所要求的重要特性之一,可列舉連接可靠性,為了提升連接可靠性,正在進行考量耐熱性、耐濕性、耐回流性等特性的膜狀接著劑的開發。作為此種膜狀接著劑,例如,專利文獻1中提出有一種接著片,其含有樹脂及填料,且厚度為10μm~250μm,所述樹脂包含特定的高分子量成分、及以環氧樹脂為主成分的熱硬化性成分。另外,專利文獻2中提出有一種接著劑組成物,其含有包含環氧樹脂與酚
樹脂的混合物、及丙烯酸共聚物。
One of the important properties required for semiconductor devices such as the stacked MCP is connection reliability. In order to improve connection reliability, film adhesives that consider properties such as heat resistance, moisture resistance, and reflow resistance are being developed. development. As such a film-like adhesive, for example,
半導體裝置的連接可靠性很大程度上亦取決於是否可不在接著面中產生空隙地安裝半導體元件。因此,正設法實現以可不產生空隙地安裝半導體元件的方式使用高流動的膜狀接著劑、或以可利用半導體元件的密封步驟等來消除所產生的空隙的方式使用彈性係數低的膜狀接著劑等。例如,專利文獻3中提出有一種黏度低且黏接強度低的接著片。 The connection reliability of the semiconductor device also depends largely on whether the semiconductor element can be mounted without creating voids in the bonding surface. Therefore, attempts are being made to use a film-like adhesive with a high flow rate so that the semiconductor element can be mounted without generating a void, or to use a film-like adhesive with a low elastic modulus so that the generated void can be eliminated by a sealing step of the semiconductor element or the like. agent, etc. For example, Patent Document 3 proposes an adhesive sheet with low viscosity and low adhesive strength.
專利文獻1:國際公開第2005/103180號公報 Patent Document 1: International Publication No. 2005/103180
專利文獻2:日本專利特開2002-220576號公報 Patent Document 2: Japanese Patent Laid-Open No. 2002-220576
專利文獻3:日本專利特開2009-120830號公報 Patent Document 3: Japanese Patent Laid-Open No. 2009-120830
所述專利文獻1及專利文獻3的接著膜等中,於安裝時埋入晶片(半導體元件),因而以高流動化為目的而包含大量環氧樹脂等。因此,藉由半導體裝置的製造步驟中產生的熱而進行熱硬化,接著膜高彈性化,因而有時於密封時的高溫.高壓條件下接著膜亦不變形,安裝時所形成的空隙最終亦不消失。另一方面,所述專利文獻2的接著膜等的彈性係數低,因而雖然可於密封步驟中使空隙消失,但安裝後樹脂自晶片端部的露出(滲出)增多,而擔心會污染晶片周邊的封裝體部分。以下針對該些課題進行更詳細
的說明。
In the adhesive films of
近年來,晶片埋入型半導體裝置的動作的高速化受到重視。先前,將控制半導體裝置的動作的控制器晶片(controller chip)配置於積層的半導體元件的最上段,但為了實現動作的高速化,正在開發於最下段配置控制器晶片的半導體裝置的封裝技術。作為此種封裝的形態之一,使積層為多段的半導體元件中,安裝第二段的半導體元件時所使用的膜狀接著劑較厚,而於該膜狀接著劑內部埋入控制器晶片的封裝體受到矚目。對於用於此種用途的膜狀接著劑而言,要求可埋入控制器晶片及連接於控制器晶片的線、因基板表面的凹凸而產生的階差的高流動性,藉由使用如專利文獻2的接著片般的高流動的膜,而可解決該些課題。 In recent years, attention has been paid to speeding up the operation of wafer-embedded semiconductor devices. Conventionally, a controller chip that controls the operation of a semiconductor device has been placed on the uppermost stage of a stacked semiconductor element. However, in order to speed up the operation, a packaging technology for a semiconductor device in which the controller chip is placed on the lowermost stage is being developed. As one form of this type of packaging, the film-like adhesive used for mounting the second-stage semiconductor element in the multilayered semiconductor element is thicker, and the controller chip is embedded in the film-like adhesive. The package has attracted attention. Film adhesives used for such applications are required to have high fluidity capable of burying the controller chip and wires connected to the controller chip, and the level difference caused by the unevenness of the substrate surface. The adhesive sheet-like high-flow film of Document 2 can solve these problems.
然而,此處的問題在於,使用高流動的樹脂的情況下,樹脂自晶片端部的外滲(滲出)增多。尤其是晶片埋入型半導體裝置中,為了實現埋入而將膜狀接著劑加厚,並且為了將埋入的晶片的體積量排除,滲出量更加顯著。於晶片的周邊形成有用於連接線的墊及電路,若滲出量多,則擔心會污染包含該些的封裝體表面。因此,對於膜狀接著劑,要求用於埋入控制器晶片及線的高流動性,另一方面,為了抑制滲出而要求確保流動性低。 However, the problem here is that when a resin with high flow is used, extravasation (bleeding) of the resin from the wafer edge increases. In particular, in a wafer-embedded type semiconductor device, the film-like adhesive is thickened in order to realize embedding, and the amount of bleeding becomes more significant in order to remove the volume of the embedded wafer. Pads and circuits for connecting wires are formed on the periphery of the chip, and if the amount of seepage is large, there is a fear that the surface of the package including these will be contaminated. Therefore, the film adhesive is required to have high fluidity for embedding controller wafers and wires, and on the other hand, it is required to ensure low fluidity in order to suppress bleeding.
本發明是鑒於所述情況而成者,其目的在於提供一種可兼具良好的晶片埋入性與低滲出性的半導體裝置的製造方法。另外,本發明的目的在於提供一種所述製造方法中可使用的膜狀接著劑、及使用其的切割.黏晶一體型接著片。 The present invention has been made in view of the above-mentioned circumstances, and an object thereof is to provide a method of manufacturing a semiconductor device which can have both good wafer embedding properties and low exudation properties. Moreover, the objective of this invention is to provide the film-like adhesive which can be used in the said manufacturing method, and the dicing using the same. Bonded die-integrated adhesive.
為解決所述課題,本發明者等人對製造半導體裝置時所使用的膜狀接著劑的物性的調整反覆進行努力研究。並且,本發明者等人發現,藉由使用特定頻率下的剪切黏度為特定的範圍、且剪切黏度與頻率滿足特定的關係的膜狀接著劑,而可實現兼具良好的晶片埋入性與低滲出性。 In order to solve the above-mentioned problems, the inventors of the present invention have repeatedly studied the adjustment of the physical properties of the film-like adhesive used in the manufacture of semiconductor devices. Furthermore, the inventors of the present invention found that by using a film adhesive whose shear viscosity at a specific frequency is in a specific range and satisfies a specific relationship between shear viscosity and frequency, it is possible to realize both good wafer embedding sex and low exudation.
即,為解決所述課題,本發明提供一種半導體裝置的製造方法,其包括:第一安裝步驟,將第一半導體元件經由第一線而電性連接於基板上;層壓步驟,於較所述第一半導體元件的面積更大的第二半導體元件的單面上貼附膜狀接著劑;以及第二安裝步驟,以所述膜狀接著劑覆蓋所述第一半導體元件的方式載置貼附有所述膜狀接著劑的第二半導體元件,來安裝所述膜狀接著劑,藉此將所述第一線及所述第一半導體元件埋入所述膜狀接著劑,所述膜狀接著劑是於頻率79.0Hz的條件下所測定的80℃下的剪切黏度為300Pa.s以下,且當將於頻率0.1Hz、1.0Hz、10.0Hz及79.0Hz的條件下所測定的80℃下的剪切黏度設為Y(Pa.s)、將頻率設為X(Hz)、將X與Y的關係冪近似而以Y=aXb來表示時,於雙對數圖表中繪製座標(X,Y)時的X及Y的冪近似曲線的斜率b為-0.67以下者。 That is, in order to solve the above-mentioned problems, the present invention provides a method of manufacturing a semiconductor device, comprising: a first mounting step of electrically connecting a first semiconductor element to a substrate via a first wire; and a lamination step of A film-like adhesive is attached to one side of a second semiconductor element having a larger area of the first semiconductor element; and in a second mounting step, the film-like adhesive is placed so as to cover the first semiconductor element. The second semiconductor element with the film-like adhesive is attached, and the film-like adhesive is mounted, whereby the first wire and the first semiconductor element are embedded in the film-like adhesive, and the film The shear viscosity of the adhesive is 300Pa at 80°C measured at a frequency of 79.0Hz. s or less, and when the shear viscosity at 80°C measured at frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz is Y (Pa·s), and the frequency is X (Hz), When the relationship between X and Y is approximated to a power and expressed as Y=aXb, the slope b of the power approximation curve of X and Y when the coordinates (X, Y) are plotted on a logarithmic graph is -0.67 or less.
根據所述半導體裝置的製造方法,藉由使為了將第二半導體元件安裝(壓接)於第一半導體元件之上而使用的膜狀接著劑的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度為300 Pa.s以下,而可在抑制空隙的產生的同時利用膜狀接著劑來埋入第一半導體元件及第一線。另外,藉由膜狀接著劑的由頻率與剪切黏度的關係所求出的所述斜率b為-0.67以下,而可抑制膜狀接著劑自第二半導體元件的端部的露出(滲出)。藉此而可獲得晶片埋入性良好且抑制滲出的半導體裝置。 According to the method of manufacturing a semiconductor device, 80° C. measured under the condition of a frequency of 79.0 Hz with the film-like adhesive used for mounting (pressure-bonding) the second semiconductor element on the first semiconductor element The shear viscosity at 300 Pa. s or less, the first semiconductor element and the first wire can be embedded with the film-like adhesive while suppressing the generation of voids. In addition, when the slope b obtained from the relationship between the frequency and the shear viscosity of the film adhesive is -0.67 or less, the exposure (bleed-out) of the film adhesive from the end of the second semiconductor element can be suppressed. . As a result, a semiconductor device having good wafer embedding properties and suppressed bleeding can be obtained.
另外,如所述專利文獻1及專利文獻3所記載般的接著膜中,熱硬化時彈性係數急劇上升,因而安裝時施加至晶片的應力無法充分釋放,有時亦導致晶片連同接著膜一起翹曲的被稱為晶片翹曲的現象。對此,根據本發明的半導體裝置的製造方法,藉由使用滿足以上所述的條件的膜狀接著劑,膜狀接著劑中不易殘存應力,亦可抑制晶片翹曲。
In addition, in the adhesive films described in
本發明中,所述膜狀接著劑較佳為於頻率0.1Hz的條件下所測定的80℃下的剪切黏度為25000Pa.s以上。藉由頻率0.1Hz下的剪切黏度為25000Pa.s以上,而可更進一步抑制膜狀接著劑自第二半導體元件的端部的露出(滲出)。 In the present invention, the film adhesive preferably has a shear viscosity of 25000Pa at 80°C measured under the condition of a frequency of 0.1Hz. s or more. The shear viscosity at a frequency of 0.1Hz is 25000Pa. s or more, the exposure (bleeding) of the film-like adhesive from the end portion of the second semiconductor element can be further suppressed.
本發明中,所述膜狀接著劑較佳為包含25℃下為液狀的環氧樹脂作為熱硬化性成分。藉此,晶片埋入性容易進一步提升。 In this invention, it is preferable that the said film adhesive contains the epoxy resin which is liquid at 25 degreeC as a thermosetting component. Thereby, it is easy to further improve the embeddedness of the chip.
本發明中,所述膜狀接著劑較佳為包含熱塑性成分。藉此,晶片埋入性容易進一步提升。 In the present invention, the film-like adhesive preferably contains a thermoplastic component. Thereby, it is easy to further improve the embeddedness of the chip.
本發明中,所述膜狀接著劑較佳為包含無機填料。藉此,膜狀接著劑的操作性等提升,並且可更進一步抑制膜狀接著劑自第二半導體元件的端部的露出(滲出)。 In the present invention, the film-like adhesive preferably contains an inorganic filler. Thereby, the handleability and the like of the film-like adhesive are improved, and the exposure (bleed-out) of the film-like adhesive from the end portion of the second semiconductor element can be further suppressed.
另外,本發明提供一種膜狀接著劑,其於第一半導體元件經由第一線而電性連接於基板上,並且於所述第一半導體元件上安裝較所述第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中,用於安裝所述第二半導體元件並且埋入所述第一線及所述第一半導體元件,而且於頻率79.0Hz的條件下所測定的80℃下的剪切黏度為300Pa.s以下,且當將於頻率0.1Hz、1.0Hz、10.0Hz及79.0Hz的條件下所測定的80℃下的剪切黏度設為Y(Pa.s)、將頻率設為X(Hz)、將X與Y的關係冪近似而以Y=aXb來表示時,於雙對數圖表中繪製座標(X,Y)時的X及Y的冪近似曲線的斜率b為-0.67以下。 In addition, the present invention provides a film-like adhesive, which is electrically connected to a substrate through a first line on a first semiconductor element, and which is mounted on the first semiconductor element in a larger area than the first semiconductor element In a semiconductor device made of a second semiconductor element, the second semiconductor element is mounted and the first wire and the first semiconductor element are embedded, and 80°C measured at a frequency of 79.0 Hz Under the shear viscosity of 300Pa. s or less, and when the shear viscosity at 80°C measured at frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz is Y (Pa·s), and the frequency is X (Hz), When the relationship between X and Y is approximated to a power and expressed as Y=aX b , the slope b of the power approximation curve of X and Y when the coordinates (X, Y) are plotted on a logarithmic graph is -0.67 or less.
根據本發明的膜狀接著劑,能夠獲得晶片埋入性良好且抑制滲出的半導體裝置。另外,根據本發明的膜狀接著劑,能夠獲得抑制晶片翹曲的半導體裝置。 According to the film adhesive of the present invention, it is possible to obtain a semiconductor device having good wafer embedding properties and suppressing bleeding. Moreover, according to the film-like adhesive of this invention, the semiconductor device which suppressed the warpage of a wafer can be obtained.
本發明的膜狀接著劑較佳為於頻率0.1Hz的條件下所測定的80℃下的剪切黏度為25000Pa.s以上。 The film adhesive of the present invention preferably has a shear viscosity of 25000Pa at 80°C measured under the condition of a frequency of 0.1Hz. s or more.
本發明的膜狀接著劑較佳為包含25℃下為液狀的環氧樹脂作為熱硬化性成分。 The film adhesive of the present invention preferably contains a liquid epoxy resin at 25° C. as a thermosetting component.
本發明的膜狀接著劑較佳為包含熱塑性成分。 The film adhesive of the present invention preferably contains a thermoplastic component.
本發明的膜狀接著劑較佳為包含無機填料。 The film adhesive of the present invention preferably contains an inorganic filler.
進而,本發明提供一種將所述本發明的膜狀接著劑積層於切割帶上的切割.黏晶一體型接著片。 Furthermore, the present invention provides a dicing in which the film adhesive of the present invention is laminated on a dicing tape. Bonded die-integrated adhesive.
根據本發明的切割.黏晶一體型接著片,能夠獲得晶片埋 入性良好且抑制滲出的半導體裝置。另外,根據本發明的切割.黏晶一體型接著片,能夠獲得抑制晶片翹曲的半導體裝置。 Cutting according to the present invention. Bonded die-integrated wafer, which can obtain wafer buried A semiconductor device with good ingress and suppression of exudation. In addition, according to the cutting of the present invention. The die-bonding integrated adhesive sheet can obtain a semiconductor device in which warpage of the wafer is suppressed.
本發明的切割.黏晶一體型接著片中,所述膜狀接著劑的厚度較佳為20μm~200μm。為了利用膜狀接著劑來充分埋入第一半導體元件、第一線、及基板的配線電路等的凹凸而需要足夠的厚度,但為了減少滲出,較佳為膜狀接著劑薄,因而就兼具該等的觀點而言,膜狀接著劑的厚度理想為所述範圍內。 Cutting of the present invention. In the die-bonding integrated adhesive sheet, the thickness of the film adhesive is preferably 20 μm˜200 μm. In order to fully embed the first semiconductor element, the first line, and the unevenness of the wiring circuit of the substrate with the film-like adhesive, a sufficient thickness is required. However, in order to reduce bleeding, the film-like adhesive is preferably thin, so both From these viewpoints, the thickness of the film-like adhesive is desirably within the above-mentioned range.
本發明的切割.黏晶一體型接著片較佳為具有設置於所述膜狀接著劑的與設置有所述切割帶的面為相反側的面上的覆蓋膜。藉由具有覆蓋膜,而可保護膜狀接著劑。 Cutting of the present invention. The die-bonding integrated adhesive sheet preferably has a cover film provided on the surface opposite to the surface on which the dicing tape of the film-like adhesive is provided. The film adhesive can be protected by having a cover film.
根據本發明,可提供一種可兼具良好的晶片埋入性與低滲出性的半導體裝置的製造方法。另外,本發明可提供一種所述製造方法中可使用的膜狀接著劑、及使用其的切割.黏晶一體型接著片。 ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor device which can combine favorable wafer embedding property and low exudation property can be provided. In addition, the present invention can provide a film-like adhesive that can be used in the production method, and cutting using the same. Bonded die-integrated adhesive.
10:膜狀接著劑 10: Film adhesive
14:基板 14: Substrate
20:基材膜 20: substrate film
30:覆蓋膜 30: cover film
40:基材膜 40: substrate film
41:接著劑 41: Adhesive
42:樹脂(密封材) 42: Resin (sealing material)
50:黏著劑層 50: Adhesive layer
60:切割帶 60: cutting tape
84、94:電路圖案 84, 94: circuit pattern
88:第一線 88: First Line
90:有機基板 90: Organic substrate
98:第二線 98: Second line
100、110、120、130:接著片 100, 110, 120, 130: After the film
200:半導體裝置 200: Semiconductor Devices
Wa:第一半導體元件 Wa: first semiconductor element
Waa:第二半導體元件 Waa: Second semiconductor element
圖1是表示本發明的實施形態的膜狀接著劑的圖。 FIG. 1 is a view showing a film-like adhesive according to an embodiment of the present invention.
圖2是表示本發明的實施形態的接著片的圖。 Fig. 2 is a view showing an adhesive sheet according to an embodiment of the present invention.
圖3是表示本發明的另一實施形態的接著片的圖。 Fig. 3 is a view showing an adhesive sheet according to another embodiment of the present invention.
圖4是表示本發明的又一實施形態的切割.黏晶一體型接著片的圖。 Fig. 4 is a cut showing another embodiment of the present invention. A diagram of a sticky die-integrated bond.
圖5是表示本發明的又一實施形態的切割.黏晶一體型接著片的圖。 Fig. 5 is a cut showing another embodiment of the present invention. A diagram of a sticky die-integrated bond.
圖6是表示半導體裝置的圖。 FIG. 6 is a diagram showing a semiconductor device.
圖7是表示本發明的實施形態的半導體裝置的製造方法的圖。 FIG. 7 is a diagram showing a method of manufacturing the semiconductor device according to the embodiment of the present invention.
圖8是表示圖7的後續步驟的圖。 FIG. 8 is a diagram showing the subsequent steps of FIG. 7 .
圖9是表示圖8的後續步驟的圖。 FIG. 9 is a diagram showing the subsequent steps of FIG. 8 .
圖10是表示圖9的後續步驟的圖。 FIG. 10 is a diagram showing the subsequent steps of FIG. 9 .
圖11是表示圖10的後續步驟的圖。 FIG. 11 is a diagram showing the subsequent steps of FIG. 10 .
圖12是表示實施例1及比較例1的膜狀接著劑的剪切黏度(Y)與頻率(X)的關係的雙對數圖表。 12 is a logarithmic graph showing the relationship between the shear viscosity (Y) and the frequency (X) of the film adhesives of Example 1 and Comparative Example 1. FIG.
圖13是觀察使用實施例4、比較例1及比較例5的膜狀接著劑的評價樣品中的空隙(孔隙)的產生狀態而得的超音波診斷圖像。 13 is an ultrasonic diagnostic image obtained by observing the generation state of voids (voids) in the evaluation samples using the film adhesives of Example 4, Comparative Example 1, and Comparative Example 5. FIG.
以下,參照圖式來對本發明的較佳實施形態進行詳細說明。於以下的說明中,對相同或相當部分標註相同符號,並省略重複的說明。另外,上下左右等位置關係只要無特別說明,則是指基於圖式所示的位置關係者。進而,圖式的尺寸比率並不限於圖示的比率。再者,所謂本說明書中的「(甲基)丙烯酸」是指「丙烯酸」及與其相對應的「甲基丙烯酸」。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same code|symbol is attached|subjected to the same or an equivalent part, and the repeated description is abbreviate|omitted. In addition, the positional relationship, such as up-down, left-right, etc., refers to the one based on the positional relationship shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown in the drawings. In addition, "(meth)acrylic acid" in this specification means "acrylic acid" and "methacrylic acid" corresponding to it.
(膜狀接著劑) (Film Adhesive)
圖1是示意性表示本實施形態的膜狀接著劑10的剖面圖。膜狀接著劑10為熱硬化性,且是將經過半硬化(B階段)狀態,而於硬化處理後可呈完全硬化物(C階段)狀態的接著劑組成物成形為膜狀而成者。
FIG. 1 is a cross-sectional view schematically showing a
膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度為300Pa.s以下。於頻率79.0Hz的條件下所測定的80℃下的剪切黏度會影響利用膜狀接著劑10來埋入控制器晶片等半導體元件及線時的埋入性,藉由該值為300Pa.s以下,而可獲得充分埋入半導體元件及線的程度的低彈性,可獲得良好的晶片埋入性。就進一步提升晶片埋入性的觀點而言,於頻率79.0Hz的條件下所測定的80℃下的膜狀接著劑10的剪切黏度較佳為295Pa.s以下,更佳為290Pa.s以下,進而佳為285Pa.s以下。另外,就進一步減少樹脂自晶片端部的外滲(滲出)的觀點而言,於頻率79.0Hz的條件下所測定的80℃下的膜狀接著劑10的剪切黏度可為200Pa.s以上,亦可為230Pa.s以上,亦可為250Pa.s以上。
The shear viscosity at 80° C. of the film adhesive 10 measured under the condition of a frequency of 79.0 Hz was 300 Pa. s or less. The shear viscosity at 80° C. measured at a frequency of 79.0 Hz affects the embedment of semiconductor elements and wires such as controller chips by using the film-
膜狀接著劑10中,當將於頻率0.1Hz、1.0Hz、10.0Hz及79.0Hz的條件下所測定的80℃下的剪切黏度設為Y(Pa.s)、將頻率設為X(Hz)、將X與Y的關係冪近似而以Y=aXb來表示時,於雙對數圖表中繪製座標(X,Y)時的X及Y的冪近似曲線的斜率b為-0.67以下。斜率b表示剪切黏度的頻率依存性的高低,其值越小(絕對值大),則頻率依存性越高,相對較高的頻率下的剪切黏度與相對較低的頻率下的剪切黏度的差越大。並且,藉由
該斜率b為-0.67以下,則可降低進行加熱加壓而埋入半導體元件及線的瞬間的膜狀接著劑10的剪切黏度,並且使自埋入後至冷卻為止期間的剪切黏度相對而言大,從而可抑制於埋入後樹脂流動。其結果,可減少樹脂自晶片端部的外滲(滲出)。就進一步降低滲出的觀點而言,斜率b較佳為-0.68以下,更佳為-0.69以下,進而佳為-0.70以下。另外,就不損及膜形成性及操作性的觀點而言,斜率b可為-0.80以上。
In the
就進一步減少樹脂自晶片端部的外滲(滲出)的觀點而言,膜狀接著劑10較佳為於頻率0.1Hz的條件下所測定的80℃下的剪切黏度為25000Pa.s以上,更佳為27000Pa.s以上,進而佳為29000Pa.s以上,特佳為30000Pa.s以上。另外,就膜形成性及切割等加工性的觀點而言,於頻率0.1Hz的條件下所測定的80℃下的剪切黏度較佳為50000Pa.s以下,更佳為40000Pa.s以下,進而佳為35000Pa.s以下。 From the viewpoint of further reducing the extravasation (bleeding) of the resin from the wafer end, the film adhesive 10 preferably has a shear viscosity of 25000Pa at 80°C measured under the condition of a frequency of 0.1Hz. s above, more preferably 27000Pa. s above, and more preferably 29000Pa. s or more, the best is 30000Pa. s or more. In addition, the shear viscosity at 80° C. measured under the condition of a frequency of 0.1 Hz is preferably 50000 Pa from the viewpoint of film formability and processability such as cutting. s or less, more preferably 40000Pa. s or less, more preferably 35000Pa. s or less.
在欲降低膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度的情況下,例如可藉由增加後述的(a1)成分的含量、增加(b1)成分的含量並減少(b2)成分的含量、及減少(c)成分的含量或減小粒徑等方法進行調整。另外,在欲提高膜狀接著劑10的於頻率0.1Hz的條件下所測定的80℃下的剪切黏度的情況下,例如可藉由增加後述的(a2)成分的量、增加(c)成分的含量、增加(b2)成分的分子量等方法進行調整。再者,除所述方法以外,膜狀接著劑10的於頻率79.0Hz及頻率
0.1Hz的條件下所測定的80℃下的剪切黏度亦能夠藉由調整後述的(a)成分~(e)成分的種類及量來進行調整。
In the case of reducing the shear viscosity at 80° C. measured under the condition of a frequency of 79.0 Hz of the
在欲降低斜率b的情況下,若為以上所述的調整頻率79.0Hz或頻率0.1Hz下的剪切黏度的方法,則亦存在難以調整的情況。在欲降低斜率b的情況下,例如可列舉調整後述的(a2)成分的環氧樹脂的環氧當量或酚樹脂的羥基當量的方法。藉由減小(a2)成分的環氧樹脂的環氧當量或酚樹脂的羥基當量,而有可提高膜狀接著劑10的剪切黏度的頻率依存性,進一步減小斜率b的傾向。再者,除所述方法以外,斜率b亦能夠藉由調整後述的(a)成分~(e)成分的種類及量來進行調整。 In the case where the slope b is to be lowered, the above-described method of adjusting the shear viscosity at a frequency of 79.0 Hz or a frequency of 0.1 Hz may also be difficult to adjust. When the inclination b is to be lowered, for example, a method of adjusting the epoxy equivalent of the epoxy resin of the component (a2) described later or the hydroxyl equivalent of the phenol resin can be mentioned. By reducing the epoxy equivalent of the epoxy resin of the component (a2) or the hydroxyl equivalent of the phenol resin, the frequency dependence of the shear viscosity of the film adhesive 10 can be improved, and the slope b tends to be further reduced. In addition, in addition to the said method, the slope b can also be adjusted by adjusting the kind and amount of (a) component - (e) component mentioned later.
膜狀接著劑10的剪切黏度可使用動態黏彈性裝置(例如TA儀器公司製造的商品名「ARES」等),一邊對保持為80℃的膜狀接著劑10賦予5%的應變一邊調整頻率來進行測定。更具體而言,可於動態黏彈性裝置上安置例如直徑8mm的平行錐板夾具,並於其中安置膜狀接著劑10的測定用樣品,對測定用樣品,一邊於80℃下賦予5%的應變一邊以離散模式(discrete mode)使頻率變化為0.1Hz、1.0Hz、10.0Hz、79.0Hz,測定各個頻率的剪切黏度。用作測定用樣品的膜狀接著劑10的厚度例如可設為440μm。用作測定用樣品的膜狀接著劑10為硬化前的狀態(未硬化狀態),例如呈半硬化(B階段)狀態。再者,平行錐板夾具的直徑及測定用樣品的厚度等條件並不限定於以上所述的條件,亦可設為不同的條件。藉由將該些條件作為測定參數預先輸入至測
定裝置中,而可獲得修正了其影響的測定結果,因而即便改變條件,亦可以修正過的測定結果的形式獲得相同的值。
The shear viscosity of the film-
斜率b可作為將剪切黏度設為Y(Pa.s)、將頻率設為X(Hz),根據利用所述方法所測定出的各頻率的剪切黏度,將X與Y的關係冪近似而以Y=aXb來表示時的b的值求出。再者,所述冪近似式中,a及b為常數,b表示於雙對數圖表中繪製座標(X,Y)時的X及Y的冪近似曲線的斜率。 The slope b can be approximated by using the shear viscosity as Y (Pa.s) and the frequency as X (Hz), based on the shear viscosity at each frequency measured by the method described above, by approximating the relation between X and Y to a power On the other hand, the value of b when expressed by Y=aX b is obtained. In addition, in the power approximation formula, a and b are constants, and b represents the slope of the power approximation curve of X and Y when the coordinates (X, Y) are plotted on the logarithmic graph.
另外,膜狀接著劑10較佳為對塗佈有AUS308的基板的硬化後的接著力為1.0MPa以上。該情況下,所獲得的半導體裝置的連接可靠性更良好。
Moreover, it is preferable that the adhesive force after hardening with respect to the board|substrate which apply|coated AUS308 to the
為了將塗佈有AUS308的基板與硬化後的膜狀接著劑10的接著力設為1.0MPa以上,例如可藉由減少後述的(a2)成分的量、增加(c)無機填料的含量來進行調整。另外,就獲得充分的接著性的觀點而言,較佳為添加後述的偶合劑等。 In order to set the adhesive force between the substrate coated with AUS308 and the cured film adhesive 10 to 1.0 MPa or more, for example, it can be performed by reducing the amount of the component (a2) described later and increasing the content of the inorganic filler (c). Adjustment. In addition, from the viewpoint of obtaining sufficient adhesiveness, it is preferable to add a coupling agent or the like described later.
膜狀接著劑10的含有成分並無特別限定,例如可包含:(a)熱硬化性成分、(b)熱塑性成分、(c)無機填料、(d)硬化促進劑、(e)其他成分等。藉由調整該些(a)成分~(e)成分的種類及量,而可調整膜狀接著劑10的特性。
The components contained in the film-
(a)熱硬化性成分 (a) Thermosetting component
作為熱硬化性成分,可列舉熱硬化性樹脂。尤其就安裝半導體元件時所要求的耐熱性及耐濕性的觀點而言,作為熱硬化性成分,較佳為環氧樹脂、酚樹脂等。 As a thermosetting component, thermosetting resin is mentioned. In particular, from the viewpoint of heat resistance and moisture resistance required when mounting a semiconductor element, epoxy resins, phenol resins, and the like are preferable as thermosetting components.
作為環氧樹脂及酚樹脂,例如可列舉(a1)軟化點為60℃以下或常溫(25℃)下為液狀者,只要為加以硬化而具有接著作用者則並無特別限定。作為符合此種(a1)成分的環氧樹脂,可列舉使雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚E型環氧樹脂等改質而成的二官能環氧樹脂等。另外,作為符合(a1)成分的酚樹脂,可列舉艾迪科(ADEKA)(股)製造的EP-4088、大賽璐(Daicel)(股)製造的賽羅西德(CELLOXIDE)2021P等。 Examples of epoxy resins and phenol resins include (a1) those having a softening point of 60° C. or lower or those in a liquid state at normal temperature (25° C.), but are not particularly limited as long as they have an adhesive effect for curing. Examples of epoxy resins conforming to the component (a1) include bifunctional epoxy resins obtained by modifying bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol E type epoxy resins, and the like. Wait. Moreover, EP-4088 by ADEKA Co., Ltd., CELLOXIDE 2021P by Daicel Co., Ltd., etc. are mentioned as a phenol resin which corresponds to (a1) component.
作為環氧樹脂及酚樹脂,例如可列舉(a2)軟化點超過60℃(常溫(25℃)下為固體)且環氧當量為500以下的環氧樹脂、及軟化點超過60℃(常溫下為固體)且羥基當量為300以下的酚樹脂。作為符合此種(a2)成分的環氧樹脂,二環戊二烯型環氧樹脂可列舉迪愛生(DIC)股份有限公司製造的HP-7200L(環氧當量為242~252)、HP-7200(環氧當量為254~264)、HP-7200H(環氧當量為272~284),甲酚酚醛清漆型環氧樹脂可列舉新日化環氧製造股份有限公司製造的YDCN-700-10(環氧當量為198~210)等。另外,作為符合(a2)成分的酚樹脂,可列舉二環戊二烯型酚樹脂等。作為符合此種(a2)成分的酚樹脂的例子,可列舉空氣水(AIR WATER)股份有限公司製造的HE系列(例如HE-100C-30(羥基當量為174))等。 Examples of epoxy resins and phenol resins include (a2) epoxy resins with a softening point exceeding 60°C (solid at normal temperature (25°C)) and an epoxy equivalent of 500 or less, and those having a softening point exceeding 60°C (at normal temperature). A phenolic resin having a hydroxyl equivalent weight of 300 or less. Examples of epoxy resins conforming to the component (a2) include dicyclopentadiene-type epoxy resins HP-7200L (epoxy equivalent: 242 to 252) and HP-7200 manufactured by DIC Co., Ltd. (epoxy equivalent weight is 254~264), HP-7200H (epoxy equivalent weight is 272~284), cresol novolac epoxy resin can include YDCN-700-10 ( The epoxy equivalent is 198~210) and so on. Moreover, a dicyclopentadiene-type phenol resin etc. are mentioned as a phenol resin which corresponds to (a2) component. As an example of the phenol resin which corresponds to such (a2) component, the HE series (for example, HE-100C-30 (hydroxyl equivalent: 174)) by Air Water Co., Ltd., etc. are mentioned.
就減小斜率b的值的觀點而言,符合(a2)成分的環氧樹脂的環氧當量、及酚樹脂的羥基當量較佳為500以下,更佳為400以下,進而佳為300以下,特佳為200以下。另外,符合(a2) 成分的環氧樹脂的環氧當量、及酚樹脂的羥基當量可為100以上。 From the viewpoint of reducing the value of the slope b, the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin corresponding to the component (a2) are preferably 500 or less, more preferably 400 or less, and still more preferably 300 or less, The best is below 200. In addition, it conforms to (a2) The epoxy equivalent of the epoxy resin of the components and the hydroxyl equivalent of the phenol resin may be 100 or more.
作為(a2)成分,並無特別限定,較佳為包含具有二環戊二烯骨架的環氧樹脂(二環戊二烯型環氧樹脂)、或具有二環戊二烯骨架的酚樹脂(二環戊二烯型酚樹脂)。該些亦可併用。藉由使用該些,而容易進一步減小膜狀接著劑10的所述斜率b的值(進一步增大絕對值)。另外,藉由使用該些,而容易降低未硬化狀態的膜狀接著劑的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,且增大於頻率0.1Hz的條件下所測定的80℃下的剪切黏度,因而容易兼具良好的晶片埋入性與低滲出性。 The component (a2) is not particularly limited, but preferably contains an epoxy resin (dicyclopentadiene-type epoxy resin) having a dicyclopentadiene skeleton, or a phenol resin having a dicyclopentadiene skeleton ( Dicyclopentadiene-type phenol resin). These can also be used together. By using these, it becomes easy to further reduce the value of the inclination b of the film adhesive 10 (to further increase the absolute value). In addition, by using these, the shear viscosity at 80°C measured under the condition of a frequency of 79.0 Hz of the uncured film-like adhesive can be easily reduced, and the value of the shear viscosity measured under the condition of a frequency of 0.1 Hz is increased. Shear viscosity at 80°C, so it is easy to have good wafer embedding and low exudation.
亦可併用以上所述的(a1)成分及(a2)成分以外的環氧樹脂來作為(a)熱硬化性成分。例如可使用苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂等。另外,作為環氧樹脂,亦可使用多官能環氧樹脂、縮水甘油胺型環氧樹脂、含雜環的環氧樹脂、脂環式環氧樹脂等通常已知的環氧樹脂。 The epoxy resin other than the above-mentioned (a1) component and (a2) component may be used together as a (a) thermosetting component. For example, novolak-type epoxy resins, such as a phenol novolak-type epoxy resin, a cresol novolak-type epoxy resin, etc. can be used. Moreover, as an epoxy resin, generally known epoxy resins, such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic ring-containing epoxy resin, and an alicyclic epoxy resin, can also be used.
另外,亦可併用以上所述的(a1)成分及(a2)成分以外的酚樹脂來作為(a)熱硬化性成分。例如可列舉:DIC(股)製造的芬萊特(Phenolite)KA、TD系列;三井化學股份有限公司製造的米萊斯(Mirex)XLC系列與XL系列(例如米萊斯(Mirex)XLC-LL)等。就耐熱性的觀點而言,較佳為投入85℃、85%RH的恆溫恆濕槽中48小時後的吸水率為2質量%以下,利用熱重量分析儀(thermogravimetric analyzer,TGA)測定出的350℃下的 加熱質量減少率(升溫速度:5℃/min,環境:氮)小於5質量%者。 Moreover, you may use together the phenol resin other than the above-mentioned (a1) component and (a2) component as (a) thermosetting component. Examples include: Phenolite KA and TD series manufactured by DIC Corporation; Mirex XLC series and XL series manufactured by Mitsui Chemicals Co., Ltd. (for example, Mirex XLC-LL) Wait. From the viewpoint of heat resistance, the water absorption rate after 48 hours in a constant temperature and humidity tank at 85° C. and 85% RH is preferably 2 mass % or less, as measured by a thermogravimetric analyzer (TGA). at 350°C The heating mass reduction rate (heating rate: 5°C/min, environment: nitrogen) is less than 5% by mass.
於併用環氧樹脂及酚樹脂來作為(a)熱硬化性成分的情況下,以環氧當量與羥基當量的當量比計,環氧樹脂及酚樹脂的調配比分別較佳為成為0.70/0.30~0.30/0.70,更佳為成為0.65/0.35~0.35/0.65,進而佳為成為0.60/0.40~0.40/0.60,特佳為成為0.60/0.40~0.50/0.50。藉由調配比為所述範圍內,容易獲得具有優異的硬化性、流動性等的膜狀接著劑10。
When an epoxy resin and a phenol resin are used in combination as the (a) thermosetting component, the mixing ratio of the epoxy resin and the phenol resin is preferably 0.70/0.30 in terms of the equivalent ratio of the epoxy equivalent and the hydroxyl equivalent, respectively. ~0.30/0.70, more preferably 0.65/0.35~0.35/0.65, still more preferably 0.60/0.40~0.40/0.60, particularly preferably 0.60/0.40~0.50/0.50. When the compounding ratio is within the above range, the film-
以(a)成分的總質量為基準,(a1)成分的含量較佳為5質量%~60質量%,更佳為10質量%~55質量%。藉此,容易確保硬化前的膜狀接著劑的流動性。 The content of the component (a1) is preferably 5% by mass to 60% by mass, more preferably 10% by mass to 55% by mass, based on the total mass of the component (a). Thereby, the fluidity|liquidity of the film adhesive before hardening can be easily ensured.
以(a)成分的總質量為基準,(a2)成分的含量較佳為40質量%~95質量%,更佳為45質量%~90質量%。若(a2)成分的含量為所述範圍內(尤其若為所述下限值以上),則容易提高未硬化狀態的膜狀接著劑10的於頻率0.1Hz的條件下所測定的80℃下的剪切黏度,容易減少樹脂自晶片端部的外滲(滲出)。
The content of the component (a2) is preferably 40% by mass to 95% by mass, more preferably 45% by mass to 90% by mass, based on the total mass of the component (a). When the content of the component (a2) is within the above-mentioned range (especially, if it is more than or equal to the above-mentioned lower limit value), the temperature at 80° C. measured under the condition of a frequency of 0.1 Hz of the film-
以膜狀接著劑10的總質量為基準,(a)成分的含量較佳為30質量%~80質量%,更佳為40質量%~60質量%。若(a)成分的含量為40質量%以上,則容易降低未硬化狀態的膜狀接著劑的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,埋入性更良好,並且作為熱硬化性接著劑的硬化特性變良好,更容易抑制膜狀接著劑自基板剝落或於內部產生氣泡,接著可靠性提
升。另一方面,若(a)成分的含量為80質量%以下,則容易控制塗敷時的穩定性及安裝後的可靠性。
The content of the component (a) is preferably 30% by mass to 80% by mass, and more preferably 40% by mass to 60% by mass, based on the total mass of the
(b)熱塑性成分 (b) Thermoplastic composition
作為(b)熱塑性成分,較佳為併用具有縮水甘油基等交聯性官能基且分子量高的熱塑性成分、及具有除縮水甘油基等以外的羧基或羥基等交聯性官能基且分子量低的熱塑性成分。例如,(b)成分較佳為包含:(b1)相對於單體單元總量而含有3質量%~15質量%的至少具有縮水甘油基作為交聯性官能基的單體單元、重量平均分子量為70萬~200萬且玻璃轉移溫度Tg為-50℃~50℃的熱塑性成分;及(b2)相對於單體單元總量而以1質量%~7質量%的比率含有不具有縮水甘油基且具有縮水甘油基以外的交聯性官能基(例如羧基及羥基等)作為交聯性官能基的單體單元、重量平均分子量為50萬~90萬且玻璃轉移溫度Tg為-50℃~50℃的熱塑性成分。 As the thermoplastic component (b), it is preferable to use together a thermoplastic component having a crosslinkable functional group such as a glycidyl group and a high molecular weight, and a thermoplastic component having a crosslinkable functional group other than a glycidyl group, such as a carboxyl group or a hydroxyl group, and a low molecular weight. Thermoplastic composition. For example, the component (b) preferably contains (b1) a monomer unit having at least a glycidyl group as a crosslinkable functional group in an amount of 3% by mass to 15% by mass with respect to the total amount of monomer units, and a weight average molecular weight. A thermoplastic component having a glass transition temperature Tg of -50° C. to 50° C. of 700,000 to 2,000,000; and (b2) containing no glycidyl group in a ratio of 1% by mass to 7% by mass relative to the total amount of monomer units And has a crosslinkable functional group other than glycidyl group (such as carboxyl group and hydroxyl group, etc.) as a monomer unit of the crosslinkable functional group, the weight average molecular weight is 500,000 to 900,000, and the glass transition temperature Tg is -50 ℃ ~ 50 °C thermoplastic composition.
作為(b)成分,較佳為作為熱塑性樹脂的丙烯酸樹脂(丙烯酸系樹脂),進而更佳為玻璃轉移溫度Tg為-50℃~50℃,且將丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯等具有環氧基或縮水甘油基作為交聯性官能基的官能性單體聚合而獲得的含環氧基的(甲基)丙烯酸共聚物等丙烯酸樹脂。 As the component (b), an acrylic resin (acrylic resin) which is a thermoplastic resin is preferable, and the glass transition temperature Tg is more preferably -50°C to 50°C, and glycidyl acrylate, glycidyl methacrylate Acrylic resins such as epoxy group-containing (meth)acrylic copolymers obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a crosslinkable functional group are used.
作為此種丙烯酸樹脂,可使用含環氧基的(甲基)丙烯酸酯共聚物、含環氧基的丙烯酸橡膠等,更佳為含環氧基的丙烯酸橡膠。含環氧基的丙烯酸橡膠是將丙烯酸酯作為主成分,且主要 包含丙烯酸丁酯與丙烯腈等的共聚物、丙烯酸乙酯與丙烯腈等的共聚物等的具有環氧基的丙烯酸橡膠。 As such an acrylic resin, an epoxy-group-containing (meth)acrylate copolymer, an epoxy-group-containing acrylic rubber, etc. can be used, and an epoxy-group-containing acrylic rubber is more preferable. The epoxy group-containing acrylic rubber uses acrylate as the main component, and mainly Acrylic rubbers having epoxy groups, such as copolymers of butyl acrylate and acrylonitrile, and the like, copolymers of ethyl acrylate and acrylonitrile, and the like.
再者,作為(b)成分的交聯性官能基,除環氧基以外,亦可列舉醇性或酚性羥基、羧基等交聯性官能基。 Moreover, as a crosslinkable functional group of (b) component, besides an epoxy group, a crosslinkable functional group, such as an alcoholic or phenolic hydroxyl group, and a carboxyl group, can also be mentioned.
關於(b1)成分,就進一步提升硬化後的接著力的觀點而言,相對於單體單元總量,具有交聯性官能基的單體單元較佳為3質量%~15質量%,更佳為5質量%~10質量%。 Regarding the component (b1), from the viewpoint of further improving the adhesive force after curing, the amount of monomer units having a crosslinkable functional group is preferably 3% by mass to 15% by mass, more preferably with respect to the total amount of monomer units. It is 5 mass % - 10 mass %.
關於(b2)成分,就進一步提升硬化後的接著力的觀點而言,相對於單體單元總量,具有交聯性官能基的單體單元較佳為1質量%~7質量%,更佳為1質量%~5質量%。 Regarding the component (b2), from the viewpoint of further improving the adhesive force after curing, the amount of monomer units having a crosslinkable functional group is preferably 1% by mass to 7% by mass, more preferably with respect to the total amount of monomer units. It is 1 mass % - 5 mass %.
(b1)成分的重量平均分子量較佳為70萬以上且200萬以下。若(b1)成分的重量平均分子量為70萬以上,則膜成膜性更良好,並且可進一步提高膜狀接著劑10的接著強度及耐熱性。若(b1)成分的重量平均分子量為200萬以下,則容易降低未硬化狀態的膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,因而埋入性更良好。
The weight average molecular weight of the component (b1) is preferably 700,000 or more and 2,000,000 or less. When the weight-average molecular weight of the component (b1) is 700,000 or more, the film-forming property becomes more favorable, and the adhesive strength and heat resistance of the film-
(b2)成分的重量平均分子量較佳為50萬以上且90萬以下。若(b2)成分的重量平均分子量為50萬以上,則藉由與(b1)成分併用而使成膜性提升的效果更加良好,並且容易提高未硬化狀態的膜狀接著劑10的於頻率0.1Hz的條件下所測定的80℃下的剪切黏度,容易減少樹脂自晶片端部的外滲(滲出)。若(b2)成分的重量平均分子量為90萬以下,則容易降低未硬化狀態的膜
狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,因而埋入性更良好。另外,若(b2)成分的重量平均分子量為90萬以下,則存在未硬化狀態的膜狀接著劑10的切削性得到改善,切割的品質變得更良好的情況。
The weight average molecular weight of the component (b2) is preferably 500,000 or more and 900,000 or less. When the weight-average molecular weight of the component (b2) is 500,000 or more, the effect of improving the film-forming properties by using together with the component (b1) is more favorable, and the frequency of the film-
重量平均分子量是藉由凝膠滲透層析法(Gel Penetration Chromatography,GPC),使用基於標準聚苯乙烯的校準曲線而獲得的聚苯乙烯換算值。 The weight average molecular weight is a polystyrene conversion value obtained by gel permeation chromatography (Gel Penetration Chromatography, GPC) using a calibration curve based on standard polystyrene.
另外,(b1)成分及(b2)成分的玻璃轉移溫度Tg較佳為-50℃~50℃。若玻璃轉移溫度Tg為50℃以下,則膜狀接著劑10的柔軟性更良好。另一方面,若玻璃轉移溫度Tg為-50℃以上,則膜狀接著劑10的柔軟性不會過高,因而在切割半導體晶圓時容易將膜狀接著劑10切斷。因此,容易抑制因毛刺的產生而導致切割性惡化。
Moreover, it is preferable that the glass transition temperature Tg of (b1) component and (b2) component is -50 degreeC - 50 degreeC. When the glass transition temperature Tg is 50° C. or lower, the flexibility of the
(b)成分整體的玻璃轉移溫度Tg較佳為-20℃~40℃,更佳為-10℃~30℃。藉此,在切割時膜狀接著劑10容易切斷,因而不易產生樹脂碎屑,容易提高膜狀接著劑10的接著力與耐熱性,另外容易顯現未硬化狀態的膜狀接著劑10的高流動性。
The glass transition temperature Tg of the entire component (b) is preferably -20°C to 40°C, more preferably -10°C to 30°C. As a result, the
玻璃轉移溫度Tg可使用熱示差掃描熱量儀(例如理學股份有限公司製造的「Thermo Plus 2」)進行測定。 The glass transition temperature Tg can be measured using a thermal differential scanning calorimeter (for example, "Thermo Plus 2" manufactured by Rigaku Co., Ltd.).
(b)成分亦能夠作為市售品來獲取。例如,作為(b1)成分,可列舉丙烯酸橡膠HTR-860P-3CSP(商品名,長瀨化成(Nagase ChemteX)股份有限公司製造)等。該化合物為具有縮 水甘油基部位作為交聯性的部位,且將包含丙烯酸衍生物的丙烯酸橡膠作為基體樹脂的化合物,重量平均分子量為100萬,玻璃轉移溫度Tg為15℃。另外,作為(b2)成分,可列舉SG-708-6(商品名,長瀨化成股份有限公司製造)等。該化合物為具有羧基及羥基且以丙烯酸橡膠為基體的化合物,重量平均分子量為70萬,玻璃轉移溫度Tg為4℃。 (b) A component can also be acquired as a commercial item. For example, as the component (b1), acrylic rubber HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Co., Ltd.) and the like can be mentioned. The compound has a condensed The hydroglyceryl moiety is a crosslinkable moiety, and a compound having an acrylic rubber containing an acrylic derivative as a matrix resin has a weight average molecular weight of 1 million and a glass transition temperature Tg of 15°C. Moreover, as (b2) component, SG-708-6 (brand name, the Nagase Chemical Co., Ltd. make) etc. are mentioned. This compound has a carboxyl group and a hydroxyl group and is based on an acrylic rubber, and has a weight average molecular weight of 700,000 and a glass transition temperature Tg of 4°C.
以(b)成分的總質量為基準,(b1)成分的含量較佳為50質量%以上,更佳為55質量%~90質量%。若(b1)成分的含量為50質量%以上,則容易降低未硬化狀態的膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,因而埋入性更良好。另一方面,若(b1)成分的含量為90質量%以下,則硬化後的接著強度更良好。
The content of the component (b1) is preferably 50% by mass or more, more preferably 55% by mass to 90% by mass, based on the total mass of the component (b). If the content of the component (b1) is 50 mass % or more, the shear viscosity at 80° C. measured under the condition of a frequency of 79.0 Hz of the film-
以(b)成分的總質量為基準,(b2)成分的含量較佳為10質量%以上,更佳為10質量%~45質量%。若(b2)成分的含量為所述範圍內,則於維持未硬化狀態的膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度的狀態下進行硬化,因而可獲得良好的硬化物。 The content of the component (b2) is preferably 10% by mass or more, more preferably 10% by mass to 45% by mass, based on the total mass of the component (b). If the content of the component (b2) is within the above range, the film adhesive 10 in the uncured state will be cured in a state where the shear viscosity at 80° C. measured under the condition of a frequency of 79.0 Hz is maintained. A good hardened product can be obtained.
相對於(a)成分100質量份,(b)成分的含量較佳為20質量份~80質量份,更佳為30質量份~50質量份。若(b)成分的含量為30質量份以上,則可抑制膜狀接著劑的可撓性的下降,並且於加熱後更容易實現高彈性化,可抑制滲出。另一方面,若(b)成分的含量為80質量份以下,則容易降低未硬化狀態的
膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,流動性進一步提升,因而埋入性更良好。
The content of the component (b) is preferably 20 parts by mass to 80 parts by mass, more preferably 30 parts by mass to 50 parts by mass, relative to 100 parts by mass of the component (a). When content of (b) component is 30 mass parts or more, the fall of the flexibility of a film-form adhesive agent can be suppressed, and it becomes easy to achieve high elasticity after heating, and can suppress bleeding. On the other hand, when the content of the component (b) is 80 parts by mass or less, it is easy to reduce the uncured state.
The shear viscosity at 80°C measured under the condition of a frequency of 79.0 Hz of the film-
(c)無機填料 (c) Inorganic filler
作為(c)成分,就B階段狀態下的膜狀接著劑10的切割性的提升、膜狀接著劑10的操作性的提升、導熱性的提升、剪切黏度(熔融黏度)的調整、觸變性的賦予、接著力的提升等觀點而言,較佳為二氧化矽填料等。
As the component (c), the cutting properties of the film adhesive 10 in the B-stage state are improved, the handleability of the
以提升未硬化狀態的膜狀接著劑10的切割性、充分顯現硬化後的接著力為目的,(c)成分較佳為包含平均粒徑不同的兩種以上的填料。作為(c)成分,例如可列舉:(c1)以提升未硬化狀態的膜狀接著劑10的切割性為目的的平均粒徑為0.2μm以上的第一填料;及(c2)以充分顯現硬化後的接著力為目的的平均粒徑小於0.2μm的第二填料,若可確保切割性與接著力,則可分別單獨使用,亦可組合使用。
The component (c) preferably contains two or more fillers having different average particle diameters for the purpose of improving the cutability of the
平均粒徑設為使用雷射繞射式粒度分佈測定裝置,將丙酮作為溶劑進行分析時所獲得的值。關於第一填料及第二填料的平均粒徑,於利用粒度分佈測定裝置進行分析的情況下,在可判別包含各個填料的程度內,更佳為其差大。 The average particle diameter is a value obtained when analyzed using a laser diffraction particle size distribution analyzer using acetone as a solvent. When the average particle diameter of the first filler and the second filler is analyzed by a particle size distribution analyzer, it is more preferable that the difference is large within the extent that each filler can be determined to be included.
於與(c2)成分組合使用的情況下,以(c)成分的總質量為基準,(c1)成分的含量較佳為30質量%以上。藉由(c1)成分的含量為30質量%以上,而容易抑制膜的切割性的惡化、未硬化狀態的膜狀接著劑10的流動性的惡化。
When used in combination with the component (c2), the content of the component (c1) is preferably 30% by mass or more based on the total mass of the component (c). When the content of the component (c1) is 30% by mass or more, it is easy to suppress the deterioration of the cutability of the film and the deterioration of the fluidity of the film-
於與(c1)成分組合使用的情況下,以(c)成分的總質量為基準,(c2)成分的含量較佳為50質量%以上。藉由(c2)成分的含量為50質量%以上,而容易降低未硬化狀態的膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,因而埋入性更良好,並且容易充分顯現硬化後的接著力。 When used in combination with the component (c1), the content of the component (c2) is preferably 50% by mass or more based on the total mass of the component (c). When the content of the component (c2) is 50 mass % or more, the shear viscosity at 80° C. measured under the condition of a frequency of 79.0 Hz of the film adhesive 10 in an uncured state is easily reduced, so that the embedding property is improved. Good, and it is easy to fully develop the adhesive force after hardening.
(c)成分整體的平均粒徑較佳為0.05μm~0.5μm,更佳為0.2μm~0.4μm。藉由(c)成分整體的平均粒徑為所述範圍內,而容易降低未硬化狀態的膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,埋入性更良好。
The average particle diameter of the entire component (c) is preferably 0.05 μm to 0.5 μm, more preferably 0.2 μm to 0.4 μm. When the average particle diameter of the whole component (c) is within the above-mentioned range, the shear viscosity at 80° C. measured under the condition of a frequency of 79.0 Hz of the film-
相對於(a)成分100質量份,(c)成分的含量較佳為30質量份~70質量份,更佳為40質量份~65質量份。藉由(c)成分的含量為所述下限值以上,而有容易抑制未硬化狀態的膜狀接著劑10的切割性的惡化、硬化後的接著力的下降,並且容易提高未硬化狀態的膜狀接著劑10的於頻率0.1Hz的條件下所測定的80℃下的剪切黏度,容易減少樹脂自晶片端部的外滲(滲出)的傾向。另一方面,藉由(c)成分的含量為所述上限值以下,而有容易降低未硬化狀態的膜狀接著劑10的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度,埋入性更良好,並且容易抑制硬化後的彈性係數的上升的傾向。
The content of the component (c) is preferably 30 parts by mass to 70 parts by mass, more preferably 40 parts by mass to 65 parts by mass, relative to 100 parts by mass of the component (a). When the content of the component (c) is equal to or greater than the lower limit value, the deterioration of the cutability of the film adhesive 10 in the uncured state and the decrease in the adhesive force after curing can be easily suppressed, and the uncured state can be easily improved. The shear viscosity at 80° C. of the film-
(d)硬化促進劑 (d) Hardening accelerator
以獲得良好的硬化性為目的,較佳為使用(d)硬化促進劑。作為(d)成分,就反應性的觀點而言,較佳為咪唑系的化合物。
再者,若(d)成分的反應性過高,則有藉由膜狀接著劑10的製造步驟中的加熱,不僅剪切黏度容易上升,亦容易引起經時的劣化的傾向。另一方面,若(d)成分的反應性過低,則有膜狀接著劑10的硬化性容易降低的傾向。若膜狀接著劑10未充分硬化便搭載於製品內,則無法獲得充分的接著性,而有可能使半導體裝置的連接可靠性惡化。
For the purpose of obtaining good hardening properties, (d) a hardening accelerator is preferably used. As the component (d), an imidazole-based compound is preferred from the viewpoint of reactivity.
In addition, when the reactivity of the component (d) is too high, not only the shear viscosity tends to increase easily, but also deterioration over time tends to be easily caused by heating in the production process of the
另外,於(d)成分的含量過少的情況下,有膜狀接著劑10的硬化性容易降低的傾向。另一方面,於(d)成分的含量過多的情況下,有藉由膜狀接著劑10的製造步驟中的加熱,不僅剪切黏度容易上升,亦容易引起經時的劣化的傾向。就此種觀點而言,相對於(a)成分100質量份,(d)成分的含量較佳為0質量份~0.20質量份,更佳為0.05質量份~0.20質量份。
Moreover, when content of (d) component is too small, there exists a tendency for the curability of the film adhesive 10 to fall easily. On the other hand, when there is too much content of (d) component, there exists a tendency for not only the shear viscosity to rise easily but also to deteriorate easily with time by heating in the manufacturing process of the
(e)其他成分 (e) Other ingredients
就接著性提升的觀點而言,除所述成分以外,亦可進而使用適量的本技術領域中可使用的其他成分。作為此種成分,例如可列舉偶合劑。作為偶合劑,可列舉:γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-苯基胺基丙基三甲氧基矽烷、3-(2-胺基乙基)胺基丙基三甲氧基矽烷等。 In addition to the above-mentioned components, an appropriate amount of other components that can be used in the technical field may be used from the viewpoint of improving adhesion. As such a component, a coupling agent is mentioned, for example. As the coupling agent, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl group) aminopropyl trimethoxysilane, etc.
相對於(a)成分100質量份,偶合劑的含量較佳為0質量份~5質量份,更佳為0.1質量份~1質量份。藉由偶合劑的含量為所述下限值以上,而有對晶片表面或作為被黏著體的基板的潤濕性變佳,接著力及可靠性提升的傾向。另一方面,藉由偶 合劑的含量為所述上限值以下,而有容易抑制伴隨加熱時的膨脹而產生氣泡的傾向。 The content of the coupling agent is preferably 0 to 5 parts by mass, more preferably 0.1 to 1 part by mass, relative to 100 parts by mass of the component (a). When the content of the coupling agent is greater than or equal to the lower limit value, the wettability to the wafer surface or the substrate as an adherend tends to be improved, and the adhesion and reliability tend to be improved. On the other hand, by even When the content of the mixture is equal to or less than the above upper limit value, the generation of air bubbles accompanying expansion during heating tends to be easily suppressed.
(膜狀接著劑) (Film Adhesive)
膜狀接著劑10例如可藉由以下步驟而獲得:藉由將包含所述成分的接著劑組成物的清漆塗佈於基材膜上而形成清漆的層的步驟、藉由加熱乾燥而自清漆的層去除溶劑的步驟、將基材膜去除的步驟。
The film-
清漆可將包含所述成分的接著劑組成物在有機溶劑中混合、混煉等來製備。混合及混練可使用通常的攪拌機、擂潰機、三輥磨機、球磨機等分散機。該些設備可適當組合來使用。清漆的塗佈例如可藉由塗敷機來進行。清漆的加熱乾燥條件只要為所使用的有機溶劑充分揮發的條件則並無特別限制,例如可設為於60℃~200℃下加熱0.1分鐘~90分鐘。 The varnish can be prepared by mixing, kneading, etc., the adhesive composition containing the above-mentioned components in an organic solvent. For mixing and kneading, a dispersing machine such as a normal mixer, a kneader, a three-roll mill, and a ball mill can be used. These devices can be used in appropriate combination. The coating of the varnish can be performed by, for example, a coater. The heating and drying conditions of the varnish are not particularly limited as long as the organic solvent used is sufficiently volatilized, and for example, it can be heated at 60° C. to 200° C. for 0.1 minutes to 90 minutes.
作為有機溶劑,只要為可將所述成分均勻地溶解、混煉或分散者則可無限制地使用現有公知者。作為此種溶劑,例如可列舉:丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮系溶劑;二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、二甲苯等。就乾燥速度快、價格低的方面而言,較佳為使用甲基乙基酮、環己酮等。 As the organic solvent, any conventionally known organic solvent can be used without limitation as long as the components can be uniformly dissolved, kneaded, or dispersed. Examples of such solvents include ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; dimethylformamide, dimethylacetamide, N-methyl Pyrrolidone, toluene, xylene, etc. In terms of high drying rate and low price, methyl ethyl ketone, cyclohexanone, etc. are preferably used.
所述基材膜並無特別限制,例如可列舉:聚酯膜(聚對苯二甲酸乙二酯膜等)、聚丙烯膜(定向聚丙烯(Oriented PolyPropylene,OPP)膜等)、聚醯亞胺膜、聚醚醯亞胺膜、聚醚 萘二甲酸酯膜、甲基戊烯膜等。 The base film is not particularly limited, and examples thereof include polyester films (polyethylene terephthalate films, etc.), polypropylene films (oriented polypropylene (Oriented PolyPropylene, OPP) films, etc.), polyamide films, etc. Amine film, polyetherimide film, polyether Naphthalene dicarboxylate film, methyl pentene film, etc.
為了將第一線及第一半導體元件、以及基板的配線電路等的凹凸充分埋入,膜狀接著劑10的厚度較佳為20μm~200μm。另外,藉由厚度為20μm以上,而容易獲得充分的接著力,藉由為200μm以下,而容易滿足半導體裝置的小型化的要求。就此種觀點而言,膜狀接著劑10的厚度更佳為30μm~200μm,進而佳為40μm~150μm。
The thickness of the film-
作為獲得厚的膜狀接著劑10的方法,可列舉將膜狀接著劑10彼此貼合的方法。
As a method of obtaining the thick film-like
(接著片) (Continued film)
如圖2所示,接著片100為於基材膜20上具有膜狀接著劑10者。接著片100可藉由在獲得膜狀接著劑10的步驟中,不去除基材膜20而獲得。
As shown in FIG. 2 , the
如圖3所示,接著片110為於接著片100的與基材膜20為相反側的面上進而具有覆蓋膜30者。作為覆蓋膜30,例如可列舉聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)膜、聚乙烯(polyethylene,PE)膜、OPP膜等。
As shown in FIG. 3 , the
膜狀接著劑10亦可積層於切割帶上。藉由使用由此而獲得的切割.黏晶一體型接著片,可一次性進行半導體晶圓上的層壓步驟,能夠實現作業的效率化。
The
作為切割帶,例如可列舉:聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚醯亞胺膜 等塑膠膜等。亦可視需要而對切割帶進行底塗處理、UV處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。 Examples of the dicing tape include polytetrafluoroethylene films, polyethylene terephthalate films, polyethylene films, polypropylene films, polymethylpentene films, and polyimide films. and other plastic films. Surface treatments such as primer treatment, UV treatment, corona discharge treatment, grinding treatment, and etching treatment can also be performed on the dicing tape as required.
切割帶較佳為具有黏著性者。作為此種切割帶,可列舉對所述塑膠膜賦予黏著性者、於所述塑膠膜的單面設置有黏著劑層者。 The dicing tape is preferably adhesive. As such a dicing tape, one that imparts adhesiveness to the plastic film and one that is provided with an adhesive layer on one side of the plastic film can be mentioned.
作為此種切割.黏晶一體型接著片,可列舉圖4所示的接著片120及圖5所示的接著片130。如圖4所示,接著片120具有如下結構:將於可確保施加有拉伸張力時的伸長率的基材膜40上設置有黏著劑層50的切割帶60作為支撐基材,且於切割帶60的黏著劑層50上設置有膜狀接著劑10。如圖5所示,接著片130具有接著片120中,於膜狀接著劑10的表面進而設置有基材膜20的結構。
as such a cut. The die-bonding integrated adhesive sheet includes the
作為基材膜40,可列舉關於切割帶所記載的所述塑膠膜。另外,黏著劑層50例如可使用包含液狀成分及熱塑性成分且具有適度的黏接強度的樹脂組成物來形成。為了獲得切割帶60,可列舉:將該樹脂組成物塗佈於基材膜40上並加以乾燥而形成黏著劑層50的方法;將暫時形成於PET膜等其他膜上的黏著劑層50與基材膜40貼合的方法等。
Examples of the
作為於切割帶60上積層膜狀接著劑10的方法,可列舉:將所述接著劑組成物的清漆直接塗佈於切割帶60上並加以乾燥的方法;將清漆網版印刷至切割帶60上的方法;預先製作膜狀接著劑10,並藉由壓製、熱輥層壓而將其積層於切割帶60上的方
法等。就可連續地製造、效率佳的方面而言,較佳為藉由熱輥層壓進行積層。
As a method of laminating the film-
切割帶60的厚度並無特別限制,可根據膜狀接著劑10的厚度及切割.黏晶一體型接著片的用途,基於所屬技術領域中具有通常知識者的知識而適當地確定。再者,藉由切割帶60的厚度為60μm以上,而有容易抑制操作性的下降、由自切割帶60剝離藉由切割而單片化的半導體元件的步驟中的擴展(expanding)所致的破裂等的傾向。另一方面,藉由切割帶的厚度為180μm以下,而容易兼具經濟性與操作性的優點。根據以上所述,切割帶60的厚度較佳為180μm以下,更佳為60μm~180μm。
The thickness of the cutting
(半導體裝置) (semiconductor device)
圖6是表示半導體裝置的剖面圖。如圖6所示,半導體裝置200是於第一半導體元件Wa上層疊第二半導體元件Waa而成的半導體裝置。詳細而言,是將第一階段的第一半導體元件Wa經由第一線88而電性連接於基板14,並且於第一半導體元件Wa上,經由膜狀接著劑10而安裝(壓接)較第一半導體元件Wa的面積更大的第二階段的第二半導體元件Waa,藉此將第一線88及第一半導體元件Wa埋入膜狀接著劑10中而成的線埋入型(晶片埋入型)的半導體裝置。另外,半導體裝置200中,進而經由第二線98而將基板14與第二半導體元件Waa電性連接,並且藉由密封材42而將第二半導體元件Waa密封。
6 is a cross-sectional view showing a semiconductor device. As shown in FIG. 6 , the
第一半導體元件Wa的厚度為10μm~170μm,第二半
導體元件Waa的厚度為20μm~400μm。埋入至膜狀接著劑10內部的第一半導體元件Wa為用以驅動半導體裝置200的控制器晶片。
The thickness of the first semiconductor element Wa is 10 μm to 170 μm, and the second half
The thickness of the conductor element Waa is 20 μm to 400 μm. The first semiconductor element Wa embedded in the
基板14包括於表面形成有電路圖案84、電路圖案94的有機基板90。第一半導體元件Wa經由接著劑41而安裝(壓接)於電路圖案94上,第二半導體元件Waa以覆蓋未安裝(壓接)有第一半導體元件Wa的電路圖案94、第一半導體元件Wa、及電路圖案84的一部分的方式經由膜狀接著劑10而安裝(壓接)於基板14。由基板14上的電路圖案84、電路圖案94所引起的凹凸被膜狀接著劑10埋入。並且,利用樹脂製的密封材42,將第二半導體元件Waa、電路圖案84及第二線98密封。
The
(半導體裝置的製造方法) (Manufacturing method of semiconductor device)
半導體裝置可藉由如下半導體裝置的製造方法而製造,所述製造方法包括:第一安裝步驟,將第一半導體元件經由第一線而電性連接於基板上;層壓步驟,於較第一半導體元件的面積更大的第二半導體元件的單面上貼附膜狀接著劑,所述膜狀接著劑的於頻率79.0Hz的條件下所測定的80℃下的剪切黏度為300Pa.s以下,且當將於頻率0.1Hz、1.0Hz、10.0Hz及79.0Hz的條件下所測定的80℃下的剪切黏度設為Y(Pa.s)、將頻率設為X(Hz)、將X與Y的關係冪近似而以Y=aXb來表示時,斜率b為-0.67以下;以及第二安裝步驟,以膜狀接著劑覆蓋第一半導體元件的方式載置貼附有膜狀接著劑的第二半導體元件,來壓接膜狀接著
劑,藉此將第一線及第一半導體元件埋入膜狀接著劑。以下,以半導體裝置200的製造程序為例來進行具體說明。
The semiconductor device can be manufactured by the following method for manufacturing a semiconductor device. The manufacturing method includes: a first mounting step, in which the first semiconductor element is electrically connected to the substrate via a first wire; and a lamination step, which is compared with the first step A film-like adhesive was attached to one side of the second semiconductor element with a larger area of the semiconductor element, and the shear viscosity of the film-like adhesive at 80° C. measured under the condition of a frequency of 79.0 Hz was 300 Pa. s or less, and when the shear viscosity at 80°C measured at frequencies of 0.1 Hz, 1.0 Hz, 10.0 Hz, and 79.0 Hz is Y (Pa·s), and the frequency is X (Hz), When the relationship between X and Y is approximated to a power and expressed as Y=aX b , the slope b is -0.67 or less; and in the second mounting step, the film-shaped adhesive is placed so that the first semiconductor element is covered with a film-shaped adhesive. The second semiconductor element of the adhesive is press-bonded with the film-like adhesive, whereby the first wire and the first semiconductor element are embedded in the film-like adhesive. Hereinafter, a specific description will be given by taking the manufacturing process of the
首先,如圖7所示,於基板14上的電路圖案94上安裝帶有接著劑41的第一半導體元件Wa,且經由第一線88而將基板14上的電路圖案84與第一半導體元件Wa電性連接(第一安裝步驟)。
First, as shown in FIG. 7 , the first semiconductor element Wa with the adhesive 41 is mounted on the
其次,於半導體晶圓(例如8吋尺寸、厚度50μm)的單面上層壓接著片100,並剝去基材膜20,藉此而於半導體晶圓的單面貼附膜狀接著劑10。並且,於將切割帶60貼合於膜狀接著劑10後,切割為規定尺寸(例如7.5mm見方),並將切割帶60剝離,藉此而如圖8所示,獲得貼附有膜狀接著劑10的第二半導體元件Waa(層壓步驟)。
Next, the
層壓步驟較佳為於50℃~100℃下進行,更佳為於60℃~80℃下進行。若層壓步驟的溫度為50℃以上,則可獲得與半導體晶圓的良好的密接性。若層壓步驟的溫度為100℃以下,則可抑制膜狀接著劑10於層壓步驟中過度流動,因而可防止引起厚度的變化等。 The lamination step is preferably performed at 50°C to 100°C, more preferably 60°C to 80°C. When the temperature of the lamination step is 50° C. or higher, good adhesion to the semiconductor wafer can be obtained. If the temperature of the lamination step is 100° C. or lower, the excessive flow of the film adhesive 10 in the lamination step can be suppressed, and thus variation in thickness and the like can be prevented from being caused.
作為切割方法,可列舉:使用旋轉刀刃進行刀片切割的方法、藉由雷射而將膜狀接著劑10或晶圓與膜狀接著劑10兩者切斷的方法、以及常溫或冷卻條件下的伸展等通用的方法等。
Examples of the dicing method include a method of blade dicing using a rotating blade, a method of cutting the film-
並且,將貼附有膜狀接著劑10的第二半導體元件Waa安裝(壓接)於經由第一線88而連接有第一半導體元件Wa的基
板14。具體而言,如圖9所示,以膜狀接著劑10覆蓋第一半導體元件Wa的方式載置貼附有膜狀接著劑10的第二半導體元件Waa,繼而,如圖10所示,藉由使第二半導體元件Waa壓接於基板14而將第二半導體元件Waa固定於基板14(第二安裝步驟)。第二安裝步驟較佳為將膜狀接著劑10於80℃~180℃、0.01MPa~0.50MPa的條件下壓接0.5秒~3.0秒。於第二安裝步驟後,亦可進而於60℃~175℃、0.3MPa~0.7MPa的條件下,將膜狀接著劑10加壓及加熱5分鐘以上。
Then, the second semiconductor element Waa to which the
繼而,如圖11所示,於將基板14與第二半導體元件Waa經由第二線98而電性連接後,於170℃~180℃、5MPa~8MPa的條件下,利用密封材42將電路圖案84、第二線98及第二半導體元件Waa整體密封(密封步驟)。藉由經過此種步驟而可製造半導體裝置200。
Next, as shown in FIG. 11 , after the
如上所述,半導體裝置200可使用如下膜狀接著劑來製造,所述膜狀接著劑於第一半導體元件經由第一線而電性連接於基板上,並且於第一半導體元件上安裝較第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中,用於安裝第二半導體元件並且埋入第一線及第一半導體元件,於頻率79.0Hz的條件下所測定的80℃下的剪切黏度為300Pa.s以下,且當將於頻率0.1Hz、1.0Hz、10.0Hz及79.0Hz的條件下所測定的80℃下的剪切黏度設為Y(Pa.s)、將頻率設為X(Hz)、將X與Y的關係冪近似而以Y=aXb來表示時,斜率b為-0.67以下。藉由使用滿足所述
條件的膜狀接著劑,可於第二安裝步驟中,抑制空隙的產生並且利用膜狀接著劑來埋入第一半導體元件及第一線,同時可抑制膜狀接著劑自第二半導體元件的端部的外滲(滲出)。另外,藉由使用滿足所述條件的膜狀接著劑,於第二安裝步驟中不易於膜狀接著劑中殘存應力,可抑制第二半導體元件連同膜狀接著劑一起翹曲。
As described above, the
以上,對本發明的較佳實施形態進行了說明,但本發明並不一定限定於所述實施形態。例如,亦可如下所述在不脫離其主旨的範圍內進行適當變更。 The preferred embodiments of the present invention have been described above, but the present invention is not necessarily limited to the above-described embodiments. For example, as described below, appropriate changes may be made without departing from the gist.
半導體裝置200中,基板14為電路圖案84、電路圖案94於表面各形成有兩處的有機基板90,但基板14並不限定於此,亦可使用引線框架等金屬基板。
In the
半導體裝置200於第一半導體元件Wa上積層有第二半導體元件Waa,具有半導體元件分成兩段積層的構成,但半導體裝置的構成並不限定於此。可於第二半導體元件Waa上進而積層第三半導體元件,亦可於第二半導體元件Waa上進而積層多個半導體元件。隨著所積層的半導體元件的數量增加,而可增加所獲得的半導體裝置的容量。
The
本實施形態的半導體裝置的製造方法中,於層壓步驟中,於半導體晶圓的單面層壓圖2所示的接著片100,並剝去基材膜20,藉此而貼附有膜狀接著劑10,但層壓時所使用的接著片並不限定於此。可代替接著片100而使用圖4及圖5所示的切割.黏
晶一體型接著片120、接著片130。該情況下,當切割半導體晶圓時,無需另行貼附切割帶60。
In the manufacturing method of the semiconductor device of the present embodiment, in the lamination step, the
於層壓步驟中,亦可並非層壓半導體晶圓,而是使將半導體晶圓單片化而得的半導體元件層壓於接著片100。該情況下,可省略切割步驟。
In the lamination step, instead of laminating the semiconductor wafers, semiconductor elements obtained by singulating the semiconductor wafers may be laminated on the
以下,列舉實施例來對本發明進行更具體說明。然而,本發明並不限定於以下的實施例。 Hereinafter, an Example is given and this invention is demonstrated more concretely. However, the present invention is not limited to the following examples.
(實施例1~實施例4及比較例1~比較例8) (Example 1 to Example 4 and Comparative Example 1 to Comparative Example 8)
以表1及表2所示的品名及組成比(單位:質量份),依照下述程序來調配各成分,製作清漆。首先,分別秤量作為熱硬化性樹脂的環氧樹脂及酚樹脂、以及無機填料而獲得組成物,進而添加環己酮進行攪拌混合。於其中添加作為熱塑性樹脂的丙烯酸橡膠並攪拌後,進而加入偶合劑及硬化促進劑來進行攪拌,直至各成分變得均勻,從而獲得清漆。再者,表1及表2中的各成分的品名是指以下者。 With the product names and composition ratios (unit: parts by mass) shown in Tables 1 and 2, each component was prepared in accordance with the following procedure to prepare a varnish. First, an epoxy resin, a phenol resin, and an inorganic filler as thermosetting resins are respectively weighed to obtain a composition, and cyclohexanone is further added and stirred and mixed. After adding and stirring acrylic rubber as a thermoplastic resin, a coupling agent and a hardening accelerator were further added and stirred until each component became uniform, thereby obtaining a varnish. In addition, the product name of each component in Table 1 and Table 2 means the following.
(環氧樹脂) (epoxy resin)
HP-7200L:商品名,DIC股份有限公司製造,二環戊二烯型環氧樹脂,環氧當量為242~252,軟化點為50℃~60℃,25℃下為固態
HP-7200L: trade name, manufactured by DIC Co., Ltd., dicyclopentadiene epoxy resin, epoxy equivalent 242~252, softening
VG3101L:商品名,普林泰科(Printec)股份有限公司製造,多官能環氧樹脂,環氧當量為210,軟化點為39℃~46℃,25℃ 下為固態 VG3101L: trade name, manufactured by Printec Co., Ltd., multifunctional epoxy resin, epoxy equivalent of 210, softening point of 39°C to 46°C, 25°C solid state
YDCN-700-10:商品名,新日化環氧製造股份有限公司製造,鄰甲酚酚醛清漆型環氧樹脂,環氧當量為210,軟化點為75℃~85℃,25℃下為固態 YDCN-700-10: trade name, manufactured by New Daily Chemical Epoxy Manufacturing Co., Ltd., o-cresol novolac epoxy resin, epoxy equivalent is 210, softening point is 75℃~85℃, solid at 25℃
EXA-830CRP:DIC股份有限公司製造,雙酚F型環氧樹脂,環氧當量為155~163,分子量為298.3,25℃下為液狀 EXA-830CRP: manufactured by DIC Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent 155~163, molecular weight 298.3, liquid at 25°C
賽羅西德(CELLOXIDE)2021P:商品名,大賽璐股份有限公司製造,3',4'-環氧環己基甲基3,4-環氧環己烷羧酸酯,環氧當量為128~145,分子量為252.3,25℃下為液狀 CELLOXIDE 2021P: trade name, manufactured by Daicel Co., Ltd., 3',4'-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, epoxy equivalent is 128~ 145, molecular weight 252.3, liquid at 25°C
(酚樹脂) (Phenolic resin)
HE-100C-30:商品名,空氣水股份有限公司製造,酚樹脂,羥基當量為175,軟化點為79℃,吸水率為1質量%,加熱質量減少率為4質量%,25℃下為固態 HE-100C-30: trade name, manufactured by Air Water Co., Ltd., phenol resin, hydroxyl equivalent of 175, softening point of 79°C, water absorption rate of 1 mass %, heating mass reduction rate of 4 mass %, at 25° C. solid state
(無機填料) (inorganic filler)
SC2050-HLG:商品名,雅都瑪(Admatechs)股份有限公司製造,二氧化矽填料分散液,平均粒徑為0.50μm SC2050-HLG: trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 μm
(有機填料) (organic filler)
EXL-2655:商品名,日本羅門哈斯(Rohm and Haas Japan)股份有限公司製造,核殼型有機微粒子,平均粒徑為200μm EXL-2655: trade name, manufactured by Rohm and Haas Japan Co., Ltd., core-shell type organic microparticles, with an average particle size of 200 μm
X-52-854:商品名,信越化學工業股份有限公司製造,矽酮樹脂粉末,平均粒徑為0.7μm X-52-854: trade name, manufactured by Shin-Etsu Chemical Co., Ltd., silicone resin powder, average particle size 0.7 μm
X-52-7030:商品名,信越化學工業股份有限公司製造,矽酮 複合粉末,平均粒徑為0.8μm X-52-7030: Trade name, manufactured by Shin-Etsu Chemical Co., Ltd., silicone Composite powder with an average particle size of 0.8 μm
(偶合劑) (coupling agent)
A-189:商品名,日本邁圖高新材料(Momentive Performance Materials Japan)有限責任公司製造,γ-巰基丙基三甲氧基矽烷 A-189: Trade name, manufactured by Momentive Performance Materials Japan Co., Ltd., γ-mercaptopropyltrimethoxysilane
A-1160:商品名,日本邁圖高新材料有限責任公司製造,γ-脲基丙基三乙氧基矽烷 A-1160: Trade name, manufactured by Momentive High-tech Materials Co., Ltd., γ-ureidopropyl triethoxysilane
(硬化促進劑) (hardening accelerator)
2PZ-CN:商品名,四國化成工業股份有限公司製造,1-氰基乙基-2-苯基咪唑 2PZ-CN: Trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole
(丙烯酸橡膠) (acrylic rubber)
HTR-860P-3CSP:樣品名,長瀨化成股份有限公司製造,重量平均分子量為100萬,縮水甘油基官能基單體比率為3質量%,Tg為15℃
HTR-860P-3CSP: Sample name, manufactured by Nagase Chemical Co., Ltd., weight average
SG-708-6:樣品名,長瀨化成股份有限公司製造,重量平均分子量為70萬,酸價為9mgKOH/g,Tg為4℃ SG-708-6: Sample name, manufactured by Nagase Chemical Co., Ltd., weight-average molecular weight of 700,000, acid value of 9 mgKOH/g, and Tg of 4°C
其次,利用100目的過濾器對所獲得的清漆進行過濾,並進行真空脫泡。將真空脫泡後的清漆塗佈於作為基材膜且已實施脫模處理的聚對苯二甲酸乙二酯(PET)膜(厚度38μm)上。使用塗敷機(優能(Techno Smart)股份有限公司製造,為定製品故型號不明),以塗敷速度1m/分鐘的條件進行塗佈。以90℃下5分鐘、繼而140℃下5分鐘的兩階段對所塗佈的清漆進行加熱乾燥。如此而獲得於PET膜上具有處於B階段狀態的厚度20μm的
膜狀接著劑(第一膜狀接著劑)的接著膜。繼而,將所獲得的接著膜、及於基材膜(厚度90μm)上設置有黏著劑層(厚度30μm)的切割帶(日立萬勝(Hitachi Maxell)股份有限公司製造,商品名:SD-3004),以接著膜的膜狀接著劑側的面與切割帶的黏著劑層側的面密接的方式貼合,獲得第一切割.黏晶一體型接著片。另外,將膜狀接著劑的厚度變更為110μm,除此以外,以與所述相同的方式獲得具有厚度110μm的第二膜狀接著劑的第二切割.黏晶一體型接著片。
Next, the obtained varnish was filtered with a 100-mesh filter, and vacuum defoamed was performed. The varnish after vacuum defoaming was apply|coated on the polyethylene terephthalate (PET) film (thickness 38 micrometers) which performed the mold release process as a base film. Using a coating machine (manufactured by Techno Smart Co., Ltd., the model number is unknown because it is a custom product), the coating was carried out at a coating speed of 1 m/min. The applied varnish was heated and dried in two stages at 90°C for 5 minutes and then at 140°C for 5 minutes. In this way, a PET film having a thickness of 20 μm in a B-stage state was obtained.
An adhesive film of a film-like adhesive (first film-like adhesive). Next, the obtained adhesive film and a dicing tape (manufactured by Hitachi Maxell Co., Ltd., trade name: SD-3004) provided with an adhesive layer (
<各種物性的評價> <Evaluation of various physical properties>
如下所述對所獲得的切割.黏晶一體型接著片進行評價。將評價結果示於表1及表2中。 The cut obtained is as described below. Bonded die-integrated adhesive sheets were evaluated. The evaluation results are shown in Tables 1 and 2.
[剪切黏度測定] [Determination of Shear Viscosity]
藉由下述方法來評價膜狀接著劑的剪切黏度。將基材膜及切割帶自第一切割.黏晶一體型接著片剝離,僅取出第一膜狀接著劑(厚度110μm),並將第一膜狀接著劑置於保持為70℃的加熱板上,於其上熱層壓相同的第一膜狀接著劑。將其反覆4層,製作厚度440μm的膜狀接著劑的層壓樣品。將該層壓樣品衝壓為直徑8mm的圓形形狀,藉此而獲得8mmΦ、厚度440μm的測定用樣品。於動態黏彈性裝置ARES(TA儀器公司製造)上安置直徑8mm的平行錐板夾具,並於其中安置測定用樣品。測定時,一邊於80℃下對測定用樣品賦予5%的應變,一邊以離散模式使頻率變化為0.1Hz、1.0Hz、10.0Hz、79.0Hz,測定各個頻率的剪切黏度。
The shear viscosity of the film adhesive was evaluated by the following method. The substrate film and cutting tape are cut from the first. The die-bonding integrated adhesive sheet was peeled off, and only the first film-like adhesive (
將剪切黏度設為Y(Pa.s)、將頻率設為X(Hz),根據所測定出的各頻率的剪切黏度,將X與Y的關係冪近似而以Y=aXb來表示,求出b的值。此處,a及b為常數,b表示於雙對數圖表中繪製座標(X,Y)時的X及Y的冪近似曲線的斜率。將該些結果示於表1及表2中。另外,圖12中示出表示實施例1及比較例1的膜狀接著劑的剪切黏度與頻率的關係的雙對數圖表。 Let the shear viscosity be Y (Pa.s) and the frequency be X (Hz), and from the measured shear viscosity at each frequency, the relation between X and Y is approximated to a power and expressed as Y= aXb , find the value of b. Here, a and b are constants, and b represents the slope of a power approximation curve of X and Y when the coordinates (X, Y) are plotted on a logarithmic graph. These results are shown in Table 1 and Table 2. 12 shows a double logarithmic graph showing the relationship between the shear viscosity and the frequency of the film adhesives of Example 1 and Comparative Example 1.
[評價樣品的製作] [Preparation of Evaluation Samples]
膜狀接著劑的埋入性及滲出量是藉由下述方法來進行評價。將第一切割.黏晶一體型接著片的第一膜狀接著劑側的基材膜剝離,並將厚度50μm的半導體晶圓(矽晶圓)及晶圓環以階段溫度70℃貼附於第一膜狀接著劑,製作切割樣品。其次,使用全自動切割機(full auto dicer)DFD-6361(商品名,迪思科(Disco)股份有限公司製造),將切割樣品切斷。於刀片轉數為40000rpm、切斷速度為50mm/sec、晶片尺寸為3.2mm×5.5mm的切斷條件下進行,並自切斷的切割樣品拾取小片,藉此而獲得帶有第一膜狀接著劑(厚度20μm)的第一半導體元件。
The embedding property and the amount of exudation of the film adhesive were evaluated by the following methods. The first cut. The substrate film on the first film-like adhesive side of the die-bonding integrated adhesive sheet is peeled off, and a semiconductor wafer (silicon wafer) with a thickness of 50 μm and a wafer ring are attached to the first film-like adhesive at a step temperature of 70°C agent to make cutting samples. Next, the cut sample was cut using a full auto dicer DFD-6361 (trade name, manufactured by Disco Co., Ltd.). It was carried out under the cutting conditions of 40,000 rpm of blade rotation, 50 mm/sec of cutting speed, and 3.2 mm x 5.5 mm of wafer size, and picked up small pieces from the cut sample, thereby obtaining a film with a first film-like shape. The first semiconductor element of the adhesive (
使用第二切割.黏晶一體型接著片,且使用厚度100μm的半導體晶圓,於晶片尺寸為5.7mm×12mm的條件下進行切斷,除此以外,藉由與製作帶有第一膜狀接著劑的第一半導體元件的方法相同的方法,獲得帶有第二膜狀接著劑(厚度110μm)的第二半導體元件。
Use the second cut. A die-bonding integrated adhesive sheet is used, and a semiconductor wafer with a thickness of 100 μm is used, and the wafer size is 5.7 mm × 12 mm. A second semiconductor element with a second film-like adhesive (
將所獲得的帶有第一膜狀接著劑的第一半導體元件及 帶有第二膜狀接著劑的第二半導體元件,利用壓接機(貝思(Besi)公司製造的黏晶,商品名:Esec 2100 sD PPPplus),安裝於塗佈有AUS308(太陽控股股份有限公司製造,厚度260μm)的評價基板上。關於安裝條件,首先,於120℃、1秒、0.3MPa的條件下壓接帶有第一膜狀接著劑的第一半導體元件,並以自其上埋入第一半導體元件的方式,於120℃、1.5秒、0.2MPa的條件下壓接帶有第二膜狀接著劑的第二半導體元件。此時,以第一半導體元件位於第二半導體元件的正中間的方式進行對位。藉此而獲得評價樣品。 The obtained first semiconductor element with the first film adhesive and The second semiconductor element with the second film-like adhesive was mounted on a film coated with AUS308 (Sun Holdings Co., Ltd.) manufactured by the company, with a thickness of 260 μm) on the evaluation substrate. Regarding the mounting conditions, first, the first semiconductor element with the first film adhesive was press-bonded under the conditions of 120° C., 1 second, and 0.3 MPa, and the first semiconductor element was embedded thereon at 120° C. The second semiconductor element with the second film-like adhesive was press-bonded under the conditions of °C, 1.5 seconds, and 0.2 MPa. At this time, the alignment is performed so that the first semiconductor element is positioned at the center of the second semiconductor element. Thereby, an evaluation sample was obtained.
[滲出量的評價] [Evaluation of oozing amount]
對於藉由所述方法而獲得的評價樣品,使用顯微鏡(基恩士(KEYENCE)股份有限公司製造,商品名:VHX-5000)來觀察第二半導體元件的上表面。以第二半導體元件的端部為起點,測定第二膜狀接著劑的自端部的露出寬度,藉此而求出滲出量(μm)。此時,將露出寬度的最大值設為滲出量。將結果示於表1及表2中。 About the evaluation sample obtained by the said method, the upper surface of the 2nd semiconductor element was observed using the microscope (Keyence Corporation make, trade name: VHX-5000). From the end of the second semiconductor element as a starting point, the exposure width of the second film-like adhesive from the end was measured to obtain the amount of bleeding (μm). At this time, the maximum value of the exposed width was defined as the amount of bleeding. The results are shown in Tables 1 and 2.
[埋入性的評價] [Evaluation of Implantability]
(硬化前埋入性) (Embeddability before hardening)
對於藉由以上方法而獲得的評價樣品,對樣品整體使用超音波數位圖像診斷裝置(因賽特(Insight)股份有限公司製造,商品名:IS-350),以75MHz、反射模式進行觀察。根據第二膜狀接著劑的層內部是否確認到空隙來評價硬化前的埋入性。藉由以下 基準來評價埋入性。將結果示於表1及表2中。另外,圖13中示出觀察使用實施例4、比較例1及比較例5的膜狀接著劑的評價樣品中的空隙(孔隙)的產生狀態而得的超音波診斷圖像。 The evaluation sample obtained by the above method was observed at 75 MHz and reflection mode using an ultrasonic digital image diagnostic apparatus (manufactured by Insight Co., Ltd., trade name: IS-350) for the entire sample. The embedding property before hardening was evaluated based on whether or not voids were confirmed inside the layer of the second film-like adhesive. by the following Benchmark to evaluate embedment. The results are shown in Tables 1 and 2. 13 shows ultrasonic diagnostic images obtained by observing the generation state of voids (voids) in the evaluation samples using the film-like adhesives of Example 4, Comparative Example 1, and Comparative Example 5.
◎:未確認到空隙(孔隙)。 ⊚: No voids (voids) were recognized.
○:相對於自安裝後的第二膜狀接著劑的面積去除第一半導體晶片的面積而得的面積,空隙(孔隙)的面積比例小於5%。 ○: The area ratio of voids (voids) is less than 5% with respect to the area obtained by excluding the area of the first semiconductor wafer from the area of the second film-like adhesive after mounting.
△:相對於自安裝後的第二膜狀接著劑的面積去除第一半導體晶片的面積而得的面積,空隙(孔隙)的面積比例為5%以上且小於10%。 Δ: The area ratio of voids (voids) is 5% or more and less than 10% with respect to the area obtained by excluding the area of the first semiconductor wafer from the area of the second film-like adhesive after mounting.
×:相對於自安裝後的第二膜狀接著劑的面積去除第一半導體晶片的面積而得的面積,空隙(孔隙)的面積比例為10%以上。 ×: The area ratio of voids (voids) is 10% or more with respect to the area obtained by excluding the area of the first semiconductor wafer from the area of the second film-like adhesive after mounting.
(硬化後埋入性) (Embeddability after hardening)
於硬化前埋入性的評價之後,將評價樣品投入加壓烘箱中,以140℃、0.6MPa加熱處理45分鐘,使第二膜狀接著劑硬化。硬化後,藉由與所述硬化前埋入性相同的方法來評價硬化後埋入性。將結果示於表1及表2中。 After the evaluation of the embeddability before curing, the evaluation sample was put into a pressurized oven, and heat-treated at 140° C. and 0.6 MPa for 45 minutes to cure the second film-like adhesive. After curing, the embeddability after curing was evaluated by the same method as the embeddability before curing. The results are shown in Tables 1 and 2.
如根據表1及表2所示的結果可知般,實施例1~實施 例4均為,於硬化前埋入性的評價中孔隙的比例為5%以下,且於加壓烘箱硬化後的埋入性的評價中未確認到孔隙,進而滲出量為70μm以下。另一方面,比較例1中,於硬化前埋入性的評價中孔隙的比例為5%以上且小於10%,且與實施例相比,滲出量大致多2倍量。另外,比較例2~比較例4中,滲出量均為80μm以上。另外,比較例5~比較例8中,於硬化前埋入性的評價中孔隙的比例為10%以上,且於加壓烘箱硬化後孔隙亦未消失。 As can be seen from the results shown in Tables 1 and 2, Examples 1 to Implementation In Example 4, the ratio of voids was 5% or less in the evaluation of embeddability before curing, and no voids were recognized in the evaluation of embeddability after pressure oven curing, and the amount of exudation was 70 μm or less. On the other hand, in Comparative Example 1, the ratio of voids in the evaluation of the embeddability before hardening was 5% or more and less than 10%, and the amount of exudation was approximately 2 times larger than that of the Examples. In addition, in Comparative Example 2 to Comparative Example 4, the amount of exudation was 80 μm or more. In addition, in Comparative Examples 5 to 8, the ratio of voids in the evaluation of embeddability before curing was 10% or more, and voids did not disappear even after curing in a pressurized oven.
10:膜狀接著劑 10: Film adhesive
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